JP5617525B2 - LIGHTING DEVICE AND ELECTRONIC DEVICE - Google Patents

LIGHTING DEVICE AND ELECTRONIC DEVICE Download PDF

Info

Publication number
JP5617525B2
JP5617525B2 JP2010238255A JP2010238255A JP5617525B2 JP 5617525 B2 JP5617525 B2 JP 5617525B2 JP 2010238255 A JP2010238255 A JP 2010238255A JP 2010238255 A JP2010238255 A JP 2010238255A JP 5617525 B2 JP5617525 B2 JP 5617525B2
Authority
JP
Japan
Prior art keywords
light emission
transistor
resistance value
value change
emission control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010238255A
Other languages
Japanese (ja)
Other versions
JP2012094576A (en
Inventor
隆史 戸谷
隆史 戸谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2010238255A priority Critical patent/JP5617525B2/en
Publication of JP2012094576A publication Critical patent/JP2012094576A/en
Application granted granted Critical
Publication of JP5617525B2 publication Critical patent/JP5617525B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source

Landscapes

  • Electroluminescent Light Sources (AREA)

Description

本発明は、照明装置およびそれを備えた電子機器に関するものである。   The present invention relates to a lighting device and an electronic apparatus including the same.

近年、有機エレクトロルミネッセンス素子（以下、ＥＬ素子）は、軽く、薄くかつ低消費電力という特性を有するので、平面表示装置だけでなく、近年、面発光型の照明装置（以下、面発光装置）へも応用されている。
しかしながら、ＥＬ素子を用いた面発光装置は、一般的な照明装置に比べて、輝度寿命にまだ課題があり、明るさの低下が早い。 In recent years, organic electroluminescence elements (hereinafter referred to as EL elements) are light, thin, and have low power consumption, so that not only flat display devices but also surface-emitting type illumination devices (hereinafter referred to as surface light-emitting devices) in recent years. Has also been applied.
However, a surface light-emitting device using an EL element still has a problem in luminance life and brightness is rapidly reduced as compared with a general lighting device.

製品として面発光装置を考えた場合、長期の使用となるので、光源の交換をどの時点で行うかが問題となる。一般的な照明装置の場合には、全く発光しなくなる時点ではなく、感覚的に暗くなった時点で、光源を交換する。   When a surface emitting device is considered as a product, it will be used for a long time, so it becomes a problem at which point the light source should be replaced. In the case of a general lighting device, the light source is replaced when it becomes sensuously dark, not when no light is emitted.

特許文献１には、照明装置の光源の交換時期を知らせる方法が開示されている。特許文献１に記載の照明装置の光源の交換時期を知らせる方法は、有機ＥＬ素子が形成されている基板上に、抵抗値変化検出手段を設けて輝度寿命判定を行うことを特徴としている。抵抗値変化検出手段は、有機ＥＬ素子を並列に配置して、一方の有機ＥＬ素子の陽極に抵抗を設ける構成としている。即ち、２つの有機ＥＬ素子に異なる電流値を設定し、有機ＥＬ素子の劣化による抵抗値変化を検出している。ただし、抵抗値変化検出手段は、抵抗素子のみで電流値を設定しているため、輝度寿命判定結果のばらつきや誤認識し易いという課題がある。   Patent Document 1 discloses a method for notifying the replacement timing of the light source of the lighting device. The method of notifying the replacement time of the light source of the illumination device described in Patent Document 1 is characterized in that a resistance value change detecting means is provided on a substrate on which an organic EL element is formed to perform luminance life determination. The resistance value change detecting means has a configuration in which organic EL elements are arranged in parallel and a resistance is provided on the anode of one of the organic EL elements. That is, different current values are set for the two organic EL elements, and a change in resistance value due to deterioration of the organic EL elements is detected. However, since the resistance value change detection means sets the current value only by the resistance element, there is a problem that variations in luminance life determination results and erroneous recognition are likely to occur.

特開２００９−２７２１５１号公報JP 2009-272151 A

本発明は、上記事情を鑑みてなされたもので、前記抵抗値変化検出手段において、輝度寿命判定結果のばらつきや誤認識を低減することを目的とする。   The present invention has been made in view of the above circumstances, and an object of the present invention is to reduce variations in luminance life determination results and erroneous recognition in the resistance value change detection means.

本発明は、上述の課題の少なくとも一部を解決するためになされたものであり、以下の形態または適用例として実現することが可能である。
本発明の一態様の照明装置は、基板と、前記基板の一方の面に設けられ、第１のＥＬ素子からなる面発光部と、前記基板の一方の面に設けられ、前記面発光部を取り囲む外枠部と、前記外枠部の一部に設けられた抵抗値変化検出手段と、を有し、前記抵抗値変化検出手段は、並列に接続された第２のＥＬ素子及び第３のＥＬ素子と、前記第３のＥＬ素子の陽極に接続されたトランジスターと、前記トランジスターに直列接続された抵抗素子と、を備え、前記抵抗値変化検出手段の前記第２のＥＬ素子及び前記第３のＥＬ素子の発光輝度に基づき、前記面発光部の交換時期を認識させることを特徴とする。 SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.
An illumination device of one embodiment of the present invention includes a substrate, a surface light-emitting portion that is provided on one surface of the substrate, and includes a first EL element, and is provided on one surface of the substrate. And a resistance value change detecting means provided in a part of the outer frame part, wherein the resistance value change detecting means includes a second EL element and a third connected in parallel. An EL element; a transistor connected to the anode of the third EL element; and a resistance element connected in series to the transistor; and the second EL element and the third EL element of the resistance value change detecting means. The replacement time of the surface light emitting unit is recognized based on the light emission luminance of the EL element.

［適用例１］本適用例に係る照明装置は、基板と、前記基板の一方の面に設けられ、ＥＬ素子からなる面発光部と、前記基板の一方の面に設けられ、前記面発光部を取り囲む外枠部と、前記外枠部の一部に、抵抗値変化検出手段と、を有し、
前記抵抗値変化検出手段は、並列に接続された一組の前記ＥＬ素子と、前記一組の前記ＥＬ素子のいずれか一方の陽極に接続されたトランジスターと、前記トランジスターに直列接続された抵抗素子と、を備えることを特徴とする。 Application Example 1 An illumination device according to this application example is provided with a substrate, a surface light-emitting unit provided on one surface of the substrate, which includes an EL element, and a surface light-emitting unit provided on one surface of the substrate. And a resistance value change detecting means in a part of the outer frame part,
The resistance value change detecting means includes a set of the EL elements connected in parallel, a transistor connected to the anode of one of the set of EL elements, and a resistance element connected in series to the transistor And.

本適用例に係る照明装置によれば、基板と、基板の一方の面に設けられ、ＥＬ素子からなる面発光部と、基板の一方の面に設けられ、面発光部を取り囲む外枠部と、外枠部の一部に、抵抗値変化検出手段と、を有し、抵抗値変化検出手段は、並列に接続された一組のＥＬ素子と、一組のＥＬ素子のいずれか一方の陽極に接続されたトランジスターと、トランジスターに直列接続された抵抗素子とで構成されている。これにより、抵抗素子が接続されていないＥＬ素子の有機化合物層（機能層）に印加される電圧（実効電圧）を、抵抗素子が接続されたＥＬ素子の有機化合物層（機能層）に印加される電圧（実効電圧）よりも大きくすることができる。更に、前記トランジスターと抵抗素子を直列接続しているので、前記トランジスターをスイッチング素子として使用し、前記トランジスターのＯＦＦ期間を設けることで、抵抗素子が接続されたＥＬ素子の有機化合物層（機能層）に印加される実効電圧を低減できる。これによって、輝度寿命判定結果のばらつきや誤認識を低減することが可能となる。   According to the illumination device according to this application example, the substrate, the surface light emitting unit provided on one surface of the substrate and made of an EL element, and the outer frame unit provided on one surface of the substrate and surrounding the surface light emitting unit, And a resistance value change detecting means in a part of the outer frame portion, the resistance value change detecting means comprising a set of EL elements connected in parallel and an anode of one of the set of EL elements. And a resistance element connected in series to the transistor. Thereby, the voltage (effective voltage) applied to the organic compound layer (functional layer) of the EL element to which the resistance element is not connected is applied to the organic compound layer (functional layer) of the EL element to which the resistance element is connected. Can be made larger than the voltage (effective voltage). Furthermore, since the transistor and the resistance element are connected in series, the organic compound layer (functional layer) of the EL element to which the resistance element is connected by using the transistor as a switching element and providing an OFF period of the transistor. The effective voltage applied to can be reduced. As a result, it is possible to reduce variations in luminance life determination results and erroneous recognition.

［適用例２］また、本発明は前記照明装置を適用した電子機器を含む。   Application Example 2 The present invention also includes an electronic device to which the lighting device is applied.

本適用例によれば、前記電子機器は前記面発光装置を備えているため、輝度寿命判定結果のばらつきや誤認識を低減することが可能となる。   According to this application example, since the electronic device includes the surface light-emitting device, it is possible to reduce variations in luminance life determination results and erroneous recognition.

本発明の実施形態である照明装置を示す平面図である。It is a top view which shows the illuminating device which is embodiment of this invention. 本発明の実施形態である照明装置の交換時期表示部を示す平面図である。It is a top view which shows the replacement time display part of the illuminating device which is embodiment of this invention. 本発明の実施形態である照明装置の抵抗値変化検出手段を示す等価回路図である。It is an equivalent circuit diagram which shows the resistance value change detection means of the illuminating device which is embodiment of this invention.

以下、本発明を実施するための形態を説明する。なお、以下の全ての図面においては、図面を見やすくするため、各構成要素の膜厚や寸法の比率などは適宜異ならせてある。   Hereinafter, modes for carrying out the present invention will be described. In all the drawings below, the film thicknesses and dimensional ratios of the constituent elements are appropriately changed in order to make the drawings easy to see.

（第１実施形態）
図１は、本発明の実施形態である照明装置としての面発光装置の一例を示す平面図である。
図１に示すように、面発光装置２００は、基板上に、ＥＬ素子からなる面発光部２０１と、面発光部２０１を取り囲む外枠部２０２が備えられ、外枠部２０２の一部に面発光部２０１の交換時期を示す交換時期表示部（抵抗値変化検出手段）２０７が設けられている。 (First embodiment)
FIG. 1 is a plan view showing an example of a surface light-emitting device as an illumination device according to an embodiment of the present invention.
As shown in FIG. 1, a surface light emitting device 200 includes a surface light emitting unit 201 made of an EL element and an outer frame unit 202 surrounding the surface light emitting unit 201 on a substrate. An exchange time display unit (resistance value change detection means) 207 indicating the exchange time of the light emitting unit 201 is provided.

図２は、図１の交換時期表示部（抵抗値変化検出手段）２０７の拡大平面図である。
交換時期表示部（抵抗値変化検出手段）２０７は、並列に接続された一組のＥＬ素子２０３Ａ、２０３Ｂが備えられており、一組のＥＬ素子２０３Ａ、２０３Ｂのいずれか一方の陽極に発光制御用トランジスターと抵抗素子（不図示）が直列接続されている。なお、説明を分かりやすくするために、ここではＥＬ素子２０３Ｂの陽極に発光制御用トランジスターと抵抗素子が直列接続されているものとして、以下の説明を行う。 FIG. 2 is an enlarged plan view of the replacement time display unit (resistance value change detection means) 207 of FIG.
The replacement time display unit (resistance value change detection means) 207 includes a set of EL elements 203A and 203B connected in parallel, and controls light emission to one of the anodes of the set of EL elements 203A and 203B. A transistor and a resistance element (not shown) are connected in series. In order to make the description easy to understand, the following description will be made on the assumption that a light emission controlling transistor and a resistance element are connected in series to the anode of the EL element 203B.

一組のＥＬ素子２０３Ａ、２０３Ｂは並列に接続されており、ＥＬ素子２０３Ｂの陽極には、発光制御用トランジスターと抵抗素子が直列接続されているので、実際にＥＬ素子の有機化合物層（機能層）に印加される電圧（実効電圧）は、陽極に発光制御用トランジスターと抵抗素子が直列接続されているＥＬ素子２０３Ｂよりも陽極に発光制御用トランジスターと抵抗素子が直列接続されていないＥＬ素子２０３Ａの方が大きくなる。これにより、陽極に発光制御用トランジスターと抵抗素子が直列接続されていないＥＬ素子２０３Ａの初期輝度は、陽極に発光制御用トランジスターと抵抗素子が直列接続されているＥＬ素子２０３Ｂの初期輝度よりも大きくなる。   The pair of EL elements 203A and 203B are connected in parallel, and the light emitting control transistor and the resistance element are connected in series to the anode of the EL element 203B. ) Is applied to the EL element 203A in which the light emission control transistor and the resistance element are not connected in series to the anode rather than the EL element 203B in which the light emission control transistor and the resistance element are connected in series to the anode. Is bigger. Accordingly, the initial luminance of the EL element 203A in which the light emission control transistor and the resistance element are not connected in series to the anode is larger than the initial luminance of the EL element 203B in which the light emission control transistor and the resistance element are connected in series to the anode. Become.

また、陽極に発光制御用トランジスターと抵抗素子が直列接続されていないＥＬ素子２０３Ａに印加される電圧（実効電圧）は、陽極に発光制御用トランジスターと抵抗素子が直列接続されているＥＬ素子２０３Ｂに印加される電圧（実効電圧）よりも大きいので、一定時間発光させたときのＥＬ素子の劣化は、陽極に発光制御用トランジスターと抵抗素子が直列接続されていないＥＬ素子２０３Ａの方が、陽極に発光制御用トランジスターと抵抗素子が直列接続されているＥＬ素子２０３Ｂよりも早くなる。   The voltage (effective voltage) applied to the EL element 203A in which the light emission control transistor and the resistance element are not connected in series to the anode is applied to the EL element 203B in which the light emission control transistor and the resistance element are connected in series to the anode. Since the voltage is higher than the applied voltage (effective voltage), the deterioration of the EL element when light is emitted for a certain period of time is that the EL element 203A in which the light emission control transistor and the resistance element are not connected in series to the anode is connected to the anode. This is faster than the EL element 203B in which the light emission control transistor and the resistance element are connected in series.

つまり、陽極に発光制御用トランジスターと抵抗素子が直列接続されていないＥＬ素子２０３Ａの劣化速度の方が、陽極に発光制御用トランジスターと抵抗素子が直列接続されているＥＬ素子２０３Ｂの劣化速度よりも大きく、輝度が初期輝度の半分の値となるまでの期間（半減期）が短くなる。抵抗素子の抵抗値や駆動電圧などの条件を制御することにより、陽極に発光制御用トランジスターと抵抗素子が直列接続されていないＥＬ素子２０３Ａの半減期において、陽極に発光制御用トランジスターと抵抗素子が直列接続されていないＥＬ素子２０３Ａの輝度と、陽極に発光制御用トランジスターと抵抗素子が直列接続されているＥＬ素子２０３Ｂの輝度との大小が切り替わるようにすることができる。   That is, the deterioration rate of the EL element 203A in which the light emission control transistor and the resistance element are not connected in series to the anode is higher than the deterioration speed of the EL element 203B in which the light emission control transistor and the resistance element are connected in series to the anode. The period (half-life) until the luminance becomes half the initial luminance is shortened. By controlling conditions such as the resistance value and driving voltage of the resistance element, the light emission control transistor and the resistance element are connected to the anode in the half life of the EL element 203A in which the light emission control transistor and the resistance element are not connected in series to the anode. The brightness of the EL element 203A not connected in series and the brightness of the EL element 203B in which the light emission control transistor and the resistance element are connected in series to the anode can be switched.

ここで、図３を用いて、交換時期表示部（抵抗値変化検出手段）２０７について詳細に説明する。図３に示すとおり、交換時期表示部（抵抗値変化検出手段）２０７は、複数の走査線１０１と、これら走査線１０１に対して交差する方向に延びる信号線１０２と、これら信号線１０２に並列に延びる共通給電線１０３とが配線されている。走査線１０１及び信号線１０２の交点に発光領域Ｘが設けられている。   Here, the replacement time display unit (resistance value change detection means) 207 will be described in detail with reference to FIG. As shown in FIG. 3, the replacement time display unit (resistance value change detection means) 207 includes a plurality of scanning lines 101, a signal line 102 extending in a direction intersecting with these scanning lines 101, and parallel to these signal lines 102. Is connected to a common power supply line 103 extending in a straight line. A light emitting region X is provided at the intersection of the scanning line 101 and the signal line 102.

信号線１０２に対しては、シフト-レジスター、レベルシフター、ビデオライン、及びアナログスイッチ等を備えるデータ側駆動回路が設けられている。一方、走査線１０１に対しては、シフトレジスター及びレベルシフター等を備える走査側駆動回路が設けられている。
また、発光領域Ｘの各々には、走査線１０１を介して走査信号（電力）がゲート電極に供給されるスイッチング用ＴＦＴ（薄膜トランジスター）１１２と、このスイッチング用ＴＦＴ１１２を介して信号線１０２から供給される画像信号を保持する保持容量１１３と、保持容量１１３によって保持された画像信号がゲート電極に供給される駆動用ＴＦＴ１２３と、駆動用ＴＦＴ１２３のドレイン電極（またはソース電極）と抵抗素子２０５を介してそのソース電極（またはドレイン電極）が接続され、ＥＬ素子２０３Bの発光を制御するための発光制御信号ＲＳＴがゲート電極に供給される発光制御用ＴＦＴ１２４が設けられている。 For the signal line 102, a data side driving circuit including a shift register, a level shifter, a video line, an analog switch, and the like is provided. On the other hand, for the scanning line 101, a scanning side driving circuit including a shift register, a level shifter, and the like is provided.
Further, a switching TFT (thin film transistor) 112 to which a scanning signal (power) is supplied to the gate electrode through the scanning line 101 and a signal line 102 through the switching TFT 112 are supplied to each light emitting region X. Through the storage capacitor 113 for holding the image signal to be output, the driving TFT 123 to which the image signal held by the storage capacitor 113 is supplied to the gate electrode, the drain electrode (or source electrode) of the driving TFT 123 and the resistance element 205. A light emission control TFT 124 to which a light emission control signal RST for controlling light emission of the EL element 203B is supplied to the gate electrode is provided.

このような構成のもとに、走査線１０１が駆動されてスイッチング用ＴＦＴ１１２がオンとなると、そのときの信号線１０２の電位（電力）が保持容量１１３に保持され、該保持容量１１３の状態に応じて、駆動用ＴＦＴ１２３のオン・オフ状態が決まる。そして、駆動用ＴＦＴ１２３のチャネルを介して共通給電線１０３から画素電極（陽極）１０に電流（電力）が流れ、ＥＬ素子２０３Ａ、２０３Ｂの図示しない有機化合物層（機能層）を通じて陰極５０（図２参照）に電流が流れることにより、有機化合物層（機能層）中の発光層は、これを流れる電流量に応じて発光する。   Under such a configuration, when the scanning line 101 is driven and the switching TFT 112 is turned on, the potential (power) of the signal line 102 at that time is held in the holding capacitor 113, and the state of the holding capacitor 113 is reached. Accordingly, the on / off state of the driving TFT 123 is determined. Then, current (power) flows from the common power supply line 103 to the pixel electrode (anode) 10 through the channel of the driving TFT 123, and the cathode 50 (FIG. 2) passes through the organic compound layer (functional layer) (not shown) of the EL elements 203A and 203B. When a current flows through (see), the light emitting layer in the organic compound layer (functional layer) emits light in accordance with the amount of current flowing therethrough.

ＥＬ素子２０３Ａでは、駆動用ＴＦＴ１２３を介して共通給電線１０３に電気的に接続したときに、共通給電線１０３から画素電極（陽極）１０へ駆動電流が流れ込む。しかし、ＥＬ素子２０３Ｂでは、画素電極（陽極）１０と駆動用ＴＦＴ１２３との間に抵抗素子２０５および発光制御用ＴＦＴ１２４が直列接続されているので、駆動用ＴＦＴ１２３を介して共通給電線１０３に電気的に接続したときに共通給電線１０３から抵抗素子２０５および発光制御用ＴＦＴ１２４を介して画素電極（陽極）１０へ駆動電流が流れ込む。   In the EL element 203 </ b> A, when electrically connected to the common power supply line 103 via the driving TFT 123, a drive current flows from the common power supply line 103 to the pixel electrode (anode) 10. However, in the EL element 203B, since the resistance element 205 and the light emission control TFT 124 are connected in series between the pixel electrode (anode) 10 and the driving TFT 123, the common power supply line 103 is electrically connected via the driving TFT 123. , A drive current flows from the common power supply line 103 to the pixel electrode (anode) 10 via the resistance element 205 and the light emission control TFT 124.

次に発光制御用ＴＦＴ１２４の動作について説明する。発光制御用ＴＦＴ１２４は発光制御信号線１０４から供給される発光制御信号によってＯＮ／ＯＦＦ制御されるＮチャネル型トランジスターとする。発光制御用ＴＦＴ１２４は、発光制御信号がＨｉｇｈレベルのときＯＮ状態となり、抵抗素子２０５を設けた方のＥＬ素子２０３Ｂが発光する。（この時、抵抗素子２０５が接続されていないＥＬ素子２０３Ａも発光している）また、発光制御信号がＬＯＷレベルのときは、発光制御用ＴＦＴ１２４はＯＦＦ状態となり、抵抗素子２０５を設けた方のＥＬ素子２０３Ｂは消灯状態となる。ここで、本実施形態では、発光制御用ＴＦＴ１２４はＮチャネル型トランジスターとした例を示したが、これに限ったものではなく、発光制御用ＴＦＴ１２４をPチャネル型トランジスターとしても良い。   Next, the operation of the light emission control TFT 124 will be described. The light emission control TFT 124 is an N-channel transistor that is ON / OFF controlled by a light emission control signal supplied from the light emission control signal line 104. The light emission control TFT 124 is turned on when the light emission control signal is at a high level, and the EL element 203B provided with the resistance element 205 emits light. (At this time, the EL element 203A to which the resistance element 205 is not connected is also emitting light.) When the light emission control signal is at the LOW level, the light emission control TFT 124 is turned off and the resistance element 205 is provided. The EL element 203B is turned off. In this embodiment, the light emission control TFT 124 is an N-channel transistor. However, the present invention is not limited to this, and the light emission control TFT 124 may be a P-channel transistor.

更に、発光制御信号の信号タイミングについて説明する。発光制御信号は抵抗素子２０５が接続されていないＥＬ素子２０３Ａの発光期間よりも、抵抗が接続されているＥＬ素子２０３Ｂの発光期間が短くなるようにＯＮ／ＯＦＦ制御される。ＯＮ／ＯＦＦ期間は、任意に設定可能である。例えば、1走査線選択期間である１Ｈ期間、1フレーム走査期間である１Ｖ期間、ｎフレーム期間など）   Further, the signal timing of the light emission control signal will be described. The light emission control signal is ON / OFF controlled so that the light emission period of the EL element 203B to which the resistor is connected is shorter than the light emission period of the EL element 203A to which the resistance element 205 is not connected. The ON / OFF period can be set arbitrarily. (For example, 1H period which is one scanning line selection period, 1V period which is 1 frame scanning period, n frame period, etc.)

ここで、面発光部２０１のＥＬ素子と前記ＥＬ素子２０３ＡおよびＥＬ素子２０３Ｂの駆動タイミングは、面発光部２０１のＥＬ素子の発光に連動して、交換時期表示部（抵抗値変化検出手段）２０７に備えられた一組のＥＬ素子２０３Ａ、２０３Ｂが発光される構成とされていることが好ましい。これにより、抵抗素子の抵抗値や駆動電圧などの条件を制御することにより、抵抗素子が接続されていないＥＬ素子２０３Ａの半減期において、面発光部２０１のＥＬ素子の輝度が初期輝度の半分の値となるようにすることができる。   Here, the drive timings of the EL elements of the surface light emitting unit 201 and the EL elements 203A and 203B are linked with the light emission of the EL elements of the surface light emitting unit 201, and the replacement time display unit (resistance value change detecting means) 207. It is preferable that the pair of EL elements 203A and 203B provided in the device emit light. Thereby, by controlling conditions such as the resistance value and driving voltage of the resistance element, the luminance of the EL element of the surface light emitting unit 201 is half of the initial luminance in the half life of the EL element 203A to which the resistance element is not connected. Can be a value.

交換時期表示部（抵抗値変化検出手段）２０７の一組のＥＬ素子２０３Ａ、２０３Ｂは、面発光部２０１のＥＬ素子と異なる材料および構造としてもよいが、交換時期表示部（抵抗値変化検出手段）２０７の一組のＥＬ素子２０３Ａ、２０３Ｂは、面発光部２０１のＥＬ素子と同様の材料および構造としてもよい。   The pair of EL elements 203A and 203B of the replacement time display unit (resistance value change detection means) 207 may have a material and a structure different from those of the EL elements of the surface light emitting unit 201, but the replacement time display unit (resistance value change detection means). ) The set of EL elements 203A and 203B 207 may have the same material and structure as the EL elements of the surface light emitting portion 201.

これにより、面発光部２０１のＥＬ素子と同条件で、交換時期表示部（抵抗値変化検出手段）２０７の一組のＥＬ素子２０３Ａ、２０３Ｂを駆動させることで、交換時期表示部（抵抗値変化検出手段）２０７に備えられたＥＬ素子の発光輝度の切り替わり時点が、面発光部２０１のＥＬ素子の半減期とすることができ、面発光部の交換時期を認識することができる。   Thus, by driving the set of EL elements 203A and 203B of the replacement time display unit (resistance value change detecting means) 207 under the same conditions as the EL elements of the surface light emitting unit 201, the replacement time display unit (resistance value change) The switching point of the light emission luminance of the EL element provided in the detection means 207 can be the half life of the EL element of the surface light emitting unit 201, and the replacement time of the surface light emitting unit can be recognized.

本実施形態によると、抵抗素子が接続されていないＥＬ素子の有機化合物層（機能層）に印加される電圧（実効電圧）を、抵抗素子が接続されたＥＬ素子の有機化合物層（機能層）に印加される電圧（実効電圧）よりも大きくすることができる。更に、前記トランジスターと抵抗素子を直列接続しているので、前記トランジスターをスイッチング素子として使用し、前記トランジスターのＯＦＦ期間を設けることで、抵抗素子が接続されたＥＬ素子の有機化合物層（機能層）に印加される実効電圧を低減できる。これによって、輝度寿命判定結果のばらつきや誤認識を低減することが可能となる。   According to this embodiment, the voltage (effective voltage) applied to the organic compound layer (functional layer) of the EL element to which the resistance element is not connected is changed to the organic compound layer (functional layer) of the EL element to which the resistance element is connected. Can be made larger than the voltage (effective voltage) applied to. Furthermore, since the transistor and the resistance element are connected in series, the organic compound layer (functional layer) of the EL element to which the resistance element is connected by using the transistor as a switching element and providing an OFF period of the transistor. The effective voltage applied to can be reduced. As a result, it is possible to reduce variations in luminance life determination results and erroneous recognition.

１０・・・画素電極（陽極）、５０・・・共通電極（陰極）、１０１・・・走査線、１０２・・・信号線、１０３・・・共通給電線、１０４・・・発光制御信号線、１１２・・・スイッチング用ＴＦＴ（薄膜トランジスター）、１１３・・・保持容量、１２３・・・駆動用ＴＦＴ（薄膜トランジスター）、１２４・・・発光制御用ＴＦＴ（薄膜トランジスター）、２００・・・面発光装置、２０１・・・面発光部、２０２・・・外枠部、２０３Ａ、２０３Ｂ・・・ＥＬ素子、２０５・・・抵抗素子、２０７・・・交換時期表示部（抵抗値変化検出手段）、Ｘ・・・発光領域。   DESCRIPTION OF SYMBOLS 10 ... Pixel electrode (anode), 50 ... Common electrode (cathode), 101 ... Scanning line, 102 ... Signal line, 103 ... Common feed line, 104 ... Light emission control signal line , 112... Switching TFT (thin film transistor), 113... Holding capacitor, 123... Driving TFT (thin film transistor), 124. Light emitting device, 201... Surface light emitting section, 202... Outer frame section, 203 A, 203 B... EL element, 205. , X ... light emitting region.

Claims (2)

基板と、
前記基板の一方の面に設けられ、第１のＥＬ素子からなる面発光部と、
前記基板の一方の面に設けられ、前記面発光部を取り囲む外枠部と、
前記外枠部の一部に設けられた抵抗値変化検出手段と、を有し、
前記抵抗値変化検出手段は、並列に接続された第２のＥＬ素子及び第３のＥＬ素子と、前記第３のＥＬ素子の陽極に接続されたトランジスターと、前記トランジスターに直列接続された抵抗素子と、
を備え、
前記抵抗値変化検出手段の前記第２のＥＬ素子及び前記第３のＥＬ素子の発光輝度に基づき、前記面発光部の交換時期を認識させることを特徴とする照明装置。 A substrate,
A surface light emitting portion provided on one surface of the substrate and made of a first EL element;
An outer frame portion provided on one surface of the substrate and surrounding the surface light emitting portion;
A resistance value change detecting means provided in a part of the outer frame portion,
The resistance value change detecting means includes a second EL element and a third EL element connected in parallel, a transistor connected to an anode of the third EL element , and a resistance element connected in series to the transistor When,
Equipped with a,
An illuminating apparatus characterized in that the replacement timing of the surface light emitting unit is recognized based on the light emission luminance of the second EL element and the third EL element of the resistance value change detecting means . 請求項１に記載の照明装置を備えたことを特徴とする電子機器。   An electronic apparatus comprising the lighting device according to claim 1.
JP2010238255A 2010-10-25 2010-10-25 LIGHTING DEVICE AND ELECTRONIC DEVICE Expired - Fee Related JP5617525B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010238255A JP5617525B2 (en) 2010-10-25 2010-10-25 LIGHTING DEVICE AND ELECTRONIC DEVICE

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010238255A JP5617525B2 (en) 2010-10-25 2010-10-25 LIGHTING DEVICE AND ELECTRONIC DEVICE

Publications (2)

Publication Number Publication Date
JP2012094576A JP2012094576A (en) 2012-05-17
JP5617525B2 true JP5617525B2 (en) 2014-11-05

Family

ID=46387618

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010238255A Expired - Fee Related JP5617525B2 (en) 2010-10-25 2010-10-25 LIGHTING DEVICE AND ELECTRONIC DEVICE

Country Status (1)

Country Link
JP (1) JP5617525B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10512426B2 (en) 2016-08-24 2019-12-24 Seiko Epson Corporation Biological information acquisition device and biological information acquisition method

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6091166B2 (en) * 2012-11-08 2017-03-08 株式会社カネカ Organic EL device
DE102015110071B4 (en) * 2015-06-23 2023-09-07 Pictiva Displays International Limited Organic light emitting diode and operating method for an organic light emitting diode

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4999446B2 (en) * 2005-12-27 2012-08-15 株式会社半導体エネルギー研究所 Light emitting device
JP2007257943A (en) * 2006-03-22 2007-10-04 Hioki Ee Corp Sealed light emitting device
JP2008262176A (en) * 2007-03-16 2008-10-30 Hitachi Displays Ltd Organic el display device
JP5018211B2 (en) * 2007-04-26 2012-09-05 コニカミノルタホールディングス株式会社 Organic electroluminescence panel and lighting device using the same
JP2009272151A (en) * 2008-05-08 2009-11-19 Seiko Epson Corp Surface light-emitting device, method of driving the same, and electronic apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10512426B2 (en) 2016-08-24 2019-12-24 Seiko Epson Corporation Biological information acquisition device and biological information acquisition method

Also Published As

Publication number Publication date
JP2012094576A (en) 2012-05-17

Similar Documents

Publication Publication Date Title
JP3670941B2 (en) Active matrix self-luminous display device and active matrix organic EL display device
US20080218499A1 (en) Display device
JP4811849B2 (en) Driving device and driving method of light emitting display panel
WO2015007027A1 (en) Pixel circuit and drive method therefor, array substrate and display device
TW201503084A (en) Pixel of organic light emitting display device
TWI512699B (en) Pixel circuit, and display apparatus and method of driving display apparatus using the pixel circuit
JP2009169239A (en) Self-luminous type display, and driving method therefor
US9275573B2 (en) Display apparatus
WO2014205888A1 (en) Pixel circuit, pixel circuit drive method, display panel, display device, and electronic product
JP2006220851A (en) Driving mechanism of light emitting display panel and driving method
JP2009092964A (en) Pixel circuit
JP2010541012A (en) Dynamic adaptation of power supply voltage for current driven EL display
JP2006276718A5 (en)
JP5617525B2 (en) LIGHTING DEVICE AND ELECTRONIC DEVICE
US10522088B2 (en) Signal processing circuit, display device, and recording medium
JP4805038B2 (en) Electroluminescent display device
JP2006276097A (en) Apparatus and method for driving active matrix type light-emitting display panel
JP5192208B2 (en) Image display device
JP5789585B2 (en) Display device and electronic device
JP2008009280A (en) Display device of active matrix type
JP2006276098A (en) Apparatus and method for driving light-emitting display panel
JP2008009280A5 (en)
JP2008304573A (en) Display device
TWI476747B (en) Balancing common mode voltage in a current driven display
JP5219392B2 (en) Display device and display device drive circuit

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130716

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140131

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140527

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140725

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140819

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140901

R150 Certificate of patent or registration of utility model

Ref document number: 5617525

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees