JP5617525B2 - LIGHTING DEVICE AND ELECTRONIC DEVICE - Google Patents

LIGHTING DEVICE AND ELECTRONIC DEVICE Download PDF

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JP5617525B2
JP5617525B2 JP2010238255A JP2010238255A JP5617525B2 JP 5617525 B2 JP5617525 B2 JP 5617525B2 JP 2010238255 A JP2010238255 A JP 2010238255A JP 2010238255 A JP2010238255 A JP 2010238255A JP 5617525 B2 JP5617525 B2 JP 5617525B2
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light emission
transistor
resistance value
value change
emission control
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JP2012094576A (en
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隆史 戸谷
隆史 戸谷
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Seiko Epson Corp
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source

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Description

本発明は、照明装置およびそれを備えた電子機器に関するものである。   The present invention relates to a lighting device and an electronic apparatus including the same.

近年、有機エレクトロルミネッセンス素子(以下、EL素子)は、軽く、薄くかつ低消費電力という特性を有するので、平面表示装置だけでなく、近年、面発光型の照明装置(以下、面発光装置)へも応用されている。
しかしながら、EL素子を用いた面発光装置は、一般的な照明装置に比べて、輝度寿命にまだ課題があり、明るさの低下が早い。
In recent years, organic electroluminescence elements (hereinafter referred to as EL elements) are light, thin, and have low power consumption, so that not only flat display devices but also surface-emitting type illumination devices (hereinafter referred to as surface light-emitting devices) in recent years. Has also been applied.
However, a surface light-emitting device using an EL element still has a problem in luminance life and brightness is rapidly reduced as compared with a general lighting device.

製品として面発光装置を考えた場合、長期の使用となるので、光源の交換をどの時点で行うかが問題となる。一般的な照明装置の場合には、全く発光しなくなる時点ではなく、感覚的に暗くなった時点で、光源を交換する。   When a surface emitting device is considered as a product, it will be used for a long time, so it becomes a problem at which point the light source should be replaced. In the case of a general lighting device, the light source is replaced when it becomes sensuously dark, not when no light is emitted.

特許文献1には、照明装置の光源の交換時期を知らせる方法が開示されている。特許文献1に記載の照明装置の光源の交換時期を知らせる方法は、有機EL素子が形成されている基板上に、抵抗値変化検出手段を設けて輝度寿命判定を行うことを特徴としている。抵抗値変化検出手段は、有機EL素子を並列に配置して、一方の有機EL素子の陽極に抵抗を設ける構成としている。即ち、2つの有機EL素子に異なる電流値を設定し、有機EL素子の劣化による抵抗値変化を検出している。ただし、抵抗値変化検出手段は、抵抗素子のみで電流値を設定しているため、輝度寿命判定結果のばらつきや誤認識し易いという課題がある。   Patent Document 1 discloses a method for notifying the replacement timing of the light source of the lighting device. The method of notifying the replacement time of the light source of the illumination device described in Patent Document 1 is characterized in that a resistance value change detecting means is provided on a substrate on which an organic EL element is formed to perform luminance life determination. The resistance value change detecting means has a configuration in which organic EL elements are arranged in parallel and a resistance is provided on the anode of one of the organic EL elements. That is, different current values are set for the two organic EL elements, and a change in resistance value due to deterioration of the organic EL elements is detected. However, since the resistance value change detection means sets the current value only by the resistance element, there is a problem that variations in luminance life determination results and erroneous recognition are likely to occur.

特開2009−272151号公報JP 2009-272151 A

本発明は、上記事情を鑑みてなされたもので、前記抵抗値変化検出手段において、輝度寿命判定結果のばらつきや誤認識を低減することを目的とする。   The present invention has been made in view of the above circumstances, and an object of the present invention is to reduce variations in luminance life determination results and erroneous recognition in the resistance value change detection means.

本発明は、上述の課題の少なくとも一部を解決するためになされたものであり、以下の形態または適用例として実現することが可能である。
本発明の一態様の照明装置は、基板と、前記基板の一方の面に設けられ、第1のEL素子からなる面発光部と、前記基板の一方の面に設けられ、前記面発光部を取り囲む外枠部と、前記外枠部の一部に設けられた抵抗値変化検出手段と、を有し、前記抵抗値変化検出手段は、並列に接続された第2のEL素子及び第3のEL素子と、前記第3のEL素子の陽極に接続されたトランジスターと、前記トランジスターに直列接続された抵抗素子と、を備え、前記抵抗値変化検出手段の前記第2のEL素子及び前記第3のEL素子の発光輝度に基づき、前記面発光部の交換時期を認識させることを特徴とする。
SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.
An illumination device of one embodiment of the present invention includes a substrate, a surface light-emitting portion that is provided on one surface of the substrate, and includes a first EL element, and is provided on one surface of the substrate. And a resistance value change detecting means provided in a part of the outer frame part, wherein the resistance value change detecting means includes a second EL element and a third connected in parallel. An EL element; a transistor connected to the anode of the third EL element; and a resistance element connected in series to the transistor; and the second EL element and the third EL element of the resistance value change detecting means. The replacement time of the surface light emitting unit is recognized based on the light emission luminance of the EL element.

[適用例1]本適用例に係る照明装置は、基板と、前記基板の一方の面に設けられ、EL素子からなる面発光部と、前記基板の一方の面に設けられ、前記面発光部を取り囲む外枠部と、前記外枠部の一部に、抵抗値変化検出手段と、を有し、
前記抵抗値変化検出手段は、並列に接続された一組の前記EL素子と、前記一組の前記EL素子のいずれか一方の陽極に接続されたトランジスターと、前記トランジスターに直列接続された抵抗素子と、を備えることを特徴とする。
Application Example 1 An illumination device according to this application example is provided with a substrate, a surface light-emitting unit provided on one surface of the substrate, which includes an EL element, and a surface light-emitting unit provided on one surface of the substrate. And a resistance value change detecting means in a part of the outer frame part,
The resistance value change detecting means includes a set of the EL elements connected in parallel, a transistor connected to the anode of one of the set of EL elements, and a resistance element connected in series to the transistor And.

本適用例に係る照明装置によれば、基板と、基板の一方の面に設けられ、EL素子からなる面発光部と、基板の一方の面に設けられ、面発光部を取り囲む外枠部と、外枠部の一部に、抵抗値変化検出手段と、を有し、抵抗値変化検出手段は、並列に接続された一組のEL素子と、一組のEL素子のいずれか一方の陽極に接続されたトランジスターと、トランジスターに直列接続された抵抗素子とで構成されている。これにより、抵抗素子が接続されていないEL素子の有機化合物層(機能層)に印加される電圧(実効電圧)を、抵抗素子が接続されたEL素子の有機化合物層(機能層)に印加される電圧(実効電圧)よりも大きくすることができる。更に、前記トランジスターと抵抗素子を直列接続しているので、前記トランジスターをスイッチング素子として使用し、前記トランジスターのOFF期間を設けることで、抵抗素子が接続されたEL素子の有機化合物層(機能層)に印加される実効電圧を低減できる。これによって、輝度寿命判定結果のばらつきや誤認識を低減することが可能となる。   According to the illumination device according to this application example, the substrate, the surface light emitting unit provided on one surface of the substrate and made of an EL element, and the outer frame unit provided on one surface of the substrate and surrounding the surface light emitting unit, And a resistance value change detecting means in a part of the outer frame portion, the resistance value change detecting means comprising a set of EL elements connected in parallel and an anode of one of the set of EL elements. And a resistance element connected in series to the transistor. Thereby, the voltage (effective voltage) applied to the organic compound layer (functional layer) of the EL element to which the resistance element is not connected is applied to the organic compound layer (functional layer) of the EL element to which the resistance element is connected. Can be made larger than the voltage (effective voltage). Furthermore, since the transistor and the resistance element are connected in series, the organic compound layer (functional layer) of the EL element to which the resistance element is connected by using the transistor as a switching element and providing an OFF period of the transistor. The effective voltage applied to can be reduced. As a result, it is possible to reduce variations in luminance life determination results and erroneous recognition.

[適用例2]また、本発明は前記照明装置を適用した電子機器を含む。   Application Example 2 The present invention also includes an electronic device to which the lighting device is applied.

本適用例によれば、前記電子機器は前記面発光装置を備えているため、輝度寿命判定結果のばらつきや誤認識を低減することが可能となる。   According to this application example, since the electronic device includes the surface light-emitting device, it is possible to reduce variations in luminance life determination results and erroneous recognition.

本発明の実施形態である照明装置を示す平面図である。It is a top view which shows the illuminating device which is embodiment of this invention. 本発明の実施形態である照明装置の交換時期表示部を示す平面図である。It is a top view which shows the replacement time display part of the illuminating device which is embodiment of this invention. 本発明の実施形態である照明装置の抵抗値変化検出手段を示す等価回路図である。It is an equivalent circuit diagram which shows the resistance value change detection means of the illuminating device which is embodiment of this invention.

以下、本発明を実施するための形態を説明する。なお、以下の全ての図面においては、図面を見やすくするため、各構成要素の膜厚や寸法の比率などは適宜異ならせてある。   Hereinafter, modes for carrying out the present invention will be described. In all the drawings below, the film thicknesses and dimensional ratios of the constituent elements are appropriately changed in order to make the drawings easy to see.

(第1実施形態)
図1は、本発明の実施形態である照明装置としての面発光装置の一例を示す平面図である。
図1に示すように、面発光装置200は、基板上に、EL素子からなる面発光部201と、面発光部201を取り囲む外枠部202が備えられ、外枠部202の一部に面発光部201の交換時期を示す交換時期表示部(抵抗値変化検出手段)207が設けられている。
(First embodiment)
FIG. 1 is a plan view showing an example of a surface light-emitting device as an illumination device according to an embodiment of the present invention.
As shown in FIG. 1, a surface light emitting device 200 includes a surface light emitting unit 201 made of an EL element and an outer frame unit 202 surrounding the surface light emitting unit 201 on a substrate. An exchange time display unit (resistance value change detection means) 207 indicating the exchange time of the light emitting unit 201 is provided.

図2は、図1の交換時期表示部(抵抗値変化検出手段)207の拡大平面図である。
交換時期表示部(抵抗値変化検出手段)207は、並列に接続された一組のEL素子203A、203Bが備えられており、一組のEL素子203A、203Bのいずれか一方の陽極に発光制御用トランジスターと抵抗素子(不図示)が直列接続されている。なお、説明を分かりやすくするために、ここではEL素子203Bの陽極に発光制御用トランジスターと抵抗素子が直列接続されているものとして、以下の説明を行う。
FIG. 2 is an enlarged plan view of the replacement time display unit (resistance value change detection means) 207 of FIG.
The replacement time display unit (resistance value change detection means) 207 includes a set of EL elements 203A and 203B connected in parallel, and controls light emission to one of the anodes of the set of EL elements 203A and 203B. A transistor and a resistance element (not shown) are connected in series. In order to make the description easy to understand, the following description will be made on the assumption that a light emission controlling transistor and a resistance element are connected in series to the anode of the EL element 203B.

一組のEL素子203A、203Bは並列に接続されており、EL素子203Bの陽極には、発光制御用トランジスターと抵抗素子が直列接続されているので、実際にEL素子の有機化合物層(機能層)に印加される電圧(実効電圧)は、陽極に発光制御用トランジスターと抵抗素子が直列接続されているEL素子203Bよりも陽極に発光制御用トランジスターと抵抗素子が直列接続されていないEL素子203Aの方が大きくなる。これにより、陽極に発光制御用トランジスターと抵抗素子が直列接続されていないEL素子203Aの初期輝度は、陽極に発光制御用トランジスターと抵抗素子が直列接続されているEL素子203Bの初期輝度よりも大きくなる。   The pair of EL elements 203A and 203B are connected in parallel, and the light emitting control transistor and the resistance element are connected in series to the anode of the EL element 203B. ) Is applied to the EL element 203A in which the light emission control transistor and the resistance element are not connected in series to the anode rather than the EL element 203B in which the light emission control transistor and the resistance element are connected in series to the anode. Is bigger. Accordingly, the initial luminance of the EL element 203A in which the light emission control transistor and the resistance element are not connected in series to the anode is larger than the initial luminance of the EL element 203B in which the light emission control transistor and the resistance element are connected in series to the anode. Become.

また、陽極に発光制御用トランジスターと抵抗素子が直列接続されていないEL素子203Aに印加される電圧(実効電圧)は、陽極に発光制御用トランジスターと抵抗素子が直列接続されているEL素子203Bに印加される電圧(実効電圧)よりも大きいので、一定時間発光させたときのEL素子の劣化は、陽極に発光制御用トランジスターと抵抗素子が直列接続されていないEL素子203Aの方が、陽極に発光制御用トランジスターと抵抗素子が直列接続されているEL素子203Bよりも早くなる。   The voltage (effective voltage) applied to the EL element 203A in which the light emission control transistor and the resistance element are not connected in series to the anode is applied to the EL element 203B in which the light emission control transistor and the resistance element are connected in series to the anode. Since the voltage is higher than the applied voltage (effective voltage), the deterioration of the EL element when light is emitted for a certain period of time is that the EL element 203A in which the light emission control transistor and the resistance element are not connected in series to the anode is connected to the anode. This is faster than the EL element 203B in which the light emission control transistor and the resistance element are connected in series.

つまり、陽極に発光制御用トランジスターと抵抗素子が直列接続されていないEL素子203Aの劣化速度の方が、陽極に発光制御用トランジスターと抵抗素子が直列接続されているEL素子203Bの劣化速度よりも大きく、輝度が初期輝度の半分の値となるまでの期間(半減期)が短くなる。抵抗素子の抵抗値や駆動電圧などの条件を制御することにより、陽極に発光制御用トランジスターと抵抗素子が直列接続されていないEL素子203Aの半減期において、陽極に発光制御用トランジスターと抵抗素子が直列接続されていないEL素子203Aの輝度と、陽極に発光制御用トランジスターと抵抗素子が直列接続されているEL素子203Bの輝度との大小が切り替わるようにすることができる。   That is, the deterioration rate of the EL element 203A in which the light emission control transistor and the resistance element are not connected in series to the anode is higher than the deterioration speed of the EL element 203B in which the light emission control transistor and the resistance element are connected in series to the anode. The period (half-life) until the luminance becomes half the initial luminance is shortened. By controlling conditions such as the resistance value and driving voltage of the resistance element, the light emission control transistor and the resistance element are connected to the anode in the half life of the EL element 203A in which the light emission control transistor and the resistance element are not connected in series to the anode. The brightness of the EL element 203A not connected in series and the brightness of the EL element 203B in which the light emission control transistor and the resistance element are connected in series to the anode can be switched.

ここで、図3を用いて、交換時期表示部(抵抗値変化検出手段)207について詳細に説明する。図3に示すとおり、交換時期表示部(抵抗値変化検出手段)207は、複数の走査線101と、これら走査線101に対して交差する方向に延びる信号線102と、これら信号線102に並列に延びる共通給電線103とが配線されている。走査線101及び信号線102の交点に発光領域Xが設けられている。   Here, the replacement time display unit (resistance value change detection means) 207 will be described in detail with reference to FIG. As shown in FIG. 3, the replacement time display unit (resistance value change detection means) 207 includes a plurality of scanning lines 101, a signal line 102 extending in a direction intersecting with these scanning lines 101, and parallel to these signal lines 102. Is connected to a common power supply line 103 extending in a straight line. A light emitting region X is provided at the intersection of the scanning line 101 and the signal line 102.

信号線102に対しては、シフト-レジスター、レベルシフター、ビデオライン、及びアナログスイッチ等を備えるデータ側駆動回路が設けられている。一方、走査線101に対しては、シフトレジスター及びレベルシフター等を備える走査側駆動回路が設けられている。
また、発光領域Xの各々には、走査線101を介して走査信号(電力)がゲート電極に供給されるスイッチング用TFT(薄膜トランジスター)112と、このスイッチング用TFT112を介して信号線102から供給される画像信号を保持する保持容量113と、保持容量113によって保持された画像信号がゲート電極に供給される駆動用TFT123と、駆動用TFT123のドレイン電極(またはソース電極)と抵抗素子205を介してそのソース電極(またはドレイン電極)が接続され、EL素子203Bの発光を制御するための発光制御信号RSTがゲート電極に供給される発光制御用TFT124が設けられている。
For the signal line 102, a data side driving circuit including a shift register, a level shifter, a video line, an analog switch, and the like is provided. On the other hand, for the scanning line 101, a scanning side driving circuit including a shift register, a level shifter, and the like is provided.
Further, a switching TFT (thin film transistor) 112 to which a scanning signal (power) is supplied to the gate electrode through the scanning line 101 and a signal line 102 through the switching TFT 112 are supplied to each light emitting region X. Through the storage capacitor 113 for holding the image signal to be output, the driving TFT 123 to which the image signal held by the storage capacitor 113 is supplied to the gate electrode, the drain electrode (or source electrode) of the driving TFT 123 and the resistance element 205. A light emission control TFT 124 to which a light emission control signal RST for controlling light emission of the EL element 203B is supplied to the gate electrode is provided.

このような構成のもとに、走査線101が駆動されてスイッチング用TFT112がオンとなると、そのときの信号線102の電位(電力)が保持容量113に保持され、該保持容量113の状態に応じて、駆動用TFT123のオン・オフ状態が決まる。そして、駆動用TFT123のチャネルを介して共通給電線103から画素電極(陽極)10に電流(電力)が流れ、EL素子203A、203Bの図示しない有機化合物層(機能層)を通じて陰極50(図2参照)に電流が流れることにより、有機化合物層(機能層)中の発光層は、これを流れる電流量に応じて発光する。   Under such a configuration, when the scanning line 101 is driven and the switching TFT 112 is turned on, the potential (power) of the signal line 102 at that time is held in the holding capacitor 113, and the state of the holding capacitor 113 is reached. Accordingly, the on / off state of the driving TFT 123 is determined. Then, current (power) flows from the common power supply line 103 to the pixel electrode (anode) 10 through the channel of the driving TFT 123, and the cathode 50 (FIG. 2) passes through the organic compound layer (functional layer) (not shown) of the EL elements 203A and 203B. When a current flows through (see), the light emitting layer in the organic compound layer (functional layer) emits light in accordance with the amount of current flowing therethrough.

EL素子203Aでは、駆動用TFT123を介して共通給電線103に電気的に接続したときに、共通給電線103から画素電極(陽極)10へ駆動電流が流れ込む。しかし、EL素子203Bでは、画素電極(陽極)10と駆動用TFT123との間に抵抗素子205および発光制御用TFT124が直列接続されているので、駆動用TFT123を介して共通給電線103に電気的に接続したときに共通給電線103から抵抗素子205および発光制御用TFT124を介して画素電極(陽極)10へ駆動電流が流れ込む。   In the EL element 203 </ b> A, when electrically connected to the common power supply line 103 via the driving TFT 123, a drive current flows from the common power supply line 103 to the pixel electrode (anode) 10. However, in the EL element 203B, since the resistance element 205 and the light emission control TFT 124 are connected in series between the pixel electrode (anode) 10 and the driving TFT 123, the common power supply line 103 is electrically connected via the driving TFT 123. , A drive current flows from the common power supply line 103 to the pixel electrode (anode) 10 via the resistance element 205 and the light emission control TFT 124.

次に発光制御用TFT124の動作について説明する。発光制御用TFT124は発光制御信号線104から供給される発光制御信号によってON/OFF制御されるNチャネル型トランジスターとする。発光制御用TFT124は、発光制御信号がHighレベルのときON状態となり、抵抗素子205を設けた方のEL素子203Bが発光する。(この時、抵抗素子205が接続されていないEL素子203Aも発光している)また、発光制御信号がLOWレベルのときは、発光制御用TFT124はOFF状態となり、抵抗素子205を設けた方のEL素子203Bは消灯状態となる。ここで、本実施形態では、発光制御用TFT124はNチャネル型トランジスターとした例を示したが、これに限ったものではなく、発光制御用TFT124をPチャネル型トランジスターとしても良い。   Next, the operation of the light emission control TFT 124 will be described. The light emission control TFT 124 is an N-channel transistor that is ON / OFF controlled by a light emission control signal supplied from the light emission control signal line 104. The light emission control TFT 124 is turned on when the light emission control signal is at a high level, and the EL element 203B provided with the resistance element 205 emits light. (At this time, the EL element 203A to which the resistance element 205 is not connected is also emitting light.) When the light emission control signal is at the LOW level, the light emission control TFT 124 is turned off and the resistance element 205 is provided. The EL element 203B is turned off. In this embodiment, the light emission control TFT 124 is an N-channel transistor. However, the present invention is not limited to this, and the light emission control TFT 124 may be a P-channel transistor.

更に、発光制御信号の信号タイミングについて説明する。発光制御信号は抵抗素子205が接続されていないEL素子203Aの発光期間よりも、抵抗が接続されているEL素子203Bの発光期間が短くなるようにON/OFF制御される。ON/OFF期間は、任意に設定可能である。例えば、1走査線選択期間である1H期間、1フレーム走査期間である1V期間、nフレーム期間など)   Further, the signal timing of the light emission control signal will be described. The light emission control signal is ON / OFF controlled so that the light emission period of the EL element 203B to which the resistor is connected is shorter than the light emission period of the EL element 203A to which the resistance element 205 is not connected. The ON / OFF period can be set arbitrarily. (For example, 1H period which is one scanning line selection period, 1V period which is 1 frame scanning period, n frame period, etc.)

ここで、面発光部201のEL素子と前記EL素子203AおよびEL素子203Bの駆動タイミングは、面発光部201のEL素子の発光に連動して、交換時期表示部(抵抗値変化検出手段)207に備えられた一組のEL素子203A、203Bが発光される構成とされていることが好ましい。これにより、抵抗素子の抵抗値や駆動電圧などの条件を制御することにより、抵抗素子が接続されていないEL素子203Aの半減期において、面発光部201のEL素子の輝度が初期輝度の半分の値となるようにすることができる。   Here, the drive timings of the EL elements of the surface light emitting unit 201 and the EL elements 203A and 203B are linked with the light emission of the EL elements of the surface light emitting unit 201, and the replacement time display unit (resistance value change detecting means) 207. It is preferable that the pair of EL elements 203A and 203B provided in the device emit light. Thereby, by controlling conditions such as the resistance value and driving voltage of the resistance element, the luminance of the EL element of the surface light emitting unit 201 is half of the initial luminance in the half life of the EL element 203A to which the resistance element is not connected. Can be a value.

交換時期表示部(抵抗値変化検出手段)207の一組のEL素子203A、203Bは、面発光部201のEL素子と異なる材料および構造としてもよいが、交換時期表示部(抵抗値変化検出手段)207の一組のEL素子203A、203Bは、面発光部201のEL素子と同様の材料および構造としてもよい。   The pair of EL elements 203A and 203B of the replacement time display unit (resistance value change detection means) 207 may have a material and a structure different from those of the EL elements of the surface light emitting unit 201, but the replacement time display unit (resistance value change detection means). ) The set of EL elements 203A and 203B 207 may have the same material and structure as the EL elements of the surface light emitting portion 201.

これにより、面発光部201のEL素子と同条件で、交換時期表示部(抵抗値変化検出手段)207の一組のEL素子203A、203Bを駆動させることで、交換時期表示部(抵抗値変化検出手段)207に備えられたEL素子の発光輝度の切り替わり時点が、面発光部201のEL素子の半減期とすることができ、面発光部の交換時期を認識することができる。   Thus, by driving the set of EL elements 203A and 203B of the replacement time display unit (resistance value change detecting means) 207 under the same conditions as the EL elements of the surface light emitting unit 201, the replacement time display unit (resistance value change) The switching point of the light emission luminance of the EL element provided in the detection means 207 can be the half life of the EL element of the surface light emitting unit 201, and the replacement time of the surface light emitting unit can be recognized.

本実施形態によると、抵抗素子が接続されていないEL素子の有機化合物層(機能層)に印加される電圧(実効電圧)を、抵抗素子が接続されたEL素子の有機化合物層(機能層)に印加される電圧(実効電圧)よりも大きくすることができる。更に、前記トランジスターと抵抗素子を直列接続しているので、前記トランジスターをスイッチング素子として使用し、前記トランジスターのOFF期間を設けることで、抵抗素子が接続されたEL素子の有機化合物層(機能層)に印加される実効電圧を低減できる。これによって、輝度寿命判定結果のばらつきや誤認識を低減することが可能となる。   According to this embodiment, the voltage (effective voltage) applied to the organic compound layer (functional layer) of the EL element to which the resistance element is not connected is changed to the organic compound layer (functional layer) of the EL element to which the resistance element is connected. Can be made larger than the voltage (effective voltage) applied to. Furthermore, since the transistor and the resistance element are connected in series, the organic compound layer (functional layer) of the EL element to which the resistance element is connected by using the transistor as a switching element and providing an OFF period of the transistor. The effective voltage applied to can be reduced. As a result, it is possible to reduce variations in luminance life determination results and erroneous recognition.

10・・・画素電極(陽極)、50・・・共通電極(陰極)、101・・・走査線、102・・・信号線、103・・・共通給電線、104・・・発光制御信号線、112・・・スイッチング用TFT(薄膜トランジスター)、113・・・保持容量、123・・・駆動用TFT(薄膜トランジスター)、124・・・発光制御用TFT(薄膜トランジスター)、200・・・面発光装置、201・・・面発光部、202・・・外枠部、203A、203B・・・EL素子、205・・・抵抗素子、207・・・交換時期表示部(抵抗値変化検出手段)、X・・・発光領域。   DESCRIPTION OF SYMBOLS 10 ... Pixel electrode (anode), 50 ... Common electrode (cathode), 101 ... Scanning line, 102 ... Signal line, 103 ... Common feed line, 104 ... Light emission control signal line , 112... Switching TFT (thin film transistor), 113... Holding capacitor, 123... Driving TFT (thin film transistor), 124. Light emitting device, 201... Surface light emitting section, 202... Outer frame section, 203 A, 203 B... EL element, 205. , X ... light emitting region.

Claims (2)

基板と、
前記基板の一方の面に設けられ、第1のEL素子からなる面発光部と、
前記基板の一方の面に設けられ、前記面発光部を取り囲む外枠部と、
前記外枠部の一部に設けられた抵抗値変化検出手段と、を有し、
前記抵抗値変化検出手段は、並列に接続された第2のEL素子及び第3のEL素子と、前記第3のEL素子の陽極に接続されたトランジスターと、前記トランジスターに直列接続された抵抗素子と、
を備え
前記抵抗値変化検出手段の前記第2のEL素子及び前記第3のEL素子の発光輝度に基づき、前記面発光部の交換時期を認識させることを特徴とする照明装置。
A substrate,
A surface light emitting portion provided on one surface of the substrate and made of a first EL element;
An outer frame portion provided on one surface of the substrate and surrounding the surface light emitting portion;
A resistance value change detecting means provided in a part of the outer frame portion,
The resistance value change detecting means includes a second EL element and a third EL element connected in parallel, a transistor connected to an anode of the third EL element , and a resistance element connected in series to the transistor When,
Equipped with a,
An illuminating apparatus characterized in that the replacement timing of the surface light emitting unit is recognized based on the light emission luminance of the second EL element and the third EL element of the resistance value change detecting means .
請求項1に記載の照明装置を備えたことを特徴とする電子機器。   An electronic apparatus comprising the lighting device according to claim 1.
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