JP5589873B2 - Vaporization apparatus and film forming apparatus - Google Patents

Description

  The present invention relates to a vaporizer that vaporizes a liquid source and obtains a processing gas used for a film formation process, and a film formation apparatus including the vaporizer.

  Along with the miniaturization of semiconductor devices, a material having a high relative dielectric constant is required for the capacitance insulating film of a DRAM in order to increase the capacitance of the capacitor. As such a high dielectric constant material, a metal oxide film such as aluminum oxide, hafnium oxide or zirconium oxide is employed. These metal oxide films alternately supply, for example, a metal source gas obtained by vaporizing an organometallic liquid source and ozone gas as an oxidant to the surface of a semiconductor wafer (hereinafter referred to as “wafer”) as a substrate. The film is formed by the ALD process. The metal source gas supplies an organometallic liquid source to the inside of the vaporization container, and heats the vaporization container at a temperature at which the organometallic liquid source is not thermally decomposed, for example, at a temperature of 100 ° C. or less. Is generated by bubbling. Then, the metal source gas obtained in the vaporization vessel is supplied to a treatment vessel in which a carrier gas is introduced into the vaporization vessel and a film forming process is performed using the carrier gas.

  Here, as the miniaturization of semiconductor devices progresses, devices with a more three-dimensional structure and deep trenches are being studied. Since such a device has a large surface area, if a metal oxide film is formed on the surface of the device, the consumption of the metal source gas increases. For this reason, for example, in a batch-type film forming apparatus that holds a large number of wafers in a shelf shape and performs film formation processing at the same time (batch), the wafer W is also increased in size. There is a risk that the metal source gas will be difficult to reach the central part. As a result, there is a concern that it is difficult to secure desired electrical characteristics with the metal oxide film at the center of the wafer W.

  For this reason, it is required to increase the supply amount of the metal source gas, but the organometallic liquid source has a low vapor pressure and a low thermal stability. For this reason, when heated to a temperature higher than the vaporization temperature, it is likely to undergo thermal decomposition and change in quality, and it is difficult to increase the treatment gas concentration in the vaporization vessel by raising the heating temperature. Moreover, if the liquid level in the vaporization container is widened to increase the volatilization area, the vaporization container becomes heavy, which is not a practical solution for an actual apparatus.

  By the way, Patent Document 1 describes a technique in which a HMDS liquid is induced and diffused by a processing liquid derivative provided along an inner wall of a processing tank. However, in this method, the contact area between the treatment liquid derivative and the HMDS liquid changes with the change in the liquid amount of the HMDS liquid in the treatment tank, and thus the vaporization amount of the HMDS gas changes. For this reason, when this method is applied to vaporization of a liquid source to obtain a processing gas used for a film forming process, the amount of vaporization is not stable, and the film forming process varies.

JP-A-5-102024 (FIG. 1, paragraphs 0015 and 0016)

The present invention has been made under such circumstances. The purpose of the present invention is to stabilize the amount of vaporization and reduce the processing gas concentration when obtaining a processing gas used for film formation by vaporizing a liquid source. It is to provide a technology that can be enhanced.

The vaporizer of the present invention is
In a vaporizer for vaporizing a liquid source to obtain a processing gas used for film formation,
A container for storing a liquid source;
A heating section for heating the container;
A planar body made of a fibrous body provided in the container in surface contact with the ceiling of the container, and a liquid source spreading by capillary action;
One end side is connected to the planar body, and the other end side is provided so as to come into contact with the liquid source in the container, and a bar-shaped sucking unit that sucks the liquid source by capillary action and supplies the liquid source to the planar body;
A gas introduction port for introducing a carrier gas into the container;
And a takeout port for taking out the processing gas vaporized in the container.

Further, the vaporization method of the present invention is a vaporization method for vaporizing a liquid source to obtain a processing gas used for film formation.
Storing the liquid source and heating the container provided in a state where the planar body made of a fibrous body is in surface contact with the ceiling; and
One end side is connected to the planar body, and the other end side is sucked up by a capillary phenomenon and supplied to the planar body by a rod-shaped sucking portion provided so as to contact the liquid source in the container. And a process of
Spreading the liquid source on the planar body by capillary action;
Vaporizing the liquid source on the surface of the liquid source and on the surface of the planar body;
Introducing a carrier gas into the container;
And a step of taking out the processing gas vaporized in the container together with a carrier gas.

Furthermore, the film forming apparatus of the present invention includes:
In a film forming apparatus that performs a film forming process by supplying a processing gas to a substrate,
A processing container in which a substrate is provided ;
A vaporizer for vaporizing a liquid source to obtain a processing gas used for film formation;
A processing gas supply path for supplying the processing gas obtained by the vaporizer into the processing container;
An exhaust path for exhausting the inside of the processing container,
The vaporizer described above is used as the vaporizer.

  According to the present invention, in the container in which the liquid source is stored, the liquid source is sucked up by the sucking portion by capillary action, and is spread by the capillary action on the planar body in surface contact with the ceiling portion of the container. For this reason, when the said container is heated, a planar body will also be heated and in the said container, while a liquid source vaporizes from a liquid level, it will also vaporize from the surface of a planar body. As a result, the vaporized area is increased by the amount of the planar body, the amount of vaporization is increased, and the processing gas concentration obtained by vaporization of the liquid source can be increased. Also, since only the suction part is in contact with the liquid source, even if the height position of the liquid level fluctuates, there is no effect on the diffusion state of the liquid source to the planar body, and a stable vaporization amount is ensured. Can do.

1 is a longitudinal sectional view showing the overall configuration of an embodiment of a vaporization apparatus and a film formation apparatus according to the present invention. It is a perspective view which shows the said vaporization apparatus. It is a disassembled perspective view which shows a part of said vaporization apparatus. It is a perspective view which shows the fibrous body which comprises the planar body provided in the said vaporization apparatus, and a suction part. It is sectional drawing which shows the other example of the said vaporization apparatus. It is explanatory drawing for demonstrating the effect | action of the said vaporization apparatus. It is explanatory drawing for demonstrating the effect | action of the said vaporization apparatus. It is sectional drawing which shows the further another example of the said vaporization apparatus. It is a perspective view which shows the capillary phenomenon formation member provided in the said vaporization apparatus. It is sectional drawing which shows the further another example of the said vaporization apparatus. It is a perspective view which shows the capillary phenomenon formation member provided in the said vaporization apparatus. It is a characteristic view which shows the Example performed in order to confirm the effect of the said vaporization apparatus.

Hereinafter, an embodiment of a vaporizer according to the present invention will be described. FIG. 1 is a longitudinal sectional view showing an example of a film forming apparatus provided with the vaporizing apparatus of the present invention. In the figure, 1 is the vaporization apparatus of the present invention, and 2 in the figure is the film forming apparatus of the present invention. The vaporization apparatus 1 includes a vaporization chamber 3 that serves as a container for storing a liquid source. The vaporization chamber 3 includes a container portion 31 having an upper surface opened and a lid body 32 that closes the upper surface of the container portion 31. For example, it is comprised in the substantially cylindrical shape (refer FIG. 2). The container part 31 and the lid body 32 are made of, for example, stainless steel (SUS), and the liquid source 30 is stored therein so as to form a vaporization space S on the upper side. As the liquid source 30, a liquid metal compound containing a metal such as zirconium (Zr), hafnium (Hf), aluminum (Al), titanium (Ti), or the like is used. Here, a case where C ₁₁ H ₂₃ N ₃ Zr (tri (dimethylamino) cyclopentadienylzirconium), which is a liquid metal compound containing zirconium, is used as a liquid source will be described as an example.

  The peripheral region of the lid body 32 is configured to be placed on the upper edge portion 33 of the container portion 31, and corresponds to the upper edge portion 33 and the lid body 32, for example, as shown in FIG. Screw holes 33a and 32a are formed at the positions to be operated. Thus, the container portion 31 and the lid 32 are fixed by screws at a plurality of locations in the circumferential direction of the peripheral area of the lid 32, and an airtight space is formed therein. In FIG. 3, for convenience of illustration, only one screw 34 is shown, but screws 34 are provided corresponding to the respective screw holes 33a and 32a.

  The vaporization chamber 3 is stored in a heating jacket 35 as shown in FIGS. 1 and 2. The side wall 35a and the bottom wall 35b of the heating jacket 35 are configured to contact the side wall 3a and the bottom plate 3b of the vaporizing chamber 3, respectively. Heater heaters 36a and 36b are incorporated in the side wall 35a and the bottom wall 35b of the heating jacket 35, respectively. Further, a heater 37 is provided inside the lid 32. In this example, the heaters 36a, 36b, and 37 constitute a heating unit that heats the vaporizing chamber 3.

  Inside the vaporizing chamber 3, a capillary phenomenon forming member 4 is provided. The capillary phenomenon forming member 4 includes a planar body 41 and a sucking portion 42, and the planar body 41 is provided in the vaporizing chamber 3 in surface contact with the ceiling portion of the vaporizing chamber 3, and the capillary tube Due to the phenomenon, the liquid source 30 is made of a fibrous body that spreads. The suction part 42 is connected to the planar body 41 at one end side and is provided so that the other end side is in contact with the liquid source 30 in the vaporizing chamber 3, and sucks up the liquid source 30 by capillary action. And is configured to be supplied to the planar body 41.

  The planar body 41 and the sucking portion 42 are constituted by a plate-like fiber body having a thickness of about 5 mm made of an aggregate of metal, for example, stainless steel fibers. FIG. 4 is a trace of a micrograph of the fibrous body 43. As described above, the fibrous body 43 is configured by three-dimensionally combining the stainless fibers 44 having a thickness of about 20 μm, and the fibers 44 are recognized by the naked eye having a size of about 50 μm. A large number of minute spaces 45 that cannot be formed.

  The planar body 41 is configured, for example, in a disk shape having substantially the same size as the ceiling portion of the vaporizing chamber 3, and the upper surface thereof is in surface contact with the rear surface of the lid body 32, and the lower surface thereof is not in contact with the liquid source 30. It is provided as follows. For example, the lid body 32 and the planar body 41 are provided with at least one, for example, two screw holes 32 b and 41 a at corresponding positions, and the planar body 41 is connected to the back surface of the lid body 32 by screws 43. (See FIG. 3).

  Further, in this example, the sucking portion 42 is formed in an elongated and narrow band shape, and the outer surface thereof is provided in contact with the inner wall of the container portion 31 and the other end side thereof is provided in contact with the bottom plate 3b of the container portion 31. Yes. The planar body 41 and the sucking portion 42 are integrally formed by bending a part of the planar body 41 so as to extend downward. However, the planar body 41 and the suction part 42 may be formed separately and connected to each other by screwing.

  Further, the lid 32 is formed with an introduction hole 51 for introducing a carrier gas into the vaporization chamber 3 and an extraction hole 52 for taking out the processing gas obtained by vaporizing the liquid source in the vaporization chamber 3. Is formed. The introduction hole 51 and the extraction hole 52 correspond to a gas introduction port for introducing a carrier gas into the vaporizing chamber 3 and an extraction port for taking out the processing gas vaporized in the vaporizing chamber 3, respectively. . As shown in FIG. 3, hole portions 43 and 44 are also formed in the planar body 41 at positions corresponding to the introduction hole 51 and the extraction hole 52, respectively.

  The introduction hole 51 of the lid body 32 is connected to a carrier gas, for example, an argon (Ar) gas supply source 54 via a carrier gas supply path 53 provided with a valve V1. Further, the extraction hole 52 of the lid 32 is connected to the film forming apparatus 2 through a processing gas supply path 55 provided with a valve V2. Further, the carrier gas supply path 53 and the processing gas supply path 55 are connected by a supply path 56 provided with a valve V3. This supply path 56 is provided for purging the gas line.

  Here, the volume inside the vaporizing chamber 3 is, for example, 4 liters. When the liquid level of the liquid source 30 in the vaporizing chamber 3 is half of the full liquid state, the area of the planar body 41 is sucked. The area of the portion 52 is preferably 100 times or more.

  Next, the film forming apparatus 2 will be briefly described. In the figure, reference numeral 21 denotes a reaction tube comprising an inner tube 21a made of, for example, quartz having a lower end opened and an outer tube 21b provided around the inner tube 21a. A manifold 22 is connected to the lower end opening. A quartz wafer boat 23 on which a large number of, for example, 100 wafers W can be placed in multiple stages is inserted into the inner tube 21a from below the manifold 22. In the figure, numeral 24 is a heat retaining cylinder, and numeral 25 is a rotating mechanism for rotating the heat retaining cylinder 24 around the vertical axis. The heat retaining cylinder 24 is configured to be able to rotate while hermetically sealing. In the figure, reference numeral 26 denotes a lid, and the wafer boat 23 and the lid 26 are moved up and down by a boat elevator (not shown) so as to be carried into and out of the reaction tube 21.

  In addition, an exhaust port 20 for exhausting the atmosphere in the reaction tube 21 from between the inner tube 21a and the outer tube 21b is provided on a side portion of the manifold 22, and the exhaust port 20 serves as a pressure adjusting unit. It is connected to a vacuum pump 28 by an exhaust passage 27 provided with 27a. Furthermore, a heating mechanism 6 is provided around the reaction tube 21 so as to surround it. In the figure, 61 is a heat insulating material, and 62 is a heater.

  Further, the manifold 22 is provided with a gas supply nozzle 63 for supplying various processing gases into the inner pipe 21a. The gas supply nozzle 63 is provided so as to extend in the vertical direction along the side wall in the inner tube 21a. When the wafer boat 23 is loaded, the length of the wafer boat 23 is set to the side of the wafer boat 23. A process gas is supplied along the direction. In FIG. 1, only one gas supply nozzle 63 is drawn for convenience of illustration, but actually two or more are provided. One of the gas supply nozzles 63 is connected to the processing gas supply path 55 of the vaporizer 1, and the other gas supply nozzles are provided with a supply source 64 of an oxidizing gas such as ozone gas and a valve V4. They are connected by an oxidizing gas supply path 65. In FIG. 1, 57 and 66 are flow rate adjusting units.

  In this embodiment, a control unit 100 including a computer for controlling operations of the vaporization apparatus 1 and the film forming apparatus 2 as a whole is provided, and a memory for operating the apparatus is provided in the memory of the control unit 100. The program is stored. This program has a set of steps so as to execute the operation of the apparatus described later, and is installed in the control unit 100 from a storage medium such as a hard disk, a compact disk, a magneto-optical disk, a memory card, or a flexible disk. The program also includes a program for controlling the heaters 36a, 36b, 37, 62, the valves V1 to V4, the flow rate adjusting units 57, 66, the rotating mechanism 25, and the vacuum pump 28. Each of the above devices is controlled in accordance with a process recipe stored in advance in the memory.

Then, the effect | action of the vaporization apparatus 1 of this invention is demonstrated. First, a liquid metal compound containing zirconium, which is a predetermined amount of the liquid source 30, for example, C ₁₁ H ₂₃ N ₃ Zr, is supplied to the container portion 31, and the lid body 32 is attached to the container portion 31. At this time, the capillarity forming member 4 is attached to the lid 32 in advance.

  For example, as shown in FIG. 5, a liquid source supply hole 58a is formed in the lid 32, and the vaporization chamber 3 and the liquid source supply source 59 are connected via a liquid source supply path 58 having a valve V5. You may make it connect. In this case, the hole 45 is also formed at a position corresponding to the liquid source supply hole 58 a in the capillary phenomenon forming member 4, and the lid 32 provided with the capillary phenomenon forming member 4 is attached to the container portion 31. In this state, the liquid source is supplied into the vaporizing chamber 3 by opening the valve V5.

  Returning to the description of the operation, when the other end side of the sucking portion 42 comes into contact with the liquid source 30, the sucking portion 42 is an aggregate of fibers, so that the liquid source 30 is sucked up by capillary action as shown in FIG. The liquid source 30 gradually moves to the upper side of the suction part 42 due to capillary action. When the sheet 41 is reached, the sheet 41 spreads over the entire surface of the sheet 41 due to capillary action, and a liquid is supplied to the entire sheet 41.

  On the other hand, the vaporization chamber 3 is heated by the heaters 36a, 36b, 37 when the liquid source 30 in the vaporization chamber 3 vaporizes and does not decompose, for example, when the liquid source 30 is a liquid metal compound containing zirconium. It heats so that the temperature of the chamber 3 may be 60 degreeC or more and 100 degrees C or less. At this time, the planar body 41 is heated via the lid 32 by the heat from the heater 37, and the sucking portion 42 is also heated via the side wall 3a of the container 31 by the heat from the heaters 36a and 36b. Thus, in the vaporizing chamber 3, as shown in FIG. 7, vaporization occurs from the liquid surface of the liquid source 30, and the surfaces of the planar body 41 and the suction portion 42 become volatile surfaces, and vaporization also occurs from these surfaces. For this reason, in the vaporization chamber 3, the vaporization area is increased by the capillary phenomenon forming member 4, and the vaporization amount of the liquid source 30 is increased as compared with the case where the capillary phenomenon forming member 4 is not provided. Accordingly, in the region 30 above the liquid level of the liquid source in the vaporization chamber 3, the concentration of the processing gas containing Zr vaporized by the liquid source 30 (hereinafter referred to as “Zr gas”) is high.

  Here, at a predetermined timing, for example, a gas supply step of a film forming process described later, the valve V1 is opened to introduce a predetermined flow rate of carrier gas into the vaporizing chamber 3, and the valve V2 is opened. Thus, the processing gas (Zr gas) generated in the vaporizing chamber 3 is pushed out of the vaporizing chamber 3 by the carrier gas (Ar gas) and supplied to the film forming apparatus 2 through the processing gas supply path 55. .

On the other hand, in the film forming apparatus 2, the reaction tube 21 is heated to a predetermined temperature, the wafer W is mounted on the wafer boat 23, and is loaded into the inner tube 21a by a boat elevator (not shown), and the reaction tube 21 is evacuated by a vacuum pump. Evacuate to 28 to a predetermined vacuum level. Then, while rotating the wafer boat 23, for example, Zr gas that is a processing gas and O ₃ gas that is an oxidizing gas are alternately supplied.

Thereby, Zr gas and O ₃ gas are alternately supplied to the wafer W, Zr gas is adsorbed to form a zirconium molecular layer, and then O ₃ gas is adsorbed to oxidize the zirconium layer. One or more zirconium oxide molecular layers are formed. In this way, zirconium oxide molecular layers are sequentially stacked to form a zirconium oxide film, which is a metal oxide film having a predetermined thickness.

  According to the above-described embodiment, in the state where the surface of the vaporization chamber 3 is in surface contact with the ceiling portion, the planar body 41 made of a fibrous body in which a liquid source spreads by capillary action is provided, and one end side is provided on the planar body 41. While being connected, the other end side is provided so as to come into contact with the liquid source 30 in the vaporizing chamber 3, and a sucking portion 42 for sucking the liquid source 30 by capillary action and supplying it to the planar body 41 is provided.

  Thereby, since the liquid source 30 exists not only in the liquid level but also in the planar body 41 and the suction part 42, the size of the vaporizing chamber 3 is the same and the capillary action forming member 4 is not provided. Thus, the surface area of the region where the liquid source 30 exists increases. For this reason, since a vaporization area can be enlarged, the amount of vaporization can be increased and a process gas density | concentration can be raised.

  At this time, the vaporizing chamber 3 is heated by the heaters 36 a, 36 b, and 37, and the planar body 41 is provided so as to come into contact with the ceiling portion of the vaporizing chamber 3. Heat is transferred to. Thereby, since the planar body 41 is heated, vaporization is accelerated | stimulated and the surface of the said planar body 41 acts effectively as a volatile surface.

  If the planar body 41 is not in contact with the ceiling portion of the vaporization chamber 3, the planar body 41 is not heated, and the heat of the planar body 41 is taken away by the vaporization heat. The body 41 is cooled. When the temperature is low, the planar body 41 does not act effectively as a volatile surface, and the amount of vaporization is extremely reduced. In this example, the surface state 41 is formed to be approximately the same size as the ceiling portion of the vaporizing chamber 3 and has a large surface area. For example, when the temperature of the planar body 41 decreases by 10 ° C., the vaporization amount is reduced to about ½. It will decrease. Thus, it is important to provide and heat the planar body 41 so as to be in surface contact with the ceiling portion of the vaporizing chamber 3 as a heat source in order to increase the amount of vaporization.

  Further, since only the sucking portion 42 is provided so as to contact the liquid source 30, even if the height position of the liquid level changes, the diffusion state of the liquid source 30 to the planar body 41 is not affected. For this reason, the vaporization amount from the planar body 41 does not depend on the fluctuation of the liquid surface of the liquid source 30, and a stable vaporization amount can be ensured. At this time, the contact area between the suction part 42 and the liquid source 30 changes due to the change in the liquid level of the liquid source 30, but the suction part 42 is formed in a narrow and narrow shape. The contact area is originally small. For this reason, the amount of vaporization from the suction part 42 is considerably smaller than the amount of vaporization from the planar body 41, and the amount of vaporization from the suction part 42 varies due to fluctuations in the height position of the liquid surface of the liquid source 30. But the effect is not a problem.

  Furthermore, since the planar body 41 and the suction part 42 are comprised from the stainless fiber, it is excellent in heat resistance and there is no possibility of metal contamination. Moreover, in the configuration in which the vaporizing chamber 3 is configured by the container portion 31 and the lid body 32 and the capillary phenomenon forming member 4 is mounted on the lid body 32 as in the above-described embodiment, the capillary action is added to the existing vaporizer 3. This is effective because the forming member 4 can be incorporated and the existing vaporizer 3 can be used.

  As described above, when the liquid source is vaporized using the vaporization chamber 3 of the present invention, a processing gas having a stable vaporization amount and a high concentration can be obtained. Therefore, a high concentration processing gas having a stable concentration is formed into a film. The device 2 can be supplied. As a result, even when the metal oxide film is formed on the surface of the semiconductor device having a deep trench and a large surface area in the batch type film forming apparatus 2, the concentration is sufficiently high up to the center of the wafer W. Stable processing gas is distributed. As a result, it is possible to perform a film forming process with high in-plane stability and suppressing occurrence of variations.

  In the above, the capillary phenomenon forming member 4 is a capillary phenomenon forming member 71 having a configuration in which a plurality of, for example, two sucking portions 73a and 73b are provided on the planar body 72, as shown in FIGS. Also good. In FIGS. 8 and 9, 72 a and 72 b are holes formed in the planar body 72 corresponding to the introduction hole 51 and the extraction hole 52, respectively.

  Further, like the capillary action forming member 74 shown in FIGS. 10 and 11, the sucking portion 76 is not brought into contact with the side walls 3 a and 3 b of the vaporizing chamber 3 and is provided at a position away from the side walls 3 a and 3 b. Good. This is because the sucking portion 76 supplies the liquid source 30 to the planar body 75 by capillary action, and thus does not necessarily need to be in contact with the heat source. In FIGS. 10 and 11, 75 a and 75 b are hole portions formed in the planar body 75 corresponding to the introduction hole 51 and the extraction hole 52, respectively.

  Furthermore, in the vaporization chamber 3, when the ceiling part (lid body 32) is indirectly heated through the side wall 3a or the bottom plate 3b by heating the side wall 3a or the bottom plate 3b with the heating unit, the ceiling 3 is not necessarily limited to the ceiling. It is not necessary to provide a heating part in the part (lid 32). Moreover, a heating part may be provided only in the ceiling part (lid body 32), and the side wall 3a or the bottom plate 3b may be indirectly heated through the ceiling part (lid body 32). Furthermore, the heating part provided in the ceiling part (lid 32) is not only provided with a heating source inside the ceiling (lid 32) but also provided with a heating source outside the ceiling (lid 32). Is also included.

Furthermore, as a fiber which comprises a planar body and a suction part, ceramics etc. may be used other than metals, such as stainless steel, and you may make it use the fiber which coated stainless steel with the oxide film. As the oxide film, a metal oxide film such as alumina (Al ₂ O ₃ ) or silicon oxide film (SiO ₂ ) can be used. Depending on the type of liquid metal compound, there may be a case where the capillary phenomenon is difficult to be formed in the aggregate of stainless steel fibers, but since the hydrophilicity is increased by coating the stainless steel with alumina or a silicon oxide film, the capillary phenomenon is easily formed. It is effective in that

Furthermore, as a container for storing the liquid source, a container in which the container part and the lid are integrated may be used. Further, the planar body and the sucking portion are not necessarily formed integrally, and the planar body and the sucking portion may be formed separately and connected by screwing or the like. In this case, the fiber bodies constituting the planar body and the sucking portion may be different fiber bodies. In addition to Ar gas, nitrogen (N ₂ ) gas, helium (He) gas, or the like can be used as the carrier gas.

  In the above, the film forming process using the processing gas obtained by vaporizing the liquid source of the present invention can be applied to the film forming process for the metal nitride film and the like in addition to the metal oxide film forming process.

  Using the vaporization apparatus 1 and the film formation apparatus 2 shown in FIG. 1, the vaporization amount was calculated using tri (dimethylamino) cyclopentadienylzirconium as the liquid source and Ar gas as the carrier gas. At this time, the capillary phenomenon forming member 71 provided in the vaporizing chamber 3 has a configuration in which two sucking portions 73 are provided on the planar body 72 as shown in FIG. In the embodiment, the vaporizing chamber 3 is heated to 100 ° C., the supply flow rate of Ar gas is 1 to 2 liters / min, and the processing gas obtained by vaporizing the liquid source is supplied into the reaction tube 21 for 50 minutes. The weight before and after the supply was measured, and the amount of vaporization was calculated. Further, as a comparative example, the vaporization amount of the processing gas was calculated in the same manner as in the example when the capillary phenomenon forming member 71 was not provided in the vaporization chamber 3.

  The results are shown in FIG. 12, the examples are indicated by ◆, and the comparative examples are indicated by ◇. In the figure, the horizontal axis represents the flow rate of carrier gas (liter / min), and the vertical axis represents the flow rate (g / min) of Zr gas obtained by vaporizing the liquid source. As a result, it was confirmed that the Zr gas flow rate was larger in the example than in the comparative example, and the amount of vaporization could be increased by providing the capillary phenomenon forming member 71 including the planar body 72 and the suction part 73.

DESCRIPTION OF SYMBOLS 1 Vaporizer 2 Film-forming apparatus 21 Reaction tube 23 Wafer boat 27 Exhaust path 28 Vacuum pump
DESCRIPTION OF SYMBOLS 3 Vaporization chamber 31 Container part 32 Cover body 36a, 36b, 37 Heater 4 Capillary phenomenon formation member 41 Planar body 42 Suction part 51 Introduction hole 52 Extraction hole 55 Process gas supply path 63 Gas supply nozzle 65 Oxidation gas supply path W Semiconductor Wafer

Claims (9)

In a vaporizer for vaporizing a liquid source to obtain a processing gas used for film formation,
A container for storing a liquid source;
A heating section for heating the container;
A planar body made of a fibrous body provided in the container in surface contact with the ceiling of the container, and a liquid source spreading by capillary action;
One end side is connected to the planar body, and the other end side is provided so as to come into contact with the liquid source in the container, and a bar-shaped sucking unit that sucks the liquid source by capillary action and supplies the liquid source to the planar body;
A gas introduction port for introducing a carrier gas into the container;
A vaporization apparatus comprising: a takeout port for taking out the processing gas vaporized in the container.   The vaporization apparatus according to claim 1, wherein the ceiling of the container is a lid of the container.   The vaporizer according to claim 1, wherein the planar body and the sucking portion are provided integrally.   The vaporizer according to any one of claims 1 to 3, wherein the liquid source is a liquid metal compound.   The vaporizer according to any one of claims 1 to 4, wherein the planar body and the suction part are an aggregate of stainless steel fibers.   The vaporizer according to claim 1, wherein the heating unit is provided at least on a ceiling of the container. In a vaporization method for vaporizing a liquid source to obtain a processing gas used for film formation,
Storing the liquid source and heating the container provided in a state where the planar body made of a fibrous body is in surface contact with the ceiling; and
One end side is connected to the planar body, and the other end side is sucked up by a capillary phenomenon and supplied to the planar body by a rod-shaped sucking portion provided so as to contact the liquid source in the container. And a process of
Spreading the liquid source on the planar body by capillary action;
Vaporizing the liquid source on the surface of the liquid source and on the surface of the planar body;
Introducing a carrier gas into the container;
And a step of taking out the processing gas vaporized in the container together with a carrier gas.   The vaporization method according to claim 7, wherein the liquid source is a liquid metal compound. In a film forming apparatus that performs a film forming process by supplying a processing gas to a substrate,
A processing container in which a substrate is provided ;
A vaporizer for vaporizing a liquid source to obtain a processing gas used for film formation;
A processing gas supply path for supplying the processing gas obtained by the vaporizer into the processing container;
An exhaust path for exhausting the inside of the processing container,
A film forming apparatus using the vaporizing apparatus according to claim 1 as the vaporizing apparatus.

Images