JP5586911B2 - Method for manufacturing magnetic recording medium - Google Patents

Description

  According to the present invention, in a magnetic recording medium mounted on an HDD (hard disk drive) or the like, a magnetic recording area for recording / reproducing magnetic information and a non-recording area for magnetically separating the magnetic recording area are provided. The present invention relates to a method for manufacturing a patterned medium having magnetic recording layers arranged in the in-plane direction of a substrate.

  With the increase in information processing capacity and downsizing of equipment, there is an increasing demand for high surface recording density and miniaturization of the magnetic recording medium (magnetic disk) 21 used in the HDD 20 (FIG. 1A). As one means, a perpendicular magnetic recording system has been proposed and put into practical use. Compared with the conventional in-plane recording method, the perpendicular magnetic recording method suppresses a so-called thermal fluctuation phenomenon (a phenomenon in which the thermal stability of the recording signal is lost due to the superparamagnetic phenomenon and the recording signal disappears). Therefore, it is suitable for increasing the recording density.

  In order to further improve the surface recording density, it is required to improve the linear recording density and the track density to narrow the 1-bit recording width. As a means therefor, there is a patterned medium that patterns the magnetic recording area for recording and the non-recording area that magnetically separates the temporal magnetic recording area to prevent interference between adjacent magnetic recording portions. Patterned media includes discrete track media in which magnetic recording areas and non-recording areas are arranged in parallel in a track form, and bit patterns that are artificially arranged in an arbitrary pattern while adjoining magnetic recording areas and non-recording areas Media. FIG. 1B illustrates a conceptual diagram of a discrete track medium. A soft magnetic layer 2 is formed on an upper layer of the substrate 1, and a magnetic recording area 4a and a non-recording area 4b are arranged in parallel in a track shape thereon.

  As a technique for manufacturing patterned media, after forming a magnetic recording layer on a nonmagnetic substrate, ions are partially implanted, and the ion implanted portions are softened, demagnetized, or made amorphous. Thus, techniques for forming a magnetic pattern magnetically separated from a portion where ions are not implanted (for example, Patent Documents 1, 2, and 3) have been proposed.

  The manufacturing method is described in Patent Document 2 and Patent Document 3, for example. That is, a magnetic recording layer is formed on a nonmagnetic substrate, a resist is formed thereon, and a desired uneven pattern is formed. Thereafter, ions are implanted from the surface. Ions are shielded at the convex portion of the resist, but at the resist concave portion, the resist film thickness is so thin that the ions reach the magnetic recording layer below the resist, making the magnetic material soft, non-magnetic, or amorphous. Let Thereafter, the resist is peeled off to obtain a magnetic recording layer in which a magnetic recording layer and a nonmagnetic layer as recording portions are arranged in the plane of the magnetic recording medium. That is, this resist serves as a mask in ion implantation, and a layer formed by this resist is called a resist mask layer.

  On the other hand, as the magnetic recording technology increases in density, the flying height of the magnetic head from the substrate has been reduced to about 5 nm. In the future, this flying height is expected to become even smaller. If this happens, slight irregularities on the magnetic disk cause head crashes and thermal asperity failures, so there is a strong demand for higher flatness of the magnetic disk.

JP 2008-226428 A JP 2008-77788 A JP 2008-135092 A

  In the above-described manufacturing method of patterned media by ion implantation, removal of remaining resist has been proposed by dry etching, reactive ion etching, ion milling, and the like (Patent Document 3). However, with these techniques, such as etching, the layer immediately below the resist is etched away by excessive etching, or conversely, the etching is terminated early so as not to scrape the layer immediately below the resist. It is very difficult to determine the point at which the etching is optimally stopped in the nm order when the film cannot be completely removed.

Further, the resist recesses change due to the permeation of ions, making it difficult for the resist recesses to be etched, resulting in a phenomenon in which a resist with a thickness of 2 to 3 nm remains following the pattern of the resist recesses. For this reason, the surface flatness is also deteriorated.
As described above, in the prior art, the actual condition is that the demand for surface flatness in the order of nm, which is required for magnetic recording media with higher density, cannot be met, and a method for solving this is required.

As a result of intensive studies to solve the above problems, the present inventors have removed the resist mask layer, and then removed the layer (peeling layer) between the resist mask layer and the magnetic recording layer, thereby performing etching. If the protective layer is formed on the magnetic recording layer in which the peeling layer is removed together with the remaining resist remaining without being exposed, and has a high surface flatness and the magnetic recording region and the non-recording region are patterned, It has been found that high surface flatness can be obtained without deteriorating surface flatness due to the resist residue, and the present invention has been achieved.
The gist is as follows.

(1) Magnetic recording in which a magnetic recording area for recording / reproducing magnetic information and a non-recording area for magnetically separating the magnetic recording area are arranged in the in-plane direction of the base on the base A patterned medium manufacturing method for forming the non-recording region by irradiating the magnetic recording layer with ions,
A release layer forming step of forming a release layer mainly composed of carbon on the magnetic recording layer;
A resist mask layer forming step of forming a resist mask layer made of SOG (spin-on-glass) on the release layer;
The thickness of the resist mask layer is partially changed to form a convex portion and a concave portion of a predetermined pattern, and the convex portion has a thickness that does not transmit ions when the ions are irradiated, and the concave portion is an ion A patterning process to make the thickness sufficiently thin to transmit,
An ion irradiation step of irradiating ions from above the resist mask layer after the patterning step;
After the ion irradiation step, at least a part of the resist mask layer is removed with an alkaline solvent that does not have an etching action on the release layer but has an etching action on the resist mask layer, A resist mask layer removing step for exposing at least a part of the release layer;
After the resist mask layer removing step, the peeling layer removing step of exposing the surface of the magnetic recording layer by removing the peeling layer by plasma ashing treatment;
A patterned media manufacturing method comprising a protective layer film forming step of forming a protective layer mainly composed of carbon on the surface of the exposed magnetic recording layer after the peeling layer removing step.

  (2) In the resist mask layer removing step, the resist mask layer removing step is finished in a state where at least a part of the concave portion of the resist mask layer is left. Production method.

(3) The ion irradiation in the ion irradiation step includes B, P, Si, F, C, In, Bi, Kr, Ar, Xe, W, As, Ge, Mo, Sn, N ₂ , O ₂ , Ne, (1) or (2), wherein one or more ions selected from He and H ₂ ions are irradiated at an irradiation energy of 1 keV to 50 keV and a dose of 1E15 to 1E17 atoms / cm 2 Patterned media manufacturing method.

(4) When the thickness ts of the convex portion of the resist mask layer and the thickness of the concave portion formed in the patterning step are tc,
tc ≦ 30 nm or less 2 ≦ ts / tc ≦ 10
The method for producing a patterned medium according to any one of (1) to (3), wherein:

  (5) The method for forming a concavo-convex pattern on the resist mask layer in the patterning step is a nanoimprint method, wherein the patterned medium according to any one of (1) to (4) is used. Production method.

  (6) The method for producing a patterned medium according to any one of (1) to (5), wherein a lubricating layer is formed on the protective layer.

  (7) A patterned medium manufactured by the method for manufacturing a patterned medium according to any one of (1) to (6).

  According to the present invention, there is no unevenness due to the resist residue in the process of manufacturing a patterned medium, and a patterned medium with high surface flatness that contributes to high-density magnetic recording can be obtained.

It is a figure which shows the conceptual diagram of a hard disk drive (HDD) and a discrete track medium. FIG. 1A shows a schematic diagram of the HDD device. FIG. 1B shows a conceptual diagram of a discrete track medium. It is a figure which shows the concept of the cross-section of patterned media. It is a figure which shows the concept of the manufacturing process of the patterned media based on this invention. FIG. 3A shows a conceptual diagram of the peeling film forming step. FIG. 3B shows a conceptual diagram of the resist mask layer forming step. FIG. 3C shows a conceptual diagram of the patterning process. FIG.3 (d) shows the conceptual diagram of an ion irradiation process. FIG. 3E shows a conceptual diagram of the resist mask layer removing process. FIG. 3F shows a conceptual diagram of the release layer removing step. FIG. 3G shows a conceptual diagram of the protective layer film forming step. It is a figure which shows the MFM evaluation result of the Example of this invention.

  The present invention removes a resist mask layer that becomes a mask for ion implantation after ion implantation when manufacturing patterned media by an ion implantation method, and removes a resist residue that cannot be removed at that time as a lower layer. The protective layer is formed on the magnetic recording layer having a high surface flatness that is removed together with the layer and exposed to high surface flatness. Hereinafter, the present invention will be described in detail.

  FIG. 2 shows a conceptual diagram of the cross-sectional structure 10 of the patterned media. In general, a soft magnetic layer (SUL) 2, an intermediate layer 3, a magnetic recording layer 4, a protective layer 5, and a lubricating layer 8 are arranged in this order on a disk-shaped substrate 1 made of a nonmagnetic material. Each layer is built up. Each layer below the magnetic recording layer 4 is subdivided into several layers. In the present invention, the subdivided layer structure is not particularly limited. Each of these layers is formed by depositing a material necessary for each layer by a CVD method, a PVD method, a magnetron sputtering method, or the like.

  As the non-magnetic base material 1, glass or aluminum is usually used. The material of the glass substrate is not particularly limited. Examples thereof include glass ceramics such as aluminosilicate glass, soda lime glass, soda aluminosilicate glass, aluminoborosilicate glass, borosilicate glass, quartz glass, chain silicate glass, and crystallized glass. These glass and aluminum are processed into a disk shape, subjected to surface polishing, etc., and the glass is subjected to a treatment such as scientific strengthening and used as a non-magnetic substrate.

  The soft magnetic layer 2 is a layer for temporarily forming a magnetic circuit during recording in order to allow magnetic flux to pass through the magnetic recording layer in the perpendicular direction in the perpendicular magnetic recording method. As the material of the magnetic layer, for example, a cobalt alloy such as CoTaZr, a Co—Fe alloy such as CoFeTaZr or CoCrFeB, or the like is used.

  The intermediate layer 3 is a layer that blocks material interference between the lower soft magnetic layer 2 and the upper magnetic recording layer 4. Further, it has a so-called base function for controlling the grain size, grain size dispersion, and crystal orientation of the upper magnetic recording layer. If the intermediate layer is further divided into an upper layer and a lower layer, it is preferable for simultaneously controlling the crystal orientation and the grain size of the magnetic recording layer. For example, for the lower layer of the intermediate layer, a simple metal such as Ni, Cu, Pt, Pd, Zr, Hf, Nb, or an alloy obtained by adding W, Cr, V, Ta, Mo or the like to them can be used. On the other hand, for controlling the crystal orientation of the magnetic recording layer, for example, an hcp or fcc crystal material such as Ru, Re, Pd, or Pt, or an alloy such as RuCr or RuCo can be used for the upper layer of the intermediate layer. . In particular, Ru is effective in improving the crystal orientation of Co because it has a lattice constant close to that of Co, which is the main component of the magnetic grains of the magnetic recording layer, and has the same crystal structure.

  The magnetic recording layer 4 becomes a part for recording information which is a main function of the patterned medium. Due to the perpendicular recording system, the magnetic particles of the ferromagnetic material having a columnar structure are formed in a granular structure in which a grain boundary made of a nonmagnetic material is surrounded. As a material for the magnetic recording layer, for example, a composite material obtained by adding an oxide to a Co-based alloy, an Fe-based alloy, or a Ni-based alloy is used. A columnar granular structure can be suitably obtained by depositing this material on the intermediate layer and epitaxially growing it.

  The protective layer 5 can be formed by forming a thin film mainly made of carbon by the CVD method. The protective layer protects the magnetic recording layer from the impact of the magnetic head and has a role of increasing the reliability by suppressing the corrosion of the magnetic recording layer. In general, carbon formed by the CVD method is denser and has a higher film hardness than that formed by the sputtering method, so that the reliability can be further improved.

In the present invention, after removing the resist mask layer which becomes a mask at the time of ion implantation, the resist residue and the peeling layer under the resist mask layer are removed in a lump, and then the protective layer 5 is formed on the exposed magnetic recording layer 4. It is characterized by film formation. Therefore, the release layer 5a is first formed on the surface of the magnetic recording layer 4, and the protective layer 5b is formed at that position after removal in the manufacturing process.
Since the material of the release layer 5a is removed together with the resist, the material is not particularly limited as long as it can be removed without damaging the underlying magnetic recording layer. However, since the carbon layer is a highly reliable process, the release layer is preferably a carbon layer.

  Next, the manufacturing method of the patterned media based on this invention is demonstrated using FIG. In the manufacturing process according to the present invention, a soft magnetic layer 2, an intermediate layer 3, and a magnetic recording layer 4 are laminated on a substrate 1, and a release layer forming process, a resist mask layer forming process, a patterning process, and ion irradiation are performed. The process, the resist mask layer removing process, the peeling layer removing process, the protective layer film forming process, and, if necessary, the lubricating layer film forming process are passed in this order to obtain a patterned medium of the finished product. FIG. 3 shows a portion above the magnetic recording layer 4.

  FIG. 3A is an outline of the release layer film forming step. The release layer film forming step is a step of forming a release layer on the patterned media intermediate product laminated up to the magnetic recording layer. As described above, carbon is deposited by the CVD method. The film thickness is, for example, about 3 to 4 nm, and a uniform film forming technique with a film thickness accuracy of about ± 0.2 nm is required.

  FIG. 3B shows a resist mask layer forming process. As the resist, a resist suitable for the subsequent patterning method is selected. Here, a case where patterning is performed by the nanoimprint method will be described as an example. Of course, the patterning method is not limited to the nanoimprint method, and a lithography method used in a semiconductor can also be used.

A nanoimprint resist is used for nanoimprint. The nanoimprint resist includes a thermal nanoimprint resist, a UV curable nanoimprint resist, and a room temperature nanoimprint resist.
The thermal nanoimprint resist is melted by heating the resin, pressed with a stamper, molded, cooled and released. There is an advantage that the process and apparatus are simple.
The UV-curing nanoimprint resist is one in which a stamper is pressed, the resist is cured by UV irradiation, and released. There is no need for heating and the process is simple, but a glass mold is required for UV transmission.
The room temperature nanoimprint resist is formed by pressing a stamper, taking a mold as it is, and releasing the mold. It is a very simple process because it simply presses the stamper. However, since the pressing pressure of the stamper is high, it is necessary to develop a device for that purpose. However, it is easy to handle and the equipment configuration is not complicated.
Any of these thermal nanoimprint resists, UV-cured nanoimprint resists, and room temperature nanoimprint resists may be adopted for nanoimprint. Here, a room temperature nanoimprint resist will be described.

  A room temperature nanoimprint resist is a liquid material in which a silicon (Si) compound and additives (diffusion impurities, glassy forming agent, organic binder, etc.) are dissolved in an organic solvent (alcohol, ester, ketone, etc.). There are glass, hydrogenated silsesquioxane polymer (HSQ), hydrogenated alkylsiloxane polymer (HOSP), alkylsiloxane polymer, alkylsilsesquioxane polymer (MSQ), etc., which are called SOG (Spin On Glass) . In the resist mask layer forming step, SOG is applied on the protective layer by spin coating to form a film. The thickness is preferably about 50 to 60 nm although it depends on patterning.

FIG. 3C shows a patterning process. As shown in FIG. 3C, the magnetic track pattern is transferred (imprinted) by pressing the stamper 11. The stamper 11 passes ions through a magnetic recording region to be transferred and a non-recording region, that is, an ion shielding (mask) region where no ions are implanted into the magnetic recording layer (magnetic recording region), and ions are transmitted through the magnetic recording layer. Has a concavo-convex pattern corresponding to each pattern of the region (non-recording region) into which is injected.
During ion irradiation, a portion through which ions are transmitted becomes a concave portion of the resist mask layer in order to make the resist mask layer 6 thin, and a portion that blocks (masks) ions becomes a convex portion of the resist mask layer. The unevenness of the stamper 11 is reversed.

In other words, the thickness of the convex portion of the resist mask layer has at least a thickness that does not transmit ions when ion irradiation is performed, and the thickness of the concave portion is sufficiently thin to allow ions to pass therethrough.
For example, the resist is SOG, and the implanted ions are B, P, Si, F, C, In, Bi, Kr, Ar, Xe, W, As, Ge, Mo, Sn, N ₂ , O 2, Ne, He, If the ion irradiation energy is 1 to 50 KeV and the dose amount is 1E15 to 1E17 atoms / cm ₂ for each ion of H ₂ or two or more kinds of composite ions, the thickness of the concave portion of the resist mask layer is desirably 30 nm or less. Further, when the thickness ts of the convex portion of the resist mask layer and the thickness of the concave portion are tc at that time, the ratio of the thicknesses preferably satisfies 2 ≦ ts / tc ≦ 10. Although the thickness of the convex portion of the resist mask layer depends on the ion irradiation energy, if it is 50 nm or more, there is no ion transmission and a sufficient mask effect is obtained.

  After the pattern of the magnetic recording area is transferred by the stamper 11, the stamper 11 is separated (released) from the resist mask layer 6, thereby forming a desired uneven pattern on the resist mask layer 6. At this time, if a release agent is applied to the stamper surface, the stamper can be easily released.

  FIG. 3D shows an ion irradiation process. The intermediate product of the patterned media whose surface is covered with the resist mask layer 6 is irradiated with ions 7, and the ions 7 are implanted into the media in the portion corresponding to the concave portion of the resist mask layer. At this time, the convex portion of the resist mask layer is shielded because the resist mask layer is thick and ions 7 cannot pass through the resist. On the other hand, since the resist mask layer is thin in the concave portion of the resist mask layer, the ions 7 are transmitted through the resist mask layer 6 and the release layer 5a, and ions are implanted into the magnetic recording layer 4a immediately below.

  By injecting ions 7 into the magnetic recording layer 4, the magnetic recording layer 4a becomes soft, non-magnetic, or amorphous. Therefore, the magnetic layer is much weaker than that of a ferromagnetic layer into which ions are not implanted, so that a non-recording region is formed. Since the ion beam is highly linear, the non-recording area 4a can be formed in accordance with the shape of the concave portion of the resist mask layer. Thereby, a non-recording area 4a is formed as a separation area between the magnetic recording areas 4b. The narrower the width, the higher the magnetic recording density.

The ions to be implanted are not particularly limited, but usually B, P, Si, F, C, In, Bi, Kr, Ar, Xe, W, As, Ge, Mo, Sn, N ₂ , O ₂ , Ne, He , Any one or more ions selected from the group consisting of H ₂ are implanted. The valences of the above ions are all +1. Among the above ions, Ar, N ₂ , O ₂ , Kr, Xe, Ne, He, and H ₂ are preferably used from the viewpoint of ease of handling. Furthermore, from the viewpoint of cost, it is more preferable to use Ar, N ₂ , or O ₂ . At this time, as described above, for example, when the ion irradiation energy is 1 to 50 KeV and the dose is 1E15 to 1E17 atoms / cm 2, ions can be implanted into the magnetic recording layer through the recess of the SOG resist mask layer.

  FIG. 3E shows a resist mask layer removal process. In this step, a wet etching process using an alkali solvent is performed. As the alkaline solvent used in the wet etching process, a KOH-containing solution, a NaOH-containing solution, or the like is usually used. However, it is not particularly limited to these solutions and may be appropriately selected depending on the type of SOG.

  As described above, the portion of the resist mask layer 6 where ions have permeated has changed in quality, and a part of the removal residue 6a is generated (the right figure in FIG. 2E). Due to the alteration of the resist mask layer, it is difficult to be etched by the alkali solvent, and the portion seems to be stuck to the peeling layer 5a.

FIG. 3F shows a release layer removing process. The release layer 5a is removed by ashing. As described above, the release layer 5a is preferably a film mainly composed of carbon. In this case, for example, the carbon can be removed by burning and decomposing carbon with oxygen (ashing). As the ashing gas, N ₂ , H ₂ , H ₂ O, CF ₄ , NH ₃ , Ne, and the like can be used in addition to O ₂ , and any gas can be removed by reacting with carbon. In addition, since the magnetic recording layer is not ashed, the release layer 5a is maintained while maintaining the surface roughness of the magnetic recording layer 4 without damaging the surface of the magnetic recording layer by suitably controlling the material gas and process conditions. Can be removed. As a result, the resist remaining 6a remaining on the release layer 5a is removed together with the resist remaining 6a, which eliminates the deterioration of the surface roughness caused by the remaining resist.

  FIG. 3G shows a protective layer forming step. Since the magnetic recording layer 4 is exposed after the release layer 5a is removed, a protective layer 5b is formed on this surface. Basically, it is the same as the protective layer in the prior art.

Thereafter, a lubricating layer 8 or the like may be formed on the surface of the protective layer 5b as necessary. Normally, a finished product of a patterned medium has a lubricating layer formed on the protective layer so that damage or loss of the protective layer can be prevented even if the magnetic head comes into contact. The lubricating layer can be formed of PFPE (perfluoropolyether) by dip coating.
By passing through the above process, the patterned media of the high surface flatness which patterned by the ion implantation method are obtained.

A room-temperature nanoimprint resist (SOG) is applied to a glass substrate with a diameter of 2.5 inches formed on a magnetic recording layer like a normal magnetic disk, and a 5 nm carbon film is formed as a release layer by CVD. Then, a resist mask layer was formed. The resist mask layer thickness was 95 nm.
Next, the resist mask layer was patterned by a nanoimprint method using a stamper having an uneven width of 90 nm and a height of 150 nm, respectively. The pressing pressure at this time was 100 MPa and the pressing time was 10 seconds.
Next, ion beam irradiation was performed by irradiating the patterned magnetic disk with an ion beam. Ion implantation was performed by irradiating nitrogen ions at 20 KeV to a dose amount of 2 × 10 ¹⁶ atoms / cm ² .
Next, the magnetic disk after the ion implantation was immersed in a KOH-containing solution for 30 minutes, and the resist mask layer was removed. Thereafter, the release layer was removed by ashing, and then a carbon film having a thickness of 5 nm was formed as a protective layer by a CVD method.

  The comparative example was a patterned media manufactured by a conventional manufacturing method. In other words, a magnetic recording layer is formed on a glass substrate having a diameter of 2.5 inches in the same manner as described above up to a magnetic recording layer as in a normal magnetic disk, and a carbon film is formed thereon by a CVD method as a protective layer. The resist mask layer was subjected to patterning and ion irradiation, and then immersed in a KOH-containing solution for 60 minutes to remove only the resist mask layer. Therefore, unlike the example of the present invention, the comparative example does not remove the peeling layer (the protective layer in the comparative example) by ashing.

Surface Roughness Evaluation The surface roughness of the patterned media and the comparative material according to the present invention thus obtained was measured. The material according to the present invention had an Rmax of 2.0 nm, whereas the comparative material had an Rmax of 10 nm. there were. As a result of confirmation by AFM, in the comparative example, protrusions were confirmed along the pattern of the magnetic recording region, but this was not confirmed in the present invention example.

Glide test Further, in the RQ7800 evaluation apparatus manufactured by Hitachi High-Technologies Corporation, a glide test was performed using a glide test head equipped with a pico slider with a glide height (head flying height) of 5 nm. As a result, the example of the present invention passed (abnormal protrusions were not detected).

Confirmation of Function by MFM Further, FIG. 4 shows the measurement result of MFM (Magnet Force Microscopy) of the present invention. It was confirmed that the magnetic recording area 31 and the non-recording area 32 were clearly separated magnetically.

  As described above, it was confirmed that the patterned media manufactured by the method according to the present invention achieves a very high surface flatness and can be used for high density magnetic recording functionally.

  The present invention can be used for manufacturing high-density patterned media manufactured by an ion implantation method. In particular, since high surface flatness can be realized, it can be applied to high-density small magnetic disks and the like that will be increasingly demanded in the future.

DESCRIPTION OF SYMBOLS 1 Substrate 2 Soft magnetic layer 3 Intermediate layer 4 Magnetic recording layer 4a Magnetic recording area 4b Non-recording area 5 Protective layer 5a Release layer 5b Protective layer 6 Resist mask layer 6a Residual part of resist mask layer 7 Irradiated ions 8 Lubricating layer 10 Patterned media sectional structure 20 Hard disk drive (HDD)
21 Magnetic disk 22 Gimbal spring 23 Drive system (rotary actuator)
24 Magnetic head 31 MFM measurement result (magnetic recording area)
32 MFM measurement results (non-recording area)

Claims (5)

A magnetic recording layer on which a magnetic recording area for recording / reproducing magnetic information and a non-recording area for magnetically separating the magnetic recording area are arranged in an in-plane direction of the base. , A method of manufacturing a patterned medium for forming the non-recording region by irradiating the magnetic recording layer with ions,
A release layer forming step of forming a release layer mainly composed of carbon on the magnetic recording layer;
A resist mask layer forming step of forming a resist mask layer made of SOG (spin-on-glass) on the release layer;
The thickness of the resist mask layer is partially changed to form a convex portion and a concave portion of a predetermined pattern, and the convex portion has a thickness that does not transmit ions when the ions are irradiated, and the concave portion is an ion A patterning process to make the thickness sufficiently thin to transmit,
An ion irradiation step of irradiating ions from above the resist mask layer after the patterning step;
After the ion irradiation step, at least a part of the resist mask layer is removed with an alkaline solvent that does not have an etching action on the release layer but has an etching action on the resist mask layer, A resist mask layer removing step for exposing at least a part of the release layer;
After the resist mask layer removing step, the peeling layer removing step of exposing the surface of the magnetic recording layer by removing the peeling layer by plasma ashing treatment;
After the release layer removing step, it sees contains a protective layer forming step of forming a protective layer mainly composed of carbon on the surface of the magnetic recording layer the exposed,
In the resist mask layer removing step, the resist mask layer removing step is finished in a state where at least a part of the concave portion of the resist mask layer is left . Said ion irradiation in the ion irradiation step, B, P, Si, F , C, In, Bi, Kr, Ar, Xe, W, As, Ge, Mo, Sn, N 2, O 2, Ne, He, H one or more ion irradiation energy 1keV or more selected from _2, 50 keV or less, dose 1E15 atoms / cm ² or more, the pattern according to claim 1, wherein the irradiation with 1E17 atoms / cm ² or less A method for manufacturing a media. When the film thickness of the convex part of the resist mask layer formed in the patterning step is ts and the film thickness of the concave part is tc,
tc ≦ 30nm
2 ≦ ts / tc ≦ 10
Patterned medium manufacturing method according to claim 1 or 2, characterized in that meet. The method for producing a patterned medium according to any one of claims 1 to 3 , wherein a method of forming a concavo-convex pattern on the resist mask layer in the patterning step is a nanoimprint method. Method for producing a patterned medium according to any one of claims 1 to 4, characterized in that forming the lubricating layer on the protective layer.