JP5566032B2 - Substrate processing apparatus, semiconductor device manufacturing method, and input prohibition program - Google Patents

Description

  The present invention relates to a substrate processing apparatus, and more particularly to a substrate processing apparatus having a recipe creation / editing function.

A conventional substrate processing apparatus displays an operation unit as an operation unit that receives instructions for executing various recipes including a plurality of steps, a control unit for controlling the substrate processing apparatus, and a screen for operating instructions. A display unit is provided.
The control unit and the operation unit are configured by a computer, and various functions are mounted by a program. For example, the operation unit is equipped with a function for instructing the control unit to execute the process recipe, a monitor function for displaying the operation state of the substrate processing apparatus on the display unit in real time, and a recipe creation / editing function for creating a process recipe. Yes.

For example, in a process recipe for performing H ₂ annealing, a step for detecting oxygen concentration and hydrogen concentration is set as a check step. After detecting oxygen concentration and hydrogen concentration for a predetermined time in each step, the following steps are performed. A process recipe is configured to proceed to the step. Here, in the step of detecting the oxygen concentration and the hydrogen concentration, if the detection time not more than the lower limit value is set at the time not more than the predetermined time, the process proceeds to the next step without completing the concentration check. Thus, the step stops at the next step.
An object of the present invention is to provide a substrate processing apparatus capable of solving the above-described problems of the prior art and improving the reliability of substrate processing.

  According to one aspect of the present invention, an operation unit that receives an instruction to execute a recipe that includes a plurality of steps, and a control that performs substrate processing based on the recipe that is executed by the instruction received by the operation unit. A control means for performing the processing, wherein the operation means displays an input screen for receiving input values of the plurality of steps when the recipe is created, and the input On the screen, there is provided a substrate processing apparatus comprising: an input prohibiting unit that prohibits setting of an input value equal to or lower than a lower limit set value in a predetermined step among the plurality of steps.

  According to the present invention, the effect of greatly improving the reliability of substrate processing is exhibited.

1 is a perspective view showing a substrate processing apparatus according to an embodiment of the present invention. It is a sectional side view of the substrate processing apparatus concerning one embodiment of the present invention. It is a block diagram of the control system which controls the substrate processing apparatus concerning one embodiment of the present invention. It is an example displayed at the time of file creation / editing of the process recipe which concerns on one embodiment of this invention. It is an example of the apparatus configuration apparatus parameter setting screen which concerns on one embodiment of this invention. Is an example of a display screen device configuration system interlock dialog box of H ₂ annealing of H ₂ parameters according to an embodiment of the present invention is opened. A display screen showing how the device configuration system time input dialog box interlock screen of H ₂ annealing of H ₂ parameters according to an embodiment of the present invention is displayed. It is a diagram illustrating an example of a device configuration system parameters of H ₂ H ₂ annealing dialog boxes according to an embodiment of the present invention. It is a figure which shows an example of the dialog box for the preservation | save of the apparatus parameter file of the apparatus config which concerns on one embodiment of this invention. It is a figure which shows an example of the pop-up window at the time of step time input of the process recipe file which concerns on one embodiment of this invention. It is a figure which shows the other example of the pop-up window at the time of the preservation | save of the process recipe file which concerns on one embodiment of this invention.

  Hereinafter, a substrate processing apparatus that performs a substrate processing process such as an oxidation process, a diffusion process, a CVD process, or a heat treatment on a substrate such as a wafer will be described as a process of manufacturing a semiconductor device (LSI, IC, etc.). .

  First, the substrate processing apparatus according to the present embodiment will be described with reference to FIGS. 1 and 2. 1 and 2, reference numeral 100 denotes a substrate processing apparatus. The substrate processing apparatus 100 includes a housing 111. A front maintenance port 103 as an opening is provided in the front front portion (left side in FIG. 2) of the front wall 111a of the casing 111. The front maintenance port 103 is provided with two front maintenance doors 104 that open and close the front maintenance port 103.

A pod 110 is used as a substrate container (also referred to as a wafer carrier) for transporting the wafer 200 as a substrate into and out of the housing 111. The pod 110 is configured to store a plurality of wafers 200.
A cassette loading / unloading port 112 as a substrate container loading / unloading port for conveying the pod 110 into and out of the housing 111 is provided on the front wall 111 a of the housing 111 so as to communicate between the inside and the outside of the housing 111. The cassette loading / unloading port 112 is opened and closed by a front shutter 113 as an opening / closing mechanism.

  A load port 114 as a substrate container delivery table is provided on the front front side of the cassette loading / unloading port 112. A pod 110 is placed on the load port 114, and the pod 110 can be aligned on the load port 114. The pod 110 is mounted on the load port 114 by an in-process transfer device (not shown), and is carried out from the load port 114.

A rotary cassette shelf 105 serving as a substrate container placement shelf is provided in an upper space in a substantially central portion of the housing 111 in the front-rear direction (substantially central portion in the housing 111 shown in FIG. 2). .
The rotary cassette shelf 105 includes a support column 116 that rotates intermittently provided in the vertical direction, and a plurality of shelf plates 117 as a substrate container mounting table. The plurality of shelf plates 117 are configured to be fixed radially in a horizontal posture at each of the upper, middle, and lower positions of the support column 116. Each shelf plate 117 is configured to have a plurality of pods 110 mounted thereon.

A cassette transport device 118 as a substrate container transport device is provided between the load port 114 and the rotary cassette shelf 105 in the housing 111. The cassette transfer device 118 includes a pod elevator 118a as a substrate container lifting mechanism that moves up and down while holding the pod 110, and a pod transfer mechanism 118b as a substrate container transfer mechanism that moves horizontally while holding the pod 110. I have.
The cassette transport device 118 is configured to transport the pod 110 between the load port 114, the rotary cassette shelf 105, and a mounting table 122, which will be described later, by cooperative operation of the pod elevator 118a and the pod transport mechanism 118b. ing.

A sub-housing 119 is provided in a lower space in the housing 111 from a substantially central portion to a rear end portion in the housing 111. A pair of wafer loading / unloading ports 120 serving as substrate loading / unloading ports for conveying the wafers 200 into and out of the sub-casing 119 are provided on the front wall 119a (on the central side in the housing 111) of the sub-casing 119 in the upper and lower stages. Is provided.
Pod openers 121 are respectively provided at the upper and lower wafer loading / unloading ports 120. The pod opener 121 includes a mounting table 122 on which the pod 110 is mounted, and a cap attaching / detaching mechanism 123 as a lid attaching / detaching mechanism for attaching / detaching a cap that is a lid of the pod 110. The pod opener 121 is configured to open and close the wafer loading / unloading port of the pod 110 by attaching / detaching the cap of the pod 110 placed on the placing table 122 by the cap attaching / detaching mechanism 123.

A transfer chamber 124 is formed in the sub housing 119. The transfer chamber 124 is configured to be airtightly isolated from other spaces in the casing 111 in which the cassette transport device 118 and the rotary cassette shelf 105 are provided. A wafer transfer mechanism 125 as a substrate transfer means is provided in the front region (the center side in the casing 111) in the transfer chamber 124.
The wafer transfer mechanism 125 moves the wafer 200 on a tweezer 125c as a substrate holder and moves the wafer 200 as a substrate transfer device that moves the wafer 200 in the horizontal direction and the wafer transfer device 125a. And a wafer transfer device elevator 125b as a substrate transfer device lifting mechanism. By the cooperative operation of the wafer transfer device 125a and the wafer transfer device elevator 125b, the wafer 200 is transferred (charged) to a boat 217 as a substrate holder, which will be described later, and the wafer 200 is taken out from the boat 217 (discharge). It is configured to be able to

In the rear region in the transfer chamber 124 (the rear end portion side in the casing 111), a standby unit 126 that houses and waits for a boat 217 as a substrate holder is configured. The configuration of the boat 217 will be described later. A processing furnace 202 for processing a substrate is provided above the standby unit 126. A processing chamber 201 is formed in the processing furnace 202.
An opening is provided at the lower end of the processing furnace 202 so that the inside of the processing furnace 202 communicates with the inside of the transfer chamber 124. The opening provided in the processing furnace 202 is configured to be opened and closed by a furnace port shutter 147 as a furnace port opening / closing mechanism.

As shown in FIG. 1, a boat elevator 115 as a substrate holder lifting mechanism for moving the boat 217 up and down is provided in the housing 111. An arm 128 as a connecting tool is provided at the lower end of the boat elevator 115, and a seal cap 129 as a lid is provided in a horizontal posture on the arm 128.
The seal cap 129 is configured to vertically support the boat 217 from below and close an opening provided in the processing furnace 202 when the boat elevator 115 is lifted.
A clean unit 134 is provided at the left end in the transfer chamber 124. The clean unit 134 includes a supply fan and a dust filter, and is configured to supply clean air 133 that is a cleaned gas or an inert gas into the transfer chamber 124.
Although not shown, a notch alignment device is provided between the wafer transfer device 125a and the clean unit 134 as a substrate alignment device for aligning the circumferential position of the wafer 200. Clean air 1 supplied into the transfer chamber 124 from the clean unit 134
33 passes through the periphery of the boat 217 in the notch aligning device, wafer transfer device 125a, and standby unit 126, and is then sucked by a duct (not shown).
The gas sucked by the duct is exhausted to the outside of the casing 111 or is circulated to the primary side which is the suction side of the clean unit 134 and cleaned, and then again in the transfer chamber 124. It is configured to be supplied.

Next, the operation of the processing apparatus 100 according to the present embodiment will be described.
Prior to the cassette 110 being supplied to the cassette stage of the load port 114, the cassette loading / unloading port 112 is opened by the front shutter 113. Thereafter, the cassette 110 is loaded from the cassette loading / unloading port 112, and is placed on the cassette stage so that the wafer 200 is in a vertical posture and the wafer loading / unloading port of the cassette 110 faces upward. Thereafter, the cassette 110 is rotated 90 degrees clockwise in the clockwise direction to the rear of the casing so that the wafer 200 in the cassette 110 is in a horizontal posture and the wafer loading / unloading port of the cassette 110 faces the rear of the casing by the cassette stage.

  Next, the cassette 110 is automatically transported to the designated shelf position of the cassette shelf 105 by the cassette transport device 118, delivered, temporarily stored, and then loaded from the cassette shelf 105 by the cassette transport device 118. It is conveyed to the stage 122.

  When the cassette 110 is transferred to the mounting table 122, the wafer 200 is picked up from the cassette 110 by the tweezer 125 c of the wafer transfer device 125 a through the wafer loading / unloading port and loaded into the boat 217 behind the transfer chamber 124 (charging). ) The wafer transfer device 125 a that has delivered the wafer 200 to the boat 217 returns to the cassette 110 and loads the next wafer 200 into the boat 217.

  When a predetermined number of wafers 200 are loaded into the boat 217, the lower end portion of the processing furnace 202 closed by the furnace port shutter 147 is opened by the furnace port shutter 147. Subsequently, the boat 217 holding the wafers 200 is loaded into the processing furnace 202 when the seal cap 129 is lifted by the boat elevator 115.

  After loading, arbitrary processing is performed on the wafer 200 in the processing furnace 202. After the processing, the wafer 200 and the cassette 110 are paid out to the outside of the casing 111 in the reverse procedure described above.

  Next, a method of performing a predetermined process on the wafer 200 as one step of the semiconductor device manufacturing process using the processing furnace 202 as the processing apparatus according to the present embodiment will be described. In the following description, the operation of each part constituting the substrate processing apparatus is controlled based on a process recipe.

  When a plurality of wafers 200 are loaded into the boat 217 (wafer charge), as shown in FIG. 1, the boat 217 holding the plurality of wafers 200 is lifted by the boat elevator 115 and processed in the processing chamber 201. Is loaded (boat loading). In this state, the seal cap 129 seals the opening of the processing furnace 202.

  The processing chamber 20l is evacuated by an evacuation device so as to have a desired pressure. At this time, the pressure in the processing chamber 201 is detected by the pressure sensor 245, and the pressure adjusting device performs feedback control based on the detected pressure. Further, the inside of the processing chamber 201 is heated by a heater so as to have a desired temperature.

  At this time, the power supply to the heater is feedback-controlled based on the temperature information detected by the temperature sensor so that the inside of the processing chamber 201 has a desired temperature distribution. Subsequently, the boat 217 is rotated by the rotation mechanism, whereby the wafer 200 is rotated.

When the heat treatment described above is H ₂ annealing, the substrate is processed as follows. H ₂ annealing is used, for example, for film reduction treatment of an Al film and a Cu film that form device wiring. It may also be used for distortion of the crystal structure of the wafer 200. During this H ₂ annealing treatment, hydrogen (H ₂ ) gas is controlled to a desired flow rate by a flow rate control valve and introduced into the processing chamber 201. The H ₂ gas introduced into the processing chamber 201 flows through the processing chamber 201 by a vacuum exhaust device that exhausts the processing chamber 201, for example, a vacuum pump, and passes through an exhaust port communicating with the processing chamber 201. Exhaust from the exhaust. The H ₂ gas contacts the surface of the wafer 200 when flowing down the processing chamber 201. As a result, the wafer 200 is subjected to H ₂ annealing. The temperature and pressure of the processing chamber 201 are maintained at a temperature and pressure suitable for hydrogen annealing.

  One aspect of the above-described substrate processing apparatus performs control so that substrate processing is performed based on an operation unit that receives an instruction to execute a recipe including a plurality of steps, and the recipe that is executed by the instruction received by the operation unit. Control means. Furthermore, the predetermined step of the plurality of steps includes a check step for checking an input value (set value), and the operation means sets the input value of the plurality of steps when creating the recipe. Screen display means for displaying an input screen to be received; and input prohibiting means for prohibiting setting of an input value equal to or lower than a lower limit set value in a predetermined step among the plurality of steps on the input screen.

The substrate processing apparatus includes a semiconductor manufacturing apparatus that processes a semiconductor substrate such as a silicon wafer, and an apparatus that processes a glass substrate such as an LCD apparatus. Control means for controlling to perform substrate processing generally controls a plurality of operating units that operate to perform predetermined processing on the substrate. Each operation unit includes various controllers that operate to perform predetermined processing on the substrate. The various controllers include, for example, a temperature controller, a gas flow rate / pressure control controller, a screen display control means, a mechanical controller, and the like. Entering an input value means inputting the input value before confirmation on the input screen. In general, the input value is determined by storing the input value in a fixed storage device (HDD). In the process recipe for performing H ₂ annealing, the step of detecting the oxygen concentration and the hydrogen concentration is set as a check step.

According to one aspect of the present invention, since the input prohibiting means is provided, an illegal input value or an unknown input value is not set in the check step of a predetermined process recipe, so that the reliability of the substrate processing Can be improved. Speaking it with H ₂ anneal recipe, it is prevented to move to the next step in a state where not completed the density check, can be solved the problem that steps in the next step will be stopped.

  In order to improve the reliability of the substrate processing as described above, specifically, it is preferable to give various functions to a control system that controls the substrate processing apparatus. FIG. 3 is a block diagram of a control system for controlling such a substrate processing apparatus.

As shown in FIG. 3, the control system includes an operation unit 54 as an operation unit, a touch panel 60 as a screen display unit, and a control unit 49 as a control unit.
The operation means 54 is adapted to accept an operation by an operator. For example, a recipe composed of a plurality of steps is created, and an instruction to execute the created recipe is accepted. The touch panel 60 is provided on the operation unit 54. For example, when creating a recipe, the touch panel 60 displays an input screen for inputting input values of a plurality of steps. The control unit 49 is communicably connected to the operation unit 54, receives an instruction from the operation unit 54, and controls each operation unit to perform substrate processing based on a recipe.

  Each operation unit includes various controllers that operate to perform predetermined processing on the substrate. In the illustrated example, the various controllers include a temperature controller 52, a gas flow rate / pressure control controller 51, a mechanical controller 56, and the like. These various controllers are connected to the control unit 49 via the network LON. In particular, a sequencer is connected to the gas flow rate / pressure controller 51 via an RS232C.

  A temperature sensor, for example, a temperature sensor 57 that detects the temperature of the processing chamber 201 and a temperature sensor 58 that detects the heating temperature are connected to the temperature controller 52.

  The gas flow rate / pressure control controller 51 includes a pressure control valve (Pressure Valve) for controlling the pressure of the processing chamber 201, a supply flow rate of processing gas (oxidizing gas, annealing gas, film forming gas) to the processing chamber 201, external Each of the flow rate control devices (MFC1 to 3) for controlling the supply flow rates of oxygen gas and hydrogen gas supplied to the combustion device, and gas supply pipes (not shown) for supplying process gas, oxygen gas and hydrogen gas, respectively. A valve (not shown) is connected.

  The mechanical controller 56 includes the wafer transfer mechanism 125, the pod elevator 118a, the pod transfer mechanism 118b, the rotary cassette shelf 105, the cap attaching / detaching mechanism 123, the wafer transfer device 125a, the wafer transfer device elevator 125b, and the boat elevator. A wafer transfer system such as 115 is connected.

The sequencer 50 is connected to an O ₂ concentration detector 59 that detects the oxygen concentration in the processing chamber 201, an H ₂ concentration detector 60 that detects the hydrogen concentration, a warning lamp 61, and a buzzer 62. For example, in the H ₂ annealing, the oxygen concentration is detected by the O ₂ concentration detector 59 and managed so as to be equal to or lower than the oxygen concentration at which hydrogen gas explodes (for example, oxygen concentration 1%). Further, the hydrogen concentration is detected by the H ₂ concentration detector 60 and managed so that the hydrogen gas concentration becomes 4% or less. When the oxygen concentration or the hydrogen concentration does not become a predetermined value or less, a warning is given by the warning lamp 61 and the buzzer 62.

  When the LON network is used, the mechanical controller 56 and the temperature controller 52 are connected in the same hierarchy, so that individual maintenance can be performed without stopping the network, and the wiring can be prevented from becoming complicated. A normal LAN network including a hub and a router may be used.

  The control unit 49 and the operation unit 54 are configured by a computer including an arithmetic control unit (CPU), a storage unit, and a communication control unit. When receiving the recipe execution instruction from the operation unit 54, the control unit 49 transmits the recipe execution instruction to the temperature controller 52, the gas flow rate / pressure control controller 51, and the mechanical controller 56 via the network LON. Yes. Upon receiving the recipe execution instruction, the temperature controller 52, the gas flow rate / pressure control controller 51, and the mechanical controller 56 refer to the recipe to be executed and execute substrate processing such as hydrogen annealing in the order of the recipe steps. It has become.

Various functions are installed in the operation unit 54 by a program that uses hardware resources of a plurality of computers.
In this embodiment, a function for displaying a screen on the touch panel 60, a screen display function for searching a process recipe stored in the fixed storage device and displaying it on the screen of the touch panel, and creation / editing of a process recipe are possible. When creating a file creation / editing function, a saving function for saving the created / edited process recipe in the fixed storage device, and a check step specified in the process recipe, the judgment value is compared with the input value. An input prohibiting function for prohibiting input below the lower limit value, a receiving function for receiving an instruction from the touch panel 60, and a function for instructing the control unit 49 to execute the process recipe are mounted. The fixed storage device stores programs and various files necessary for the operation, control, and screen display of the operation unit 54 and the control unit 49.

The input prohibition function works as follows. For example, in the process recipe for performing H ₂ annealing, a step for detecting oxygen concentration and hydrogen concentration is set as a check step. The input value is checked using the lower limit set value by the input prohibition means before setting. When an input value is entered, the input value is checked against the lower limit set value. If the input value is less than or equal to the lower limit set value, in principle, the input value is prohibited and cannot be set. The timing for prohibiting the setting of the input value is, for example, at the time of input or at the time of setting.

  By the way, the substrate processing apparatus 100 performs a predetermined process on the wafer 200 by a recipe that is individually created or adjusted according to the difference in the apparatus configuration of the substrate processing apparatus 100, for example, a process recipe. Here, the process recipe is an apparatus-specific processing program related to a process sequence and control parameters (hereinafter referred to as process conditions). Control parameters include control target values such as temperature, pressure, gas type and gas flow rate, and time.

  In addition to the process recipe, the substrate processing apparatus 100 is defined by an apparatus configuration. This device configuration (hereinafter also simply referred to as device configuration) is a device-specific parameter that determines the device configuration (constant, etc. determined by the device configuration, specifications, such as device type, film type, and temperature zone). is there.

  The device configuration is basically not changed once set from the device screen (touch panel 60).

  The touch panel 60 displays a process recipe step edit screen for forming the above-described process recipe or a device configuration device parameter screen for setting a device configuration.

One process recipe is completed in a plurality of steps formed using the process recipe editing screen. For example, taking the process recipe of _{H 2} annealing to the example, each step → "001: BoatLoad" → "002: PreEVAC" → "003: LeakCheck" → _"004: N 2 Purge" → "005: _{H 2} anneal" → _"006: N 2 AfterPurge" → "007: AfterEVAC" → "008: Leak" → "009: OringLeak" → "010: BoatUnload" a, formed by using the process recipe editing screen, _{H 2} annealing process recipe To complete.

[Process recipe step edit screen]
When creating and editing process recipes, use the screen display file list function and file selection function, which are one of the file creation and editing functions, to display a list of multiple process recipes on the file list screen, and display the displayed process recipe Select the process recipe to be edited. These functions are activated when a plurality of buttons on the initial screen (operation screen) displayed on the touch panel 60 are pressed by activation. Next, the button for starting the file creation / editing function displayed on the operation screen is pressed to open the editing screen for the selected process recipe, and editing is started. On the process recipe editing screen, a step name (ID), that is, a selection button corresponding to the process name is displayed. When the selection button is touched, an edit screen for the process of the step assigned to the selection button is displayed.

FIG. 4 shows a process recipe step edit screen. In this screen, an example of a hydrogen concentration check step which is one step of a plurality of steps constituting the process recipe is shown. The file name (RECIPE01) of this process recipe is displayed in RECIPE. On the screen, a screen name such as temperature / gas flow rate setting / pressure setting in step name (ID) 006: N ₂ AfterPurge, which is one step constituting the process recipe, is illustrated. An outline of these will be described.

  In FIG. 4, in the temperature setting screen area on the left side of the screen for setting the temperature control data in the furnace, the heating mode (MODE) is set to the heater control setting (HEATER), the temperature correction table (TBL), the proportional / integral / differential ( Both PID) control sets automatic device selection (AUTO), temperature feedforward (FFC) control is not performed (NOP), QTB command is not used (NOP), temperature Y zero table (YZERO), sub-heater Both tables (S.HT) cannot be set. The variable process condition (VPC) is not used (NOP), and in ALL, the temperature and ramp rate of each zone are collectively set (SET), (RAMP), each zone U, CU, C, CL, L ( As for L, the temperature and ramp rate of each zone are set numerically.

  In the gas flow rate setting screen area at the center of the screen, an MFC function selection button for setting the gas flow rate, a GAS F function selection button for editing the valve setting, and a GAS button for the gas pattern setting screen for setting the valve opening / closing are displayed. .

A spin button indicated by a black triangle scrolls the setting state and displays up to 16 MFCs, for example. The number of MFCs varies depending on the device configuration setting.
The MFC gas name is a button for setting a VPC, and when this button is touched, a dialog box for setting the VPC is displayed. When VPC is set, the gas flow rate set value and ramp rate are automatically set.

The gas flow rate setting value box is a box for setting the gas flow rate for each channel. The gas flow unit next to the box is SLM. The unit set by the device configuration name parameter is displayed. The ramp rate box is a box for setting a ramp rate value. In the illustrated example, nitrogen _N 2 -1 to nitrogen _N 2 -2, _{H 2} of a mass flow controller (MFC), the oxygen _O 2 -1, oxygen _O 2 -2, dichloroethylene (DCE), the flow rate of the mass flow meter MFM 1, MFM2 is Here, all are 00.00LM.

  The loader function selection button on the right side of the screen is a button for editing the loader control setting value. The function can be set for boat loading, boat unloading, boat rotation, cap, and the like.

  The pressure function selection button is a button for editing the pressure control set value. MODE sets an automatic pressure control mode (PRESS) or the like, PID sets a PID table number, and VPC and SET can set a VPC value and a pressure set value in the automatic pressure control mode, respectively. In the illustrated example, in the pressure setting screen area, the mode (MODE) is NOP for both pressure (PRESS), PID, and VPC, and the pressure value (SET) is 0000.0 Pa.

  If the substrate processing apparatus is a vertical apparatus, a boat containing a large number of substrates is inserted into the vertical furnace based on the process conditions defined in the process recipe created using this editing screen. While the inside is heated to a predetermined temperature, a reaction gas is supplied into the vertical furnace to form a predetermined thin film on the substrate. After the thin film is formed, the processed boat is taken out from the vertical furnace.

On the other hand, in order to create the process recipe described above, it is necessary to set in advance apparatus configuration parameters for setting the conditions. The device configuration setting data is completed by editing and file a plurality of parameters using the device configuration device parameter screen.
Some of these functions will be described as follows.

An outline of the device configuration device parameter screen G1 will be described according to the present embodiment with reference to FIG. Incidentally, FIG. 5 is a screen when pressing RESET being displayed on the device configuration system parameter screen G1, MFC, VALVE, ALARM, LED, TIMER, and _{H 2} button of H 2, OPTION button. Furthermore, under the H ₂ button, H ₂ combustion, H ₂ anneal, diluted H ₂ anneal, DCE gas, H ₂ O unit, HCL, Ox / RIO button are displayed, and by pressing each button, Switch to the screen corresponding to the button. Incidentally, FIG. 5 are further screen when the user presses and H ₂ annealing button. On this screen, the valve number and MFC number can be specified for each gas. Further, when the exhaust button at the lower left of the screen is pressed, an unillustrated exhaust valve setting dialog box is displayed. In this exhaust valve setting dialog box, valve numbers for exhaust such as main exhaust, main exhaust sub, and main processing exhaust can be set.

Incidentally, when a button other than H ₂ (button such as RESET, MFC, VALVE...) Is pressed, the setting screen for each button is switched, and a predetermined setting can be made for each button of the buttons other than H _2. It has become.
Some of these functions will be described as follows.

In the example shown in FIG. 5, a valve & mass flow controller (MFC) / H ₂ pilot burner / interlock option setting screen in H ₂ annealing is illustrated.

In the valve & MFC setting screen area on the left side of the screen, various exhaust valve numbers such as H ₂ and N ₂ gas valve number settings, MFC number settings, flow rate check N ₂ valve number settings, main exhaust, and O-ring exhaust can be set. It is like that. Here N ₂ gas, as H ₂ gas exhausted from the exhaust system does not explode, used to dilute the H ₂ gas concentration. Alternatively, it is used for purging H ₂ gas from the processing chamber 201 after H ₂ annealing.
The H ₂ annealing process is programmed as a special sequence in the program, and operates by setting valve numbers and the like on the config H ₂ annealing screen shown in FIG. 5 and OPEN / CLOSE those valves in the recipe.

In the pilot burner setting screen area, H ₂ valve number setting, MFC number setting, ignition sequence setting, and the like can be performed. Here, the pilot burner setting screen area or ignition sequence is used to ignite and burn unreacted hydrogen gas after the H ₂ annealing treatment.

In the interlock option item of H ₂ annealing screen, "N ₂ purge", "Error Handling,""pressuresensor","option","interlock", various buttons such as "annealing temperature check" is displayed, By touching these buttons, the corresponding dialog box is opened and detailed settings can be made. For example, when an “interlock” button is touched, an interlock dialog box D1 shown in FIG. 6 to be described later is opened. Note that the inside of the processing chamber 201 after the H ₂ annealing treatment is replaced with N ₂ gas by the N ₂ purge described above.

In this way, using the device configuration device parameter screen, device-specific parameters are input to each setting item on each setting screen, and the device configuration is set by storing the parameters in the fixed storage device.

In the substrate processing apparatus 100, for example, when creating an H ₂ annealing process recipe, if there is no input prohibition function for setting a lower limit value in the time input at each step of the O ₂ concentration check and the H ₂ concentration check, the time concerned If the input is set to a predetermined value (threshold value) or less, the concentration check is not completed, and the process proceeds to the next step. In that step, the O ₂ concentration check and the H ₂ concentration check do not operate correctly, Steps will not progress, and manual recovery will be required. According to one embodiment of the present invention, an illegal input is set by adding an input prohibition function when creating or editing a process recipe by newly setting an O ₂ concentration check or H ₂ concentration check time input lower limit setting value in the device configuration. The time input value cannot be entered. As a result, the process recipe does not stop halfway when the process recipe is executed.

Next, process recipe creation / editing will be specifically described in the order of device configuration setting, process recipe creation, and device operation confirmation. Here, a process recipe for H ₂ annealing will be described as an example of the process recipe.

[H ₂ annealing related device configuration settings]
Figure 6 shows the interlocking dialog box D1 of _{H 2} anneal. To open the interlock dialog box D1 on the operation screen, the “interlock” operation button on the device configuration device parameter screen G1 shown in FIG. 5 is touched. The interlock dialog box D1 is a dialog box for setting an interlock, and includes a plurality of buttons corresponding to the interlock items. In the present embodiment, in the interlock dialog box D1, in particular, the “H ₂ concentration monitoring start delay time” (denoted as H ₂ detection time in the figure) button b2 and the “O ₂ concentration monitoring start delay time” (in the figure). O ₂ detection time hereinafter) and a button b3 are provided.

The “H ₂ concentration monitoring start delay time” button b2 and the “O ₂ concentration monitoring start delay time” button b3 are buttons used for setting detection times for detecting the oxygen concentration and the hydrogen concentration in the H ₂ annealing process. oxygen concentration, the step of setting a detection time for detecting the hydrogen concentration, respectively, in the process of H ₂ annealing is an important step to detect whether it can perform and H ₂ annealing treatment.

When setting the detection time for detecting the example hydrogen concentration in the Interlock setting screen D1 shown in FIG. 6, touch "H ₂ concentration monitoring start delay time" button b2. Then, as shown in FIG. 7, a time input dialog box D2 is displayed on the interlock screen D1.

For setting the H ₂ concentration monitoring start delay time, the numeric key K displayed in the time input dialog box D2, or the count up button B1 and the count down button B2 are used.
For example, when the set time of 40 seconds is input and the “ENTER” button is touched, the time input dialog box D2 is closed. When the time input dialog box D2 is closed, as shown in FIG. 8, it appears interlock dialog box D1, the input value to the right of the text box of the button "H ₂ detection time" is reflected. Here, the lower left SET button B4 of the interlock dialog box D1 is touched.
Then, the interlock dialog box D1 is closed, and the device configuration device parameter screen shown in FIG. 5 appears again. Touch the Save button at the top right of the screen here. Then, the SAVE dialog box D3 in FIG. 9 is opened. Here, the YES button is touched to save the set configuration data in the fixed storage device. After saving, the configuration data becomes valid by shutting down and restarting the computer.

  Setting the detection time for detecting the oxygen concentration is the same as setting the detection time for detecting the hydrogen concentration. 6 to 8, the oxygen concentration detection time is set to 30 seconds.

Create _{H 2} anneal related processes recipe
As described above, in order to newly configure the H ₂ annealing process, “001: BoatLoad” → “002: PreEVAC” → “003: LeakCheck” → “004: N ₂ Charge” → “005: H ₂ annealing” It is necessary to create a plurality of steps of “006: N ₂ AfterPurge” → “007: AfterEVAC” → “008: Leak” → “009: OringLeak” → “010: BoatUnload”.
here,
(1) O ₂ detection time (O ₂ concentration monitoring start delay time): 00'00 "to 99'59" (mm: ss)
(2) _{H 2} detection time _{(H 2} concentration monitoring start delay time): 00'00 "~99'59" (mm : ss)
Two new steps are added using the following two times.
(3) O ₂ concentration check step (step name 010)
(4) H ₂ concentration check step (step name 020)
(3) The following _N 2 Purge step, and (4) are respectively performed in the following _N 2 AfterPurge.

  The new step is checked when the step time is input and when the file is saved (when set). This will be explained.

In the process recipe step edit screen shown in FIG. 4, the step name 006: N ₂ AfterPurge is specified, and the step time, that is, the input value of the step time of the H ₂ concentration detection step is, for example,
00:00:47
The operator inputs from the touch panel 60.
Then, the function of the operation unit 54 is activated, and a check is executed on this input value at (H ₂ detection time + 5 seconds + 3 seconds).

In this example, the setting time of the H ₂ concentration detection time is set to 40 seconds for the following reason. 40 seconds is a time for the concentration to stabilize after the supply of H ₂ is started, and is an empirically derived time. In the setting of the lower limit value of the H ₂ concentration detection time, the time obtained by adding the concentration detection time and the margin to the 40 seconds is set as the lower limit value. Concentration monitoring time, the time for detecting the concentration of H ₂ with H ₂ concentration detector, margin, device-specific, with the value for the absorption model-specific error, timing (timing difference in a multi-tasking), both experience This is a derived value. It is sufficient that the density monitoring time is 5 seconds and the margin is 3 seconds. Accordingly, the lower limit value of the detection time of the H ₂ concentration is 48 seconds of 40 seconds + 5 seconds + 3 seconds.

A step (006: N ₂ AfterPurge) set in the H ₂ concentration check step ID of the device configuration parameter is set in advance in the device configuration so that this concentration check step.
The input prohibition function calculates the lower limit value by the above calculation as a determination value, and compares the determination value of 48 seconds with the input value of 47 seconds. If the input value exceeds the determination value, the determination result is YES. If the input value is less than or equal to the determination value, the determination result is NO.
When the determination result is NO, that is, when a numerical value of 47 seconds or less is input as illustrated, the input prohibition function forcibly cancels the input. Then, as shown in FIG. 10, the input prohibition function displays a pop-up window W1 instructing to input a numerical value exceeding the lower limit value, that is, in the above example, a numerical value of 48 seconds or more.
In addition to the warning, an “OK” button is displayed in the pop-up window W1. When the “OK” button is pressed, the pop-up window W1 is closed by the input prohibition function, and the process recipe step editing screen shown in FIG. 4 hidden in the pop-up window W1 appears. When the operator inputs 48 seconds, for example, according to the warning, the pop-up window W1 is not displayed, and the input of the detection time of the H ₂ concentration can be saved. The above-described input prohibition function repeats the above determination until the input value exceeds the determination value. When it is properly input, the save button b1 is touched to store the step time in the fixed storage device.

In the above-described embodiment, the concentration check step when the H ₂ concentration detection time is input has been described, but the same applies to the concentration check step when the O ₂ concentration detection time is input.

In the case of the check step for setting the detection time of O ₂ concentration, the previous page button is pressed twice in FIG. 4, 004: N ₂ Charge is selected as the step name, and the desired O ₂ concentration detection time is set as the step time. Enter. The following operations are the same as when “H ₂ concentration detection time” is input. Also in this case, as described above, the input prohibition function determines whether the input O ₂ concentration detection time is equal to or less than the lower limit value by comparing the determination value with the input value.
When the determination is NO, input of an input value is prohibited, and resetting of the O ₂ concentration detection time is requested as described above. The O ₂ detection time set by the device configuration device parameters of FIGS. 6 to 8 is 30 seconds, the concentration monitoring time is 5 seconds, and the margin is 3 seconds. Therefore, the lower limit value of the O ₂ concentration detection time is 30 seconds + 5 seconds + 3 seconds, 38 seconds, and a warning requesting an input of 38 seconds or more is displayed as a warning.

[Device operation check]
In the above-described procedure, a plurality of steps including the “004: N ₂ Charge” step are created using the process recipe step edit screen, an H ₂ annealing process is created, and this file is touched by touching the save button b1. Store in fixed storage. Finally, call this H ₂ anneal process files from the fixed storage device performs the device operation check.

FIG. 11 shows another embodiment of the input prohibition function. That is, in the embodiment described above, the input prohibition function forcibly cancels input when a numerical value equal to or lower than the lower limit value is input. However, it is not possible to satisfy the requirement for compulsory storage in the operation of the apparatus. For example, this is the case when it is confirmed that there is no influence on the substrate processing.
Therefore, in this other embodiment, even if a numerical value equal to or lower than the lower limit value has been previously input, the input value can be stored. In other words, the storage check function is configured to display the pop-up window W2 shown in FIG. 11 when the determination result of the storage determination value and the input value determination is NO. In the pop-up window W2, a “Stop” button that prompts for an input exceeding the lower limit value and a re-input is displayed, and a “Continue” button that enables saving can be displayed. Change the input value or change the input value. Without saving.

In the above-described embodiment, the case where the input prohibition function is applied when a new process recipe is created has been described. However, according to the present embodiment, an existing process recipe is checked and edited using the input prohibition function. It is also possible.
In other words, when a process recipe that has already been created is subjected to the call input prohibition function from the fixed storage device, it is automatically determined whether the set value in the process recipe check step is appropriate, so the reliability of the existing process recipe is increased. Can be secured.

In the above-described embodiment, the case where the present invention is applied to the check step of the H ₂ annealing process has been described. However, the present invention can also be applied to the case where oxidation treatment using water vapor is performed.
When an oxidation process using water vapor is performed on the wafer 200, a process gas containing hydrogen and oxygen is supplied as a process gas. The processing gas containing hydrogen and oxygen is controlled to a desired flow rate by the flow rate control valve MFC, and supplied to an external combustion apparatus (not shown).
Steam is generated by a combustion reaction between hydrogen and oxygen in the external combustion apparatus. The generated gas containing water vapor (H ₂ O) is introduced into the processing chamber 201 as a processing gas. The processing gas is exhausted from the processing chamber 201 by the exhaust of the vacuum exhaust device.
The processing gas containing water vapor comes into contact with the surface of the wafer 200 when flowing down the processing chamber 201. As a result, the wafer 200 is subjected to oxidation or diffusion treatment.

(Effect of embodiment)
Embodiments of the invention have one or more of the following effects.

(1) Since the input below the lower limit value is prohibited when editing the check step, the reliability of the substrate processing is greatly improved.
(2) Also, when a new process recipe is created, a highly reliable process recipe can be obtained. In particular, in the case of an annealing process recipe, the concentration check is executed correctly without stopping in the middle, so that it is possible to prevent the processing from stopping at the next step.

  (3) When an already created process recipe is subjected to the input prohibition function, it is automatically determined whether or not the setting value in the process recipe check step is appropriate, so that the reliability of the existing process recipe can be ensured. it can.

(4) When creating a process recipe for H ₂ annealing in the main controller of the semiconductor manufacturing apparatus, if there is no function to prohibit the input of the lower limit set value in the time input at each step of O ₂ concentration check and H ₂ concentration check, the device configuration 1 minute + concentration monitoring time (fixed to 5 seconds), assuming that the setting time (O ₂ detection time (O ₂ concentration monitoring start delay time) or H ₂ detection time (H ₂ concentration monitoring start delay time)) is 1 minute. ) + Margin (fixed for 3 seconds) = There is a possibility that a value less than 1 minute and 8 seconds may be entered, and the process proceeds to the next step during execution of the O ₂ concentration check and H ₂ concentration check, and the step proceeds there Disappear. In that case, recovery by manual operation is required, but by adding a function that prohibits the input of the lower limit set value to the time input, an incorrect value cannot be input, so the process recipe stops at an intermediate step when the process recipe is executed. Therefore, it is possible to save time and labor for recovery work. Also, if recovery fails or is troublesome, there will be an extra loss, but it will disappear.

  (5) If the input prohibition function includes a function that teaches the lower limit set value together with the warning message, the lower limit set value can be indicated by the warning message when input is prohibited, so that the correct value can be input immediately.

(6) Lower limit set value = device configuration parameter setting time (O ₂ detection time (O ₂ concentration monitoring start delay time) or H ₂ detection time (H ₂ concentration monitoring start delay time)) (00′00 ”to 99 '59 "(MM'SS")) + concentration monitoring time (fixed 5 seconds) + margin (fixed 3 seconds) By providing this margin, time errors due to differences between devices and timing are absorbed. it can.

(7) Even if the performance of the apparatus is improved and the O ₂ or H ₂ concentration check time is shortened, the apparatus configuration parameter O ₂ detection time (O ₂ concentration monitoring start delay time), H ₂ detection This can be dealt with by changing the time (H2 concentration monitoring start delay time) (FIG. 1 device configuration parameter).

(8) When storing the process recipe for H ₂ annealing, if the time of each step of the O ₂ concentration check and the H ₂ concentration check is less than the lower limit set value, a warning message can be displayed to notify the lower limit set value.

(9) In the existing process recipe, at the timing when the save button b1 is pressed when saving, it is possible to check whether the time of each step of the O ₂ concentration check and the H ₂ concentration check is less than the lower limit setting value, It can also be saved.

  (10) If the time input lower limit warning message is displayed by pressing the save button in the existing process recipe that is operating without problems, but you do not want to change the time, you can press the continue button and save it as is. .

<Appendix>
Hereinafter, preferred embodiments of the present invention will be additionally described.

(1) An operation unit that receives an instruction to execute a recipe including a plurality of steps, and a control unit that controls to perform substrate processing based on the recipe executed by the instruction received by the operation unit. The substrate processing apparatus, wherein the plurality of steps include a check process for checking an input value, and the operation unit inputs an input value of each of the plurality of steps when creating the recipe. And an input prohibiting unit for prohibiting setting of an input value equal to or lower than a lower limit set value when setting an input value in a predetermined check step on the input screen. Substrate processing equipment.

(2) When prohibiting the setting of the input value or storing the input value, if the setting value of the check step, such as time, is less than the lower limit setting value, a warning message and It is preferable to teach a set value. As a result, the appropriate size of the input value is known, and the check step can be executed with the appropriate value.

(3) Saving may be permitted even when the input value is less than the lower limit set value. This can cope with a case where the substrate processing is not affected, or a case where the state of the substrate processing is intentionally reproduced.

(4) The check step may be a density check.

(5) The concentration may be an H ₂ concentration and / or an O ₂ concentration.

(6) An operation unit that receives an instruction to execute a recipe including a plurality of steps, and a control unit that controls to perform substrate processing based on the recipe executed by the instruction received by the operation unit. A method of manufacturing a semiconductor device using a substrate processing apparatus, wherein the plurality of steps include a check process for checking an input value, and the operation means includes a screen display means and an input prohibition means, When the display means creates the recipe, an input screen for inputting the input values of the plurality of steps is displayed, and when the input value in the predetermined check step is set on the input screen, the input is performed. There is provided a method of manufacturing a semiconductor device, wherein the prohibiting means prohibits setting of an input value less than a lower limit set value.

(7) When setting the input value in the predetermined check step on the input screen, the input rule is set by setting the check rule for collating the input value to an area range value having a width instead of a lower limit value. If these rules are not met, input prohibition means for prohibiting the setting of the input value can be used.

  The present invention is preferably used as a check step for an annealing process recipe. However, the present invention is applicable to creation and editing of process recipes for other substrate processing apparatuses, for example, horizontal substrate processing apparatuses and single-wafer type substrate processing apparatuses. can do. Further, the substrate processing according to the present invention can be applied not only to a silicon substrate but also to a glass substrate. As described above, the present invention can be variously modified, and the present invention naturally extends to the invention thus modified.

49 Control unit (control means)
54 Operation part (operation means)
60 Touch panel (screen display means)
100 Substrate processing equipment

Claims (11)

A substrate processing apparatus including at least an operation unit that receives an instruction to execute a recipe including a plurality of steps,
The operation means includes
Screen display means for displaying an input screen for receiving input values of the plurality of steps,
An input prohibiting means for prohibiting setting of an input value equal to or lower than a lower limit set value in a predetermined step among the plurality of steps;
When creating the recipe on the input screen, if at least one concentration check step for checking the input value among the plurality of steps is set, the lower limit setting value is set in the concentration check step. The substrate processing apparatus is characterized in that setting of the input value is prohibited when the input value is equal to or lower than the lower limit set value.   The substrate processing apparatus according to claim 1, wherein the input prohibiting unit displays the lower limit set value together with a warning message instructing to input the lower limit set value when the input value setting is prohibited. The input inhibition means, when prohibiting setting of the input value, and displays the "OK" button with a warning message, according to the "OK" button is configured to not accept the setting up is pressed Item 1. The substrate processing apparatus according to Item 1.   The substrate processing apparatus according to claim 1, wherein the input prohibiting unit is configured to permit storage even when the input value is less than the lower limit set value.   The input prohibition means, when the input value is less than the lower limit set value, together with a message that prompts input of the lower limit set value or more, a “stop” button that prompts a change of the input value, and enables saving. 5. The substrate processing apparatus according to claim 4, wherein a “continue” button is displayed. The concentration, _{H 2} concentration and / or _{O 2} concentration in a substrate processing apparatus according to claim 1. The substrate processing apparatus according to claim 1, wherein the recipe is a recipe for performing any one of an H ₂ annealing process, an oxidation process, and a diffusion process.   The substrate processing apparatus according to claim 1, wherein the lower limit set value is set as a sum of a detection time, a concentration monitoring time, and a margin (fixed value). The check rule for checking the input value in the density check step is a rule for checking using a range value having a width instead of the lower limit set value, so that the input value does not match the check rule. 2. The substrate processing apparatus according to claim 1, wherein setting of the input value is prohibited. An operation process for creating or editing a recipe composed of a plurality of steps;
A manufacturing method of a semiconductor device including a substrate processing step of processing the substrate by executing the recipe created or edited,
The operation step includes
A screen display step for displaying an input screen for receiving the input values of the plurality of steps,
An input prohibiting step for prohibiting setting of an input value equal to or lower than a lower limit set value in a predetermined step among the plurality of steps;
In the input prohibition step, when creating the recipe on the input screen, if at least one concentration check step for checking the input value is set among the plurality of steps, the concentration check step The method of manufacturing a semiconductor device, wherein the lower limit set value and the input value are collated, and setting of the input value is prohibited when the input value is equal to or lower than the lower limit set value. An input prohibition program executed by a substrate processing apparatus including at least an operation unit that receives an instruction to execute a recipe including a plurality of steps,
When creating the recipe on the input screen, if at least one concentration check step for checking an input value among the plurality of steps is set, in the concentration check step, a lower limit set value and the input An input prohibition program that collates values and prohibits the setting of the input value when the input value is less than or equal to the lower limit set value.

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