JP5529069B2 - Electron beam exposure apparatus and exposure mask - Google Patents

Description

  The present invention relates to a multi-column electron beam exposure apparatus and an exposure mask that perform exposure processing in parallel in a plurality of column cells.

  2. Description of the Related Art In recent years, semiconductor devices have been miniaturized, and a fine pattern is drawn on a wafer using an electron beam exposure apparatus.

  As one of such electron beam exposure apparatuses, a multi-column type electron beam exposure is performed in which a plurality of column cells for irradiating an electron beam are arranged side by side on a wafer stage and exposure processing is performed in parallel using these column cells. A device has been proposed.

  Each column cell of the multi-column electron beam exposure apparatus is provided with an exposure mask for shaping the electron beam into a predetermined pattern shape, and the wafer surface is irradiated with the electron beam shaped into the predetermined shape. Perform exposure.

JP 2006-278492 A

  However, the opening pattern of the exposure mask of each column cell has a slightly different line width (size) for reasons of the manufacturing process. Therefore, even if exposure is performed using the same opening pattern in each column cell, the finished dimensions of the pattern vary between the column cells.

  Accordingly, a multi-column electron beam exposure apparatus and an exposure mask are provided that can suppress variations in pattern finish dimensions between column cells even when the line widths of the opening patterns of the exposure masks of the column cells are different. The purpose is to do.

The above-described problems are provided in a plurality of column cells that are arranged above the sample and irradiate an electron beam in parallel to expose the sample, and in portions corresponding to the column cells, and each has a similar shape. An exposure mask having a pattern group in which a plurality of patterns having different line widths are arranged in the order of the line widths, and the finish of the pattern provided in each column cell and obtained by measuring in advance the design value of the line width of the pattern A pattern data processing unit that changes a pattern used for exposure from a specified pattern to a pattern having a different line width by the amount of deviation based on the amount of deviation from the dimension; and the exposure mask selected by the pattern data processing unit comprising a mask deflection unit for deflecting the electron beam in the pattern of the above, the respective patterns of the exposure mask, the line width by length Δd in the column direction is increased Moni, the length [Delta] d × row direction n (where, n is a natural number of 2 or more) are solved by an electron beam exposure apparatus by the line width is arranged to increase.

Another object of the present invention is to provide an exposure mask for use in an electron beam exposure apparatus that performs exposure in parallel by irradiating an electron beam from a plurality of column cells, and includes a thin wafer and each of the columns on the wafer. A plurality of patterns each having a similar shape and different line widths arranged in order of the line widths , each pattern having a length Δd in the column direction. This is solved by an exposure mask characterized by being arranged side by side so that the width increases and the line width increases by Δd × n (where n is a natural number of 2 or more) in the row direction .

  The electron beam exposure apparatus uses an exposure mask in which patterns having similar shapes and different line widths are arranged in the line width order. Based on the amount of deviation between the line width actually obtained in each column cell and the designed line width of the pattern used for exposure, the pattern used for exposure is equivalent to the amount of deviation. change.

  Thereby, even if the line width of the pattern of the exposure mask varies, the pattern used for exposure is changed between the column cells 11, so that variations in the line width can be prevented.

FIG. 1 is a block diagram of an electron beam exposure apparatus according to an embodiment. FIG. 2 is a plan view showing an area where each column cell of the electron beam exposure apparatus of FIG. 1 performs drawing on the wafer. FIG. 3 is a block diagram of each column cell of the electron beam exposure apparatus of FIG. FIG. 4 is a view showing an exposure mask according to the first embodiment. FIG. 5 is a schematic diagram showing an example of the arrangement of CP patterns on the exposure mask of FIG. FIG. 6 is a schematic diagram showing a CP pattern changing method based on the line width deviation amount Δw in the arrangement of the CP pattern of FIG. FIG. 7 is a block diagram of the mask deflection control unit of FIG. FIG. 8 is a diagram illustrating an example of the conversion table. FIG. 9 is a diagram illustrating an example of mask data stored in the mask memory. FIG. 10 is a flowchart showing an electron beam exposure method by the electron beam exposure apparatus according to the first embodiment. FIG. 11 is a diagram illustrating an example of the change amount (jump vector) of the irradiation position of the electron beam on the exposure mask according to the first embodiment. FIG. 12 is a diagram illustrating an example of the exposure operation time and the waiting time of each column cell of the electron beam exposure apparatus according to the first embodiment. FIG. 13 is a view showing the arrangement of the CP pattern of the exposure mask according to the second embodiment. FIG. 14 is a schematic diagram showing the arrangement of the CP pattern of the exposure mask according to the modification of the second embodiment.

  Hereinafter, embodiments will be described with reference to the accompanying drawings.

  FIG. 1 is a block diagram of an electron beam exposure apparatus according to an embodiment.

  As shown in FIG. 1, the electron beam exposure apparatus 1 includes an electron beam column 10 including a plurality of column cells 11 and a control unit 20 that controls the electron beam column 10. Among these, the control unit 20 includes an electron gun high-voltage power supply 21, a lens power supply 22, a buffer memory 23, a stage drive controller 24, and a stage position sensor 25.

  The electron gun high-voltage power supply 21 generates a high voltage for driving the electron gun of each column cell 11 in the electron beam column 10. The lens power supply 22 supplies a drive current to the electromagnetic lens of each column cell 11 in the electron beam column 10. The buffer memory 23 is prepared in correspondence with the number of column cells 11, stores exposure data sent from the integrated control system 26, sequentially reads the exposure conditions of each shot included in the exposure data, and Transfer to cell 11. The stage drive controller 24 moves the position of the wafer 12 based on the position information from the stage position sensor 25.

  Each part 21-24 of said control part 20 is controlled by the integrated control system 26 which consists of a workstation etc. FIG.

  The electron beam column 10 includes a plurality of, for example, four equivalent column cells 11. A wafer stage 13 on which the wafer 12 is mounted is disposed under each column cell 11.

  FIG. 2 is a plan view showing an area where each column cell 11 performs drawing on the wafer 12. FIG. 2 shows a case where the electron beam column 10 includes four column cells 11.

  As shown in FIG. 2, each column cell 11 performs exposure by irradiating different regions a1, b1, c1, and d1 on the wafer 12 with an electron beam for a predetermined time in one shot. Each column cell 11 repeats such a shot while changing the irradiation position of the electron beam EB and the position of the wafer, thereby exposing each of the areas a to d on the wafer 12.

  FIG. 3 is a block diagram of the column cell 11 of the electron beam exposure apparatus 1 of FIG.

  As shown in FIG. 3, the column cell 11 is roughly divided into an exposure unit 100 and a column cell control unit 31 that controls the exposure unit 100. Among these, the exposure unit 100 includes an electron beam generation unit 130, a mask deflection unit 140, and a substrate deflection unit 150.

  The electron beam generator 130 generates an electron beam EB from the electron gun 101 and converges the electron beam EB with the first electron lens 102 to generate an electron beam EB having a predetermined current density. Further, the converged electron beam EB is shaped into a rectangular cross section by passing through the rectangular aperture 103 a of the beam shaping mask 103.

The electron beam EB generated in this way by the electron beam generator 130 is imaged on the exposure mask 110 by the second electron lens 105 of the mask deflector 140. Then, the electron beam EB is the first electrostatic deflector 104 and the second electrostatic deflector 106 and is deflected to a particular pattern S _i formed on the exposure mask 110. Electron beam EB, by passing through the exposure mask 110, the shape of its cross section is shaped into the shape of the pattern S _i.

In addition, although the exposure mask 110 is fixed to the mask stage 123, the mask stage 123 can move in a horizontal plane. When using the pattern S _i in a portion exceeding the deflection range (beam deflection region) of the first electrostatic deflector 104 and the second electrostatic deflector 106, the mask stage 123 is moved to move the pattern S _i. Is moved into the beam deflection region.

  The third electromagnetic lens 108 and the fourth electromagnetic lens 111 arranged above and below the exposure mask 110 form an image of the electron beam EB on the wafer 12.

  The electron beam EB that has passed through the exposure mask 110 is returned to the optical axis C by the third electrostatic deflector 112 and the fourth electrostatic deflector 113 and then reduced in size by the fifth electromagnetic lens 114.

  The deflection aberration of the electron beam EB generated by the electrostatic deflectors 104, 106, 112, and 113 of the mask deflector 140 is corrected by the first correction coil 107 and the second correction coil 109.

  Thereafter, the electron beam EB passes through the aperture 105 a of the shielding plate 115 provided in the substrate deflecting unit 150 and is deflected to a predetermined position on the wafer 12 by the fifth electrostatic deflector 119 and the electromagnetic deflector 120. . The electron beam EB is projected onto the surface of the wafer 12 through the first projection electromagnetic lens 116 and the second projection electromagnetic lens 121.

  The deflection aberration of the electron beam EB generated by the deflectors 119 and 120 of the substrate deflecting unit 150 is corrected by the third correction coil 117 and the fourth correction coil 118.

With the above electron optical system, an image of the pattern S _i of the exposure mask 110, a predetermined reduction ratio, is transferred onto the wafer 12, for example 1/10 reduction ratio.

  On the other hand, the column cell control unit 31 includes an electron gun control unit 202, an electron optical system control unit 203, a mask deflection control unit 204, a mask stage control unit 205, a blanking control unit 206, and a substrate deflection control unit 207. Among these, the electron gun control unit 202 controls the electron gun 101 to control the acceleration voltage of the electron beam EB, beam emission conditions, and the like. The electron optical system control unit 203 controls the amount of current supplied to the electromagnetic lenses 102, 105, 108, 111, 114, 116, and 121, and adjusts the magnification and the focal position of the electron optical system. The mask deflection control unit 204 controls the voltage applied to the first electrostatic deflector 104 and the second electrostatic deflector 106 to guide the electron beam EB to a desired pattern on the exposure mask 110.

  The blanking control unit 206 controls the voltage applied to the blanking electrode 127 to allow the electron beam EB to irradiate the surface of the wafer 12 through the aperture 115a of the shielding plate 115 for a predetermined exposure time. The substrate deflection control unit 207 controls the voltage applied to the fifth electrostatic deflector 119 and the amount of current supplied to the electromagnetic deflector 120 to deflect the electron beam EB to a desired position on the wafer 12.

  Each of the units 202 to 207 of the column cell control unit 31 operates based on the exposure data sent from the integrated control system 26 via the buffer memory 23.

  Hereinafter, the exposure mask 110 used in the electron beam exposure apparatus 1 of the present embodiment will be described.

  FIG. 4A shows an exposure mask 110 used in the electron beam exposure apparatus 1 of the present embodiment. As shown in FIG. 4A, the exposure mask 110 includes membrane regions 161a to 161d on which a pattern for exposure of each column cell 11 is gathered on a thin substrate 160. These membrane regions 161a to 161d are arranged to be spaced apart from each other by the same distance d (for example, about 75 mm) as the distance between the column cells 11. Each of the membrane regions 161a to 161d is formed in a square region having a side length of about 10 mm, and a plurality of pattern groups 162 are provided in these membrane regions 161a to 161d. Each pattern group 162 is a square area of about 1.6 mm square, and a plurality of rectangular partial projection (CP) patterns 163 of about 4 μm square are formed in the pattern group 162. Yes. These CP patterns 163 are formed in the deflection range by the first electrostatic deflector 104 and the second electrostatic deflector 106 in each pattern group 162, and are CP patterns 163 belonging to the same pattern group 162. If so, exposure can be performed by changing the deflection amount of the electron beam EB without moving the exposure mask 110.

  FIG. 4B shows an example of the CP pattern 163. In the CP pattern 163, opening patterns 164 to 166 are formed. In the illustrated example, the CP pattern 163 is formed with line-shaped opening patterns 164 and 165 in the vertical and horizontal directions having a width w and circular opening patterns 166 having a diameter w. In the CP pattern 163 of FIG. 4B, the length of the line pattern in the vertical direction or the horizontal direction can be adjusted by the overlap (hatched portion) of the opening patterns 164 and 165 and the rectangular electron beam EB. Further, if a rectangular electron beam EB is superimposed on the opening pattern 166, a circular pattern having a diameter w can be formed.

  FIG.4 (c) is sectional drawing of the part along the AA of FIG.4 (b). The exposure mask 110 includes a silicon nitride film (membrane) 168 that transmits an electron beam EB and a silicon film 169 on a wafer (silicon substrate) 160 having a thickness of about 700 μm that mechanically supports the entire exposure mask 110. Are stacked. Opening patterns 164 to 166 are formed in the silicon film 169, and the silicon film 169 selectively transmits an electron beam through the opening patterns 164 to 166. In addition, an opening 160a having a larger diameter than the opening patterns 164 to 166 is formed in the silicon substrate 160 below the opening patterns 164 to 166.

  By the way, in the exposure mask 110 described above, the size of the opening pattern varies in the plane of the silicon substrate 160 due to fluctuations in manufacturing process conditions. Therefore, the actual line width differs between the membrane regions 161a to 161d of the column cells 11 even if the design line width of the CP pattern 163 is the same. Therefore, even if exposure is performed using the CP pattern 163 having the same line width in each column cell 11, the line width of the formed pattern varies.

  Therefore, the inventors of the present application examined the tendency of variation in the line width of the CP pattern 163 in the plane of the substrate 160 in the exposure mask 110 described above. As a result, it has been clarified that the line width of the CP pattern 163 is shifted by a predetermined line width Δw depending on the position on the substrate 160. For example, the CP patterns 163 having design line widths of 90 nm, 80 nm, 70 nm, and 60 nm, respectively, are shifted by a certain amount of deviation Δw regardless of the line width, such as 90 nm + Δw, 80 nm + Δw, 70 nm + Δw, and 60 nm + Δw. Further, the deviation amount Δw is gradually changed in the substrate 160, and the value of the deviation amount Δw in each of the membrane regions 161a to 161d of about 10 mm square can be regarded as almost constant.

  FIG. 5 is a view showing the arrangement of the CP pattern 163 of the exposure mask 110 of this embodiment. In the partially enlarged view of FIG. 5, the shape of the opening pattern in the CP pattern 163 is omitted, and only the line width (design value) of the opening pattern of the CP pattern 163 is shown as the size when transferred onto the wafer 12. ing.

  In the exposure mask 110 of the present embodiment, as shown in FIG. 5, in each pattern group 162, opening patterns each having a similar shape and increasing in line width by a constant value Δd are arranged in order of size. Here, the increase width Δd of the line width of each CP pattern 163 is set to a value smaller than the allowable error of the finished line width of the pattern on the wafer 12, for example, about 0.5 nm.

  Since the reduction magnification of the electron beam exposure apparatus 1 is 10, the line width of each CP pattern 163 changes by 0.5 × 10 = 5 nm on the actual exposure mask 110.

  Next, electron beam exposure is performed in each column cell 11 using the exposure mask 110 described above, and a deviation amount Δw between the finished line width of the actually formed pattern and the designed line width of the CP pattern 163 is obtained. Thereafter, based on the shift amount Δw, the CP pattern 163 used in each column cell 11 is changed to a CP pattern 163 having a line width that differs by the shift amount Δw.

  6A to 6C are schematic diagrams for explaining a method of changing the CP pattern 163 based on the difference between the designed line width and the finished line width of the actually formed pattern. In FIG. 6, a portion surrounded by a thick line indicates a CP pattern 163 corresponding to a finish line width of 12 nm to 31 nm.

  For example, when the actual finished line width is 2 nm larger than the design value of the line width of the CP pattern 163 (Δw = + 2 nm), a CP pattern 163 smaller by 2 nm than the design value is formed as shown in FIG. Use. When the actual finished line width is the same as the design value of the line width of the CP pattern 163 (Δw = 0 nm), a CP pattern having the same line width as the design value is used as shown in FIG. Further, when the actual finished line width is 2 nm smaller than the design value of the line width of the CP pattern 163 (Δw = −2 nm), the CP pattern 163 larger by 2 nm than the design value is formed as shown in FIG. Use.

  In the electron beam exposure apparatus 1 of the present embodiment, the CP pattern 163 is changed by the mask deflection control unit 204 of each column cell 11.

  FIG. 7 is a block diagram of the mask deflection control unit 204 of FIG. 3, and FIG. 8 is a diagram showing an example of a pattern data code conversion table. FIG. 9 is a diagram illustrating an example of data stored in the mask memory.

  The mask deflection control unit 204 includes a pattern data processing unit 211, a pattern data code (PDC) conversion table 212, a mask memory 213, and a drive circuit 214. Among these, in the pattern conversion table 212, as shown in FIG. 8, in the exposure data, a pattern data code (PDC) for specifying which pattern is used for exposure and the actual exposure should be used. Data representing a correspondence relationship with a PDC that designates a pattern is stored. In this PDC conversion table 12, the correspondence relationship of the PCD is determined so as to cancel out the shift amount Δw between the actual finished line width and the designed line width based on the CP pattern 163 obtained by measurement in advance.

  The mask memory 213 stores the PDC and the position coordinates X and Y on the exposure mask of the pattern specified by the PDC as shown in FIG.

  The pattern data processing unit 211 extracts the PDC 35 from the exposure conditions (exposure data) of each shot sent from the buffer memory 23. Then, with reference to the pattern conversion table 212, the PDC 35 of the exposure data is converted into a PDC that is actually used. Further, the pattern data processing unit 211 extracts the position coordinates X and Y on the exposure mask 110 of the converted PDC with reference to the mask memory 213 and sends them to the drive circuit 214.

  The drive circuit 214 outputs a predetermined control signal to the first electrostatic deflector 104 and the second electrostatic deflector 105 in order to change the electron beam EB to the position coordinates X and Y on the exposure mask 110.

  The drive circuit 214 outputs a control signal to the first electrostatic deflector 104 and the second electrostatic deflector 106 in order to deflect the electron beam EB based on the coordinate data acquired from the pattern data processing unit 211.

  Thereby, the line width of the CP pattern can be made uniform between the column cells 11.

  Next, an exposure method using the electron beam exposure apparatus 1 will be described.

  FIG. 10 is a flowchart showing an electron beam exposure method by the electron beam exposure apparatus 1.

  First, in step S11, the electron beam exposure apparatus 1 drives the mask stage 123 to move the mask deflection range of each column cell 11 to the first pattern group 162 of each membrane region 161a to 161d.

  Next, in step S12, the electron beam exposure apparatus 1 reads the exposure condition of each shot of the exposure data stored in the buffer memory 23 in each column cell 11, and is included in the first pattern group 162 in each column cell 11. The exposure using the CP pattern 163 is repeated.

  Thereafter, in step S13, it is determined whether or not the exposure in the pattern group 162 is completed in all the column cells 11. If the exposure in all the column cells 11 has not been completed (NO), the determination in step S13 is repeated, and the completion of the exposure in all the column cells 11 is awaited.

  On the other hand, if it is determined in step S13 that the exposure in all the column cells 11 has been completed (YES), the process proceeds to step S14 to determine whether exposure of all shots included in the exposure data has been completed.

  If it is determined in step S14 that exposure of all shots has not been completed (NO), the process proceeds to step S15.

  In step S15, the mask stage 123 is driven to move the exposure mask 110, and the mask deflection range of each column cell 11 is adjusted to the next pattern group 162. Thereafter, the process proceeds to step S12.

  On the other hand, if it is determined in step S14 that exposure of all shots has been completed (YES), the exposure ends.

  As described above, in the electron beam exposure apparatus 1 of the present embodiment, the CP pattern 163 having a similar shape and a line width increasing by a certain step Δd is arranged side by side on the exposure mask 110. The CP pattern 163 to be used corresponds to Δw based on the amount of deviation Δw between the line width actually obtained in each column cell 11 and the designed line width of the CP pattern 163 used for exposure. Change only minutes.

  Thereby, even if the line width of the opening pattern of the CP pattern 163 of the exposure mask 110 varies in the in-plane direction, variation in the line width of the pattern between the column cells 11 can be prevented.

(Second Embodiment)
FIGS. 11A to 11C are diagrams showing an example of a change amount (jump vector) of the irradiation position of the electron beam EB on the exposure mask 110 according to the first embodiment, and FIG. It is a figure which shows an example of the operation state of each column cell 11 of the exposure apparatus 1. FIG.

  As shown in FIGS. 11A to 11C, in the exposure mask 110 according to the first embodiment, when the pattern line width deviation amount Δw is +2 nm, 0 nm, and −2 nm, the pattern having a line width of 14 nm is used. Consider a case where patterns having a line width of 25 nm are alternately exposed. In this case, the amount of change (jump vector) of the irradiation position of the electron beam EB on the exposure mask 110 as shown by the arrow is equal to the line even though the amount of change in the line width is the same as shown in the figure. It differs depending on the width shift amount Δw.

  In the electron beam exposure apparatus 1, as the jump vector increases, the voltage applied to the first electrostatic deflector 104 and the second electrostatic deflector 105 increases, and the waiting time until the position of the electron beam EB becomes constant (settling). Waiting time). Therefore, as in the case of FIGS. 11A to 11C, if the jump vector differs depending on the line width deviation amount Δw, the settling wait time in each shot is accumulated and the exposure process proceeds between the column cells 11. Change.

  Then, as shown in FIG. 12, there is a difference in the time until the exposure is completed in each column cell 11. The movement of the exposure mask 110 is performed after completion of the exposure process in the column cell 11 in which the progress of the exposure process is the slowest. Therefore, in the column cell 11 in which the exposure process is completed early, a wasteful waiting time is generated as indicated by reference numeral H, and the entire processing speed of the electron beam exposure apparatus 1 is reduced.

  Therefore, in the second embodiment, the arrangement of the CP mask 163 is changed to suppress the difference in settling time between the column cells 11.

  FIGS. 13A to 13C are views showing the arrangement of the CP pattern 163 of the exposure mask 110 according to the second embodiment.

  In the exposure mask 110 of this embodiment, as shown in FIGS. 13A to 13C, a CP pattern 163 having a similar shape is arranged so that the line width increases by a length Δd in the column direction. In the row direction, a CP pattern 163 having a similar shape is arranged so that the line width increases by a length Δd × n (where n is a natural number of 2 or more). Of the CP patterns 163 arranged as described above, the CP pattern 163 surrounded by the n-row region 170 surrounded by a thick line is used for exposure.

  For example, as shown in the figure, the line width of the CP pattern 163 is increased by Δd = 0.5 nm in the column direction, and the line width is increased by 4 nm (= 0.5 nm × 8) in the width direction. Deploy. In addition, it is assumed that a region 170 for eight continuous rows is used for exposure.

  Next, a deviation amount Δw between the finished line width and the designed line width is obtained for the CP pattern 163 having a predetermined line width in each column cell 11, and the region 170 is arranged in the column direction so as to cancel the deviation amount Δw of the line width. To cancel the variation in the line width of the CP pattern 163.

  For example, as shown in FIG. 13A, when the finished line width is 1.5 nm larger than the design value, that is, when Δw = + 1.5 nm, three rows (from the position of the region 170 in FIG. A region 170 shifted in a direction in which the line width decreases by 1.5 nm is used for exposure. In addition, as shown in FIG. 13C, when the finished line width is 2 nm smaller than the design value, that is, when Δw = −2.0 nm, four rows from the position of the region 170 in FIG. A region 170 shifted in the direction in which the line width increases by 2.0 nm) is used for exposure.

  As a result, the deviation Δw of the line width of the CP pattern 163 between the column cells 11 is canceled, and variations in the finished line width of the column cells 11 can be prevented.

  Further, in the present embodiment, as shown in FIGS. 13A to 13C, even if the region 170 is changed according to the line width deviation amount Δw, the jump vector only moves in parallel. The size does not change. Therefore, the difference in settling waiting time of the electron beam EB of each column cell 11 can be reduced, and generation of useless waiting time can be suppressed in each column cell 11.

(Modification of the second embodiment)
FIG. 14 is a view showing the arrangement of the CP pattern 163 of the exposure mask 110 according to a modification of the second embodiment.

  In this modification, as shown in FIG. 14, CP patterns 163 each having a similar shape and a line width increasing by a step Δd are arranged in the column direction in the line width order. Further, CP patterns 163 in which opening patterns having different shapes are formed are arranged in the row direction.

  In the CP pattern 163 arranged as described above, a region 170 for n rows surrounded by a thick line is used as a pattern for exposure.

  Here, a deviation amount Δw between the finished line width and the designed line width is obtained for the CP pattern 163 having a predetermined line width in each column cell 11, and the regions 170 are arranged by the amount corresponding to the deviation amount Δw of the line width. Shift in direction. Thereby, the variation in the line width of the CP pattern 163 can be canceled.

  Further, according to the present modification, the difference in jump vectors can be eliminated and various patterns can be handled.

  DESCRIPTION OF SYMBOLS 1 ... Electron beam exposure apparatus, 10 ... Electron beam column, 11 ... Column cell, 12 ... Wafer, 13 ... Wafer stage, 20 ... Control part, 21 ... Electron gun high voltage power supply, 22 ... Lens power supply, 23 ... Buffer memory, 24 DESCRIPTION OF SYMBOLS ... Stage drive controller, 25 ... Stage position sensor, 26 ... Integrated control system, 31 ... Column cell control part, 35 ... Pattern data code (PDC), 100 ... Exposure part, 101 ... Electron gun, 102 ... 1st electron lens, DESCRIPTION OF SYMBOLS 103 ... Beam shaping mask, 103a ... Rectangular aperture, 104 ... 1st electrostatic deflector, 105 ... 2nd electron lens, 106 ... 2nd electrostatic deflector, 107 ... 1st correction coil, 108 ... 3rd electromagnetic lens 109 ... second correction coil, 110 ... exposure mask, 111 ... fourth electromagnetic lens, 112 ... third electrostatic deflector, 113 ... fourth electrostatic deflector, 11 ... 5th electromagnetic lens, 115 ... shielding plate, 115a ... aperture, 116 ... first projection electromagnetic lens, 117 ... 3rd correction coil, 118 ... 4th correction coil, 119 ... 5th electrostatic deflector, 120 ... electromagnetic Deflector, 123 ... Mask stage, 130 ... Electron beam generator, 140 ... Mask deflector, 150 ... Substrate deflector, 160 ... Wafer (substrate), 160a ... Opening, 161a-161d ... Membrane region, 162 ... Pattern group 163 ... CP pattern, 164,165,166 ... opening pattern, 168 ... silicon nitride film (membrane), 169 ... silicon film, 202 ... electron gun control unit, 203 ... electron optical system control unit, 204 ... mask deflection control unit 205 ... Mask stage controller, 206 ... Blanking controller, 207 ... Substrate deflection controller, 211 ... Pattern data Processing section, 212 ... conversion table, 213 ... mask memory, 214 ... driving circuit.

Claims (5)

A plurality of column cells disposed above the sample and irradiating the sample in parallel with an electron beam; and
An exposure mask having a pattern group provided in a portion corresponding to each column cell, each of which has a similar shape and a plurality of patterns having different line widths arranged in the line width order;
Provided in each column cell, based on the amount of deviation between the design value of the line width of the pattern and the finished dimension of the pattern obtained in advance, the pattern used for exposure is the amount of deviation from the specified pattern. A pattern data processing unit for changing to a pattern with a different line width;
A mask deflection unit that deflects the electron beam to a pattern on the exposure mask selected by the pattern data processing unit ,
The patterns of the exposure mask are arranged side by side so that the line width increases by a length Δd in the column direction and the line width increases by a length Δd × n (where n is a natural number of 2 or more) in the row direction. electron beam exposure apparatus characterized by being.   2. The electron beam exposure apparatus according to claim 1, wherein each pattern of the exposure mask has a line width increased by a predetermined length in a column direction or a row direction. The pattern data processing unit selects a pattern to be used for exposure from patterns included in a continuous n-row region of the exposure mask, and the pattern obtained by measuring in advance with a design value of the line width of the pattern 2. The electron beam exposure apparatus according to claim 1 , wherein a region corresponding to consecutive n rows of the exposure mask is moved in the column direction in accordance with a deviation amount from the finished line width. An exposure mask used in an electron beam exposure apparatus that performs exposure in parallel by irradiating an electron beam from a plurality of column cells,
A thin wafer,
A plurality of patterns each provided in a portion corresponding to each column cell on the wafer, each having a similar shape and different line widths, arranged in order of line widths, and a pattern group ,
The patterns are arranged side by side so that the line width increases by a length Δd in the column direction and the line width increases by a length Δd × n (where n is a natural number of 2 or more) in the row direction. An exposure mask characterized by that . 5. The exposure mask according to claim 4 , wherein each pattern has a line width increased by a predetermined length in a column direction or a row direction.

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