JP5523727B2 - Infrared sensor using torsional vibration and infrared sensor using torsional vibration. - Google Patents

Description

The present invention relates to an infrared detection method using torsional vibration and an infrared sensor using torsional vibration that implements this method.
According to the present invention, a small and highly sensitive power-saving infrared sensor can be realized.

In general, infrared sensors can be classified into quantum sensors using photoelectric conduction, photovoltaic power, and the like, and thermal sensors using thermistors, bolometers, pyroelectrics, thermopiles, diodes, and the like.
The quantum sensor is based on the principle that electrons and holes in a semiconductor excited by infrared energy generate a change in conductivity and an electromotive force. Quantum sensors generally have high sensitivity. However, since the influence of excited electrons and holes due to heat is large, high sensitivity can be obtained only after cooling with liquid nitrogen or the like. A dedicated cooling device is required, and the structure of the sensor system tends to be large, complicated, and expensive. It is not suitable for miniaturization, which is important because it is widely used for general purposes.
The thermal sensor is a principle that utilizes changes in stress and electrical characteristics associated with a temperature rise of a substance due to infrared absorption. Since the thermal sensor operates at room temperature, a special cooling device is unnecessary, and there is an advantage that it is simple and inexpensive. In recent years, devices have been reported in which a sensor is made small in both size and heat capacity by applying a microfabrication technology of a semiconductor integrated circuit, and sensitivity and responsiveness are improved. However, compared with the quantum type, the sensitivity is low.
As described above, there are many types of mid-far infrared sensors, but there is no uncooled and highly sensitive sensor. For example, when performing analysis by infrared spectroscopy, since there is no small sensor that can be carried, the application range is limited. The biggest reason why FT-IR (Fourier Transform Infrared Spectroscopy) is used for infrared spectrum measurement is that there is no highly sensitive sensor. FT-IR is excellent as a research device, but it is not suitable for miniaturization because it requires a moving mirror.
Among the technological developments, attempts have been made to make the thermal infrared sensor a vibration type. When the vibration type is used, the sensor output is not an analog value, and an interface circuit such as an AD conversion circuit is not necessarily required, which has an advantage that the sensor can be further reduced.

Techniques for realizing an uncooled thermal infrared sensor in a vibration type are disclosed in, for example, Patent Documents 1 to 3.
The device of Patent Document 1 utilizes vibrations of a beam whose ends are fixed that are displaced perpendicularly to the length direction. While the temperature rise accompanying infrared absorption promotes thermal expansion of the beam, the beam cannot extend because both ends are fixed. For this reason, stress is generated inside the beam, which becomes the axial force of the beam, and this is the principle of changing the vibration characteristics. Transmits thermal stress caused by material properties directly to the beam. The resonance frequency and Q value did not necessarily change greatly.
The device of Patent Document 2 uses a vibrating body as a gate of a transistor and is arranged on a channel sandwiched between a drain and a source. It is an attempt to combine with the principle of a transistor in order to increase the sensitivity of the vibration infrared sensor. It also shows adjacent reference sensors.
In the device of Patent Document 3, for example, the thermal stress generated inside the beam of the sensor shown in Patent Document 1 does not work as an axial force, and is displaced in a direction perpendicular to the length direction of the beam and escapes. Is an attempt to solve the problem. Buckling is likely to occur in an elongated beam designed to reduce heat conduction and increase the temperature rise of the light receiving part. Also related to sensor sensitivity and linearity of output signal. By using a cantilever beam, heat conduction to the substrate is reduced, and heat storage efficiency is increased. In order to increase the efficiency of infrared absorption, a structure in which an absorption layer is greatly extended, for example, a silicon oxide film and a nitride film are stacked. The principle is that the temperature change of the cantilever changes the Young's modulus of the material and the resonance frequency change of the vibrator. Specific examples include titanium nitride.
In Patent Document 4, a structure using two kinds of substances is prepared, and a deflection is generated by a temperature rise caused by absorbed infrared rays and a difference in thermal expansion coefficient of the material, and this deflection is detected as a change in electric capacity. Sensors have been proposed.
Non-Patent Document 1 introduces that a sensor using a mechanical deformation of a two-layer structure has been tried with a combination of silicon carbide / aluminum and silicon carbide / gold. The expected performance as a sensor has not been reached.
Non-Patent Document 2 relates to a micromirror using torsional vibration. When a torsion bar made of a thin film to which tension is applied is used, the characteristics change greatly with changes in temperature. Rather, the literature is a research presentation that considers this temperature characteristic as a problem. It has been found that the spring constant is hard because the torsion bar is deformed in a direction perpendicular to the axis.
By utilizing this phenomenon, a torsional vibrator having high sensitivity to temperature changes can be realized. This can be used for an infrared sensor.

"Vibration type infrared sensor, vibration type infrared imager, and infrared detection method" Publication number: JP-A-7-83756 Publication date: March 31, 1995 Applicant: Semiconductor Research Promotion Association "Vibration type infrared sensor and manufacturing method thereof" Publication number: JP-A-10-281862 Publication date: October 23, 1998 Applicant: Yokogawa Electric Corporation "Infrared sensor and infrared imaging device" Publication number: JP-A-2005-43148 Publication date: February 17, 2005 Applicant: Toshiba Corporation “Infrared imager using room temperature capacitance sensor” US Pat. No. 6,498,347 Publication date: December 24, 2002 Applicant: Sarnoff Corporation (Princeton, NJ) Supervision of “Next Generation Sensor Handbook”: Aikoro, Baifukan Co., Ltd. (issued on July 8, 2008, first edition), 2.3.5 Thermal Infrared Sensor M. Sasaki, M. Fujishima, K. Hane, H. Miura, "Stabilization of Temperature Characteristics of Micromirror for Low-Voltage Driving Using Thin Film Torsion Bar of TensilePoly-Si", Program of 2008 IEEE / LEOS Int. Conf. Optical MEMS andNanophotonics, P12, (2008.8.813, Freiburg, Germany) pp.120-121.

No sensor has been realized that combines the high sensitivity of a quantum infrared sensor and the room temperature operation of a thermal infrared sensor. The vibration-type infrared sensor that has been proposed so far utilizes vibration that is displaced perpendicularly to the length direction of the beam, whether it is a cantilever beam or a cantilever beam. Although the resonance frequency and the Q value change due to the temperature rise, the degree of the change is not necessarily large. Therefore, there is a problem that it is difficult to increase the sensitivity of the sensor.
Vibration spectra unique to various molecules appear in the mid-infrared region. If a more sensitive infrared sensor can be obtained, the application range can be expanded.
It is an object of the present invention to further increase the sensitivity of a vibration type sensor by realizing and using a dynamic system, in which a temperature rise easily causes a large change in mechanical characteristics such as a resonance frequency, with a small structure. In addition, an object of the present invention is to realize an array type sensor arranged in a one-dimensional or two-dimensional manner with thermal insulation between sensor elements together with a high fill factor.

The present invention introduces a new torsional vibration to an infrared sensor, and the deformation of the vibrator caused by the temperature rise due to infrared absorption utilizes a dynamical system that changes the resonance frequency. An infrared sensor using the detection method and the torsional vibration in which the detection method is implemented is realized.
The infrared sensor using the torsional vibration of the present invention uses a torsion bar that performs torsional vibration with tension as an infrared sensor, so that the vibrator, including the spring part, warps due to temperature rise, and the resonance frequency etc. changes greatly. This makes it possible to increase the sensitivity of the sensor.
In addition, according to the present invention, there is obtained an infrared detection method characterized in that the vibrator supported by the torsion bar detects a change in the mechanical resonance frequency or the Q value which is indicated as the temperature rises due to infrared absorption.

According to the present invention, there is obtained a torsional vibration type infrared sensor characterized in that a polycrystalline silicon film or a crystalline silicon film having a tensile stress is used for a torsion bar. When amorphous silicon is formed into a film by LPCVD (Low Pressure Chemical Vapor Deposition) method or the like and crystallized by annealing, it is possible to obtain a large tensile film stress due to generation of a crystal lattice or loss of hydrogen atoms. Since conductivity can be imparted by doping and a silicon microfabrication process can be easily applied, a device can be stably manufactured by an established process.
According to the present invention, it is possible to realize a differential sensor characterized by having a plurality (for example, two) of infrared sensors and comparing with a reference signal obtained from one sensor.
The actual transducer can be made into a ribbon shape and is suitable for arraying. It is possible to prevent infrared energy from entering one of the sensors. A reflective film may be prepared for the sensor itself, or infrared light itself may be prevented from entering depending on the arrangement. Noise and the like can be monitored by one sensor, and only the influence caused by infrared irradiation can be measured by differential.
Further, according to the present invention, an array type sensor in which a plurality of infrared sensors are arranged can be realized. An actual vibrator can be formed in a ribbon shape and is suitable for arraying, unlike a thermopile element prepared by the same semiconductor microfabrication technology. The thermopile element requires a space for obtaining a temperature distribution and a device area because of the principle of adding signals by connecting a hot junction and a cold junction in series. An area of 1 mm ² or more is required per element. On the other hand, a sensor using torsional vibration can also prepare a vibrator with an area of ˜200 × 10 μm ² . For example, when dispersive spectroscopy using a diffraction grating is performed, lights having different wavelengths are focused at different positions. It is possible to realize a spectroscopic system in which each arrayed element corresponds to a wavelength.

According to the present invention, a small and highly sensitive power-saving infrared sensor can be realized. Since the infrared sensor using the torsional vibration of the present invention can use electrostatic drive to excite the torsional vibration, the sensor can be driven with power saving. Both high sensitivity and power saving are advantageous characteristics for realizing a handy and movable sensor system. Combining with spectroscopic elements such as prisms and diffraction gratings leads to miniaturization of the spectroscopic system.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. The drawing is an example, and the material, shape, arrangement, etc. of the torsion bar are not limited.
FIG. 1 is an explanatory view showing an embodiment of an infrared sensor in which an infrared detection method using torsional vibration of the present invention is implemented.
FIG. 1A is a diagram showing a schematic configuration of an infrared sensor using the torsional vibration of the present invention, and FIG. 1B is a cross-sectional view of the infrared sensor using the torsional vibration of the present invention along a torsionally vibrating beam. The low temperature state is shown, and (c) is a diagram highlighting the deformation in the high temperature state of the cross-sectional view along the torsionally vibrating beam.
In FIG. 1, 1 is an incident infrared ray. Reference numeral 2 denotes a torsion bar (torsion bar spring) fixed at both ends, and reference numeral 21 denotes two fixed ends of the torsion bar 2. 3 indicates the displacement of the torsion bar from a straight line connecting the two fixed ends 21 of the torsion bar 2, 4 indicates the tension applied to the torsion bar, and 5 indicates the rotational displacement generated in the torsion bar.

Reference numeral 6 denotes a vibrating body (infrared light receiving portion) of the torsion bar 2, 6a denotes an upper layer (may be a plurality of layers) of the vibrating body, and 6b denotes a lower layer (may be a plurality of layers) of the vibrating body.
Reference numeral 8 denotes a lower electrode. Reference numeral 8a denotes a drive electrode for the vibrating body 6, and 8b denotes a detection electrode for measuring the frequency characteristics of the vibrating body 6 by an electrical impedance or the like. The lower electrode 8 is installed at a position shifted from the central axis of the torsion bar 2 so as to generate a force for urging the vibrating body 6 to rotate.
The drive electrode 8a and the detection electrode 8b are examples, and different layouts may be used. The same electrode can also be obtained by time division. Reference numeral 9 denotes an infrared sensor substrate.
The torsion bar 2 and the vibrating body 6 are mechanically supported by the fixed end 21 of the torsion bar 2 and are also electrically connected to the outside, and a driving voltage is applied between the driving electrode 8a.

In the infrared sensor of the present invention configured as described above, by applying a driving voltage between the vibrating body 6 and the driving electrode 8a, the vibrating body 6 is attracted and driven by generating a rotational motion.
The vibrating body 6 is configured, for example, in a multilayer structure so that deflection occurs due to a temperature rise caused by the incident infrared ray 1.
When the upper layer 6a of the vibrating body 6 has a larger coefficient of thermal expansion than the lower layer 6b, the upper layer tends to extend more, and thus a convex deflection occurs upward. Since this produces the change from FIG. 1 (b) to FIG. 1 (c), a displacement 3 is generated in which the vibrating body 6 protrudes outward from the center of rotation, so that it deviates from the straight line connecting the two fixed ends 21 straight. Transforms into
As a result, the relationship between the tension 4 acting along the torsion bar 2 and the displacement 5 due to the torsional vibration deviates from the orthogonal relationship as shown in FIG. 1B, and becomes a relationship as shown in FIG. Change.
As a result, the torsion spring constant of the torsion bar 2 increases, and mechanical characteristics such as the resonance frequency are changed.

When the sensor resonates, a change occurs in the electrical impedance between the vibrating body 6 and the detection electrode 8b. By detecting this, it becomes possible to detect the resonance frequency and the Q value.
As an example of sensitivity characteristic data when the torsion bar is used as an infrared sensor, FIG. 6 shows data of a vibrating body (micromirror) having a torsion bar to which tension is applied using a silicon nitride film and a chromium / gold film. .
The vertical axis in FIG. 6 is the tilt angle of the rotation angle, and the horizontal axis is the temperature. The data in FIG. 6 shows that the rotation angle decreases with increasing temperature. This is due to an increase in the torsion spring constant and corresponds to an increase in the resonance frequency.
The infrared sensor using the torsional vibration of the present invention can produce a great change because when the tension is orthogonal to the torsional motion of the spring, little mechanical energy is required and the spring constant is small. On the other hand, if the orthogonal relationship is broken, energy is required for the torsional motion that proceeds while resisting a component having tension, and the torsion spring constant of the torsion bar is increased. The principle is that a large change in the resonance frequency can be obtained by preparing a tension having a large value and changing this direction even slightly.

It does not add destructive stress to the structure. The effect of tension is increased when the size of the vibrator is reduced. It can be realized by a micro / nano mechanical structure and is suitable for miniaturization of sensors. In addition to the temperature characteristics of materials, the introduction of tension is a new factor in device design. In the torsional vibration, the displacement of the vibrator different from the vibration direction can be a system that generates a large change in the spring constant with respect to the torsional vibration in relation to the tension.
Note that the shape of the infrared sensor in the low temperature state is not limited to the state shown in FIG. 1B, and a design that further deforms when the high temperature state is changed from the state in FIG. A design approaching the state of FIG. 1B from the state of c) is also possible.

FIG. 2 is an explanatory view showing another embodiment of an infrared sensor in which the infrared detection method using torsional vibration of the present invention is implemented.
In FIG. 2, the same parts as those in FIG.
The embodiment shown in FIG. 2 has a multi-layer structure for the torsion bar 2 as a whole, and has a configuration in which the vibrator 6 is not specially provided as shown in FIG.
In FIG. 2, it can be said that the vibrating body 6 has a continuous structure with the torsion bar because the upper layer 6 a of the vibrating body 6 extends to the end of the torsion bar 2. As for the relationship between the tension 4 and the displacement 5 accompanying torsional vibration, the same effect as in FIG. 1 can be obtained. Note that the shape of the infrared sensor in the low temperature state is not limited to the state shown in FIG. 2A, and a design that is further deformed when the high temperature state is changed from the state in FIG. A design approaching the state of FIG. 2A from the state of b) is also possible.

FIG. 3 is an explanatory view showing another embodiment of an infrared sensor that implements the infrared detection method using the torsional vibration of the present invention.
The embodiment of FIG. 3 is a configuration explanatory diagram of a sensor in which two infrared sensors similar to those shown in FIG.
In FIG. 3, the same parts as those of FIG.
In FIG. 3, reference numeral 10 denotes an infrared sensor having the same configuration as that shown in FIG. Reference numeral 13 denotes a reference sensor having the same configuration as that shown in FIG. Reference numeral 7a denotes an antireflection layer that allows the vibrating body to absorb infrared rays, and reference numeral 7b denotes a reflecting layer that prevents the vibrating body from absorbing infrared rays.
The reference sensor 13 is used for monitoring the influence of noise or the like.
By taking the difference from the other sensor 10 on which the infrared ray to be measured is incident, only the signal provided by the incident infrared ray 1 can be obtained, and a differential sensor can be realized as a whole. It is effective to add an antireflection layer 7a that facilitates absorption of infrared energy to the measurement sensor 10. The reference sensor 13 is provided with a reflective layer 7b to make it difficult to absorb infrared energy. In addition, unlike the illustration of FIG. 3, it is also possible to assemble an optical system so that infrared light itself does not enter the reference sensor after arranging two in the transducer length direction. The shapes of the drive electrode 8a and the detection electrode 8b are exemplary. A common driving electrode may be used.

FIG. 4 is an explanatory view showing another embodiment of an infrared sensor in which the infrared detection method using torsional vibration of the present invention is implemented.
In FIG. 4, the same parts as those in FIG.
In FIG. 4, reference numeral 14 denotes an array type infrared sensor in which a number of the sensors of FIG.
The embodiment of FIG. 4 is a configuration explanatory diagram of an array type infrared sensor 14 in which a number of the sensors of FIG. The sensor 10 has a ribbon shape, and can occupy an area occupied by one sensor element and can be arranged with a high fill factor when arrayed. It is possible to detect infrared rays by minimizing “kicking” in which incident light does not enter the sensor region. The shapes of the drive electrode 8a and the detection electrode 8b are exemplary. A common driving electrode may be used. This one-dimensional array can be further converted into a two-dimensional array by arraying in the transducer length direction. A two-dimensional array sensor can be used as an image sensor.

FIG. 5 is an explanatory view showing another embodiment of an infrared sensor in which the infrared detection method using the torsional vibration of the present invention is implemented.
In FIG. 5, the same parts as those in FIG.
In FIG. 5, 15 is a diffraction grating, 16 is a lens, and 17 is diffracted light.
The embodiment of FIG. 5 shows an optical system that realizes a spectroscopic system by combining the sensor 14 in the form of a one-dimensional array shown in FIG. 4 with a diffraction grating. Incident infrared light 1 enters the diffraction grating 15. The diffracted light 17 that has passed through the lens 16 is collected on the infrared sensor 14. A condensing position changes with wavelengths, and each wavelength and each sensor 10 respond | correspond. If the diffraction grating has a condensing function, 15 and 16 can be realized by one element. A prism may be used instead of the diffraction grating 15.

As is apparent from the above description, according to the present invention, an uncooled, small and more sensitive infrared sensor can be realized. Electrostatic drive can be used to excite torsional vibrations. The sensor can be driven with low power consumption. Both high sensitivity and power saving are advantageous characteristics for realizing a handy and movable sensor system. Combining with spectroscopic elements such as prisms and diffraction gratings leads to miniaturization of the spectroscopic system.

Measuring the temperature distribution of machines and structures can be used to detect abnormalities. Vibration spectra unique to various molecules appear in the mid-infrared region. Infrared spectroscopy can be used to check for the presence of specific substances and to measure concentrations. Environmental monitoring such as CO2 gas, energy saving system that combines room ventilation and air conditioning of only necessary amount, inspection of contamination of foods, checking of possession of drugs by so-called odor detection, trace gases generated from human body (H2, NO, NH3 There is non-invasive medical care by measurement. Both are useful technologies because they enable in-situ measurement with a small sensor system.

It is explanatory drawing which showed one Example of the infrared sensor which implemented the infrared detection method using the torsional vibration of this invention. (a) is a diagram showing a schematic configuration of an infrared sensor using the torsional vibration of the present invention, (b) shows a low-temperature state of a cross-sectional view along the torsionally vibrating beam of the infrared sensor of the present invention. (C) is the figure which highlighted and displayed the deformation | transformation of the high temperature state of sectional drawing along the beam which carries out a torsional vibration. It is explanatory drawing which showed the other Example of the infrared sensor which implemented the detection method of the infrared rays using the torsional vibration of this invention. (A) is a low temperature state, (b) is an example of a sensor shape in a high temperature state. The deformation is highlighted. FIG. 2 is a configuration explanatory diagram of a sensor in which two infrared sensors similar to those shown in FIG. 1 are arranged on a substrate 9. FIG. 2 is a configuration explanatory diagram of an array type infrared sensor in which a number of sensors of FIG. 1 are arranged one-dimensionally on a substrate. FIG. 5 shows an optical system that realizes a spectroscopic system by combining the one-dimensional array sensor shown in FIG. 4 with a diffraction grating. It is an example of a sensitivity characteristic when a vibrating body (micromirror) having a torsion bar to which tension is applied is viewed as a temperature sensor.

1 ... Incident infrared ray 2 ... Torsion bar (torsion bar spring)
3 ... Displacement of torsion bar from straight line connecting two fixed ends 4 ... Tension 5 ... Rotational displacement generated in torsion bar 6 ... Vibrating body (infrared light receiving part)
6a: Upper layer of vibrator (multiple layers may be used)
6b: Lower layer of vibrator (multiple layers may be used)
7a: Antireflection layer 7b for allowing infrared rays to be absorbed by vibrating body 7b: Reflecting layer 8 for preventing infrared rays from being absorbed by vibrating body ... Lower electrode 8a ... Electrode for driving vibrator 8b ... Electrode 9 for vibrator detection ... Substrate 10 ... Sensor 11 ... Infrared sensor 12 in low temperature state ... Infrared sensor 13 in high temperature state ... Sensor 14 for reference ... Array type infrared ray Sensor 15 ... Diffraction grating 16 ... Lens 17 ... Diffraction light 21 ... Fixed end

Claims (7)

Infrared light is detected by detecting a change in mechanical resonance frequency or Q value indicated by a multi-layered vibrator supported by a torsion bar and generating deflection as the temperature rises due to infrared absorption. Infrared detection method using torsional vibration. Supported by a torsion bar with both ends fixed and tension applied,
Infrared light using torsional vibration, characterized by detecting infrared light by detecting a change in mechanical resonance frequency or Q value, which is indicated by a multilayered vibrator that generates deflection as the temperature rises due to infrared absorption. Detection method. A multi-layer vibrator in which deflection occurs as the temperature rises due to infrared absorption supported by a torsion bar;
Means for irradiating the vibrator with infrared rays;
Drive means for twisting the torsion bar;
Detecting means for measuring the vibration characteristics of the vibrator by electrical impedance or the like,
The vibrator shows as the temperature rises due to infrared absorption.
An infrared sensor using torsional vibration, wherein infrared rays are detected by detecting a change in mechanical resonance frequency or Q value. A multi-layered vibrator in which deflection occurs as the temperature rises due to infrared absorption supported by a torsion bar to which both ends are fixed and tension is applied;
Means for irradiating the vibrator with infrared rays;
A drive electrode for applying torque to the torsion bar;
A detection electrode for measuring the vibration characteristics of the vibrator by electrical impedance,
Driving means for attracting the vibrating body by applying a driving voltage between the vibrating body and the driving electrode and generating a rotational movement;
The vibrator shows as the temperature rises due to infrared absorption.
An infrared sensor using torsional vibration, wherein infrared rays are detected by detecting a change in mechanical resonance frequency or Q value. 5. The infrared sensor using torsional vibration according to claim 3, wherein a multi-layered polycrystalline silicon film or a crystalline silicon film is used for the vibrator. 5. A torsional vibration characterized by using a plurality of infrared sensors according to claim 3 and monitoring the influence of noise or the like by comparing a signal obtained by a sensor not irradiated with infrared rays as a reference signal. Infrared sensor using An array type infrared sensor using torsional vibration, wherein a plurality of infrared sensors according to claim 3 are used.

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