JP5496329B2 - ホールセンサ素子および磁界を測定する方法 - Google Patents

ホールセンサ素子および磁界を測定する方法 Download PDF

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Publication number
JP5496329B2
JP5496329B2 JP2012518052A JP2012518052A JP5496329B2 JP 5496329 B2 JP5496329 B2 JP 5496329B2 JP 2012518052 A JP2012518052 A JP 2012518052A JP 2012518052 A JP2012518052 A JP 2012518052A JP 5496329 B2 JP5496329 B2 JP 5496329B2
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Prior art keywords
active region
contact electrode
connection line
upper contact
hall sensor
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Expired - Fee Related
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JP2012518052A
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Japanese (ja)
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JP2012531757A5 (enExample
JP2012531757A (ja
Inventor
ヘルヴィヒ ヴォルフガング
ティルス ファレンティン
エーバーハート フリーデマン
リューベナッケ シュテファン
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Robert Bosch GmbH
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Robert Bosch GmbH
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • G01R33/072—Constructional adaptation of the sensor to specific applications
    • G01R33/075—Hall devices configured for spinning current measurements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
JP2012518052A 2009-06-30 2010-04-30 ホールセンサ素子および磁界を測定する方法 Expired - Fee Related JP5496329B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009027338.7 2009-06-30
DE102009027338A DE102009027338A1 (de) 2009-06-30 2009-06-30 Hall-Sensorelement und Verfahren zur Messung eines Magnetfelds
PCT/EP2010/055904 WO2011000601A1 (de) 2009-06-30 2010-04-30 Hall-sensorelement und verfahren zur messung eines magnetfelds

Publications (3)

Publication Number Publication Date
JP2012531757A JP2012531757A (ja) 2012-12-10
JP2012531757A5 JP2012531757A5 (enExample) 2014-02-27
JP5496329B2 true JP5496329B2 (ja) 2014-05-21

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Family Applications (1)

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JP2012518052A Expired - Fee Related JP5496329B2 (ja) 2009-06-30 2010-04-30 ホールセンサ素子および磁界を測定する方法

Country Status (5)

Country Link
US (1) US9063187B2 (enExample)
EP (1) EP2449394B1 (enExample)
JP (1) JP5496329B2 (enExample)
DE (1) DE102009027338A1 (enExample)
WO (1) WO2011000601A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5815986B2 (ja) * 2010-07-05 2015-11-17 セイコーインスツル株式会社 ホールセンサ
DE102011017096A1 (de) 2011-04-14 2012-10-18 Austriamicrosystems Ag Hall-Sensor-Halbleiterbauelement und Verfahren zum Betrieb des Hall-Sensor-Halbleiterbauelementes
US9103868B2 (en) 2011-09-15 2015-08-11 Infineon Technologies Ag Vertical hall sensors
DE102012216388A1 (de) 2011-09-16 2013-03-21 Infineon Technologies Ag Hall-sensoren mit erfassungsknoten mit signaleinprägung
US9484525B2 (en) * 2012-05-15 2016-11-01 Infineon Technologies Ag Hall effect device
US9018948B2 (en) 2012-07-26 2015-04-28 Infineon Technologies Ag Hall sensors and sensing methods
US9170307B2 (en) 2012-09-26 2015-10-27 Infineon Technologies Ag Hall sensors and sensing methods
US9164155B2 (en) 2013-01-29 2015-10-20 Infineon Technologies Ag Systems and methods for offset reduction in sensor devices and systems
US9252354B2 (en) 2013-01-29 2016-02-02 Infineon Technologies Ag Vertical hall device with highly conductive opposite face node for electrically connecting first and second hall effect regions
DE102013209514A1 (de) * 2013-05-22 2014-11-27 Micronas Gmbh Dreidimensionaler Hallsensor zum Detektieren eines räumlichen Magnetfeldes
US9605983B2 (en) 2014-06-09 2017-03-28 Infineon Technologies Ag Sensor device and sensor arrangement
US9823168B2 (en) 2014-06-27 2017-11-21 Infineon Technologies Ag Auto tire localization systems and methods utilizing a TPMS angular position index
EP2966462B1 (en) * 2014-07-11 2022-04-20 Senis AG Vertical hall device
US10103320B2 (en) * 2016-05-04 2018-10-16 Tdk-Micronas Gmbh Component with reduced stress forces in the substrate
US10693057B2 (en) 2016-05-04 2020-06-23 Tdk-Micronas Gmbh Sensor component with cap over trench and sensor elements
US10534045B2 (en) * 2017-09-20 2020-01-14 Texas Instruments Incorporated Vertical hall-effect sensor for detecting two-dimensional in-plane magnetic fields
CN107966669B (zh) * 2017-12-19 2019-11-08 大连理工大学 适用于高温工作环境的半导体三维霍尔传感器及其制作方法
WO2019219941A1 (en) * 2018-05-18 2019-11-21 Lfoundry S.R.L. Vertical hall elements having reduced offset and method of manufacturing thereof
US10424616B1 (en) * 2018-06-20 2019-09-24 Globalfoundries Singapore Pte. Ltd. Integrated circuit devices including vertical and lateral hall elements, and methods for fabricating the same
JP7527287B2 (ja) * 2018-11-21 2024-08-02 エルファウンドリー エッセ．エッレ．エッレ ホール集積回路およびウェハ積層を用いたホール集積回路の対応する製造方法
DE102018009110B4 (de) * 2018-11-21 2025-04-03 Tdk-Micronas Gmbh SOI-Halbleiterstruktur und Verfahren zur Herstellung einer SOI-Halbleiterstruktur
DE102019000165B4 (de) * 2019-01-14 2024-06-27 Tdk-Micronas Gmbh Halbleitersensorstruktur
CN114096865B (zh) * 2019-07-08 2025-04-29 拉芳德利责任有限公司 霍尔集成式传感器和对应的制造工艺
US20250251427A1 (en) * 2024-02-07 2025-08-07 Semiconductor Components Industries, Llc Integrated multi-component hall effect sensor

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH669068A5 (de) * 1986-04-29 1989-02-15 Landis & Gyr Ag Integrierbares hallelement.
JPH01251763A (ja) * 1988-03-31 1989-10-06 Res Dev Corp Of Japan 縦型ホール素子と集積化磁気センサ
JPH02192781A (ja) * 1989-01-20 1990-07-30 Mitsubishi Electric Corp ホール素子および磁気センサシステム
US5572058A (en) * 1995-07-17 1996-11-05 Honeywell Inc. Hall effect device formed in an epitaxial layer of silicon for sensing magnetic fields parallel to the epitaxial layer
DE59912726D1 (de) * 1998-03-30 2005-12-08 Sentron Ag Zug Magnetfeldsensor
JP2006147710A (ja) * 2004-11-17 2006-06-08 Denso Corp 縦型ホール素子
JP2006210731A (ja) 2005-01-28 2006-08-10 Denso Corp ホール素子およびその製造方法
JP4784186B2 (ja) * 2005-07-19 2011-10-05 株式会社デンソー 縦型ホール素子およびその磁気検出感度調整方法
DE102006017910A1 (de) 2006-04-18 2007-10-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vertikales Hall-Sensorelement
JP4940965B2 (ja) 2007-01-29 2012-05-30 株式会社デンソー 回転センサ及び回転センサ装置
US7782050B2 (en) * 2008-04-11 2010-08-24 Infineon Technologies Ag Hall effect device and method
US8159219B2 (en) * 2008-10-20 2012-04-17 University Of North Carolina At Charlotte MEMS 2D and 3D magnetic field sensors and associated manufacturing method
US8093891B2 (en) * 2009-03-02 2012-01-10 Robert Bosch Gmbh Vertical Hall Effect sensor

Also Published As

Publication number Publication date
US20120169329A1 (en) 2012-07-05
JP2012531757A (ja) 2012-12-10
EP2449394A1 (de) 2012-05-09
WO2011000601A1 (de) 2011-01-06
US9063187B2 (en) 2015-06-23
EP2449394B1 (de) 2013-08-21
DE102009027338A1 (de) 2011-01-05

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