JP5479180B2 - Mounting table - Google Patents

Description

  The present invention relates to a substrate mounting table provided in a substrate processing apparatus.

  A substrate processing apparatus that performs a predetermined process using plasma on a wafer as a substrate, for example, an etching process or a film forming process, includes a processing chamber that contains a wafer and generates plasma therein, and is disposed in the processing chamber. And a mounting table on which the wafer is mounted. In this substrate processing apparatus, in order to maintain a wafer heated by plasma at a desired temperature, the mounting table is provided with a temperature control mechanism to adjust the temperature of the mounted wafer. This temperature control mechanism has, for example, a medium flow path disposed in a mounting table, and the medium flow path absorbs heat of a wafer mounted by a low-temperature medium flowing inside (for example, Patent Document 1). reference.).

  By the way, in recent years, it has been studied to etch a plurality of layers by one etching process from the viewpoint of improving processing efficiency in a wafer having a plurality of layers formed on the surface. In this one etching process, each etching target layer is etched by changing the temperature of the wafer according to each etching target layer without changing the processing gas supplied into the processing chamber or the pressure in the processing chamber.

Japanese Patent Laid-Open No. 9-213781

  However, in the conventional mounting table, the thickness of each part is formed large from the viewpoint of securing rigidity, and the mass is large. Therefore, even if a high-temperature medium is supplied to the medium flow path, the amount of heat absorbed from the medium to the mounting table is large, so that the temperature rise of the wafer is delayed. Further, even if a low temperature medium is supplied to the medium flow path, the amount of heat absorbed from the mounting table to the medium is large, so that the temperature drop of the wafer is delayed.

  Here, in order to promote the temperature change of the wafer without changing the thickness of each part, for example, the side of the mounting table that contacts the wafer is made of a material having high thermal conductivity, and the side that does not contact the wafer is If the material is made of a material having low thermal conductivity, the structure of the mounting table becomes complicated, and further, the internal stress of the mounting table increases due to the difference in the coefficient of thermal expansion, which may reduce the durability of the mounting table.

  An object of the present invention is to provide a substrate mounting table capable of promoting a temperature change of a substrate without complicating the configuration.

In order to achieve the above object, the mounting table according to claim 1 is a mounting table having a medium flow path through which a medium having a predetermined temperature flows and on which a substrate is mounted . section perpendicular the medium channel is rectangular, of the inner surface of the medium flow path, the farthest side from the placement to substrates, wherein in each of the two surfaces adjacent to the farthest side Approximately half of the farthest surface side is covered with a heat conduction inhibiting member that is in direct contact with the medium flowing through the medium flow path .

The mounting table according to claim 2 is the mounting table according to claim 1 , wherein a protruding shape that protrudes into the medium flow path from a recent surface from the previously placed substrate among the inner surfaces of the medium flow path. It is characterized by having a thing.

Mounting table according to claim 3, wherein, in the table of claim 2 Symbol placement, the protruding objects is characterized by comprising a fin extending along the flow of the medium in the medium flow path.

The mounting table according to claim 4 is the mounting table according to any one of claims 1 to 3 , wherein the thickness of the heat conduction inhibiting member is 1 mm to 2 mm.

The mounting table according to claim 5 is the mounting table according to any one of claims 1 to 4 , wherein the heat conduction-inhibiting member is made of a low heat conductive material.

The mounting table according to claim 6 is the mounting table according to claim 5 , wherein the low thermal conductive material is a resin.

Mounting table of claim 7, wherein, in the mounting table according to any one of claims 1 to 4, wherein the heat conduction inhibiting member is characterized by comprising a heat insulating material.

The mounting table according to claim 8 is the mounting table according to claim 7 , wherein the heat insulating material is porous ceramics.

    According to the present invention, since the surface far from the placed substrate among the inner surfaces of the medium flow path inside the placing table is covered with the heat conduction inhibiting member, the portion far from the placed substrate in the placing table. (Hereinafter, simply referred to as “the far portion”) can be prevented from being absorbed in the far portion without being composed of a material having low thermal conductivity, and the heat in the far portion can be absorbed into the medium. Therefore, a portion near the substrate on the mounting table (hereinafter simply referred to as “near portion”) can actively absorb the heat of the medium, and the medium actively absorbs the heat of the vicinity. Can be absorbed. As a result, the temperature change of the substrate can be promoted without complicating the configuration of the mounting table.

It is a figure which shows schematically the structure of the substrate processing apparatus provided with the mounting base which concerns on the 1st Embodiment of this invention. It is an expanded sectional view of the medium flow path provided in the susceptor in FIG. 3 is a graph schematically showing a temperature change of a susceptor when a high-temperature temperature adjusting medium is supplied to the medium flow path of FIG. 2. FIG. 4 is an enlarged cross-sectional view showing a modification of the medium flow path of FIG. 2, FIG. 4 (A) shows a first modification, and FIG. 4 (B) shows a second modification. It is an expanded sectional view of a medium channel provided in a susceptor as a mounting table according to a second embodiment of the present invention. 6 is a graph schematically showing a temperature change of a susceptor when a high-temperature temperature adjusting medium is supplied to the medium flow path of FIG. 5.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  First, the mounting table according to the first embodiment of the present invention will be described.

  FIG. 1 is a diagram schematically showing a configuration of a substrate processing apparatus including a mounting table according to the present embodiment. This substrate processing apparatus performs a plasma etching process on a semiconductor device wafer (hereinafter simply referred to as “wafer”) as a substrate.

  In FIG. 1, a substrate processing apparatus 10 has, for example, a chamber 11 for accommodating a wafer W having a diameter of 300 m, and the chamber 11 is made of a metal on which a wafer W for semiconductor devices is placed, for example, aluminum. A trapezoidal susceptor 12 (mounting table) is disposed. In the substrate processing apparatus 10, a side exhaust path 13 is formed by the inner side wall of the chamber 11 and the side surface of the susceptor 12. An exhaust plate 14 is disposed in the middle of the side exhaust path 13.

  The exhaust plate 14 is a plate-like member having a large number of through holes, and functions as a partition plate that partitions the interior of the chamber 11 into an upper part and a lower part. Plasma is generated in an upper part (hereinafter referred to as “processing chamber”) 15 inside the chamber 11 partitioned by the exhaust plate 14 as will be described later. Further, an exhaust pipe 17 that exhausts gas inside the chamber 11 is connected to a lower portion 16 (hereinafter referred to as “exhaust chamber (manifold)”) inside the chamber 11. The exhaust plate 14 captures or reflects the plasma generated in the processing chamber 15 to prevent leakage to the manifold 16.

  TMP (Turbo Molecular Pump) and DP (Dry Pump) (both not shown) are connected to the exhaust pipe 17, and these pumps evacuate the chamber 11 to reduce the pressure. The pressure inside the chamber 11 is controlled by an APC valve (not shown).

  A first high-frequency power source 18 is connected to the susceptor 12 inside the chamber 11 via a first matching device 19, and a second high-frequency power source 20 is connected via a second matching device 21. One high frequency power supply 18 applies a relatively high frequency, for example, 40 MHz plasma generating high frequency power to the susceptor 12, and the second high frequency power supply 20 has a relatively low frequency, for example, 2 MHz high frequency power for ion attraction. Is applied to the susceptor 12. Thereby, the susceptor 12 functions as an electrode. Further, the first matching unit 19 and the second matching unit 21 reduce the reflection of the high frequency power from the susceptor 12 to maximize the application efficiency of the high frequency power to the susceptor 12.

  The upper part of the susceptor 12 has a shape in which a small-diameter cylinder protrudes from the tip of a large-diameter cylinder along a concentric axis, and a step is formed in the upper part so as to surround the small-diameter cylinder. An electrostatic chuck 23 made of ceramics having an electrostatic electrode plate 22 therein is disposed at the tip of a small diameter cylinder. A first direct current power source 24 is connected to the electrostatic electrode plate 22, and when a positive potential direct current power is applied to the electrostatic electrode plate 22, the surface of the wafer W on the electrostatic chuck 23 side (hereinafter, referred to as the “electrostatic electrode plate 22”). A negative potential is generated in the “back surface”), and an electric field is generated between the electrostatic electrode plate 22 and the back surface of the wafer W, and the wafer W is electrostatically charged by the Coulomb force or the Johnson-Rahbek force caused by the electric field. It is sucked and held by the chuck 23.

  On the upper part of the susceptor 12, a focus ring 25 is placed on a step in the upper part of the susceptor 12 so as to surround the wafer W attracted and held by the electrostatic chuck 23. The focus ring 25 is made of a semi-conductor, and the plasma distribution area is expanded not only on the wafer W but also on the focus ring 25, so that the plasma density on the peripheral portion of the wafer W is increased on the central portion of the wafer W. Maintain the same density as. This ensures the uniformity of the plasma etching process performed on the entire surface of the wafer W.

  Further, inside the susceptor 12, medium flow paths 26 are provided in multiple layers concentrically with respect to the susceptor 12. A temperature adjusting medium having a predetermined temperature, for example, cooling water or Galden (registered trademark) is supplied to the medium flow path 26 from a medium supply device (not shown). When a high-temperature temperature adjusting medium is supplied to the medium flow path 26, the heat of the temperature adjusting medium is placed on the susceptor 12 and electrostatically attracted to the wafer W (hereinafter referred to as “mounted wafer W”). When the temperature of the wafer W rises and a low temperature adjusting medium is supplied to the medium flow path 26, the heat of the mounting wafer W is transferred to the temperature adjusting medium, and the temperature of the wafer W is reduced. Descent. Therefore, the temperature of the wafer W can be changed by changing the temperature of the temperature adjusting medium supplied to the medium flow path 26.

  A shower head 27 is disposed on the ceiling of the chamber 11 so as to face the susceptor 12. The shower head 27 includes an upper electrode plate 28, a cooling plate 29 that detachably supports the upper electrode plate 28, and a lid body 30 that covers the cooling plate 29. The upper electrode plate 28 is made of a disk-like member having a large number of gas holes 31 penetrating in the thickness direction, and is made of silicon which is a semiconductor. A buffer chamber 32 is provided inside the cooling plate 29, and a processing gas introduction pipe 33 is connected to the buffer chamber 32. The processing gas introduction pipe 33 is connected to a processing gas supply device (not shown). ing.

  For example, the processing gas supply device appropriately adjusts the flow ratio of various gases to generate a mixed gas, and the mixed gas is supplied into the processing chamber 15 through the processing gas introduction pipe 33, the buffer chamber 32, and the gas hole 31. Introduce.

  A second DC power supply 34 is connected to the upper electrode plate 28 of the shower head 27, and DC power having a negative potential is applied to the upper electrode plate 28. At this time, positive ions are implanted into the upper electrode plate 28, and accordingly, the upper electrode plate 28 emits (secondary) electrons to improve the electron density distribution in the plasma inside the processing chamber 15.

  In the substrate processing apparatus 10, the processing gas introduced into the processing chamber 15 is excited by high-frequency power for plasma generation applied to the processing chamber 15 from the first high-frequency power source 18 through the susceptor 12 to become plasma. . The positive ions in the plasma are attracted toward the wafer W by the high-frequency power for ion attraction applied by the second high-frequency power source 20 to the susceptor 12, and the wafer W is subjected to plasma etching.

  FIG. 2 is an enlarged cross-sectional view of a medium flow path provided in the susceptor in FIG.

In FIG. 2, the cross section perpendicular to the flow of the temperature adjusting medium in the medium flow path 26 is rectangular, the length (width) in the horizontal direction in the figure is about 10 mm, and the length in the vertical direction in the figure ( The height is about 20 mm. Of the four inner surfaces of the medium flow path 26, substantially the lower half of each of the bottom surface 26a that is the innermost surface farthest from the mounting wafer W, and the side surfaces 26b and 26c that are two inner surfaces adjacent to the bottom surface 26a. Is covered with a low thermal conductive material having a thermal conductivity lower than that of at least aluminum, for example, a low thermal conductive layer 35 (thermal conductivity inhibiting member) made of resin. The thickness of the low thermal conductive layer 35 is, for example, 1 mm to 2 mm, and the low thermal conductive layer 35 may be formed by applying a low thermal conductive resin to the bottom surface 26a, the side surfaces 26b, and 26c, or the low thermal conductive layer 35. Alternatively, a plate-like body made of the above resin may be attached to the bottom surface 26a and the side surfaces 26b and 26c.

  The low thermal conductive layer 35 is a temperature adjusting medium and a portion of the susceptor 12 that is in contact with the bottom surface 26a of the medium flow path 26 and the substantially lower half of the side surfaces 26b and 26c, that is, a portion of the susceptor 12 far from the mounting wafer W In order to suppress heat conduction between the medium flow path 26 and the medium flow path 26, for example, when a high temperature adjustment medium is supplied to the medium flow path 26, the heat of the high temperature adjustment medium is suppressed. Can be prevented from being absorbed by the remote portion of the susceptor 12. Further, for example, when a low-temperature temperature adjusting medium is supplied to the medium flow path 26, it is possible to prevent the heat of the distant portion of the susceptor 12 from being absorbed by the low-temperature temperature adjusting medium.

  Of the four inner surfaces of the medium flow path 26, two fins 36 made of, for example, aluminum protrude from the top surface 26 d which is the latest inner surface from the mounting wafer W into the medium flow path 26. Each fin 36 is connected to the vicinity of the susceptor 12 from the mounting wafer W (hereinafter simply referred to as “the vicinity of the susceptor 12”) on the top surface 26 d, and further the flow of the temperature adjusting medium in the medium flow path 26. Extending along. Therefore, the contact area between the vicinity of the susceptor 12 and the temperature adjusting medium in the medium flow path 26 is substantially increased via each fin 36, and as a result, the heat of the temperature adjusting medium in the medium flow path 26 is increased. Can be efficiently conducted to the vicinity of the susceptor 12, and heat in the vicinity of the susceptor 12 can be efficiently transmitted to the temperature adjusting medium in the medium flow path 26.

  By the way, normally, when the flow of the temperature adjustment medium is disturbed and becomes a turbulent flow, heat exchange between the temperature adjustment medium and a member in contact with the temperature adjustment medium is promoted, and the temperature adjustment medium becomes smooth. When flowing to form a laminar flow, heat exchange between the temperature adjusting medium and a member in contact with the temperature adjusting medium is suppressed.

  In the present embodiment, the width of the cross section of the medium flow path 26 is about 10 mm and the height is about 20 mm, while the thickness of the low thermal conductive layer 35 is 1 mm to 2 mm. Since the area occupied by the cross section of the low thermal conductive layer 35 is small, the low thermal conductive layer 35 does not hinder the flow of the temperature adjusting medium. In addition, since the low thermal conductive layer 35 is made of resin, the low thermal conductive layer 35 reduces the frictional resistance of the substantially lower half of the bottom surface 26a and the side surfaces 26b and 26c of the medium flow path 26. As a result, the temperature adjustment medium flowing in the vicinity of the distant portion of the susceptor 12 smoothly flows to form a laminar flow, and heat exchange between the temperature adjustment medium and the distant portion of the susceptor 12 is suppressed.

  In the present embodiment, two fins 36 protrude from the top surface 26a into the medium flow path 26, and each fin 36 inhibits the flow of the temperature adjusting medium. As a result, the flow of the temperature adjustment medium in contact with the vicinity of the susceptor 12 is disturbed and becomes turbulent, and heat exchange between the temperature adjustment medium and the vicinity of the susceptor 12 is promoted.

  FIG. 3 is a graph schematically showing a temperature change of the susceptor when a high-temperature temperature adjusting medium is supplied to the medium flow path of FIG. In this graph, the solid line indicates the temperature in the vicinity of the susceptor 12, and the broken line indicates the temperature in the far part of the susceptor 12.

  In the medium flow path 26, the low heat conductive layer 35 suppresses heat conduction between the temperature adjusting medium and the distant portion of the susceptor 12, so that the heat of the temperature adjusting medium positively increases the temperature of the distant portion of the susceptor 12. Not used for. On the other hand, the two fins 36 promote heat exchange between the temperature adjusting medium and the vicinity of the susceptor 12, and the top surface 26 d is not covered with the low thermal conductive layer 35, so that the temperature adjusting medium and the vicinity of the susceptor 12 Therefore, the heat of the temperature adjusting medium is positively used for increasing the temperature in the vicinity of the susceptor 12.

  Therefore, as shown in the graph of FIG. 3, the temperature increase in the distant portion of the susceptor 12 is delayed more than the temperature increase in the vicinity portion of the susceptor 12, but the temperature increase in the vicinity portion of the susceptor 12 is performed quickly. As a result, the temperature rise of the mounting wafer W in contact with the vicinity of the susceptor 12 is promoted.

  In addition, when a low-temperature temperature adjusting medium is supplied to the medium flow path 26, the low heat conductive layer 35 suppresses heat conduction between the temperature adjusting medium and a distant portion of the susceptor 12, so that the temperature adjusting medium is a susceptor. It does not actively absorb the heat of 12 distant parts. On the other hand, the two fins 36 promote heat exchange between the temperature adjusting medium and the vicinity of the susceptor 12, and the top surface 26 d is not covered with the low thermal conductive layer 35, so that the temperature adjusting medium and the vicinity of the susceptor 12 Therefore, the temperature adjusting medium positively absorbs the heat in the vicinity of the susceptor 12.

  Accordingly, the temperature drop in the distant part of the susceptor 12 is delayed more than the temperature drop in the vicinity of the susceptor 12, but the temperature drop in the vicinity of the susceptor 12 is performed quickly. As a result, the temperature drop of the mounting wafer W in contact with the vicinity of the susceptor 12 is promoted.

  As described above, according to the susceptor 12 as the mounting table according to the present embodiment, the entire bottom surface 26a of the medium flow path 26 and the substantially lower half of each of the two side surfaces 26b and 26c are the low thermal conductive layer 35. Therefore, the distant portion of the susceptor 12 can be prevented from being absorbed by the distant portion of the susceptor 12 without constituting the distant portion of the susceptor 12 with a material having low thermal conductivity. The heat of the distant portion of the susceptor 12 can be prevented from being absorbed by the temperature adjusting medium, and the vicinity of the susceptor 12 can actively absorb the heat of the temperature adjusting medium, and the temperature adjusting medium can be used as the susceptor. The heat in the vicinity of 12 can be actively absorbed. As a result, the temperature change of the mounting wafer W in contact with the vicinity of the susceptor 12 can be promoted without complicating the configuration of the susceptor 12.

  In the medium flow path 26 described above, the two fins 36 protrude from the top surface 26d toward the medium flow path 26. However, as shown in FIG. 4A, the two fins 36 may not be provided. . Also in this case, the low thermal conductive layer 35 covering the entire bottom surface 26a of the medium flow path 26 and the substantially lower half of each of the two side surfaces 26b and 26c is heat generated between the temperature adjusting medium and the distant portion of the susceptor 12. As a result, the temperature change of the mounting wafer W in contact with the vicinity of the susceptor 12 can be promoted.

  Further, in the medium flow path 26 described above, the entire bottom surface 26a and the substantially lower half of each of the two side surfaces 26b and 26c are covered with the low thermal conductive layer 35. As shown in FIG. Only the entire surface may be covered with the low thermal conductive layer 35, and the two side surfaces 26b and 26c may not be covered with the low thermal conductive layer 35 at all. Even in this case, heat conduction between the temperature adjusting medium and the distant portion of the susceptor 12 can be suppressed to some extent by only the low heat conductive layer 35 on the bottom surface 26a.

  Further, instead of the two fins 36, a plurality of pillars (not shown) made of aluminum protruding from the top surface 26 d toward the medium flow path 26 may be provided. Even in this case, the contact area between the vicinity of the susceptor 12 and the temperature adjustment medium in the medium flow path 26 is substantially increased, and heat exchange between the temperature adjustment medium and the vicinity of the susceptor 12 is promoted. .

  Next, a mounting table according to the second embodiment of the present invention will be described.

  Since the configuration and operation of this embodiment are basically the same as those of the first embodiment described above, the description of the overlapping configuration and operation will be omitted, and the description of the different configuration and operation will be described below. Do.

  FIG. 5 is an enlarged cross-sectional view of a medium flow path provided in a susceptor as a mounting table according to the present embodiment.

  In FIG. 5, the cross-sectional shape perpendicular to the flow of the temperature adjusting medium in the medium flow path 37 is the same as the cross-sectional shape of the medium flow path 26. In the medium flow path 37, the entire bottom surface 37a and the substantially lower half of each of the two side surfaces 37b and 37c are covered with a heat insulating material, for example, a heat insulating layer 38 (heat conduction inhibiting member) made of porous ceramics. The thickness of the heat insulating layer 38 is, for example, 1 mm to 2 mm, and the heat insulating layer 38 may be formed by spraying ceramics on the bottom surface 37a and the side surfaces 37b and 37c, or a plate-like body made of porous ceramics. You may form by affixing on the bottom face 37a and the side surfaces 37b and 37c. The heat insulating layer 38 blocks heat conduction between the temperature adjusting medium and the remote portion of the susceptor 12.

  Further, two fins 39 having the same shape as the fins 36 protrude from the top surface 37 d of the medium flow path 37 into the medium flow path 37.

  FIG. 6 is a graph schematically showing changes in the temperature of the susceptor when a high-temperature temperature adjusting medium is supplied to the medium flow path of FIG. In this graph, the solid line indicates the temperature in the vicinity of the susceptor 12, and the broken line indicates the temperature in the far part of the susceptor 12.

  In the medium flow path 37, the heat insulating layer 38 blocks heat conduction between the temperature adjusting medium and the distant portion of the susceptor 12, so that the heat of the temperature adjusting medium is not used for increasing the temperature of the distant portion of the susceptor 12. Only the heat in the vicinity of the susceptor 12 is conducted to the distant portion of the susceptor 12. On the other hand, the two fins 39 facilitate heat exchange between the temperature adjustment medium and the vicinity of the susceptor 12, and the top surface 37 d is not covered with the heat insulating layer 38, so that the temperature adjustment medium and the vicinity of the susceptor 12 Therefore, most of the heat of the temperature adjusting medium is used to increase the temperature in the vicinity of the susceptor 12.

  Therefore, as shown in the graph of FIG. 6, the temperature rise in the distant portion of the susceptor 12 is performed very slowly, while the temperature rise in the vicinity of the susceptor 12 is performed quickly. As a result, the temperature rise of the mounting wafer W in contact with the vicinity of the susceptor 12 is promoted.

  Further, since the heat conducted to the distant portion of the susceptor 12 is only the heat in the vicinity of the susceptor 12, the amount of heat conducted to the distant portion of the susceptor 12 before the temperature of the distant portion of the susceptor 12 rises greatly. The amount of heat released from the distant part of the susceptor 12 is balanced. Therefore, the temperature of the distant part of the susceptor 12 does not rise to the temperature of the vicinity of the susceptor 12 and is maintained at a temperature lower than the temperature of the vicinity of the susceptor 12.

  When a low-temperature temperature adjusting medium is supplied to the medium flow path 37, the heat insulating layer 38 blocks heat conduction between the temperature adjusting medium and the distant portion of the susceptor 12, so that the temperature adjusting medium is distant from the susceptor 12. Does not absorb the heat of the part. On the other hand, the two fins 39 facilitate heat exchange between the temperature adjustment medium and the vicinity of the susceptor 12, and the top surface 37 d is not covered with the heat insulating layer 38, so that the temperature adjustment medium and the vicinity of the susceptor 12 Since the heat conduction between them is not interrupted, the temperature adjusting medium mainly absorbs the heat in the vicinity of the susceptor 12.

  Accordingly, the temperature drop in the distant part of the susceptor 12 is performed very slowly, while the temperature drop in the vicinity of the susceptor 12 is performed quickly. As a result, the temperature drop of the mounting wafer W in contact with the vicinity of the susceptor 12 is promoted.

  In addition, it is not necessary to provide the two fins 39, that only the entire bottom surface 37a may be covered with the heat insulating layer 38, and that a plurality of pillars may be provided instead of the two fins 39. This is the same as in the first embodiment.

  In each of the embodiments described above, the low thermal conductive layer 35 is formed of a coated resin or a resin plate, and the heat insulating layer 38 is formed of a thermally sprayed porous ceramic or a plate of porous ceramic. From the viewpoint of heat resistance, it is preferable to form the heat insulating layer 38 using a plate-like body made of porous ceramics. When the susceptor 12 is formed by laminating a plurality of plate-like bodies, the temperature of the susceptor 12 rises to about 500 ° C. in order to braze the plate-like bodies to each other. Even if the temperature of the susceptor 12 rises to about 500 ° C., it does not melt or burn out.

  The substrate on which the substrate processing apparatus including the mounting table according to each of the embodiments described above performs plasma etching processing is not limited to a wafer for semiconductor devices, but may be an FPD (Flat Panel Display) including an LCD (Liquid Crystal Display) or the like. Various substrates to be used, a photomask, a CD substrate, a printed substrate, and the like may be used.

  Although the present invention has been described using the above embodiments, the present invention is not limited to the above embodiments.

W wafer 10 substrate processing apparatus 12 susceptor 26, 37 medium flow path 26a, 37a bottom surface 26b, 26c, 37b, 37c side surface 26d, 37d top surface 35, 38 low heat conductive layer 36, 39 fin

Claims (8)

It has a medium flow path through which a medium at a predetermined temperature flows, and is a mounting table for mounting a substrate,
Section perpendicular the medium flow path to the flow of the medium is rectangular, of the inner surface of the medium flow path, and the placement has been farthest side from the substrate, adjacent to the farthest surface The mounting table characterized in that substantially half of the farthest surface side of each of the two surfaces is covered with a heat conduction inhibiting member that is in direct contact with the medium flowing through the medium flow path . Mounting table according to claim 1, wherein a protruding objects protruding toward the medium flow path from the recent face from the placement to the substrate of an inner surface of the medium flow path. The protruding objects the mounting according to claim 2 Symbol mounting characterized by comprising the fins extending along the flow of the medium in the medium channel table. Mounting table according to any one of claims 1 to 3 the thickness of the thermally conductive inhibiting member is characterized by a 1mm to 2 mm. The mounting table according to any one of claims 1 to 4 , wherein the heat conduction-inhibiting member is made of a low heat conductive material. 6. The mounting table according to claim 5, wherein the low thermal conductive material is a resin. Mounting table according to any one of claims 1 to 4 wherein the heat conduction inhibiting member is characterized by comprising a heat insulating material. The mounting table according to claim 7, wherein the heat insulating material is porous ceramics.

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