JP5448543B2 - Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same - Google Patents

Description

  The present invention relates to an actinic ray-sensitive or radiation-sensitive resin composition used in a semiconductor manufacturing process such as an IC, a circuit board such as a liquid crystal or a thermal head, and other photofabrication lithography processes, and the composition. The present invention relates to a pattern forming method using an object. In particular, a resist composition suitable for exposure with an immersion projection exposure apparatus using far ultraviolet light having a wavelength of 300 nm or less as a light source, a resin used in the resist composition, a compound used in the synthesis of the resin, and the positive The present invention relates to a pattern forming method using a mold resist composition.

With the miniaturization of semiconductor elements, the exposure light source has become shorter in wavelength and the projection lens has a higher numerical aperture (high NA). Currently, an exposure machine with NA 0.84 using an ArF excimer laser having a 193 nm wavelength as a light source has been developed. ing. These can be expressed by the following equations as is generally well known.
(Resolving power) = k ₁ · (λ / NA)
(Depth of focus) = ± k ₂ · λ / NA ²
Where λ is the wavelength of the exposure light source, NA is the numerical aperture of the projection lens, and k ₁ and k ₂ are coefficients related to the process.
As a technique for increasing the resolving power in an optical microscope to increase the resolving power by further shortening the wavelength, a liquid with a high refractive index (hereinafter also referred to as “immersion liquid”) is conventionally filled between the projection lens and the sample. A so-called immersion method is known.

This “immersion effect” means that when λ ₀ is the wavelength of the exposure light in the air, n is the refractive index of the immersion liquid with respect to air, θ is the convergence angle of the light beam, and NA ₀ = sin θ. The above-described resolving power and depth of focus can be expressed by the following equations.
(Resolving power) = k ₁ · (λ ₀ / n) / NA ₀
(Depth of focus) = ± k ₂ · (λ ₀ / n) / NA ₀ ²
That is, the immersion effect is equivalent to using an exposure wavelength having a wavelength of 1 / n. In other words, in the case of a projection optical system with the same NA, the depth of focus can be increased n times by immersion. This is effective for all pattern shapes, and can be combined with a super-resolution technique such as a phase shift method and a modified illumination method which are currently being studied.
Examples of apparatuses in which this effect is applied to transfer of a fine image pattern of a semiconductor element are introduced in Patent Document 1, Patent Document 2, and the like.

Recent progress in immersion exposure technology is reported in Non-Patent Document 1, Non-Patent Document 2, Non-Patent Document 3, and the like. In the case of using an ArF excimer laser as a light source, pure water (refractive index of 1.44 at 193 nm) is considered to be most promising as an immersion liquid in terms of handling safety, transmittance at 193 nm, and refractive index.
Since the resist for KrF excimer laser (248 nm), an image forming method called chemical amplification has been used as an image forming method for a resist in order to compensate for sensitivity reduction due to light absorption. Explaining by taking a positive chemical amplification image forming method as an example, the acid generator in the exposed area is decomposed by exposure to generate an acid upon exposure, and the generated acid is reacted as a reaction catalyst by post exposure baking (PEB). Is used to change an alkali-insoluble group to an alkali-soluble group, and an exposed portion is removed by alkali development.

The immersion ArF excimer laser (193 nm) resist using this chemical amplification mechanism is becoming mainstream because it can form a fine pattern.
In addition, when a chemically amplified resist is applied to immersion exposure, the resist layer comes into contact with the immersion liquid during exposure, so that the resist layer is altered and components that adversely affect the immersion liquid are exuded from the resist layer. It has been pointed out to do. Patent Document 3 describes an example in which resist performance is changed by immersing a resist for ArF exposure in water before and after exposure, and points out a problem in immersion exposure. Patent Document 4 describes an example in which exudation is suppressed by adding a resin containing silicon or fluorine. However, when such a resin is added, the surface of the upper part of the resist pattern becomes rough and development defects increase. Patent Document 5 discloses a resist to which a specific polymer compound having a fluorine atom and a lactone structure is added as a resist material having a small change in shape between dry exposure and immersion exposure and having excellent process applicability.
In Patent Document 6, use of a resin containing a (meth) acrylic ester unit having a cyclic structure in the side chain and a styrene unit substituted with a substituent having a fluorine atom as a resist material having excellent etching resistance together with transmittance Is disclosed.

In recent years, as the miniaturization of resist patterns has further progressed, improvement in various lithography characteristics as well as high resolution has been demanded. As one of them, improvement of the depth of focus (DOF) characteristic is required in order to improve a process margin and the like during pattern formation.
“DOF” refers to a range of depth of focus in which a resist pattern can be formed with a dimension within which a deviation from a target dimension is within a predetermined range when exposure is performed with the same exposure amount while shifting the focus up and down. This is a range in which a faithful resist pattern can be obtained, and a larger value is more preferable.
However, the conventional resist composition has a problem that the DOF characteristics are insufficient.
It has also been desired to suppress the surface roughness of the resist pattern and development defects.

JP-A-57-153433 JP-A-7-220990 International Publication No. 04/068242 Pamphlet JP 2006-309245 A JP 2008-111103 A JP 2007-291397 A

Bulletin of the International Society of Optical Engineering (Proc. SPIE), 2002, 4688, 11 J. et al. Vac. Sci. Tecnol. B 17 (1999) Bulletin of International Society of Optical Engineering (Proc. SPIE), 2000, 3999, 2nd page

  An object of the present invention is to provide an actinic ray-sensitive or radiation-sensitive resin composition with improved depth of focus margin (DOF), surface roughness, and development defect of a resist pattern, and a pattern forming method using the composition. It is to be.

上記一般式（Ｙ２）中、
ｎは０〜５の整数を表し、ｍは０〜２の整数を表す。
Ｘ _ａ 及びＸ _ｂ は、各々独立に、水素原子、フッ素原子、又はアルキル基を表し、また、互いに結合して環を形成してもよい。
Ｘ _１ 及びＸ _２ は、各々独立に、水素原子、フッ素原子、アルキル基又はフッ素化されたアルキル基であり、Ｘ _１ 及びＸ _２ のどちらか一方又は両方に少なくとも１個以上のフッ素原子を含む。
Ｒ _１ は水素原子、アルキル基、シクロアルキル基、又は酸分解性基である。
Ｒ _２ は、水素原子、フッ素原子、アルキル基又はフッ素化されたアルキル基である。

上記一般式（Ｙ３）中、
Ｒ _４ は、水素原子、フッ素原子、又はフッ素化されていてもよい、アルキル基もしくはシクロアルキル基である。
Ｒ _５ は、単結合又は２価の炭化水素基を表す。
ｌは１〜５の整数、ｑは０〜４の整数を表す。
Ｘ _１ 及びＸ _２ は、各々独立に、水素原子、フッ素原子、アルキル基又はフッ素化されたアルキル基であり、Ｘ _１ 及びＸ _２ のどちらか一方又は両方に少なくとも１個以上のフッ素原子を含む。
Ｒ _１ は、水素原子、アルキル基、シクロアルキル基、又は酸分解性基である。
Ｒ _２ は、水素原子、フッ素原子、アルキル基又はフッ素化されたアルキル基である。

上記一般式（Ｙ５）中、
Ｒ _１１ は、単結合、又は、少なくとも一つのフッ素原子で置換されていてもよいアルキレン基を表す。Ｒ _８ 及びＲ _９ は、各々独立に、水素原子、フッ素原子、メチル基、又はトリフルオロメチル基を表す。
Ｒ _７ 及びＲ _１０ は、各々独立に、単結合又は−Ｏ−もしくは−Ｃ（Ｒ _１２ ）（Ｒ _１３ ）−を表す。
Ｒ _６ 、Ｒ _１２ 及びＲ _１３ は、各々独立に、水素原子、フッ素原子、メチル基、又はトリフルオロメチル基を表す。
Ｒ _２ は、水素原子、フッ素原子、アルキル基又はフッ素化されたアルキル基である。
Ｘ _４ は、単結合、−Ｏ−、−Ｃ（＝Ｏ）−Ｏ−、−Ｃ（＝Ｏ）−Ｏ−Ｒ _１４ −又は−Ｃ（＝Ｏ）−ＮＨ−Ｒ _１４ −であり、Ｒ _１４ は単結合、又は直鎖状、分岐状若しくは環状のアルキレン基であり、該アルキレン基の鎖中にエステル基又はエーテル基を有していてもよい。

上記一般式（Ｙ６）中、
Ｒ _１５ は、直鎖もしくは分岐炭化水素基、または環状炭化水素構造を有する２価の炭化水素基を表す。
Ｒ _１ は水素原子、アルキル基、シクロアルキル基、又は酸分解性基である。
Ｒ _２ は、水素原子、フッ素原子、アルキル基又はフッ素化されたアルキル基である。
Ｘ _４ は、単結合、−Ｏ−、−Ｃ（＝Ｏ）−Ｏ−、−Ｃ（＝Ｏ）−Ｏ−Ｒ _１４ −又は−Ｃ（＝Ｏ）−ＮＨ−Ｒ _１４ −であり、Ｒ _１４ は単結合、又は直鎖状、分岐状若しくは環状のアルキレン基であり、該アルキレン基の鎖中にエステル基又はエーテル基を有していてもよい。
〔２〕
さらに、界面活性剤、塩基性化合物、溶剤を含有することを特徴とする〔１〕に記載の感活性光線性又は感放射線性樹脂組成物。
〔３〕
〔１〕又は〔２〕に記載の感活性光線性又は感放射線性樹脂組成物を用いて形成されるレジスト膜。
〔４〕
〔１〕又は〔２〕に記載の感活性光線性又は感放射線性樹脂組成物を用いて、膜を形成し、該膜を、露光、現像することを特徴とするパターン形成方法。
〔５〕
〔４〕に記載の露光方法が、液浸露光であることを特徴とするパターン形成方法。
本発明は、前記〔１〕〜〔５〕に係る発明であるが、以下、それ以外の事項（例えば、下記＜１＞〜＜１４＞）についても記載している。
＜１＞ （Ａ）下記一般式（Ｙ）で表される基を有し、酸の作用によりアルカリ現像液に対する溶解速度が増大する樹脂、
（Ｂ）活性光線又は放射線の照射により、酸を発生する化合物、及び、
（Ｃ）少なくとも１つの極性変換基を有する繰り返し単位を含有し、かつ、フッ素原子及び珪素原子の少なくともいずれかを有する樹脂
を含有することを特徴とする感活性光線性又は感放射線性樹脂組成物。 As a result of intensive studies to solve the above problems, the present inventor has reached the present invention shown below.
[1]
(A) a resin having a repeating unit represented by any one of the following general formulas (Y2), (Y3), (Y5) and (Y6), which increases the dissolution rate in an alkaline developer by the action of an acid;
(B) a compound that generates an acid upon irradiation with an actinic ray or radiation, and
(C) A resin having a repeating unit (c ′) having at least one of a fluorine atom and a silicon atom and at least one polarity converting group on one side chain
The content of the resin (A) is 50 to 99% by mass with respect to the total solid content of the actinic ray-sensitive or radiation-sensitive resin composition, and the content of the resin (C) is An actinic ray-sensitive or radiation-sensitive resin composition that is 0.01 to 10% by mass relative to the total solid content.

In the general formula (Y2),
n represents an integer of 0 to 5, and m represents an integer of 0 to 2.
X _a and X _b each independently represent a hydrogen atom, a fluorine atom, or an alkyl group, and may be bonded to each other to form a ring.
X ₁ and X ₂ are each independently a hydrogen atom, a fluorine atom, an alkyl group or a fluorinated alkyl group, and one or both of X ₁ and X ₂ contain at least one fluorine atom. .
R ₁ is a hydrogen atom, an alkyl group, a cycloalkyl group, or an acid-decomposable group.
R ₂ is a hydrogen atom, a fluorine atom, an alkyl group or a fluorinated alkyl group.

In the general formula (Y3),
R ₄ is a hydrogen atom, a fluorine atom, or an alkyl group or cycloalkyl group which may be fluorinated.
R ₅ represents a single bond or a divalent hydrocarbon group.
l represents an integer of 1 to 5, and q represents an integer of 0 to 4.
X ₁ and X ₂ are each independently a hydrogen atom, a fluorine atom, an alkyl group or a fluorinated alkyl group, and one or both of X ₁ and X ₂ contain at least one fluorine atom. .
R ₁ is a hydrogen atom, an alkyl group, a cycloalkyl group, or an acid-decomposable group.
R ₂ is a hydrogen atom, a fluorine atom, an alkyl group or a fluorinated alkyl group.

In the general formula (Y5),
R ₁₁ represents a single bond or an alkylene group which may be substituted with at least one fluorine atom. R ₈ and R ₉ each independently represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group.
R ₇ and R ₁₀ each independently represents a single bond or —O— or —C (R ₁₂ ) (R ₁₃ ) —.
R ₆ , R ₁₂ and R ₁₃ each independently represents a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group.
R ₂ is a hydrogen atom, a fluorine atom, an alkyl group or a fluorinated alkyl group.
X ₄ is a single bond, —O—, —C (═O) —O—, —C (═O) —O—R ₁₄ — or —C (═O) —NH—R ₁₄ —, ₁₄ is a single bond or a linear, branched or cyclic alkylene group, and the alkylene group may have an ester group or an ether group in the chain.

In the general formula (Y6),
R ₁₅ represents a linear or branched hydrocarbon group or a divalent hydrocarbon group having a cyclic hydrocarbon structure.
R ₁ is a hydrogen atom, an alkyl group, a cycloalkyl group, or an acid-decomposable group.
R ₂ is a hydrogen atom, a fluorine atom, an alkyl group or a fluorinated alkyl group.
X ₄ is a single bond, —O—, —C (═O) —O—, —C (═O) —O—R ₁₄ — or —C (═O) —NH—R ₁₄ —, ₁₄ is a single bond or a linear, branched or cyclic alkylene group, and the alkylene group may have an ester group or an ether group in the chain.
[2]
The actinic ray-sensitive or radiation-sensitive resin composition according to [1], further comprising a surfactant, a basic compound, and a solvent.
[3]
A resist film formed using the actinic ray-sensitive or radiation-sensitive resin composition according to [1] or [2].
[4]
A pattern forming method comprising forming a film using the actinic ray-sensitive or radiation-sensitive resin composition according to [1] or [2], and exposing and developing the film.
[5]
[4] The pattern forming method, wherein the exposure method according to [4] is immersion exposure.
Although this invention is invention which concerns on said [1]-[5], below, it describes also about other matters (for example, following <1>-<14>).
<1> (A) a resin having a group represented by the following general formula (Y) and having an increased dissolution rate in an alkali developer by the action of an acid;
(B) a compound that generates an acid upon irradiation with an actinic ray or radiation, and
(C) An actinic ray-sensitive or radiation-sensitive resin composition containing a repeating unit having at least one polar conversion group and containing at least one of a fluorine atom and a silicon atom .

X ₁ and X ₂ each independently represent a hydrogen atom, a fluorine atom, an alkyl group or a fluorinated alkyl group, and at least one or both of X ₁ and X ₂ contain at least one fluorine atom. . R ₁ is a hydrogen atom, an alkyl group, a cycloalkyl group, or an acid-decomposable group.

<2> The actinic ray-sensitive or radiation-sensitive resin composition according to <1>, wherein R _{1 in the} group represented by the general formula (Y) of the resin (A) is a hydrogen atom. .
<3> At least one of X ₁ and X _{2 in} the group represented by the general formula (Y) of the resin (A) is —CF ₃ , described in the above <1> or <2> An actinic ray-sensitive or radiation-sensitive resin composition.

Ｒ₂は、水素原子、フッ素原子、アルキル基又はフッ素化されたアルキル基である。
ｎ₀は、１〜５を表す。
Ｘ₃は、単結合、−Ｏ−、−Ｃ（＝Ｏ）−Ｏ−、−Ｃ（＝Ｏ）−ＮＨ−、直鎖状、分岐状又は環状のアルキレン基、芳香環基、また、これらの少なくとも２つを組み合わせた２価の基から、(ｎ₀−１)個の水素原子を除いた (ｎ₀＋１)価の基を表す。なお、Ｘ₃が有す
る環状のアルキレン基または芳香環における環状骨格にヘテロ原子が含まれていてもよい。
Ｒ₃は、単結合又は２価の炭化水素基を表す。
Ｘ₁及びＸ₂の少なくとも一つとＲ₃とが結合して環構造を形成してもよい。
Ｘ₁、Ｘ₂及びＲ₁は、前記と同義である。 <4> The actinic ray-sensitive or radiation-sensitive material according to any one of <1> to <3>, wherein the resin (A) contains a repeating unit represented by the following general formula (Y1). Resin composition.

R ₂ is a hydrogen atom, a fluorine atom, an alkyl group or a fluorinated alkyl group.
n ₀ represents 1 to 5.
X ₃ represents a single bond, —O—, —C (═O) —O—, —C (═O) —NH—, a linear, branched or cyclic alkylene group, an aromatic ring group, and these Represents a (n ₀ +1) -valent group obtained by removing (n ₀ -1) hydrogen atoms from a divalent group formed by combining at least two of the above. Note that a hetero atom may be contained in the cyclic skeleton of the cyclic alkylene group or aromatic ring of X ₃ .
R ₃ represents a single bond or a divalent hydrocarbon group.
At least one of X ₁ and X ₂ may be bonded to R ₃ to form a ring structure.
X ₁ , X ₂ and R ₁ are as defined above.

ｎは０〜５の整数を表し、ｍは０〜２の整数を表す。
Ｘ_a及びＸ_bは、各々独立に、水素原子、フッ素原子、またはアルキル基を表し、また、互いに結合して環を形成してもよい。
Ｘ₁、Ｘ₂、Ｒ₁及びＲ₂は、前記と同様である。 <5> The actinic ray-sensitive or radiation-sensitive material according to any one of <1> to <3>, wherein the resin (A) contains a repeating unit represented by the following general formula (Y2). Resin composition.

n represents an integer of 0 to 5, and m represents an integer of 0 to 2.
X _a and X _b each independently represent a hydrogen atom, a fluorine atom, or an alkyl group, and may be bonded to each other to form a ring.
X ₁ , X ₂ , R ₁ and R ₂ are the same as described above.

Ｒ₄は、水素原子、フッ素原子、または、フッ素化されていてもよい、アルキル基もしくはシクロアルキル基である。
Ｒ₅は、単結合又は２価の炭化水素基を表す。
ｌは１〜５の整数、ｑは０〜４の整数を表す。
Ｘ₁、Ｘ₂、Ｒ₁及びＲ₂は、前記と同様である。 <6> The actinic ray-sensitive or radiation-sensitive material according to any one of <1> to <3>, wherein the resin (A) contains a repeating unit represented by the following general formula (Y3). Resin composition.

R ₄ is a hydrogen atom, a fluorine atom, or an alkyl group or cycloalkyl group which may be fluorinated.
R ₅ represents a single bond or a divalent hydrocarbon group.
l represents an integer of 1 to 5, and q represents an integer of 0 to 4.
X ₁ , X ₂ , R ₁ and R ₂ are the same as described above.

Ｑは３〜１０員の脂環構造を表す。
Ｘ₄は、単結合、−Ｏ−、−Ｃ（＝Ｏ）−Ｏ−、−Ｃ（＝Ｏ）−Ｏ−Ｒ₁₄−又は−Ｃ（＝Ｏ）−ＮＨ−Ｒ₁₄−であり、Ｒ₁₄は単結合、直鎖状、分岐状又は環状のアルキレン基であり、該アルキレン基の鎖中にエステル基又はエーテル基を有していてもよい。
Ｘ₁、Ｘ₂、Ｒ₁、Ｒ₂、Ｒ₄、Ｒ₅、ｌ及びｑは、前記と同様である。 <7> The actinic ray-sensitive or radiation-sensitive material according to any one of <1> to <3>, wherein the resin (A) contains a repeating unit represented by the following general formula (Y4). Resin composition.

Q represents a 3- to 10-membered alicyclic structure.
X ₄ is a single bond, —O—, —C (═O) —O—, —C (═O) —O—R ₁₄ — or —C (═O) —NH—R ₁₄ —, R ₁₄ is a single bond, linear, branched or cyclic alkylene group, which may have an ester group or an ether group in the chain of the alkylene group.
X ₁ , X ₂ , R ₁ , R ₂ , R ₄ , R ₅ , l and q are the same as described above.

Ｒ₁₁は、単結合、又は、少なくとも一つのフッ素原子で置換されていてもよいアルキレン基を表す。Ｒ₈及びＲ₉は、各々独立に、水素原子、フッ素原子、メチル基、又はトリフルオロメチル基を表す。
Ｒ₇及びＲ₁₀は、各々独立に、単結合又は−Ｏ−もしくは−Ｃ(Ｒ₁₂) (Ｒ₁₃)−を表す。
Ｒ₆、Ｒ₁₂及びＲ₁₃は、各々独立に、水素原子、フッ素原子、メチル基、又はトリフルオロメチル基を表す。Ｒ₂及びＸ₄は、前記と同様である。 <8> The actinic ray-sensitive or radiation-sensitive material according to any one of <1> to <3>, wherein the resin (A) contains a repeating unit represented by the following general formula (Y5). Resin composition.

R ₁₁ represents a single bond or an alkylene group which may be substituted with at least one fluorine atom. R ₈ and R ₉ each independently represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group.
R ₇ and R ₁₀ each independently represents a single bond or —O— or —C (R ₁₂ ) (R ₁₃ ) —.
R ₆ , R ₁₂ and R ₁₃ each independently represents a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group. R ₂ and X ₄ are the same as described above.

Ｒ₁、Ｒ₂、及びＸ₄は、前記と同様である。
Ｒ₁₅は、直鎖もしくは分岐炭化水素基、または環状炭化水素構造を有する２価の炭化水素基を表す。 <9> The actinic ray-sensitive or radiation-sensitive material according to any one of <1> to <3>, wherein the resin (A) contains a repeating unit represented by the following general formula (Y6). Resin composition.

R ₁ , R ₂ , and X ₄ are the same as described above.
R ₁₅ represents a linear or branched hydrocarbon group or a divalent hydrocarbon group having a cyclic hydrocarbon structure.

式（３）中、
Ａは、エステル結合（−ＣＯＯ−で表わされる基）または−ＣＯＮＨ−で表わされる基を表す。
Ｒ_０は、アルキレン基、シクロアルキレン基、又はその組み合わせを表し、複数ある場合には、同じでも異なっていてもよい。
Ｚは、エーテル結合、エステル結合、カルボニル結合、アミド結合、ウレタン結合、又はウレア結合を表し、複数ある場合には、同じでも異なっていてもよい。
Ｒ₈は、ラクトン構造を有する１価の有機基を表す。
ｎは、１〜５の整数を表す。
Ｒ₇は、水素原子、ハロゲン原子又はアルキル基を表す。
＜１２＞ 樹脂（Ｃ）が、極性変換基を２つ以上有する繰り返し単位を含有することを特徴とする上記＜１＞〜＜１１＞のいずれか記載に記載の感活性光線性又は感放射線性樹脂組成物。
＜１３＞ 上記＜１＞〜＜１０＞のいずれか記載の組成物を用いて、膜を形成し、該膜を、露光、現像することを特徴とするパターン形成方法。
＜１４＞ 上記＜１１＞に記載の露光方法が、液浸露光であることを特徴とするパターン形成方法。 <10> The actinic ray-sensitive or radiation-sensitive resin composition according to any one of <1> to <9>, further comprising a surfactant, a basic compound, and a solvent.
<11> The actinic ray-sensitive or sensation according to any one of <1> to <10>, wherein the resin (A) contains a repeating unit represented by the following general formula (3). Radiation resin composition.

In formula (3),
A represents an ester bond (a group represented by —COO—) or a group represented by —CONH—.
R ₀ represents an alkylene group, a cycloalkylene group, or a combination thereof, and when there are a plurality of R _{0 s} , they may be the same or different.
Z represents an ether bond, an ester bond, a carbonyl bond, an amide bond, a urethane bond, or a urea bond, and when there are a plurality thereof, they may be the same or different.
R ₈ represents a monovalent organic group having a lactone structure.
n represents an integer of 1 to 5.
R ₇ represents a hydrogen atom, a halogen atom or an alkyl group.
<12> The actinic ray-sensitive or radiation-sensitive property according to any one of <1> to <11>, wherein the resin (C) contains a repeating unit having two or more polar conversion groups. Resin composition.
<13> A pattern forming method comprising: forming a film using the composition according to any one of <1> to <10>, and exposing and developing the film.
<14> The pattern forming method, wherein the exposure method according to <11> is immersion exposure.

According to the present invention, it is possible to provide an actinic ray-sensitive or radiation-sensitive resin composition in which depth of focus margin (DOF), surface roughness, and development defects are improved in patterning, and an excellent pattern forming method using the same. it can. The resin composition of the present invention is suitable as a positive resist composition.

Hereinafter, the present invention will be described in detail.
In addition, in the description of the group (atomic group) in this specification, the description which does not describe substitution and non-substitution includes what does not have a substituent and what has a substituent. . For example, the “alkyl group” includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group).
In the present invention, “active light” or “radiation” means, for example, an emission line spectrum of a mercury lamp, far ultraviolet rays represented by excimer laser, extreme ultraviolet rays, X-rays, electron beams, and the like. In the present invention, light means actinic rays or radiation.
In addition, “exposure” in the present specification is represented not only by exposure to deep ultraviolet rays, X-rays, EUV light and the like, but also by particle beams such as electron beams and ion beams, unless otherwise specified, such as mercury lamps and excimer lasers. Drawing is also included in the exposure.

(A) Resin whose solubility in an alkali developer is increased by the action of an acid Resin (A) whose solubility in an alkali developer is increased by the action of an acid contained in the actinic ray-sensitive or radiation-sensitive resin composition of the present invention ) Contains a group represented by the following general formula (Y).

X ₁ and X ₂ each independently represent a hydrogen atom, a fluorine atom, an alkyl group, or a fluorinated alkyl group (preferably having 1 to 4 carbon atoms), and one or both of X ₁ and X ₂ It contains at least one fluorine atom.
R ₁ represents a hydrogen atom, an alkyl group (preferably having a carbon number of 1 to 10), a cycloalkyl group (preferably having a carbon number of 3 to 10), or an acid-decomposable group, and is preferably a hydrogen atom.
Examples of the acid-decomposable group as R ₁ include the same acid-decomposable groups as those described later for the resin (A), but a tertiary ester group or an acetal group is preferred.

Examples of the alkyl group for X ₁ and X ₂ include a methyl group, an ethyl group, an n-propyl group, an i-propyl group, an n-butyl group, a 2-methylpropyl group, a 1-methylpropyl group, and a t-butyl group. Etc.
Examples of the fluorinated alkyl group for X ₁ and X ₂ include a monofluoromethyl group, a difluoromethyl group, a trifluoromethyl group, a 1-fluoroethyl group, a 1,2-difluoroethyl group, and 1,1,2 , 2-tetrafluoroethyl group and the like.
X ₁ is preferably a hydrogen atom, a fluorine atom, a methyl group and a trifluoromethyl group, and X ₂ is preferably a fluorine atom and / or a trifluoromethyl group.
Further, it is preferable that at least one of X ₁ and X ₂ are -CF _3.
Still further, preferred combinations of X ₁ and X ₂ include a case where X ₁ is a hydrogen atom and X ₂ is a trifluoromethyl group, a case where X ₁ is a fluorine atom, and X ₂ is a trifluoromethyl group. Can be mentioned.

  Examples of the repeating unit having a group represented by the general formula (Y) include a repeating unit represented by the following general formula (Y1).

R ₂ is a hydrogen atom, a fluorine atom, an alkyl group (preferably having 1 to 4 carbon atoms) or a fluorinated alkyl group (preferably having 1 to 4 carbon atoms).
Specific examples of R ² include, for example, methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, sec-butyl group, tert-butyl group, trifluoromethyl group, 2,2,2- Trifluoroethyl group, 3,3,3-trifluoropropyl group, 2,2,3,3,3-pentafluoropropyl group, 1,1,2,2,3,3,3-heptafluoropropyl group, etc. Can be illustrated.

n ₀ represents 1 to 5, preferably 1 or 2, and more preferably 1.
X ₃ is a single bond, —O—, —C (═O) —O—, —C (═O) —NH—, a linear, branched or cyclic alkylene group (preferably having 10 or less carbon atoms). , An aromatic ring group (such as a benzene ring, preferably 15 or less carbon atoms), and (n ₀ −1) hydrogen atoms are removed from a divalent group formed by combining at least two of these (n ₀ +1) ) -Valent group (preferably having 30 or less carbon atoms). Note that a hetero atom may be contained in the cyclic skeleton of the cyclic alkylene group or aromatic ring of X ₃ .
R ₃ is a single bond or a divalent hydrocarbon group (preferably having 1 to 4 carbon atoms), preferably a single bond, a methylene group, an ethylene group, a propylene group, a butylene group or an isopropylene group, and more A single bond and a methylene group are preferable.
At least one of X ₁ and X ₂ may be bonded to R ₃ to form a ring structure.
X ₁ , X ₂ and R ₁ are as defined above.

  Examples of the repeating unit having a group represented by the general formula (Y) include a repeating unit represented by the following general formula (Y2).

n represents an integer of 0 to 5, and m represents an integer of 0 to 2. R ₁ , R ₂ , X ₁ and X ₂ have the same meanings as described above.
Xa and Xb each independently represent a hydrogen atom, a fluorine atom, or an alkyl group (preferably having 1 to 4 carbon atoms), and may be bonded to each other to form a ring.
Examples of the alkyl group as Xa and _Xb include a methyl group, an ethyl group, an n-propyl group, an i-propyl group, an n-butyl group, a 2-methylpropyl group, a 1-methylpropyl group, and a t-butyl group. These groups may have other elements such as fluorine atoms or functional groups such as ester groups and ether groups in the chain.
It is preferable that at least one fluorine atom is contained in one or both of Xa and _Xb .

  Among the monomers giving the repeating unit represented by the general formula (Y2), particularly preferable compounds include the following compounds.

  Examples of the repeating unit having a group represented by the general formula (Y) include a repeating unit represented by the following general formula (Y3).

R ⁴ is a hydrogen atom, a fluorine atom, or a linear, branched or cyclic alkyl group or a fluorinated alkyl group (preferably having 20 or less carbon atoms, more preferably 12 or less carbon atoms).
R ₅ is a single bond or a divalent hydrocarbon group (preferably having 1 to 4 carbon atoms), preferably a single bond, a methylene group, an ethylene group, a propylene group, a butylene group or an isopropylene group, and more A single bond and a methylene group are preferable.
l is an integer of 1 to 5, preferably 1 to 3.
q is an integer of 0-4.
l + q = 5.
R ₁ , R ₂ , X ₁ and X ₂ have the same meanings as described above.

  Specific examples of the repeating unit represented by the general formula (Y3) are shown below, but are not limited thereto.

  It is also preferred that the resin (A) has a repeating unit represented by the following general formula (Y4).

R ₁ , R ₂ , R ₄ , R ₅ , X ₁ , X ₂ , l and q are each as defined above.
Q represents a 3- to 10-membered alicyclic structure.
X ₄ is a single bond, —O—, —C (═O) —O—, —C (═O) —O—R ₁₄ — or —C (═O) —NH—R ₁₄ —, ₁₄ is a single bond, linear, branched or cyclic alkylene group (preferably having 10 or less carbon atoms), and may have an ester group or an ether group in the chain of the alkylene group.

  Specific examples of the repeating unit represented by the general formula (Y4) are shown below, but are not limited thereto.

  Moreover, the repeating unit represented by the following general formula (Y5) is also preferable.

R ₁₁ represents a single bond or an alkylene group (preferably having 1 to 4 carbon atoms) which may be substituted with fluorine.
R ₈ and R ₉ each independently represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group.
R ₇ and R ₁₀ each independently represents a single bond, —O— or —C (R ₁₂ ) (R ₁₃ ) —.
R ₆ , R ₁₂ and R ₁₃ each independently represents a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group.
R ₂ and X ₄ are the same as described above.

Specific examples of the repeating unit represented by the general formula (Y5) are shown below, but are not limited thereto.
Y in the following represents a hydrogen atom.

  Moreover, the repeating unit represented by the following general formula (Y6) is also preferable.

R ₁₅ represents a linear or branched hydrocarbon group or a divalent hydrocarbon group having a cyclic hydrocarbon structure (preferably having 1 to 20 carbon atoms).
R ₁ , R ₂ , and X ₄ are the same as described above.

R ₁₅ is preferably a linear, branched or cyclic alkylene group (preferably having a carbon number of 20 or less), and any hydrogen atom in the alkylene group may be substituted with a cycloalkyl group. As the cycloalkyl group, those having 1 to 20 carbon atoms such as a cyclopentyl group, a cyclohexyl group, a cyclopentylmethyl group, a cyclopentylethyl group, a cyclopentylbutyl group, a cyclohexylmethyl group, a cyclohexylethyl group, a cyclohexylbutyl group, and an adamantyl group are preferable.
The ring structure that the group as R ₁₅ may have preferably has 4 to 10 carbon atoms, and particularly preferably has 5 to 7 alicyclic rings.
Specific examples of the repeating unit represented by the general formula (Y6) are shown below, but are not limited thereto.

The resin (A) may contain only one type of repeating unit having a group represented by the general formula (Y), or may contain two or more types.
The corresponding monomer for introducing the repeating unit having the group represented by the general formula (Y) into the resin can be synthesized by a known method. For example, the target compound and hexafluoroacetone can be synthesized by a Friedel-Crafts reaction.

The resin (A) may be composed of a repeating unit having the group represented by the general formula (Y) and another repeating unit, but is a copolymer having another repeating unit. Is preferred. The kind of other repeating unit is not particularly limited.
The content of the repeating unit having a group represented by the general formula (Y) is usually 5 to 90 mol%, preferably 10 to 80 mol%, particularly preferably 10 to 60 mol%, based on all repeating units. More preferably, it is 10-50 mol%.

The resin (A) contained in the composition of the present invention is a resin (acid-decomposable resin) whose solubility in an alkaline developer is increased by the action of an acid, and the action of an acid on the main chain and / or side chain of the resin. It has a group (hereinafter, also referred to as “acid-decomposable group”) that is decomposed by an alkali-soluble group.
The resin (A) is preferably insoluble or hardly soluble in an alkali developer.

The acid-decomposable group preferably has a structure protected with a group capable of decomposing and leaving an alkali-soluble group by the action of an acid.
The alkali-soluble group is not particularly limited as long as it is a group that dissociates and becomes an ion in an alkali developer. Preferred alkali-soluble groups include a carboxyl group, a fluorinated alcohol group (preferably hexafluoroisopropanol), and a sulfonic acid. Groups.
A preferable group as the acid-decomposable group is a group obtained by substituting the hydrogen atom of these alkali-soluble groups with a group capable of leaving with an acid.
Examples of the group leaving with an acid include -C (R ₃₆ ) (R ₃₇ ) (R ₃₈ ), -C (R ₃₆ ) (R ₃₇ ) (OR ₃₉ ), -C (R ₀₁ ) (R ₀₂ ). ) (OR ₃₉ ) and the like.
In the formula, R _{36 to} R ₃₉ each independently represents an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, or an alkenyl group. R ₃₆ and R ₃₇ may be bonded to each other to form a ring.
R _{01 and} R ₀₂ each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or an alkenyl group.
The acid-decomposable group is preferably a cumyl ester group, an enol ester group, an acetal ester group, a tertiary alkyl ester group or the like. More preferably, it is a tertiary alkyl ester group.

  The repeating unit having an acid-decomposable group that can be contained in the resin (A) is preferably a repeating unit represented by the following general formula (AI).

In general formula (AI),
Xa ₁ represents a hydrogen atom, a methyl group or a group represented by —CH ₂ —R ₉ . R ₉ represents a hydroxyl group or a monovalent organic group, and examples thereof include an alkyl group having 5 or less carbon atoms and an acyl group, preferably an alkyl group having 3 or less carbon atoms, and more preferably a methyl group. Xa ₁
Preferably represents a hydrogen atom, a methyl group, a trifluoromethyl group or a hydroxymethyl group.
T represents a single bond or a divalent linking group.
Rx _{1 to} Rx ₃ each independently represents an alkyl group (straight or branched) or a cycloalkyl group (monocyclic or polycyclic).
At least two of Rx _{1 to} Rx ₃ may combine to form a cycloalkyl group (monocyclic or polycyclic).

Examples of the divalent linking group for T include an alkylene group, —COO—Rt— group, —O—Rt— group, and the like. In the formula, Rt represents an alkylene group or a cycloalkylene group.
T is preferably a single bond or a —COO—Rt— group. Rt is preferably an alkylene group having 1 to 5 carbon atoms, more preferably a —CH ₂ — group or a — (CH ₂ ) ₃ — group.
The alkyl group of Rx _{1 to} Rx ₃ is preferably an alkyl group having 1 to 4 carbon atoms such as a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, or a t-butyl group.
Examples of the cycloalkyl group represented by Rx _{1 to} Rx ₃ include monocyclic cycloalkyl groups such as cyclopentyl group and cyclohexyl group, polycyclic cycloalkyl groups such as norbornyl group, tetracyclodecanyl group, tetracyclododecanyl group, and adamantyl group. Groups are preferred.
Examples of the cycloalkyl group formed by combining at least two of Rx _{1 to} Rx ₃ include a monocyclic cycloalkyl group such as a cyclopentyl group and a cyclohexyl group, a norbornyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, A polycyclic cycloalkyl group such as an adamantyl group is preferred. A monocyclic cycloalkyl group having 5 to 6 carbon atoms is particularly preferable.
It is preferable that Rx ₁ is a methyl group or an ethyl group, and Rx ₂ and Rx ₃ are bonded to form the above-described cycloalkyl group.
Each of the above groups may have a substituent. Examples of the substituent include an alkyl group (1 to 4 carbon atoms), a halogen atom, a hydroxyl group, an alkoxy group (1 to 4 carbon atoms), a carboxyl group, An alkoxycarbonyl group (C2-C6) etc. are mentioned, C8 or less is preferable.

  The content of the repeating unit having an acid-decomposable group as a total is preferably 20 to 70 mol%, more preferably 30 to 50 mol%, based on all repeating units in the resin.

Although the specific example of the repeating unit which has a preferable acid-decomposable group is shown below, this invention is not limited to this.
In specific examples, Rx and Xa ₁ represent a hydrogen atom, CH ₃ , CF ₃ , or CH ₂ OH. Rx
a and Rxb each represents an alkyl group having 1 to 4 carbon atoms. Z represents a substituent containing a polar group, and when there are a plurality of them, each is independent. Examples of the polar group for Z include the same groups as those described above for R ₁₀ in formula (2-1). p represents 0 or a positive integer.
Rxc in the following formula 12 represents an alkyl group having 1 to 4 carbon atoms or a cycloalkyl group (monocyclic or polycyclic having 3 to 10 carbon atoms which may contain a hetero atom).

  The resin (A) is a resin having at least one of the repeating unit represented by the general formula (1) and the repeating unit represented by the general formula (2) as the repeating unit represented by the general formula (AI). More preferably.

In formulas (1) and (2),
R ₁ and R ₃ each independently represent a hydrogen atom, a methyl group which may have a substituent, or a group represented by —CH ₂ —R ₉ . R ₉ represents a hydroxyl group or a monovalent organic group.
R ₂ , R ₄ , R ₅ and R ₆ each independently represents an alkyl group or a cycloalkyl group.
R represents an atomic group necessary for forming an alicyclic structure together with a carbon atom.

R ₁ preferably represents a hydrogen atom, a methyl group, a trifluoromethyl group or a hydroxymethyl group.

The alkyl group in R ₂ may be linear or branched, and may have a substituent.
The cycloalkyl group in R ₂ may be monocyclic or polycyclic and may have a substituent.
R ₂ is preferably an alkyl group, more preferably 1 to 10 carbon atoms, still more preferably 1
-5, and examples thereof include a methyl group and an ethyl group.

  R represents an atomic group necessary for forming an alicyclic structure together with a carbon atom. The alicyclic structure formed by R is preferably a monocyclic alicyclic structure, and the carbon number thereof is preferably 3 to 7, more preferably 5 or 6.

R ₃ is preferably a hydrogen atom or a methyl group, more preferably a methyl group.
The alkyl group in R ₄ , R ₅ and R ₆ may be linear or branched and may have a substituent. As the alkyl group, those having 1 to 4 carbon atoms such as methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group and t-butyl group are preferable.
The cycloalkyl group in R ₄ , R ₅ and R ₆ may be monocyclic or polycyclic and may have a substituent. The cycloalkyl group is preferably a monocyclic cycloalkyl group such as a cyclopentyl group or a cyclohexyl group, or a polycyclic cycloalkyl group such as a norbornyl group, a tetracyclodecanyl group, a tetracyclododecanyl group or an adamantyl group.

  The repeating unit represented by the general formula (2) is preferably a repeating unit represented by the following general formula (2-1).

In formula (2-1),
R < ₃ > -R < ₅ > is synonymous with the thing in General formula (2).
R ₁₀ represents a substituent containing a polar group. When a plurality of R ₁₀ are present, they may be the same as or different from each other. Examples of the substituent containing a polar group include a polar group itself such as a hydroxyl group, a cyano group, an amino group, an alkylamide group or a sulfonamide group, or a linear or branched alkyl group or cycloalkyl group having the polar group. An alkyl group having a hydroxyl group is preferable. More preferably, it is a branched alkyl group having a hydroxyl group. The branched alkyl group is preferably an isopropyl group.
p represents an integer of 0 to 15. p is preferably 0 to 2, more preferably 0 or 1.

The resin (A) preferably further contains a repeating unit having a lactone group.
Any lactone group can be used as long as it has a lactone structure, but it is preferably a 5- to 7-membered ring lactone structure, and forms a bicyclo structure or a spiro structure in the 5- to 7-membered ring lactone structure. The other ring structure is preferably condensed. It is more preferable to have a repeating unit having a lactone structure represented by any of the following general formulas (LC1-1) to (LC1-17). The lactone structure may be directly bonded to the main chain. Preferred lactone structures are (LC1-1), (LC1-4), (LC1-5), (LC1-
6), (LC1-13), (LC1-14), and (LC1-17). By using a specific lactone structure, LWR and development defects are improved.

The lactone structure moiety may or may not have a substituent (Rb ₂ ). Preferred substituents (Rb ₂ ) include an alkyl group having 1 to 8 carbon atoms, a cycloalkyl group having 4 to 7 carbon atoms, an alkoxy group having 1 to 8 carbon atoms, an alkoxycarbonyl group having 1 to 8 carbon atoms, and a carboxyl group. , Halogen atom, hydroxyl group, cyano group, acid-decomposable group and the like. More preferably, they are a C1-C4 alkyl group, a cyano group, and an acid-decomposable group. n ₂ represents an integer of 0-4. When n ₂ is 2 or more, the plurality of substituents (Rb ₂ ) may be the same or different. A plurality of substituents (Rb ₂ ) may be bonded to form a ring.

  The repeating unit having a lactone structure is preferably a repeating unit represented by the following general formula (AII).

In general formula (AII),
Rb ₀ represents a hydrogen atom, a halogen atom or an alkyl group having 1 to 4 carbon atoms. Preferred substituents that the alkyl group represented by Rb ₀ may have include a hydroxyl group and a halogen atom. Examples of the halogen atom for Rb ₀ include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom. Preferred are a hydrogen atom, a methyl group, a hydroxymethyl group, and a trifluoromethyl group, and a hydrogen atom and a methyl group are particularly preferred.
Ab represents a single bond, an alkylene group, a divalent linking group having a monocyclic or polycyclic alicyclic hydrocarbon structure, an ether group, an ester group, a carbonyl group, or a divalent linking group obtained by combining these. Preferably a single bond, -Ab ₁ -CO ₂ - is a divalent linking group represented by.
Ab ₁ is a linear, branched alkylene group, monocyclic or polycyclic cycloalkylene group, preferably a methylene group, an ethylene group, a cyclohexylene group, an adamantylene group or a norbornylene group.
V represents a group having a lactone structure. Specifically, for example, it represents a group having a structure represented by any of the general formulas (LC1-1) to (LC1-17).

Among the units represented by the general formula (AII), the following repeating units are particularly preferable as the repeating unit having a lactone group when Ab is a single bond. In specific examples, Rx represents H, CH ₃ , CH ₂ OH, or CF ₃ . By selecting an optimal lactone group, the pattern profile and the density dependency are improved.

  In order to further enhance the effect of the present invention, the resin (A) particularly preferably contains a repeating unit having a lactone structure represented by the following general formula (3).

In formula (3),
A represents an ester bond (a group represented by —COO—) or a group represented by —CONH—.
R ₀ represents an alkylene group, a cycloalkylene group, or a combination thereof independently when there are a plurality of R ₀ .
When there are a plurality of Z, each independently represents an ether bond, an ester bond, a carbonyl bond, an amide bond, a urethane bond, or a urea bond.
R ₈ represents a monovalent organic group having a lactone structure.
n is the repeating number of the structure represented by —R ₀ —Z— in the repeating unit represented by the formula (3), and represents an integer of 1 to 5.
R ₇ represents a hydrogen atom, a halogen atom or an alkyl group which may have a substituent.

The alkylene group and cycloalkylene group represented by R ₀ may have a substituent.
Z is preferably an ether bond or an ester bond, and particularly preferably an ester bond.

The alkyl group for R ₇ is preferably an alkyl group having 1 to 4 carbon atoms, more preferably a methyl group or an ethyl group, and particularly preferably a methyl group. The alkyl group in R ₇ may be substituted. Examples of the substituent include halogen atoms such as fluorine atom, chlorine atom and bromine atom, mercapto group, hydroxy group, methoxy group, ethoxy group, isopropoxy group, t -Acetoxy groups such as alkoxy groups such as butoxy group and benzyloxy group, acetyl groups and propionyl groups. R ₇ is preferably a hydrogen atom, a methyl group, a trifluoromethyl group, or a hydroxymethyl group.
Preferable chain alkylene group in R ₀ is preferably a chain alkylene having 1 to 10 carbon atoms, more preferably 1 to 5 carbon atoms, and examples thereof include a methylene group, an ethylene group, and a propylene group. Preferable cycloalkylene is cycloalkylene having 1 to 20 carbon atoms, and examples thereof include cyclohexylene, cyclopentylene, norbornylene, adamantylene and the like. In order to exhibit the effect of the present invention, a chain alkylene group is more preferable, and a methylene group is particularly preferable.

The substituent having a lactone structure represented by R ₈ is not limited as long as it has a lactone structure, and specific examples include lactones represented by general formulas (LC1-1) to (LC1-17). The structure is mentioned, Of these, the structure represented by (LC1-4) is particularly preferable. Further, n ₂ in (LC1-1) to (LC1-17) is more preferably 2 or less.
R ₈ is preferably a monovalent organic group having an unsubstituted lactone structure or a monovalent organic group having a lactone structure having a methyl group, a cyano group or an alkoxycarbonyl group as a substituent. A monovalent organic group having a lactone structure (cyanolactone) as is more preferable.

Specific examples of the repeating unit having a group having a lactone structure represented by the general formula (3) are shown below, but the present invention is not limited thereto.
In the following specific examples, R represents a hydrogen atom, an alkyl group which may have a substituent, or a halogen atom, and preferably a hydrogen atom, a methyl group, a hydroxymethyl group which is an alkyl group having a substituent, acetoxy Represents a methyl group.

  The repeating unit having a lactone structure is more preferably a repeating unit represented by the following general formula (3-1).

In general formula (3-1),
R ₇ , A, R ₀ , Z, and n are as defined in the general formula (3).
R ₉ independently represents an alkyl group, a cycloalkyl group, an alkoxycarbonyl group, a cyano group, a hydroxyl group or an alkoxy group, when there are a plurality of R _{9 s} , May be formed.
X represents an alkylene group, an oxygen atom or a sulfur atom.
m is the number of substituents and represents an integer of 0 to 5. m is preferably 0 or 1.

The alkyl group for R ₉ is preferably an alkyl group having 1 to 4 carbon atoms, more preferably a methyl group or an ethyl group, and most preferably a methyl group. Examples of the cycloalkyl group include cyclopropyl, cyclobutyl, cyclopentyl, and cyclohexyl groups. Examples of the ester group include a methoxycarbonyl group, an ethoxycarbonyl group, an n-butoxycarbonyl group, and a t-butoxycarbonyl group. Examples of the substituent include an alkoxy group such as a hydroxy group, a methoxy group, and an ethoxy group, and a halogen atom such as a cyano group and a fluorine atom.
R ₉ is more preferably a methyl group, a cyano group or an alkoxycarbonyl group, and even more preferably a cyano group.
Examples of the alkylene group for X include a methylene group and an ethylene group. X is preferably an oxygen atom or a methylene group, more preferably a methylene group.
When m is 1 or more, at least one R ₉ is preferably substituted at the α-position or β-position of the carbonyl group of the lactone, particularly preferably at the α-position.

  Specific examples of the repeating unit having a group having a lactone structure represented by General Formula (3-1) are shown below, but the present invention is not limited thereto. In the formula, R represents a hydrogen atom, an alkyl group which may have a substituent, or a halogen atom, preferably a hydrogen atom, a methyl group or a hydroxymethyl group or acetoxymethyl group which is an alkyl group having a substituent. Represents.

  The repeating unit having a lactone group usually has an optical isomer, but any optical isomer may be used.

As for the content rate of the repeating unit which has a lactone group, 15-60 mol% is preferable with respect to all the repeating units in resin, More preferably, it is 20-50 mol%, More preferably, it is 30-50 mol%.
In order to enhance the effect of the present invention, two or more kinds of lactone-containing repeating units selected from the general formula (3) can be used in combination. When using together, it is preferable to select and use 2 or more types from the lactone repeating unit in which n is 1 in general formula (3). Moreover, it is also preferable to use together the lactone repeating unit whose Ab is a single bond in General formula (AII), and the lactone repeating unit whose n is 1 among General formula (3).

The resin (A) preferably has a repeating unit having a hydroxyl group or a cyano group, in addition to the repeating unit having an acid-decomposable group and the repeating unit having a lactone structure having a hydroxyl group or a cyano group. This improves the substrate adhesion and developer compatibility. The repeating unit having a hydroxyl group or a cyano group is preferably a repeating unit having an alicyclic hydrocarbon structure substituted with a hydroxyl group or a cyano group, and preferably has no acid-decomposable group. The alicyclic hydrocarbon structure in the alicyclic hydrocarbon structure substituted with a hydroxyl group or a cyano group is preferably an adamantyl group, a diamantyl group, or a norbornyl group. Preferred examples of the alicyclic hydrocarbon structure substituted with a hydroxyl group or a cyano group include a monohydroxyadamantyl group, a dihydroxyadamantyl group, a monohydroxydiamantyl group, a dihydroxyadamantyl group, and a norbornyl group substituted with a cyano group.
Examples of the repeating unit having the atomic group include repeating units represented by the following general formulas (AIIa) to (AIIc).

In the general formulas (AIIa) to (AIIc),
R ₁ c represents a hydrogen atom, a methyl group, a trifluoromethyl group or a hydroxymethyl group.
R ₂ c to R ₄ c each independently represents a hydrogen atom or a hydroxyl group. However, at least one of R ₂ c to R ₄ c represents a hydroxyl group. Preferably, one or _two members out of R ₂ c to R ₄ c are a hydroxyl group and the remaining is a hydrogen atom. In general formula (AIIa), more preferably, _two of R ₂ c to R ₄ c are hydroxyl groups and the remaining are hydrogen atoms.

  The content of the repeating unit having a hydroxyl group is preferably from 5 to 40 mol%, more preferably from 5 to 30 mol%, still more preferably from 10 to 25 mol%, based on all repeating units in the resin (A).

  Specific examples of the repeating unit having a hydroxyl group are shown below, but the present invention is not limited thereto.

  The resin used in the actinic ray-sensitive or radiation-sensitive resin composition of the present invention may have a repeating unit having an alkali-soluble group that is different from the repeating unit having a group represented by the general formula (Y). Good. Examples of the alkali-soluble group include a carboxyl group, a sulfonamide group, a sulfonylimide group, and a bisulsulfonylimide group, and it is more preferable to have a repeating unit having a carboxyl group. By containing the repeating unit having an alkali-soluble group, the resolution in contact hole applications is increased. The repeating unit having an alkali-soluble group includes a repeating unit in which an alkali-soluble group is directly bonded to the main chain of the resin, such as a repeating unit of acrylic acid or methacrylic acid, or an alkali in the main chain of the resin through a linking group. Either a repeating unit to which a soluble group is bonded, or a polymerization initiator or chain transfer agent having an alkali-soluble group is used at the time of polymerization and introduced at the end of the polymer chain, and the linking group is monocyclic or polycyclic. It may have a cyclic hydrocarbon structure. Particularly preferred are repeating units of acrylic acid or methacrylic acid.

As for the content rate of the repeating unit which has an alkali-soluble group, 0-20 mol% is preferable with respect to all the repeating units in resin (A), More preferably, it is 3-15 mol%, More preferably, it is 5-10 mol%.

Specific examples of the repeating unit having an alkali-soluble group are shown below, but the present invention is not limited thereto. In specific examples, Rx represents H, CH ₃ , CH ₂ OH, or CF ₃ .

  The resin (A) of the present invention preferably further has a repeating unit that has an alicyclic hydrocarbon structure having no polar group and does not exhibit acid decomposability. This can reduce the elution of low molecular components from the resist film to the immersion liquid during immersion exposure. An example of such a repeating unit is a repeating unit represented by the general formula (4).

In general formula (4), R ₅ represents a hydrocarbon group having at least one cyclic structure and having neither a hydroxyl group nor a cyano group.
Ra represents a hydrogen atom, an alkyl group, or a —CH ₂ —O—Ra ₂ group. In the formula, Ra ₂ represents a hydrogen atom, an alkyl group or an acyl group. Ra is preferably a hydrogen atom, a methyl group, a hydroxymethyl group or a trifluoromethyl group, particularly preferably a hydrogen atom or a methyl group.

The cyclic structure possessed by R ₅ includes a monocyclic hydrocarbon group and a polycyclic hydrocarbon group. Examples of the monocyclic hydrocarbon group include a cycloalkyl group having 3 to 12 carbon atoms and a cycloalkenyl group having 3 to 12 carbon atoms. A preferable monocyclic hydrocarbon group is a monocyclic hydrocarbon group having 3 to 7 carbon atoms.

  The polycyclic hydrocarbon group includes a ring assembly hydrocarbon group and a bridged cyclic hydrocarbon group. Examples of the bridged cyclic hydrocarbon ring include a bicyclic hydrocarbon ring, a tricyclic hydrocarbon ring, and a tetracyclic hydrocarbon ring. The bridged cyclic hydrocarbon ring also includes a condensed cyclic hydrocarbon ring (for example, a condensed ring in which a plurality of 5- to 8-membered cycloalkane rings are condensed). Preferred examples of the bridged cyclic hydrocarbon ring include a norbornyl group and an adamantyl group.

These alicyclic hydrocarbon groups may have a substituent, and preferable substituents include a halogen atom, an alkyl group, a hydroxyl group protected with a protecting group, an amino group protected with a protecting group, and the like. . Preferred halogen atoms include bromine, chlorine and fluorine atoms, and preferred alkyl groups include methyl, ethyl, butyl and t-butyl groups. The above alkyl group may further have a substituent, and examples of the substituent that may further have a halogen atom, an alkyl group, a hydroxyl group protected with a protective group, and an amino group protected with a protective group Can be mentioned.

  Examples of the protecting group include an alkyl group, a cycloalkyl group, an aralkyl group, a substituted methyl group, a substituted ethyl group, an alkoxycarbonyl group, and an aralkyloxycarbonyl group. Preferred alkyl groups include alkyl groups having 1 to 4 carbon atoms, preferred substituted methyl groups include methoxymethyl, methoxythiomethyl, benzyloxymethyl, t-butoxymethyl, 2-methoxyethoxymethyl groups, and preferred substituted ethyl groups. 1-ethoxyethyl, 1-methyl-1-methoxyethyl, preferred acyl groups include formyl, acetyl, propionyl, butyryl, isobutyryl, valeryl, pivaloyl groups, etc., aliphatic acyl groups having 1 to 6 carbon atoms, alkoxycarbonyl Examples of the group include an alkoxycarbonyl group having 1 to 4 carbon atoms.

The content of the repeating unit having an alicyclic hydrocarbon structure having no polar group and not exhibiting acid decomposability is preferably 0 to 40 mol%, more preferably, based on all repeating units in the resin (A). 0 to 20 mol%.
Specific examples of the repeating unit having an alicyclic hydrocarbon structure having no polar group and not exhibiting acid decomposability are shown below, but the present invention is not limited thereto. In the formula, Ra represents H, CH ₃ , CH ₂ OH, or CF ₃ .

  Resins used in the actinic ray-sensitive or radiation-sensitive resin composition of the present invention include, in addition to the above repeating structural units, dry etching resistance, standard developer suitability, substrate adhesion, resist profile, and general resists. Various repeating structural units can be included for the purpose of adjusting required properties such as resolution, heat resistance, and sensitivity.

  Examples of such repeating structural units include, but are not limited to, repeating structural units corresponding to the following monomers.

  Thereby, performance required for the resin used in the actinic ray-sensitive or radiation-sensitive resin composition of the present invention, in particular, (1) solubility in coating solvent, (2) film-forming property (glass transition point), Fine adjustments such as (3) alkali developability, (4) film slippage (selection of hydrophilicity / hydrophobicity, alkali-soluble group), (5) adhesion of unexposed part to substrate, (6) dry etching resistance, etc. can be made. .

  As such a monomer, for example, a compound having one addition polymerizable unsaturated bond selected from acrylic acid esters, methacrylic acid esters, acrylamides, methacrylamides, allyl compounds, vinyl ethers, vinyl esters, etc. Etc.

  In addition, any addition-polymerizable unsaturated compound that can be copolymerized with monomers corresponding to the above various repeating structural units may be copolymerized.

  In the resin (A) used in the actinic ray-sensitive or radiation-sensitive resin composition of the present invention, the content molar ratio of each repeating structural unit is the resistance to dry etching of a resist, suitability for standard developer, substrate adhesion, resist profile, Furthermore, it is appropriately set in order to adjust the resolution, heat resistance, sensitivity, etc., which are general required performances of the resist.

  Resin used in the actinic ray-sensitive or radiation-sensitive resin composition of the present invention from the viewpoint of transparency to ArF light when the actinic ray-sensitive or radiation-sensitive resin composition of the present invention is for ArF exposure (A) preferably has no aromatic group.

The resin (A) used in the actinic ray-sensitive or radiation-sensitive resin composition of the present invention is preferably one in which all repeating units are composed of (meth) acrylate repeating units. In this case, all of the repeating units are methacrylate repeating units, all of the repeating units are acrylate repeating units, or all of the repeating units are methacrylate repeating units and acrylate repeating units. Although it can be used, the acrylate-based repeating unit is preferably 50 mol% or less of the total repeating units.
Moreover, the alicyclic hydrocarbon substituted by the (meth) acrylate type repeating unit 20-50 mol% which has an acid-decomposable group, the (meth) acrylate type repeating unit 20-50 mol% which has a lactone group, and a hydroxyl group or a cyano group. A copolymer containing 5 to 30 mol% of a (meth) acrylate-based repeating unit having a structure and further containing 0 to 20 mol% of another (meth) acrylate-based repeating unit is also preferred.

The resin (A) of the present invention can be synthesized according to a conventional method (for example, radical polymerization). For example, as a general synthesis method, a monomer polymerization method in which a monomer species and an initiator are dissolved in a solvent and the polymerization is performed by heating, and a solution of the monomer species and the initiator is dropped into the heating solvent over 1 to 10 hours. The dropping polymerization method is added, and the dropping polymerization method is preferable. Examples of the reaction solvent include ethers such as tetrahydrofuran, 1,4-dioxane and diisopropyl ether, ketones such as methyl ethyl ketone and methyl isobutyl ketone, ester solvents such as ethyl acetate, amide solvents such as dimethylformamide and dimethylacetamide, Furthermore, the solvent which melt | dissolves the composition of this invention like the below-mentioned propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, and cyclohexanone is mentioned. More preferably, the polymerization is performed using the same solvent as the solvent used in the composition of the present invention. Thereby, generation | occurrence | production of the particle at the time of a preservation | save can be suppressed.
The polymerization reaction is preferably performed in an inert gas atmosphere such as nitrogen or argon. As a polymerization initiator, a commercially available radical initiator (azo initiator, peroxide, etc.) is used to initiate the polymerization. As the radical initiator, an azo initiator is preferable, and an azo initiator having an ester group, a cyano group, or a carboxyl group is preferable. Preferred examples of the initiator include azobisisobutyronitrile, azobisdimethylvaleronitrile, dimethyl 2,2′-azobis (2-methylpropionate) and the like. If desired, an initiator is added or added in portions, and after completion of the reaction, it is put into a solvent and a desired polymer is recovered by a method such as powder or solid recovery. The concentration of the reaction (the concentration of the solute in the reaction solution) is 5 to 50% by mass, preferably 10 to 30% by mass. The reaction temperature is usually 10 ° C to 150 ° C, preferably 30 ° C to 120 ° C, more preferably 60-100 ° C.

Resin (A) has few impurities such as metals, and preferably contains 0 to 10% by mass of residual monomer and oligomer components, more preferably 0 to 5% by mass, and even more preferably 0 to 1% by mass. preferable. In this respect, it is preferable to perform purification by the following method or the like.
After completion of the reaction, the mixture is allowed to cool to room temperature and purified. Purification can be accomplished by a liquid-liquid extraction method that removes residual monomers and oligomer components by combining water and an appropriate solvent, and a purification method in a solution state such as ultrafiltration that extracts and removes only those having a specific molecular weight or less. , Reprecipitation method that removes residual monomer by coagulating resin in poor solvent by dripping resin solution into poor solvent and purification in solid state such as washing filtered resin slurry with poor solvent A normal method such as a method can be applied. For example, the resin is precipitated as a solid by contacting a solvent (poor solvent) in which the resin is hardly soluble or insoluble in a volume amount of 10 times or less, preferably 10 to 5 times that of the reaction solution.

  The solvent (precipitation or reprecipitation solvent) used in the precipitation or reprecipitation operation from the polymer solution may be a poor solvent for the polymer, and may be a hydrocarbon, halogenated hydrocarbon, nitro, depending on the type of polymer. A compound, ether, ketone, ester, carbonate, alcohol, carboxylic acid, water, a mixed solvent containing these solvents, and the like can be appropriately selected for use. Among these, as a precipitation or reprecipitation solvent, a solvent containing at least an alcohol (particularly methanol or the like) or water is preferable.

  The amount of the precipitation or reprecipitation solvent used can be appropriately selected in consideration of efficiency, yield, and the like, but generally 100 to 10000 parts by mass, preferably 200 to 2000 parts by mass with respect to 100 parts by mass of the polymer solution, More preferably, it is 300-1000 mass parts.

  The temperature for precipitation or reprecipitation can be appropriately selected in consideration of efficiency and operability, but is usually about 0 to 50 ° C., preferably around room temperature (for example, about 20 to 35 ° C.). The precipitation or reprecipitation operation can be performed by a known method such as a batch method or a continuous method using a conventional mixing vessel such as a stirring tank.

  The precipitated or re-precipitated polymer is usually subjected to conventional solid-liquid separation such as filtration and centrifugation, and dried before use. Filtration is performed using a solvent-resistant filter medium, preferably under pressure. Drying is performed at a temperature of about 30 to 100 ° C., preferably about 30 to 50 ° C. under normal pressure or reduced pressure (preferably under reduced pressure).

  The resin may be once deposited and separated, and then dissolved again in a solvent, and the resin may be brought into contact with a hardly soluble or insoluble solvent. That is, after completion of the radical polymerization reaction, a solvent in which the polymer is hardly soluble or insoluble is brought into contact, the resin is precipitated (step a), the resin is separated from the solution (step b), and dissolved again in the solvent. (Step c), and then contact the resin solution A with a solvent in which the resin is hardly soluble or insoluble in a volume amount less than 10 times that of the resin solution A (preferably 5 times or less volume). This may be a method including precipitating a resin solid (step d) and separating the precipitated resin (step e).

The weight average molecular weight of the resin (A) of the present invention is preferably 1,000 to 200,000, more preferably 2,000 to 20,000, still more preferably 3, as a polystyrene conversion value by GPC method. 000 to 15,000, particularly preferably 3,000 to 10,000. By setting the weight average molecular weight within the above range, it is possible to prevent heat resistance improvement, dry etching resistance deterioration prevention, developability deterioration, film formation deterioration due to increased viscosity, and the like.
The dispersity (molecular weight distribution) is usually 1 to 3, preferably 1 to 2.6, more preferably 1 to 2, and particularly preferably 1.4 to 2.0. The smaller the molecular weight distribution, the better the resolution and the resist shape, and the smoother the side wall of the resist pattern, the better the roughness.

50-99 mass% is preferable with respect to the total solid, and, as for the compounding quantity in the actinic-ray-sensitive or radiation-sensitive resin composition of resin (A) of this invention, More preferably, it is 60-95 mass%.
In addition, the resins of the present invention may be used alone or in combination.

(C) Resin having a repeating unit having a polarity converting group and having at least one of a fluorine atom and a silicon atom The actinic ray-sensitive or radiation-sensitive resin composition of the present invention has at least one polarity converting group. Resin (C) which has a repeating unit (c) and has at least any one of a fluorine atom and a silicon atom is contained. The resin (C) is hydrophobic, but the addition of the resin (C) is particularly preferable from the viewpoint of reducing development defects.

Here, the polar conversion group is a group that decomposes by the action of an alkali developer and increases the solubility in the alkali developer. For example, a lactone group, a carboxylic acid ester group (—COO—), an acid anhydride group (—C (O) OC (O) —), an acid imide group (—NHCONH—), a carboxylic acid thioester group (—COS—) , Carbonate ester group (—OC (O) O—), sulfate ester group (—OSO ₂ O—), sulfonate ester group (—SO ₂ O—) and the like.
In addition, since the ester group directly bonded to the main chain of the repeating unit, such as in acrylate, has a poor function of being decomposed by the action of the alkali developer and increasing the solubility in the alkali developer, the polar group in the present invention Is not included.
Examples of the repeating unit (c) include a repeating unit represented by the formula (K0).

In the formula, R _k1 represents a hydrogen atom, a halogen atom, a hydroxyl group, an alkyl group, a cycloalkyl group, an aryl group, or a polarity converting group.
R _k2 represents an alkyl group, a cycloalkyl group, an aryl group, or a polarity converting group.
However, at least one of R _k1 and R _k2 has a polarity converting group.
In addition, as described above, the ester group directly connected to the main chain of the repeating unit represented by the general formula (K0) is not included in the polar conversion group in the present invention.

  The polar conversion group is preferably a group represented by X in the partial structure represented by the general formula (KA-1) or (KB-1).

X in the general formula (KA-1) or (KB-1) is a carboxylic acid ester group: —COO—, an acid anhydride group: —C (O) OC (O) —, an acid imide group: —NHCONH—, Carboxylic acid thioester group: —COS—, carbonate ester group: —OC (O) O—, sulfate ester group: —OSO ₂ O—, sulfonate ester group: —SO ₂ O—.
Y ¹ and Y ² may be the same or different and each represents an electron-withdrawing group.
The repeating unit (c) has a group having a partial structure represented by the general formula (KA-1) or (KB-1), and thus has a preferred polarity conversion group, but the general formula (KA-1 In the case where the partial structure does not have a bond as in the case of the partial structure represented by (KB-1) when Y ¹ and Y ² are monovalent, The group having a partial structure is a group having a monovalent or higher group obtained by removing at least one arbitrary hydrogen atom in the partial structure. The partial structure represented by the general formula (KA-1) or (KB-1) is linked to the main chain of the resin (C) through a substituent at an arbitrary position.

The partial structure represented by the general formula (KA-1) is a structure that forms a ring structure with the group as X.
X in the general formula (KA-1) is preferably a carboxylic acid ester group (that is, when a lactone ring structure is formed as KA-1), an acid anhydride group, or a carbonate ester group. More preferably, it is a carboxylic acid ester group.
The ring structure represented by the general formula (KA-1) may have a substituent, for example, may have nka substituents Z _ka1 .
Z _ka1 independently represents an alkyl group, a cycloalkyl group, an ether group, a hydroxyl group, an amide group, an aryl group, a lactone ring group, or an electron withdrawing group, when there are a plurality of them.
Z _ka1 may be linked to form a ring. Examples of the ring formed by linking Z _{ka1 to} each other include a cycloalkyl ring and a hetero ring (such as a cyclic ether ring and a lactone ring).
nka represents an integer of 0 to 10. Preferably it is an integer of 0 to 8, more preferably an integer of 0 to 5, more preferably an integer of 1 to 4, and most preferably an integer of 1 to 3.

The electron withdrawing group as Z _{ka1 is the same} as the electron withdrawing group as Y ¹ and Y ² described later.
The electron withdrawing group may be substituted with another electron withdrawing group.

Z _ka1 is preferably an alkyl group, a cycloalkyl group, an ether group, a hydroxyl group, or an electron withdrawing group, more preferably an alkyl group, a cycloalkyl group, or an electron withdrawing group. The ether group is preferably an ether group substituted with an alkyl group or a cycloalkyl group, that is, an alkyl ether group. The electron withdrawing group has the same meaning as described above.
Examples of the halogen atom as Z _ka1 include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, and a fluorine atom is preferable.
The alkyl group as Z _ka1 may have a substituent and may be linear or branched. As a linear alkyl group, Preferably it is C1-C30, More preferably, it is 1-20, For example, a methyl group, an ethyl group, n-propyl group, n-butyl group, sec-butyl group, t-butyl Group, n-pentyl group, n-hexyl group, n-heptyl group, n-octyl group, n-nonyl group, n-decanyl group and the like. As a branched alkyl group, Preferably it is C3-C30, More preferably, it is 3-20, for example, i-propyl group, i-butyl group, t-butyl group, i-pentyl group, t-pentyl group, Examples include i-hexyl group, t-hexyl group, i-heptyl group, t-heptyl group, i-octyl group, t-octyl group, i-nonyl group, t-decanoyl group and the like. C1-C4 things, such as a methyl group, an ethyl group, n-propyl group, i-propyl group, n-butyl group, i-butyl group, t-butyl group, are preferable.
The cycloalkyl group as Z _ka1 may have a substituent, may be monocyclic, polycyclic, or bridged. For example, the cycloalkyl group may have a bridged structure. The monocyclic type is preferably a cycloalkyl group having 3 to 8 carbon atoms, and examples thereof include a cyclopropyl group, a cyclopentyl group, a cyclohexyl group, a cyclobutyl group, and a cyclooctyl group. Examples of the polycyclic type include groups having a bicyclo, tricyclo, tetracyclo structure or the like having 5 or more carbon atoms, and a cycloalkyl group having 6 to 20 carbon atoms is preferable. For example, an adamantyl group, norbornyl group, isobornyl group, Examples thereof include a camphanyl group, a dicyclopentyl group, an α-pinel group, a tricyclodecanyl group, a tetocyclododecyl group, an androstanyl group, and the following structures. A part of carbon atoms in the cycloalkyl group may be substituted with a hetero atom such as an oxygen atom.

Preferred examples of the alicyclic moiety include adamantyl group, noradamantyl group, decalin group, tricyclodecanyl group, tetracyclododecanyl group, norbornyl group, cedrol group, cyclohexyl group, cycloheptyl group, cyclooctyl group, cyclodecanyl group. And cyclododecanyl group. More preferred are an adamantyl group, a decalin group, a norbornyl group, a cedrol group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, a cyclodecanyl group, a cyclododecanyl group, and a tricyclodecanyl group.
Examples of the substituent of these alicyclic structures include an alkyl group, a halogen atom, a hydroxyl group, an alkoxy group, a carboxyl group, and an alkoxycarbonyl group. The alkyl group is preferably a lower alkyl group such as a methyl group, an ethyl group, a propyl group, an isopropyl group, or a butyl group, and more preferably a methyl group, an ethyl group, a propyl group, or an isopropyl group. Preferred examples of the alkoxy group include those having 1 to 4 carbon atoms such as a methoxy group, an ethoxy group, a propoxy group, and a butoxy group. Examples of the substituent that the alkyl group and the alkoxy group may have include a hydroxyl group, a halogen atom, and an alkoxy group (preferably having 1 to 4 carbon atoms).

  Further, further substituents that the above group may have include hydroxyl group, halogen atom (fluorine, chlorine, bromine, iodine), nitro group, cyano group, the above alkyl group, methoxy group, ethoxy group, hydroxy group. Alkoxy groups such as ethoxy group, propoxy group, hydroxypropoxy group, n-butoxy group, isobutoxy group, sec-butoxy group and t-butoxy group, alkoxycarbonyl groups such as methoxycarbonyl group and ethoxycarbonyl group, benzyl group and phenethyl group Aralkyl group such as cumyl group, aralkyloxy group, formyl group, acetyl group, butyryl group, benzoyl group, cyanamyl group, acyl group such as valeryl group, acyloxy group such as butyryloxy group, the above alkenyl group, vinyloxy group, propenyl Such as oxy group, allyloxy group, butenyloxy group, etc. Rukeniruokishi group, said aryl group, an aryloxy group such as phenoxy group, and an aryloxycarbonyl group such as benzoyloxy group.

X in the general formula (KA-1) is a carboxylic acid ester group, and the partial structure represented by the general formula (KA-1) is preferably a lactone ring, and more preferably a 5- to 7-membered lactone ring.
In addition, as in the following (KA-1-1) to (KA-1-17), a 5- to 7-membered lactone ring as a partial structure represented by the general formula (KA-1) has a bicyclo structure, a spiro It is preferred that other ring structures are condensed in a form that forms the structure.
As for the peripheral ring structure to which the ring structure represented by the general formula (KA-1) may be bonded, for example, those in the following (KA-1-1) to (KA-1-17), or The thing according to can be mentioned.

  As a structure containing a lactone ring structure represented by the general formula (KA-1), a structure represented by any one of the following (KA-1-1) to (KA-1-17) is more preferable. The lactone structure may be directly bonded to the main chain. Preferred structures include (KA-1-1), (KA-1-4), (KA-1-5), (KA-1-6), (KA-1-13), (KA-1- 14) and (KA-1-17).

The structure containing the lactone ring structure may or may not have a substituent. Preferable substituents include those similar to the substituents that the ring structure represented by the general formula (KA-1) may have.

  Some lactone structures have optically active substances, but any optically active substance may be used. One optically active substance may be used alone or a plurality of optically active substances may be mixed and used. When one kind of optically active substance is mainly used, the optical purity (ee) is preferably 90 or more, more preferably 95 or more, and most preferably 98 or more.

  Preferred examples of X in the general formula (KB-1) include a carboxylic acid ester group (—COO—).

Y ¹ and Y ² in formula (KB-1) each independently represent an electron-withdrawing group.

  The electron withdrawing group is a partial structure represented by the following formula (EW). * In the formula (EW) represents a bond directly connected to (KA-1) or a bond directly connected to X in (KB-1).

In formula (EW),
n _ew is the number of repeating linking groups represented by —C (R _ew1 ) (R _ew2 ) — and represents an integer of 0 or 1. When n _ew is 0, it represents a single bond, indicating that Y _ew1 is directly bonded.
Y _ew1 represents a halogen atom, a cyano group, a nitrile group, a nitro group, a halo (cyclo) alkyl group represented by —C (R _f1 ) (R _f2 ) —R _f3 , a haloaryl group, an oxy group, a carbonyl group, a sulfonyl group Examples thereof include a group, a sulfinyl group, and a combination thereof. The electron-withdrawing group may have the following structure, for example. The “halo (cyclo) alkyl group” represents an alkyl group or a cycloalkyl group that is at least partially halogenated. R _ew3 and R _ew4 each independently represent an arbitrary structure. R _ew3 and R _ew4 may have any structure, and the partial structure represented by the formula (EW) may have an electron withdrawing property, and may be linked to, for example, the main chain of the resin. An alkyl group and a fluorinated alkyl group;

When Y _ew1 is a divalent or higher group, the remaining bond forms a bond with an arbitrary atom or substituent. At least one group of Y _ew1 , R _ew1 , and R _ew2 may be connected to the main chain of the resin (C) through a further substituent.
Y _ew1 is preferably a halogen atom, or a halo (cyclo) alkyl group or haloaryl group represented by —C (R _f1 ) (R _f2 ) —R _f3 .
R _ew1 and R _ew2 each independently represents an arbitrary substituent, for example, a hydrogen atom, an alkyl group, a cycloalkyl group, or an aryl group.
At least two of R _ew1 , R _ew2 and Y _ew1 may be connected to each other to form a ring.

Here, R _f1 represents a halogen atom, a perhaloalkyl group, a perhalocycloalkyl group, or a perhaloaryl group, more preferably a fluorine atom, a perfluoroalkyl group or a perfluorocycloalkyl group, still more preferably a fluorine atom or a trialkyl group. Represents a fluoromethyl group.
R _f2 and R _f3 each independently represent a hydrogen atom, a halogen atom or an organic group, and R _f2 and R _f3 may be linked to form a ring. Examples of the organic group include an alkyl group, a cycloalkyl group, and an alkoxy group. More preferably, R _f2 represents the same group as R _f1 or is linked to R _f3 to form a ring.
R _{f1 to} R _f3 may be linked to form a ring, and examples of the ring formed include a (halo) cycloalkyl ring and a (halo) aryl ring.
Examples of the (halo) alkyl group in R _{f1 to} R _f3 include the alkyl group in Z _ka1 described above and a structure in which this is halogenated.
Examples of the (per) halocycloalkyl group and the (per) haloaryl group in R _{f1 to} R _f3 or a ring formed by linking R _f2 and R _f3 include the above-described cycloalkyl group in Z _ka1 is a halogen atom. phased structure, more preferably _{-C (n) F (2n-} 2) fluoroalkyl group represented by H, and include perfluoro aryl group represented by _{-C (n) F (n-} 1) It is done. Although carbon number n is not specifically limited here, the thing of 5-13 is preferable and 6 is more preferable.

The ring that may be formed by linking at least two of R _ew1 , R _ew2, and Y _ew1 is preferably a cycloalkyl group or a heterocyclic group, and the heterocyclic group is preferably a lactone ring group. Examples of the lactone ring include structures represented by the above formulas (KA-1-1) to (KA-1-17).

In the repeating unit (c), a plurality of partial structures represented by the general formula (KA-1), a plurality of partial structures represented by the general formula (KB-1), or a general formula (KA- You may have both the partial structure of 1) and general formula (KB-1).
Note that part or all of the partial structure of the general formula (KA-1) may also serve as an electron withdrawing group as Y ¹ or Y ² in the general formula (KB-1). For example, when X in the general formula (KA-1) is a carboxylic acid ester group, the carboxylic acid ester group functions as an electron withdrawing group as Y ¹ or Y ² in the general formula (KB-1). There is also a possibility.

Even if the repeating unit (c) is a repeating unit (c ′) having at least one of a fluorine atom and a silicon atom and a polarity converting group on one side chain, it has a polarity converting group, and Even a repeating unit (c *) having no fluorine atom and silicon atom has a polarity converting group on one side chain, and on a side chain different from the side chain in the same repeating unit, Although it may be a repeating unit (c ″) having at least one of a fluorine atom and a silicon atom, the resin (C) more preferably has a repeating unit (c ′) as the repeating unit (c).
In addition, when resin (C) has a repeating unit (c *), it is preferable that it is a copolymer with the repeating unit (repeating unit (c1) mentioned later) which has at least any one of a fluorine atom and a silicon atom. In the repeating unit (c ″), the side chain having a polarity converting group and the side chain having at least one of a fluorine atom and a silicon atom are bonded to the same carbon atom in the main chain. It is preferable to have a positional relationship as shown in Formula 4. In the formula, B1 represents a partial structure having a polar conversion group, and B2 represents a partial structure having at least one of a fluorine atom and a silicon atom.

  In the repeating unit (c *) and the repeating unit (c ″), the polar conversion group is more preferably a partial structure represented by —COO— in the structure represented by the general formula (KA-1).

When the polarity converting group is decomposed by the action of the alkali developer and the polarity is changed, the receding contact angle with water of the resin composition film after alkali development can be lowered.
The receding contact angle with water of the resin composition film after alkali development is preferably 50 ° or less, more preferably 40 ° or less at the temperature at the time of exposure, usually room temperature 23 ± 3 ° C. and humidity 45 ± 5%. More preferably, it is 35 ° or less, and most preferably 30 ° or less.
The receding contact angle is a contact angle measured when the contact line at the droplet-substrate interface recedes, and is useful for simulating the ease of movement of the droplet in a dynamic state. It is generally known. In simple terms, it can be defined as the contact angle when the droplet interface recedes when the droplet discharged from the needle tip is deposited on the substrate and then sucked into the needle again. It can be measured by using a contact angle measuring method generally called an expansion / contraction method.
The hydrolysis rate of the resin (C) with respect to the alkaline developer is preferably 0.001 nm / sec or more, more preferably 0.01 nm / sec or more, and further preferably 0.1 nm / sec or more. Most preferably, it is 1 nm / sec or more.
Here, the hydrolysis rate of the resin (C) with respect to the alkaline developer was 23.degree. C. TMAH (tetramethylammonium hydroxide aqueous solution) (2.38 mass%), and the resin film was formed only with the resin (C). This is the rate at which the film thickness decreases.

  The resin (C) of the present invention is preferably a resin (C1) containing a repeating unit (c) having at least two or more polar conversion groups and having at least one of a fluorine atom and a silicon atom. .

  When the repeating unit (c) has at least two polar changing groups, the repeating unit (c) preferably has a group having a partial structure having two polar changing groups represented by the following general formula (KY-1). Note that when the structure represented by the general formula (KY-1) does not have a bond, it is a group having a monovalent or higher valent group in which at least one arbitrary hydrogen atom in the structure is removed.

In general formula (KY-1),
R _ky1 and R _ky4 are each independently a hydrogen atom, halogen atom, alkyl group, cycloalkyl group, carbonyl group, carbonyloxy group, oxycarbonyl group, ether group, hydroxyl group, cyano group, amide group, or aryl group Represents. Alternatively, R _ky1 and R _ky4 may be bonded to the same atom to form a double bond. For example, R _ky1 and R _ky4 are bonded to the same oxygen atom to form a part of a carbonyl group (= O). May be formed.
R _ky2 and R _ky3 are each independently an electron withdrawing group, or R _ky1 and R _ky2 are linked to form a lactone ring and R _ky3 is an electron withdrawing group. As the lactone ring to be formed, the structures (KA-1-1) to (KA-1-17) are preferable. Examples of the electron withdrawing group include those similar to Y ₁ and Y ₂ in the formula (KB-1), preferably a halogen atom or —C (R _f1 ) (R _f2 ) —R _f3 . And a halo (cyclo) alkyl group or a haloaryl group. Preferably R _ky3 halogen atom _{or,, -C (R f1) (} R f2) halo (cyclo) alkyl or haloaryl group represented by -R _f3, lactone ring linked R _ky2 and R _ky1 Or an electron withdrawing group having no halogen atom.
R _ky1 , R _ky2 and R _ky4 may be connected to each other to form a monocyclic or polycyclic structure.

Specific examples of R _ky1 and R _ky4 include the same groups as Z _ka1 in formula (KA-1).
As the lactone ring formed by linking R _ky1 and R _ky2 , the structures (KA-1-1) to (KA-1-17) are preferable. Examples of the electron withdrawing group include those similar to Y ₁ and Y ₂ in the formula (KB-1).

  The structure represented by the general formula (KY-1) is more preferably a structure represented by the following general formula (KY-2). Note that the structure represented by the general formula (KY-2) is a group having a monovalent or higher group obtained by removing at least one arbitrary hydrogen atom in the structure.

In formula (KY-2),
R _{ky6 to} R _ky10 are each independently a hydrogen atom, halogen atom, alkyl group, cycloalkyl group, carbonyl group, carbonyloxy group, oxycarbonyl group, ether group, hydroxyl group, cyano group, amide group, or aryl. Represents a group.
Two or more of R _{ky6 to} R _ky10 may be connected to each other to form a monocyclic or polycyclic structure.
R _ky5 represents an electron withdrawing group. Examples of the electron withdrawing group include the same groups as those described above for Y ₁ and Y ₂ , preferably a halogen atom or halo (cyclo) represented by —C (R _f1 ) (R _f2 ) —R _f3. An alkyl group or a haloaryl group;
Specific examples of R _{ky5 to} R _ky10 include the same groups as Z _ka1 in formula (KA-1).

  The structure represented by the formula (KY-2) is more preferably a partial structure represented by the following general formula (KY-3).

In formula (KY-3),
Z _ka1 and nka each have the same meaning as in the general formula (KA-1). R _ky5 is synonymous with the formula (KY-2).
L _ky represents an alkylene group, an oxygen atom or a sulfur atom. _Examples of the alkylene group for L _ky include a methylene group and an ethylene group. L _ky is preferably an oxygen atom or a methylene group, and more preferably a methylene group.
The repeating unit (c) is not limited as long as it is a repeating unit obtained by polymerization such as addition polymerization, condensation polymerization, addition condensation, etc., but is a repeating unit obtained by addition polymerization of a carbon-carbon double bond. Preferably there is. Examples include acrylate-based repeating units (including those having substituents at the α-position and β-position), styrene-based repeating units (including those having substituents at the α-position and β-position), vinyl ether-based repeating units, norbornene-based Repeating units, maleic acid derivatives (maleic anhydride and derivatives thereof, maleimides, etc.), and the like, acrylate-based repeating units, styrene-based repeating units, vinyl ether-based repeating units, norbornene-based repeating units Preferred are acrylate repeat units, vinyl ether repeat units, and norbornene repeat units, with acrylate repeat units being most preferred.

  The more specific structure of the repeating unit (c) is preferably a repeating unit having the partial structure shown below.

In general formulas (ca-2) and (cb-2),
Z ₁ each independently represents a single bond, an ether bond, an ester bond, an amide bond, a urethane bond or a urea bond.
Z ₂ each independently represents a chain or cyclic alkylene group.
Ta and Tb are each independently an alkyl group, a cycloalkyl group, an alkoxy group, a nitrile group, a hydroxyl group, an amide group, an aryl group or an electron withdrawing group (Y ¹ and Y in the general formula (KB-1)). ² is synonymous with the electron withdrawing group as ² . When there are a plurality of Tas, Tas may be bonded to form a ring.
Tc represents a hydrogen atom, an alkyl group, a cycloalkyl group, a nitrile group, a hydroxyl group, an amide group, an aryl group or an electron withdrawing group (electron withdrawing as Y ¹ and Y ² in the general formula (KB-1)) It is synonymous with a sex group.
L each independently represents a carbonyl group, a carbonyloxy group or an ether group.
* Represents a bond to the main chain of the resin.
m represents an integer of 1 to 28.
n represents an integer of 0 to 11.
p represents an integer of 0 to 5.
q represents an integer of 0 to 5.
r represents an integer of 0 to 5.

In general formula (2),
R ₂ represents a chain or cyclic alkylene group, and when there are a plurality of R ₂ groups, they may be the same or different.
R ₃ represents a linear, branched or cyclic hydrocarbon group in which part or all of the hydrogen atoms on the constituent carbons are substituted with fluorine atoms.
R ₄ represents a halogen atom, a cyano group, a hydroxy group, an amide group, an alkyl group, a cycloalkyl group, an alkoxy group, a phenyl group, an acyl group, an alkoxycarbonyl group, or R—C (═O) — or R—C ( = O) A group represented by O- (R represents an alkyl group or a cycloalkyl group). When there are a plurality of R _{4 s} , they may be the same or different, and two or more R ₄ may be bonded to form a ring.
X represents an alkylene group, an oxygen atom or a sulfur atom.
Z represents a single bond, an ether bond, an ester bond, an amide bond, a urethane bond or a urea bond, and when there are a plurality thereof, they may be the same or different.
* Represents a bond to the main chain of the resin.
n represents the number of repetitions and represents an integer of 0 to 5.
m is the number of substituents and represents an integer of 0 to 7.
The structure represented by —R ₂ —Z— is preferably a structure represented by — (CH ₂ ) ₁ —COO— (l represents an integer of 1 to 5).

Although the specific example of the repeating unit (c) which has a polar conversion group is shown, it is not limited to these.
Ra represents a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group.

Resin (C) contains a repeating unit having at least one of a fluorine atom and a silicon atom.
As a result, when the resin (C) is unevenly distributed on the surface layer of the actinic ray or radiation sensitive resin film and the immersion medium is water, the receding contact angle of the resist film surface with respect to water when the actinic ray or radiation sensitive resin film is used It is possible to improve the immersion water followability.
The receding contact angle of the actinic ray-sensitive or radiation-sensitive resin film is preferably 60 ° to 90 °, more preferably 65 ° or more, and still more preferably 70 at the temperature during exposure, usually room temperature 23 ± 3 ° C. and humidity 45 ± 5%. More than 75 degree, Especially preferably, it is 75 degree or more.
The resin (C) is unevenly distributed at the interface as described above, but unlike the surfactant, it does not necessarily have a hydrophilic group in the molecule, and contributes to uniform mixing of polar / nonpolar substances. You don't have to.
In the immersion exposure process, the immersion head needs to move on the wafer following the movement of the exposure head to scan the wafer at high speed to form the exposure pattern. In this case, the contact angle of the immersion liquid with respect to the resist film is important, and the resist is required to follow the high-speed scanning of the exposure head without remaining droplets.
By having at least one of a fluorine atom and a silicon atom as the resin (C), the hydrophobicity (water followability) of the resist surface is improved, and the development residue (scum) is reduced.

The partial structure of the repeating unit having a fluorine atom is preferably a repeating unit having an alkyl group having a fluorine atom, a cycloalkyl group having a fluorine atom, or an aryl group having a fluorine atom.
The alkyl group having a fluorine atom (preferably having 1 to 10 carbon atoms, more preferably 1 to 4 carbon atoms) is a linear or branched alkyl group in which at least one hydrogen atom is substituted with a fluorine atom, It may have a substituent.
The cycloalkyl group having a fluorine atom is a monocyclic or polycyclic cycloalkyl group in which at least one hydrogen atom is substituted with a fluorine atom, and may further have another substituent.
Examples of the aryl group having a fluorine atom include those in which at least one hydrogen atom of an aryl group such as a phenyl group or a naphthyl group is substituted with a fluorine atom, and may further have another substituent.

  As the alkyl group having a fluorine atom, the cycloalkyl group having a fluorine atom, or the aryl group having a fluorine atom, a group represented by any one of the following general formulas (F2) to (F4) is preferable. However, the present invention is not limited to this.

In general formulas (F2) to (F4),
R _{57 to} R ₆₈ each independently represents a hydrogen atom, a fluorine atom or an alkyl group (straight or branched). Provided that at least one of R _{57 to} R ₆₁ , at least one of R _{62 to} R ₆₄ and at least one of R _{65 to} R ₆₈ are a fluorine atom or an alkyl group in which at least one hydrogen atom is substituted with a fluorine atom. (Preferably having 1 to 4 carbon atoms).
R _{57 to} R ₆₁ and R _{65 to} R ₆₇ are preferably all fluorine atoms. R ₆₂ , R ₆₃ and R ₆₈ are preferably a fluoroalkyl group (preferably having 1 to 4 carbon atoms), more preferably a perfluoroalkyl group having 1 to 4 carbon atoms. R ₆₂ and R ₆₃ may be connected to each other to form a ring.

Specific examples of the group represented by the general formula (F2) include a p-fluorophenyl group, a pentafluorophenyl group, and a 3,5-di (trifluoromethyl) phenyl group.
Specific examples of the group represented by the general formula (F3) include trifluoromethyl group, pentafluoropropyl group, pentafluoroethyl group, heptafluorobutyl group, hexafluoroisopropyl group, heptafluoroisopropyl group, hexafluoro (2 -Methyl) isopropyl group, nonafluorobutyl group, octafluoroisobutyl group, nonafluorohexyl group, nonafluoro-t-butyl group, perfluoroisopentyl group, perfluorooctyl group, perfluoro (trimethyl) hexyl group, 2,2 1,3,3-tetrafluorocyclobutyl group, perfluorocyclohexyl group and the like. Hexafluoroisopropyl group, heptafluoroisopropyl group, hexafluoro (2-methyl) isopropyl group, octafluoroisobutyl group, nonafluoro-t-butyl group, perfluoroisopentyl group are preferable,
More preferred are a hexafluoroisopropyl group and a heptafluoroisopropyl group.

Specific examples of the group represented by the general formula (F4) include, for example, —C (CF ₃ ) ₂ OH, —C (C ₂ F ₅ ) ₂ OH, —C (CF ₃ ) (CH ₃ ) OH, -CH (CF ₃₎ OH and the like, -C (CF _{3) 2} OH is preferred.
The partial structure containing fluorine may be directly bonded, and is further selected from the group consisting of an alkylene group, a phenylene group, an ether group, a thioether group, a carbonyl group, an ester group, an amide group, a urethane group, or a ureylene group. You may couple | bond together through the combination of single or 2 or more groups.

  Preferred examples of the repeating unit having a fluorine atom include those shown below.

式中、Ｒ_１０、Ｒ_１１は、各々独立に、水素原子、フッ素原子、アルキル基（好ましくは炭素数１〜４の直鎖または分岐のアルキル基であり、置換基を有するアルキル基としては特にフッ素化アルキル基を挙げることができる）を表す。
Ｗ_３〜Ｗ_６は、各々独立に、少なくとも１つ以上のフッ素原子を含有する有機基を表す。具体的には前記（Ｆ２）〜（Ｆ４）の原子団が挙げられる。

In the formula, R ₁₀ and R ₁₁ are each independently a hydrogen atom, a fluorine atom, or an alkyl group (preferably a linear or branched alkyl group having 1 to 4 carbon atoms, and particularly as an alkyl group having a substituent, Fluorinated alkyl group can be mentioned).
W _{3 to} W ₆ each independently represents an organic group containing at least one fluorine atom. Specific examples include the atomic groups (F2) to (F4).

  Besides these, resins having units as shown below are also applicable.

In the formula, R _{4 to} R ₇ are each independently a hydrogen atom, a fluorine atom, or an alkyl group (preferably a linear or branched alkyl group having 1 to 4 carbon atoms, and the alkyl group having a substituent is In particular, a fluorinated alkyl group can be mentioned). However, at least one of R _{4 to} R ₇ represents a fluorine atom. R ₄ and R ₅ or R ₆ and R ₇ may form a ring.
W ₂ represents an organic group containing at least one fluorine atom. Specific examples include the atomic groups (F2) to (F4).
L ₂ represents a single bond or a divalent linking group. Examples of the divalent linking group include a substituted or unsubstituted arylene group, a substituted or unsubstituted alkylene group, a substituted or unsubstituted cycloalkylene group, —O—, —SO ₂ —, —CO—, —N (R )-(Wherein R represents a hydrogen atom or alkyl), —NHSO ₂ — or a divalent linking group in which a plurality of these are combined.

The partial structure having a silicon atom in the repeating unit is preferably a resin having an alkylsilyl structure (preferably a trialkylsilyl group) or a cyclic siloxane structure.
Specific examples of the alkylsilyl structure or the cyclic siloxane structure include groups represented by the following general formulas (CS-1) to (CS-3).

In general formulas (CS-1) to (CS-3),
R _{12 to} R ₂₆ each independently represents a linear or branched alkyl group (preferably having 1 to 20 carbon atoms) or a cycloalkyl group (preferably having 3 to 20 carbon atoms).
L < ₃ > -L < ₅ > represents a single bond or a bivalent coupling group. As the divalent linking group, an alkylene group, a phenylene group, an ether group, a thioether group, a carbonyl group, an ester group, an amide group, a urethane group, or a ureylene group is used alone or in combination of two or more groups. A combination is mentioned.
n represents an integer of 1 to 5.

The content of the repeating unit (c) in the resin (C) is preferably 10 to 100 mol%, more preferably 20 to 100 mol%, still more preferably 30 to the total repeating unit in the resin (C). 100 mol%, most preferably 40 to 100 mol%.
The content of the repeating unit (c ′) is preferably 10 to 100 mol%, more preferably 20 to 100 mol%, still more preferably 30 to 100 mol%, and most preferably 40, based on all repeating units in the resin (C). ˜100 mol%.
The content of the repeating unit (c *) is preferably from 10 to 90 mol%, more preferably from 15 to 85 mol%, still more preferably from 20 to 80 mol%, most preferably from 25 to the total repeating units in the resin (C). -75 mol%. The content of the repeating unit having at least one of a fluorine atom and a silicon atom used together with the repeating unit (c *) is preferably 10 to 90 mol%, more preferably based on all repeating units in the resin (C). It is 15 to 85 mol%, more preferably 20 to 80 mol%, and most preferably 25 to 75 mol%.
The content of the repeating unit (c ″) is preferably 10 to 100 mol%, more preferably 20 to 100 mol%, still more preferably 30 to 100 mol%, and most preferably 40 to the total repeating units in the resin (C). ˜100 mol%.

  The fluorine atom or silicon atom in the resin (C) may be contained in the main chain of the resin or may be substituted on the side chain.

The resin (C) may further contain a repeating unit (c1) having at least one of a fluorine atom and a silicon atom, which is different from the repeating units (c ′) and (c ″).
The fluorine atom or silicon atom in the repeating unit having at least one of a fluorine atom and a silicon atom may be contained in the main chain of the resin or may be substituted with a side chain.

Examples of the partial structure having a fluorine atom in the repeating unit (c1) include the same ones as described above, and preferred examples include groups represented by the general formulas (F2) to (F4).
Examples of the partial structure having a silicon atom in the repeating unit (c1) include the same ones as described above, and preferably include groups represented by the general formulas (CS-1) to (CS-3).
The repeating unit (c1) is preferably a (meth) acrylate repeating unit.

Hereinafter, although the specific example of a repeating unit (c1) is given, this invention is not limited to this. In specific examples, X ₁ represents a hydrogen atom, —CH ₃ , —F or —CF ₃ , and X ₂ represents —F or —CF ₃ .

Furthermore, the resin (C) may have at least one group selected from the following groups (x) and (z).
(X) an alkali-soluble group,
(Z) A group that decomposes by the action of an acid.

(X) Alkali-soluble groups include phenolic hydroxyl groups, carboxylic acid groups, fluorinated alcohol groups, sulfonic acid groups, sulfonamido groups, sulfonylimide groups, (alkylsulfonyl) (alkylcarbonyl) methylene groups, (alkylsulfonyl) ( Alkylcarbonyl) imide group, bis (alkylcarbonyl) methylene group, bis (alkylcarbonyl) imide group, bis (alkylsulfonyl) methylene group, bis (alkylsulfonyl) imide group, tris (alkylcarbonyl) methylene group, tris (alkylsulfonyl) ) And a methylene group.
Preferred alkali-soluble groups include fluorinated alcohol groups (preferably hexafluoroisopropanol), sulfonimide groups, and bis (carbonyl) methylene groups.

Examples of the repeating unit having an alkali-soluble group (x) include a repeating unit in which an alkali-soluble group is directly bonded to the main chain of the resin, such as a repeating unit of acrylic acid or methacrylic acid, or a main group of the resin via a linking group. Examples include repeating units in which an alkali-soluble group is bonded to the chain. Furthermore, a polymerization initiator or a chain transfer agent having an alkali-soluble group can be used at the time of polymerization to be introduced at the end of the polymer chain. Is also preferable.
The content of the repeating unit having an alkali-soluble group (x) is preferably from 1 to 50 mol%, more preferably from 3 to 35 mol%, still more preferably from 5 to 30 mol%, based on all repeating units in the resin (C). is there.

Specific examples of the repeating unit having an alkali-soluble group (x) are shown below, but the present invention is not limited thereto. In specific examples, Rx represents H, CH ₃ , CH ₂ OH, or CF ₃ .

Examples of the repeating unit having a group (z) that decomposes by the action of an acid in the resin (C) include the same repeating units having an acid-decomposable group as mentioned for the resin (A). The acid-decomposable group is preferably a cumyl ester group, an enol ester group, an acetal ester group, a tertiary alkyl ester group or the like. More preferably, it is a tertiary alkyl ester group.
The repeating unit having an acid-decomposable group is preferably a repeating unit represented by the following general formula (CAI).

In the general formula (CAI),
Xa ₁ represents a hydrogen atom, a methyl group or a group represented by —CH ₂ —R ₉ . R ₉ represents a hydroxyl group or a monovalent organic group, and examples thereof include an alkyl group having 5 or less carbon atoms and an acyl group, preferably an alkyl group having 3 or less carbon atoms, and more preferably a methyl group. Xa ₁ preferably represents a hydrogen atom, a methyl group, a trifluoromethyl group or a hydroxymethyl group.
T represents a single bond or a divalent linking group.
Rx _{1 to} Rx ₃ each independently represents an alkyl group (straight or branched) or a cycloalkyl group (monocyclic or polycyclic).
At least two of Rx _{1 to} Rx ₃ may combine to form a cycloalkyl group (monocyclic or polycyclic).

Examples of the divalent linking group for T include an alkylene group, —COO—Rt— group, —O—Rt— group, and the like. In the formula, Rt represents an alkylene group or a cycloalkylene group.
T is preferably a single bond or a —COO—Rt— group. Rt is preferably an alkylene group having 1 to 5 carbon atoms, more preferably a —CH ₂ — group or a — (CH ₂ ) ₃ — group.
The alkyl group of Rx _{1 to} Rx ₃ is preferably an alkyl group having 1 to 4 carbon atoms such as a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, or a t-butyl group.
Examples of the cycloalkyl group represented by Rx _{1 to} Rx ₃ include monocyclic cycloalkyl groups such as cyclopentyl group and cyclohexyl group, polycyclic cycloalkyl groups such as norbornyl group, tetracyclodecanyl group, tetracyclododecanyl group, and adamantyl group. Groups are preferred.
Examples of the cycloalkyl group formed by combining at least two of Rx _{1 to} Rx ₃ include a monocyclic cycloalkyl group such as a cyclopentyl group and a cyclohexyl group, a norbornyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, A polycyclic cycloalkyl group such as an adamantyl group is preferred.
It is preferable that Rx ₁ is a methyl group or an ethyl group, and Rx ₂ and Rx ₃ are bonded to form the above-described cycloalkyl group.
Each of the above groups may have a substituent. Examples of the substituent include an alkyl group (1 to 4 carbon atoms), a halogen atom, a hydroxyl group, an alkoxy group (1 to 4 carbon atoms), a carboxyl group, An alkoxycarbonyl group (C2-C6) etc. are mentioned, C8 or less is preferable.
In the resin (C), the content of the repeating unit having a group (z) that is decomposed by the action of an acid is preferably 1 to 80 mol%, more preferably 10%, based on all repeating units in the resin (C). It is -80 mol%, More preferably, it is 20-60 mol%. (Z) LWR can be improved by having a group that decomposes by the action of an acid.

Resin (C) may further have other repeating units. Preferred examples of other repeating units include the following.
(Cy1) A repeating unit having a fluorine atom and / or a silicon atom, stable to an acid, and hardly soluble or insoluble in an alkali developer.
(Cy2) A repeating unit which does not have a fluorine atom or a silicon atom, is stable to an acid, and hardly soluble or insoluble in an alkali developer.
(Cy3) A repeating unit having a fluorine atom and / or a silicon atom and having a polar group other than the above (x) and (z).
(Cy4) A repeating unit having no fluorine atom or silicon atom and having a polar group other than the above (x) and (z).

In the repeating unit of (cy1) and (cy2), insoluble or insoluble in an alkali developer is a group in which (cy1) and (cy2) generate an alkali-soluble group or an alkali-soluble group by the action of an acid or an alkali developer. (For example, an acid-decomposable group or a polar converting group) is not contained.
The repeating units (cy1) and (cy2) preferably have an alicyclic hydrocarbon structure having no polar group.

The preferred embodiments of the repeating units (cy1) to (cy4) are shown below.
The repeating units (cy1) and (cy2) are preferably repeating units represented by the following general formula (CIII).

In general formula (CIII):
R _c31 represents a hydrogen atom, an alkyl group _optionally substituted with fluorine, a cyano group, or a —CH ₂ —O—Rac ₂ group. Wherein, Rac ₂ represents a hydrogen atom, an alkyl group or an acyl group. R _c31 is preferably a hydrogen atom, a methyl group, a hydroxymethyl group or a trifluoromethyl group, particularly preferably a hydrogen atom or a methyl group.
R _c32 represents a group having an alkyl group, a cycloalkyl group, an alkenyl group, or a cycloalkenyl group. These groups may be substituted with a fluorine atom or a silicon atom.
L _c3 represents a single bond or a divalent linking group.

In general formula (CIII), the alkyl group represented by R _c32 is preferably a linear or branched alkyl group having 3 to 20 carbon atoms.
The cycloalkyl group is preferably a cycloalkyl group having 3 to 20 carbon atoms.
The alkenyl group is preferably an alkenyl group having 3 to 20 carbon atoms.
The cycloalkenyl group is preferably a cycloalkenyl group having 3 to 20 carbon atoms.
R _c32 is preferably an unsubstituted alkyl group or an alkyl group substituted with a fluorine atom.
The divalent linking group of L _c3 is preferably an ester group, an alkylene group (preferably having a carbon number of 1 to 5), an oxy group, a phenylene group, or an ester bond (a group represented by —COO—).
The repeating units (cy1) and (cy2) are preferably repeating units represented by the following general formula (C4) or (C5).

In general formulas (C4) and (C5) , R _c5 represents a hydrocarbon group having at least one cyclic structure and having neither a hydroxyl group nor a cyano group.
Rac represents a hydrogen atom, an alkyl group optionally substituted with fluorine, a cyano group, or a —CH ₂ —O—Rac ₂ group. In the formula, Rac ₂ represents a hydrogen atom, an alkyl group or an acyl group. Rac is preferably a hydrogen atom, a methyl group, a hydroxymethyl group or a trifluoromethyl group, particularly preferably a hydrogen atom or a methyl group.

The cyclic structure possessed by R _c5 includes a monocyclic hydrocarbon group and a polycyclic hydrocarbon group. Examples of the monocyclic hydrocarbon group include a cycloalkyl group having 3 to 12 carbon atoms and a cycloalkenyl group having 3 to 12 carbon atoms. A preferable monocyclic hydrocarbon group is a monocyclic hydrocarbon group having 3 to 7 carbon atoms.

  The polycyclic hydrocarbon group includes a ring assembly hydrocarbon group and a bridged cyclic hydrocarbon group. Examples of the bridged cyclic hydrocarbon ring include a bicyclic hydrocarbon ring, a tricyclic hydrocarbon ring, and a tetracyclic hydrocarbon ring. The bridged cyclic hydrocarbon ring also includes a condensed cyclic hydrocarbon ring (for example, a condensed ring in which a plurality of 5- to 8-membered cycloalkane rings are condensed). Preferred examples of the bridged cyclic hydrocarbon ring include a norbornyl group and an adamantyl group.

  These alicyclic hydrocarbon groups may have a substituent, and preferred substituents include a halogen atom, an alkyl group, a hydroxyl group protected with a protecting group, an amino group protected with a protecting group, and the like. It is done. Preferred halogen atoms include bromine, chlorine and fluorine atoms, and preferred alkyl groups include methyl, ethyl, butyl and t-butyl groups. The above alkyl group may further have a substituent, and the substituent that may further have a halogen atom, an alkyl group, a hydroxyl group protected with a protecting group, an amino protected with a protecting group The group can be mentioned.

  Examples of the protecting group include an alkyl group, a cycloalkyl group, an aralkyl group, a substituted methyl group, a substituted ethyl group, an alkoxycarbonyl group, and an aralkyloxycarbonyl group. Preferred alkyl groups include alkyl groups having 1 to 4 carbon atoms, preferred substituted methyl groups include methoxymethyl, methoxythiomethyl, benzyloxymethyl, t-butoxymethyl, 2-methoxyethoxymethyl groups, and preferred substituted ethyl groups. 1-ethoxyethyl, 1-methyl-1-methoxyethyl, preferred acyl groups include formyl, acetyl, propionyl, butyryl, isobutyryl, valeryl, pivaloyl groups, etc., aliphatic acyl groups having 1 to 6 carbon atoms, alkoxycarbonyl Examples of the group include an alkoxycarbonyl group having 1 to 4 carbon atoms.

In General Formula (C5), R _c6 represents an alkyl group, a cycloalkyl group, an alkenyl group, a cycloalkenyl group, an alkoxycarbonyl group, or an alkylcarbonyloxy group. These groups may be substituted with a fluorine atom or a silicon atom.
The alkyl group for R _c6 is preferably a linear or branched alkyl group having 1 to 20 carbon atoms. The cycloalkyl group is preferably a cycloalkyl group having 3 to 20 carbon atoms.
The alkenyl group is preferably an alkenyl group having 3 to 20 carbon atoms.
The cycloalkenyl group is preferably a cycloalkenyl group having 3 to 20 carbon atoms.
The alkoxycarbonyl group is preferably an alkoxycarbonyl group having 2 to 20 carbon atoms.
The alkylcarbonyloxy group is preferably an alkylcarbonyloxy group having 2 to 20 carbon atoms.
n represents an integer of 0 to 5. When n is 2 or more, the plurality of R _c6 may be the same or different.
R _c6 is preferably an unsubstituted alkyl group or an alkyl group substituted with a fluorine atom, particularly preferably a trifluoromethyl group or a t-butyl group.

  (Cy1) and (cy2) are preferably repeating units represented by the following general formula (CII-AB).

In the formula (CII-AB),
R _c11 ′ and R _c12 ′ each independently represent a hydrogen atom, a cyano group, a halogen atom or an alkyl group.
Zc ′ represents an atomic group for forming an alicyclic structure containing two bonded carbon atoms (C—C).

  The general formula (CII-AB) is more preferably the following general formula (CII-AB1) or general formula (CII-AB2).

In the formulas (CII-AB1) and (CII-AB2),
Rc ₁₃ '~Rc _16' each independently represent a hydrogen atom, a halogen atom, an alkyl group or a cycloalkyl group.
It is also possible to form at least two members to the ring of Rc _l3 '~Rc _16'.
n represents 0 or 1.

Specific examples of (cy1) and (cy2) are listed below, but the present invention is not limited to these. In the formula, Ra represents H, CH ₃ , CH ₂ OH, CF ₃ or CN.

(Cy3) and (cy4) are preferably repeating units having a hydroxyl group or a cyano group as a polar group. This improves developer affinity. The repeating unit having a hydroxyl group or a cyano group is preferably a repeating unit having an alicyclic hydrocarbon structure substituted with a hydroxyl group or a cyano group. The alicyclic hydrocarbon structure in the alicyclic hydrocarbon structure substituted with a hydroxyl group or a cyano group is preferably an adamantyl group, a diamantyl group, or a norbornyl group. Preferred examples of the alicyclic hydrocarbon structure substituted with a hydroxyl group or a cyano group include a monohydroxyadamantyl group, a dihydroxyadamantyl group, a monohydroxydiamantyl group, a dihydroxyadamantyl group, and a norbornyl group substituted with a cyano group.
Examples of the repeating unit having the atomic group include repeating units represented by the following general formulas (CAIIa) to (CAIId).

In the general formulas (CAIIa) to (CAIId),
R ₁ c represents a hydrogen atom, a methyl group, a trifluoromethyl group or a hydroxymethyl group.
R ₂ c to R ₄ c each independently represents a hydrogen atom, a hydroxyl group or a cyano group. However, at least one of R ₂ c to R ₄ c represents a hydroxyl group or a cyano group. Preferably, one or two of R ₂ c to R ₄ c are a hydroxyl group and the remaining is a hydrogen atom. In the general formula (CAIIa), more preferably, _two of R ₂ c to R ₄ c are hydroxyl groups and the rest are hydrogen atoms.

  Specific examples of the repeating unit represented by (cy3) and (cy4) are given below, but the present invention is not limited thereto.

The content of the repeating units represented by (cy1) to (cy4) is preferably 5 to 40 mol%, more preferably 5 to 30 mol%, still more preferably 10 to 10%, based on all repeating units in the resin (C). 25 mol%.
Resin (C) may have a plurality of repeating units represented by (cy1) to (cy4).

When resin (C) has a fluorine atom, the fluorine atom content is preferably 5 to 80% by mass and more preferably 10 to 80% by mass with respect to the molecular weight of the resin (C). Moreover, it is preferable that the repeating unit containing a fluorine atom is 10-100 mass% with respect to all the repeating units in resin (C), and it is more preferable that it is 30-100 mass%.
When resin (C) has a silicon atom, it is preferable that the content rate of a silicon atom is 2-50 mass% with respect to the molecular weight of resin (C), and it is more preferable that it is 2-30 mass%. Moreover, it is preferable that it is 10-90 mass% with respect to all the repeating units of resin (C), and, as for the repeating unit containing a silicon atom, it is more preferable that it is 20-80 mass%.

  The weight average molecular weight of the resin (C) in terms of standard polystyrene is preferably 1,000 to 100,000, more preferably 1,000 to 50,000, and still more preferably 2,000 to 15,000.

  The content of the resin (C) in the actinic ray or radiation sensitive resin composition can be appropriately adjusted and used so that the receding contact angle of the actinic ray or radiation sensitive resin film falls within the above range. It is preferable that it is 0.01-10 mass% on the basis of the total solid of a radiation sensitive resin composition, More preferably, it is 0.1-9 mass%, More preferably, it is 0.5-8 mass% is there.

The resin (C) can be synthesized and purified in the same manner as the resin (A), and it is natural that there are few impurities such as metals, and the residual monomer and oligomer components are 0 to 10% by mass. Preferably, more preferably 0 to 5% by mass, and still more preferably 0 to 1% by mass. Thereby, a resist having no change over time such as foreign matter in liquid or sensitivity can be obtained. The molecular weight distribution (Mw / Mn, also referred to as dispersity) is preferably in the range of 1 to 3, more preferably 1 to 2, and still more preferably from the viewpoints of resolution, resist shape, resist pattern sidewall, roughness, and the like. It is in the range of 1 to 1.8, most preferably 1 to 1.5.

  As the resin (C), various commercially available products can be used, and similarly to the resin (A), the resin (C) can be synthesized according to a conventional method (for example, radical polymerization).

  Specific examples of the resin (C) are shown. The table below shows the molar ratio of repeating units in each resin (corresponding to each repeating unit in order from the left), weight average molecular weight (Mw), and dispersity (Mw / Mn).

Resin (C) can be used individually by 1 type or in combination of 2 or more types.
Moreover, it is preferable to use it combining with resin (CP) which has at least any one of a fluorine atom or a silicon atom different from resin (C).

(CP) Resin having at least one of fluorine atom and silicon atom The actinic ray-sensitive or radiation-sensitive resin composition of the present invention contains at least one of fluorine atom and silicon atom separately from the resin (C). You may further contain resin (CP) which has. By containing the resin (C) / resin (CP), the resin (C) / resin (CP) is unevenly distributed in the surface layer of the film, and when the immersion medium is water, the resist film surface with respect to water when used as a film The receding contact angle can be improved, and the immersion water followability can be improved. The receding contact angle of the film is preferably 60 ° to 90 °, more preferably 70 ° or more. The resin (CP) content can be appropriately adjusted and used so that the receding contact angle of the film falls within the above range, but 0.01% based on the total solid content of the actinic ray-sensitive or radiation-sensitive resin composition. It is preferable that it is -10 mass%, More preferably, it is 0.01-5 mass%, More preferably, it is 0.01-4 mass%, Most preferably, it is 0.01-3 mass%. The resin (CP) is unevenly distributed at the interface as described above, but unlike the surfactant, it does not necessarily have a hydrophilic group in the molecule, and contributes to uniform mixing of polar / nonpolar substances. You don't have to.

The fluorine atom or silicon atom in the resin (CP) having at least one of a fluorine atom and a silicon atom may be present in the main chain of the resin or may be substituted with a side chain.
The resin (CP) is preferably a resin having an alkyl group having a fluorine atom, a cycloalkyl group having a fluorine atom, or an aryl group having a fluorine atom as a partial structure having a fluorine atom.
The alkyl group having a fluorine atom (preferably having 1 to 10 carbon atoms, more preferably 1 to 4 carbon atoms) is a linear or branched alkyl group in which at least one hydrogen atom is substituted with a fluorine atom, It may have a substituent.
The cycloalkyl group having a fluorine atom is a monocyclic or polycyclic cycloalkyl group in which at least one hydrogen atom is substituted with a fluorine atom, and may further have another substituent.
Examples of the aryl group having a fluorine atom include those in which at least one hydrogen atom of an aryl group such as a phenyl group or a naphthyl group is substituted with a fluorine atom, and may further have another substituent.

Preferred examples of the alkyl group having a fluorine atom, the cycloalkyl group having a fluorine atom, or the aryl group having a fluorine atom preferably include groups represented by general formulas (F2) to (F4) in the resin (C). However, the present invention is not limited to this.
In this invention, it is preferable that group represented by general formula (F2)-(F4) is contained in a (meth) acrylate type repeating unit.

Hereinafter, although the specific example of the repeating unit which has a fluorine atom is shown, this invention is not limited to this.
In specific examples, X ₁ represents a hydrogen atom, —CH ₃ , —F or —CF ₃ .
X ₂ represents —F or —CF ₃ .

The resin (CP) is preferably a resin having an alkylsilyl structure (preferably a trialkylsilyl group) or a cyclic siloxane structure as a partial structure having a silicon atom.
Specific examples of the alkylsilyl structure or the cyclic siloxane structure include groups represented by general formulas (CS-1) to (CS-3) in the resin (C).

Furthermore, the resin (CP) may further have at least one group selected from the following groups (x) and (z).
(X) an alkali-soluble group,
(Z) A group that decomposes by the action of an acid.
Specific examples of these groups include the same groups as those in the resin (C).

In the resin (CP), examples of the repeating unit having a group (z) capable of decomposing by the action of an acid include the same repeating units having an acid-decomposable group as mentioned for the resin (A). The content of the repeating unit having a group (z) that decomposes by the action of an acid in the resin (CP) is preferably from 1 to 80 mol%, more preferably 10%, based on all repeating units in the resin (CP). It is -80 mol%, More preferably, it is 20-60 mol%.
The resin (CP) may further have a repeating unit represented by the general formula (CIII) in the resin (C).

When resin (CP) has a fluorine atom, it is preferable that the content rate of a fluorine atom is 5-80 mass% with respect to the molecular weight of resin (CP), and it is more preferable that it is 10-80 mass%. Moreover, it is preferable that the repeating unit containing a fluorine atom is 10-100 mass% with respect to all the repeating units in resin (CP), and it is more preferable that it is 30-100 mass%.
When resin (CP) has a silicon atom, it is preferable that the content rate of a silicon atom is 2-50 mass% with respect to the molecular weight of resin (CP), and it is more preferable that it is 2-30 mass%. Moreover, it is preferable that the repeating unit containing a silicon atom is 10-100 mass% with respect to all the repeating units of resin (CP), and it is more preferable that it is 20-100 mass%.
The weight average molecular weight of the resin (CP) in terms of standard polystyrene is preferably 1,000 to 100,000, more preferably 1,000 to 50,000, and still more preferably 2,000 to 15,000.

  The resin (CP) can be synthesized and purified in the same manner as the resin (A). Naturally, the residual monomer and oligomer components are 0 to 10% by mass with less impurities such as metals. More preferably, 0 to 5% by mass, and still more preferably 0 to 1% by mass. As a result, an actinic ray-sensitive or radiation-sensitive resin composition having no change over time such as foreign matter in liquid or sensitivity can be obtained. The molecular weight distribution (Mw / Mn, also referred to as dispersity) is preferably in the range of 1 to 3, more preferably 1 to 2, and still more preferably from the viewpoints of resolution, resist shape, resist pattern sidewall, roughness, and the like. It is in the range of 1 to 1.8, most preferably 1 to 1.5.

  As the resin (CP), various commercially available products can be used, and the resin (CP) can be synthesized according to a conventional method (for example, radical polymerization) in the same manner as the resin (A).

  Specific examples of the resin (CP) having at least one of a fluorine atom and a silicon atom are shown below. The table below shows the molar ratio of repeating units in each resin (corresponding to each repeating unit in order from the left), weight average molecular weight (Mw), and dispersity (Mw / Mn).

  The film formed from the actinic ray-sensitive or radiation-sensitive resin composition of the present invention is filled with a liquid (immersion medium) having a higher refractive index than air between the film and the lens when irradiated with actinic rays or radiation. Exposure (immersion exposure) may be performed. Thereby, resolution can be improved. As the immersion medium to be used, any liquid can be used as long as it has a higher refractive index than air, but pure water is preferred.

The immersion liquid used for the immersion exposure will be described below.
The immersion liquid is preferably a liquid that is transparent to the exposure wavelength and has a refractive index temperature coefficient as small as possible so as to minimize distortion of the optical image projected onto the resist film. Is an ArF excimer laser (wavelength; 193 nm), it is preferable to use water from the viewpoints of availability and ease of handling in addition to the above-mentioned viewpoints.
Further, a medium having a refractive index of 1.5 or more can be used in that the refractive index can be further improved. This medium may be an aqueous solution or an organic solvent.

  When water is used as the immersion liquid, the surface tension of the water is decreased and the surface activity is increased, so that the resist film on the wafer is not dissolved and the influence on the optical coating on the lower surface of the lens element can be ignored. An additive (liquid) may be added in a small proportion. The additive is preferably an aliphatic alcohol having a refractive index substantially equal to that of water, and specifically includes methyl alcohol, ethyl alcohol, isopropyl alcohol and the like. By adding an alcohol having a refractive index substantially equal to that of water, even if the alcohol component in water evaporates and the content concentration changes, an advantage that the change in the refractive index of the entire liquid can be made extremely small can be obtained. On the other hand, when an opaque material or impurities whose refractive index is significantly different from that of water are mixed with 193 nm light, the optical image projected on the resist film is distorted. . Further, pure water filtered through an ion exchange filter or the like may be used.

The electrical resistance of water is desirably 18.3 MQcm or more, the TOC (organic substance concentration) is desirably 20 ppb or less, and deaeration treatment is desirably performed.
Moreover, it is possible to improve lithography performance by increasing the refractive index of the immersion liquid. From such a viewpoint, an additive for increasing the refractive index may be added to water, or heavy water (D ₂ O) may be used instead of water.

An immersion liquid poorly soluble film (hereinafter also referred to as “topcoat”) may be provided between the film of the composition of the present invention and the immersion liquid so that the film does not directly contact the immersion liquid. Good. The necessary functions for the top coat are suitability for application to the upper layer of the resist, radiation, especially transparency to 193 nm, and poor immersion liquid solubility. It is preferable that the top coat is not mixed with the resist and can be uniformly applied to the resist upper layer.
From the viewpoint of 193 nm transparency, the top coat is preferably a polymer that does not contain abundant aromatics. Specifically, the polymer contains a hydrocarbon polymer, an acrylate polymer, polymethacrylic acid, polyacrylic acid, polyvinyl ether, and silicon. Examples thereof include a polymer and a fluorine-containing polymer. The above-mentioned hydrophobic resins (C) and (CP) are also suitable as a top coat. From the viewpoint of contaminating the optical lens when impurities are eluted from the top coat into the immersion liquid, it is preferable that the residual monomer component of the polymer contained in the top coat is small.

When peeling the top coat, a developer may be used, or a separate release agent may be used. As the release agent, a solvent having low penetration into the film is preferable. In terms of being able to perform the peeling process simultaneously with the film development process, it is preferable that the peeling process can be performed with an alkaline developer. The top coat is preferably acidic from the viewpoint of peeling with an alkali developer, but may be neutral or alkaline from the viewpoint of non-intermixability with the film.
The resolution is improved when there is no difference in refractive index between the top coat and the immersion liquid. In the case of using water as the immersion liquid in an ArF excimer laser (wavelength: 193 nm), the top coat for ArF immersion exposure is preferably close to the refractive index of the immersion liquid. From the viewpoint of making the refractive index close to the immersion liquid, it is preferable to have fluorine atoms in the topcoat. A thin film is more preferable from the viewpoint of transparency and refractive index.

  The top coat is preferably not mixed with the membrane and further not mixed with the immersion liquid. From this point of view, when the immersion liquid is water, the solvent used for the top coat is preferably a water-insoluble medium that is hardly soluble in the solvent used for the composition of the present invention. Furthermore, when the immersion liquid is an organic solvent, the topcoat may be water-soluble or water-insoluble.

(B) Compound that generates acid upon irradiation with actinic ray or radiation The composition of the present invention contains a compound that generates acid upon irradiation with actinic ray or radiation (hereinafter also referred to as “acid generator”).
Although it will not specifically limit as an acid generator if it is a well-known thing, Preferably the compound represented by the following general formula (ZI), (ZII), (ZIII) can be mentioned.

In the general formula (ZI),
R ₂₀₁ , R ₂₀₂ and R ₂₀₃ each independently represents an organic group.
The carbon number of the organic group as R ₂₀₁ , R ₂₀₂ and R ₂₀₃ is generally 1 to 30, preferably 1
~ 20.
Two of R _{201 to} R ₂₀₃ may be bonded to form a ring structure, and the ring may contain an oxygen atom, a sulfur atom, an ester bond, an amide bond, or a carbonyl group. The two of the group formed by bonding of the R ₂₀₁ to R _203, there can be mentioned an alkylene group (e.g., butylene, pentylene).
Z ⁻ represents a non-nucleophilic anion (an anion having an extremely low ability to cause a nucleophilic reaction).

Examples of Z ⁻ include a sulfonate anion (an aliphatic sulfonate anion, an aromatic sulfonate anion, a camphor sulfonate anion, etc.), a carboxylate anion (an aliphatic carboxylate anion, an aromatic carboxylate anion, an aralkyl carboxylate anion). Etc.), sulfonylimide anion, bis (alkylsulfonyl) imide anion, tris (alkylsulfonyl) methide anion and the like.

  The aliphatic moiety in the aliphatic sulfonate anion and the aliphatic carboxylate anion may be an alkyl group or a cycloalkyl group, preferably a linear or branched alkyl group having 1 to 30 carbon atoms and a carbon number. 3-30 cycloalkyl groups are mentioned.

  The aromatic group in the aromatic sulfonate anion and aromatic carboxylate anion is preferably an aryl group having 6 to 14 carbon atoms such as a phenyl group, a tolyl group, and a naphthyl group.

  The alkyl group, cycloalkyl group and aryl group mentioned above may have a substituent. Specific examples thereof include nitro groups, halogen atoms such as fluorine atoms, carboxyl groups, hydroxyl groups, amino groups, cyano groups, alkoxy groups (preferably having 1 to 15 carbon atoms), cycloalkyl groups (preferably having 3 to 15 carbon atoms). ), An aryl group (preferably 6 to 14 carbon atoms), an alkoxycarbonyl group (preferably 2 to 7 carbon atoms), an acyl group (preferably 2 to 12 carbon atoms), an alkoxycarbonyloxy group (preferably 2 to 2 carbon atoms). 7), an alkylthio group (preferably 1 to 15 carbon atoms), an alkylsulfonyl group (preferably 1 to 15 carbon atoms), an alkyliminosulfonyl group (preferably 2 to 15 carbon atoms), an aryloxysulfonyl group (preferably carbon) Number 6-20), alkylaryloxysulfonyl group (preferably C7-20), cycloalkylary Examples thereof include an oxysulfonyl group (preferably having 10 to 20 carbon atoms), an alkyloxyalkyloxy group (preferably having 5 to 20 carbon atoms), a cycloalkylalkyloxyalkyloxy group (preferably having 8 to 20 carbon atoms), and the like. . About the aryl group and ring structure which each group has, an alkyl group (preferably C1-C15) can further be mentioned as a substituent.

  The aralkyl group in the aralkyl carboxylate anion is preferably an aralkyl group having 6 to 12 carbon atoms, such as benzyl group, phenethyl group, naphthylmethyl group, naphthylethyl group, naphthylbutyl group, and the like.

  Examples of the sulfonylimide anion include saccharin anion.

  The alkyl group in the bis (alkylsulfonyl) imide anion and tris (alkylsulfonyl) methide anion is preferably an alkyl group having 1 to 5 carbon atoms. Examples of substituents for these alkyl groups include halogen atoms, alkyl groups substituted with halogen atoms, alkoxy groups, alkylthio groups, alkyloxysulfonyl groups, aryloxysulfonyl groups, cycloalkylaryloxysulfonyl groups, and the like. A fluorine atom or an alkyl group substituted with a fluorine atom is preferred.

Examples of other Z ⁻ include fluorinated phosphorus, fluorinated boron, and fluorinated antimony.

Z ⁻ includes an aliphatic sulfonate anion substituted with at least α-position of sulfonic acid with a fluorine atom, an aromatic sulfonate anion substituted with a fluorine atom or a group having a fluorine atom, and an alkyl group substituted with a fluorine atom. Bis (alkylsulfonyl) imide anions and tris (alkylsulfonyl) methide anions in which the alkyl group is substituted with a fluorine atom are preferred. The non-nucleophilic anion is more preferably a perfluoroaliphatic sulfonate anion (more preferably 4 to 8 carbon atoms), a benzenesulfonate anion having a fluorine atom, still more preferably a nonafluorobutanesulfonate anion, or perfluorooctane. A sulfonate anion, a pentafluorobenzenesulfonate anion, and a 3,5-bis (trifluoromethyl) benzenesulfonate anion.
From the viewpoint of acid strength, the pKa of the generated acid is preferably −1 or less in order to improve sensitivity.

The organic group for R ₂₀₁ , R ₂₀₂ and R ₂₀₃ is an aryl group (preferably having 6 to 15 carbon atoms).
, A linear or branched alkyl group (preferably having 1 to 10 carbon atoms), a cycloalkyl group (preferably having 3 to 15 carbon atoms), and the like.
Of R ₂₀₁ , R ₂₀₂ and R ₂₀₃ , at least one is preferably an aryl group, more preferably all three are aryl groups. As the aryl group, in addition to a phenyl group, a naphthyl group, and the like, a heteroaryl group such as an indole residue and a pyrrole residue can be used. These aryl groups may further have a substituent. Examples of the substituent include halogen atoms such as nitro groups and fluorine atoms, carboxyl groups, hydroxyl groups, amino groups, cyano groups, alkoxy groups (preferably having 1 to 15 carbon atoms), cycloalkyl groups (preferably having 3 to 15 carbon atoms). ), An aryl group (preferably 6 to 14 carbon atoms), an alkoxycarbonyl group (preferably 2 to 7 carbon atoms), an acyl group (preferably 2 to 12 carbon atoms), an alkoxycarbonyloxy group (preferably 2 to 2 carbon atoms). 7) and the like, but are not limited thereto.
Two selected from R ₂₀₁ , R ₂₀₂ and R ₂₀₃ may be bonded via a single bond or a linking group. The linking group is an alkylene group (preferably having 1 to 3 carbon atoms), -O-, -S.
-, - CO -, - SO 2 - it is and the like, but is not limited thereto.

Preferred structures when at least one of R ₂₀₁ , R ₂₀₂ and R ₂₀₃ is not an aryl group include paragraphs 0047 and 0048 of JP-A No. 2004-233661 and paragraphs 0040 to 0046 of JP-A No. 2003-35948. , Compounds exemplified as formulas (I-1) to (I-70) in US Patent Application Publication No. 2003 / 0224288A1, and formula (IA-1) in US Patent Application Publication No. 2003 / 0077540A1 Cation structures such as compounds exemplified as to (IA-54) and formulas (IB-1) to (IB-24).
In particular, when at least one of R ₂₀₁ , R ₂₀₂ and R ₂₀₃ is not an aryl group, the following embodiment (1) or (2) is particularly preferable.
(1) At least one of R ₂₀₁ , R ₂₀₂ and R ₂₀₃ has a structure represented by Ar—CO—X—, and the remaining two are a linear or branched alkyl group or a cycloalkyl group. If. At this time, the remaining two linear or branched alkyl groups or cycloalkyl groups may be bonded to each other to form a ring structure. Here, Ar represents an aryl group which may have a substituent, and specifically, is the same as the aryl group as R ₂₀₁ , R ₂₀₂ and R ₂₀₃ . A phenyl group which may have a substituent is preferable.
X represents an alkylene group which may have a substituent. Specifically, it is an alkylene group having 1 to 6 carbon atoms. Preferably it is a C1-C3 linear or branched alkylene group. The remaining two linear or branched alkyl groups or cycloalkyl groups preferably have 1 to 6 carbon atoms. These atomic groups may further have a substituent. Moreover, it is preferable that it mutually couple | bonds and forms the ring structure (preferably 5-7 membered ring).
(2) When at least one of R ₂₀₁ , R ₂₀₂ and R ₂₀₃ is an aryl group which may have a substituent, and the remaining two are a linear or branched alkyl group or a cycloalkyl group .
At this time, as the aryl group, specifically, the same as the aryl group of R _201, R ₂₀₂ and R _203, a phenyl group or a naphthyl group is preferable. The aryl group preferably has any one of a hydroxyl group, an alkoxy group, and an alkyl group as a substituent. More preferably, it is a C1-C12 alkoxy group as a substituent, More preferably, it is a C1-C6 alkoxy group.
The remaining two linear or branched alkyl groups or cycloalkyl groups preferably have 1 to 6 carbon atoms. These atomic groups may further have a substituent. Further, they may be bonded to each other to form a ring structure.

In general formulas (ZII) and (ZIII),
R ₂₀₄ to R ₂₀₇ each independently represents an aryl group, an alkyl group or a cycloalkyl group.

The aryl group, alkyl group, and cycloalkyl group of R _{204 to} R ₂₀₇ are the same as the aryl group described as the aryl group, alkyl group, and cycloalkyl group of R _{201 to} R ₂₀₃ in the aforementioned compound (ZI).
Aryl group, alkyl group of R ₂₀₄ to R _207, cycloalkyl groups may have a substituent. Examples of the substituent include those that the aryl group, alkyl group, and cycloalkyl group of R _{201 to} R ₂₀₃ in the above-described compound (ZI) may have.

Z ⁻ represents a non-nucleophilic anion, and examples thereof include the same as the non-nucleophilic anion of Z ^{− in} formula (ZI).

  Examples of the acid generator further include compounds represented by the following general formula (ZIV), (ZV), or (ZVI).

In general formulas (ZIV) to (ZVI),
Ar ₃ and Ar ₄ each independently represents an aryl group.
R ₂₀₈ , R ₂₀₉ and R ₂₁₀ each independently represents an alkyl group, a cycloalkyl group or an aryl group.
A represents an alkylene group, an alkenylene group or an arylene group.

  Among acid generators, particularly preferred examples are given below.

An acid generator can be used individually by 1 type or in combination of 2 or more types.
The content of the acid generator in the composition is preferably 0.1 to 20% by mass, more preferably 0.5 to 15% by mass, and still more preferably 4 to 13% by mass, based on the total solid content of the composition. %.

Moreover, the compound represented by general formula (I) can also be used as an acid generator.
The compound represented by the general formula (I) is a compound that generates an acid corresponding to the anion moiety in the general formula (I) by irradiation with actinic rays or radiation.

(In the formula, X ⁺ represents an organic counter ion, and R represents a hydrogen atom or an organic group.)
In general formula (I), R represents a hydrogen atom or an organic group, preferably an organic group having 1 to 40 carbon atoms, more preferably an organic group having 3 to 20 carbon atoms. Most preferably, it is an organic group represented by II).
The organic group for R may have one or more carbon atoms. Preferably, the atom bonded to the oxygen atom in the ester bond represented by the general formula (I) is a carbon atom, such as an alkyl group, Examples include a cycloalkyl group, an aryl group, an aralkyl group, and a group having a lactone structure, and the chain may have a hetero atom such as an oxygen atom or a sulfur atom. These may have each other as a substituent, and may have a substituent such as a hydroxyl group, an acyl group, an acyloxy group, an oxy group (═O), or a halogen atom.

(In Formula (II), Rc represents a monocyclic or polycyclic organic group having 3 to 30 carbon atoms which may contain a cyclic ether, a cyclic thioether, a cyclic ketone, a cyclic carbonate, a lactone, or a lactam structure. Y Are a hydroxyl group, a halogen atom, a cyano group, a carboxyl group, a hydrocarbon group having 1 to 10 carbon atoms, a hydroxyalkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, and an acyl group having 1 to 10 carbon atoms. Represents an alkoxycarbonyl group having 2 to 10 carbon atoms, an acyloxy group having 2 to 10 carbon atoms, an alkoxyalkyl group having 2 to 10 carbon atoms, and a halogenated alkyl group having 1 to 8 carbon atoms, and m = 0 to 6. When there are a plurality of Y, they may be the same or different, and n = 0 to 10.
The total number of carbon atoms constituting the R group represented by formula (II) is preferably 40 or less.
It is preferable that n = 0 to 3 and Rc is a monocyclic or polycyclic organic group having 7 to 16.
The molecular weight of the compound represented by the general formula (I) is generally 300 to 1000, preferably 400 to 800, and more preferably 500 to 700.

Examples of the organic counter ion of X ⁺ include a sulfonium cation and an iodonium cation.
In the compound of the general formula (I), as a preferred form, a compound represented by the general formula (Z _SC1 ) or the general formula (Z _IC1 ) can be exemplified.

In the general formula (Z _SC1 ), the definition and preferred range of R are the same as those in the general formula (I).
R ₂₀₁ , R ₂₀₂ and R ₂₀₃ each independently represents an organic group.
Specific examples of the organic group of R _201, R ₂₀₂ and R _203, such as a preferred embodiment is the same as R _201, R ₂₀₂ and R ₂₀₃ in formula (ZI).
The carbon number of the organic group as R ₂₀₁ , R ₂₀₂ and R ₂₀₃ is generally 1-30, preferably 1-20.
Two of R _{201 to} R ₂₀₃ may be bonded to form a ring structure, and the ring may contain an oxygen atom, a sulfur atom, an ester bond, an amide bond, or a carbonyl group. The two of the group formed by bonding of the R ₂₀₁ to R _203, there can be mentioned an alkylene group (e.g., butylene, pentylene).

Examples of the organic group as R ₂₀₁ , R ₂₀₂ and R ₂₀₃ include corresponding groups in the compounds (Z _SC1-1 ), (Z _SC1 -2) and (Z _SC1-3 ) which will be described later.

A compound having a plurality of structures represented by the general formula (Z _SC1 ) may also be used. For example, the general formula at least one of R ₂₀₁ to R ₂₀₃ of a compound represented by (Z _SC1), bound to at least one of R ₂₀₁ to R ₂₀₃ of another compound represented by the general formula (Z _SC1) It may be a compound having a structure.

More preferred (Z _SC1 ) components include the compounds (Z _SC1 -1), (Z _SC1 -2), and (Z _SC1 -3) described below.

The compound (Z _SC1-1 ) is an arylsulfonium compound in which at least one of R _{201 to} R _{203 in} the general formula (Z _SC1 ) is an aryl group, that is, a compound having arylsulfonium as a cation.
The definition and preferred range of R are the same as the definition in general formula (I).

In the arylsulfonium compound, all of R _{201 to} R ₂₀₃ may be an aryl group, or a part of R _{201 to} R ₂₀₃ may be an aryl group with the remaining being an alkyl group or a cycloalkyl group.

  Examples of the arylsulfonium compound include triarylsulfonium compounds, diarylalkylsulfonium compounds, aryldialkylsulfonium compounds, diarylcycloalkylsulfonium compounds, and aryldicycloalkylsulfonium compounds.

  The aryl group of the arylsulfonium compound is preferably a phenyl group or a naphthyl group, and more preferably a phenyl group. The aryl group may be an aryl group having a heterocyclic structure having an oxygen atom, a nitrogen atom, a sulfur atom or the like. Examples of the aryl group having a heterocyclic structure include a pyrrole residue (a group formed by losing one hydrogen atom from pyrrole) and a furan residue (a group formed by losing one hydrogen atom from furan). Groups), thiophene residues (groups formed by the loss of one hydrogen atom from thiophene), indole residues (groups formed by the loss of one hydrogen atom from indole), benzofuran residues ( A group formed by losing one hydrogen atom from benzofuran), a benzothiophene residue (a group formed by losing one hydrogen atom from benzothiophene), and the like. When the arylsulfonium compound has two or more aryl groups, the two or more aryl groups may be the same or different.

The alkyl group or cycloalkyl group that the arylsulfonium compound has as necessary is preferably a linear or branched alkyl group having 1 to 15 carbon atoms and a cycloalkyl group having 3 to 15 carbon atoms, such as a methyl group, Examples thereof include an ethyl group, a propyl group, an n-butyl group, a sec-butyl group, a t-butyl group, a cyclopropyl group, a cyclobutyl group, and a cyclohexyl group.

Aryl group, alkyl group of R ₂₀₁ to R _203, cycloalkyl group, an alkyl group (for example, 1 to 15 carbon atoms), a cycloalkyl group (for example, 3 to 15 carbon atoms), an aryl group (for example, 6 to 14 carbon atoms) , An alkoxy group (for example, having 1 to 15 carbon atoms), a halogen atom, a hydroxyl group, or a phenylthio group may be substituted. Preferred substituents are linear or branched alkyl groups having 1 to 12 carbon atoms, cycloalkyl groups having 3 to 12 carbon atoms, and linear, branched or cyclic alkoxy groups having 1 to 12 carbon atoms, more preferably carbon. An alkyl group having 1 to 4 carbon atoms and an alkoxy group having 1 to 4 carbon atoms. The substituent may be substituted with any one of the three R _{201 to} R ₂₀₃ , or may be substituted with all three. When R _{201 to} R ₂₀₃ are an aryl group, the substituent is preferably substituted at the p-position of the aryl group.

Next, the compound (Z _SC1-2 ) will be described.
The definition and preferred range of R are the same as the definition in general formula (I).
The compound (Z _SC1 -2) is a compound in which R _{201 to} R ₂₀₃ in the formula (Z _SC1 ) each independently represents an organic group having no aromatic ring. Here, the aromatic ring includes an aromatic ring containing a hetero atom.

The organic group having no aromatic ring as R ₂₀₁ to R ₂₀₃ generally has 1 to 30 carbon atoms, preferably 1 to 20 carbon atoms.

R _{201 to} R ₂₀₃ are each independently preferably an alkyl group, a cycloalkyl group, an allyl group, or a vinyl group, more preferably a linear or branched 2-oxoalkyl group, 2-oxocycloalkyl group, alkoxy group. A carbonylmethyl group, particularly preferably a linear or branched 2-oxoalkyl group.

The alkyl group and cycloalkyl group of R ₂₀₁ to R _203, preferably a linear or branched alkyl group having 1 to 10 carbon atoms (e.g., methyl group, ethyl group, propyl group, butyl group, pentyl group), carbon Examples thereof include cycloalkyl groups of several 3 to 10 (cyclopentyl group, cyclohexyl group, norbornyl group). More preferred examples of the alkyl group include a 2-oxoalkyl group and an alkoxycarbonylmethyl group. More preferred examples of the cycloalkyl group include a 2-oxocycloalkyl group.

The 2-oxoalkyl group may be either linear or branched, and a group having> C = O at the 2-position of the above alkyl group is preferable.
The 2-oxocycloalkyl group is preferably a group having> C═O at the 2-position of the cycloalkyl group.

  The alkoxy group in the alkoxycarbonylmethyl group is preferably an alkoxy group having 1 to 5 carbon atoms (methoxy group, ethoxy group, propoxy group, butoxy group, pentoxy group).

R _{201 to} R ₂₀₃ may be further substituted with a halogen atom, an alkoxy group (for example, having 1 to 5 carbon atoms), a hydroxyl group, a cyano group, or a nitro group.

The compound (Z _SC1 -3) is a compound represented by the following general formula (Z _SC1 -3), and is a compound having a phenacylsulfonium salt structure.

In the general formula (Z _SC1 -3),
The definition and preferred range of R are the same as the definition in general formula (I).
R _{1c to} R _5c each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an alkoxy group or a halogen atom.
R _6c and R _7c each independently represents a hydrogen atom, an alkyl group or a cycloalkyl group.
R _x and R _y each independently represents an alkyl group, a cycloalkyl group, an allyl group or a vinyl group.

Any two or more of R _{1c to} R _5c , R _6c and R _7c , and R _x and R _y may be bonded to each other to form a ring structure, and this ring structure includes an oxygen atom and a sulfur atom. , An ester bond and an amide bond may be included. Examples of the group formed by combining any two or more of R _{1c to} R _5c , R _6c and R _7c , and R _x and R _y include a butylene group and a pentylene group.

The alkyl group as R _{1c to} R _7c may be either linear or branched, for example, an alkyl group having 1 to 20 carbon atoms, preferably a linear or branched alkyl group having 1 to 12 carbon atoms ( Examples thereof include a methyl group, an ethyl group, a linear or branched propyl group, a linear or branched butyl group, and a linear or branched pentyl group. Examples of the cycloalkyl group include cyclohexane having 3 to 8 carbon atoms. An alkyl group (for example, a cyclopentyl group, a cyclohexyl group) can be mentioned.

The alkoxy group as R _{1c to} R _{5c may} be linear, branched or cyclic, for example, an alkoxy group having 1 to 10 carbon atoms, preferably a linear or branched alkoxy group having 1 to 5 carbon atoms. (For example, methoxy group, ethoxy group, linear or branched propoxy group, linear or branched butoxy group, linear or branched pentoxy group), C3-C8 cyclic alkoxy group (for example, cyclopentyloxy group, cyclohexyloxy group) ).

Preferably, any of R _{1c to} R _5c is a linear or branched alkyl group, a cycloalkyl group, or a linear, branched or cyclic alkoxy group, and more preferably the sum of the carbon number of R _{1c to} R _5c. Is 2-15. Thereby, solvent solubility improves more and generation | occurrence | production of a particle is suppressed at the time of a preservation | save.

_Examples of the alkyl group and cycloalkyl group as R _x and R _y include the same alkyl group and cycloalkyl group as in R _{1c to} R _7c , such as a 2-oxoalkyl group, a 2-oxocycloalkyl group, an alkoxy group. A carbonylmethyl group is more preferred.

Examples of the 2-oxoalkyl group and 2-oxocycloalkyl group include a group having> C═O at the 2-position of the alkyl group or cycloalkyl group as R _{1c to} R _7c .

Examples of the alkoxy group in the alkoxycarbonylmethyl group include the same alkoxy groups as in R _{1c to} R _5c .

R _x and R _y are preferably an alkyl group or cycloalkyl group having 4 or more carbon atoms, more preferably 6 or more, and still more preferably 8 or more alkyl groups or cycloalkyl groups.

In the general formula (Z _IC1 )
The definition and preferred range of R are the same as the definition in general formula (I).
R ₂₀₄ to R ₂₀₅ each independently represents an aryl group, an alkyl group or a cycloalkyl group.
Aryl group R ₂₀₄ to R _205, Examples and preferred embodiments of the alkyl or cycloalkyl group has been described as the aryl group, alkyl group or cycloalkyl group of R ₂₀₄ to R ₂₀₅ in the general formula (ZII) It is the same as that.

Phenyl group and a naphthyl group are preferred as the aryl group of R ₂₀₄ to R _205, more preferably a phenyl group. Aryl group R ₂₀₄ to R ₂₀₅ represents an oxygen atom, a nitrogen atom, may be an aryl group having a heterocyclic structure having a sulfur atom and the like. Examples of the aryl group having a heterocyclic structure include a pyrrole residue (a group formed by losing one hydrogen atom from pyrrole) and a furan residue (a group formed by losing one hydrogen atom from furan). Groups), thiophene residues (groups formed by the loss of one hydrogen atom from thiophene), indole residues (groups formed by the loss of one hydrogen atom from indole), benzofuran residues ( A group formed by losing one hydrogen atom from benzofuran), a benzothiophene residue (a group formed by losing one hydrogen atom from benzothiophene), and the like.

The alkyl group and cycloalkyl group in R ₂₀₄ to R _205, preferably a linear or branched alkyl group having 1 to 10 carbon atoms (e.g., methyl group, ethyl group, propyl group, butyl group, pentyl group), carbon Examples thereof include cycloalkyl groups of several 3 to 10 (cyclopentyl group, cyclohexyl group, norbornyl group).

Aryl group, alkyl group of R ₂₀₄ to R _205, cycloalkyl groups may have a substituent. Aryl group, alkyl group of R ₂₀₄ to R _205, the cycloalkyl group substituent which may be possessed by, for example, an alkyl group (for example, 1 to 15 carbon atoms), a cycloalkyl group (for example, 3 to 15 carbon atoms ), An aryl group (for example, having 6 to 15 carbon atoms), an alkoxy group (for example, having 1 to 15 carbon atoms), a halogen atom, a hydroxyl group, and a phenylthio group.

  Specific examples of the compound represented by formula (I) include the following compounds, but are not limited thereto.

The compound represented by the general formula (I) can be synthesized by a known method, for example, according to the method described in JP-A No. 2007-161707.
The compound represented by general formula (I) can be used 1 type or in combination of 2 or more types.
The content of the compound represented by the general formula (I) in the composition is preferably 0.1 to 20% by mass, more preferably 0.5 to 10% by mass, based on the total solid content of the composition. More preferably, it is 1-7 mass%.

Solvent Examples of the solvent that can be used in preparing the actinic ray-sensitive or radiation-sensitive resin composition by dissolving the above components include, for example, alkylene glycol monoalkyl ether carboxylate, alkylene glycol monoalkyl ether, lactic acid Alkyl esters, alkyl alkoxypropionates, cyclic lactones (preferably having 4 to 10 carbon atoms), monoketone compounds that may contain rings (preferably having 4 to 10 carbon atoms), alkylene carbonates, alkyl alkoxyacetates, alkyl pyruvates, etc. The organic solvent can be mentioned.

Examples of the alkylene glycol monoalkyl ether carboxylate include propylene glycol monomethyl ether acetate (PGMEA; 1-methoxy-2-acetoxypropane), propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, propylene glycol monobutyl ether acetate, Preferred are propylene glycol monomethyl ether propionate, propylene glycol monoethyl ether propionate, ethylene glycol monomethyl ether acetate, and ethylene glycol monoethyl ether acetate.
Examples of the alkylene glycol monoalkyl ether include propylene glycol monomethyl ether (PGME; 1-methoxy-2-propanol), propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, ethylene glycol monomethyl ether, ethylene glycol Preferred is monoethyl ether.

Preferred examples of the alkyl lactate include methyl lactate, ethyl lactate, propyl lactate and butyl lactate.
Preferable examples of the alkyl alkoxypropionate include ethyl 3-ethoxypropionate, methyl 3-methoxypropionate, methyl 3-ethoxypropionate, and ethyl 3-methoxypropionate.

  Examples of the cyclic lactone include β-propiolactone, β-butyrolactone, γ-butyrolactone, α-methyl-γ-butyrolactone, β-methyl-γ-butyrolactone, γ-valerolactone, γ-caprolactone, and γ-octano. Preferred are iclactone and α-hydroxy-γ-butyrolactone.

  Examples of the monoketone compound which may contain a ring include 2-butanone, 3-methylbutanone, pinacolone, 2-pentanone, 3-pentanone, 3-methyl-2-pentanone, 4-methyl-2-pentanone, 2 -Methyl-3-pentanone, 4,4-dimethyl-2-pentanone, 2,4-dimethyl-3-pentanone, 2,2,4,4-tetramethyl-3-pentanone, 2-hexanone, 3-hexanone, 5-methyl-3-hexanone, 2-heptanone, 3-heptanone, 4-heptanone, 2-methyl-3-heptanone, 5-methyl-3-heptanone, 2,6-dimethyl-4-heptanone, 2-octanone, 3-octanone, 2-nonanone, 3-nonanone, 5-nonanone, 2-decanone, 3-decanone, 4-decanone, 5-hexen-2-one 3-penten-2-one, cyclopentanone, 2-methylcyclopentanone, 3-methylcyclopentanone, 2,2-dimethylcyclopentanone, 2,4,4-trimethylcyclopentanone, cyclohexanone, 3- Methylcyclohexanone, 4-methylcyclohexanone, 4-ethylcyclohexanone, 2,2-dimethylcyclohexanone, 2,6-dimethylcyclohexanone, 2,2,6-trimethylcyclohexanone, cycloheptanone, 2-methylcycloheptanone, 3-methyl Preferred is cycloheptanone.

Preferred examples of the alkylene carbonate include propylene carbonate, vinylene carbonate, ethylene carbonate, and butylene carbonate.
Examples of the alkyl alkoxyacetate include 2-methoxyethyl acetate, 2-ethoxyethyl acetate, 2- (2-ethoxyethoxy) ethyl acetate, 3-methoxy-3-methylbutyl acetate, and 1-methoxy-acetate. 2-propyl is preferred.
Preferred examples of the alkyl pyruvate include methyl pyruvate, ethyl pyruvate, and propyl pyruvate.
As a solvent which can be preferably used, a solvent having a boiling point of 130 ° C. or higher under normal temperature and normal pressure can be mentioned. Specifically, cyclopentanone, γ-butyrolactone, cyclohexanone, ethyl lactate, ethylene glycol monoethyl ether acetate, propylene glycol monomethyl ether acetate, ethyl 3-ethoxypropionate, ethyl pyruvate, 2-ethoxyethyl acetate, acetic acid -2- (2-ethoxyethoxy) ethyl and propylene carbonate are mentioned.
In the present invention, the above solvents may be used alone or in combination of two or more.

In this invention, you may use the mixed solvent which mixed the solvent which contains a hydroxyl group in a structure, and the solvent which does not contain a hydroxyl group as an organic solvent.
As the solvent containing a hydroxyl group and the solvent not containing a hydroxyl group, the above-mentioned exemplary compounds can be selected as appropriate, but as the solvent containing a hydroxyl group, alkylene glycol monoalkyl ether, alkyl lactate, etc. are preferable, propylene glycol monomethyl ether, More preferred is ethyl lactate. Further, as the solvent not containing a hydroxyl group, alkylene glycol monoalkyl ether acetate, alkyl alkoxypropionate, monoketone compound which may contain a ring, cyclic lactone, alkyl acetate and the like are preferable, and among these, propylene glycol monomethyl ether Acetate, ethyl ethoxypropionate, 2-heptanone, γ-butyrolactone, cyclohexanone and butyl acetate are particularly preferred, and propylene glycol monomethyl ether acetate, ethyl ethoxypropionate and 2-heptanone are most preferred.
The mixing ratio (mass) of the solvent containing a hydroxyl group and the solvent not containing a hydroxyl group is 1/99 to 99/1, preferably 10/90 to 90/10, more preferably 20/80 to 60/40. . A mixed solvent containing 50% by mass or more of a solvent not containing a hydroxyl group is particularly preferred from the viewpoint of coating uniformity.

  The solvent is preferably a mixed solvent of two or more containing propylene glycol monomethyl ether acetate.

Basic Compound The actinic ray-sensitive or radiation-sensitive resin composition of the present invention preferably contains a basic compound in order to reduce a change in performance over time from exposure to heating.
Preferred examples of the basic compound include compounds having structures represented by the following formulas (A) to (E).

In general formulas (A) and (E),
R ²⁰⁰ , R ²⁰¹ and R ²⁰² may be the same or different, and are a hydrogen atom, an alkyl group (preferably having 1 to 20 carbon atoms), a cycloalkyl group (preferably having 3 to 20 carbon atoms) or an aryl group (having a carbon number). 6-20), wherein R ²⁰¹ and R ²⁰² may combine with each other to form a ring. R ²⁰³ , R ²⁰⁴ , R ²⁰⁵ and R ²⁰⁶ may be the same or different and each represents an alkyl group having 1 to 20 carbon atoms.
About the said alkyl group, as an alkyl group which has a substituent, a C1-C20 aminoalkyl group, a C1-C20 hydroxyalkyl group, or a C1-C20 cyanoalkyl group is preferable.
The alkyl groups in the general formulas (A) and (E) are more preferably unsubstituted.

  Preferred compounds include guanidine, aminopyrrolidine, pyrazole, pyrazoline, piperazine, aminomorpholine, aminoalkylmorpholine, piperidine and the like, and more preferred compounds include imidazole structure, diazabicyclo structure, onium hydroxide structure, onium carboxylate Examples thereof include a compound having a structure, a trialkylamine structure, an aniline structure or a pyridine structure, an alkylamine derivative having a hydroxyl group and / or an ether bond, and an aniline derivative having a hydroxyl group and / or an ether bond.

  Examples of the compound having an imidazole structure include imidazole, 2,4,5-triphenylimidazole, benzimidazole, and 2-phenylbenzimidazole. Examples of the compound having a diazabicyclo structure include 1,4-diazabicyclo [2,2,2] octane, 1,5-diazabicyclo [4,3,0] non-5-ene, and 1,8-diazabicyclo [5,4,0. ] Undecar 7-ene etc. are mentioned. Examples of the compound having an onium hydroxide structure include tetrabutylammonium hydroxide, triarylsulfonium hydroxide, phenacylsulfonium hydroxide, sulfonium hydroxide having a 2-oxoalkyl group, specifically, triphenylsulfonium hydroxide, tris ( and t-butylphenyl) sulfonium hydroxide, bis (t-butylphenyl) iodonium hydroxide, phenacylthiophenium hydroxide, 2-oxopropylthiophenium hydroxide, and the like. As the compound having an onium carboxylate structure, an anion portion of the compound having an onium hydroxide structure is converted to a carboxylate, and examples thereof include acetate, adamantane-1-carboxylate, and perfluoroalkylcarboxylate. Examples of the compound having a trialkylamine structure include tri (n-butyl) amine and tri (n-octyl) amine. Examples of the aniline compound include 2,6-diisopropylaniline, N, N-dimethylaniline, N, N-dibutylaniline, N, N-dihexylaniline and the like. Examples of the alkylamine derivative having a hydroxyl group and / or an ether bond include ethanolamine, diethanolamine, triethanolamine, N-phenyldiethanolamine, and tris (methoxyethoxyethyl) amine. Examples of aniline derivatives having a hydroxyl group and / or an ether bond include N, N-bis (hydroxyethyl) aniline.

Preferred examples of the basic compound further include an amine compound having a phenoxy group, an ammonium salt compound having a phenoxy group, an amine compound having a sulfonic acid ester group, and an ammonium salt compound having a sulfonic acid ester group.
The amine compound having a phenoxy group, the ammonium salt compound having a phenoxy group, the amine compound having a sulfonate group, and the ammonium salt compound having a sulfonate group have at least one alkyl group bonded to a nitrogen atom. Is preferred. The alkyl chain preferably has an oxygen atom and an oxyalkylene group is formed. The number of oxyalkylene groups is one or more in the molecule, preferably 3 to 9, and more preferably 4 to 6. -CH ₂ CH ₂ O Among the oxyalkylene group _{-, - CH (CH 3)} CH 2 O- or -CH ₂ CH ₂ CH ₂ O- structure is preferred.
Specific examples of the amine compound having a phenoxy group, an ammonium salt compound having a phenoxy group, an amine compound having a sulfonic acid ester group, and an ammonium salt compound having a sulfonic acid ester group are disclosed in US Patent Application Publication No. 2007 / 0224539A [ [0066] The compounds (C1-1) to (C3-3) exemplified in the above are exemplified, but not limited thereto.

  These basic compounds are used alone or in combination of two or more.

  The usage-amount of a basic compound is 0.001-10 mass% normally on the basis of solid content of actinic-ray-sensitive or radiation-sensitive resin composition, Preferably it is 0.01-5 mass%.

  The use ratio of the acid generator and the basic compound in the composition is preferably acid generator / basic compound (molar ratio) = 2.5 to 300. In other words, the molar ratio is preferably 2.5 or more from the viewpoint of sensitivity and resolution, and is preferably 300 or less from the viewpoint of suppressing the reduction in resolution due to the thickening of the resist pattern over time until post-exposure heat treatment. The acid generator / basic compound (molar ratio) is more preferably 5.0 to 200, still more preferably 7.0 to 150.

Surfactant The actinic ray-sensitive or radiation-sensitive resin composition preferably further contains a surfactant, and a fluorine-based and / or silicon-based surfactant (fluorine-based surfactant, silicon-based surfactant, It is more preferable to contain either one or two or more surfactants having both fluorine atoms and silicon atoms.

When the composition of the present invention contains the above-described surfactant, it is possible to provide a resist pattern with less adhesion and development defects with good sensitivity and resolution when using an exposure light source of 250 nm or less, particularly 220 nm or less. It becomes.
Examples of the fluorine-based and / or silicon-based surfactant include surfactants described in [0276] of US Patent Application Publication No. 2008/0248425. For example, Ftop EF301, EF303, (Shin-Akita Kasei Co., Ltd.) )), FLORARD FC430, 431, 4430 (manufactured by Sumitomo 3M Co., Ltd.), Megafac F171, F173, F176, F189, F113, F110, F177, F120, R08 (manufactured by Dainippon Ink & Chemicals, Inc.), Surflon S-382, SC101, 102, 103, 104, 105, 106 (manufactured by Asahi Glass Co., Ltd.), Troisol S-366 (manufactured by Troy Chemical Co., Ltd.), GF-300, GF-150 (Toagosei Chemical Co., Ltd.) ), Surflon S-393 (manufactured by Seimi Chemical Co., Ltd.), F-top EF121, EF122A EF122B, RF122C, EF125M, EF135M, EF351, EF352, EF801, EF802, EF601 (manufactured by Gemco), PF636, PF656, PF6320, PF6520 (manufactured by OMNOVA), FTX-204G, 208G, 218G230G 208D, 212D, 218D, 222D (manufactured by Neos Co., Ltd.) and the like. Polysiloxane polymer KP-341 (manufactured by Shin-Etsu Chemical Co., Ltd.) can also be used as a silicon-based surfactant.

In addition to the known surfactants described above, the surfactant is derived from a fluoroaliphatic compound produced by a telomerization method (also called telomer method) or an oligomerization method (also called oligomer method). A surfactant using a polymer having a fluoroaliphatic group can be used. The fluoroaliphatic compound can be synthesized by the method described in JP-A-2002-90991.
As the polymer having a fluoroaliphatic group, a copolymer of a monomer having a fluoroaliphatic group and (poly (oxyalkylene)) acrylate and / or (poly (oxyalkylene)) methacrylate is preferable and distributed irregularly. Or may be block copolymerized. Examples of the poly (oxyalkylene) group include a poly (oxyethylene) group, a poly (oxypropylene) group, a poly (oxybutylene) group, and the like, and a poly (oxyethylene, oxypropylene, and oxyethylene group). A unit having different chain lengths in the same chain length, such as a block link) or poly (block link of oxyethylene and oxypropylene) may be used. Furthermore, a copolymer of a monomer having a fluoroaliphatic group and (poly (oxyalkylene)) acrylate (or methacrylate) is not only a binary copolymer but also a monomer having two or more different fluoroaliphatic groups, Further, it may be a ternary or higher copolymer obtained by simultaneously copolymerizing two or more different (poly (oxyalkylene)) acrylates (or methacrylates).

For example, as a commercially available surfactant, Megafac F178, F-470, F-473, F-475, F-476, F-472 (manufactured by Dainippon Ink & Chemicals, Inc.), C ₆ F ₁₃ group Copolymer of acrylate (or methacrylate) and (poly (oxyalkylene)) acrylate (or methacrylate), acrylate (or methacrylate) and (poly (oxyethylene)) acrylate (or methacrylate) having C ₃ F ₇ groups And a copolymer of (poly (oxypropylene)) acrylate (or methacrylate).

  In the present invention, surfactants other than fluorine-based and / or silicon-based surfactants described in [0280] of US Patent Application Publication No. 2008/0248425 can also be used.

These surfactants may be used alone or in several combinations.

  The amount of the surfactant used is preferably 0.0001 to 2% by mass, more preferably 0.001 to 1% by mass, based on the total amount of the actinic ray-sensitive or radiation-sensitive resin composition (excluding the solvent). is there.

Carboxylic acid onium salt The actinic ray-sensitive or radiation-sensitive resin composition in the present invention may contain a carboxylic acid onium salt. As the carboxylic acid onium salt, an iodonium salt and a sulfonium salt are preferable. As the anion moiety, a linear, branched, monocyclic or polycyclic cycloalkylcarboxylic acid anion having 1 to 30 carbon atoms is preferable. More preferably, an anion of a carboxylic acid in which some or all of these alkyl groups are fluorine-substituted is preferable. The alkyl chain may contain an oxygen atom. This ensures transparency with respect to light of 220 nm or less, improves sensitivity and resolution, and improves density dependency and exposure margin.

  Fluorine-substituted carboxylic acid anions include fluoroacetic acid, difluoroacetic acid, trifluoroacetic acid, pentafluoropropionic acid, heptafluorobutyric acid, nonafluoropentanoic acid, perfluorododecanoic acid, perfluorotridecanoic acid, perfluorocyclohexanecarboxylic acid, 2 , 2-bistrifluoromethylpropionic acid anion and the like.

  The content of the carboxylic acid onium salt in the composition is generally 0.1 to 20% by mass, preferably 0.5 to 10% by mass, more preferably 1 to 7% by mass, based on the total solid content of the composition. %.

Dissolution-inhibiting compound having a molecular weight of 3000 or less that decomposes by the action of an acid to increase the solubility in an alkali developer. Dissolution-inhibiting compound having a molecular weight of 3000 or less that decomposes by the action of an acid to increase the solubility in an alkali developer. (Hereinafter also referred to as “dissolution-inhibiting compound”), since it does not lower the permeability of 220 nm or less, like cholic acid derivatives containing acid-decomposable groups described in Proceeding of SPIE, 2724,355 (1996). An alicyclic or aliphatic compound containing an acid-decomposable group is preferred. Examples of the acid-decomposable group and alicyclic structure are the same as those described for the component (B) resin.

  When the actinic ray-sensitive or radiation-sensitive resin composition of the present invention is exposed with a KrF excimer laser or irradiated with an electron beam, the phenolic hydroxyl group of the phenol compound is an acid-decomposable group as a dissolution inhibiting compound. Those containing a structure substituted with are preferred. As a phenol compound, what contains 1-9 phenol frame | skeleton is preferable, More preferably, it contains 2-6 pieces.

  The addition amount of the dissolution inhibiting compound is preferably 3 to 50% by mass, more preferably 5 to 40% by mass, based on the total solid content of the actinic ray-sensitive or radiation-sensitive resin composition.

  Specific examples of the dissolution inhibiting compound are shown below, but the present invention is not limited thereto.

Other Additives In the actinic ray-sensitive or radiation-sensitive resin composition of the present invention, a compound that further promotes solubility in dyes, plasticizers, photosensitizers, light absorbers, and developers as necessary. (For example, a phenol compound having a molecular weight of 1000 or less, an alicyclic compound having a carboxyl group, or an aliphatic compound) and the like can be contained.

Such phenolic compounds having a molecular weight of 1000 or less can be obtained by referring to, for example, the methods described in JP-A-4-1222938, JP-A-2-28531, US Pat. No. 4,916,210, European Patent 219294, etc. It can be easily synthesized by those skilled in the art.
Specific examples of alicyclic or aliphatic compounds having a carboxyl group include carboxylic acid derivatives having a steroid structure such as cholic acid, deoxycholic acid, lithocholic acid, adamantane carboxylic acid derivatives, adamantane dicarboxylic acid, cyclohexane carboxylic acid, cyclohexane Examples thereof include, but are not limited to, dicarboxylic acids.

Pattern Forming Method The actinic ray-sensitive or radiation-sensitive resin composition of the present invention is preferably used at a film thickness of 30 to 250 nm, more preferably at a film thickness of 30 to 200 nm, from the viewpoint of improving resolution. It is preferable. By setting the solid content concentration in the actinic ray-sensitive or radiation-sensitive resin composition to an appropriate range to have an appropriate viscosity, and improving the coating property and film forming property, such a film thickness is obtained. Can do.
The total solid concentration in the actinic ray-sensitive or radiation-sensitive resin composition is generally 1 to 10% by mass, more preferably 1 to 8.0% by mass, and still more preferably 1.0 to 6.0. It is 2.0 mass%, Most preferably, it is 2.0-4.0 mass%.

  The actinic ray-sensitive or radiation-sensitive resin composition of the present invention is prepared by dissolving the above-described components in a predetermined organic solvent, preferably the mixed solvent, filtered, and applied onto a predetermined support as follows. And use. The pore size of the filter used for filter filtration is preferably 0.1 microns or less, more preferably 0.05 microns or less, and even more preferably 0.03 microns or less made of polytetrafluoroethylene, polyethylene, or nylon.

For example, an actinic ray-sensitive or radiation-sensitive resin composition is applied to a substrate (eg, silicon / silicon dioxide coating) used for manufacturing a precision integrated circuit element by an appropriate application method such as a spinner or a coater. Dry to form a film.
The film is irradiated with actinic rays or radiation through a predetermined mask, preferably baked (heated), developed and rinsed. Thereby, a good pattern can be obtained.

Examples of the actinic ray or radiation include infrared light, visible light, ultraviolet light, far ultraviolet light, extreme ultraviolet light, X-ray, electron beam, etc., preferably 250 nm or less, more preferably 220 nm or less, particularly Preferably, far ultraviolet light having a wavelength of 1 to 200 nm, specifically KrF excimer laser (248 nm), ArF excimer laser (193 nm), F ₂ excimer laser (157 nm), X-ray, electron beam, etc., ArF excimer Laser, F ₂ excimer laser, EUV (13 nm), and electron beam are preferable.

Before forming the film, an antireflection film may be previously coated on the substrate.
As the antireflection film, any of an inorganic film type such as titanium, titanium dioxide, titanium nitride, chromium oxide, carbon, and amorphous silicon, and an organic film type made of a light absorber and a polymer material can be used. In addition, as the organic antireflection film, commercially available organic antireflection films such as DUV30 series, DUV-40 series manufactured by Brewer Science, AR-2, AR-3, AR-5 manufactured by Shipley, etc. may be used. it can.

As the alkaline developer in the development step, a quaternary ammonium salt typified by tetramethylammonium hydroxide is usually used. In addition, inorganic alkali, primary amine, secondary amine, tertiary amine, alcohol amine are also used. An aqueous alkali solution such as a cyclic amine can also be used.
Furthermore, alcohols and surfactants can be added in appropriate amounts to the alkaline developer.
The alkali concentration of the alkali developer is usually from 0.1 to 20% by mass.
The pH of the alkali developer is usually from 10.0 to 15.0.
Furthermore, alcohols and surfactants can be added in appropriate amounts to the alkaline aqueous solution.
As the rinsing liquid, pure water can be used, and an appropriate amount of a surfactant can be added.
Further, after the development process or the rinsing process, a process of removing the developer or the rinsing liquid adhering to the pattern with a supercritical fluid can be performed.

The structure of the acid-decomposable resin (A) used in the examples is shown below. A weight average molecular weight (Mw) and dispersity (Mw / Mn) are shown. Table 1 below shows the molar ratio of the repeating units in each resin (in order from the left in the structural formula).
Synthesis Example: Synthesis of Resin (A-2) In the structural formula of the following resin (A-2), in order from the left of the structural formula, monomers corresponding to the respective repeating units are 40/10/30/10/10. The mixture was charged at a ratio (molar ratio) and dissolved in cyclohexanone to prepare 450 g of a solution having a solid content concentration of 15% by mass. 1 mol% of a polymerization initiator V-60 manufactured by Wako Pure Chemical Industries, Ltd. was added to this solution, and this was added dropwise to 50 g of cyclohexanone heated to 100 ° C. in a nitrogen atmosphere over 6 hours. The reaction liquid was stirred for 2 hours after completion | finish of dripping. After completion of the reaction, the reaction solution was cooled to room temperature, crystallized in 5 L of methanol, and the precipitated white powder was collected by filtration to recover the target resin (A-2).
The weight average molecular weight in terms of standard polystyrene determined by GPC measurement was 10,000 and the degree of dispersion was 1.6.
Other polymers were synthesized in the same manner.

<Resist preparation>
The components shown in Table 2 below are dissolved in a solvent, and a solution with a solid content of 5% by mass is prepared for each, and this is filtered through a polyethylene filter having a pore size of 0.1 μm, and an actinic ray-sensitive or radiation-sensitive resin composition. A product was prepared. The prepared actinic ray-sensitive or radiation-sensitive resin composition was evaluated by the following method, and the results are shown in Table 2.

<Pattern formation>
An organic antireflection film ARC29A (Nissan Chemical Co., Ltd.) was applied on a silicon wafer and baked at 205 ° C. for 60 seconds to form an antireflection film having a thickness of 78 nm. The actinic ray-sensitive or radiation-sensitive resin composition prepared thereon was applied and baked at 100 ° C. for 60 seconds to form a film having a thickness of 120 nm. The obtained wafer was used with an ArF excimer laser immersion scanner (manufactured by ASML XT1700i, NA1.20, C-Quad, outer sigma 0.981, inner sigma 0.895, XY deflection), and 6% half of 65 nm 1: 1 line and space pattern. Exposed through tone mask. Ultra pure water was used as the immersion liquid. Thereafter, heating was performed at 100 ° C. for 60 seconds, followed by development with an aqueous tetramethylammonium hydroxide solution (2.38 mass%) for 30 seconds, rinsing with pure water, and spin drying to obtain a pattern.
<Development defect evaluation>
The number of development defects of the repetitive pattern obtained by the above pattern formation was measured with a KLA2360 machine (manufactured by KLA Tencor) (Threshold = 12, Pixel size = 0.39). The evaluation results are shown as the number of defects per 12-inch wafer.

[DOF evaluation]
The focal depth of the pattern was changed, and the length was measured with a length measurement SEM (Hitachi, Ltd. S-8840), and the pattern line width (CD) at each depth of focus was measured. The range of the depth of focus where the CD is 65 nm ± 6.5 nm was quantified as DOF.

(Surface roughness evaluation)
The upper portion of the rough surface in the line width 65nm of patterns observed have use of a scanning electron microscope (manufactured by Hitachi S-4800), × what surface roughness is seen more than 90% of the pattern upper, more than 50%, less than 90% △, 20% or more, and less than 50% are observed as ○ , and less than 20% are evaluated as ◎.
Hereinafter, Examples 3, 11, 19, 27, 28, 35, 37, and 38 shall be read as Reference Examples 3, 11, 19, 27, 28, 35, 37, and 38, respectively.

The symbols in Table 2 are as follows.
The acid generator and the resin (C) correspond to those exemplified above.

[Basic compounds]
N-1: N, N-dibutylaniline N-2: N, N-dihexylaniline N-3: 2,6-diisopropylaniline N-4: tri-n-octylamine N-5: N, N-dihydroxyethyl Aniline N-6: 2,4,5-triphenylimidazole N-7: Tris (methoxyethoxyethyl) amine N-8: 2- [2- {2- (2,2-dimethoxy-phenoxyethoxy) ethyl}- Bis- (2-methoxyethyl)]-amine

[Surfactant]
W-1: Megafac F176 (Dainippon Ink Chemical Co., Ltd., fluorine-based)
W-2: Megafuck R08 (Dainippon Ink Chemical Co., Ltd., fluorine and silicon)
W-3: Polysiloxane polymer KP-341 (manufactured by Shin-Etsu Chemical Co., Ltd., silicon-based)
W-4: Troisol S-366 (manufactured by Troy Chemical Co., Ltd.)
W-5: PF656 (manufactured by OMNOVA, fluorine-based)
W-6: PF6320 (manufactured by OMNOVA, fluorine-based)

〔solvent〕
SL-1: Cyclohexanone SL-2: Propylene glycol monomethyl ether acetate (PGMEA)
SL-3: Ethyl lactate SL-4: Propylene glycol monomethyl ether (PGME)
SL-5: γ-butyrolactone SL-6: Propylene carbonate

  From Table 2, it was found that the pattern formed using the actinic ray-sensitive or radiation-sensitive resin composition of the present invention had excellent performance in any of development defects, surface roughness, and DOF.

Claims (5)

(A) a resin having a repeating unit represented by any one of the following general formulas (Y2), (Y3), (Y5) and (Y6), which increases the dissolution rate in an alkaline developer by the action of an acid;
(B) a compound that generates an acid upon irradiation with an actinic ray or radiation, and
(C) A resin having a repeating unit (c ′) having at least one of a fluorine atom and a silicon atom and at least one polarity converting group on one side chain, and the content of the resin (A) However, it is 50 to 99 mass% with respect to the total solid content of the actinic ray-sensitive or radiation-sensitive resin composition, and the content of the resin (C) is 0.01 to 10 mass with respect to the total solid content. %, Actinic ray-sensitive or radiation-sensitive resin composition .

In the general formula (Y2),
n represents an integer of 0 to 5, and m represents an integer of 0 to 2.
X _a and X _b each independently represent a hydrogen atom, a fluorine atom, or an alkyl group, and may be bonded to each other to form a ring.
X ₁ and X ₂ are each independently a hydrogen atom, a fluorine atom, an alkyl group or a fluorinated alkyl group, and one or both of X ₁ and X ₂ contain at least one fluorine atom. .
R ₁ is a hydrogen atom, an alkyl group, a cycloalkyl group, or an acid-decomposable group.
R ₂ is a hydrogen atom, a fluorine atom, an alkyl group or a fluorinated alkyl group.

In the general formula (Y3),
R ₄ is a hydrogen atom, a fluorine atom, or an alkyl group or cycloalkyl group which may be fluorinated.
R ₅ represents a single bond or a divalent hydrocarbon group.
l represents an integer of 1 to 5, and q represents an integer of 0 to 4.
X ₁ and X ₂ are each independently a hydrogen atom, a fluorine atom, an alkyl group or a fluorinated alkyl group, and one or both of X ₁ and X ₂ contain at least one fluorine atom. .
R ₁ is a hydrogen atom, an alkyl group, a cycloalkyl group, or an acid-decomposable group.
R ₂ is a hydrogen atom, a fluorine atom, an alkyl group or a fluorinated alkyl group.

In the general formula (Y5),
R ₁₁ represents a single bond or an alkylene group which may be substituted with at least one fluorine atom. R ₈ and R ₉ each independently represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group.
R ₇ and R ₁₀ each independently represents a single bond or —O— or —C (R ₁₂ ) (R ₁₃ ) —.
R ₆ , R ₁₂ and R ₁₃ each independently represents a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group.
R ₂ is a hydrogen atom, a fluorine atom, an alkyl group or a fluorinated alkyl group.
X ₄ is a single bond, —O—, —C (═O) —O—, —C (═O) —O—R ₁₄ — or —C (═O) —NH—R ₁₄ —, ₁₄ is a single bond or a linear, branched or cyclic alkylene group, and the alkylene group may have an ester group or an ether group in the chain.

In the general formula (Y6),
R ₁₅ represents a linear or branched hydrocarbon group or a divalent hydrocarbon group having a cyclic hydrocarbon structure.
R ₁ is a hydrogen atom, an alkyl group, a cycloalkyl group, or an acid-decomposable group.
R ₂ is a hydrogen atom, a fluorine atom, an alkyl group or a fluorinated alkyl group.
X ₄ is a single bond, —O—, —C (═O) —O—, —C (═O) —O—R ₁₄ — or —C (═O) —NH—R ₁₄ —, ₁₄ is a single bond or a linear, branched or cyclic alkylene group, and the alkylene group may have an ester group or an ether group in the chain. Further, surfactants, basic compounds, sensitive or radiation-sensitive resin composition according to claim 1, characterized in that it contains a solvent.   A resist film formed using the actinic ray-sensitive or radiation-sensitive resin composition according to claim 1. A pattern forming method comprising: forming a film using the actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 or 2 ; and exposing and developing the film. 5. The pattern forming method according to claim 4 , wherein the exposure method according to claim 4 is immersion exposure.