JP5425423B2 - Transparent conductive film and touch panel, and method for producing transparent conductive film - Google Patents

Description

  The present invention relates to a transparent conductive film, a touch panel using the same, and a method for producing a transparent conductive film.

  Conventionally, as a transparent conductive member, so-called conductive glass in which an indium oxide thin film is formed on glass is well known, but conductive glass is flexible and workable because the base material is glass. It is inferior and may not be preferable depending on the application. Therefore, in recent years, transparent conductive films based on various plastic films such as polyethylene terephthalate film have been used because of their advantages such as excellent impact resistance and light weight in addition to flexibility and workability. Has been.

  In the conventional transparent conductive film, it is caused by light interference of reflected light at the interface between the transparent film substrate and the transparent conductive layer and between the transparent conductive layer and the air, light absorption of the transparent conductive layer itself, or the like. In many cases, the light transmitted through the transparent film substrate is colored. If the degree of coloring is significant, it is not preferable because it causes a change in the hue of the display screen.

In order to suppress the coloring of transmitted light, for example, in Patent Document 1 below, the first transparent dielectric thin film and the second transparent dielectric thin film are formed on one side of the transparent film substrate from the transparent film substrate side. And the transparent conductive thin film is formed in this order. When the refractive index of the first transparent dielectric thin film is n1, the refractive index of the second transparent dielectric thin film is n2, and the refractive index of the transparent conductive thin film is n3, n2 < A transparent conductive laminate satisfying the relationship of n3 ≦ n1 is described. Further, in Patent Document 1, for the purpose of improving productivity and the like, it is composed of a composite oxide containing 0 to 20 parts by weight of tin oxide and 10 to 40 parts by weight of cerium oxide with respect to 100 parts by weight of indium oxide. A first transparent dielectric thin film is used.
JP 2006-346878 A

  When applying a transparent conductive film to a touch panel, it is often used in combination with a display such as a liquid crystal display, in order to reduce the power consumption of the light source of the display from the viewpoint of cost reduction and environmental load reduction, There is a need for a transparent conductive film having a high total light transmittance. Although the transparency can be improved also by the transparent conductive film described in Patent Document 1, it is still insufficient to reduce the power consumption of the light source of the display.

  In order to solve the above problems, the present invention forms a first transparent dielectric layer, a second transparent dielectric layer, and a transparent conductive layer in this order on one side of a transparent film substrate from the transparent film substrate side. An object of the present invention is to provide a transparent conductive film which can suppress coloring of transmitted light and has a high total light transmittance and a method for producing the transparent conductive film. Another object of the present invention is to provide a touch panel using the transparent conductive film.

  In order to achieve the above object, the transparent conductive film of the present invention has a first transparent dielectric layer, a second transparent dielectric layer, and a transparent conductive material on one side of the transparent film substrate from the transparent film substrate side. The first transparent dielectric layer is formed of indium oxide, 0 to 20 parts by weight of tin oxide with respect to 100 parts by weight of indium oxide, and the oxidized film. It is made of a complex oxide containing more than 40 parts by weight and 80 parts by weight or less of cerium oxide with respect to 100 parts by weight of indium. The refractive index of the first transparent dielectric layer is n1, and the second transparent dielectric layer has When the refractive index is n2 and the refractive index of the transparent conductive layer is n3, the relationship of n2 <n3 ≦ n1 is satisfied.

  In the present invention, since the refractive index of each layer has the above relationship, coloring of transmitted light can be suppressed. In the present invention, the first transparent dielectric layer is formed of a composite oxide containing a specific amount of tin oxide and cerium oxide with respect to indium oxide. According to the composite oxide, a high refractive index higher than the refractive index of the transparent conductive layer can be realized. As a result, a difference in refractive index between the first transparent dielectric layer and the second transparent dielectric layer is increased, and optical adjustment can be easily performed, and a transparent conductive film having high total light transmittance is provided. it can. Therefore, when the transparent conductive film of this invention is applied to a touch panel, the power consumption of the light source of a display can be reduced. Moreover, since the transparent conductive film of the present invention has two transparent dielectric layers, a first transparent dielectric layer and a second transparent dielectric layer, between the transparent conductive layer and the transparent film substrate. Flexibility and scratch resistance of the transparent conductive layer are improved. The refractive index in the present invention is a refractive index with respect to light having a wavelength of 589.3 nm.

  The first transparent dielectric layer preferably has a thickness of 2 to 200 nm. This is because the continuous coating can be easily formed and the optical adjustment is also facilitated. In particular, in order to improve the optical visibility of the transparent conductive film, the thickness of the first transparent dielectric layer is preferably 2 nm or more and less than 10 nm. If the thickness of the first transparent dielectric layer is 2 nm or more, the thickness uniformity can be ensured. Moreover, if the thickness of a 1st transparent dielectric material layer is less than 10 nm, the fall of a surface resistance value can be prevented.

The first transparent dielectric layer preferably has a surface resistance value of 1.0 × 10 ¹⁰ Ω / □ or more, and more preferably 1.0 × 10 ¹¹ Ω / □ or more. If the surface resistance value is 1.0 × 10 ¹⁰ Ω / □ or more, it is possible to prevent the transparent conductive layer from conducting through the first transparent dielectric layer, thereby improving the input accuracy.

  The first transparent dielectric layer is preferably formed by a vacuum deposition method, a sputtering method, or an ion plating method. This is because any of the above-described production methods is a production method with easy thickness control, so that a first transparent dielectric layer having a uniform thickness can be obtained. In particular, in order to easily control the thickness of the first transparent dielectric layer to a thickness of 2 nm or more and less than 10 nm, it is preferable to form the film in a state in which impurity gas in the film forming atmosphere is eliminated as much as possible.

  The transparent film substrate preferably has a thickness of 2 to 200 μm. This is because it is easy to reduce the film thickness while ensuring the mechanical strength.

  The transparent conductive film of the present invention preferably has a total light transmittance of 91.0% or more. If the total light transmittance is 91.0% or more, the power consumption of the light source of the display can be easily reduced.

  The transparent conductive film of the present invention may further include a transparent substrate bonded to the other surface of the transparent film substrate via a transparent adhesive layer. This is because the mechanical strength of the film is improved, and curling and the like can be prevented.

  The touch panel of the present invention is a touch panel in which a pair of panel plates having a transparent conductive layer are arranged via a spacer so that the transparent conductive layers face each other, and at least one of the panel plates is described above. It is a touch panel containing the transparent conductive film of this invention. According to the touch panel of the present invention, the same effect as the above-described transparent conductive film of the present invention can be obtained.

  The manufacturing method of the transparent conductive film of this invention is a manufacturing method for manufacturing the transparent conductive film of this invention mentioned above, Comprising: From one side of a transparent film base material, the said transparent film base material side Forming a first transparent dielectric layer, a second transparent dielectric layer, and a transparent conductive layer in this order; According to this method, the above-described transparent conductive film of the present invention can be easily produced.

  Preferred embodiments of the present invention will be described below with reference to the drawings. In addition, the same code | symbol is attached | subjected to the same component and the overlapping description is abbreviate | omitted.

  FIG. 1 shows an example of the transparent conductive film of the present invention. On one surface of a transparent film substrate F, a first transparent dielectric layer 1, a second transparent dielectric layer 2, and a transparent conductive film are shown. Layer 3 is formed in this order.

  FIG. 2 shows an example in which a transparent substrate T is bonded to the other surface of the transparent film base F of the transparent conductive film shown in FIG. 1 via a transparent adhesive layer A. Although not shown, a hard coat layer or the like can be provided on the outer surface of the transparent substrate T in FIG.

  Although it does not restrict | limit especially as the transparent film base material F used in this invention, The various plastic film which has transparency is used. For example, the materials include polyester resins, acetate resins, polyethersulfone resins, polycarbonate resins, polyamide resins, polyimide resins, polyolefin resins, (meth) acrylic resins, polyvinyl chloride resins, poly Examples thereof include vinylidene chloride resins, polystyrene resins, polyvinyl alcohol resins, polyarylate resins, polyphenylene sulfide resins, and the like. Among these, polyester resins are preferable from the viewpoint of cost. The refractive index of the transparent film substrate F is usually about 1.4 to 1.7.

  The thickness of the transparent film substrate F is preferably in the range of 2 to 200 μm, and more preferably in the range of 20 to 150 μm. This is because it is easy to reduce the film thickness while ensuring the mechanical strength.

  The transparent film substrate F is subjected to etching treatment such as sputtering, corona discharge, flame, ultraviolet irradiation, electron beam irradiation, chemical conversion, oxidation, formation of a hard coat layer, or undercoating on the surface in advance. The adhesiveness with respect to the transparent film base material F of the provided 1st transparent dielectric material layer 1 can be improved. Moreover, before providing the 1st transparent dielectric material layer 1, you may remove and clean the surface of the transparent film base material F by solvent washing | cleaning, ultrasonic washing | cleaning, etc. as needed.

  The transparent film base F is provided with a first transparent dielectric layer 1, a second transparent dielectric layer 2, and a transparent conductive layer 3 in this order. The refractive index n1 of the first transparent dielectric layer 1, the refractive index n2 of the second transparent dielectric layer 2, and the refractive index n3 of the transparent conductive layer 3 satisfy the relationship n2 <n3 ≦ n1. Normally, the refractive index n3 of the transparent conductive layer 3 is about 2 (usually 1.9 to 2.1), and in this case, the refractive index n1 of the first transparent dielectric layer 1 is usually 2.15. About 2.30, more preferably 2.20-2.30, and the refractive index n2 of the second transparent dielectric layer 2 is usually about 1.3-1.7, further 1.4. It is preferable that it is -1.6.

  The first transparent dielectric layer 1 is formed of a composite oxide containing specific amounts of tin oxide and cerium oxide with respect to 100 parts by weight of indium oxide. As a forming material, it is preferable to use a sintered body of a mixture of each oxide component. In the composite oxide, the proportion of tin oxide is 0 to 20 parts by weight with respect to 100 parts by weight of indium oxide from the viewpoint of optical characteristics. Furthermore, it is preferable that it is 3-15 weight part. The proportion of cerium oxide is more than 40 parts by weight and 80 parts by weight or less with respect to 100 parts by weight of indium oxide from the viewpoint of optical characteristics. Furthermore, it exceeds 40 parts by weight and is preferably 70 parts by weight or less, more preferably exceeds 40 parts by weight and is 65 parts by weight or less. When the ratio of cerium oxide exceeds 40 parts by weight, a high refractive index equal to or higher than the refractive index of the transparent conductive layer can be easily realized, and the surface resistance value can be increased. Moreover, if it is the range of 80 weight part or less, a 1st transparent dielectric material layer can be formed, without reducing a sputtering rate. In addition, other components such as Al, Sb, Ga, Ge, and Zn may be added to the composite oxide as components other than indium oxide, tin oxide, and cerium oxide.

Examples of the material of the second transparent dielectric layer 2 include NaF (1.3), Na ₃ AlF ₆ (1.35), LiF (1.36), MgF ₂ (1.38), CaF ₂ (1 .4), BaF ₂ (1.3), SiO ₂ (1.46), LaF ₃ (1.55), CeF ₃ (1.63), Al ₂ O ₃ (1.63) and other inorganic substances [above The numerical value in parentheses of each material is a refractive index], and organic substances such as acrylic resins, urethane resins, siloxane polymers, alkyd resins, melamine resins having a refractive index of about 1.4 to 1.6 are listed. . The material is appropriately selected or combined from these materials to form the second transparent dielectric layer 2 that satisfies the refractive index n2.

  The thickness of the second transparent dielectric layer 2 is not particularly limited, but is preferably 10 nm or more, more preferably 10 to 300 nm in order to form a continuous film and improve transparency and scratch resistance. Particularly preferably, the thickness is 20 to 120 nm. In addition, from the viewpoint of preventing cracks and improving transparency, the total thickness of the first and second transparent dielectric layers 1 and 2 is preferably 150 nm or less, and more preferably 100 nm or less.

The surface resistance value of the second transparent dielectric layer 2 is preferably 1.0 × 10 ⁶ Ω / □ or more, and more preferably 1.0 × 10 ⁸ Ω / □ or more. If the surface resistance value is 1.0 × 10 ⁶ Ω / □ or more, it is possible to prevent the transparent conductive layer from conducting through the second transparent dielectric layer 2, thereby improving input accuracy. There is no particular upper limit on the surface resistance of the first and second transparent dielectric layers 1 and 2. Generally, the upper limit of the surface resistance of the first and second transparent dielectric layers 1 and 2 is about 1.0 × 10 ¹³ Ω / □, which is a measurement limit, but 1.0 × 10 ¹³ Ω / □. May be exceeded.

  The material of the transparent conductive layer 3 is not particularly limited, and includes, for example, indium, tin, zinc, gallium, antimony, titanium, silicon, zirconium, magnesium, aluminum, gold, silver, copper, palladium, and tungsten. An oxide of at least one metal (or metalloid) selected from the group is used. If necessary, the oxide may further contain a metal element shown in the above group or an oxide thereof. For example, indium oxide containing tin oxide or tin oxide containing antimony is preferably used.

The thickness of the transparent conductive layer 3 is not particularly limited, but the thickness is preferably 10 nm or more in order to obtain a continuous film having good conductivity with a surface resistance of 1.0 × 10 ³ Ω / □ or less. From the viewpoint of improving transparency, the thickness is preferably 300 nm or less.

  The first transparent dielectric layer 1, the second transparent dielectric layer 2, and the transparent conductive layer 3 are usually formed sequentially in this order on the transparent film substrate F. Examples of the method for forming the first transparent dielectric layer 1 and the transparent conductive layer 3 include a vacuum deposition method, a sputtering method, an ion plating method, and the like. Although a method can be adopted, a sputtering method is common among these methods. Moreover, as a formation method of the 2nd transparent dielectric material layer 2, the coating method etc. are employable other than said method.

  On the other surface of the transparent film base F on which the first transparent dielectric layer 1, the second transparent dielectric layer 2, and the transparent conductive layer 3 are sequentially formed as described above, the transparent adhesive layer A is interposed. The transparent substrate T can be bonded. The transparent substrate T may be bonded by providing a transparent adhesive layer A on the transparent substrate T, and a transparent film substrate F may be bonded to the transparent substrate T, or conversely transparent on the transparent film substrate F. The adhesive layer A may be provided, and the transparent substrate T may be bonded thereto. In the latter method, since the transparent adhesive layer A can be continuously formed on the roll-shaped transparent film substrate F, it is more advantageous in terms of productivity.

The transparent pressure-sensitive adhesive layer A can be used without particular limitation as long as it has transparency. For example, an acrylic pressure-sensitive adhesive, a silicone pressure-sensitive adhesive, a rubber pressure-sensitive adhesive, and the like are used. This transparent pressure-sensitive adhesive layer A improves the scratch resistance of the transparent conductive layer 3 provided on one surface of the transparent film base F and the hitting characteristics for a touch panel by the cushion effect after the transparent substrate T is bonded. It has a function to make it. From the viewpoint of better performing this function, it is desirable to set the elastic modulus in the range of 1 to 100 N / cm ² and the thickness in the range of 1 μm or more, usually 5 to 100 μm.

  The transparent substrate T bonded via the transparent pressure-sensitive adhesive layer A gives good mechanical strength to the transparent film substrate F, and contributes particularly to the prevention of curling and the like, and is usually 6 to 300 μm. About a plastic film is used. When flexibility is not particularly required, a plastic plate of about 0.05 to 10 mm may be used. Examples of the plastic material include those similar to the transparent film substrate F described above.

  In addition, if necessary, an antiglare treatment layer or an antireflection treatment layer for the purpose of improving visibility may be provided on the outer surface of the transparent substrate T (the surface opposite to the transparent adhesive layer A), A hard coat layer may be provided for the purpose of protecting the outer surface. As the hard coat layer, for example, a cured film made of a curable resin such as a melamine resin, a urethane resin, an alkyd resin, an acrylic resin, a silicone resin, or an epoxy resin is preferably used.

  FIG. 3 shows an example of a touch panel using the transparent conductive film shown in FIG. That is, in a touch panel in which a pair of panel plates P1 and P2 each having a transparent conductive layer P1d and P2d formed in a stripe shape are arranged via a spacer S so that the transparent conductive layers P1d and P2d face each other. As the one panel plate P1, the transparent conductive film shown in FIG. 2 is used. As the spacer S, for example, a dot spacer made of an insulating material such as acrylic or urethane can be used. In addition, in the transparent conductive layers P1d and P2d in FIG. 3, the striped patterns are arranged so as to be orthogonal to each other.

  When this touch panel is pressed against the elastic force of the spacer S with the input pen M from the panel board P1 side, the transparent conductive layers P1d and P2d come into contact with each other, and the electric circuit is turned on. When the is released, it functions as a transparent switch structure that returns to the original OFF state. In that case, since the panel board P1 consists of said transparent conductive film, it is excellent in the abrasion resistance of a transparent conductive layer P1d, a hit point characteristic, etc., and can maintain the said function stably over a long period of time.

  In FIG. 3, the panel plate P1 may be the transparent conductive film shown in FIG. In addition, the panel plate P2 is obtained by providing the transparent conductive layer P2d on the transparent substrate T ′ made of a plastic film, a glass plate, or the like, but may be the transparent conductive film of the present invention.

  Examples of the present invention will be described below together with comparative examples. In addition, this invention is limited to a following example and is not interpreted.

<Refractive index of each layer>
The refractive index of each layer was measured by a specified measurement method shown on the refractometer, using an Abbe refractometer manufactured by Atago Co., Ltd., with measurement light incident on each measurement surface.

<Thickness of each layer>
The thickness of the transparent film substrate was measured with a Mitutoyo micro gauge thickness gauge. The thickness of the other layers was measured by observing a cross section with a transmission electron microscope H-7650 manufactured by Hitachi, Ltd.

<Surface resistance value of the first layer>
The surface resistance value (Ω / □) of the first layer was measured using a low chemical resistance measuring instrument manufactured by Mitsubishi Chemical Corporation.

<Example 1>
(Formation of first transparent dielectric layer (first layer))
On one surface of a transparent film substrate (refractive index nf = 1.66) made of a polyethylene terephthalate film having a thickness of 125 μm, 100 parts by weight of indium oxide in an atmosphere of a mixed gas of 95% argon gas and 5% oxygen gas, oxidized From a sintered body of a mixture of 3 parts by weight of tin and 45 parts by weight of cerium oxide, composite oxidation having 3 parts by weight of tin oxide and 45 parts by weight of cerium oxide with respect to 100 parts by weight of indium oxide by the reactive sputtering method under the following conditions A first transparent dielectric layer (surface resistance value: 2.0 × 10 ¹² Ω / □, thickness: 25 nm) made of a material (refractive index n1 = 2.20) was formed. Before introducing the mixed gas into the film formation atmosphere, the film formation atmosphere was brought to a state where the ultimate vacuum was 5.0 × 10 ⁻⁴ Pa or less, and the impurity gas was removed.

(Sputtering conditions)
Target size: 200mm x 500mm
Output: 3.0kW
Voltage value: 450V
Discharge time: 1 minute Vacuum degree: 0.5 Pa

(Formation of second transparent dielectric layer (second layer))
Next, SiO ₂ (refractive index n2 = 1.46) is vacuum deposited on the first transparent dielectric layer by an electron beam heating method at a vacuum degree of 1 × 10 ^{−2 to} 3 × 10 ⁻² Pa. A second transparent dielectric layer having a thickness of 50 nm was formed.

(Formation of transparent conductive layer (third layer))
Next, a mixture of 100 parts by weight of indium oxide and 10 parts by weight of tin oxide is baked on the second transparent dielectric layer in an atmosphere of 0.5 Pa using a mixed gas of 95% argon gas and 5% oxygen gas. A transparent conductive layer (thickness 20 nm) made of a composite oxide (refractive index n3 = 2.0) having 10 parts by weight of tin oxide with respect to 100 parts by weight of indium oxide is formed from the bonded body by a reactive sputtering method. The transparent conductive film of Example 1 was obtained.

<Example 2>
As a first layer, a first transparent dielectric layer (surface resistance) made of a composite oxide (refractive index n1 = 2.25) having 3 parts by weight of tin oxide and 55 parts by weight of cerium oxide with respect to 100 parts by weight of indium oxide. A transparent conductive film of Example 2 was obtained in the same manner as in Example 1 except that the value:> 1.0 × 10 ¹³ Ω / □, thickness: 25 nm) was formed.

<Example 3>
Example 1 except that a first transparent dielectric layer (surface resistance value:> 1.0 × 10 ¹³ Ω / □) having a thickness of 6 nm was formed as the first layer using the same constituent materials as in Example 1. 1 was used to obtain the transparent conductive film of Example 3.

<Comparative Example 1>
As a first layer, a layer (surface resistance value: 8.5) made of a complex oxide (refractive index n1 = 2.10) having 10 parts by weight of tin oxide and 25 parts by weight of cerium oxide with respect to 100 parts by weight of indium oxide. A transparent conductive film of Comparative Example 1 was obtained in the same manner as in Example 1 except that × 10 ⁹ Ω / □, thickness: 25 nm) was formed.

<Comparative example 2>
As a first layer, a layer (surface resistance value: 5.7) made of a composite oxide (refractive index n1 = 2.05) having 5 parts by weight of tin oxide and 10 parts by weight of cerium oxide with respect to 100 parts by weight of indium oxide. A transparent conductive film of Comparative Example 2 was obtained in the same manner as in Example 1 except that × 10 ⁷ Ω / □, thickness: 25 nm) was formed.

<Comparative Example 3>
As a first layer, a layer (surface resistance value: 1.1 × 10 ³ Ω / □) made of a composite oxide (refractive index n1 = 2.00) having 100 parts by weight of indium oxide and 10 parts by weight of tin oxide, thickness: A transparent conductive film of Comparative Example 3 was obtained in the same manner as in Example 1 except that 25 nm) was formed.

  The following evaluation was performed about the transparent conductive film obtained by the said Example and comparative example. The results are shown in Table 1. Since the second layer and the third layer have the same conditions, only the first layer is shown in Table 1 for the physical properties of each layer.

<Total light transmittance>
The total light transmittance was measured based on JIS K-7105 (Measurement Method B). In the measurement, the sample was arranged so that the transparent conductive layer was directed to the light source side.

<Hue b *>
The hue b * was measured using a spectrophotometer UV3150 manufactured by Shimadzu Corporation. The hue b * represents the degree of coloration of the transmitted light. When the value of the hue b * increases on the minus side, the transmitted light increases in blue, and when the value on the plus side increases, the yellow increases. The value of the hue b * is preferably in the range of −2 to 2 because coloring is suppressed.

As shown in Table 1, since the transparent conductive films of Examples 1 to 3 all have a high refractive index, the first layer has a good value for the total light transmittance. In Example 3, a thin first layer having a thickness of 6 nm was provided, but the surface resistance value was> 1.0 × 10 ¹³ Ω / □, indicating a high surface resistance value even when the thickness was small. On the other hand, the transparent conductive films of Comparative Examples 1 to 3 all showed good values similar to Examples 1 to 3 for the hue b *, but the refractive index of the first layer was lower than that of the Examples. Therefore, the total light transmittance was lowered. Further, the surface resistance value of the first layer was also lower than that of the example.

It is sectional drawing which shows an example of the transparent conductive film of this invention. It is sectional drawing which shows the other example of the transparent conductive film of this invention. It is sectional drawing which shows an example of the touchscreen of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 1st transparent dielectric layer 2 2nd transparent dielectric layer 3 Transparent conductive layer A Transparent adhesive layer F Transparent film base material P1, P2 Panel board P1d, P2d Transparent conductive layer S Spacer T, T 'Transparent base

Claims (9)

A transparent conductive film in which a first transparent dielectric layer, a second transparent dielectric layer, and a transparent conductive layer are formed in this order from one side of the transparent film substrate on one side of the transparent film substrate,
The first transparent dielectric layer includes indium oxide, 0 to 20 parts by weight of tin oxide with respect to 100 parts by weight of indium oxide, and more than 40 parts by weight with respect to 100 parts by weight of indium oxide. It consists of a complex oxide containing the following cerium oxide,
The refractive index of the first transparent dielectric layer n1, the refractive index of the second transparent dielectric layer n2, when the refractive index of the transparent conductive layer n3, meets the relationship of n2 <n3 ≦ n1,
The first transparent dielectric layer is a transparent conductive film having a thickness of 2 nm or more and less than 10 nm .   The transparent conductive film according to claim 1, wherein the first transparent dielectric layer has a thickness of 2 to 200 nm. Wherein the first transparent dielectric layer, a transparent conductive film according surface resistivity to claim 1 or 2 is 1.0 × ¹⁰ 10 Ω / □ or more. Wherein the first transparent dielectric layer, a vacuum vapor deposition method, a transparent conductive film according to any one of claims 1 to 3 which is formed by a sputtering method or an ion plating method. The transparent film substrate, the transparent conductive film according to any one of claims 1-4 thickness of 2 to 200 .mu.m. The transparent conductive film according to any one of claims 1 to 5 , wherein the total light transmittance is 91.0% or more. The transparent conductive film according to any one of claims 1 to 6 , further comprising a transparent substrate bonded to the other surface of the transparent film substrate via a transparent adhesive layer. A touch panel comprising a pair of panel plates having a transparent conductive layer disposed via a spacer so that the transparent conductive layers face each other,
The touch panel includes at least one of the panel plates, a transparent conductive film according to any one of claims 1-7. A method for producing a transparent conductive film according to any one of claims 1 to 7
A method for producing a transparent conductive film, comprising: forming a first transparent dielectric layer, a second transparent dielectric layer, and a transparent conductive layer in this order on one surface of the transparent film substrate from the transparent film substrate side .

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