JP5390901B2 - Thin film solar cell manufacturing apparatus and thin film solar cell manufacturing method - Google Patents

Description

  The present invention relates to a thin-film solar cell manufacturing apparatus including a thin-film forming unit that forms a thin film on a substrate, a laser oscillator that irradiates the thin film with laser light, and a thin film using such a thin-film solar cell manufacturing apparatus. The present invention relates to a method for manufacturing a solar cell.

  In a manufacturing process of a thin film solar cell having a substrate and a thin film formed on the substrate, a thin film processing apparatus using laser light is widely used (for example, see Patent Document 1). When a thin film is processed using laser light in this way (when laser processing is performed), it can be processed with high accuracy without damaging the substrate. Further, by using the beam scanning unit, a flexible pattern can be formed without using a chemical solution without performing a conventional pattern process (so-called PEP process), and the load on the environment can be kept small. For this reason, in the manufacturing process of a thin film solar cell, processing a thin film using a laser beam is used as a very effective production tool.

  Usually, a sputtering method is often used when forming a metal film or a transparent electrode film, while a plasma CVD method is often used when forming an amorphous silicon film or a polysilicon film. In these film forming methods, the entire substrate is placed in a sealed chamber to form a film, but when the formed thin film is laser processed, it is performed in the atmosphere. For this reason, it is necessary to perform the steps of vacuum drawing → thin film formation → opening to the atmosphere → laser processing → evacuation → thin film formation → opening to the air → laser processing.

Japanese Patent Application Laid-Open No. 08-242011

  However, with an increase in the size and cost of thin film solar cells, there is a problem of improving the throughput of the entire thin film solar cell manufacturing process. And, as described above, performing vacuum drawing → thin film formation → atmospheric release → laser processing → evacuation → thin film formation → atmospheric release → laser processing, etc. (repeating vacuuming and atmospheric release) This has become a major factor in reducing throughput.

  The present invention has been made in consideration of such points, and improves the throughput when manufacturing a thin-film solar cell, and thus can reduce the manufacturing cost of the thin-film solar cell. An object is to provide a device and a method for manufacturing a thin film solar cell.

An apparatus for manufacturing a thin-film solar cell according to the present invention includes:
A holding unit for holding the substrate;
A sealed chamber surrounding at least one side of the substrate;
A suction unit connected to the sealed chamber and creating a vacuum in the sealed chamber;
A thin film forming section for forming a thin film on one surface of the substrate in the sealed chamber in a vacuum state;
A laser oscillator for irradiating the thin film formed on one surface of the substrate located in the sealed chamber with laser light;
It has.

An apparatus for manufacturing a thin-film solar cell according to the present invention includes:
A fiber that is provided in the sealed chamber and guides laser light emitted from the laser oscillator;
A processing optical system connected to the fiber and irradiating a laser beam guided by the fiber;
An optical system moving unit that is connected to the processing optical system and moves the processing optical system may be further included.

In the thin-film solar cell manufacturing apparatus according to the present invention,
The sealed chamber may include a transmission window that surrounds the holding unit and the substrate held by the holding unit and is capable of transmitting laser light emitted from the laser oscillator.

An apparatus for manufacturing a thin-film solar cell according to the present invention includes:
A moving mechanism that is provided in the holding unit and moves the holding unit;
The moving mechanism may be disposed in the sealed chamber.

An apparatus for manufacturing a thin-film solar cell according to the present invention includes:
You may further provide the moving mechanism which is provided in the said sealed chamber and moves this sealed chamber.

In the thin-film solar cell manufacturing apparatus according to the present invention,
The sealed chamber also functions as the holding portion, holds one surface of the substrate and surrounds the one surface,
The laser oscillator may process the thin film by causing a laser beam having a wavelength that passes through the substrate to enter the thin film from the other surface side of the substrate.

The method for producing a thin-film solar cell according to the present invention comprises:
A step of holding the substrate by the holding unit;
Vacuuming the inside of the sealed chamber surrounding at least one surface of the substrate by a suction unit;
Forming a thin film on one surface of the substrate in the sealed chamber in a vacuum state by a thin film forming unit;
Irradiating a laser beam to the thin film formed on one surface of the substrate located in the sealed chamber by a laser oscillator;
It has.

  According to the present invention, it is possible to irradiate a thin film formed on one surface of a substrate located in a sealed chamber in a vacuum state with laser light. For this reason, the throughput at the time of manufacturing a thin film solar cell can be improved, and consequently the manufacturing cost of the thin film solar cell can be reduced.

The schematic sectional drawing which shows the structure of the manufacturing apparatus of the thin film solar cell by the 1st Embodiment of this invention. 1 is a schematic top plan view showing the configuration of a thin-film solar cell manufacturing apparatus according to a first embodiment of the present invention. The schematic upper plan view which shows the structure of the manufacturing apparatus of the thin film solar cell by the modification 1 of the 1st Embodiment of this invention. The schematic upper plan view which shows the structure of the manufacturing apparatus of the thin film solar cell by the modification 2-1 of the 1st Embodiment of this invention. The schematic upper plan view which shows the structure of the manufacturing apparatus of the thin film solar cell by the modification 2-2 of the 1st Embodiment of this invention. The schematic upper plan view which shows the structure of the manufacturing apparatus of the thin film solar cell by the modification 2-3 of the 1st Embodiment of this invention. The schematic sectional drawing which shows the structure of the manufacturing apparatus of the thin film solar cell by the 2nd Embodiment of this invention. The schematic sectional drawing which shows the structure of the manufacturing apparatus of the thin film solar cell by the 3rd Embodiment of this invention. The schematic sectional drawing which shows the structure of the manufacturing apparatus of the thin film solar cell by the 4th Embodiment of this invention.

First Embodiment Hereinafter, a first embodiment of a thin-film solar cell manufacturing apparatus and a thin-film solar cell manufacturing method according to the present invention will be described with reference to the drawings. Here, FIG. 1 thru | or FIG. 6 is a figure which shows the 1st Embodiment of this invention.

  As shown in FIG. 1, the thin-film solar cell manufacturing apparatus includes holding units 11, 21, 31, holding units 11, 21, 31, and holding units 11, 21, 31 that hold a substrate 91 made of a glass substrate. And a sealed chamber 50 that surrounds both surfaces (upper and lower surfaces) of the substrate 91 and can maintain a sealed state, and is connected to the sealed chamber 50 so that the inside of the sealed chamber 50 is in a vacuum state. And a suction pump (suction unit) 55.

  Further, as shown in FIG. 1, in the sealed chamber 50, below the substrate 91 held by the holding portions 11, 21, 31, the bottom surface of the substrate 91 is placed in the vacuumed sealed chamber 50. Are provided with thin film forming portions 13, 23, 33 for forming a thin film 92. The thin film forming portions 13, 23, 33 include an electrode film forming portion 13 for forming a transparent electrode film, a silicon film forming portion 23 for forming a silicon film on the transparent electrode film, and a metal film on the silicon film. And a metal film forming portion 33 to be formed. The thin film forming portions 13, 23, and 33 are configured to form the thin film 92 by a sputtering method, a plasma CVD method, or the like.

  As shown in FIG. 1, the sealed chamber 50 is provided between the lower chamber 51, the upper chamber 52 placed on the lower chamber 51, and between the lower chamber 51 and the upper chamber 52. The sealing member 54 which consists of these.

  The thin-film solar cell manufacturing apparatus is formed on the lower surface of the transparent electrode film and the first laser irradiation device that irradiates the transparent electrode film formed on the lower surface of the substrate 91 located in the sealed chamber 50 with the laser light L. A second laser irradiation device that irradiates the silicon film with the laser light L, and a third laser irradiation device that irradiates the metal film formed on the lower surface of the silicon film with the laser light L.

  As shown in FIG. 1, the first laser irradiation apparatus includes a first laser oscillator 40a that irradiates laser light L, and a laser beam that is connected to the first laser oscillator 40a and irradiated from the first laser oscillator 40a. An external fiber 44a for guiding L, a port 53a provided in the upper chamber 52 and connected to the external fiber 44a, and an internal fiber 44a ′ for guiding the laser light L connected to the port 53a and guided by the external fiber 44a. And a first processing optical system 41 a that is connected to the internal fiber 44 a ′ and irradiates the thin film 92 with the laser light L guided by the internal fiber 44 a ′. Similarly, the second laser irradiation apparatus includes a second laser oscillator 40b, an external fiber 44b, a port 53b, an internal fiber 44b ′, and a second processing optical system 41b, and a third laser irradiation apparatus. Includes a third laser oscillator 40c, an external fiber 44c, a port 53c, an internal fiber 44c ′, and a second processing optical system 41c.

As shown in FIG. 1, the first processing optical system 41a is connected to an optical system moving unit 45a that moves the first processing optical system 41a in the horizontal direction. Incidentally, the optical system moving unit 45a, as shown in FIG. 2, while being placed in a closed chamber 50, the X-direction guide 45a _x extending in the X direction (one direction of the horizontal direction), Y direction A Y-direction guide 45a _y extending in a direction (perpendicular to one direction in the horizontal direction) and an optical system drive unit (not shown) including a motor that moves the first processing optical system 41a are included. . Similarly, the second processing optical system 41b is connected to an optical system moving unit 45b that moves the second processing optical system 41b in the horizontal direction, and the optical system moving unit 45b is connected to the X-direction guide 45b _x . , a Y direction guide 45b _y, and an optical system driving unit (not shown), the third machining optical system 41c, the third machining optical system 41c of the optical system moving unit 45c which moves in the horizontal direction is connected, the optical system moving unit 45c is, has a X-direction guide 45c _x, the Y direction guide 45c _y, the optical system driving unit (not shown).

By the way, when the optical system moving units 45a, 45b, and 45c are operated in a vacuum environment, there is a problem of a temperature rise due to insufficient heat radiation of the optical system driving unit, and the X direction guides 45a _x , 45b _x , 45c _x and the Y direction. guide _{45a y,} 45b _y, dust problems due to the lubricating grease is likely to occur, which is painted to 45c _y. For this reason, in the present embodiment, a special motor that operates in a vacuum environment is used as the optical system driving unit, and a vacuum-dedicated grease that generates very little dust in a vacuum atmosphere is used as the lubricating grease. Further, when the film is formed by sputtering or plasma CVD, the substrate 91 is often heated to several hundred degrees Celsius, so that the processing optical systems 41a, 41b, 41c and the optical system moving units 45a, 45b, 45c are A material made of a material that can withstand the temperature rise due to radiant heat is used.

  Next, the operation of the present embodiment having such a configuration will be described.

  First, the substrate 91 is held by the holding unit 11 (see FIG. 2). At this time, the upper chamber 52 is positioned at an upper position separated from the lower chamber 51, and the substrate 91 is inserted between the upper chamber 52 and the lower chamber 51 (see FIG. 1).

  Next, the upper chamber 52 is positioned at a lower position in contact with the lower chamber 51 (see FIG. 1). Since the sealing member 54 is provided between the upper chamber 52 and the lower chamber 51, the space between the upper chamber 52 and the lower chamber 51 is sealed.

  Next, the gas in the sealed chamber 50 is sucked and discharged by the suction pump 55, and the sealed chamber 50 is evacuated (see FIG. 1).

  Next, a transparent electrode film is formed on the lower surface of the substrate 91 in the sealed chamber 50 in a vacuum state by the electrode film forming unit 13 (see FIG. 1).

  Next, the laser beam L is emitted from the first laser oscillator 40a (see FIG. 1). The laser light L is irradiated through the external fiber 44a, the port 53a, and the internal fiber 44a 'sequentially toward the transparent electrode film located in the sealed chamber 50 in a vacuum state from the first processing optical system 41a.

  At this time, the first processing optical system 41a is moved in the horizontal direction by the optical system moving unit 45a. For this reason, the transparent electrode film is partially removed, and a processed line having a predetermined pattern is formed on the transparent electrode film. The laser light L emitted from the first processing optical system 41 a has a wavelength that transmits the substrate 91.

  Next, the substrate moving portion (not shown) moves the substrate 90 to be processed, on which the transparent electrode film is formed on the substrate 91, to the holding portion 21 located above the silicon film forming portion 23. Is held (see arrow (1) in FIG. 2). At this time, the substrate to be processed 90 is held in a state where the transparent electrode film (thin film 92) is located below and the substrate 91 is located above (see FIG. 1). By the way, the processed substrate 90 of the present application means a substrate having a substrate 91 and a thin film (transparent electrode film, silicon film, metal film, etc.) 92 provided on the substrate 91.

  Next, a silicon film is formed on the lower surface of the transparent electrode film in the sealed chamber 50 in a vacuum state by the silicon film forming unit 23 (see FIG. 1).

  Next, the laser beam L is emitted from the second laser oscillator 40b (see FIG. 1). This laser light L is irradiated through the external fiber 44b, the port 53b, and the internal fiber 44b 'sequentially toward the silicon film located in the sealed chamber 50 that is in a vacuum state from the second processing optical system 41b.

  At this time, the second processing optical system 41b is moved in the horizontal direction by the optical system moving unit 45b. For this reason, the silicon film is partially removed, and a processed line having a predetermined pattern is formed on the silicon film. The laser beam L emitted from the second processing optical system 41b has a wavelength that passes through the substrate 91 and the transparent electrode film.

  Next, the substrate moving unit (not shown) moves the substrate 90 on which the silicon film and the transparent electrode film are formed on the substrate 91 to the holding unit 31 located above the metal film forming unit 33 and holds the holding unit. It is held by the unit 31 (see arrow (2) in FIG. 2). At this time, the substrate 90 to be processed is held in a state where the silicon film, the transparent electrode film, and the substrate 91 are positioned in order from the bottom.

  Next, a metal film is formed on the lower surface of the silicon film in the sealed chamber 50 in a vacuum state by the metal film forming unit 33 (see FIG. 1).

  Next, the laser beam L is emitted from the third laser oscillator 40c (see FIG. 1). The laser light L is irradiated from the third processing optical system 41c toward the metal film located in the sealed chamber 50 in a vacuum state through the external fiber 44c, the port 53c, and the internal fiber 44c 'in this order.

  At this time, the third processing optical system 41c is moved in the horizontal direction by the optical system moving unit 45c. For this reason, the metal film is partially removed together with the silicon film, and a processing line having a predetermined pattern is formed on the metal film. The laser beam L emitted from the third processing optical system 41c has a wavelength that passes through the substrate 91 and the transparent electrode film.

  As described above, when the transparent electrode film, the silicon film, and the metal film having a predetermined pattern are formed, the substrate 90 to be processed is taken out from the sealed chamber 50.

  As described above, in the present embodiment, the transparent electrode film is formed, the transparent electrode film is processed by the laser light L, the silicon film is formed, and the silicon film is irradiated by the laser light L in the sealed chamber 50 in a vacuum state. Processing, formation of the metal film, and processing of the metal film with the laser beam L are continuously performed. For this reason, when processing a transparent electrode film, a silicon film, and a metal film with the laser beam L, it is not necessary to break a vacuum state.

  As a result, according to the prior art, it is necessary to go through the steps of vacuum drawing → thin film formation → atmospheric release → laser processing → evacuation → thin film formation → atmospheric release → laser processing → thin film formation → atmospheric release → laser processing. , Vacuum drawing → thin film formation → laser processing → thin film formation → laser processing → thin film formation → laser processing. Therefore, according to this Embodiment, the throughput at the time of manufacturing a thin film solar cell can be improved, and the manufacturing cost of a thin film solar cell can be reduced by extension.

  In the present embodiment, since the fibers 44a, 44b, 44c, 44a ', 44b', and 44c 'are used, the following effects can be obtained. That is, since the laser beam L does not propagate in space, it can be made difficult to be affected by the cleanliness of the propagation space such as dust and dust. Further, adjustment work for aligning the optical axis of the optical system such as a reflection mirror and a condenser lens is not necessary. Furthermore, the laser beam L can be made less susceptible to environmental disturbances such as temperature changes and vibrations.

  In addition, the preparation substrate stock part 70 which stocks the board | substrate 91 in the sealed chamber 50, and the completion | finish board | substrate stock part which stocks the processed substrate 90 (processed substrate 90 in which the processing line was formed in the metal film) which completed the process. 71 may be provided.

  By providing such a prepared substrate stock unit 70, the next substrate 91 is mounted on the holding unit 11 without breaking the vacuum when the substrate 91 on which the transparent electrode film is formed is removed from the holding unit 11. Therefore, the throughput can be further improved. Further, by providing the end substrate stock portion 71, the processed substrate 90 that has been processed can be stocked in the end substrate stock portion 71 for the time being, and a new substrate 91 or another target substrate can be continuously added without breaking the vacuum. Processing on the processed substrate 90 can be continued, and the throughput can be further improved.

  By the way, in the present embodiment, the thin film forming part includes an electrode film forming part 13 for forming a transparent electrode film, a silicon film forming part 23 for forming a silicon film on the transparent electrode film, and a metal film for the silicon film. Although it demonstrated using the aspect which has the metal film formation part 33 formed in piles, it is not restricted to this. For example, the thin film forming unit may include only the silicon film forming unit 23 and the metal film forming unit 33. In this case, in the thin film solar cell manufacturing apparatus, the substrate 91 and the substrate 91 are provided from the beginning. The processing is started using the substrate 90 to be processed having the transparent electrode film provided on the substrate.

Modification 1
In the above, as a mode in which the processing optical systems 41a, 41b, and 41c are moved relative to the substrate 90, the processing optical systems 41a, 41b, and 41c are horizontally moved by the optical system moving units 45a, 45b, and 45c. However, the present invention is not limited to this. For example, as shown in FIG. 3, a Y-direction guide 45 y extending in the Y direction extends over the three holding portions 11, 21, 31, and the holding portion 11 is placed below the holding portion 11 in the X direction. An X stage 46 a _x for moving in the direction is provided, an X stage 46 b _x for moving the holding unit 21 in the X direction is provided below the holding unit 21, and the holding unit 31 is placed below the holding unit 31 by X An X stage 46c _x that shifts in the direction may be provided.

Modification 2
Moreover, in the above, the thin film 92 is formed with respect to the to-be-processed substrate 90 hold | maintained by the holding | maintenance part 11, 21, 31, and the thin film 92 formed by irradiating the laser beam L is processed. However, it is not limited to this.

Modification 2-1
For example, as shown in FIG. 4, the place where the thin film 92 is formed by the thin film forming portions 13, 23, and 33 may be different from the place where the thin film 92 is processed by the laser light L. More specifically, A thin film solar cell may be manufactured through the following steps.

  That is, in the sealed chamber 50 in a vacuum state, the substrate 91 is first held by the holding unit 11, and a transparent electrode film is formed on the lower surface of the substrate 91 by the electrode film forming unit 13. Next, the substrate 90 to be processed is moved to and held by the holding unit 16 (see arrow (1) in FIG. 4), and the transparent electrode film is processed by the laser light L from the first laser oscillator 40a. Next, the substrate to be processed 90 is moved to and held by the holding unit 21 (see arrow (2) in FIG. 4), and a silicon film is formed on the lower surface of the transparent electrode film by the silicon film forming unit 23. Next, the substrate to be processed 90 is moved to and held by the holding unit 26 (see arrow (3) in FIG. 4), and the silicon film is processed by the laser light L from the second laser oscillator 40b. Next, the substrate to be processed 90 is moved to and held by the holding unit 31 (see arrow (4) in FIG. 4), and the metal film forming unit 33 forms a metal film on the lower surface of the silicon film. Next, the substrate 90 to be processed is moved to and held by the holding unit 36 (see arrow (5) in FIG. 4), and the metal film is processed by the laser light L from the third laser oscillator 40c.

Modification 2-2
For example, as shown in FIG. 5, the electrode film forming unit 13, the silicon film forming unit 23, and the metal film forming unit 33 sequentially move below the substrate 91 or the substrate 90 to be processed held by the holding unit 11. The thin film 92 may be formed by each of the electrode film forming unit 13, the silicon film forming unit 23, and the metal film forming unit 33. More specifically, a thin film solar cell may be manufactured through the following steps.

  In the sealed chamber 50 in a vacuum state, first, the substrate 91 is held by the holding unit 11, and a transparent electrode film is formed by the electrode film forming unit 13. Next, the transparent electrode film is processed by irradiating the transparent electrode film with laser light L from a laser oscillator. Next, the electrode film forming portion 13 is retracted from below the workpiece substrate 90 (see arrow (1) in FIG. 5), and the silicon film forming portion 23 is positioned below the workpiece substrate 90 (arrow in FIG. 5). (See (2)). Thereafter, a silicon film is formed on the lower surface of the transparent electrode film by the silicon film forming portion 23. Next, the silicon film is processed by irradiating the silicon film with laser light L from a laser oscillator. Next, the silicon film forming portion 23 is retracted from below the substrate 90 to be processed (see arrow (3) in FIG. 5), and the metal film forming portion 33 is positioned below the substrate to be processed 90 (FIG. 5). Arrow (4), see). Thereafter, a metal film is formed on the lower surface of the silicon film by the metal film forming portion 33. Next, the metal film is processed by irradiating the metal film with laser light L from a laser oscillator. Thereafter, the metal film forming portion 33 retreats from below the workpiece substrate 90 (see the arrow (5) in FIG. 5), and the electrode film forming portion 13 is positioned at the initial position (see the arrow (6) in FIG. 5). ).

Modification 2-3
Further, for example, as shown in FIG. 6, the sealed chamber 50 includes a substrate loading / unloading unit 80 into which the substrate 91 is loaded and the workpiece substrate 90 is unloaded, and the electrode film forming unit 13 is included in the sealed chamber 50. Alternatively, a mode in which the silicon film forming unit 23, the metal film forming unit 33, and the processing optical system 41 are provided may be used. More specifically, a thin film solar cell may be manufactured through the following steps.

  First, the substrate 91 is loaded from the substrate loading / unloading section 80 into the sealed chamber 50 (see arrow (1a) in FIG. 6). Next, the substrate 91 is moved to and held by the holding unit 11 (see the arrow (2a) in FIG. 6), and a transparent electrode film is formed on the lower surface of the substrate 91 by the electrode film forming unit 13. Next, the substrate to be processed 90 on which the transparent electrode film is formed on the substrate 91 is moved to and held by the holding unit 16 (see arrows (2b) and (5a) in FIG. 6). Processed by the laser beam L. Next, the substrate to be processed 90 is moved to and held by the holding unit 21 (see arrows (5b) and (3a) in FIG. 6), and a silicon film is formed on the lower surface of the transparent electrode film by the silicon film forming unit 23. . Next, the substrate 90 to be processed is again moved to and held by the holding unit 16 (see arrows (3b) and (5a) in FIG. 6), and the silicon film is processed by the laser light L from the laser oscillator. Next, the substrate to be processed 90 is moved to and held by the holding unit 31 (see arrows (5b) and (4a) in FIG. 6), and a metal film is formed on the lower surface of the silicon film by the metal film forming unit 33. Next, the substrate 90 to be processed is again moved to and held by the holding unit 16 (see arrows (4b) and (5a) in FIG. 6), and the metal film is processed by the laser light L from the laser oscillator. Finally, the substrate 90 to be processed is moved to the substrate loading / unloading section 80 (see arrows (5b) and (1b) in FIG. 6) and unloaded from the substrate loading / unloading section 80.

  By the way, in any of the above-described modifications, at the stage of manufacturing the substrate 90 to be processed, vacuum drawing → thin film formation → atmospheric release → laser processing → evacuation → thin film formation → atmospheric release → laser processing → thin film formation → atmospheric release → Instead of the process of laser processing (conventional process), a process of vacuum drawing → thin film formation → laser processing → thin film formation → laser processing → thin film formation → laser processing can be used. For this reason, the throughput at the time of manufacturing a thin film solar cell can be improved, and consequently the manufacturing cost of the thin film solar cell can be reduced.

  Also in the above-described modified examples 1, 2-1, and 2-3, a closed substrate stock section for stocking the substrate 91 and an end substrate stock section for stocking the substrate to be processed 90 may be provided in the sealed chamber 50. By providing such a prepared substrate stock portion, the next substrate 91 is placed on the holding portion 11 without breaking the vacuum when the substrate 91 on which the transparent electrode film is formed is removed from the holding portion 11. In addition, by providing the end substrate stock portion, it is possible to continuously process the new substrate 91 or another substrate 90 without breaking the vacuum. For this reason, the throughput can be further improved.

  Note that in this embodiment mode, the mode in which the thin film 92 is formed on the lower surface of the substrate 91 has been described. However, the present invention is not limited to this, and the mode in which the thin film 92 is formed on the upper surface of the substrate 91 is used. Alternatively, the substrate 90 to be processed may be held in the state where the substrate 91, the transparent electrode film, the silicon film, and the metal film are positioned in order from the bottom.

Second Embodiment Next, a second embodiment of the present invention will be described with reference to FIG. In the first embodiment shown in FIGS. 1 to 6, fibers 44a, 44b, and 44c for guiding the laser light L emitted from the laser oscillators 40a, 40b, and 40c are provided in the sealed chamber 50, and the fiber 44a. , 44b, 44c are connected to processing optical systems 41a, 41b, 41c for irradiating the laser light L guided by the fibers 44a, 44b, 44c, and the processing optical systems 41a, 41b, 41c are connected to the processing optical systems 41a, 41b. , 41c is used. The optical system moving parts 45a, 45b, 45c are connected.

  On the other hand, in the second embodiment shown in FIG. 7, a transmission window 59 through which the laser light L emitted from the laser oscillators 40a, 40b, and 40c can be transmitted is provided in the upper chamber 52 of the sealed chamber 50. It is what. The holding unit 11 is disposed in the sealed chamber 50, and moves the holding unit 11 in the horizontal direction to move the position of the laser light L relative to the substrate 90 to be processed (moving mechanism). ) 46a, and similarly, the holding unit 21 is provided with a substrate moving mechanism 46b, and the holding unit 31 is provided with a substrate moving mechanism 46c.

  In the optical path between the first laser oscillator 40a and the transmission window 59, a reflection mirror 48a that reflects the laser light L and a condensing lens that condenses the laser light L reflected by the reflection mirror 48a onto the thin film 92. Similarly, a reflection mirror 48b and a condensing lens 49b are provided in the optical path between the second laser oscillator 40b and the transmission window 59, and between the third laser oscillator 40c and the transmission window 59. A reflection mirror 48c and a condensing lens 49c are provided in the optical path.

  Other configurations are substantially the same as those of the first embodiment shown in FIGS. Further, in the second embodiment shown in FIG. 7, the same parts as those in the first embodiment shown in FIGS.

  Also according to this embodiment, at the stage of manufacturing the substrate 90 to be processed, vacuum drawing → thin film formation → atmospheric release → laser processing → evacuation → thin film formation → atmospheric release → laser processing → thin film formation → atmospheric release → laser processing, Instead of the above process (conventional process), a process of vacuum drawing → thin film formation → laser processing → thin film formation → laser processing → thin film formation → laser processing can be used. For this reason, the throughput at the time of manufacturing a thin film solar cell can be improved, and consequently the manufacturing cost of the thin film solar cell can be reduced.

  Also in the present embodiment, a preparation substrate stock portion for stocking the substrate 91 and an end substrate stock portion for stocking the substrate 90 to be processed may be provided in the sealed chamber 50. By providing such a prepared substrate stock portion, the next substrate 91 is placed on the holding portion 11 without breaking the vacuum when the substrate 91 on which the transparent electrode film is formed is removed from the holding portion 11. In addition, by providing the end substrate stock portion, it is possible to continuously process the new substrate 91 or another substrate 90 without breaking the vacuum. For this reason, the throughput can be further improved.

Third Embodiment Next, a third embodiment of the present invention will be described with reference to FIG. In the second embodiment shown in FIG. 7, substrate moving mechanisms 46a, 46b, 46c for moving the holding units 11, 21, 31 are provided in the holding units 11, 21, 31, and the substrate moving mechanism 46a. , 46b, 46c are arranged in the sealed chamber 50. On the other hand, in the third embodiment shown in FIG. 8, substrate moving mechanisms 46 a, 46 b, 46 c that move the sealed chamber 50 in the horizontal direction are provided on the lower surface of the sealed chamber 50. The position of the laser beam L relative to the substrate 90 is moved by moving the sealed chamber 50 in the horizontal direction. Other configurations are substantially the same as those of the second embodiment shown in FIG.

  In the third embodiment shown in FIG. 8, the same parts as those of the second embodiment shown in FIG.

  Also according to the present embodiment, in the stage of manufacturing the substrate 90 to be processed, vacuum drawing → thin film formation → atmospheric release → laser processing → evacuation → thin film formation → atmospheric release → laser processing → thin film formation → atmospheric release → laser. Instead of processing (conventional process), a process of vacuum drawing → thin film formation → laser processing → thin film formation → laser processing → thin film formation → laser processing can be used. For this reason, the throughput at the time of manufacturing a thin film solar cell can be improved, and consequently the manufacturing cost of the thin film solar cell can be reduced.

  Also in the present embodiment, a preparation substrate stock portion for stocking the substrate 91 and an end substrate stock portion for stocking the substrate 90 to be processed may be provided in the sealed chamber 50. By providing such a prepared substrate stock portion, the next substrate 91 is placed on the holding portion 11 without breaking the vacuum when the substrate 91 on which the transparent electrode film is formed is removed from the holding portion 11. In addition, by providing the end substrate stock portion, it is possible to continuously process the new substrate 91 or another substrate 90 without breaking the vacuum. For this reason, the throughput can be further improved.

Fourth Embodiment Next, a fourth embodiment of the present invention will be described with reference to FIG. In the third embodiment shown in FIG. 8, the sealed chamber 50 surrounds the holding units 11, 21, 31 and the substrate 91 held by the holding units 11, 21, 31, and from the laser oscillators 40 a, 40 b, 40 c. It has a transmission window 59 through which the irradiated laser beam L can be transmitted. On the other hand, in the fourth embodiment shown in FIG. 9, the lower chamber (sealed chamber) 51 abuts on the lower surface of the substrate 91 and surrounds the central portion of the lower surface. A sealing member 54 ′ made of an O-ring or the like is disposed at a position where the lower chamber 51 contacts the lower surface of the substrate 91, and the lower chamber 51 and the lower surface of the substrate 91 are in close contact with each other by the sealing member 54 ′. Will be. Other configurations are substantially the same as those of the third embodiment shown in FIG. In the present embodiment, the lower chamber 51 also functions as a holding unit.

  In the fourth embodiment shown in FIG. 9, the same parts as those of the third embodiment shown in FIG.

  Also according to the present embodiment, in the stage of manufacturing the substrate 90 to be processed, vacuum drawing → thin film formation → atmospheric release → laser processing → evacuation → thin film formation → atmospheric release → laser processing → thin film formation → atmospheric release → laser. Instead of processing (conventional process), a process of vacuum drawing → thin film formation → laser processing → thin film formation → laser processing → thin film formation → laser processing can be used. For this reason, the throughput at the time of manufacturing a thin film solar cell can be improved, and consequently the manufacturing cost of the thin film solar cell can be reduced.

  Also. According to the present embodiment, the size of the sealed chamber can be reduced, and the thin-film solar cell manufacturing apparatus can be reduced in size.

  In the present embodiment, as in the first embodiment, the laser oscillators 40a, 40b, and 40c are provided with a fiber, and a processing optical system that irradiates the laser light guided by the fiber is connected to the fiber. Alternatively, an aspect in which an optical system moving unit that moves the processing optical system to the processing optical system may be used.

  In the present embodiment, as shown in Modification 2-2 of the first embodiment, the electrode film forming unit 13, the silicon film forming unit 23, and the metal film forming unit 33 are sequentially formed in the lower chamber ( A mode in which the thin film 92 is formed by each of the electrode film forming unit 13, the silicon film forming unit 23, and the metal film forming unit 33 is moved below the substrate 91 or the substrate to be processed 90 held by the holding unit 51). It is preferable to use it because the device configuration can be simplified.

11 Holding part 13 Electrode film forming part (thin film forming part)
16 Holding part 21 Holding part 23 Silicon film forming part (thin film forming part)
26 holding part 31 holding part 33 metal film forming part (thin film forming part)
36 Holding portions 40a, 40b, 40c Laser oscillators 41a, 41b, 41c Processing optical systems 44a, 44b, 44c Fibers 45a, 45b, 45c Optical system moving portions 46a, 46b, 46c Substrate moving mechanism (moving mechanism)
50 Sealing chamber 51 Lower chamber 52 Upper chamber 54, 54 'Sealing member 55 Suction pump (suction part)
59 Transmission window 90 Substrate 91 Substrate 92 Thin film L Laser beam

Claims (1)

A holding unit for holding the substrate;
A sealed chamber surrounding at least one side of the substrate;
A suction unit connected to the sealed chamber and creating a vacuum in the sealed chamber;
A thin film forming section for forming a thin film on one surface of the substrate in the sealed chamber in a vacuum state;
A laser oscillator for irradiating the thin film formed on one surface of the substrate located in the sealed chamber with laser light ;
A fiber that is provided in the sealed chamber and guides laser light emitted from the laser oscillator;
A processing optical system that is provided in the sealed chamber and connected to the fiber, and irradiates a laser beam guided by the fiber;
An optical system moving unit provided in the sealed chamber and coupled to the processing optical system to move the processing optical system;
With
The fiber, the processing optical system, and the optical system moving unit are arranged in the sealed chamber in which the thin film forming unit is provided .

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