JP5340309B2 - 電子源に電力を供給する装置および方法、ならびにイオン照射が誘導される二次放出電子源 - Google Patents
電子源に電力を供給する装置および方法、ならびにイオン照射が誘導される二次放出電子源 Download PDFInfo
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- JP5340309B2 JP5340309B2 JP2010541819A JP2010541819A JP5340309B2 JP 5340309 B2 JP5340309 B2 JP 5340309B2 JP 2010541819 A JP2010541819 A JP 2010541819A JP 2010541819 A JP2010541819 A JP 2010541819A JP 5340309 B2 JP5340309 B2 JP 5340309B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/02—Electron guns
- H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/20—Ion sources; Ion guns using particle beam bombardment, e.g. ionisers
- H01J27/205—Ion sources; Ion guns using particle beam bombardment, e.g. ionisers with electrons, e.g. electron impact ionisation, electron attachment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J33/00—Discharge tubes with provision for emergence of electrons or ions from the vessel; Lenard tubes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/262—Non-scanning techniques
- H01J2237/2623—Field-emission microscopes
- H01J2237/2626—Pulsed source
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Electron Sources, Ion Sources (AREA)
- Electron Tubes For Measurement (AREA)
Description
Claims (12)
- 制御入力および2つの高電圧出力を含み、低圧チャンバにおいてイオン照射が誘導される二次放出電子源用の電気供給装置(14)であって、一方の高電圧出力における複数の正のパルス発生用手段と、少なくとも複数の前記正のパルス後の他方の高電圧出力における負のパルス発生用手段と、を備えることを特徴とする、装置。
- 前記複数の正のパルス発生用手段の作動終了と前記負のパルス発生用手段の作動開始との間の遅延発生用手段を備える、請求項1に記載の装置。
- 複数の正のパルス発生用手段は、最初のパルスが後続のパルスよりも高い電圧となるように構成されることを特徴とする、請求項1または2に記載の装置。
- 低圧チャンバ(3)においてイオン照射が誘導される二次放出電子源(1)への電気供給方法であって、一方の高電圧出力で複数の正のパルス(18)を発生させるとともに、少なくとも複数の正のパルス後に他方の高電圧出力で負のパルス(19)を発生させることを特徴とする、方法。
- 0以外の遅延が、前記正のパルスの終了を前記負のパルスの開始と分けることを特徴とする、請求項4に記載の方法。
- 最初の正のパルスのピーク電圧が、後続の正のパルスのピーク電圧よりも大きいことを特徴とする、請求項4または5に記載の方法。
- 前記後続の正のパルスの前記ピーク電圧は、実質的に等しいことを特徴とする、請求項6に記載の方法。
- 前記後続の正のパルスの持続時間は、実質的に一定であることを特徴とする、請求項6または7に記載の方法。
- 少なくとも1つのパルスの電圧をエイジングの過程で増加させることを特徴とする、請求項4から8のいずれか1項に記載の方法。
- 低圧チャンバ(3)と、加速チャンバ(2)と、前記加速チャンバ内に位置する負極(10)と、前記低圧チャンバ内に位置する正極(12)と、請求項1〜3のいずれか1項に記載の装置(14)と、を備え、前記一方の高電圧出力が前記正極(12)と接続されるとともに前記他方の高電圧出力が前記正極(10)と接続される、電子源(1)。
- 複数の正のパルス発生用手段および負のパルス発生用手段についてのコマンドモジュール(17)を備えることを特徴とする、請求項10に記載の電子源。
- 前記正極(12)は、両端で電力が供給されるワイヤを備え、前記低圧チャンバが前記ワイヤ方向へ伸びることを特徴とする、請求項10または11に記載の電子源。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP08290026.7 | 2008-01-11 | ||
EP08290026A EP2079092B1 (fr) | 2008-01-11 | 2008-01-11 | Dispositif et procédé d'alimentation électrique d'une source d'électrons et source d'électrons à émission secondaire sous bombardement ionique |
PCT/FR2009/000017 WO2009112668A1 (fr) | 2008-01-11 | 2009-01-08 | Dispositif et procédé d'alimentation électrique d'une source d'électrons et source d'électrons à émission secondaire sous bombardement ionique |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011509512A JP2011509512A (ja) | 2011-03-24 |
JP5340309B2 true JP5340309B2 (ja) | 2013-11-13 |
Family
ID=39494285
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010541819A Active JP5340309B2 (ja) | 2008-01-11 | 2009-01-08 | 電子源に電力を供給する装置および方法、ならびにイオン照射が誘導される二次放出電子源 |
Country Status (9)
Country | Link |
---|---|
US (1) | US8664863B2 (ja) |
EP (1) | EP2079092B1 (ja) |
JP (1) | JP5340309B2 (ja) |
KR (1) | KR20100134558A (ja) |
CN (1) | CN101952927B (ja) |
AT (1) | ATE477585T1 (ja) |
DE (1) | DE602008002138D1 (ja) |
TW (1) | TWI470919B (ja) |
WO (1) | WO2009112668A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10338131B2 (en) * | 2015-11-24 | 2019-07-02 | Texas Instruments Incorporated | System and method for high voltage stress testing plurality of parallel units |
EP3196918B1 (en) | 2016-01-19 | 2019-02-27 | Laser Systems and Solutions of Europe | Pulsed x-ray source comprising a low pressure wire ion plasma discharge source |
CN108173450B (zh) * | 2018-02-06 | 2024-03-12 | 中国工程物理研究院流体物理研究所 | 一种集高压短脉冲预电离一体化高功率双极性脉冲形成电路 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2204882B1 (ja) | 1972-10-30 | 1976-10-29 | Onera (Off Nat Aerospatiale) | |
US3970892A (en) | 1975-05-19 | 1976-07-20 | Hughes Aircraft Company | Ion plasma electron gun |
FR2591035B1 (fr) | 1985-11-29 | 1988-02-26 | Onera (Off Nat Aerospatiale) | Canon a electrons operant par emission secondaire sous bombardement ionique |
US4786844A (en) * | 1987-03-30 | 1988-11-22 | Rpc Industries | Wire ion plasma gun |
DE58901620D1 (de) * | 1988-04-08 | 1992-07-16 | Siemens Ag | Plasma-roentgenroehre, insbesondere zur roentgen-vorionisierung von gaslasern, verfahren zur erzeugung von roentgenstrahlung mit einer solchen roentgenroehre und verwendung letzterer. |
US5055748A (en) * | 1990-05-30 | 1991-10-08 | Integrated Applied Physics Inc. | Trigger for pseudospark thyratron switch |
US5057740A (en) * | 1990-05-31 | 1991-10-15 | Integrated Applied Physics, Inc. | Photoemissive trigger for backlighted thyratron switches |
JPH05211052A (ja) * | 1992-01-30 | 1993-08-20 | Toshiba Corp | パルス電子銃 |
JPH08236053A (ja) * | 1995-02-28 | 1996-09-13 | Toshiba Corp | 電子銃 |
DE19621874C2 (de) * | 1996-05-31 | 2000-10-12 | Karlsruhe Forschzent | Quelle zur Erzeugung von großflächigen, gepulsten Ionen- und Elektronenstrahlen |
JP3135864B2 (ja) * | 1997-05-27 | 2001-02-19 | 住友重機械工業株式会社 | イオン・プラズマ型電子銃とその制御方法 |
US5910886A (en) * | 1997-11-07 | 1999-06-08 | Sierra Applied Sciences, Inc. | Phase-shift power supply |
US6182604B1 (en) * | 1999-10-27 | 2001-02-06 | Varian Semiconductor Equipment Associates, Inc. | Hollow cathode for plasma doping system |
US7663319B2 (en) * | 2004-02-22 | 2010-02-16 | Zond, Inc. | Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities |
US20060121704A1 (en) * | 2004-12-07 | 2006-06-08 | Varian Semiconductor Equipment Associates, Inc. | Plasma ion implantation system with axial electrostatic confinement |
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2008
- 2008-01-11 EP EP08290026A patent/EP2079092B1/fr active Active
- 2008-01-11 DE DE602008002138T patent/DE602008002138D1/de active Active
- 2008-01-11 AT AT08290026T patent/ATE477585T1/de not_active IP Right Cessation
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2009
- 2009-01-08 US US12/812,245 patent/US8664863B2/en active Active
- 2009-01-08 CN CN2009801019286A patent/CN101952927B/zh active Active
- 2009-01-08 WO PCT/FR2009/000017 patent/WO2009112668A1/fr active Application Filing
- 2009-01-08 KR KR1020107017749A patent/KR20100134558A/ko not_active Application Discontinuation
- 2009-01-08 JP JP2010541819A patent/JP5340309B2/ja active Active
- 2009-01-09 TW TW98100594A patent/TWI470919B/zh active
Also Published As
Publication number | Publication date |
---|---|
EP2079092B1 (fr) | 2010-08-11 |
TW200939611A (en) | 2009-09-16 |
TWI470919B (zh) | 2015-01-21 |
WO2009112668A1 (fr) | 2009-09-17 |
CN101952927B (zh) | 2012-10-17 |
DE602008002138D1 (de) | 2010-09-23 |
JP2011509512A (ja) | 2011-03-24 |
US8664863B2 (en) | 2014-03-04 |
ATE477585T1 (de) | 2010-08-15 |
CN101952927A (zh) | 2011-01-19 |
KR20100134558A (ko) | 2010-12-23 |
US20110057565A1 (en) | 2011-03-10 |
EP2079092A1 (fr) | 2009-07-15 |
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