JP5285940B2 - Negative resist composition and resist pattern forming method using the same - Google Patents

Description

  The present invention relates to a negative resist composition used in the manufacture of semiconductor elements such as ICs, circuit boards such as liquid crystal display devices and thermal heads, and also to other photofabrication lithography processes, and a resist pattern forming method using the same. It is about. In particular, the present invention relates to a negative resist composition suitable for exposure with a projection exposure apparatus using a far ultraviolet ray having a wavelength of 200 nm or less as a light source, and a resist pattern forming method using the same.

In recent years, semiconductor devices have been increasingly densely and highly integrated. Therefore, further fine pattern processing has been required. In order to satisfy this need, the wavelength used by exposure apparatuses used in photolithography has become shorter, and now it is considered to use excimer laser light (XeCl, KrF, ArF, etc.) having a short wavelength among far ultraviolet rays. It is becoming.
The resist composition, on the other hand, uses a resin that is insoluble or insoluble in the developer and forms a pattern by solubilizing the exposed area in the developer by exposure to radiation, and is soluble in the developer. There is a “negative type” in which a pattern is formed by making an exposed portion hardly soluble or insoluble in a developer by exposure to radiation. However, positive resist compositions are currently in practical use.
There is a demand for forming various patterns such as lines, trenches, and holes in semiconductor elements and the like. As the pattern becomes finer, higher resolution is required. To achieve this, it is desirable to use a mask that provides high optical contrast. However, in order to use a mask that provides this high optical contrast, a positive resist composition is advantageous when forming a line pattern, and a negative resist composition is advantageous when forming a trench pattern. Accordingly, development of negative resist compositions as well as positive ones is desired in order to meet various pattern formation requirements.

In the case of using 248 nm light of a KrF excimer laser as an exposure source, a negative resist composition using a polymer in which an acetal group or a ketal group is introduced as a protective group to a hydroxystyrene-based polymer with little light absorption has been proposed. Yes. These are suitable for use in a KrF excimer laser, but when used in an ArF excimer laser, there is a problem that the sensitivity decreases due to strong absorption at 193 nm and the resolution deteriorates. Not suitable.
Therefore, development of a negative resist material with less light absorption at 193 nm, good sensitivity and high dry etching resistance is desired, and it is suitable for an exposure method using ArF and has good sensitivity and solution. There is an urgent need to develop resists that provide image quality.

Therefore, a resist using a (meth) acrylic ester resin having an aliphatic group with little absorption at 193 nm as a resist for ArF, and a resist having an alicyclic aliphatic group introduced to impart etching resistance are proposed. Has been.
For example, Patent Documents 1 to 3 use a negative resist composition in which a urea-based crosslinking agent is contained in a resin obtained by copolymerizing a repeating unit having an aliphatic group and a repeating unit having an alkali-soluble group. Yes.
Patent Document 4 discloses a negative resist composition containing a vinyl ether compound.
Patent Documents 5 to 8 disclose positive resist compositions containing a polymer having a sulfonamide or sulfonimide structure in the side chain, and Patent Document 9 discloses a fluorinated alkylsulfonamide structure in the side chain. A negative resist composition containing a polymer in the above is known.
However, these negative resist compositions do not achieve sufficient performance in terms of pattern shape, defocus latitude, and the like.

JP 2006-317803 A JP 2000-147769 A Japanese Patent Laid-Open No. 2002-148805 Japanese Patent Laid-Open No. 11-305436 Japanese Unexamined Patent Publication No. 9-120162 JP 2005-23304 A JP 2000-147776 JP 2005-196209 JP Special table 2007-525696 gazette

  The object of the present invention is to solve the problems of the technology for improving the performance of microphotofabrication using far-ultraviolet light, particularly an ArF excimer laser having a wavelength of 193 nm, and more specifically, in pattern shape and defocus latitude. An object of the present invention is to provide an excellent negative resist composition and a resist pattern forming method using the same.

一般式（ＳＡ１）及び（ＳＡ２）に於いて、
Ｒ ^ＳＡ は、アルキル基又はシクロアルキル基を表す。
〔２〕
前記酸の作用により架橋し得る基が、ヒドロキシル基であることを特徴とする〔１〕に記載のネガ型レジスト組成物。
〔３〕
〔１〕又は〔２〕に記載のネガ型レジスト組成物により形成されるレジスト膜。
〔４〕
〔３〕に記載のレジスト膜を露光する工程及び該レジスト膜を現像する工程を含むことを特徴とするレジストパターン形成方法。
本発明は上記の〔１〕〜〔４〕に関するものであるが、以下、その他の事項についても記載している。 As a result of intensive studies on constituent materials in the negative resist composition, the present inventors have found that the above object can be achieved by using a specific material, and have reached the present invention.
That is, the above object is achieved by the following configuration.
[1]
(A) an alkali-soluble resin having a repeating unit having a sulfonamide group represented by the following general formula (SA1) or (SA2), and a repeating unit having a group capable of crosslinking by the action of an acid; A negative resist composition comprising: a compound that crosslinks an alkali-soluble resin by (1); and (C) a compound that generates an acid upon irradiation with actinic rays or radiation.

In general formulas (SA1) and (SA2),
R ^SA represents an alkyl group or a cycloalkyl group .
[2]
The negative resist composition as described in [1], wherein the group capable of crosslinking by the action of an acid is a hydroxyl group .
[3 ]
A resist film formed from the negative resist composition according to [1] or [ 2] .
[ 4 ]
[ 3 ] A method for forming a resist pattern, comprising a step of exposing the resist film according to [ 3 ] and a step of developing the resist film.
The present invention relates to the above [1] to [ 4 ], but other matters are also described below.

  (1) (A) an alkali-soluble resin having a repeating unit having a sulfonamide group represented by the following general formula (SA1) or (SA2), (B) a compound that crosslinks an alkali-soluble resin by the action of an acid, and (C ) A negative resist composition comprising a compound capable of generating an acid upon irradiation with actinic rays or radiation.

In general formulas (SA1) and (SA2),
R ^SA represents a hydrocarbon group.

(2) The negative resist composition as described in (1), wherein R ^SA is an alkyl group or a cycloalkyl group.

  (3) The method includes a step of forming a resist film using the negative resist composition described in (1) or (2), a step of exposing the resist film, and a step of developing the resist film. Resist pattern forming method.

  The present invention can provide a negative resist composition having a good pattern shape and a wide defocus latitude and a resist pattern forming method using the same.

Hereinafter, the best mode for carrying out the present invention will be described.
In addition, in the description of the group (atomic group) in this specification, the description which does not describe substitution and non-substitution includes what does not have a substituent and what has a substituent. . For example, the “alkyl group” includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group).

  The negative resist composition of the present invention comprises (A) an alkali-soluble resin having a repeating unit having a sulfonamide group represented by the general formula (SA1) or (SA2), and (B) an alkali-soluble resin by the action of an acid. The compound which crosslinks and (C) the compound which generate | occur | produces an acid by irradiation of actinic light or a radiation is contained. The negative resist composition of the present invention is formed between the compound (B) and the alkali-soluble resin (A) by the action of an acid generated from the compound (C) upon exposure during resist pattern formation. Then, a crosslinking reaction occurs, and the exposed portion becomes insoluble or hardly soluble in the alkali developer. In some cases, a crosslinking reaction may occur between the compounds of component (B), and the exposed portion may be insolubilized in the alkaline developer. In this way, the exposed portion is selectively insolubilized or hardly soluble in the alkaline developer, thereby producing a dissolution contrast with the alkaline developer in the exposed portion and the unexposed portion, and a fine pattern is obtained by pattern exposure using a mask. Formation becomes possible.

(A) Alkali-soluble resin The negative resist composition of the present invention contains an alkali-soluble resin (A).

The alkali-soluble resin is generally synthesized by polymerizing a monomer having a partial structure to be polymerized by radical polymerization or the like, and has a repeating unit derived from the monomer having a partial structure to be polymerized. Examples of the partial structure to be polymerized include an ethylenically polymerizable partial structure.
The repeating unit used in the alkali-soluble resin (A) is at least one selected from repeating units derived from a monomer having an ethylenically polymerizable partial structure represented by the following general formula (ASM-1) or (ASM-2). Preferably the type is used.

In general formula (ASM-1),
R ^M11 and R ^M12 each independently represent a hydrogen atom, a halogen atom, or an organic group. The plurality of R ^M12 may be the same as or different from each other.
* Represents a bond bonded to the side chain of the alkali-soluble resin.

In the formula (ASM-2),
R ^M13 each independently represents a hydrogen atom, a halogen atom, or an organic group.
Z ′ represents an atomic group for forming an alicyclic structure together with the two carbon atoms shown in the formula (ASM-2).
* Represents a bond bonded to the side chain of the alkali-soluble resin.

Examples of the organic group in R ^{M11 to} R ^M13 include an alkyl group, a halogenated alkyl group, an alkoxy group, a halogenated alkoxy group, a carboxyl group, or a cyano group, and these further have a substituent. Also good. Examples of the substituent that the organic group may further have include a halogen atom, a hydroxyl group, a cyano group, a thiol group, an alkoxy group, an alkylthio group, an alkoxycarbonyl group, an alkylcarbonyloxy group, and an alkylamide group. It is done.

R ^M11 is more preferably a hydrogen atom, an alkyl group (preferably having a carbon number of 1 to 6), an alkyl group substituted with a hydroxyl group, an alkyl group substituted with an alkoxy group, an alkyl group substituted with an alkylcarbonyloxy group, A carboxyl group or a halogenated alkyl group.
R ^M12 is more preferably each independently a hydrogen atom, an alkyl group (preferably having 1 to 6 carbon atoms), a carboxyl group or a halogenated alkyl group.

Preferably, each of R ^M13 is independently a hydrogen atom, a halogen atom (fluorine atom, chlorine atom, bromine atom, iodine atom), an alkyl group (preferably having 1 to 6 carbon atoms), a carboxyl group (preferably having 1 carbon atom). -6), an alkyl group which may have a substituent, a halogenated alkyl group, or an alkoxy group which may have a substituent.

The alicyclic structure formed by Z ′ together with the two carbon atoms shown in the formula (ASM-2) may be substituted with a halogen atom or an organic group. Examples of the organic group which may be substituted for the alicyclic structure include an alkyl group (preferably having 1 to 6 carbon atoms), a monocyclic or polycyclic cycloalkyl group (preferably having 3 to 20 carbon atoms), and alkoxy. Group, alkylamino group, alkoxycarbonyl group, alkylsulfone group, alkylamide group, and the like.
When Z ′ forms an alicyclic structure with two carbon atoms shown in the formula (ASM-2), the alicyclic structure includes cyclopentane, cyclohexane, norbornane, tricyclodecane, tetracyclo And dodecane.

  Specific examples of the repeating unit including a partial structure represented by the formula (ASM-1) include a repeating unit represented by the following general formula (ASM-11).

In the formula (ASM-11),
R ^M11 and R ^M12 have the same ^meaning as in formula (ASM-1).
* Represents a bond bonded to the side chain of the alkali-soluble resin.
X _he represents an oxygen atom, a sulfur atom, or -N (R ^he )-. R ^he represents a hydrogen atom or an alkyl group.

  The structure bonded with * is a group having an alicyclic hydrocarbon structure substituted with an alkaline developer, an aliphatic group, a polar group, a lactone-containing monocyclic ring or a polycyclic group, as described later. A structure such as a cycloaliphatic group is preferred.

  Specific examples of the monomer corresponding to the repeating unit represented by the formula (ASM-11) include acrylic acid, methacrylic acid, α-hydroxymethylacrylic acid, trifluoromethylacrylic acid, maleic acid, fumaric acid, itaconic acid, And their esters, amides, acid anhydrides, and the like.

  The repeating unit represented by the general formula (ASM-2) is preferably a repeating unit represented by any one of the following formulas (ASM-2a) to (ASM-2c).

In the formulas (ASM-2a) to (ASM-2c),
R ^M13 has the same meaning as ^{R M13} in formula (ASM-2).
When there are a plurality of R ^M15 , each represents an organic group independently.
m represents an integer of 0 or more. 0 to 2 is preferable, and 0 or 1 is more preferable.
n ^M1 represents an integer of 0 or more. Preferably it is 0-3.
* Represents a bond bonded to the side chain of the alkali-soluble resin.

As the organic group for R ^M15 , a linear or branched alkyl group, monocyclic or polycyclic cycloalkyl group, alkoxy group, alkylamino group, alkoxycarbonyl group, which may have a substituent, An alkyl sulfone group, an alkylamide group, etc. can be mentioned.
The structure bonded with * is a group having an alicyclic hydrocarbon structure substituted with an alkaline developer, an aliphatic group, a polar group, a lactone-containing monocyclic ring or a polycyclic group, as described later. A structure such as a cycloaliphatic group is preferred.

Various structures serving as side chains of the alkali-soluble resin polymer to be described later may be directly bonded to the partial structures to be polymerized represented by the general formulas (ASM-1) and (ASM-2). (For example, a linear or branched aliphatic structure and / or a monocyclic or polycyclic aliphatic structure) to the polymerized partial structure represented by the general formula (ASM-1) or (ASM-2) It may be bonded.
As an example via a coupling group, the repeating unit represented by the following general formula (ASS-1)-(ASS-3) is mentioned, for example.

In formulas (ASS-1) to (ASS-3),
R ^M11, R ^M12, R ^M15 has the same meaning as R ^M11, R ^M12, R ^M15 in formula (ASM-1) and (ASM-2).
X _he has the same meaning as _{X he} in formula (ASM-11).
* Represents a bond bonded to the side chain of the alkali-soluble resin.
L ^s represents a single bond or an n ^F +1 valent linking group.
m represents an integer of 0 or more. Preferably 0 or 1.
n ^F represents an integer of 1 or more. Preferably it is 1.

As the n ^F +1 valent linking group for L ^S , an oxygen atom, a nitrogen atom, —N (R ^N ) —, —C (═O) —, —S (═O) ₂ —, or the following linking structure group, And a combination thereof.

  The connecting structure group is preferably a linear or branched aliphatic structure, or a monocyclic or polycyclic aliphatic structure. When the said connection structure group is a linear or branched aliphatic structure, Preferably it is C1-C30, More preferably, it is 1-10. When the said connection structure group represents a monocyclic or polycyclic aliphatic structure, Preferably it is C5-C30, More preferably, it is 6-25. Examples of such an aliphatic structure include structures represented by the following (SP1) and (SP2).

  Linking group (SP1)

  Linking group (SP2)

  These structures may further have a substituent, and a polyvalent structure obtained by removing an arbitrary number of hydrogen atoms from these aliphatic structures is also included in the linked structure. Examples of the substituent include alkyl groups, aryl groups, alkoxy groups, alkylcarbonyl groups, alkoxycarbonyl groups, alkylcarbonyloxy groups, alkylamino groups, alkylamide groups, alkylaminocarbonyl groups, alkylthio groups, alkylsulfone groups, alkylsulfonyl groups. Group, alkylsulfonylamide group, and the like.

(A1) Repeating unit having group having solubility in alkali developer The alkali-soluble resin used in the present invention is (a1) a group having solubility in an alkali developer (hereinafter also referred to as “alkali-soluble group”). ). By having this repeating unit, the alkali-soluble resin is dissolved in the alkali-soluble resin. The alkali-soluble resin may be dissolved in an alkali developer when the film is formed using a resist composition, and the alkali-soluble resin is not necessarily soluble in an alkali developer alone. May be. In this case, for example, depending on the properties and contents of other components contained in the resist composition, a film formed using the resist composition often dissolves in an alkaline developer.

  The alkali-soluble resin of the present invention has a sulfonamide group represented by the following general formula (SA1) or (SA2) as an alkali-soluble group.

In general formulas (SA1) and (SA2),
R ^SA represents a hydrocarbon group.

In the general formulas (SA1) and (SA2), R ^SA is preferably a hydrocarbon group having 1 to 15 carbon atoms, an alkyl group having 1 to 10 carbon atoms, and a cycloalkyl group having 3 to 15 carbon atoms. It is more preferable that
Hydrocarbon group R ^SA is as long as it has a carbon atom and hydrogen atom, some of the hydrogen atoms, a hydroxyl group, a carboxyl group, a cyano group, an alkyl group, an alkoxy group, an alkoxycarbonyl group, an acyl group, a cycloalkyl It may be substituted with an alkyl group, an oxocycloalkyl group, an aryl group or the like.

  The sulfonamide group represented by the general formula (SA1) or (SA2) may be directly bonded to the polymerized partial structure in the general formula (ASM-1) or (ASM-2). As illustrated in the formulas (ASS-1) to (ASS-6), they may be bonded to a partial structure that polymerizes via an organic group.

  As the repeating unit having a sulfonamide group represented by the general formula (SA1) or (SA2), a repeating unit represented by the following general formula (SA3) is preferable.

In the general formula (SA3),
R ^X represents a hydrogen atom, a methyl group, a trifluoromethyl group, or a hydroxymethyl group.
L ^S represents a single bond or a divalent or higher valent linking group.
Sa represents a sulfonamide group represented by the general formula (SA1) or (SA2).

In formula (SA3), L ^S is in formula (ASS-1) ~ (ASS -3) in, similar to the L ^S.

  The polymerizable compound corresponding to the repeating unit having a sulfonamide group represented by the general formula (SA1) or (SA2) is synthesized by a known synthesis method from the corresponding sulfonyl chloride and an amine as follows, for example. be able to.

In the formula, X ^{SA ′} represents a halogen atom, and R ^SA′1 and R ^SA′2 each independently represent an organic group.

  Although the repeating unit which has a sulfonamide group represented by general formula (SA1) or (SA2) below is illustrated below, this invention is not limited to these.

In the formula, R ^X represents a hydrogen atom, a methyl group, a trifluoromethyl group, or a hydroxymethyl group.

(A2) Repeating unit having a group that can be crosslinked by the action of an acid The alkali-soluble resin used in the present invention has (a2) a repeating unit having a group that can be crosslinked by the action of an acid. By having this repeating unit, an acid generated from the compound of component (C) by exposure causes a crosslinking reaction with the compound of component (B), and a cross-linked structure is formed in the exposed area, so that an alkaline developer is formed. And insolubilize.

  The group capable of crosslinking by the action of an acid may be a group that reacts with the compound of the component (B) by the action of an acid. Specifically, a group having a nucleophilicity is preferable, and more specifically, a hydroxyl group is formed. Can be mentioned. From the viewpoint of reactivity, a primary or secondary hydroxyl group, particularly a primary hydroxyl group is preferred.

  Examples of the repeating unit having a group that can be cross-linked by the action of an acid include a repeating unit represented by the following general formula (B-1) or (B-2).

In the general formulas (B-1) and (B-2),
R ^X represents a hydrogen atom, a methyl group, a trifluoromethyl group, or a hydroxymethyl group.
L ^S represents an n + 1 valent linking group.
Rh represents a primary alcoholic hydroxyl group or a secondary alcoholic hydroxyl group.
R ^y represents an alkyl group having a primary alcoholic hydroxyl group or a secondary alcoholic hydroxyl group.
R ^z represents an alkyl group or a cycloalkyl group.
n represents an integer of 1 to 3.

In formula (B-1) and (B-2), L ^S is in formula (ASS-1) ~ (ASS -3) in, similar to the L ^S.
The alkyl group having a primary alcoholic hydroxyl group or a secondary alcoholic hydroxyl group for R ^y is preferably an alkyl group having a primary alcoholic hydroxyl group (preferably having 1 to 5 carbon atoms), and particularly preferably a hydroxymethyl group.
R ^z is preferably an alkyl group having 1 to 10 carbon atoms and a cycloalkyl group having 3 to 15 carbon atoms.

Hereinafter, although the specific example of the repeating unit which has the group which can be bridge | crosslinked by the effect | action of an acid is given, this invention is not limited to this.

In the formula, R ^X represents a hydrogen atom, a methyl group, a trifluoromethyl group, or a hydroxymethyl group.

(A3) Repeating unit having aliphatic group The alkali-soluble resin component used in the present invention may contain (a3) a repeating unit having an aliphatic group. By using this repeating unit, the dissolution rate of the resist film can be adjusted and the etching resistance can be increased.
An aliphatic group represents a group having a substituted or unsubstituted linear, branched, monocyclic or polycyclic aliphatic group. However, the aliphatic group is preferably not a group having solubility in an alkali developer, but a group composed of a carbon atom and a hydrogen atom, and a polycyclic aliphatic group is preferable from the viewpoint of etching resistance.

  Examples of the linear or branched aliphatic group include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, pentyl, neopentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl, Tridecyl, tetradecyl, pentadecyl, hexadecyl, heptadecyl, octadecyl, nonadecyl, eicosyl, etc., and monocyclic aliphatic groups such as cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, etc., as polycyclic alkyl groups Includes norbornyl, isobornyl, tricyclodecanyl, tetracyclododecanyl, hexacycloheptadecanyl, adamantyl, diamantyl, spirodecanyl, spiroundecanyl and the like.

  The aliphatic group may be substituted. Examples of the substituent include various substituents such as a halogen atom, an alkyl group, an alkoxy group, an amino group, an alkoxycarbonyl group, an alkylsulfone group, a cyano group, and a hydroxyl group. As these substituents, those suitable for improving the performance of the resist film such as etching resistance and hydrophilicity / hydrophobicity can be selected and used.

Examples of the repeating unit having an aliphatic group are shown below, but the present invention is not limited thereto. In the structural formula, R ^X represents a hydrogen atom, a methyl group, a trifluoromethyl group, or a hydroxymethyl group.

(A4) Repeating unit having a group having an alicyclic hydrocarbon structure substituted with a polar group The alkali-soluble resin used in the present invention comprises a repeating unit having a group having an alicyclic hydrocarbon structure substituted with a polar group. You may have. Thereby, improvement of substrate adhesion, developer compatibility, etc. can be expected. As the alicyclic hydrocarbon structure of the alicyclic hydrocarbon structure substituted with a polar group, a monocyclic or polycyclic structure can be considered, but a polycyclic structure is preferable from the viewpoint of etching resistance.

Specifically, as the alicyclic hydrocarbon structure, the monocyclic structure includes cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, and polycyclic structures such as norbornyl, isobornyl, tricyclodecanyl, tetracyclododecane. Nyl, hexacycloheptadecanyl, adamantyl, diamantyl, spirodecanyl, spiroundecanyl and the like. Of these, adamantyl, diamantyl and norbornyl structures are preferred.

  Examples of the polar group include various polar groups, among which a hydroxyl group and a cyano group are preferable. The group having an alicyclic hydrocarbon structure substituted with the polar group is preferably a group represented by the following general formulas (KCA-1) to (KCA-4).

In formulas (KCA-1) to (KCA-4), R ^{CA1 to} R ^CA3 each independently represents a hydrogen atom, a hydroxyl group, or a cyano group. However, at least one of R ^{CA1 to} R ^CA3 represents a hydroxyl group or a cyano group. Preferably, one or two of R ^{CA1 to} R ^CA3 are hydroxyl groups and the rest are hydrogen atoms. In general formula (KCA-1), it is more preferable that two ^{members out} of R ^{CA1 to} R ^CA3 are hydroxyl groups and the rest are hydrogen atoms.
* Represents a bond bonded to the general formula (ASM-1) or (ASM-2).

Specific examples of the repeating unit having a group represented by formulas (KCA-1) to (KCA-4) will be given below, but the present invention is not limited thereto. R ^X represents a hydrogen atom, a methyl group, a trifluoromethyl group or a hydroxymethyl group.

(A5) Lactone-containing repeating unit The (A) alkali-soluble resin component used in the present invention may contain a repeating unit having a group containing a lactone structure.
These lactone-containing structures are opened by an alkaline developer to generate carboxylic acid. The generated carboxylic acid has a function of increasing the solubility in an alkali developer. At this time, it is considered that the exposed portion forms a three-dimensional network structure by cross-linking, and the penetration of the developer is smaller than that of the unexposed portion. The lactone structure itself is also hydrophobic compared to the carboxyl group after ring opening, and the affinity with the alkaline developer in the exposed area is smaller than that in the unexposed area. By having a lactone structure by the above actions, the dissolution contrast between the unexposed area and the exposed area is further improved, or swelling of the exposed area is suppressed, and an improvement in resolution is expected.

Any lactone structure can be used as long as it has a lactone structure, but a lactone structure having a 5- to 7-membered ring is preferable, and a bicyclo structure or a spiro structure is formed in the 5- to 7-membered lactone structure. Those in which the other ring structures are condensed are preferred. It is more preferable to have a repeating unit having a group having a lactone structure represented by any of the following general formulas (LC1-1) to (LC1-16). Further, a group having a lactone structure may be directly bonded to the main chain. Preferred lactone structures are (LC1-1), (LC1-4), (LC1-5), (LC1-6), (LC1-13), and (LC1-14), particularly preferably (LC1-4 ). By using a specific lactone structure, line edge roughness and development defects are improved.

The lactone structure moiety may or may not have a substituent (R ^LC ). Preferred substituents (R ^LC ) include an alkyl group having 1 to 8 carbon atoms, a cycloalkyl group having 4 to 7 carbon atoms, an alkoxy group having 1 to 8 carbon atoms, an alkoxycarbonyl group having 1 to 8 carbon atoms, and a carboxyl group. , Halogen atom, hydroxyl group, cyano group, acid-decomposable group and the like. More preferred are alkyl groups having 1 to 4 carbon atoms, cyano groups, and acid-decomposable groups. n ^LC represents an integer of 0 to 4. When n ^LC is 2 or more, a plurality of R ^LCs may be the same or different, and a plurality of R ^LCs may be bonded to form a ring.
* Represents a bond bonded to the general formula (ASM-1) or (ASM-2).

  The repeating unit having a lactone structure usually has an optical isomer, but any optical isomer may be used. One optical isomer may be used alone, or a plurality of optical isomers may be mixed and used. When one kind of optical isomer is mainly used, the optical purity (ee) thereof is preferably 90 or more, more preferably 95 or more.

Specific examples of the repeating unit having a group having a lactone structure are given below, but the present invention is not limited thereto. In the formula, R ^X represents a hydrogen atom, a methyl group, a trifluoromethyl group, or a hydroxymethyl group.

The alkali-soluble resin used in the present invention may have a repeating unit represented by the following general formula (VIII).

In general formula (VIII):
Z ₂ represents —O— or —N (R ₄₁ ) —. R ₄₁ represents a hydrogen atom, a hydroxyl group, an alkyl group, or —OSO ₂ —R ₄₂ . R ₄₂ represents an alkyl group, a cycloalkyl group or a camphor residue. The alkyl group of R ₄₁ and R ₄₂ may be substituted with a halogen atom (preferably a fluorine atom) or the like.

  Examples of the repeating unit represented by the general formula (VIII) include the following specific examples, but the present invention is not limited thereto.

The composition ratio of each component of the repeating unit varies depending on the repeating unit used, but (a1) the repeating unit having a sulfonamide group represented by the general formula (SA1) or (SA2) is generally 5 to 80 mol%. , Preferably 8 to 75 mol%, more preferably 10 to 70 mol%, and (a2) the repeating unit having a group capable of crosslinking by the action of an acid is generally 5 to 55 mol%, preferably 8 to 50 mol%. (A3) The repeating unit having an aliphatic group is generally 3 to 70 mol%, preferably 5 to 60 mol%, more preferably 8 to 50 mol%. (A4) The repeating unit having a group having an alicyclic hydrocarbon structure substituted with a polar group is generally 1 to 50 mol%, preferably 3 to 45 mol%, more preferably 5 to 4 Is the mole percent.
Furthermore, (a5) when having a repeating unit having a monocyclic or polycyclic aliphatic group having a lactone structure, the composition ratio of the repeating unit is generally 3 to 50 mol%, preferably 5 to 40 mol%, More preferably, it is 8-35 mol%.

  Alkali-soluble resin consists of the copolymer of the said repeating unit, and a weight average molecular weight (Mw) is 1000-100000 normally, Preferably it is 1000-20000, More preferably, it is 1000-10000. The value (dispersion degree (Mw / Mn)) obtained by dividing the weight average molecular weight by the number average molecular weight is 1 to 3, preferably 1 to 2.5, and more preferably 1 to 2.0.

The alkali-soluble resin used in the present invention can be synthesized according to a conventional method (for example, radical polymerization). For example, as a general synthesis method, a monomer polymerization method in which a monomer species and an initiator are dissolved in a solvent and the polymerization is performed by heating, and a solution of the monomer species and the initiator is dropped into the heating solvent over 1 to 10 hours. The dropping polymerization method is added, and the dropping polymerization method is preferable. Examples of the reaction solvent include ethers such as tetrahydrofuran, 1,4-dioxane, diisopropyl ether, ketones such as methyl ethyl ketone and methyl isobutyl ketone, ester solvents such as ethyl acetate, amide solvents such as dimethylformamide and dimethylacetamide, Furthermore, the solvent which melt | dissolves the composition of this invention like the below-mentioned propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, and cyclohexanone is mentioned. More preferably, the polymerization is performed using the same solvent as that used in the resist composition of the present invention. Thereby, generation | occurrence | production of the particle at the time of a preservation | save can be suppressed.

  The polymerization reaction is preferably performed in an inert gas atmosphere such as nitrogen or argon. As a polymerization initiator, a commercially available radical initiator (azo initiator, peroxide, etc.) is used to initiate the polymerization. As the radical initiator, an azo initiator is preferable, and an azo initiator having an ester group, a cyano group, or a carboxyl group is preferable. Preferred initiators include azobisisobutyronitrile, azobisdimethylvaleronitrile, dimethyl 2,2′-azobis (2-methylpropionate) and the like. If desired, an initiator is added or added in portions, and after completion of the reaction, it is put into a solvent and a desired polymer is recovered by a method such as powder or solid recovery. The concentration of the reaction is 5 to 50% by mass, preferably 10 to 30% by mass. The reaction temperature is usually 10 ° C to 150 ° C, preferably 30 ° C to 120 ° C, more preferably 60-100 ° C.

Alkali-soluble resin can be used individually by 1 type or in combination of 2 or more types.
The content of the alkali-soluble resin in the negative resist composition is preferably 40 to 99% by mass, more preferably 50 to 97% by mass, and still more preferably 60 to 95%, based on the total solid content of the negative resist composition. % By mass.

(B) Compound that crosslinks alkali-soluble resin by the action of acid The negative resist composition of the present invention contains a compound that crosslinks the alkali-soluble resin by the action of an acid (hereinafter also referred to as “crosslinking agent”). The crosslinking agent used in the present invention can be appropriately selected from known crosslinking agents that crosslink alkali-soluble resins by the action of acids, for example, compounds described in JP-A No. 2004-117876, JP-A No. 2002-262880, etc. However, a compound having two or more partial structures represented by the following general formula (CLNM-1) is preferable.
The crosslinking agent is more preferably a compound having 2 to 8 partial structures represented by the general formula (CLNM-1).

In the general formula (CLNM-1),
R ^NM1 represents a hydrogen atom, an alkyl group, a cycloalkyl group or an oxoalkyl group.

In general formula (CLNM-1), the alkyl group of R ^NM1 is preferably an alkyl group having 1 to 6 carbon atoms, such as methyl, ethyl, propyl, isopropyl, butyl, isobutyl, t -A butyl group, a pentyl group, a hexyl group, etc. can be mentioned.
The cycloalkyl group of R ^NM1 is preferably a cycloalkyl group having 5 to 6 carbon atoms, and examples thereof include a cyclopentyl group and a cyclohexyl group.
The oxoalkyl group of R ^NM1 is preferably an oxoalkyl group having 3 to 6 carbon atoms, and examples thereof include a β-oxopropyl group, a β-oxobutyl group, a β-oxopentyl group, and a β-oxohexyl group. it can.

  As a more preferable embodiment of the compound having two or more partial structures represented by the general formula (CLNM-1), a urea-based crosslinking agent represented by the following general formula (CLNM-2), the following general formula (CLNM-3) , A glycoluril crosslinking agent represented by the following general formula (CLNM-4), and a melamine crosslinking agent represented by the following general formula (CLNM-5).

In the general formula (CLNM-2),
, Each R ^NM1 independently, are those in formula (CLNM-1) ^at, the same as ^{R NM1.}
R ^NM2 each independently represents a hydrogen atom, an alkyl group or a cycloalkyl group.

R ^NM2 alkyl group (preferably having 1 to 6 carbon atoms), cycloalkyl group (preferably having 5 to 6 carbon atoms), more specifically, methyl group, ethyl group, propyl group, isopropyl group, butyl group, Examples thereof include an isobutyl group, a t-butyl group, a pentyl group, a cyclopentyl group, a hexyl group, and a cyclohexyl group.

  Specific examples of the urea crosslinking agent represented by the general formula (CLNM-2) include, for example, N, N-di (methoxymethyl) urea, N, N-di (ethoxymethyl) urea, N, N-di (Propoxymethyl) urea, N, N-di (isopropoxymethyl) urea, N, N-di (butoxymethyl) urea, N, N-di (t-butoxymethyl) urea, N, N-di (cyclohexyloxy) And methyl) urea, N, N-di (cyclopentyloxymethyl) urea, N, N-di (adamantyloxymethyl) urea, N, N-di (norbornyloxymethyl) urea and the like.

In the general formula (CLNM-3),
, Each R ^NM1 independently, are those in formula (CLNM-1) ^at, the same as ^{R NM1.}
R ^NM3 each independently represents a hydrogen atom, a hydroxyl group, an alkyl group, a cycloalkyl group, an oxoalkyl group, an alkoxy group or an oxoalkoxy group.
G represents a single bond, an oxygen atom, a sulfur atom, an alkylene group or a carbonyl group.

R ^NM3 alkyl group (preferably having 1 to 6 carbon atoms), cycloalkyl group (preferably having 5 to 6 carbon atoms), oxoalkyl group (preferably having 3 to 6 carbon atoms), alkoxy group (having 1 to 6 carbon atoms) Oxoalkoxy group (preferably having 2 to 6 carbon atoms), more specifically, methyl group, ethyl group, propyl group, isopropyl group, butyl group, isobutyl group, t-butyl group, pentyl group, cyclopentyl Group, hexyl group, cyclohexyl group, β-oxopropyl group, β-oxobutyl group, β-oxopentyl group, β-oxohexyl group, methoxy group, ethoxy group, propyloxy group, isopropyloxy group, butoxy group, isobutoxy group Group, t-butoxy group, pentoxy group, hexyloxy group, β-oxopropoxy group, β-oxobutoxy group, β-oxo Ntokishi group, Kishirokishi group and the like to the β- oxo.
Specific examples of the alkylene group of G (preferably having 1 to 3 carbon atoms) include a methylene group, an ethylene group, a propylene group, a 1-methylethylene group, a hydroxymethylene group, and a cyanomethylene group.

  Specific examples of the alkylene urea crosslinking agent represented by the general formula (CLNM-3) include, for example, N, N-di (methoxymethyl) -4,5-di (methoxymethyl) ethylene urea, N, N- Di (ethoxymethyl) -4,5-di (ethoxymethyl) ethyleneurea, N, N-di (propoxymethyl) -4,5-di (propoxymethyl) ethyleneurea, N, N-di (isopropoxymethyl) -4,5-di (isopropoxymethyl) ethyleneurea, N, N-di (butoxymethyl) -4,5-di (butoxymethyl) ethyleneurea, N, N-di (t-butoxymethyl) -4 5-di (t-butoxymethyl) ethyleneurea, N, N-di (cyclohexyloxymethyl) -4,5-di (cyclohexyloxymethyl) ethyleneurea, N, N-di (cyclo Nthyloxymethyl) -4,5-di (cyclopentyloxymethyl) ethyleneurea, N, N-di (adamantyloxymethyl) -4,5-di (adamantyloxymethyl) ethyleneurea, N, N-di (nor Bornyloxymethyl) -4,5-di (norbornyloxymethyl) ethyleneurea and the like.

In the general formula (CLNM-4),
, Each R ^NM1 independently, are those in formula (CLNM-1) ^at, the same as ^{R NM1.}
R ^NM4 each independently represents a hydrogen atom, a hydroxyl group, an alkyl group, a cycloalkyl group or an alkoxy group.

R ^NM4 alkyl group (preferably having 1 to 6 carbon atoms), cycloalkyl group (preferably having 5 to 6 carbon atoms), alkoxy group (preferably having 1 to 6 carbon atoms), more specifically, methyl group, Examples include an ethyl group, a butyl group, a cyclopentyl group, a cyclohexyl group, a methoxy group, an ethoxy group, and a butoxy group.

Specific examples of the glycoluril-based crosslinking agent represented by the general formula (CLNM-4) include, for example, N, N, N, N-tetra (methoxymethyl) glycoluril, N, N, N, N-tetra ( Ethoxymethyl) glycoluril, N, N, N, N-tetra (propoxymethyl) glycoluril, N, N, N, N-tetra (isopropoxymethyl) glycoluril, N, N, N, N-tetra (butoxy) Methyl) glycoluril, N, N, N, N-tetra (t-butoxymethyl) glycoluril, N, N, N, N-tetra (cyclohexyloxymethyl) glycoluril, N, N, N, N-tetra ( Cyclopentyloxymethyl) glycoluril, N, N, N, N-tetra (adamantyloxymethyl) glycoluril, N, N, N, N- Tiger (norbornyloxymethyl) glycoluril, and the like.

In the general formula (CLNM-5),
, Each R ^NM1 independently, are those in formula (CLNM-1) ^at, the same as ^{R NM1.}
R ^NM5 each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, or an atomic group represented by the following general formula (CLNM-5 ′).
R ^NM6 represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, or an atomic group represented by the following general formula (CLNM-5 ″).

In the general formula (CLNM-5 ′),
R ^NM1 are those in formula (CLNM-1) ^at, the same as ^{R NM1.}
In the general formula (CLNM-5 ″),
R ^NM1 of the general formula are those (CLNM-1) in ^at, the same as ^{R NM1, R NM5} are those formula (CLNM-5) in the same manner as in ^{R NM5.}

Alkyl group R ^NM5 and ^{R NM6} (1 to 6 carbon atoms is preferred), cycloalkyl groups (5 to 6 carbon atoms is preferred), an aryl group (having 6 to 10 carbon atoms is preferred), and more specifically, Examples thereof include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a t-butyl group, a pentyl group, a cyclopentyl group, a hexyl group, a cyclohexyl group, a phenyl group, and a naphthyl group.

Examples of the melamine crosslinking agent represented by the general formula (CLNM-5) include N, N, N, N, N, N-hexa (methoxymethyl) melamine, N, N, N, N, N, N Hexa (ethoxymethyl) melamine, N, N, N, N, N, N-hexa (propoxymethyl) melamine, N, N, N, N, N, N-hexa (isopropoxymethyl) melamine, N, N , N, N, N, N-hexa (butoxymethyl) melamine, N, N, N, N, N, N-hexa (t-butoxymethyl) melamine, N, N, N, N, N, N-hexa (Cyclohexyloxymethyl) melamine, N, N, N, N, N, N-hexa (cyclopentyloxymethyl) melamine, N, N, N, N, N, N-hexa (adamantyloxymethyl) melamine, N, N , N, N, N, N-hexa ( Rubornyloxymethyl) melamine, N, N, N, N, N, N-hexa (methoxymethyl) acetoguanamine, N, N, N, N, N, N-hexa (ethoxymethyl) acetoguanamine, N, N, N, N, N, N-hexa (propoxymethyl) acetoguanamine, N, N, N, N, N, N-hexa (isopropoxymethyl) acetoguanamine, N, N, N, N, N, N -Hexa (butoxymethyl) acetoguanamine, N, N, N, N, N, N-hexa (t-butoxymethyl) acetoguanamine, N, N, N, N, N, N-hexa (methoxymethyl) benzoguanamine, N, N, N, N, N, N-hexa (ethoxymethyl) benzoguanamine, N, N, N, N, N, N-hexa (propoxymethyl) benzoguanamine, N, N, N, N, N, N Hexa (isopropoxymethyl) benzoguanamine, N, N, N, N, N, N-hexa (butoxymethyl) benzoguanamine, N, N, N, N, N, N-hexa (t-butoxymethyl) benzoguanamine, etc. Can be mentioned.

The groups represented by R ^{NM1 to} R ^NM6 in the general formulas (CLNM-1) to (CLNM-5) may further have a substituent. Examples of the substituent that R ^{NM1 to} R ^NM6 may have include, for example, a halogen atom, a hydroxyl group, a nitro group, a cyano group, a carboxyl group, a cycloalkyl group (preferably having 3 to 20 carbon atoms), and an aryl group (preferably 6 to 14 carbon atoms), alkoxy group (preferably 1 to 20 carbon atoms), cycloalkoxy group (preferably 3 to 20 carbon atoms), acyl group (preferably 2 to 20 carbon atoms), acyloxy group (preferably carbon 2-20) etc. can be mentioned.

  In the present invention, the cross-linking agents may be used alone or in admixture of plural kinds. Among the urea-based cross-linking agents, alkylene urea-based cross-linking agents (preferably ethylene urea-based cross-linking agents), glycoluril-based cross-linking agents. It is preferable to use one or more of these, and it is more preferable to use one or more glycoluril-based crosslinking agents. In addition, other cross-linking agents can be used in combination as appropriate.

  In the present invention, the crosslinking agent is preferably contained in the total solid content of the negative resist composition in an amount of 1 to 50% by mass, more preferably 2 to 40% by mass, and more preferably 3 to 30% by mass. It is particularly preferable to do this. By setting the content of the cross-linking agent to 1 to 50% by mass in the total solid content, the problem that the cross-linking is not sufficient and pattern formation is not possible, the sensitivity is lowered, and other than the exposure is performed. It is possible to solve the problem that the portion is also cross-linked and the amount of resin necessary for etching resistance cannot be secured.

(C) Compound that generates acid upon irradiation with actinic ray or radiation The negative resist composition of the present invention contains a compound that generates acid upon irradiation with actinic ray or radiation (hereinafter also referred to as “acid generator”). To do.
As an acid generator, a photoinitiator for photocationic polymerization, a photoinitiator for photoradical polymerization, a photodecoloring agent for dyes, a photochromic agent, an actinic ray or radiation generally used for a micro resist, etc. A known compound that generates an acid by irradiation and a mixture thereof can be appropriately selected and used.

  Examples thereof include diazonium salts, phosphonium salts, sulfonium salts, iodonium salts, imide sulfonates, oxime sulfonates, diazodisulfones, disulfones, and o-nitrobenzyl sulfonates.

  Preferred compounds among the acid generators include compounds represented by the following general formulas (ZI), (ZII), and (ZIII).

In the general formula (ZI),
R ₂₀₁ , R ₂₀₂ and R ₂₀₃ each independently represents an organic group.
The carbon number of the organic group as R ₂₀₁ , R ₂₀₂ and R ₂₀₃ is generally 1 to 30, preferably 1
~ 20.

Two of R _{201 to} R ₂₀₃ may be bonded to form a ring structure, and the ring may contain an oxygen atom, a sulfur atom, an ester bond, an amide bond, or a carbonyl group. The two of the group formed by bonding of the R ₂₀₁ to R _203, there can be mentioned an alkylene group (e.g., butylene, pentylene).
Z ⁻ represents a non-nucleophilic anion.

Examples of the non-nucleophilic anion as Z ⁻ include a sulfonate anion, a carboxylate anion, a sulfonylimide anion, a bis (alkylsulfonyl) imide anion, and a tris (alkylsulfonyl) methyl anion.
A non-nucleophilic anion is an anion that has an extremely low ability to cause a nucleophilic reaction, and is an anion that can suppress degradation over time due to an intramolecular nucleophilic reaction. This improves the temporal stability of the resist.
Examples of the sulfonate anion include an aliphatic sulfonate anion, an aromatic sulfonate anion, and a camphor sulfonate anion.

  Examples of the carboxylate anion include an aliphatic carboxylate anion, an aromatic carboxylate anion, and an aralkylcarboxylate anion.

  The aliphatic moiety in the aliphatic sulfonate anion may be an alkyl group or a cycloalkyl group, preferably an alkyl group having 1 to 30 carbon atoms and a cycloalkyl group having 3 to 30 carbon atoms such as methyl. Group, ethyl group, propyl group, isopropyl group, n-butyl group, isobutyl group, sec-butyl group, pentyl group, neopentyl group, hexyl group, heptyl group, octyl group, nonyl group, decyl group, undecyl group, dodecyl group , Tridecyl group, tetradecyl group, pentadecyl group, hexadecyl group, heptadecyl group, octadecyl group, nonadecyl group, eicosyl group, cyclopropyl group, cyclopentyl group, cyclohexyl group, adamantyl group, norbornyl group, boronyl group and the like.

  The aromatic group in the aromatic sulfonate anion is preferably an aryl group having 6 to 14 carbon atoms, such as a phenyl group, a tolyl group, and a naphthyl group.

The alkyl group, cycloalkyl group and aryl group in the aliphatic sulfonate anion and aromatic sulfonate anion may have a substituent. Examples of the substituent of the alkyl group, cycloalkyl group, and aryl group in the aliphatic sulfonate anion and aromatic sulfonate anion include, for example, a nitro group, a halogen atom (fluorine atom, chlorine atom, bromine atom, iodine atom), carboxyl group , Hydroxyl group, amino group, cyano group, alkoxy group (preferably having 1 to 15 carbon atoms), cycloalkyl group (preferably having 3 to 15 carbon atoms), aryl group (preferably having 6 to 14 carbon atoms), alkoxycarbonyl group ( Preferably 2 to 7 carbon atoms, acyl group (preferably 2 to 12 carbon atoms), alkoxycarbonyloxy group (preferably 2 to 7 carbon atoms), alkylthio group (preferably 1 to 15 carbon atoms), alkylsulfonyl group (Preferably 1 to 15 carbon atoms), alkyliminosulfonyl group (preferably 2 to 15 carbon atoms), ant Ruoxysulfonyl group (preferably having 6 to 20 carbon atoms), alkylaryloxysulfonyl group (preferably having 7 to 20 carbon atoms), cycloalkylaryloxysulfonyl group (preferably having 10 to 20 carbon atoms), alkyloxyalkyloxy group (Preferably having 5 to 20 carbon atoms), a cycloalkylalkyloxyalkyloxy group (preferably having 8 to 20 carbon atoms), and the like. About the aryl group and ring structure which each group has, an alkyl group (preferably C1-C15) can further be mentioned as a substituent.

  Examples of the aliphatic moiety in the aliphatic carboxylate anion include the same alkyl group and cycloalkyl group as in the aliphatic sulfonate anion.

  Examples of the aromatic group in the aromatic carboxylate anion include the same aryl group as in the aromatic sulfonate anion.

  The aralkyl group in the aralkyl carboxylate anion is preferably an aralkyl group having 6 to 12 carbon atoms, such as a benzyl group, a phenethyl group, a naphthylmethyl group, a naphthylethyl group, and a naphthylmethyl group.

  The alkyl group, cycloalkyl group, aryl group and aralkyl group in the aliphatic carboxylate anion, aromatic carboxylate anion and aralkylcarboxylate anion may have a substituent. Examples of the substituent of the alkyl group, cycloalkyl group, aryl group and aralkyl group in the aliphatic carboxylate anion, aromatic carboxylate anion and aralkylcarboxylate anion include, for example, the same halogen atom and alkyl as in the aromatic sulfonate anion Group, cycloalkyl group, alkoxy group, alkylthio group and the like.

  Examples of the sulfonylimide anion include saccharin anion.

  The alkyl group in the bis (alkylsulfonyl) imide anion and tris (alkylsulfonyl) methyl anion is preferably an alkyl group having 1 to 5 carbon atoms, such as a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, An isobutyl group, a sec-butyl group, a pentyl group, a neopentyl group, and the like can be given. Examples of substituents for these alkyl groups include halogen atoms, alkyl groups substituted with halogen atoms, alkoxy groups, alkylthio groups, alkyloxysulfonyl groups, aryloxysulfonyl groups, cycloalkylaryloxysulfonyl groups, and the like. Alkyl groups substituted with fluorine atoms are preferred.

  Examples of other non-nucleophilic anions include fluorinated phosphorus, fluorinated boron, and fluorinated antimony.

Examples of the non-nucleophilic anion of Z ⁻ include an aliphatic sulfonate anion in which the α-position of the sulfonic acid is substituted with a fluorine atom, an aromatic sulfonate anion substituted with a fluorine atom or a group having a fluorine atom, and an alkyl group. A bis (alkylsulfonyl) imide anion substituted with a fluorine atom and a tris (alkylsulfonyl) methide anion wherein an alkyl group is substituted with a fluorine atom are preferred. The non-nucleophilic anion is more preferably a perfluoroaliphatic sulfonic acid anion having 4 to 8 carbon atoms, a benzenesulfonic acid anion having a fluorine atom, still more preferably a nonafluorobutanesulfonic acid anion, a perfluorooctanesulfonic acid anion, It is a pentafluorobenzenesulfonic acid anion and 3,5-bis (trifluoromethyl) benzenesulfonic acid anion.
Examples of the organic group as R ₂₀₁ , R ₂₀₂ and R ₂₀₃ include the corresponding groups in the compounds (ZI-1), (ZI-2) and (ZI-3) described later.
In addition, the compound which has two or more structures represented by general formula (ZI) may be sufficient. For example, the general formula at least one of R ₂₀₁ to R ₂₀₃ of a compound represented by (ZI) is, at least one bond with structure of R ₂₀₁ to R ₂₀₃ of another compound represented by formula (ZI) It may be a compound.

  More preferable (ZI) components include compounds (ZI-1), (ZI-2), and (ZI-3) described below.

The compound (ZI-1) is at least one of the aryl groups R ₂₀₁ to R ₂₀₃ in formula (ZI), arylsulfonium compounds, namely, compounds containing an arylsulfonium as a cation.

In the arylsulfonium compound, all of R _{201 to} R ₂₀₃ may be an aryl group, or R ₂₀₁
Some of to R ₂₀₃ is an aryl group and the remainder may be an alkyl group or a cycloalkyl group.

Examples of the arylsulfonium compound include triarylsulfonium compounds, diarylalkylsulfonium compounds, aryldialkylsulfonium compounds, diarylcycloalkylsulfonium compounds, and aryldicycloalkylsulfonium compounds.
The aryl group of the arylsulfonium compound is preferably a phenyl group or a naphthyl group, and more preferably a phenyl group. The aryl group may be an aryl group having a heterocyclic structure having an oxygen atom, a nitrogen atom, a sulfur atom or the like. Examples of the aryl group having a heterocyclic structure include a pyrrole residue (a group formed by losing one hydrogen atom from pyrrole) and a furan residue (a group formed by losing one hydrogen atom from furan). Groups), thiophene residues (groups formed by the loss of one hydrogen atom from thiophene), indole residues (groups formed by the loss of one hydrogen atom from indole), benzofuran residues ( A group formed by losing one hydrogen atom from benzofuran), a benzothiophene residue (a group formed by losing one hydrogen atom from benzothiophene), and the like. When the arylsulfonium compound has two or more aryl groups, the two or more aryl groups may be the same or different.

  The alkyl group or cycloalkyl group that the arylsulfonium compound has as necessary is preferably a linear or branched alkyl group having 1 to 15 carbon atoms and a cycloalkyl group having 3 to 15 carbon atoms, such as a methyl group, Examples thereof include an ethyl group, a propyl group, an n-butyl group, a sec-butyl group, a t-butyl group, a cyclopropyl group, a cyclobutyl group, and a cyclohexyl group.

Aryl group, alkyl group of R ₂₀₁ to R _203, cycloalkyl group, an alkyl group (for example, 1 to 15 carbon atoms), a cycloalkyl group (for example, 3 to 15 carbon atoms), an aryl group (for example, 6 to 14 carbon atoms) , An alkoxy group (for example, having 1 to 15 carbon atoms), a halogen atom, a hydroxyl group, or a phenylthio group may be substituted. Preferred substituents are linear or branched alkyl groups having 1 to 12 carbon atoms, cycloalkyl groups having 3 to 12 carbon atoms, and linear, branched or cyclic alkoxy groups having 1 to 12 carbon atoms, more preferably carbon. An alkyl group having 1 to 4 carbon atoms and an alkoxy group having 1 to 4 carbon atoms. The substituent may be substituted with any one of the three R _{201 to} R ₂₀₃ , or may be substituted with all three. When R _{201 to} R ₂₀₃ are an aryl group, the substituent is preferably substituted at the p-position of the aryl group.

Next, the compound (ZI-2) will be described.
The compound (ZI-2) is a compound in which R _{201 to} R ₂₀₃ in the general formula (ZI) each independently represents an organic group having no aromatic ring. Here, the aromatic ring includes an aromatic ring containing a hetero atom.

The organic group having no aromatic ring as R ₂₀₁ to R ₂₀₃ generally has 1 to 30 carbon atoms, preferably 1 to 20 carbon atoms.

R _{201 to} R ₂₀₃ are each independently preferably an alkyl group, a cycloalkyl group, an allyl group, or a vinyl group, more preferably a linear or branched 2-oxoalkyl group, 2-oxocycloalkyl group, alkoxy group. A carbonylmethyl group, particularly preferably a linear or branched 2-oxoalkyl group.

The alkyl group and cycloalkyl group of R ₂₀₁ to R _203, preferably a linear or branched alkyl group having 1 to 10 carbon atoms (e.g., methyl group, ethyl group, propyl group, butyl group, pentyl group), carbon Examples thereof include cycloalkyl groups of several 3 to 10 (cyclopentyl group, cyclohexyl group, norbornyl group). More preferred examples of the alkyl group include a 2-oxoalkyl group and an alkoxycarbonylmethyl group. More preferred examples of the cycloalkyl group include a 2-oxocycloalkyl group.

The 2-oxoalkyl group may be either linear or branched, and a group having> C = O at the 2-position of the above alkyl group is preferable.
The 2-oxocycloalkyl group is preferably a group having> C═O at the 2-position of the cycloalkyl group.

  The alkoxy group in the alkoxycarbonylmethyl group is preferably an alkoxy group having 1 to 5 carbon atoms (methoxy group, ethoxy group, propoxy group, butoxy group, pentoxy group).

R _{201 to} R ₂₀₃ may be further substituted with a halogen atom, an alkoxy group (for example, having 1 to 5 carbon atoms), a hydroxyl group, a cyano group, or a nitro group.

  The compound (ZI-3) is a compound represented by the following general formula (ZI-3), and is a compound having a phenacylsulfonium salt structure.

In general formula (ZI-3),
R _{1c to} R _5c each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an alkoxy group or a halogen atom.
R _6c and R _7c each independently represents a hydrogen atom, an alkyl group or a cycloalkyl group.
R _x and R _y each independently represents an alkyl group, a cycloalkyl group, an allyl group or a vinyl group.

Any two or more of R _{1c to} R _5c , R _6c and R _7c , and R _x and R _y may be bonded to each other to form a ring structure, and this ring structure includes an oxygen atom and a sulfur atom. , An ester bond and an amide bond may be included. Examples of the group formed by combining any two or more of R _{1c to} R _5c , R _6c and R _7c , and R _x and R _y include a butylene group and a pentylene group.

Zc ⁻ represents a non-nucleophilic anion, and examples thereof include the same non-nucleophilic anion as Z ^{− in} formula (ZI).

The alkyl group as R _{1c to} R _7c may be either linear or branched, for example, an alkyl group having 1 to 20 carbon atoms, preferably a linear or branched alkyl group having 1 to 12 carbon atoms ( Examples thereof include a methyl group, an ethyl group, a linear or branched propyl group, a linear or branched butyl group, and a linear or branched pentyl group. Examples of the cycloalkyl group include cyclohexane having 3 to 8 carbon atoms. An alkyl group (for example, a cyclopentyl group, a cyclohexyl group) can be mentioned.

The alkoxy group as R _{1c to} R _{5c may} be linear, branched or cyclic, for example, an alkoxy group having 1 to 10 carbon atoms, preferably a linear or branched alkoxy group having 1 to 5 carbon atoms. (For example, methoxy group, ethoxy group, linear or branched propoxy group, linear or branched butoxy group, linear or branched pentoxy group), C3-C8 cyclic alkoxy group (for example, cyclopentyloxy group, cyclohexyloxy group) ).

Preferably, any of R _{1c to} R _5c is a linear or branched alkyl group, a cycloalkyl group, or a linear, branched or cyclic alkoxy group, and more preferably the sum of the carbon number of R _{1c to} R _5c. Is 2-15. Thereby, solvent solubility improves more and generation | occurrence | production of a particle is suppressed at the time of a preservation | save.

_Examples of the alkyl group and cycloalkyl group as R _x and R _y include the same alkyl group and cycloalkyl group as in R _{1c to} R _7c , such as a 2-oxoalkyl group, a 2-oxocycloalkyl group, an alkoxy group. A carbonylmethyl group is more preferred.

Examples of the 2-oxoalkyl group and 2-oxocycloalkyl group include a group having> C═O at the 2-position of the alkyl group or cycloalkyl group as R _{1c to} R _7c .

Examples of the alkoxy group in the alkoxycarbonylmethyl group include the same alkoxy groups as in R _{1c to} R _5c .

R _x and R _y are preferably an alkyl group or cycloalkyl group having 4 or more carbon atoms, more preferably 6 or more, and still more preferably 8 or more alkyl groups or cycloalkyl groups.

In general formulas (ZII) and (ZIII),
R ₂₀₄ to R ₂₀₇ each independently represents an aryl group, an alkyl group or a cycloalkyl group.

Phenyl group and a naphthyl group are preferred as the aryl group of R ₂₀₄ to R _207, more preferably a phenyl group. Aryl group R ₂₀₄ to R ₂₀₇ represents an oxygen atom, a nitrogen atom, may be an aryl group having a heterocyclic structure having a sulfur atom and the like. Examples of the aryl group having a heterocyclic structure include a pyrrole residue (a group formed by losing one hydrogen atom from pyrrole) and a furan residue (a group formed by losing one hydrogen atom from furan). Groups), thiophene residues (groups formed by the loss of one hydrogen atom from thiophene), indole residues (groups formed by the loss of one hydrogen atom from indole), benzofuran residues ( A group formed by losing one hydrogen atom from benzofuran), a benzothiophene residue (a group formed by losing one hydrogen atom from benzothiophene), and the like.

The alkyl group and cycloalkyl group in R ₂₀₄ to R _207, preferably a linear or branched alkyl group having 1 to 10 carbon atoms (e.g., methyl group, ethyl group, propyl group, butyl group, pentyl group), carbon Examples thereof include cycloalkyl groups of several 3 to 10 (cyclopentyl group, cyclohexyl group, norbornyl group).

Aryl group, alkyl group of R ₂₀₄ to R _207, cycloalkyl groups may have a substituent. Aryl group, alkyl group of R ₂₀₄ to R _207, the cycloalkyl group substituent which may be possessed by, for example, an alkyl group (for example, 1 to 15 carbon atoms), a cycloalkyl group (for example, 3 to 15 carbon atoms ), An aryl group (for example, having 6 to 15 carbon atoms), an alkoxy group (for example, having 1 to 15 carbon atoms), a halogen atom, a hydroxyl group, and a phenylthio group.

Z ⁻ represents a non-nucleophilic anion, and examples thereof include the same as the non-nucleophilic anion of Z ^{− in} formula (ZI).

  Examples of the acid generator further include compounds represented by the following general formulas (ZIV), (ZV), and (ZVI).

In general formulas (ZIV) to (ZVI),
Ar ₃ and Ar ₄ each independently represents an aryl group.
R ₂₀₈ , R ₂₀₉ and R ₂₁₀ each independently represents an alkyl group, a cycloalkyl group or an aryl group.
A represents an alkylene group, an alkenylene group or an arylene group.

Among the acid generators, compounds represented by the general formulas (ZI) to (ZIII) are more preferable.
Further, the acid generator is preferably a compound that generates an acid having one sulfonic acid group or imide group, more preferably a compound that generates monovalent perfluoroalkanesulfonic acid, or a monovalent fluorine atom or fluorine atom. A compound that generates an aromatic sulfonic acid substituted with a group containing fluorinated acid, or a compound that generates a monovalent fluorine atom or imide acid substituted with a group containing a fluorine atom, and even more preferably, It is a sulfonium salt of a substituted alkanesulfonic acid, a fluorine-substituted benzenesulfonic acid, a fluorine-substituted imide acid or a fluorine-substituted methide acid. The acid generator that can be used is particularly preferably a fluorinated substituted alkane sulfonic acid, a fluorinated substituted benzene sulfonic acid or a fluorinated substituted imido acid whose pKa of the generated acid is pKa = -1 or less, and the sensitivity is improved. .

  Among acid generators, particularly preferred examples are listed below, but the present invention is not limited thereto.

An acid generator can be used individually by 1 type or in combination of 2 or more types.
The content of the acid generator in the negative resist composition is preferably 0.1 to 20% by mass, more preferably 0.5 to 10% by mass, still more preferably, based on the total solid content of the negative resist composition. Is 1-7 mass%.

Basic Compound The negative resist composition of the present invention preferably contains a basic compound in order to reduce the change in performance over time from exposure to heating.
Preferred examples of the basic compound include compounds having structures represented by the following general formulas (A) to (E).

In general formulas (A) to (E),
R ²⁰⁰ , R ²⁰¹ and R ²⁰² may be the same or different, and are a hydrogen atom, an alkyl group (preferably having 1 to 20 carbon atoms), a cycloalkyl group (preferably having 3 to 20 carbon atoms) or an aryl group (having a carbon number). 6-20), wherein R ²⁰¹ and R ²⁰² may combine with each other to form a ring.
About the said alkyl group, as an alkyl group which has a substituent, a C1-C20 aminoalkyl group, a C1-C20 hydroxyalkyl group, or a C1-C20 cyanoalkyl group is preferable.
R ²⁰³ , R ²⁰⁴ , R ²⁰⁵ and R ²⁰⁶ may be the same or different and each represents an alkyl group having 1 to 20 carbon atoms.
The alkyl groups in these general formulas (A) to (E) are more preferably unsubstituted.

Preferred compounds include guanidine, aminopyrrolidine, pyrazole, pyrazoline, piperazine, aminomorpholine, aminoalkylmorpholine, piperidine and the like, and more preferred compounds include imidazole structure, diazabicyclo structure, onium hydroxide structure, onium carboxylate Examples thereof include a compound having a structure, a trialkylamine structure, an aniline structure or a pyridine structure, an alkylamine derivative having a hydroxyl group and / or an ether bond, and an aniline derivative having a hydroxyl group and / or an ether bond.
More preferable compounds include compounds having an imidazole structure, compounds having a trialkylamine structure, compounds having an aniline structure, alkylamine derivatives having a hydroxyl group and / or an ether bond.

  Examples of the compound having an imidazole structure include imidazole, 2,4,5-triphenylimidazole, benzimidazole, and 2-phenylbenzimidazole. Examples of the compound having a diazabicyclo structure include 1,4-diazabicyclo [2,2,2] octane, 1,5-diazabicyclo [4,3,0] non-5-ene, and 1,8-diazabicyclo [5,4,0. ] Undecar 7-ene etc. are mentioned. Examples of the compound having an onium hydroxide structure include triarylsulfonium hydroxide, phenacylsulfonium hydroxide, sulfonium hydroxide having a 2-oxoalkyl group, specifically triphenylsulfonium hydroxide, tris (t-butylphenyl) sulfonium. Examples thereof include hydroxide, bis (t-butylphenyl) iodonium hydroxide, phenacylthiophenium hydroxide, and 2-oxopropylthiophenium hydroxide. As the compound having an onium carboxylate structure, an anion portion of the compound having an onium hydroxide structure is converted to a carboxylate, and examples thereof include acetate, adamantane-1-carboxylate, and perfluoroalkylcarboxylate. Examples of the compound having a trialkylamine structure include tri (n-butyl) amine, tri (n-octyl) amine, and tri (n-pentyl) amine. Examples of the aniline compound include 2,6-diisopropylaniline, N, N-dimethylaniline, N, N-dibutylaniline, N, N-dihexylaniline and the like. Examples of the alkylamine derivative having a hydroxyl group and / or an ether bond include ethanolamine, diethanolamine, triethanolamine, tris (methoxyethoxyethyl) amine, N-phenyldiethanolamine and the like. Examples of aniline derivatives having a hydroxyl group and / or an ether bond include N, N-bis (hydroxyethyl) aniline.

  Further, at least one nitrogen-containing compound selected from an amine compound having a phenoxy group, an ammonium salt compound having a phenoxy group, an amine compound having a sulfonic acid ester group, and an ammonium salt compound having a sulfonic acid ester group can be exemplified. .

As the amine compound, a primary, secondary or tertiary amine compound can be used, and an amine compound in which at least one alkyl group is bonded to a nitrogen atom is preferable. The amine compound is more preferably a tertiary amine compound. As long as at least one alkyl group (preferably having 1 to 20 carbon atoms) is bonded to a nitrogen atom, the amine compound has an cycloalkyl group (preferably having 3 to 20 carbon atoms) or an aryl group (preferably having 3 to 20 carbon atoms). Preferably C6-C12) may be bonded to a nitrogen atom.
The amine compound preferably has an oxygen atom in the alkyl chain and an oxyalkylene group is formed. The number of oxyalkylene groups is one or more in the molecule, preferably 3 to 9, and more preferably 4 to 6. Among the oxyalkylene groups, an oxyethylene group (—CH ₂ CH ₂ O—) or an oxypropylene group (—CH (CH ₃ ) CH ₂ O— or —CH ₂ CH ₂ CH ₂ O—) is preferable, and more preferably oxy Ethylene group.

As the ammonium salt compound, a primary, secondary, tertiary, or quaternary ammonium salt compound can be used, and an ammonium salt compound in which at least one alkyl group is bonded to a nitrogen atom is preferable. As long as at least one alkyl group (preferably having 1 to 20 carbon atoms) is bonded to a nitrogen atom, the ammonium salt compound has a cycloalkyl group (preferably having 3 to 20 carbon atoms) or an aryl group in addition to the alkyl group. (Preferably having 6 to 12 carbon atoms) may be bonded to a nitrogen atom.
The ammonium salt compound preferably has an oxygen atom in the alkyl chain and an oxyalkylene group is formed. The number of oxyalkylene groups is one or more in the molecule, preferably 3 to 9, and more preferably 4 to 6. Among the oxyalkylene groups, an oxyethylene group (—CH ₂ CH ₂ O—) or an oxypropylene group (—CH (CH ₃ ) CH ₂ O— or —CH ₂ CH ₂ CH ₂ O—) is preferable, and more preferably oxy Ethylene group. Examples of the anion of the ammonium salt compound include halogen atoms, sulfonates, borates, and phosphates. Among them, halogen atoms and sulfonates are preferable. As the halogen atom, chloride, bromide, and iodide are particularly preferable. As the sulfonate, an organic sulfonate having 1 to 20 carbon atoms is particularly preferable. Examples of the organic sulfonate include alkyl sulfonates having 1 to 20 carbon atoms and aryl sulfonates. The alkyl group of the alkyl sulfonate may have a substituent, and examples of the substituent include fluorine, chlorine, bromine, alkoxy groups, acyl groups, and aryl groups. Specific examples of the alkyl sulfonate include methane sulfonate, ethane sulfonate, butane sulfonate, hexane sulfonate, octane sulfonate, benzyl sulfonate, trifluoromethane sulfonate, pentafluoroethane sulfonate, and nonafluorobutane sulfonate. Examples of the aryl group of the aryl sulfonate include a benzene ring, a naphthalene ring, and an anthracene ring. The benzene ring, naphthalene ring and anthracene ring may have a substituent, and the substituent is preferably a linear or branched alkyl group having 1 to 6 carbon atoms or a cycloalkyl group having 3 to 6 carbon atoms. Specific examples of the linear or branched alkyl group and cycloalkyl group include methyl, ethyl, n-propyl, isopropyl, n-butyl, i-butyl, t-butyl, n-hexyl, cyclohexyl and the like. Examples of the other substituent include an alkoxy group having 1 to 6 carbon atoms, a halogen atom, cyano, nitro, an acyl group, and an acyloxy group.

  The amine compound having a phenoxy group and the ammonium salt compound having a phenoxy group are those having a phenoxy group at the terminal opposite to the nitrogen atom of the alkyl group of the amine compound or ammonium salt compound. The phenoxy group may have a substituent. Examples of the substituent of the phenoxy group include an alkyl group, an alkoxy group, a halogen atom, a cyano group, a nitro group, a carboxyl group, a carboxylic acid ester group, a sulfonic acid ester group, an aryl group, an aralkyl group, an acyloxy group, and an aryloxy group. Etc. The substitution position of the substituent may be any of the 2-6 positions. The number of substituents may be any in the range of 1 to 5.

It is preferable to have at least one oxyalkylene group between the phenoxy group and the nitrogen atom. The number of oxyalkylene groups is one or more in the molecule, preferably 3 to 9, and more preferably 4 to 6. Among the oxyalkylene groups, an oxyethylene group (—CH ₂ CH ₂ O—) or an oxypropylene group (—CH (CH ₃ ) CH ₂ O— or —CH ₂ CH ₂ CH ₂ O—) is preferable, and more preferably oxy Ethylene group.

  In the amine compound having a sulfonic acid ester group and the ammonium salt compound having a sulfonic acid ester group, the sulfonic acid ester group may be any of alkyl sulfonic acid ester, cycloalkyl group sulfonic acid ester, and aryl sulfonic acid ester. In the case of an alkyl sulfonate ester, the alkyl group has 1 to 20 carbon atoms. In the case of a cycloalkyl sulfonate ester, the cycloalkyl group has 3 to 20 carbon atoms. In the case of an aryl sulfonate ester, the aryl group has 6 carbon atoms. ~ 12 are preferred. Alkyl sulfonic acid ester, cycloalkyl sulfonic acid ester, and aryl sulfonic acid ester may have a substituent. Examples of the substituent include a halogen atom, a cyano group, a nitro group, a carboxyl group, a carboxylic acid ester group, and a sulfonic acid. An ester group is preferred.

It is preferable to have at least one oxyalkylene group between the sulfonate group and the nitrogen atom. The number of oxyalkylene groups is one or more in the molecule, preferably 3 to 9, and more preferably 4 to 6. Among the oxyalkylene groups, an oxyethylene group (—CH ₂ CH ₂ O—) or an oxypropylene group (—CH (CH ₃ ) CH ₂ O— or —CH ₂ CH ₂ CH ₂ O—) is preferable, and more preferably oxy Ethylene group.

The amine compound having a phenoxy group is prepared by reacting a primary or secondary amine having a phenoxy group with a haloalkyl ether by heating, and then adding an aqueous solution of a strong base such as sodium hydroxide, potassium hydroxide or tetraalkylammonium. It can be obtained by extraction with an organic solvent such as ethyl acetate or chloroform. Alternatively, after reacting by heating a primary or secondary amine and a haloalkyl ether having a phenoxy group at the end, an aqueous solution of a strong base such as sodium hydroxide, potassium hydroxide, or tetraalkylammonium is added, and then ethyl acetate, It can be obtained by extraction with an organic solvent such as chloroform.
These basic compounds are used alone or in combination of two or more.

  The usage-amount of a basic compound is 0.001-10 mass% normally on the basis of solid content of a negative resist composition, Preferably it is 0.01-5 mass%.

  The use ratio of the compound (A) and the basic compound in the composition is preferably compound (A) / basic compound (molar ratio) = 2.5 to 300. In other words, the molar ratio is preferably 2.5 or more from the viewpoint of sensitivity and resolution, and is preferably 300 or less from the viewpoint of suppressing the reduction in resolution due to the thickening of the resist pattern over time until post-exposure heat treatment. The compound (A) / basic compound (molar ratio) is more preferably 5.0 to 200, still more preferably 7.0 to 150.

Fluorine-based and / or silicon-based surfactant The negative resist composition of the present invention preferably further contains a surfactant, and a fluorine-based and / or silicon-based surfactant (fluorine-based surfactant, silicon-based surfactant). It is more preferable to contain any one of surfactants, surfactants having both fluorine atoms and silicon atoms, or two or more thereof.

When the negative resist composition of the present invention contains the above-described surfactant, a resist pattern with less adhesion and development defects can be obtained with good sensitivity and resolution when using an exposure light source of 250 nm or less, particularly 220 nm or less. It becomes possible.
Examples of the fluorine-based and / or silicon-based surfactant include, for example, JP-A-62-36663, JP-A-61-226746, JP-A-61-226745, JP-A-62.
JP-A-170950, JP-A-63-34540, JP-A-7-230165, JP-A-8-62834, JP-A-9-54432, JP-A-9-5988, JP-A-2002- No. 277862, U.S. Pat.Nos. 5,405,720, 5,360,692, 5,529,881, 5,296,330, 5,436,098, 5,576,143, 5,294,511, 5,824,451 The surfactants described in the specification can be mentioned, and the following commercially available surfactants can also be used as they are.

Examples of commercially available surfactants that can be used include F-top EF301, EF303 (manufactured by Shin-Akita Kasei Co., Ltd.), Florard FC430, 431, 4430 (manufactured by Sumitomo 3M Co., Ltd.),
Megafuck F171, F173, F176, F189, F113, F110, F177, F120, R08 (manufactured by Dainippon Ink and Chemicals), Surflon S-382, SC101, 102, 103, 104, 105, 106 (Asahi Glass ( Co., Ltd.), Troisol S-366 (manufactured by Troy Chemical Co., Ltd.), GF-300, GF-150 (manufactured by Toagosei Co., Ltd.), Surflon S-393 (manufactured by Seimi Chemical Co., Ltd.), F-top EF121, EF122A, EF122B, RF122C, EF125M, EF135M, EF351, 352, EF801, EF802, EF601 (manufactured by Gemco), PF636, PF656, PF6320, PF6520 (manufactured by OMNOVA), FTX-204D, 208, 230G, 204 , Mention may be made of 208D, 212D, the fluorine-based surfactant or silicone-based surfactants such as 218D and 222D ((KK) Neos). Polysiloxane polymer KP-341 (manufactured by Shin-Etsu Chemical Co., Ltd.) can also be used as a silicon-based surfactant.

In addition to the known surfactants described above, the surfactant is derived from a fluoroaliphatic compound produced by a telomerization method (also called telomer method) or an oligomerization method (also called oligomer method). A surfactant using a polymer having a fluoroaliphatic group can be used. The fluoroaliphatic compound can be synthesized by the method described in JP-A-2002-90991.
As the polymer having a fluoroaliphatic group, a copolymer of a monomer having a fluoroaliphatic group and (poly (oxyalkylene)) acrylate and / or (poly (oxyalkylene)) methacrylate is preferable and distributed irregularly. Or may be block copolymerized. Examples of the poly (oxyalkylene) group include a poly (oxyethylene) group, a poly (oxypropylene) group, a poly (oxybutylene) group, and the like, and a poly (oxyethylene, oxypropylene, and oxyethylene group). A unit having different chain lengths in the same chain length, such as a block link) or poly (block link of oxyethylene and oxypropylene) may be used. Furthermore, a copolymer of a monomer having a fluoroaliphatic group and (poly (oxyalkylene)) acrylate (or methacrylate) is not only a binary copolymer but also a monomer having two or more different fluoroaliphatic groups, Further, it may be a ternary or higher copolymer obtained by simultaneously copolymerizing two or more different (poly (oxyalkylene)) acrylates (or methacrylates).

Examples of commercially available surfactants include Megafac F178, F-470, F-473, F-475, F-476, and F-472 (Dainippon Ink Chemical Co., Ltd.). Further, a copolymer of an acrylate (or methacrylate) having a C ₆ F ₁₃ group and (poly (oxyalkylene)) acrylate (or methacrylate), an acrylate (or methacrylate) having a C ₃ F ₇ group and (poly (oxy) And a copolymer of (ethylene)) acrylate (or methacrylate) and (poly (oxypropylene)) acrylate (or methacrylate).

In the present invention, other surfactants other than fluorine-based and / or silicon-based surfactants can also be used. Specifically, polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether, polyoxyethylene alkyl ethers such as polyoxyethylene oleyl ether, polyoxyethylene octylphenol ether, polyoxyethylene nonylphenol ether, etc. Sorbitans such as polyoxyethylene alkyl allyl ethers, polyoxyethylene / polyoxypropylene block copolymers, sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, sorbitan monooleate, sorbitan trioleate, sorbitan tristearate Fatty acid esters, polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monopal Te - DOO, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan trioleate, may be mentioned polyoxyethylene sorbitan tristearate nonionic surfactants of polyoxyethylene sorbitan fatty acid esters such as such.

  These surfactants may be used alone or in several combinations.

  The amount of the surfactant used is preferably 0.01 to 10% by mass, more preferably 0.1 to 5% by mass, based on the total amount of the negative resist composition (excluding the solvent).

Organic Solvent The negative resist composition of the present invention is used by dissolving the above components in a predetermined organic solvent.
Examples of the organic solvent that can be used include ethylene dichloride, cyclohexanone, cyclopentanone, 2-heptanone, γ-butyrolactone, methyl ethyl ketone, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, 2-methoxyethyl acetate, ethylene glycol monoethyl. Ether acetate, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, toluene, ethyl acetate, methyl lactate, ethyl lactate, methyl methoxypropionate, ethyl ethoxypropionate, methyl pyruvate, ethyl pyruvate, propyl pyruvate, N, N -Dimethylformamide, dimethylsulfoxide, N-methylpyrrolidone, methoxybutanol, tetrahydrofuran, etc. It can be mentioned.

  In this invention, you may use the mixed solvent which mixed the solvent which has a hydroxyl group in a structure, and the solvent which does not have a hydroxyl group as an organic solvent.

  Examples of the solvent having a hydroxyl group include ethylene glycol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol, propylene glycol monomethyl ether, propylene glycol monoethyl ether, ethyl lactate, and the like. Propylene glycol monomethyl ether and ethyl lactate are preferred.

Examples of the solvent having no hydroxyl group include propylene glycol monomethyl ether acetate, ethyl ethoxypropionate, 2-heptanone, γ-butyrolactone, cyclohexanone, butyl acetate, N-methylpyrrolidone, N, N-dimethylacetamide, dimethyl sulfoxide. Among these, propylene glycol monomethyl ether acetate, ethyl ethoxypropionate, 2-heptanone, γ-butyrolactone, cyclohexanone, and butyl acetate are preferable, propylene glycol monomethyl ether acetate, ethyl ethoxypropionate 2-heptanone is more preferable.
The mixing ratio (mass ratio) of the solvent having a hydroxyl group and the solvent having no hydroxyl group is preferably 1/99 to 99/1, more preferably 10/90 to 90/10, and even more preferably 20/80 to 60/40. A mixed solvent containing 50% by mass or more of a solvent having no hydroxyl group is particularly preferable from the viewpoint of coating uniformity.

Method of Use The negative resist composition of the present invention is preferably used at a film thickness of 30 to 250 nm, more preferably at a film thickness of 30 to 200 nm, from the viewpoint of improving resolution. Such a film thickness can be obtained by setting the solid content concentration in the negative resist composition to an appropriate range to give an appropriate viscosity and improving the coating property and film forming property.

  The total solid content concentration in the negative resist composition is generally 1 to 10% by mass, more preferably 1 to 8% by mass, and further preferably 1 to 6% by mass.

  The negative resist composition of the present invention is used by dissolving the above components in a predetermined organic solvent, preferably the mixed solvent, filtering the solution, and then applying the solution on a predetermined support as follows. The filter used for filter filtration is generally 0.1 micron or less, more preferably 0.05 micron or less, and still more preferably 0.03 micron or less made of polytetrafluoroethylene, polyethylene, or nylon.

For example, a negative resist composition is applied onto a substrate (eg, silicon / silicon dioxide coating) used for manufacturing a precision integrated circuit element by an appropriate application method such as a spinner or a coater, and dried to form a resist film. Form.
The resist film is irradiated with actinic rays or radiation through a predetermined mask, heated, developed and rinsed.

Examples of the actinic ray or radiation include infrared light, visible light, ultraviolet light, far ultraviolet light, X-ray, electron beam, etc., preferably 250 nm or less, more preferably 220 nm or less, particularly preferably 1 to 1. Far ultraviolet light having a wavelength of 200 nm, specifically, KrF excimer laser (248 nm), ArF excimer laser (193 nm), F ₂ excimer laser (157 nm), EUV (13 nm), X-ray, electron beam, etc., preferably Are ArF excimer laser, F ₂ excimer laser, EUV (13 nm), and electron beam, and ArF excimer laser (193 nm) is particularly preferable.

In the present invention, it is preferable to heat after exposure.
The heating temperature after exposure is more preferably 60 to 150 ° C, still more preferably 70 to 140 ° C, and particularly preferably 80 to 145 ° C.

Before forming the resist film, an antireflection film may be coated on the substrate in advance.
As the antireflection film, any of an inorganic film type such as titanium, titanium dioxide, titanium nitride, chromium oxide, carbon, and amorphous silicon, and an organic film type made of a light absorber and a polymer material can be used. In addition, as the organic antireflection film, commercially available organic antireflection films such as DUV30 series, DUV-40 series manufactured by Brewer Science, AR-2, AR-3, AR-5 manufactured by Shipley are also used. it can.

  Exposure (immersion exposure) may be performed by filling a liquid (immersion medium) having a higher refractive index than air between the resist film and the lens during irradiation with actinic rays or radiation. Thereby, resolution can be improved. As the immersion medium to be used, any liquid can be used as long as it has a higher refractive index than air, but pure water is preferred.

The immersion liquid used for the immersion exposure will be described below.
The immersion liquid is preferably a liquid that is transparent to the exposure wavelength and has a refractive index temperature coefficient as small as possible so as to minimize distortion of the optical image projected onto the resist film. Is an ArF excimer laser (wavelength; 193 nm), it is preferable to use water from the viewpoints of availability and ease of handling in addition to the above-mentioned viewpoints.
Further, a medium having a refractive index of 1.5 or more can be used in that the refractive index can be further improved. This medium may be an aqueous solution or an organic solvent.

  When water is used as the immersion liquid, the surface tension of the water is decreased and the surface activity is increased, so that the resist film on the wafer is not dissolved and the influence on the optical coating on the lower surface of the lens element can be ignored. An additive (liquid) may be added in a small proportion. The additive is preferably an aliphatic alcohol having a refractive index substantially equal to that of water, and specifically includes methyl alcohol, ethyl alcohol, isopropyl alcohol and the like. By adding an alcohol having a refractive index substantially equal to that of water, even if the alcohol component in water evaporates and the content concentration changes, an advantage that the change in the refractive index of the entire liquid can be made extremely small can be obtained. On the other hand, when an opaque material or impurities whose refractive index is significantly different from that of water are mixed with 193 nm light, the optical image projected on the resist film is distorted. . Further, pure water filtered through an ion exchange filter or the like may be used.

The electrical resistance of water is desirably 18.3 MQcm or more, the TOC (organic substance concentration) is desirably 20 ppb or less, and deaeration treatment is desirably performed.
Moreover, it is possible to improve lithography performance by increasing the refractive index of the immersion liquid. From such a viewpoint, an additive for increasing the refractive index may be added to water, or heavy water (D ₂ O) may be used instead of water.

  When the resist film made of the negative resist composition of the present invention is exposed through an immersion medium, a hydrophobic resin (HR) can be further added as necessary. As a result, hydrophobic resin (HR) is unevenly distributed on the surface of the resist film, and when the immersion medium is water, the receding contact angle of the resist film surface with respect to the water when the resist film is formed is improved, and the immersion water tracking is improved. Can be made. As the hydrophobic resin (HR), any resin can be used as long as the receding contact angle of the surface can be improved by addition, but a resin having at least one of fluorine atom and silicon atom is preferable. The receding contact angle of the resist film is preferably 60 ° to 90 °, more preferably 70 ° or more. The addition amount can be adjusted as appropriate so that the receding contact angle of the resist film falls within the above range, but is preferably 0.1 to 10% by mass based on the total solid content of the negative resist composition, More preferably, it is 0.1-5 mass%. Hydrophobic resin (HR) is ubiquitous at the interface as described above, but unlike a surfactant, it does not necessarily have a hydrophilic group in the molecule, and polar / nonpolar substances are mixed uniformly. There is no need to contribute.

  The fluorine atom or silicon atom in the hydrophobic resin (HR) may be contained in the main chain of the resin or may be substituted on the side chain.

The hydrophobic resin (HR) is preferably a resin having an alkyl group having a fluorine atom, a cycloalkyl group having a fluorine atom, or an aryl group having a fluorine atom as a partial structure having a fluorine atom.
The alkyl group having a fluorine atom (preferably having 1 to 10 carbon atoms, more preferably 1 to 4 carbon atoms) is a linear or branched alkyl group in which at least one hydrogen atom is substituted with a fluorine atom, It may have a substituent.
The cycloalkyl group having a fluorine atom is a monocyclic or polycyclic cycloalkyl group in which at least one hydrogen atom is substituted with a fluorine atom, and may further have another substituent.
Examples of the aryl group having a fluorine atom include those in which at least one hydrogen atom of an aryl group such as a phenyl group or a naphthyl group is substituted with a fluorine atom, and may further have another substituent.

  Preferred examples of the alkyl group having a fluorine atom, the cycloalkyl group having a fluorine atom, or the aryl group having a fluorine atom include groups represented by the following general formulas (F2) to (F4). The present invention is not limited to this.

In general formulas (F2) to (F4),
R _{57 to} R ₆₈ each independently represents a hydrogen atom, a fluorine atom or an alkyl group. However, at least one of R _{57 to} R ₆₁ , R _{62 to} R ₆₄ and R _{65 to} R ₆₈ is a fluorine atom or an alkyl group in which at least one hydrogen atom is substituted with a fluorine atom (preferably having a carbon number of 1 ~ 4). R _{57 to} R ₆₁ and R _{65 to} R ₆₇ are preferably all fluorine atoms. R ₆₂ , R ₆₃ and R ₆₈ are preferably an alkyl group (preferably having 1 to 4 carbon atoms) in which at least one hydrogen atom is substituted with a fluorine atom, and preferably a perfluoroalkyl group having 1 to 4 carbon atoms. Further preferred. R ₆₂ and R ₆₃ may be connected to each other to form a ring.

Specific examples of the group represented by the general formula (F2) include a p-fluorophenyl group, a pentafluorophenyl group, and a 3,5-di (trifluoromethyl) phenyl group.
Specific examples of the group represented by the general formula (F3) include trifluoromethyl group, pentafluoropropyl group, pentafluoroethyl group, heptafluorobutyl group, hexafluoroisopropyl group, heptafluoroisopropyl group, hexafluoro (2 -Methyl) isopropyl group, nonafluorobutyl group, octafluoroisobutyl group, nonafluorohexyl group, nonafluoro-t-butyl group, perfluoroisopentyl group, perfluorooctyl group, perfluoro (trimethyl) hexyl group, 2,2 1,3,3-tetrafluorocyclobutyl group, perfluorocyclohexyl group and the like. Hexafluoroisopropyl group, heptafluoroisopropyl group, hexafluoro (2-methyl) isopropyl group, octafluoroisobutyl group, nonafluoro-t-butyl group and perfluoroisopentyl group are preferable, and hexafluoroisopropyl group and heptafluoroisopropyl group are preferable. Further preferred.
Specific examples of the group represented by the general formula (F4) include, for example, —C (CF ₃ ) ₂ OH, —C (C ₂ F ₅ ) ₂ OH, —C (CF ₃ ) (CH ₃ ) OH, -CH (CF ₃₎ OH and the like, -C (CF _{3) 2} OH is preferred.

Hereinafter, although the specific example of the repeating unit which has a fluorine atom is shown, this invention is not limited to this.
In specific examples, X ₁ represents a hydrogen atom, —CH ₃ , —F or —CF ₃ .
X ₂ represents —F or —CF ₃ .

The hydrophobic resin (HR) is preferably a resin having an alkylsilyl structure (preferably a trialkylsilyl group) or a cyclic siloxane structure as a partial structure having a silicon atom.
Specific examples of the alkylsilyl structure or the cyclic siloxane structure include groups represented by the following general formulas (CS-1) to (CS-3).

In general formulas (CS-1) to (CS-3),
R _{12 to} R ₂₆ each independently represents a linear or branched alkyl group (preferably having 1 to 20 carbon atoms) or a cycloalkyl group (preferably having 3 to 20 carbon atoms).
L < ₃ > -L < ₅ > represents a single bond or a bivalent coupling group. As the divalent linking group, an alkylene group, a phenyl group, an ether group, a thioether group, a carbonyl group, an ester group, an amide group, a urethane group, or a urea group is used alone or in combination of two or more groups. A combination is mentioned.
n represents an integer of 1 to 5.

Hereinafter, although the specific example of the repeating unit which has a silicon atom is given, this invention is not limited to this.
In specific examples, X ₁ represents a hydrogen atom, —CH ₃ , —F or —CF ₃ .

Furthermore, the hydrophobic resin (HR) may have at least one group selected from the following groups (x) to (z).
(X) an alkali-soluble group,
(Y) a group that decomposes by the action of an alkali developer and increases the solubility in the alkali developer;
(Z) A group that decomposes by the action of an acid.

(X) Alkali-soluble groups include phenolic hydroxyl groups, carboxylic acid groups, fluorinated alcohol groups, sulfonic acid groups, sulfonamido groups, sulfonylimide groups, (alkylsulfonyl) (alkylcarbonyl) methylene groups, (alkylsulfonyl) ( Alkylcarbonyl) imide group, bis (alkylcarbonyl) methylene group, bis (alkylcarbonyl) imide group, bis (alkylsulfonyl) methylene group, bis (alkylsulfonyl) imide group, tris (alkylcarbonyl) methylene group, tris (alkylsulfonyl) And a group having a methylene group.
Preferred alkali-soluble groups include fluorinated alcohol groups (preferably hexafluoroisopropanol), sulfonimide groups, and bis (carbonyl) methylene groups.

Examples of the repeating unit having an alkali-soluble group (x) include a repeating unit in which an alkali-soluble group is directly bonded to the main chain of the resin, such as a repeating unit of acrylic acid or methacrylic acid, or a main group of the resin via a linking group. It is preferable to use a repeating unit in which an alkali-soluble group is bonded to the chain, and further introduce a polymerization initiator or chain transfer agent having an alkali-soluble group at the end of the polymer chain at the time of polymerization.
The content of the repeating unit having an alkali-soluble group (x) is preferably from 1 to 50 mol%, more preferably from 3 to 35 mol%, still more preferably from 5 to 20 mol%, based on all repeating units in the polymer.

  Specific examples of the repeating unit having an alkali-soluble group (x) are shown below, but the present invention is not limited thereto.

(Y) Examples of the group that decomposes by the action of an alkali developer and increases the solubility in the alkali developer include a group having a lactone structure, an acid anhydride, an acid imide group, and the like, and preferably a lactone group It is.
As the repeating unit having a group (y) that is decomposed by the action of an alkali developer and increases the solubility in the alkali developer, an alkali is added to the main chain of the resin, such as a repeating unit of an acrylate ester or a methacrylate ester. A polymerization initiator having a repeating unit to which a group (y) that decomposes by the action of the developer and increases the solubility in an alkali developer is bonded, or a group (y) that increases the solubility in an alkali developer And a chain transfer agent used at the time of polymerization are preferably introduced at the end of the polymer chain.
The content of the repeating unit having a group (y) whose solubility in an alkali developer is increased is preferably 1 to 40 mol%, more preferably 3 to 30 mol%, still more preferably based on all repeating units in the polymer. 5 to 15 mol%.

  Specific examples of the repeating unit having a group (y) that increases the solubility in an alkali developer include the same repeating units as those having a lactone structure exemplified for the resin of the component (A).

  In the hydrophobic resin (HR), examples of the repeating unit having a group (z) that is decomposed by the action of an acid are the same as the repeating unit having an acid-decomposable group listed for the resin of the component (A). . In the hydrophobic resin (HR), the content of the repeating unit having a group (z) that is decomposed by the action of an acid is preferably 1 to 80 mol%, more preferably 10 to 10%, based on all repeating units in the polymer. 80 mol%, more preferably 20 to 60 mol%.

  The hydrophobic resin (HR) may further have a repeating unit represented by the following general formula (III).

In general formula (III):
R ₄ represents a group having an alkyl group, a cycloalkyl group, an alkenyl group, or a cycloalkenyl group.
L ₆ represents a single bond or a divalent linking group.

In general formula (III), the alkyl group represented by R ₄ is preferably a linear or branched alkyl group having 3 to 20 carbon atoms.
The cycloalkyl group is preferably a cycloalkyl group having 3 to 20 carbon atoms.
The alkenyl group is preferably an alkenyl group having 3 to 20 carbon atoms.
The cycloalkenyl group is preferably a cycloalkenyl group having 3 to 20 carbon atoms.
The divalent linking group of L ₆ is preferably an alkylene group (preferably having 1 to 5 carbon atoms) or an oxy group.

When the hydrophobic resin (HR) has a fluorine atom, the fluorine atom content is preferably 5 to 80% by mass, and 10 to 80% by mass with respect to the molecular weight of the hydrophobic resin (HR). Is more preferable. Moreover, the repeating unit containing a fluorine atom is 1 in hydrophobic resin (HR).
It is preferably 0 to 100% by mass, and more preferably 30 to 100% by mass.
When the hydrophobic resin (HR) has a silicon atom, the content of the silicon atom is preferably 2 to 50% by mass and preferably 2 to 30% by mass with respect to the molecular weight of the hydrophobic resin (HR). Is more preferable. Moreover, it is preferable that it is 10-100 mass% in hydrophobic resin (HR), and, as for the repeating unit containing a silicon atom, it is more preferable that it is 20-100 mass%.

The weight average molecular weight of the hydrophobic resin (HR) in terms of standard polystyrene is preferably 1,000 to 100,000, more preferably 1,000 to 50,000, and even more preferably 2,000 to 15,000. is there.
As for the hydrophobic resin (HR), it is preferable that the residual monomer and oligomer components are 0 to 10% by mass, more preferably, as in the resin of the component (B), there are few impurities such as metals. Is more preferably 0 to 5% by mass and 0 to 1% by mass. Thereby, a resist having no change over time such as foreign matter in liquid or sensitivity can be obtained. The molecular weight distribution (Mw / Mn, also referred to as dispersity) is preferably in the range of 1 to 5, more preferably 1 to 3, and still more preferably from the viewpoints of resolution, resist shape, resist pattern sidewall, roughness, and the like. It is the range of 1-2.

  As the hydrophobic resin (HR), various commercially available products can be used, or they can be synthesized according to a conventional method (for example, radical polymerization). For example, as a general synthesis method, a monomer polymerization method in which a monomer species and an initiator are dissolved in a solvent and the polymerization is performed by heating, and a solution of the monomer species and the initiator is dropped into the heating solvent over 1 to 10 hours. The dropping polymerization method is added, and the dropping polymerization method is preferable. Examples of the reaction solvent include ethers such as tetrahydrofuran, 1,4-dioxane, diisopropyl ether, ketones such as methyl ethyl ketone and methyl isobutyl ketone, ester solvents such as ethyl acetate, amide solvents such as dimethylformamide and dimethylacetamide, Furthermore, the solvent which melt | dissolves the composition of this invention like the below-mentioned propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, and cyclohexanone is mentioned. More preferably, the polymerization is performed using the same solvent as the solvent used in the negative resist composition of the present invention. Thereby, generation | occurrence | production of the particle at the time of a preservation | save can be suppressed.

  The polymerization reaction is preferably performed in an inert gas atmosphere such as nitrogen or argon. As a polymerization initiator, a commercially available radical initiator (azo initiator, peroxide, etc.) is used to initiate the polymerization. As the radical initiator, an azo initiator is preferable, and an azo initiator having an ester group, a cyano group, or a carboxyl group is preferable. Preferred examples of the initiator include azobisisobutyronitrile, azobisdimethylvaleronitrile, dimethyl 2,2′-azobis (2-methylpropionate) and the like. The concentration of the reaction is 5 to 50% by mass, preferably 30 to 50% by mass. The reaction temperature is usually 10 ° C to 150 ° C, preferably 30 ° C to 120 ° C, more preferably 60-100 ° C.

  After completion of the reaction, the mixture is allowed to cool to room temperature and purified. Purification can be accomplished by a liquid-liquid extraction method that removes residual monomers and oligomer components by combining water and an appropriate solvent, and a purification method in a solution state such as ultrafiltration that extracts and removes only those having a specific molecular weight or less. , Reprecipitation method that removes residual monomer by coagulating resin in poor solvent by dripping resin solution into poor solvent and purification in solid state such as washing filtered resin slurry with poor solvent A normal method such as a method can be applied. For example, the resin is precipitated as a solid by contacting a solvent (poor solvent) in which the resin is hardly soluble or insoluble in a volume amount of 10 times or less, preferably 10 to 5 times that of the reaction solution.

The solvent (precipitation or reprecipitation solvent) used in the precipitation or reprecipitation operation from the polymer solution may be a poor solvent for the polymer, and may be a hydrocarbon, halogenated hydrocarbon, nitro, depending on the type of polymer. A compound, ether, ketone, ester, carbonate, alcohol, carboxylic acid, water, a mixed solvent containing these solvents, and the like can be appropriately selected for use. Among these, as a precipitation or reprecipitation solvent, a solvent containing at least an alcohol (particularly methanol or the like) or water is preferable.

  The amount of the precipitation or reprecipitation solvent used can be appropriately selected in consideration of efficiency, yield, and the like, but generally 100 to 10000 parts by mass, preferably 200 to 2000 parts by mass with respect to 100 parts by mass of the polymer solution, More preferably, it is 300-1000 mass parts.

  The temperature for precipitation or reprecipitation can be appropriately selected in consideration of efficiency and operability, but is usually about 0 to 50 ° C., preferably around room temperature (for example, about 20 to 35 ° C.). The precipitation or reprecipitation operation can be performed by a known method such as a batch method or a continuous method using a conventional mixing vessel such as a stirring tank.

  The precipitated or re-precipitated polymer is usually subjected to conventional solid-liquid separation such as filtration and centrifugation, and dried before use. Filtration is performed using a solvent-resistant filter medium, preferably under pressure. Drying is performed at a temperature of about 30 to 100 ° C., preferably about 30 to 50 ° C. under normal pressure or reduced pressure (preferably under reduced pressure).

  The resin may be once deposited and separated, and then dissolved again in a solvent, and the resin may be brought into contact with a hardly soluble or insoluble solvent. That is, after completion of the radical polymerization reaction, a solvent in which the polymer is hardly soluble or insoluble is brought into contact, the resin is precipitated (step a), the resin is separated from the solution (step b), and dissolved again in the solvent. (Step c), and then contact the resin solution A with a solvent in which the resin is hardly soluble or insoluble in a volume amount less than 10 times that of the resin solution A (preferably 5 times or less volume). This may be a method including precipitating a resin solid (step d) and separating the precipitated resin (step e).

  Specific examples of the hydrophobic resin (HR) are shown below. Table 1 below shows the molar ratio of repeating units in each resin (corresponding to each repeating unit in order from the left), the weight average molecular weight, and the degree of dispersion.

In order to prevent the resist film from directly contacting the immersion liquid between the resist film made of the negative resist composition of the present invention and the immersion liquid, the immersion liquid hardly soluble film (hereinafter also referred to as “top coat”). ) May be provided. The necessary functions for the top coat are suitability for application to the upper layer of the resist, radiation, especially transparency to 193 nm, and poor immersion liquid solubility. It is preferable that the top coat is not mixed with the resist and can be uniformly applied to the resist upper layer.
From the viewpoint of 193 nm transparency, the top coat is preferably a polymer that does not contain abundant aromatics. Specifically, the polymer contains a hydrocarbon polymer, an acrylate polymer, polymethacrylic acid, polyacrylic acid, polyvinyl ether, and silicon. Examples thereof include a polymer and a fluorine-containing polymer. The aforementioned hydrophobic resin (HR) is also suitable as a top coat. From the viewpoint of contaminating the optical lens when impurities are eluted from the top coat into the immersion liquid, it is preferable that the residual monomer component of the polymer contained in the top coat is small.

When peeling the top coat, a developer may be used, or a separate release agent may be used. As the release agent, a solvent having a small penetration into the resist film is preferable. It is preferable that the peeling process can be performed with an alkali developer in that the peeling process can be performed simultaneously with the resist film development process. From the viewpoint of peeling with an alkaline developer, the topcoat is preferably acidic, but may be neutral or alkaline from the viewpoint of non-intermixability with the resist film.
The resolution is improved when there is no difference in refractive index between the top coat and the immersion liquid. In the case of using water as the immersion liquid in an ArF excimer laser (wavelength: 193 nm), the top coat for ArF immersion exposure is preferably close to the refractive index of the immersion liquid. From the viewpoint of making the refractive index close to the immersion liquid, it is preferable to have fluorine atoms in the topcoat. A thin film is more preferable from the viewpoint of transparency and refractive index.

  The top coat is preferably not mixed with the resist film and further not mixed with the immersion liquid. From this viewpoint, when the immersion liquid is water, it is preferable that the solvent used for the top coat is a slightly water-insoluble medium that is hardly soluble in the solvent used for the negative resist composition. Furthermore, when the immersion liquid is an organic solvent, the topcoat may be water-soluble or water-insoluble.

The negative resist composition of the present invention may be applied to a multilayer resist process (particularly a three-layer resist process). The multilayer resist method includes the following processes.
(A) A lower resist layer made of an organic material is formed on a substrate to be processed.
(B) On the lower resist layer, an intermediate layer and an upper resist layer made of an organic material that crosslinks or decomposes upon irradiation with radiation are sequentially laminated.
(c) After forming a predetermined pattern in the upper resist layer, the intermediate layer, the lower layer and the substrate are sequentially etched.
As the intermediate layer, organopolysiloxane (silicone resin) or SiO ₂ is generally used.
A coating solution (SOG) is used. As the lower layer resist, an appropriate organic polymer film is used, but various known photoresists may be used. For example, each series of the Fuji Film Arch FH series, FHi series, or Sumitomo Chemical PFI series can be illustrated.
The film thickness of the lower resist layer is preferably 0.1 to 4.0 μm, more preferably 0.2 to 2.0 μm, and particularly preferably 0.25 to 1.5 μm. A thickness of 0.1 μm or more is preferable from the viewpoint of antireflection and dry etching resistance, and a thickness of 4.0 μm or less is preferable from the viewpoint of aspect ratio and pattern collapse of the formed fine pattern.

In the development step, an alkaline developer is used as follows. Examples of the alkali developing solution for the negative resist composition include sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, aqueous ammonia and other primary alkalis, and primary amines such as ethylamine and n-propylamine. Secondary amines such as diethylamine and di-n-butylamine, tertiary amines such as triethylamine and methyldiethylamine, alcohol amines such as dimethylethanolamine and triethanolamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide Alkaline aqueous solutions of cyclic amines such as quaternary ammonium salts such as pyrrole and pihelidine can be used.
Furthermore, alcohols and surfactants can be added in appropriate amounts to the alkaline developer.
The alkali concentration of the alkali developer is preferably from 0.1 to 20% by mass.
The pH of the alkaline developer is preferably 10.0 to 15.0.
Furthermore, alcohols and surfactants can be added in appropriate amounts to the alkaline aqueous solution.

  As a developing method, for example, a method in which a substrate is immersed in a tank filled with a developer for a certain period of time (dip method), a method in which the developer is raised on the surface of the substrate by surface tension and is left stationary for a certain time (paddle) Method), a method of spraying the developer on the substrate surface (spray method), a method of continuously applying the developer while scanning the developer application nozzle at a constant speed on a substrate rotating at a constant speed (dynamic dispensing method) ) Etc. can be applied.

As the rinsing liquid, pure water can be used, and an appropriate amount of a surfactant can be added.
Further, after the development process or the rinsing process, a process of removing the developer or the rinsing liquid adhering to the pattern with a supercritical fluid can be performed.

  EXAMPLES Hereinafter, although an Example demonstrates this invention, this invention is not limited to this.

Synthesis Example 1 (Synthesis of monomer (A1))
70.0 g of potassium 3-sulfopropyl methacrylate was placed in a three-necked flask equipped with a calcium chloride tube and cooled to 0 ° C. While stirring this, 87.1 g of phosphorus oxychloride was added dropwise over about 30 minutes. After completion of dropping, the mixture was stirred at room temperature for 9 hours. 700 mL of ethyl acetate was added to the reaction mixture, and this was slowly poured into 700 g of ice water. Extraction was performed using 300 mL of ethyl acetate, and the organic layer was dried using magnesium sulfate, and then the solvent was distilled off using a rotary evaporator to obtain 66.3 g of 3-sulfopropyl chloride methacrylate.
A 39.7 g of 40% aqueous methylamine solution and 30 mL of THF were placed in a three-necked flask and cooled to 0 ° C. To this, 66.3 g of 3-sulfopropyl methacrylate methacrylate obtained above was added dropwise over 1 hour. After completion of dropping, the mixture was stirred at room temperature for 3 hours. To the reaction mixture, 600 mL of 1M HCl aqueous solution was added, extracted with 600 mL of ethyl acetate, the organic layer was dried over magnesium sulfate, and then the solvent was distilled off with a rotary evaporator. The obtained product was purified by column chromatography (ethyl acetate / hexane = 50/50) to obtain 27.4 g of the following monomer (A1).

Synthesis Example 2 (Synthesis of monomer (A2))
29.9 g of 2-aminoethyl methacrylate hydrochloride, 36.6 g of triethylamine and 495 mL of methylene chloride were placed in a three-necked flask and stirred for 1 hour. To this, 22.8 g of methanesulfonyl chloride was added dropwise over 1 hour. After completion of dropping, the mixture was stirred at room temperature for 2 hours. 500 mL of 2M HCl aqueous solution was added to the reaction mixture, and the mixture was extracted with 200 mL of ethyl acetate. The organic layer was dried over magnesium sulfate, and then the solvent was distilled off with a rotary evaporator. The obtained product was purified by column chromatography (ethyl acetate / hexane = 30/70) to obtain 37.2 g of the following monomer (A2).

Synthesis Example 3 (Synthesis of monomer (A3))
1,4-epoxycyclohexane 54.0 g, methanesulfonamide 47.6 g, t-butoxypotassium 5.6 g tetrahydrofuran 600 mL was placed in a three-necked flask and heated to reflux for 11 hours under a nitrogen atmosphere. After returning to room temperature, 500 mL of 1 M HCl aqueous solution was added, extraction was performed with 600 mL of ethyl acetate, the organic layer was dried over magnesium sulfate, dried over magnesium sulfate, and then the solvent was distilled off with a rotary evaporator. The obtained product was purified by column chromatography (ethyl acetate / hexane = 50/50) to obtain 46.1 g of 2-[(methylsulfonyl) amino] cyclohexanol.
2-[(methylsulfonyl) amino] cyclohexanol obtained above, 55.5 g of triethylamine, and 600 mL of acetonitrile are placed in a three-necked flask, and 57.5 g of methacrylic acid chloride is added over 30 minutes at −20 ° C. in a nitrogen atmosphere. It was dripped. After completion of dropping, the mixture was returned to room temperature and stirred for 1 hour. 800 mL of 2M HCl aqueous solution was added to the reaction mixture, extraction was performed with 600 mL of ethyl acetate, the organic layer was dried over magnesium sulfate, and then the solvent was distilled off with a rotary evaporator. The obtained product was purified by column chromatography (ethyl acetate / hexane = 40/60) to obtain 79.8 g of the following monomer (A3).

Synthesis Example 4 (Synthesis of monomer (A4))
10 g of 2-aminoethyl methacrylate and 12.1 g of triethylamine were placed in a three-necked flask and stirred for 1 hour. To this was added dropwise 10.2 g of trifluoromethylmethanesulfonyl chloride over 30 minutes. After completion of the dropwise addition, the mixture was stirred for 10 hours. 150 mL of diisopropyl ether was added to the reaction mixture, and the resulting precipitate was removed by filtration. To the filtrate, 200 mL of 0.5 M HCl was added, washed with 100 mL of an aqueous sodium hydrogen carbonate solution, dried over magnesium sulfate, and then the solvent was distilled off with a rotary evaporator. The product obtained was purified by recrystallization (chloroform / hexane = 50/50) to obtain 6.8 g of the following monomer (A4).

Synthesis Example 5 (Synthesis of Resin (1))
Under a nitrogen stream, 80.7 g of a mixed solvent of PGMEA (propylene glycol monomethyl ether acetate) / PGME (propylene glycol monomethyl ether) (mass ratio 8/2) was placed in a three-necked flask and heated to 80 ° C. To this, 25.7 g of monomer (A2), 11.3 g of 3-hydroxyadamantyl methacrylate, 3.6 g of 2-hydroxyethyl methacrylate, polymerization initiator V-601 (manufactured by Wako Pure Chemical Industries), 12 mol% of PGMEA with respect to the monomer A solution dissolved in 149.7 g of / PGME mixed solvent (mass ratio 8/2) was added dropwise over 6 hours. After completion of dropping, the reaction was further carried out at 80 ° C. for 2 hours. The reaction solution was allowed to cool and then dropped into a mixed solution of hexane 2800 mL / ethyl acetate 1200 mL over 20 minutes, and the precipitated powder was collected by filtration and dried to obtain 28.5 g of white powdery resin (1). . The weight average molecular weight of the obtained resin (1) was 7800 in terms of standard polystyrene, and the dispersity (Mw / Mn) was 1.76.

  Other resins were synthesized in the same manner. Table 2 below shows the repeating units, compositions (molar ratio, corresponding to each repeating unit in order from the left), weight average molecular weight (Mw), and dispersity (Mw / Mn) of the synthesized resins (1) to (14).

Examples 1 to 23 and Comparative Examples 1 to 3
<Resist preparation>
The components shown in Table 3 below were dissolved in a solvent, and a solution with a solid content concentration of 6% by mass was prepared for each, and this was filtered through a polyethylene filter having a pore size of 0.1 μm to prepare a negative resist solution. The prepared negative resist solution was evaluated by the following method, and the results are shown in Table 3 below. In addition, about each component in Table 3, the ratio at the time of using multiple is a mass ratio.

(Exposure condition (1))
An organic antireflection film ARC29A (Nissan Chemical Co., Ltd.) was applied on a silicon wafer and baked at 205 ° C. for 60 seconds to form a 78 nm antireflection film. The prepared negative resist solution was applied thereon and baked at 130 ° C. for 60 seconds to form a 250 nm resist film. The obtained wafer was subjected to pattern exposure using an ArF excimer laser scanner (PAS5500 / 1100, NA0.75, σo / σi = 0.85 / 0.55, manufactured by ASML). Thereafter, heating was performed at 130 ° C. for 60 seconds, followed by development with an aqueous tetramethylammonium hydroxide solution (2.38 mass%) for 30 seconds, rinsing with pure water, and spin drying to obtain a resist pattern.

(Exposure condition (2))
This condition is to form a resist pattern by an immersion exposure method using pure water.
Further, 0.05 g of hydrophobic resin (HR-22) was added to the components shown in Table 3 to prepare a negative resist solution for immersion exposure.
An organic antireflection film ARC29A (Nissan Chemical Co., Ltd.) was applied on a silicon wafer and baked at 205 ° C. for 60 seconds to form a 78 nm antireflection film. A negative resist solution for immersion exposure prepared thereon was applied, and baked at 130 ° C. for 60 seconds to form a 250 nm resist film. The obtained wafer was subjected to pattern exposure using an ArF excimer laser immersion scanner (NA 0.85). Ultra pure water was used as the immersion liquid. Thereafter, heating was performed at 130 ° C. for 60 seconds, followed by development with an aqueous tetramethylammonium hydroxide solution (2.38 mass%) for 30 seconds, rinsing with pure water, and spin drying to obtain a resist pattern.

  In (exposure condition 1) and (exposure condition 2), the pattern shape and defocus latitude were evaluated for the obtained resist pattern.

Pattern shape:
An exposure amount that reproduces a line-and-space 1/1 with a mask size of 130 nm was taken as an optimum exposure amount, and a pattern profile at the optimum exposure amount was observed with a scanning electron microscope (SEM). Evaluation was made as ◎, ○, Δ, × in order of good pattern profile.

Defocus latitude (DOF)
A defocus latitude of 130 nm at an exposure amount that reproduces a 130 nm line and space 1/1 mask pattern was observed. What was not able to be evaluated was set to "-".

  In Table 3, Examples 1 to 18 and Comparative Examples 1 and 3 are evaluated under the exposure condition (1), and Examples 19 to 23 and Comparative Example 2 are evaluated under the exposure condition (2).

[Crosslinking agent]
The crosslinking agent used in Table 3 has the following structure.

  Abbreviations in Table 3 are as follows.

[Basic compounds]
TPI: 2,4,5-triphenylimidazole TPSA: triphenylsulfonium acetate HEP: N-hydroxyethylpiperidine DIA: 2,6-diisopropylaniline DCMA: dicyclohexylmethylamine TPA: tripentylamine HAP: hydroxyantipyrine TBAH: tetrabutyl Ammonium hydroxide TMEA: Tris (methoxyethoxyethyl) amine PEA: N-phenyldiethanolamine TOA: Trioctylamine DBN: 1,5-diazabicyclo [4.3.0] non-5-ene PBI: 2-phenylbenzimidazole
DHA: N, N-dihexylaniline

[Surfactant]
W-1: MegaFuck F176 (Dainippon Ink Chemical Co., Ltd.) (Fluorine)
W-2: Megafuck R08 (Dainippon Ink Chemical Co., Ltd.) (fluorine and silicon)
W-3: Polysiloxane polymer KP-341 (manufactured by Shin-Etsu Chemical Co., Ltd.) (silicon-based)
W-4: Troisol S-366 (manufactured by Troy Chemical Co., Ltd.)
W-5: PF656 (manufactured by OMNOVA, fluorine-based)
W-6: PF6320 (manufactured by OMNOVA, fluorine-based)

〔solvent〕
A1: Propylene glycol monomethyl ether acetate A2: 2-heptanone A3: Cyclohexanone A4: γ-Butyrolactone B1: Propylene glycol monomethyl ether B2: Ethyl lactate B3: Propylene carbonate

  From Table 3, it can be seen that the negative resist composition of the present invention has a good pattern shape and a wide defocus latitude.

Claims (4)

(A) an alkali-soluble resin having a repeating unit having a sulfonamide group represented by the following general formula (SA1) or (SA2), and a repeating unit having a group capable of crosslinking by the action of an acid; A negative resist composition comprising: a compound that crosslinks an alkali-soluble resin by (1); and (C) a compound that generates an acid upon irradiation with actinic rays or radiation.

In general formulas (SA1) and (SA2),
R ^SA represents an alkyl group or a cycloalkyl group .   2. The negative resist composition according to claim 1, wherein the group capable of crosslinking by the action of an acid is a hydroxyl group. Resist film formed by the negative resist composition according to claim 1 or 2. A resist pattern forming method comprising: exposing the resist film according to claim 3; and developing the resist film.