JP5269937B2 - Surface treatment equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a surface treatment apparatus which suppresses by-products from depositing at areas other than a workpiece during surface treatment and efficiently eliminates the deposited by-products while cleaning treatment. <P>SOLUTION: When a raw material liquid used for surface treatment is supplied to a substrate 18 on a cylindrical sample holding base 12 provided in a housing part 10, a partition wall 14 provided around the lateral side of the sample holding base 12 moves to a position where the partition wall 14 covers a side surface of the sample holding base 12. When a cleaning liquid used for cleaning treatment in the housing part 10 is supplied to the substrate 18, the partition wall 14 moves to a position where the partition wall 14 exposes the side surface of the sample holding base 12. <P>COPYRIGHT: (C)2013,JPO&amp;INPIT

Description

  The present invention relates to a surface treatment apparatus that performs surface treatment and cleaning treatment.

  For example, in order to manufacture a semiconductor element or the like, a raw material fluid such as an appropriate reaction gas is supplied onto the substrate to form a semiconductor layer, an insulating film, a conductor layer, or the like on the substrate, or the surface of the substrate is Etching or forming a coating material is performed. Such treatment is widely performed in addition to the manufacture of semiconductor elements, and these treatments can be referred to as surface treatment in a broad sense, and an apparatus that performs this surface treatment can be referred to as a surface treatment device in a broad sense.

  For example, an epitaxial apparatus for epitaxially growing a semiconductor layer on a semiconductor wafer or an insulator wafer, a vapor deposition (CVD) apparatus for depositing an insulating film such as an appropriate oxide film on the semiconductor wafer, or a semiconductor wafer formed on the semiconductor wafer A dry etching apparatus or the like that removes the formed thin film or the like is a surface treatment apparatus in a broad sense.

  Using such a surface treatment apparatus, for example, when performing surface treatment for a long time during mass production of the product, surface treatment is performed at an unnecessary portion (inner wall of the surface treatment apparatus) other than the object to be processed (substrate), By the surface treatment, a by-product may be deposited on the inner wall or the like of the surface treatment apparatus. And this deposit (by-product) peels off and adheres to a to-be-processed object, and there exists a possibility that the problem that the quality of a to-be-processed object may deteriorate arises.

  First, in order to suppress the accumulation of by-products in unnecessary locations during surface treatment, heat applied to the workpiece during surface treatment is transferred to unnecessary locations other than the workpiece. In addition, it is necessary to suppress the diffusibility of the raw material fluid in unnecessary portions.

  For example, in Patent Document 1, a discharge flow for discharging a raw material fluid supplied to an object to be processed is provided between a partition wall provided on a side of a sample holding base installed in a housing portion and an inner wall of the housing portion. A surface treatment apparatus in which a path portion is formed has been proposed. By forming such a discharge flow path portion, the raw material fluid is quickly discharged to the outside without causing disturbance in the housing portion. In addition, when the sample holder is heated, the heat of the sample holder is blocked by the partition wall, and heat transfer to the inner wall of the casing is suppressed. That is, during surface treatment, heat transfer to unnecessary locations other than the object to be processed and fluid diffusibility at the unnecessary locations are suppressed, so that by-products accumulate in the unnecessary locations. It becomes possible to suppress.

  However, when a by-product is deposited in an unnecessary portion by the surface treatment, it is necessary to perform a cleaning process in order to remove such a deposit (by-product) chemically or physically. The cleaning process is a method of removing a deposit by a chemical reaction or the like by bringing a cleaning fluid into contact with the deposit deposited in the casing. In order to efficiently remove deposits by this cleaning process, heat transfer to unnecessary parts other than the object to be processed is improved, or the diffusibility of the cleaning fluid at the unnecessary parts is increased. It is desirable.

  Thus, during surface treatment, the apparatus configuration that can suppress heat transfer to an unnecessary location other than the object to be processed and fluid diffusibility is effective in terms of suppressing deposit accumulation, At the time of the cleaning process, it is desirable to have an apparatus configuration that can improve the heat transfer property and the fluid diffusibility to unnecessary portions other than the object to be processed, contrary to the surface treatment.

JP 2009-135159 A Japanese National Patent Publication No. 6-506762

  Accordingly, an object of the present invention is to provide a surface treatment apparatus that suppresses the accumulation of by-products in places other than the object to be treated during surface treatment and efficiently removes the deposited by-products during cleaning processing. It is to provide.

  A surface treatment apparatus according to the present invention includes a casing portion that forms a cylindrical peripheral wall, a cylindrical sample holder that is provided inside the casing portion and holds a substrate that is an object to be surface-treated. A fluid supply channel that is provided above the sample holder in the housing and supplies fluid to the substrate of the sample holder; and a partition wall provided around the side of the sample holder. An outflow passage portion provided on the outer peripheral side of the partition wall in the housing part and for allowing a fluid supplied from above the sample holder to the substrate to flow out from the outer peripheral side of the partition wall, When the raw material fluid used for the surface treatment of the substrate is supplied as the fluid to the substrate, the partition wall moves to a position that covers the side surface of the sample holder, and the fluid in the casing is used as the fluid. Cleanin used for cleaning process When the fluid is supplied to the substrate is moved to a position where the sample holding stand side is exposed.

  Further, the surface treatment apparatus includes a rotation mechanism that rotates the sample holding table, and the sample holding table is rotated by the rotation mechanism when the cleaning fluid is supplied to the substrate. preferable.

  The surface treatment apparatus preferably includes a heating mechanism for heating the sample holding table, and the sample holding table is heated by the heating mechanism when the cleaning fluid is supplied to the substrate.

  In the surface treatment apparatus, the ratio (h / d) of the cylindrical height (h) of the sample holder to the channel width (d) of the outflow channel section is preferably 0.026 or more.

  According to the present invention, it is possible to suppress the accumulation of by-products in places other than the object to be processed during the surface treatment, and the accumulated by-products are efficiently removed during the cleaning process.

It is a schematic diagram for demonstrating an example of a structure of the surface treatment apparatus which concerns on this embodiment. It is a flowchart explaining operation | movement of the surface treatment apparatus which concerns on this embodiment. It is a figure for demonstrating the surface treatment process in the surface treatment apparatus of this embodiment. It is a figure for demonstrating the cleaning process process in the surface treatment apparatus of this embodiment. It is a schematic diagram of the Taylor Couette style. It is the figure which calculated | required the relationship between to-be-processed object surface temperature and the cleaning speed by simulation.

The surface treatment apparatus described below supplies a raw material fluid for surface treatment onto a substrate, forms a semiconductor layer, an insulating film, a conductor layer, etc. on the substrate, or etches the surface of the substrate, or A surface treatment process, such as forming a coating material, and a cleaning process, in which a cleaning fluid is supplied onto the substrate to remove deposits (by-products) deposited on the surface other than the substrate by the surface treatment, are performed. To do. For example, for the purpose of epitaxial growth of a silicon single crystal, a mixed gas of SiHCl ₃ + H ₂ or the like is used as a raw material fluid for surface treatment, and a mixed gas of HCl + H ₂ or the like is used as a cleaning fluid.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  FIG. 1 is a schematic diagram for explaining an example of the configuration of the surface treatment apparatus according to the present embodiment. As shown in FIG. 1, the surface treatment apparatus 1 includes a casing unit 10 that forms a cylindrical peripheral wall, a cylindrical sample holder 12 provided inside the casing unit 10, and a sample holder 12. And a cylindrical partition wall 14 provided around the side. The shape of the partition 14 is not limited to a cylindrical shape as long as it is provided around the side of the sample holder 12, and may be a square cylindrical shape or the like.

  A sample holding mechanism (not shown) is provided on the upper surface of the cylindrical sample holding table 12, and a substrate 18 such as a silicon wafer on which a silicon single crystal is grown is held by the sample holding mechanism. Examples of the sample holding mechanism include a recess that matches the outer shape of the substrate 18, a mechanism that mechanically fixes the outer periphery of the substrate 18, a mechanism that sucks and fixes the substrate 18 in a vacuum, and the like.

  The cylindrical sample holder 12 is provided with a heating mechanism having a heater 20 and a heating unit 22, and the sample holder 12 can be heated to a predetermined temperature by the heating mechanism. In the present embodiment, a recess is formed on the lower surface side of the cylindrical sample holder 12, and the heater 20 is accommodated in the recess. A heater 20 is connected to the heater 20, and the heater 22 can control the energization of the heater 20 to control the sample holder 12 to a predetermined temperature.

  The cylindrical sample holder 12 is provided with a rotating unit 24. The rotating unit 24 is configured by a motor, a power transmission mechanism for connecting the sample holder 12 and the motor, and the like, and is a rotating mechanism having a function of rotating around a rotation axis perpendicular to the plane of the sample holder 12. The rotation axis perpendicular to the plane of the sample holder 12 is preferably the central axis of the cylindrical casing 10.

  The partition wall 14 is provided with a moving device 26. Although details will be described later, the partition 14 is moved upward so that the side surface of the sample holder 12 is covered with the partition 14 by the moving device 26, or the partition 14 is moved downward so that the side surface of the sample holder 12 is exposed. It can be moved. As a structure of the moving device 26, for example, an actuator including a cylinder and a piston provided so as to be able to appear and retract in the cylinder can be cited. The actuator is configured to expand and contract when a piston moves in and out of the cylinder. The cylinder is fixed to the inner wall of the casing 10, and one end of the piston is attached to the partition wall 14. By inputting a drive signal to such an actuator, the piston protrudes from the inside of the cylinder, and the partition 14 is moved upward to a position where the side surface of the sample holder 12 is covered with the partition 14. Further, when the actuator is not operating, the piston is immersed in the cylinder, and the partition wall 14 moves downward to a position where the side surface of the sample holder 12 is exposed. A support member such as a rail may be provided on the outer periphery of the partition wall 14, and the partition wall 14 may be moved upward or downward along the rail. The moving device 26 is an example, and the configuration of the moving device 26 is not particularly limited, and the partition 14 is moved so as to cover the side surface of the sample holding table 12 or the side wall of the sample holding table 12 is exposed. What is necessary is just to be able to move 14.

  Moreover, in this embodiment, the structure which does not install the moving apparatus 26 may be sufficient. For example, by installing the partition wall 14 so that the partition wall 14 is detachable and attaching the partition wall 14, the side surface of the sample holding table 12 is covered with the partition wall 14, and the partition wall 14 is removed, thereby removing the sample holding table 12. It may be possible to expose the side surface of. Alternatively, the partition wall 14 may be an accordion-like elastic member, and the side surface of the sample holder 12 may be covered or exposed by the expansion / contraction operation.

  A cylindrical portion 28 provided on the upper side of the sample holder 12 in the casing 10 is a fluid supply flow path that supplies the raw material fluid 32 and the cleaning fluid 34 to the substrate 18 on the sample holder 12 (hereinafter referred to as “the fluid supply channel”). , Fluid supply flow path section 28).

  A flow path portion provided on the outer periphery of the partition wall 14 in the housing 10 is an outflow flow path portion 30. The outflow channel section 30 has a function of causing the raw material fluid 32 or the cleaning fluid 34 supplied from the fluid supply channel section 28 toward the substrate 18 to flow out from the outer peripheral side of the partition wall 14 after flowing along the surface of the substrate 18. It is a channel which has.

A supply section 36 is installed in the fluid supply flow path section 28 of the housing section 10. The supply unit 36 cleans the raw material fluid 32 for performing surface treatment on the substrate 18 during the surface treatment of the substrate 18, and removes deposits accumulated in the housing unit 10 during the cleaning process in the housing unit 10. This is a gas supply device having a function of supplying the fluid 34 at a desired pressure and flow rate. For example, a mixed gas of SiHCl ₃ + H ₂ is used as a reaction gas when crystallizing a silicon single crystal, and a mixed gas of HCl + H ₂ is used as a cleaning gas when cleaning the inside of the housing 10. Used.

  It is desirable to install a discharge unit (not shown) on the downstream side (discharge port) of the outflow channel unit 30 of the housing unit 10. The discharge unit is a discharge processing device having a function of discharging the fluid passing through the outflow channel unit 30 to the outside by performing an appropriate discharge detoxification process. It is desirable that the discharge unit includes a discharge pump or the like for easily guiding the fluid to the outside. Examples of the discharge detoxification process include a dilution process and a removal process that removes harmful components contained in the fluid passing through the outflow passage 30 by a precipitation reaction or the like.

  Next, the operation of the surface treatment apparatus 1 shown in FIG. 1 will be described.

  FIG. 2 is a flowchart for explaining the operation of the surface treatment apparatus according to the present embodiment. First, when performing the surface treatment process which performs surface treatment to the board | substrate 18, in step S10, the partition 14 is moved to the position where the side surface of the rotation part 24 is covered with the partition 14 by the moving apparatus 26 (partition 14 is changed). Increase). In step S <b> 12, the sample holder 12 is rotated by the rotating unit 24, the sample holder 12 is heated by the heating unit 22, and the raw material fluid 32 is supplied from the supply unit 36. The raw material fluid 32 is brought into contact with the substrate 18 through the fluid supply channel portion 28, and the surface treatment of the substrate 18 is performed. If the surface treatment process is continued, the surface treatment is also performed on the inner wall and the like of the housing unit 10, and by-products accumulate on the inner wall. Therefore, the surface treatment process is finished, and the substrate 18 is attached to the surface treatment apparatus 1 if necessary. Then, the process proceeds to the cleaning process. In this case, in step S14, the rotation of the rotating unit 24 and the supply of the raw material fluid 32 are stopped, and the substrate 18 is taken out from the surface treatment apparatus 1 if necessary. In step S16, the partition 14 is moved to a position where the side surface of the rotating unit 24 is exposed by the moving device 26 (the partition 14 is lowered). In step S <b> 18, the sample holder 12 is rotated by the rotating unit 24, and the cleaning fluid 34 is supplied from the supply unit 36. The cleaning fluid 34 flows along the surface of the substrate 18 through the fluid supply channel 28 and is discharged from the outflow channel 30. When the cleaning fluid 34 is discharged from the outflow passage portion 30, a Taylor Couette flow described later is formed. By supplying and discharging the cleaning fluid into and from the housing unit 10 as described above, deposits accumulated on the inner wall and the like of the housing unit 10 are removed. When the cleaning process is finished and the process proceeds to the surface treatment process, the rotation of the rotating unit 24 and the supply of the cleaning fluid 34 are stopped in step S20, and then the process returns to step S10.

  Next, the movement of fluid and heat during the surface treatment process and the cleaning process in the surface treatment apparatus 1 of the present embodiment will be described. FIG. 3 is a view for explaining a surface treatment process in the surface treatment apparatus of the present embodiment, and FIG. 4 is a view for explaining a cleaning treatment process in the surface treatment apparatus of the present embodiment.

  During the surface treatment process, as described above, the raw material fluid 32 (gas or liquid) supplied from the supply unit 36 passes through the fluid supply channel unit 28 and is supplied from the fluid supply channel unit 28 to the substrate 18. Here, since the sample holder 12 is rotated by the rotating unit 24, a boundary layer is formed near the surface of the substrate 18. The reaction with the raw material fluid 32 is performed on the surface of the substrate 18 or in the boundary layer, and the substrate 18 is surface-treated. Further, the raw material fluid 32 flows along the surface of the substrate 18, is discharged to the outflow channel portion 30, and is sent to the discharge portion.

  Here, in the surface treatment step, the sample holder 12 is heated by the heating unit 22 in terms of improving the reaction efficiency. In the present embodiment, as shown in FIG. Since the partition wall 14 is pushed upward and moved to a position that covers the side surface of the sample holder 12, the movement of heat from the heated sample holder 12 to the inner wall of the housing unit 10 is suppressed.

  In addition, the raw material fluid 32 flowing through the outflow channel section 30 is a Taylor Couette flow that occurs with the rotation of the sample holder 12 as will be described later due to the presence of the partition wall 14 at a position covering the side surface of the sample holder 12. It does not become a characteristic gas flow called, but as shown in FIG. Therefore, the diffusibility of the raw material fluid 32 in the outflow channel portion 30 is small. That is, in the surface treatment apparatus 1 of the present embodiment, during the surface treatment process, heat is transferred from the heated sample holder 12 to the housing unit 10 and the diffusibility of the raw material fluid 32 in the housing unit 10 ( In particular, since the diffusivity of the raw material fluid 32 flowing through the outflow passage portion 30 is small, the surface treatment is performed on the inner wall of the housing portion 10 to suppress the accumulation of by-products.

  During the cleaning process, as described above, the cleaning fluid 34 (gas or liquid) supplied from the supply unit 36 passes through the fluid supply channel unit 28 and is supplied from the fluid supply channel unit 36 to the substrate 18. It flows along the surface of 18 and is sent to the outflow channel section 30.

  In this embodiment, as shown in FIG. 4, the moving device 26 moves the partition wall 14 to a position where the side surface of the sample holding table 12 is exposed. Heat easily moves to the inner wall. Here, in order to increase the heat transfer amount of the housing unit 10, it is desirable to heat the sample holder 12 by the heating unit 22 during the cleaning process. However, as long as the sample holder 12 is sufficiently heated in the surface treatment process, the heating of the sample holder 12 may be stopped during the cleaning process.

  Further, when the sample holder 12 is rotated by the rotating unit 24 and the partition 14 is moved to a position where the side surface of the sample holder 12 is exposed, the rotating sample holder 12 and the cleaning fluid 34 come into contact with each other. The cleaning fluid 34 flowing through the passage 30 forms not only a simple downward flow but also a Taylor Couette flow as shown in FIG. This Taylor Couette flow further increases the amount of heat transfer to the casing 10 and the diffusibility of the cleaning fluid in the outflow passage section 30, improving the cleaning speed as described later, and the inner wall of the casing 10. The deposited deposit can be efficiently removed.

  First, the Taylor Couette flow will be described. FIG. 5 is a schematic diagram of the Taylor Couette flow. As shown in the schematic diagram of FIG. 5 (extracted from Paritam K. Dutta and Ajay K. Ray, Chemical Engineering Science, vol. 59, pp. 5249-5259 (2004)), the Taylor Couette flow supplies the central axis Z. In two coaxial cylinders, when only the inner cylinder A rotates at an angular velocity ω (or the inner cylinder rotates faster than the outer cylinder), fluid flows between the cylinders. Is a flow having a cell-like vortex row TQ. When the term Taylor Couette flow is used, it often refers to a laminar flow, but it is not limited to laminar flow or turbulent flow, and includes both laminar and turbulent flow. . Therefore, the term Taylor Couette flow used in this specification is a concept including both laminar and turbulent flow.

  In the surface treatment apparatus 1 shown in FIG. 4, the partition 14 is moved downward, the cylindrical sample holder 12 is rotated, and the rotating cylindrical sample holder 12 and the cleaning gas are in contact with each other. As a result, a Taylor Couette flow is formed in the outflow channel portion 30. Since the Taylor Couette flow formed in the outflow channel portion 30 circulates between the sample holding base 12 and the inner wall of the housing portion 10, the heat of the heated sample holding base 12 is transferred to the inner wall of the housing portion 10. The inner wall of the housing 10 can be effectively heated from the state where the cylindrical sample holder 12 is stationary and the partition wall 14 is moved downward. Non-patent literature of Kataoka, K. Journal of Chemical Engineering of Japan, vol.8, No.4, pp.271-276 (1975) describes that the rotational speed of the rotating part 24 and the diameter of the rotating part 24 increase. Therefore, the distribution of the increasing amount (Reynolds number Re) and the heat transfer amount (Nussell number Nu) is required. The distribution shows that the amount of heat transfer is increased by rotating the rotating unit 24 to form a Taylor Couette flow. In addition, the distribution shows a tendency that the heat transfer amount increases as the rotational speed of the rotating unit 24 is increased. In the present embodiment, the rotation of the sample holder 12 may be stopped in the cleaning process. As a result, a Taylor Couette flow is not formed. However, if the partition wall 14 is lowered and the side surface of the sample holder 12 is exposed, the heat of the sample holder 12 heated during the surface treatment or the like is transferred to the inner wall of the housing unit 10. This is because the inner wall of the housing unit 10 is heated more than when the side surface of the sample holder 12 is covered with the partition wall 14 because it is easily transmitted to the wall.

  As described above, by efficiently heating the inner wall of the housing 10, the cleaning speed is improved, and the deposits deposited on the inner wall of the housing 10 can be efficiently removed. FIG. 6 is a diagram in which the relationship between the surface temperature of the workpiece and the cleaning speed is obtained by simulation. As can be seen from FIG. 6, when the surface temperature of the workpiece increases, the cleaning speed is improved. In addition, in the non-patent literature of Habuka, H. et al., Thin Solid Films, vol.489, pp.104-110 (2005), the relationship between the surface temperature of the object to be processed and the cleaning speed is obtained by experiments. In addition, as the surface temperature of the workpiece increases, the cleaning speed is improved. That is, as in the surface treatment apparatus 1 of the present embodiment, the amount of heat transfer is increased by forming a Taylor Couette flow in the outflow passage portion 30, and the temperature of the inner wall is increased, so that the cleaning gas and the inner wall are increased. The reaction with the deposited deposit is promoted and the cleaning rate can be improved.

  Non-patent literature of Kataoka, K. Journal of Chemical Engineering of Japan, vol.8, No.4, pp.271-276 (1975) includes a quantity indicating the diffusion performance of a substance (Sherwood number Sh) and rotation. The distribution of the number of rotations of the part 24 and the amount (Reynolds number Re) that increases as the diameter of the rotation part 24 increases is required. The distribution shows that the diffusibility of the substance is increased by rotating the rotating unit 24 to form a Taylor Couette flow. That is, the diffusibility of the cleaning fluid 34 passing through the outflow passage 30 is improved by the Taylor Couette flow formed in the outflow passage 30. As a result, the cleaning fluid 34 can secure more opportunities for contact with the inner wall of the casing 10, and deposits deposited on the inner wall of the casing 10 can be efficiently removed.

  In general, a by-product gas having an action of hindering the reaction of the cleaning process is generated from the inner wall of the casing unit 10 due to the reaction between the cleaning fluid 34 and the deposit accumulated on the inner wall of the casing unit 10. To do. However, as described above, the cleaning fluid 34 passing through the outflow channel portion 30 has high fluid diffusibility due to the Taylor Couette flow, and therefore, the by-product gas generated from the inner wall of the housing unit 10 is removed from the outflow channel portion 30. Can be discharged efficiently. As a result, it is possible to efficiently remove deposits deposited on the inner wall of the housing unit 10 without hindering the reaction of the cleaning process.

  The cylindrical shape exposed by the movement of the partition wall 14 with respect to the flow path width (d in FIG. 4) of the outflow flow path portion 30 in terms of the formation of the Taylor Couette flow, the increase in the amount of heat transfer, the improvement of the fluid diffusibility, etc. The ratio (h / d) of the cylindrical height (h in FIG. 4) of the sample holder 12 is preferably set to 0.026 or more. When the h / d is less than 0.026, it is difficult to form a Taylor Couette flow, the amount of heat transfer from the sample holder 12 to the inner wall of the housing 10 is reduced, The diffusibility of the cleaning fluid 34 may decrease. The above figures are the smallest among the experimentally observed non-patent literature of Abrahasou, SD, Eaton, JK, and Koga, DJ, Physics of Fluids A, vol.1, pp.241-251 (1989). Value.

  The higher the number of revolutions of the cylindrical sample holder 12, the more turbulent Taylor Couette flow is formed, the amount of heat transfer from the sample holder 12 to the inner wall of the casing 10 increases, and the fluid flow path The diffusibility of the cleaning fluid 34 at the portion is improved. For example, when the substrate 18 is present, the number of rotations of the cylindrical sample holder 12 can ensure stable holding, and the fluid does not return to the upper side (supply side 36 side) from the supply flow path part 28. It is preferable to increase as much as possible within a range that can ensure the above.

  DESCRIPTION OF SYMBOLS 1 Surface treatment apparatus, 10 housing | casing part, 12 Sample holding stand, 14 Partition, 18 Substrate, 20 Heater, 22 Heating part, 24 Rotating part, 26 Moving apparatus, 28 Cylindrical part (fluid supply flow path part), 30 Outflow Flow path part, 32 raw material fluid, 34 cleaning fluid, 36 supply part.

Claims (4)

A housing part forming a cylindrical peripheral wall;
A cylindrical sample holder that is provided inside the housing and holds a substrate that is a target for surface treatment;
A fluid supply flow path portion that is provided above the sample holding table in the housing and supplies a fluid to the substrate of the sample holding table;
A partition wall provided around the side of the sample holder;
An outflow channel portion provided on the outer peripheral side of the partition wall in the housing portion and for allowing a fluid supplied from above the sample holder to the substrate to flow out from the outer peripheral side of the partition wall;
The partition moves to a position that covers the side surface of the sample holder when the raw material fluid used for the surface treatment of the substrate is supplied to the substrate as the fluid, When the cleaning fluid used for the cleaning process is supplied to the substrate, the surface treatment apparatus moves to a position where the side surface of the sample holder is exposed. A rotation mechanism for rotating the sample holder;
The surface treatment apparatus according to claim 1, wherein when the cleaning fluid is supplied to the substrate, the sample holder is rotated by the rotation mechanism. A heating mechanism for heating the sample holder;
The surface treatment apparatus according to claim 1, wherein the sample holding table is heated by the heating mechanism when the cleaning fluid is supplied to the substrate.   The surface treatment according to claim 2, wherein the ratio (h / d) of the cylindrical height (h) of the sample holder to the channel width (d) of the outflow channel section is 0.026 or more. apparatus.

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