JP5269757B2 - Multilayer wiring board - Google Patents

Multilayer wiring board Download PDF

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JP5269757B2
JP5269757B2 JP2009296913A JP2009296913A JP5269757B2 JP 5269757 B2 JP5269757 B2 JP 5269757B2 JP 2009296913 A JP2009296913 A JP 2009296913A JP 2009296913 A JP2009296913 A JP 2009296913A JP 5269757 B2 JP5269757 B2 JP 5269757B2
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main surface
surface side
wiring board
multilayer wiring
metal conductor
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JP2011138870A (en
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真之介 前田
哲夫 鈴木
訓 平野
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NGK Spark Plug Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a multilayer wiring substrate with high reliability by preventing a resin insulating layer from cracking. <P>SOLUTION: The multilayer wiring substrate 10 has a wiring laminate portion 30 formed by alternately laminating a plurality of resin insulating layers 21 to 24 composed principally of the same resin insulating material and a plurality of conductor layers 26 into a multilayer structure. The resin insulating layer 21 as an outermost layer has a plurality of openings 37 formed on the side of a lower surface 32 of the wiring laminate portion 30. A lower-stage metal conductor portion 45a constituting a mother substrate connection terminal 45 is positioned in an opening 37 formed in the resin insulating layer 21. An upper-stage metal conductor portion 45b constituting the mother substrate connection terminal 45 is formed on the lower-stage metal conductor portion 45a and resin insulating layer 21 to cover an opening edge of the opening 37. <P>COPYRIGHT: (C)2011,JPO&amp;INPIT

Description

本発明は、同じ樹脂絶縁材料を主体とした複数の樹脂絶縁層及び複数の導体層を交互に積層して多層化した積層構造体を有する一方でいわゆるコア基板を有しない多層配線基板に関するものである。   The present invention relates to a multilayer wiring board having a multilayer structure in which a plurality of resin insulation layers and a plurality of conductor layers mainly composed of the same resin insulation material are alternately laminated, and having no so-called core board. is there.

コンピュータのマイクロプロセッサ等として使用される半導体集積回路素子(ICチップ)は、近年ますます高速化、高機能化しており、これに付随して端子数が増え、端子間ピッチも狭くなる傾向にある。一般的にICチップの底面には多数の端子が密集してアレイ状に配置されており、このような端子群はマザーボード側の端子群に対してフリップチップの形態で接続される。ただし、ICチップ側の端子群とマザーボード側の端子群とでは端子間ピッチに大きな差があることから、ICチップをマザーボード上に直接的に接続することは困難である。そのため、通常はICチップをICチップ搭載用配線基板上に搭載してなる半導体パッケージを作製し、その半導体パッケージをマザーボード上に搭載するという手法が採用される。   In recent years, semiconductor integrated circuit elements (IC chips) used as computer microprocessors and the like have become increasingly faster and more functional, with an accompanying increase in the number of terminals and a tendency to narrow the pitch between terminals. . In general, a large number of terminals are densely arranged on the bottom surface of an IC chip, and such a terminal group is connected to a terminal group on the motherboard side in the form of a flip chip. However, it is difficult to connect the IC chip directly on the mother board because there is a large difference in the pitch between the terminals on the IC chip side terminal group and the mother board side terminal group. For this reason, a method is generally employed in which a semiconductor package is prepared by mounting an IC chip on an IC chip mounting wiring board, and the semiconductor package is mounted on a motherboard.

この種のパッケージを構成するICチップ搭載用配線基板としては、コア基板の表面及び裏面にビルドアップ層を形成した多層配線基板が実用化されている。この多層配線基板においては、コア基板として、例えば、補強繊維に樹脂を含浸させた樹脂基板(ガラスエポキシ基板など)が用いられている。そして、そのコア基板の剛性を利用して、コア基板の表面及び裏面に樹脂絶縁層と導体層とを交互に積層することにより、ビルドアップ層が形成されている。つまり、この多層配線基板において、コア基板は、補強の役割を果たしており、ビルドアップ層と比べて非常に厚く形成されている。また、コア基板には、表面及び裏面に形成されたビルドアップ層間の導通を図るための配線(具体的には、スルーホール導体など)が貫通形成されている。   As an IC chip mounting wiring board constituting this type of package, a multilayer wiring board in which build-up layers are formed on the front surface and the back surface of a core substrate has been put into practical use. In this multilayer wiring substrate, for example, a resin substrate (such as a glass epoxy substrate) in which a reinforcing fiber is impregnated with a resin is used as a core substrate. Then, by utilizing the rigidity of the core substrate, a buildup layer is formed by alternately laminating a resin insulating layer and a conductor layer on the front surface and the back surface of the core substrate. That is, in this multilayer wiring board, the core board plays a role of reinforcement and is formed much thicker than the build-up layer. In addition, wiring (specifically, a through-hole conductor or the like) is formed through the core substrate for conduction between buildup layers formed on the front surface and the back surface.

ところで近年では、半導体集積回路素子の高速化に伴い、使用される信号周波数が高周波帯域となってきている。この場合、コア基板を貫通する配線が大きなインダクタンスとして寄与し、高周波信号の伝送ロスや回路誤動作の発生につながり、高速化の妨げとなってしまう。この問題を解決するために、多層配線基板を、コア基板を有さない基板とすることが提案されている(例えば特許文献1参照)。この多層配線基板は、比較的に厚いコア基板を省略することにより全体の配線長を短くしたものであるため、高周波信号の伝送ロスが低減され、半導体集積回路素子を高速で動作させることが可能となる。   By the way, in recent years, with the increase in the speed of semiconductor integrated circuit elements, the signal frequency used has become a high frequency band. In this case, the wiring penetrating the core substrate contributes as a large inductance, leading to transmission loss of high-frequency signals and circuit malfunction, which hinders speeding up. In order to solve this problem, it has been proposed that the multilayer wiring board is a board that does not have a core board (see, for example, Patent Document 1). Since this multilayer wiring board has a shorter overall wiring length by omitting a relatively thick core substrate, the transmission loss of high-frequency signals is reduced, and the semiconductor integrated circuit element can be operated at high speed. It becomes.

特許文献1に開示されている製造方法では、仮基板の片面に金属箔を配置し、その金属箔の上に複数の導体層及び複数の樹脂絶縁層を交互に積層してなるビルドアップ層を形成する。その後、仮基板から金属箔を分離して、金属箔上にビルドアップ層が形成された構造体を得る。そして、金属箔をエッチングにより除去して、ビルドアップ層の最外層の表面(樹脂絶縁層の表面や複数の接続端子の表面)を露出させることで多層配線基板を製造している。   In the manufacturing method disclosed in Patent Literature 1, a metal foil is disposed on one surface of a temporary substrate, and a build-up layer formed by alternately laminating a plurality of conductor layers and a plurality of resin insulating layers on the metal foil. Form. Thereafter, the metal foil is separated from the temporary substrate to obtain a structure in which a build-up layer is formed on the metal foil. Then, the metal foil is removed by etching to expose the surface of the outermost layer of the build-up layer (the surface of the resin insulating layer and the surfaces of the plurality of connection terminals), thereby manufacturing a multilayer wiring board.

特開2007−158174号公報(図7など)JP 2007-158174 A (FIG. 7 etc.)

ところで、上記特許文献1において、比較的面積が大きな接続端子(例えば、マザーボードに接続される母基板接続端子)の表面が最外層の樹脂絶縁層と面一となるよう形成された多層配線基板が開示されている。この多層配線基板では、母基板接続端子と樹脂絶縁層との境界部分に応力が加わる場合がある。このため、図19に示されるように、母基板接続端子101と樹脂絶縁層102との境界部分を起点として樹脂絶縁層102側にクラック103が発生するといった問題が生じてしまう。   By the way, in the above-mentioned Patent Document 1, there is a multilayer wiring board formed so that the surface of a connection terminal having a relatively large area (for example, a mother board connection terminal connected to a motherboard) is flush with the outermost resin insulation layer. It is disclosed. In this multilayer wiring board, stress may be applied to the boundary portion between the mother board connection terminal and the resin insulating layer. For this reason, as shown in FIG. 19, there arises a problem that a crack 103 occurs on the resin insulating layer 102 side starting from a boundary portion between the mother board connection terminal 101 and the resin insulating layer 102.

また、特許文献1には、ビルドアップ層の最外層にソルダーレジストを形成した多層配線基板が開示されている。多層配線基板において、母基板接続端子の表面側外周部をソルダーレジストで被覆することにより、母基板接続端子と樹脂絶縁層との境界部分に加わる応力が緩和される。ところが、多層配線基板において、最外層にソルダーレジストを形成する場合、そのソルダーレジストと内層の各樹脂絶縁層とは熱膨張係数が異なるため、それらの熱膨張係数差に応じて基板の反りが発生してしまう。この場合には、その反りを抑えるための構成(例えば、補強板など)が別途必要になり、結果として多層配線基板の製造コストが高くなってしまう。   Patent Document 1 discloses a multilayer wiring board in which a solder resist is formed on the outermost layer of the buildup layer. In the multilayer wiring board, the stress applied to the boundary portion between the mother board connection terminal and the resin insulating layer is relieved by coating the outer peripheral part on the surface side of the mother board connection terminal with the solder resist. However, when a solder resist is formed on the outermost layer in a multilayer wiring board, the solder resist and each resin insulation layer of the inner layer have different thermal expansion coefficients, so that the board warps according to the difference in the thermal expansion coefficients. Resulting in. In this case, a configuration (for example, a reinforcing plate) for suppressing the warpage is separately required, and as a result, the manufacturing cost of the multilayer wiring board increases.

本発明は上記の課題に鑑みてなされたものであり、その目的は、樹脂絶縁層におけるクラックの発生を防止して信頼性の高い多層配線基板を提供することにある。   The present invention has been made in view of the above problems, and an object thereof is to provide a highly reliable multilayer wiring board by preventing the occurrence of cracks in a resin insulating layer.

そして上記課題を解決するための手段(手段1)としては、同じ樹脂絶縁材料を主体とする複数の樹脂絶縁層及び複数の導体層を交互に積層して多層化した積層構造体を有し、前記積層構造体の第1主面側には複数の第1主面側接続端子が配置され、前記積層構造体の第2主面側には複数の第2主面側接続端子が配置され、前記複数の導体層は、前記複数の樹脂絶縁層に形成され、前記第1主面側または前記第2主面側に向うに従って拡径したビア導体により接続されている多層配線基板であって、前記積層構造体の前記第2主面側において露出状態にある最外層の樹脂絶縁層には複数の開口部が形成され、前記複数の第2主面側接続端子は、前記開口部内に位置する下段金属導体部と、前記開口部の開口縁を覆う状態で前記下段金属導体部及び前記最外層の樹脂絶縁層の上に形成された上段金属導体部とからなる2段構造を有し、前記上段金属導体部は前記下段金属導体部よりも面積が大きく、前記下段金属導体部はそれに接続するビア導体の端面よりも面積が大きいことを特徴とする多層配線基板がある。 And as a means (means 1) for solving the above-mentioned problem, it has a laminated structure in which a plurality of resin insulation layers mainly composed of the same resin insulation material and a plurality of conductor layers are alternately laminated to form a multilayer structure, A plurality of first main surface side connection terminals are arranged on the first main surface side of the laminated structure, and a plurality of second main surface side connection terminals are arranged on the second main surface side of the laminated structure, The plurality of conductor layers are multilayer wiring boards formed on the plurality of resin insulation layers and connected by via conductors whose diameter is increased toward the first main surface side or the second main surface side, A plurality of openings are formed in the outermost resin insulation layer exposed on the second main surface side of the multilayer structure, and the plurality of second main surface side connection terminals are located in the openings. The lower metal conductor portion in a state of covering the lower metal conductor portion and the opening edge of the opening. Fine said have a two-stage structure composed of an upper metal conductor portion formed on the outermost resin insulation layer, the upper metal conductor portion is larger in area than the lower metal conductor portion, said lower metal conductor portion There is a multilayer wiring board characterized in that the area is larger than the end face of the via conductor connected thereto .

従って、上記手段に記載の発明によると、同じ樹脂絶縁材料を主体とした複数の樹脂絶縁層及び複数の導体層が交互に積層され、コア基板を含まないコアレス配線基板として多層配線基板が形成されている。この多層配線基板において、積層構造体の第2主面側に設けられる複数の第2主面側接続端子は、下段金属導体部と上段金属導体部とからなる2段構造を有している。そして、第2主面側接続端子を構成する下段金属導体部は、露出状態にある最外層の樹脂絶縁層に形成された開口部内に位置し、第2主面側接続端子を構成する上段金属導体部は、開口部の開口縁を覆う状態で下段金属導体部及び最外層の樹脂絶縁層の上に形成されている。このようにすると、下段金属導体部と樹脂絶縁層との境界部分が上段金属導体部で塞がれた形状となるので、その境界部分に加わる応力が緩和される。このため、樹脂絶縁層にクラックが発生するリスクが減り、従来に比べて多層配線基板の信頼性が向上する。   Therefore, according to the invention described in the above means, a plurality of resin insulation layers and a plurality of conductor layers mainly composed of the same resin insulation material are alternately laminated, and a multilayer wiring board is formed as a coreless wiring board not including a core board. ing. In this multilayer wiring board, the plurality of second main surface side connection terminals provided on the second main surface side of the multilayer structure have a two-stage structure including a lower metal conductor portion and an upper metal conductor portion. The lower metal conductor portion constituting the second main surface side connection terminal is located in the opening formed in the outermost resin insulating layer in the exposed state, and the upper metal metal portion constituting the second main surface side connection terminal. The conductor part is formed on the lower metal conductor part and the outermost resin insulating layer so as to cover the opening edge of the opening part. If it does in this way, since it will become the shape where the boundary part of a lower metal conductor part and a resin insulating layer was block | closed by the upper metal conductor part, the stress added to the boundary part is relieved. For this reason, the risk of cracks occurring in the resin insulation layer is reduced, and the reliability of the multilayer wiring board is improved as compared with the conventional case.

上記手段に記載の発明では、上段金属導体部は下段金属導体部よりも面積が大きく、下段金属導体部はそれに接続するビア導体の端面よりも面積が大きい。このようにすると、多層配線基板の内側に配置されるビア導体から段階的に導体部の断面積が大きくなるので、樹脂絶縁層と導体部との間に作用する応力を効果的に分散させることができる。このため、クラックの発生を確実に防止することができ、多層配線基板の信頼性をより高めることができる。 In the invention described in the above-described means, the upper stepped metal conductor portion larger in area than the lower metal conductor portion, the lower metal conductor portion has a size area than the end face of the via conductor connected to it. If you like this, since the cross-sectional area of the stepwise conductor portion from the via conductor disposed inside the multilayer wiring board is increased, effectively dispersed to the stress acting between the resin insulating layer and a conductor portion be able to. For this reason, generation | occurrence | production of a crack can be prevented reliably and the reliability of a multilayer wiring board can be improved more.

積層構造体の第2主面側において露出状態にある最外層の樹脂絶縁層の外側主面から最も近い導体層までに相当する厚さは、積層構造体における他の樹脂絶縁層の厚さよりも大きいことが好ましい。このようにすると、最外層の樹脂絶縁層に形成された開口部内に下段金属導体部が位置するように第2主面側接続端子を確実に形成することが可能となり、応力が緩和され図19に記載のクラックが抑制できる。   The thickness corresponding to the outermost main surface of the outermost resin insulation layer that is exposed on the second main surface side of the multilayer structure to the nearest conductor layer is larger than the thickness of the other resin insulation layers in the multilayer structure. Larger is preferred. This makes it possible to reliably form the second main surface side connection terminal so that the lower metal conductor portion is positioned in the opening formed in the outermost resin insulating layer, and the stress is relieved, thereby reducing the stress. The cracks described in 1 can be suppressed.

2段構造を有する複数の第2主面側接続端子は、端子外面が凹形状であることが好ましく、端子外面の最深部が下段金属導体部に至っていることがより好ましい。このように第2主面側接続端子を形成すると、端子外面に対するはんだの接触面積が増すため、はんだ接続の強度を高めることができる。   The plurality of second main surface side connection terminals having a two-stage structure preferably have a concave terminal outer surface, and more preferably the deepest portion of the terminal outer surface reaches the lower metal conductor portion. When the second main surface side connection terminal is formed in this way, the contact area of the solder with respect to the outer surface of the terminal is increased, so that the strength of the solder connection can be increased.

2段構造を有する複数の第2主面側接続端子は、接続対象が母基板であり第1主面側接続端子よりも面積の大きい複数の母基板接続端子であってもよい。この場合、比較的面積が大きい母基板接続端子を母基板に確実に接続することができる。
また、第2主面側接続端子は、母基板が接続される主面側に設けられてもよいし、その主面の反対側、例えばICチップが搭載される主面側に設けられてもよい。
The plurality of second main surface side connection terminals having a two-stage structure may be a plurality of mother substrate connection terminals whose connection target is a mother substrate and has a larger area than the first main surface side connection terminals. In this case, the mother board connection terminal having a relatively large area can be reliably connected to the mother board.
Further, the second main surface side connection terminal may be provided on the main surface side to which the mother board is connected, or may be provided on the opposite side of the main surface, for example, on the main surface side on which the IC chip is mounted. Good.

複数の樹脂絶縁層に形成されたビア導体は、いずれも第2主面側から第1主面側に向うに従って拡径した形状を有していてもよい。また逆に、複数の樹脂絶縁層に形成された前記ビア導体は、いずれも第1主面側から第2主面側に向うに従って拡径した形状を有していてもよい。このようにすると、コア基板を有さないコアレス配線基板を比較的容易に製造することができる。   The via conductors formed in the plurality of resin insulation layers may all have a shape whose diameter is increased from the second main surface side toward the first main surface side. Conversely, the via conductors formed in the plurality of resin insulation layers may have a shape whose diameter is increased from the first main surface side toward the second main surface side. In this way, a coreless wiring board that does not have a core board can be manufactured relatively easily.

上段金属導体部は、主体をなす銅層の上面及び側面を銅以外のめっき層で覆った構造を有していてもよい。このようにすると、第2主面側接続端子における上段金属導体部の上面及び側面を覆うようにはんだを形成することができるため、部品接合時には好適な形状のはんだフィレットが形成されやすくなる。   The upper metal conductor portion may have a structure in which the upper surface and the side surface of the copper layer constituting the main body are covered with a plating layer other than copper. If it does in this way, since solder can be formed so that the upper surface and side of the upper metal conductor part in the 2nd principal surface side connecting terminal may be covered, it will become easy to form a solder fillet of a suitable shape at the time of component joining.

複数の樹脂絶縁層は、光硬化性を付与していない樹脂絶縁材料、例えば熱硬化性の樹脂絶縁材料の硬化物を主体とした同じビルドアップ材を用いて形成されたものであることが好ましい。この場合、各接続端子が形成される最外層の樹脂絶縁層は、内層の樹脂絶縁層と同じ絶縁性に優れたビルドアップ材で形成されるため、各接続端子の間隔を狭くすることができ、多層配線基板の高集積化が可能となる。   The plurality of resin insulation layers are preferably formed using the same build-up material mainly composed of a resin insulation material not imparting photocurability, for example, a cured product of a thermosetting resin insulation material. . In this case, the outermost resin insulation layer on which each connection terminal is formed is made of the same build-up material as the inner resin insulation layer, so that the interval between the connection terminals can be reduced. High integration of the multilayer wiring board is possible.

樹脂絶縁層の形成材料の好適例としては、エポキシ樹脂、フェノール樹脂、ウレタン樹脂、シリコーン樹脂、ポリイミド樹脂などの熱硬化性樹脂、ポリカーボネート樹脂、アクリル樹脂、ポリアセタール樹脂、ポリプロピレン樹脂などの熱可塑性樹脂等が挙げられる。そのほか、これらの樹脂とガラス繊維(ガラス織布やガラス不織布)やポリアミド繊維等の有機繊維との複合材料、あるいは、連続多孔質PTFE等の三次元網目状フッ素系樹脂基材にエポキシ樹脂などの熱硬化性樹脂を含浸させた樹脂−樹脂複合材料等を使用してもよい。   Preferred examples of the material for forming the resin insulation layer include thermosetting resins such as epoxy resins, phenol resins, urethane resins, silicone resins and polyimide resins, thermoplastic resins such as polycarbonate resins, acrylic resins, polyacetal resins and polypropylene resins. Is mentioned. In addition, composite materials of these resins and organic fibers such as glass fibers (glass woven fabrics and glass nonwoven fabrics) and polyamide fibers, or three-dimensional network fluorine-based resin base materials such as continuous porous PTFE, epoxy resins, etc. A resin-resin composite material impregnated with a thermosetting resin may be used.

導体層は、主として銅からなり、サブトラクティブ法、セミアディティブ法、フルアディティブ法などといった公知の手法によって形成される。具体的に言うと、例えば、銅箔のエッチング、無電解銅めっきあるいは電解銅めっきなどの手法が適用される。なお、スパッタやCVD等の手法により薄膜を形成した後にエッチングを行うことで導体層や接続端子を形成したり、導電性ペースト等の印刷により導体層を形成したりすることも可能である。   The conductor layer is mainly made of copper and is formed by a known method such as a subtractive method, a semi-additive method, or a full additive method. Specifically, for example, techniques such as etching of copper foil, electroless copper plating, or electrolytic copper plating are applied. Note that a conductor layer and connection terminals can be formed by etching after forming a thin film by a technique such as sputtering or CVD, or a conductor layer can be formed by printing a conductive paste or the like.

多層配線基板の製造方法としては、金属箔を剥離可能な状態で片面に積層配置してなる支持基材を準備するとともに、前記第1主面側接続端子または前記第2主面側接続端子における下段金属導体部を前記金属箔上に形成する金属導体部形成工程と、前記金属導体部形成工程後、複数の樹脂絶縁層及び複数の導体層を交互に積層して多層化することにより積層構造体を形成するビルドアップ工程と、前記ビルドアップ工程後、前記支持基材を除去して前記金属箔を露出させる基材除去工程と、前記ビルドアップ工程後、前記下段金属導体部を残しつつ前記積層構造体における前記金属箔を選択的にエッチング除去して上段金属導体部を形成することにより、2段構造を有する前記第2主面側接続端子を形成する接続端子形成工程とを含む方法がある。このように多層配線基板を製造すれば、第2主面側接続端子の下段金属導体部を最外層の樹脂絶縁層に形成された開口部内に位置させることができる。また、下段金属導体部及び前記最外層の樹脂絶縁層の上に開口部の開口縁を覆う状態で上段金属導体部を形成することができる。このように第2主面側接続端子を形成すると、樹脂絶縁層にクラックが発生するリスクを減らすことができ、従来に比べて信頼性の高い多層配線基板を容易にかつ確実に製造することができる。   As a manufacturing method of a multilayer wiring board, while preparing a support substrate formed by laminating and arranging a metal foil on one side, the first main surface side connection terminal or the second main surface side connection terminal A laminated structure in which a plurality of resin insulation layers and a plurality of conductor layers are alternately laminated after the metal conductor portion forming step for forming a lower metal conductor portion on the metal foil and the metal conductor portion forming step. A build-up process for forming a body, a base material removal process for removing the supporting base material to expose the metal foil after the build-up process, and the build-up process, while leaving the lower metal conductor part A connection terminal forming step of forming the second main surface side connection terminal having a two-stage structure by selectively etching away the metal foil in the laminated structure to form an upper metal conductor portion. A. When the multilayer wiring board is manufactured as described above, the lower metal conductor portion of the second main surface side connection terminal can be positioned in the opening formed in the outermost resin insulating layer. Further, the upper metal conductor portion can be formed on the lower metal conductor portion and the outermost resin insulating layer so as to cover the opening edge of the opening. When the second main surface side connection terminals are formed in this way, the risk of cracks occurring in the resin insulating layer can be reduced, and a multilayer wiring board with higher reliability than conventional can be easily and reliably manufactured. it can.

一実施の形態における多層配線基板の概略構成を示す断面図。Sectional drawing which shows schematic structure of the multilayer wiring board in one embodiment. 多層配線基板の概略構成を示す平面図。The top view which shows schematic structure of a multilayer wiring board. 多層配線基板の概略構成を示す平面図。The top view which shows schematic structure of a multilayer wiring board. 多層配線基板の製造方法を示す説明図。Explanatory drawing which shows the manufacturing method of a multilayer wiring board. 多層配線基板の製造方法を示す説明図。Explanatory drawing which shows the manufacturing method of a multilayer wiring board. 多層配線基板の製造方法を示す説明図。Explanatory drawing which shows the manufacturing method of a multilayer wiring board. 多層配線基板の製造方法を示す説明図。Explanatory drawing which shows the manufacturing method of a multilayer wiring board. 多層配線基板の製造方法を示す説明図。Explanatory drawing which shows the manufacturing method of a multilayer wiring board. 多層配線基板の製造方法を示す説明図。Explanatory drawing which shows the manufacturing method of a multilayer wiring board. 多層配線基板の製造方法を示す説明図。Explanatory drawing which shows the manufacturing method of a multilayer wiring board. 多層配線基板の製造方法を示す説明図。Explanatory drawing which shows the manufacturing method of a multilayer wiring board. 多層配線基板の製造方法を示す説明図。Explanatory drawing which shows the manufacturing method of a multilayer wiring board. 多層配線基板の製造方法を示す説明図。Explanatory drawing which shows the manufacturing method of a multilayer wiring board. 多層配線基板の製造方法を示す説明図。Explanatory drawing which shows the manufacturing method of a multilayer wiring board. 別の実施の形態における多層配線基板の概略構成を示す断面図。Sectional drawing which shows schematic structure of the multilayer wiring board in another embodiment. 別の実施の形態における多層配線基板の概略構成を示す断面図。Sectional drawing which shows schematic structure of the multilayer wiring board in another embodiment. 別の実施の形態における多層配線基板の概略構成を示す断面図。Sectional drawing which shows schematic structure of the multilayer wiring board in another embodiment. 別の実施の形態における多層配線基板の概略構成を示す断面図。Sectional drawing which shows schematic structure of the multilayer wiring board in another embodiment. 従来の多層配線基板を示す拡大断面図。The expanded sectional view which shows the conventional multilayer wiring board.

以下、本発明を多層配線基板に具体化した一実施の形態を図面に基づき詳細に説明する。図1は、本実施の形態の多層配線基板の概略構成を示す拡大断面図である。また、図2は、上面側から見た多層配線基板の平面図であり、図3は、下面側から見た多層配線基板の平面図である。   Hereinafter, an embodiment in which the present invention is embodied in a multilayer wiring board will be described in detail with reference to the drawings. FIG. 1 is an enlarged cross-sectional view showing a schematic configuration of the multilayer wiring board of the present embodiment. 2 is a plan view of the multilayer wiring board as viewed from the upper surface side, and FIG. 3 is a plan view of the multilayer wiring board as viewed from the lower surface side.

図1に示されるように、多層配線基板10は、コア基板を含まずに形成されたコアレス配線基板であって、同じ樹脂絶縁材料を主体とした4層の樹脂絶縁層21,22,23,24と銅からなる導体層26とを交互に積層して多層化した配線積層部30(積層構造体)を有している。各樹脂絶縁層21〜24は、光硬化性を付与していない樹脂絶縁材料、具体的には熱硬化性エポキシ樹脂の硬化物を主体としたビルドアップ材を用いて形成されている。多層配線基板10において、配線積層部30の上面31側(第1主面側)には、複数の接続端子41,42(第1主面側接続端子)が配置されている。   As shown in FIG. 1, a multilayer wiring board 10 is a coreless wiring board formed without including a core board, and is composed of four resin insulating layers 21, 22, 23, 24 and a conductor layer 26 made of copper are alternately laminated to have a multilayered wiring layer 30 (laminated structure). Each of the resin insulating layers 21 to 24 is formed using a build-up material mainly composed of a resin insulating material that is not imparted with photocurability, specifically, a cured product of a thermosetting epoxy resin. In the multilayer wiring board 10, a plurality of connection terminals 41 and 42 (first main surface side connection terminals) are arranged on the upper surface 31 side (first main surface side) of the wiring laminated portion 30.

図1及び図2に示されるように、本実施の形態の多層配線基板10では、配線積層部30の上面31側に配置される複数の接続端子41,42として、接続対象がICチップであるICチップ接続端子41と、接続対象がチップコンデンサであるコンデンサ接続端子42とが存在している。配線積層部30の上面31側において、複数のICチップ接続端子41は、基板中央部に設けられたチップ搭載領域43にてアレイ状に配置されている。また、コンデンサ接続端子42は、ICチップ接続端子41よりも面積の大きい接続端子であり、チップ搭載領域43よりも外周側に配置されている。   As shown in FIG. 1 and FIG. 2, in the multilayer wiring board 10 of the present embodiment, the connection target is an IC chip as the plurality of connection terminals 41 and 42 arranged on the upper surface 31 side of the wiring laminated portion 30. There are an IC chip connection terminal 41 and a capacitor connection terminal 42 whose connection target is a chip capacitor. On the upper surface 31 side of the wiring laminated portion 30, the plurality of IC chip connection terminals 41 are arranged in an array in a chip mounting region 43 provided in the central portion of the substrate. The capacitor connection terminal 42 is a connection terminal having a larger area than the IC chip connection terminal 41, and is disposed on the outer peripheral side of the chip mounting region 43.

一方、図1及び図3に示されるように、配線積層部30の下面32側(第2主面側)には、接続対象がマザーボード(母基板)であるLGA(ランドグリッドアレイ)用の複数の接続端子45(第2主面側接続端子としての母基板接続端子)がアレイ状に配置されている。これら母基板接続端子45は、上面31側のICチップ接続端子41及びコンデンサ接続端子42よりも面積の大きな接続端子である。   On the other hand, as shown in FIGS. 1 and 3, on the lower surface 32 side (second main surface side) of the wiring laminated portion 30, a plurality of LGA (land grid array) objects to be connected are mother boards (mother boards). Connection terminals 45 (mother substrate connection terminals as second main surface side connection terminals) are arranged in an array. These mother board connection terminals 45 are connection terminals having a larger area than the IC chip connection terminal 41 and the capacitor connection terminal 42 on the upper surface 31 side.

樹脂絶縁層21,22,23,24には、それぞれビア穴33及びフィルドビア導体34が設けられている。各ビア導体34は、いずれも同一方向に(図1では下面側から上面側に向かうに従って)拡径した形状を有し、各導体層26、ICチップ接続端子41、コンデンサ接続端子42、及び母基板接続端子45を相互に電気的に接続している。   Via holes 33 and filled via conductors 34 are provided in the resin insulating layers 21, 22, 23, and 24, respectively. Each via conductor 34 has a shape whose diameter is increased in the same direction (from the lower surface side to the upper surface side in FIG. 1), and each conductor layer 26, IC chip connection terminal 41, capacitor connection terminal 42, and mother The board connection terminals 45 are electrically connected to each other.

配線積層部30の上面31側において、最外層に露出する第4層の樹脂絶縁層24には開口部35が形成されるとともに、開口部35内には、上面の高さが樹脂絶縁層24の表面(基準面)よりも低くなるような状態でICチップ接続端子41が形成されている。また、ICチップ接続端子41は、主体をなす銅層の上面のみを銅以外のめっき層46(具体的には、ニッケル−金めっき層)で覆った構造を有している。そして、露出したICチップ接続端子41の上面に、図示しないはんだバンプを介してICチップがフリップチップ接続されるようになっている。   On the upper surface 31 side of the wiring laminated portion 30, an opening 35 is formed in the fourth resin insulating layer 24 exposed in the outermost layer, and the height of the upper surface is within the opening 35. The IC chip connection terminal 41 is formed in such a state that it is lower than the surface (reference surface). Further, the IC chip connection terminal 41 has a structure in which only the upper surface of the main copper layer is covered with a plating layer 46 (specifically, a nickel-gold plating layer) other than copper. The IC chip is flip-chip connected to the exposed upper surface of the IC chip connection terminal 41 via a solder bump (not shown).

コンデンサ接続端子42は、銅層を主体として構成されており、その上面の高さが樹脂絶縁層24の表面よりも高くなるように形成されている。つまり、本実施の形態の多層配線基板10において、ICチップ接続端子41の上面とコンデンサ接続端子42の上面との高さは異なっており、相対的に面積の大きいコンデンサ接続端子42の上面の高さが、相対的に面積の小さいICチップ接続端子41の上面の高さよりも高くなっている。また、コンデンサ接続端子42は、主体をなす銅層の上面及び側面を銅以外のめっき層47(具体的には、ニッケル−金めっき層)で覆った構造を有している。そして、コンデンサ接続端子42上には、図示しないはんだを介してチップコンデンサの外部端子が接続されるようになっている。   The capacitor connection terminal 42 is mainly composed of a copper layer, and is formed so that the height of the upper surface thereof is higher than the surface of the resin insulating layer 24. That is, in the multilayer wiring board 10 of the present embodiment, the height of the upper surface of the IC chip connection terminal 41 and the upper surface of the capacitor connection terminal 42 are different, and the height of the upper surface of the capacitor connection terminal 42 having a relatively large area. Is higher than the height of the upper surface of the IC chip connection terminal 41 having a relatively small area. In addition, the capacitor connection terminal 42 has a structure in which the upper surface and side surfaces of the main copper layer are covered with a plating layer 47 other than copper (specifically, a nickel-gold plating layer). On the capacitor connection terminal 42, an external terminal of the chip capacitor is connected via solder (not shown).

配線積層部30の下面32側において、露出状態にある最外層の樹脂絶縁層21には複数の開口部37が形成されるとともに、それら複数の開口部37に対応して母基板接続端子45が配置されている。具体的には、母基板接続端子45は、開口部37内に位置する下段金属導体部45aと、開口部37の開口縁を覆う状態で下段金属導体部45a及び樹脂絶縁層21の上に形成された上段金属導体部45bとからなる2段構造を有している。母基板接続端子45において、下段金属導体部45aはそれに接続されるビア導体34の端面よりも面積が大きく、上段金属導体部45bは下段金属導体部45aよりも面積が大きくなるよう形成されている。さらに、上段金属導体部45bは、主体をなす銅層の上面及び側面を銅以外のめっき層48(具体的には、ニッケル−金めっき層)で覆った構造を有している。そして、母基板接続端子45上には、図示しないはんだを介してマザーボードが接続されるようになっている。   On the lower surface 32 side of the wiring laminated portion 30, a plurality of openings 37 are formed in the outermost resin insulating layer 21 in an exposed state, and a mother board connection terminal 45 corresponds to the plurality of openings 37. Has been placed. Specifically, the mother board connection terminal 45 is formed on the lower metal conductor 45a and the resin insulating layer 21 so as to cover the lower metal conductor 45a located in the opening 37 and the opening edge of the opening 37. It has a two-stage structure consisting of the upper metal conductor portion 45b. In the mother board connection terminal 45, the lower metal conductor portion 45a has a larger area than the end surface of the via conductor 34 connected thereto, and the upper metal conductor portion 45b has a larger area than the lower metal conductor portion 45a. . Furthermore, the upper metal conductor portion 45b has a structure in which the upper surface and side surfaces of the copper layer constituting the main body are covered with a plating layer 48 (specifically, a nickel-gold plating layer) other than copper. A motherboard is connected to the mother board connection terminal 45 via solder (not shown).

また、配線積層部30の下面32側において、露出状態にある最外層の樹脂絶縁層21の外側主面21aから最も近い導体層26までに相当する厚さL1(本実施の形態では樹脂絶縁層21の厚さ)は、配線積層部30における他の樹脂絶縁層22〜24の厚さL2よりも大きくなっている。本実施の形態の多層配線基板10では、最外層の樹脂絶縁層21を厚く形成することにより、母基板接続端子45の下段金属導体部45aを開口部37の内側に位置させるようにしている。   Further, on the lower surface 32 side of the wiring laminated portion 30, the thickness L1 corresponding to the outermost main surface 21a of the outermost resin insulating layer 21 in the exposed state to the nearest conductor layer 26 (in this embodiment, the resin insulating layer) 21) is larger than the thickness L2 of the other resin insulating layers 22 to 24 in the wiring laminated portion 30. In the multilayer wiring board 10 of the present embodiment, the lower metal conductor portion 45 a of the mother board connection terminal 45 is positioned inside the opening 37 by forming the outermost resin insulating layer 21 thick.

上記構成の多層配線基板10は例えば以下の手順で作製される。   The multilayer wiring board 10 having the above configuration is manufactured, for example, by the following procedure.

先ず、ビルドアップ工程において、十分な強度を有する支持基板(ガラスエポキシ基板など)を準備し、その支持基板上に、樹脂絶縁層21〜24及び導体層26をビルドアップして配線積層部30を形成する。   First, in the build-up process, a support substrate (such as a glass epoxy substrate) having sufficient strength is prepared, and the resin insulating layers 21 to 24 and the conductor layer 26 are built-up on the support substrate to form the wiring laminated portion 30. Form.

詳述すると、図4に示されるように、支持基板50上に、エポキシ樹脂からなるシート状の絶縁樹脂基材を貼り付けて下地樹脂絶縁層51を形成することにより、支持基板50及び下地樹脂絶縁層51からなる基材52を得る。そして、図5に示されるように、基材52の片面(具体的には下地樹脂絶縁層51の上面)に、積層金属シート体54を配置する。ここで、下地樹脂絶縁層51上に積層金属シート体54を配置することにより、以降の製造工程で積層金属シート体54が下地樹脂絶縁層51から剥がれない程度の密着性が確保される。積層金属シート体54は、2枚の銅箔55,56(一対の金属箔)を剥離可能な状態で密着させてなる。具体的には、金属めっき(例えば、クロムめっき、ニッケルめっき、チタンめっき、またはこれらの複合めっき)を介して銅箔55、銅箔56が配置された積層金属シート体54が形成されている。   More specifically, as shown in FIG. 4, a base resin insulating layer 51 is formed by attaching a sheet-like insulating resin base material made of an epoxy resin on the support substrate 50, whereby the support substrate 50 and the base resin are formed. A base material 52 made of the insulating layer 51 is obtained. Then, as shown in FIG. 5, the laminated metal sheet body 54 is disposed on one surface of the base material 52 (specifically, the upper surface of the base resin insulating layer 51). Here, by arranging the laminated metal sheet body 54 on the base resin insulating layer 51, the adhesiveness to the extent that the laminated metal sheet body 54 is not peeled off from the base resin insulating layer 51 in the subsequent manufacturing process is ensured. The laminated metal sheet body 54 is formed by closely attaching two copper foils 55 and 56 (a pair of metal foils) in a peelable state. Specifically, the laminated metal sheet body 54 in which the copper foil 55 and the copper foil 56 are disposed is formed through metal plating (for example, chromium plating, nickel plating, titanium plating, or a composite plating thereof).

その後、母基板接続端子45における下段金属導体部45aを積層金属シート体54上に形成する(金属導体部形成工程)。具体的には、図6に示されるように、積層金属シート体54の上面にめっきレジスト形成用のドライフィルムをラミネートし、同ドライフィルムに対して露光及び現像を行う。その結果、下段金属導体部45aに対応した所定のパターンのめっきレジスト57を形成する。そして、めっきレジスト57を形成した状態で選択的に電解銅めっきを行って、積層金属シート体54上に下段金属導体部45aを形成した後、めっきレジスト57を剥離する(図7参照)。   Thereafter, the lower metal conductor portion 45a in the mother board connection terminal 45 is formed on the laminated metal sheet body 54 (metal conductor portion forming step). Specifically, as shown in FIG. 6, a dry film for forming a plating resist is laminated on the upper surface of the laminated metal sheet body 54, and the dry film is exposed and developed. As a result, a plating resist 57 having a predetermined pattern corresponding to the lower metal conductor portion 45a is formed. Then, electrolytic copper plating is selectively performed in a state where the plating resist 57 is formed to form the lower metal conductor portion 45a on the laminated metal sheet body 54, and then the plating resist 57 is peeled off (see FIG. 7).

その後、下段金属導体部45aが形成された積層金属シート体54を包むようにシート状の樹脂絶縁層21を配置し、樹脂絶縁層21を貼り付ける。(図8参照)。ここで、樹脂絶縁層21は、積層金属シート体54及び下段金属導体部45aと密着するとともに、積層金属シート体54の周囲領域において下地樹脂絶縁層51と密着することで、積層金属シート体54を封止する。   Thereafter, the sheet-like resin insulation layer 21 is disposed so as to wrap the laminated metal sheet body 54 on which the lower metal conductor portion 45a is formed, and the resin insulation layer 21 is attached. (See FIG. 8). Here, the resin insulating layer 21 is in close contact with the laminated metal sheet body 54 and the lower metal conductor portion 45a, and is in close contact with the base resin insulating layer 51 in the peripheral region of the laminated metal sheet body 54, whereby the laminated metal sheet body 54 is obtained. Is sealed.

そして、図9に示されるように、例えばエキシマレーザーやUVレーザーやCOレーザーなどを用いてレーザー加工を施すことによって樹脂絶縁層21の所定の位置(下段金属導体部45aの上部の位置)にビア穴33を形成する。次いで、過マンガン酸カリウム溶液などのエッチング液を用いて各ビア穴33内のスミアを除去するデスミア工程を行う。なお、デスミア工程としては、エッチング液を用いた処理以外に、例えばOプラズマによるプラズマアッシングの処理を行ってもよい。 Then, as shown in FIG. 9, for example, excimer laser, UV laser, CO 2 laser, or the like is used to perform laser processing to a predetermined position of the resin insulating layer 21 (position above the lower metal conductor portion 45 a). A via hole 33 is formed. Next, a desmear process is performed to remove smear in each via hole 33 using an etching solution such as a potassium permanganate solution. As the desmear process, in addition to treatment with an etchant, for example it may perform processing of plasma ashing using O 2 plasma.

デスミア工程の後、従来公知の手法に従って無電解銅めっき及び電解銅めっきを行うことで、各ビア穴33内にビア導体34を形成する。さらに、従来公知の手法(例えばセミアディティブ法)によってエッチングを行うことで、樹脂絶縁層21上に導体層26をパターン形成する(図10参照)。   After the desmear process, via conductors 34 are formed in the via holes 33 by performing electroless copper plating and electrolytic copper plating according to a conventionally known method. Furthermore, the conductor layer 26 is patterned on the resin insulating layer 21 by performing etching by a conventionally known method (for example, a semi-additive method) (see FIG. 10).

また、第2層〜第4層の樹脂絶縁層22〜24及び導体層26についても、上述した第1層の樹脂絶縁層21及び導体層26と同様の手法によって形成し、樹脂絶縁層21上に積層していく。そして、最外層の樹脂絶縁層24に対してレーザー穴加工を施すことにより複数の開口部35を形成する(図11参照)。次いで、過マンガン酸カリウム溶液やOプラズマなどにて各開口部35内のスミアを除去するデスミア工程を行う。 In addition, the second to fourth resin insulation layers 22 to 24 and the conductor layer 26 are also formed by the same method as that for the first resin insulation layer 21 and the conductor layer 26 described above. Laminate to. A plurality of openings 35 are formed by laser drilling the outermost resin insulation layer 24 (see FIG. 11). Next, a desmear process for removing smear in each opening 35 with a potassium permanganate solution, O 2 plasma, or the like is performed.

上述したビルドアップ工程によって、基材52上に積層金属シート体54、樹脂絶縁層21〜24及び導体層26を積層した配線積層体60を形成する。なお図11に示されるように、配線積層体60において積層金属シート体54上に位置する領域が、多層配線基板10の配線積層部30となる部分である。また、配線積層体60において開口部35によって露出される導体層26の一部がICチップ接続端子41となる。   By the build-up process described above, the wiring laminate 60 in which the laminated metal sheet body 54, the resin insulating layers 21 to 24, and the conductor layer 26 are laminated on the base material 52 is formed. As shown in FIG. 11, a region located on the laminated metal sheet body 54 in the wiring laminated body 60 is a portion that becomes the wiring laminated portion 30 of the multilayer wiring board 10. Further, a part of the conductor layer 26 exposed by the opening 35 in the wiring laminated body 60 becomes the IC chip connection terminal 41.

その後、無電解銅めっきを行い、樹脂絶縁層24の開口部35内及び各樹脂絶縁層21〜24を覆う全面めっき層を形成する(全面めっき工程)。なお、銅めっきはこのとき開口部35の内面にも形成される。   Thereafter, electroless copper plating is performed to form an entire plating layer covering the opening 35 of the resin insulating layer 24 and the resin insulating layers 21 to 24 (entire plating step). The copper plating is also formed on the inner surface of the opening 35 at this time.

そして、配線積層体60の上面にめっきレジスト形成用のドライフィルムをラミネートし、同ドライフィルムに対して露光及び現像を行うことにより、コンデンサ接続端子42に対応した箇所に開口部を有するパターンのめっきレジストを形成する。その後、めっきレジストを形成した状態で選択的にパターンめっきを行うことで複数の開口部35のうちの一部のものについてその内部にフィルドビア導体を形成するとともに、フィルドビア導体の上部にコンデンサ接続端子42を形成する(フィルドビア導体形成工程)。   Then, a plating resist forming dry film is laminated on the upper surface of the wiring laminate 60, and exposure and development are performed on the dry film, whereby a pattern having an opening at a location corresponding to the capacitor connection terminal 42 is obtained. A resist is formed. Thereafter, by selectively performing pattern plating in a state in which a plating resist is formed, a filled via conductor is formed inside a part of the plurality of openings 35, and the capacitor connection terminal 42 is provided above the filled via conductor. (Filled via conductor forming step).

フィルドビア導体形成工程後、図12に示すように、セミアディティブ法でパターニングすることによって、フィルドビア導体63及びコンデンサ接続端子42を残しつつ全面めっき層を除去する(全面めっき層除去工程)。   After the filled via conductor forming step, as shown in FIG. 12, the entire plated layer is removed while leaving the filled via conductor 63 and the capacitor connection terminal 42 by patterning by a semi-additive method (full plated layer removing step).

全面めっき層除去工程、配線積層体60をダイシング装置(図示略)により切断し、配線積層部30の周囲領域を除去する(切断工程)。この際、図12に示すように、配線積層部30とその周囲部64との境界(図12では矢印で示す境界)において、配線積層部30の下方にある基材52(支持基板50及び下地樹脂絶縁層51)ごと切断する。この切断によって、樹脂絶縁層21にて封止されていた積層金属シート体54の外縁部が露出した状態となる。つまり、周囲部64の除去によって、下地樹脂絶縁層51と樹脂絶縁層21との密着部分が失われる。この結果、配線積層部30と基材52とは積層金属シート体54のみを介して連結した状態となる。   The entire plating layer removing step, the wiring laminate 60 is cut by a dicing apparatus (not shown), and the peripheral region of the wiring laminated portion 30 is removed (cutting step). At this time, as shown in FIG. 12, at the boundary between the wiring laminated portion 30 and the surrounding portion 64 (the boundary indicated by the arrow in FIG. 12), the base material 52 (the support substrate 50 and the underlying substrate) located below the wiring laminated portion 30. The whole resin insulating layer 51) is cut. By this cutting, the outer edge portion of the laminated metal sheet 54 sealed with the resin insulating layer 21 is exposed. That is, due to the removal of the peripheral portion 64, the close contact portion between the base resin insulating layer 51 and the resin insulating layer 21 is lost. As a result, the wiring laminated portion 30 and the base material 52 are connected via the laminated metal sheet body 54 only.

ここで、図13に示されるように、積層金属シート体54における一対の銅箔55,56の界面にて剥離することで、配線積層部30から基材52を除去して配線積層部30(樹脂絶縁層21)の下面上にある銅箔55を露出させる(基材除去工程)。   Here, as shown in FIG. 13, by peeling at the interface between the pair of copper foils 55 and 56 in the laminated metal sheet body 54, the substrate 52 is removed from the wiring laminated portion 30, and the wiring laminated portion 30 ( The copper foil 55 on the lower surface of the resin insulating layer 21) is exposed (base material removing step).

その後、配線積層部30の下面32側において、下段金属導体部45aを残しつつ銅箔55を部分的にエッチング除去することによって、上段金属導体部45bを形成することにより、2段構造を有する母基板接続端子45を形成する(接続端子形成工程)。具体的には、配線積層部30の上面31及び下面32にエッチングレジスト形成用のドライフィルムをラミネートし、同ドライフィルムに対して露光及び現像を行う。これにより、配線積層部30の上面31は、表面全体を覆うエッチングレジストを形成するとともに、下面32には上段金属導体部45bに対応した箇所を覆う所定のパターンのエッチングレジストを形成する。この状態で、配線積層部30に対してエッチングを行って、不要な銅箔55を除去することで、下段金属導体部45a及び樹脂絶縁層21上に上段金属導体部45bを形成する。この結果、下段金属導体部45aと上段金属導体部45bとからなる2段構造の母基板接続端子45が形成される(図14参照)。   Thereafter, on the lower surface 32 side of the wiring laminated portion 30, the upper metal conductor portion 45b is formed by partially etching away the copper foil 55 while leaving the lower metal conductor portion 45a, thereby forming the mother having a two-stage structure. Substrate connection terminals 45 are formed (connection terminal formation step). Specifically, a dry film for forming an etching resist is laminated on the upper surface 31 and the lower surface 32 of the wiring laminated portion 30, and the dry film is exposed and developed. As a result, the upper surface 31 of the wiring laminated portion 30 forms an etching resist that covers the entire surface, and the lower surface 32 forms an etching resist having a predetermined pattern that covers a portion corresponding to the upper metal conductor portion 45b. In this state, the wiring laminated portion 30 is etched to remove the unnecessary copper foil 55, thereby forming the upper metal conductor portion 45 b on the lower metal conductor portion 45 a and the resin insulating layer 21. As a result, a mother board connection terminal 45 having a two-stage structure including the lower metal conductor portion 45a and the upper metal conductor portion 45b is formed (see FIG. 14).

その後、ICチップ接続端子41の表面、コンデンサ接続端子42の表面、母基板接続端子45の表面に対し、無電解ニッケルめっき、無電解金めっきを順次施すことにより、ニッケル−金めっき層46,47,48を形成する(めっき工程)。以上の工程を経ることで図1の多層配線基板10を製造する。   Thereafter, the surface of the IC chip connection terminal 41, the surface of the capacitor connection terminal 42, and the surface of the mother board connection terminal 45 are sequentially subjected to electroless nickel plating and electroless gold plating, whereby nickel-gold plating layers 46 and 47 are applied. , 48 are formed (plating process). The multilayer wiring board 10 of FIG. 1 is manufactured through the above steps.

従って、本実施の形態によれば以下の効果を得ることができる。   Therefore, according to the present embodiment, the following effects can be obtained.

(1)本実施の形態の多層配線基板10では、母基板接続端子45を構成する下段金属導体部45aは、露出状態にある最外層の樹脂絶縁層21に形成された開口部37内に位置し、母基板接続端子45を構成する上段金属導体部45bは、開口部37の開口縁を覆う状態で下段金属導体部45a及び樹脂絶縁層21の上に形成されている。このようにすると、下段金属導体部45aと樹脂絶縁層21との境界部分が上段金属導体部45bで塞がれた形状となるので、境界部分が補強され、境界部分に加わる応力が緩和される。また、境界部分が非直線的になることで、各種の薬液などが境界部分を介して基板内部に侵入しにくくなる。以上の結果、樹脂絶縁層21にクラックが発生するリスクが減り、従来に比べて多層配線基板10の信頼性が向上する。   (1) In the multilayer wiring board 10 of the present embodiment, the lower metal conductor 45a constituting the mother board connection terminal 45 is positioned in the opening 37 formed in the outermost resin insulation layer 21 in the exposed state. The upper metal conductor portion 45 b constituting the mother board connection terminal 45 is formed on the lower metal conductor portion 45 a and the resin insulating layer 21 so as to cover the opening edge of the opening portion 37. If it does in this way, since the boundary part of the lower metal conductor part 45a and the resin insulating layer 21 becomes a shape closed with the upper metal conductor part 45b, the boundary part is reinforced and the stress applied to the boundary part is relieved. . In addition, since the boundary portion is non-linear, various chemicals and the like are less likely to enter the substrate through the boundary portion. As a result, the risk of cracks occurring in the resin insulating layer 21 is reduced, and the reliability of the multilayer wiring board 10 is improved as compared with the conventional case.

(2)本実施の形態の多層配線基板10では、上段金属導体部45bは下段金属導体部45aよりも面積が大きく形成されているので、接続端子の強度や放熱性を高めることができる。また、下段金属導体部45aはそれに接続するビア導体34の端面よりも面積が大きくなっている。この場合、多層配線基板10の内側に配置されるビア導体34から段階的に導体部45a,45bの面積が大きくなるので、樹脂絶縁層21と導体部45a,45bとの間に作用する応力を効率よく分散させることができる。さらに、母基板接続端子45は下段金属導体部45a及び上段金属導体部45bからなる2段構造を有するので、接続端子45の厚みも厚くなり、配線基板自体の強度が向上する。このため、クラックの発生を確実に防止することができ、多層配線基板10の信頼性をより高めることができる。   (2) In the multilayer wiring board 10 of the present embodiment, the upper metal conductor portion 45b is formed to have a larger area than the lower metal conductor portion 45a, so that the strength and heat dissipation of the connection terminal can be increased. The lower metal conductor portion 45a has a larger area than the end face of the via conductor 34 connected thereto. In this case, since the areas of the conductor portions 45a and 45b gradually increase from the via conductor 34 disposed inside the multilayer wiring board 10, the stress acting between the resin insulating layer 21 and the conductor portions 45a and 45b is increased. It can be dispersed efficiently. Further, since the mother board connection terminal 45 has a two-stage structure composed of the lower metal conductor part 45a and the upper metal conductor part 45b, the thickness of the connection terminal 45 is increased, and the strength of the wiring board itself is improved. For this reason, generation | occurrence | production of a crack can be prevented reliably and the reliability of the multilayer wiring board 10 can be improved more.

(3)本実施の形態の多層配線基板10では、配線積層部30の下面32側において、露出状態にある最外層の樹脂絶縁層21の外側主面21aから最も近い導体層26までに相当する厚さL1は、配線積層部30における他の樹脂絶縁層22〜24の厚さL2よりも大きくなっている。このようにすると、下段金属導体部45aが最外層の樹脂絶縁層21に形成された開口部37内に位置するように母基板接続端子45を確実に形成することができる。   (3) In the multilayer wiring board 10 of the present embodiment, on the lower surface 32 side of the wiring laminated portion 30, this corresponds to from the outer principal surface 21 a of the outermost resin insulating layer 21 in the exposed state to the nearest conductor layer 26. The thickness L1 is larger than the thickness L2 of the other resin insulating layers 22 to 24 in the wiring laminated portion 30. In this way, the mother board connection terminal 45 can be reliably formed so that the lower metal conductor portion 45a is located in the opening 37 formed in the outermost resin insulating layer 21.

(4)本実施の形態の多層配線基板10において、母基板接続端子45の上段金属導体部45bは、主体をなす銅層の上面及び側面をめっき層48で覆った構造を有しているので、上段金属導体部45bを覆うようにはんだを形成することができる。そのため、部品接合時には好適な形状のはんだフィレットが形成されやすくなる。   (4) In the multilayer wiring board 10 of the present embodiment, the upper metal conductor portion 45b of the mother board connection terminal 45 has a structure in which the upper surface and side surfaces of the main copper layer are covered with the plating layer 48. The solder can be formed so as to cover the upper metal conductor portion 45b. Therefore, a solder fillet having a suitable shape is easily formed at the time of component joining.

(5)本実施の形態の多層配線基板10では、配線積層部30の上面31側に形成される複数の接続端子41,42は、接続対象の種類ごとに上面の高さが異なっている。具体的には、複数の接続端子41,42として、接続対象がICチップであるICチップ接続端子41と、接続対象がチップコンデンサであるコンデンサ接続端子42が存在しており、ICチップ接続端子41は、最外層にて露出する樹脂絶縁層24の表面よりも低く、コンデンサ接続端子42は、樹脂絶縁層24の表面よりも高くなっている。このようにすると、ICチップをフリップチップ接続するためのはんだバンプをICチップ接続端子41上に確実に形成することができ、ICチップを確実に接続することができる。また、チップコンデンサを接続するためのはんだをコンデンサ接続端子42に確実に形成することができ、チップコンデンサを確実に接続することができる。   (5) In the multilayer wiring board 10 of the present embodiment, the plurality of connection terminals 41 and 42 formed on the upper surface 31 side of the wiring laminated portion 30 have different upper surface heights for each type of connection target. Specifically, an IC chip connection terminal 41 whose connection target is an IC chip and a capacitor connection terminal 42 whose connection target is a chip capacitor are present as the plurality of connection terminals 41 and 42. Is lower than the surface of the resin insulating layer 24 exposed at the outermost layer, and the capacitor connection terminal 42 is higher than the surface of the resin insulating layer 24. In this way, solder bumps for flip chip connection of the IC chip can be reliably formed on the IC chip connection terminal 41, and the IC chip can be reliably connected. Moreover, the solder for connecting the chip capacitor can be reliably formed on the capacitor connection terminal 42, and the chip capacitor can be reliably connected.

(6)本実施の形態の多層配線基板10において、配線積層部30の上面31側に露出する樹脂絶縁層24には開口部35が形成されるとともに、開口部35内には、上面の高さが樹脂絶縁層24の表面よりも低くなるような状態でICチップ接続端子41が形成されている。このようにすると、ICチップ接続端子41上の開口部35内にてはんだボールを容易に位置決めすることができ、ICチップ接続端子41上におけるはんだバンプの形成をより確実に行うことができる。   (6) In the multilayer wiring board 10 of the present embodiment, an opening 35 is formed in the resin insulating layer 24 exposed to the upper surface 31 side of the wiring laminated portion 30, and the upper surface has a high height in the opening 35. The IC chip connection terminal 41 is formed in such a state that the height is lower than the surface of the resin insulating layer 24. If it does in this way, a solder ball can be easily positioned in opening 35 on IC chip connection terminal 41, and formation of a solder bump on IC chip connection terminal 41 can be performed more certainly.

(7)本実施の形態の多層配線基板10において、コンデンサ接続端子42は、その上面及び側面にはんだを付着させることができる。よって、部品接合時には比較的大きくて好適形状のはんだフィレットを確実に形成することができる。また、ICチップ接続端子41は、その上面をめっき層46で覆った構造を有しているので、ICチップ接続端子41の上面にはんだバンプを確実に形成することができる。ここで、コンデンサ接続端子42の間隔はICチップ接続端子41の間隔よりも広く、またコンデンサ接続端子42はサイズが比較的大きいため、コンデンサ接続端子42の上面及び側面に形成されたはんだによってチップコンデンサを十分な強度で確実にはんだ接続することができる。一方、ICチップ接続端子41の間隔は狭いため、ICチップ接続端子41の横方向(基板平面方向)にはんだバンプが膨らむと、端子間のショートが問題となる。これに対して本実施形態では、ICチップ接続端子41の上面のみにはんだバンプが形成されていて、はんだバンプが横方向に膨らむことがないので、はんだバンプを介した端子間のショートを回避することができる。   (7) In the multilayer wiring board 10 of the present embodiment, the capacitor connection terminal 42 can have solder attached to the upper surface and side surfaces thereof. Therefore, it is possible to reliably form a solder fillet having a relatively large and suitable shape at the time of component joining. In addition, since the IC chip connection terminal 41 has a structure in which the upper surface thereof is covered with the plating layer 46, solder bumps can be reliably formed on the upper surface of the IC chip connection terminal 41. Here, the interval between the capacitor connection terminals 42 is wider than the interval between the IC chip connection terminals 41, and the capacitor connection terminals 42 are relatively large in size, so that the chip capacitors are formed by the solder formed on the upper and side surfaces of the capacitor connection terminals 42. Can be securely connected with sufficient strength. On the other hand, since the intervals between the IC chip connection terminals 41 are narrow, if the solder bumps swell in the lateral direction (substrate plane direction) of the IC chip connection terminals 41, a short circuit between the terminals becomes a problem. On the other hand, in the present embodiment, solder bumps are formed only on the upper surface of the IC chip connection terminal 41, and the solder bumps do not bulge in the lateral direction, so a short circuit between the terminals via the solder bumps is avoided. be able to.

(8)本実施の形態の多層配線基板10において、複数の樹脂絶縁層21〜24は、光硬化性を付与していない樹脂絶縁材料の硬化物を主体とした同じビルドアップ材を用いて形成されている。つまり、最外層の樹脂絶縁層21,24は、内層の樹脂絶縁層22,23と同じ絶縁性に優れたビルドアップ材で形成されている。このため、各接続端子41,42,45の端子間隔を狭くすることができ、多層配線基板10の高集積化が可能となる。また、多層配線基板10では、最外層にソルダーレジストが形成されていないので、各樹脂絶縁層21〜24とソルダーレジストとの熱膨張係数差に起因して生じる多層配線基板10の反りを回避することができる。   (8) In the multilayer wiring board 10 of the present embodiment, the plurality of resin insulation layers 21 to 24 are formed using the same build-up material mainly composed of a cured product of a resin insulation material not imparted with photocurability. Has been. That is, the outermost resin insulation layers 21 and 24 are formed of the same build-up material having the same insulating properties as the inner resin insulation layers 22 and 23. For this reason, the terminal interval of each connection terminal 41, 42, 45 can be narrowed, and the multi-layer wiring board 10 can be highly integrated. Moreover, in the multilayer wiring board 10, since the solder resist is not formed in the outermost layer, the warp of the multilayer wiring board 10 caused by the difference in thermal expansion coefficient between the resin insulating layers 21 to 24 and the solder resist is avoided. be able to.

なお、本発明の実施の形態は以下のように変更してもよい。   In addition, you may change embodiment of this invention as follows.

・上記実施の形態の多層配線基板10では、母基板接続端子45の端子外面は平坦面であったが、これに限定されるものではない。例えば、図15に示される多層配線基板10Aのように、母基板接続端子45の端子外面45cを凹形状となるように形成してもよい。この多層配線基板10Aでは、母基板接続端子45を構成する上段金属導体部45bはリング状であり、下段金属導体部45aと樹脂絶縁層21との境界を覆うように配置されている。このように母基板接続端子45を構成しても、下段金属導体部45aと樹脂絶縁層21との境界部分が上段金属導体部45bで塞がれるので、境界部分に加わる応力が緩和される。このため、樹脂絶縁層21にクラックが発生するリスクを減らすことができ、多層配線基板10Aの信頼性が向上する。さらに、母基板接続端子45の端子外面45cにおけるはんだとの接触面積が増すため、はんだ接続の強度を高めることができる。また、図16に示される多層配線基板10Bのように、凹形状の端子外面45cにおける最深部が下段金属導体部45aに至るように母基板接続端子45を形成してもよい。このように母基板接続端子45を構成すると、端子外面45cにおけるはんだとの接触面積が増すため、はんだ接続の強度を高めることができる。また、母基板接続端子45の端子外面45cを凹形状とすると、はんだボールや接続ピンの位置決めを容易に行うことが可能となる。   In the multilayer wiring board 10 of the above embodiment, the outer surface of the mother board connection terminal 45 is a flat surface, but is not limited to this. For example, like the multilayer wiring board 10A shown in FIG. 15, the terminal outer surface 45c of the mother board connection terminal 45 may be formed in a concave shape. In this multilayer wiring board 10A, the upper metal conductor portion 45b constituting the mother board connection terminal 45 has a ring shape and is arranged so as to cover the boundary between the lower metal conductor portion 45a and the resin insulating layer 21. Even if the mother board connection terminal 45 is configured in this manner, the boundary portion between the lower metal conductor portion 45a and the resin insulating layer 21 is blocked by the upper metal conductor portion 45b, so that the stress applied to the boundary portion is relieved. For this reason, the risk of cracks occurring in the resin insulating layer 21 can be reduced, and the reliability of the multilayer wiring board 10A is improved. Furthermore, since the contact area with the solder on the terminal outer surface 45c of the mother board connection terminal 45 is increased, the strength of the solder connection can be increased. Further, as in the multilayer wiring board 10B shown in FIG. 16, the mother board connection terminal 45 may be formed so that the deepest part of the concave terminal outer surface 45c reaches the lower metal conductor part 45a. When the mother board connection terminal 45 is configured in this manner, the contact area with the solder on the terminal outer surface 45c increases, so that the strength of the solder connection can be increased. In addition, when the terminal outer surface 45c of the mother board connection terminal 45 has a concave shape, it is possible to easily position the solder balls and the connection pins.

・上記実施の形態の多層配線基板10,10A,10Bにおいて、上面31側に形成されるコンデンサ接続端子42をセミアディティブ法にてパターン形成していたが、サブトラクティブ法にてパターン形成してもよい。なおこの場合、図17に示す多層配線基板10Cのように、コンデンサ接続端子42Aは、上面よりも下面のほうが面積の大きい断面台形状に形成される。このようにすると、コンデンサ接続端子42Aと樹脂絶縁層24との接触面積が増すため、端子強度を十分に確保することができる。また、多層配線基板10Cのように、開口部35内に充填されたフィルドビア導体63によってICチップ接続端子41Aを形成してもよい。さらに、図18に示す多層配線基板10Dのように、ICチップ接続端子41と同様に、開口部35内にて露出するようコンデンサ接続端子42Bを形成してもよい。なお、このコンデンサ接続端子42Bは、ICチップ接続端子41とほぼ同じ高さとなる。   In the multilayer wiring boards 10, 10 </ b> A, and 10 </ b> B of the above embodiment, the capacitor connection terminals 42 formed on the upper surface 31 side are patterned by the semi-additive method, but even if the patterns are formed by the subtractive method Good. In this case, as in the multilayer wiring board 10C shown in FIG. 17, the capacitor connection terminal 42A is formed in a trapezoidal cross section having a larger area on the lower surface than on the upper surface. By doing so, the contact area between the capacitor connection terminal 42A and the resin insulating layer 24 is increased, so that the terminal strength can be sufficiently ensured. Further, like the multilayer wiring board 10C, the IC chip connection terminal 41A may be formed by the filled via conductor 63 filled in the opening 35. Further, like the multilayer wiring board 10 </ b> D shown in FIG. 18, similarly to the IC chip connection terminal 41, the capacitor connection terminal 42 </ b> B may be formed so as to be exposed in the opening 35. The capacitor connection terminal 42B has substantially the same height as the IC chip connection terminal 41.

・上記実施の形態では、複数の樹脂絶縁層21〜24に形成される複数の導体層26は、下面32側から上面31側に向かうに従って拡径したビア導体34により互いに接続されていたが、これに限定されるものではない。複数の樹脂絶縁層21〜24に形成されるビア導体34は同一方向に拡径した形状であればよく、上面31側から下面32側に向かうに従って拡径したビア導体により、複数の導体層26を互いに接続してもよい。   In the above embodiment, the plurality of conductor layers 26 formed on the plurality of resin insulation layers 21 to 24 are connected to each other by the via conductors 34 whose diameter increases from the lower surface 32 side toward the upper surface 31 side. It is not limited to this. The via conductors 34 formed in the plurality of resin insulation layers 21 to 24 may have a shape whose diameter is increased in the same direction, and the plurality of conductor layers 26 are formed by via conductors whose diameter is increased from the upper surface 31 side toward the lower surface 32 side. May be connected to each other.

・上記実施の形態では、各接続端子41,42,45を被覆するめっき層46,47,48は、ニッケル−金めっき層であったが、銅以外のめっき層であればよく、例えば、ニッケル−パラジウム−金めっき層などの他のめっき層に変更してもよい。   In the above embodiment, the plating layers 46, 47, 48 covering the connection terminals 41, 42, 45 are nickel-gold plating layers, but may be any plating layer other than copper. -You may change into other plating layers, such as a palladium- gold plating layer.

次に、前述した実施の形態によって把握される技術的思想を以下に列挙する。   Next, the technical ideas grasped by the embodiment described above are listed below.

(1)同じ樹脂絶縁材料を主体とする複数の樹脂絶縁層及び複数の導体層を交互に積層して多層化した積層構造体を有し、前記積層構造体の第1主面側には複数の第1主面側接続端子が配置され、前記積層構造体の第2主面側には複数の第2主面側接続端子が配置され、前記複数の導体層は、前記複数の樹脂絶縁層に形成され、前記第1主面側または前記第2主面側に向うに従って拡径したビア導体により接続されている多層配線基板であって、前記積層構造体の前記第2主面側において露出状態にある最外層の樹脂絶縁層には複数の開口部が形成され、前記複数の第2主面側接続端子は、前記開口部内に位置する下段金属導体部と、前記開口部の開口縁を覆う状態で前記下段金属導体部及び前記最外層の樹脂絶縁層の上に形成された上段金属導体部とからなる2段構造を有し、前記上段金属導体部は、主体をなす銅層の上面及び側面を銅以外のめっき層で覆った構造を有することを特徴とする多層配線基板。   (1) It has a laminated structure in which a plurality of resin insulating layers mainly composed of the same resin insulating material and a plurality of conductor layers are alternately laminated to form a multilayer structure, and there are a plurality of laminated structures on the first main surface side. First main surface side connection terminals are arranged, a plurality of second main surface side connection terminals are arranged on the second main surface side of the laminated structure, and the plurality of conductor layers are formed of the plurality of resin insulation layers. Formed on the first main surface side or connected to the first main surface side or the second main surface side by a via conductor whose diameter is increased, and is exposed on the second main surface side of the multilayer structure. A plurality of openings are formed in the outermost resin insulation layer in a state, and the plurality of second main surface side connection terminals are formed by connecting a lower metal conductor portion located in the opening and an opening edge of the opening. An upper metal formed on the lower metal conductor and the outermost resin insulation layer in a covered state Has a two-stage structure comprising a conductive portion, wherein the upper metal conductor portion, a multilayer wiring board characterized by having a structure to cover the upper and side surfaces of the copper layer constituting the principal plating layer other than copper.

(2)技術的思想(1)において、前記第1主面側には、接続対象の異なる少なくとも2種類の第1主面側接続端子が存在するとともに、前記第1主面側接続端子の上面の高さが、前記接続対象の種類ごとに異なっていることを特徴とする多層配線基板。   (2) In the technical idea (1), at least two types of first main surface side connection terminals having different connection objects exist on the first main surface side, and an upper surface of the first main surface side connection terminal. The multilayer wiring board is characterized in that the height of the wiring board is different for each type of connection object.

(3)同じ樹脂絶縁材料を主体とする複数の樹脂絶縁層及び複数の導体層を交互に積層して多層化した積層構造体を有し、前記積層構造体の第1主面側には複数の第1主面側接続端子が配置され、前記積層構造体の第2主面側には複数の第2主面側接続端子が配置され、前記複数の導体層は、前記複数の樹脂絶縁層に形成され、前記第1主面側または前記第2主面側に向うに従って拡径したビア導体により接続されている多層配線基板の製造方法であって、金属箔を剥離可能な状態で片面に積層配置してなる支持基材を準備するとともに、前記第1主面側接続端子または前記第2主面側接続端子における下段金属導体部を前記金属箔上に形成する金属導体部形成工程と、前記金属導体部形成工程後、複数の樹脂絶縁層及び複数の導体層を交互に積層して多層化することにより積層構造体を形成するビルドアップ工程と、前記ビルドアップ工程後、前記支持基材を除去して前記金属箔を露出させる基材除去工程と、前記ビルドアップ工程後、前記下段金属導体部を残しつつ前記積層構造体における前記金属箔を選択的にエッチング除去して上段金属導体部を形成することにより、2段構造を有する前記第2主面側接続端子を形成する接続端子形成工程とを含むことを特徴とする多層配線基板の製造方法。   (3) It has a laminated structure in which a plurality of resin insulating layers mainly composed of the same resin insulating material and a plurality of conductor layers are alternately laminated to form a multilayer structure, and a plurality of layers are provided on the first main surface side of the laminated structure. First main surface side connection terminals are arranged, a plurality of second main surface side connection terminals are arranged on the second main surface side of the laminated structure, and the plurality of conductor layers are formed of the plurality of resin insulation layers. A multilayer wiring board formed by connecting via conductors whose diameter is increased toward the first main surface or the second main surface, the metal foil being peelable on one side A metal conductor part forming step of preparing a support base material formed by laminating and forming a lower metal conductor part in the first main surface side connection terminal or the second main surface side connection terminal on the metal foil; After the metal conductor portion forming step, a plurality of resin insulation layers and a plurality of conductor layers are alternated. A buildup process for forming a laminated structure by stacking and multilayering, a base material removal process for removing the support base material and exposing the metal foil after the buildup process, and after the buildup process The second main surface side connection terminal having a two-stage structure is formed by selectively etching away the metal foil in the multilayer structure while leaving the lower metal conductor part to form an upper metal conductor part. The manufacturing method of the multilayer wiring board characterized by including the connection terminal formation process to perform.

10,10A〜10D…多層配線基板
21〜24…樹脂絶縁層
21a…外側主面
26…導体層
30…積層構造体としての配線積層部
31…第1主面としての上面
32…第2主面としての下面
34…ビア導体
37…開口部
41,41A…第1主面側接続端子としてのICチップ接続端子
42,42A,42B…第1主面側接続端子としてのコンデンサ接続端子
45…第2主面側接続端子としての母基板接続端子
45a…下段金属導体部
45b…上段金属導体部
45c…端子外面
DESCRIPTION OF SYMBOLS 10,10A-10D ... Multilayer wiring board 21-24 ... Resin insulating layer 21a ... Outer main surface 26 ... Conductor layer 30 ... Wiring laminated part as laminated structure 31 ... Upper surface as 1st main surface 32 ... 2nd main surface 34 ... Via conductor 37 ... Opening 41, 41A ... IC chip connection terminal as first main surface side connection terminal 42, 42A, 42B ... Capacitor connection terminal as first main surface side connection terminal 45 ... Second Mother board connection terminal 45a as a main surface side connection terminal Lower metal conductor part 45b Upper metal conductor part 45c Terminal outer surface

Claims (4)

同じ樹脂絶縁材料を主体とする複数の樹脂絶縁層及び複数の導体層を交互に積層して多層化した積層構造体を有し、前記積層構造体の第1主面側には複数の第1主面側接続端子が配置され、前記積層構造体の第2主面側には複数の第2主面側接続端子が配置され、前記複数の導体層は、前記複数の樹脂絶縁層に形成され、前記第1主面側または前記第2主面側に向うに従って拡径したビア導体により接続されている多層配線基板であって、
前記積層構造体の前記第2主面側において露出状態にある最外層の樹脂絶縁層には複数の開口部が形成され、
前記複数の第2主面側接続端子は、前記開口部内に位置する下段金属導体部と、前記開口部の開口縁を覆う状態で前記下段金属導体部及び前記最外層の樹脂絶縁層の上に形成された上段金属導体部とからなる2段構造を有し、
前記上段金属導体部は前記下段金属導体部よりも面積が大きく、前記下段金属導体部はそれに接続するビア導体の端面よりも面積が大きい
ことを特徴とする多層配線基板。
A laminated structure in which a plurality of resin insulation layers mainly composed of the same resin insulation material and a plurality of conductor layers are alternately laminated to form a multilayer structure; Main surface side connection terminals are arranged, a plurality of second main surface side connection terminals are arranged on the second main surface side of the multilayer structure, and the plurality of conductor layers are formed on the plurality of resin insulation layers. A multilayer wiring board connected by via conductors whose diameter is increased toward the first main surface side or the second main surface side,
A plurality of openings are formed in the outermost resin insulation layer in an exposed state on the second main surface side of the multilayer structure,
The plurality of second main surface side connection terminals are disposed on the lower metal conductor portion and the outermost resin insulation layer in a state of covering the opening edge of the opening and the lower metal conductor portion located in the opening portion. the two-stage structure consisting of formed an upper metal conductor portion possess,
The multilayer wiring board, wherein the upper metal conductor portion has an area larger than the lower metal conductor portion, and the lower metal conductor portion has an area larger than an end surface of a via conductor connected thereto .
前記積層構造体の前記第2主面側において露出状態にある最外層の樹脂絶縁層の外側主面から最も近い導体層までに相当する厚さは、前記積層構造体における他の樹脂絶縁層の厚さよりも大きいことを特徴とする請求項1に記載の多層配線基板。   The thickness corresponding to the outermost main surface of the outermost resin insulation layer that is exposed on the second main surface side of the laminated structure to the nearest conductor layer is that of the other resin insulation layers in the laminated structure. The multilayer wiring board according to claim 1, wherein the multilayer wiring board is larger than the thickness. 前記2段構造を有する前記複数の第2主面側接続端子は、前記第2主面側接続端子の端子外面が凹形状であることを特徴とする請求項1または2に記載の多層配線基板。 Wherein the plurality of second main surface side connecting terminals having the two-stage structure, prior Symbol multilayer wiring according to claim 1 or 2 terminal outer surface of the second main surface side connecting terminal is characterized in that a concave substrate. 前記2段構造を有する前記複数の第2主面側接続端子は、前記第2主面側接続端子の端子外面が凹形状であるとともに、前記端子外面の最深部が前記下段金属導体部に至っていることを特徴とする請求項1または2に記載の多層配線基板。 Wherein the plurality of second main surface side connecting terminals having the two-stage structure, together with the terminal outer surface of the front Stories second main surface side connecting terminal is concave, the deepest portion of the terminal outer surface to said lower metal conductor portion The multilayer wiring board according to claim 1 , wherein the multilayer wiring board is formed.
JP2009296913A 2009-12-28 2009-12-28 Multilayer wiring board Expired - Fee Related JP5269757B2 (en)

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