JP5249718B2 - Manufacturing method of solar cell - Google Patents

Description

  The present invention relates to a method for manufacturing a solar cell, and more particularly to a method for manufacturing a thin-film solar cell in which a power generation layer is formed by film formation.

In general, when sputtering a zinc oxide film (such as a GZO film that is GaO-doped ZnO) that becomes a transparent conductive film that is a part of a constituent film of a thin film solar cell, oxygen ( A device has been devised so as to form a stable oxide film excellent in permeability by slightly mixing O ₂ ) gas (see, for example, Patent Documents 1 and 2).

For example, Patent Document 1 describes that the conductivity is continuously changed by changing the oxygen flow rate during sputtering of zinc oxide.
On the other hand, in Patent Document 2, in order to prevent degassing consisting of adsorbed molecules separated from the wall surface of the vacuum vessel during film formation from entering the reflective metal film to be formed into a film and reducing the reflectance, It describes that film formation is performed under a reduced pressure atmosphere with a base pressure of 4 × 10 ⁻⁴ Pa.

When the flow rate of the supplied oxygen gas is small, the light transmittance in the formed GZO film decreases on the long wavelength side where the wavelength is 600 nm or more, whereas, when the flow rate of the supplied oxygen gas is large, The wavelength decreases on the short wavelength side of 400 nm or less.
For this reason, it has been found that an appropriate oxygen gas flow rate (concentration) is required when the GZO film is formed by sputtering.
JP 2003-273134 A JP 2003-174177 A

  On the other hand, in the case of mass production of solar cells, after performing the film forming process for several tens of hours, in other words, after performing the film forming process for several hundred to several thousand solar cells, In order to replace the target, maintenance is performed with the vacuum chamber opened.

  As described above, after performing maintenance with the sputtering apparatus opened to the atmosphere, it takes time until the characteristics of the GZO film are stably formed, that is, the performance of the solar cell is stabilized, with the cause unclear. In short, there was a problem that the performance of the solar cell module produced during that time was in a low state.

  The present invention has been made to solve the above-described problems, and provides a method for manufacturing a solar cell that can stabilize the power generation performance of the solar cell and improve the yield at the time of manufacturing the solar cell. The purpose is to do.

In order to achieve the above object, the present invention provides the following means.
The method for manufacturing a solar cell according to the present invention includes an exhaust process for increasing the degree of vacuum by exhausting gas inside a container that is closed after being opened to the atmosphere, and a mixed gas containing oxygen atoms in an inert gas by installing a substrate. A solar cell is formed by sputtering method by filling the exhausted container with a mixed gas in which a predetermined concentration is mixed and applying a voltage between the target arranged in the container and the substrate. A main film forming step of forming a film on the substrate; and before the main film forming step, the mixed gas in which the concentration of the mixed gas in the mixed gas is lower than the predetermined concentration is introduced into the container. And an initial film forming step for forming the film on the substrate only for a predetermined period.

According to the present invention, oxygen gas or water vapor gas adsorbed on the inner surface of the container at the time of opening to the atmosphere is desorbed from the inner surface of the container in the initial film-forming process, so the mixed gas filled in the container in the process to, or oxygen gas desorption, oxygen gas generated by the decomposition of water vapor gas mix. That is, the inside of the container in the initial film forming process becomes an atmosphere of an inert gas and a mixed gas mixed at a ratio close to the mixed gas in the main film forming process, thereby filling the inside of the container.
Therefore, the difference in characteristics between the film formed in the initial film forming process and the film formed in the main film forming process is reduced.

Furthermore, after the initial film forming process is continued for a predetermined number of processing substrates (predetermined period), in other words, when the amount of oxygen gas or water vapor gas desorbed from the inner surface of the container decreases, the film forming process is switched to this film forming process. Therefore, the mixing ratio between the inert gas and the oxygen atoms of the mixed gas in the mixed gas filled in the container is substantially constant between the initial film forming process and the main film forming process.

  In the said invention, it is desirable to increase the flow volume of the said mixed gas supplied to the said container with progress of time in the said initial film forming process.

According to the present invention, even if the amount of oxygen gas, water vapor gas or the like desorbed from the inner surface of the container in the initial film forming process gradually decreases with the number of processed substrates (elapsed time), the mixed gas supplied to the container Therefore, the mixing ratio of the inert gas and the oxygen atoms in the mixed gas in the mixed gas filled in the container becomes substantially constant.
Furthermore, the mixing ratio of the inert gas in the mixed gas and the oxygen atoms in the mixed gas can be accurately adjusted as compared with the method of increasing the flow rate of the mixed gas stepwise.

  In the above invention, it is desirable that the flow rate of the mixed gas supplied to the container is increased stepwise in the initial film forming step.

According to the present invention, even if the amount of oxygen gas or the like desorbed from the inner surface of the container in the initial film forming process gradually decreases with the passage of time, the flow rate of the mixed gas supplied to the container is the number of processed substrates (time Therefore, the mixing ratio of the inert gas and the oxygen atoms of the mixed gas in the mixed gas filled in the container is substantially constant between the initial film forming process and the main film forming process.
Furthermore, the mixing ratio of the inert gas and the mixed gas in the mixed gas can be easily adjusted as compared with the method of increasing the flow rate of the mixed gas with the passage of time.

  In the above invention, the mixed gas is preferably oxygen gas.

According to the present invention, since the oxygen gas (O ₂ ) is composed only of oxygen (O), oxygen (O) can be efficiently supplied to the region between the target and the substrate.

  In the above invention, the mixed gas is preferably carbon dioxide gas.

According to the present invention, oxygen (O) can be supplied to the region between the target and the substrate by decomposing carbon dioxide gas (CO ₂ ).
Furthermore, carbon monoxide (CO) and carbon (C) produced simultaneously with oxygen (O) react with excess oxygen (O) to produce carbon dioxide (CO ₂ ) and carbon monoxide (CO). Therefore, the concentration of oxygen (O) on the surface on which the film is formed is kept more constant.

  According to the method for manufacturing a solar cell of the present invention, a mixed gas in which the concentration of mixed gas containing oxygen atoms in the mixed gas is reduced is supplied to the inside of the container, and a film is formed on the substrate for a predetermined number of substrates (predetermined period) After forming the film only for a period of time, by forming a film on the substrate using a mixed gas containing a mixed gas of a predetermined concentration, the characteristics of the transparent conductive film are stabilized, so that the power generation performance of the solar cell is stabilized. There is an effect that it is possible to improve the yield at the time of manufacturing the solar cell.

[First Embodiment]
Hereinafter, a method for manufacturing a solar cell according to the first embodiment of the present invention will be described with reference to FIGS.

The schematic diagram explaining the structure of the solar cell manufactured by the manufacturing method of the solar cell of this embodiment is shown by FIG.
The solar cell panel 1 described in the present embodiment is a silicon-based solar cell panel provided with a solar cell module (solar cell) 2. The solar cell panel 1 includes a substrate 11 and a transparent electrode as shown in FIG. A layer 12, a photoelectric conversion layer 13, and a back electrode layer 14 are provided.

Silicon-based is a general term including silicon (Si), silicon carbide (SiC), and silicon germanium (SiGe).
The crystalline silicon system means an amorphous silicon system, that is, a silicon system other than the amorphous silicon system, and includes microcrystalline silicon and polycrystalline silicon systems.

Next, the manufacturing process of the solar cell panel 1 having the above-described configuration will be described.
In the present embodiment, an example of a solar cell panel 1 in which a single-layer amorphous silicon thin film is formed as the photoelectric conversion layer 13 on a glass substrate that is the substrate 11 will be described.

That is, in the present embodiment, the photoelectric conversion layer 13 will be described as applied to a laminate of an amorphous p layer 22A, an amorphous i layer 23A, and an amorphous n layer 24A.
Further, the back electrode layer 14 will be described by applying it to a laminate of a first back electrode layer (layer) 14A and a second back electrode layer 14B.

FIG. 2 is a schematic diagram for explaining a manufacturing process of the solar cell of FIG.
First, as shown in FIG. 2, it is desirable that a soda float glass substrate is prepared as the substrate 11, and the end surface of the substrate 11 is subjected to corner chamfering or R chamfering.
As the substrate 11, for example, one having a side exceeding 1 m (for example, 1.4 m × 1.1 m in length and width) and a thickness of 3.5 mm to 4.5 mm can be exemplified. The corner chamfering or the like may or may not be performed, and is not particularly limited.

FIG. 3 is a schematic diagram illustrating a process of forming a transparent conductive layer in the manufacturing process of the solar cell panel of FIG.
And as shown in FIG. 3, the transparent electrode layer 12 is formed into a film on the board | substrate 11 on about 500 degreeC temperature conditions using a thermal CVD apparatus.
The transparent electrode layer 12 is a transparent electrode film mainly composed of a tin oxide film (SnO ₂ ), and has a film thickness from about 500 nm to about 800 nm. During this film forming process, a texture with appropriate irregularities is formed on the surface of the tin oxide film.

Note that an alkali barrier film (not shown) may be formed between the substrate 11 and the transparent electrode layer 12 or may not be formed, and is not particularly limited.
The alkali barrier film is formed, for example, by forming a silicon oxide film (SiO ₂ ) under a temperature condition of about 500 ° C. using a thermal CVD apparatus. The film thickness of the silicon oxide film can be about 50 nm to about 150 nm.

FIG. 4 is a schematic diagram illustrating a process of forming a transparent conductive layer groove in the manufacturing process of the solar cell panel of FIG.
When the transparent electrode layer 12 is formed, a transparent electrode layer groove 15 is formed as shown in FIG.
Specifically, the substrate 11 is placed on an XY table, and the first harmonic (1064 nm) of the YAG laser is irradiated from the film surface side of the transparent electrode layer 12 as indicated by an arrow in the figure. The transparent electrode layer 12 is laser-etched with laser light, and the transparent electrode layer groove 15 is formed with an interval in the range of about 6 mm to 15 mm. The transparent electrode layer 12 is partitioned into strips by the transparent electrode layer groove 15.

  The laser power of the incident YAG laser is adjusted so that the processing speed of the transparent electrode layer groove 15 becomes an appropriate speed. The laser light applied to the transparent electrode layer 12 is relatively moved with respect to the substrate 11 in a direction substantially orthogonal to the series connection direction of the power generation cells 3 (see FIG. 11 and the like).

FIG. 5 is a schematic diagram for explaining a process of laminating the photoelectric conversion layer in the manufacturing process of the solar cell panel of FIG.
When the transparent electrode layer groove 15 is formed, the photoelectric conversion layer 13 is laminated on the transparent electrode layer 12 as shown in FIG.
Specifically, the photoelectric conversion layer 13 is formed by using a plasma CVD apparatus with SiH ₄ gas and H ₂ gas as main raw materials, and reducing the temperature of the substrate 11 in a reduced pressure atmosphere ranging from about 30 Pa to about 1000 Pa. The film is formed under the condition kept at 200 ° C. As shown in FIG. 1, the photoelectric conversion layer 13 is laminated so that an amorphous p layer 22A, an amorphous i layer 23A, and an amorphous n layer 24A are arranged in this order from the side on which light, for example, sunlight enters.

In the present embodiment, the amorphous p layer 22A is a layer having a thickness of about 10 nm to about 30 nm mainly made of B-doped amorphous SiC, and the amorphous i layer 23A has a thickness of about 200 nm mainly made of amorphous Si. The amorphous n layer 24A is applied to a case where the film thickness is mainly about 30 nm to about 50 nm with a p-doped Si layer containing amorphous Si containing microcrystalline Si. To do.
A buffer layer may be provided between the p layer film and the i layer film in order to improve the interface characteristics.

FIG. 6 is a schematic diagram for explaining a process of forming connection grooves in the manufacturing process of the solar cell panel of FIG.
When the photoelectric conversion layer 13 is laminated, a connection groove 17 is formed as shown in FIG.
Specifically, the substrate 11 is placed on an XY table, and the second harmonic (532 nm) of the laser diode-pumped YAG laser is irradiated from the film surface side of the photoelectric conversion layer 13 as indicated by an arrow in the figure. The The photoelectric conversion layer 13 is laser-etched with a laser beam to form a connection groove 17.

The laser beam may be irradiated from the film surface side of the photoelectric conversion layer 13 or may be irradiated from the opposite substrate 11 side, and is not particularly limited.
When irradiated from the substrate 11 side, the energy of the laser light is absorbed by the amorphous silicon layer of the photoelectric conversion layer 13 to generate a high vapor pressure. Since the photoelectric conversion layer 13 is etched using this high vapor pressure, a more stable laser etching process can be performed.

The laser light is pulse-oscillated in a range from about 10 kHz to about 20 kHz, and the laser power is adjusted so as to obtain an appropriate processing speed.
Further, the position of the connection groove 17 is selected in consideration of the positioning tolerance so as not to intersect with the transparent electrode layer groove 15 processed in the previous process.

7 and 8 are schematic views illustrating a process of laminating the back electrode layer in the manufacturing process of the solar cell panel of FIG.
When the connection groove 17 is formed, the back electrode layer 14 is laminated on the photoelectric conversion layer 13 as shown in FIG. Specifically, the first back electrode layer 14A, which is a GZO film, and the second back electrode layer 14B made of an Ag film and a Ti film or an Ag film and an Al film are stacked.
At this time, the back electrode layer 14 is also laminated in the connection groove 17 to form a connection portion 18 that connects the transparent electrode layer 12 and the back electrode layer 14.

The first back electrode layer 14A is a ZnO film doped with Ga having a thickness of about 50 nm to about 100 nm, and is a layer formed by a sputtering apparatus.
Since the film formation method of the first back electrode layer 14A is a feature of the present embodiment, it will be described later.

The second back electrode layer 14B is formed using a sputtering apparatus under a temperature condition in a range from about 150 ° C. to about 200 ° C. under a reduced pressure atmosphere.
Specifically, an Ag film having a film thickness ranging from about 150 nm to about 500 nm is laminated, and then a Ti film having a film thickness ranging from about 10 nm to about 20 nm is laminated. Alternatively, a laminated structure of an Ag film having a thickness of about 25 nm to 100 nm and an Al film having a thickness of about 15 nm to 500 nm may be used.

  As described above, when the first back electrode layer 14A is formed between the photoelectric conversion layer 13 (see FIG. 1) and the Ag film of the second back electrode layer 14B, the photoelectric conversion layer 13 and the second back electrode are formed. The contact resistance with the layer 14B is reduced and the reflection of light is improved.

FIG. 9 is a schematic diagram for explaining a process of processing the separation groove in the manufacturing process of the solar cell panel of FIG.
When the back electrode layer 14 is laminated, a separation groove 16 is formed as shown in FIG.

Specifically, the substrate 11 is placed on an XY table, and the second harmonic (532 nm) of the laser diode-pumped YAG laser is irradiated from the substrate 11 side as indicated by the arrow in the figure. The incident laser light is absorbed by the photoelectric conversion layer 13, and a high gas vapor pressure is generated in the photoelectric conversion layer 13. Due to this gas vapor pressure, the first back electrode layer 14A and the second back electrode layer 14B are exploded and removed.
The laser light is pulse-oscillated in a range from about 1 kHz to about 10 kHz, and the laser power is adjusted so that an appropriate processing speed is obtained.

FIG. 10 is a schematic diagram for explaining a process of processing the insulating groove in the manufacturing process of the solar cell panel of FIG. FIG. 11 shows a view of the solar cell panel illustrating the configuration of the insulating groove in FIG. 10 as viewed from the back electrode layer side.
When the photoelectric conversion layer groove 16 is formed, an insulating groove 19 is formed as shown in FIGS. 10 and 11. The insulating groove 19 divides the power generation region to separate the portion where the series connection portion is likely to be short-circuited at the film end portion around the end of the substrate 11 and remove the influence.

  10 is a cross-sectional view in the X direction in which the photoelectric conversion layer 13 is cut in the direction connected in series. Therefore, the back electrode layer 14 (first back electrode layer) is originally located at the position of the insulating groove 19. A and the second back electrode layer 14B) / photoelectric conversion layer 13 / transparent electrode layer 12 have been removed by polishing the surrounding film removal region 20 (see FIG. 11). For the convenience of description of the processing of the portion, the insulating groove formed to represent the Y-direction cross section at this position will be described as the X-direction insulating groove 19.

  When the insulating groove 19 is formed, the substrate 11 is placed on an XY table, and the second harmonic (532 nm) of the laser diode pumped YAG laser is incident from the substrate 11 side. The incident laser light is absorbed by the transparent electrode layer 12 and the photoelectric conversion layer 13, and a high gas vapor pressure is generated. By this gas vapor pressure, the first back electrode layer 14A and the second back electrode layer 14B explode, and the back electrode layer 14 (the first back electrode layer 14A and the second back electrode layer 14B), the photoelectric conversion layer 13, and the transparent electrode Layer 12 is removed.

The laser light is pulse-oscillated in a range from about 1 kHz to about 10 kHz, and the laser power is adjusted so that an appropriate processing speed is obtained. The irradiated laser light is moved in the X direction (see FIG. 11) at a position within a range from 5 mm to 20 mm from the end of the substrate 11.
At this time, it is not necessary to provide the Y-direction insulating groove because the film surface polishing removal processing of the peripheral film removal region 20 of the substrate 11 is performed in a later process.

The insulating groove 19 is preferably formed up to a position within a range from 5 mm to 15 mm from the end of the substrate 11. By doing in this way, the penetration | invasion of the external moisture from the solar cell panel edge part to the inside of the solar cell module 2 can be suppressed.
In the steps described so far, the YAG laser is used as the laser beam. However, the present invention is not limited to the YAG laser, and a YVO4 laser, a fiber laser, or the like may be used as the laser beam.

FIG. 12 shows a view of the solar cell panel as viewed from the substrate side.
When the insulating groove 19 is formed, the laminated film around the substrate 11 (peripheral film removal region 20), that is, the first back electrode layer 14A and the second back electrode layer 14B, the photoelectric conversion layer 13, and the transparent electrode layer 12 are removed. Thus, the peripheral film removal region 20 is formed. Since this laminated film has a step and is easy to peel off, by removing the laminated film, adhesion of the back sheet 51 through EVA or the like performed in a later process can be performed soundly and a sealing surface can be secured. it can.
The above-mentioned laminated film is removed over the entire periphery of the substrate 11 within a range from 5 mm to 20 mm from the edge of the substrate 11 to form a peripheral film removal region 20.

With respect to the X direction, the laminated film on the substrate end side is removed from the above-described insulating groove 19 using grinding stone polishing, blast polishing, or the like. On the other hand, in the Y direction, the laminated film on the substrate end side with respect to the transparent electrode layer groove 15 is removed using grinding stone polishing, blast polishing, or the like.
Polishing debris and abrasive grains generated when removing the laminated film are removed by cleaning the substrate 11.

  At the terminal box mounting portion, an opening through window is provided in the back sheet 51, and the current collector plate is taken out. A plurality of layers of insulating materials are installed in the opening through window portion, and intrusion of moisture and the like from the outside is suppressed.

Of the power generation cells 3 arranged in series, the power generated using the copper foil terminals extending from the power generation cell 3 at one end and the power generation cell 3 at the other end is collected in a terminal box on the back side of the solar cell panel. Has been. The terminal box is configured to extract the collected power.
In addition, the insulating sheet which prevents a short circuit with each part is arrange | positioned at the above-mentioned copper foil terminal. For example, the insulating sheet is formed wider than the copper foil terminal.

When a copper foil terminal or the like used for current collection is provided, an adhesive filler sheet made of EVA (ethylene vinyl acetate copolymer) or the like is disposed. The adhesive filler sheet covers the entire solar cell module 2 and is disposed so as not to protrude from the substrate 11.
On the adhesive filler sheet, a back sheet 51 having a high waterproof effect is installed. In the present embodiment, the back sheet 51 will be described as applied to one having a three-layer structure of PET (polyethylene terephthalate) sheet / aluminum foil / PET sheet.

  After the adhesive filler sheet and the back sheet 51 are arranged at predetermined positions, the back sheet 51 is deaerated using a laminator, and pressing is performed while applying a temperature in a range from about 150 ° C. to about 160 ° C. Thereby, the back sheet 51 is adhered to the solar cell module 2, and the EVA of the adhesive filler sheet is crosslinked, whereby the back sheet 51 is adhered to the solar cell module 2.

FIG. 13 is a schematic diagram illustrating a process of attaching a terminal box in the manufacturing process of the solar cell panel of FIG. FIG. 14 is a schematic diagram illustrating a sealing process in the manufacturing process of the solar cell panel of FIG.
When the back sheet 51 is bonded, the terminal box 52 is attached to the back side of the solar cell module 2 using an adhesive as shown in FIG.
Thereafter, a copper foil terminal is connected to the output cable of the terminal box 52 using solder or the like, and the inside of the terminal box 52 is filled with a sealing agent (potting agent) and sealed. Thereby, the solar cell panel 1 is completed.

FIG. 15 is a schematic diagram illustrating a performance inspection process in the manufacturing process of the solar cell panel of FIG. FIG. 16 is a schematic diagram illustrating an appearance inspection process in the manufacturing process of the solar cell panel of FIG.
As shown in FIGS. 15 and 16, the solar cell panel 1 manufactured as described above is subjected to a power generation inspection and a predetermined performance test. The power generation inspection is performed using a solar simulator of AM 1.5 and global solar radiation standard sunlight (1000 W / m ² ).
On the other hand, before and after the above-described power generation inspection, a predetermined performance inspection including an appearance inspection of the solar cell panel 1 is performed.

Next, film formation of the first back electrode layer 14A, which is a feature of this embodiment, will be described.
First, the sputtering apparatus 101 for forming the first back electrode layer 14A will be described.
FIG. 17 is a schematic diagram illustrating a schematic configuration of a sputtering apparatus for forming the first back electrode layer of FIG.

  As shown in FIG. 17, the sputtering apparatus 101 includes a vacuum container (container) 102, a vacuum pump 103, a heater 104, a transport unit 105, a target 106, a power source 107, and a gas supply unit 108. Is provided.

The vacuum container 102 is a container in which sputtering is performed to form a GZO film that is the first back electrode layer 14A inside.
Inside the vacuum vessel 102, a heater 104, a transport unit 105, and a target 106 are arranged. On the other hand, a vacuum pump 103, a gas supply unit 108 for supplying argon gas, and the like are connected to the vacuum vessel 102.

The vacuum pump 103 is a pump that discharges gas or the like inside the vacuum vessel 102 to the outside and depressurizes the inside of the vacuum vessel 102 to a predetermined pressure. In this embodiment, the vacuum pump 103 can make the inside of the vacuum vessel 102 in a high vacuum atmosphere of about 10 ⁻⁶ Pa to about 10 ⁻⁵ Pa with the vacuum container 102 closed, and sputter gas is supplied from the gas supply unit 108. The description will be made by applying the present invention to what can be set to a reduced pressure atmosphere of about 0.1 Pa to about 0.5 Pa when supplied.
The vacuum pump 103 may be a known pump such as a dry pump, a turbo molecular pump, or a cryopump, and is not particularly limited.

The heater 104 heats the substrate 11 on which the first back electrode layer 14A is formed to a predetermined temperature. In the present embodiment, the heater 104 is described as being applied to a substrate that can heat the substrate 11 or the like to about 150 ° C.
Note that a known heater can be used as the heater 104 and is not particularly limited.

The transport unit 105 transports the substrate 11 and the like on which the first back electrode layer 14 </ b> A is formed inside the vacuum container 102.
In addition, as the conveyance part 105, a well-known thing can be used and it does not specifically limit.

As shown in FIG. 17, the vacuum vessel 102 is further provided with a gate valve 109 and a gate valve 110.
The gate valve 109 is opened when the substrate 11 is carried in from the adjacent chamber (not shown) in a vacuum state by the transfer unit 105, and is closed during the other periods.
The gate valve 110 is opened when the film formation on the substrate 11 is completed and the substrate 11 is carried out to the adjacent chamber (not shown) in a vacuum state, and is closed during the other periods.

In the present embodiment, the target 106 is used for forming the first back electrode layer 14A and is made of zinc oxide (GZO) doped with 0.5 wt% Ga. Here, the material of the first back electrode layer 14A is not only zinc oxide doped with Ga (GZO) but also zinc oxide doped with Al ₂ O ₃ (AZO), indium oxide compound (ITO), etc. A transparent conductive thin film made of an oxide that can be formed by a sputtering method and having appropriate optical characteristics and electrical characteristics may be selected.
The target 106 is configured such that a direct current high voltage is applied from the power source 107.

The power source 107 applies a DC high voltage to the target 106 and forms plasma between the target 106 and the substrate 11. In the present embodiment, the power source 107 will be described as applied to a DC power source (DC power source) capable of applying a current of 25 A and a voltage of 250 V.
A known power source can be used as the power source 107 and is not particularly limited.

  The power source 107 is not limited to a DC power source, and a high frequency RF power source (for example, a frequency of 13.56 MHz or the like) can be used. Furthermore, you may use DC magnetron sputtering which improved the film-forming speed | rate by providing a magnet in the target back surface.

The gas supply unit 108 supplies the first back electrode layer 14 </ b> A to the inside of the vacuum container 102, that is, a sputtering gas used during sputtering. Specifically, argon gas (Ar) that is an inert gas, oxygen gas (O ₂ ) that is a mixed gas mixed into the argon gas, or the like is supplied into the vacuum vessel 102.

In the present embodiment, the gas supply unit 108 will be described as being applied to a sputtering gas inside the vacuum vessel 102, that is, one that can adjust the mixing ratio in the mixed gas of argon gas (Ar) and oxygen gas (O ₂ ). .

Next, a method for forming the first back electrode layer 14A will be described.
FIG. 18 shows a flowchart for explaining a method of forming the first back electrode layer of FIG.

Generally, in the sputtering apparatus 101, after the film formation process of the first back electrode layer 14A is performed for several tens of hours, in other words, after the film formation process is performed on several hundred to several thousand solar cells. The maintenance for exchanging the target 106 is performed (step S1).
When performing the above-described maintenance, the vacuum container 102 is opened to the atmosphere. Therefore, air, that is, nitrogen gas (N ₂ ), oxygen gas (O ₂ ), water vapor gas (H ₂ O), or the like is adsorbed on the inner surface of the vacuum vessel 102.

When the maintenance is completed, the vacuum vessel 102 is closed, and the gas inside the vacuum vessel 102 is discharged by the vacuum pump 103, and the pressure is reduced to a high vacuum atmosphere of about 10 ⁻⁶ Pa to about 10 ⁻⁵ Pa (step S2 (exhaust Process)). At this time, most of the nitrogen gas (N ₂ ), oxygen gas (O ₂ ), water vapor gas (H ₂ O) and the like adsorbed on the inner surface of the vacuum vessel 102 is exhausted together with the exhaust gas.

Thereafter, the gate valve 109 is opened, and the substrate 11 is carried into the vacuum vessel 102 from a vacuum adjacent chamber (not shown). When the substrate 11 is carried into the vacuum vessel 102, the gate valve 109 is closed. 100 vol% argon gas (Ar) is supplied from the gas supply unit 108 to the inside of the vacuum vessel 102, and the substrate 11 and the like are transferred by the transfer unit 105. Then, a DC high voltage is applied from the power source 107 to the target 106, and plasma is formed between the target 106 and the substrate 11.
In other words, a film forming process for the first back electrode layer 14A is performed (step S3 (initial film forming process)).

In this case, mixing such as oxygen gas adsorbed on the inner surface of the vacuum chamber 102 (O ₂₎ desorption city from the inner surface, and argon gas supplied from the gas supply unit 108 (Ar).
Moreover, desorption city water vapor gases from the interior surface into the vacuum chamber 102 (H 2 _O) is decomposed in an argon plasma atmosphere generated oxygen atoms (O) are mixed with an argon gas (Ar).

  Argon gas (Ar) is ionized in a region where plasma is formed inside the vacuum vessel 102, and the ionized argon collides with the target 106. Then, the substance constituting the target 106, that is, GZO is repelled from the target 106 and appropriately reacts with oxygen atoms (O) in the atmosphere, and on the substrate 11, specifically, on the photoelectric conversion layer 13. The GZO film which is the first back electrode layer 14A is formed by adhesion growth.

  When the formation of the GZO film is completed, high vacuum evacuation is performed in the vacuum vessel 102, the gate valve 110 is opened, and the substrate 11 is carried out to a next chamber (not shown) in a vacuum state. Thereafter, the gate valve 110 is closed.

FIG. 19 shows a graph for explaining the internal transmittance for each wavelength of the first back electrode layer.
Here, when the GZO film is formed by using the low pressure sputtering method in an argon gas atmosphere, the internal transmittance (%) in the GZO film depends on the oxygen flow rate, that is, the oxygen addition amount, as shown in FIG.
In FIG. 19, graph A is an oxygen flow rate of 0.0 vol%, graph B is 0.2 vol%, graph C is 0.4 vol%, graph D is 0.5 vol%, graph E is 1 In the case of 0.0 vol%, the graph F shows the internal transmittance (%) in the case of 5.0 vol%.

As shown in FIG. 19, when the oxygen addition amount is from 0.5 vol% to 5.0 vol%, the transmittance in the long wavelength region is high, and is 95% or more in the wavelength region from 450 nm to 800 nm. Can be obtained.
On the other hand, when the oxygen addition amount is 0.0 vol% to 0.4 vol%, the transmittance decreases as the wavelength becomes longer, and the transmittance becomes 95% or less when the wavelength is 600 nm or more.
In the short wavelength region from 400 nm to 450 nm, the transmittance can be improved when the oxygen addition amount is 1.0 vol% or less.

  In the case of the solar cell panel 1 of this embodiment, that is, when a single-layer amorphous silicon thin film is used as the photoelectric conversion layer 13, power is generated using light having a wavelength of about 400 nm to about 800 nm. Therefore, the GZO film that is the first back electrode layer 14A is required to have high transmittance in the above-described wavelength range.

  Then, as shown to a figure, it turns out that the GZO film formed by making oxygen addition amount into about 1.0 vol% is preferable as the 1st back surface electrode layer 14A of the solar cell panel 1 of this embodiment.

As described above, in the case of the film forming process of the first back electrode layer 14A after the maintenance with the vacuum container 102 opened, the vacuum container 102 can be supplied even if 100 vol% argon gas (Ar) is supplied from the gas supply unit 108. Since there are oxygen gas (O ₂ ), water vapor gas (H ₂ O) and the like desorbed from the inner surface, argon gas (Ar) is 99 vol% and oxygen gas (O ₂ ) is 1 vol% inside the vacuum vessel 102. It becomes a mixed gas having a gas composition close to.

At this time, the flow rate and composition of the gas supplied from the gas supply unit 108 may be changed according to the capacity of the vacuum vessel 102, and are not particularly limited. That is, in the vacuum vessel 102 in balance with the vacuum pumping amount from the vacuum pump 103, a mixed gas in which argon gas (Ar) is mixed at a ratio of 99 vol% and oxygen gas (O ₂ ) at a ratio of 1 vol% is predetermined. The atmospheric pressure (about 0.1 Pa to about 0.5 Pa) is not particularly limited.

Specifically, when the volume of the vacuum vessel 102 is smaller than that in the above-described embodiment, oxygen gas (O ₂ ), water vapor gas (H ₂ O), etc. desorbed from the inner surface of the vacuum vessel 102 are present. Therefore, a mixed gas in which argon gas (Ar) is mixed at a ratio of 99.5 vol% and oxygen gas (O ₂ ) at 0.5 vol% may be supplied from the gas supply unit 108.

Furthermore, since the amount of oxygen gas and the like desorbed from the inner surface of the vacuum vessel 102 decreases with the number of processed substrates (elapsed time), the ratio of oxygen gas (mixed gas) in the mixed gas supplied from the gas supply unit 108 May be increased with the number of processed substrates (elapsed time), and is not particularly limited.

By doing so, the amount of oxygen gas (O ₂ ), water vapor gas (H ₂ O) and the like desorbed from the inner surface of the vacuum vessel 102 in the film forming process in step S3 is increased along with the number of processed substrates (elapsed time). Even if it gradually decreases, the flow rate of oxygen gas (O ₂ ) supplied to the vacuum vessel 102 increases with the number of processed substrates (elapsed time), so that the argon gas (Ar in the mixed gas filled in the vacuum vessel 102 (Ar) ) And oxygen atoms (O) can be made substantially constant.
Furthermore, the mixing ratio of the argon gas (Ar) and the oxygen gas (O ₂ ) in the mixed gas can be accurately adjusted as compared with the method in which the flow rate of the oxygen gas (O ₂ ) is increased stepwise.

Alternatively, the ratio of oxygen gas (O ₂ ) in the mixed gas supplied from the gas supply unit 108 may be increased stepwise with the number of processed substrates (elapsed time), and is not particularly limited.

By doing in this way, compared with the method of increasing the flow volume of oxygen gas (O ₂ ) with the number of processed substrates (elapsed time), mixing of argon gas (Ar) and oxygen gas (O ₂ ) in the mixed gas The ratio can be easily adjusted.

In addition, the ratio of oxygen gas (O ₂ ) and oxygen atom (O) in the mixed gas filled in the vacuum vessel 102, in other words, the oxygen partial pressure is measured from the gas supply unit 108 while measuring with a mass spectrometer or the like. The ratio of oxygen gas (O ₂ ) in the supplied mixed gas may be adjusted and is not particularly limited.

By doing so, the mixing ratio of argon gas (Ar) and oxygen gas in the mixed (O ₂₎ gas can be adjusted accurately.

The film forming process of the first back electrode layer 14A performed while supplying 100 vol% argon gas (Ar) from the gas supply unit 108 is repeated for the substrate 1 to be sequentially transferred, and the initial film forming process (step S3). Is continued for a predetermined number of film-forming processes (predetermined period), then, a mixed gas in which 99 vol% argon gas (Ar) and 1 vol% oxygen gas (O ₂ ) are mixed from the gas supply unit 108. The first back electrode layer 14A is formed (step S4 (main film forming step)).

Examples of the predetermined period include a time when the amount of oxygen gas (O ₂ ) or water vapor gas (H ₂ O) desorbed from the inner surface of the vacuum vessel 102 decreases. That is, a case where the ratio of oxygen gas (O ₂ ) in the mixed gas inside the vacuum vessel 102 decreases can be exemplified. Therefore, this period depends on the capacity of the vacuum vessel 102 and the exhaust capacity of the vacuum pump.

According to the above configuration, since oxygen gas (O ₂ ), water vapor gas (H ₂ O), and the like are desorbed from the inner surface of the vacuum vessel 102, the step inside the vacuum vessel 102 in the film forming process in step S 3 includes steps. Argon gas (Ar) and oxygen gas (O ₂ ) mixed at a ratio close to the mixed gas in the film forming process of S4 are filled. Therefore, the first back electrode layer 14A formed in the film forming process during the initial film forming process in step S3 and the first back electrode formed in the film forming process during the main film forming process in step S4. The difference in characteristics with the layer 14A is reduced.
That is, the power generation performance of the solar cell panel 1 can be stabilized, and the yield at the time of manufacturing the solar cell panel 1 can be improved.

FIG. 21 shows the change in the maximum output of the solar cell panel due to the maintenance for replacing the target 106 and the influence of the short-circuit current, and shows the change in the performance of the solar cell panel before and after the vacuum vessel 102 is opened to the atmosphere due to the maintenance. Is.
Here, the horizontal axis in the graph of FIG. 21 indicates the passage of time, the vertical axis indicates each performance of the solar cell panel, and each performance of the solar cell panel in the film forming process period during each maintenance stop period. The average value is normalized as a reference value (1.0).

On the left side of the graph shown in FIG. 21, a mixed gas having a constant oxygen (O ₂ ) concentration, that is, a mixed gas in which 99 vol% argon gas (Ar) and 1 vol% oxygen gas (O ₂ ) are mixed is supplied. The case where it continued is shown.

In this case, the solar cell panel that has been deposited for about 3 hours after restarting the deposition process after the operation of the sputtering apparatus 101 for maintenance (hereinafter referred to as “maintenance stop”) is resumed. The maximum output and the value of the short-circuit current are lower than the maximum output and the value of the short-circuit current of the solar cell panel that has been subjected to film formation before the maintenance stop.
Specifically, the maximum output value of the solar cell panel formed immediately after the film forming process is resumed is about 3% of the maximum output value of the solar cell panel formed before the maintenance stop. It shows a situation in which the performance, such as maximum output and short circuit current, gradually recovers over time. At this time, the reason why the maximum output of the solar cell panel is reduced is that the short-circuit current is low.

On the other hand, the right side of the graph shown in FIG. 22 shows a case where a mixed gas having a changed oxygen (O ₂ ) concentration is supplied.
Specifically, 100 vol% argon gas (Ar) (that is, no oxygen gas (O ₂ )) was supplied in the initial film forming process, and after the maintenance stopped, the film forming process was resumed and about 3 hours passed. The case where oxygen gas (O ₂ ) is added later and a mixed gas in which 99 vol% argon gas (Ar) and 1 vol% oxygen gas (O ₂ ) are mixed is shown.

  In this case, the maximum output and short circuit of the solar cell panel that has been deposited after the maintenance stop, including the solar cell panel that has been deposited for about 3 hours after the maintenance process has stopped, is resumed. The current value is in a stable state, and a situation is shown in which a solar cell panel is produced with good yield immediately after the film forming process is resumed.

Furthermore, after the film forming process in step S3 is continued for a predetermined period, in other words, the amount of oxygen gas (O ₂ ), water vapor gas (H ₂ O), etc. desorbed from the inner surface of the vacuum vessel 102 decreases, and the vacuum When the mixing ratio of the oxygen gas (O ₂ ) in the gas inside the container 102 decreases, the film forming process is switched to step S4, so that the argon gas (Ar) and oxygen gas in the mixed gas filled in the vacuum container 102 are switched. The mixing ratio with (O ₂ ) can be made substantially constant.

[Second Embodiment]
Next, a second embodiment of the present invention will be described with reference to FIG. 20 and FIG.
The basis of the method for manufacturing a solar cell panel in the present embodiment is the same as that in the first embodiment, but the method for forming the first back electrode layer is different from that in the first embodiment. Therefore, in this embodiment, only the method for forming the first back electrode layer will be described with reference to FIGS. 20 and 22, and the description of other components and the like will be omitted.
FIG. 20 shows a flowchart for explaining a method of forming the first back electrode layer in the solar cell panel of the present embodiment.
Note that the same elements and steps as those in the first embodiment are denoted by the same reference numerals and description thereof is omitted.

  After the maintenance is performed (step S1), the inside of the vacuum vessel 102 is evacuated, and when the inside of the vacuum vessel 102 is reduced to a predetermined pressure (step S2), the substrate 11 is carried into the vacuum vessel 102. Then, the film formation process of the first back electrode layer 14A is performed while maintaining a predetermined reduced pressure while supplying 100 vol% argon gas (step S3).

  When the film formation process of the first back electrode layer 14A performed while supplying 100 vol% argon gas is continued for a predetermined number of processes (predetermined period), then 99 vol% argon gas and 1 vol from the gas supply unit 108 A film forming process of the first back electrode layer 14A is performed while supplying a mixed gas in which% carbon dioxide gas is mixed (step S14 (main film forming process)).

Carbon dioxide gas (CO ₂ ) is decomposed and releases oxygen (O) in a region where plasma is formed between the target 106 and the substrate 11. Therefore, the same operation as when oxygen gas (O ₂ ) is supplied as in the first embodiment is exhibited.

FIG. 22 shows a graph for explaining changes in the maximum output of the solar cell panel and the short-circuit current when the concentration of carbon dioxide gas in the mixed gas is changed.
Note that, as described above, 1 vol% carbon dioxide gas (CO ₂ ) may be mixed with the mixed gas supplied from the gas supply unit 108, or ₂ vol% carbon dioxide gas as shown in FIG. (CO ₂ ) may be mixed, and is not particularly limited.

Specifically, even if ₂ vol% carbon dioxide gas (CO ₂ ) is mixed with the mixed gas supplied from the gas supply unit 108, the maximum output of the solar cell panel 1 manufactured by this method (white in FIG. 22). The change in the short bar graph) and the short circuit current (the hatched graph in FIG. 22) is smaller than that in the case of mixing 1 vol% oxygen gas (O ₂ ). In other words, since the influence on the performance of the solar cell panel 1 is small, there is an effect that it is not necessary to strictly control the concentration of the mixed carbon dioxide gas (CO ₂ ).

This is considered to be due to the following reason.
That is, when mixing the carbon dioxide gas (CO ₂₎ is carried out in an argon gas plasma, together with oxygen from the carbon dioxide gas (CO ₂₎ (O) is formed, carbon monoxide (CO) and carbon (C) is also formed. This carbon monoxide (CO) and carbon (C) are combined with excess oxygen (O) to become carbon dioxide (CO ₂ ) and carbon monoxide (CO).

Therefore, even if a mixed gas in which excess carbon dioxide gas (CO ₂ ) is mixed is supplied, a relatively constant appropriate oxygen (in the vicinity of the growth surface of the GZO film as the first back electrode layer 14A) ( O) The concentration is easily maintained. As a result, it is considered that the transmittance of the first back electrode layer 14A is easily maintained at an appropriate value.

  In addition, like the above-mentioned embodiment, after continuing the film forming process which concerns on step S3 only for predetermined time, the film forming process which concerns on step S14 may be performed, or the duration of the film forming process which concerns on step S3 is set. The film forming process according to step S14 may be performed by shortening, and is not particularly limited.

That is, in the case where carbon dioxide gas (CO ₂ ) is mixed as described above, even if oxygen (O) is excessively present in the vacuum vessel 102, the GZO film that is the first back electrode layer 14A is used. This is because an appropriate oxygen (O) concentration is easily maintained in the vicinity of the growth surface of the film, and the transmittance of the first back electrode layer 14A is maintained at an appropriate value.

The technical scope of the present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the present invention.
For example, in the above-described embodiment, the present invention has been described by applying to a solar cell panel in which a single-layer amorphous silicon thin film is formed as a photoelectric conversion layer, but crystalline silicon solar cells including microcrystalline silicon are used as the photoelectric conversion layer. Others such as batteries, silicon germanium solar cells, multi-junction type (tandem type) solar cells in which amorphous silicon solar cells and crystalline silicon solar cells or silicon germanium solar cells are laminated in layers from one layer to another This type of thin film solar cell can be similarly applied.

  Furthermore, the present invention can be similarly applied to a solar cell manufactured on a non-light-transmitting substrate such as a metal substrate or the like, on which light is incident from the side opposite to the substrate.

It is a schematic diagram explaining the structure of the solar cell manufactured by the manufacturing method of the solar cell of the 1st Embodiment of this invention. It is a schematic diagram explaining the manufacturing process of the solar cell of FIG. It is a schematic diagram explaining the process of forming the transparent conductive layer in the manufacturing process of the solar cell panel of FIG. It is a schematic diagram explaining the process of forming the transparent conductive layer groove | channel in the manufacturing process of the solar cell panel of FIG. It is a schematic diagram explaining the process of laminating | stacking the photoelectric converting layer in the manufacturing process of the solar cell panel of FIG. It is a schematic diagram explaining the process of forming the connection groove | channel in the manufacturing process of the solar cell panel of FIG. It is a schematic diagram explaining the process of laminating | stacking the back surface electrode layer in the manufacturing process of the solar cell panel of FIG. It is a schematic diagram explaining the process of laminating | stacking the back surface electrode layer in the manufacturing process of the solar cell panel of FIG. It is a schematic diagram explaining the process of processing the photoelectric converting layer groove | channel in the manufacturing process of the solar cell panel of FIG. It is a schematic diagram explaining the process of processing the insulation groove | channel in the manufacturing process of the solar cell panel of FIG. It is the figure which looked at the solar cell panel explaining the structure of the insulation groove | channel of FIG. 10 from the back surface electrode layer side. It is the figure which looked at the solar cell panel from the substrate side. It is a schematic diagram explaining the process of attaching the terminal box in the manufacturing process of the solar cell panel of FIG. It is a schematic diagram explaining the sealing process in the manufacturing process of the solar cell panel of FIG. The schematic diagram explaining the performance test process in the manufacturing process of the solar cell panel of FIG. 1 is shown. It is a schematic diagram explaining the external appearance inspection process in the manufacturing process of the solar cell panel of FIG. It is a schematic diagram explaining schematic structure of the sputtering device which forms the 1st back surface electrode layer of FIG. It is a flowchart explaining the film forming method of the 1st back surface electrode layer of FIG. It is a graph explaining the internal transmittance with respect to each wavelength of a 1st back surface electrode layer. It is a flowchart explaining the film forming method of the 1st back surface electrode layer in the solar cell panel which concerns on the 2nd Embodiment of this invention. It is a graph explaining the change of the maximum output of a solar cell panel and a short circuit current at the time of changing the density | concentration of oxygen gas in the mixed gas after the maintenance which concerns on the 1st Embodiment of this invention. It is a graph explaining the change of the maximum output and short circuit current of a solar cell panel at the time of changing the density | concentration of the carbon dioxide gas in the mixed gas which concerns on the 2nd Embodiment of this invention.

Explanation of symbols

2 Solar cell module (solar cell)
11 Substrate 14A First back electrode layer (layer)
102 Vacuum container (container)
S2 exhaust process S3 initial film forming process S4, S14 main film forming process

Claims (2)

An exhaust process for raising the degree of vacuum by exhausting the gas inside the container closed after being opened to the atmosphere;
A substrate is installed, a mixed gas in which an inert gas containing oxygen atoms is mixed in a predetermined concentration is filled in the evacuated container, and the target is disposed between the target and the substrate disposed in the container. A film forming step of forming a film constituting a solar cell on the substrate by sputtering, applying a voltage to the substrate;
Before the main film forming step, the mixed gas in which the concentration of the mixed gas in the mixed gas is lower than the predetermined concentration is supplied into the container, and the film is applied to the substrate for a predetermined period. And an initial film forming process for forming a film only,
In the initial film-forming step, the flow rate of the mixed gas supplied to the container is increased stepwise after a predetermined number of film-forming treatments as time passes,
Method of manufacturing a solar cell wherein the mixed gas, wherein the oxygen gas der Rukoto. In the initial film forming step and the main film forming step, the film formed on the substrate placed in the container is a transparent conductive film made of zinc oxide,
The inert gas is argon;
The method for manufacturing a solar cell according to claim 1 , wherein the oxygen concentration in the mixed gas is 0.5 vol% to 1.0 vol% .

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