JP5234165B2 - Solid-state imaging device and imaging device - Google Patents

Description

  The present technology relates to a solid-state imaging device and an imaging device having white pixels that transmit all wavelengths and pixels that perform spectroscopy using a multilayer film or a photonic crystal.

In a solid-state imaging device such as a CCD sensor or a CMOS sensor, as the area per pixel is reduced, the area of the photodiode is reduced, and the number of electrons (holes) that are photoelectrically converted is also reduced. Further, the reduction of the area of the pixel is disadvantageous also in the light condensing, which causes a decrease in sensitivity of the solid-state imaging device and a decrease in S / N ratio.
Further, in the color separation using the Bayer array or the complementary color array color filter shown in FIG. 11, there is a problem such as a decrease in sensitivity due to the color filter or an incomplete color separation due to color mixing. The S / N ratio was lowered.
Therefore, a method for taking in as much light as possible while performing color separation is being searched. One method is to use W (white) pixels that transmit all wavelengths. For example, white pixels are used in place of the G (green) pixels in the Bayer array shown in FIG. 11, or white pixels are provided in addition to RGB (red, green and blue) pixels (Patent Document 1). As another method, there is a method of performing spectroscopy using a dielectric multilayer film or a photonic crystal using a difference in refractive index (Non-Patent Document 1).

JP 2004-304706 A

US Pat. No. 5,323,233

  However, the method of using white pixels in a normal organic color filter has a problem that even if color coding is performed, color separation cannot be sufficiently performed and image creation cannot be performed well. In addition, in the method of performing spectroscopy using a dielectric multilayer film or a photonic crystal, the multilayer film is formed a plurality of times. Therefore, in a normal Bayer array or complementary color array, a multilayer film sufficient for spectroscopy is formed. It was difficult to do.

12A and 12B are diagrams illustrating another example of a conventional solid-state imaging device, in which FIG. 12A is a plan view and FIG. 12B is a cross-sectional view along AA ′.
As shown in FIG. 12A, this solid-state imaging device is configured by configuring RGB color filters in a Bayer array. In the Bayer array, four pixels in two rows and two columns are composed of two G pixels 201, B pixels 202, and R pixels 203. As shown in FIG. 12B, each of the G pixel 201, the B pixel 202, and the R pixel 203 has a photoelectric conversion region 102 formed on the semiconductor substrate 101, and a wiring / light-shielding film 103 on the top thereof, for color separation. The multilayer film 104 and the OCL (on-chip lens) 105 are sequentially formed.
When the G pixel 201, the B pixel 202, and the R pixel 203 are configured using the multilayer film 104 in this manner, the multilayer film 104 of the G pixel 201 formed earlier forms a layer parallel to the surface of the semiconductor substrate 201. However, the multilayer film 104 of the B pixel 202 which is formed adjacent to the G pixel 201 and is formed on the multilayer film 104 formed earlier is bent and embedded, in other words, the multilayer film. The periphery of 104 is bent, and the multilayer film 104 is overlapped in the direction parallel to the surface of the semiconductor substrate 201, and the multilayer film 104 does not function for color separation, or the color separation characteristics deteriorate. Resulting in.

The present technology has been made in view of such circumstances, and its purpose is to efficiently perform color separation using white pixels that transmit all wavelengths and pixels that perform spectroscopy using a multilayer film or a photonic crystal. An object of the present invention is to provide a solid-state imaging device and an imaging device that perform well and can improve sensitivity and S / N ratio.
Another object of the present technology is to provide a solid-state imaging device and an imaging device capable of overcoming the structural problems of conventional multilayer films, performing color separation efficiently, and improving sensitivity and S / N ratio. It is in.

In order to achieve the above object, a solid-state imaging device includes: a white pixel that transmits all wavelengths; a first color separation pixel that includes a multilayer film or photonic crystal that cuts a wavelength region higher than a predetermined first wavelength; And a second color separation pixel having a multilayer film or a photonic crystal that cuts a wavelength region higher than the second wavelength and higher than the second wavelength.
The solid-state imaging device includes a white pixel that transmits all wavelengths, a first color separation pixel that includes a multilayer film or a photonic crystal that cuts a wavelength region lower than a predetermined first wavelength, and the first wavelength. And a second color separation pixel having a multilayer film or a photonic crystal that cuts a wavelength region lower than the lower second wavelength.
The solid-state imaging device includes: a white pixel that transmits all wavelengths; a first color separation pixel that includes a multilayer film or photonic crystal that cuts a wavelength region higher than a predetermined first wavelength; and the first wavelength. And a second color separation pixel having a multilayer film or a photonic crystal that cuts a wavelength region lower than the lower second wavelength.
The imaging device includes an imaging unit using a solid-state imaging device, a control unit that controls the imaging unit, and an operation unit that operates the imaging unit, and the solid-state imaging device is a white that transmits all wavelengths. A first color separation pixel having a pixel, a multilayer film or a photonic crystal that cuts a wavelength region higher than a predetermined first wavelength, and a wavelength region higher than a second wavelength higher than the first wavelength; And a second color separation pixel having a multilayer film or a photonic crystal.

The solid-state imaging device includes a white pixel that transmits all wavelengths, a first color separation pixel that includes a multilayer film or a photonic crystal that transmits a predetermined first color, and a second color that is different from the first color. A second color separation pixel having a multilayer film or a photonic crystal that transmits color, and the first and second color separation pixels are arranged not to be adjacent to each other but to be adjacent to the white pixel. It is characterized by.
The solid-state imaging device includes a white pixel that transmits all wavelengths, a first color separation pixel that includes a multilayer film or a photonic crystal that transmits a predetermined first color, and a second color that is different from the first color. A second color separation pixel having a multilayer film or a photonic crystal that transmits color, and the first and second color separation pixels are arranged not to be adjacent to each other but to be adjacent to the white pixel. It is characterized by.
The imaging device includes an imaging unit using a solid-state imaging device, a control unit that controls the imaging unit, and an operation unit that operates the imaging unit, and the solid-state imaging device transmits all wavelengths. A white pixel, a first color separation pixel having a multilayer film or a photonic crystal having spectral characteristics that transmit a first color that is visible light, and a second color that is visible light different from the first color A second color separation pixel having a multilayer film or a photonic crystal having a spectral characteristic that transmits light, and the first and second color separation pixels are not adjacent to each other but adjacent to the white pixel. It is arranged in order.

The solid-state imaging device according to the present technology includes a first color separation pixel having a color filter made of an organic material that transmits a predetermined first color, and a multilayer film that transmits a second color different from the first color, A second color separation pixel having a photonic crystal; and a third color separation pixel having a multilayer film or a photonic crystal that transmits a third color different from the first and second colors. The second and third color separation pixels are arranged not to be adjacent to each other but to be adjacent to the first color separation pixel.
In addition, the imaging device of the present technology includes an imaging unit using a solid-state imaging device, a control unit that controls the imaging unit, and an operation unit that operates the imaging unit. A first color separation pixel having a color filter of an organic material that transmits one color, and a second color separation pixel having a multilayer film or a photonic crystal that transmits a second color different from the first color; A third color separation pixel having a multilayer film or a photonic crystal that transmits a third color different from the first and second colors, and the second and third color separation pixels are adjacent to each other. Without being arranged so as to be adjacent to the first color separation pixel.

According to the solid-state imaging device and the imaging device described above, a signal from all wavelengths of light is obtained by the white pixel, and a wavelength region higher than the first wavelength is cut by the multilayer film or the photonic crystal of the first color separation pixel. And a signal from light in which a wavelength region higher than the second wavelength higher than the first wavelength is cut by the multilayer film or the photonic crystal of the second color separation pixel. Then, color separation and image creation are performed using these three types of signals.
For this reason, a bright signal can be obtained from the white pixel, and a signal having superior color separation characteristics can be obtained by using the multilayer film or the photonic crystal of the first and second color separation pixels as compared with the color filter of the conventional organic material. Can do. Therefore, the sensitivity and S / N ratio of the solid-state imaging device can be improved.
Further, according to the solid-state imaging device described above, a signal from light of all wavelengths is obtained by the white pixel, and a wavelength region lower than the first wavelength is cut by the multilayer film or the photonic crystal of the first color separation pixel. A signal from light is obtained, and a signal from light in which a wavelength region lower than the second wavelength lower than the first wavelength is cut by the multilayer film or the photonic crystal of the second color separation pixel is obtained. Then, color separation and image creation are performed using these three types of signals.
Even in such a configuration, the same effects as described above are obtained.
Further, according to the solid-state imaging device described above, a signal from light of all wavelengths is obtained by the white pixel, and a wavelength region higher than the first wavelength is cut by the multilayer film or the photonic crystal of the first color separation pixel. A signal from light is obtained, and a signal from light in which a wavelength region lower than the second wavelength lower than the first wavelength is cut by the multilayer film or the photonic crystal of the second color separation pixel is obtained. Then, color separation and image creation are performed using these three types of signals.
Even in such a configuration, the same effects as described above are obtained.

Further, according to the solid-state imaging device and the imaging device described above, a signal from all wavelengths is obtained by the white pixel, and a signal of the first color is obtained by the multilayer film or the photonic crystal of the first color separation pixel. A signal of the second color is obtained by the multilayer film or the photonic crystal of the second color separation pixel. Then, color separation and image creation are performed using these three types of signals. Further, the first and second color separation pixels are arranged so as not to be adjacent to each other but to be adjacent to the white pixels.
The first and second color separation pixels are surrounded by white pixels. Since the white pixel does not need color separation, it is not necessary to form a multilayer film or a photonic crystal. In the portion where the multilayer film or photonic crystal of the first and second color separation pixels is formed, Embed transparent material. This transparent material can be formed after forming the multilayer film or photonic crystal of the first and second color separation pixels. Since the first and second color separation pixels are surrounded by white pixels, the multilayer film or photonic crystal should be formed when forming the multilayer film or photonic crystal of the first and second color separation pixels. The part and its perimeter can be flattened. For this reason, the multilayer film of the pixel formed later is placed on the multilayer film of the other adjacent pixel formed earlier, the multilayer film of the peripheral part is bent, and the multilayer film of the bent part becomes the surface of the semiconductor substrate. The conventional problem of overlapping in the parallel direction can be eliminated, and each layer of the multilayer film or photonic crystal can be formed in the direction perpendicular to the surface of the semiconductor substrate. Therefore, the first and second color separation pixels having desired color separation characteristics can be reliably configured, and the sensitivity and S / N ratio of the solid-state imaging device can be improved.

According to the solid-state imaging device of the present technology, a signal of the first color is obtained by the color filter of the organic material of the first color separation pixel, and the second color is obtained by the multilayer film or the photonic crystal of the second color separation pixel. The color signal is obtained, and the third color signal is obtained by the multilayer film or the photonic crystal of the third color separation pixel. Then, color separation and image creation are performed using these three types of signals. The second and third color separation pixels are arranged so as not to be adjacent to each other but to the first color separation pixel.
The second and third color separation pixels are surrounded by the first color separation pixel. The color filter of the first color separation pixel can be formed after the formation of the multilayer film or photonic crystal of the second and third color separation pixels. When forming the multilayer film or photonic crystal of the second and third color separation pixels, the portion where the multilayer film or photonic crystal is to be formed and its periphery can be flattened. For this reason, the multilayer film of the pixel formed later is placed on the multilayer film of the other adjacent pixel formed earlier, the multilayer film of the peripheral part is bent, and the multilayer film of the bent part becomes the surface of the semiconductor substrate. The conventional problem of overlapping in the parallel direction can be eliminated, and each layer of the multilayer film or photonic crystal can be formed in the direction perpendicular to the surface of the semiconductor substrate. Therefore, since the second and third color separation pixels having desired color separation characteristics can be reliably configured, the sensitivity and S / N ratio of the solid-state imaging device can be improved.

3 is a diagram illustrating a color arrangement of pixels of the solid-state imaging device according to Embodiment 1. FIG. It is a figure which shows the spectral characteristic of each pixel of the solid-state imaging device of Embodiment 1. It is a figure which shows the spectral characteristic of each pixel of the solid-state imaging device of Embodiment 2. It is a figure which shows the spectral characteristic of each pixel of the solid-state imaging device of Embodiment 3. 6 is a diagram illustrating a color arrangement of pixels of a solid-state imaging device according to Embodiment 4. FIG. 6A and 6B are diagrams illustrating a configuration of a solid-state imaging device according to Embodiment 5, in which FIG. 6A is a plan view and FIG. It is a figure which shows the manufacturing method of the solid-state imaging device of Embodiment 5. It is a figure which shows the example which made the area of the multilayer film or the photonic crystal larger than the area of pixel size. FIG. 9A is a plan view and FIG. 9B is a cross-sectional view along line A-A ′. The It is a figure showing the composition of the imaging device concerning this art. FIG. 11A is a diagram illustrating a Bayer array, and FIG. 11B is a diagram illustrating spectral characteristics of RGB pixels. It is a figure which shows the other example of the conventional solid-state imaging device, FIG. 12 (A) is a top view, FIG.12 (B) is A-A 'sectional drawing.

Hereinafter, embodiments of a solid-state imaging device and an imaging device according to the present technology will be described with reference to the drawings.
Embodiment 1
FIG. 1 is a diagram illustrating a color arrangement of pixels of the solid-state imaging device according to the first embodiment. FIG. 2 is a diagram illustrating spectral characteristics of each pixel of the solid-state imaging device according to the first embodiment.
This solid-state imaging device has a large number of pixels in a plurality of rows and a plurality of columns, and the arrangement is a repeating pattern of four pixels in two rows and two columns shown in FIG. The four pixels have two W pixels 21, B ′ pixels 22 and R ′ pixels 23. The W pixel 21, the B ′ pixel 22, and the R ′ pixel 23 correspond to the G pixel, the B pixel, and the R pixel in the Bayer array, respectively.

  As shown in FIG. 2, the W pixel 21 transmits all wavelengths of incident light. The W pixel 21 does not have a conventional color filter made of an organic material, and the portion having the color filter is made of a transparent material. The B ′ pixel 22 has a dielectric multilayer film or photonic crystal that can be used in place of a conventional organic material color filter, and the multilayer film or photonic crystal cuts light having a wavelength X or longer. The R ′ pixel 23 has a dielectric multilayer film or photonic crystal that replaces a conventional organic material color filter, and the multilayer film or photonic crystal cuts light having a wavelength Y higher than the wavelength X or higher. To do.

Color separation and image creation are performed using these three color signals. The color signals obtained by the W pixel 21, the B ′ pixel 22 and the R ′ pixel 23 are respectively represented by W, B ′ and R ′, and the signals obtained by the G pixel, the B pixel and the R pixel in the Bayer array are respectively G, B And R,
B is B ',
R is WR ′,
G is R'-B 'or W-RB
Can be associated with each other.
The multilayer film or photonic crystal of the B ′ pixel 22 and the R ′ pixel 23 preferably has a large refractive index difference and good separation characteristics.

As described above, according to the first embodiment, color signals from all wavelengths are obtained by the W pixel 21, and a wavelength region of a certain wavelength X or more is cut by the multilayer film or the photonic crystal of the B ′ pixel 22. A color signal from light is obtained, and a color signal from light in which a wavelength region of wavelength Y higher than wavelength X is cut by a multilayer film or photonic crystal of R′23 pixels is obtained.
For this reason, a bright signal is obtained by the W pixel 21, and a signal having excellent color separation characteristics is obtained by the multilayer film or the photonic crystal of each of the B ′ pixel 22 and R ′ 23 as compared with a conventional organic material color filter. Can be obtained. Therefore, the sensitivity and S / N ratio of the solid-state imaging device can be improved.

Embodiment 2
FIG. 3 is a diagram illustrating the spectral characteristics of each pixel of the solid-state imaging device according to the second embodiment.
The solid-state imaging device of the second embodiment has the same configuration as the solid-state imaging device of the first embodiment shown in FIG. 1, but the spectral characteristics of the multilayer film or photonic crystal of the B ′ pixel 22 and the R ′ pixel 23 are different. .
As shown in FIG. 3, the R ′ pixel 23 has a multilayer film or photonic crystal, and the multilayer film or photonic crystal cuts light having a wavelength Y or less. The B ′ pixel 22 has a multilayer film or photonic crystal, and the multilayer film or photonic crystal cuts light having a wavelength X lower than the wavelength Y or less.
Thus, even if the solid-state imaging device of the second embodiment is configured, the same effects as the solid-state imaging device of the first embodiment are obtained.

Embodiment 3
FIG. 4 is a diagram illustrating spectral characteristics of each pixel of the solid-state imaging device according to the third embodiment.
The solid-state imaging device of the third embodiment has the same configuration as the solid-state imaging device of the first embodiment shown in FIG. 1, but the spectral characteristics of the multilayer film or photonic crystal of the B ′ pixel 22 and the R ′ pixel 23 are different. .
As shown in FIG. 4, the R ′ pixel 23 has a multilayer film or photonic crystal, and the multilayer film or photonic crystal cuts light having a wavelength Y or longer. The B ′ pixel 22 has a multilayer film or photonic crystal, and the multilayer film or photonic crystal cuts light having a wavelength X lower than the wavelength Y or less.
Thus, even if the solid-state imaging device of the third embodiment is configured, the same effects as those of the solid-state imaging device of the first embodiment are obtained.

Embodiment 4
FIG. 5 is a diagram illustrating a color arrangement of pixels of the solid-state imaging device according to the fourth embodiment.
As shown in FIG. 5, the solid-state imaging device according to the fourth embodiment is configured so that the W pixel 21, the B ′ pixel 22, and the R ′ pixel 23 of the solid-state imaging device according to the first embodiment shown in FIG. Is.
Thus, even when the solid-state imaging device according to the fourth embodiment is configured, the same effects as the solid-state imaging device according to the first embodiment can be obtained.

6A and 6B are diagrams illustrating a configuration of the solid-state imaging device according to the fifth embodiment, in which FIG. 6A is a plan view and FIG. 6B is a cross-sectional view taken along line AA ′.
The solid-state imaging device of Embodiment 5 has a large number of pixels in a plurality of rows and a plurality of columns, and the arrangement is a repeating pattern of 4 pixels in 2 rows and 2 columns shown in FIG. The four pixels have two W pixels 31, B pixels 32, and R pixels 33. The feature of this arrangement is that the B pixel 32 and the R pixel 33 are not adjacent to each other, and the B pixel 32 and the R pixel 33 are surrounded by the W pixel 31, in other words, the B pixel 32 and the R pixel 33. Each side constituting the boundary of the pixel 33 is at a point where the boundary is shared with the boundary of the white pixel.
The W pixel 31 transmits all wavelengths of incident light. The B pixel 32 has a dielectric multilayer film or photonic crystal, and the multilayer film or photonic crystal transmits light of B wavelength. The R pixel 33 has a dielectric multilayer film or photonic crystal, and the multilayer film or photonic crystal transmits light of R wavelength.
For example, a combination of Si02 / SiN, NbO / Si, TaO / Si, or the like is conceivable as a material for the multilayer film of the B pixel 32 and R33, but a combination capable of obtaining a large difference in refractive index is preferable.

  As shown in FIG. 6B, the W pixel 31, the B pixel 32, and the R pixel 33 are the same until the photoelectric conversion region 12 is formed on the semiconductor substrate 11 and the wiring / light-shielding film 13 is formed thereon. Although it is a structure, the structure of the upper part differs. In the case of the W pixel 31, the transparent material 15 is formed, and in the case of the B pixel 32 and the R pixel 33, the multilayer film or the photonic crystal 14 for color separation is formed. On these upper portions, respective OCLs (on-chip lenses) 16 having the same configuration are formed.

FIG. 7 is a diagram illustrating a method for manufacturing the solid-state imaging device according to the fifth embodiment.
As shown in FIG. 7A, first, a photoelectric conversion region 12 is formed on a semiconductor substrate 11 by a well-known method, and a wiring / light-shielding film 13 is formed thereon.
Next, as shown in FIG. 7B, a multilayer film or photonic crystal 14A of the B pixel 32 is formed on the entire upper surface of the wiring / light-shielding film 13, and as shown in FIG. Only the portion (multilayer film or photonic crystal 14) necessary for color separation of 32 is left and unnecessary portions are removed by etching.
Next, the steps of FIG. 7B and FIG. 7C are repeated for the R pixel 33.
Next, the transparent material 15 is embedded in the W pixel 31, and an OCL (on-chip lens) 16 is formed thereon. Note that the embedding of the transparent material 15 may also serve as the OCL 16 formation process or the planarization process.

  As described above, the B pixel 32 and the R pixel 33 are not adjacent to each other but are adjacent to the W pixel 31. Therefore, in the step of forming the multilayer film or photonic crystal 14A shown in FIG. 7B, the portion where the multilayer film or photonic crystal 14 is to be formed and its periphery can be flattened. For this reason, the peripheral portion of the multilayer film of the pixel to be formed later is bent on the multilayer film of the other adjacent pixel formed earlier, the peripheral portion thereof is bent, and the multilayer film of the bent portion is parallel to the surface of the semiconductor substrate. Conventional problems such as overlapping can be solved, and each layer of a multilayer film or photonic crystal can be formed in the direction perpendicular to the surface of the semiconductor substrate. Accordingly, since the B pixel 32 and the R pixel 33 that reliably realize a desired color separation characteristic can be configured, the sensitivity and S / N ratio of the solid-state imaging device can be improved.

As shown in FIG. 8, color mixing can be further reduced by making the area of the multilayer film or photonic crystal larger than the area of the pixel size.
In the sixth embodiment, the B pixel 32 and the R pixel 33 transmit the colors B and R, respectively, for convenience. The color arrangement may be any combination of colors, such as 2 colors + all wavelengths, 3 colors + all wavelengths. A clear bit arrangement as in the fourth embodiment may be used.

FIG. 9 is a diagram illustrating a configuration of the solid-state imaging device according to the sixth embodiment. FIG. 9A is a plan view and FIG. 9B is a cross-sectional view taken along line AA ′.
As shown in FIG. 9, the solid-state imaging device of the sixth embodiment is obtained by replacing the W pixel 31 of the solid-state imaging device of the fifth embodiment with a G pixel 40 having a color filter 41 of a G organic material. Also in this case, the B pixel 32 and the R pixel 33 are not adjacent to each other but are surrounded by the G pixel 40. Similarly to the transparent material 15 of the W pixel 31 of the solid-state imaging device of the fifth embodiment, the G organic material color filter 41 is formed after each multilayer film or photonic crystal of the B pixel 32 and the R pixel 33. Can do.
Therefore, the multilayer film of the pixel to be formed later is placed on the multilayer film of the other adjacent pixels formed earlier, the peripheral part thereof is bent, and the multilayer film of the bent part is overlapped in the direction parallel to the surface of the semiconductor substrate. Such conventional problems can be eliminated, and each layer of a multilayer film or photonic crystal can be formed in the direction perpendicular to the surface of the semiconductor substrate. Therefore, since the B pixel 32 and the R pixel 33 having desired color separation characteristics can be reliably configured, the sensitivity and S / N ratio of the solid-state imaging device can be improved.

Hereinafter, a specific example of an imaging apparatus to which the present technology is applied will be described.
FIG. 10 is a block diagram showing a configuration example of a camera apparatus using the CMOS image sensor of this example.
In FIG. 10, the imaging unit 310 captures an object using, for example, the image sensor illustrated in any of FIGS. 1 to 9 and outputs an imaging signal to the system control unit 320 mounted on the main board. That is, the imaging unit 310 performs processing such as AGC (automatic gain control), OB (optical black) clamping, CDS (correlated double sampling), and A / D conversion on the output signal of the image sensor described above, and performs digital imaging. Generate and output a signal.
In this example, an example in which an imaging signal is converted into a digital signal and output to the system control unit 320 in the imaging unit 310 is shown. However, an analog imaging signal is sent from the imaging unit 310 to the system control unit 320, and the system The control unit 320 may convert to a digital signal. Further, there are various methods for processing in the imaging unit 310, and it is needless to say that the processing is not particularly limited.

  The imaging optical system 300 includes a zoom lens 301 and a diaphragm mechanism 302 disposed in a lens barrel, and forms a subject image on the light receiving unit of the image sensor, based on an instruction from the system control unit 320. Under the control of the drive control unit 330, each part is mechanically driven to perform control such as autofocus.

The system control unit 320 includes a CPU 321, a ROM 322, a RAM 323, a DSP 324, an external interface 325, and the like.
The CPU 321 uses the ROM 322 and the RAM 323 to send an instruction to each part of the camera apparatus to control the entire system.
The DSP 324 performs various kinds of signal processing on the imaging signal from the imaging unit 310, thereby generating a still image or moving image video signal (for example, a YUV signal) in a predetermined format.
The external interface 325 is provided with various encoders and D / A converters, and with external elements (in this example, the display 360, the memory medium 340, and the operation panel unit 350) connected to the system control unit 320. Various control signals and data are exchanged.

The display 360 is a small display such as a liquid crystal panel incorporated in the camera apparatus, and displays a captured image. In addition to the small display device incorporated in such a camera device, it is of course possible to transmit the image data to an external large display device for display.
The memory medium 340 can appropriately store images taken on, for example, various memory cards, and can replace the memory medium with the memory medium controller 341, for example. As the memory medium 340, in addition to various memory cards, a disk medium using magnetism or light can be used.
The operation panel unit 350 is provided with input keys for a user to give various instructions when performing a photographing operation with the camera device. The CPU 321 monitors an input signal from the operation panel unit 350, Various operation controls are executed based on the input contents.

  By applying the present technology to such a camera device, it is possible to perform high-quality shooting of various subjects. In the above configuration, the unit devices and unit modules as the system components, the combination method, the scale of the set, and the like can be selected as appropriate based on the actual state of commercialization. The device shall include a wide variety of variations.

In addition, in the solid-state imaging device and the imaging device according to the present technology, the imaging target (subject) is not limited to a general image such as a person or a landscape, and a special fine image pattern such as a fake bill detector or a fingerprint detector is captured. It can also be applied to. The apparatus configuration in this case is not the general camera apparatus shown in FIG. 10, but further includes a special imaging optical system and a signal processing system including pattern analysis. This makes it possible to realize accurate image detection.
Furthermore, when configuring a remote system such as telemedicine, security monitoring, personal authentication, etc., it is also possible to configure the device configuration including a communication module connected to the network as described above, and a wide range of applications can be realized. It is.

DESCRIPTION OF SYMBOLS 11 ... Semiconductor substrate, 12 ... Photoelectric conversion area, 13 ... Wiring layer, light shielding film, 14 ... Multilayer film or photonic crystal, 15 ... Transparent material, 16 ... On-chip lens, 21 ... W pixel , 22... R ′ pixel, 23... G ′ pixel.

Claims (6)

A first color separation pixel having a color filter of an organic material that transmits a predetermined first color;
A second color separation pixel having a multilayer film or a photonic crystal that transmits a second color different from the first color;
A third color separation pixel having a multilayer film or a photonic crystal that transmits a third color different from the first and second colors,
The solid-state imaging device, wherein the second and third color separation pixels are arranged not adjacent to each other but adjacent to the first color separation pixel. The first color separation pixel, the second color separation pixel, and the third color separation pixel are arranged corresponding to RGB (red, green and blue) pixels in a Bayer arrangement, and the first color separation The pixel corresponds to a G pixel, and one of the second color separation pixel and the third color separation pixel corresponds to an R pixel, and the other corresponds to a B pixel. Solid-state imaging device. The first color separation pixel, the second color separation pixel, and the third color separation pixel are arranged corresponding to RGB pixels in a clear bit arrangement, and the first color separation pixel is a G pixel. correspondingly, before SL one of the second color separation pixel and the third color separation pixels corresponds to the pixels of R, any other solid-state imaging device according to claim 1 wherein corresponding to the pixels of B. A fourth color separation pixel having a multilayer film or a photonic crystal that transmits a fourth color different from the first, second, and third colors;
The solid-state imaging device according to claim 1, wherein the second, third, and fourth color separation pixels are arranged so as not to be adjacent to each other but to the first color separation pixels. The solid-state imaging device according to claim 1, wherein an area of the multilayer film or photonic crystal of the second and third color separation pixels is larger than an area of a pixel size of each of the second and third color separation pixels. An imaging unit using a solid-state imaging device, a control unit that controls the imaging unit, and an operation unit that operates the imaging unit,
The solid-state imaging device
A first color separation pixel having a color filter of an organic material that transmits a predetermined first color;
A second color separation pixel having a multilayer film or a photonic crystal that transmits a second color different from the first color;
A third color separation pixel having a multilayer film or a photonic crystal that transmits a third color different from the first and second colors,
The second and third color separation pixels are arranged not to be adjacent to each other but to be adjacent to the first color separation pixel.

Images