JP5212410B2 - Semiconductor component manufacturing system, control device, and computer program - Google Patents

Description

  The present invention relates to a system and method for manufacturing a semiconductor component.

  A plurality of IC chips are formed on a single wafer as described in Patent Document 1, for example. These IC chips formed on one wafer are individually cut by a dicing process.

  By the way, in recent years, a three-dimensional IC in which a plurality of IC chips are overlapped and joined like a layer has been proposed and put into practical use. Such overlapping and joining of a plurality of IC chips like layers is called “three-dimensional mounting”.

When performing three-dimensional mounting, conventionally, it is common to go through a process of cutting out IC chips formed on a wafer, removing defective IC chips, and stacking and bonding good IC chips. .
JP 2002-42093 A

  In the future, it is predicted that three-dimensionally mounted semiconductor products will be mass-produced. Therefore, it is required to perform three-dimensional mounting of IC chips more efficiently than before and improve the yield of semiconductor products.

  SUMMARY OF THE INVENTION In view of such problems, the present invention has an object to improve the yield by performing three-dimensional mounting of an IC chip more efficiently than before.

A semiconductor component manufacturing system according to an aspect of the present invention is a semiconductor component manufacturing system for manufacturing a semiconductor component by performing three-dimensional mounting of IC chips , and is a plurality of IC chips formed on a wafer , Two electrodes in each IC chip have a point-to-point relationship with the center of each IC chip as a target point, or the electrodes are located at the center, and the arrangement pattern of the plurality of IC chips is A pass / fail inspection means for inspecting pass / fail of a plurality of IC chips that satisfy the condition that the wafer is the same even if it is rotated 180 degrees, and based on the result of the inspection, from among the wafers subjected to the inspection a plurality of wafers defective IC chips are arranged at the same position is selected as a set, further a plurality of portion of the wafer of the wafer out of the wafer became possible elected 1 The plurality of wafers to elect as a set when only 0 degree and the position of the defective IC chip of the remaining wafer when not rotated to the position of the defective IC chip when rotating coincide, the wafer The selection means and a set of a plurality of wafers selected by the wafer selection means are stacked so that defective IC chips face each other and good IC chips face each other, and good IC chips facing each other are joined together. It has a semiconductor component forming means for forming a semiconductor component by doing, and a dividing means for individually cutting the formed semiconductor component.

  Preferably, the wafer selecting means selects a plurality of wafers on which defective IC chips located in a predetermined region near the orientation flat are arranged at the same position among the IC chips formed on the wafer.

  According to the present invention, a plurality of wafers having the same IC chip defect (defect) occurrence location are selected and three-dimensionally mounted. Therefore, it is possible to prevent the defective IC chip and the good IC chip 5 from being joined, and to improve the yield of the semiconductor components. In addition, since the IC chips are bonded in a state where the IC chips are formed on the wafer, the number of times of cutting can be reduced as compared with the conventional method, the manufacturing process can be made more efficient, and mass production can be made easier than before.

It is a figure which shows the example of the whole structure of a semiconductor product manufacturing system. It is a figure which shows the example of arrangement | positioning of the IC chip formed in a wafer. It is a figure which shows the cross section of the three-dimensional mounting IC chip formed in 1 set of several wafers. It is a figure which shows the example of the hardware constitutions of a control apparatus. It is a figure which shows the example of a functional structure of a control apparatus. It is a figure for demonstrating the example of the whole process flow of each processing apparatus of a manufacturing line. It is a figure for demonstrating the example of the flow of the whole process of a control apparatus. It is a figure which shows the example of a defect pattern master. It is a figure which shows the example of a favorable wafer database. It is a figure which shows the example of a defect containing wafer database. It is a figure which shows the example of taking out and the superimposition of several wafer which has the same defect pattern. It is a figure which shows the example of arrangement | positioning of the electrode of an IC chip. It is a figure which shows the example of arrangement | positioning of the IC chip formed in the wafer. It is a figure which shows the modification of the defect pattern template defined by the defect pattern master.

  1 is a diagram showing an example of the overall configuration of a semiconductor product manufacturing system 100, FIG. 2 is a diagram showing an example of the arrangement of IC chips 5 formed on a wafer WF, and FIG. 3 is a diagram showing a set of a plurality of wafers WF. FIG. 4 is a diagram illustrating a cross section of the formed three-dimensional mounting IC chip 6, FIG. 4 is a diagram illustrating an example of a hardware configuration of the control device 1, and FIG. 5 is a diagram illustrating an example of a functional configuration of the control device 1.

  A semiconductor product manufacturing system 100 according to the present invention is a CIM (Computer Integrated Manufacturing) that manufactures semiconductor products such as LSI, and includes a control device 1, a manufacturing line ML, and a communication line 3 as shown in FIG. Composed.

  Semiconductor product manufacturing processes are roughly divided into two groups: a pre-process and a post-process. The processing content of the previous process in the semiconductor product manufacturing system 100 is basically the same as the conventional processing content. Here, an example of the processing content of the previous process will be briefly described.

  First, a thin film is formed on the wafer WF that has been subjected to a polishing process or the like. Photoresist is applied to the formed wafer WF. A mask pattern of an integrated circuit (IC) is transferred by exposing the wafer WF based on a design drawing prepared in advance. The photoresist other than the exposed portion is removed. The portion from which the photoresist has been removed is etched to form a mask pattern on the wafer WF. The photoresist remaining on the wafer WF is removed and removed. The electrical characteristics (semiconductor characteristics, transistor characteristics) of the integrated circuit formed on the wafer WF are inspected. By these processes, a first-layer integrated circuit is formed. By repeating these processes as necessary, the layers of the integrated circuit are formed by being stacked, and the pre-process is completed. In addition, a cleaning process, a baking process, an impurity introduction process, and the like are appropriately performed between or before and after these steps as necessary.

  By performing such a pre-process on the wafer WF, a large number of IC chips 5 are formed on the wafer WF as shown in FIG.

  Also, after completion of the previous process or before that, a wafer code CR1 for distinguishing from the other wafer WF is given to the wafer WF, and this is recorded in a portion other than the IC chip 5 of the wafer WF.

  On the other hand, the processing content of the post process is different from the conventional one. In particular, in the present invention, the processing content of the three-dimensional mounting in which integrated circuits formed on the wafer WF are stacked in a plurality of stages is different from the conventional one. This will be described in detail later.

  The production line ML includes a plurality of processing devices 2 and a conveyor CY. As the processing apparatus 2, a P-CVD (Plasma Chemical Vapor Deposition) apparatus, a sputtering apparatus, a photoresist coating apparatus, a stepper, a developer, an etching apparatus, a peeling apparatus, and an apparatus for performing each process of the previous process, such as an inspection apparatus, A device for performing each process of the post-process such as a circuit test device (prober) 2A, a wafer storage device 2B, a bump forming device 2C, an IC chip bonding device 2D, a cutting device 2E, and a three-dimensional mounting test device 2F, etc. The device is provided.

  These processing devices 2 are connected to the control device 1 via the communication line 3 and execute processing to be performed by each according to a control command from the control device 1. The conveyor CY is also connected to the control device 1, and in accordance with a control command from the control device 1, the wafer WF that has been subjected to predetermined processing is transported to the processing device 2 that performs the next processing. Among the processes of these processes, the same processing apparatus 2 may be in charge of processes of a plurality of processes.

  The circuit test apparatus 2A is an apparatus for testing the electrical characteristics of the IC chip 5. The content of the test itself is the same as in the prior art, but this circuit test apparatus 2A is configured to be able to test these IC chips 5 with the IC chips 5 still formed on the wafer WF. Yes.

  The wafer storage device 2B has a storage for storing a large number of wafers WF, a mechanism for storing the wafer WF in the storage or taking out the wafer WF from the storage, and which wafer WF is stored in which space in the storage. And a database for storing whether or not the wafer WF has been tested by the circuit test apparatus 2A.

  The bump forming apparatus 2 </ b> C forms metal micro bumps BM on the electrodes of the IC chip 5. As shown in FIG. 3, the IC chip bonding apparatus 2 </ b> D superimposes and bonds (adheres) a plurality of IC chips 5 on which the metal micro bumps BM are formed like layers.

  The formation method of the metal micro bump BM and the bonding method of the IC chip 5 are basically the same as the conventional method. For example, the bump forming apparatus 2 </ b> C forms the metal micro bumps BM by a process such as pasting and baking solder on the IC chip 5. However, the bump forming apparatus 2C and the IC chip bonding apparatus 2D of the present embodiment are configured to perform these processes in a state where the IC chip 5 is formed on the wafer WF. Therefore, according to the bump forming apparatus 2C and the IC chip bonding apparatus 2D, a plurality of three-dimensionally mounted IC chips are formed on a set of a plurality of wafers WF. Hereinafter, the IC chip three-dimensionally mounted in this way is referred to as “three-dimensionally mounted IC chip 6” or “three-dimensional LSI”.

  The cutting device 2E cuts a plurality of three-dimensional mounting IC chips 6 formed on one set of wafers WF. The three-dimensional mounting test apparatus 2F tests whether or not the three-dimensional mounting IC chip 6 cut into individual pieces is well three-dimensionally mounted.

  As shown in FIG. 4, the control device 1 includes a CPU 1a, a RAM 1b, a ROM 1c, a hard disk 1d, various interfaces, and the like, and is used for controlling the processing device 2 and the conveyor CY.

  A program and data for controlling each processing device 2 are installed in the hard disk 1d so that each process of the pre-process and the post-process is executed. In particular, in this embodiment, the test data receiving unit 101, the circuit pass / fail determining unit 102, the defective pattern code determining unit 103, the wafer code notifying unit 104, the good wafer database DB1, the defective wafer database DB2, and the like shown in FIG. A program and data for realizing a control function for the characteristic three-dimensional mounting of the present invention are installed. These programs and data are loaded into the RAM 1b as necessary and executed by the CPU 1a. As the control device 1, a workstation or a personal computer is used.

  FIG. 6 is a diagram for explaining an example of the overall processing flow of each processing device 2 of the production line ML, and FIG. 7 is a diagram for explaining an example of the overall processing flow of the control device 1. 8 is a diagram illustrating an example of a defective pattern master FPM, FIG. 9 is a diagram illustrating an example of a good wafer database DB1, FIG. 10 is a diagram illustrating an example of a wafer database DB2 including defects, and FIG. 11 is a plurality of wafers having the same defective pattern. It is a figure which shows the example of taking out and superimposing of WF.

  Next, processing contents and processing procedures of each part of the circuit test apparatus 2A to the three-dimensional mounting test apparatus 2F and the control apparatus 1 shown in FIG. 5 will be described with reference to the flowcharts shown in FIGS.

  As described above in the background art section, conventionally, dicing is performed as the first process in the subsequent process. That is, the IC chips 5 formed on one wafer WF are divided one by one. Then, the integrated circuit is three-dimensionally mounted by superimposing the plurality of divided IC chips 5.

  On the other hand, each part of the circuit test apparatus 2A to the three-dimensional mounting test apparatus 2F shown in FIG. 1 and the control apparatus 1 shown in FIG. Perform original implementation.

  In the circuit test apparatus 2A, when the wafer WF on which the IC chip 5 is formed is sent from the processing apparatus 2 in the previous process (# 20 in FIG. 6), the orientation flat (so-called orientation flat) is oriented in a predetermined direction. Then, the wafer WF is set, and the electrical characteristics of each IC chip 5 formed on the wafer WF (not yet divided) are tested (# 21). At this time, the wafer code CR1 recorded on the wafer WF is also read. Then, test data DT1 and TEG information indicating the values measured in the test are transmitted to the control device 1 in association with the wafer code CR1 read from the wafer WF (# 22).

  Before or after or in parallel with the process of step # 22, the circuit test apparatus 2A sends the wafer WF from which the test data DT1 has been obtained to the wafer storage apparatus 2B. The wafer storage device 2B stores and manages the sent wafer WF in the storage (# 23).

  The processes in steps # 21 to # 23 are executed every time the wafer WF on which the IC chip 5 is formed is sent from the processing apparatus 2 in the previous process (# 20).

  On the other hand, in the control device 1, when the test data receiving unit 101 receives the test data DT1 and the wafer code CR1 from the processing device 2 (# 10 in FIG. 7), the circuit pass / fail judgment unit 102 determines that each IC chip 5 is good. It is determined whether or not it is formed (# 11). For example, the quality is determined based on whether or not a value relating to the electrical characteristics indicated in the test data DT1 exceeds a snout value. Hereinafter, the IC chip 5 determined to have a defect (defect) by the circuit quality determination unit 102 is referred to as “defective IC chip 5F”, and the IC chip 5 determined to be good is referred to as “good IC chip 5R”. May be described.

  As a result of the discrimination processing by the circuit pass / fail judgment unit 102, if a defective IC chip 5F is found in the wafer WF that is the current test target (Yes in # 12), the fault pattern code discrimination unit 103 determines that the wafer WF A defect occurrence pattern (hereinafter referred to as “defective pattern”) and a defective pattern code which is identification information of the defective pattern are determined, for example, as follows (# 13).

  A defective pattern master FPM as shown in FIG. In the defective pattern master FPM, each of the plurality of cells arranged in the vertical and horizontal directions of the defective pattern template TMP represents the arrangement of the IC chips 5 on the wafer WF. Among them, the black cell represents the arrangement of the defective IC chip 5, that is, the defective IC chip 5F, and the white cell represents the arrangement of the good IC chip 5, that is, the good IC chip 5R. That is, patterns of various defect occurrence positions are represented by these defect pattern templates TMP. Each defective pattern template TMP is assigned a defective pattern code CR2 for distinguishing it from other defective pattern templates TMP. In the defect pattern master FPM, defect pattern templates TMP of various defect patterns that may actually occur are registered.

  The defective pattern code discriminating unit 103 arranges and arranges the number of defective IC chips 5F found by the circuit pass / fail discriminating unit 102 and the defective IC chip 5F (black cell) indicated in each defective pattern template TMP of the defective pattern master FPM. Check the placement and its number. Then, if there is a defective pattern template TMP whose arrangement and number match, the defective pattern code CR2 corresponding to the defective pattern template TMP is determined as the defective pattern code of the wafer WF to be tested this time.

  In addition, each defect pattern template TMP of the defect pattern master FPM is the control device 1 as data indicating the number from the left and the number from the top among all the IC chips 5 in the wafer WF. Should be defined. For example, in the case of the defective pattern template TMP in which the defective pattern code CR2 in FIG. 8 is “00000001”, it may be defined as “00000001 = [(1, 1)]”. Alternatively, in the case of the defective pattern template TMP which is “00000509”, it may be defined as “00000001 = [(1,5), (2,2)]”.

  As shown in FIG. 9, the good wafer database DB1 stores the wafer code CR1 of the good wafer WF in which the defective IC chip 5F is not formed and only the good IC chip 5R is formed. As shown in FIG. 10, the defect-containing wafer database DB2 stores the wafer code CR1 of the wafer WF including the defective IC chip 5F for each defective pattern code CR2 of the pattern (defect pattern) of the position where the defective IC chip 5F is generated. To do.

  Returning to the flowchart, the good wafer database DB1 or the defective wafer database DB2 is based on the result of determination of the quality of the IC chip 5 by the circuit quality determination unit 102 or the determination result of the defective pattern by the defect pattern code determination unit 103. The wafer code CR1 of the wafer WF to be tested is newly registered (# 14, # 15).

  That is, when it is determined that all the IC chips 5 formed on the wafer WF to be tested this time are good IC chips 5R (No in # 12), the good wafer database DB1 stores the wafer of the wafer WF. The code CR1 is newly registered (# 15). If it is determined that the defective IC chip 5F is included (Yes in # 12), the defect-containing wafer database DB2 uses the wafer code CR1 of the wafer WF as the pattern of the defective IC chip 5F, that is, the defect pattern defect. Registration is made in the pattern code CR2 field (# 14).

  Steps # 11 to # 15 are executed each time the test data DT1 is transmitted from the circuit test apparatus 2A (# 10). In this way, the determination result of the quality of the IC chip 5 forming the wafer WF is successively accumulated in the good wafer database DB1 and the defective wafer database DB2.

  When the wafer code CR1 for the number of wafers WF necessary for three-dimensional mounting is registered in the good wafer database DB1 (Yes in # 16), the wafer code notification unit 104 sets the wafer code CR1 for the number of wafers WF for the number of wafers WF. The wafer code is extracted from the good wafer database DB1, and a set of these wafer codes CR1 is notified to the wafer storage device 2B (# 17). For example, when performing three-dimensional mounting in which the IC chip 5 is superimposed on three layers, three wafers WF are required. Therefore, when the three wafer codes CR1 are registered, they are notified as one set to the wafer storage device 2B.

  The good wafer database DB1 makes these wafer codes CR1 invalid by setting an invalid flag on these wafer codes CR1 (# 18). Thereafter, the invalid wafer code CR1 is not counted in step # 16.

  Alternatively, when the wafer code CR1 of the number of wafers WF necessary for three-dimensional mounting is registered in the same defective pattern code CR2 column of the defective wafer database DB2 (Yes in # 16), the wafer code notification unit 104 The wafer codes CR1 of the number of wafers WF are extracted from the column, and these wafer codes CR1 are made into one set and notified to the wafer storage device 2B (# 17).

  Then, the defect-containing wafer database DB2 makes these wafer codes CR1 invalid by setting an invalid flag on these wafer codes CR1 (# 18). Thereafter, the invalid wafer code CR1 is not counted in step # 16.

  When the wafer storage device 2B receives the notification of one set of wafer codes CR1 from the control device 1, the wafer storage device 2B takes out the wafers WF of these wafer codes CR1 from the storage as shown in FIG. 11, and sets these wafers WF as one set. This is sent to the bump forming apparatus 2C (# 25 in FIG. 6).

  When a set of wafers WF is sent from the wafer storage device 2B, the bump forming device 2C forms metal micro bumps BM on the good IC chip 5R formed on these wafers WF (# 26). However, the metal micro bump BM is not formed on the defective IC chip 5F. The positions of the good IC chip 5R and the defective IC chip 5F are read from the wafer code CR1 recorded on one of these wafers WF, and the defect pattern of the corresponding defect pattern code CR2 is included in the defect of the control device 1. This can be known by making an inquiry to the wafer database DB2.

  The set of wafers WF that have been subjected to the bump formation process are sent to the IC chip bonding apparatus 2D. The IC chip bonding apparatus 2D stacks and bonds these wafers WF with the orientation flats aligned in the same direction as shown in FIG. 11 (# 27). In this way, a plurality of three-dimensional mounting IC chips 6 as shown in FIG. 3 are formed on this set of wafers WF. However, since the metal micro-bump BM is not formed on the defective IC chip 5F, the three-dimensional mounting IC chip 6 is not formed at that location.

  Note that, due to slight differences in the size of the wafer WF and the like, deviation between embedded wirings may occur between the stacked wafers WF. Therefore, in order to realize highly accurate alignment, marking for alignment is applied to each point in the wafer surface, and the coordinates thereof are stored in advance. After that, three-dimensional mounting is performed between wafers whose coordinate positions match with the determined tolerance.

  Then, this set of wafers WF is sent to the cutting device 2E, and the three-dimensional mounting IC chip 6 is individually divided by the cutting device 2E (# 28), and the three-dimensional mounting IC chip is then cut by the three-dimensional mounting test device 2F. Six tests are performed (# 29). Thereafter, as in the prior art, the target semiconductor product is completed by bonding or packaging the three-dimensional mounted IC chip 6 to a resin. The defective IC chip 5F is cut out without being bonded. Thereafter, the defective IC chip 5F is separated from the three-dimensional mounting IC chip 6 and discarded.

  According to the present embodiment, a plurality of wafers WF having the same defect (defect) occurrence location on the IC chip 5 are selected and three-dimensionally mounted. Therefore, it is possible to prevent the defective IC chip 5F and the good IC chip 5R from being bonded, to improve the yield of the three-dimensional mounting IC chip 6, and to reduce the manufacturing cost of the semiconductor product. In addition, since the IC chip 5 is bonded in a state where the IC chip 5 is formed on the wafer WF, the number of times of cutting is reduced as compared with the conventional method, the efficiency of the manufacturing process of the three-dimensional mounting IC chip 6 is improved, and mass production is performed. Can be easily.

[Modification 1]
FIG. 12 is a diagram showing an example of the arrangement of the electrodes of the IC chip 5, and FIG. 13 is a diagram showing an example of the arrangement of the IC chips 5 formed on the wafer WF.

  The two electrodes in the IC chip 5 formed on the wafer WF have a point-to-point relationship with the center of the IC chip 5 as the target point, or the electrode is located at the center and formed on the wafer WF. The arrangement pattern of the IC chip 5 may be the same even if the wafer WF is rotated 180 degrees. For example, the electrodes in the IC chip 5 are arranged as shown in FIG. 12A or FIG. 12B, and the arrangement of the IC chip 5 formed on the wafer WF is shown in FIG. In this case, the pattern is as shown in b).

  When the three-dimensionally mounted IC chip 6 is formed by stacking a plurality of such wafers WF, even if one of these wafers WF is rotated 180 degrees and then overlapped, two overlapping wafers The position of the electrode of WF can be adjusted well. In view of such properties, in order to use the wafer WF more efficiently, the defective pattern code discriminating unit 103, the defective wafer database DB2, the defective pattern master FPM of the control apparatus 1 shown in FIG. 5, and the IC of FIG. The chip bonding apparatus 2D may be configured as follows, for example.

  If only one of the defective pattern template TMP and the other defective pattern template TMP is rotated 180 degrees and the positions of the defective IC chips 5F all coincide, only one of the defective pattern templates TMP is defective. It is defined in the pattern master FPM. That is, for example, in the case of a wafer WF in which X pieces of IC chips 5 are arranged in the left and right direction and Y pieces in the up and down direction, the cell located at the Mth from the left and the Nth from the top of a certain defective pattern template TMP and the other If cells located at the (X−M + 1) th and (Y−N + 1) th from the left of the defective pattern template TMP indicate the defective IC chip 5F, only one of the defective pattern templates TMP is selected. Define it. As a result, the number of defective pattern templates TMP registered in the defective pattern master FPM is approximately one-half compared to the example of FIG.

  First, the defective pattern code determination unit 103 determines the defective pattern of the wafer WF and the defective pattern code CR2 by the method described in the above embodiment. If it cannot be determined, the arrangement of defective IC chips 5F when the wafer WF is rotated 180 degrees is calculated. Then, the arrangement rotated 180 degrees is compared with each defect pattern template TMP of the defect pattern master FPM, and a defect pattern template TMP that matches the arrangement is found. Then, the defective pattern and the defective pattern code CR2 indicated in the found defective pattern template TMP are determined to be the defective pattern and the defective pattern code CR2 of the wafer WF.

  As described above, the wafer database DB2 including defects stores the wafer code CR1 of the wafer WF including the defective IC chip 5F in the column of the defective pattern code CR2 of the pattern (defective pattern) of the generation position of the defective IC chip 5F. To do. However, when the determination process is performed based on the arrangement rotated by 180 degrees in the defective pattern code determination unit 103, information indicating that fact is added to the wafer code CR1. Here, the character string “TURN” is added immediately after the wafer code CR1.

  As described above, the IC chip bonding apparatus 2D superimposes a plurality of wafers WF having the same defective pattern, and bonds the IC chips 5 facing each other. However, the defective pattern may not match unless rotated 180 degrees. Therefore, the zIC chip bonding apparatus 2D inquires of the defective wafer database DB2 of the control apparatus 1 whether or not the character string “TURN” is added to the wafer code CR1 of the wafer WF to be processed this time. Then, the wafer WF of the wafer code CR1 to which “TURN” is added is rotated by 180 degrees, and then overlapped with another wafer WF to join the IC chips 5 facing each other.

  With such a configuration, the number of types of defective patterns can be reduced and the wafer WF can be used efficiently. In addition, the number of wafers WF stored in the storage of the wafer storage device 2B can be reduced, and the storage period can be shortened.

[Modification 2]
FIG. 14 is a diagram showing a modification of the defect pattern template TMP defined in the defect pattern master FPM.

  The IC chip 5 formed on the wafer WF is often a defective IC chip 5F as it is closer to the orientation flat. In view of such properties, the circuit quality determination unit 102, the defective pattern code determination unit 103, the defective pattern master FPM, and the circuit test device 2A of FIG. 1 of the control device 1 shown in FIG. 5 are configured as follows, for example. May be.

  As shown in FIG. 14, the defect pattern master FPM has a defect occurrence pattern (defect pattern) in the IC chip 5 arranged in a predetermined area close to the orientation flat (hereinafter referred to as “orientation flat neighboring area”). ) Is registered in advance.

  The circuit test apparatus 2A and the circuit pass / fail judgment unit 102 perform electrical property test processing and pass / fail judgment processing on the IC chip 5 arranged in the orientation flat vicinity area of the wafer WF, respectively.

  The defective pattern code determining unit 103 determines a defective pattern in the vicinity of the orientation flat of the wafer WF based on a defective pattern template TMP as shown in FIG.

  With such a configuration, the types of defective patterns can be greatly reduced and the wafer WF can be used more efficiently than in the case of the embodiment and the first modification described above. Further, the number of wafers WF stored in the storage of the wafer storage device 2B can be further reduced, and the storage period can be greatly shortened.

  In addition, the whole or each part of the semiconductor product manufacturing system 100, the control device 1, the manufacturing line ML, the circuit test device 2A, the wafer storage device 2B, the bump forming device 2C, the wafer superimposing device 2D, the cutting device 2E, and the three-dimensional mounting test device 2F. The configuration, processing contents, processing order, and the like can be appropriately changed in accordance with the spirit of the present invention.

In the embodiment described above, the following notes are also disclosed.
(Appendix 1)
A semiconductor component manufacturing system for manufacturing a semiconductor component in which a plurality of IC chips are three-dimensionally mounted.
Pass / fail inspection means for inspecting pass / fail of the IC chip formed on the wafer;
Wafer selection means for selecting a plurality of wafers in which defective IC chips are arranged at the same position based on the result of the inspection from among the wafers subjected to the inspection,
Semiconductor component forming means for forming semiconductor components by bonding IC chips facing each other formed on a plurality of wafers selected by the wafer selecting means, which are stacked in the same direction,
A cutting means for individually cutting the formed semiconductor components;
A semiconductor component manufacturing system comprising:
(Appendix 2)
The wafer selection means selects a plurality of wafers in which defective IC chips located in a predetermined region near the orientation flat among the IC chips formed on the wafer are arranged at the same position.
The semiconductor component manufacturing system according to claim 1.
(Appendix 3)
If the two IC chips facing each other are defective, the semiconductor component forming means does not join the IC chips.
The semiconductor component manufacturing system according to claim 1 or 2.
(Appendix 4)
A semiconductor component manufacturing system for manufacturing a semiconductor component by performing three-dimensional mounting of an IC chip,
Pass / fail inspection means for inspecting pass / fail of the IC chip formed on the wafer;
Among the wafers subjected to the inspection, a plurality of wafers in which defective IC chips are arranged at predetermined positions or wafers in which defective IC chips are in predetermined positions when rotated by a predetermined angle A wafer selection means for selecting;
A plurality of wafers selected by the wafer selection means are stacked such that defective IC chips face each other and good IC chips face each other, and good IC chips facing each other are joined together to form a semiconductor component. A semiconductor component forming means;
A cutting means for individually cutting the formed semiconductor components;
A semiconductor component manufacturing system comprising:
(Appendix 5)
A control device for controlling a semiconductor component manufacturing system comprising a circuit test device, a bump forming device, an IC chip bonding device, and a cutting device,
Causing the circuit test apparatus to perform a test of the electrical characteristics of the IC chip formed on the wafer;
Based on the result of the test, a plurality of wafers in which defective IC chips are arranged at the same position are selected,
Causing the bump forming apparatus to execute a process of forming a bump on each IC chip formed on a plurality of selected wafers;
The IC chip bonding apparatus performs a process of stacking the plurality of selected wafers having bumps formed on the IC chips in the same direction and bonding the IC chips facing each other formed on the wafers. Let
Causing the cutting device to perform a process of individually cutting the bonded IC chip group,
A control device characterized by that.
(Appendix 6)
A computer program used in a computer for controlling a semiconductor component manufacturing system including a circuit test device, a bump forming device, an IC chip bonding device, and a cutting device,
A first process for causing the circuit test apparatus to perform a test of electrical characteristics of an IC chip formed on a wafer;
A second process of selecting a plurality of wafers in which defective IC chips are arranged at the same position based on the result of the test;
A third process for causing the bump forming apparatus to execute a process of forming a bump on each IC chip formed on the selected plurality of wafers;
The IC chip bonding apparatus performs a process of stacking the plurality of selected wafers having bumps formed on the IC chips in the same direction and bonding the IC chips facing each other formed on the wafers. Let the fourth process,
A fifth process for causing the cutting apparatus to perform a process of individually cutting the bonded IC chip group;
A computer program for causing a computer to execute.
(Appendix 7)
A semiconductor component manufacturing method for manufacturing a semiconductor component in which a plurality of IC chips are three-dimensionally mounted,
Check the quality of the IC chip formed on the wafer,
Based on the result of the inspection, a plurality of wafers in which defective IC chips are arranged at the same position are stacked with their orientations aligned,
A semiconductor component is formed by bonding IC chips facing each other formed on a plurality of stacked wafers,
Separate the formed semiconductor parts individually,
A method for manufacturing a semiconductor component.

  The present invention is particularly suitable for manufacturing a semiconductor product by three-dimensionally mounting an IC chip.

100 Semiconductor product manufacturing system (semiconductor component manufacturing system)
DESCRIPTION OF SYMBOLS 1 Control apparatus 102 Circuit quality determination part (quality inspection means)
104 Wafer code notification section (wafer selection means)
2A circuit test equipment (quality inspection means)
2B Wafer storage device (wafer selection means)
2C bump forming device 2D IC chip bonding device (semiconductor component forming means)
2E Cutting device (cutting means)
5 IC chip 6 3D mounting IC chip (semiconductor parts)
WF wafer

Claims (3)

A semiconductor component manufacturing system for manufacturing a semiconductor component by performing three-dimensional mounting of an IC chip,
A plurality of IC chips formed on a wafer, wherein two electrodes in each IC chip have a point-to-point relationship with the center of each IC chip as a target point, or the electrodes are located at the center And a pass / fail inspection means for inspecting pass / fail of a plurality of IC chips satisfying a condition that the pattern of the plurality of IC chips is the same even if the wafer is rotated 180 degrees ;
Based on the result of the inspection, a plurality of wafers in which defective IC chips are arranged at the same position are selected as a set from among the wafers that have been subjected to the inspection. If the position of a defective IC chip when a part of the plurality of wafers is rotated by 180 degrees coincides with the position of a defective IC chip of the remaining wafer when the wafer is not rotated, the plurality A wafer selection means for selecting one wafer as a set;
A set of a plurality of wafers selected by the wafer selecting means are stacked so that defective IC chips face each other and good IC chips face each other, and the good IC chips facing each other are bonded to each other. A semiconductor component forming means for forming a component;
A cutting means for individually cutting the formed semiconductor components;
A semiconductor component manufacturing system comprising: A control device for controlling a semiconductor component manufacturing system comprising a circuit test device, a bump forming device, an IC chip bonding device, and a cutting device,
A plurality of IC chips formed on a wafer, wherein two electrodes in each IC chip have a point-to-point relationship with the center of each IC chip as a target point, or the electrodes are located at the center In addition, the circuit test apparatus is made to perform an electrical characteristic test on a plurality of IC chips satisfying the condition that the arrangement pattern of the plurality of IC chips is the same even if the wafer is rotated 180 degrees. ,
Based on the result of the test, a plurality of wafers on which defective IC chips are arranged at the same position are selected as a set, and a part of the plurality of wafers out of the selected wafers is selected. If the position of the defective IC chip when the wafer is rotated by 180 degrees coincides with the position of the defective IC chip of the remaining wafer when the wafer is not rotated, the plurality of wafers are selected as a set,
Causing the bump forming apparatus to execute a process of forming a bump on each IC chip formed on a selected set of a plurality of wafers;
The selected plurality of wafers with bumps formed on the IC chips are stacked such that defective IC chips face each other and good IC chips face each other, and the wafers formed on the wafer face each other. The process of bonding the IC chips to each other is executed by the IC chip bonding apparatus,
Causing the cutting device to perform a process of individually cutting the bonded IC chip group,
A control device characterized by that. A computer program used in a computer for controlling a semiconductor component manufacturing system including a circuit test device, a bump forming device, an IC chip bonding device, and a cutting device,
A plurality of IC chips formed on a wafer, wherein two electrodes in each IC chip have a point-to-point relationship with the center of each IC chip as a target point, or the electrodes are located at the center In addition, the circuit test apparatus is made to perform electrical characteristic tests on a plurality of IC chips that satisfy the condition that the arrangement pattern of the plurality of IC chips is the same even if the wafer is rotated 180 degrees . The first process,
Based on the result of the test, a plurality of wafers on which defective IC chips are arranged at the same position are selected as a set, and a part of the plurality of wafers out of the selected wafers is selected. A plurality of wafers are selected as a set when the position of the defective IC chip when the wafer is rotated by 180 degrees and the position of the defective IC chip of the remaining wafer when the wafer is not rotated are the same. The second process,
A third process for causing the bump forming apparatus to perform a process of forming a bump on each IC chip formed on a selected set of a plurality of wafers;
The selected plurality of wafers with bumps formed on the IC chips are stacked such that defective IC chips face each other and good IC chips face each other, and the wafers formed on the wafer face each other. A fourth process for causing the IC chip bonding apparatus to execute a process for bonding IC chips to each other;
A fifth process for causing the cutting apparatus to perform a process of individually cutting the bonded IC chip group;
A computer program for causing a computer to execute.