JP5157156B2 - Photoconductor, process cartridge, and image forming apparatus - Google Patents

Description

The present invention is sensitive the light using a semiconductor film containing a Group 13 element, carbon and oxygen, to a process cartridge and an image forming apparatus.

  As optical semiconductors, amorphous chalcogenide compounds such as selenium and tellurium have been widely used as photoelectric conversion members for imaging tubes, light receiving elements, photoreceptors, and the like. In recent years, hydrogenated amorphous silicon has been used for solar cells, image sensors, thin film transistors, photoconductors, and the like (see, for example, Non-Patent Document 1).

The hydrogenated amorphous silicon can control the valence electrons, can realize the electric field effect at the pn junction and the interface, and has a heat resistance up to about 250 ° C., but is deteriorated by strong light (Staebler, Wronski effect) : Applied Physics Handbook, etc.) When used for solar cells, there is a problem that the efficiency is lowered during use due to deterioration by light. In addition, semiconductors composed of these elements are indirect transition types including crystals, and cannot be used for light-emitting elements, so their applications are limited.
As materials for solving these problems of amorphous semiconductors, amorphous materials of group III-V compound semiconductors have been studied (group numbers according to IUPAC's 1989 revision of inorganic chemical nomenclature, III ( IIIb) group 13 and group V 15).

  Conventionally, an amorphous material of a group III-V compound semiconductor is obtained by vapor deposition or sputtering of a group III-V crystal, or a reaction between a group III metal atomized and a molecule containing a group V element or an active molecule. Film formation was performed. In addition, a group III-V film was formed on a heated substrate by a so-called MOCVD method (organometallic vapor phase growth) using an organometallic compound containing a group III metal and an organometallic compound containing a group V element. (Refer nonpatent literature 2).

  Amorphous amorphous silicon is known to have a defect state density between bands that is reduced by hydrogenation, and valence electron control is possible. Conventionally, by reactive deposition or reactive sputtering, III Hydrogenation of the -V group amorphous compound semiconductor is performed (for example, refer nonpatent literature 3 and 4 etc.).

  A nitride-based semiconductor has been proposed as an amorphous group III-V semiconductor (see Patent Document 1). It is reported that a nitride-based semiconductor containing hydrogen operates as an optical semiconductor.

  In recent years, it has been widely used in copying machines and image forming apparatuses using electrophotography. A photoreceptor used in an image forming apparatus using the electrophotographic system is exposed to various contacts and stress in the apparatus, and thus causes deterioration. However, on the other hand, the image forming apparatus Higher reliability is required with the digitization and colorization of the photoconductor, and the life of the photoreceptor is required to be extended. In order to extend the life of the photoconductor, it is necessary to improve the wear resistance. Therefore, it is required to increase the hardness of the surface of the photoconductor.

In many cases, a carbon-based material is used as the surface layer of the photoreceptor.
For example, a method of forming an amorphous silicon carbide surface protective layer using a catalytic CVD method on a photosensitive layer (see Patent Document 2), and a trace amount in amorphous carbon for the purpose of improving moisture resistance and printing durability. Proposed technologies to contain gallium atoms (see Patent Literature 3), technology using amorphous carbon nitride having diamond bonds (see Patent Literature 4), technology using non-single-crystal hydrogenated nitride semiconductor (see Patent Literature 5) Has been.

  Furthermore, it has been proposed to use magnesium fluoride for the surface layer (see Patent Document 6). A surface layer of a photoreceptor using a non-single-crystal group III nitride compound semiconductor using remote plasma has also been proposed (see Patent Document 7).

In contrast to the above-described method of forming a surface layer using vapor deposition, a method of forming a surface layer by a coating method has also been proposed. Among these, in order to improve the wear resistance, it is also known that a surface layer using a polymer compound having a siloxane bond is used.
Japanese Patent Laid-Open No. 10-0455404 JP 2003-316053 A Japanese Patent Laid-Open No. 2-110470 JP 2003-27238 A JP-A-11-186071 JP 2003-29437 A JP-A-11-186071 "Basics of amorphous semiconductors", Ohm H. Reuter et al., Thin Solid Films, Vol. 254, p94 (1995) J. et al. non-Cryst. Solids, Vol. 114, p732 (1989) J. et al. non-Cryst. Solids, Vol. 194, p103 (1996)

  The present invention can be formed on a substrate containing an organic material, and has excellent photoconductive properties, mechanical properties, oxidation resistance, and the like, and a semiconductor film that can stably maintain these properties over time. It is an object to provide an element, a photoreceptor, a process cartridge, and an image forming apparatus.

The above-mentioned subject is achieved by the following embodiment. That is,
The invention of claim 1 includes a substrate, a photosensitive layer, and a surface layer, and the photosensitive layer and the surface layer are laminated on the substrate in this order, and the surface layer is composed of a group 13 element and 2 atomic% or more. The ratio of the total content (atomic%) of the carbon and the oxygen and the content of the group 13 element (atomic%), including 15 atomic% or less of carbon and 20 atomic% or more and 55 atomic% or less of oxygen. Is a photoreceptor having a ratio of 1.2: 1 to 1.9 : 1.

The invention according to claim 2 is the photoconductor according to claim 11, wherein the oxygen is contained in an amount of 30 atomic% to 53 atomic%.

A third aspect of the present invention, the photoconductive layer is a photosensitive member according to claim 1, characterized in that it comprises nitrogen.

The invention of claim 4, wherein the surface layer is a photosensitive member according to claim 1, characterized in that it comprises a hydrogen.

The invention of claim 5, wherein the photosensitive layer is a photosensitive member according to claim 1, characterized in that it comprises an organic material.

According to a sixth aspect of the present invention, there is provided a photosensitive member including a base, a photosensitive layer, and a surface layer, wherein the photosensitive layer and the surface layer are laminated in this order, a charging unit that charges the photosensitive member, and the charging At least one selected from the group consisting of exposure means for exposing the means to form an electrostatic latent image, developing means for developing the electrostatic latent image, and removal means for removing deposits on the photoreceptor; And the surface layer contains a group 13 element, carbon of 2 atomic% to 15 atomic% and oxygen of 20 atomic% to 55 atomic%, A process cartridge characterized in that the ratio of the total content (atomic%) of carbon and oxygen to the content (atomic%) of the group 13 element is 1.2: 1 to 1.9 : 1. is there.

The invention of claim 7 includes a photoconductor comprising a substrate, a photosensitive layer and a surface layer, wherein the photosensitive layer and the surface layer are laminated in this order on the substrate, and charging means for charging the surface of the photoconductor. A latent image forming unit that exposes the surface of the photoreceptor charged by the charging unit to form an electrostatic latent image, and a developing unit that develops the electrostatic latent image with a developer containing toner to form a toner image. And transfer means for transferring the toner image to a recording medium, wherein the surface layer contains a group 13 element, carbon of 2 atomic% to 15 atomic% and oxygen of 20 atomic% to 55 atomic%. The ratio of the sum of the carbon and oxygen contents (atomic%) to the content of the group 13 element (atomic%) is 1.2: 1 to 1.9 : 1. Forming device.

According to the invention described in claim 1, as compared with the case not having this constitution, photoconductive characteristics and mechanical properties, these properties excellent in oxidation resistance and the like are also stable over time It is possible to provide a photoconductor that can be maintained and has excellent water repellency.

According to the invention described in claim 2, as compared with the case not having this constitution, photoconductive characteristics and mechanical properties, these properties excellent in oxidation resistance and the like are also stable over time A photoconductor that can be maintained can be provided.

According to the third aspect of the present invention, it is possible to provide a photoconductor excellent in durability as compared with the case where this configuration is not provided.

According to the fourth aspect of the present invention, electrical stability, chemical stability, and mechanical stability can be improved as compared with the case where the present configuration is not provided.

According to the fifth aspect of the present invention, it is possible to provide a photoconductor capable of realizing high chargeability, high sensitivity, and low cost as compared with the case where this configuration is not provided.

According to the invention described in claim 6 , compared with the case where the present configuration is not provided, the photoconductive property, the mechanical property, the oxidation resistance and the like are excellent, and these properties are stable over time. A process cartridge that can be maintained can be provided.

According to the seventh aspect of the present invention, the photoconductive characteristics, mechanical characteristics, oxidation resistance, etc. are excellent and these characteristics are stable over time as compared with the case where the present configuration is not provided. An image forming apparatus that can be maintained can be provided.

(Semiconductor film)
The semiconductor film of this embodiment is formed over a base material and includes a group 13 element, carbon, and 15 atomic% to 55 atomic% of oxygen.
However, the semiconductor film in the present invention contains a group 13 element, 2 atomic% or more and 15 atomic% or less carbon, and 20 atomic% or more and 55 atomic% or less oxygen, and the sum of the contents of carbon and oxygen (atomic %) And the content (atomic%) of the Group 13 element is 1.2: 1 to 1.9 : 1.

  Although the use of the semiconductor film of this embodiment is not particularly limited, it is preferable to use it as a photoconductive layer of a light receiving element or a surface layer of a photoreceptor. Is available. Note that details of the light receiving element and the photoreceptor using the semiconductor film of this embodiment will be described later.

The semiconductor film of this embodiment can have good water repellency by containing carbon.
The semiconductor film of this embodiment may include only a group 13 element, carbon, and oxygen of 15 atomic% to 55 atomic%, but in addition to this, a fourth element such as hydrogen, nitrogen, May be included as necessary. By including hydrogen, hydrogen compensates for dangling bonds and structural defects generated by the combination of the group 13 element, carbon, and oxygen.

The composition in the thickness direction of the semiconductor film may be uniform, but if it contains a group 13 element, carbon, and 15 atomic% to 55 atomic% of oxygen, the composition has a gradient structure in the film thickness direction. You may have. The semiconductor film may have a single layer configuration or a multilayer configuration.
The concentration distribution of carbon in the thickness direction of the semiconductor film may increase toward the substrate side, the concentration distribution of oxygen may decrease toward the substrate side, and conversely the concentration distribution of carbon on the substrate side. The oxygen concentration distribution may decrease toward the base material side.

The ratio of the total content of carbon and oxygen (atomic%) to the content of group 13 elements (atomic%) is the sum of the content of carbon and oxygen (atomic%): the content of group 13 elements Amount (atomic%) = 0.5: 1 to 3: 1, preferably 1.2: 1 to 2.5: 1, more preferably 1.2: 1 to 1.9: 1. If it is outside this range, there are few portions where tetrahedral bonds are formed, and it becomes ionic molecule-bonded, so that sufficient chemical stability and hardness cannot be obtained.
Further, the oxygen content in the semiconductor film needs to be 15 atomic% or more and 55 atomic% or less, more preferably 20 atomic% or more and 55 atomic% or less, and more preferably 30 atomic% or more and 53 atomic%. More preferably, it is as follows.

  When the oxygen content is less than 15 atomic%, the semiconductor film becomes unstable in an oxygen-containing atmosphere, and hydroxyl groups are generated by oxidation. Therefore, physical properties such as electrical characteristics and mechanical characteristics change over time. cause. From the standpoint of ensuring oxidation resistance, the higher the oxygen content, the better. However, since the number of molecular bonds between the elements in the semiconductor film is two-dimensionally increased, the film lacks hardness. It may become. Therefore, the oxygen content is preferably 55 atomic% or less in practice.

  The carbon content in the semiconductor film is preferably 2 atom% or more and 15 atom% or less, more preferably 2 atom% or more and 10 atom% or less. By setting the carbon content in the semiconductor film to 2 atom% or more and 15 atom% or less, an effect of obtaining a highly water-repellent low energy surface can be obtained.

Here, when hydrogen is contained in the semiconductor film, the hydrogen content in the semiconductor film is preferably in the range of 0.1 atomic% to 30 atomic%, and in the range of 0.5 atomic% to 20 atomic%. The inside is more desirable.
When the hydrogen content is less than 0.1 atomic%, structural disturbances remain built in the film, which may cause electrical instability and insufficient mechanical characteristics. In addition, when it exceeds 30 atomic%, the probability of hydrogen bonding to two or more group 13 elements and carbon atoms increases, and a three-dimensional structure cannot be maintained, and hardness and chemical stability (especially water resistance) Etc. may be insufficient.

  The amount of hydrogen contained in the semiconductor film is preferably in the range of 0.1 atomic% to 50 atomic% with respect to the entire two main elements (group 13 element and oxygen) constituting the semiconductor film, and is preferably 1 atomic%. More preferably, it is in the range of 40 atomic% or less.

  Note that in this embodiment, the hydrogen content in the semiconductor film means a value obtained by hydrogen forward scattering (HFS).

As the HFS,
Accelerator: NEC 3SDH Pelletron, end station: CE & A RBS-400, 3S-R10 was used as a system. For the analysis, the CE & A HYPRA program was used.

The measurement conditions of HFS are as follows.
He ++ ion beam energy: 2.275 eV
Detection angle 160 ° Grazing Angle 30 ° for incident beam

  The measurement by HFS can pick up the hydrogen signal scattered in front of the sample by setting the detector at 30 ° to the He ++ ion beam and the sample at 75 ° from the normal. . At this time, the detector is preferably covered with a thin (10 μm) aluminum foil to remove He atoms scattered together with hydrogen. The quantification is performed by comparing the hydrogen counts of the reference sample and the sample to be measured after normalization with the stopping power. As a reference sample, a sample obtained by ion implantation of H into Si and muscovite were used.

It is known that muscovite has a hydrogen concentration of 60 atomic%.
The H adsorbed on the outermost surface can be obtained by subtracting the amount of H adsorbed on the clean Si surface.

  The presence or absence of hydrogen in the semiconductor film can also be estimated from the intensity of the group 13-hydrogen bond or NH bond using infrared absorption spectrum measurement.

When nitrogen is further contained in the semiconductor film, the nitrogen content in the semiconductor film is preferably within a range of 30 atomic% or less, and more preferably within a range of 15 atomic% or less.
If the nitrogen content exceeds 30 atomic%, hydrogen and NH bonds are formed, and as a result, water repellency may be lowered.

Specifically, as the group 13 element contained in the semiconductor layer, at least one element selected from B, Al, Ga, and In can be used, and two or more elements selected from these elements can be used. Can also be used in combination.
In this case, the combination of the contents of these atoms in the semiconductor is not limited, but among the above four elements, in the case of In, absorption is in the visible light region, and elements other than In are absorbed in the visible light region. Therefore, by selecting the group 13 element to be used, it is possible to adjust the wavelength range sensitive to light of the semiconductor film. For example, when the semiconductor film of this embodiment is used as a photoconductive layer of a light receiving element, an element can be selected so that a sensitivity wavelength region is a visible light region. In addition, when the semiconductor film of the present embodiment is used as a surface layer of a photoconductor, in an image forming apparatus provided with the photoconductor, an electrostatic latent image is formed on the photoconductor provided in the image forming apparatus. In addition, it is necessary to select an element so as not to absorb the light as much as possible with respect to the exposure wavelength of the exposure light applied to the photoconductor and the erase wavelength applied to the photoconductor during the static elimination process. .

  Note that in this embodiment, the contents of group 13 elements and elements such as carbon, oxygen, and nitrogen in the semiconductor film are values obtained by Rutherford back scattering (RBS) including distribution in the film thickness direction. I mean.

  As the RBS, an accelerator: NEC 3SDH Pelletron, an end station: CE & A RBS-400 was used, and 3S-R10 was used as the system. The analysis used the CE & A HYPRA program.

The RBS measurement conditions are as follows.
He ++ ion beam energy is 2.275 eV
Detection angle 160 °
Grazing angle 109 ° with respect to the incident beam

  In the RBS measurement, a He ++ ion beam is incident substantially perpendicular to the sample, a detector is set at 160 ° with respect to the ion beam, and the backscattered He signal is measured. The composition ratio and the film thickness are determined from the detected energy and intensity of He. Further, the spectrum may be measured at two detection angles in order to improve the accuracy of obtaining the composition ratio and the film thickness. In addition, the accuracy can be improved by performing cross check by measuring at two detection angles having different depth direction resolution and backscattering dynamics.

  The number of He atoms back-scattered by the target atom is determined only by three factors: 1) the atomic number of the target atom, 2) the energy of the He atom before scattering, and 3) the scattering angle. The density is assumed by calculation from the measured composition, and this is used to calculate the film thickness. The density error is within 20%.

  The crystallinity / non-crystallinity of the semiconductor film is not particularly limited, but it may be microcrystalline, polycrystalline, or amorphous.

These crystal states can be measured by X-ray diffraction, electron beam diffraction, observation of a cross-sectional shape using an electron microscope, and the like. In such a measurement method, since the crystal state is confirmed over the entire substrate or film, X-ray diffraction using a diffractometer capable of measuring a wide range at a time is suitable. However, when the film thickness is 1 μm or less, the reflection intensity of X-rays from the film is not sufficient, and a reflection component that is not detected by X-ray diffraction may occur. In such a case, low-energy electron diffraction is more suitable.
The amorphous is, for example, a transmission electron diffraction pattern or a low-energy electron diffraction pattern that does not have a ring-shaped diffraction pattern at all, and a hazy pattern completely lacking long-range order. It refers to those in which a ring-like diffraction pattern is seen, and those in which bright spots are seen. However, such an amorphous film often has almost no peak in the X-ray diffraction measurement in which a wider range than the transmission electron diffraction is observed.
The crystal system of the microcrystals may be any one of a cubic system and a hexagonal system, and a plurality of crystal systems may be mixed. The size of the microcrystal is 5 nm to 10 μm, preferably 10 nm to 10 μm, more preferably 15 nm to 10 μm. The size of the microcrystal can be measured by X-ray diffraction, electron beam diffraction, shape measurement using a cross-sectional electron micrograph, or the like. The microcrystal refers to, for example, a transmission electron beam diffraction pattern in which many bright spots are seen together with a ring-shaped diffraction pattern, or a spot-like bright spot is only seen. However, in such a film made of microcrystals, a peak corresponding to a crystal plane is slightly obtained in X-ray diffraction measurement, but the peak intensity is weaker than that of a single crystal and the peak width is a single crystal. It is often wide compared.
The polycrystal may be a collection of crystals including a plurality of plane orientations. Further, it may be a collection of microcrystals that are highly oriented and mainly grown in a certain plane orientation. In this case, small columnar crystals may be arranged in the growth direction. The size of the columnar crystal is 1 nm to 10 μm, preferably 5 nm to 10 μm, more preferably 10 nm to 10 μm. Such a polycrystalline film mainly exhibits a single crystal plane peak in X-ray diffraction measurement, has a strong peak intensity, and a narrow peak half-value width. This half-value width is 1 arcmin to 1 °, preferably 1 arcmin to 0.5 °, and more preferably 1 arcmin to 0.1 °. The collection and size of crystals including a plurality of plane orientations can be measured by transmission electron micrographs and scanning electron micrographs.

  Note that the semiconductor film may be amorphous containing microcrystals or microcrystalline / polycrystalline containing amorphous because of stability or hardness, but the semiconductor film surface may be smooth or have friction. Is preferably amorphous. Crystallinity / amorphous property can be determined by the presence or absence of a point or a line in a diffraction image obtained by RHEED (reflection high-energy electron diffraction) measurement. Amorphousness can also be determined by the absence of a sharp peak specific to the diffraction angle even by X-ray diffraction spectrum measurement.

  Various dopants can be added to the semiconductor film in order to control the conductivity type and the conductivity. When controlling the conductivity of the semiconductor film to n-type, for example, one or more elements selected from Si, Ge, and Sn can be used, and when controlling to p-type, for example, Be, Mg One or more elements selected from Ca, Zn and Sr can be used. Further, this semiconductor which is not usually doped has many n-types, and an element used for p-type conversion can be used in order to further increase the dark resistance.

In this embodiment, “conductive” means that the volume resistivity is 10 ⁹ Ω · cm or less, and “insulating” means that the volume resistivity is 10 ¹⁰ Ω · cm or more. ing.

The semiconductor film of this embodiment has a bond defect, a dislocation defect, and a grain boundary defect in its internal structure regardless of whether the crystallinity / non-crystallinity is microcrystalline, polycrystalline, or amorphous. Etc. tend to be included. For this reason, hydrogen and / or a halogen element may be contained in the semiconductor film in order to inactivate these defects. Hydrogen and halogen elements in the semiconductor film are incorporated into bonding defects, etc., which eliminates reactive sites and performs electrical compensation, thereby suppressing traps related to carrier diffusion and movement in the semiconductor film. Is done.
Therefore, when the semiconductor film of the present embodiment is used for the photoconductive layer of the light receiving element, the photocurrent in the light receiving element is stabilized, and the semiconductor film of the present embodiment is used for the surface layer of the photoreceptor. If charging and exposure are repeated, the residual potential on the surface of the photoreceptor due to internal accumulation of charges and the cycle up thereof are suppressed, and the charging characteristics are further stabilized.

(Light receiving element)
Next, a light receiving element using the semiconductor film of this embodiment will be described. The light receiving element of this embodiment includes a base, a photoconductive layer, and an electrode, and the semiconductor film of this embodiment is used as a layer constituting the photoconductive layer.
However, the light receiving element in the present invention includes a group 13 element, 2 atomic% or more and 15 atomic% or less carbon, and 15 atomic% or more and 55 atomic% or less oxygen. %) And the content (atomic%) of the Group 13 element is 1.2: 1 to 2.5: 1.

  The semiconductor film of this embodiment functions as a photoconductive layer of the light receiving element, and the photoconductivity may occur in an electric field applied from the outside, or an internal voltage is generated between the substrate and the electrode. However, the photocurrent may be photoconductive.

  In the present embodiment, “photoconductivity” means that the current is increased by light irradiation with respect to the dark current, and the photoconductive layer is a layer having this characteristic.

As shown in FIG. 7, the light receiving element 50 of the present embodiment is configured, for example, by laminating a photoconductive layer 54 using the semiconductor film described above and an electrode 56 in this order on a conductive base 52. Yes.
In the example shown in FIG. 7, the case where the photoconductive layer 54 is a single layer will be described. However, as described in Japanese Patent Application No. 10-17203, a two-layer structure or a three-layer structure is used. There may be.

  As the base 52 used in the light receiving element 50 of the present embodiment, a conductive substrate or an insulating substrate in which an electrode is provided on the side in contact with the photoconductive layer can be used. The crystalline substrate or the insulating substrate may be either crystalline or non-quality.

Examples of the conductive substrate include metals such as aluminum, stainless steel, nickel, and chromium and alloy crystals thereof, and semiconductors such as Si, GaAs, SiC, and ZnO.
Examples of the insulating substrate include a polymer film, glass, quartz, and ceramic. The electrode can be formed (conductive treatment) by depositing a metal, gold, silver, copper, or the like as listed above on an insulating substrate by vapor deposition, sputtering, ion plating, or the like. .

In the light receiving element 50 of the present embodiment, when light is incident on (or receives light from) the photoconductive layer 54 via the base 52, the base 52 is a substrate that is transparent to this light ( Hereinafter, it is referred to as a translucent substrate).
In this embodiment, “translucency” indicates a property of transmitting 80% or more of light having a wavelength of 380 to 780 nm.

  As a material constituting the translucent substrate, transparent inorganic materials such as glass, quartz, sapphire, fluorine resin, polyester, polycarbonate, polyethylene, polyethylene terephthalate (hereinafter also referred to as “PET”), Transparent organic resin films or plates such as epoxies, optical fibers, and SELFOC optical plates can be used.

The photoconductive layer 54 may be a single-layer semiconductor film (see the photoconductive layer 54 in FIG. 7) adjusted to undope, p-type, i-type, or n-type. The n-type layer and the n-type layer may be stacked to form a pn junction, or a multi-layer structure in which an i-type layer is provided between the p-type layer and the n-type layer may be employed. In the case of a multilayer structure, a p + type layer or an n + type layer doped with a p-type or n-type adjusting element at a higher concentration may be provided as a layer in contact with the electrode of the photoconductive layer. In addition, a multilayer structure having a pn structure or a pin structure as a unit can be formed. Furthermore, each of these p-type, i-type, and n-type layers may have a different composition for transparency and barrier formation, and each of the p-type, i-type, and n-type layers may be different. It may consist of a composition layer.
The thickness of each of the p-type, i-type, and n-type layers may be from 1 nm to several tens of micrometers. Lamination and repetition of the same film thickness may be used, or lamination and repetition of different film thicknesses may be used, and can be set according to the light absorption rate, the electric field of the active portion, the barrier length, and the like.
In the case where the photoconductive layer 54 has a single layer structure, the photoconductive layer 54 is formed of the semiconductor film of the present embodiment. However, in the case where the photoconductive layer 54 has a multilayer structure, at least one of the layers is formed. Any semiconductor film may be used in this embodiment mode, but all the layers are preferably formed using the semiconductor film in this embodiment mode.

  An electrode having translucency is used as the electrode 56. This electrode is made of a transparent conductive material such as ITO (Indium Tin Oxide), zinc oxide, tin oxide, lead oxide, indium oxide, copper iodide, etc., and formed by a method such as vapor deposition, ion plating, sputtering, Or you may use what formed metals, such as Al, Ni, Au, Ni, Co, Ag, thinly by vapor deposition or sputtering. In addition, when light is incident on the photoconductive layer 54 from the side where the electrode 56 is provided, light such as Al, Ni, Au, Ni, Co, or Ag is transmitted by vapor deposition or sputtering. Thus, the thickness of the electrode 56 is adjusted, and the thickness is preferably 5 nm or more and 100 nm or less. If the thickness of the electrode 56 is less than 5 nm, the light transmittance may be large but the electrical resistance may be high. As the electrode 56, an oxide semiconductor that is transparent to ultraviolet rays (transmits light having a wavelength longer than 300 nm by 60% or more) can be used.

When an insulating substrate having an electrode provided on the surface in contact with the photoconductive layer 54 is used as the base 52, it is particularly preferable to use an organic polymer film as the insulating substrate. When a transparent organic polymer film is used as an insulating substrate, a transparent conductive electrode made of ITO, zinc oxide, tin oxide, lead oxide, indium oxide, copper iodide or the like is formed on the surface of the substrate. .

(Photoconductor)
Next, a photoconductor using the semiconductor film of this embodiment will be described.
The photoreceptor of the present embodiment includes a substrate, a photosensitive layer, and a surface layer, and the photosensitive layer and the surface layer are laminated in this order on the substrate, and the semiconductor film of the present embodiment is used as the surface layer. Is used.
The photoconductor of the present embodiment uses the semiconductor film of the present embodiment as a surface layer, and the surface layer contains an oxide of a group 13 element. Therefore, ozone generated by a charger in the image forming apparatus. Since the surface of the photoreceptor itself is not easily oxidized in an oxidizing atmosphere such as nitrogen oxide, the deterioration of the photoreceptor due to oxidation can be prevented. Moreover, since it is excellent in mechanical durability and oxidation resistance, it is easy to maintain these characteristics at a high level over a long period of time.
Furthermore, when the surface layer contains hydrogen, the surface energy of the outermost surface of the surface layer becomes small, so that the adhesion of the discharge product can be suppressed, and the occurrence of image defects due to the adhesion of the discharge product can also be suppressed. In addition, since the friction coefficient of the outermost surface of the surface layer is reduced, the progress of wear and the generation of scratches can be further suppressed.

  The photoreceptor of the present embodiment is not particularly limited as long as the layer structure is such that a photosensitive layer and a surface layer are laminated in this order on a substrate, and will be described later between these three layers as necessary. An intermediate layer such as an undercoat layer may be provided. Further, the photosensitive layer may be two or more layers, and further may be a function separation type. Further, the photoreceptor of the present embodiment may be a so-called amorphous silicon photoreceptor in which a photosensitive layer described later contains silicon atoms, and the photosensitive layer is a so-called organic photoreceptor containing an organic material such as an organic photosensitive material. Is preferred. In the case of an organic photoreceptor, wear is likely to occur, but wear can be suppressed by using the semiconductor film of the present embodiment as a surface layer.

Hereinafter, specific examples of the layer structure of the photoreceptor of the present embodiment will be described in more detail with reference to the drawings.

FIG. 1 is a schematic cross-sectional view showing an example of the layer structure of the photoreceptor of the present embodiment. In FIG. 1, 1 is a substrate, 2 is a photosensitive layer, 2A is a charge generation layer, 2B is a charge transport layer, 3 Represents a surface layer.
The photoreceptor shown in FIG. 1 has a layer structure in which a charge generation layer 2A, a charge transport layer 2B, and a surface layer 3 are laminated in this order on a substrate 1, and the photosensitive layer 2 is composed of a charge generation layer 2A and a charge transport layer. It consists of two layers of 2B.
FIG. 2 is a schematic cross-sectional view showing another example of the layer structure of the photoconductor of the present embodiment. In FIG. 2, 4 represents an undercoat layer, 5 represents an intermediate layer, and others are shown in FIG. It is the same as that shown.
The photoreceptor shown in FIG. 2 has a layer structure in which an undercoat layer 4, a charge generation layer 2A, a charge transport layer 2B, an intermediate layer 5, and a surface layer 3 are laminated on a substrate 1 in this order.
FIG. 3 is a schematic cross-sectional view showing another example of the layer structure of the photoreceptor of this embodiment. In FIG. 3, 6 represents the photosensitive layer, and the others are those shown in FIGS. It is the same.
3 has a layer structure in which an undercoat layer 4, a photosensitive layer 6, and a surface layer 3 are laminated in this order on a substrate 1, and the photosensitive layer 6 has the charge shown in FIG. 1 and FIG. This is a layer in which the functions of the generation layer 2A and the charge transport layer 2B are integrated.
The photosensitive layer 2 and the photosensitive layer 6 may be formed from an organic polymer, may be formed from an inorganic material, or may be a combination thereof.

-Organic photoconductor-
Next, an outline of a preferable configuration when the photoconductor of the present embodiment is an organic photoconductor will be described.
The organic polymer compound forming the photosensitive layer may be thermoplastic or thermosetting, or may be formed by reacting two types of molecules. Further, an intermediate layer may be provided between the photosensitive layer and the surface layer from the viewpoints of adjusting hardness, expansion coefficient, elasticity, and improving adhesion. The intermediate layer preferably exhibits intermediate characteristics with respect to both the physical properties of the surface layer and the photosensitive layer (charge transport layer in the case of the function separation type). In the case where an intermediate layer is provided, the intermediate layer may function as a layer for trapping charges.

  In the case of an organic photoreceptor, the photosensitive layer may be a function-separated type that is divided into a charge generation layer and a charge transport layer as shown in FIGS. 1 and 2, or a function-integrated type as shown in FIG. May be. In the case of the function separation type, a charge generation layer may be provided on the surface side of the photoreceptor, or a charge transport layer may be provided on the surface side.

When the surface layer is formed on the photosensitive layer by the method described later, in order to prevent the photosensitive layer from being decomposed by irradiation with short-wave electromagnetic waves other than heat, the surface of the photosensitive layer is formed before the surface layer is formed. A short wavelength light absorption layer such as ultraviolet rays may be provided in advance. In addition, a layer having a small band gap can be formed first in the initial stage of forming the surface layer so that the short wavelength light is not irradiated onto the photosensitive layer. As the composition of the layer having a small band gap provided on the photosensitive layer side, for example, the group 13 element ratio including In is preferably Ga _X In _(1-X) (0 ≦ X ≦ 0.99). The same conditions as described above are used for oxygen and carbon.

In addition, a layer containing an ultraviolet absorber (for example, a layer formed by coating a layer dispersed in a polymer resin) may be provided on the surface of the photosensitive layer.
As described above, by providing an intermediate layer on the surface of the photoreceptor before forming the surface layer, ultraviolet rays when forming the surface layer, corona discharge when the photoreceptor is used in the image forming apparatus, and various types of The influence on the photosensitive layer by short wavelength light such as ultraviolet rays from the light source can be prevented.

-Amorphous silicon photoconductor-
Next, an outline of a preferable configuration when the photoconductor of the present embodiment is an amorphous silicon photoconductor will be described.
The amorphous silicon photoreceptor may be a positively charged photoreceptor or a negatively charged photoreceptor. An undercoating layer for preventing charge injection and improving adhesion can be formed on a conductive substrate, and then a photoconductive layer and a surface layer can be used. For the surface layer, an intermediate layer may be provided on the surface of the photosensitive layer, and a surface layer may be further provided on the surface, or a surface layer may be provided directly on the surface of the photosensitive layer.
The uppermost layer (surface layer side layer) of the photosensitive layer may be p-type amorphous silicon or n-type amorphous silicon, and an intermediate layer (charge injection blocking) between the photosensitive layer and the surface layer. As the layer), for example, Si _X O (1- _X ): H, Si _X N (1- _X ): H, Si _X C (1- _X ): H, an amorphous carbon layer may be formed.

-Surface layer-
Next, preferable characteristics and the like of the surface layer of the present embodiment will be described in more detail.
As described above, the surface layer may be either amorphous or crystalline. However, in order to improve the adhesion with the photosensitive layer (or the intermediate layer) and improve the sliding of the surface of the photoreceptor, the surface layer is It is preferably amorphous. Further, the photosensitive layer side of the surface layer may be microcrystalline, and the side farthest from the photosensitive layer may be amorphous.

The surface layer may be injected into the surface layer during charging. In this case, charges must be trapped at the interface between the surface layer and the photosensitive layer. Moreover, electric charges may be trapped on the surface of the surface layer. For example, when the photosensitive layer is a function separation type as shown in FIGS. 1 and 2, when the surface layer injects electrons with negative charge, the surface of the charge transport layer on the surface layer side functions as a charge trap. Alternatively, an intermediate layer may be provided between the charge transport layer and the surface layer for blocking and trapping charge injection. The same applies to the case of positive charging.
The thickness of the surface layer is preferably in the range of 0.01 μm to 5 μm. If the thickness is 0.01 μm or less, it is easily affected by the photosensitive layer, and the mechanical strength may be insufficient. On the other hand, when the thickness is 5 μm or more, the residual potential increases due to repeated charging and exposure, and the mechanical internal stress on the photosensitive layer increases, and peeling or cracking is likely to occur.

The surface layer may also function as a charge injection blocking layer or a charge injection layer. In this case, the surface layer can also function as a charge injection blocking layer or a charge injection layer by adjusting the conductivity type of the semiconductor film of the surface layer to n-type or p-type as described above.
When the surface layer also functions as a charge injection layer, charges are trapped on the surface of the intermediate layer or the photosensitive layer (surface on the surface layer side). In the case of negative charging, the n-type surface layer functions as a charge injection layer, and the p-type surface layer functions as a charge injection blocking layer. In the case of positive charging, the n-type surface layer functions as a charge injection blocking layer, and the p-type surface layer functions as a charge injection layer.
In order to maintain the electrostatic latent image, an i-type semiconductor film having a high resistance may be formed as the surface layer. Here, “high resistance” means that the volume resistivity is a value of 10 ¹² Ωcm or more.

-Substrate and photosensitive layer-
Next, with respect to details of the substrate and photosensitive layer constituting the photosensitive member of the present embodiment, and details of the undercoat layer and intermediate layer provided as necessary, the photosensitive member of the present embodiment is a function-separated type photosensitive member. The case where it is for an organic photoreceptor having a layer will be described.

-Substrate-
As the substrate, a metal drum such as aluminum, copper, iron, stainless steel, zinc, nickel, etc .; aluminum, copper, gold, silver, platinum, palladium, titanium, nickel-chromium on a substrate such as sheet, paper, plastic, glass, etc. , Stainless steel, copper-indium and other metals deposited; conductive metal compounds such as indium oxide and tin oxide deposited on the substrate; metal foil laminated on the substrate; carbon black, oxidized Indium, tin oxide-antimony oxide powder, metal powder, copper iodide and the like are dispersed in a binder resin and applied to the substrate to conduct a conductive treatment. Further, the shape of the substrate may be any of a drum shape, a sheet shape, and a plate shape.

  When a metal tubular substrate is used as the substrate, the surface of the metal tubular substrate may be a raw tube, but the surface of the substrate may be roughened by surface treatment in advance. . Such roughening can prevent grain-like density unevenness due to interference light that can be generated inside the photosensitive member when a coherent light source such as a laser beam is used as the exposure light source. Examples of the surface treatment method include mirror cutting, etching, anodizing, rough cutting, centerless grinding, sand blasting, and wet honing.

  In particular, from the standpoint of improving adhesion to the photosensitive layer and improving film formability, it is preferable to use an anodized surface of the aluminum substrate as described below.

Hereinafter, a method for producing a substrate having an anodized surface will be described. First, pure aluminum or an aluminum tube (for example, alloy numbers 1000, 3000, and 6000 series aluminum or aluminum alloy defined in JISH4080) is prepared as a base. Next, an anodizing process is performed. The anodizing treatment is performed in an acidic bath of chromic acid, sulfuric acid, oxalic acid, phosphoric acid, boric acid, sulfamic acid, etc., and a treatment using a sulfuric acid bath is often used. The anodizing treatment is, for example, sulfuric acid concentration: 10 mass% to 20 mass%, bath temperature: 5 ° C. to 25 ° C., current density: 1 A / dm ^{2 to} 4 A / dm ² and electrolysis voltage: 5 V to 30 V. The treatment time is 5 to 60 minutes, but is not limited thereto.

  The anodized film formed on the aluminum substrate in this way is porous, has high insulating properties, and has an unstable surface, so that its physical property values tend to change over time after the film is formed. ing. In order to prevent the change of the physical property values, the anodized film is further sealed. Examples of the sealing treatment include a method of immersing the anodized film in an aqueous solution containing nickel fluoride and nickel acetate, a method of immersing the anodized film in boiling water, and a method of treating with pressurized steam. Of these methods, a method of immersing in an aqueous solution containing nickel acetate is often used.

On the surface of the anodic oxide film that has been subjected to the sealing treatment in this way, an excessive amount of metal salt or the like attached by the sealing treatment remains. If this metal salt or the like is excessively left on the anodic oxide film of the substrate, not only does it adversely affect the quality of the coating film formed on the anodic oxide film, but generally low resistance components tend to remain. When an image is formed using this substrate as a photoconductor, it causes a background stain. Here, “low resistance” indicates that the volume resistivity is a value of 10 ² Ωcm or less.

  Therefore, following the sealing process, an anodic oxide film is cleaned to remove metal salts and the like attached by the sealing process. The cleaning treatment may be performed by cleaning the substrate once with pure water, but the substrate is preferably cleaned by a multi-step cleaning process. At this time, a cleaning liquid that is as clean as possible (deionized) is used as the cleaning liquid in the final cleaning step. Moreover, it is more preferable to perform physical rubbing cleaning using a contact member such as a brush in any one of the multi-step cleaning steps.

  The film thickness of the anodized film on the substrate surface formed as described above is preferably in the range of about 3 μm to 15 μm. On the anodized film, there is a layer called a barrier layer along the porous extreme surface of the porous anodized film. The film thickness of the barrier layer is preferably in the range of 1 nm to 100 nm in the photoreceptor used in this embodiment. As described above, an anodized substrate can be obtained.

  The substrate thus obtained has a high carrier blocking property in the anodized film formed on the substrate by anodization. Therefore, it is possible to prevent point defects (black spots, background stains) that occur when a photosensitive member using this substrate is mounted on an image forming apparatus and is subjected to reversal development (negative / positive development), and contact charging. It is possible to prevent a current leakage phenomenon from the contact charger that is sometimes generated. Further, by subjecting the anodized film to a sealing treatment, it is possible to prevent a change in physical property values with time after the preparation of the anodized film. Further, by washing the substrate after the sealing treatment, metal salts and the like attached to the substrate surface by the sealing treatment can be removed, and an image is formed by an image forming apparatus equipped with a photoconductor produced using the substrate. The formation of soil can be prevented when the is formed.

-Undercoat layer-
Next, the undercoat layer will be described. The material constituting the undercoat layer is acetal resin such as polyvinyl butyral; polyvinyl alcohol resin, casein, polyamide resin, cellulose resin, gelatin, polyurethane resin, polyester resin, methacrylic resin, acrylic resin, polyvinyl chloride resin, polyvinyl acetate In addition to polymer resin compounds such as resin, vinyl chloride-vinyl acetate-maleic anhydride resin, silicone resin, silicone-alkyd resin, phenol-formaldehyde resin, melamine resin, zirconium, titanium, aluminum, manganese, silicon atoms, etc. Examples thereof include organometallic compounds.
These compounds can be used alone or as a mixture or polycondensate of a plurality of compounds. Among these, an organometallic compound containing zirconium or silicon is preferably used because it has a low residual potential and a small potential change due to the environment and a small potential change due to repeated use. In addition, the organometallic compound can be used alone or in combination of two or more, or further mixed with the above-described binder resin.

  As organic silicon compounds (organometallic compounds containing silicon atoms), vinyltrimethoxysilane, γ-methacryloxypropyl-tris (β-methoxyethoxy) silane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane , Γ-glycidoxypropyltrimethoxysilane, vinyltriacetoxysilane, γ-mercaptopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, N-β- (aminoethyl) -γ-aminopropyltrimethoxysilane, N Examples include -β- (aminoethyl) -γ-aminopropylmethylmethoxysilane, N, N-bis (β-hydroxyethyl) -γ-aminopropyltriethoxysilane, and γ-chloropropyltrimethoxysilane. Among these, vinyltriethoxysilane, vinyltris (2-methoxyethoxysilane), 3-methacryloxypropyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxy Silane, N-2- (aminoethyl) 3-aminopropyltrimethoxysilane, N-2- (aminoethyl) 3-aminopropylmethyldimethoxysilane, 3-aminopropyltriethoxysilane, N-phenyl-3-aminopropyl Silane coupling agents such as trimethoxysilane, 3-mercaptopropyltrimethoxysilane, and 3-chloropropyltrimethoxysilane are preferably used.

  Examples of organozirconium compounds (zirconium-containing organometallic compounds) include zirconium butoxide, zirconium zirconium acetoacetate, zirconium triethanolamine, acetylacetonate zirconium butoxide, ethyl acetoacetate zirconium butoxide, zirconium acetate, zirconium oxalate, zirconium lactate, Zirconium phosphonate, zirconium octoate, zirconium naphthenate, zirconium laurate, zirconium stearate, zirconium isostearate, methacrylate zirconium butoxide, stearate zirconium butoxide, isostearate zirconium butoxide and the like.

  Examples of organotitanium compounds (organometallic compounds containing titanium) include tetraisopropyl titanate, tetranormal butyl titanate, butyl titanate dimer, tetra (2-ethylhexyl) titanate, titanium acetylacetonate, polytitanium acetylacetonate, titanium octylene. Examples include glycolate, titanium lactate ammonium salt, titanium lactate, titanium lactate ethyl ester, titanium triethanolamate, polyhydroxy titanium stearate and the like.

  Examples of organoaluminum compounds (aluminum-containing organometallic compounds) include aluminum isopropylate, monobutoxyaluminum diisopropylate, aluminum butyrate, diethyl acetoacetate aluminum diisopropylate, and aluminum tris (ethyl acetoacetate).

  Moreover, as a solvent used for the undercoat layer forming coating solution for forming the undercoat layer, known organic solvents, for example, aromatic hydrocarbon solvents such as toluene and chlorobenzene, methanol, ethanol, n-propanol, Aliphatic alcohol solvents such as iso-propanol and n-butanol, ketone solvents such as acetone, cyclohexanone and 2-butanone, halogenated aliphatic hydrocarbon solvents such as methylene chloride, chloroform and ethylene chloride, tetrahydrofuran, dioxane and ethylene Examples thereof include cyclic or linear ether solvents such as glycol and diethyl ether, and ester solvents such as methyl acetate, ethyl acetate, and n-butyl acetate. These solvents can be used alone or in admixture of two or more. As a solvent that can be used when two or more solvents are mixed, any solvent can be used as long as it can dissolve the binder resin as a mixed solvent.

  The undercoat layer is formed by first preparing an undercoat layer forming coating solution prepared by dispersing and mixing an undercoat layer coating agent and a solvent and applying the prepared undercoat layer coating solution to the substrate surface. As a coating method for the coating solution for forming the undercoat layer, it is possible to use usual methods such as a dip coating method, a ring coating method, a wire bar coating method, a spray coating method, a blade coating method, a knife coating method, and a curtain coating method. it can. In the case of forming the undercoat layer, it is preferable that the film thickness be in the range of 0.1 μm to 3 μm. By setting the film thickness of the undercoat layer within this film thickness range, it is possible to prevent a potential increase due to desensitization and repetition without excessively increasing the electrical barrier.

  By forming the undercoat layer on the substrate in this way, it is possible to improve the wettability when applying and forming the layer formed on the undercoat layer and to function as an electrical blocking layer. Can be fulfilled.

The surface roughness of the undercoat layer formed as described above is 1 / (4n) times the exposure laser wavelength λ used (where n is the refractive index of the layer provided on the outer peripheral side of the undercoat layer) to It is possible to adjust to have a roughness within a range of about 1 time. The surface roughness is adjusted by adding resin particles to the coating solution for forming the undercoat layer. Thereby, when a photoreceptor prepared by adjusting the surface roughness of the undercoat layer is used in an image forming apparatus, an interference fringe image by a laser light source can be further prevented.
As the resin particles, silicone resin particles, cross-linked polymethyl methacrylate resin particles, and the like can be used. In addition, the surface of the undercoat layer can be polished to adjust the surface roughness. As a polishing method, buffing, sand blasting, wet honing, grinding, or the like can be used. In the photosensitive member used for the positively charged image forming apparatus, the laser incident light is absorbed around the extreme surface of the photosensitive member and further scattered in the photosensitive layer, so the surface roughness of the undercoat layer is adjusted. Is not strongly required.

  It is also preferable to add various additives to the coating solution for forming the undercoat layer in order to improve electrical characteristics, environmental stability, and image quality. Additives include quinone compounds such as chloranil, bromoanil and anthraquinone, tetracyanoquinodimethane compounds, fluorenones such as 2,4,7-trinitrofluorenone and 2,4,5,7-tetranitro-9-fluorenone Compounds, 2- (4-biphenyl) -5- (4-t-butylphenyl) -1,3,4-oxadiazole and 2,5-bis (4-naphthyl) -1,3,4-oxadi Azoles, oxadiazole compounds such as 2,5-bis (4-diethylaminophenyl) 1,3,4 oxadiazole, xanthone compounds, thiophene compounds, 3,3 ′, 5,5 ′ tetra-t-butyl Electron transporting substances such as diphenoquinone compounds such as diphenoquinone, electron transporting pigments such as polycyclic condensation systems and azo systems, zirconium chelate compounds, tita Umukireto compounds, aluminum chelate compounds, titanium alkoxide compounds, organic titanium compounds, there can be used a known material such as a silane coupling agent.

  Specific examples of the silane coupling agent used here include vinyltrimethoxysilane, γ-methacryloxypropyl-tris (β-methoxyethoxy) silane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ. -Glycidoxypropyltrimethoxysilane, vinyltriacetoxysilane, γ-mercaptopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, N-β- (aminoethyl) -γ-aminopropyltrimethoxysilane, N-β Examples include silane coupling agents such as-(aminoethyl) -γ-aminopropylmethylmethoxysilane, N, N-bis (β-hydroxyethyl) -γ-aminopropyltriethoxysilane, and γ-chloropropyltrimethoxysilane. Is not limited to these There.

  Specific examples of the zirconium chelate compound include zirconium butoxide, zirconium zirconium acetoacetate, zirconium triethanolamine, acetylacetonate zirconium butoxide, ethyl acetoacetate butoxide, zirconium acetate, zirconium oxalate, zirconium lactate, zirconium phosphonate, zirconium octoate. , Zirconium naphthenate, zirconium laurate, zirconium stearate, zirconium isostearate, methacrylate zirconium butoxide, stearate zirconium butoxide, isostearate zirconium butoxide and the like.

  Specific examples of the titanium chelate compound include tetraisopropyl titanate, tetranormal butyl titanate, butyl titanate dimer, tetra (2-ethylhexyl) titanate, titanium acetylacetonate, polytitanium acetylacetonate, titanium octylene glycolate, titanium lactate ammonium. Examples thereof include salts, titanium lactate, titanium lactate ethyl ester, titanium triethanolamate, and polyhydroxytitanium stearate.

  Specific examples of the aluminum chelate compound include aluminum isopropylate, monobutoxy aluminum diisopropylate, aluminum butyrate, diethyl acetoacetate aluminum diisopropylate, aluminum tris (ethyl acetoacetate) and the like.

  These additives can be used alone, but can also be used as a mixture or polycondensate of a plurality of compounds.

In addition, it is preferable that the above-described undercoat layer forming coating solution contains at least one electron accepting substance. Specific examples of the electron accepting substance include succinic anhydride, maleic anhydride, dibromomaleic anhydride, phthalic anhydride, tetrabromophthalic anhydride, tetracyanoethylene, tetracyanoquinodimethane, o-dinitrobenzene, m-di Examples include nitrobenzene, chloranil, dinitroanthraquinone, trinitrofluorenone, picric acid, o-nitrobenzoic acid, p-nitrobenzoic acid, phthalic acid and the like. Of these, fluorenone-based, quinone-based, and benzene derivatives having an electron-withdrawing substituent such as Cl, CN, NO ₂ are more preferably used. As a result, the photosensitivity layer can be improved in photosensitivity and the residual potential can be reduced, and the photosensitivity deterioration when repeatedly used can be reduced. The undercoat layer includes a photoconductor containing an electron-accepting substance. It is possible to prevent density unevenness of the toner image formed by the image forming apparatus.

  Moreover, it is also preferable to use the following dispersion type undercoat layer coating agent instead of the above undercoat layer coating agent. Accordingly, accumulation of residual charges can be prevented by appropriately adjusting the resistance value of the undercoat layer, and the thickness of the undercoat layer can be increased. In particular, leakage during contact charging can be prevented.

Examples of the coating agent for the dispersion type undercoat layer include metal powders such as aluminum, copper, nickel, and silver, conductive metal oxides such as antimony oxide, indium oxide, tin oxide, and zinc oxide, carbon fiber, carbon Examples thereof include a conductive resin such as black or graphite powder dispersed in a binder resin. As the conductive metal oxide, metal oxide particles having an average primary particle size of 0.5 μm or less are preferably used. If the average primary particle size is too large, local conductive path formation is likely to occur, current leakage is likely to occur, and as a result, fogging or large current leakage from the charger may occur. The undercoat layer needs to be adjusted to an appropriate resistance value in order to improve leakage resistance. Therefore, the metal oxide particles described above preferably have a powder resistance of about 10 ² Ω · cm to 10 ¹¹ Ω · cm.

  In addition, if the resistance value of the metal oxide particles is lower than the lower limit of the above range, sufficient leakage resistance cannot be obtained, and if the resistance value is higher than the upper limit of this range, the residual potential may be increased. Accordingly, metal oxide particles such as tin oxide, titanium oxide, and zinc oxide having a resistance value within the above range are more preferably used. Moreover, 2 or more types of metal oxide particles can be mixed and used. Furthermore, the resistance of the powder can be controlled by subjecting the metal oxide particles to a surface treatment with a coupling agent. As the coupling agent that can be used at this time, the same material as the coating liquid for forming the undercoat layer described above can be used. Moreover, these coupling agents can also be used in mixture of 2 or more types.

For the surface treatment of the metal oxide particles, any known method can be used, but a dry method or a wet method can be used.
In the case of using the dry method, first, the metal oxide particles are dried by heating to remove surface adsorbed water. By removing the surface adsorbed water, the coupling agent can be uniformly adsorbed on the surface of the metal oxide particles. Next, while the metal oxide particles are stirred with a mixer having a large shearing force or the like, the coupling agent dissolved directly or in an organic solvent or water is dropped and sprayed together with dry air or nitrogen gas to be uniformly treated. . When adding or spraying the coupling agent, it is preferably performed at a temperature of 50 ° C. or higher. After adding or spraying the coupling agent, baking is preferably performed at 100 ° C. or higher. Due to the effect of baking, the coupling agent can be cured to cause a solid chemical reaction with the metal oxide particles. Baking can be carried out in an arbitrary range as long as the temperature and the time at which desired electrophotographic characteristics are obtained.

  When using the wet method, the surface adsorbed water of the metal oxide particles is first removed as in the dry method. As a method for removing the surface adsorbed water, in addition to the heat drying similar to the dry method, a method of removing with stirring and heating in a solvent used for the surface treatment, a method of removing by azeotropy with the solvent, and the like can be performed. Next, the metal oxide particles are dispersed in a solvent using stirring, ultrasonic waves, a sand mill, an attritor, a ball mill, etc., added with a coupling agent solution, stirred or dispersed, and then uniformly removed by removing the solvent. Is done. After removing the solvent, baking can be performed at 100 ° C. or higher. Baking can be carried out in an arbitrary range as long as the temperature and time allow the desired electrophotographic characteristics to be obtained.

It is essential that the amount of the surface treatment agent with respect to the metal oxide particles is an amount capable of obtaining desired electrophotographic characteristics. The electrophotographic characteristics are affected by the amount of the surface treatment agent attached to the metal oxide particles after the surface treatment. In the case of a silane coupling agent, the amount of adhesion is determined from the Si intensity (derived from the silane coupling agent) measured by fluorescent X-ray analysis and the main metal element strength of the metal oxide used. The Si intensity measured by this fluorescent X-ray analysis is preferably in the range of 1.0 × 10 ⁻⁵ times or more and 1.0 × 10 ⁻³ times or less of the main metal element strength of the metal oxide used. If it falls below this range, image quality defects such as fog are likely to occur, and if it exceeds this range, density reduction due to an increase in residual potential may easily occur.

Examples of the binder resin contained in the dispersion type undercoat layer coating agent include acetal resins such as polyvinyl butyral, polyvinyl alcohol resin, casein, polyamide resin, cellulose resin, gelatin, polyurethane resin, polyester resin, methacrylic resin, acrylic resin, Known polymer resin compounds such as polyvinyl chloride resin, polyvinyl acetate resin, vinyl chloride-vinyl acetate-maleic anhydride resin, silicone resin, silicone-alkyd resin, phenol resin, phenol-formaldehyde resin, melamine resin, urethane resin, In addition, a charge transporting resin having a charge transporting group, a conductive resin such as polyaniline, and the like can be given.
Of these, resins insoluble in the coating solvent for the layer formed on the undercoat layer are preferably used, and phenol resins, phenol-formaldehyde resins, melamine resins, urethane resins, epoxy resins, and the like are particularly preferably used. The ratio between the metal oxide particles and the binder resin in the dispersion type undercoat layer forming coating solution can be arbitrarily set within a range in which desired photoreceptor characteristics can be obtained.

Examples of the method for dispersing the metal oxide particles surface-treated by the above-described method in the binder resin include a media disperser such as a ball mill, a vibration ball mill, an attritor, a sand mill, a horizontal sand mill, an agitator, an ultrasonic disperser, and a roll mill. And a method using a medialess disperser such as a high-pressure homogenizer. Further, examples of the high-pressure homogenizer include a collision method in which the dispersion liquid is dispersed by liquid-liquid collision or liquid-wall collision in a high pressure state, and a penetration method in which the fine liquid is penetrated and dispersed in a high pressure state.
The method of forming the undercoat layer with this dispersion-type undercoat layer coating agent can be performed in the same manner as the method of forming the undercoat layer using the above-described undercoat layer coating agent.

-Photosensitive layer: Charge transport layer-
Next, the photosensitive layer will be described below in this order, divided into a charge transport layer and a charge generation layer.
Examples of the charge transport material used for the charge transport layer include those shown below. That is, oxadiazole derivatives such as 2,5-bis (p-diethylaminophenyl) -1,3,4-oxadiazole, 1,3,5-triphenyl-pyrazoline, 1- [pyridyl- (2)]- Pyrazoline derivatives such as 3- (p-diethylaminostyryl) -5- (p-diethylaminostyryl) pyrazoline, triphenylamine, tri (P-methyl) phenylamine, N, N-bis (3,4-dimethylphenyl) biphenyl Aromatic tertiary amino compounds such as -4-amine, dibenzylaniline, 9,9-dimethyl-N, N-di (p-tolyl) fluorenon-2-amine, N, N′-diphenyl-N, N Aromatic tertiary diamino compounds such as' -bis (3-methylphenyl)-[1,1-biphenyl] -4,4'-diamine, 3- (4'dimethylaminophenyl) 1,5,6-di- (4'-methoxyphenyl) -1,2,4-triazine, 1,2,4-triazine derivatives, 4-diethylaminobenzaldehyde-1,1-diphenylhydrazone, 4-diphenyl Aminobenzaldehyde-1,1-diphenylhydrazone, [p- (diethylamino) phenyl] (1-naphthyl) phenylhydrazone, 1-pyrenediphenylhydrazone, 9-ethyl-3-[(2methyl-1-indolinylimino) methyl Carbazole, 4- (2-methyl-1-indolinyliminomethyl) triphenylamine, 9-methyl-3-carbazole diphenylhydrazone, 1,1-di- (4,4′-methoxyphenyl) acrylaldehyde diphenylhydrazone , Β, β-bis (methoxyphenyl) vinyldiphenyl Hydrazone derivatives such as razone, quinazoline derivatives such as 2-phenyl-4-styryl-quinazoline, benzofuran derivatives such as 6-hydroxy-2,3-di (p-methoxyphenyl) -benzofuran, p- (2,2-diphenyl) Hole transport materials such as α-stilbene derivatives such as vinyl) -N, N-diphenylaniline, enamine derivatives, carbazole derivatives such as N-ethylcarbazole, poly-N-vinylcarbazole and derivatives thereof are used. Or the polymer etc. which have the group comprised from the said compound in a principal chain or a side chain are mentioned. These charge transport materials can be used alone or in combination of two or more.

  Any binder resin can be used for the charge transport layer, but the binder resin is preferably compatible with the charge transport material and has an appropriate strength.

  Examples of this binder resin include various polycarbonate resins composed of bisphenol A, bisphenol Z, bisphenol C, bisphenol TP, copolymers thereof, polyarylate resins and copolymers thereof, polyester resins, methacrylic resins, acrylic resins Resin, polyvinyl chloride resin, polyvinylidene chloride resin, polystyrene resin, polyvinyl acetate resin, styrene-butadiene copolymer resin, vinyl chloride-vinyl acetate copolymer resin, vinyl chloride-vinyl acetate-maleic anhydride copolymer resin , Silicone resin, silicone alkyd resin, phenol-formaldehyde resin, styrene-acrylic copolymer resin, ethylene-alkyd resin, poly-N-vinylcarbazole resin, polyvinyl butyral resin, polyphenylene ether resin And the like. These resins can be used alone or as a mixture of two or more.

  The molecular weight of the binder resin used for the charge transport layer is selected depending on the film thickness of the photosensitive layer and the film forming conditions such as the solvent, but it is usually preferably within the range of 3000 to 300,000 in terms of viscosity average molecular weight. It is more preferably within the range of 200,000 or less.

  The charge transport layer can be formed by applying and drying a solution in which the charge transport material and the binder resin are dissolved in an appropriate solvent. Examples of the solvent used for forming the coating solution for forming the charge transport layer include aromatic hydrocarbons such as benzene, toluene and chlorobenzene, ketones such as acetone and 2-butanone, methylene chloride, chloroform and ethylene chloride. Halogenated aliphatic hydrocarbons, cyclic or linear ethers such as tetrahydrofuran, dioxane, ethylene glycol and diethyl ether, or a mixed solvent thereof can be used. The blending ratio between the charge transport material and the binder resin is preferably in the range of 10: 1 to 1: 5. The thickness of the charge transport layer is generally preferably in the range of 5 μm to 50 μm, and more preferably in the range of 10 μm to 40 μm.

The charge transport layer and / or the charge generation layer, which will be described later, are used for the purpose of preventing deterioration of the photoreceptor due to ozone, oxidizing gas, light, or heat generated in the image forming apparatus. Additives such as stabilizers may be included.
Examples of the antioxidant include hindered phenols, hindered amines, paraphenylenediamines, arylalkanes, hydroquinones, spirochromans, spiroidanones or their derivatives, organic sulfur compounds, and organic phosphorus compounds.

  As specific examples of antioxidants, phenolic antioxidants include 2,6-di-t-butyl-4-methylphenol, styrenated phenol, n-octadecyl-3- (3 ′, 5′- Di-t-butyl-4'-hydroxyphenyl) -propionate, 2,2'-methylene-bis- (4-methyl-6-t-butylphenol), 2-t-butyl-6- (3'-t- Butyl-5'-methyl-2'-hydroxybenzyl) -4-methylphenyl acrylate, 4,4'-butylidene-bis- (3-methyl-6-tert-butyl-phenol), 4,4'-thio- Bis- (3-methyl-6-tert-butylphenol), 1,3,5-tris (4-tert-butyl-3-hydroxy-2,6-dimethylbenzyl) isocyanurate, tetrakis- [methylene- -(3 ', 5'-di-t-butyl-4'-hydroxy-phenyl) propionate] -methane, 3,9-bis [2- [3- (3-t-butyl-4-hydroxy-5- Methylphenyl) propionyloxy] -1,1-dimethylethyl] -2,4,8,10-tetraoxaspiro [5,5] undecane, 3-3 ′, 5′-di-t-butyl-4′- And hydroxyphenyl) stearyl propionate.

  Among hindered amine compounds, bis (2,2,6,6-tetramethyl-4-piperidyl) sebacate, bis (1,2,2,6,6-pentamethyl-4-piperidyl) sebacate, 1- [2- [ 3- (3,5-di-tert-butyl-4-hydroxyphenyl) propionyloxy] ethyl] -4- [3- (3,5-di-tert-butyl-4-hydroxyphenyl) propionyloxy] -2 , 2,6,6-tetramethylpiperidine, 8-benzyl-7,7,9,9-tetramethyl-3-octyl-1,3,8-triazaspiro [4,5] undecane-2,4-dione, 4-benzoyloxy-2,2,6,6-tetramethylpiperidine, dimethyl-1- (2-hydroxyethyl) -4-hydroxy-2,2,6,6-tetramethylpiperidine succinate Condensate, poly [{6- (1,1,3,3-tetramethylbutyl) amino-1,3,5-triazine-2,4-diyl} {(2,2,6,6-tetramethyl- 4-piperidyl) imino} hexamethylene {(2,2,6,6-tetramethyl-4-piperidyl) imino}], 2- (3,5-di-t-butyl-4-hydroxybenzyl) -2- n-Butylmalonate bis (1,2,2,6,6-pentamethyl-4-piperidyl), N, N′-bis (3-aminopropyl) ethylenediamine-2,4-bis [N-butyl-N— (1,2,2,6,6, -pentamethyl-4piperidyl) amino] -6-chloro-1,3,5-triazine condensate and the like.

Among organic sulfur antioxidants, dilauryl-3,3′-thiodipropionate, dimyristyl-3,3′-thiodipropionate, distearyl-3,3′-thiodipropionate, pentaerythritol-tetrakis- (Β-lauryl-thiopropionate), ditridecyl-3,3′-thiodipropionate, 2-mercaptobenzimidazole and the like.
Examples of the organophosphorus antioxidant include trisnonylphenyl phosfte, triphenyl phosfeft, tris (2,4-di-t-butylphenyl) -phosfte, and the like.

  Organic sulfur and organophosphorus antioxidants are called secondary antioxidants, and when used in combination with primary antioxidants such as phenols or amines, the antioxidant effect is increased synergistically. Can do.

Examples of the light stabilizer include benzophenone, benzotriazole, dithiocarbamate, and tetramethylpiperidine derivatives.
Examples of the benzophenone light stabilizer include 2-hydroxy-4-methoxybenzophenone, 2-hydroxy-4-octoxybenzophenone, and 2,2′-di-hydroxy-4-methoxybenzophenone.
As the benzotriazole light stabilizer, 2-(-2′-hydroxy-5′methylphenyl-)-benzotriazole, 2- [2′-hydroxy-3 ′-(3 ″, 4 ″, 5 ″) , 6 ″ -tetra-hydrophthalimido-methyl) -5′-methylphenyl] -benzotriazole, 2-(-2′-hydroxy-3′-t-butyl 5′-methylphenyl-)-5-chlorobenzo Triazole, 2- (2′-hydroxy-3′-t-butyl-5′-methylphenyl-)-5-chlorobenzotriazole, 2- (2′-hydroxy-3 ′, 5′-t-butylphenyl- ) -Benzotriazole, 2- (2′-hydroxy-5′-t-octylphenyl) -benzotriazole, 2- (2′-hydroxy-3 ′, 5′-di-t-amylphenyl-)-benzotriazole Etc.
Other light stabilizers include 2,4, di-t-butylphenyl-3 ′, 5′-di-t-butyl-4′-hydroxybenzoate, nickel dibutyl-dithiocarbamate, and the like.

The charge transport layer can be formed by applying a solution obtained by dissolving the charge transport material and the binder resin described above in an appropriate solvent and drying the solution. Examples of the solvent used for preparing the coating solution for forming the charge transport layer include aromatic hydrocarbons such as benzene, toluene and chlorobenzene, ketones such as acetone and 2-butanone, and halogens such as methylene chloride, chloroform and ethylene chloride. Cyclic aliphatic hydrocarbons, cyclic or linear ethers such as tetrahydrofuran, dioxane, ethylene glycol and diethyl ether, or a mixed solvent thereof can be used.
Silicone oil can also be added to the charge transport layer forming coating solution as a leveling agent for improving the smoothness of the coating film formed by coating. The addition amount is preferably 1 ppm or more and 10,000 ppm or less, and more preferably 5 ppm or more and 2,000 ppm or less with respect to the solid content of the charge transport layer.

  The mixing ratio of the charge transport material and the binder resin is preferably 10: 1 to 1: 5 by mass ratio. In general, the thickness of the charge transport layer is preferably in the range of 5 μm to 50 μm, and more preferably in the range of 10 μm to 30 μm.

  The coating solution for forming the charge transport layer can be applied by dip coating, ring coating, spray coating, bead coating, blade coating, roller coating, knife coating, curtain coating, depending on the shape and application of the photoreceptor. It can be performed using a coating method such as a coating method. Drying is preferably performed by heating after drying at room temperature (10 ° C. or higher and 30 ° C. or lower). The heat drying is desirably performed in a temperature range higher than 30 ° C. and lower than or equal to 200 ° C. for a time in the range of 5 minutes to 2 hours.

-Photosensitive layer: Charge generation layer-
The charge generation layer is formed by depositing a charge generation material by a vacuum deposition method or by applying a solution containing an organic solvent and a binder resin.

Examples of charge generation materials include amorphous selenium, crystalline selenium, selenium-tellurium alloy, selenium-arsenic alloy, and other selenium compounds; inorganic photoconductors such as selenium alloy, zinc oxide, and titanium oxide; Sensitized, various phthalocyanine compounds such as metal-free phthalocyanine, titanyl phthalocyanine, copper phthalocyanine, tin phthalocyanine, gallium phthalocyanine; Various organic pigments such as salts; or dyes are used.
In addition, these organic pigments generally have several types of crystals. In particular, phthalocyanine compounds have various crystal types including α type and β type. Any of these crystal forms can be used as long as it is a pigment capable of obtaining characteristics.

  Of the charge generation materials described above, phthalocyanine compounds are preferred. In this case, when the photosensitive layer is irradiated with light, the phthalocyanine compound contained in the photosensitive layer absorbs photons and generates carriers. At this time, since the phthalocyanine compound has a high quantum efficiency, the absorbed photons can be efficiently absorbed to generate carriers.

Furthermore, among the phthalocyanine compounds, phthalocyanines shown in the following (1) to (3) are more preferable. That is,
(1) At least 7.6 °, 10.0 °, 25.2 °, 28.0 ° in the Bragg angle (2θ ± 0.2 °) of the X-ray diffraction spectrum using Cukα rays as the charge generation material Crystalline hydroxygallium phthalocyanine having a diffraction peak at the position.
(2) At the position of at least 7.3 °, 160 °, 25.4 °, 28.1 ° in the Bragg angle (2θ ± 0.2 °) of the X-ray diffraction spectrum using Cukα rays as the charge generation material. A crystalline form of chlorogallium phthalocyanine having a diffraction peak,
(3) Diffraction peaks at positions of at least 9.5 °, 24.2 °, and 27.3 ° in the Bragg angle (2θ ± 0.2 °) of the X-ray diffraction spectrum using Cukα rays as the charge generation material. A crystalline form of titanyl phthalocyanine.

  Since these phthalocyanine compounds have not only high photosensitivity but also high stability of photosensitivity, a photoreceptor having a photosensitive layer containing these phthalocyanine compounds is required to have high-speed image formation and reproducibility. It is suitable as a photoreceptor for a color (multicolor) image forming apparatus.

  Note that the peak intensity and position may slightly deviate from these values depending on the crystal shape and measurement method. However, if the X-ray diffraction patterns are basically the same, the same crystal type is assumed. I can judge.

  Examples of the binder resin used for the charge generation layer include the following. That is, polycarbonate resin such as bisphenol A type or bisphenol Z type and copolymers thereof, polyarylate resin, polyester resin, methacrylic resin, acrylic resin, polyvinyl chloride resin, polystyrene resin, polyvinyl acetate resin, styrene-butadiene copolymer resin Vinylidene chloride-acrylonitrile copolymer resin, vinyl chloride-vinyl acetate-maleic anhydride resin, silicone resin, silicon-alkyd resin, phenol-formaldehyde resin, styrene-alkyd resin, poly-N-vinylcarbazole and the like.

  These binder resins can be used alone or in admixture of two or more. The mixing ratio of the charge generation material and the binder resin (charge generation material: binder resin) is preferably in the range of 10: 1 to 1:10 by mass ratio. The thickness of the charge generation layer is generally preferably in the range of 0.01 μm to 5 μm, and more preferably in the range of 0.05 μm to 2.0 μm.

The charge generation layer may contain at least one electron accepting substance for the purpose of improving sensitivity, reducing residual potential, reducing fatigue during repeated use, and the like. Examples of the electron accepting material used in the charge generation layer include succinic anhydride, maleic anhydride, dibromomaleic anhydride, phthalic anhydride, tetrabromophthalic anhydride, tetracyanoethylene, tetracyanoquinodimethane, and o-dinitrobenzene. M-dinitrobenzene, chloranil, dinitroanthraquinone, trinitrofluorenone, peak phosphoric acid, o-nitrobenzoic acid, p-nitrobenzoic acid, phthalic acid and the like. Of these, fluorenone-based, quinone-based, and benzene derivatives having electron-withdrawing substituents such as Cl, CN, NO ₂ are particularly preferable.

As a method for dispersing the charge generating material in the resin, methods such as a roll mill, a ball mill, a vibrating ball mill, an attritor, a dyno mill, a sand mill, and a colloid mill can be used.
Known organic solvents as coating solution solvents for forming the charge generation layer, for example, aromatic hydrocarbon solvents such as toluene and chlorobenzene, fats such as methanol, ethanol, n-propanol, iso-propanol, and n-butanol Aromatic alcohol solvents, ketone solvents such as acetone, cyclohexanone and 2-butanone, halogenated aliphatic hydrocarbon solvents such as methylene chloride, chloroform and ethylene chloride, cyclic or straight chain such as tetrahydrofuran, dioxane, ethylene glycol and diethyl ether And ether solvents such as methyl ether solvent, methyl acetate, ethyl acetate and n-butyl acetate.

  These solvents can be used alone or in combination of two or more. When two or more kinds of solvents are mixed and used, any solvent that can dissolve the binder resin as the mixed solvent can be used. However, when the photosensitive layer has a layer structure in which the charge transport layer and the charge generation layer are formed in this order from the substrate side, the charge generation layer is formed using a coating method that easily dissolves the lower layer, such as dip coating. When forming, it is desirable to use a solvent that does not dissolve the lower layer such as the charge transport layer. In addition, when the charge generation layer is formed using a spray coating method or a ring coating method in which the erosion property of the lower layer is relatively less than that of the dip coating, the selection range of the solvent can be expanded.

-Intermediate layer-
As the intermediate layer, for example, when charging the surface of the photoconductor with a charger, the charged electric charge is prevented from being injected from the surface of the photoconductor to the base of the photoconductor as the counter electrode, so that a charging potential cannot be obtained. If necessary, a charge injection blocking layer can be formed between the surface protective layer and the charge generation layer.
As the material for the charge injection blocking layer, general-purpose resins such as the silane coupling agents, titanium coupling agents, organic zirconium compounds, organic titanium compounds, other organic metal compounds, polyesters, and polyvinyl butyral listed above can be used. The film thickness of the charge injection blocking layer is set in the range of about 0.001 μm or more and 5 μm or less in consideration of film forming properties and carrier blocking properties.

(Process cartridge and image forming apparatus)
As shown in FIG. 6, the image forming apparatus 30 of the present embodiment is configured to include the photosensitive member 32 as the photosensitive member described above.
The photoreceptor 32 is provided so as to be rotatable in a predetermined direction (the arrow A direction in FIG. 6). A charging device 34, an exposure device 36, a developing device 38, a transfer device 40, and a removing device 42 are provided around the photoconductor 32 in order along the rotation direction of the photoconductor 32. The image forming apparatus 30 includes a fixing device 44 for fixing a toner image (described later) on the recording medium 48 to the recording medium 48.

The charging device 34 charges the outer peripheral surface of the photoconductor 32. The exposure device 36 exposes the outer peripheral surface of the photoconductor 32 charged by the charging device 34 with light modulated according to the image data, so that an electrostatic latent image corresponding to the image of the image data is formed on the photoconductor 32. Form. The developing device 38 develops the electrostatic latent image with toner by supplying a developer containing toner to the electrostatic latent image formed on the photoconductor 32 to form a toner image. The transfer device 40 transfers the toner image on the photoreceptor 32 onto the recording medium 48 by conveying the recording medium 48 with the photoreceptor 32 interposed therebetween. The recording medium 48 is stored in advance in a paper storage unit (not shown), and is conveyed from the paper storage unit by a roller or the like to reach between the photoconductor 32 and the transfer device 40, so that the photoconductor The toner image on 32 is transferred.
The recording medium 48 to which the toner image has been transferred is conveyed to a place where the fixing device 44 is installed by a roller (not shown) or the like, and the unfixed toner image is fixed on the recording medium 48 by the fixing device 44. The recording medium 48 on which the toner image is fixed by the fixing device 44 is discharged to the outside of the image forming device 30 by a roller or the like (not shown).
Deposits such as unfixed toner and paper dust on the photoreceptor 32 are removed from the photoreceptor 32 by the removing device 42.

  The photosensitive member 32 included in the image forming apparatus 30 and the charging device 34, the exposure device 36, the developing device 38, the transfer device 40, and the removing device 42 are selected in order along the rotation direction of the photosensitive member 32. At least one of the devices is detachably attached to the main body of the image forming apparatus 30. Each of the detachable devices is collectively referred to as a process cartridge 46.

  The image forming apparatus 30 corresponds to the image forming apparatus of the present invention. The charging device 34 corresponds to the charging means of the process cartridge and the image forming apparatus of the present invention, the photoconductor 32 corresponds to the photoconductor, the exposure device 36 corresponds to the exposure device, and the developing device 38 serves as the developing device. The transfer device 40 corresponds to a transfer unit, and the removal device 42 corresponds to a removal unit.

The charging device 34 may be a non-contact corona discharge type corotron, scorotron or the like.
The image forming apparatus 30 may be a so-called tandem machine having a plurality of photoconductors corresponding to the toners of the respective colors. In this case, it is preferable that all the photoconductors are the photoconductors of the present embodiment. Further, the transfer of the toner image is not limited to the method of directly transferring from the photoreceptor to the recording medium, but is an intermediate transfer system in which the toner image is transferred from the photoreceptor to the intermediate transfer member and then transferred from the intermediate transfer member to the recording medium. May be.

(Semiconductor film manufacturing method)
Next, the manufacturing method of the semiconductor film of this Embodiment is demonstrated. For the semiconductor film of this embodiment, a known vapor deposition method such as a plasma CVD (Chemical Vapor Deposition) method, a metal organic vapor phase epitaxy method, a molecular beam epitaxy method, vapor deposition, or sputtering can be used. It is preferable to use a growth method.
In this case, the activation means that activates the carbon-containing substance and the oxygen-containing substance to an energy state or an excited state necessary for the reaction makes the nitrogen-containing substance and the oxygen-containing substance active species, and the activity It is preferable to form the semiconductor film of this embodiment on the base material by reacting the seed with an organometallic compound containing a group 13 element that is not activated.
As a result, when the substrate contains an organic material, for example, when a polymer film substrate is used as the substrate of the light receiving element, or when the photoconductor is an organic photoconductor, the substrate or the photosensitive layer is thermally damaged. The semiconductor film having the above-described characteristics can be formed as the photoconductive layer of the light receiving element or the surface layer of the photoreceptor. Note that when forming the semiconductor film, the surface of the base material may be previously cleaned by plasma.

The above-described semiconductor film is usually formed by placing a base material on a gas containing carbon, a substance containing oxygen, an organometallic compound containing a group 13 element, or a gas obtained by vaporizing these. In the reaction chamber (film formation chamber), the gas containing each component is supplied to the reaction chamber while the gas after the reaction is exhausted from the reaction chamber. From this point of view, it is preferable to introduce an organometallic compound containing a group 13 element downstream of the activating means for activating the substance containing carbon and the substance containing oxygen.
As a result, the substance containing nitrogen and the substance containing oxygen activated on the upstream side of the position where the organometallic compound containing the group 13 element is introduced merge on the downstream side of the activation means. An organometallic compound containing a group 13 element that is not activated can be reacted with a substance containing activated carbon and a substance containing oxygen.

  Although depending on the use of the semiconductor film of the present embodiment, when the base material contains an organic material, for example, when a PET film with an ITO electrode is used as the substrate of the light receiving element, or the photosensitive layer of the photoreceptor is organic. When an organic material such as a charge generating material or a binder resin is included, the maximum temperature of the substrate surface when the semiconductor film is formed on the substrate is preferably 100 ° C. or less, and 50 ° C. or less. It is preferable that the maximum temperature of the substrate surface is closer to normal temperature (10 ° C. or higher and 30 ° C.). When the temperature exceeds 100 ° C., the base material may be deformed or the physical properties may be deteriorated due to decomposition of an organic material contained in the base material.

Hereinafter, the method for manufacturing the semiconductor film of the present embodiment described above will be described in more detail by taking as an example the case of forming the surface layer of the photoreceptor. In the following description, if a substrate is used instead of the photoconductor on which the photosensitive layer portion is formed as a substrate, a light receiving element can be produced by the same method.
FIG. 4 is a schematic diagram showing an example of a film forming apparatus used for forming the surface layer of the photoconductor of the present embodiment (see the photoconductor 32 in FIG. 6). FIG. FIG. 4B is a schematic cross-sectional view taken along a line A1-A2 of the film formation apparatus illustrated in FIG. 4A. In FIG. 4, 10 is a film forming chamber, 11 is an exhaust port, 12 is a substrate rotating unit, 13 is a substrate holder, 14 is a substrate, 15 is a gas introduction tube, 16 is a shower nozzle, 17 is a plasma diffusion unit, and 18 is a high frequency. A power supply unit, 19 is a plate electrode, 20 is a gas introduction tube, and 21 is a high-frequency discharge tube unit.

In the film forming apparatus shown in FIG. 4, an exhaust port 11 connected to a vacuum exhaust device (not shown) is provided at one end of the film forming chamber 10, and the side on which the exhaust port 11 of the film forming chamber 10 is provided. On the opposite side, a plasma generator comprising a high-frequency power supply unit 18, a plate electrode 19 and a high-frequency discharge tube unit 21 is provided.
This plasma generator is disposed in a high-frequency discharge tube portion 21, a high-frequency discharge tube portion 21, a flat plate electrode 19 provided with a discharge surface on the exhaust port 11 side, and disposed outside the high-frequency discharge tube portion 21. The high-frequency power supply unit 18 is connected to the surface of the electrode 19 opposite to the discharge surface. The high-frequency discharge tube portion 21 is connected to a gas introduction tube 20 for supplying gas into the high-frequency discharge tube portion 21, and the other end of the gas introduction tube 20 is a first not shown. Connected to the gas supply.

  Note that the plasma generator shown in FIG. 5 may be used instead of the plasma generator provided in the deposition apparatus shown in FIG. FIG. 5 is a schematic diagram showing another example of the plasma generating apparatus that can be used in the film forming apparatus shown in FIG. 4, and is a side view of the plasma generating apparatus. In FIG. 5, 22 is a high-frequency coil, 23 is a quartz tube, and 20 is a gas introduction tube for introducing gas into the quartz tube 23 as shown in FIG. This plasma generator comprises a quartz tube 23 and a high-frequency coil 22 provided along the outer peripheral surface of the quartz tube 23. One end of the quartz tube 23 is formed with a film forming chamber 10 (not shown in FIG. 5). It is connected. Further, a gas introduction pipe 20 is connected to the other end of the quartz pipe 23.

A bar-shaped shower nozzle 16 substantially parallel to the discharge surface is connected to the discharge surface side of the flat plate electrode 19, and one end of the shower nozzle 16 is connected to a gas introduction tube 15. A second gas supply source (not shown) provided outside the film forming chamber 10 is connected.
Here, the shower nozzle has a nozzle for discharging a plurality of gases, and the structure thereof is not particularly limited as long as the flow rate of the gas from each nozzle is uniform. For example, a structure having a gas nozzle having a plurality of holes may be used. In order to eject gas from a plurality of holes at the same flow rate, a combination of a plurality of bifurcated branches may be used. It may be changed and installed. A plurality of gas pipes each provided with a variable valve opening degree may be used. The shape of the nozzle may be cylindrical or a trumpet type.

In addition, a substrate rotating unit 12 is provided in the film forming chamber 10, and the cylindrical substrate 14 is parallel to the longitudinal direction of the shower nozzle and the axial direction of the substrate 14 (here, parallel is strictly It is not necessary to be parallel to the substrate rotating part 12 via the substrate holder 13 so as to face each other. During film formation, the substrate 14 can be rotated in the circumferential direction by rotating the substrate rotating unit 12. As the substrate 14, a photoconductor previously laminated up to the photosensitive layer or a photoconductor laminated up to the intermediate layer on the photosensitive layer is used.
When the light receiving element is manufactured by the apparatus shown in FIG. 4, a substrate holder for fixing a flat substrate such as a substrate may be attached instead of the substrate holder 13 for fixing the cylindrical substrate 14. Alternatively, the semiconductor film can be formed while the substrate is attached to the outer peripheral surface of the substrate 14 attached to the substrate holder 13 and the substrate holder 13 is rotated.

The formation of the surface layer can be performed, for example, as follows. First, carbon gas, He gas, and oxygen gas are introduced into the high-frequency discharge tube portion 21 from the gas introduction tube 20 and a radio wave of, for example, 13.56 MHz is supplied from the high-frequency power supply portion 18 to the plate electrode 19. . At this time, the plasma diffusion portion 17 is formed so as to spread radially from the discharge surface side of the flat plate electrode 19 to the exhaust port 11 side. Here, the four types of gases introduced from the gas introduction pipe 20 flow through the film forming chamber 10 from the plate electrode 19 side to the exhaust port 11 side.
The plate electrode 19 may be one in which the electrode is surrounded by a ground shield.
Here, as a raw material for carbon gas, hydrocarbons such as methane, ethane, ethylene, propane, and butane, alcohols such as methanol, ethanol, propanol, and isopropanol, and acetone in a gaseous state can be used. .

  Next, trimethylgallium gas diluted with hydrogen as a carrier gas is introduced into the film forming chamber 10 through the gas inlet tube 15 and the shower nozzle 16 located downstream of the flat plate electrode 19 serving as the activating means. A non-single crystal film containing gallium, carbon, and oxygen can be formed on the surface of the substrate 14.

  The formation temperature of the surface layer at the time of film formation is not particularly limited, but when producing an amorphous silicon photoreceptor, the temperature of the surface of the cylindrical substrate 14 is preferably formed within a range of 50 ° C. to 350 ° C., In the case of producing an organic photoreceptor, it is preferable that the temperature of the surface of the cylindrical substrate 14 is in the range of 20 ° C to 100 ° C.

In the production of the organic photoreceptor, the temperature of the surface of the substrate 14 during the formation of the surface layer is preferably 100 ° C. or less, more preferably 80 ° C. or less, and particularly preferably 50 ° C. or less. Even if the temperature of the surface of the substrate 14 is 100 ° C. or less at the beginning of film formation, the photosensitive layer may be damaged by heat if it is higher than 150 ° C. due to the influence of plasma. It is preferable to control the surface temperature of the substrate 14.
The temperature of the surface of the substrate 14 may be controlled by heating and / or cooling means (not shown in the figure), or may be left to a natural temperature increase during discharge. When heating the substrate 14, a heater may be installed outside or inside the substrate 14. When the substrate 14 is cooled, a cooling gas or liquid may be circulated inside the substrate 14.
In order to avoid an increase in the temperature of the surface of the substrate 14 due to discharge, it is effective to adjust the high energy gas flow that strikes the surface of the substrate 14. In this case, conditions such as the gas flow rate, discharge output, and pressure are adjusted so as to achieve the required temperature.

Here, as the gas containing a group 13 element, trimethylgallium, triethylgallium, t-butylgallium, trimethylindium, triethylindium, t-butylindium, trimethylaluminum, triethylaluminum as an organometallic compound containing gallium, indium, and aluminum. An organometallic compound such as t-butylaluminum or a hydride such as diborane can be used.
These liquids and solids can be vaporized and used alone or in a mixed state by bubbling with a carrier gas.

Two or more of these may be mixed.
For example, in the initial stage of forming the surface layer, trimethylindium is introduced into the film formation chamber 10 through the gas introduction tube 15 and the shower nozzle 16, thereby forming a film containing nitrogen and indium on the substrate 14. In this case, this film can be absorbed when the film is continuously formed, and the ultraviolet rays that deteriorate the photosensitive layer can be absorbed. For this reason, damage to the photosensitive layer due to generation of ultraviolet rays during film formation can be suppressed.

In addition, a dopant can be added to the surface layer in order to control its conductivity type. As a dopant doping method at the time of film formation, SiH ₃ and SnH ₄ are used for n-type, and biscyclopentadienyl magnesium, dimethyl calcium, dimethyl strontium, dimethyl zinc, diethyl zinc, etc. are used for p-type. Can be used in the gas state. In order to dope the dopant element into the surface layer, a known method such as a thermal diffusion method or an ion implantation method may be employed.
Specifically, a conductive surface layer such as n-type or p-type is formed by introducing a gas containing at least one dopant element into the film formation chamber 10 through the gas introduction tube 15 and the shower nozzle 16. Can be obtained.

Note that when an organometallic compound containing a hydrogen atom is used as a supply material for a group 13 atom and a surface layer mainly containing a group 13 atom and oxygen is formed, active hydrogen may exist in the film formation chamber 10. preferable. The active hydrogen may be supplied from hydrogen atoms used as a carrier gas or hydrogen atoms contained in an organometallic compound.
For example, in the film forming apparatus shown in FIG. 4, when hydrogen gas and carbon gas are introduced into the film forming apparatus from different positions, the hydrogen gas activation state and the carbon gas activation state are respectively set. A plurality of plasma generators may be provided so that they can be controlled independently. On the other hand, in terms of simplification of the apparatus, a gas containing carbon atoms such as CH ₃ and hydrogen atoms at the same time or a mixture of carbon gas and hydrogen gas is used as a supply material for hydrogen and carbon. This is preferably activated by plasma.
Further, if a rare gas such as helium or hydrogen is used in combination as a carrier gas, the etching effect of the film grown on the surface of the substrate 14 by a rare gas such as helium and hydrogen is 200 ° C. or higher even at a low temperature of 100 ° C. or lower. As a result, it is possible to form an amorphous group 13 element with less hydrogen (20 atomic% or less), carbon and oxygen, which is equivalent to that during high temperature growth.

By the above-described method, activated hydrogen, carbon, oxygen, noble gas, and group 13 atoms are present on the surface of the substrate 14 or around the surface, and the activated noble gas or hydrogen further converts the organometallic compound. It has the effect of desorbing hydrogen of hydrocarbon groups such as methyl groups and ethyl groups as molecules. Therefore, on the surface of the base 14, a surface layer composed of a hard film having a small hydrogen content and comprising a three-dimensional bond of carbon, oxygen and a group 13 element is formed at a low temperature (70 ° C. or less). .
Unlike the sp2-bonding carbon atoms contained in silicon carbide, this hard film is transparent because Ga and N form sp3 bonds like carbon atoms constituting diamond. Furthermore, the film is transparent and hard, and the film surface has water repellency and low friction.

The plasma generating means of the film forming apparatus shown in FIG. 4 uses a high-frequency oscillator, but is not limited to this. For example, a microwave oscillator is used, an electrocyclotron resonance method, a helicon plasma, You may use the apparatus of a system. In the case of a high-frequency oscillation device, it may be inductive or capacitive.
Furthermore, two or more of these devices may be used in combination, or two or more of the same types of devices may be used. In order to prevent the temperature of the substrate 14 from rising due to plasma irradiation, a high-frequency oscillation device is preferable, but a device for preventing heat irradiation may be provided.

When two or more types of different plasma generators (plasma generating means) are used, it is necessary to be able to generate discharges simultaneously at the same pressure. In addition, a pressure difference may be provided between the discharge region and the film formation region (the portion where the base is installed). These apparatuses may be arranged in series with respect to the gas flow formed in the film forming apparatus from the part where the gas is introduced to the part where the gas is discharged. You may arrange | position so that it may oppose.
For example, when two types of plasma generating means are installed in series with respect to the gas flow, the film forming apparatus shown in FIG. 4 is taken as an example, and a discharge is caused in the film forming chamber 10 using the shower nozzle 16 as an electrode. 2 can be used as a plasma generator. In this case, a high frequency voltage can be applied to the shower nozzle 16 via the gas introduction tube 15 to cause discharge in the film forming chamber 10 using the shower nozzle 16 as an electrode.

Alternatively, instead of using the shower nozzle 16 as an electrode, a cylindrical electrode is provided between the substrate 14 in the film forming chamber 10 and the plasma generation region, and this film is used to form the film forming chamber 10. It is also possible to cause discharge inside.
In addition, when two different types of plasma generators are used under the same pressure, for example, when using a microwave oscillator and a high-frequency oscillator, the excitation energy of the excited species can be greatly changed, and the film quality can be controlled. It is valid. Moreover, you may perform discharge by atmospheric pressure vicinity (300-1200 hPa range). When discharging near atmospheric pressure, it is desirable to use He as a carrier gas.

  In forming the surface layer, in addition to the above-described methods, a normal metal organic vapor phase epitaxy method or a molecular beam epitaxy method can be used. In the film formation by these methods, activated carbon and / or Alternatively, using active hydrogen or active oxygen is effective for lowering the temperature. In this case, as a raw material for carbon gas, hydrocarbons such as methane, ethane, ethylene, propane, and butane, alcohols such as methanol, ethanol, propanol, and isopropanol, and acetone in a gaseous state can be used. .

  EXAMPLES The present invention will be specifically described below with reference to examples, but the present invention is not limited to these examples.

<< Light receiving element >>
( Reference Example A1)
A PET film in which an ITO film having a film thickness of 0.2 μm was formed on one side of a 50 μm-thick polyethylene terephthalate film (hereinafter sometimes referred to as “PET film”) (manufactured by Toray Industries Inc., Lumirror) was used as a substrate. The semiconductor layer was formed on the substrate using a film forming apparatus having the configuration shown in FIG.
A cylindrical Al tube is placed on the substrate holder 13 in the film forming chamber 10 of the film forming apparatus, and the PET film is fixed to the surface of the Al tube with an adhesive tape so that the surface on which the ITO is formed becomes the outer peripheral surface side. did.

Next, the inside of the film forming chamber 10 was evacuated through the exhaust port 11 until the pressure became about 0.1 Pa. Next, a mixed gas of methane gas, He gas, hydrogen gas, and oxygen gas is supplied from the gas introduction tube 20 into the high-frequency discharge tube portion 21 provided with the plate electrode 19 having a diameter of 50 mm (methane gas 100 sccm, hydrogen gas). 200 sccm, He gas 150 sccm, oxygen gas 0.3 sccm) are introduced, a high frequency power supply unit 18 and a matching circuit (not shown in FIG. 4) set a 13.56 MHz radio wave to an output of 80 W, and matching is performed with a tuner. Discharge was performed from the electrode 19. The reflected wave at this time was 0 W.
Next, a mixed gas containing trimethylgallium gas using hydrogen gas as a carrier gas is supplied from a shower nozzle 16 (nozzle diameter 2 mm, number of nozzles 20, nozzle interval 20 mm, linearly arranged in a line) through a gas introduction pipe 15. The trimethylgallium gas was introduced into the plasma diffusion part 17 in the film forming chamber 10 so that the flow rate thereof was 3 sccm. At this time, the reaction pressure in the film forming chamber 10 measured with a Baratron vacuum gauge (MKS, absolute pressure transducer type 622A) was 40 Pa.

While rotating the Al tube 1 rpm, to form a Ga O film containing hydrogen and carbon having a thickness of 0.15μm on a PET film by depositing 40 minutes. In the film formation, no heating was performed. Further, when the color of the temperature measurement sticker (Wahl, Temp Plate P / N101) attached to the Al tube was confirmed after film formation, it was about 40 ° C.

-Analysis and evaluation of semiconductor layers-
When the infrared ray absorption spectrum of the sample film simultaneously formed on the Si substrate fixed to the Al tube was measured at the time of film formation on the PET film, peaks due to minute Ga—H bonds, bonds, and C—H bonds were observed. confirmed. From these, it was found that the surface layer contained gallium, carbon, and hydrogen. In addition, a peak that seems to be GaO was strongly observed.

Only the halo pattern was seen in the diffraction image obtained by RHEED (reflection high energy electron diffraction) measurement, and it was found that the film was an amorphous film.
About the composition of the constituent atoms of the sample film formed on the Si substrate, hydrogen was measured by Rutherford Back Scattering (RBS), and gallium, oxygen, carbon and nitrogen were measured using Hydrogen Forward Scattering (HFS). It was measured.

  As a result, it was found that gallium, carbon, oxygen, and hydrogen were 31 atom%, 6 atom%, 47 atom%, and 16 atom%, respectively. Moreover, oxygen was distributed throughout the film, and nitrogen was not detected. As a result, it was found that the film (photoconductive layer) formed on the PET film was an amorphous film and a film containing hydrogen.

-Evaluation-
Next, a circular Au electrode having a size of 3 mm is vapor-deposited on the photoconductive layer formed on the PET film on which the ITO film is formed so as to have a thickness of 0.1 μm. Produced. Subsequently, terminal wires were attached to the ITO electrode and the Au electrode using silver paste. Next, the ultraviolet sensitivity of this device was measured.
A spectrally separated 100 W Xe lamp was used as the light source. The wavelength of the Xe lamp is 360 nm. A digital ammeter (manufactured by ADVANTEST, R8240) was directly connected, and light was irradiated from the PET film side of the light receiving element so as to correspond to the region where the Au electrode of the light receiving element was provided. The distance between the light receiving element and the Xe lamp during irradiation was 10 cm.
The dark current (at the time of non-irradiation) at this time was 1 × 10 ⁻¹⁰ A. When an ultraviolet light (the above-described spectral Xe lamp light: wavelength 360 nm, 100 W) was irradiated, an electromotive current of 1 × 10 ⁻⁶ A flowed. On the other hand, when compared using a UV sensor using polycrystalline gallium nitride as a photoconductive layer used in a commercially available UV measuring device (UV Caremate manufactured by Fuji Xerox Co., Ltd.), the output is 1.5 × 10 ^{− 6} A was found to be equivalent. Further, the light receiving element was exposed to visible light in the room, but it did not react particularly. From the above results, it was found that this element functions as an ultraviolet light receiving element.
Further, after the light receiving element was fabricated, it was left in the atmosphere for 6 months, and the same evaluation was performed. However, almost the same result was obtained and no deterioration in performance was observed. Moreover, when an infrared absorption spectrum was measured half a year later, no change was observed.

( Reference Example A2)
Using the same substrate and the same film forming apparatus as in Reference Example A1, a light receiving element in which a semiconductor film doped with magnesium was formed as a photoconductive layer was manufactured as follows.
First, the inside of the film forming chamber 10 was evacuated until the pressure became about 0.1 Pa. Next, a gas obtained by mixing methane gas, He gas, hydrogen gas, and oxygen gas is supplied from the gas introduction tube 20 into the high-frequency discharge tube portion 21 provided with the flat plate electrode 19 having a diameter of 50 mm (methane gas 100 sccm, He gas). 200 sccm, hydrogen 200 sccm, oxygen gas 0.3 sccm), a high frequency power supply unit 18 and a matching circuit (not shown in FIG. 4) set a 13.56 MHz radio wave to an output of 80 W, and matching is performed with a tuner. 19 was discharged. The reflected wave at this time was 0 W.
Next, 3 sccm of a mixed gas containing trimethylgallium gas using hydrogen gas as a carrier gas and 3 sccm of a mixed gas using bispentadienyl magnesium heated to 50 ° C. and hydrogen as a carrier gas were introduced. At this time, the reaction pressure in the film forming chamber 10 measured with a Baratron vacuum gauge (MKS, absolute pressure transducer type 622A) was 40 Pa.

The Al tube was rotated at 2 rpm, and the film was formed for 60 minutes to form a Mg-doped Ga 2 O film having a thickness of 0.15 μm. In the film formation, no heating was performed. Further, when the color of the temperature measurement sticker (Wahl, Temp Plate P / N101) attached to the Al tube was confirmed after film formation, it was about 40 ° C.

-Analysis and evaluation of semiconductor layers-
When the infrared absorption spectrum of the sample film simultaneously formed on the Si substrate fixed to the Al tube was measured when forming the film on the PET film, peaks due to minute Ga—H bonds and C—H bonds were confirmed. It was done. From these, it was found that the surface layer contained gallium, carbon, and hydrogen. In addition, a peak that seems to be GaO was strongly observed.

Only the halo pattern was seen in the diffraction image obtained by RHEED (reflection high energy electron diffraction) measurement, and it was found that the film was an amorphous film.
Regarding the composition of constituent atoms of the sample film formed on the Si substrate, hydrogen was measured by Rutherford back scattering, and gallium, magnesium, carbon, oxygen, and nitrogen were measured by hydrogen forward scattering. As a result, it was found that gallium, carbon, oxygen, and hydrogen were 30 atom%, 5 atom%, 47 atom%, and 14 atom%, respectively, and magnesium was 4 atom%. Further, oxygen was distributed throughout the layer, and nitrogen was not detected.
As a result, the film (photoconductive layer) formed on the PET film was an amorphous film, mainly composed of oxygen, carbon, and gallium, and doped with magnesium. It was found to be a membrane.

-Evaluation-
Next, a light receiving element was produced in the same manner as in Reference Example A1, and the photocurrent was measured in the same manner.
The dark current at this time was 1 × 10 ⁻¹² A. In addition, an electromotive current of 2 × 10 ⁻⁶ A flowed when irradiated with ultraviolet light. In contrast, a UV sensor using polycrystalline gallium nitride as the photoconductive layer used in a commercially available UV measuring device (UV Caremate manufactured by Fuji Xerox Co., Ltd.) using polycrystalline gallium nitride as the photoconductive layer is used for comparison. As a result, the output was found to be equivalent at 1.5 × 10 ⁻⁶ A. Further, the light receiving element was exposed to visible light in the room, but it did not react particularly. From the above results, it was found that this element functions as an ultraviolet light receiving element.
Further, after the light receiving element was fabricated, it was left in the atmosphere for 6 months, and the same evaluation was performed. However, almost the same result was obtained and no deterioration in performance was observed. Moreover, when an infrared absorption spectrum was measured half a year later, no change was observed.

( Reference Example A3)
Using the same substrate and the same film forming apparatus as in Reference Example A1, a light receiving element in which a semiconductor film was formed as a photoconductive layer was produced as follows.
First, the inside of the film forming chamber 10 was evacuated until the pressure became about 0.1 Pa. Next, a gas obtained by mixing methane gas, He gas, hydrogen gas, and oxygen gas is supplied from the gas introduction tube 20 into the high-frequency discharge tube portion 21 provided with the flat plate electrode 19 having a diameter of 50 mm (methane gas 200 sccm, He gas). 200 sccm, hydrogen 100 sccm, oxygen gas 0.02 sccm), a high frequency power supply unit 18 and a matching circuit (not shown in FIG. 1) set a 13.56 MHz radio wave to an output of 80 W, and matching is performed with a tuner. 19 was discharged. The reflected wave at this time was 0 W.

Next, 3 sccm of a mixed gas containing trimethylgallium gas was introduced using hydrogen gas as a carrier gas. At this time, the reaction pressure in the film forming chamber 10 measured with a Baratron vacuum gauge (MKS, absolute pressure transducer type 622A) was 40 Pa.
While rotating the Al tube 1 rpm, to form a Ga O film containing hydrogen and carbon having a thickness of 0.15μm on a PET film by depositing 40 minutes. In the film formation, no heating was performed. Further, when the color of the temperature measurement sticker (Wahl, Temp Plate P / N101) attached to the Al tube was confirmed after film formation, it was about 40 ° C.

-Analysis and evaluation of semiconductor layers-
When the infrared absorption spectrum of the sample film simultaneously formed on the Si substrate fixed to the Al tube was measured when forming the film on the PET film, peaks due to minute Ga—H bonds and C—H bonds were confirmed. It was done. From these, it was found that the surface layer contained gallium, carbon, and hydrogen. In addition, a peak that seems to be GaO was strongly observed.

Only the halo pattern was seen in the diffraction image obtained by RHEED (reflection high energy electron diffraction) measurement, and it was found that the film was an amorphous film.
Regarding the composition of the constituent atoms of the sample film formed on the Si substrate, hydrogen was measured by Rutherford back scattering, and gallium, carbon, oxygen, and nitrogen were measured by hydrogen forward scattering. As a result, it was found that gallium, carbon, oxygen, and hydrogen were 31 atom%, 25 atom%, 17 atom%, and 27 atom%, respectively. Moreover, oxygen was distributed throughout the film, and nitrogen was not detected. As a result, it was found that the film (photoconductive layer) formed on the PET film was an amorphous film and a film containing hydrogen.

-Evaluation-
Next, a circular Au electrode having a size of 3 mm is deposited on the photoconductive layer formed on the PET on which the ITO film is formed so as to have a thickness of 0.1 μm to produce a light receiving element. did. Subsequently, terminal wires were attached to the ITO electrode and the Au electrode using silver paste. Next, the ultraviolet sensitivity of this device was measured in the same manner as in Reference Example A1.
The dark current (at the time of non-irradiation) at this time was 1 × 10 ⁻¹¹ A. When an ultraviolet light (the above-described spectral Xe lamp light: wavelength 360 nm, 100 W) was irradiated, an electromotive current of 0.1 × 10 ⁻⁶ A flowed. Although it was 1/10 of a UV sensor using polycrystalline gallium nitride as a photoconductive layer used in a commercially available UV measuring device (UV Caremate manufactured by Fuji Xerox Co., Ltd.), it was found that it can be used. Further, the light receiving element was exposed to visible light in the room, but it did not react particularly. From the above results, it was found that this element functions as an ultraviolet light receiving element.
Further, after the light receiving element was fabricated, it was allowed to stand in the atmosphere for 6 months, and the same evaluation was performed. Moreover, when an infrared absorption spectrum was measured half a year later, no change was observed.

(Comparative Example A1)
Using the same substrate and the same film forming apparatus as in Reference Example A1, a light receiving element in which a semiconductor film was formed as a photoconductive layer was produced as follows. Film formation was performed under the same conditions as in Reference Example A1, except that oxygen gas was not used.

-Analysis and evaluation of semiconductor layers-
When the infrared absorption spectrum of the sample film simultaneously formed on the Si substrate fixed to the Al tube was measured when forming the film on the PET film, peaks due to strong Ga-H bonds and strong CH bonds were confirmed. It was done. From these, it was found that the surface layer contains a large amount of carbon and hydrogen.

Only the halo pattern was seen in the diffraction image obtained by RHEED (reflection high energy electron diffraction) measurement, and it was found that the film was an amorphous film.
Regarding the composition of constituent atoms of the sample film formed on the Si substrate, hydrogen was measured using Rutherford back scattering, and gallium, carbon, oxygen, and nitrogen were measured using hydrogen forward scattering. As a result, it was found that gallium, carbon, and hydrogen were 37 atom%, 43 atom%, and 20 atom%, respectively. Nitrogen and oxygen were not detected.

-Evaluation-
Next, an element was prepared in the same manner as in Reference Example A1, and the UV sensitivity was measured.
The dark current at this time (when not irradiated) was 1 × 10 ⁻⁹ A. Further, when ultraviolet light (spectral Xe lamp light: wavelength 360 nm, 100 W) was irradiated, an electromotive current of 5 × 10 ⁻⁸ A flowed. It was found that it was 1/100 or less of a UV sensor using polycrystalline gallium nitride as a photoconductive layer used in a commercially available UV measuring device (UV Caremate manufactured by Fuji Xerox Co., Ltd.), and was not usable.
Further, when an infrared absorption spectrum was measured half a year later, the Ga—H bond peak was reduced to ½.

<< Photoconductor >>
(Example B1)
First, an organic photoreceptor was produced by laminating an undercoat layer, a charge generation layer, and a charge transport layer in this order on an Al substrate by the procedure described below.

-Formation of undercoat layer-
20 parts by mass of a zirconium compound (trade name: Organotix ZC540 manufactured by Matsumoto Pharmaceutical Co., Ltd.), 2.5 parts by mass of a silane compound (trade name: A1100 manufactured by Nihon Unicar Co., Ltd.), a polyvinyl butyral resin (trade name: S-REC BM- manufactured by Sekisui Chemical Co., Ltd.) S) A solution obtained by stirring and mixing 10 parts by mass and 45 parts by mass of butanol was applied to the surface of an Al substrate having an outer diameter of 84 mm, and dried by heating at 150 ° C. for 10 minutes, thereby subtracting a film thickness of 1.0 μm. A layer was formed.

-Formation of charge generation layer-
Next, a mixture obtained by mixing 1 part by mass of chlorogallium phthalocyanine as a charge generation material with 1 part by mass of polyvinyl butyral (trade name: S-REC BM-S manufactured by Sekisui Chemical Co., Ltd.) and 100 parts by mass of n-butyl acetate. Dispersion with a glass bead with a paint shaker for 1 hour gave a dispersion for forming a charge generation layer.
This dispersion was applied on the undercoat layer by an immersion method and then dried at 100 ° C. for 10 minutes to form a charge generation layer having a thickness of 0.15 μm.

-Formation of charge transport layer-
Next, 2 parts by mass of a compound represented by the following structural formula (1) and 3 parts by mass of a polymer compound (weight average molecular weight: 39000) represented by the following structural formula (2) are added to 20 parts by mass of chlorobenzene. Dissolved to obtain a coating liquid for forming a charge transport layer.

  This coating solution is applied onto the charge generation layer by an immersion method, heated at 110 ° C. for 40 minutes to form a 20 μm-thick charge transport layer, and the undercoat layer, the charge generation layer, and the charge transport layer are formed on the Al substrate. An organic photoreceptor (hereinafter, sometimes referred to as “non-coated photoreceptor”) in which the layers were laminated in this order was obtained.

-Formation of surface layer-
The surface layer was formed on the surface of the non-coated photoconductor using a film forming apparatus having the configuration shown in FIG.
First, the non-coated photoreceptor was placed on the substrate holder 13 in the film forming chamber 10 of the film forming apparatus, and the film forming chamber 10 was evacuated through the exhaust port 11 until the pressure reached about 0.1 Pa. Next, a gas obtained by mixing methane gas, He gas, hydrogen gas, and oxygen gas is supplied from a gas introduction tube 20 into a high-frequency discharge tube portion 21 provided with a plate electrode 19 having a diameter of 100 mm (methane gas 100 sccm, He Gas (150 sccm, hydrogen 200 sccm, oxygen 0.3 sccm) is introduced, and a high frequency power supply unit 18 and a matching circuit (not shown in FIG. 4) set a 13.56 MHz radio wave to an output of 100 W, and matching is performed with a tuner. 19 was discharged. The reflected wave at this time was 0 W.
Next, a mixed gas containing trimethylgallium gas using hydrogen gas as a carrier gas is supplied from a shower nozzle 16 (nozzle diameter 2 mm, number of nozzles 20, nozzle interval 20 mm, linearly arranged in a line) through a gas introduction pipe 15. The trimethylgallium gas was introduced into the plasma diffusion part 17 in the film forming chamber 10 so that the flow rate thereof was 3 sccm. At this time, the reaction pressure in the film forming chamber 10 measured with a Baratron vacuum gauge (MKS, absolute pressure transducer type 622A) was 40 Pa.

In this state, the non-coated photoreceptor was rotated for 60 minutes while rotating at a speed of 1 rpm, a 0.22 μm- thick GaO film containing hydrogen and carbon was formed, and a surface layer was provided on the surface of the charge transport layer A photoreceptor was obtained. In the film formation, the non-coated photoconductor was not heat-treated. In addition, in order to monitor the temperature at the time of film formation, the temperature of the temperature measurement sticker (manufactured by Wahl, Temp Plate P / N101) previously attached to the surface of the non-coated photoreceptor before film formation is formed. When confirmed later, it was about 45 ° C.

-Analysis and evaluation of surface layer-
In the film formation on the surface of the non-coated photoconductor, the infrared absorption spectrum of the sample film formed on the Si substrate under the same conditions was measured. Was confirmed. From these, it was found that the surface layer contained gallium, carbon, hydrogen and oxygen. The relative intensity of the absorption peak due to the C—H bond and Ga—H bond was 0.2 and 0.005, respectively, and the half width of the absorption peak due to the Ga—ON bond was 230 cm ⁻¹ .
Further, regarding the composition of the constituent atoms of the sample film, hydrogen was measured using Rutherford back scattering, and group 13 elements, carbon, oxygen, and nitrogen were measured using hydrogen forward scattering. From the results, it was found that gallium, carbon, oxygen, and hydrogen were 33 atom%, 10 atom%, 38 atom%, and 19 atom%, respectively. Oxygen was distributed throughout the surface layer, and nitrogen contained in the surface layer was below the detection limit (0.5 atomic%).

Only the halo pattern was seen in the diffraction image obtained by RHEED (reflection high energy electron diffraction) measurement, and it was found that the film was an amorphous film.
Moreover, even if the sample film formed on the Si substrate immediately after film formation was immersed in water, no trace remained. The contact angle with pure water was 95 °. Moreover, even if the surface was rubbed with stainless steel or Si crystal, no damage was given.
From the above analysis and evaluation results, it was found that the surface layer formed on the surface of the non-coated photoreceptor is an amorphous film and is gallium oxide containing hydrogen and has water resistance, water repellency and sufficient hardness. .

-Evaluation-
Next, the electrophotographic characteristics of the organic photoreceptor provided with this surface layer were evaluated. First, exposure light (light source: semiconductor laser, wavelength 780 nm, output 5 mW) is applied to the above-described non-coated photoreceptor before the surface layer formation and the photoreceptor provided with the surface layer, and the surface of the photoreceptor is While rotating at 40 rpm while scanning, the residual potential on the surface after irradiation with negative charge of −700 V by a scorotron charger was measured. As a result, it was found that the organic photoreceptor provided with the surface layer is -40 V or less and has a low temperature / humidity dependency and a good level while the non-coated photoreceptor is -20V.
In addition, for the influence on the sensitivity, the wavelength of the light source was evaluated from the infrared region to the entire visible region, but there was almost no difference between the non-coated photoreceptor and the photoreceptor provided with the surface layer, and the surface layer was provided. It was found that there was no decrease in sensitivity due to the above.
Further, a peel test was performed on the surface of the photoreceptor provided with the surface layer to peel off the attached adhesive tape. The surface layer did not peel at all, and it was found that the adhesion was good.

Next, the photoconductor provided with this surface layer was attached to DocuCenter Color 500 manufactured by Fuji Xerox Co., Ltd., and a continuous 20000 print test was performed under a high temperature and high humidity environment (28 ° C., 80%). As a reference for image quality evaluation, a non-coated photoconductor was also attached to the DocuCenter Color 500 to form a similar image.
As a result, at the initial stage of the print test and after the end of the print test, 10 / mm of a clear image similar to the image of the initial stage of the print test formed using the non-coated photoreceptor and having no image blur at the halftone dot portion. The resolution could be obtained. Further, when the surface of the photoreceptor after the print test was visually observed, no scratches were observed, and the wear due to film thickness measurement was 0.0 μm. Furthermore, no adhesion of discharge products on the surface of the photoreceptor after the print test was confirmed. Further, the slide on the surface of the photosensitive member before the print test was a qualitative test rubbed with a clean tissue (Bencot) and had a good sliding property and a low friction. On the other hand, in the non-coated photoconductor, scratches were generated on the surface of the photoconductor after the print test, and the wear was 0.3 μm.
From the above results, it was found that the photoconductor provided with the surface layer has improved durability and is practically satisfactory in terms of image quality such as sensitivity and image blur.

(Examples B2 , B4, Reference Examples B3, B5- B7)
In Example B1, film formation was performed in the same manner as in Example B1, except that the gas containing trimethylgallium (TMG), the flow rate of CH ₄ , He, H ₂ and oxygen and the ratio thereof were changed as shown in Table 1. An organic photoreceptor having a surface layer formed thereon was prepared and evaluated in the same manner as in Example B1. The results are shown in Table 1.

(Example B8)
Except that the formation of the surface layer in Example B1 was changed as described below, a film was formed in the same manner as in Example B1 to produce an organic photoreceptor having a surface layer, which was evaluated in the same manner as in Example B1. . The results are shown in Table 1.

-Formation of surface layer-
The surface layer was formed on the surface of the non-coated photoconductor using a film forming apparatus having the configuration shown in FIG.
First, the non-coated photoreceptor was placed on the substrate holder 13 in the film forming chamber 10 of the film forming apparatus, and the film forming chamber 10 was evacuated through the exhaust port 11 until the pressure reached about 0.1 Pa. Next, a gas mixture of methane gas, He gas, hydrogen gas, and oxygen gas is supplied from a gas introduction tube 20 into a high-frequency discharge tube portion 21 provided with a plate electrode 19 having a diameter of 100 mm (532 sccm (methane gas 100 sccm, hydrogen 400 sccm, (2 sccm of oxygen, 30 sccm of nitrogen) is introduced, and a radio wave of 13.56 MHz is set to an output of 100 W by the high frequency power supply unit 18 and a matching circuit (not shown in FIG. 4), matching is performed by the tuner, and discharge from the plate electrode 19 is performed. It was. The reflected wave at this time was 0 W.
Next, a mixed gas containing trimethylgallium gas using hydrogen gas as a carrier gas is supplied from a shower nozzle 16 (nozzle diameter 2 mm, number of nozzles 20, nozzle interval 20 mm, linearly arranged in a line) through a gas introduction pipe 15. The trimethylgallium gas was introduced into the plasma diffusion part 17 in the film forming chamber 10 so that the flow rate thereof was 3 sccm. At this time, the reaction pressure in the film forming chamber 10 measured with a Baratron vacuum gauge (MKS, absolute pressure transducer type 622A) was 40 Pa.

In this state, the non-coated photoreceptor was rotated for 60 minutes while rotating at a speed of 1 rpm, a 0.22 μm- thick GaO film containing hydrogen and carbon was formed, and a surface layer was provided on the surface of the charge transport layer A photoreceptor was obtained. In the film formation, the non-coated photoconductor was not heat-treated. In addition, in order to monitor the temperature at the time of film formation, the temperature of the temperature measurement sticker (manufactured by Wahl, Temp Plate P / N101) previously attached to the surface of the non-coated photoreceptor before film formation is formed. When confirmed later, it was about 45 ° C.

( Reference Example B9)
In Example B8, film formation was performed in the same manner as in Example B1 except that the gas containing trimethylgallium (TMG), the flow rate of CH ₄ , H ₂ , oxygen, and nitrogen and the ratio thereof were changed as shown in Table 1. An organic photoreceptor having a surface layer formed thereon was prepared and evaluated in the same manner as in Example B1. The results are shown in Table 1.

(Example B10)
Except that the formation of the surface layer in Example B1 was changed as described below, a film was formed in the same manner as in Example B1 to produce an organic photoreceptor having a surface layer, which was evaluated in the same manner as in Example B1. . The results are shown in Table 1.

-Formation of surface layer-
The surface layer was formed on the surface of the non-coated photoconductor using a film forming apparatus having the configuration shown in FIG.
First, the non-coated photoreceptor was placed on the substrate holder 13 in the film forming chamber 10 of the film forming apparatus, and the film forming chamber 10 was evacuated through the exhaust port 11 until the pressure reached about 0.1 Pa. Next, a gas obtained by mixing methane gas, He gas, hydrogen gas, and oxygen gas is supplied from a gas introduction tube 20 into a high frequency discharge tube portion 21 provided with a plate electrode 19 having a diameter of 100 mm (650.05 sccm (methane gas 50 sccm, hydrogen gas). 600 sccm, oxygen 0.05 sccm) and a high frequency power supply unit 18 and a matching circuit (not shown in FIG. 4) set a 13.56 MHz radio wave to an output of 100 W, and matching is performed by a tuner to discharge from the plate electrode 19. went. The reflected wave at this time was 0 W.
Next, a mixed gas containing trimethylaluminum (TMA) using hydrogen gas as a carrier gas is arranged in a straight line through a gas introduction pipe 15 in a shower nozzle 16 (nozzle diameter 2 mm, number of nozzles 20, nozzle interval 20 mm, linear). ) To the plasma diffusion part 17 in the film forming chamber 10 so that the flow rate of the trimethylgallium gas is 2 sccm. At this time, the reaction pressure in the film forming chamber 10 measured with a Baratron vacuum gauge (MKS, absolute pressure transducer type 622A) was 40 Pa.

In this state, the non-coated photoreceptor was rotated for 60 minutes while rotating at a speed of 1 rpm, a 0.22 μm- thick GaO film containing hydrogen and carbon was formed, and a surface layer was provided on the surface of the charge transport layer A photoreceptor was obtained. In the film formation, the non-coated photoconductor was not heat-treated. In addition, in order to monitor the temperature at the time of film formation, the temperature of the temperature measurement sticker (manufactured by Wahl, Temp Plate P / N101) previously attached to the surface of the non-coated photoreceptor before film formation is formed. When confirmed later, it was about 45 ° C.

(Example B11, Reference Example B12-14 )
In Reference Example B9, except that the flow rates and ratios of CH ₄ , H _2, and oxygen were changed as shown in Table 1, film formation was performed in the same manner as Reference Example B9 to produce an organic photoreceptor having a surface layer formed. Then, it was evaluated in the same manner as in Example B1. The results are shown in Table 1.

(Example B15 to Example B18)
On the Al base having the same outer diameter of 84 mm and 4 mm as the Al base used in Example B1, a charge injection blocking layer made of n-type Si ₃ N with a thickness of 3 μm and an i-type with a thickness of 20 μm. Examples B1 to B were formed on the surface of a negatively charged amorphous silicon photoreceptor in which an amorphous silicon photosensitive layer and a 0.5 μm-thick charge injection blocking surface layer made of p-type Si ₂ C were laminated in this order. The surface layer was formed in the same manner as in B2, Reference Example B3 to Reference Example B4, and evaluation was performed in the same manner as in Example B1 using a printer in which the charging potential and the developing device were adjusted for the negatively charged amorphous silicon photoconductor. went. The results are shown in Table 1.

(Comparative Example B1, Comparative Example B2)
As Comparative Example B1, Example B1 was the same as Example B1 except that the gas containing trimethylgallium (TMG), CH ₄ , He, H _2, and oxygen flow rates and ratios thereof were changed as shown in Table 1. Similarly, an organic photoreceptor having a surface layer formed thereon was prepared and evaluated in the same manner as in Example B1. The results are shown in Table 1.
Further, as Comparative Example B2, Example B5 was different from Example B5 except that the gas containing trimethylgallium (TMG), the flow rate of CH ₄ , H ₂ and oxygen and the ratio thereof were changed as shown in Table 1. Similarly, an organic photoreceptor having a surface layer formed thereon was prepared and evaluated in the same manner as in Example B5. The results are shown in Table 1.

(Comparative Example B3)
As Comparative Example B3, Example B10 was the same as Example B10 except that the gas containing trimethylaluminum (TMA), CH ₄ , He, H _2, and oxygen flow rates and ratios thereof were changed as shown in Table 1. Similarly, an organic photoreceptor having a surface layer formed thereon was prepared and evaluated in the same manner as in Example B10. The results are shown in Table 1.
Note that the photoconductors of Comparative Examples B1 to B3 tend to have a property that the surface layer oxidizes when left in the atmosphere, but the image forming apparatus does not intentionally oxidize the surface of the photoconductor. A mounting evaluation was conducted.

  The flow rate “sccm” in the above Examples, Comparative Examples, and Tables indicates the flow rate at 1 atm (atmospheric pressure 1,013 hPa) and 0 ° C.

In addition, the evaluation method of each item shown in Table 1 and its evaluation criteria are as follows.
-Hardness-
The hardness is the degree of occurrence of scratches on the film surface when the corner of a Si crystal having a size of 5 × 10 mm is lightly pressed and rubbed against a 10 × 10 mm film formed on a Si crystal substrate used for infrared absorption spectrum measurement. Was visually evaluated according to the following criteria.
G1: No scratch is generated.
G2: When the observation angle of the film surface after rubbing is changed, a scratched rubbing is observed, but there is no practical problem.
G3: Scratches that can be easily confirmed visually are observed on the film surface.

-Slip-
The slip was evaluated by sensory evaluation of the slip condition when the surface of the photoreceptor before the print test was rubbed with a clean tissue (Bencot). The evaluation criteria are as follows.
G1: There is no feeling of being caught between Bencot and the surface of the photoreceptor, and the sliding is very good.
G2: Although there may be a slight squeezing between the becot and the surface of the photosensitive member, the slip is basically good.
G3: There is a feeling of being caught between Bencott and the photoreceptor surface.

-Initial water resistance-
Initial water resistance was evaluated by immersing a sample film formed on a Si substrate immediately after film formation in pure water for 10 seconds and then pulling it up and observing the surface state of the film with the naked eye. The evaluation criteria are as follows.
G1: No change is observed on the surface of the film before and after immersion in pure water.
G2: There is a difference in interference color in which a slight change is observed on the surface of the film before and after immersion in pure water.
G3: A change is observed on the surface of the film before and after immersion in pure water, and the film surface after immersion is deliquescent.

-Initial contact angle-
The initial contact angle is purely applied to a sample film formed on a Si substrate immediately after film formation in a 23 ° C./55% RH environment using a contact angle measuring device CA-X roll type (manufactured by Kyowa Interface Science Co., Ltd.). It was measured by dropping water. In addition, the average value at the time of repeating the measurement three times at different locations was determined as the contact angle.

-White stripe-
The white streak defect on the image was evaluated for the images before and after the completion of printing 20000 sheets. The evaluation criteria are as follows.
G1: White stripe-like image defects are hardly seen.
G2: Three or more white streak-like image defects that are considered to be caused by scratches on the photoreceptor are observed.

G3: Ten or more white streak-like image defects that are considered to be caused by scratches on the photoreceptor are observed.

-Image blur-
Image blur is a part of the photoreceptor surface (90 ° area on the outer peripheral surface (total area) in order to remove water-soluble discharge products after a print test of 20,000 sheets in a high temperature and high humidity environment of 30 ° C. and 80%. 45%)).
After that, a halftone image (image density 30%) is printed, and it is judged whether or not the density difference corresponding to the location where the surface of the photoconductor is wiped and the location where it is not wiped can be visually confirmed in the halftone image. When the density difference can be easily confirmed at a glance, it is determined that the image blur has occurred.

As shown in Table 1, in Examples B1, B2 , B4, Reference Examples B3, B5- B7, B9, B12-B14 , Examples B8 , B10, B11, B15- B18, compared with Comparative Examples B1-B3 In addition, good results were obtained in terms of hardness, slip, initial water resistance, and initial contact angle, and image quality evaluation results were also good. From this, in Examples B1, B2, B4, B8, B10, B11, B15 to B18, good photoconductivity (equivalent to evaluation photocurrent), good mechanical properties (equivalent to evaluation hardness), and It can be said that good oxidation resistance (equivalent to image quality at high temperature and high humidity) was obtained.

FIG. 2 is a schematic cross-sectional view illustrating an example of a layer configuration of a photoreceptor according to the present embodiment. FIG. 6 is a schematic cross-sectional view showing another example of the layer configuration of the photoconductor of the present exemplary embodiment. FIG. 6 is a schematic cross-sectional view showing another example of the layer configuration of the photoconductor of the present exemplary embodiment. It is a schematic diagram showing an example of a film forming apparatus used for forming the surface layer of the photoreceptor of the present embodiment. It is a schematic diagram which shows the other example of the plasma generator which can be utilized in the film-forming apparatus shown in FIG. 1 is a schematic configuration diagram illustrating an example of a schematic configuration of an image forming apparatus according to an exemplary embodiment. It is a schematic cross section which shows an example of the light receiving element which concerns on the form of this Embodiment.

Explanation of symbols

30 Image forming apparatus 32 Photoreceptor 50 Light receiving element 54 Photoconductive layer

Claims (7)

A substrate, a photosensitive layer, and a surface layer, and the photosensitive layer and the surface layer are laminated in this order on the substrate;
The surface layer contains a group 13 element, 2 atomic% or more and 15 atomic% or less carbon, and 20 atomic% or more and 55 atomic% or less oxygen, and the total content (atomic%) of the carbon and oxygen is 13 A photoreceptor having a ratio with respect to the content (atomic%) of a group element of 1.2: 1 to 1.9 : 1. The photoreceptor according to claim 1 , wherein the oxygen is contained in an amount of 30 atomic% to 53 atomic%. 2. The photoreceptor according to claim 1 , wherein the surface layer contains nitrogen. The photoconductor according to claim 1 , wherein the surface layer contains hydrogen. The photoreceptor according to claim 1 , wherein the photosensitive layer contains an organic material. A photosensitive member comprising a substrate, a photosensitive layer, and a surface layer, the photosensitive layer and the surface layer being laminated in this order on the substrate; a charging unit that charges the photosensitive member; And at least one selected from the group consisting of an exposure unit that forms a latent image, a developing unit that develops the electrostatic latent image, and a removing unit that removes deposits on the photoconductor. It is detachable from the forming device body,
The surface layer contains a group 13 element, 2 atomic% or more and 15 atomic% or less carbon, and 20 atomic% or more and 55 atomic% or less oxygen, and the total content (atomic%) of the carbon and oxygen is 13 A process cartridge having a ratio of 1.2: 1 to 1.9 : 1 with the content (atomic%) of a group element. A photosensitive member including a substrate, a photosensitive layer, and a surface layer, the photosensitive layer and the surface layer being laminated on the substrate in this order; a charging unit that charges the surface of the photosensitive member; and the charging unit that is charged A latent image forming unit that exposes the surface of the photoconductor to form an electrostatic latent image; a developing unit that develops the electrostatic latent image with a developer containing toner; and a toner image that is recorded Transfer means for transferring to a medium, wherein the surface layer contains a group 13 element, 2 atomic% or more and 15 atomic% or less carbon, and 20 atomic% or more and 55 atomic% or less oxygen, An image forming apparatus, wherein a ratio of a total content (atomic%) to a content of the group 13 element (atomic%) is 1.2: 1 to 1.9 : 1.