JP5144327B2 - Photoelectric conversion element, photoelectric conversion module, and method for manufacturing photoelectric conversion element - Google Patents

Description

  The present invention relates to a photoelectric conversion element that converts light energy into electric energy, a photoelectric conversion module, and a method for manufacturing the photoelectric conversion element.

  Conventionally, as a thin film silicon solar cell, for example, there are technologies disclosed in Patent Documents 1 and 2. In Patent Document 1, a photoelectric conversion layer provided in a divided manner on a substrate, the photoelectric conversion layers that are inclined toward each other as the opposing side surface portions of adjacent photoelectric conversion layers move toward the substrate side, and An insulating film that covers one of the opposing side surface portions of the adjacent photoelectric conversion layer and the substrate between the adjacent photoelectric conversion layers, and a conductive film that passes over the insulating film and electrically connects the adjacent photoelectric conversion layers Is disclosed.

Patent Document 2 discloses a photovoltaic element having a power generation layer and an electrode layer formed on a conductive material and having flexibility.
JP 7-45853 A JP 2002-151708 A

  By the way, in the prior art disclosed in Patent Document 1, a part of the photoelectric conversion layer is removed after the photoelectric conversion layer is formed on the entire surface of the substrate, so that there is a problem that silicon (Si) material is wasted. .

  Moreover, in the prior art disclosed in Patent Document 2, since the collector electrode is on the surface, the collector electrode blocks light. As a result, there is a problem that a part where the collector electrode is located becomes a non-power generation region, and conversion efficiency is poor.

  The present invention has been made by paying attention to such conventional problems, and its purpose is to reduce the amount of semiconductor material such as silicon (Si) used and to improve the conversion efficiency. It is providing the manufacturing method of a photoelectric conversion module and a photoelectric conversion element.

In order to solve the above problems, a photoelectric conversion element according to the invention described in claim 1 covers a belt-shaped glass substrate having a width of 1 mm or more and 20 mm or less, the entire surface of the glass substrate on the power generation layer side, and a substrate end surface portion . A transparent conductive film formed as described above, a power generation layer formed of a semiconductor film having a pn structure or a pin structure formed on the entire portion of the transparent conductive film excluding both ends on the long side, and the transparent An insulating film that covers both ends on the long side of the conductive film, and a conductive film that covers the entire surface of the power generation layer opposite to the transparent conductive film .

  According to this configuration, the transparent conductive film, the power generation layer, and the conductive film are in the form of a strip like the strip-shaped glass substrate. Here, the “strip shape” means a narrow and narrow shape.

When sunlight enters from the glass substrate side and this light enters the power generation layer, carriers are generated by absorption of light inside the power generation layer (conduction electrons increase), and the generated electrons are generated by the n-type conductivity of the power generation layer. The transparent conductive film on the semiconductor film side or the conductive film on the side of the conductive film is moved to the end in the width direction by a half of the width. In addition, the generated holes move up to ½ of the maximum width to the transparent conductive film on the side of the p-type conductive semiconductor film side of the power generation layer or the width direction end side of the conductive film. For this reason, the voltage drop due to the resistance of the transparent conductive film or the conductive film in which electrons and holes move is small and the loss is small. Therefore, a photoelectric conversion element having good conversion efficiency (conversion efficiency from light energy to electric energy) used for a solar cell or the like can be obtained.
According to this configuration, since the width of the glass substrate is 1 mm or more, it is easy to handle the photoelectric conversion elements when a plurality of photoelectric conversion elements are arranged to produce a photoelectric conversion module. In addition, since the width of the glass substrate is 20 mm or less, the distance that carriers generated by light hit the transparent conductive film move in the width direction is shortened, and the voltage drop due to the transparent conductive film is small. Therefore, the loss at the transparent conductive film portion can be reduced.

  Further, in a single photoelectric conversion element, a semiconductor film made of, for example, silicon (Si) is used only for a portion that contributes to power generation. When a plurality of photoelectric conversion elements are arranged to produce a photoelectric conversion module, it is not necessary to remove a part of the power generation layer made of Si or the like, so that valuable semiconductor materials such as Si are not wasted. . Therefore, the amount of semiconductor material such as Si used can be reduced.

  Here, the “surface of the glass substrate” refers to a surface opposite to the outer surface on which sunlight is incident, that is, a surface on the power generation layer side.

The photoelectric conversion element according to the invention of claim 2 has the auxiliary electrode is formed on an end face portion of the long side of the front Symbol transparent conductive film, and the insulating film at both ends and the said transparent conductive film The photoelectric conversion element according to claim 1, wherein the photoelectric conversion element is formed so as to cover the auxiliary electrode.

  According to this configuration, the carriers collected on the transparent conductive film side out of the carriers generated by the incidence of light on the power generation layer move to the width direction end side of the transparent conductive film and reach the both ends of the transparent conductive film. Since current is collected by a certain auxiliary electrode, the conversion efficiency is further improved. Moreover, since the auxiliary electrode is provided at both ends of the transparent conductive film, there is no current collecting electrode on the power generation layer. That is, the entire power generation layer becomes a power generation region. Also in this respect, a photoelectric conversion element with high conversion efficiency can be obtained.

  The photoelectric conversion element according to the invention of claim 3 is characterized in that second auxiliary electrodes are provided at both ends of the conductive film.

  According to this configuration, by adding the second auxiliary electrode to the conductive film, the resistance value is reduced and the conversion efficiency is further improved. Further, since the first and second auxiliary electrodes are provided at both ends of the transparent conductive film and the conductive film, respectively, there is no current collecting electrode on the power generation layer. That is, the entire power generation layer becomes a power generation region. Also in this respect, a photoelectric conversion element with high conversion efficiency can be obtained.

  The photoelectric conversion element according to the invention of claim 4 is characterized in that the conductive film is made of a transparent conductive film.

  According to this configuration, by making the conductive film a transparent conductive film, light can be incident not only from the glass substrate side but also from the surface on the power generation layer side, and the conversion efficiency is further improved. Moreover, since both electrodes become transparent conductive films, a photoelectric conversion element having see-through property can be obtained.

The photoelectric conversion element according to the invention of claim 5 is characterized in that the semiconductor film is a silicon thin film.

  According to this configuration, valuable silicon (Si) material is not wasted. Therefore, the amount of semiconductor material such as Si used can be reduced.

A photoelectric conversion module according to a sixth aspect of the present invention is a photoelectric conversion module in which a plurality of the photoelectric conversion elements according to any one of the first to sixth aspects are arranged side by side to electrically connect two adjacent photoelectric conversion elements. It is connected.

  According to this configuration, in each photoelectric conversion element, the carriers generated by the light are moved to the width of the band-shaped transparent conductive film and the width direction end of the conductive film by a maximum of ½ of the width. That is, the generated electrons move up to ½ of the width at the maximum in the width direction end portion side of the transparent conductive film or the conductive film on the n-type conductive semiconductor film side of the power generation layer. In addition, the generated holes move up to ½ of the maximum width to the transparent conductive film on the side of the p-type conductive semiconductor film side of the power generation layer or the width direction end side of the conductive film. For this reason, the voltage drop by resistance of the transparent conductive film in each photoelectric conversion element is small, and there is little loss. Therefore, a photoelectric conversion module with high conversion efficiency used for a solar cell panel or the like can be obtained. Further, in a single photoelectric conversion element, a semiconductor film made of, for example, silicon (Si) is used only for a portion that contributes to power generation. When a plurality of photoelectric conversion elements are arranged to produce a photoelectric conversion module, it is not necessary to remove a part of the power generation layer made of Si or the like, so that valuable semiconductor materials such as Si are not wasted. . Therefore, the amount of semiconductor material such as Si used can be reduced.

The photoelectric conversion module according to the invention described in claim 7 is characterized in that a plurality of the photoelectric conversion elements are electrically connected in parallel between the two adjacent photoelectric conversion elements.

  According to this configuration, the current value can be increased by electrically connecting a plurality of photoelectric conversion elements in parallel. The electrical connection is made, for example, by wire bonding or soldering.

The photoelectric conversion module according to an eighth aspect of the invention is characterized in that a plurality of the photoelectric conversion elements are electrically connected in series between two adjacent photoelectric conversion elements.

  According to this configuration, by electrically connecting a plurality of photoelectric conversion elements in series, the voltage generated in each photoelectric conversion element is integrated, so that the voltage value can be increased.

The photoelectric conversion element according to the invention according to claim 9 is provided on the entire surface of one side excluding the strip-shaped conductive substrate having a width of 1 mm or more and 20 mm or less and both ends on the long side on the conductive substrate. A power generation layer composed of a semiconductor film having a pn structure or a pin structure formed, an insulating film covering both ends and end surfaces of the long side of the conductive base material, and the conductive base material of the power generation layer And a transparent conductive film formed so as to cover the entire surface on the opposite side.

According to this configuration, the transparent conductive film and the power generation layer are in the form of a strip as in the case of the strip-shaped conductive substrate. When sunlight enters from the transparent conductive film side and this light enters the power generation layer, carriers are generated by absorption of light inside the power generation layer (conduction electrons increase), and these electrons increase the n-type conductivity of the power generation layer. The transparent conductive film on the semiconductor film side or the conductive substrate is moved to the end in the width direction by a half of the width at the maximum. In addition, the generated holes move up to ½ of the width at the maximum in the width direction end of the transparent conductive film or conductive substrate on the p-type conductive semiconductor film side of the power generation layer. For this reason, the voltage drop due to the resistance of the transparent conductive film or conductive substrate through which electrons and holes move is small, and the loss is small. Therefore, a photoelectric conversion element having good conversion efficiency (conversion efficiency from light energy to electric energy) used for a solar cell or the like can be obtained.
According to this configuration, since the width of the conductive substrate is set to 1 mm or more, it is easy to handle the photoelectric conversion elements when a plurality of photoelectric conversion elements are arranged to produce a photoelectric conversion module. In addition, since the width of the conductive base material is 20 mm or less, the distance that the carrier generated by exposure to light, that is, the hole is separated from the electron by the built-in electric field and the transparent conductive film moves to the end in the width direction. The voltage drop due to the transparent conductive film is small. Therefore, the loss at the transparent conductive film portion can be reduced.

  Further, in a single photoelectric conversion element, a semiconductor film made of, for example, silicon (Si) is used only for a portion that contributes to power generation. And when arranging a plurality of photoelectric conversion elements to produce a photoelectric conversion module, it is not necessary to remove a part of the power generation layer made of Si or the like, so that valuable semiconductor materials such as Si are not wasted. . Therefore, the amount of semiconductor material such as Si used can be reduced.

The photoelectric conversion element according to the invention described in claim 10 is characterized in that an auxiliary electrode is provided on an end surface portion on the long side of the transparent conductive film.

  According to this configuration, carriers generated when light is incident on the power generation layer move to the width direction end of the transparent conductive film and are collected by the auxiliary electrodes at both ends of the transparent conductive film. The conversion efficiency is further improved. Moreover, since the auxiliary electrode is provided at both ends of the transparent conductive film, there is no current collecting electrode on the power generation layer. That is, the entire power generation layer becomes a power generation region. Also in this respect, a photoelectric conversion element with high conversion efficiency can be obtained.

The photoelectric conversion element according to the invention of claim 11 is characterized in that a transparent conductive film is provided between the conductive substrate and the power generation layer. According to this configuration, since the mutual diffusion between the conductive substrate and the power generation layer is suppressed by the transparent conductive film, a highly reliable and long-life photoelectric conversion element can be obtained.

The photoelectric conversion element according to the invention described in claim 12 is characterized in that the semiconductor film is a silicon thin film.

  According to this configuration, valuable silicon (Si) material is not wasted. Therefore, the amount of semiconductor material such as Si used can be reduced.

A photoelectric conversion module according to a thirteenth aspect of the present invention is the photoelectric conversion module according to any one of the ninth to twelfth aspects, wherein a plurality of the photoelectric conversion elements are arranged side by side and electrically connected between two adjacent photoelectric conversion elements. It is connected.

  According to this configuration, in each photoelectric conversion element, electrons out of the carriers generated by exposure to light are in the form of a strip-shaped conductive substrate or transparent conductive film on the side of the semiconductor film having n-type conductivity of the power generation layer Moves up to 1/2 the width of the width direction end. In addition, the generated holes move up to ½ of the width at the maximum in the width direction end of the transparent conductive film or conductive substrate on the p-type conductive semiconductor film side of the power generation layer. For this reason, the voltage drop by resistance of the transparent conductive film or conductive base material in each photoelectric conversion element is small, and there is little loss. Therefore, a photoelectric conversion module with high conversion efficiency used for a solar cell panel or the like can be obtained. Further, in a single photoelectric conversion element, a semiconductor film made of, for example, silicon (Si) is used only for a portion that contributes to power generation. When a plurality of photoelectric conversion elements are arranged to produce a photoelectric conversion module, it is not necessary to remove a part of the power generation layer made of Si or the like, so that valuable semiconductor materials such as Si are not wasted. . Therefore, the amount of semiconductor material such as Si used can be reduced.

The photoelectric conversion module according to the invention described in claim 14 is characterized in that a plurality of the photoelectric conversion elements are electrically connected in parallel between the two adjacent photoelectric conversion elements.

  According to this configuration, the current value can be increased by electrically connecting the photoelectric conversion elements in parallel. The electrical connection is made, for example, by wire bonding or soldering.

The photoelectric conversion module according to the invention described in claim 15 is characterized in that a plurality of the photoelectric conversion elements are electrically connected in series between the two adjacent photoelectric conversion elements.

  According to this configuration, by electrically connecting in series, the voltage generated in each element is integrated and the voltage value can be increased.

In the method for producing a photoelectric conversion element according to the invention described in claim 16 , a belt-shaped glass substrate having a width of 1 mm or more and 20 mm or less is wound around a supply-side reel, and an end thereof is fixed to the take-up reel. Forming a transparent conductive film so as to cover the entire surface of the glass substrate on the power generation layer side and the substrate end surface, forming an insulating film covering both ends on the long side of the transparent conductive film, and transparent Forming a power generation layer composed of a semiconductor film having a pn structure or a pin structure on the conductive film; forming a conductive film covering the entire surface of the power generation layer opposite to the transparent conductive film ; Is continuously performed while winding the glass substrate on the winding-side reel.

  According to this configuration, the transparent conductive film, the power generation layer, and the conductive film formed on the belt-like glass substrate have a belt-like form like the belt-like glass substrate. The power generation layer and the conductive film can be formed with uniformity. For this reason, the capital investment is reduced and the manufacturing cost can be reduced. Moreover, since each said process is performed continuously, winding up a glass substrate to a winding side reel, productivity becomes high. Furthermore, since a photoelectric conversion module can be produced by arranging and electrically connecting a plurality of produced photoelectric conversion elements, valuable semiconductor materials such as Si are not wasted, and the amount of semiconductor materials such as Si used can be reduced. Can be reduced.

In the manufacturing method of the photoelectric conversion element according to the invention of claim 17 , a belt-shaped glass substrate having a width of 1 mm or more and 20 mm or less is wound around a supply-side reel, and the end thereof is fixed to the take-up reel. Forming a transparent conductive film so as to cover the entire surface of the glass substrate on the power generation layer side and the end surface of the substrate ; forming an auxiliary electrode on both end surfaces on the long side of the transparent conductive film; and Forming an insulating film covering both ends of the long side of the film and the auxiliary electrode; forming a power generation layer composed of a semiconductor film having a pn structure or a pin structure on the transparent conductive film; The step of forming a conductive film covering the entire surface of the power generation layer opposite to the transparent conductive film is continuously performed while winding the glass substrate on the winding reel.

  According to this configuration, the transparent conductive film, the power generation layer, and the conductive film formed on the belt-like glass substrate have a belt-like form like the belt-like glass substrate. The power generation layer and the conductive film can be formed with uniformity. For this reason, the capital investment is reduced and the manufacturing cost can be reduced. Moreover, since each said process is performed continuously, winding up a glass substrate to a winding side reel, productivity becomes high. Furthermore, since a photoelectric conversion module can be produced by arranging and electrically connecting a plurality of produced photoelectric conversion elements, valuable semiconductor materials such as Si are not wasted, and the amount of semiconductor materials such as Si used can be reduced. Can be reduced. Further, out of the carriers (electrons and holes) generated when light is incident on the power generation layer, the carriers collected on the transparent conductive film side move to the width direction end side of the transparent conductive film, and the transparent conductive film Since the current is collected by the auxiliary electrodes at both ends of the substrate, the conversion efficiency is further improved.

In the method for producing a photoelectric conversion element according to the invention described in claim 18 , a belt-shaped glass substrate having a width of 1 mm or more and 20 mm or less is wound around a supply-side reel, and the end thereof is fixed to the take-up reel. Forming a transparent conductive film so as to cover the entire surface of the glass substrate on the power generation layer side and the end face of the substrate ; forming a first auxiliary electrode on the end face on the long side of the transparent conductive film; Forming an insulating film covering both ends of the long side of the transparent conductive film and the first auxiliary electrode; and a power generation layer composed of a semiconductor film having a pn structure or a pin structure on the transparent conductive film A step of forming, a step of forming a conductive film covering the entire surface of the power generation layer opposite to the transparent conductive film, and a step of forming second auxiliary electrodes at both ends of the long side of the conductive film And the glass on the take-up reel While winding the plate, and carrying out continuously.

  According to this configuration, the transparent conductive film, the power generation layer, and the conductive film formed on the belt-like glass substrate have a belt-like form like the belt-like glass substrate. The power generation layer and the conductive film can be formed with uniformity. For this reason, the capital investment is reduced and the manufacturing cost can be reduced. Moreover, since each said process is performed continuously, winding up a glass substrate to a winding side reel, productivity becomes high. Furthermore, since a photoelectric conversion module can be produced by arranging and electrically connecting a plurality of produced photoelectric conversion elements, valuable semiconductor materials such as Si are not wasted, and the amount of semiconductor materials such as Si used can be reduced. Can be reduced. Furthermore, carriers (electrons and holes) generated when light enters the power generation layer move to the transparent conductive film or the width direction end of the conductive film, and are at both ends of the transparent conductive film or the conductive film. Since current is collected by one of the first and second auxiliary electrodes, the conversion efficiency is further improved.

In the manufacturing method of the photoelectric conversion element according to the invention of claim 19 , a belt-shaped glass substrate having a width of 1 mm or more and 20 mm or less is wound around the supply-side reel, and the end thereof is fixed to the take-up reel. Forming a transparent conductive film so as to cover the entire surface of the glass substrate on the power generation layer side and the end face of the substrate ; forming a first auxiliary electrode on the end face on the long side of the transparent conductive film; Forming an insulating film covering both ends of the long side of the transparent conductive film and the first auxiliary electrode; and a power generation layer composed of a semiconductor film having a pn structure or a pin structure on the transparent conductive film Forming a second transparent conductive film covering the entire surface of the power generation layer on the side opposite to the transparent conductive film, and forming a second transparent conductive film on both ends on the long side of the second transparent conductive film. The step of forming the auxiliary electrode of 2 and the winding While winding the glass substrate on the reel, and carrying out continuously.

  According to this configuration, since the transparent conductive film and the power generation layer formed on the belt-shaped glass substrate have a strip shape similar to the belt-shaped glass substrate, the transparent conductive film and the power generation layer are not enlarged. Can be formed while maintaining uniformity. For this reason, the capital investment is reduced and the manufacturing cost can be reduced. Moreover, since each said process is performed continuously, winding up a glass substrate to a winding side reel, productivity becomes high. Furthermore, since a photoelectric conversion module can be produced by arranging and electrically connecting a plurality of produced photoelectric conversion elements, valuable semiconductor materials such as Si are not wasted, and the amount of semiconductor materials such as Si used can be reduced. Can be reduced. Furthermore, the carriers (electrons and holes) generated when light is incident on the power generation layer move to the width direction end portion side of the transparent conductive film, and the first and second auxiliary at the both ends of the transparent conductive film. Since current is collected in either one of the electrodes, the conversion efficiency is further improved. Moreover, according to this structure, by making the said electrically conductive film into a transparent conductive film, light can be incident not only from the glass substrate side but from the surface of the power generation layer side, and the conversion efficiency is further improved. Moreover, since both electrodes become transparent conductive films, a photoelectric conversion element having see-through property can be obtained.

The method for producing a photoelectric conversion element according to the invention described in claim 20 is a state in which a strip-shaped conductive substrate having a width of 1 mm or more and 20 mm or less is wound around a supply-side reel, and an end thereof is fixed to the take-up reel. A step of forming insulating films covering both ends and end faces of the long side of the conductive base material, and a power generation layer composed of a semiconductor film having a pn structure or a pin structure on the conductive base material. A step of forming and a step of forming a transparent conductive film that covers the entire surface of the power generation layer opposite to the transparent conductive film while continuously winding the conductive base material on the winding-side reel. It is characterized by carrying out automatically.

  According to this configuration, since the power generation layer and the transparent conductive film formed on the strip-shaped conductive base material have a strip-like form like the strip-shaped conductive base material, the power generation layer is not enlarged. And a transparent conductive film can be formed maintaining uniformity. For this reason, the capital investment is reduced and the manufacturing cost can be reduced. Moreover, since each said process is continuously performed, winding up an electroconductive base material on a winding side reel, productivity becomes high. Furthermore, since a photoelectric conversion module can be produced by arranging and electrically connecting a plurality of produced photoelectric conversion elements, valuable semiconductor materials such as Si are not wasted, and the amount of semiconductor materials such as Si used can be reduced. Can be reduced.

The method for producing a photoelectric conversion element according to the invention of claim 21 is a state in which a strip-shaped conductive substrate having a width of 1 mm or more and 20 mm or less is wound around a supply-side reel, and an end thereof is fixed to the take-up reel. A step of forming insulating films covering both ends and end faces of the long side of the conductive base material, and a power generation layer composed of a semiconductor film having a pn structure or a pin structure on the conductive base material. A step of forming, a step of forming a transparent conductive film covering the entire surface of the power generation layer on the side opposite to the conductive substrate, and a step of forming auxiliary electrodes at both ends on the long side of the transparent conductive film Are continuously performed while winding the conductive base material on the winding side reel.

  According to this configuration, since the power generation layer and the transparent conductive film formed on the strip-shaped conductive base material have a strip-like form like the strip-shaped conductive base material, the power generation layer is not enlarged. And a transparent conductive film can be formed maintaining uniformity. For this reason, the capital investment is reduced and the manufacturing cost can be reduced. Moreover, since each said process is continuously performed, winding up an electroconductive base material on a winding side reel, productivity becomes high. Furthermore, since a photoelectric conversion module can be produced by arranging and electrically connecting a plurality of produced photoelectric conversion elements, valuable semiconductor materials such as Si are not wasted, and the amount of semiconductor materials such as Si used can be reduced. Can be reduced. Furthermore, the holes of the carriers generated when light is incident on the power generation layer move to the width direction end of the transparent conductive film on the p-type conductive semiconductor film side of the power generation layer, and the transparent layer Since current is collected by the auxiliary electrodes at both ends of the conductive film, the conversion efficiency is further improved.

The method for producing a photoelectric conversion element according to the invention of claim 22 is a state in which a strip-shaped conductive substrate having a width of 1 mm or more and 20 mm or less is wound around a supply-side reel, and an end thereof is fixed to the take-up reel. A step of forming a first transparent conductive film on the surface of the conductive substrate on the power generation layer side, and both ends and end surfaces of the long side of the conductive substrate and the first transparent conductive film A step of forming an insulating film covering a part, a step of forming a power generation layer made of a semiconductor film having a pn structure or a pin structure on the conductive base material, and the first transparent conduction of the power generation layer The step of forming a second transparent conductive film covering the entire surface opposite to the film is continuously performed while winding the conductive base material around the winding-side reel.

  According to this configuration, since the power generation layer and the transparent conductive film formed on the strip-shaped conductive base material have a strip-like form like the strip-shaped conductive base material, the power generation layer is not enlarged. And a transparent conductive film can be formed maintaining uniformity. For this reason, the capital investment is reduced and the manufacturing cost can be reduced. Moreover, since each said process is continuously performed, winding up an electroconductive base material on a winding side reel, productivity becomes high. Furthermore, since a photoelectric conversion module can be produced by arranging and electrically connecting a plurality of produced photoelectric conversion elements, valuable semiconductor materials such as Si are not wasted, and the amount of semiconductor materials such as Si used can be reduced. Can be reduced. In addition, since the transparent conductive film is provided between the conductive base material and the power generation layer, mutual diffusion between the conductive base material and the power generation layer is suppressed by the transparent conductive film. A high and long-life photoelectric conversion element can be obtained.

The method for manufacturing a photoelectric conversion element according to the invention of claim 23 is a state in which a strip-shaped conductive substrate having a width of 1 mm or more and 20 mm or less is wound around a supply-side reel, and an end thereof is fixed to the take-up reel. A step of forming a first transparent conductive film on the surface of the conductive substrate on the power generation layer side, and both ends and end surfaces of the long side of the conductive substrate and the first transparent conductive film A step of forming an insulating film covering a part, a step of forming a power generation layer made of a semiconductor film having a pn structure or a pin structure on the conductive base material, and the first transparent conduction of the power generation layer Forming a second transparent conductive film covering the entire surface opposite to the film, and forming an auxiliary electrode on both ends of the transparent conductive film, the conductive group on the take-up reel. It is characterized by being continuously performed while winding the material .

  According to this configuration, since the power generation layer and the transparent conductive film formed on the strip-shaped conductive base material have a strip-like form like the strip-shaped conductive base material, the power generation layer is not enlarged. And a transparent conductive film can be formed maintaining uniformity. For this reason, the capital investment is reduced and the manufacturing cost can be reduced. Moreover, since each said process is continuously performed, winding up an electroconductive base material on a winding side reel, productivity becomes high. Furthermore, since a photoelectric conversion module can be produced by arranging and electrically connecting a plurality of produced photoelectric conversion elements, valuable semiconductor materials such as Si are not wasted, and the amount of semiconductor materials such as Si used can be reduced. Can be reduced. Furthermore, the holes of the carriers generated when light is incident on the power generation layer move to the width direction end of the transparent conductive film on the p-type conductive semiconductor film side of the power generation layer, and the transparent layer Since current is collected by the auxiliary electrodes at both ends of the conductive film, the conversion efficiency is further improved. In addition, since the transparent conductive film is provided between the conductive base material and the power generation layer, mutual diffusion between the conductive base material and the power generation layer is suppressed by the transparent conductive film. A high and long-life photoelectric conversion element can be obtained.

  ADVANTAGE OF THE INVENTION According to this invention, the usage-amount of semiconductor materials, such as silicon (Si), can be reduced, and the photoelectric conversion element and photoelectric conversion module which aimed at the improvement of conversion efficiency can be obtained.

  Furthermore, according to the present invention, capital investment can be reduced, manufacturing costs can be reduced, productivity can be increased, and the amount of semiconductor material such as Si can be reduced.

Embodiments of a photoelectric conversion element and a photoelectric conversion module according to the present invention will be described below with reference to the drawings. In the description of each embodiment, the same parts are denoted by the same reference numerals, and redundant description is omitted.
(First embodiment)
The photoelectric conversion element according to the first embodiment will be described with reference to FIGS.

  FIG. 1 is a perspective view showing a photoelectric conversion module having a plurality of photoelectric conversion elements. FIG. 2 is a cross-sectional view showing the photoelectric conversion element 10 according to the first embodiment used in the photoelectric conversion module shown in FIG. FIG. 2 is an enlarged cross-sectional view of a portion A in FIG. FIG. 3 is an operation explanatory view showing a part of FIG. 2 in an enlarged manner.

  A photoelectric conversion module 1 shown in FIG. 1 has a configuration in which a plurality of photoelectric conversion elements 10 shown in FIG. 2 are arranged and two adjacent photoelectric conversion elements 10 are electrically connected.

  The photoelectric conversion element 10 includes a thin wire glass 11 as a belt-shaped glass substrate, a first transparent conductive film 12 formed so as to cover the entire surface of the thin glass 11, and both ends of the transparent conductive film 12. And a first auxiliary electrode 13 that assists the transparent conductive film 12. The first transparent conductive film 12 also has a thin line shape like the thin glass plate 11. The first auxiliary electrode 13 is a p-side electrode and is formed over both ends of the thin transparent conductive film 12.

  The photoelectric conversion element 10 further includes a power generation layer 14 formed on the entire portion of the first transparent conductive film 12 excluding both ends, and an insulating film that covers both ends of the transparent conductive film 12 and the first auxiliary electrode 13. 15, a second transparent conductive film 16 that covers the entire surface of the power generation layer 14, and a second auxiliary electrode 17 that is provided at both ends of the transparent conductive film 16 and assists the transparent conductive film 16.

  The power generation layer 14 and the second transparent conductive film 16 also have a thin line shape, similar to the thin glass plate 11. The second auxiliary electrode 17 is an n-side electrode, and is formed over both ends of the thin transparent conductive film 16. The insulating film 15 is formed so as to cover the entire both ends of the transparent conductive film 12 and the entire first auxiliary electrode 13.

  As shown in FIG. 3, the power generation layer 14 is composed of a semiconductor film having a pin structure made of p-type Si 18, i-type Si 19, and n-type Si 20. Each of the p-type Si18, i-type Si19, and n-type Si20 semiconductor films is made of, for example, silicon (Si).

  Specifically, the power generation layer 14 formed of a semiconductor film having a pin structure has one of the following three structures.

  (1) Each semiconductor film of p-type Si18, i-type Si19, and n-type Si20 is made of amorphous silicon.

  (2) Each of the p-type Si18, i-type Si19 and n-type Si20 semiconductor films is composed of microcrystalline silicon.

  (3) A part of the three semiconductor films of p-type Si18, i-type Si19 and n-type Si20 is made of amorphous silicon, and the rest is made of microcrystalline silicon.

  The width of the thin glass plate 11 is preferably a value in the range of 1 mm to 20 mm. If the width is less than 1 mm, it is difficult to handle the photoelectric conversion elements 10 when the photoelectric conversion elements 10 are arranged and the photoelectric conversion module 1 as shown in FIG. On the other hand, if the width exceeds 20 mm, the distance traveled by the carriers generated by light hitting the first transparent conductive film 12 or the second transparent conductive film 16 becomes long, and the voltage drop due to the transparent conductive film 16 is large. This is not preferable because the loss increases.

  The operation of the photoelectric conversion element 10 having the above configuration will be described with reference to FIGS.

  When sunlight is incident on the thin glass 11 as indicated by the arrow in FIG. 2, this light is incident on the power generation layer 14 through the first transparent conductive film 12. Thereby, in the power generation layer 14, carriers indicated by reference numeral “21” in FIG. 3 are generated by the internal photoelectric effect due to light absorption (conduction electrons increase), and the generated carriers exist at the interface of the pin structure of the power generation layer 14. Diffuse by built-in electric field. As a result, electrons move from the power generation layer 14 to the second transparent conductive film 16 as indicated by an arrow B in FIG. 3, and the second transparent conductive film 16 moves in the width direction and is collected by the auxiliary electrode 17. At the same time, holes move from the power generation layer 14 to the first transparent conductive film 12, travel through the first transparent conductive film 12 in the width direction, and are collected by the auxiliary electrode 13. Thereby, the generated electric power is extracted outside. In addition, also when sunlight injects from the 2nd transparent conductive film 16 side, the said operation | movement similar to the case where sunlight injects from the sheet glass 11 side is obtained.

  According to 1st Embodiment comprised as mentioned above, there exist the following effects.

  The first transparent conductive film 12, the power generation layer 14, and the second transparent conductive film 16 are in the form of a fine line like the thin line-shaped thin glass 11. When sunlight enters from one of the thin glass 11 and the second transparent conductive film 16 and this light enters the power generation layer 14, carriers are generated by absorption of light inside the power generation layer 14 (conduction electrons increase). ). The electrons move to the end of the second transparent conductive film 16 in the width direction of the second transparent conductive film 16 on the n-type Si (semiconductor film having n-type conductivity) 20 side of the power generation layer 14, and move up to a half of the width. Current is collected by the auxiliary electrode 17. In addition, the generated holes move up to ½ of the width at the maximum in the width direction end of the transparent conductive film 12 on the p-type Si (p-type conductive semiconductor film) 18 side of the power generation layer 14. The current is collected by the auxiliary electrode 13. For this reason, since the first transparent conductive film 12 has a narrow and narrow strip shape, the electron moving distance in the first transparent conductive film 12 is short. For this reason, the voltage drop due to the resistance of the first transparent conductive film 12 is small and the loss is small. Therefore, a photoelectric conversion element having good conversion efficiency (conversion efficiency from light energy to electric energy) used for a solar cell or the like can be obtained.

  In the photoelectric conversion element 10 alone, a semiconductor film made of, for example, silicon (Si) is used only for a portion that contributes to power generation. Further, when the photoelectric conversion module 1 as shown in FIG. 1 is manufactured by arranging a plurality of photoelectric conversion elements 10, it is not necessary to remove a part of the power generation layer 14 made of silicon, so that valuable silicon (Si) or the like is used. The semiconductor material is not wasted. Therefore, the amount of semiconductor material such as silicon (Si) used can be reduced.

  O The auxiliary electrodes 13 and 17 for current collection are respectively arranged outside the power generation layer 14, and no electrode for current collection exists on the power generation layer 14, so that also in this respect, a photoelectric conversion element with good conversion efficiency Is obtained.

  O Since the width of the thin glass plate 11 is 1 mm or more, the photoelectric conversion element 10 can be easily handled when the photoelectric conversion module 1 shown in FIG.

○ Since the width of the thin glass plate 11 is 20 mm or less, the distance that the carriers generated by exposure to light move the first transparent conductive film 12 or the second transparent conductive film 16 in the width direction is shortened. The voltage drop due to the transparent conductive film 12 and the transparent conductive film 16 is small. Therefore, the loss in the transparent conductive film 12 and the transparent conductive film 16 can be reduced.
(Second Embodiment)
FIG. 4 shows a photoelectric conversion module 1A according to the second embodiment.

  This photoelectric conversion module 1A is configured by arranging a plurality of photoelectric conversion elements 10 according to the first embodiment, and electrically connecting two adjacent photoelectric conversion elements 10 in parallel.

  Specifically, the second auxiliary electrodes 17, which are n-side electrodes of two adjacent photoelectric conversion elements 10, are electrically connected to each other by the connection portion 30, and the p-side electrodes of the two adjacent photoelectric conversion elements 10 are also connected. The first auxiliary electrodes 13 are electrically connected to each other through the connection portion 31. The connection part 30 and the connection part 31 are connection parts by soldering or wire bonding.

  According to 2nd Embodiment comprised as mentioned above, there exist the following effects.

A current value can be increased by electrically connecting a plurality of photoelectric conversion elements 10 in parallel to produce the photoelectric conversion module 1A.
(Third embodiment)
FIG. 5 shows a photoelectric conversion module 1B according to the third embodiment.

  This photoelectric conversion module 1B is configured by arranging a plurality of photoelectric conversion elements 10 according to the first embodiment, and electrically connecting two adjacent photoelectric conversion elements 10 in series.

  Specifically, the first auxiliary electrode 13 that is one p-side electrode of two adjacent photoelectric conversion elements 10 and the second auxiliary electrode 17 that is the other n-side electrode are connected to each other at the connection portion 32. Connect each one electrically.

  According to 3rd Embodiment comprised as mentioned above, there exist the following effects.

By electrically connecting the plurality of photoelectric conversion elements 10 in series, the voltage generated in each photoelectric conversion element 10 is integrated, so that the voltage value can be increased.
(Fourth embodiment)
FIG. 6 shows a photoelectric conversion element 10A according to the fourth embodiment. FIG. 7 is an operation explanatory view showing a part of FIG. 6 in an enlarged manner.

  This photoelectric conversion element 10A includes a thin-line conductive substrate 11A as a strip-shaped conductive substrate, a power generation layer 14A formed on the entire portion of the conductive substrate 11A excluding both ends, and a conductive property. An insulating film 15A that covers both ends of the substrate 11A and a transparent conductive film 16A that is formed to cover the entire surface of the power generation layer 14A are provided. Furthermore, the photoelectric conversion element 10A includes auxiliary electrodes 17A that assist the transparent conductive film at both ends of the transparent conductive film 16A.

  As shown in FIG. 7, the power generation layer 14A is formed of a semiconductor film having a pin structure made of p-type Si 18A, i-type Si 19A, and n-type Si 20A. Therefore, the auxiliary electrode 17A is a p-side electrode, and the conductive substrate 11A is an n-side electrode.

  The operation of the photoelectric conversion element 10A having the above configuration will be described with reference to FIGS.

  When sunlight enters the transparent conductive film 16A, this light enters the power generation layer 14A through the transparent conductive film 16A. As a result, in the power generation layer 14A, carriers (carrier 21A in FIG. 7) are generated (increased conduction electrons) by the internal photoelectric effect due to light absorption, and diffused by the built-in electric field present at the interface of the pin structure of the power generation layer 14A. .

  As a result, electrons move from the power generation layer 14A to the conductive base material 11A on the n-type Si (semiconductor film having n-type conductivity) 20A side, as indicated by an arrow B in FIG. Moves to the end of 11A in the width direction at the maximum half of its width. Further, holes move from the power generation layer 14A to the transparent conductive film 16A on the p-type Si (semiconductor film having p-type conductivity) 18A side, and this transparent conductive film 16A is moved to the end in the width direction at the maximum. The current is collected by the auxiliary electrode 17 </ b> A after moving by 1/2 of the width. Thereby, the generated electric power is extracted outside. For this reason, the voltage drop due to the resistance of the transparent conductive film 16A through which holes move is small and the loss is small. Therefore, a photoelectric conversion element having good conversion efficiency (conversion efficiency from light energy to electric energy) used for a solar cell or the like can be obtained.

  According to 2nd Embodiment which has such a structure, there exists an effect similar to the said 1st Embodiment.

Next, a method for manufacturing the photoelectric conversion element 10 and the photoelectric conversion module illustrated in FIG. 2 will be described.
1. A thin-line thin glass plate 10 is produced.
The manufacturing method is based on a general redraw method, a down draw method, a float method, a fusion method, or the like.
Next, the produced thin wire-like thin glass 10 is wound around a supply-side reel (not shown), and the thin glass 10 is placed on the take-up reel in a state where the end is fixed to the take-up reel (not shown). The following steps are continuously performed while winding.

2. The first transparent conductive film 12 is produced on the thin glass 10.
Various methods such as a thermal CVD method, a spray method, and a coating method can be used for producing the transparent conductive film 12.

3. The first auxiliary electrode 13 is produced.
Application / firing of metal-containing paste and partial film formation (sputtering, vapor deposition, CVD, etc.) can be used.

4). An insulating film 15 is formed so as to cover the first auxiliary electrode 13.
Solution coating / firing and partial film formation (sputtering, vapor deposition, CVD, etc.) can be used.

5). A power generation layer 14 having a pin structure or a pn structure that contributes to power generation is produced.
A laminated film is produced by various CVD, vapor deposition, sputtering and the like.

6). A second transparent conductive film 16 is formed on the power generation layer 14.
Various methods such as a thermal CVD method, a spray method, and a coating method can be used to manufacture the transparent conductive film 16.

7). A second auxiliary electrode 17 is produced.
Application / firing of metal-containing paste and partial film formation (sputtering, vapor deposition, CVD, etc.) can be used.
Thereby, the production of the photoelectric conversion element 10 shown in FIG. 2 is completed.

  The photoelectric conversion modules 1A and 1B shown in FIGS. 4 and 5 are manufactured by arranging the plurality of photoelectric conversion elements 10 thus manufactured and electrically connecting the adjacent photoelectric conversion elements 10 to each other.

  In this case, the cells are electrically connected in series or in parallel so as to obtain a design current value and a design voltage value. The connection is made by soldering, wire bonding, bonding to a template substrate, or the like.

  In this way, the photoelectric conversion modules 1A and 1B shown in FIGS. 4 and 5 are easily manufactured by arranging a plurality of photoelectric conversion elements 10 side by side and electrically connecting adjacent photoelectric conversion elements 10 to each other. be able to.

  According to the manufacturing method of the photoelectric conversion element 10 and the photoelectric conversion module as described above, the following effects can be obtained.

  Since the first transparent conductive film 12, the power generation layer 14 and the second transparent conductive film 16 formed on the thin wire-like thin glass 10 have a thin wire-like form like the thin wire-like thin glass 10, the device The first transparent conductive film 12, the power generation layer 14, and the second transparent conductive film 16 can be formed while maintaining uniformity. For this reason, the capital investment is reduced and the manufacturing cost can be reduced.

  ○ Since each of the above steps is continuously performed while winding the thin glass 10 on the winding side reel, the productivity is increased.

  ○ A photoelectric conversion module can be manufactured by arranging and electrically connecting a plurality of manufactured photoelectric conversion elements 10, so that valuable semiconductor materials such as Si are not wasted, and the amount of semiconductor materials such as Si used can be reduced. Can be reduced.

  Next, a method for manufacturing the photoelectric conversion element 10A and the photoelectric conversion module illustrated in FIG. 6 will be described.

1. A thin-line thin glass plate 10 is produced.
The manufacturing method is based on a general redraw method, a down draw method, a float method, a fusion method, or the like.
Next, the produced thin wire-like conductive substrate 11A is wound around a supply-side reel (not shown), and its end is fixed to the take-up reel (not shown), and the winding-side reel is electrically conductive. The following steps are continuously performed while winding the substrate 11A.

2. An insulating film 15A that covers both ends of the conductive substrate 11A is produced.
Solution coating / firing and partial film formation (sputtering, vapor deposition, CVD, etc.) can be used.

3. A power generation layer 14A having a pin structure or a pn structure that contributes to power generation is formed on the entire portion of the conductive substrate 11A excluding both ends.
A laminated film is produced by various CVD, vapor deposition, sputtering and the like.

4). A transparent conductive film 16A is produced so as to cover the entire surface of the power generation layer 14A.
Various methods such as a thermal CVD method, a spray method, and a coating method can be used for producing the transparent conductive film 16A.

5). An auxiliary electrode 17A that assists the transparent conductive film 16A is formed at both ends of the transparent conductive film 16A.
Application / firing of metal-containing paste and partial film formation (sputtering, vapor deposition, CVD, etc.) can be used.
Thereby, the production of the photoelectric conversion element 10 shown in FIG. 2 is completed.
A plurality of photoelectric conversion elements 10A produced in this way are arranged side by side, and adjacent photoelectric conversion elements 10A are electrically connected to produce a photoelectric conversion module.

  In this case, the cells are electrically connected in series or in parallel so as to obtain a design current value and a design voltage value. The connection is made by soldering, wire bonding, bonding to a template substrate, or the like.

  According to such a photoelectric conversion element 10A and a method for manufacturing a photoelectric conversion module, the following operational effects can be obtained.

  ○ Since the power generation layer 14A and the transparent conductive film 16A formed on the thin-line conductive substrate 11A have a thin-line shape like the thin-line conductive substrate 11A, without increasing the size of the apparatus, The power generation layer 14A and the transparent conductive film 16A can be formed while maintaining uniformity. For this reason, the capital investment is reduced and the manufacturing cost can be reduced.

  ○ Since the above steps are continuously performed while winding the conductive base material 11A on the winding side reel, the productivity is increased.

  ○ A photoelectric conversion module can be produced by arranging and electrically connecting a plurality of produced photoelectric conversion elements 10A, so that valuable semiconductor materials such as Si are not wasted, and the amount of semiconductor materials such as Si used can be reduced. Can be reduced.

  Next, modified examples of the photoelectric conversion element 10 according to the first embodiment will be described with reference to FIGS.

  The photoelectric conversion element 10 </ b> B illustrated in FIG. 8 includes a transparent conductive film 40 that covers the entire surface of the thin glass 11 and an opaque conductive film 41 that covers the entire surface of the power generation layer 14. The conductive film 41 is a metal thin film, for example. Other configurations are the same as those of the photoelectric conversion element 10 according to FIG.

  The photoelectric conversion element 10 </ b> C illustrated in FIG. 9 is formed at both ends of the transparent conductive film 40 that covers the entire surface of the thin glass 11, the opaque conductive film 41 that covers the entire surface of the power generation layer 14, and the transparent conductive film 40. And an auxiliary electrode 13.

  A photoelectric conversion element 10 </ b> D illustrated in FIG. 10 is obtained by providing auxiliary electrodes 43 at both ends of the conductive film 41 in the photoelectric conversion element 10 </ b> C illustrated in FIG. 9.

  Next, a modification of the photoelectric conversion element 10A according to the second embodiment will be described with reference to FIGS.

  A photoelectric conversion element 10E illustrated in FIG. 11 has a configuration without the auxiliary electrode 17A in the photoelectric conversion element 10A illustrated in FIG.

  A photoelectric conversion element 10F illustrated in FIG. 12 has a configuration in which a transparent conductive film 50 is provided between the thin wire-like conductive base material 11A and the power generation layer 14A in the photoelectric conversion element 10E illustrated in FIG. According to this configuration, since the mutual diffusion between the conductive base material 11A and the power generation layer 14A is suppressed by the transparent conductive film 50, a highly reliable and long-life photoelectric conversion element can be obtained.

  A photoelectric conversion element 10G illustrated in FIG. 13 has a configuration in which auxiliary electrodes 17A are provided at both ends of the transparent conductive film 16A in the photoelectric conversion element 10F illustrated in FIG.

  In addition, this invention can also be changed and embodied as follows.

  In the photoelectric conversion element 10 according to the first embodiment shown in FIG. 2 and FIG. 3, the case where the power generation layer 14 is configured by a semiconductor film having a pin structure has been described. The present invention can also be applied to a photoelectric conversion element including a semiconductor film having a pn structure of type Si. In this case, each of the p-type Si and n-type Si semiconductor films constituting the power generation layer 14 is made of polycrystalline silicon.

  The present invention can be applied to a photoelectric conversion element having the following configuration instead of the photoelectric conversion element 10A according to the fourth embodiment shown in FIG. That is, the photoelectric conversion element includes a thin linear conductive substrate 11A, a first transparent conductive film formed so as to cover the entire surface of the conductive substrate 11A, and both ends of the transparent conductive film. And a first auxiliary electrode provided to assist the transparent conductive film. The photoelectric conversion element further includes a power generation layer 14A formed on the entire portion of the first transparent conductive film except both ends, and an insulating film that covers both ends of the first transparent conductive film and the first auxiliary electrode. 15A, a second transparent conductive film (16A) covering the entire surface of the power generation layer 14A, and a second auxiliary electrode (17A) provided at both ends of the second transparent conductive film and assisting the transparent conductive film 16 Is provided.

The perspective view which shows the photoelectric conversion module which has a some photoelectric conversion element. It is sectional drawing which shows the photoelectric conversion element which concerns on 1st Embodiment, and is an expanded sectional view of the A section of FIG. Operation | movement explanatory drawing which expanded and showed a part of FIG. Sectional drawing which shows the photoelectric conversion module which concerns on 2nd Embodiment. Sectional drawing which shows the photoelectric conversion module which concerns on 3rd Embodiment. Sectional drawing which shows the photoelectric conversion element which concerns on 4th Embodiment. Operation | movement explanatory drawing which expanded and showed a part of FIG. Sectional drawing which shows the modification of the photoelectric conversion element which concerns on 1st Embodiment. Sectional drawing which shows another modification of the photoelectric conversion element which concerns on 1st Embodiment. Sectional drawing which shows another modification of the photoelectric conversion element which concerns on 1st Embodiment. Sectional drawing which shows the modification of the photoelectric conversion element which concerns on 4th Embodiment. Sectional drawing which shows another modification of the photoelectric conversion element which concerns on 4th Embodiment. Sectional drawing which shows another modification of the photoelectric conversion element which concerns on 4th Embodiment.

Explanation of symbols

1, 1A, 1B: photoelectric conversion modules 10, 10A, 10B, 10C, 10D, 10E, 10F, 10G: photoelectric conversion element 11: thin glass 11A: conductive substrate 12: first transparent conductive film 13: first Auxiliary electrodes 14, 14A: power generation layers 15, 15A: insulating film 16: second transparent conductive film 16A: transparent conductive film 17: second auxiliary electrode 17A: auxiliary electrodes 18, 18A: p-type Si
19, 198A: n-type Si
20, 20A: p-type Si
40, 50: transparent conductive film 41: conductive film 43: auxiliary electrode

Claims (23)

A band-shaped glass substrate having a width of 1 mm or more and 20 mm or less ;
A transparent conductive film formed so as to cover the entire surface of the glass substrate on the power generation layer side and the end surface of the substrate ;
A power generation layer composed of a semiconductor film having a pn structure or a pin structure formed on the entire portion of the transparent conductive film except for both ends on the long side ; and
An insulating film covering both ends on the long side of the transparent conductive film;
A conductive film covering the entire surface of the power generation layer opposite to the transparent conductive film ;
A photoelectric conversion element comprising: An auxiliary electrode is provided on an end surface portion on the long side of the transparent conductive film, and the insulating film is formed so as to cover both ends of the transparent conductive film and the auxiliary electrode. The photoelectric conversion element according to claim 1.   The photoelectric conversion element according to claim 2, wherein second auxiliary electrodes are provided at both ends of the conductive film covering the entire surface of the power generation layer. The photoelectric conversion element according to claim 3, wherein the conductive film is a transparent conductive film. The semiconductor film photoelectric conversion device according to any one of claims 1 to 4, characterized in that a silicon thin film. The photoelectric conversion element according to any one of claims 1 to 5 is arranged plurality of photoelectric conversion module, characterized in that the electrical connection between the two adjacent photoelectric conversion elements. The photoelectric conversion module according to claim 6 , wherein the plurality of photoelectric conversion elements are electrically connected in parallel between two adjacent photoelectric conversion elements. The photoelectric conversion module according to claim 6 , wherein the plurality of photoelectric conversion elements are electrically connected in series between two adjacent photoelectric conversion elements. A strip-shaped conductive substrate having a width of 1 mm to 20 mm ;
A power generation layer composed of a semiconductor film having a pn structure or a pin structure formed on the entire surface of the conductive base material except for both ends on the long side ; and
An insulating film covering both ends and end surfaces of the long side of the conductive substrate;
A transparent conductive film formed to cover the entire surface of the power generation layer opposite to the conductive substrate;
A photoelectric conversion element comprising: The photoelectric conversion element according to claim 9 , wherein an auxiliary electrode is provided on an end surface portion on a long side of the transparent conductive film. The photoelectric conversion element according to claim 9 , wherein a transparent conductive film is provided between the conductive substrate and the power generation layer. The photoelectric conversion element according to claim 9, wherein the semiconductor film is a silicon thin film. A photoelectric conversion module, wherein a plurality of the photoelectric conversion elements according to any one of claims 9 to 12 are arranged side by side and two adjacent photoelectric conversion elements are electrically connected. The photoelectric conversion module according to claim 13 , wherein the plurality of photoelectric conversion elements are electrically connected in parallel between two adjacent photoelectric conversion elements. The photoelectric conversion module according to claim 13 , wherein the plurality of photoelectric conversion elements are electrically connected in series between two adjacent photoelectric conversion elements. In a state in which a belt-shaped glass substrate having a width of 1 mm or more and 20 mm or less is wound around a supply-side reel, and an end thereof is fixed to the take-up-side reel,
Forming a transparent conductive film so as to cover the entire surface of the glass substrate on the power generation layer side and the end face of the substrate ;
Forming an insulating film covering both ends on the long side of the transparent conductive film;
Forming a power generation layer composed of a semiconductor film having a pn structure or a pin structure on the transparent conductive film;
Forming a conductive film covering the entire surface of the power generation layer opposite to the transparent conductive film ;
Is continuously performed while winding the glass substrate on the winding-side reel. In a state in which a belt-shaped glass substrate having a width of 1 mm or more and 20 mm or less is wound around a supply-side reel, and an end thereof is fixed to the take-up-side reel,
Forming a transparent conductive film so as to cover the entire surface of the glass substrate on the power generation layer side and the end face of the substrate ;
Forming an auxiliary electrode on the end surface portion on the long side of the transparent conductive film;
Forming an insulating film covering both ends on the long side of the transparent conductive film and the auxiliary electrode;
Forming a power generation layer composed of a semiconductor film having a pn structure or a pin structure on the transparent conductive film;
Forming a conductive film covering the entire surface of the power generation layer opposite to the transparent conductive film ;
Is continuously performed while winding the glass substrate on the winding-side reel. In a state in which a belt-shaped glass substrate having a width of 1 mm or more and 20 mm or less is wound around a supply-side reel, and an end thereof is fixed to the take-up-side reel,
Forming a transparent conductive film so as to cover the entire surface of the glass substrate on the power generation layer side and the end face of the substrate ;
Forming a first auxiliary electrode on an end surface portion on the long side of the transparent conductive film;
Forming an insulating film covering both ends on the long side of the transparent conductive film and the first auxiliary electrode;
Forming a power generation layer composed of a semiconductor film having a pn structure or a pin structure on the transparent conductive film;
Forming a conductive film covering the entire surface of the power generation layer opposite to the transparent conductive film ;
Forming a second auxiliary electrode at both ends on the long side of the conductive film;
Is continuously performed while winding the glass substrate on the winding-side reel. In a state in which a belt-shaped glass substrate having a width of 1 mm or more and 20 mm or less is wound around a supply-side reel, and an end thereof is fixed to the take-up-side reel,
Forming a transparent conductive film so as to cover the entire surface of the glass substrate on the power generation layer side and the end face of the substrate ;
Forming a first auxiliary electrode on an end surface portion on the long side of the transparent conductive film;
Forming an insulating film covering both ends on the long side of the transparent conductive film and the first auxiliary electrode;
Forming a power generation layer composed of a semiconductor film having a pn structure or a pin structure on the transparent conductive film;
Forming a second transparent conductive film covering the entire surface of the power generation layer opposite to the transparent conductive film;
Forming a second auxiliary electrode at both ends on the long side of the second transparent conductive film;
Is continuously performed while winding the glass substrate on the winding-side reel. In a state where a belt-shaped conductive substrate having a width of 1 mm or more and 20 mm or less is wound around a supply-side reel, and an end thereof is fixed to the take-up-side reel,
Forming an insulating film that covers both ends and end faces of the long side of the conductive substrate;
Forming a power generation layer composed of a semiconductor film having a pn structure or a pin structure on the conductive substrate;
Forming a transparent conductive film covering the entire surface of the power generation layer opposite to the transparent conductive film;
Is continuously performed while winding the conductive base material on the winding-side reel. In a state where a belt-shaped conductive substrate having a width of 1 mm or more and 20 mm or less is wound around a supply-side reel, and an end thereof is fixed to the take-up-side reel,
Forming an insulating film that covers both ends and end faces of the long side of the conductive substrate;
Forming a power generation layer composed of a semiconductor film having a pn structure or a pin structure on the conductive substrate;
Forming a transparent conductive film covering the entire surface of the power generation layer opposite to the conductive substrate;
Forming auxiliary electrodes at both ends on the long side of the transparent conductive film;
Is continuously performed while winding the conductive base material on the winding-side reel. In a state where a belt-shaped conductive substrate having a width of 1 mm or more and 20 mm or less is wound around a supply-side reel, and an end thereof is fixed to the take-up-side reel,
Forming a first transparent conductive film on the surface of the conductive substrate on the power generation layer side ;
Forming an insulating film that covers both ends of the long side of the conductive substrate , an end face, and a part of the first transparent conductive film;
Forming a power generation layer composed of a semiconductor film having a pn structure or a pin structure on the conductive substrate;
Forming a second transparent conductive film covering the entire surface of the power generation layer opposite to the first transparent conductive film ;
Is continuously performed while winding the conductive base material on the winding-side reel. In a state where a belt-shaped conductive substrate having a width of 1 mm or more and 20 mm or less is wound around a supply-side reel, and an end thereof is fixed to the take-up-side reel,
Forming a first transparent conductive film on the surface of the conductive substrate on the power generation layer side ;
Forming an insulating film that covers both ends of the long side of the conductive substrate , an end face, and a part of the first transparent conductive film;
Forming a power generation layer composed of a semiconductor film having a pn structure or a pin structure on the conductive substrate;
Forming a second transparent conductive film covering the entire surface of the power generation layer opposite to the first transparent conductive film ;
Forming auxiliary electrodes on both ends of the transparent conductive film;
Is continuously performed while winding the conductive base material on the winding-side reel.

Images