JP5120950B2 - Magnetic thin film element - Google Patents
Magnetic thin film element Download PDFInfo
- Publication number
- JP5120950B2 JP5120950B2 JP2008219619A JP2008219619A JP5120950B2 JP 5120950 B2 JP5120950 B2 JP 5120950B2 JP 2008219619 A JP2008219619 A JP 2008219619A JP 2008219619 A JP2008219619 A JP 2008219619A JP 5120950 B2 JP5120950 B2 JP 5120950B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thin film
- metal layer
- ferromagnetic metal
- cfas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
本発明は、基材上に強磁性金属層、常磁性金属層及び強磁性金属層の３層構造を持つ薄膜が設けてある磁性薄膜素子に関する。 The present invention relates to a magnetic thin film element in which a thin film having a three-layer structure of a ferromagnetic metal layer, a paramagnetic metal layer, and a ferromagnetic metal layer is provided on a substrate.
強磁性金属／常磁性金属／強磁性金属の３層構造を持つ薄膜の面直方向磁気抵抗効果（ＣＰＰ−ＧＭＲ）を利用した磁性薄膜素子は、高性能読み出し磁気ヘッド用として期待されている。高性能化のためには低い抵抗値と高い磁気抵抗変化率を実現させる必要がある。
Ｂ２型あるいはＬ２１型規則構造のホイスラー合金ＣＦＡＳを用い [００１]方向が膜面に垂直になるような結晶方位でエピタキシャル成長させたＣＦＡＳ／ＭｇＯ／ＣＦＡＳ ３層構造膜は、ＣＦＡＳが高いスピン偏極度を持ち、膜面垂直方向に大きなトンネル磁気抵抗効果を示すことが非特許文献１により知られている。ＭｇＯの代わりに金属を用いることによって、電気抵抗値を下げることが期待される。同じく非特許文献１においてＣｒとＣＦＡＳがエピタキシャル成長することは知られているが、この組み合わせによる大きな膜面垂直方向磁気抵抗効果は得られていない。
また、別のＬ２１型規則構造を持ったホイスラー合金Ｃｏ２ＭｎＳｉ（ＣＭＳ）を用い、ＣＭＳを、ＣＭＳ／Ｃｒ／ＣＭＳを[００１]方向が膜面に垂直になるような結晶方位でエピタキシャル成長させた３層構造による膜面垂直磁気抵抗効果が非特許文献２に報告されているが、電気抵抗×面積の値が０．７９Ω・μｍ２と高く磁気抵抗変化率も２．４％と低い値にとどまっている。
ホイスラー合金を用いたＣＰＰ−ＧＭＲ素子は特許文献１に記述されているが、組成や結晶方位に関する詳細な記述はない。
別のホイスラー合金Ｃｏ２ＭｎＧｅ（ＣＭＧ）を用い、ＣＭＧ/Ｃｕ/ＣＭＧの３層構造によるＣＰＰ−ＧＭＲが特許文献２に記載されている。ただしこの文献ではＣＭＧは［１１０］方向が膜面に垂直になるような優先配向をしているが全く規則構造を取っていない。
別の組成のホイスラー合金を用いたＣＰＰ−ＧＭＲが特許文献３に記載されている。この場合もホイスラー合金の詳細な結晶構造に関する記載はなく、不規則相の多結晶体であると推測される。
電気抵抗×面積が０．３Ω・μｍ２以下、かつ磁気抵抗変化率が５％以上となることが求められる。
A magnetic thin film element using the perpendicular magnetoresistance effect (CPP-GMR) of a thin film having a three-layer structure of ferromagnetic metal / paramagnetic metal / ferromagnetic metal is expected for a high-performance read magnetic head. For high performance, it is necessary to realize a low resistance value and a high magnetoresistance change rate.
A CFAS / MgO / CFAS three-layer structure film epitaxially grown in a crystal orientation such that the [001] direction is perpendicular to the film surface using a B2-type or L21-type ordered Heusler alloy CFAS has a high spin polarization of CFAS. It is known from Non-Patent Document 1 that it has a large tunnel magnetoresistance effect in the direction perpendicular to the film surface. It is expected that the electric resistance value is lowered by using a metal instead of MgO. Similarly, it is known in Non-Patent Document 1 that Cr and CFAS are epitaxially grown, but a large film surface perpendicular magnetoresistance effect by this combination is not obtained.
In addition, Heusler alloy Co 2 MnSi (CMS) having another L21 type ordered structure was used, and CMS was epitaxially grown in a crystal orientation such that the [001] direction was perpendicular to the film surface. The film surface perpendicular magnetoresistive effect due to the three-layer structure is reported in Non-Patent Document 2, but the value of electric resistance × area is as high as 0.79 Ω · μm 2 and the magnetoresistance change rate is also as low as 2.4%. It stays.
A CPP-GMR element using a Heusler alloy is described in Patent Document 1, but there is no detailed description regarding the composition and crystal orientation.
Patent Document 2 describes CPP-GMR using a three-layer structure of CMG / Cu / CMG using another Heusler alloy Co 2 MnGe (CMG). However, in this document, CMG is preferentially oriented such that the [110] direction is perpendicular to the film surface, but does not take a regular structure at all.
Patent Document 3 describes CPP-GMR using a Heusler alloy having another composition. In this case as well, there is no description about the detailed crystal structure of the Heusler alloy, and it is assumed that it is a disordered polycrystalline body.
It is required that the electric resistance × area is 0.3Ω · μm 2 or less and the magnetoresistance change rate is 5% or more.
＜非特許文献１＞ Ｊａｐａｎｅｓｅ Ｊｏｕｒｎａｌ ｏｆ Ａｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ， Ｖｏｌ． ４６， Ｎｏ． １９， ２００７／５／１１． Ｎ． Ｔｅｚｕｋａ， Ｎ． Ｉｋｅｄａ， Ｓ． Ｓｕｇｉｍｏｔｏ， Ｋ． Ｉｎｏｍａｔａ．
＜非特許文献２＞ Ａｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ Ｌｅｔｔｅｒｓ， Ｖｏｌ． ８８， ２２２５０４．２００６／５／３０ Ｋ． Ｙａｋｕｓｈｉｊｉ， Ｋ． Ｓａｉｔｏ， Ｓ． Ｍｉｔａｎｉ， Ｋ． Ｔａｋａｎａｓｈｉ， Ｙ． Ｋ． Ｔａｋａｈａｓｈｉ， Ｋ． Ｈｏｎｏ
＜非特許文献３＞ Ｊｏｕｒｎａｌ ｏｆ Ａｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ Ｖｏｌ．１０２，Ｉｓｓｕｅ ４， Ａｒｔｉｃｌｅ Ｎｕｍｂｅｒ ０４３９０３，Ｓ．Ｖ．Ｋａｒｔｈｉｋ， Ａ．Ｒａｊａｎｉｋａｎｔｈ， Ｔ．Ｍ．Ｎａｋａｔａｎｉ， Ｚ．Ｇｅｒｃｓｉ， Ｙ．Ｋ．Ｔａｋａｈａｓｈｉ， Ｔ．Ｆｕｒｕｂａｙａｓｈｉ， Ｋ．Ｉｎｏｍａｔａ， Ｋ．Ｈｏｎｏ．
＜非特許文献４＞ Ｐｈｙｓｉｃａｌ Ｒｅｖｉｅｗ Ｂ Ｖｏｌ．６６，ｐ．１７４４２９， Ｉ．Ｇａｌａｎａｋｉｓ， Ｐ．Ｈ．Ｄｅｄｒｉｃｈｓ， Ｎ．Ｐａｐａｎｉｋｏｐａｏｕ．
＜特許文献１＞ 特開２００３−２１８４２８
＜特許文献２＞ 特開２００５−１１６７０１
＜特許文献３＞ 特開２００７−８１１２６
<Non-Patent Document 1> Japan Journal of Applied Physics, Vol. 46, no. 19, 2007/5/11. N. Tezuka, N.A. Ikeda, S .; Sugimoto, K. et al. Inomata.
<Non-Patent Document 2> Applied Physics Letters, Vol. 88, 222504.2006 / 5/30 K.K. Yakushiji, K. et al. Saito, S .; Mitani, K.M. Takanashi, Y. et al. K. Takahashi, K .; Hono
<Non-Patent Document 3> Journal of Applied Physics Vol. 102, Issue 4, Article Number 043903, S.E. V. Karthik, A.A. Rajanikanth, T .; M.M. Nakatani, Z .; Gercsi, Y. et al. K. Takahashi, T .; Furubayashi, K. et al. Inomata, K .; Hono.
<Non-Patent Document 4> Physical Review B Vol. 66, p. 174429, I.I. Galanakis, P.A. H. Dedrichs, N.D. Papanikopaou.
<Patent Document 1> JP2003-218428A
<Patent Document 2> JP-A-2005-116701
<Patent Document 3> JP2007-81126A
本発明はこのような実情に鑑み、従来不可能とされていた電気抵抗×面積が０．３Ω・μｍ２、かつ磁気抵抗変化率が５％以上となる磁性薄膜素子を提供することを目的とする。
また、Ｂ２型あるいはＬ２１型規則構造のホイスラー合金を[００１]方向が膜面に垂直になるような結晶方位でエピタキシャル成長させた薄膜を用いて、低い抵抗値と高い磁気抵抗変化率をもったＣＰＰ−ＧＭＲ素子を作ることを目的とする。
In view of such circumstances, the present invention has an object to provide a magnetic thin film element having an electric resistance × area of 0.3 Ω · μm 2 , which has been impossible in the past, and a magnetoresistance change rate of 5% or more. To do.
Further, a CPP having a low resistance value and a high magnetoresistance change rate using a thin film obtained by epitaxially growing a Heusler alloy having a B2 type or L21 type ordered structure in a crystal orientation in which the [001] direction is perpendicular to the film surface. -To make a GMR element.
発明１の磁性薄膜素子は、基材上に強磁性金属層、常磁性金属層及び強磁性金属層の３層構造を持つ薄膜が設けてある磁性薄膜素子であって、少なくとも強磁性金属層と基材との間に、前記強磁性金属層の下地層として、面心立方格子の構造を持ち、かつ前記強磁性金属層よりも低い電気抵抗である金属からなる層が設けてあり、前記強磁性金属層は組成式Ｃｏ ２ ＦｅＡｌ ｘ Ｓｉ １−ｘ （ＣＦＡＳ）で表される層であって、当該ＣＦＡＳ層は、エピタキシャル成長され、結晶方位が［００１］方向に揃ったものであることを特徴とする。
発明２は、発明１の磁性薄膜素子において、前記ＣＦＡＳ層は、組成式Ｃｏ ２ ＦｅＡｌ ０．５ Ｓｉ ０．５ で表される層であることを特徴とする。
The magnetic thin film element of the invention 1 is a magnetic thin film element in which a thin film having a three-layer structure of a ferromagnetic metal layer, a paramagnetic metal layer and a ferromagnetic metal layer is provided on a substrate, and at least the ferromagnetic metal layer and A layer made of a metal having a face-centered cubic lattice structure and having an electric resistance lower than that of the ferromagnetic metal layer is provided as an underlayer of the ferromagnetic metal layer between the substrate and the strong metal layer. The magnetic metal layer is a layer represented by a composition formula Co 2 FeAl x Si 1-x (CFAS), and the CFAS layer is epitaxially grown and has a crystal orientation aligned in the [001] direction. And
Invention 2 is the magnetic thin film element of Invention 1, wherein the CFAS layer is a layer represented by a composition formula Co 2 FeAl 0.5 Si 0.5 .
発明３の磁性薄膜素子は、基材上に強磁性金属層、常磁性金属層及び強磁性金属層の３層構造を持つ薄膜が設けてある磁性薄膜素子であって、少なくとも前記強磁性金属層と前記基材との間に、前記強磁性金属層の下地層として、面心立方格子の構造を持ち、かつ前記強磁性金属層よりも低い電気抵抗である金属からなる層が設けてあり、前記強磁性金属層は組成式Ｃｏ ２ ＭｎＳｉ（ＣＭＳ）で表される層であって、当該ＣＭＳ層は、エピタキシャル成長され、結晶方位が［００１］方向に揃ったものであることを特徴とする。
A magnetic thin film element according to a third aspect of the present invention is a magnetic thin film element in which a thin film having a three-layer structure of a ferromagnetic metal layer, a paramagnetic metal layer, and a ferromagnetic metal layer is provided on a substrate, and at least the ferromagnetic metal layer And a layer made of a metal having a face-centered cubic lattice structure and an electric resistance lower than that of the ferromagnetic metal layer, as an underlayer of the ferromagnetic metal layer , The ferromagnetic metal layer is a layer represented by a composition formula Co 2 MnSi (CMS), and the CMS layer is epitaxially grown and has a crystal orientation aligned in the [001] direction .
発明４は、発明１乃至３の何れか１の磁性薄膜素子において、前記基材は、ＭｇＯからなることを特徴とする。
発明５は、発明１乃至４の何れか１の磁性薄膜素子において、前記常磁性金属層が面心立方格子の構造を持ち、かつ前記強磁性金属層よりも低い電気抵抗である金属からなる層であることを特徴とする。
A fourth aspect of the present invention is the magnetic thin film element according to any one of the first to third aspects, wherein the substrate is made of MgO.
A fifth aspect of the present invention is the magnetic thin film element according to any one of the first to fourth aspects, wherein the paramagnetic metal layer has a face-centered cubic lattice structure and is made of a metal having a lower electric resistance than the ferromagnetic metal layer. It is characterized by being.
本発明では、低い抵抗値をもったＣＰＰ−ＧＭＲ素子を構成するために低い電気抵抗率を持った材料が好ましい。また、ホイスラー合金との積層膜を作成した場合に良好なエピタキシャル成長を実現させるために、面心立方格子の構造を取ることが好ましいことを見出し、上記発明に至った。
その結果、電気抵抗×面積が０．３Ω・μｍ２以下、かつ磁気抵抗変化率が５％以上となる磁性薄膜素子を実現するに至ったものである。
In the present invention, a material having a low electrical resistivity is preferable for constituting a CPP-GMR element having a low resistance value. Moreover, in order to implement | achieve favorable epitaxial growth when producing a laminated film with a Heusler alloy, it discovered that it was preferable to take the structure of a face centered cubic lattice, and came to the said invention.
As a result, a magnetic thin film element having an electric resistance × area of 0.3Ω · μm 2 or less and a magnetoresistance change rate of 5% or more has been realized.
下記実施例による知見として、ＭｇＯ基材上にＡｇをバッファ層とすることにより、ホイスラー合金Ｃｏ２ＦｅＡｌｘＳｉ1-ｘ（ＣＦＡＳ）（ｘ＝0.5）がエピタキシャル成長することを見いだした。
次に、両側の強磁性金属としてＣＦＡＳを、常磁性金属スペーサ層としてＡｇを用いた面直方向磁気抵抗効果素子を作成し、高い磁気抗効果が得られることを見いだした。また、薄膜を成長させるための下地層にもＡｇを用いることにより低い抵抗値を実現している。
ＣＦＡＳは高いスピン偏極率を持つことが知られているが、エピタキシャル成長させることにより高い結晶規則度を持たせることが望ましい。そのための下地層としてはＣｒが知られているが、抵抗が高いという欠点がある。本発明では、Ａｇが低抵抗とエピタキシャル成長を兼ね備える金属であることを見いだした。
また、強磁性金属層として別のホイスラー合金、Ｃｏ２ＭｎＳｉ（ＣＭＳ）を、常磁性金属層としてＡｇあるいはＣｕを用いた素子においても、下地層にＡｇを用いることにより低い抵抗値と高い磁気抵抗変化率が得られた。
これらの知見に基づき、下地層および常磁性金属層を構成する材料としては、低い抵抗値をもったＣＰＰ−ＧＭＲ素子を構成するために低い電気抵抗率を持った材料が好ましい。また、ホイスラー合金との積層膜を作成した場合に良好なエピタキシャル成長を実現させるために、面心立方格子の構造を持つことが好ましく、より好ましくはその格子定数ａが３．５ｎｍから４．２ｎｍの範囲にあることを知るに至った。そして、このような材料としては、Ａｇ（電気抵抗率 ρ＝１．６μΩｃｍ, ａ＝４．０９ｎｍ），Ｃｕ（ρ＝１．６μΩｃｍ, ａ＝３．６１ｎｍ），Ａｕ（ρ＝２．２μΩｃｍ, ａ＝４．０８ｎｍ），及びＡｌ（ρ＝２．７μΩｃｍ, ａ＝４．０５ｎｍ）があげられる。これらの材料を下地層または常磁性金属層に用いることにより良好な効果を発揮すると予測される。また、これらの金属からなる合金も面心立方格子の構造を保つ限り同様の効果を発揮すると推測される。
下地層の厚さは1ｎｍ以上であればよい。それ以下の膜厚では基材が一様に下地層に覆われなくなる恐れがあり、その結果としてエピタキシャル成長がなされない可能性がある。
As a result of the following example, it was found that Heusler alloy Co 2 FeAl x Si 1-x (CFAS) (x = 0.5) grows epitaxially by using Ag as a buffer layer on the MgO substrate.
Next, a perpendicular magnetoresistive effect element using CFAS as a ferromagnetic metal on both sides and Ag as a paramagnetic metal spacer layer was prepared, and it was found that a high magnetoresistance effect was obtained. Also, a low resistance value is realized by using Ag for the underlayer for growing the thin film.
CFAS is known to have a high spin polarization, but it is desirable to have a high degree of crystal order by epitaxial growth. For this purpose, Cr is known as an underlayer, but has a drawback of high resistance. In the present invention, it has been found that Ag is a metal having both low resistance and epitaxial growth.
Further, even in an element using another Heusler alloy, Co 2 MnSi (CMS) as the ferromagnetic metal layer and Ag or Cu as the paramagnetic metal layer, low resistance and high magnetic resistance can be obtained by using Ag for the underlayer. The rate of change was obtained.
Based on these findings, the material constituting the underlayer and the paramagnetic metal layer is preferably a material having a low electrical resistivity in order to constitute a CPP-GMR element having a low resistance value. In order to realize good epitaxial growth when a laminated film with Heusler alloy is formed, it is preferable to have a face-centered cubic lattice structure, and more preferably, the lattice constant a is 3.5 nm to 4.2 nm. I came to know that it was in range. As such a material, Ag (electric resistivity ρ = 1.6 μΩcm, a = 4.09 nm), Cu (ρ = 1.6 μΩcm, a = 3.61 nm), Au (ρ = 2.2 μΩcm, a = 4.08 nm) and Al (ρ = 2.7 μΩcm, a = 4.05 nm). By using these materials for the underlayer or the paramagnetic metal layer, it is expected that a good effect is exhibited. In addition, it is presumed that an alloy composed of these metals also exhibits the same effect as long as the face-centered cubic lattice structure is maintained.
The thickness of the underlayer may be 1 nm or more. If the thickness is less than that, the substrate may not be uniformly covered by the underlayer, and as a result, epitaxial growth may not be performed.
ＣＦＡＳについてｘ＝0.5の場合を実施例に示したが、ｘの範囲は0≦ｘ≦１のものでも同様な効果を発揮し得るものである。下記実施例に示すように、ホイスラー合金、ＣＦＡＳ以外のホイスラー合金Ｃｏ２ＭｎＳｉ（ＣＭＳ）、を強磁性金属層とする場合にでも、同様な効果を発揮しえるものである。非特許文献３にはホイスラー合金、Ｃｏ２ＣｒｘＦｅ１−ｘＳｉが高いスピン分極率を示すことが記述されており、この合金を強磁性金属層に用いることにより同様の効果が期待される。また、これらにかぎらず強磁性金属相としては種々のホイスラー合金が利用可能である。非特許文献４に示されている理論的にスピン偏極度が高いと予測されるホイスラー合金、すなわちＸ２ＹＺの組成（ＸはＭｎ，Ｆｅ，Ｃｏ，Ｒｕ，Ｒｈのうちから選択した１種または２種以上の元素、ＹはＶ，Ｃｒ，Ｍｎ，Ｆｅのうちから選択した１種または２種以上の元素、ＺはＡｌ，Ｓｉ，Ｇａ，Ｇｅ，Ｓｎ，Ｓｂうちから選択した１種または２種以上の元素）の合金が利用可能であり、本発明の手法を適用することにより、同様の効果を得られる物と推測される。 Although the case of x = 0.5 for CFAS is shown in the examples, even if the range of x is 0 ≦ x ≦ 1, the same effect can be exhibited. As shown in the following examples, even when a Heusler alloy or Heusler alloy Co 2 MnSi (CMS) other than CFAS is used as a ferromagnetic metal layer, the same effect can be exhibited. Non-Patent Document 3 describes that a Heusler alloy, Co 2 Cr x Fe 1-x Si, exhibits a high spin polarizability, and a similar effect is expected by using this alloy for a ferromagnetic metal layer. . In addition to these, various Heusler alloys can be used as the ferromagnetic metal phase. The Heusler alloy theoretically predicted to have a high spin polarization shown in Non-Patent Document 4, that is, the composition of X 2 YZ (where X is one selected from Mn, Fe, Co, Ru, Rh or Two or more elements, Y is one or more elements selected from V, Cr, Mn, and Fe, Z is one or two elements selected from Al, Si, Ga, Ge, Sn, and Sb It is presumed that the same effect can be obtained by applying the method of the present invention.
実施例では、ＭｇＯの基材を用いたものを例示したが、その他のSi、SiO2、GaAs等の基材上にMgO薄膜をスパッタあるいは蒸着によって［００１］方位が面に垂直に配向するように付着させた物を用いても、同様にＡｇを介してホイスラー合金を［００１］方位に配向させた薄膜を作成することが出来ると予測されるので、同様な結果を得ることが期待できる。 In the embodiment, an example using an MgO base material is illustrated, but an MgO thin film is sputtered or deposited on another base material such as Si, SiO2, or GaAs so that the [001] orientation is oriented perpendicular to the surface. Even if the adhered material is used, it is expected that a thin film in which the Heusler alloy is oriented in the [001] direction can be similarly produced through Ag, and therefore, a similar result can be expected.
実施例では薄膜の作成法としてヘリコン波スパッタ方を用いているが、作成法はこれに限る物ではない。マグネトロンスパッタ方等他の方式のスパッタ方、あるいは電子ビーム加熱や抵抗加熱等による蒸着法によっても同様の薄膜の作成は可能であり、同様の効果を得られる物と推測される。
なお以下の℃は、５０℃単位での表示である。
In the embodiment, the helicon wave sputtering method is used as a method for forming a thin film, but the method for forming the thin film is not limited to this. A similar thin film can be formed by other types of sputtering methods such as magnetron sputtering or evaporation methods such as electron beam heating or resistance heating, and it is assumed that the same effect can be obtained.
Note that the following ° C. is indicated in units of 50 ° C.
・本実施例は、実施例２から４に示す磁気抵抗効果を得る前に、規則度の高いＢ２相のＣＦＡＳ層がAgを下地層として［００１］方向にエピタキシャル成長することを確認した物である。
・ヘリコン波スパッタ装置よって成膜
・表１にスパッタ条件を示す。
・図１に示すように、 ＭｇＯ単結晶基材上に下からＣｒ（３０）／Ａｇ（３０）／ＣＦＡＳ（３０）／Ｒｕ（３）
数字はそれぞれの膜厚（単位：ｎｍ）
ＣＦＡＳはＣｏ２ＦｅＡｌ０．５Ｓｉ０．５の組成のホイスラー合金を示す
・図２に示すように、Ｃｒ、Ａｇ、ＣＦＡＳが、すべて結晶方位が ［００１］ 方向に揃ったエピタキシャル成長を示し、結晶構造が規則度の高いＢ２構造であることであることがＸ線回折によって示された。
表１は実施例１の薄膜の作成条件を指し示す
In this example, before obtaining the magnetoresistance effect shown in Examples 2 to 4, it was confirmed that a highly ordered B2 phase CFAS layer was epitaxially grown in the [001] direction using Ag as a base layer. .
・ Film formation by helicon wave sputtering equipment ・ Table 1 shows sputtering conditions.
As shown in FIG. 1, Cr (30) / Ag (30) / CFAS (30) / Ru (3) from below on the MgO single crystal substrate
Numbers are for each film thickness (unit: nm)
CFAS indicates a Heusler alloy with a composition of Co 2 FeAl 0.5 Si 0.5 . As shown in FIG. 2, Cr, Ag, and CFAS all exhibit epitaxial growth in which the crystal orientation is aligned in the [001] direction. X-ray diffraction shows that the structure is a highly ordered B2 structure.
Table 1 indicates the conditions for forming the thin film of Example 1.
・ヘリコン波スパッタ装置よって成膜
・表２にスパッタ条件を示す。
・図３に示すように、ＭｇＯ単結晶基材上に下から Ｃｒ（１０）／Ａｇ（６０）／ＣＦＡＳ（２０）／ Ａｇ（５）／ＣＦＡＳ（５）／ＣｏＦｅ（２）／ＩｒＭｎ（１０）／Ｒｕ（８） の構造で、数字はそれぞれの膜厚（単位：ｎｍ）である。
ＣＦＡＳはＣｏ２ＦｅＡｌ０．５Ｓｉ０．５の組成のホイスラー合金を示す
ＣｏＦｅはＣｏ０．７５Ｆｅ０．２５の組成の合金、ＩｒＭｎはＩｒ０．２２Ｍｎ０．７８の組成の合金を表す。
・結晶構造の規則性の向上のため、下部ＣＦＡＳ層成膜直後に４００℃で熱処理を加えた。
・図４の電子顕微鏡写真からわかるように、Ｃｒ、Ａｇ、ＣＦＡＳが、すべて結晶方位が ［００１］ 方向に揃ったエピタキシャル成長をすることが示された。
・下部ＣＦＡＳ層は規則度の高いＢ２構造、上部ＣＦＡＳ層は規則度の低いＡ２構造となることがわかった。
・成膜後に電子線リソグラフィー、Ａｒイオンエッチング、により０．７μｍ×０．３μｍの大きさに微細加工。絶縁体ＳｉＯ２とＣｕ上部電極をスパッタによって作成し、図５に示すような面直方向磁気抵抗効果素子を作成した。
・上部ＣＦＡＳ層に交換磁気異方性を付与するため、膜面内のＭｇＯ（１００）の方向に５ｋＯｅの磁場を加えながら２５０℃、１時間の磁場中熱処理を加えた。
・磁気抵抗の測定は、前述の磁場中熱処理の場合と同じ方向に加える磁場を変化させながら、直流４端子法によって電気抵抗を測定することによって行った。
・磁気抵抗を測定した結果を図６に示す。面積あたり電気抵抗、ＲＡ＝０．１３９Ω・μｍ２室温で３．９％の磁気抵抗変化率を得た。
表２は実施例２に示す薄膜の作成条件を指し示す。
・ Film formation by helicon wave sputtering equipment ・ Table 2 shows sputtering conditions.
As shown in FIG. 3 , Cr (10) / Ag (60) / CFAS (20) / Ag (5) / CFAS (5) / CoFe (2) / IrMn (10 ) / Ru (8) and the numbers are the respective film thicknesses (unit: nm) .
CFAS represents a Heusler alloy with a composition of Co 2 FeAl 0.5 Si 0.5 CoFe represents an alloy with a composition of Co 0.75 Fe 0.25 , IrMn represents an alloy with a composition of Ir 0.22 Mn 0.78 .
In order to improve the regularity of the crystal structure, a heat treatment was performed at 400 ° C. immediately after the formation of the lower CFAS layer.
As shown in the electron micrograph of FIG. 4, it was shown that Cr, Ag, and CFAS all grow epitaxially with the crystal orientation aligned in the [001] direction.
It has been found that the lower CFAS layer has a highly ordered B2 structure, and the upper CFAS layer has a low ordered A2 structure.
・ After film formation, fine processing to a size of 0.7 μm × 0.3 μm by electron beam lithography and Ar ion etching. Insulator SiO2 and Cu upper electrode were prepared by sputtering to produce a perpendicular magnetoresistive element as shown in FIG.
In order to impart exchange magnetic anisotropy to the upper CFAS layer, a heat treatment was performed in a magnetic field at 250 ° C. for 1 hour while applying a magnetic field of 5 kOe in the direction of MgO (100) in the film surface.
The measurement of the magnetic resistance was performed by measuring the electric resistance by the direct current four-terminal method while changing the magnetic field applied in the same direction as in the case of the above-described heat treatment in a magnetic field.
-The result of measuring the magnetic resistance is shown in FIG. Electrical resistance per area, RA = 0.139Ω · μm 2 A magnetoresistance change rate of 3.9% was obtained at room temperature.
Table 2 indicates the conditions for forming the thin film shown in Example 2 .
・ヘリコン波スパッタ装置よって成膜
・表３にスパッタ条件を示す。
・ＭｇＯ単結晶基材上に下から Ｃｒ（１０）／Ａｇ（６０）／ＣＦＡＳ（２０）／ Ａｇ（１０）／ＣＦＡＳ（５）／ＣｏＦｅ（２）／ＩｒＭｎ（１０）／Ｒｕ（８） の構造 （図３）
数字はそれぞれの膜厚（単位：ｎｍ）
ＣＦＡＳはＣｏ２ＦｅＡｌ０．５Ｓｉ０．５の組成のホイスラー合金を示す
ＣｏＦｅはＣｏ０．７５Ｆｅ０．２５ の組成の合金、ＩｒＭｎはＩｒ０．２２Ｍｎ０．７８ の組成の合金を表す。
・結晶構造の規則性の向上のため、下部ＣＦＡＳ層成膜直後、及び上部ＣＦＡＳ層成膜直後に４００℃で熱処理を加えた。
・実施例２と同様に、成膜後に電子線リソグラフィー、Ａｒイオンエッチング、により０．７μｍ×０．３μｍの大きさに微細加工。絶縁体ＳｉＯ２とＣｕ上部電極をスパッタによって作成し、面直方向磁気抵抗効果素子を作成した。
・実施例２と同じ条件で磁場中熱処理を行い、同様の方法で磁気抵抗を測定した。
・磁気抵抗を測定した結果を図７に示す。面積あたり電気抵抗、ＲＡ＝０．１３８Ω・μｍ２ 室温で５．４％の磁気抵抗変化率を得た。
表３は実施例３に示す薄膜の作成条件を指し示す
・ Film formation by helicon wave sputtering equipment ・ Table 3 shows sputtering conditions.
From the bottom on the MgO single crystal substrate Cr (10) / Ag (60) / CFAS (20) / Ag (10) / CFAS (5) / CoFe (2) / IrMn (10) / Ru (8) Structure (Fig. 3)
Numbers are for each film thickness (unit: nm)
CFAS represents a Heusler alloy with a composition of Co 2 FeAl 0.5 Si 0.5 CoFe represents an alloy with a composition of Co 0.75 Fe 0.25 , IrMn represents an alloy with a composition of Ir 0.22 Mn 0.78 .
In order to improve the regularity of the crystal structure, heat treatment was performed at 400 ° C. immediately after the lower CFAS layer was formed and immediately after the upper CFAS layer was formed.
As in Example 2, after film formation, fine processing to 0.7 μm × 0.3 μm by electron beam lithography and Ar ion etching. An insulator SiO 2 and a Cu upper electrode were formed by sputtering to produce a perpendicular magnetoresistive element.
A heat treatment in a magnetic field was performed under the same conditions as in Example 2, and the magnetoresistance was measured by the same method.
-The result of measuring the magnetic resistance is shown in FIG. Electrical resistance per area, RA = 0.138 Ω · μm 2 A magnetoresistance change rate of 5.4% was obtained at room temperature.
Table 3 indicates the conditions for forming the thin film shown in Example 3.
・ヘリコン波スパッタ装置よって成膜
・表４にスパッタ条件を示す。
・ＭｇＯ単結晶基材上に下から Ｃｒ（１０）／Ａｇ（２００）／ＣＦＡＳ（２０）／Ａｇ（５）／ＣＦＡＳ（５）／ＣｏＦｅ（２）／ＩｒＭｎ（１０）／Ｒｕ（８） の構造 （図３）
数字はそれぞれの膜厚（単位：ｎｍ）
ＣＦＡＳはＣｏ２ＦｅＡｌ０．５Ｓｉ０．５の組成のホイスラー合金を示す
ＣｏＦｅはＣｏ０．７５Ｆｅ０．２５ の組成の合金、ＩｒＭｎはＩｒ０．２２Ｍｎ０．７８ の組成の合金を表す。
・結晶構造の規則性の向上のため、下部ＣＦＡＳ層成膜直後に４００℃で熱処理を加えた。
・成膜後に電子線リソグラフィー、Ａｒイオンエッチング、により０．６μｍ×０．３μｍの大きさに微細加工。絶縁体ＳｉＯ２とＣｕ上部電極をスパッタによって作成し、面直方向磁気抵抗効果素子を作成した。
・実施例２と同じ条件で磁場中熱処理を行い、同様の方法で磁気抵抗を測定した。
・磁気抵抗を測定した結果を図８に示す。面積あたり電気抵抗、ＲＡ＝０．１０８Ω・μｍ２ 室温で６．８％の磁気抵抗変化率を得た。
表４は実施例４に示す薄膜の作成条件を指し示す
-Film formation by helicon wave sputtering equipment-Table 4 shows sputtering conditions.
From the bottom on the MgO single crystal substrate, Cr (10) / Ag (200) / CFAS (20) / Ag (5) / CFAS (5) / CoFe (2) / IrMn (10) / Ru (8) Structure (Fig. 3)
Numbers are for each film thickness (unit: nm)
CFAS represents a Heusler alloy with a composition of Co 2 FeAl 0.5 Si 0.5 CoFe represents an alloy with a composition of Co 0.75 Fe 0.25 , IrMn represents an alloy with a composition of Ir 0.22 Mn 0.78 .
In order to improve the regularity of the crystal structure, a heat treatment was performed at 400 ° C. immediately after the formation of the lower CFAS layer.
-After film formation, fine processing to 0.6 μm × 0.3 μm by electron beam lithography and Ar ion etching. An insulator SiO 2 and a Cu upper electrode were formed by sputtering to produce a perpendicular magnetoresistive element.
A heat treatment in a magnetic field was performed under the same conditions as in Example 2, and the magnetoresistance was measured by the same method.
-The result of measuring the magnetic resistance is shown in FIG. Electrical resistance per area, RA = 0.108 Ω · μm 2 A magnetoresistance change rate of 6.8% was obtained at room temperature.
Table 4 indicates the conditions for forming the thin film shown in Example 4.
・ヘリコン波スパッタ装置によって成膜
・表５にスパッタ条件を示す。
・ＭｇＯ単結晶基材上に下から Ｃｒ（１０）／Ａｇ（２００）／ＣＭＳ（２０）／Ａｇ（５）／ＣＭＳ（５）／ＣｏＦｅ（２）／ＩｒＭｎ（１０）／Ｒｕ（５） の構造
数字はそれぞれの膜厚（単位：ｎｍ）
ＣＭＳはＣｏ２ＭｎＳｉの組成のホイスラー合金を示す
ＣｏＦｅはＣｏ０．７５Ｆｅ０．２５ の組成の合金、ＩｒＭｎはＩｒ０．２２Ｍｎ０．７８ の組成の合金を表す。
・結晶構造の規則性の向上のため、下部ＣＭＳ層成膜直後に４００℃で熱処理を加えた。
・成膜後に電子線リソグラフィー、Ａｒイオンエッチング、により０．９μｍ×０．５μｍの大きさに微細加工。絶縁体ＳｉＯ２とＣｕ上部電極をスパッタによって作成し、面直方向磁気抵抗効果素子を作成した。
・実施例２と同じ条件で磁場中熱処理を行い、同様の方法で磁気抵抗を測定した。
・磁気抵抗を測定した結果を図９に示す。面積あたり電気抵抗、ＲＡ＝０．２１６Ω・μｍ２ 室温で６．５％の磁気抵抗変化率を得た。
表５は実施例５に示す薄膜の作成条件を指し示す
・ Film formation by helicon wave sputtering system ・ Table 5 shows sputtering conditions.
From the bottom on the MgO single crystal substrate, Cr (10) / Ag (200) / CMS (20) / Ag (5) / CMS (5) / CoFe (2) / IrMn (10) / Ru (5) Structure Numbers are for each film thickness (unit: nm)
CMS represents a Heusler alloy having a composition of Co 2 MnSi CoFe represents an alloy having a composition of Co 0.75 Fe 0.25 and IrMn represents an alloy having a composition of Ir 0.22 Mn 0.78 .
In order to improve the regularity of the crystal structure, a heat treatment was applied at 400 ° C. immediately after the formation of the lower CMS layer.
・ After film formation, fine processing to 0.9μm × 0.5μm by electron beam lithography and Ar ion etching. An insulator SiO 2 and a Cu upper electrode were formed by sputtering to produce a perpendicular magnetoresistive element.
A heat treatment in a magnetic field was performed under the same conditions as in Example 2, and the magnetoresistance was measured by the same method.
-The result of measuring the magnetic resistance is shown in FIG. Electrical resistance per area, RA = 0.216 Ω · μm 2 A magnetoresistance change rate of 6.5% was obtained at room temperature.
Table 5 indicates the conditions for forming the thin film shown in Example 5.
・ヘリコン波スパッタ装置よって成膜
・表４にスパッタ条件を示す。
・ＭｇＯ単結晶基材上に下から Ｃｒ（１０）／Ａｇ（２００）／ Ｃｒ（１０）／ＣＭＳ（２０）／Ｃｕ（４）／ＣＭＳ（５）／ＣｏＦｅ（２）／ＩｒＭｎ（１０）／Ｒｕ（５） の構造
数字はそれぞれの膜厚（単位：ｎｍ）
ＣＭＳはＣｏ２ＭｎＳｉの組成のホイスラー合金を示す
ＣｏＦｅはＣｏ０．７５Ｆｅ０．２５ の組成の合金、ＩｒＭｎはＩｒ０．２２Ｍｎ０．７８ の組成の合金を表す。
・結晶構造の規則性の向上のため、下部ＣＭＳ層成膜直後に４００℃で熱処理を加えた。
・実施例２と同様に、成膜後に電子線リソグラフィー、Ａｒイオンエッチング、により０．９μｍ×０．５μｍの大きさに微細加工。絶縁体ＳｉＯ２とＣｕ上部電極をスパッタによって作成し、面直方向磁気抵抗効果素子を作成した。
・実施例２と同じ条件で磁場中熱処理を行い、同様の方法で磁気抵抗を測定した。
・磁気抵抗を測定した結果を図１０に示す。面積あたり電気抵抗、ＲＡ＝０．１６６Ω・μｍ２ 室温で８．６％の磁気抵抗変化率を得た。
表６は実施例６に示す薄膜の作成条件を指し示す
-Film formation by helicon wave sputtering equipment-Table 4 shows sputtering conditions.
From the bottom on the MgO single crystal base material Cr (10) / Ag (200) / Cr (10) / CMS (20) / Cu (4) / CMS (5) / CoFe (2) / IrMn (10) / Structure of Ru (5)
Numbers are for each film thickness (unit: nm)
CMS represents a Heusler alloy having a composition of Co 2 MnSi CoFe represents an alloy having a composition of Co 0.75 Fe 0.25 and IrMn represents an alloy having a composition of Ir 0.22 Mn 0.78 .
In order to improve the regularity of the crystal structure, a heat treatment was applied at 400 ° C. immediately after the formation of the lower CMS layer.
As in Example 2, after film formation, fine processing to 0.9 μm × 0.5 μm by electron beam lithography and Ar ion etching. An insulator SiO 2 and a Cu upper electrode were formed by sputtering to produce a perpendicular magnetoresistive element.
A heat treatment in a magnetic field was performed under the same conditions as in Example 2, and the magnetoresistance was measured by the same method.
FIG. 10 shows the result of measuring the magnetic resistance. Electrical resistance per area, RA = 0.166Ω · μm 2 A magnetoresistance change rate of 8.6% was obtained at room temperature.
Table 6 indicates the conditions for forming the thin film shown in Example 6.
以上の実施例と従来のものとを比較すると表７に示すように明らかな性能上の差異が認められた。
表７はCPP-GMR素子の特性の比較を指し示す
When the above examples were compared with conventional ones, a clear difference in performance was recognized as shown in Table 7.
Table 7 shows a comparison of the characteristics of CPP-GMR elements.
Claims (5)
少なくとも前記強磁性金属層と前記基材との間に、前記強磁性金属層の下地層として、面心立方格子の構造を持ち、かつ前記強磁性金属層よりも低い電気抵抗である金属からなる層が設けてあり、
前記強磁性金属層は組成式Ｃｏ ２ ＦｅＡｌ ｘ Ｓｉ １−ｘ （ＣＦＡＳ）で表される層であって、当該ＣＦＡＳ層は、エピタキシャル成長され、結晶方位が［００１］方向に揃ったものであることを特徴とする磁性薄膜素子。 A magnetic thin film element in which a thin film having a three-layer structure of a ferromagnetic metal layer, a paramagnetic metal layer, and a ferromagnetic metal layer is provided on a substrate,
At least between the ferromagnetic metal layer and the base material, as a base layer of said ferromagnetic metal layer consists of having the structure of face-centered cubic lattice, and said a ferromagnetic metal layer lower electrical resistivity than the metal Layers are provided ,
The ferromagnetic metal layer is a layer represented by a composition formula Co 2 FeAl x Si 1-x (CFAS), and the CFAS layer is epitaxially grown and has a crystal orientation aligned in the [001] direction. Magnetic thin film element characterized by the above.
少なくとも前記強磁性金属層と前記基材との間に、前記強磁性金属層の下地層として、面心立方格子の構造を持ち、かつ前記強磁性金属層よりも低い電気抵抗である金属からなる層が設けてあり、
前記強磁性金属層は組成式Ｃｏ ２ ＭｎＳｉ（ＣＭＳ）で表される層であって、当該ＣＭＳ層は、エピタキシャル成長され、結晶方位が［００１］方向に揃ったものであることを特徴とする磁性薄膜素子。 A magnetic thin film element in which a thin film having a three-layer structure of a ferromagnetic metal layer, a paramagnetic metal layer, and a ferromagnetic metal layer is provided on a substrate,
At least between the ferromagnetic metal layer and the base material, as a base layer of said ferromagnetic metal layer consists of having the structure of face-centered cubic lattice, and said a ferromagnetic metal layer lower electrical resistivity than the metal Layers are provided ,
The ferromagnetic metal layer is a layer represented by a composition formula Co 2 MnSi (CMS), and the CMS layer is epitaxially grown and has a crystal orientation aligned in the [001] direction. Thin film element.
5. The layer according to claim 1, wherein the paramagnetic metal layer is a layer made of a metal having a face-centered cubic lattice structure and an electric resistance lower than that of the ferromagnetic metal layer. The magnetic thin film element described .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008219619A JP5120950B2 (en) | 2008-08-28 | 2008-08-28 | Magnetic thin film element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008219619A JP5120950B2 (en) | 2008-08-28 | 2008-08-28 | Magnetic thin film element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010056288A JP2010056288A (en) | 2010-03-11 |
| JP5120950B2 true JP5120950B2 (en) | 2013-01-16 |
Family
ID=42071895
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008219619A Expired - Fee Related JP5120950B2 (en) | 2008-08-28 | 2008-08-28 | Magnetic thin film element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5120950B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012015221A (en) * | 2010-06-30 | 2012-01-19 | Daido Steel Co Ltd | Metal/insulator nano-granular thin film, nano-granular composite thin film and thin-film magnetic sensor |
| JP2012190914A (en) * | 2011-03-09 | 2012-10-04 | Tohoku Univ | Magnetoresistance effect element and magnetic device |
| JP5959313B2 (en) * | 2012-05-28 | 2016-08-02 | 三菱電機株式会社 | Magnetoresistive element, magnetic field detector and physical quantity detector |
| JP6444276B2 (en) * | 2015-07-28 | 2018-12-26 | 国立研究開発法人物質・材料研究機構 | Magnetoresistive element, its use and manufacturing method, and Heusler alloy manufacturing method |
| JP6774124B2 (en) * | 2019-11-01 | 2020-10-21 | 国立研究開発法人物質・材料研究機構 | Magneto-resistive element, magnetic head and magnetic reproduction device using the magnetoresistive element |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4409656B2 (en) * | 1998-03-20 | 2010-02-03 | 株式会社東芝 | Magnetoresistive element and magnetic reproducing apparatus |
| JP3488652B2 (en) * | 1999-01-20 | 2004-01-19 | シャープ株式会社 | Magnetoresistive film, method of manufacturing the same, and magnetic head using the same |
| JP4487472B2 (en) * | 2002-07-05 | 2010-06-23 | 株式会社日立製作所 | Magnetoresistive element, magnetic head including the same, magnetic recording apparatus, and magnetic memory |
| JP2005116703A (en) * | 2003-10-06 | 2005-04-28 | Alps Electric Co Ltd | Magnetic detecting element |
| WO2007126071A1 (en) * | 2006-04-27 | 2007-11-08 | Japan Science And Technology Agency | Magnetic thin film, magnetoresistive element using the same, and magnetic device |
-
2008
- 2008-08-28 JP JP2008219619A patent/JP5120950B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2010056288A (en) | 2010-03-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10749105B2 (en) | Monocrystalline magneto resistance element, method for producing the same and method for using same | |
| JP5586028B2 (en) | Ferromagnetic tunnel junction, magnetoresistive effect element and spintronic device using the same | |
| US8259420B2 (en) | TMR device with novel free layer structure | |
| CN109560192B (en) | Laminated structure, magnetoresistive element, magnetic head, sensor, high-frequency filter, and oscillator | |
| US8866243B2 (en) | Ferromagnetic tunnel junction structure and magnetoresistive element using the same | |
| JP6857421B2 (en) | Ferromagnetic tunnel junction, spintronics device using it, and method for manufacturing ferromagnetic tunnel junction | |
| WO2016017612A1 (en) | Magnetoresistive element, magnetic head using magnetoresistive element, and magnetic playback device | |
| JP2015090870A (en) | Method of manufacturing ferromagnetic tunnel junction | |
| JP5120950B2 (en) | Magnetic thin film element | |
| JP2018200948A (en) | Magnetoresistive effect element, magnetic head, sensor, high-frequency wave filter, and oscillation element | |
| JP2017174972A (en) | Magnetoresistive effect element | |
| JP6438636B1 (en) | Magnetoresistive effect element | |
| US20190273203A1 (en) | Magnetoresistive effect element | |
| JP7150317B2 (en) | ELECTRONIC DEVICE, MANUFACTURING METHOD THEREOF, AND MAGNETORESISTIVE ELEMENT | |
| JP7350363B2 (en) | Spin-orbit torque-based magnetic tunnel junction and its manufacturing method | |
| Malikov et al. | Epitaxial Ni films for ballistic ferromagnetic nanostructures | |
| Tsunegi et al. | Tunnel magnetoresistance in epitaxially grown magnetic tunnel junctions using Heusler alloy electrode and MgO barrier | |
| Zou et al. | Comparative study on the characteristics of network and continuous Ni films | |
| JPWO2019193871A1 (en) | Planar current giant magnetoresistive element, its precursor, and its manufacturing method | |
| WO2018061710A1 (en) | Magnetoresistive effect element | |
| Jiang et al. | High moment soft FeCoN/NiFe laminated thin films | |
| JP7375858B2 (en) | magnetoresistive element | |
| Xiang et al. | Reactive sputtering of (Co, Fe) nitride thin films on TiN-bufferd Si | |
| JP6986729B2 (en) | Single crystal magnetoresistive element and devices using it | |
| JP2008218641A (en) | Tunnel magnetoresistive element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110801 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120502 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120522 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120717 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20121016 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20121018 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151102 Year of fee payment: 3 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151102 Year of fee payment: 3 |
|
| S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |