JP5111998B2 - Substrate processing equipment - Google Patents

Description

  The present invention relates to a substrate processing apparatus that processes edge portions including bevel portions of various substrates such as semiconductor wafers, and more particularly to a substrate processing apparatus that removes and cleans unnecessary substances attached to the edge portions.

  A semiconductor element is manufactured through a series of processing steps including a film forming process for forming various films on the surface of a semiconductor wafer (hereinafter referred to as a wafer) and an etching process for removing unnecessary portions from the formed thin film. ing. However, an unnecessary film such as an insulating film or a metal film is formed on the edge portion of the wafer on which the film is formed, that is, the edge portion including the bevel portion. The part may be in an unstable state such as peeling. If this state is left as it is, the end of the film may be chipped or peeled off in the process of transporting to the next process, and the peeled pieces may be scattered as dust.

  In addition, since the circuit is formed in the central plane of the wafer, cleaning and subsequent checks are sufficiently managed, but it is also checked whether the edge of the wafer has been sufficiently cleaned compared to the circuit plane. Even if foreign matter adheres, it may be overlooked and may cause dust. Furthermore, in dry etching or the like, after processing the circuit surface, reaction products such as side wall protective films and polymer residues may be generated at the edge due to dry etching gas, photoresist, film to be processed, and the like. . If this reaction product is also peeled off from the edge of the wafer, it will cause dust. When such dust is scattered in the apparatus, there is a problem that it reattaches to the already processed wafer device surface and causes particles.

  In order to solve this problem, various processing methods have been developed so far. As one of the processing methods, while holding and rotating the wafer horizontally, a processing solution (etching solution) is sprayed from the spray nozzle toward the edge of the wafer and pure water is supplied from above to the vicinity of the center of the wafer. Then, there is a method for processing the edge portion. According to this processing method, the edge portion of the wafer can be etched with a constant width by adjusting the rotation speed of the wafer, the supply amount of the processing liquid, and the flow rate of pure water. As another processing method, a processing member having a groove of a size capable of inserting the edge portion of the wafer is used, the edge portion of the wafer is inserted into the groove, and a processing liquid is supplied to the processing member to provide an edge. There is a way to process parts. A substrate processing apparatus employing this processing method is disclosed, for example, in Patent Document 1 below. The present applicant has also filed an application regarding a method for processing such an edge portion (see, for example, Patent Document 2).

FIG. 8 is a schematic view of a substrate processing apparatus described in Patent Document 1 below, FIG. 9A is a plan view of processing members constituting the processing apparatus of FIG. 8, and FIG. 9B is a plan view of FIG. It is sectional drawing of CC line.
The substrate processing apparatus 30 includes a substantially cylindrical cleaning cup 31 and a spin chuck 32 that rotates inside the cleaning cup 31 while holding the wafer W horizontally. The wafer W held by the spin chuck 32 is provided. On the side, the two etching processing members 33 and 34 are arranged. These etching members 33 and 34 have grooves 33A and 34A extending in the horizontal direction along the surface of the wafer W on the side surface on the wafer W side, and the edges of the wafer W can be inserted into these grooves 33A and 34A. It is a size. Etching solution discharge pipes 35 and 36 and etchant supply pipes 37 and 38 are connected to the etching processing members 33 and 34, respectively. The etchant discharge pipes 35 and 36 are connected to the wafer W from the etchant supply pipes 37 and 38, respectively. It arrange | positions in the rotation advancing direction downstream (refer Fig.9 (a)). The etching solution is supplied to the internal spaces of the grooves 33A and 34A of the etching processing members 33 and 34 via the etching solution supply pipes 37 and 38, and the etching solution supplied to the internal spaces of the grooves 33A and 34A is The liquid is discharged to the outside through the etching liquid discharge pipes 35 and 36.

  In the processing of the wafer edge portion using the substrate processing apparatus 30, first, the arm moving operation mechanism is actuated to move the respective etching processing members 33 and 34, and the edge portion D of the wafer W (FIG. 9A). And FIG. 9B) are inserted into the grooves 33A and 34A of the respective processing members, and the wafer W is rotated in the clockwise direction of FIG. 10 at a predetermined rotational speed. In this state, pure water is supplied from the nozzle 39 to the upper side of the wafer W, and a predetermined amount of the etching solution L is supplied from the etching solution supply pipes 37 and 38 into the grooves 33A and 34A. The edge portion of the wafer is processed in a state where a predetermined amount of the etching solution is filled therein. The treated processing solution is collected through the etching solution discharge pipes 35 and 36.

According to the substrate processing apparatus 30, the etching solution discharge pipes 35, 36 are disposed downstream of the etching solution supply pipes 37, 38 in the direction of rotation of the wafer W. 34A, the direction of the etchant flow and the direction of rotation of the wafer W are the same, that is, the direction of the etchant flow and the direction of rotation of the wafer are the same. As a result, the relative movement speed between the etching solution in each of the grooves 33A and 34A and the wafer W is reduced, and the etching solution is less likely to be disturbed by the rotating wafer W, and the region where the wafer W is etched ( The boundary between the edge portion) and the region other than the edge portion where no etching is performed (device formation region) is clearly divided and processed. Further, even if the etching solution is splashed inside the grooves 33A and 34A, pure water is flowing on the surface of the wafer W, so that the copper thin film in the region inside the surface of the wafer W is etched by the etching solution. It has excellent operational effects such as lack of.
JP 2003-286597 A (FIGS. 2 and 3, paragraphs [0046] and [0047]) JP 2005-116949 A

  However, in the above conventional processing method, since the processing liquid (etching liquid) and pure water are sprayed directly onto the wafer, these liquids collide with the wafer and are scattered around the inner wall of the cleaning cup, etc. There is a risk of redeposition. Further, the processing area of the edge portion is determined by the position of the boundary portion where the pure water and the processing liquid (etching liquid) are in contact with each other. Therefore, it is very difficult to determine the area.

  Moreover, since the edge part of a wafer is processed in the groove | channel of an etching process member as for the substrate processing apparatus disclosed by the said patent document 1, scattering to the circumference | surroundings of a process liquid is reduced, but still the edge part of a wafer The opening of the groove into which the groove is inserted is widely opened, and the edge portion is processed while a predetermined amount of etching solution is filled in each groove during processing. There is a risk of scattering. Further, in each groove, since the etching solution is less likely to be disturbed by the rotating wafer W, the relative movement speed between the etching solution and the wafer W must be reduced. There is a limit to improving the processing capability such as reducing the processing time because the flow rate of the liquid becomes slow.

  The present invention has been made in order to solve such problems of the prior art, and an object of the present invention is to provide a substrate processing apparatus capable of remarkably improving processing accuracy and processing capability.

  Another object of the present invention is to provide a substrate processing apparatus that can perform processing by accurately setting the processing width of a processing region.

  Still another object of the present invention is to provide a substrate processing apparatus capable of performing high-quality processing by eliminating scattering of processing liquid from the processing section.

In order to achieve the above object, a substrate processing apparatus according to claim 1 includes a substrate holding mechanism for holding a substrate to be processed while rotating the substrate, and a peripheral portion of the substrate to be processed held by the substrate holding mechanism. A processing head having a groove into which a part of the substrate is inserted, and processing the substrate processing apparatus by inserting a peripheral edge of the substrate to be processed into the groove, the processing head having a predetermined gap A pair of opposing first and second saddle sides and a connecting portion that connects one end of the first and second saddle sides, and is surrounded by the first and second saddle sides and the connecting portion; The formed portion forms the groove, the other end of the first and second side portions forms an insertion port into which a part of the peripheral edge of the substrate to be processed is inserted, and further supplies a processing liquid. First and second supply ports connected to the processing liquid supply means and a suction port connected to the vacuum suction means; Inlet and the suction port is provided in said groove, said second supply port, before Symbol first, opening the narrow gap projections to narrow the gap of the insertion port formed in at least one of the second Tsubahen portion It was made to be characterized.

According to a second aspect of the present invention, in the substrate processing apparatus of the first aspect, the first supply port is provided on an entry side into which a peripheral edge of the substrate to be processed enters , and the suction port is the substrate to be processed. It is characterized by being provided in the escape side from which the peripheral part of this escapes.

According to a third aspect of the present invention, in the substrate processing apparatus of the first or second aspect , a recess is formed around the second supply port of the processing head.

According to a fourth aspect of the present invention, in the substrate processing apparatus according to any one of the first to third aspects, the first and second side edges are one side opposite to the back surface of the substrate to be processed. The second supply port is provided in the narrow gap protrusion formed on the extended side part, with the end part of the part extending longer than the end part of the other side part.

The present invention provides the following excellent effects by having the above configuration. That is, according to the first and second aspects of the present invention, the second supply port is in the insertion port and is opened in at least one of the first and second ridges. With the guided processing liquid, it is possible to clean the wafer surface facing the front end of the ridge portion constituting the insertion port.
Further, since a high-speed flow of a gas containing a processing liquid can be generated in the groove of the processing head, the peripheral portion of the substrate to be processed, particularly the bevel portion, can be processed with high accuracy and the processing capability can be increased. .

According to the invention of claim 3, since the recess is formed around the opening of the second supply port, the processing liquid is sufficiently supplied even when the substrate to be processed is opposed to the second supply port.

Furthermore, according to the invention of claim 4, the back surface of the substrate to be processed can be sufficiently cleaned.

  Hereinafter, the best embodiment of the present invention will be described with reference to the drawings. However, the embodiment described below exemplifies a substrate processing apparatus for embodying the technical idea of the present invention, and is not intended to identify the present invention as this substrate processing apparatus. Other embodiments within the scope of the claims are equally applicable.

  The outline of the substrate processing apparatus according to the first embodiment of the present invention will be described with reference to FIGS. 1 is a schematic sectional view showing a substrate processing apparatus according to Embodiment 1 of the present invention, and FIG. 2 is a plan view showing a positional relationship between a processing head and a wafer accommodated in the apparatus of FIG.

  As shown in FIG. 1, the substrate processing apparatus 1 processes a rotary table 2 that holds and rotates a disk-shaped wafer W having a predetermined diameter substantially horizontally, and a peripheral portion of the wafer W. And a processing head 7. The rotary table 2, the processing head 7, and the like are accommodated in a chamber 6 having a predetermined size. The chamber 6 has an air conditioner (not shown) that controls the gas supplied into the chamber 6 on the ceiling, and is provided with an exhaust port 6B that supplies gas through the filter 6A and discharges the internal gas below. Further, when the gas (atmosphere) is controlled around the chamber 6, the filter 6A may be omitted. As the gas supplied into the chamber 6, for example, an inert gas such as air, carbon dioxide, nitrogen, or argon is used. The exhaust port 6B is connected to an exhaust processing device (not shown) through a pipe.

  As shown in FIG. 1, the rotary table 2 includes a holding table 3 on which the wafer W is placed, and a rotating shaft 4 connected to the holding table 3, and the rotating shaft 4 is a rotation drive mechanism 5. The rotary table 2 is rotated in a predetermined direction (the arrow direction in FIG. 2) by the rotary drive mechanism 5. As shown in FIG. 2, one or more processing heads 7 are provided on the peripheral edge of the wafer W. When a plurality of processing heads 7 are used, the wafer W can be processed at a plurality of locations, so that the processing capability can be increased and high quality processing can be performed. The peripheral portion of the wafer W is a region (hereinafter referred to as a bevel portion) chamfered or provided with a predetermined angle R at the outermost peripheral edge of the disc-shaped wafer W, and a region where the semiconductor device is not formed (hereinafter referred to as a bevel portion). , Called the edge portion).

The processing head 7 is supported by a support arm (not shown) having a predetermined length. The base of this support arm is fixed to a support base (not shown). The support arm is connected to a head drive mechanism (not shown). The support arm is moved in a predetermined direction by the head drive mechanism, and the processing head 7 fixed to the tip of the support arm is attached to the peripheral portion of the wafer W. You can approach or leave. The processing head 7 sucks the processing liquid supply device 15A for supplying various processing liquids into the U-shaped groove 9 (see FIGS. 3A and 3B) while reducing the pressure in the groove. A suction device 15B is connected. That is, the processing head 7 processing liquid supply device 15A, is connected by a pipe T ₁ by interposing the control valve V ₁ on the way, also connected with interposed control valve V ₂ and the suction device 15B pipe T ₂ Has been.

  The treatment liquid supplied from the treatment liquid supply apparatus 15A includes alkaline solutions (eg, ammonia, KOH, TMAH, etc.), acidic solutions (eg, hydrochloric acid, hydrofluoric acid, sulfuric acid, phosphoric acid, acetic acid, etc.), organic solvents (eg, IPA, acetone). Or ethanol, etc.), surfactants, chelating agents, hydrogen peroxide water, ozone water, hydrogen water, electrolyzed water, or a mixture of multiple types of pure water is used, and these treatment solutions are treated. Selected by the wafer to be processed. Further, a vacuum pump, a vacuum blower or the like is used for the suction device 15B.

  Next, the structure of the processing head will be described with reference to FIGS. 3 shows the processing head, FIG. 3 (a) is a perspective view of the processing head, FIG. 3 (b) is a cross-sectional view taken along line AA in a state where a wafer is inserted into the processing head of FIG. 3 (a), FIG. 4 is a cross-sectional view taken along line B-B in a state where the wafer is inserted in FIG.

The processing head 7 is composed of a rectangular parallelepiped block having a substantially U-shaped groove 9 having a width and depth into which a part of the peripheral edge of the wafer W is inserted, and is formed of a synthetic resin molding. The U-shaped groove 9, a pair of first having a predetermined gap D ₁ the drilled facing the plate-like member having a predetermined area, the second Tsubahen portion 8A, and 8B, the first of these, It is formed by a back wall portion 8C that connects one end of the second heel side portions 8A and 8B, and an opening 9A that opens the other end. In the present embodiment, an example in which the processing head 7 is formed as an integral structure of a synthetic resin molding will be described as an example. However, for example, the processing head 7 may be formed as an assembly complex formed by assembling a plurality of members. As shown in FIG. 3A, the first and second ridges 8A and 8B are opposed to each other in the vertical direction when the wafer W is processed. The opening 9A is an insertion port into which the peripheral edge of the wafer W is inserted. The size of the processing head 7, for example, the width dimension _{L 1} is 50 mm, the length _{L 2} is set to 30 mm.

The back wall 8C has a supply port 10A for supplying a treatment liquid to one wall in the longitudinal direction on the wall surface 8C ′ on the opening 9A side, a suction port 11A for sucking a gas, a treatment liquid, and the like at the other end, and a first Between the supply port 10A and the suction port 11A, a structure 12 for changing the flow velocity flowing in the U-shaped groove 9 is formed. 3A and 4, the supply port 10 </ b> A is provided on the side where the peripheral edge of the rotating wafer W enters the U-shaped groove 9, that is, on the unprocessed side of the wafer W (rotational direction). Is formed upstream). An opening 10B is formed on the surface of the first flange 8A, and the opening 10B and the supply port 10A are connected by a through hole 10 penetrating through the inner wall 8C. The opening 10B is coupled to the processing liquid supply device 15A.

  The suction port 11 </ b> A is formed on the side where the peripheral edge of the wafer W escapes from the U-shaped groove 9, that is, on the processed side of the wafer W (downstream in the direction of rotation). As shown in FIG. 4, an opening 11 </ b> B is formed on the outer surface of the back wall portion 8 </ b> C, and the opening 11 </ b> B and the suction port 11 </ b> A are connected by a through hole 11 penetrating the inside of the back wall portion 8 </ b> C. The opening 11B is coupled to the suction device 15B. The opening area of the suction port 11A is formed larger than the supply port 10A. Therefore, in order to increase the opening area of the suction port 11A, it is preferable to provide a recess having a large diameter around the opening. Thus, by increasing the opening area of the suction port 11A, it becomes possible to suck more fluid. By increasing the suction force, the flow velocity of the fluid flowing in the U-shaped groove 9 can be increased. Further, when the suction port 11A is provided in the back wall portion 8C, the distance between the peripheral portion of the wafer W and the suction port 11A is shortened during the processing of the wafer W, so that the processed processing liquid and the like are not scattered to other parts. High-speed air current can be concentrated on the end (top) of the part.

The structure 12 is formed of a protrusion that is a raised surface of the back wall 8C ′. The projection 12 has a triangular shape having an inclined surface 12 ₁ which is inclined toward the supply port 10A to the suction port 11A at a predetermined angle. By providing the inclined surface 12 _1, the flow of gas (fluid) to be described later becomes smooth. This structure, that is, the protrusion 12 serves to accelerate the fluid passing through the U-shaped groove 9. That is, as shown in FIGS. 3B and 4, when the peripheral edge of the wafer W is inserted into the groove space S in the U-shaped groove 9, the insertion depth is set to the wall surface 8 </ b> C of the back wall portion 8 </ b> C. The distance to 'is the gap G, and the height of the protrusion 12 is set to H, so that the gap G ₁ is narrow between the top of the protrusion 12. Gap _{G 1} at this time is set to, for example, a range of 0.1 to 3.0 mm. As described above, when the gap between the peripheral edge portion of the wafer W is set to the narrow gap G ₁ by the protrusion 12, when the suction device 15 B is operated and the inside of the groove space S of the U-shaped groove 9 is depressurized and sucked, the gas is one end 9 _L and the wafer W and a pair of narrow gap projections 8a of the U-shaped groove 9 is sucked from the gap G ₂ portions between 8b into the groove spaces S (Incidentally, the groove space S from the other end portion 9 _R side (The description is omitted here.) The sucked gas is throttled by the narrow gap G ₁ portion of projection 12 top from a wide gap G of the groove space S, becomes high-speed air stream flow velocity is accelerated when passing through the narrow gap G ₁ portion, suction port It is sucked into 11A. With such a structure, the flow velocity when the flow velocity is increased is set to a high-speed air flow in the range of 100 to 1000 m / sec. The flow rate of this range, the magnitude of the U-shaped groove 9 is set by adjustment and control of the suction device 15B such as a gap G _1.

The U-shaped groove 9 has an opening 9 </ b> A that has a depth at which the peripheral edge of the wafer W is inserted by a predetermined width and is wider than the thickness of the peripheral edge of the wafer W. Narrow gap protrusions 8a and 8b that narrow the gap are formed in the opening 9A, that is, the insertion opening. These narrow gap protrusions 8a, 8b is, first, second Tsubahen portion 8A, is formed in the bank-like protrusion having a predetermined width length and height the tip was raised in 8B, the gap D ₂ is It is narrower than the inside of the gap D _1. With this structure, the U-shaped groove 9 has a cylindrical body in which the opening 9A is narrowed by the narrow gap protrusions 8a and 8b, a groove space S of a predetermined size is formed inside, and both end portions 9L and 9R are open. It has become. The gap D ₂ of the opening 9A, this case the peripheral edge of the wafer W is inserted into the gap D ₂ portions, so that the narrow gap G ₂ is formed between the upper and lower surfaces of the peripheral portion. The gap _{G 2} is set to a range of 0.1 to 10 mm.

Each of the narrow gap protrusions 8a and 8b serves as a restriction weir that narrows the gap of the U-shaped groove 9 and restricts the processing liquid from scattering from the inside of the groove. That is, narrow gap projection 8a to the opening 9A portions are provided as the 8b, wafers W processed during even if the treatment liquid supplied to the groove space S jump out through the gap D ₂ to the outside of these narrow gap protrusions 8a, 8b It collides with and is returned to the inside. As a result, it is unnecessary to contaminate the non-treated surface of almost eliminates wafer W is being scattered outside the processing liquid is jumped out from the gap D _2. Further, since the peripheral edge of the wafer W is processed by the narrow gap protrusions 8a and 8b in the groove space S defined by the narrow gap protrusions 8a and 8b, the processing area and the non-processing area of the peripheral edge are separated. It is possible to accurately classify and to easily set the processing area depending on the degree of insertion of the peripheral edge of the wafer W. In this embodiment, the narrow gap protrusions 8a and 8b are provided on both the first and second saddle sides 8A and 8B, but they may be formed only on one of the saddle sides. With such a configuration, it is possible to partition and process one side of the peripheral edge of the wafer W.

In addition, the narrow gap protrusions 8a and 8b provided on the first and second saddle sides 8A and 8B are notched to form recesses 8 ₁ and 8 ₁ , and these recesses 8 _{1, 8} respectively to the _first bottom surface second supply ports 13A, 14A are provided. Further, openings 13B and 14B are formed on the surface of the first heel side portion 8A, and these openings 13B and 14B and the supply ports 13A and 14A penetrate through the first and second heel side portions 8A and 8B. The through holes 13 and 14 are connected. The openings 13B and 14B are coupled to the processing liquid supply device 15A.

Next, a method for processing the peripheral portion of the wafer W using the substrate processing apparatus 1 will be described with reference to FIGS.
First, a single wafer W is placed on the holding table 3 of the turntable 2 so that the center thereof is located on the extension line of the axis of the rotary shaft 4, and a chuck (not shown) is placed on the placement surface. The wafer W is fixed on the holding table 3. A predetermined gas, such as N ₂ gas, is supplied into the chamber 6 from a gas supply source (not shown). Then, a head driving mechanism (not shown) is operated to move the processing head 7 to the peripheral portion of the wafer W, and a part of the peripheral portion of the wafer W is inserted into the U-shaped groove 9 of the processing head 7. The insertion of the peripheral edge, the outermost edge of the peripheral portion, i.e., the gap _{G 1} between the bevel portion and the projections 12 is adjusted to a range of 0.1 to 3.0 mm. In this state, the rotation shaft 4 is rotated by the rotation drive mechanism 5 to rotate the wafer W held on the holding table 3 in a clockwise direction at a predetermined speed, for example, at a speed of one rotation in 20 seconds. Next, the suction device 15B is operated to perform suction while reducing the pressure in the groove space S of the U-shaped groove 9 of the processing head 7. When the inside of the groove space S of the U-shaped groove 9 is sucked under reduced pressure, N ₂ gas is sucked into the groove space S from one end side 9 _L and the gap G ₂ portion of the U-shaped groove 9. When the N ₂ gas sucked in this way reaches the narrow gap G ₁ portion between the protrusion 12 and the bevel portion, the flow velocity of the N ₂ gas flowing in the groove space S is accelerated to become a high-speed air flow, and the gap G ₁ Go through the part. The flow rate of the high-speed air stream is controlled by the operating state of the set and the suction device 15B of the gap G _1. Then, the supply ports 10A and 13A of the high-speed flow in the fluid grooves a predetermined processing liquid control valve V ₁ from opening the processing liquid supply source 13A in a state that caused the space S, a predetermined amount to 13B (Comparison Supply a small amount). When this processing liquid is supplied into the groove space S, a part of the processing liquid exiting the supply port 10A is first splashed by the air flow generated by the suction, and then collides with the protrusion 12 to be crushed into a splash. It flies Te, the flying the splash is conveyed while being mixed into the aforementioned high-speed air stream as it passes through the further narrow gap G _1. Processing liquid further is pulverized finer becomes atomized by a change in air pressure when passing through the narrow gap G ₁ moiety.
The second supply ports 13A, processing solution exiting the 14A is being sucked into the suction port 11A through the recessed portion ₈₁ and is mixed with the high-speed air stream atomization. Then, the high-speed air stream containing the atomized processing liquid hits the peripheral portion of the wafer W, and at the same time, the processing liquid physically hits the peripheral portion of the wafer W, particularly the edge portion and the bevel portion. Since new treatment liquids are supplied one after another, the chemical reaction is also promoted and the peeling action of the unnecessary film is enhanced, so that unnecessary substances in the bevel portion are efficiently removed. When the wafer W peripheral portion passes through the suction port 11A, since the air flow sucked from the other end 9 _R dries the treatment liquid sprayed onto the wafer W peripheral surface, the wafer W peripheral portion to escape the treatment head 7 Sometimes it is completely dry.

Each recess _81, 82 _1, its inner part, i.e., preferably provided with respective narrow gap projections 8a, the inclined surface ₈₁ from the surface at a position retracted towards the groove space S 8b _{'. 'The} provision of, at the time of processing the peripheral portion of the wafer W, the inclined surface _81' inclined surface ₈₁ a gap is narrowed between the top and the wafer W of, including the processing liquid passing through the recessed portion ₈₁ stream The flow velocity of is accelerated. Since the supply ports 13A and 14A are provided in the respective narrow gap projections 8a and 8b, the distal ends of the first and second saddle side portions 8A and 8B are extended, and the supply port 13A is connected to the extended portion. 14A and the flow path through which the processing liquid is passed through the narrow gap protrusions 8a and 8b, the processing efficiency of the edge flat surface and the bevel surface at the peripheral edge of the wafer W can be improved. It is also possible to provide a gas supply unit including a check that is not shown is disclosed in Patent Document 2 to the outside of the recessed portion 8 _1.

  In the processing method using the substrate processing apparatus 1 according to the first embodiment, the flow rate of the high-speed air flow is important, but the type of the processing liquid and the flow rate are fixed, and the residue adhered in the semiconductor manufacturing process using the same sample is used. When the removal state was observed, it was hardly removed when the flow velocity was 10 m / sec or less, and when the flow velocity was 50 m / sec, the removal was 30% or less. Further, when the flow velocity was 100 m / sec, 90% or more was removed, and 200 m It was confirmed that it was almost completely removed at / sec. And it has also been confirmed that the maximum value of the flow velocity is preferably 1000 m / sec or less.

According to this processing method, the atomized high-speed airflow hits the peripheral edge of the wafer W as described above, so that a strong peeling action acts on the peripheral edge, particularly the bevel, and the waste on the peripheral edge is efficiently and substantially completely removed. Can be removed. Further, when the wafer W processed, the processing liquid is supplied into the groove space S, the supplied process liquid is collided from the gap D ₂ narrow chink projections 8a even if jump out outward, in 8b, or opening It is pushed by the gas sucked from the part 9A and returned to the inside. As a result, it is unnecessary to contaminate the non-treated surface of almost eliminates wafer W is being scattered outside the processing liquid is jumped out from the gap D _2. Further, since the peripheral edge portion of the wafer W is processed in the groove space S defined by the narrow gap protrusions 8a and 8b by these narrow gap protrusions 8a and 8b, the processing area and the non-processing area of the peripheral edge portion are separated. It is possible to accurately classify and to easily set the processing region by adjusting the insertion degree of the peripheral portion of the wafer W. Also, the treatment liquid is a mixture of one or more of alkaline solution, acidic solution, organic solvent, surfactant, chelating agent, hydrogen peroxide solution, ozone water, hydrogen water, electrolyzed water, pure water By using, processing according to the wafer W becomes possible.

In the first embodiment, the structure 12 is a triangular protrusion. However, as shown in FIG. 5, a structure having another shape may be used. FIG. 5 is a schematic cross-sectional view showing an example of a structure.
The cross section of the structure 12 is not limited to the right triangle shape shown in the above embodiment (FIG. 5 (a)), but as shown in FIGS. 5 (b) to 5 (e). Similarly, a semi-cylindrical shape 12B, a triangular shape 12C, and an elliptical shape 12D, or a concave groove 12E that utilizes a change in atmospheric pressure instead of the protrusion. When the shape of the structure is an equilateral triangle, a quadrangle, a circle or an ellipse, or a semi-cylindrical shape, these structures are narrowly spaced from the peripheral edge of the wafer W during the processing of the wafer W, and a high-speed air flow between the peripheral edge Can be generated. Further, the concave groove 12E can also generate a high-speed air flow by utilizing changes in atmospheric pressure and flow velocity. In addition, the arrow of FIG. 5 has shown the direction of the airflow.

  In the first embodiment, the supply port 10A and the suction port 11A are provided in the back wall portion 8C. However, the supply port 10A and the suction port 11A are provided in other locations, for example, one or both of the first and second rib sides 8A and 8B. May be. That is, the supply port 10A may be provided on the side where the wafer W of the first and second side edges 8A and 8B enters, and the suction port 10B may be provided on the escape side. Further, the narrow gap protrusions 8a and 8b of the first and second saddle sides 8A and 8B are not essential and may be omitted. Further, the structure 12 may be provided on the inner wall portion on the groove space S side of the first and second flange portions 8A and 8B in addition to the back wall portion 8C ′.

(Modification)
A substrate processing apparatus according to a modification of the first embodiment will be described with reference to FIGS. 6 and 7. 6 shows a processing head of a substrate processing apparatus according to a modification of the first embodiment, FIG. 6 (a) is a perspective view of the processing head, and FIG. 6 (b) shows a wafer on the processing head of FIG. 6 (a). FIG. 7 is a cross-sectional view taken along line A ₁ -A ₁ in a state where W is inserted, and FIG. 7 is a cross-sectional view taken along line B ₁ -B ₁ where wafer W is inserted in FIG.

  The substrate processing apparatus according to the present modification uses the processing head 7A shown in FIG. 6A in place of the processing head 7A of the substrate processing apparatus according to the second embodiment. The back side is processed. The processing head 7A changes the length of the first and second side edges 8A and 8B, and the lower second side edge 8B extends from the upper first side edge 8A toward the center of the wafer W. Yes. Then, the narrow gap protrusions 8a and 8b are provided at the distal ends of the first and second saddle edges 8A and 8B, and supply ports 13A and 14A are formed in the narrow gap protrusions 8a and 8b, respectively.

  The processing of the wafer using the processing head 7A is the same as the processing using the processing head 7. However, when the processing head 7A is used, the lower second side 8B is the upper first side. Since the tip end portion is extended longer than 8A and the supply port is provided in this extension portion, the peripheral portion of the wafer W, particularly the back side of the edge portion, can be processed best. The edge portion back surface wraps around from the edge portion surface side during processing, and residue tends to remain in this portion. However, by using the processing head 7A, such residue can be efficiently removed.

FIG. 1 is a schematic sectional view showing a substrate processing apparatus according to Embodiment 1 of the present invention. FIG. 2 is a plan view showing the positional relationship between the processing head and the wafer accommodated in the apparatus of FIG. FIG. 3 shows the processing head, FIG. 3A is a perspective view of the processing head, and FIG. 3B is a cross-sectional view taken along the line AA in a state where a wafer is inserted into the processing head of FIG. FIG. 4 is a cross-sectional view taken along line B-B in a state where the wafer W is inserted into the processing head of FIG. FIG. 5 is an explanatory diagram illustrating a modification of the structure. 6 shows a processing head of a substrate processing apparatus as a modification of the first embodiment, FIG. 6A is a perspective view of the processing head, and FIG. 6B shows a wafer W placed on the processing head of FIG. it is _a 1 -A ₁ cross-sectional view taken along a line inserted state. FIG. 7 is a cross-sectional view taken along line B ₁ -B ₁ in a state in which the wafer W is inserted into the processing head of FIG. FIG. 8 is a schematic diagram of a conventional substrate processing apparatus. 9A is a plan view of a processing member constituting the processing apparatus of FIG. 8, and FIG. 8B is a cross-sectional view taken along the line CC of FIG. 8A.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 2 Rotary table 3 Holding stand 4 Rotating shaft 5 Rotation drive mechanism 6 Chamber 7, 7A Processing head 8A, 8B 1st, 2nd edge part 8a, 8b Narrow gap protrusion 9 U-shaped groove 9A Opening 10A 1st 1 supply port 13A, 14A 2nd supply port 12, 12A-12E Structure 11A Suction port S Groove space W Wafer (substrate to be processed)

Claims (4)

A substrate holding mechanism for holding the substrate to be processed while rotating, and a processing head having a groove into which a part of the peripheral edge of the substrate to be processed held by the substrate holding mechanism is inserted, and in the groove In the substrate processing apparatus for processing by inserting a peripheral edge portion of the substrate to be processed, the processing head includes a pair of first and second edge portions and a first and second edge sides facing each other with a predetermined gap. A connecting portion that connects one end of each portion, and a portion surrounded by the first and second flange portions and the connecting portion forms the groove, and the other ends of the first and second flange portions. A gap is formed between the first and second supply ports connected to the processing liquid supply means for supplying the processing liquid and the vacuum suction means. and a aspiration port, said first supply port and the suction port is provided in said groove, said second supply port, before Symbol first The substrate processing apparatus is characterized in that is opened to a narrow gap projections narrowing the least gap of the insertion port formed in one of the second Tsubahen unit. The first supply port is provided on an entry side into which a peripheral portion of the substrate to be processed enters, and the suction port is provided on an escape side from which a peripheral portion of the substrate to be processed escapes. 2. The substrate processing apparatus according to 1. The substrate processing apparatus according to claim 1, wherein a recess is formed around the second supply port of the processing head. The first, a second Tsubahen portion, an end portion of one of Tsubahen portion opposed to the back surface of the substrate longer extended from an end portion of the other Tsubahen portion, Tsubahen that said extension set The substrate processing apparatus according to claim 1, wherein the second supply port is provided in the narrow gap protrusion formed in the section.

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