JP5100302B2 - High frequency semiconductor package - Google Patents

Description

  The present invention relates to a package for a high-frequency semiconductor with improved durability against thermal expansion.

  Conventional high-frequency semiconductor packages are formed by bonding a rectangular parallelepiped cap and a plate-shaped bottom surface portion with solder or an adhesive. This rectangular parallelepiped cap is formed only by a flat surface, and there is a problem that if the thermal expansion coefficient of the material forming the cap and the bottom surface portion is different, the cap is distorted and cracks are generated. This problem appears remarkably in, for example, a package for a power semiconductor that consumes 10 to 100 W or more of power.

  Usually, a metal such as copper is used for the bottom surface because it is necessary to be grounded. Therefore, it is conceivable to form the package with a metal having a thermal expansion coefficient close to that of the metal at the bottom. However, copper is expensive and requires treatment such as gold plating to prevent oxidation and maintain high-frequency characteristics. For this reason, this method has a problem that the manufacturing cost increases.

  On the other hand, a flexible resin has a large material change over time and has low heat resistance. For this reason, ceramics are often used as the material of the cap, but ceramics have a significantly different coefficient of thermal expansion from metals, and cracks may occur in the cap due to thermal expansion.

In this regard, a high-frequency transistor package in which a material having excellent thermal conductivity is prepared and a heat dissipation substrate is provided using this material has been proposed (for example, Patent Document 1).
Japanese Patent Application Laid-Open No. 2002-121639

  However, in the technique described in Patent Document 1, it is necessary to newly prepare a material having excellent thermal conductivity, and it is necessary to form a heat radiating substrate. It was.

In order to achieve this object, the present invention has a plate-like bottom surface portion made of metal and a storage portion which is formed of a nonmetal and is a space for storing circuit components therein, and surrounds the storage portion. The outer wall includes a cap including a curved surface on the cut surface when the outer wall is cut along the direction of the largest thermal expansion of the bottom surface portion .

  In order to achieve this object, the present invention has a plate-like bottom surface portion made of metal and a storage portion which is formed of a nonmetal and is a space for storing circuit components therein, and surrounds the storage portion. There is provided a high-frequency semiconductor package comprising a cap including a curved surface on an outer wall.

  According to the present invention, even if the thermal expansion coefficients of the bottom surface portion and the cap are different from each other, there is an effect that the cap is hardly damaged when the bottom surface portion is thermally expanded.

  Hereinafter, an embodiment of a high-frequency semiconductor package according to the present invention will be described in detail with reference to the drawings. In addition, while attaching | subjecting the same code | symbol about the same location in each figure, the overlapping description is abbreviate | omitted.

<Outline of Embodiment>
The high-frequency semiconductor package of the present embodiment has a plate-shaped bottom surface portion made of metal, and a storage portion that is a non-metal storage space that stores circuit components therein, and surrounds the storage portion. And a cap including a curved surface.

<Details of Embodiment>
(First embodiment)
FIG. 1 is an external perspective view of the high-frequency semiconductor package of the first embodiment. As shown in FIG. 1, the high-frequency semiconductor package of this embodiment includes a plate-like bottom surface portion 20 formed of metal and a storage portion 40 that is formed of nonmetal and is a space for storing circuit components therein. And a cap 10 having a shape obtained by cutting a pillar body having a substantially circular bottom surface by a single plane perpendicular to the bottom surface. Further, the power semiconductor is housed in the housing portion 40, and the lead 30 is inserted into the side wall of the cap 10.

  2 is a cross-sectional view of the high-frequency semiconductor package of this embodiment taken along line AA in FIG. As shown in FIG. 2, in the cross-sectional view taken along the line AA, which is a cross-section taken along a plane parallel to the bottom surface of the cap 10, the shape of the cross-section of the cap 10 is a substantially semicircular shape. 40.

  3 is a cross-sectional view of the high-frequency semiconductor package of this embodiment taken along line BB in FIG. As shown in FIG. 2, in the cross-sectional view taken along the line BB, which is a cross-section taken along a plane perpendicular to the bottom surface of the cap 10, the cross-sectional shape of the cap 10 is rectangular and has a storage portion 40. In FIG. 3, the lead 30 and the insertion hole of the lead 30 are omitted.

  FIG. 4 is a top view when the cap 10 of the high-frequency semiconductor package of this embodiment is removed. Details of the configuration are omitted. A chip 35 and a lead 30 are disposed on the surface of the bottom surface portion 20. As shown in FIG. 4, when the chip 35 is arranged long in the arrow X direction, the high temperature portion due to heat generated by the chip 35 is long in the arrow X direction and short in the arrow Y direction as shown by the hatched line 50. At this time, thermal expansion is greatest in the direction of arrow X.

  For this reason, the cap 10 is configured so that the cut surface includes a curve when cut along the direction in which the bottom surface portion 20 thermally expands. In particular, it is preferable that the cut surface includes a curved line when cut along the direction with the largest thermal expansion.

  In the present embodiment, the thermal expansion is greatest in the direction of arrow X in FIG. Therefore, in the cut surface when cut along the direction of the arrow X, that is, in the cross-sectional view taken along the line AA in FIG. 1, the cross section becomes a semicircle and has a curve.

  Here, the material will be described. As the metal forming the bottom surface portion 20, a simple substance or an alloy such as copper or aluminum can be used. Resin and ceramics can be used as the nonmetal forming the cap 10, but are not limited thereto.

  1 to 4 show a symmetrical high-frequency semiconductor package, the high-frequency semiconductor package of this embodiment includes a shape that is not a target figure.

  As described above, in the high-frequency semiconductor package of this embodiment, the cap 10 is configured to include a curve on the cut surface when the cap 10 is cut along the direction in which the bottom surface portion 20 is thermally expanded. For this reason, even if the thermal expansion coefficients of the bottom surface portion 20 and the cap 10 are different, when the bottom surface portion 20 is thermally expanded as shown by an arrow C in FIG. 2, the cap 10 absorbs expansion due to the elasticity of the curved surface. There is an effect that the cap 10 is hardly damaged such as a crack.

(Second Embodiment)
FIG. 5 is an external perspective view of the high-frequency semiconductor package of the second embodiment. FIG. 6 is a top view of the high-frequency semiconductor package of the present embodiment, and FIG. 7 is a side view of the high-frequency semiconductor package of the present embodiment. FIG. 8 is a front view of the high-frequency semiconductor package of this embodiment. 9 is a cross-sectional view of the high-frequency semiconductor package of the present embodiment taken along line AA in FIG. 5, and FIG. 10 is a cross-sectional view of the high-frequency semiconductor package of the present embodiment taken along line BB in FIG.

  As shown in FIGS. 5 to 10, the high-frequency semiconductor package of the present embodiment is formed of a metal and is formed of a plate-like bottom surface portion 21 having a screwed defect portion 22 and a non-metal, and has a circuit inside. The cap 10 includes a storage portion 40 that is a space for storing components, and includes an outer wall that surrounds the storage portion 40 and includes a curved surface.

  The bottom surface portion 21 has a flange portion that is a portion that is wider than the width covered by the cap 10 in the horizontal or vertical direction and is not covered by the cap 10. It is desirable to provide the defect portion 22 in this flange portion. The defect portion 22 may be a notch or an insertion hole.

  The material of the bottom surface portion 21 and the shape and material of the cap 10 are the same as those in the first embodiment.

  5 to 10 illustrate symmetrical high-frequency semiconductor packages, the high-frequency semiconductor package of this embodiment includes a shape that is not a target graphic.

  As described above, in the high-frequency semiconductor package of this embodiment, the bottom surface portion 21 has the defect portion 22 that can be screwed. For this reason, there is an effect that the high-frequency semiconductor package can be easily attached to and detached from the circuit board.

(Third embodiment)
FIG. 11 is an external perspective view of the high-frequency semiconductor package of the third embodiment. 12 is a cross-sectional view taken along line AA in FIG. 11 of the high-frequency semiconductor package of the present embodiment, and FIG. 13 is a cross-sectional view taken along line BB in FIG. 11 of the high-frequency semiconductor package of the present embodiment.

  As shown in FIGS. 11 to 13, the high-frequency semiconductor package of the present embodiment is a plate-shaped bottom surface portion 20 formed of metal and a storage that is formed of a non-metal and stores circuit components therein. And a cap 11 having a cone-like shape with a side surface and a curved surface. Further, the power semiconductor is housed in the housing portion 40, and the lead 30 is inserted into the side wall of the cap 11.

  The cap 11 is a pyramid having a rectangular or polygonal bottom surface, and has one or more curved surface portions whose side surfaces are convex to the outside. FIGS. 11 to 13 show an example of the cap 11 having a curved surface portion whose bottom surface is rectangular and whose side surface is convex outward, but is not limited to this form. An example of the cap 11 in the case where the side surface has a plurality of curved surface portions that are convex outwards includes one in which the side surface is wavy.

  The shape and material of the bottom surface portion 20 and the shape and material of the cap 10 are the same as those in the first embodiment. Moreover, it can replace with the bottom face part 20 and can also use the bottom face part 21 of 2nd Embodiment.

  11 to 13 illustrate a symmetrical high-frequency semiconductor package, the high-frequency semiconductor package of this embodiment includes a shape that is not a target graphic.

  As described above, in the high-frequency semiconductor package of the present embodiment, the cap 11 is a pyramid having a rectangular or polygonal bottom surface, and has one or more curved surface portions whose side surfaces are convex outward. For this reason, even when the bottom surface portion 20 is thermally expanded in the vertical direction as well as in the horizontal direction shown in FIG.

(Fourth embodiment)
FIG. 14 is an external perspective view of the high-frequency semiconductor package of the fourth embodiment. 15 is a cross-sectional view taken along line AA in FIG. 14 of the high-frequency semiconductor package of the present embodiment, and FIG. 16 is a cross-sectional view taken along line BB in FIG. 14 of the high-frequency semiconductor package of the present embodiment.

  As shown in FIGS. 14 to 16, the high-frequency semiconductor package of the present embodiment is a plate-shaped bottom surface portion 20 made of metal and a storage space that is formed of a non-metal and stores circuit components therein. And a cap 12 having a shape obtained by cutting a columnar body having a portion 40 and having a bottom surface which is a rectangle whose vertex is formed by a curve, by a single plane perpendicular to the bottom surface. Further, the power semiconductor is housed in the housing portion 40, and the lead 30 is inserted into the side wall of the cap 12.

  The cap 12 is a figure obtained by replacing a rectangular or polygonal vertex with a curved line, that is, a column having a rectangular or polygonal base formed by a curved line at the bottom and cut by a single plane perpendicular to the bottom. Make. Therefore, the side surface of the cap 12 has a flat surface and a curved surface.

  The shape and material of the bottom surface portion 20 and the shape and material of the cap 10 are the same as those in the first embodiment. Moreover, it can replace with the bottom face part 20 and can also use the bottom face part 21 of 2nd Embodiment.

  14 to 16 show symmetrical high-frequency semiconductor packages, but the high-frequency semiconductor package of this embodiment also includes shapes that are not subject figures.

  As described above, in the high frequency semiconductor package of the present embodiment, the cap 12 has a shape having a flat surface and a curved surface on the side surface. For this reason, when the bottom face part 20 is thermally expanded, not only damage such as cracks is unlikely to occur in the cap 11, but also a plurality of parts can be stacked and stored before assembly, and the handling is easy.

(Fifth embodiment)
FIG. 17 is a top view of the high-frequency semiconductor package of the fifth embodiment. 18 is a cross-sectional view taken along line AA in FIG. 17 of the high-frequency semiconductor package of this embodiment, and FIG. 19 is a cross-sectional view taken along line BB in FIG. 17 of the high-frequency semiconductor package of this embodiment.

  As shown in FIGS. 17 to 19, the high-frequency semiconductor package of this embodiment includes a plate-shaped bottom surface portion 20 formed of metal and a storage space that is formed of a non-metal and stores circuit components therein. And a cap 13 having a shape obtained by cutting a column body having a portion 40 and having all sides and vertices replaced by curved surfaces by a single plane perpendicular to the bottom surface of the column body. Further, the power semiconductor is housed in the housing portion 40, and the lead 30 is inserted into the side wall of the cap 13.

  The cap 13 is formed, for example, by replacing all sides and vertices of a quadrangular column or polygonal column with a curved surface, and has a shape cut by one plane perpendicular to the bottom surface of the column. That is, this pillar body before cutting has a ridge formed by a curved surface. The cap 13 has a flat surface and a curved surface. In other words, the side and apex of the cap 13 other than the portion in contact with the bottom surface portion 20 are formed by curved surfaces.

  The shape and material of the bottom surface portion 20 and the shape and material of the cap 10 are the same as those in the first embodiment. Moreover, it can replace with the bottom face part 20 and can also use the bottom face part 21 of 2nd Embodiment.

  Although FIG. 17 to FIG. 19 illustrate a symmetrical high-frequency semiconductor package, the high-frequency semiconductor package of this embodiment includes a shape that is not a target graphic.

  As described above, in the high-frequency semiconductor package of the present embodiment, the cap 13 is formed with curved surfaces at the sides and vertices other than the portion in contact with the bottom surface portion 20. For this reason, even when the bottom surface portion 20 is thermally expanded not only in the horizontal direction but also in the vertical direction, the cap 13 is not easily damaged such as cracks, and can be stacked and stored before assembly. There is an effect that it is easy.

(Sixth embodiment)
FIG. 20 is a perspective view of the high-frequency semiconductor package of the sixth embodiment. 21 is a cross-sectional view taken along line AA in FIG. 20 of the high-frequency semiconductor package of the present embodiment, and FIG. 22 is a cross-sectional view taken along line BB in FIG. 20 of the high-frequency semiconductor package of the present embodiment.

  As shown in FIGS. 20 to 22, the high-frequency semiconductor package of this embodiment includes a plate-like bottom surface portion 20 formed of metal and a storage space that is formed of a non-metal and stores circuit components therein. And a cap 14 having a plurality of curved surfaces on a side surface facing the bottom surface portion 20. Further, the power semiconductor is housed in the housing portion 40, and the lead 30 is inserted into the side wall of the cap 14.

  As shown in FIGS. 20 to 22, the cap 14 can be configured to have a plurality of wavy curved surfaces on the side surface facing the bottom surface portion 20, for example, but is not limited to this shape.

  Further, the shape of the cap 14 before providing a plurality of curved surfaces may be the shape of the cap described in the first to fifth embodiments.

  The shape and material of the bottom surface portion 20 and the shape and material of the cap 10 are the same as those in the first embodiment. Moreover, it can replace with the bottom face part 20 and can also use the bottom face part 21 of 2nd Embodiment.

  20 to 22 show symmetrical high-frequency semiconductor packages, but the high-frequency semiconductor package of this embodiment also includes shapes that are not subject figures.

  As described above, in the high frequency semiconductor package of this embodiment, the cap 14 has a plurality of curved surfaces on the side surface facing the bottom surface portion 20. For this reason, there is an effect that the cap 13 is hardly damaged such as a crack even when the bottom surface portion 20 is largely thermally expanded.

(Seventh embodiment)
FIG. 23 is a perspective view of the high-frequency semiconductor package of the seventh embodiment. 24 is a cross-sectional view taken along line AA in FIG. 23 of the high-frequency semiconductor package of the present embodiment, and FIG. 25 is a cross-sectional view taken along line BB of FIG. 23 of the high-frequency semiconductor package of the present embodiment.

  As shown in FIGS. 23 to 25, the high-frequency semiconductor package of the present embodiment is a plate-shaped bottom surface portion 20 formed of metal and a storage space that is formed of non-metal and stores circuit components therein. And a cap 15 having a shape obtained by cutting a solid formed by only a curved surface by one plane. Further, the power semiconductor is housed in the housing portion 40, and the lead 30 is inserted into the side wall of the cap 15.

  The cap 15 has, for example, a shape obtained by cutting a sphere or an elliptical sphere with an arbitrary plane, but is not limited thereto, and may have a recess or a protrusion. The cap 15 may have a wave-like curved surface.

  The shape and material of the bottom surface portion 20 and the shape and material of the cap 10 are the same as those in the first embodiment. Moreover, it can replace with the bottom face part 20 and can also use the bottom face part 21 of 2nd Embodiment.

  Although FIG. 23 to FIG. 25 illustrate a symmetric high-frequency semiconductor package, the high-frequency semiconductor package of this embodiment includes a shape that is not a target graphic.

  As described above, in the high-frequency semiconductor package of the present embodiment, the cap 15 is formed by only a curved surface except for the portion in contact with the bottom surface portion 20. For this reason, there is an effect that the cap 15 is not easily damaged, such as cracking, regardless of the direction of thermal expansion of the bottom surface portion 20.

<Possibility in the embodiment of the present invention>
Note that the present invention is not limited to the above-described embodiment as it is, and can be embodied by modifying the constituent elements without departing from the scope of the invention in the implementation stage. In addition, various inventions can be formed by appropriately combining a plurality of components disclosed in the embodiment. For example, some components may be deleted from all the components shown in the embodiment. Furthermore, constituent elements over different embodiments may be appropriately combined.

1 is an external perspective view of a high-frequency semiconductor package according to a first embodiment. FIG. 2 is a cross-sectional view of the high-frequency semiconductor package of the first embodiment taken along line AA in FIG. FIG. 2 is a cross-sectional view of the high frequency semiconductor package of the first embodiment taken along line BB in FIG. 1. FIG. 3 is a top view when the cap of the high-frequency semiconductor package of the first embodiment is removed. It is an external appearance perspective view of the high frequency semiconductor package of 2nd Embodiment. It is a top view of the high frequency semiconductor package of 2nd Embodiment. It is a side view of the high frequency semiconductor package of 2nd Embodiment. It is a front view of the high frequency semiconductor package of 2nd Embodiment. FIG. 6 is a cross-sectional view taken along line AA in FIG. 5 of the high-frequency semiconductor package of the second embodiment. FIG. 6 is a cross-sectional view of the high frequency semiconductor package of the second embodiment taken along line BB in FIG. 5. It is an external appearance perspective view of the high frequency semiconductor package of 3rd Embodiment. FIG. 12 is a cross-sectional view of the high frequency semiconductor package of the third embodiment taken along line AA in FIG. 11. FIG. 12 is a sectional view taken along line BB in FIG. 11 of the high-frequency semiconductor package of the third embodiment. It is an external appearance perspective view of the high frequency semiconductor package of 4th Embodiment. FIG. 15 is a cross-sectional view taken along line AA in FIG. 14 of the high-frequency semiconductor package of the fourth embodiment. FIG. 15 is a sectional view taken along line BB in FIG. 14 of the high-frequency semiconductor package of the fourth embodiment. It is a top view of the high frequency semiconductor package of a 5th embodiment. FIG. 18 is a cross-sectional view taken along line AA in FIG. 17 of the high-frequency semiconductor package of the fifth embodiment. FIG. 18 is a sectional view taken along line BB in FIG. 17 of the high-frequency semiconductor package of the fifth embodiment. It is a perspective view of the high frequency semiconductor package of 6th Embodiment. FIG. 21 is a cross-sectional view taken along line AA in FIG. 20 of the high-frequency semiconductor package of the sixth embodiment. FIG. 21 is a cross-sectional view of the high-frequency semiconductor package of the sixth embodiment taken along line BB in FIG. 20. It is a perspective view of the high frequency semiconductor package of 7th Embodiment. FIG. 24 is a cross-sectional view taken along line AA in FIG. 23 of the high-frequency semiconductor package of the seventh embodiment. FIG. 24 is a cross-sectional view taken along the line BB in FIG. 23 of the high-frequency semiconductor package of the seventh embodiment.

Explanation of symbols

10, 11, 12, 13, 14, 15: cap,
20, 21: bottom portion,
30: Lead,
40: Storage section.

Claims (11)

A plate-shaped bottom surface formed of metal;
The outer wall that is formed of a nonmetal and has a storage portion that is a space for storing circuit components therein, and the outer wall surrounding the storage portion is cut into a cut surface when cut along the direction of the largest thermal expansion of the bottom surface portion. A cap including a curved surface;
A package for a high-frequency semiconductor, comprising: A plate-shaped bottom surface formed of metal;
It is formed of non-metal and has a storage portion that is a space for storing circuit components inside, and is cut along the outer wall surrounding the storage portion along at least two planes and the direction of the largest thermal expansion of the bottom surface portion. A cap including at least one curved surface on the cut surface ;
A package for a high-frequency semiconductor, comprising: A plate-shaped bottom surface formed of metal;
Formed by non-metal, which incorporates a housing portion which is a space for accommodating the circuit components, to name a shape obtained by cutting the cylindrical body bottom has a substantially circular shape by the bottom surface perpendicular one plane, the bottom surface When cut along the direction of the largest thermal expansion of the part, a cap including a curve on the cut surface ;
A package for a high-frequency semiconductor, comprising: A plate-shaped bottom surface formed of metal;
Formed by non-metal, it has a housing part which is a space for accommodating the circuit components therein, to name a conical shape whose side surface forms a curved surface, along the direction of larger most thermal expansion of the bottom portion And a cap including a curve on the cut surface ,
A package for a high-frequency semiconductor, comprising: A plate-shaped bottom surface formed of metal;
A rectangular or polygonal column that is formed of a non-metal and has a storage portion that is a space for storing circuit components therein and whose bottom surface is formed by a curved line is cut by a single plane perpendicular to the bottom surface. it greens the shape, taken along the direction of larger most thermal expansion of the bottom portion, and a cap including a curved cut surface,
A package for a high-frequency semiconductor, comprising: A plate-shaped bottom surface formed of metal;
Formed by a single plane that is made of non-metal and has a storage portion that is a space for storing circuit components inside, and in which all sides and vertices are replaced by curved surfaces, by a single plane perpendicular to the bottom surface of the column it greens and taken along the direction of larger most thermal expansion of the bottom portion, and a cap including a curved cut surface,
A package for a high-frequency semiconductor, comprising:   The high-frequency semiconductor package according to any one of claims 1 to 6, wherein the cap has a plurality of curved surfaces on a side surface facing the bottom surface portion of the cap. A plate-shaped bottom surface formed of metal;
Formed by non-metal, which incorporates a housing portion which is a space for accommodating the circuit components, to name a shape obtained by cutting the solid by one of the plane formed only by a curved surface, having the largest thermal expansion of the bottom portion A cap that includes a curve on the cut surface when cut along the direction ;
A package for a high-frequency semiconductor, comprising: A power semiconductor housed in the housing section;
A lead inserted through the cap;
Further characterized as having a high-frequency semiconductor package according to any one of claims 1 to 8. A power semiconductor housed in the housing section;
A lead inserted through the cap;
The non-metal is ceramics,
Characterized in that, high-frequency semiconductor package according to any one of claims 1 to 8. The package for a high-frequency semiconductor according to any one of claims 1 to 10 , wherein the bottom surface portion has a deficient portion that can be screwed.

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