JP5072894B2 - Vacuum processing apparatus and discharge electrode support method - Google Patents

Description

The present invention relates to a vacuum processing apparatus, and more particularly, to a vacuum processing apparatus and a discharge electrode supporting method for processing a substrate or a film-formed substrate using plasma.

  2. Description of the Related Art Conventionally, a discharge electrode used for film formation by a plasma CVD (Chemical Vapor Deposition) method needs to have a potential difference with a grounded counter electrode in order to generate plasma. In addition, the vacuum vessel supporting the discharge electrode is grounded to stabilize the potential distribution inside the vacuum vessel. Therefore, the discharge electrode is generally supported at a predetermined position in the vacuum vessel via a ceramic insulating material.

  Here, a film adheres to the inside of the vacuum vessel by the film forming process, and the number of film forming processes increases and the attached film becomes thick. Then, since the film also adheres to the insulating material that supports the discharge electrode, a ground fault occurs between the discharge electrode and the vacuum vessel in which the discharge electrode is grounded through the attached film, and the discharge electrode is in contact with the counter electrode. The potential difference changes between them, and sometimes the potential difference cannot be held. That is, there is a possibility that a uniform discharge is not performed between the discharge electrode and the counter electrode, the plasma distribution becomes non-uniform, and the film forming distribution becomes poor.

  In order to solve the above-mentioned problem, the support part that supports the discharge electrode uses a double tube formed of a ceramic material or the like, and the film is difficult to adhere to a part so as to suppress the ground fault due to the attached film. A method of applying a film cutting structure provided with a portion has been proposed (see, for example, Patent Document 1).

JP 2004-087581 A

  However, since the structure using the film cutting structure for supporting the discharge electrode described in Patent Document 1 is easily damaged and expensive, the ceramic material is simply increased in size to cope with the increase in size of the discharge electrode. There was a problem that it was difficult to convert.

The present invention has been made to solve the above-described problems, and provides a vacuum processing apparatus and a discharge electrode support method capable of stably holding a large discharge electrode while preventing a ground fault. For the purpose.

In order to achieve the above object, the present invention provides the following means.
A vacuum processing apparatus of the present invention extends along a substrate on which a film forming process is performed and is disposed to face the substrate, and is supplied with a high-frequency current, and sandwiches the discharge electrode with the substrate. An electrode support portion that is disposed at a position, extends along the discharge electrode, and is grounded to a common potential; and extends from the electrode support portion toward the discharge electrode and is connected to the electrode support portion. the discharge electrode asked to support, and, a protrusion having the discharge electrode and the electrode support portion which are electrically connected to conductive, and the electrode supporting plate which is grounded to the common potential, of the electrode supports A fixed portion that fixes one end to the electrode support plate and the other end of the electrode support portion are supported so as to be slidable in a direction approaching and separating from the fixed portion with respect to the electrode support plate. Sura to And de support part, is provided, the protruding portion is characterized by constituting a circuit having a predetermined inductance between the discharge electrodes and the electrode supports.

According to the present invention, since the discharge electrode is rigidly supported by, for example, a metal electrode support portion and a protruding portion, for example, it is damaged as compared with a case where it is supported by a member made of a ceramic material. It is difficult to stably support a large discharge electrode.
Furthermore, since the projecting portion constitutes a circuit having a predetermined inductance, the discharge electrode and the electrode support portion are in a non-conductive state with respect to the high-frequency current. Therefore, even if the number of film forming processes increases, changes in the film forming speed, film thickness distribution, etc. can be suppressed without causing a ground fault in the discharge electrode, and the stability to the film forming can be maintained.

In addition , for example, even if there is a difference between the thermal elongation amount of the electrode support plate constituted by the vacuum processing chamber wall surface such as a deposition prevention plate and the thermal elongation amount of the electrode support portion, When the slide support part slides with respect to the electrode support plate as a reference, the above-described difference in thermal elongation is absorbed. Therefore, the difference electrode support is deformed by the the heat expansion amount, relative positional relationship between the electrode support and the electrode supporting plate is changed, it does not change the distance between the substrate and the discharge electrodes. Further, it is possible to prevent damage to the electrode support portion and the discharge electrode due to the difference in the amount of thermal elongation.

  In the above invention, the electrode support portion is a member formed in a plate shape, and each of the fixed portion and the slide support portion has a direction in which the electrode support portion approaches and separates from the discharge electrode. It is desirable that a pair of first adjustment portions that are moved to each other and a second adjustment portion that moves the electrode support portion in a direction along the surface of the discharge electrode are provided.

  According to the present invention, since the non-conducting state between the discharge electrode and the electrode support portion with respect to the high-frequency current is maintained, the pair of first adjustment portions using a material that does not require insulation, such as metal, and The position and posture of the electrode support portion with respect to the discharge electrode can be easily adjusted by the second adjustment portion. Therefore, the positional relationship between the discharge electrode, the electrode support plate, and the substrate can be easily adjusted, and film forming characteristics such as film thickness distribution during film formation on the substrate can be improved.

  In the above invention, the electrode support portion is provided with a columnar shaft extending along the discharge electrode, and a plate attached to the shaft, and the fixing portion and the slide support portion Each includes a first adjustment unit that moves the electrode support unit in a direction toward and away from the discharge electrode, and a second adjustment unit that moves the electrode support unit in a direction along the surface of the discharge electrode. It is desirable that a third adjustment unit that rotates the shaft body around a central axis is provided.

  According to the present invention, by configuring the electrode support portion from the shaft body and the plate body attached to the shaft body, the plate body has a predetermined inductance in the circuit configured with the discharge electrode and the electrode support plate. Can have. Therefore, the non-conduction state between the discharge electrode and the electrode support portion with respect to the high-frequency current can be more reliably maintained.

  Further, since the non-conducting state between the discharge electrode and the electrode support portion with respect to the high-frequency current is maintained, the first adjusting portion, the second adjusting portion, The position and posture of the electrode support part with respect to the discharge electrode can be adjusted by the third adjustment part. Therefore, it becomes easier to adjust the positional relationship between the discharge electrode, the electrode support plate, and the substrate, and the film forming characteristics such as the film thickness distribution can be further improved.

  In the above invention, the projecting part is provided with a long hole extending from the fixed part toward the slide support part, and a fastening part inserted through the long hole and attached to the discharge electrode. Is desirable.

According to the present invention, even when there is a difference between the thermal elongation amount of the discharge electrode and the thermal elongation amount of the electrode support portion, the above-described heat is generated between the protruding portion extending from the electrode support portion and the discharge electrode. The difference in elongation is absorbed.
Specifically, the fastening portion attached to the discharge electrode moves inside the elongated hole formed in the protruding portion, so that the direction of thermal elongation can be managed in one direction. While preventing the positional relationship from being tilted compared to the initial adjustment state, the above-described difference in thermal elongation is absorbed.

  In the above invention, the plurality of protrusions are provided side by side from the fixed part toward the slide support part, and from the protrusion part on the fixed part side toward the protrusion part on the slide support part side, In order, it is desirable that the length of the long hole in the longitudinal direction becomes longer.

According to the present invention, since one end portion of the electrode support portion is fixed by the fixing portion and the other end portion is slidable, the difference in the above-described thermal elongation amount at the protruding portion on the slide support portion side. Is larger than the above-described difference in the amount of thermal elongation in the protruding portion on the fixed portion side. Therefore, by increasing the length in the longitudinal direction of the long hole from the fixed portion side protruding portion toward the slide supporting portion side protruding portion, the above-described difference in the amount of thermal elongation can be reliably absorbed.
Moreover, since it is not necessary to provide a long hole that is thinner than necessary, it is possible to suppress a decrease in strength due to the long hole processing of the protrusion.

  In the above invention, the protruding portion is fixed to the electrode support portion, and an end portion extends from the fixed portion toward the slide support portion and extends from the electrode support portion toward the discharge electrode. Is attached to the discharge electrode, extends along the surface of the discharge electrode, and extends from the slide support toward the fixed portion, and ends of the support-side protrusion. An electrode-side protruding portion formed with a groove portion into which the slit is inserted and a slit portion that extends from the slide support portion toward the fixing portion and into which the support pin is inserted. It is desirable to be provided.

According to the present invention, the discharge electrode is supported by inserting the end portion of the support portion side protrusion portion fixed to the electrode support portion into the groove portion of the electrode side protrusion portion fixed to the discharge electrode. For this reason, it is easy to remove and attach the discharge electrode in maintenance. Further, by inserting the support pin into the slit portion, the relative position in the direction intersecting the direction from the fixed portion toward the slide support portion is determined between the discharge electrode and the electrode support portion.
When there is a difference between the thermal elongation amount of the discharge electrode and the thermal elongation amount of the electrode support portion, the above-described thermal elongation is caused by the relative movement of the electrode side protrusion portion and the support portion side protrusion portion. The amount difference is absorbed.
Further, the discharge electrode supporting method according to the present invention includes a discharge electrode that extends along a substrate on which a film forming process is performed and is disposed so as to face the substrate, and to which a high-frequency current is supplied. An electrode support portion disposed at a position sandwiching the discharge electrode, extending along the discharge electrode and grounded to a common potential, and extending from the electrode support portion toward the discharge electrode, and the electrode support portion A conductive projection connected to the discharge electrode and electrically connected to the discharge electrode and the electrode support; an electrode support plate grounded to the common potential; and the electrode A fixed part that fixes one end of the support part to the electrode support plate, and a sliding movement of the other end part of the electrode support part toward and away from the fixed part with respect to the electrode support plate Possible A slide support for supporting, the provided the protruding portion, characterized by a circuit having a predetermined inductance between the discharge electrodes and the electrode supports.

According to the vacuum processing apparatus and the discharge electrode supporting method of the present invention, since the electrode support portion is supported by the projecting portion constituting the circuit having a predetermined inductance, the number of film-forming processes is increased for a large discharge electrode. However, it is possible to support the discharge electrode and the electrode support portion in a non-conducting state with respect to the high frequency current in a rigid and stable manner. In addition, since each position adjustment portion of the discharge electrode can be provided using a material that does not require insulation, such as a metal material, it is easier to adjust the positional relationship between the discharge electrode, the electrode support plate, and the substrate. Thus, the film forming characteristics such as the film thickness distribution can be further improved.

It is the schematic which shows the structure of the film forming apparatus of reference embodiment of this invention, and is the figure seen from the side surface of the film forming apparatus. It is a schematic diagram explaining arrangement | positioning of the discharge electrode of the film forming apparatus of FIG. It is a schematic diagram explaining the electric power feeding to the discharge electrode of FIG. It is a schematic diagram explaining the structure in the vicinity of the discharge electrode of FIG. It is a schematic diagram explaining the structure of the lower side fixing | fixed part and upper side fixing | fixed part of FIG. FIG. 5 is a cross-sectional view illustrating the configuration of a lower fixing portion and an upper fixing portion in FIG. 4. It is a schematic diagram explaining the structure in the vicinity of the discharge electrode which concerns on the 1st Embodiment of this invention. It is a schematic diagram explaining the structure of the lower side fixing | fixed part of FIG. 7, and a slide support part. FIG. 8 is a cross-sectional view illustrating the configuration of the lower fixing portion and the slide support portion in FIG. 7. It is a schematic diagram explaining the structure of the periphery of the electrode support part which concerns on the 2nd Embodiment of this invention. It is a schematic diagram explaining the structure of the periphery of the electrode support part which concerns on the 3rd Embodiment of this invention. It is a schematic diagram explaining the structure of the projection part arrange | positioned in the vicinity of the lower side fixing | fixed part of FIG. It is a schematic diagram explaining the structure of the projection part arrange | positioned in the vicinity of the slide support part of FIG. It is a schematic diagram explaining the periphery structure of the electrode support part which concerns on the 4th Embodiment of this invention. It is the elements on larger scale explaining the structure of the protrusion part of FIG. It is a schematic diagram explaining fitting with the support part side protrusion part of FIG. 15, and an electrode side protrusion part.

[ Reference embodiment]
Hereinafter, a film forming apparatus according to a reference embodiment of the present invention will be described with reference to FIGS.
FIG. 1 is a schematic view showing the configuration of the film forming apparatus of the present embodiment, as viewed from the side of the film forming apparatus. FIG. 2 is a schematic diagram for explaining the arrangement of the discharge electrodes of the film forming apparatus of FIG. FIG. 3 is a schematic diagram for explaining power feeding to the discharge electrode of FIG.

  In this embodiment, the present invention relates to an amorphous silicon used for an amorphous solar cell, a microcrystalline solar cell, a TFT for liquid crystal display (Thin Film Transistor), etc., on a large-area substrate having a side exceeding 1 m. Description will be made by applying to a film forming apparatus (vacuum processing apparatus) 1 capable of performing a film forming process of a film made of crystalline silicon such as microcrystalline silicon, silicon nitride or the like.

As shown in FIGS. 1 and 2, the film forming apparatus 1 includes a film forming chamber 2 that is a vacuum container, a counter electrode 3 that is a conductive flat plate, and a soaking that equalizes the temperature distribution of the counter electrode 3. A plate 4, a soaking plate holding mechanism 5 that holds the soaking plate 4 and the counter electrode 3, a discharge electrode 6 that generates plasma between the counter electrode 3, a plasma generation range, and a range in which a film is formed. A deposition preventing plate (electrode support plate) 7 to be restricted, a holding unit 8 that supports the deposition preventing plate 7, coaxial power feeding units 9a and 9b that supply high-frequency power to the discharge electrode 6, and matching units 10a and 10b, and film formation A high vacuum exhaust part 11 and a low vacuum exhaust part 12 for exhausting the gas in the chamber 2, and a table 13 for holding the film forming chamber 2 are provided.
In addition, in this figure, the structure regarding gas supply is abbreviate | omitted.

The film forming chamber 2 is a vacuum container in which a microcrystalline silicon film or the like is formed on the substrate S. The film forming chamber 2 is held on the table 13 with an angle α from the vertical direction. The inclination angle α is a predetermined angle within a range of 7 ° to 12 ° with respect to the vertical direction.
An example of the substrate S is a translucent glass substrate having a vertical and horizontal size of 1.4 m × 1.1 m and a thickness of 3.5 mm to 4.5 mm.

  By tilting and holding the film forming chamber 2, the normal line of the film forming surface of the substrate S in the counter electrode 3 is directed upward (Z direction) by an angle α with respect to the horizontal direction (X direction). By slightly tilting the substrate S from the vertical as described above, it is possible to hold the substrate S with less effort by using the weight of the substrate S while suppressing an increase in the installation space of the apparatus. Further, the substrate S and the counter electrode 3 can be held. It is preferable that the adhesiveness of the substrate S can be improved and the temperature distribution and potential distribution of the substrate S can be made uniform.

The counter electrode 3 is a conductive plate made of a non-magnetic material having holding means (not shown) that can hold the substrate S. When performing self-cleaning, it is preferable to have fluorine radical resistance, and it is desirable to use a plate of nickel alloy, aluminum, or aluminum alloy.
The counter electrode 3 is an electrode (for example, a ground side electrode) facing the discharge electrode 6. One surface of the counter electrode 3 is in close contact with the surface of the soaking plate 4, and the other surface is in close contact with the surface of the substrate S during film formation to form a substrate table.

The soaking plate 4 circulates a temperature-controlled heat medium inside or incorporates a temperature-controlled heater to control its own temperature, and has a generally uniform temperature as a whole, It has a function of making the temperature of the counter electrode 3 in contact uniform at a predetermined temperature.
The above heat medium is a non-conductive medium, and a highly heat conductive gas such as hydrogen or helium, a fluorine-based inert liquid, an inert oil, pure water, or the like can be used as the heat medium. In particular, the use of a fluorine-based inert liquid (for example, trade name: Galden, F05, etc.) is preferable because the pressure does not increase even in the range of 150 ° C. to 250 ° C. and control is easy.

The soaking plate holding mechanism 5 holds the soaking plate 4 and the counter electrode 3 so as to be substantially parallel to the side surface of the film forming chamber 6 (the right side surface in FIG. 1). The electrode 3 and the substrate S are held so as to be able to approach and separate from the discharge electrode 6.
The soaking plate holding mechanism 5 moves the soaking plate 4 and the like close to the discharge electrode 6 during film formation, and positions the substrate S away from the discharge electrode 6 by a predetermined value within a range of, for example, 3 mm to 30 mm. it can.

  The deposition preventing plate 7 is held in a state of being grounded to a common potential in the vacuum container of the film forming chamber 2, and limits the range in which the film is formed by suppressing the range in which the plasma spreads. In the case of the present embodiment, as shown in FIG. 1, no film is formed on the wall on the back side (opposite side of the substrate S) of the deposition preventing plate 7 inside the film forming chamber 2.

As shown in FIG. 1, the holding portion 8 is a member that extends vertically inward from the side surface (the left side surface in FIG. 1) of the film forming chamber 2. The holding unit 8 is coupled to the deposition preventing plate 7 and holds the deposition preventing plate 7 so as to cover the space on the discharge electrode 6 opposite to the counter electrode 3.
Here, the deposition preventing plate 7 also has a function as an electrode support plate grounded to a common potential. As will be described later, the discharge electrode 6 is maintained in a non-conductive state against the deposition plate 7 and the high-frequency current, and the discharge electrode 6 is held against the side surface of the film forming chamber 2 (the left side surface in FIG. 1). Are held almost parallel.

  Regardless of the presence or absence of the deposition prevention plate 7, the electrode support plate is not the deposition prevention plate 7, but the side surface (wall surface) of the film forming chamber 2 grounded to a common potential is used to connect the discharge electrode 6. You may make it maintain and hold | maintain a non-conduction state with respect to a high frequency current.

The high vacuum evacuation unit 11 is a vacuum pump for high vacuum evacuation that further exhausts the gas in the film forming chamber 2 that has been roughly evacuated to place the film forming chamber 2 in a high vacuum. The valve 14 is a valve that opens and closes the path between the high vacuum exhaust unit 11 and the film forming chamber 2.
The low vacuum evacuation unit 12 is a vacuum pump for roughing evacuation that first exhausts the gas in the film forming chamber 2 to make the film forming chamber 2 low in vacuum. The film formation exhaust gas at the time of film formation is exhausted from the low vacuum exhaust part 12. The valve 15 opens and closes the path between the low vacuum exhaust unit 12 and the film forming chamber 2.

  The table 13 holds the film forming chamber 2 via a holding unit 16 disposed on the upper surface. A region in which the low vacuum evacuation unit 12 is disposed is formed inside the table 13. The low vacuum evacuation unit 12 does not necessarily have to be inside the table 13, and may be installed on the machine side, or may be evacuated from the upper part of the film forming chamber 2 in the same manner as the high vacuum evacuation unit 11.

As shown in FIG. 2, for example, eight discharge electrodes 6 are provided in the film forming chamber 2. The discharge electrode 6 extends in the Y direction and has two horizontal electrodes arranged vertically in parallel with each other, and a plurality of plate-like electrodes arranged in the Z direction and arranged in parallel with each other between the horizontal electrodes. The vertical electrode is combined.
As described above, the discharge electrode 6 does not necessarily have to be divided into eight, and may be a number other than eight or one that is not divided.

  In FIG. 2, a matching unit 10a, a high-frequency power transmission path 21a, a coaxial power feeding section 9a, a heat medium supply pipe 22a, and a raw material gas pipe 23a are provided on the power supply point side above the discharge electrode 6. In FIG. 2, a matching unit 10b, a high-frequency power transmission line 21b, a coaxial power feeding part 9b, a heat medium supply pipe 22b, and a raw material gas pipe 23b are provided on the feeding point side below the discharge electrode. Yes. Matching units 10a and 10b, high-frequency power transmission lines 21a and 21b, coaxial power feeding sections 9a and 9b, heat medium supply pipes 22a and 22b, and source gas pipes 23a and 23b are divided into discharge electrodes 6 (in FIG. 2). (8 discharge electrodes) may be provided individually.

The coaxial power supply portions 9a and 9b are provided with a substantially cylindrical coaxial shield 9S disposed coaxially with the high-frequency power transmission lines 21a and 21b, which are core wires, via an insulator.
The coaxial shield 9S is a member that is made of a conductive material and is grounded.

  In the vicinity of the feeding point of the discharge electrode 6, a source gas pipe 23 a is connected. Similarly, a raw material gas pipe 23 b is connected in the vicinity of the feeding point of the discharge electrode 6. The source gas is supplied to the discharge electrode 6 from the source gas pipes 23a and 23b, and the discharge electrode 6 discharges the source gas substantially uniformly to the counter electrode 3 side (the right side in FIG. 2).

  As shown in FIGS. 2 and 3, high-frequency power is supplied from the high-frequency power source 25a to the upper feeding point of the discharge electrode 6, and high-frequency power is supplied from the high-frequency power source 25b to the lower feeding point. .

FIG. 4 is a schematic diagram illustrating a configuration in the vicinity of the discharge electrode of FIG. In FIG. 4, two discharge electrodes 6 are shown as representatives, and the number of discharge electrodes 6 is not limited to the number shown in FIG.
Further, between the discharge electrode 6 and the deposition preventing plate 7, the electrode supporting portion 31 that is held on the deposition preventing plate 7 and is also electrically connected to the deposition preventing plate 7, and the discharge electrode 6 are supported. A projecting portion 41 is provided.

  As shown in FIGS. 3 and 4, the electrode support portion 31 supports the discharge electrode 6 from the deposition plate 7 side together with the projecting portion 41, and has a conductive metal material extending along the discharge electrode 6. For example, aluminum, an aluminum alloy, a stainless steel (such as SUS304), or a nickel alloy (such as Inconel) can be used as the metal material. Accordingly, the electrode support portion 31 can have sufficient rigidity and strength to hold the discharge electrode 6.

  As shown in FIG. 4, the electrode support portion 31 is provided with a lower fixing portion 32 and an upper fixing portion 33 that support the electrode support portion 31, and a plurality of protruding portions 41. A simple metal material or the like can be used.

FIG. 5 is a schematic diagram illustrating the configuration of the lower fixing portion and the upper fixing portion in FIG. FIG. 6 is a cross-sectional view illustrating the configuration of the lower fixing portion and the upper fixing portion in FIG. 4.
The lower fixing portion 32 supports the lower end portion of the electrode support portion 31 and allows the relative position of the electrode support portion 31 to be adjusted with respect to the deposition preventing plate 7.
The lower fixing portion 32 is disposed at a lower end portion (lower end portion in FIG. 4) of the electrode support portion 31.

  As shown in FIGS. 5 and 6, the lower fixing portion 32 has a pair of first adjustments for adjusting the arrangement position of the electrode support portion 31 in the X-axis direction, that is, in the direction in which the electrode supporting portion 31 is moved closer to and away from the deposition preventing plate 7. 1 adjustment part 34X and 2nd adjustment part 35Y which adjusts the arrangement position of the electrode support part 31 to a Y-axis direction are provided.

The upper fixing portion 33 supports the upper end portion of the electrode support portion 31 and allows the relative position of the electrode support portion 31 to be adjusted with respect to the deposition preventing plate 7.
The upper fixing portion 33 is disposed at an upper end portion (upper end portion in FIG. 4) of the electrode support portion 31.

  As shown in FIGS. 5 and 6, the upper fixing portion 33 has a pair of first adjustments for adjusting the arrangement position of the electrode support portion 31 in the X-axis direction, that is, in the direction of approaching and separating from the deposition preventing plate 7. An adjustment unit 34X and a second adjustment unit 35Y that adjusts the arrangement position of the electrode support unit 31 in the Y-axis direction are provided.

The first adjustment portion 34X extends along the X-axis direction, and is fixed to the electrode support portion 31 and the screw portion 34X1 supported by the lower fixing portion 32 and the upper fixing portion 33 so as to be rotatable around the central axis. Nut part 34X2. The head of the screw portion 34X1 is disposed so as to be exposed to the discharge electrode 6 side (+ X axis direction).
As shown in FIG. 5, the pair of first adjustment portions 34 </ b> X in the lower fixing portion 32 and the upper fixing portion 33 are arranged in the vicinity of both the lower side and the upper end portions of the electrode support portion 31 side by side in the Y-axis direction. Yes. Therefore, the pair of first adjustment portions 34X can adjust the orientation of the surface of the electrode support portion 31 by rotating the electrode support portion 31 around the virtual center axis extending along the Z-axis direction.

  The second adjustment portion 35Y extends along the X-axis direction, and has a pinion gear portion 35Y1 disposed on a shaft body rotatably supported around the central axis on the lower fixing portion 32 and the upper fixing portion 33, and an electrode The rack gear portion 35Y2 extends along the Y-axis direction fixed to the support portion 31. The head of the shaft body provided with the pinion gear portion 35Y1 is arranged so as to be exposed to the discharge electrode 6 side (+ X axis direction).

  Thus, when the film forming chamber 2 is opened, the head used for adjustment by the first adjustment unit 34X and the second adjustment unit 35Y can be easily accessed, and the arrangement of the electrode support unit 31 The position and posture can be easily adjusted.

  Further, in the first adjustment part 34X, the arrangement position and the like of the electrode support part 31 are adjusted by the screw part 34X1 and the nut part 34X2, and in the second adjustment part 35Y, the arrangement position and the like of the electrode support part 31 by the rack and pinion are adjusted. Because of the effect of the gear ratio, the screw portion 34X1 and the pinion gear portion 35Y1 are prevented from rotating due to the external force acting on the electrode support portion 31 and the arrangement position of the electrode support portion 31 is prevented from changing due to the effect of the gear ratio.

That is, the number of teeth between the screw portion 34X1 and the nut portion 34X2 is different in the first adjustment portion 34X, and the number of teeth between the rack gear portion 35Y2 and the pinion gear portion 35Y1 is different in the second adjustment portion 35Y. Due to the external force acting on the electrode support portion 31, the arrangement position of the electrode support portion 31 is not easily changed.
When a large external force is applied to the electrode support portion 31, a simple anti-rotation lock mechanism is provided on the screw portion 34X1 and the pinion gear portion 35Y1 in order to further improve the reliability in suppressing the arrangement position fluctuation. May be.

As shown in FIG. 4, the electrode support portion 31 and the protruding portion 41 support the discharge electrode 6 and are plate-like members formed from a conductive metal material.
The electrode support 31 may be a metal plate having a plate thickness of about 3 mm to about 6 mm and a width (dimension in the Y-axis direction) of about 20 mm to about 50 mm. The protrusion 41 may be a metal plate having a width (dimension in the Y-axis direction) of about 20 mm to about 50 mm and a plate thickness of about 2 mm to about 4 mm. Accordingly, the electrode support portion 31 and the protruding portion 41 can have sufficient rigidity and strength to hold the discharge electrode 6.

The protruding portions 41 extend from the electrode support portion 31 toward the discharge electrode 6 (along the X-axis direction) and are arranged at substantially equal intervals in the Z-axis direction.
Furthermore, as shown in FIG. 3, the protrusion 41 has a predetermined inductance in a circuit configured with the electrode support 31 and the discharge electrode 6.

  A loop circuit 26 arranged coaxially between the high-frequency power supply transmission lines 21a and 21b outside the film forming chamber 2 has a short-circuit line having a length that is an integral multiple of the wavelength in the transmission line with respect to the voltage frequency of the high-frequency power. And an inductor or a capacitor respectively connected to both ends of the short-circuit line. In response to the supply of high-frequency power from the high-frequency power supplies 25 a and 25 b to the discharge electrode 6, only the high-frequency power reflected by the discharge electrode 6 is introduced into the loop circuit 26, and the reflected power is reduced by the loop circuit 26.

That is, the electrode support portion 31 and the protruding portion 41 form an electrical closed loop by the loop circuit 26, and cancel the reflected waves reflected from both end portions in opposite phases at the end portion of the loop circuit. Thus, the reflected power can be reduced.
The loop circuit 26 is particularly effective for reducing the reflected power when the phase of the high frequency power changes.

As an X direction dimension of the protrusion part 41, the case where the distance between the electrode support part 31 and the discharge electrode 6 is about 30 mm to about 70 mm, More preferably, it is about 40 mm to about 60 mm.
By doing so, it is possible to realize the formation of an inductance component of several tens of nH to several hundreds of nH in the protruding portion 41, and maintain and maintain a non-conductive state with respect to the high-frequency current with the discharge electrode 6. can do.

  On the other hand, it is desirable to adjust the inductance value in the protrusion 41 so that the reflected wave of the supplied high-frequency current in the discharge electrode 6 is reduced.

Furthermore, it is desirable that the distance between the discharge electrode 6 and the electrode support 31 is wider than the distance between the substrate S and the discharge electrode 6.
By doing in this way, compared with the case where the distance between the discharge electrode 6 and the electrode support part 31 is narrower than the distance between the board | substrate S and the discharge electrode 6, the value of an inductance becomes large, and discharge Discharge between the electrode 6 and the electrode support portion 31 is prevented. As a result, it is possible to prevent a decrease in plasma intensity between the counter electrode 3 and the discharge electrode 6 and a non-uniform plasma distribution.

  Next, the operation of the electrode support portion 31 and the protruding portion 41 in the film forming apparatus 1 having the above configuration will be described.

As shown in FIG. 3 to FIG. 6, the electrode support portion 31 and the protrusion 41 supported by the deposition preventing plate 7 support the discharge electrode 6 from the deposition preventing plate 7 side.
At this time, the relationship of the relative position between the discharge electrode 6 and the electrode support part 31 is adjusted by the 1st adjustment part 34X and the 2nd adjustment part 35Y.

Specifically, by operating all the first adjustment portions 34X of the lower fixing portion 32 and the upper fixing portion 33 by the same amount, the electrode support portion 31 is translated in the X-axis direction with respect to the discharge electrode 6. Is done.
On the other hand, by operating all the second adjustment parts 35Y of the lower fixing part 32 and the upper fixing part 33 by the same amount, the electrode support part 31 is translated in the Y-axis direction with respect to the discharge electrode 6. The

  Further, the adjustment amount in the first adjustment unit 34X in the + Y axis direction (right side in FIG. 5) in the lower fixing unit 32 and the upper fixing unit 33 and the first adjustment unit 34X in the −Y axis direction (left side in FIG. 5). By making the adjustment amount different, the electrode support portion 31 is rotationally moved around the Z axis with respect to the discharge electrode 6, and the orientation of the formation surface of the electrode support portion 31 and the planar direction of the deposition preventing plate 7 can be adjusted.

  The adjustment of the second adjustment portion 35Y causes the screw portion 34X1 of the first adjustment portion 34X to move in the Y direction together with the electrode support portion 31, so that the holding portion of the screw portion 34X1 is a long hole in the Y direction. It is preferable.

  When a high frequency current is supplied to the discharge electrode 6, discharge is started between the discharge electrode 6 and the counter electrode 3, and plasma is generated. At this time, as shown in FIG. 3, the protrusion 41 has a predetermined inductance in the circuit configured with the electrode support 31 and the discharge electrode 6, so that the high-frequency current supplied to the discharge electrode 6 is There is no ground fault by flowing to 31.

  According to the above configuration, the discharge electrode 6 is formed of a metal material having rigidity and high toughness and is supported by the electrode support portion 31 and the protruding portion 41 that are grounded to a common potential. Compared with the case where it is supported by the formed member, the large-sized discharge electrode 6 can be stably supported with little damage.

  Furthermore, since the protruding portion 41 constitutes a circuit having a predetermined inductance component, the discharge electrode 6 and the electrode support portion 31 are maintained in a non-conductive state with respect to the high-frequency current. Therefore, it is possible to prevent the discharge electrode 6 from being grounded. Therefore, even if the number of film forming processes increases and a film adheres to the electrode support portion 31 or the like, the discharge electrode does not cause a ground fault, and changes in the film forming speed, the film thickness distribution, etc. can be suppressed. Can maintain sex.

  Since the electrode support portion 31 is grounded at a common potential, for example, by using a material that does not require insulation, such as a metal material, the pair of first adjustment portion 34X and second adjustment portion 35Y are configured. The position and posture of the electrode support 31 with respect to the discharge electrode 6 can be adjusted. Therefore, it becomes easy to adjust the positional relationship among the discharge electrode 6, the electrode support portion 31, the deposition plate 7, and the substrate S, and the film forming characteristics such as the film thickness distribution during film formation on the substrate can be improved. it can.

First Embodiment
Next, a first embodiment of the present invention will be described with reference to FIGS.
The basic configuration of the film forming apparatus of the present embodiment is similar to the reference embodiment, the reference embodiment, the configuration for fixing the electrode supporting portion is different. Therefore, in this embodiment, only the structure which fixes an electrode support part is demonstrated using FIGS. 7-9, and description of other components is abbreviate | omitted.

FIG. 7 is a schematic diagram illustrating a configuration in the vicinity of the discharge electrode according to the present embodiment. In FIG. 7, two discharge electrodes 6 are shown as representatives, and the number of discharge electrodes 6 is not limited to the number shown in FIG. FIG. 8 is a schematic diagram illustrating the configuration of the lower fixing portion and the slide support portion in FIG. FIG. 9 is a cross-sectional view illustrating the configuration of the lower fixing portion and the slide support portion in FIG.
In addition, the same code | symbol is attached | subjected to the component same as reference embodiment, and the description is abbreviate | omitted.

  As shown in FIGS. 7 to 9, the electrode support part 131 in the film forming apparatus (vacuum processing apparatus) 101 includes a lower fixing part 32 and a slide support part 133 that support the electrode support part 131, and a plurality of protrusions. 41 is provided.

The electrode support 131 in the present embodiment is a plate-like member having a plate thickness of about 3 mm to about 6 mm, a width (dimension in the Y-axis direction) of about 20 mm to about 50 mm, and having strength. . Accordingly, the electrode support part 131 can have sufficient rigidity and strength to hold the discharge electrode 6.
For example, the electrode support portion 131 may be provided with a rib for ensuring strength on the surface facing the deposition preventing plate 7, and is not particularly limited.

The slide support portion 133 supports the end portion of the electrode support portion 131 so as to be slidable in the Z direction with respect to the deposition preventing plate 7 and allows the relative position of the electrode support portion 131 to be adjusted with respect to the discharge electrode 6. It is.
The slide support part 133 is disposed at an upper end part (an upper end part in FIG. 7) of the electrode support part 131.

  As shown in FIGS. 8 and 9, the slide support 133 has a pair of first adjustments for adjusting the arrangement position of the electrode support 131 in the X-axis direction, that is, in the direction of approaching and separating from the discharge electrode 6. A portion 34X, a second adjustment portion 35Y for adjusting the arrangement position of the electrode support portion 131 in the Y-axis direction, a slide mechanism 136 that slidably supports the upper end portion of the electrode support portion 131 on the deposition preventing plate 7, Is provided.

  In the present embodiment, the slide mechanism 136 includes a rail portion 136A disposed on the adhesion-preventing plate 7 extending in the Z-axis direction, and a groove portion 136B that is fitted to the rail portion 136A and slides. Although applied and demonstrated, other well-known structure may be used and it does not specifically limit.

Next, the operation of the electrode support portion 131 and the protruding portion 41 in the film forming apparatus 101 having the above configuration will be described.
Note that the adjustment and the like of the arrangement position and orientation of the electrode support portion 131 by the first adjustment portion 34X and the second adjustment portion 35Y are the same as those in the reference embodiment, and thus the description thereof is omitted.

  Here, when the discharge is started between the discharge electrode 6 and the counter electrode 3, the temperature of the deposition preventing plate 7 and the electrode support portion 131 rises, and thermal expansion occurs. Between the deposition preventing plate 7 and the electrode support portion 131, there is a difference in thermal elongation due to a difference in temperature and a difference in expansion coefficient.

  The difference in the amount of thermal elongation appears as a difference in the amount of thermal elongation in the + Z-axis direction with the lower fixing portion 32 as a base point, and is absorbed by the slide mechanism 136 in the slide support portion 133. Specifically, the amount of thermal expansion while restraining the movement in the X-axis direction and the Y-axis direction by the relative movement between the rail portion 136A extending along the + Z-axis direction in the slide mechanism 136 and the groove portion 136B. The difference is absorbed.

  According to the above configuration, even if there is a difference between the thermal elongation amount of the deposition preventive plate 7 and the thermal elongation amount of the electrode support portion 131, the slide support portion 133 is relative to the deposition preventive plate 7. By sliding, the above-described difference in thermal elongation is absorbed. Therefore, the electrode support 131 is deformed due to the difference in the amount of thermal expansion, the relative positional relationship between the discharge electrode 6 and the deposition preventing plate 7 is changed, and the distance between the substrate S and the discharge electrode 6 is not changed. In addition, the electrode support 131 and the discharge electrode 6 can be prevented from being damaged by the difference in the amount of thermal elongation.

Second Embodiment
It will now be described with reference to FIG. 10, a second embodiment of the present invention.
The basic configuration of the film forming apparatus of the present embodiment is similar to the reference embodiment, the reference embodiment, the configuration of the periphery of the electrode supporting portion is different. Therefore, in the present embodiment, only the configuration around the electrode support portion will be described with reference to FIG. 10, and description of other configurations and the like will be omitted.
FIG. 10 is a schematic diagram illustrating a configuration around the electrode support portion according to the present embodiment.
In addition, the same code | symbol is attached | subjected to the component same as reference embodiment, and the description is abbreviate | omitted.

  As shown in FIG. 10, the electrode support portion 231 in the film forming apparatus (vacuum processing apparatus) 201 includes a shaft body 231 </ b> R formed in a columnar shape, a flat plate portion (plate body) 231 </ b> P formed in a flat plate shape, A lower fixed portion 232 and an upper support portion (not shown) that support the electrode support portion 231, and a plurality of protruding portions 41 are provided.

  As shown in FIG. 10, the shaft body 231 </ b> R is a columnar member extending along the Z axis, and is supported by the lower fixing portion 232 and the upper support portion so as to be rotatable around the central axis. is there. Furthermore, the shaft body 231R is a member to which the flat plate portion 231P is attached.

The flat plate portion 231 </ b> P is attached to the shaft body 231 </ b> R and is also attached to the protruding portion 41. The flat plate portion 231P is formed in a metallic flat plate (thin plate) shape having a plate thickness of about 1 mm to about 6 mm, for example.
In this way, the flat plate portion 231P has an inductance component in the circuit configured with the discharge electrode 6 and the deposition preventing plate 7.

  As shown in FIG. 10, the lower fixing portion 232 includes a first adjustment portion 34 </ b> X that adjusts the arrangement position of the electrode support portion 231 in the X-axis direction, that is, the direction in which the electrode support portion 231 approaches and separates from the discharge electrode 6. A second adjustment unit 35Y that adjusts the position of the electrode support unit 231 in the Y-axis direction and a third adjustment unit 236Z that adjusts the attitude of the electrode support unit 231 around the Z-axis (center axis) are provided. Yes.

The first adjustment portion 34X extends along the X-axis direction, and is fixed to the lower fixing portion 232 and the upper fixing portion, the screw portion 34X1 rotatably supported around the central axis, and the third adjustment portion 236Z. Nut part 34X2. The head of the screw portion 34X1 is disposed so as to be exposed to the discharge electrode 6 side (+ X axis direction).
By doing so, when the screw portion 34X1 is rotated, the nut portion 34X2 and the third adjustment portion 236Z move along the screw portion 34X1, and the arrangement position of the electrode support portion 231 is adjusted.

The second adjustment portion 35Y extends along the X-axis direction, and is provided with a pinion gear portion 35Y1 disposed on a shaft body rotatably supported around the central axis on the lower fixing portion 232 and the upper fixing portion, and a third The rack gear portion 35Y2 extends along the Y-axis direction and is fixed to the adjusting portion 236Z. The head of the pinion gear portion 35Y1 is disposed so as to be exposed to the discharge electrode 6 side (+ X axis direction).
In this way, when the pinion gear portion 35Y1 is rotated, the rack gear portion 35Y2 and the third adjustment portion 236Z move in the Y-axis direction, and the arrangement position of the electrode support portion 231 is adjusted.

  The third adjustment portion 236Z extends along the X-axis direction, and is disposed on the outer periphery of the shaft body 231R and the worm portion 236Z1 that is rotatably supported around the central axis by the lower fixing portion 232 and the upper fixing portion. A worm wheel portion 236Z2 and a bearing portion 236Z3 that rotatably supports the shaft body 231R around the Z axis (θ direction) are provided.

  As described above, the third adjustment portion 236Z rotates the shaft body 231R in the θ direction, thereby making the set of the screw portion 34X1 and the nut portion 34X2 of the first adjustment portion 34X that moves the electrode support portion 231 in the X-axis direction. This makes it easier to adjust the arrangement position and posture of the electrode support portion 231.

  Next, adjustment of the arrangement position and posture of the electrode support portion 231 by the first adjustment portion 34X, the second adjustment portion 35Y, and the third adjustment portion 236Z in the film forming apparatus 201 having the above configuration will be described.

By operating the first adjustment part 34X such as the lower fixing part 232 by the same amount as the first adjustment part 34X of the upper fixing part, the discharge electrode 6 is translated in the X-axis direction with respect to the discharge electrode 6. .
On the other hand, by operating the second adjustment portion 35Y such as the lower fixing portion 32 by the same amount as the second adjustment portion 35Y of the upper fixing portion, the electrode support portion 231 can move in the Y axis direction with respect to the discharge electrode 6. Translated to.

Further, by operating the third adjustment portion 236Z such as the lower fixing portion 232 by the same amount as the third adjustment portion 236Z of the upper fixing portion, the electrode support portion 231 can move θ around the Z axis with respect to the discharge electrode 6. It is rotated in the direction. Thereby, the parallelism with respect to the counter electrode 3 in the discharge electrode 6 is easily adjusted.
Note that the third adjustment unit 236Z of the upper fixing unit may have only the rotary bearing function, and the adjustment operation may be performed only by the third adjustment unit 236Z of the lower fixing unit 232.

  According to said structure, the position and attitude | position of the electrode support part 231 with respect to the discharge electrode 6 can be adjusted with the 1st adjustment part 34X, the 2nd adjustment part 35Y, and the 3rd adjustment part 236Z. Therefore, it becomes easier to adjust the positional relationship among the discharge electrode 6, the electrode support portion 231, the deposition preventing plate 7, and the substrate S, and the film forming characteristics such as the film thickness distribution can be further improved.

  Furthermore, by configuring the electrode support portion 231 from the shaft body 231R and the flat plate portion 231P attached to the shaft body 231R, the flat plate portion 231P has an inductance in a circuit configured with the discharge electrode 6 and the deposition preventing plate 7. Can have ingredients. Therefore, the discharge electrode 6 and the electrode support part 231 are maintained in a non-conductive state with respect to the high-frequency current, and can prevent the discharge electrode 6 from being grounded. Thereby, even if the number of film forming processes increases and a film adheres to the electrode support part 231 or the like, changes in the film forming speed, film thickness distribution, etc. can be suppressed without causing the discharge electrode to be grounded. Stability can be maintained.

[ Third Embodiment]
Next, a third embodiment of the present invention will be described with reference to FIGS.
The basic configuration of the film forming apparatus of the present embodiment is similar to the reference embodiment, the reference embodiment, the configuration of the periphery of the electrode supporting portion is different. Therefore, in the present embodiment, only the configuration around the electrode support portion will be described with reference to FIGS. 11 to 13, and description of other configurations and the like will be omitted.
FIG. 11 is a schematic diagram illustrating a configuration around the electrode support portion according to the present embodiment.
In addition, the same code | symbol is attached | subjected to the component same as reference embodiment, and the description is abbreviate | omitted.

  As shown in FIG. 11, the electrode supporting portion 331 in the film forming apparatus (vacuum processing apparatus) 301 is provided with a lower fixing portion 32 and a slide supporting portion 133 that support the electrode supporting portion 331, and a plurality of protruding portions 341. It has been.

FIG. 12 is a schematic diagram illustrating the configuration of the protrusions disposed in the vicinity of the lower fixing portion in FIG. FIG. 13 is a schematic diagram for explaining the configuration of the protrusions arranged in the vicinity of the slide support part in FIG. 11.
As shown in FIGS. 11 to 13, the protruding portion 341 includes a support portion side flange 342 that is fixed to the electrode support portion 331 by a bolt, and an electrode side flange 343 that is attached to the discharge electrode 6 so as to be relatively movable. And are provided.
In the present embodiment, the support side flange 342 is a plate-like member extending downward (−Z axis direction) along the electrode support 331, and the electrode side flange 343 is connected to the discharge electrode 6. A description will be given by applying to an example of a plate-like member extending along the upward direction (+ Z-axis direction).

The electrode side flange 343 is provided with a long hole 345 extending along the Z axis and a bolt (fastening portion) 346 that is inserted into the long hole 345 and attached to the discharge electrode 6.
Here, the length of the elongated hole 345 in the Z-axis direction is changed based on the arrangement position of the protruding portion 341. That is, the long hole 345 related to the protruding portion 341 disposed in the vicinity of the slide support portion 133 as compared with the long hole 345 related to the protruding portion 341 disposed in the vicinity of the lower fixing portion 32 (see FIG. 12). (See FIG. 13) is longer in the Z-axis direction.

  Next, support of the discharge electrode 6 by the plurality of protrusions 341 in the film forming apparatus 301 having the above-described configuration will be described.

When discharge is started between the discharge electrode 6 and the counter electrode 3, the temperature of the discharge electrode 6 rises and the discharge electrode 6 expands thermally. On the other hand, the temperature also rises in the electrode support portion 331 and the deposition preventing plate 7, and thermal elongation occurs.
However, when the temperature change of the discharge electrode 6 is large, there may be a temperature difference between the discharge electrode 6 and the electrode support 331. At this time, the amount of thermal elongation in the discharge electrode 6 and the heat elongation in the electrode support 331 There is a difference between the amount and the amount of thermal elongation in the deposition preventing plate 7.

  As described above, when a difference in the amount of thermal elongation occurs between the deposition preventing plate 7 and the electrode support portion 331, the difference in the amount of thermal elongation is based on the lower fixing portion 32 in the + Z-axis direction. It appears as a difference in the amount of thermal expansion and is absorbed by the slide mechanism 136 in the slide support part 133.

At the same time, when a difference in thermal elongation occurs between the discharge electrode 6 and the electrode support portion 331, the bolt 346 attached to the discharge electrode 6 moves inside the elongated hole 345 formed in the protruding portion 341. It moves according to the difference in thermal elongation. One end portion of the electrode support portion 331 is fixed by the lower fixing portion 32 and the other upper end portion is supported by the slide mechanism 136 so as to be movable. Will increase as they are stacked. Thereby, the difference in the amount of thermal expansion described above in the protruding portion 341 on the slide mechanism 136 side becomes larger than the difference in the amount of thermal expansion described above in the protruding portion 341 on the lower fixing portion 32 side.
Therefore, the length of the long hole 345 in the Z-axis direction becomes longer as it approaches the slide mechanism 136 from the lower fixing portion 32, so that the bolt 346 does not interfere with the end portion of the long hole 345.

  By doing so, the weight of the discharge electrode 6 is supported by the protrusion 341 closest to the lower fixing portion 32. On the other hand, the protrusion 341 on the slide mechanism 136 side can manage the direction of thermal expansion in one direction in the Z-axis direction while absorbing the difference in the amount of thermal expansion described above by the long hole 345. For this reason, while preventing the electrode support part 331 from being restrained by the discharge electrode 6 and being deformed, the mutual positional relationship between the discharge electrode 6 and the electrode support part 331 is prevented from being inclined in the Y-axis direction compared to the initial adjustment state, The above difference in thermal elongation is absorbed. The relative positional relationship between the electrode support portion 331 and the discharge electrode 6 can be kept stable.

According to the above configuration, when there is a difference between the thermal elongation amount of the discharge electrode 6 and the thermal elongation amount of the electrode support portion 331, the gap between the protruding portion 341 extending from the electrode support portion 331 and the discharge electrode 6. Thus, the above-described difference in thermal elongation is absorbed.
Specifically, the bolt 346 attached to the discharge electrode 6 moves inside the elongated hole 345 formed in the protruding portion 341 according to the difference in thermal elongation, so that the above difference in thermal elongation is absorbed. The

Thereby, the deformation | transformation of the discharge electrode 6 which generate | occur | produces when the discharge electrode 6 and the electrode support part 331 interfere with thermal expansion can be prevented.
Moreover, since it is not necessary to provide an elongated hole that is longer than necessary with respect to the protruding portion 341, it is possible to suppress a decrease in strength due to the elongated hole processing of the protruding portion 341. In particular, since the protruding portion 341 close to the lower fixing portion 32 can be close to a round hole, it is possible to largely prevent a decrease in strength and is suitable for the need to most support the weight of the discharge electrode 6.

[ Fourth Embodiment]
Next, a fourth embodiment of the present invention will be described with reference to FIGS.
The basic configuration of the film forming apparatus of the present embodiment is similar to the reference embodiment, the reference embodiment, the configuration of the periphery of the electrode supporting portion is different. Therefore, in the present embodiment, only the configuration around the electrode support portion will be described with reference to FIGS. 14 to 16, only the configuration around the electrode support portion will be described, and description of other configurations and the like will be omitted.
FIG. 14 is a schematic diagram illustrating a configuration around the electrode support portion according to the present embodiment.
In addition, the same code | symbol is attached | subjected to the component same as reference embodiment, and the description is abbreviate | omitted.

  As shown in FIG. 14, the electrode support portion 431 in the film forming apparatus (vacuum processing apparatus) 401 is provided with a lower fixing portion 32 and a slide support portion 133 that support the electrode support portion 431, and a plurality of projecting portions 441. It has been.

FIG. 15 is a partially enlarged view illustrating the configuration of the protruding portion of FIG. FIG. 16 is a schematic diagram for explaining the fitting of the support portion side protruding portion and the electrode side protruding portion of FIG. 15.
As shown in FIG. 15, the protrusion 441 is provided with a support-side protrusion 442 </ b> S fixed to the electrode support 431 and an electrode-side protrusion 442 </ b> E fixed to the discharge electrode 6. It is made of a strong metal material.

The support portion side protruding portion 442S supports the discharge electrode 6 together with the electrode side protruding portion 442E.
The support portion side protrusion 442S includes a support portion side flange 443S extending in the −Z axis direction along the electrode support portion 431, an electrode side flange 444S extending in the + Z axis direction along the discharge electrode 6, and the electrode side A support pin 445S attached to the flange portion 444S and an electrical connection portion 446S disposed on a side surface of the electrode-side flange portion 444S and facing the inner side surface of the groove portion 443E are provided.

  The support part side flange part 443S is a part formed in a bent plate shape on the electrode support part 431 side in the support part side protruding part 442S, and is a part fixed to the electrode support part 431 with a bolt or the like.

  The electrode side flange portion 444S is a portion formed in a bent plate shape on the discharge electrode 6 side in the support portion side protruding portion 442S, and is a portion fitted with the groove portion 443E of the electrode side protruding portion 442E.

  The support pin 445S is a columnar member that extends in the X-axis direction and is attached to the electrode side flange portion 444S, and is fitted to the slit portion 444E of the electrode side protruding portion 442E.

  The electrical connection portion 446S is a conductive material that comes into contact with the inner surface of the groove portion 443E when the electrode side flange portion 444S is fitted into the groove portion 443E. Furthermore, it is desirable that the electrical connection portion 446S is composed of an elastic metal felt, a leaf spring, or the like so as to always come into contact with the inner surface of the groove portion 443E.

The electrode side protruding portion 442E supports the discharge electrode 6 together with the supporting portion side protruding portion 442S.
The electrode-side protruding portion 442E includes a groove portion 443E that extends along the discharge electrode 6 and opens toward the −Z-axis direction, and a slit portion 444E that extends toward the −Z-axis direction on the wall surface constituting the groove portion 443E. Is provided.

The groove portion 443E is a groove having an opening extending in the Y-axis direction, and is a portion into which the electrode side flange portion 444S of the support portion side protruding portion 442S is fitted.
The slit portion 444E is a slit that penetrates through the wall surface forming the groove portion 443E and opens in the −Z-axis direction, and is a portion into which the support pin 445S of the support portion side protrusion 442S is slidably inserted. .

  Next, support of the discharge electrode 6 by the plurality of protrusions 441 in the film forming apparatus 401 having the above-described configuration will be described.

  First, the support part side protrusion part 442S of the protrusion part 441 is fixed to the electrode support part 431. On the other hand, the electrode-side protruding portion 442E is fixed to the discharge electrode 6. At this time, the discharge electrode 6 is removed from the film forming apparatus 401 for maintenance and the like.

  When the support-side protruding portion 442S and the electrode-side protruding portion 442E are fixed to the electrode support portion 431 and the discharge electrode 6, respectively, the discharge electrode 6 is moved manually or lifted by a hoist crane or the like to move to the support portion side. The discharge electrode 6 can be easily attached to the film forming apparatus 401 by combining the electrode-side protruding portion 442E with the protruding portion 442S.

  Specifically, the electrode side flange portion 444S of the support portion side protruding portion 442S and the groove portion 443E of the electrode side protruding portion 442E are fitted together. At the same time, the support pin 445S of the support portion side protrusion 442S and the slit portion 444E of the electrode side protrusion 442E are fitted together.

  In other words, since the electrode-side protruding portion 442E is combined with the support portion-side protruding portion 442S from the upper side (+ Z axis side), the discharge electrode 6 can be easily attached to the film forming apparatus 401. Further, since the discharge electrode 6 can be supported on the electrode support portion 431 fixed to the film forming apparatus 401 without being fixed by the protruding portion 441, the discharge electrode 6 is removed from the film forming apparatus 401 for maintenance or the like. If necessary, the discharge electrode 6 can be easily removed.

On the other hand, when a difference in the amount of thermal elongation occurs between the discharge electrode 6 and the electrode support portion 331, the difference in the amount of thermal elongation is a combination portion of the support portion side protruding portion 442S and the electrode side protruding portion 442E. Absorbed in.
Specifically, the electrode side flange portion 444S of the support portion side protruding portion 442S relatively moves in the Z-axis direction inside the groove portion 443E of the electrode side protruding portion 442E, so that the above difference in the amount of thermal elongation is absorbed. Is done. At the same time, the support pin 445S of the support side protrusion 442S relatively moves in the Z-axis direction within the slit portion 444E of the electrode side protrusion 442E.

Note that the situation of relative movement in the Z-axis direction in the slit portion 444E and the cut length of the slit portion 444E are the same as those of the elongated hole 345 of the third embodiment, and the required length is changed. You may make it become long as it approaches the slide mechanism 136 from the side fixing | fixed part 32. FIG.

According to the above configuration, the discharge electrode 6 is configured such that the end of the support portion side protrusion 442S fixed to the electrode support portion 431 is inserted into the groove portion 443E of the electrode side protrusion 442E fixed to the discharge electrode 6. Is supported by Further, by inserting the support pin 445S into the slit portion 444E, the relative position in the direction orthogonal to the Z-axis direction is determined between the discharge electrode 6 and the electrode support portion 431.
When there is a difference between the thermal elongation amount of the discharge electrode 6 and the thermal elongation amount of the electrode support portion 431, the electrode side protruding portion 442E and the support portion side protruding portion 442S move relative to each other, The above difference in thermal elongation is absorbed.

1, 101, 201, 301, 401 Film forming apparatus (vacuum processing apparatus)
6 Discharge electrode 7 Protection plate (electrode support plate)
S substrate 31, 131, 231, 331, 431 Electrode support part 41, 341, 441 Projection part 32 Lower side fixing part 33 Upper side fixing part 34 X First adjustment part 35 Y Second adjustment part 133 Slide support part 231 P Flat plate part (plate body) )
236Z 3rd adjustment part 345 long hole 346 bolt (fastening part)

Claims (7)

A discharge electrode that extends along the substrate on which the film-forming process is performed and is opposed to the substrate, and that is supplied with a high-frequency current;
An electrode support that is disposed at a position sandwiching the discharge electrode together with the substrate, extends along the discharge electrode, and is grounded to a common potential;
Extends toward the discharge electrode from the electrode supporting portion, the discharge electrode asked to support connected to the electrode support portion, and the discharge electrode and the electrode supporting portion and electrically connected to the conductive A protrusion having,
An electrode support plate grounded to the common potential;
A fixing portion for fixing one end of the electrode support portion to the electrode support plate;
A slide support portion that supports the other end portion of the electrode support portion so as to be slidable in a direction approaching and separating from the fixed portion with respect to the electrode support plate ; and
The vacuum processing apparatus, wherein the protruding portion constitutes a circuit having a predetermined inductance between the discharge electrode and the electrode support portion. The electrode support portion is a member formed in a plate shape,
In each of the fixed portion and the slide support portion,
A pair of first adjustment parts for moving the electrode support part in a direction approaching and separating from the discharge electrode;
A second adjuster for moving the electrode support in a direction along the surface of the discharge electrode;
The vacuum processing apparatus according to claim 1, wherein: The electrode support portion is provided with a columnar shaft extending along the discharge electrode, and a plate attached to the shaft,
In each of the fixed portion and the slide support portion,
A first adjuster for moving the electrode support in a direction toward and away from the discharge electrode;
A second adjuster for moving the electrode support in a direction along the surface of the discharge electrode;
A third adjustment unit for rotating the shaft body around a central axis;
The vacuum processing apparatus according to claim 1, wherein: In the protrusion,
An elongated hole extending from the fixed portion toward the slide support portion;
A fastening portion that is inserted through the elongated hole and attached to the discharge electrode;
The vacuum processing apparatus according to any one of claims 1 to 3, characterized in that is provided. The plurality of protrusions are provided side by side from the fixed part toward the slide support part,
The vacuum processing apparatus according to claim 4 , wherein a length in a longitudinal direction of the long hole is increased in order from the protruding portion on the fixed portion side toward the protruding portion on the slide support portion side. . In the protrusion,
A support-side protruding portion fixed to the electrode support portion, and having an end portion extending from the fixed portion toward the slide support portion, and a support pin extending from the electrode support portion toward the discharge electrode;
A groove portion fixed to the discharge electrode, extending along the surface of the discharge electrode and extending from the slide support portion toward the fixed portion, and an end portion of the support portion side protruding portion is inserted, and the groove portion is configured An electrode-side protruding portion formed on the wall surface, the slit portion extending from the slide support portion toward the fixed portion and into which the support pin is inserted,
The vacuum processing apparatus according to any one of claims 1 to 3, characterized in that is provided.   A discharge electrode that extends along the substrate on which the film-forming process is performed and is opposed to the substrate, and that is supplied with a high-frequency current;
  An electrode support that is disposed at a position sandwiching the discharge electrode together with the substrate, extends along the discharge electrode, and is grounded to a common potential;
  Extending from the electrode support portion toward the discharge electrode, connected to the electrode support portion to support the discharge electrode, and electrically connected to the discharge electrode and the electrode support portion A protrusion,
  An electrode support plate grounded to the common potential;
  A fixing portion for fixing one end of the electrode support portion to the electrode support plate;
  A slide support portion that supports the other end portion of the electrode support portion so as to be slidable in a direction approaching and separating from the fixed portion with respect to the electrode support plate;
  A method for supporting a discharge electrode of a vacuum processing apparatus, wherein the projecting portion constitutes a circuit having a predetermined inductance between the discharge electrode and the electrode support portion.

Images