JP5061069B2 - Semiconductor exposure equipment using extreme ultraviolet light - Google Patents

Description

  The present invention relates to a semiconductor exposure apparatus using extreme ultraviolet light.

  For example, a semiconductor chip is generated by reducing and projecting a mask on which a circuit pattern is drawn on a resist-coated wafer and repeating processes such as etching and thin film formation. With the miniaturization of semiconductor processes, light having a shorter wavelength is required.

  Therefore, a semiconductor exposure technique using light with an extremely short wavelength of 13.5 nm and a reduction optical system has been studied. This technique is called EUVL (Extreme Ultra Violet Lithography). Hereinafter, extreme ultraviolet light is referred to as EUV light. An EUV exposure system that uses EUV light includes a light source device that outputs EUV light, and an exposure device that irradiates a mask with EUV light to form a circuit pattern on a semiconductor wafer (Patent Document 1).

  Three types of EUV light sources are known: LPP (Laser Produced Plasma) type light sources, DPP (Discharge Produced Plasma) type light sources, and SR (Synchrotron Radiation) type light sources. The LPP-type light source is a light source that generates plasma by irradiating a target material with laser light and uses EUV light emitted from the plasma. The DPP type light source is a light source that uses plasma generated by discharge. The SR type light source is a light source that uses orbital radiation. Among the above three types of light sources, the LPP type light source can increase the plasma density and can increase the collection solid angle as compared with other methods, so that there is a possibility that high output EUV light can be obtained. high.

  Here, since EUV light has a short wavelength and is easily absorbed by substances, EUVL employs a reflective optical system. The reflective optical system is constructed using, for example, a multilayer film using molybdenum (Mo) and silicon (Si). Since the multilayer film of Mo / Si has a high reflectance near 13.5 nm, EUVL uses 13.5 nm EUV light.

  However, since the reflectance of the multilayer film is about 70%, the output gradually decreases as reflection is repeated. Since EUV light is reflected ten times in the exposure apparatus, the EUV light source apparatus needs to supply high-power EUV light to the exposure apparatus. Thus, as an EUV light source device, an LPP type light source is expected (Patent Document 2). In an LPP-type light source device, for example, a tin (Sn) droplet is supplied as a target from a target supply device into a vacuum chamber, and the carbon droplet is irradiated with carbon dioxide laser light to form a plasma, which is emitted from the plasma. The collected EUV light is collected by a condenser mirror and guided to an exposure machine.

By the way, the EUV exposure system must supply EUV light with higher purity to the exposure apparatus. If light other than EUV light is mixed in the light irradiated to the mask, the exposure contrast is lowered and the patterning accuracy is lowered. For example, in the spectrum of light emitted from plasma, light having a wavelength of 130 nm (DUV: Deep Ultraviolet) to 400 nm (UV: Ultraviolet) sensitizes an exposure resist used in an exposure apparatus, and the exposure contrast is increased. It causes lowering. Infrared light (IR) may be absorbed by a mask, a wafer, or the like, causing thermal expansion, and reducing patterning accuracy.
In particular, in the case of an EUV light source device using a carbon dioxide pulse laser (infrared light with a wavelength of 10.6 μm; hereinafter referred to as CO2 laser) as an excitation source of a tin target, high-power CO2 laser light is scattered and reflected at the target. Therefore, it is necessary to remove the scattered CO2 laser light. For example, when the intensity of EUV light having a center wavelength of 13.5 nm is 1, it is necessary to suppress the intensity of CO2 laser light to 0.01 or less.

  Therefore, in the second prior art (Patent Document 3), a reflective planar diffraction grating is provided to separate EUV light and other light and supply only EUV light. Light other than EUV light is absorbed by the damper and converted into thermal energy.

  In the case of an SPF (Spectrum Purity Filter) using a reflective diffraction grating, it is necessary to provide a blazed groove in order to increase the efficiency of EUV diffracted light. However, it is necessary to form a very fine groove having a pitch of several μm and a groove height of several tens of nm, and in order to eliminate the aberration of diffracted EUV light, a curved groove having a variable pitch is required. Necessary (Non-Patent Document 1).

Therefore, as described in the fourth prior art (Patent Document 4), it is proposed to generate a reflective SPF by processing the Mo / Si multilayer film coated on the mirror surface into a blazed groove shape. Has been.
JP 2005-64135 A JP 2006-80255 A US Pat. No. 6,469,827 US Pat. No. 7,050,237 “EUV spectral purity filter: optical and mechanical design, gratingfabrication, and testing” H. Kirey, et al., Advances in Mirror Technology for X-Ray, EUV Lithography, Laser and Other Applications, edited by Ali M. Khounsary, Udo Dinnger, Kazuya Ohta, Proceeding of SPIE Vol.5193

  In the conventional technique in which the multilayer film is blazed, it is necessary to stack a total of 2000 or more Mo / Si multilayer films. In order to reliably separate the EUV diffracted light from the specularly reflected light of other light, it is necessary to set a large blazed angle. In order to increase the blazed angle, a multilayer film of 2000 layers or more is required.

  When a thin film SPF is used, since the EUV light transmittance is low, the EUV light transmission efficiency decreases. Furthermore, in the case of a thin film SPF, it may be deformed by absorbing infrared light or the like, or may be torn, and reliability and usability are low.

  The present invention has been made paying attention to the above problems, and an object thereof is to provide a semiconductor exposure apparatus capable of irradiating a mask with high-purity extreme ultraviolet light. Another object of the present invention is to improve the purity of extreme ultraviolet light by using a plurality of types of diffraction effects by using a mirror formed by laminating a plurality of regions having different numbers and shapes of multilayer films. An object of the present invention is to provide a semiconductor exposure apparatus which can be used. Further objects of the present invention will become clear from the description of the embodiments described later.

In order to solve the above problems, a semiconductor exposure apparatus according to the first aspect of the present invention is a semiconductor exposure apparatus including an illumination optical system using extreme ultraviolet light, and the illumination optical system reflects extreme ultraviolet light. A plurality of extreme ultraviolet light mirrors, and at least one predetermined extreme ultraviolet light mirror of each of the extreme ultraviolet light mirrors separates extreme ultraviolet light and light of other wavelengths, A base part, a base part provided on one side of the board part, a base part formed from a first multilayer film provided on one side of the board part, and a reflection provided integrally on the one side of the base part And a reflecting portion generated by forming a groove having a predetermined shape in a second multilayer film provided on one surface side of the base portion, and the groove having the predetermined shape is formed as a triangular wave groove Is done .
The semiconductor exposure apparatus according to the second aspect of the present invention is a semiconductor exposure apparatus including an illumination optical system using extreme ultraviolet light, and the illumination optical system is a mirror for extreme ultraviolet light for reflecting extreme ultraviolet light. A plurality of mirrors for extreme ultraviolet light, and at least one predetermined extreme ultraviolet light mirror separates extreme ultraviolet light and light of other wavelengths, and includes a substrate portion and a substrate portion. A base portion provided on one surface side of the substrate portion, a base portion formed from a first multilayer film provided on the one surface side of the substrate portion, and a reflecting portion integrally provided on the one surface side of the base portion, And a reflection part generated by forming a groove having a predetermined shape in a second multilayer film provided on one surface side of the part, and the groove having the predetermined shape is formed as a wavy groove.

  The predetermined extreme ultraviolet light mirror may be configured as a mirror having a concave surface for reflecting incident extreme ultraviolet light as substantially parallel light.

  The predetermined extreme ultraviolet light mirror may be configured as a mirror having a plane for reflecting incident extreme ultraviolet light.

  The illumination optical system includes an intermediate condensing point on which extreme ultraviolet light is collected, and a light shielding member having an opening for passing the extreme ultraviolet light is provided in the vicinity of the intermediate condensing point. Also good.

  The first multilayer film and the second multilayer film are integrally formed, and the thickness dimension of the plurality of pair layers constituting each of the first multilayer film and the second multilayer film depends on the angle of the incident extreme ultraviolet light. Can be set.

  The total number of pair layers constituting the first multilayer film and the second multilayer film can be in the range of 100 or more and 1000 or less.

  According to the present invention, a mirror that reflects extreme ultraviolet light can include a base portion formed of a first multilayer film and a reflection portion formed by forming a groove having a predetermined shape in the second multilayer film. Therefore, it is possible to separate extreme ultraviolet light from other light using a plurality of types of reflection actions. Then, the extreme ultraviolet light having high purity can be obtained by allowing only the extreme ultraviolet light to pass through and blocking the passage of other light by the light shielding member located in the vicinity of the focal point.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the present embodiment, an exposure system 1 using EUV light will be described as an example. In the present embodiment, as described below, a mirror 510 included in the illumination optical system 500 of the exposure apparatus 3 is exemplified as a mirror that reflects EUV light. In the present embodiment, a reflective diffraction grating is integrally provided on the mirror 510 in the illumination optical system 500. As a result, the original function and the SPF function are simultaneously realized in the mirror 510. The original function of the mirror 510 is a function of reflecting incident EUV light as parallel light. In this embodiment, by providing a groove with a predetermined shape in the multilayer film on the mirror 510, Bragg reflection by the multilayer film of the base portion and the multilayer film of the portion provided with the groove of the predetermined shape, and the surface of the groove of the predetermined shape Three types of diffraction effects can be used: diffraction due to the repeated pattern of the multilayer film appearing in FIG. In the present embodiment, a blazed groove, a triangular wave groove, and a wavy groove will be described as examples of the predetermined groove.

  A first embodiment will be described with reference to FIGS. FIG. 1 is an explanatory diagram schematically showing the overall configuration of the EUV exposure system 1. The exposure system 1 includes, for example, an EUV light source device 2 and an exposure device 3.

  Details of the EUV light source device 2 will be described later with reference to the drawings, but the outline will be described first. The EUV light source device 2 is a device that generates EUV light and supplies it to the exposure device 3. The target supplier 120 supplies a target 200 such as tin into the vacuum chamber 100. The drive laser light source 110 irradiates the target 200 with a drive laser to generate plasma. EUV light generated from the plasma 201 is collected by the EUV collector mirror 130 and sent out toward the exposure apparatus 3.

  The exposure apparatus 3 includes, for example, an illumination optical system 500, a mask 600, and a projection optical system 700. The illumination optical system 500 is an optical system for causing the EUV light supplied from the EUV light source device 2 to enter the mask 500, and includes a plurality of mirrors. A circuit pattern is formed on the mask 600. The projection optical system 700 is an optical system that forms a circuit pattern by causing EUV light reflected by the mask 600 to enter a semiconductor wafer.

  As shown in an enlarged view on the lower side of FIG. 1, in this embodiment, at least one of the plurality of mirrors included in the illumination optical system 500 has a flat base portion 512 and a reflection having a predetermined shape groove. The part 513 is integrally formed. The mirror 510 makes the direction of the reflected light 204 of the EUV light different from the direction of the reflected light 301A, 301B other than the EUV light (sometimes referred to as other light 301 as a whole). Thereby, the reflected light 204 of the EUV light and the reflected lights 301A and 301B other than the EUV light are separated, and only the EUV light is sent out toward the mask 600.

  The configuration of the EUV light source device 2 will be described with reference to FIG. As will be described later, the EUV light source device 2 includes, for example, a vacuum chamber 100, a driving laser light source 110, a target supplier 120, an EUV collector mirror 130, magnetic field generating coils 140 and 141, and an aperture 160. The vacuum pumps 170 and 171 and the gate valve 180 are provided.

  The vacuum chamber 100 is configured by connecting a first chamber 101 having a large volume and a second chamber 102 having a small volume. The first chamber 101 is a main chamber for generating plasma and the like. The second chamber 102 is a connection chamber for supplying EUV light emitted from the plasma to the exposure apparatus.

  A first vacuum exhaust pump 170 is connected to the first chamber 101, and a second vacuum exhaust pump 171 is connected to the second chamber 102. Thus, the chambers 101 and 102 are kept in a vacuum state. Each evacuation pump 170,171 may be comprised as a separate pump, respectively, and the structure using the same pump may be sufficient.

  The target supply unit 120 supplies the target 200 as a solid or liquid droplet by, for example, heating and dissolving a material such as tin (Sn). In this embodiment, tin is used as an example of the target material. However, the present invention is not limited to this, and other materials such as lithium (Li) may be used. Alternatively, the target may be supplied in a gas, liquid, or solid state using materials such as argon (Ar), xenon (Xe), krypton (Kr), water, and alcohol. Furthermore, stannane (SnH4), tin tetrachloride (SnCl4), or the like may be supplied as liquid or ice droplets.

  The driving laser light source 110 outputs a pulse laser for exciting the target 200 supplied from the target supplier 120. The driving laser light source 110 is configured as, for example, a CO2 (carbon dioxide gas) pulse laser light source. For example, the driving laser light source 110 emits laser light having specifications of a wavelength of 10.6 μm, an output of 20 kW, a pulse repetition frequency of 100 kHz, and a pulse width of 20 nsec. In addition, although a CO2 pulse laser is mentioned as an example as a laser light source, this invention is not limited to this.

  The excitation laser light 300 output from the driving laser light source 110 enters the first chamber 101 via the condenser lens 111 and the incident window 112. The laser beam 300 incident on the first chamber 101 irradiates the target 200 supplied from the target supplier 120 through the incident hole 132 provided in the EUV collector mirror 130.

  When the target is irradiated with laser light, target plasma 201 is generated. Hereinafter, for convenience, it is simply referred to as plasma 201. The plasma 201 emits EUV light 202 having a center wavelength of 13.5 nm. The EUV light 202 emitted from the plasma 201 is incident on the EUV collector mirror 130 and reflected. The reflected light 203 is collected at an intermediate focus (IF) as a “focus”. The EUV light condensed on the IF is guided to the exposure apparatus through the gate valve 180 in the open state.

  An aperture 160 is provided in the vicinity of the IF so as to separate the first chamber 101 and the second chamber 102. The aperture 160 is configured as a plate-like member having a small hole, for example. The aperture 160 absorbs light other than EUV light (DUV, UV, VIS (Visible: visible light), IR) and converts it into heat. This prevents light and debris other than EUV light from being sent to the exposure apparatus 3 side as much as possible.

  A pair of magnetic field generating coils 140 and 141 are provided so as to sandwich the optical path of EUV light 202 and 203 from the plasma 201 through the EUV collector mirror 130 toward the IF from above and below. The axes of the coils 140 and 141 coincide. Each of the coils 140 and 141 is configured as an electromagnet having a superconducting coil, for example. When currents in the same direction are passed through the coils 140 and 141, a magnetic field is generated. This magnetic field has a high magnetic flux density in the vicinity of the coils 140 and 141 and a low magnetic flux density at an intermediate point between the coils 140 and 141.

When the target is irradiated with laser light, debris is generated. Charged debris (ion such as plasma) is captured by the magnetic field generated by each of the coils 140 and 141 and moves downward in FIG. 1 while spirally moving by Lorentz force. The debris that has moved downward is sucked by the first vacuum pump 170 and collected outside the first chamber 101. The installation location of the magnetic field generator (in this example, the coils 140 and 141) may be a position where ionic debris is discharged while avoiding the optical components by the magnetic lines generated by them. Therefore, the arrangement is not limited to the illustrated one.
Alternatively, the magnetic flux density of either the coil 140 or 141 may be made relatively weak so that debris having a charge flows on the low magnetic flux density side.

  The power supply device that supplies current to each of the coils 140 and 141, the wiring, the aperture 160, the mechanism for cooling the EUV collector mirror 130, and the like are not shown for convenience of explanation. However, a so-called person skilled in the art can easily understand an energization structure, a cooling structure, and the like, and can actually manufacture the structure.

  The inside of the first chamber 101 is kept in a high vacuum state by the first vacuum exhaust pump 170, and the inside of the second chamber 102 is kept in a vacuum state by the second vacuum exhaust pump 171. The pressure in the first chamber 101 is set lower than the pressure in the second chamber 102. Furthermore, ions (charged debris) in the first chamber 101 are trapped by the magnetic field generated by the coils 140 and 141.

  Accordingly, it is possible to suppress the debris generated in the first chamber 101 from flowing into the second chamber 102. Furthermore, even when debris or the like flows into the second chamber 102, the debris or the like can be collected outside the second chamber 102 by the second vacuum exhaust pump 171. Thereby, it is possible to prevent debris and the like from flowing into the exposure apparatus.

  In the present embodiment, a magnetic field generated by the coils 140 and 141 is used as a protection means for protecting various optical elements from debris. The various optical elements are the EUV collector mirror 130, the incident window 112, the incident window of various optical sensors provided for observing the phenomenon in the vacuum chamber 100, and the like.

  Among the debris emitted from the plasma 201, since ions have electric charges, they are captured by a magnetic field and discharged by the first vacuum exhaust pump 170. However, neutral debris having no charge cannot be restrained by a magnetic field.

  Therefore, if no countermeasure is taken, the neutral debris gradually contaminates and damages various optical elements in the vacuum chamber 100. Further, when neutral debris in the first chamber 101 flows into the exposure apparatus through the second chamber 102, the various optical elements in the exposure apparatus are contaminated.

  In contrast, in this embodiment, the vacuum chamber 100 is divided into a large-volume first chamber 101 and a small-volume second chamber 102, and the pressure in the first chamber 101 is set in the second chamber 102. It is set lower than the pressure. Further, the first chamber 101 and the second chamber 102 are separated by an aperture 160 to limit the spatial movement from the first chamber 101 to the second chamber 102, and neutral debris is contained in the second chamber 102. The probability of inflow is reduced. Even when neutral debris enters the second chamber 102, the debris is discharged to the outside by the second vacuum pump 171. Therefore, in this embodiment, it is possible to prevent debris in the EUV light source device 2 from entering the exposure apparatus.

  Although the exposure apparatus can be prevented from being contaminated by debris, neutral debris gradually diffuses and accumulates in the vacuum chamber 100. Therefore, the surface 131 of the EUV collector mirror 130 may be gradually contaminated with debris as time passes. In that case, maintenance work may be performed.

  In the maintenance work, for example, the operation of the EUV light source device 2 is stopped, the gate valve 180 is closed to completely shut off the exposure device 3 and the vacuum chamber 100, and the EUV collector mirror 130 is cleaned with the etchant gas.

  As the etchant gas, for example, hydrogen gas, halogen gas, hydrogen halide gas, argon gas, or a mixed gas thereof can be used. The EUV collector mirror 130 may be heated by a heating device (not shown) to promote cleaning. Furthermore, the configuration may be such that the etchant gas is excited by RF (Radio Frequency) or microwaves to facilitate cleaning.

  When the cleaning is completed, the supply of the etchant gas to the vacuum chamber 100 is stopped, and after obtaining a sufficient degree of vacuum by the vacuum exhaust pumps 170 and 171, the gate valve 180 is opened and the EUV light source device 2 is operated. Resume.

  FIG. 3 is an explanatory view showing the configuration of the exposure apparatus 3. Hereinafter, the illumination optical system 500 will be mainly described. In the chamber 400 of the exposure apparatus 3, an illumination optical system 500, a mask 600, and a projection optical system 700 are provided. As described with reference to FIG. 2, the chamber 100 of the EUV light source device 2 is connected to the chamber 400 via the gate valve 180.

  The illumination optical system 500 includes, for example, a collimator mirror 510, a fly-eye mirror array 520, a pinhole array 530, and a condenser mirror 540. The collimating mirror 510 is a mirror for reflecting the EUV light 203 incident from the EUV light source device 2 as parallel light. The condensing mirror 130 in the EUV light source device 2 may be referred to as a C1 mirror, and the collimating mirror 510 in the illumination optical system 500 may be referred to as a C2 mirror.

  In addition to the EUV light 203, the light incident from the EUV light source device 2 includes light 301 having other wavelengths. The light of other wavelengths is DUV, UV, VIS, and IR as described above. Further, since the CO 2 laser light for exciting the target is scattered and reflected by the target, the CO 2 laser light also enters from the EUV light source device 2. Since the collimator mirror 510 has a configuration unique to the present invention as described later, the reflection direction of the EUV light 204 is different from the reflection direction of the light 301 other than the EUV light.

  The fly-eye mirror array 520 is a mirror array in which a plurality of concave mirrors 521 (see FIG. 9) are arranged on a plane. The fly-eye mirror array 520 functions as a beam homogenizer. That is, the fly-eye mirror array 520 makes the intensity of EUV light uniform and enters the mask 600.

  The EUV light 205 reflected by each concave mirror once gathers at the focal point of each concave mirror 521 and then diffuses. Therefore, in this embodiment, the pinhole array 530 is provided in the vicinity of the focus group of the fly-eye mirror array 520. The focus group of the fly-eye mirror array 520 is an aggregate of the focus of each concave mirror 521. The pinhole array 530 has a small hole corresponding to the focal point of each concave mirror 521.

  The condenser mirror 540 is a mirror for reflecting (206) the EUV light 205 incident from the fly-eye mirror array 520 toward the mask 600. The EUV light 207 reflected by the mask 600 is sent to the projection optical system 700.

  Next, the collimating mirror 510 will be described with reference to FIGS. Reference is first made to FIG. FIG. 6 is an explanatory view schematically showing a cross section of the collimating mirror 510. A multilayer film that selectively reflects a predetermined wavelength is formed on the surface of the collimating mirror 510. In this embodiment, the predetermined wavelength is 13.5 nm. The multilayer film is configured by laminating a large number of pair layers (Mo / Si) composed of molybdenum and silicon. A large number of blazed grooves 513 are formed in the multilayer film covering the surface of the mirror 510.

  As shown in enlarged views in FIGS. 5 and 6, the blazed groove 513 of the present embodiment is formed in parallel lines. The shape of the blazed groove 513 is not limited to that shown in FIG. As shown in the examples described later, the blazed groove 513 can be formed in various shapes.

  FIG. 4 is an enlarged cross-sectional view showing a part of the collimating mirror 510. In FIG. 4, the axis AX <b> 1 indicates an axis perpendicular to the substrate portion 511 of the collimator mirror 510, and the other axis AX <b> 2 indicates an axis perpendicular to the slope of the blazed groove 513.

  The substrate portion 511 of the collimator mirror 510 is formed of a material having good thermal conductivity such as silicon, SiC, or nickel alloy. A predetermined number of multilayer films (Mo / Si pair layers) are coated on the surface of the substrate portion 511 (the upper surface in FIG. 4 and corresponding to “one surface”).

  In this embodiment, the Mo / Si pair layer is coated in the range of 100 to 1000 layers. Preferably, in this embodiment, about 300 Mo / Si pair layers are stacked on the surface of the substrate portion 511. The Mo / Si pair layer is a layer composed of one molybdenum film and one silicon film, and a multilayer film is formed by stacking a large number of Mo / Si pair layers.

  Of the 300 layers (thickness H0) of the multilayer film, the blazed groove 513 is processed into a multilayer film of 250 layers (thickness H) from the surface, and the bottom layer of the 50 layers is left as it is. The multilayer film of 50 layers on the bottom side (multilayer film having a thickness ΔH) corresponds to the “first multilayer film”. In order to make the base part 512 Bragg-reflect EUV light, the base part 512 is composed of about 40-60 Mo / Si pair layers. A 250-layer multilayer film (a multilayer film having a thickness H) positioned above the base portion 512 corresponds to a “second multilayer film”, and the blazed groove 513 corresponds to a “reflecting portion”.

  Note that the above numerical values of 300 layers, 250 layers, and 50 layers are merely preferred examples for explanation, and the present invention is not limited to the above numerical values. In short, the base part 512 and the reflection part can exhibit the function of Bragg reflection of EUV light, the reflection part regularly reflects light other than EUV light in a direction different from EUV light, and the pattern of the multilayer film on the surface of the blazed groove of the reflection part As long as the diffraction function by and the diffraction function by the blazed groove itself can be exhibited, it can be set in the range of 100 to 1000 layers.

  In the case of less than 100 layers, the required blazed angle θB cannot be obtained, and EUV light may not be sufficiently separated from other light. When it exceeds 1000 layers, it takes time to manufacture, and further, the internal stress increases and the multilayer film may be peeled off.

  Therefore, in this embodiment, a value of 300 layers is selected as an example from the range of 100 layers to 1000 layers, and the reflective diffraction grating is integrally provided on the collimator mirror 510. As more multilayer films are stacked, the blazed angle θB can be increased, and the EUV reflected light 204 and the other lights 301A and 301B can be easily separated.

  In this embodiment, the number of Mo / Si layers stacked can be set within a range of 100 to 1000, and the stress generated in the multilayer film can be reduced to prevent peeling of the multilayer film. Furthermore, as the EUV light reflection efficiency, the performance of 60% to 70% equivalent to that of the conventional mirror can be maintained.

  That is, the collimating mirror 510 of the present embodiment has the SPF function in addition to the function of reflecting the original EUV light into parallel light and reflecting it at a reflectance of about 60% to 70%. Can be kept at about 30% of the conventional loss, and the purity of the EUV light can be increased.

  In addition, the outermost surface of the mirror after processing the blazed groove 513 is coated with ruthenium (Ru) or the like so that the exposed portion of the processed Mo / Si layer is not oxidized to prevent a decrease in diffraction efficiency of EUV light. It is good also as a structure. The thickness of the Mo / Si pair layer is preferably set according to the incident angle of EUV light, as will be described later with reference to FIG.

  Assuming that the incident angle of the EUV light 203 incident on the collimating mirror 510 shown in FIG. 4 is α, the reflected light 204 is reflected at an angle α and incident on the fly-eye mirror array 520 (FIG. 3). On the other hand, each light (301) of DUV, UV, VIS, and IR including CO2 laser light is regularly reflected (302A) at an angle of α + 2θB. Therefore, at the position of the pinhole array 530 (FIG. 3), the EUV reflected light 204 and the specularly reflected light 302A such as CO2 laser light are separated.

  That is, by the blazed groove 513 (blazed angle θB), DUV, UV, VIS, and IR, excluding the EUV light 203, are regularly reflected (302A) at an angle of α + 2θB by the surface of the angle θB. Therefore, the EUV light 204 reflected or diffracted at an angle α can be separated from other light (DUV, UV, VIS, IR). As a result, the collimating mirror 510 performs the function of SPF. As will be described later, the other light 302A traveling in a different direction from the EUV light 204 is absorbed by the wall of the pinhole array 530 (FIG. 3).

Further, IR light such as CO2 laser light in FIG. 4 is diffracted (302B) by the blazed groove 513 at an angle of α + θd (or α-θd (not shown)). In this embodiment, since laser light having a wavelength of 10.6 μm is used, the angle θd in FIG. 4 is 27.6 mrad.
It becomes. That is, it diffracts (302B) from the EUV light 204 at an angle different by 27.6 mrad. Diffracted light (302B) is also absorbed by the wall of the pinhole array 530 (FIG. 3).

  Although not shown for convenience, DUV, UV, and VIS (301) incident on the mirror 510 have a periodic stripe pattern of molybdenum and silicon appearing on the slope of the blazed groove 513 (in this embodiment, at a pitch of 1.54 μm). It is diffracted by the grating formed by a stripe pattern and travels at a different angle from the EUV light 204. This diffracted light is also absorbed by the wall of the pinhole array 530 (FIG. 3). As described above, the light (301A, 302B, diffracted light due to the periodic stripe pattern of molybdenum and silicon appearing on the inclined surface of the blazed groove 513) separated at different angles other than the EUV light by the mirror 510 is collectively called EUV light Light 302.

  FIG. 7 is a characteristic diagram for setting the thickness of the Mo / Si pair layer according to the angle (α) of the EUV light incident on the collimating mirror 510. As shown in FIG. 7, as the incident angle increases from 0 degree to 50 degrees, the thickness of the pair layer increases from about 6 nm to about 10 nm. When the incident angle α is 12 degrees, the thickness of the pair layer is 6.9 nm. The increase rate of the thickness of the pair layer increases from the vicinity where the incident angle exceeds 50 degrees. When the incident angle is about 70 degrees, the thickness of the pair layer is about 20 nm. The characteristics shown in FIG. 7 are examples, and the present invention is not limited to the characteristics shown in FIG.

  FIG. 8 is a graph showing the relationship between the incident angle of the EUV light 203 and the reflectance. In FIG. 8, the vertical axis indicates the reflectance, and the horizontal axis indicates the incident angle.

  When the incident angle is in the range of 0 degrees (perpendicular to the mirror 510) to 20 degrees, the reflectivity gradually decreases from about 75% to about 70% as the incident angle increases. In the range of the incident angle from 20 degrees to 30 degrees, the reflectance decreases from about 70% to about 55% as the incident angle increases. Further, in the range of the incident angle from 30 degrees to 45 degrees, the reflectivity rapidly decreases from about 55% to about 40% as the incident angle increases. In the range of the incident angle from 45 degrees to 60 degrees, the reflectivity increases from about 40% to about 60% as the incident angle increases. In FIG. 8, the incident angle is shown up to 70 degrees, but in the range of the incident angle of 60 degrees to 80 degrees, the reflectance gradually increases from about 60% to about 65%.

  Therefore, in this embodiment, the angle of the mirror 510 is set so that the incident angle of EUV light is in the range of 0-30 degrees or 60-80 degrees. If the incident angle exceeds 80 degrees, the EUV light does not enter the pair layer, so that the EUV light 203 and the other light 301 that are the functions of the present invention cannot be separated.

  Since the collimating mirror 510 of the present embodiment includes a base portion 512 and a blazed groove 513 each formed of a Mo / Si multilayer film, a plurality of diffraction effects can be used.

  FIG. 9 is an explanatory diagram showing the beam homogenizer function by the fly-eye mirror array 520 and the operation of the pinhole array 530. EUV light 204 and other light 302 reflected by the mirror 510 are incident on each concave mirror 521 of the fly-eye mirror array 520.

  The lights 205 (1) and 205 (2) reflected by the concave mirrors 521 are collected at an intermediate focal point, enter the condenser mirror 540, and are supplied to the mask 600. That is, the light 205 (1) and 205 (2) reflected by the concave mirrors 521 are reflected on the condenser mirror 540 (light 206 (1) and 206 (2)) and are superimposed on the surface of the mask 600. . Thereby, the intensity of the EUV light incident on the mask 600 can be made uniform.

  In FIG. 9, EUV light 204 (1) indicates EUV light incident on the right concave mirror 521, and EUV light 204 (2) indicates EUV light incident on the left concave mirror 521. Similarly, reference numeral 302 (1) is given to other light incident on the right concave mirror 521, and reference numeral 302 (2) is given to other light incident on the left concave mirror 521. For convenience, light incident on the central concave mirror 521 is omitted.

  A pinhole array 530 is arranged at the position of a condensing point group formed by the fly-eye mirror array 520. As shown in the enlarged view of FIG. 10, the condensing point F (521) of each concave mirror 521 and the position of the pinhole 531 are matched. The EUV light 205 coming from the concave mirror 521 passes through the pinhole 531, and the light 302 other than the EUV light is blocked by the wall of the pinhole array 530. That is, only the EUV light 204 whose direction is separated by the mirror 510 can be incident on the condenser mirror 540, and the light 301 other than the EUV light can be blocked by the wall of the pinhole array 530 and converted into heat. As a result, the function of SPF is achieved.

  In this embodiment configured as described above, a predetermined number of Mo / Si pair layers are stacked on the collimating mirror 510 to form the blazed groove 513. Therefore, the collimating mirror 510 only has a function as a mirror that reflects EUV light. In addition, an SPF function for separating EUV light from other light can also be provided. Further, in this embodiment, since the pinhole array 530 is provided between the fly-eye mirror array 520 and the condenser mirror 540, only EUV light can be supplied to the mask 600. As a result, in this embodiment, more EUV light can be supplied to the mask 600 than in the case of using a separate reflection type diffraction grating, and the number of parts can be reduced to manufacture the exposure apparatus 3. Cost can be reduced.

  In this embodiment, the Mo / Si pair layer is laminated on the substrate portion 511 in the range of 100 to 1000 layers to form the blazed groove 513. Therefore, compared with the prior art in which more than 2000 Mo / Si pair layers are stacked, there is no fear that the multilayer film will be peeled off due to the stress in the multilayer film, and the reliability and usability are improved. In addition, since the number of layers is small, the manufacturing cost of the collimating mirror 510 can be reduced.

  In this embodiment, since the collimator mirror 510 has an SPF function, high purity EUV light can be supplied to the exposure apparatus with a single reflection. Therefore, it has higher efficiency than the prior art that reflects EUV light multiple times.

  Further, since the collimating mirror 510 of this embodiment is used in the illumination optical system 500 of the exposure apparatus 3, it is not affected by debris. Therefore, even when the mirror 510 having a special structure as shown in FIG. 4 is employed, it can be used over a long period of time.

  A second embodiment will be described with reference to FIGS. Each embodiment described below corresponds to a modification of the first embodiment. Therefore, the difference from the first embodiment will be mainly described. The difference between this embodiment and the first embodiment is that the blazed groove is concentric and formed so that its angle rises toward the periphery of the mirror 510, and the damper is accompanied by the difference. 560 is newly provided.

  FIG. 11 is an explanatory diagram of an exposure apparatus 3A according to the present embodiment. The damper 560 is located between the collimating mirror 510A and the fly-eye mirror array 520, and is provided at a position where other light 302 separated by the mirror 510A having the SPF function gathers. The damper 560 absorbs light 302 having a wavelength region other than EUV light, such as laser light, deflected by the blazed groove 513 and converts it into thermal energy. The damper 560 is preferably cooled by a cooling mechanism such as a water cooling jacket. On the other hand, for the EUV light 203, the mirror 510A functions as a conventional C2 mirror and is reflected to become parallel light 204.

  FIG. 12 is an enlarged view of the collimating mirror 510A according to this embodiment. Unlike the blazed groove shown in FIG. 6, the blazed groove 513 of the present embodiment is formed so as to rise from the inside to the outside of the mirror, as shown in FIG. 12 (b). In other words, the blazed groove 513 is formed so as to descend downward from the outside toward the inside. Furthermore, as shown in the plan view of FIG. 13, the blazed groove 513 of the present embodiment is formed concentrically.

Since the operation of the mirror 510A is the same as that of the first embodiment, it will be described with reference to FIG. In this embodiment, 850 Mo / Si pair layers are stacked on the substrate portion 511. When the thickness of one layer is 6.9 nm, the dimension H0 is 5.865 μm. In this embodiment, blazed grooves 513 are formed at a pitch of 400 μm for 800 layers from the top (in this case, a thickness of 5.520 μm). As a result, θB
Becomes 13.8 mrad, and 2θB becomes 27.6 mrad.

  Assuming that the incident angle of the light 203 incident on the collimating mirror 510A is α, the EUV light 204 is reflected at an angle α and directed to the fly-eye mirror array 520, and DUV, UV, VIS, and IR light 302A including laser light. Is regularly reflected at an angle of α + 2θB.

  IR light such as CO2 laser light is diffracted at an angle of α + θd (or α−θd) by the blazed groove (pitch 400 μm) (302B). In this embodiment, the wavelength of the CO 2 laser is set to 10.6 μm, so θd is 27.6 mrad.

  Although not shown for convenience, DUV, UV, and VIS light is diffracted by a grating formed by periodic stripes (0.5 μm pitch in the embodiment) of molybdenum and silicon appearing on the surface cut into a blazed groove shape. The EUV light 204 travels at a different angle. Configuring this embodiment like this also achieves the same effects as the first embodiment. Incidentally, as in the first embodiment, a pinhole array 530 is additionally arranged in this second embodiment at the position of a condensing point group formed by the fly-eye mirror array 520, and light 302 other than EUV light is pinhole. It may be blocked by the wall portion of the array 530 to further enhance the effect of SPF.

  A third embodiment will be described with reference to FIG. FIG. 14 is an explanatory view showing an exposure apparatus 3B according to the present embodiment. In this embodiment, a blazed groove is formed in the entrance mirror 570 where the light from the EUV light source device 2 first enters. Unlike the collimating mirrors 510 and 510A of the respective embodiments, the collimating mirror 510B of the present embodiment does not include the blazed groove 513. That is, the condensing mirror 510B of this embodiment is a mirror that only reflects incident light as parallel light, and does not have an SPF function.

  Similar to the collimating mirror 510 described in the first embodiment, the entrance mirror 570 includes a plurality of parallel blazed grooves. That is, about 300 Mo / Si pair films are stacked on a flat substrate, the lower 50 layers are left as they are, and a blazed groove is formed in the upper 250 layers, whereby the entrance mirror 570 is formed. .

  Furthermore, in this embodiment, a second fly-eye mirror array 580 is provided on the optical path between the fly-eye mirror array 530 and the condenser mirror 540. A pinhole array 530A is disposed adjacent to the second fly-eye mirror array 580. In this embodiment, since the plurality of fly-eye mirror arrays 530 and 580 are provided, the intensity of EUV light incident on the mask 600 can be made more uniform.

    The EUV light is reflected by the second fly-eye mirror array 580 and enters the condenser mirror 540. On the other hand, the light 302 other than the EUV light is reflected by the first fly-eye mirror array 580 and then blocked by the pinhole array 530A to be converted into heat.

  Configuring this embodiment like this also achieves the same effects as the above embodiments. However, in this embodiment, since the newly added entrance mirror 570 has the SPF function, the number of reflections increases by one. Therefore, the amount of EUV light incident on the mask 600 is lower than that in each of the embodiments. However, since the entrance mirror 570 of the present embodiment is configured as a plane mirror, it is easier to manufacture and can reduce the manufacturing cost compared to the condensing mirrors of the first and second embodiments.

  A fourth embodiment will be described with reference to FIG. The exposure apparatus 3C of this embodiment includes an entrance mirror 570C configured as a plane mirror, as in the third embodiment. In the entrance mirror 570C, the direction of the blazed groove is changed as in the second embodiment. The entrance mirror 570C includes a concentric blazed groove as shown in FIG. Further, the exposure apparatus 3C is provided with a damper 561 between the collimator mirror 510B and the fly-eye mirror array 530.

  In this embodiment, the traveling direction of EUV light and other light is changed by the flat mirror 570C, and the other light 302 is absorbed by the damper 561. Configuring this embodiment like this also achieves the same effects as the third embodiment.

  A fifth embodiment will be described with reference to FIG. This is a manufacturing method of the mirror 510A having the SPF function of the second embodiment.

  As shown in FIG. 16A, a mirror member 137 formed by coating a substrate portion with a predetermined number of multilayer films is placed on a turntable 400 and rotated F. By using the ion milling apparatus 410 and the mask 420, the multi-layer film is irradiated with an ion beam 430 to perform cutting for forming a blazed groove.

  As shown in FIG. 16B, a triangular pattern 421 that transmits the ion beam 430 is formed on the mask 420. Therefore, the width P (FIG. 4) of the blazed groove can be adjusted as P1 and P2 as shown in FIG. 16 (b) by the relative positional relationship between the pattern 421 and the ion beam 430.

  As shown on the left side of FIG. 16B, if the area where the triangular pattern 421 and the ion beam 430 overlap is reduced, a blazed groove having a narrow width P1 can be formed as shown below. As shown on the right side of FIG. 16B, when the ion beam 430 is superimposed on the entire surface of the triangular pattern 421, a blazed groove having a wide width P2 can be formed.

  Each time the ion milling device 410 and the mask 420 finish forming one blazed groove, the ion milling device 410 and the mask 420 move in the radial direction (lateral direction in FIG. 16) by the groove pitch, and irradiate an ion beam to form a new blazed groove. Form.

  When a blazed groove as shown in FIG. 4 is formed, a mask 420 in which the direction of the triangular pattern 421 is changed is used as shown in FIG. In this embodiment configured as described above, the collimating mirror 510A described in the second embodiment can be easily manufactured.

In the case of the collimating mirror 510 described in the first embodiment, the multilayer-coated mirror member 137 is not mounted on the turntable 400 and rotated in the F direction as described in the present embodiment, but can be manufactured by the following method. The collimating mirror 510 according to the first embodiment can be manufactured by moving the mirror member 137 on a two-axis orthogonal stage that can move in the horizontal direction and processing a linear groove. Further, the mirror 570 and the mirror 570C described in the third and fourth embodiments are different from the above manufacturing method only in that the mirror member 137 is planar, and can be manufactured by substantially the same method as the above manufacturing method. It is.

  A sixth embodiment will be described with reference to FIG. The present embodiment is an effective embodiment when the mirror surface of the multilayer film-equipped mirror member 137 is a curved surface. For example, when the collimating mirror 510A of the second embodiment having a curved surface is manufactured, the position corresponding to the condensing point where the light 302 other than the EUV light gathers is set as the rotation axis 412, and the ion milling device 410 and the mask 420 are arranged. Rotate.

  The ion milling device 410 and the mask 420 are attached to a long cylindrical or rod-like support device 411 so as to be movable in the axial direction. The support device 411 is rotatable in the left-right direction in FIG. 17 about the rotation shaft 412. The rotation axis 412 is set at a distance away from the center of the mirror surface (mirror surface to be completed) of the mirror member 137 by IF. The ion milling device 410 and the mask 420 form a blazed groove while moving in the axial direction and the left-right direction.

  The rotation shaft 412 is set at the same position as the condensing point of the light 302 other than the EUV light that is reflected and collected by the collimator mirror 510A. Thereby, the angle at which the ion beam is incident on the multilayer film can be made constant, and the blazed groove can be stably processed with a constant shape. As a result, it is possible to prevent the shadow portion where the EUV light is blocked by the edge of the blazed groove and cannot enter the collimating mirror 510A.

Similarly, the rotation axis 412 may coincide with the center of curvature of the mirror surface to be processed. Even when the rotation axis 412 is made to coincide with the center of curvature of the mirror surface to be processed, the angle at which the ion beam is incident on the multilayer film can be made constant, and the blazed groove can be stably processed with a constant shape. Can and is effective. The collimating mirror 510 described in the first embodiment is a biaxial orthogonal stage that can move the mirror member 137 in the horizontal direction instead of rotating the mirror member 137 with a multilayer film on the rotary table 400 in this embodiment. It can be manufactured by placing and moving and processing a linear groove.

  A seventh embodiment will be described as another manufacturing method of the mirror 510A having the SPF function of the second embodiment based on FIG. In the present embodiment, as shown in FIG. 17A, the position of the rotation 412 is set to a position that coincides with the center of curvature of the mirror surface. Further, as shown in FIG. 18B, a mask 420A having a length corresponding to the radius of the collimating mirror 510A is used, and a pattern 421 corresponding to each blazed groove is provided on the long mask 420A. Therefore, each blazed groove can be formed simply by irradiating the ion beam while swinging the ion milling device 410 in the radial direction.

  Similarly to the sixth embodiment, this embodiment configured as described above can suppress the occurrence of so-called shadow portions, and can collect and sort EUV light more efficiently. In addition, the angle at which the ion beam is incident on the multilayer film can be made constant, and the distance between the mask 420A and the mirror surface can be made constant, and the blazed groove can be stably processed with a more constant shape. The collimating mirror 510 described in the first embodiment is a biaxial orthogonal stage that can move the mirror member 137 in the horizontal direction instead of rotating the mirror member 137 with a multilayer film on the rotary table 400 in this embodiment. It can be manufactured by placing and moving and processing a linear groove. Further, the mirror 570 and the mirror 570C described in the third and fourth embodiments can be manufactured by substantially the same method as the above manufacturing method, except that the mirror member 137 is planar. .

  An eighth embodiment will be described based on FIG. The mirror 510C of this embodiment includes a triangular wave groove 513C instead of the blazed groove. In the mirror 510 </ b> C of this embodiment, a triangular wave groove 513 </ b> C is integrally formed in a multilayer film that covers the surface of the substrate portion 511. Similar to the first embodiment, in this embodiment, for example, 300 multilayer Mo / Si pair layers are laminated, and 250 layers from the surface are formed in a triangular wave shape or a triangular roof shape. In FIG. 19, axis lines AX1a and AX1b indicate axes perpendicular to the substrate portion 511, and the other axis lines AX2a and AX2b indicate axes perpendicular to the inclined surfaces of the triangular wave-shaped grooves 513C.

  The triangular wave-shaped groove 513C includes two inclined surfaces 513C1 and 513C2. The inclination angles θb2 of the slopes 513C1 and 513C2 can be set to be the same. For convenience of explanation, the left slope in FIG. 19 is referred to as a first slope 513C1, and the right slope in FIG. 13 is referred to as a second slope 513C2.

  The triangular wave-shaped grooves 513C can be formed with a pitch P10 of about 800 μm, for example. In this case, the first slope 513C1 and the second slope 513C2 appear at intervals of 400 μm (= P10 / 2) in a direction parallel to the substrate portion 511. In other words, in the collimating mirror 510C of the present embodiment, the direction of the slope changes in the opposite direction for every pitch P10 / 2.

  Depending on the inclination of each of the inclined surfaces 513C1 and 513C2, light other than the EUV light (driving laser light, DUV, UV, VIS, IR) is regularly reflected on the inclined surface and is different from the reflected light 204 of the EUV light. Head to (302A). The EUV light is Bragg diffracted by the 10 to 50 Mo / Si pair layers stacked on the surface of the portion where the base portion 512 and the triangular wave groove 513C are provided. The efficiency of this diffraction is the same as that of a mirror provided with a Mo / Si pair layer.

  Furthermore, the above-described VIS or IR light is diffracted in a different direction from the EUV light by the triangular wave or triangular roof type 800 um grating structure. Further, due to the grating formed by the stripe pattern of the Mo / Si pair layer exposed on each of the inclined surfaces 513C1 and 513C2, light having a relatively short wavelength (DUV, UV, VIS) other than EUV light and IR is reflected by the EUV light. Diffracted in a direction different from that of the light 204.

  Instead of 800 μm, the pitch P10 may be set to another value such as 400 μm. Furthermore, the pitch does not have to be constant, and may be changed according to the position where the triangular wave groove 513C is formed. Further, the pitches of 513C1 and 513C2 may be different, for example, 300 μm and 500 μm, respectively. By incorporating the mirror of this embodiment configured as described above into the illumination optical system 500, the same effects as those of the first to fourth embodiments can be obtained.

  A ninth embodiment will be described with reference to FIG. The mirror 510D of this embodiment includes a wavy groove 513D. An example of the wave shape is a sine wave shape. Also in the present embodiment, for example, 300 multilayer Mo / Si pair layers are stacked, and 250 layers from the surface are formed in a wave shape. In FIG. 20, axis lines AX1L and AX1R indicate axes perpendicular to the substrate portion 511, and the other axis lines AX2L and AX2R indicate axes perpendicular to the arcuate surface. Reference numeral 513D1 indicates the top of the wave, and reference numeral 513D2 indicates the valley of the wave.

In the mirror 510D of the present embodiment, the inclination of the surface continuously changes at every pitch P11 (for example, 600 μm) like a sine wave. In accordance with the inclination of the arcuate surface, light other than EUV light (driving laser light, DUV, UV, VIS, IR) is reflected (302A) in a direction different from the reflected light 204 of EUV light.

  However, EUV light and other light (driving laser light, DUV, UV, VIS, IR) are in the same direction as EUV light in places where the inclination is partially horizontal, such as the top 513D1 and valley 513D2. Regular reflection.

As described above, the EUV light is Bragg diffracted by the 10 to 50 Mo / Si pair layers stacked on the surface of the portion provided with the base portion 512 and the triangular wave-like groove 513C. The efficiency of diffraction is the same as that of a mirror provided with a Mo / Si pair layer. Further, the other light is diffracted in a different direction from the EUV light by the wavy 600 um period grating structure. In addition, due to the grating formed from the striped pattern of the Mo / Si pair layer exposed on the arc-shaped surface, light of a relatively short wavelength (DUV, UV, VIS) other than EUV light and IR is reflected light of EUV light. Diffracts in a direction different from 204.
By incorporating the mirror of this embodiment configured as described above into the illumination optical system 500, the same effects as those of the first to fourth embodiments can be obtained.

    A tenth embodiment will be described with reference to FIG. In the present embodiment, a plane mirror 190 having the configuration described in FIG. 4 is provided in the EUV light source device 2A. The EUV light 204 reflected by the plane mirror 190 passes through the aperture 160 and is supplied to the exposure apparatus. Light 302 other than EUV light is reflected by the plane mirror 190 and incident on the aperture 160, absorbed by the aperture 160, and converted into heat. The incident angle of the EUV light 203 on the concave mirror 190 is preferably within 30 degrees as shown in FIG.

  An eleventh embodiment will be described with reference to FIG. In the present embodiment, a concave mirror 191 having the configuration described with reference to FIG. 4 is provided in the second chamber 102B of the EUV light source device 2B. The EUV light 203 that has entered the second chamber 102B via the aperture 160 is reflected (204) by the concave mirror 191 and supplied to the exposure apparatus via the other aperture 161. Light other than EUV light is reflected (302) by the concave mirror 191 and incident on the aperture 161 and absorbed. The incident angle of the EUV light 203 on the concave mirror 191 is preferably within 30 degrees as shown in FIG.

  In addition, this invention is not limited to each Example mentioned above. A person skilled in the art can make various additions and changes within the scope of the present invention. For example, both the exposure apparatus and the EUV light source apparatus may be provided with a mirror in which a groove having a predetermined shape is formed in the Mo / Si layer.

1 is an explanatory diagram showing the overall configuration of an EUV exposure system. FIG. Explanatory drawing of an EUV light source device. Explanatory drawing which shows the structure of exposure apparatus. Sectional drawing which expands and shows the blazed groove | channel of a mirror. The top view which shows the blazed groove | channel of a mirror. Explanatory drawing which expands and shows the direction of the blazed groove | channel of a mirror. The characteristic view for setting the thickness of a Mo / Si pair layer according to an incident angle. The characteristic view which shows the relationship between the incident angle of EUV light, and a reflectance. Explanatory drawing which shows the relationship between the optical system for equalizing the intensity | strength of EUV light, and a pinhole array. Explanatory drawing which shows the effect | action of a pinhole array. Explanatory drawing of the exposure apparatus which concerns on 2nd Example. Sectional drawing which expands and shows the direction of the blazed groove | channel of a mirror. The top view which shows the blazed groove | channel of a mirror. Explanatory drawing of the exposure apparatus which concerns on 3rd Example. Explanatory drawing of the exposure apparatus which concerns on 4th Example. Explanatory drawing which shows the manufacturing method of the mirror which concerns on 5th Example. Explanatory drawing which shows the manufacturing method of the mirror which concerns on 6th Example. Explanatory drawing which shows the manufacturing method of the mirror which concerns on 7th Example. Sectional drawing which expands and shows the mirror which concerns on 8th Example. Sectional drawing which expands and shows the mirror which concerns on 9th Example. Explanatory drawing of the EUV light source device which has the mirror which concerns on 10th Example. Explanatory drawing of the EUV light source device which has the mirror which concerns on 11th Example.

Explanation of symbols

  1: EUV exposure system, 2, 2A, 2B: EUV light source device, 3, 3A, 3B, 3C: exposure device, α: incident angle, θB: blazed angle, 100: vacuum chamber, 101: first chamber, 102, 102B: second chamber, 105: damper, 110: driving laser light source, 111: condenser lens, 112: entrance window, 120: target feeder, 130: EUV collector mirror, 132: entrance hole, 511: mirror member 137: Mirror member with multilayer film, 140, 141: Coil for generating magnetic field, 160, 161: Aperture, 170, 171: Vacuum exhaust pump, 180: Gate valve, 200: Droplet, 201: Target plasma, 410: Ion Milling device, 411: support device, 412: rotating shaft, 420, 420A: mask, 421: pattern, 430: ion beam, 400: chamber, 500: illumination optical system, 510, 510A, 510B: mirror, 513, 513C, 513D: grooves of a predetermined shape, 520: fly-eye mirror array, 530: pinhole array, 540: condenser Mirror, 570, 570C: Entrance mirror, 600: Mask, 700: Projection optical system

Claims (7)

A semiconductor exposure apparatus having an illumination optical system using extreme ultraviolet light,
The illumination optical system includes a plurality of extreme ultraviolet light mirrors for reflecting the extreme ultraviolet light,
At least one predetermined extreme ultraviolet light mirror among each of the extreme ultraviolet light mirrors separates extreme ultraviolet light and light of other wavelengths,
A substrate section;
A base portion provided on the one surface side of the substrate portion, and a base portion formed from a first multilayer film provided on the one surface side of the substrate portion;
A reflective portion provided integrally on one side of said base portion, and a reflective portion which is generated by forming a groove having a predetermined shape on the second multilayer film provided on said one side of said base portion Prepared,
The semiconductor exposure apparatus , wherein the groove having the predetermined shape is formed as a triangular wave groove . A semiconductor exposure apparatus having an illumination optical system using extreme ultraviolet light,
The illumination optical system includes a plurality of extreme ultraviolet light mirrors for reflecting the extreme ultraviolet light,
At least one predetermined extreme ultraviolet light mirror among each of the extreme ultraviolet light mirrors separates extreme ultraviolet light and light of other wavelengths,
A substrate section;
A base portion provided on the one surface side of the substrate portion, and a base portion formed from a first multilayer film provided on the one surface side of the substrate portion;
A reflective portion provided integrally on one side of said base portion, and a reflective portion which is generated by forming a groove having a predetermined shape on the second multilayer film provided on said one side of said base portion Prepared,
The semiconductor exposure apparatus , wherein the predetermined-shaped groove is formed as a wavy groove . 3. The semiconductor exposure apparatus according to claim 1, wherein the predetermined extreme ultraviolet light mirror is configured as a mirror having a concave surface for reflecting incident extreme ultraviolet light as substantially parallel light. Given the extreme ultraviolet mirror is configured as a mirror having a plane for reflecting extreme ultraviolet light entering the semiconductor exposure apparatus according to claim 1 or 2. The illumination optical system includes an intermediate condensing point on which the extreme ultraviolet light is collected, and an opening for allowing the extreme ultraviolet light to pass therethrough is provided in the vicinity of the intermediate condensing point. The semiconductor exposure apparatus in any one of Claims 1-4 with which the light-shielding member which has is provided. The first multilayer film and the second multilayer film are integrally formed, and the thickness dimension of the plurality of pair layers constituting each of the first multilayer film and the second multilayer film is that of incident extreme ultraviolet light. The semiconductor exposure apparatus according to claim 1 , which is set according to an angle. 5. The semiconductor exposure apparatus according to claim 1 , wherein a total number of pair layers constituting the first multilayer film and the second multilayer film is in a range of 100 or more and 1000 or less.

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