JP5049213B2 - Organic EL panel and manufacturing method thereof - Google Patents

Description

  The present invention relates to an organic EL panel and a method for manufacturing the same, and more particularly to a method for forming an auxiliary electrode for making the luminance of a screen uniform.

  There are two types of organic EL panels: a bottom emission type that extracts light from the support substrate side and a top emission type that extracts light from the opposite side. In the case of a bottom emission type panel, the first electrode (lower electrode) on the support substrate side is made of a light transmitting material, and the second electrode (upper electrode) on the opposite side of the support substrate is a light reflecting material (for example, a metal film). Consists of. On the other hand, in the case of a top emission type panel, the first electrode is made of a light reflecting material, and the second electrode is made of a light transmitting material.

  When the active matrix method is used as the driving method of the organic EL panel, a thin film transistor (TFT) element is formed between the first electrode and the substrate, so that the top emission type has a larger aperture ratio as the element structure. It is suitable for larger screens. However, in the case of the top emission type, the second electrode needs to be made of a transparent or translucent light transmissive material, and an ITO film or an IZO film is often used.

  However, since ITO and IZO films have a high resistance value, a voltage drop occurs when the screen is enlarged, and there is a problem that the image intensity deteriorates because the light emission intensity differs between the central portion and the peripheral portion of the screen. In order to solve this, it has been proposed to reduce the resistance of the second electrode by providing an auxiliary electrode (auxiliary wiring) made of a low-resistance material and connecting it to the second electrode.

  As a method of providing the auxiliary electrode when forming the upper electrode of the organic EL element, there are a method of directly depositing on the upper electrode and a method of forming the auxiliary electrode before forming the upper electrode. Examples of methods for forming these auxiliary electrodes include “Patent Document 1”, “Patent Document 2”, “Patent Document 3”, “Patent Document 4”, and the like.

Japanese Patent Laid-Open No. 2001-230086 JP 2003-288994 A JP 2004-281402 A JP 2006-331920 A

  As a method for forming the auxiliary electrode, an electrode pattern made of a low resistance material is formed in the circuit board for the organic EL panel, and the electrode pattern is connected to the second electrode of the organic EL element (method A) and There is a method (Method B) of forming an electrode pattern made of a low-resistance material after forming an organic layer of an organic EL element.

  In the case of the method A, a known photoetching method can be used for forming the auxiliary electrode pattern. That is, a low resistance material such as Al or Cu can be formed by a known method such as a sputtering method, and can be formed by a known photoetching method using a photoresist pattern. In this case, the circuit board manufacturing process increases, which causes an increase in the cost of the circuit board. By configuring the auxiliary electrode with the same material as the first electrode of the organic EL element, the process for forming the auxiliary electrode pattern can be reduced, but a process for providing a through hole in the insulating layer (bank) formed thereon is required. It becomes. Further, in order to connect the auxiliary electrode pattern and the second electrode of the organic EL element, it is necessary to remove the organic layer of the organic EL element. This contributes to an increase in manufacturing cost and a decrease in yield.

  In the case of method B, an auxiliary electrode pattern may be formed by performing mask vapor deposition of a low resistance material such as Al or Cu using a metal mask. In this case, the auxiliary electrode pattern may be a lower layer or an upper layer of the second electrode made of a light transmissive material such as an IZO film, an ITO film, or a ZnO film. However, in order not to lower the aperture ratio of the organic EL panel, it is necessary to provide an auxiliary electrode pattern between the pixels. This requires an ultra-high-precision metal mask, which is difficult to realize as the OLED panel has a larger screen and higher definition. As described above, neither the method A nor the method B has found an auxiliary electrode forming method that can be manufactured at a low cost and a high yield.

  The method of previously forming the auxiliary electrode on the drive circuit board can be miniaturized because it can be formed using a well-known photo process, and the top emission type organic EL has an advantage that the aperture ratio is not lowered. However, since it is necessary to form a through hole in an insulating layer such as a bank or a flattening layer and connect the auxiliary electrode and the upper electrode via the through hole, the manufacturing cost of the drive circuit board increases. Further, since the inside of the through hole cannot be cleaned after the organic EL element is formed, there remains a problem in connection reliability within the through hole.

  In the method in which the auxiliary electrode is provided at the time of forming the upper electrode of the organic EL element, the organic layer constituting the organic EL element is damaged by the solvent, moisture, etc., so that the well-known photolithography method cannot be used. For this reason, mask vapor deposition is used. However, as the large screen and high definition progress, the accuracy of the vapor deposition mask becomes limited, and the patterning of the auxiliary electrode becomes impossible.

  The present invention solves the above-described problems, and realizes an organic EL display device that enables formation of an auxiliary electrode even on a high-definition screen and enables high-quality display with less luminance gradient. That is.

  The present invention solves the above-mentioned problems, and specific means are as follows.

  (1) An organic EL substrate including a light emitting layer is formed between a lower electrode and an upper electrode, and an auxiliary electrode for reducing a voltage drop in the upper electrode is formed on the upper electrode. A method of manufacturing an organic EL panel, wherein a shock wave is generated in the first thin film layer by irradiating a laser beam onto a donor substrate on which a first thin film layer including a conductive thin film is formed, and the shock wave generates the first thin film layer. The thin film layer of 1 is peeled from the donor substrate, and the peeled thin film piece is transferred onto the organic EL substrate disposed to face the donor substrate to form the auxiliary electrode. Panel manufacturing method.

  (2) having an organic EL substrate in which an organic EL layer including a light emitting layer is formed between a lower electrode and an upper electrode, and an auxiliary electrode for reducing a voltage drop in the upper electrode is formed on the upper electrode A method for producing an organic EL panel, wherein a shock wave is generated on a surface of a donor substrate by irradiating a laser beam onto a donor substrate on which a first thin film layer is formed, and the first thin film layer is formed on the donor by the shock wave. Peeling from the substrate, transferring the peeled thin film piece onto the organic EL substrate disposed to face the donor substrate, and forming the auxiliary electrode at a predetermined location of the organic EL substrate Manufacturing method of organic EL display panel.

  (3) The organic material according to (2), wherein the donor substrate is composed of a support substrate that transmits the laser light and a second thin film layer that absorbs the laser light formed on the support substrate. Manufacturing method of EL display panel.

  (4) The method of manufacturing an organic EL display panel according to (3), wherein the second thin film layer is a thin film pattern having a predetermined pattern shape.

  (5) The antireflection film for the second thin film layer is formed between the support substrate constituting the donor substrate and the second thin film layer. (3) or (4) Manufacturing method of organic EL display panel.

  (6) The antireflection film includes at least a thin film layer made of any material of silicon oxide, silicon nitride, silicon oxynitride, titanium oxide, and aluminum oxide. Manufacturing method of organic EL display panel.

  (7) The method of manufacturing an organic EL display panel according to (3) or (4), wherein the second thin film layer is roughened on the side of the support substrate.

  (8) The second thin film layer includes a thin film layer made of any material of Al, Cu, Au, Ag, W, Ta, Ti, Ni, Cr, Mo, Fe or an alloy containing these. (3) The manufacturing method of the organic electroluminescent display panel as described in (6).

  (9) The organic EL display according to (2), wherein the donor substrate is a foil-like member, and the foil-like member is a member mainly composed of Ni or a member made of an Fe—Ni alloy. Panel manufacturing method.

  (10) The method for manufacturing an organic EL display panel according to (9), wherein the thickness of the foil-shaped member is 10 μm or more and 50 μm or less.

  (11) In a series of connected equipment, forming the first thin film layer on the donor substrate, and then transferring a thin film piece composed of the first thin film layer peeled from the donor substrate, The method for producing an organic EL display panel according to any one of (1) to (10), wherein the auxiliary electrode is formed.

  (12) An organic EL layer including a light emitting layer is formed between the lower electrode and the upper electrode, and an organic EL substrate on which an auxiliary electrode for reducing a voltage drop in the upper electrode is formed on the upper electrode. A method of manufacturing an organic EL panel, wherein a thin film layer, which is a conductive film formed on a donor substrate, is evaporated by laser ablation, and the auxiliary electrode is formed on the organic EL substrate disposed to face the donor substrate An organic EL display panel manufacturing method characterized by the above.

  (13) An organic EL layer including a light emitting layer is formed between the lower electrode and the upper electrode, and an organic EL substrate on which an auxiliary electrode for reducing a voltage drop in the upper electrode is formed on the upper electrode. A method of manufacturing an organic EL panel, comprising: forming a first thin film layer and a second thin film layer as a conductive film on a donor substrate; and irradiating the first thin film layer with a laser to cause the laser ablation phenomenon. A method of manufacturing an organic EL display panel, comprising: evaporating a first thin film layer; and forming the auxiliary electrode on the organic EL substrate, the second thin film layer being disposed to face a donor substrate. .

  (14) The method of manufacturing an organic EL display panel according to (12) or (13), wherein the first thin film layer is roughened on the side of the support substrate.

  (15) a first electrode made of a conductive thin film, an organic EL layer including a light emitting layer formed on the first electrode, and a second electrode made of a conductive thin film layer formed on the organic layer An organic EL panel in which a display area formed by arranging a plurality of organic EL elements is formed on a circuit board, and a third electrode connected to an electric circuit in the circuit board is in the display area. The second electrode and the third electrode are electrically connected by an auxiliary electrode that is formed apart from the second electrode and is made of a material having a lower electric resistance than the second electrode. Organic EL panel.

  (16) a first electrode composed of a conductive thin film, an organic EL layer including a light emitting layer formed on the first electrode, and a second film composed of a conductive thin film layer formed on the organic layer An organic EL panel in which a display region formed by arranging a plurality of organic EL elements composed of electrodes is formed on a circuit board, wherein the second electrode in the display region is divided into at least two or more blocks, Each of the divided blocks is electrically connected by an auxiliary electrode made of a material having an electric resistance lower than that of the second electrode.

  (17) The organic EL panel according to (15), wherein the second electrode and the third electrode are formed of the same material.

  (18) The organic EL panel according to (16), wherein the second electrode and the auxiliary electrode are formed of the same material.

  (19) The wiring has a disconnection portion, and the disconnection portion is a wiring substrate connected by a metal material, and the metal material is applied to the donor substrate on which the first thin film layer including the conductive thin film is formed. By irradiating a laser beam, a shock wave is generated in the first thin film layer, the first thin film layer is peeled off from the donor substrate by the shock wave, and the peeled thin film piece is disposed facing the donor substrate. A wiring board, wherein the wiring board is formed by being transferred to the wiring board.

  (20) The wiring has a disconnection portion, and the disconnection portion is a wiring substrate connected by a metal material, and the metal material irradiates the donor substrate on which the first thin film layer is formed with laser light. Thus, a shock wave is generated on the surface of the donor substrate, the first thin film layer is peeled off from the donor substrate by the shock wave, and the peeled thin film piece is transferred to the wiring substrate arranged to face the donor substrate. A wiring board characterized by being formed.

  According to the present invention, since the upper electrode is formed by laser transfer, the auxiliary electrode can be formed even when the screen of the organic EL display device has a high definition. Therefore, an organic EL panel having a high-definition screen and a small brightness gradient on the screen can be manufactured.

  Before describing specific embodiments of the present invention, a configuration of a top emission type organic EL display device using an auxiliary electrode to which the present invention is applied will be described. 1 and 2 show an organic EL substrate 100 in which the thin film pattern forming method according to the present invention is applied to auxiliary electrode formation. In the present specification, a device in which an organic EL element is formed on a drive circuit substrate is referred to as an organic EL substrate 100, and a device in which the organic EL substrate is sealed is referred to as an organic EL panel 200. FIG. 1 is a plan view of an essential part of an organic EL substrate 100 to which the present invention is applied, and shows an upper electrode 108, a connection part of a drive circuit board wiring, and an organic EL element forming part. 2A is a cross-sectional view taken along the line AB in FIG. 1, and FIG. 2B is a cross-sectional view taken along the line CD in FIG.

  In FIG. 1, a red pixel 106R, a green pixel 106G, and a blue pixel 106B are arranged in the vertical direction. A second electrode which is the upper electrode 108 is formed so as to cover all the pixels. On the second electrode, an auxiliary electrode extends in the horizontal direction between the pixels. A through hole 112 is formed on the left side of FIG. 1, and a power line (not shown) and the second electrode 108 are electrically connected by the through hole 112.

  In FIG. 2A, a planarization layer 102 made of acrylic, polyimide, or the like is formed on a driver circuit substrate 101 on which a thin film transistor (TFT) or wiring is formed, and a first electrode (on the planarization layer 102 is formed). (Lower electrode) 103 is provided. The first electrode 103 is connected to the TFT in the drive circuit substrate 101 through a through hole (not shown) provided in the planarization layer 102. The first electrode 103 is formed of an ITO film, a metal film (Al, Cr, Mo, etc.), or a laminated film thereof (for example, an ITO / Al film in which an ITO film is laminated on an Al film). A bank 104 made of an insulating thin film made of a silicon oxide film, a silicon nitride film, or the like, or an organic insulating film such as polyimide or acrylic is formed so as to cover the periphery of the pattern of the first electrode 103. Organic films 105, 106, and 107 constituting the organic EL element are formed so as to cover the first electrode 103 in the opening of the bank 104. Reference numeral 106 denotes a light emitting layer, which is separated into 106R, 106G, and 106B corresponding to red, green, and blue. A mask vapor deposition method using a metal mask, an ink jet method, a laser transfer method, a printing method, or the like can be used for the separation film formation of the light emitting layer. These films may contain a hole transport layer, an electron transport layer, a hole blocking layer and the like in addition to the light emitting layer. The organic films 105 and 107 are common layers formed in common for the red light emitting element, the green light emitting element, and the blue light emitting element, and are a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and the like. On the organic film 107, a second electrode (upper electrode) 108 made of a light-transmitting conductive material such as IZO, ITO, ZnO or the like is formed. The second electrode 108 extends to the through hole portion 112 provided in the bank layer 104 and the planarizing layer 102 and is connected to the wiring 111 in the drive circuit board 101 through the through hole portion 112. Between the light emitting elements 106 on the second electrode 108, an auxiliary electrode 109 made of a low resistance material such as Al or Cu is provided. In this example, the auxiliary electrode 109 is not formed on the through-hole portion 112, but it may be formed.

  FIG. 3 shows a first embodiment of a thin film pattern forming method according to the present invention. This figure is a process flow diagram showing a method for forming a thin film pattern that can be used in the method for forming the auxiliary electrode 109. 11 is a translucent support substrate that transmits laser light used in the process, 12 is a first thin film layer made of a material for forming the auxiliary electrode 109, and 13 is a thin film formed by peeling the first thin film layer. In the figure, reference numeral 300 denotes a donor substrate composed of a translucent support substrate 11 and a first thin film layer 12. Reference numeral 10 denotes a film forming chamber, and an atmosphere suitable for forming a thin film pattern with transfer of a thin film piece is maintained.

  In this embodiment, a shock wave is generated by absorbing laser light in a first thin film layer including at least one conductive thin film formed on a supporting substrate that transmits laser light, and the first thin film is generated by this energy. The thin film pattern is formed by peeling the layer from the donor substrate 300 and transferring and attaching the peeled piece onto the device substrate arranged to face the donor substrate 300.

  The manufacturing process shown in FIG. 3 will be described in detail below. In FIG. 3A, first, a support substrate 11 capable of transmitting the laser beam to be used is prepared. A quartz plate is used when a short wavelength laser having a wavelength of 400 nm or less, such as the third harmonic or the fourth harmonic of an excimer laser or a YAG laser, is used. When using a semiconductor laser having a second harmonic of a YAG laser and a wavelength of 700 to 900 nm, well-known heat-resistant glass, alkali-free glass, or soda glass can be used. Here, the second harmonic (532 nm) of the YAG laser is used.

  In FIG. 3B, a first thin film layer 12 made of a material used as the auxiliary electrode 109 is formed on the support substrate 11. Thus, the donor substrate 300 for forming the auxiliary electrode is completed. As the material of the first thin film layer 12, Al, Cu or the like having a low resistance is used.

  In FIG. 3C, the organic EL substrate 100 provided with the organic EL element forming portion 110 on the drive circuit substrate 101 and the donor substrate 300 are placed in the auxiliary electrode forming chamber 10 to face each other with a predetermined gap. Next, evacuation is performed to a pressure of 100 Pa or less, and an atmosphere for transferring the first thin film layer 12 provided on the donor substrate 300 to the organic EL substrate is produced. This atmosphere is preferably a high vacuum in order to suppress the influence of residual gas. The transfer atmosphere of the thin film piece may be atmospheric pressure, but the resistance to transfer becomes large and it is affected by residual gas.

  In FIG. 3D, the laser beam LA (for example, the second harmonic of the YAG laser, wavelength: 532 nm) is applied from the back side of the donor substrate 300 (the surface opposite to the surface on which the first thin film layer is formed). Irradiate a predetermined place (place where an auxiliary electrode pattern is formed) of one thin film layer 12 to induce a shock wave. The irradiation place of the laser beam LA may be specified by an address designated by computer control, or a light shielding mask provided with an opening corresponding to the auxiliary electrode pattern may be used. As the wavelength of the laser beam LA, one that is absorbed by the first thin film layer 12 is selected. As the laser, a pulse laser is used, and the power, the pulse width, and the repetition frequency are set so as to prevent the temperature of the first thin film layer 12 from rising and generate a shock wave. In order to prevent the temperature rise of the first thin film layer 12 and generate a shock wave, it is of course possible to lower the laser power by increasing the absorption rate of the laser light by the second thin film layer 12, It is effective to narrow the pulse width within the repetition frequency at which elastic waves are generated in the first thin film layer 12. This is because the cooling time can be obtained by making the non-irradiation time sufficiently longer than the laser irradiation time. That is, it is possible to cool the portion whose temperature has been increased by laser irradiation.

  In FIG. 3 (e), a shock wave is induced in the portion of the first thin film layer 12 irradiated with the laser beam LA, and the first thin film layer 12 laminated at the place is peeled off by the generated shock wave. . The thin film piece 13 formed by peeling off the first thin film layer 12 obtains energy from the generated shock wave and jumps out toward the organic EL substrate 100. In order to peel a part of the first thin film layer 13 as a thin film piece, the adhesion strength between the first thin film layer 12 and the support substrate 11 is lower than the sound pressure of the shock wave generated, It is required that the film strength is higher than the sound pressure of the shock wave generated, and the film strength of the first thin film layer 12 at the shock wave generation boundary is lower than the sound pressure of the shock wave generated. In order to transfer the thin film piece 13 generated by peeling off a part of the first thin film layer 12 from the donor substrate 300 to the organic EL substrate 100, the donor substrate 300 and the organic EL substrate may be brought into contact with each other. However, in order to transfer efficiently, it is necessary that the organic EL substrate 100 and the donor substrate 300 face each other as close as possible without contacting each other. If possible, the thickness is preferably 0.01 to 0.1 mm.

  In FIG. 3 (f), the thin film piece 13 protruding toward the organic EL substrate 100 moves in the space between the donor substrate 300 and the organic EL substrate 100, reaches the organic EL substrate 100 and adheres thereto. Thereby, the auxiliary electrode 109 is formed on the organic EL substrate 100.

  Finally, in FIG. 3G, the organic EL substrate 100 on which the auxiliary electrode 109 is formed is taken out from the film forming chamber 10 and sent to the next sealing step. As a result, the organic EL panel 200 schematically shown in FIGS. 9 to 11 is completed.

  Since the first thin film layer 12 is used as an auxiliary electrode, it is required to have a lower resistance than the transparent conductive film that is the second electrode 108 of the organic EL element. As such a material, Au, Ag, W, Ta, Ti, Ni, Cr, Mo, or the like can be used in addition to Al and Cu taken up in the description of the above process.

  In order to generate a shock wave in the first thin film layer 12, the first thin film layer 12 needs to absorb laser light. For this purpose, it is necessary to use a material having a high absorption rate for laser light and to prevent reflection of the laser light at the incident surface of the first thin film layer 12.

  In order to increase the laser light absorption of the first thin film layer 12, it is effective to increase the power, but it also increases the temperature, which is not preferable. In the case of Al, a semiconductor laser of 800 to 900 nm is used, and for metals such as Ni and Cu, a laser having a wavelength shorter than the second harmonic of YAG is used. It is preferable to combine lasers.

  In order to prevent the reflection of the laser beam on the incident surface of the first thin film layer 12, it is effective to insert an antireflection film between the support substrate 11 and the first thin film layer 12. By using W, Ta, Ti, Ni, Cr, Mo, C, or the like as an insertion film, a material having a high visible light reflectance such as Al can be used for the second harmonic of YAG. When these metal films are inserted, a shock wave is generated in the metal film. In addition, a conductive transparent thin film such as ITO, IZO, or ZnO, or a transparent insulating film such as a silicon nitride film, a silicon oxide film, a silicon oxynitride film, a titanium oxide film, or an aluminum oxide film can be used as the antireflection film. In this case, the insertion film transmits the laser beam and prevents reflection of the laser beam by using an interference effect.

  Further, in order to prevent the reflection of the laser beam on the incident surface of the first thin film layer 12, it is also effective to make the incident surface side of the laser beam of the first thin film layer 12 rough. For this purpose, mechanical roughening of the support substrate surface, application / ceramicization of polysilazane, ceramic formation by a sol-gel method, and the like are effective.

  Since the incident surface of the laser beam of the first thin film layer 12 is the surface of the auxiliary electrode, reducing the reflectance of the incident surface of the laser beam of the first thin film layer 12 reduces the reflectance of the surface of the auxiliary electrode. An effect can be obtained.

  In order for the first thin film layer 12 to be peeled off by a shock wave, the first thin film layer 12 must not be destroyed by the generated shock wave energy, but it must be cut at the shock wave generation boundary. However, in the case of a soft film such as Al, it may be difficult to cut by a shock wave.

  The process for solving this is shown in FIG. 4 and FIG. FIG. 4 shows a thin film pattern forming method shown in FIG. 3 in which a patterned underlying thin film layer 14 is inserted between the first thin film layer 12 and the support substrate 11. The underlying thin film layer 14 is patterned and is made of a material that transmits or absorbs laser light and generates a shock wave. When a shock wave is generated in the underlying thin film layer 14, only the first thin film layer 12 may be peeled off and transferred, or the laminated film of the underlying thin film layer 14 and the first thin film layer 12 may be peeled and transferred. By doing so, a step is generated at the pattern boundary of the underlying thin film layer 14, and the cutting of the first thin film layer 12 at the pattern boundary becomes easy. In order to make this effect more effective, it is desirable that the cross-sectional shape of the pattern of the underlying thin film layer 14 be steep or inversely tapered.

  FIG. 5 shows that the first thin film layer 12 is patterned into an auxiliary electrode pattern shape in the thin film pattern forming method according to the present invention shown in FIG. This eliminates the problem of cutting the first thin film layer 12 when the first thin film layer 12 is peeled off. In this case, as shown in FIGS. 6 and 7, the cross-sectional shape of the auxiliary electrode can be a forward taper or a reverse taper.

  FIG. 6A shows an example in which a thin film layer 121 having a reverse-tapered cross-sectional shape is formed on a glass substrate. Then, a shock wave is generated by irradiating the thin film layer 121 with a laser, and a forward tapered auxiliary electrode 109 is formed on the circuit board 101 as shown in FIG.

  FIG. 6B shows an example in which a thin film layer 121 is formed on a base foil 15 that generates vibration. A forward-tapered auxiliary electrode 109 is formed on the circuit board 101 by a shock wave generated by a laser. The base foil 15 in FIG. 6B is irradiated with a laser, and a forward tapered auxiliary electrode 109 is formed on the circuit board 101 by a shock wave generated by the laser. FIG. 6C shows an example in which a thin film layer 121 is formed on the base layer 122 formed on the glass substrate 11. 6C is irradiated with laser, and a forward-tapered auxiliary electrode 109 is formed on the circuit board 101 by a shock wave generated by the laser.

  FIG. 7 shows a case where the reverse-tapered auxiliary electrode 109 is formed on the organic EL substrate 100, and the process is the same as described in FIG.

  Returning to FIG. 5, the first thin film layer 12 is peeled and transferred, and then attached to the upper electrode 8 of the organic EL element forming portion 110 formed on the drive circuit substrate 101. The upper electrode 8 is formed of a light-transmitting conductive film such as IZO. In order to increase the adhesion of the first thin film layer 12 to the upper electrode 8, it is effective to clean the surface of the first thin film layer 12, and the sputtering or vapor deposition method is performed immediately before the laser peeling transfer process. It is effective to form by. It is also effective to cover the surface of the first thin film layer 12 formed on the transparent support substrate 11 with a film having good compatibility with a transparent conductive film such as IZO and good adhesion.

  In this embodiment, the auxiliary electrode 109 is formed on the upper electrode 108 of the organic EL element as shown in FIG. 2, but after forming the auxiliary electrode 109 according to this method as shown in FIG. The upper electrode 108 may be formed.

As described above, according to the formation of the auxiliary electrode according to the present invention, the following effects can be obtained, so that the auxiliary electrode can be increased in definition and formed on a large-area substrate, and the high quality of the organic EL panel can be obtained. Can contribute to the increase in area and area.
(1) There is no need to use a metal mask (evaporation mask) that is difficult to miniaturize and increase in area.
(2) Since vacuum deposition or sputtering is not used, the temperature of the device substrate on which the auxiliary electrode is formed can be kept low.
(3) The auxiliary electrode is formed while maintaining the layer configuration of the first thin film layer formed on the donor substrate. Since there are few restrictions on forming a thin film layer on the donor substrate, a stacked structure using various films can be manufactured. Thereby, formation of a multilayer auxiliary electrode and an antireflection layer, insertion of an adhesion layer, and the like become possible.

  The organic EL panel 200 is completed by sealing the organic EL substrate on which the auxiliary electrode according to the present invention is formed with sealing glass. Examples of forming the organic EL panel 200 by sealing the organic EL substrate according to the present invention are shown in FIGS. FIG. 9 shows that the driving circuit board 101 provided with the organic EL element having the auxiliary electrode 109 and the sealing glass 113 are bonded together using a sealant (not shown), and the sealing between the driving circuit board 101 and the sealing glass 113 is performed. The stop space 114 is filled with an inert gas such as nitrogen.

  FIG. 10 shows the organic EL element forming portion of the drive circuit board 101 provided with the organic EL element having the auxiliary electrode 109 covered with the resin sheet 114. As the resin sheet, an epoxy polymer compound, an acrylic polymer compound, a polyimide polymer compound, or the like can be used. An inorganic insulating thin film such as a silicon-based insulating layer (silicon nitride film, silicon oxide film, silicon nitride oxide film) or aluminum oxide film may be interposed between the resin sheet 114 and the upper electrode 108 / auxiliary electrode 109. . Further, instead of the sealing glass 113, a plastic or the like provided with a gas barrier layer may be used.

  In FIG. 11, the organic EL element forming portion of the drive circuit substrate 101 provided with the organic EL element having the auxiliary electrode 109 is covered with the thin film sealing layer 115, and the organic EL panel 200 can be thinned. As the thin film sealing layer 115, the above-described inorganic insulating thin film, organic insulating thin film such as polyimide or acrylic may be used. Actually, it is used as a multilayer film of an inorganic insulating thin film and an organic insulating thin film. In the embodiment shown in FIGS. 10 and 11, since the auxiliary electrode 9 is pressed by a resin sheet or a thin film sealing layer, the effect of increasing the adhesion of the auxiliary electrode 9 can be obtained.

  FIG. 12 is a process flow diagram showing a second embodiment of the method for forming a thin film pattern according to the present invention. In the first embodiment, a shock wave is generated in the first thin film layer 12 which is a member of the auxiliary electrode 9, but in this embodiment, the shock wave is generated by causing the support substrate 15 to absorb the laser light. When the second harmonic of YAG is used as the laser to irradiate, a large shock wave can be generated in Ni or Fe-Ni alloy. That is, the support substrate 15 is made of a Ni plate, a 42 alloy, or an Fe-Ni alloy such as invar material, and the first thin film layer 12 is formed thereon. Since a shock wave is generated on the laser irradiation surface side of the support substrate 15, in order to peel and transfer the first thin film layer 12 by the shock wave, the opposite surface of the support substrate 15 (the first thin film layer 12 is formed). It is necessary to transmit a shock wave to the surface. Therefore, the thickness of the support substrate 15 cannot be increased, and is desirably 0.2 mm or less. The thickness of the support substrate 15 is more preferably 10 μm to 50 μm. Further, if a tension is applied to the support substrate 15, the power of the irradiated laser can be lowered.

  As shown in FIGS. 12A and 12B, the thin film layer 12 is formed on the support substrate 15. Thereby, the donor substrate 1200 is formed. The organic El substrate 100 is placed opposite to the evacuated process chamber (FIG. 12 (c)), and the support substrate 15 is irradiated with a laser (FIG. 12 (d)). 12 (e)) adheres to the organic El substrate 100 (FIG. 12F), and then the organic El substrate 100 is taken out of the process chamber.

  FIG. 13 shows the first thin film layer 12 patterned into the pattern shape of the auxiliary electrode 109 in the thin film pattern forming method shown in FIG. The first thin film layer in FIG. This eliminates the problem of cutting the first thin film layer 12 when the first thin film layer 12 is peeled off. The process from FIG. 13A to FIG. 13G is the same as that described in FIG. 12 except that the shape of the first thin film layer is 121. In this case, as shown in FIGS. 6 and 7, the cross-sectional shape of the auxiliary electrode can be a forward taper or a reverse taper. FIG. 6 (b), FIG. 6 (d), FIG. 7 (b), and FIG. 7 (d) show this state.

  The first thin film layer 121 is peeled and transferred by the shock wave generated on the support substrate 15, and the first thin film layer 12 is peeled and transferred using the shock wave generated on itself. Is different. Others are the same as the first embodiment, and the same effects can be obtained.

  FIG. 14 shows a third embodiment of the thin film pattern forming method according to the present invention. This figure is a process flow diagram showing a method for forming a thin film pattern that can be used in the method for forming the auxiliary electrode 109. 11 is a translucent support substrate that transmits laser light used in the process, 12 is a first thin film layer made of a component of the auxiliary electrode 109 and a low resistance material, and 140 is a second thin film layer that absorbs the laser light. Reference numeral 1400 denotes a donor substrate composed of the translucent support substrate 11, the second thin film layer 140, and the first thin film layer 12. Reference numeral 10 denotes a film forming chamber, and an atmosphere suitable for forming a thin film pattern with transfer of a thin film piece is maintained.

  In FIG. 14A, a second thin film layer 140 that absorbs laser light used in the process is formed on one main surface of the translucent support substrate 11. The second thin film layer 140 is made of a metal such as Mo, W, Ti, Ni, Ta, Cr, Cu, Au, Al, Ag, Fe or an alloy containing these or an alloy containing these by sputtering or vacuum deposition, A film can be formed using a known technique such as a plating method.

  In FIG. 14B, a first thin film layer 13 made of a material used as the auxiliary electrode 109 is formed on the second thin film layer 12. This completes a donor substrate 1400 for forming the auxiliary electrode. As the material of the first thin film layer 12, Al having a low resistance is used.

  In FIG. 14C, the organic EL substrate 100 provided with the organic EL element forming portion 110 on the drive circuit substrate 101 and the donor substrate 1400 are placed in the auxiliary electrode forming chamber 10 so as to face each other with a predetermined gap. Next, evacuation is performed to a pressure of 100 Pa or less, and an atmosphere for transferring the first thin film layer 12 provided on the donor substrate 1400 to the organic EL substrate is produced. This atmosphere is preferably a high vacuum in order to suppress the shadow effect of the residual gas. It should be noted that the transfer atmosphere of the thin film piece may be atmospheric pressure, but it should be noted that the resistance to transfer is increased and that it is affected by residual gas.

  In FIG. 14 (d), the laser beam LA (for example, the second harmonic of the YAG laser, wavelength: 532 nm) is applied from the back side of the donor substrate 1400 (the surface opposite to the surface on which the first thin film layer is formed). Irradiate a predetermined place (place where the auxiliary electrode pattern is formed) of the second thin film layer 140 to induce a shock wave. The irradiation place of the laser beam LA may be specified by an address designated by computer control, or a light shielding mask provided with an opening corresponding to the auxiliary electrode pattern may be used. As the wavelength of the laser beam LA, one that is absorbed by the second thin film layer 140 is selected.

  As the laser, a pulse laser is used, and the power, the pulse width, and the repetition frequency are set so as to prevent the temperature rise of the second thin film layer 140 and generate a shock wave. In order to prevent the temperature rise of the second thin film layer 140 and generate a shock wave, it is of course possible to lower the laser power by increasing the absorption rate of the laser light by the second thin film layer 140, It is effective to narrow the pulse width within the repetition frequency at which elastic waves are generated in the second thin film layer 140.

This is because the cooling time can be obtained by making the non-irradiation time sufficiently longer than the laser irradiation time. That is, it is possible to cool the portion whose temperature has been increased by laser irradiation. Further, in order to generate a shock wave in the second thin film layer 140, the adhesive strength between the second thin film layer 140 and the support substrate 11 is set so that the second thin film layer 140 does not peel off due to the sound pressure of the generated shock wave. Must be raised. Further, it is required that the ablation threshold of the second thin film layer 140 is sufficiently larger than the sound pressure of the shock wave that is generated.
In FIG. 14 (e), a shock wave is induced in the portion of the second thin film layer 140 irradiated with the laser beam LA, and the first thin film layer 12 laminated at the place is peeled off by the generated shock wave. . The thin film piece 13 formed by peeling off the first thin film layer 12 obtains energy from the shock wave and jumps out toward the organic EL substrate 100. In the second thin film layer 140, a shock wave is generated on the surface opposite to the surface on which the first thin film layer 12 is formed. Therefore, the second thin film layer 140 needs to have a thickness that can transmit the vibration of the generated shock wave to the opposite side. Considering the film stress, film strength, and thin film formation method, the thickness may be 0.1 to 50 μm. Further, in order to peel a part of the first thin film layer 12 as a thin film piece, the adhesion strength between the first thin film layer 12 and the second thin film layer 140 is lower than the sound pressure of the shock wave generated, the first The film strength of the thin film layer 12 is higher than the sound pressure of the shock wave generated, the film strength of the first thin film layer 12 at the shock wave generation boundary is lower than the sound pressure of the shock wave generated, the first thin film layer 12 and The adhesion strength of the second thin film layer 140 is required to be lower than the adhesion strength of the support substrate 11 and the second thin film layer 140. In order to transfer the thin film piece 13 generated by peeling off a part of the first thin film layer 12 from the donor substrate 1400 to the organic EL substrate 100, the donor substrate 1400 and the organic EL substrate may be brought into contact with each other. However, in order to transfer efficiently, it is necessary that the organic EL substrate 100 and the donor substrate 1400 face each other as close as possible without contacting each other. If possible, the thickness is preferably 0.01 to 0.1 mm.

  In FIG. 14 (f), the thin film piece 13 protruding toward the organic EL substrate 100 moves in the space between the donor substrate 1400 and the organic EL substrate 100, reaches the organic EL substrate 100 and adheres thereto. Thus, the auxiliary electrode 109 was formed on the organic EL substrate 100.

  In FIG. 14G, the organic EL substrate 100 on which the auxiliary electrode 109 is formed is taken out from the film forming chamber 10 and sent to the next sealing step. As a result, the organic EL panel 200 schematically shown in FIGS. 9 to 11 is completed.

  FIG. 15 shows a pattern of the second thin film layer 140 that absorbs laser light in the method for forming a thin film pattern according to the present invention shown in FIG. 14, which is shown in FIG. 3 in the first embodiment. It corresponds to. A patterned second thin film layer is shown at 141. Accordingly, also in this case, only the first thin film layer 12 may be peeled and transferred, or the laminated film of the patterned second thin film layer 141 and the first thin film layer 12 may be peeled and transferred. By doing so, a step is generated at the pattern boundary of the patterned second thin film layer 141, and the cutting of the first thin film layer 12 at the pattern boundary becomes easy. In order to make this effect more effective, it is desirable that the cross-sectional shape of the pattern of the patterned second thin film layer 141 is steep or inversely tapered.

  FIG. 16 shows a pattern of the first thin film layer 12 in the method of forming a thin film pattern according to the present invention shown in FIG. 14, and corresponds to that shown in FIG. 5 in the first embodiment. ing. A patterned first thin film layer is indicated at 121. This eliminates the problem of cutting the first thin film layer 12 when the first thin film layer 12 is peeled off. In this case, as shown in FIGS. 6 and 7, the cross-sectional shape of the auxiliary electrode can be a forward taper or a reverse taper. FIG. 6 (c), FIG. 6 (d), FIG. 7 (c), and FIG. 7 (d) show examples.

  As described above, in this embodiment, the second thin film layer 140 that absorbs the laser light and the first thin film layer 12 including at least one conductive thin film are formed on the support substrate 11 that transmits the laser light. A thin film piece consisting of a part of the first thin film layer 12 formed by sequentially laminating to form a donor substrate 1400 and generating a shock wave in the second thin film layer 140 by irradiating a pulse laser beam and peeling off by this energy The auxiliary electrode 109 is formed by transferring and adhering 13 to the organic EL substrate 100 arranged to face the donor substrate 1400. That is, it corresponds to the second embodiment in which the support substrate that absorbs the laser light is formed into a thin film and formed on the translucent support substrate 11. Therefore, also in the present embodiment, the effects obtained in the first embodiment and the second embodiment can be obtained.

  FIG. 17 shows a process flow showing a fourth embodiment of the thin film pattern forming method according to the present invention. In this embodiment, the first thin film layer including at least one conductive thin film formed on a support substrate that transmits laser light is made of a material that can be easily evaporated by laser ablation, and the first thin film layer is formed by laser ablation. Is evaporated to form a thin film pattern (auxiliary electrode) on the device substrate disposed opposite the donor substrate. The manufacturing process will be described below with reference to FIG.

  In FIG. 17A, a support substrate 11 capable of transmitting the laser beam to be used is prepared. A quartz plate is used when a short wavelength laser having a wavelength of 400 nm or less, such as the third harmonic or the fourth harmonic of an excimer laser or a YAG laser, is used. When using a semiconductor laser having a second harmonic of a YAG laser and a wavelength of 700 to 900 nm, well-known heat-resistant glass, alkali-free glass, or soda glass can be used. Here, the second harmonic (532 nm) of the YAG laser is used.

  In FIG. 17B, the first thin film layer 12 made of a material used as the auxiliary electrode 109 is formed on the support substrate 11. Thus, a donor substrate 1700 for forming the auxiliary electrode is completed. As the material of the first thin film layer 12, Cr, Ti, Ta, Ni, or the like having a low thermal conductivity, a small specific heat, and a relatively low ablation threshold is used.

  In FIG. 17C, the organic EL substrate 100 provided with the organic EL element forming portion 110 on the drive circuit substrate 101 and the donor substrate 1700 are placed in the auxiliary electrode forming chamber 10 so as to face each other with a predetermined gap. Next, evacuation is performed to a pressure of 100 Pa or less, and an atmosphere for transferring the first thin film layer 13 provided on the donor substrate 200 to the organic EL substrate is produced. This atmosphere is preferably a high vacuum in order to suppress the influence of residual gas. Note that the transfer atmosphere of the thin film piece may be atmospheric pressure, but attention must be paid to the fact that resistance to transfer increases and the influence of residual gas.

  In FIG. 17D, the laser beam LA (for example, the second harmonic of the YAG laser, wavelength: 532 nm) is applied from the back side of the donor substrate 1700 (the surface opposite to the surface on which the first thin film layer is formed). Irradiate a predetermined place (place where an auxiliary electrode pattern is formed) of one thin film layer 12. The irradiation place of the laser beam LA may be specified by an address designated by computer control, or a light shielding mask provided with an opening corresponding to the auxiliary electrode pattern may be used. As the wavelength of the laser beam LA, one that is absorbed by the first thin film layer 12 is selected. A pulse laser is used as the laser, and the power, pulse width, and repetition frequency are set in order to prevent the temperature of the first thin film layer 12 from rising. Ablation evaporation 170 occurs in the place where the laser beam LA of the first thin film layer 12 is irradiated.

  In FIG. 17 (e), the evaporated particles 170 ablated and evaporated are deposited as a thin film on a predetermined place of the organic EL substrate 100 arranged to face each other. In order to deposit the evaporated particles 170 ablated and evaporated on the organic EL substrate 100 as a thin film, the donor substrate 1700 and the organic EL substrate 100 may be brought into contact with each other. However, in order to transfer efficiently, it is necessary that the organic EL substrate 100 and the donor substrate 300 face each other as close as possible without contacting each other. If possible, the thickness is preferably 0.01 to 0.1 mm.

  In FIG. 17 (f), the evaporated particles 170 that have jumped out toward the organic EL substrate 100 move in the space between the donor substrate 1700 and the organic EL substrate 100 and reach the organic EL substrate 100 and adhere thereto. Thus, the auxiliary electrode 109 was formed on the organic EL substrate 100.

  In FIG. 17G, the organic EL substrate 100 on which the auxiliary electrode 109 is formed is taken out from the film forming chamber 10 and sent to the next sealing step. As a result, the organic EL panel 200 schematically shown in FIGS. 9 to 11 is completed.

  FIG. 18 shows an example in which the thin film pattern forming method according to the present invention shown in FIG. 17 is patterned as the first thin film layer 12 for forming the auxiliary electrode. A patterned first thin film layer is indicated at 121. The process is the same as that shown in FIG. 17 except that the first thin film layer 12 is patterned into a predetermined shape.

  In Examples 1 to 3, the thin film pieces peeled off from the first thin film layer 12 are transferred without being destroyed, and deposited on the device substrate, so that the energy of the laser is lowered or a material having a high ablation threshold is used. Ablation evaporation is prevented from occurring in the first thin film layer 12 and the second thin film layer 140. On the other hand, in this embodiment, the first thin film layer 12 is formed by ablation evaporation, which is a technique similar to vacuum evaporation. Therefore, when the first thin film layer 12 is a multilayer film, the auxiliary electrode 109 cannot be formed with the same laminated structure in this embodiment.

  FIG. 19 shows a modification of the thin film pattern forming method using laser ablation shown in FIG. Since metal films with low resistance such as Al and Cu have a high melting point and excellent thermal conductivity, high energy is required when evaporated by laser ablation, and the film forming atmosphere becomes high temperature. In order to solve this problem, a fourth thin film layer 191 which is easily evaporated by laser ablation is inserted between the first thin film layer 12 and the support substrate 11.

  As the fourth thin film layer 191, an organic film such as a material (Cr, Ti, Ta, Ni or the like) described in FIG. 17 or polyimide can be used. The process flow is basically the same as that shown in FIG. However, in this example, the fourth thin film layer 191 is ablated and evaporated by laser ablation, and the first thin film 12 is peeled off from the donor substrate 1700 by this energy, and a device substrate (facing the donor substrate) ( A thin film pattern (auxiliary electrode 109) is formed on the organic EL substrate 100).

  In this example, the first thin film layer 12 and the fourth thin film layer 191 are solid films, but they may be used after being patterned. In the same configuration as the donor substrate 300 shown in FIG. 15, when the patterned second thin film layer 141 is ablated and evaporated, the cutting of the first thin film layer 12 at the pattern boundary of the second thin film layer 141 is performed. This facilitates pattern formation on the device substrate (organic EL substrate 100). In this embodiment, the ablation evaporation of the fourth thin film layer is an energy source, and peeling, transfer, and adhesion of the first thin film layer 12 are basic processes for forming the auxiliary electrode.

  FIG. 20 shows a first structural example of the organic EL panel 200 for enhancing the resistance reduction effect of the upper electrode 108 (second electrode) of the organic EL element by the auxiliary electrode 109 formed by the thin film pattern forming method according to the present invention. It is shown by the principal part top view. FIG. 21A shows a cross section taken along the line AB in FIG. 20, and FIG. 21B shows a cross section taken along the line CD in FIG. In this example, the third electrode 1080 connected to the electric circuit in the circuit board is provided apart from the second electrode (upper electrode 108) in the display area of the organic EL panel 200, and the second electrode ( The second electrode 108 and the third electrode 1080 are electrically connected by an auxiliary electrode 109 made of a material having a lower electrical resistance than the upper electrode 108).

  FIGS. 22 and 23 show a modification of the first structural example shown in FIGS. 20 and 21 and show an example where the auxiliary electrode 109 is formed intermittently. 22 is a plan view of the main part, FIG. 23 (a) is a cross section taken along the line AB in FIG. 22, and FIG. 23 (b) is a cross section taken along the line CD in FIG. According to the structure shown in FIGS. 22 and 23, the length of the auxiliary electrode can be reduced, and the thin film piece to be the auxiliary electrode 109 can be easily transferred by the laser.

  According to such a configuration, the third electrode 1080 connected to the electric circuit in the drive circuit board, the pattern side wall of the upper electrode 108, and the auxiliary electrode 109 are in contact with each other, and the third region is formed by electric field concentration in this portion. The contact resistance between the electrode 1080 and the auxiliary electrode 109 and the contact resistance between the upper electrode 108 and the auxiliary electrode 109 can be lowered. That is, the effect of reducing the resistance by the auxiliary electrode 109 of the upper electrode 108 can be obtained.

  FIG. 24 shows a second structure example of the organic EL panel 200 for enhancing the resistance reduction effect of the upper electrode 108 (second electrode) of the organic EL element 100 by the auxiliary electrode 109 formed by the thin film pattern forming method according to the present invention. 25 (a) is a cross-sectional view of the main part shown in FIG. 24, and FIG. 25 (b) is a cross-sectional view of the main part shown in FIG. Indicates.

  In this example, the second electrode (upper electrode 108) in the display area of the organic EL panel 200 is divided, and the divided second electrode is formed by the auxiliary electrode 109 made of a material having a lower electrical resistance than the second electrode. The electrodes (upper electrode 108) are electrically connected. The second electrode 108 is divided so that the extending direction of the pattern side wall of the electrode and the extending direction of the auxiliary electrode 109 are substantially orthogonal.

  In the case of the present embodiment, the effect of reducing the contact resistance of the upper electrode 108 by the auxiliary electrode 109 is enhanced by bringing the auxiliary electrode 109 into contact with the divided pattern side wall of the upper electrode 108. Also in this case, the electric field concentration between the pattern side wall of the upper electrode 108 and the auxiliary electrode 109 is the reason for reducing the contact resistance.

  FIG. 26 shows a third structural example of the organic EL panel 200 for enhancing the resistance reduction effect of the upper electrode 108 (second electrode) of the organic EL element 100 by the auxiliary electrode 109 formed by the thin film pattern forming method according to the present invention. 27 (a) is a cross-sectional view taken along the line AB of the main part shown in FIG. 26, and FIG. 27 (b) is a cross-sectional view taken along the line CD shown in FIG. Indicates.

  In this example, the second electrode (upper electrode) 108 in the display area of the organic EL panel 200 is divided, and the divided second electrode 109 is made of an auxiliary electrode 109 made of a material having a lower electrical resistance than the second electrode. The electrodes (upper electrodes) 108 are electrically connected. The second electrode 108 is divided so that the extending direction of the pattern side wall of the electrode and the extending direction of the auxiliary electrode 109 are substantially parallel.

  In the case of the present embodiment, the effect of reducing the contact resistance of the upper electrode 108 by the auxiliary electrode 109 is enhanced by bringing the auxiliary electrode 109 into contact with the divided pattern side wall of the upper electrode 108. Also in this case, the electric field concentration between the pattern side wall of the upper electrode 108 and the auxiliary electrode 109 is the reason for reducing the contact resistance. The dividing direction of the second electrode 108 is different from that in the seventh embodiment.

  FIG. 28 shows an example in which the method for forming a thin film pattern according to the present invention is applied to wire breakage repair of a wiring board. FIG. 28B is a cross-sectional view taken along the line AB in FIG. Reference numeral 281 denotes a wiring board on which electronic components such as a semiconductor chip and a capacitor are mounted, and 282 denotes a wiring pattern provided on the wiring board 281. The wiring pattern 282 has a disconnection point 284. The disconnection point 284 is repaired by the repair wiring 283, and the disconnection of the wiring pattern 281 is eliminated.

  The method for forming a thin film pattern according to the present invention, in which a thin film piece is attached to an organic EL substrate by irradiating a laser, can also be applied as a method for forming such repair wiring. Thereby, the yield of the wiring board 281 can be increased, which can contribute to a reduction in manufacturing cost.

It is a top view of a top emission type organic EL display device. It is sectional drawing of a top emission type organic electroluminescence display. 2 is a first process flow according to the first embodiment. 2 is a second process flow of the first embodiment. 4 is a third process flow of the first embodiment. It is a 1st aspect of the cross section of a lower electrode. It is a 2nd aspect of the cross section of a lower electrode. It is sectional drawing which shows the example which formed the auxiliary electrode below the upper electrode. It is the 1st sealing structure of an organic electroluminescent panel. It is the 2nd sealing structure of an organic electroluminescent panel. It is the 3rd sealing structure of an organic electroluminescent panel. 6 is a first process flow according to the second embodiment. 10 is a second process flow according to the second embodiment. 10 is a first process flow of Example 3. 10 is a second process flow according to the third embodiment. 12 is a third process flow of the third embodiment. 10 is a first process flow of the fourth embodiment. 10 is a second process flow according to the fourth embodiment. 10 is a third process flow of the fourth embodiment. It is a top view which shows the 1st form of Example 5. FIG. It is sectional drawing of FIG. It is a top view which shows the 2nd form of Example 5. FIG. It is sectional drawing of FIG. 10 is a plan view showing Example 6. FIG. It is sectional drawing of FIG. 10 is a plan view showing Example 7. FIG. It is sectional drawing of FIG. 10 is a schematic diagram showing Example 8. FIG.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... Process chamber, 11 ... Transparent support substrate, 12 ... Conductive thin film layer, 13 ... Thin film piece, 14 ... Base thin film layer, 15 ... Base foil, support substrate, 100 ... Organic EL substrate, 101 ... Drive circuit board, 102 ... planarization layer, 103 ... lower electrode, 104 ... bank, 105, 106R, 106G, 106B, 107 ... organic EL film, 108 ... upper electrode, 109 ... auxiliary electrode, 110 ... organic EL element forming part, 111 ... internal wiring 112 ... Through hole, 113 ... Sealing glass, 114 ... Resin sheet, 115 ... Thin film sealing layer, 121 ... Patterned first thin film layer, 140 ... Second thin film layer, 141 ... Patterned Second thin film layer, 170 ... evaporated particles by ablation, 191 ... easy to evaporate thin film layer, 200 ... organic EL panel, 281 ... wiring board, 282 ... Line patterns, 283 ... repair wire, 284 ... disconnection unit, 281 ... wiring board, 281 ... wiring board, 281 ... wiring board, 300 ... donor substrate, 1080 ... third electrode, 1200,1400,1700 ... donor substrate.

Claims (10)

An organic EL panel having an organic EL substrate in which an organic EL layer including a light emitting layer is formed between a lower electrode and an upper electrode, and an auxiliary electrode for reducing a voltage drop in the upper electrode is formed on the upper electrode A manufacturing method of
In the auxiliary electrode forming chamber, the organic EL substrate provided with the organic EL element on the drive circuit substrate and the donor substrate formed with the first thin film layer including the conductive thin film are in contact with the organic EL substrate and the donor substrate. Do not arrange with a predetermined gap,
Evacuating the auxiliary electrode forming chamber to a pressure of 100 Pa or less,
A surface of the donor substrate opposite to the surface on which the first thin film is formed is irradiated with laser light to generate a shock wave on the surface of the donor substrate, and the shock wave generates the first thin film layer from the donor substrate. Peeling off, transferring the peeled thin film piece onto the organic EL substrate arranged to face the donor substrate, and forming the auxiliary electrode at a predetermined location of the organic EL substrate Manufacturing method of display panel. 2. The organic EL display panel according to claim 1, wherein the donor substrate comprises a support substrate that transmits the laser light and a second thin film layer that absorbs the laser light formed on the support substrate. Manufacturing method. 3. The method of manufacturing an organic EL display panel according to claim 2, wherein the second thin film layer is a thin film pattern having a predetermined pattern shape. 4. The organic EL display according to claim 2, wherein an antireflection film for the second thin film layer is formed between the support substrate constituting the donor substrate and the second thin film layer. Panel manufacturing method. 5. The organic EL according to claim 4, wherein the antireflection film includes at least a thin film layer made of any material of silicon oxide, silicon nitride, silicon oxynitride, titanium oxide, and aluminum oxide. Manufacturing method of display panel. 4. The method of manufacturing an organic EL display panel according to claim 2, wherein the second thin film layer is roughened on a side of the support substrate. The second thin film layer includes a thin film layer made of any material of Al, Cu, Au, Ag, W, Ta, Ti, Ni, Cr, Mo, Fe or an alloy containing these. Item 6. A method for producing an organic EL display panel according to Item 2. 2. The organic EL display panel according to claim 1, wherein the donor substrate is a foil-like member, and the foil-like member is a member mainly composed of Ni or a member made of an Fe—Ni alloy. Method. 9. The method of manufacturing an organic EL display panel according to claim 8, wherein the thickness of the foil-shaped member is 10 μm or more and 50 μm or less. In the connected series of equipment, the auxiliary electrode is formed by forming the first thin film layer on the donor substrate, and then transferring the thin film piece made of the first thin film layer peeled from the donor substrate. 10. The method for manufacturing an organic EL display panel according to claim 1, wherein the organic EL display panel is formed.

Images