JP5041830B2 - Automobile - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a power receiving device and portable electronic equipment equipped with it, in which charging from power feeding equipment which is a power feeding means is simplified when a battery is charged with no failure of an external terminal caused when the battery is directly connected to the power feeding equipment being an external factor, nor a possibility of the breakage of the external terminal itself. <P>SOLUTION: The portable electronic equipment is provided with an antenna circuit for supplying power and a booster antenna. The antenna circuit receives radio signals such as electromagnetic waves through the booster antenna. The electric power which is obtained by receiving the radio signals is supplied for charging to a battery through a signal processing circuit. <P>COPYRIGHT: (C)2008,JPO&amp;INPIT

Description

The present invention relates to a power receiving apparatus. In particular, the present invention relates to a power receiving device that receives power via radio waves. Furthermore, the present invention relates to a power receiving apparatus including an antenna for receiving power via radio waves, and a power supply system using a power feeder including an antenna for supplying power to the power receiving apparatus by radio waves.

Note that the power receiving device in this specification refers to all devices that are supplied with power by a radio signal from a power supply device installed outside.

Various electric appliances are spreading and a wide variety of products are shipped to the market. Particularly in recent years, the spread of portable electronic devices has been remarkable. As an example, cellular phones, digital video cameras, and the like have become more convenient because of higher display definition, improved battery durability, and lower power consumption. As a power source for driving the portable electronic device, a battery which is a charging means is incorporated. A secondary battery (hereinafter referred to as a battery) such as a lithium ion battery is used as a battery, and charging of the battery is performed by an AC adapter in which an outlet is inserted into a household AC power source as a power supply means. It is the present condition (refer patent document 1).

Note that the electronic device including the battery includes a bicycle, an automobile (including a moving means driven by electric power regardless of whether it is an electric vehicle, a four-wheeled vehicle, or a two-wheeled vehicle). Therefore, in this specification, portable electronic devices and moving means having a battery are collectively referred to as mobile electronic devices (mobile devices).
JP-A-2005-150022

However, the frequency of use of mobile electronic devices such as mobile phones and digital video cameras is steadily increasing, and there is a limit to the improvement of battery durability and low power consumption to cope with the usage time. Furthermore, for charging a battery, which is a power source built in a mobile phone, a digital video camera, etc., in addition to charging from a charger using an AC adapter via a home AC power source or charging from a commercially available primary battery There was no. Therefore, the charging operation is complicated for the user, and there is a problem that it is necessary to move outdoors with the AC adapter or the primary battery as a power supply means, which is a burden.

In addition, in an automobile that is a mobile electronic device, a battery is charged by a combustion engine, but in order to start the combustion engine, plug ignition by electric power charged in the battery is required. Therefore, when the battery runs out due to not using the car for a certain period of time, the plug cannot be ignited, and in order to start the combustion engine, it is necessary to supply power directly from the outside by wire. There was a problem in terms of safety and convenience.

Furthermore, in charging with an AC adapter from a household AC power source or charging from a commercially available primary battery, it is necessary to provide an external terminal as a conductive portion to the battery in the mobile electronic device. For this reason, the external terminal is exposed or the external terminal is exposed via the protection unit. For this reason, there has been a problem that a failure occurs due to the damage of the external terminal or the defect of the external terminal.

Accordingly, the present invention provides a mobile electronic device that can be easily charged from a power feeder that is a power supply means for a battery that is a charging means, and that is caused by an external factor of an external terminal for directly connecting the battery and the power supply means. Another object is to provide a power receiving device in which there is no possibility of damage to the external terminal itself and an electronic device including the power receiving device.

In order to solve the above-described problems, the present invention is characterized by providing an antenna circuit for supplying power to a mobile electronic device. The present invention is characterized in that power is supplied to the antenna circuit by a radio signal such as an electromagnetic wave, and the radio signal is supplied and charged as power to the battery via the signal processing circuit. Hereinafter, a specific configuration of the present invention will be described.

One aspect of the present invention includes an antenna circuit, a booster antenna, a signal processing circuit, and a battery. The antenna circuit receives a radio signal through the booster antenna, and the radio signal includes a signal processing circuit. And the battery is charged.

Another aspect of the present invention includes an antenna circuit, a booster antenna, a signal processing circuit, and a battery. The antenna circuit receives a radio signal supplied from a power feeder via the booster antenna. The wireless signal is received and input to the battery via the signal processing circuit, and the battery is charged.

The battery according to the present invention may supply power to a power supply circuit included in the signal processing circuit.

The antenna circuit in the present invention may receive a radio signal by an electromagnetic induction method.

The battery in the present invention is a lithium battery, a lithium polymer battery, a lithium ion battery, a nickel metal hydride battery, a nickel cadmium battery, an organic radical battery, a lead storage battery, an air secondary battery, a nickel zinc battery, a silver zinc battery, or a capacitor. Also good.

Moreover, the present invention may be an electronic device including a power receiving device.

The electronic device in the present invention may be any of a mobile phone, a notebook computer, a digital camera, a portable image playback device, a digital video camera, a portable information terminal, a television receiver, a car, or a bicycle.

The power receiving device of the present invention includes an antenna circuit. Therefore, there is no need to provide an external terminal as a conductive part to the battery in the mobile electronic device, and power can be supplied to the battery by a wireless signal without causing damage to the external terminal or failure due to the failure of the external terminal. it can. In addition, a mobile electronic device having a battery as a charging device can be always charged without carrying a charger or a primary battery for charging by a power supply means for supplying power by a wireless signal. It becomes possible to do.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention can be implemented in many different modes, and those skilled in the art can easily understand that the modes and details can be variously changed without departing from the spirit and scope of the present invention. Is done. Therefore, the present invention is not construed as being limited to the description of this embodiment mode. Note that in the structures of the present invention described below, the same reference numeral is used in different drawings.
(Embodiment 1)

A structure of a mobile electronic device including the power receiving device of the present invention will be described with reference to block diagrams shown in FIGS.

The mobile electronic device 100 of FIG. 1 includes a power receiving device unit 101 and a power load unit 105. The power receiving device unit 101 includes an antenna circuit 102, a signal processing circuit 103, and a battery 104. The signal processing circuit 103 includes a rectifier circuit 106 and a power supply circuit 108.

Note that the power supply circuit 108 in FIG. 1 supplies power to the power load unit 105, but since the configuration of the power load unit 105 differs for each mobile electronic device, in this embodiment, in the mobile phone or the digital video camera. A description will be given assuming the configuration. Therefore, the power supply circuit 108 supplies power to the display unit 109 and the integrated circuit unit 110. Note that the integrated circuit unit 110 is a circuit unit that processes signals other than the display unit, and has a different configuration for each mobile electronic device, and thus detailed description thereof is omitted in this specification. The display unit 109 includes a pixel unit 111 and a display control unit 112 for controlling the pixel unit 111. The display control unit 112 is electrically connected to the signal processing circuit 103. Needless to say, an electroluminescent element, a liquid crystal element, or the like may be used as the display element provided in the pixel in the display portion 109, and the display element is appropriately selected depending on the use of the mobile electronic device.

FIG. 2 shows a block diagram in which the antenna circuit 102 receives a signal from the power feeder 201. In FIG. 2, power received by the antenna circuit 102 is input to the battery 104 via the rectifier circuit 106, and power is appropriately supplied from the battery 104 to the power supply circuit 108.

Note that there is no particular limitation on the shape of the antenna in the antenna circuit 102. For example, a structure in which one antenna circuit 102 is arranged around the signal processing circuit 103 as shown in FIG. Further, as shown in FIG. 3B, a structure in which the signal processing circuit 103 is arranged so as to be superimposed on the annular antenna circuit 102 may be employed. Further, as shown in FIG. 3C, the signal processing circuit 103 may be provided and the antenna circuit 102 for receiving high-frequency electromagnetic waves may be used. In addition, as shown in FIG. 3D, the signal processing circuit 103 may be provided, and the antenna circuit 102 may be configured to be 180 degrees non-directional (same reception from any direction). Further, as shown in FIG. 3E, the signal processing circuit 103 may be provided, and the antenna circuit 102 may have a shape in which the signal processing circuit 103 is elongated and bent back. Further, although not shown, a patch antenna may be used. Further, the antenna connection in the signal processing circuit 103 and the antenna circuit 102 is not particularly limited to the illustrated configuration. For example, the antenna circuit 102 and the signal processing circuit 103 may be arranged apart from each other and connected by wiring, or may be connected in proximity. In this embodiment, the shape of the antenna circuit 102 is described assuming that the shape of FIG. 3B is adopted, electromagnetic waves are received by the antenna circuit, and electric power is obtained by electromagnetic induction. The antenna circuit 102 is described as including an antenna 401 and a resonant capacitor 402 as shown in FIG. 4A, and the antenna 401 and the resonant capacitor 402 are collectively referred to as an antenna circuit 403.

The rectifier circuit 106 may be a circuit that converts an alternating current signal induced by electromagnetic waves received by the antenna circuit 102 into a direct current signal. For example, as shown in FIG. 4B, a rectifier circuit 407 may be configured by a diode 404, a diode 405, and a smoothing capacitor 406.

The power feeder 201 in FIG. 2 will be described with reference to FIG. A power feeder 600 in FIG. 5 includes a power transmission control unit 601 and an antenna circuit 602. The power transmission control unit 601 modulates an electric signal for power transmission to be transmitted to the power receiving device unit 101 in the mobile electronic device, and outputs an electromagnetic wave for power transmission from the antenna circuit 602.

In the present embodiment, the antenna circuit 602 of the power feeder 600 shown in FIG. 5 is connected to the power transmission control unit 601 and the antenna 603 constituting the LC parallel resonance circuit and the resonance, similarly to the antenna circuit 102 in the power receiving device unit 101. It has a capacity 604. The power transmission control unit 601 causes a current to flow through the antenna circuit 602 during power transmission, and outputs an electromagnetic wave for power transmission from the antenna 603 to the power receiving device unit 101.

Note that, as described above, in this embodiment, the radio signal received by the antenna circuit 102 circuit is communicated by an electromagnetic induction method in accordance with the shape of the antenna in the antenna circuit. Therefore, the power receiving device portion 101 in FIGS. 1 and 2 has a configuration including a coiled antenna circuit 102. For example, FIG. 6 illustrates a positional relationship of antenna circuits and a shape of an antenna in a mobile electronic device having a power receiving device portion. FIG. 6 illustrates a configuration in which the antenna circuit in the power receiving device unit receives electromagnetic waves for power transmission from the antenna of the power feeder.

In FIG. 6, when the coiled antenna 705 connected to the power supply antenna circuit 704 connected to the power transmission control unit 703 and the antenna circuit 702 of the power receiving device unit 700 are brought close to each other, the coiled antenna circuit 704 in the power supply unit 700 is moved. An AC magnetic field is generated from the antenna 705. The AC magnetic field passes through the antenna circuit 702 in the power receiving device unit 700, and an electromotive force is generated between terminals of the antenna circuit 702 in the power receiving device unit 700 (between one end and the other end of the antenna) by electromagnetic induction. The battery in the power receiving device portion 700 can be charged by the electromotive force. Note that as illustrated in FIG. 7, the antenna circuit 702 in the power receiving device unit 700 performs charging from the power feeder even when it exists in a superimposed manner or when there are a plurality of antenna circuits in the AC magnetic field. Can do.

The frequency of the signal transmitted from the power feeder 201 to the antenna circuit 102 is, for example, 300 mm to 3 THz as a submillimeter wave, 30 GHz to 300 GHz as a millimeter wave, 3 GHz to 30 GHz as a microwave, and 300 MHz to 3 GHz as a very high frequency wave. Any frequency of 30 MHz to 300 MHz which is an ultrashort wave, 3 MHz to 30 MHz which is a short wave, 300 KHz to 3 MHz which is a medium wave, 30 KHz to 300 KHz which is a long wave, and 3 KHz to 30 KHz which is an ultralong wave can be used.

An example of the power supply circuit in FIGS. 1 and 2 will be described with reference to FIG. The power supply circuit includes a reference voltage circuit and a buffer amplifier. The reference voltage circuit includes a resistor 1001, it is constituted by transistors 1002 and 1003 of diode-connected, to generate a total corresponding to the reference voltage _{V GS} of _{V GS} (voltage between the gate and source) and the transistor 1003 of the transistor 1002. The buffer amplifier includes a differential circuit configured by transistors 1005 and 1006, a current mirror circuit configured by transistors 1007 and 1008, a current supply resistor 1004, a transistor 1009, and a source-grounded amplifier configured by resistor 1010.

  In the power supply circuit shown in FIG. 8, when the current flowing from the output terminal is large, the current flowing through the transistor 1009 decreases, and when the current flowing from the output terminal is small, the current flowing through the transistor 1009 increases and flows through the resistor 1010. The current operates so as to be almost constant. Further, the potential of the output terminal is almost the same value as that of the reference voltage circuit. Although the power supply circuit having the reference voltage circuit and the buffer amplifier is shown here, the power supply circuit used in the present invention is not limited to FIG. 8 and may be another type of power supply circuit.

Note that in this specification, a battery refers to a battery whose continuous use time can be recovered by charging. In addition, although it changes with the uses as a battery, it is preferable to use the battery formed in the sheet form, for example, it is small by using a lithium polymer battery, preferably a lithium polymer battery using a gel electrolyte, a lithium ion battery, etc. Is possible. Of course, any rechargeable battery may be used, such as a nickel metal hydride battery, a nickel cadmium battery, an organic radical battery, a lead storage battery, an air secondary battery, a nickel zinc battery, or a silver zinc battery. In addition, a large-capacity capacitor may be used.

  Next, the operation when charging the mobile electronic device 100 shown in FIG. 1 and FIG. The radio signal received by the antenna circuit is half-wave rectified and smoothed by the rectifier circuit 106. The voltage that has been half-wave rectified and smoothed by the rectifier circuit 106 is temporarily held in the battery 104. The power held in the battery 104 is used as power supplied to the power supply circuit 108.

Note that in this embodiment mode, the power stored in the battery is not limited to the wireless signal output from the power feeder 201, and a power generation element may be additionally provided in a part of the mobile electronic device. FIG. 29 shows a structure provided with a power generation element. 29 differs from FIG. 1 in that a power generation element 851 for supplying power to the battery is provided. The structure provided with the power generation element 851 is preferable because the supply amount of power stored in the battery 104 can be increased and the charging speed can be increased. Note that the power generation element 851 in FIG. 29 may be, for example, a power generation element using a solar cell, a power generation element using a piezoelectric element, or a micro structure (MEMS: Micro Electro Mechanical System). ) May be used. Of course, instead of the supply of electric power from the power generation element, the supply of electric power from a generator by the power of a combustion engine such as an automobile engine may be used. Providing both the power receiving antenna and the generator is preferable because the supply amount of power stored in the battery can be increased and the charging speed can be increased. Further, it is noted that the configuration of the power generation element in FIG. 29 is not limited to the above-described configuration.

Next, the power supplied from the battery 104 to the power supply circuit 108 is supplied to the pixel unit 111, the display control unit 112, and the integrated circuit unit 110 of the display unit 109 in the power load unit 105 in the configuration illustrated in FIGS. . Then, the mobile electronic device can be operated.

As described above, the power receiving device of the present invention includes an antenna circuit. Therefore, there is no need to provide an external terminal as a conductive part to the battery in the mobile electronic device, and power can be supplied to the battery by a wireless signal without causing damage to the external terminal or failure due to the failure of the external terminal. it can. In addition, for mobile electronic devices having a battery that is a charging device, if the power receiving means for supplying power supplies power wirelessly and the wireless reception status is good, the charger or the primary battery for charging It becomes possible to always charge without carrying.

Note that this embodiment can be implemented in combination with any of the other embodiments in this specification.
(Embodiment 2)

  In this embodiment, a structure including a booster antenna circuit (hereinafter referred to as a booster antenna) in the structure of the mobile electronic device including the power receiving device described in Embodiment 1 is described with reference to drawings. Note that in the drawings used in this embodiment, the same portions as those in Embodiment 1 are denoted by the same reference numerals.

Note that the booster antenna described in this embodiment refers to an antenna having a size larger than that of an antenna that receives a signal from a power feeder provided in the power receiving device. The booster antenna resonates the signal from the power supply in the frequency band to be used, and magnetically couples the antenna circuit provided in the power receiving device and the booster antenna, so that the signal supplied from the power supply can be efficiently It can be transmitted to the target power receiving device. Since the booster antenna is coupled to the antenna circuit through a magnetic field, it is not necessary to directly connect the antenna circuit and the signal processing circuit, which is preferable.

A structure of a mobile electronic device including the power receiving device in this embodiment will be described with reference to block diagrams shown in FIGS.

The mobile electronic device 100 of FIG. 9 includes a power receiving device unit 101 and a power load unit 105. The power receiving device portion includes an antenna circuit 102A, a booster antenna 102B, a signal processing circuit 103, and a battery 104. The signal processing circuit 103 includes a rectifier circuit 106 and a power supply circuit 108.

Note that the power supply circuit 108 in FIG. 9 supplies power to the power load unit 105, but since the configuration of the power load unit 105 differs for each mobile electronic device, in this embodiment, an automobile (including a motorcycle and the like) is included. ) Will be described. Therefore, the power supply circuit 108 supplies power to the drive unit 909 and the peripheral power unit 910. Note that the peripheral power unit 910 is a circuit unit that processes signals other than the drive unit, and has a different configuration for each automobile that is a mobile electronic device, and therefore detailed description thereof is omitted in this specification. The drive unit 909 includes a combustion engine unit 911 and a drive control unit 912 for controlling the combustion engine unit 911. The combustion engine unit 911 includes a spark plug for starting. This spark plug is electrically connected to the signal processing circuit 103.

FIG. 10 illustrates a block diagram in which the antenna circuit 102 </ b> A receives a radio signal from the power feeder 201. In FIG. 10, the electric power received by the antenna circuit 102 </ b> A is transmitted to the battery 104 via the rectifier circuit 106 due to magnetic field coupling with the antenna circuit 102 </ b> A when the booster antenna 102 </ b> B receives the radio signal from the power feeder and causes electromagnetic induction. The power is input from the battery 104 to the power supply circuit 108 as appropriate. The configuration of FIG. 10 is preferable because the distance of power transmission by a wireless signal between the power feeder 201 and the power receiving device unit 101 can be increased.

Note that there is no particular limitation on the shape of the antenna in the antenna circuit 102A and the booster antenna 102B. For example, the antenna having the shape shown in FIG. 3 described in Embodiment 1 can be employed. However, the booster antenna preferably employs an antenna having a shape larger than that of the antenna circuit to be magnetically coupled because of its function. Further, the antenna circuit 102A and the booster antenna 102B are described as including the antenna 401 and the resonance capacitor 402 as illustrated in FIG. 4A described in Embodiment 1, and the antenna 401 and the resonance capacitor 402 are combined. The antenna circuit 403 is assumed.

The rectifier circuit 106 in FIGS. 9 and 10 is similar to that shown in Embodiment Mode 1. As shown in FIG. 4B, the rectifier circuit 407 is formed by a diode 404, a diode 405, and a smoothing capacitor 406. What is necessary is just to comprise.

Note that the power feeder 201 in FIGS. 9 and 10 is similar to that shown in Embodiment Mode 1, and may have the configuration shown in FIG.

In this embodiment mode, radio signals to be received by the antenna circuit 102A and the booster antenna 102B are communicated by an electromagnetic induction method. Therefore, the power receiving device portion 101 in FIGS. 9 and 10 includes a coiled antenna circuit 102A and a booster antenna 102B. For example, FIG. 11 illustrates a positional relationship between a power receiving device having an antenna circuit and a booster antenna and a power feeder, and a shape of the antenna. FIG. 11 illustrates a configuration in which a booster antenna in a power receiving unit receives a radio signal from a power feeder, and an antenna circuit receives an electromagnetic wave due to magnetic field coupling from the booster antenna.

In FIG. 11, when the coiled antenna 705 connected to the power supply antenna circuit 704 connected to the power transmission control unit 703 and the booster antenna 1602 of the power receiving device unit 1600 are brought close to each other, the coiled antenna circuit 704 in the power supply unit 1600 An AC magnetic field is generated from the antenna 705. An AC magnetic field penetrates the coiled booster antenna 1602 in the power receiving device 1600, and an electromotive force is generated between terminals of the coiled booster antenna 1602 in the power receiving device 1600 (between one end and the other end of the antenna) by electromagnetic induction. appear. In the coiled booster antenna 1602, an electromotive force is generated by electromagnetic induction, and an alternating magnetic field is generated from the coiled booster coil itself. Then, an alternating magnetic field generated from the booster antenna 1602 passes through the coiled antenna 1601 connected to the antenna circuit 1603 in the power receiving device portion 1600, and between the terminals of the coiled antenna 1601 in the power receiving device portion 1600 by electromagnetic induction ( An electromotive force is generated between one end and the other end of the antenna. The battery in the power receiving device portion 1600 can be charged by the electromotive force.

9 and FIG. 10 performs charging from the charger even when the power receiving device portion is superimposed as shown in FIG. 7 in the first embodiment. Can do.

Note that the frequency of the signal supplied from the power feeder 201 to the antenna circuit 102 is the same as that in Embodiment 1, and thus is omitted here.

  The power supply circuit 108 in FIGS. 9 and 10 is the same as the example shown in FIG.

  Next, the operation when charging the battery 104 of the mobile electronic device 100 shown in FIGS. 9 and 10 with the wireless signal from the power feeder 201 will be described below. The signal received by the antenna circuit 102 is half-wave rectified and smoothed by the rectifier circuit 106. The voltage that has been half-wave rectified and smoothed by the rectifier circuit 106 is temporarily held in the battery 104. The power held in the battery 104 is used as power supplied to the power supply circuit 108.

Note that in this embodiment, the power stored in the battery is not limited to the signal output from the power feeder 201, and may be configured to be supplemented by providing a power generation element in a part of the mobile electronic device. FIG. 12 shows a structure provided with a power generation element. The configuration in FIG. 12 is different from that in FIG. 9 in that a power generation element 851 for supplying power to the battery 104 is provided. The structure provided with the power generation element 851 is preferable because the supply amount of power stored in the battery 104 can be increased and the charging speed can be increased.

Note that the power generation element 851 in FIG. 12 may be a power generation element using a solar cell, a power generation element using a piezoelectric element, or a micro structure (MEMS: Micro Electro Mechanical System). ) May be used. Of course, instead of the electrode supply from the power generation element, the power supply from the generator by the power of the combustion engine such as an automobile engine may be used. Providing both the power receiving antenna and the generator is preferable because the supply amount of power stored in the battery can be increased and the charging speed can be increased. Further, it is noted that the configuration of the power generation element in FIG. 12 is not limited to the above-described configuration.

Next, the power supplied from the battery 104 to the power circuit 108 is supplied to the combustion engine unit 911, the drive control unit 912, and the peripheral power unit 910 of the drive unit 909 in the power load unit 105 in the configuration shown in FIGS. The The combustion engine unit 911 includes a spark plug. This spark plug is electrically connected to the power supply circuit 108. The combustion engine is started by ignition of the spark plug by the electric power charged in the battery 104.

As described above, the power receiving device of the present invention includes an antenna circuit. Therefore, there is no need to provide an external terminal as a conductive part to the battery in the mobile electronic device, and power can be supplied to the battery by a wireless signal without causing damage to the external terminal or failure due to the failure of the external terminal. it can.

In addition, the configuration of the present embodiment is characterized by having a booster antenna in addition to the configuration of the first embodiment. Therefore, there is an advantage that power can be more reliably supplied from the power feeder to the power receiving device.

In the structure of this embodiment mode, when a battery such as an automobile as a power receiving device is charged, power can be supplied wirelessly, so that the batteries are not connected by wire. Therefore, safety and convenience can be improved for charging a battery of an automobile or the like that is a power receiving device.

  Note that this embodiment can be implemented in combination with any of the other embodiments in this specification.

(Embodiment 3)
In this embodiment, an example of a method for manufacturing the power receiving device portion described in the above embodiment will be described with reference to drawings. In this embodiment, a mobile phone or a digital video camera is assumed as the mobile electronic device described in Embodiment 1, and a structure in which an antenna circuit, a signal processing circuit, and a battery are provided over the same substrate will be described. Note that it is preferable that an antenna circuit, a signal processing circuit, and a battery be formed over the substrate at once, and the transistor included in the signal processing circuit be a thin film transistor because the size can be reduced.

  In the present embodiment, the antenna circuit described in Embodiments 1 and 2 will be simply referred to as an antenna because only the shape and the mounting position thereof will be described.

  First, a separation layer 1303 is formed over one surface of a substrate 1301 with an insulating film 1302 interposed therebetween, and then an insulating film 1304 functioning as a base film and a semiconductor film 1305 (for example, a film containing amorphous silicon) are stacked. It is formed (see FIG. 13A). Note that the insulating film 1302, the separation layer 1303, the insulating film 1304, and the amorphous semiconductor film 1305 can be formed successively.

  The substrate 1301 is selected from a glass substrate, a quartz substrate, a metal substrate (for example, a stainless steel substrate), a ceramic substrate, a semiconductor substrate such as a Si substrate, and the like. In addition, a substrate such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), or acrylic can be selected as the plastic substrate. Note that in this step, the separation layer 1303 is provided over the entire surface of the substrate 1301 with the insulating film 1302 interposed therebetween. However, if necessary, after the separation layer is provided over the entire surface of the substrate 1301, the separation layer 1303 can be selectively formed by a photolithography method. May be provided.

  The insulating films 1302 and 1304 are formed using silicon oxide, silicon nitride, silicon oxynitride (SiOxNy) (x> y> 0), silicon nitride oxide (SiNxOy) (x> y>) by a CVD method, a sputtering method, or the like. 0) or the like. For example, in the case where the insulating films 1302 and 1304 have a two-layer structure, a silicon nitride oxide film may be formed as the first insulating film and a silicon oxynitride film may be formed as the second insulating film. Alternatively, a silicon nitride film may be formed as the first insulating film, and a silicon oxide film may be formed as the second insulating film. The insulating film 1302 functions as a blocking layer that prevents an impurity element from being mixed into the separation layer 1303 or an element formed thereon from the substrate 1301, and the insulating film 1304 is formed over the substrate 1301 and the separation layer 1303. It functions as a blocking layer that prevents an impurity element from entering the device. In this manner, by forming the insulating films 1302 and 1304 functioning as blocking layers, an alkali metal such as Na or alkaline earth metal from the substrate 1301 and an impurity element contained in the release layer from the release layer 1303 are formed thereon. It is possible to prevent an adverse effect on an element to be formed. Note that the insulating films 1302 and 1304 may be omitted when quartz is used for the substrate 1301.

For the separation layer 1303, a metal film, a stacked structure of a metal film and a metal oxide film, or the like can be used. As the metal film, tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), nickel (Ni), cobalt (Co), zirconium (Zr), zinc (Zn), An element selected from ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), or a film made of an alloy material or compound material containing the element as a main component, or a single layer. Form. These materials can be formed by using various CVD methods such as a sputtering method and a plasma CVD method. A stacked structure of a metal film and a metal oxide film, after forming a metal film described above, the plasma treatment in or under N _{2 O} atmosphere an oxygen atmosphere, by performing heat treatment in or under N _{2 O} atmosphere an oxygen atmosphere The oxide or oxynitride of the metal film can be provided on the surface of the metal film. For example, in the case where a tungsten film is provided as a metal film by a sputtering method, a CVD method, or the like, a metal oxide film made of tungsten oxide can be formed on the tungsten film surface by performing plasma treatment on the tungsten film. In this case, the oxide of tungsten is represented by WOx, X is 2 to 3, X is 2 (WO ₂ ), X is 2.5 (W ₂ O ₅ ), and X is In the case of 2.75 (W ₄ O ₁₁ ), X is 3 (WO ₃ ), and the like. In forming the tungsten oxide, there is no particular limitation on the value of X mentioned above, and it is preferable to determine which oxide is formed based on the etching rate or the like. In addition, for example, after a metal film (for example, tungsten) is formed, an insulating film such as silicon oxide (SiO ₂ ) is provided on the metal film by a sputtering method, and a metal oxide (for example, for example, Tungsten oxide) may be formed over tungsten. Further, as the plasma treatment, for example, the above-described high-density plasma treatment may be performed. In addition to the metal oxide film, metal nitride or metal oxynitride may be used. In this case, plasma treatment or heat treatment may be performed on the metal film in a nitrogen atmosphere or a nitrogen and oxygen atmosphere.

  The amorphous semiconductor film 1305 is formed with a thickness of 25 to 200 nm (preferably 30 to 150 nm) by a sputtering method, an LPCVD method, a plasma CVD method, or the like.

  Next, crystallization is performed by irradiating the amorphous semiconductor film 1305 with laser light. Note that the amorphous semiconductor film 1305 is crystallized by a combination of laser light irradiation, a thermal crystallization method using an RTA or a furnace annealing furnace, a thermal crystallization method using a metal element that promotes crystallization, or the like. You may go. After that, the obtained crystalline semiconductor film is etched into a desired shape to form crystalline semiconductor films 1305a to 1305f, and a gate insulating film 1306 is formed so as to cover the semiconductor films 1305a to 1305f (FIG. 13 ( B)).

  The gate insulating film 1306 is formed using silicon oxide, silicon nitride, silicon oxynitride (SiOxNy) (x> y> 0), silicon nitride oxide (SiNxOy) (x> y> 0), or the like using a CVD method, a sputtering method, or the like. The insulating material is used. For example, in the case where the gate insulating film 1306 has a two-layer structure, a silicon oxynitride film may be formed as the first insulating film and a silicon nitride oxide film may be formed as the second insulating film. Alternatively, a silicon oxide film may be formed as the first insulating film, and a silicon nitride film may be formed as the second insulating film.

  An example of a manufacturing process of the crystalline semiconductor films 1305a to 1305f will be briefly described below. First, an amorphous semiconductor film with a thickness of 50 to 60 nm is formed using a plasma CVD method. Next, after a solution containing nickel, which is a metal element that promotes crystallization, is held on the amorphous semiconductor film, the amorphous semiconductor film is subjected to dehydrogenation treatment (500 ° C., 1 hour), heat Crystallization treatment (550 ° C., 4 hours) is performed to form a crystalline semiconductor film. After that, laser light is irradiated and crystalline semiconductor films 1305a to 1305f are formed by using a photolithography method. Note that the amorphous semiconductor film may be crystallized only by laser light irradiation without performing thermal crystallization using a metal element that promotes crystallization.

As a laser oscillator used for crystallization, a continuous wave laser beam (CW laser beam) or a pulsed laser beam (pulse laser beam) can be used. The laser beam that can be used here is a gas laser such as Ar laser, Kr laser, or excimer laser, single crystal YAG, YVO ₄ , forsterite (Mg ₂ SiO ₄ ), YAlO ₃ , GdVO ₄ , or polycrystalline ( (Ceramics) YAG, Y ₂ O ₃ , YVO ₄ , YAlO ₃ , GdVO ₄ with one or more of Nd, Yb, Cr, Ti, Ho, Er, Tm, Ta added as dopants Lasers oscillated from one or more of laser, glass laser, ruby laser, alexandrite laser, Ti: sapphire laser, copper vapor laser or gold vapor laser as a medium can be used. By irradiating the fundamental wave of such a laser beam and the second to fourth harmonics of these fundamental waves, a crystal having a large grain size can be obtained. For example, the second harmonic (532 nm) or the third harmonic (355 nm) of an Nd: YVO ₄ laser (fundamental wave 1064 nm) can be used. In this case, a laser power density is about 0.01 to 100 MW / cm ² (preferably 0.1 to 10 MW / cm ²⁾ is required. Then, irradiation is performed at a scanning speed of about 10 to 2000 cm / sec. Note that single crystal YAG, YVO ₄ , forsterite (Mg ₂ SiO ₄ ), YAlO ₃ , GdVO ₄ , or polycrystalline (ceramic) YAG, Y ₂ O ₃ , YVO ₄ , YAlO ₃ , GdVO ₄ , dopants Nd, Yb, Cr, Ti, Ho, Er, Tm, Ta as a medium, a laser, Ar ion laser, or Ti: sapphire laser with one or more added as a medium should be continuously oscillated It is also possible to perform pulse oscillation at an oscillation frequency of 10 MHz or more by performing Q switch operation, mode synchronization, or the like. When a laser beam is oscillated at an oscillation frequency of 10 MHz or higher, the semiconductor film is irradiated with the next pulse during the period from when the semiconductor film is melted by the laser to solidification. Therefore, unlike the case of using a pulse laser having a low oscillation frequency, the solid-liquid interface can be continuously moved in the semiconductor film, so that crystal grains continuously grown in the scanning direction can be obtained.

Alternatively, the gate insulating film 1306 may be formed by performing the above-described high-density plasma treatment on the semiconductor films 1305a to 1305f and oxidizing or nitriding the surface. For example, it is formed by plasma treatment in which a rare gas such as He, Ar, Kr, or Xe and a mixed gas such as oxygen, nitrogen oxide (NO ₂ ), ammonia, nitrogen, or hydrogen are introduced. When excitation of plasma in this case is performed by introducing microwaves, high-density plasma can be generated at a low electron temperature. The surface of the semiconductor film can be oxidized or nitrided by oxygen radicals (which may include OH radicals) or nitrogen radicals (which may include NH radicals) generated by this high-density plasma.

  By such treatment using high-density plasma, an insulating film with a thickness of 1 to 20 nm, typically 5 to 10 nm, is formed over the semiconductor film. Since the reaction in this case is a solid-phase reaction, the interface state density between the insulating film and the semiconductor film can be extremely low. Such high-density plasma treatment directly oxidizes (or nitrides) a semiconductor film (crystalline silicon or polycrystalline silicon), so that the thickness of the formed insulating film ideally has extremely small variation. can do. In addition, since oxidation is not strengthened even at the crystal grain boundaries of crystalline silicon, a very favorable state is obtained. That is, the surface of the semiconductor film is solid-phase oxidized by the high-density plasma treatment shown here, thereby forming an insulating film with good uniformity and low interface state density without causing an abnormal oxidation reaction at the grain boundaries. can do.

  As the gate insulating film, only an insulating film formed by high-density plasma treatment may be used, or an insulating film such as silicon oxide, silicon oxynitride, or silicon nitride is deposited by a CVD method using plasma or thermal reaction. , May be laminated. In any case, a transistor formed by including an insulating film formed by high-density plasma in part or all of the gate insulating film can reduce variation in characteristics.

  Further, the semiconductor films 1305a to 1305f obtained by scanning and crystallizing in one direction while irradiating the semiconductor film with a continuous wave laser beam or a laser beam oscillating at a frequency of 10 MHz or more are in the scanning direction of the beam. There is a characteristic that crystals grow. By arranging the transistors in accordance with the scanning direction in the channel length direction (the direction in which carriers flow when a channel formation region is formed) and combining the gate insulating layer, characteristic variation is small and field effect mobility is reduced. A high thin film transistor (TFT) can be obtained.

  Next, a first conductive film and a second conductive film are stacked over the gate insulating film 1306. Here, the first conductive film is formed with a thickness of 20 to 100 nm by a CVD method, a sputtering method, or the like. The second conductive film is formed with a thickness of 100 to 400 nm. The first conductive film and the second conductive film include tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), aluminum (Al), copper (Cu), chromium (Cr), niobium ( Nb) or the like or an alloy material or a compound material containing these elements as a main component. Alternatively, a semiconductor material typified by polycrystalline silicon doped with an impurity element such as phosphorus is used. Examples of the combination of the first conductive film and the second conductive film include a tantalum nitride film and a tungsten film, a tungsten nitride film and a tungsten film, a molybdenum nitride film and a molybdenum film, and the like. Since tungsten and tantalum nitride have high heat resistance, heat treatment for thermal activation can be performed after the first conductive film and the second conductive film are formed. In the case of a three-layer structure instead of a two-layer structure, a stacked structure of a molybdenum film, an aluminum film, and a molybdenum film is preferably employed.

  Next, a resist mask is formed using a photolithography method, and an etching process for forming a gate electrode and a gate line is performed, so that a gate electrode 1307 is formed over the semiconductor films 1305a to 1305f. Here, an example in which the gate electrode 1307 has a stacked structure of a first conductive film 1307a and a second conductive film 1307b is shown.

Next, an impurity element imparting n-type conductivity is added to the semiconductor films 1305a to 1305f at a low concentration by ion doping or ion implantation using the gate electrode 1307 as a mask, and then a resist mask is formed by photolithography. An impurity element which is selectively formed and imparts p-type conductivity is added at a high concentration. As the impurity element exhibiting n-type, phosphorus (P), arsenic (As), or the like can be used. As the p-type impurity element, boron (B), aluminum (Al), gallium (Ga), or the like can be used. Here, phosphorus (P) is used as an impurity element imparting n-type conductivity, and is selectively introduced into the semiconductor films 1305a to 1305f so as to be included at a concentration of 1 × 10 ¹⁵ to 1 × 10 ¹⁹ / cm ^3. An impurity region 1308 indicating a mold is formed. Further, boron (B) is used as an impurity element imparting p-type, and is selectively introduced into the semiconductor films 1305c and 1305e so as to be included at a concentration of 1 × 10 ¹⁹ to 1 × 10 ²⁰ / cm ^3. An impurity region 1309 is formed (see FIG. 13C).

  Subsequently, an insulating film is formed so as to cover the gate insulating film 1306 and the gate electrode 1307. The insulating film is formed by a single layer or a stacked layer of a film containing an inorganic material such as silicon, silicon oxide or silicon nitride, or a film containing an organic material such as an organic resin, by plasma CVD or sputtering. To do. Next, the insulating film is selectively etched by anisotropic etching mainly in the vertical direction, so that an insulating film 1310 (also referred to as a sidewall) in contact with the side surface of the gate electrode 1307 is formed. The insulating film 1310 is used as a mask for doping when an LDD (Lightly Doped Drain) region is formed.

Subsequently, an impurity element imparting n-type conductivity is added to the semiconductor films 1305a, 1305b, 1305d, and 1305f at a high concentration using a resist mask formed by a photolithography method, the gate electrode 1307, and the insulating film 1310 as masks. Thus, an n-type impurity region 1311 is formed. Here, phosphorus (P) is used as an impurity element imparting n-type conductivity, and the semiconductor films 1305a, 1305b, 1305d, and 1305f are selectively used so as to be included at a concentration of 1 × 10 ¹⁹ to 1 × 10 ²⁰ / cm ^3. Then, an impurity region 1311 having an n-type concentration higher than that of the impurity region 1308 is formed.

  Through the above steps, n-channel thin film transistors 1300a, 1300b, 1300d, and 1300f and p-channel thin film transistors 1300c and 1300e are formed (see FIG. 13D).

  In the n-channel thin film transistor 1300a, an impurity which forms a channel formation region in a region of the semiconductor film 1305a overlapping with the gate electrode 1307 and forms a source region or a drain region in a region of the semiconductor film 1305a not overlapping with the gate electrode 1307 and the insulating film 1310 A region 1311 is formed, and a low concentration impurity region (LDD region) is formed between the channel formation region and the impurity region 1311 in the region of the semiconductor film 1305a that overlaps with the insulating film 1310. Similarly, channel formation regions, low-concentration impurity regions, and impurity regions 1311 are also formed in the n-channel thin film transistors 1300b, 1300d, and 1300f.

  In the p-channel thin film transistor 1300c, a channel formation region is formed in a region of the semiconductor film 1305c that overlaps with the gate electrode 1307, and an impurity region 1309 that forms a source region or a drain region is formed in a region of the semiconductor film 1305c that does not overlap with the gate electrode 1307. Has been. Similarly, the channel formation region and the impurity region 1309 are formed in the p-channel thin film transistor 1300e. Note that although the LDD region is not provided in the p-channel thin film transistors 1300c and 1300e here, an LDD region may be provided in the p-channel thin film transistor, or an LDD region may not be provided in the n-channel thin film transistor. Good.

  Next, an insulating film is formed as a single layer or a stacked layer so as to cover the semiconductor films 1305a to 1305f, the gate electrode 1307, and the like, and an impurity region for forming a source region or a drain region of the thin film transistors 1300a to 1300f on the insulating film A conductive film 1313 which is electrically connected to 1309 and 1311 is formed (see FIG. 14A). Insulating film is formed by CVD, sputtering, SOG, droplet discharge, screen printing, etc., inorganic materials such as silicon oxide and silicon nitride, polyimide, polyamide, benzocyclobutene, acrylic, epoxy, etc. A single layer or a stacked layer is formed using an organic material, a siloxane material, or the like. Here, the insulating film is provided in two layers, and a silicon nitride oxide film is formed as the first insulating film 1312a, and a silicon oxynitride film is formed as the second insulating film 1312b. The conductive film 1313 can form a source electrode or a drain electrode of the thin film transistors 1300a to 1300f.

  Note that before the insulating films 1312a and 1312b are formed or after one or more thin films of the insulating films 1312a and 1312b are formed, the crystallinity of the semiconductor film is restored and the activity of the impurity element added to the semiconductor film is increased. Heat treatment for the purpose of hydrogenation of the semiconductor film is preferably performed. For the heat treatment, thermal annealing, laser annealing, RTA, or the like is preferably applied.

  The conductive film 1313 is formed by a CVD method, a sputtering method, or the like by aluminum (Al), tungsten (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper ( Cu), gold (Au), silver (Ag), manganese (Mn), neodymium (Nd), carbon (C), silicon (Si), or an alloy material containing these elements as a main component or The compound material is formed as a single layer or a stacked layer. The alloy material containing aluminum as a main component corresponds to, for example, a material containing aluminum as a main component and containing nickel, or an alloy material containing aluminum as a main component and containing nickel and one or both of carbon and silicon. The conductive film 1313 has, for example, a stacked structure of a barrier film, an aluminum silicon (Al—Si) film, and a barrier film, or a stacked structure of a barrier film, an aluminum silicon (Al—Si) film, a titanium nitride (TiN) film, and a barrier film. Adopt it. Note that the barrier film corresponds to a thin film formed of titanium, titanium nitride, molybdenum, or molybdenum nitride. Aluminum and aluminum silicon are suitable materials for forming the conductive film 1313 because they have low resistance and are inexpensive. In addition, when an upper layer and a lower barrier layer are provided, generation of hillocks of aluminum or aluminum silicon can be prevented. In addition, when a barrier film made of titanium, which is a highly reducing element, is formed, even if a thin natural oxide film is formed on the crystalline semiconductor film, the natural oxide film is reduced, and the crystalline semiconductor film is excellent. Contact can be made.

  Next, an insulating film 1314 is formed so as to cover the conductive film 1313, and conductive films that are electrically connected to the conductive film 1313 that forms source and drain electrodes of the thin film transistors 1300 a and 1300 f over the insulating film 1314, respectively. 1315a and 1315b are formed. In addition, a conductive film 1316 that is electrically connected to the conductive film 1313 that forms the source electrode or the drain electrode of the thin film transistor 1300b is formed. Note that the conductive films 1315a and 1315b and the conductive film 1316 may be formed using the same material at the same time. The conductive films 1315a and 1315b and the conductive film 1316 can be formed using any of the materials described for the conductive film 1313.

  Next, a conductive film 1317 functioning as an antenna is formed so as to be electrically connected to the conductive film 1316 (see FIG. 14B).

  The insulating film 1314 is formed of silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y), silicon nitride oxide (SiNxOy) (x> y), or the like by CVD or sputtering. Single layer made of an insulating film containing oxygen or nitrogen, a film containing carbon such as DLC (diamond-like carbon), an organic material such as epoxy, polyimide, polyamide, polyvinylphenol, benzocyclobutene, acrylic, or a siloxane material such as a siloxane resin Alternatively, a stacked structure can be provided. Note that the siloxane material corresponds to a material including a Si—O—Si bond. Siloxane has a skeleton structure formed of a bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group can also be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent.

  The conductive film 1317 is formed using a conductive material by a CVD method, a sputtering method, a printing method such as screen printing or gravure printing, a droplet discharge method, a dispenser method, a plating method, or the like. Conductive materials are aluminum (Al), titanium (Ti), silver (Ag), copper (Cu), gold (Au), platinum (Pt) nickel (Ni), palladium (Pd), tantalum (Ta), molybdenum An element selected from (Mo) or an alloy material or a compound material containing these elements as a main component is formed in a single layer structure or a laminated structure.

  For example, when the conductive film 1317 that functions as an antenna is formed using a screen printing method, a conductive paste in which conductive particles having a particle size of several nanometers to several tens of micrometers are dissolved or dispersed in an organic resin is selected. Can be provided by printing. Conductor particles include silver (Ag), gold (Au), copper (Cu), nickel (Ni), platinum (Pt), palladium (Pd), tantalum (Ta), molybdenum (Mo) and titanium (Ti). Any one or more metal particles, silver halide fine particles, or dispersible nanoparticles can be used. In addition, as the organic resin contained in the conductive paste, one or more selected from organic resins that function as a binder of metal particles, a solvent, a dispersant, and a coating material can be used. Typically, an organic resin such as an epoxy resin or a silicon resin can be given. In forming the conductive film, it is preferable to fire after extruding the conductive paste. For example, when fine particles containing silver as a main component (for example, a particle size of 1 nm or more and 100 nm or less) are used as a conductive paste material, the conductive film is obtained by being cured by baking in a temperature range of 150 to 300 ° C. Can do. Further, fine particles mainly composed of solder or lead-free solder may be used. In this case, it is preferable to use fine particles having a particle diameter of 20 μm or less. Solder and lead-free solder have the advantage of low cost.

  In addition, the conductive films 1315a and 1315b can function as wirings that are electrically connected to the battery included in the power receiving device of this embodiment in a later step. Further, when the conductive film 1317 functioning as an antenna is formed, a separate conductive film may be formed so as to be electrically connected to the conductive films 1315a and 1315b, and the conductive film may be used as wiring for connecting to the battery. .

Next, after an insulating film 1318 is formed so as to cover the conductive film 1317, a layer including the thin film transistors 1300 a to 1300 f, the conductive film 1317, and the like (hereinafter referred to as “element formation layer 1319”) is peeled from the substrate 1301. Here, after an opening is formed in a region avoiding the thin film transistors 1300a to 1300f by irradiating laser light (for example, UV light) (see FIG. 14C), the element is removed from the substrate 1301 using physical force. The formation layer 1319 can be peeled off. Alternatively, before the element formation layer 1319 is peeled from the substrate 1301, an etching agent may be introduced into the formed opening to selectively remove the peeling layer 1303. As the etchant, a gas or liquid containing halogen fluoride or an interhalogen compound is used. For example, chlorine trifluoride (ClF ₃ ) is used as a gas containing halogen fluoride. Then, the element formation layer 1319 is peeled from the substrate 1301. Note that a part of the peeling layer 1303 may be left without being removed. By doing so, it is possible to suppress the consumption of the etching agent and shorten the processing time required for removing the release layer. Further, the element formation layer 1319 can be held over the substrate 1301 even after the peeling layer 1303 is removed. In addition, cost can be reduced by reusing the substrate 1301 from which the element formation layer 1319 is peeled.

  The insulating film 1318 is formed of silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y), silicon nitride oxide (SiNxOy) (x> y), or the like by CVD or sputtering. Single layer made of an insulating film containing oxygen or nitrogen, a film containing carbon such as DLC (diamond-like carbon), an organic material such as epoxy, polyimide, polyamide, polyvinylphenol, benzocyclobutene, acrylic, or a siloxane material such as a siloxane resin Alternatively, a stacked structure can be provided.

  In this embodiment, after an opening is formed in the element formation layer 1319 by laser light irradiation, the first sheet material 1320 is attached to one surface of the element formation layer 1319 (the surface where the insulating film 1318 is exposed). After the alignment, the element formation layer 1319 is separated from the substrate 1301 (see FIG. 15A).

  Next, the second sheet material 1321 is attached to the other surface (the surface exposed by peeling) of the element formation layer 1319 by performing one or both of heat treatment and pressure treatment (see FIG. 15B). . As the first sheet material 1320 and the second sheet material 1321, a hot melt film or the like can be used.

  In addition, as the first sheet material 1320 and the second sheet material 1321, films provided with antistatic measures for preventing static electricity or the like (hereinafter referred to as antistatic films) can be used. Examples of the antistatic film include a film in which an antistatic material is dispersed in a resin, a film on which an antistatic material is attached, and the like. The film provided with an antistatic material may be a film provided with an antistatic material on one side, or a film provided with an antistatic material on both sides. Furthermore, a film provided with an antistatic material on one side may be attached to the layer so that the surface provided with the antistatic material is on the inside of the film, or on the outside of the film. It may be pasted. Note that the antistatic material may be provided on the entire surface or a part of the film. As the antistatic material here, surfactants such as metals, oxides of indium and tin (ITO), amphoteric surfactants, cationic surfactants and nonionic surfactants can be used. . In addition, as the antistatic material, a resin material containing a crosslinkable copolymer polymer having a carboxyl group and a quaternary ammonium base in the side chain can be used. An antistatic film can be obtained by sticking, kneading, or applying these materials to a film. By sealing with an antistatic film, it is possible to prevent the semiconductor element from being adversely affected by external static electricity or the like when handled as a product.

  Note that the battery is formed so as to be connected to the conductive films 1315a and 1315b; however, the connection with the battery is performed before the element formation layer 1319 is peeled from the substrate 1301 (the stage in FIG. 14B or FIG. 14C). ), Or after the element formation layer 1319 is peeled from the substrate 1301 (step of FIG. 15A), or the element formation layer 1319 may be the first sheet material and the second sheet. You may perform after sealing with a material (stage of FIG.15 (B)). Hereinafter, an example in which the element formation layer 1319 and the battery are connected to each other will be described with reference to FIGS.

  In FIG. 14B, conductive films 1331a and 1331b which are electrically connected to the conductive films 1315a and 1315b, respectively, are formed at the same time as the conductive film 1317 functioning as an antenna. Subsequently, after an insulating film 1318 is formed so as to cover the conductive films 1317 and 1331a and 1331b, openings 1332a and 1332b are formed so that the surfaces of the conductive films 1331a and 1331b are exposed. Then, after an opening is formed in the element formation layer 1319 by laser light irradiation, the first sheet material 1320 is bonded to one surface of the element formation layer 1319 (the exposed surface of the insulating film 1318). The element formation layer 1319 is peeled from the substrate 1301 (see FIG. 16A).

  Next, after the second sheet material 1321 is attached to the other surface (the surface exposed by peeling) of the element formation layer 1319, the element formation layer 1319 is peeled from the first sheet material 1320. Therefore, here, the first sheet material 1320 having weak adhesive force is used. Subsequently, conductive films 1334a and 1334b that are electrically connected to the conductive films 1331a and 1331b through the openings 1332a and 1332b, respectively, are selectively formed (see FIG. 16B).

  The conductive films 1334a and 1334b are formed using a conductive material by a CVD method, a sputtering method, a printing method such as screen printing or gravure printing, a droplet discharge method, a dispenser method, a plating method, or the like. Conductive materials are aluminum (Al), titanium (Ti), silver (Ag), copper (Cu), gold (Au), platinum (Pt) nickel (Ni), palladium (Pd), tantalum (Ta), molybdenum An element selected from (Mo) or an alloy material or a compound material containing these elements as a main component is formed in a single layer structure or a laminated structure.

  Note that here, the conductive films 1334a and 1334b are formed after the element formation layer 1319 is peeled from the substrate 1301, but the element formation layer 1319 is peeled from the substrate 1301 after the conductive films 1334a and 1334b are formed. You may go.

  Next, in the case where a plurality of elements are formed over the substrate, the element formation layer 1319 is divided for each element (see FIG. 17A). For the division, a laser irradiation device, a dicing device, a scribe device, or the like can be used. Here, a plurality of elements formed on one substrate are divided by irradiation with laser light.

  Next, the separated element is electrically connected to a connection terminal of the battery (see FIG. 17B). Here, the conductive films 1334a and 1334b provided in the element formation layer 1319 are connected to the conductive films 1336a and 1336b which are connection terminals of the battery provided over the substrate 1335, respectively. Here, the conductive film 1334a and the conductive film 1336a or the conductive film 1334b and the conductive film 1336b are connected by an anisotropic conductive film (ACF (Anisotropic Conductive Film)) or an anisotropic conductive paste (ACP (Anisotropic)). The case where it electrically connects by making it crimp through the material which has adhesiveness, such as Conductive Paste)) is shown. Here, an example is shown in which the conductive particles 1338 included in the adhesive resin 1337 are used for connection. In addition, it is also possible to perform connection using a conductive adhesive such as silver paste, copper paste, or carbon paste, solder bonding, or the like.

  When the battery is larger than the element, as shown in FIGS. 16 and 17, a plurality of elements are formed on a single substrate, and the elements are divided and connected to the battery, thereby forming a single substrate. Since the number of elements that can be manufactured can be increased, the power receiving device can be manufactured at lower cost.

  After that, as shown in the second embodiment, a booster antenna may be provided.

  Note that this embodiment mode can be freely combined with Embodiment Mode 1 or Embodiment Mode 2.

(Embodiment 4)
In this embodiment, an example of a method for manufacturing a power receiving device portion, which is different from that in the above embodiment, will be described with reference to drawings. In this embodiment, a mobile phone or a digital video camera is assumed as the mobile electronic device described in Embodiment 1, and a structure in which an antenna circuit, a signal processing circuit, and a battery are provided over the same substrate will be described. Note that it is preferable that the antenna circuit, the signal processing circuit, and the battery be formed over the substrate at once, and the transistor included in the signal processing circuit be a thin film transistor because the size can be reduced.

  In the present embodiment, the antenna circuit described in Embodiments 1 and 2 will be simply referred to as an antenna because only the shape and the mounting position thereof will be described.

  First, a separation layer 1803 is formed over one surface of a substrate 1801 with an insulating film 1802 interposed therebetween, and then an insulating film 1804 functioning as a base film and a conductive film 1805 are stacked (see FIG. 18A). Note that the insulating film 1802, the peeling layer 1803, the insulating film 1804, and the conductive film 1805 can be formed successively.

  The conductive film 1805 includes tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), nickel (Ni), cobalt (Co), zirconium (Zr), zinc (Zn), An element selected from ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), or a film made of an alloy material or compound material containing the element as a main component, or a single layer. Form. These materials can be formed by using various CVD methods such as a sputtering method and a plasma CVD method.

  The substrate 1801, the insulating film 1802, the peeling layer 1803, and the insulating film 1804 can be formed using any of the materials of the substrate 1301, the insulating film 1302, the peeling layer 1303, and the insulating film 1304 described in the above embodiment modes, respectively. it can.

  Next, the conductive film 1805 is selectively etched to form conductive films 1805a to 1805e, and insulating films 1806 and 1807 are stacked so as to cover the conductive films 1805a to 1805e (see FIG. 18B). ).

  The insulating films 1806 and 1807 are formed using silicon oxide, silicon nitride, silicon oxynitride (SiOxNy) (x> y> 0), silicon nitride oxide (SiNxOy) (x> y> 0) by a CVD method, a sputtering method, or the like. It is formed using an insulating material such as. For example, the insulating film 1806 can be formed using silicon nitride oxide and the insulating film 1807 can be formed using silicon oxynitride. Although an example in which two insulating films are stacked is shown here, only one of the insulating films 1806 or 1807 may be provided, or three or more insulating films may be stacked. .

  Next, semiconductor films 1808a to 1808d are selectively formed above the conductive films 1805a to 1805d (see FIG. 18C). Here, an amorphous semiconductor film (eg, an amorphous silicon film) is formed to a thickness of 25 to 200 nm (preferably 30 to 150 nm) over the insulating film 1807 by sputtering, LPCVD, plasma CVD, or the like. Then, after the amorphous semiconductor film is crystallized, it is selectively etched to form semiconductor films 1808a to 1808d. As the material for the semiconductor film, the crystallization method, and the like, the methods described in the above embodiment modes can be used. The insulating films 1806 and 1807 and the amorphous semiconductor film can be formed successively.

  Note that in the case where the conductive film 1805a to 1805d is uneven on the surface of the insulating film 1807, the insulating film 1807 is planarized before the amorphous semiconductor film is formed over the insulating film 1807. It is preferable to keep the surface of 1807 flat. As the planarization process, a polishing process such as a CMP method can be used. By performing a polishing process such as a CMP method, a semiconductor film can be formed over the insulating film 1807 whose surface is planarized as shown in FIG. 21A. Therefore, the element is formed using the semiconductor films 1808a to 1808d. The influence on the characteristics of the element can be reduced when forming the film.

Next, a gate insulating film 1809 is formed so as to cover the semiconductor films 1808a to 1808d, a gate electrode 1810 is selectively formed over the semiconductor films 1808a to 1808c, and then the semiconductor film 1808a is formed using the gate electrode 1810 as a mask. An impurity element is added to ˜1808d to form an impurity region 1811 (see FIG. 18D). Here, an example in which the gate electrode 1810 is provided with a stacked structure of a first conductive film 1810a and a second conductive film 1810b is shown. As the impurity element, an impurity element imparting n-type or p-type is added. As the impurity element exhibiting n-type, phosphorus (P), arsenic (As), or the like can be used. As the p-type impurity element, boron (B), aluminum (Al), gallium (Ga), or the like can be used. Here, phosphorus (P), which is an impurity element imparting n-type conductivity, is introduced into the semiconductor films 1808a to 1808d so as to be contained at a concentration of 1 × 10 ¹⁹ to 1 × 10 ²⁰ / cm ³ , thereby exhibiting n-type impurities. Region 1811 is formed. Note that the present invention is not limited thereto, and an impurity element imparting p-type conductivity may be formed by adding an impurity element imparting p-type conductivity, or the impurity elements imparting n-type and p-type conductivity may be selectively used in the semiconductor films 1808a to 1808a. It may be introduced at 1808d.

  Through the above steps, n-channel thin film transistors 1800a to 1800c and an element 1800d functioning as a capacitor are formed (see FIG. 18D).

  In the n-channel thin film transistor 1800a, a channel formation region is formed in a region of the semiconductor film 1808a overlapping with the gate electrode 1810, and a source region or a drain region is formed adjacent to the channel region in a region of the semiconductor film 1808a not overlapping with the gate electrode 1810. Impurity regions 1811 to be formed are formed. Similarly, the n-channel thin film transistors 1800b and 1800c are also formed with an impurity region 1811 for forming a channel formation region and a source region or a drain region.

  In the element 1800d, a capacitor is formed by a stacked structure of the conductive film 1805d, the insulating films 1806 and 1807, and the semiconductor film in the impurity region 1811 into which the impurity element is introduced.

  Note that although the example in which the n-channel thin film transistors 1800a to 1800c are provided is shown here, a p-channel thin film transistor may be provided, and as shown in the above embodiment mode, the gate electrode 1810 is in contact with the side surface to be insulated. A structure in which a low-concentration impurity region (LDD region) is provided in the semiconductor films 1808a to 1808c can also be provided.

  Here, an example is shown in which the conductive films 1805a to 1805c are formed larger than the semiconductor films 1808a to 1808c (the conductive films 1805a to 1805c are formed so as to overlap with the channel formation regions and the impurity regions 1811 of the thin film transistors 1800a to 1800c). However, it is not limited to this. For example, the conductive films 1805a to 1805c may be provided so as to overlap with part of the impurity regions 1811 of the thin film transistors 1800a to 1800c and the entire surface of the channel formation region (see FIG. 21A), or part of the impurity regions 1811 and the channel. The conductive films 1805a to 1805c may be provided so as to overlap with part of the formation region (see FIG. 21B), or the conductive films 1805a to 1805c may be provided so as to overlap with part of the channel formation region. . In such a case, it is preferable to planarize the insulating film 1807 by performing a polishing process such as CMP.

  Note that by providing the conductive films 1805a to 1805c, damage to the thin film transistor can be prevented, ESD (Electrostatic Discharge) can be prevented, the short channel effect can be suppressed, the threshold value can be controlled, and the number of processes can be reduced. It becomes.

That is, the power receiving device including the thin film transistors 1800a to 1800c suppresses bending in the channel formation region and the impurity region by the conductive film provided so as to overlap with the channel formation region and the impurity region of the thin film transistors 1800a to 1800c even when the power reception device is bent. Therefore, the thin film transistors 1800a to 1800c can also be prevented from being damaged.

Further, when the power receiving device is manufactured, the conductive films 1805a to 1805c serve as a charge escape path or a charge diffusion region, thereby reducing local charge accumulation and reducing electric field concentration, thereby preventing ESD. it can.

In addition, by blocking the influence from the drain to the source in each of the thin film transistors 1800a to 1800c with the conductive films 1805a to 1805c, the short channel effect can be suppressed even when the channel length is shortened. That is, the short channel effect (threshold voltage Vth of the transistor is rapidly shifted and the drain current rises in the subthreshold region) which becomes a problem with the miniaturization of the thin film transistors 1800a to 1800c. Etc.) can be suppressed.

The threshold values of the thin film transistors 1800a to 1800c can be controlled by potentials input to the conductive films 1805a to 1805c.

FIG. 24B is a graph showing the relationship between the drain current and gate voltage of an N-type MOS transistor. Ideally, when the gate voltage Vg is positive, the drain current Id is sufficiently large. When the gate voltage Vg is 0 or less, the drain current Id is preferably 0. Actually, however, a drain current Id flows as much as I even when the gate voltage Vg is 0 as shown by a curve 2404. Although the current of each transistor is not large, the power receiving device is provided with a large number of transistors, and when these leakage currents are combined, the current is never small. Such a leakage current increases the power consumption of the power receiving apparatus during standby. That is, the consumption of power stored in the battery is increased.

  This leakage current can be reduced by adding a small amount of impurities to the channel region of the transistor and shifting the curve shown in FIG. 24B to the right. However, in that case, the current when Vg is positive also decreases, and there is a problem that the frequency characteristics of the circuit are deteriorated.

  In order to solve the above problems, gate electrodes are provided on the upper and lower sides of the semiconductor film constituting the transistor. That is, when the transistor is viewed from the cross section, the semiconductor film is located between the first gate electrode and the second gate electrode. Then, a logic signal is applied to the first gate electrode and a threshold control signal is applied to the second gate electrode, so that the threshold value of the transistor constituting the power receiving device is made variable according to the potential of the second gate electrode. In this embodiment, the conductive films 1805a to 1805c can be used for the second gate electrodes of the thin film transistors 1800a to 1800c, respectively.

  FIG. 24A shows Id-Vg characteristics of a transistor including the first gate electrode and the second gate electrode. FIG. 24A shows three types of curves 2401 to 2403. The curve 2402 is a curve when a positive voltage is applied to the second gate electrode. In such a case, the curve shifts to the left and more current flows. A curve 2401 is a case where a voltage of 0 is applied to the second gate electrode. Such a case is the same as the conventional example. A curve 2403 is a curve when a negative voltage is applied to the second gate electrode. In such a case, the curve shifts to the right, current becomes difficult to flow, and leakage current is also reduced. As described above, by providing the power receiving device according to this embodiment with a threshold control function and shifting the curve of the Id-Vg characteristics of the transistor, leakage current can be reduced.

In addition, by using the conductive film 1805e formed at the same time as the conductive films 1805a to 1805c as an antenna, the conductive film 1815 and the conductive film 1816 which are formed in the following description can be omitted.

  Next, an insulating film 1812 is formed so as to cover the thin film transistors 1800a to 1800c and the element 1800d, and the conductive film is electrically connected to an impurity region 1811 that forms a source region or a drain region of the thin film transistors 1800a to 1800c over the insulating film 1812. A film 1813 is formed (see FIG. 19A).

  The insulating film 1812 is formed by CVD, sputtering, SOG, droplet discharge, screen printing, or the like, an inorganic material such as silicon oxide or silicon nitride, polyimide, polyamide, benzocyclobutene, acrylic, epoxy A single layer or a stacked layer is formed using an organic material such as siloxane material or the like.

  The conductive film 1813 can be formed using any material of the conductive film 1313 described in the above embodiment.

  Next, an insulating film 1814 is formed so as to cover the conductive film 1813, and the conductive films 1815 that are electrically connected to the thin film transistors 1800a and 1800c that form source and drain electrodes are formed over the insulating film 1814, respectively. After that, a conductive film 1816 functioning as an antenna is formed so as to be electrically connected to the conductive film 1815 (see FIG. 19B).

  Next, after an insulating film 1817 is formed so as to cover the conductive film 1816, a layer including the thin film transistors 1800a to 1800c, the element 1800d, the conductive film 1816, and the like (hereinafter referred to as an “element formation layer 1820”) is peeled from the substrate 1801. To do. Any of the methods shown in the above embodiment modes can be used as the peeling method.

  Here, after an opening is formed in the element formation layer 1820 by laser light irradiation, the first sheet material 1818 is bonded to one surface of the element formation layer 1820 (the exposed surface of the insulating film 1817). Then, the element formation layer 1820 is separated from the substrate 1801 (see FIG. 20A).

  Next, one or both of heat treatment and pressure treatment is performed on the other surface (the surface exposed by peeling) of the element formation layer 1820 to bond the second sheet material 1819. As the first sheet material 1818 and the second sheet material 1819, a hot melt film or the like can be used.

  Through the above steps, a power receiving device can be manufactured (see FIG. 20B). Note that in this embodiment, the element 1800d that forms a capacitor can be used as a battery. Further, a battery may be provided separately from the element 1800d. In this case, a battery can be provided using the method described in Embodiment Mode 3.

  Note that the power receiving device described in this embodiment is not limited thereto. For example, a conductive film functioning as a battery or an antenna may be provided below the thin film transistors 1800a to 1800c.

  An example in which a battery is provided below the thin film transistors 1800a to 1800c is shown in FIG. Here, a conductive film 1831a is provided so as to be electrically connected to the conductive film 1813 functioning as a source electrode or a drain electrode of the thin film transistor 1800b, and connection between the conductive film 1831a and the conductive film 1833a forming connection wiring of the battery is performed. In this example, the process is performed below the element formation layer 1820 (a surface exposed by peeling the element formation layer 1820 from the substrate 1801). Here, a thin film transistor is provided instead of the element 1800d for forming a capacitor, a conductive film 1833a is provided so as to be electrically connected to the conductive film 1813 functioning as a source electrode or a drain electrode of the thin film transistor, and the conductive film 1831b In this example, the conductive film 1833b forming the connection wiring of the battery is connected below the element formation layer 1820 (the surface exposed by peeling off the element formation layer 1820 from the substrate 1801).

  In such a case, in FIG. 19A, a first opening is formed in the gate insulating film 1809 and the insulating film 1812 in order to expose the impurity regions 1811 of the thin film transistors 1800a to 1800c, and at the same time, the insulating film 1806, A second opening is formed in 1807, the gate insulating film 1809, and the insulating film 1812, a conductive film 1813 is provided so as to fill the first opening, and a conductive film 1831a is filled so as to fill the second opening. , 1831b. The first opening and the second opening can be formed at the same time. When the first opening is formed, the semiconductor films 1808a to 1808c function as a stopper, and the second opening is formed. In this case, the release layer 1803 functions as a stopper. After that, the conductive film 1816 functioning as an antenna is formed as described above (see FIG. 22A), and then the element formation layer 1820 is peeled from the substrate 1801.

  After that, the conductive films 1831a and 1831b formed on the exposed surface of the element formation layer 1820 peeled from the substrate 1801 are connected to the conductive films 1833a and 1833b serving as connection wirings of the battery provided over the substrate 1832, respectively ( (See FIG. 22B). Here, the connection between the conductive film 1831a and the conductive film 1833a, or the connection between the conductive film 1831b and the conductive film 1833b is an anisotropic conductive film (ACF) or an anisotropic conductive paste (ACP (Anisotropic). The case where it electrically connects by making it crimp through the material which has adhesiveness, such as Conductive Paste)) is shown. Here, an example is shown in which the conductive particles 1835 included in the adhesive resin 1834 are used for connection. In addition, it is also possible to perform connection using a conductive adhesive such as silver paste, copper paste, or carbon paste, solder bonding, or the like.

  Note that in this embodiment, a conductive film functioning not only as a battery but also as an antenna may be provided below the thin film transistors 1800a to 1800c. An example in which a conductive film 1816b functioning as a battery and an antenna is provided below the thin film transistors 1800a to 1800c is illustrated in FIG.

  Here, a conductive film 1831c is provided so as to be electrically connected to the conductive film 1813 functioning as a source electrode or a drain electrode of the thin film transistor 1800c, and the conductive film 1831c and the conductive film 1816b functioning as an antenna are connected to the element formation layer. An example is shown below 1820 (surface exposed by peeling the element formation layer 1820 from the substrate 1801). Moreover, the example which provided the battery similarly to the said FIG. 22 is shown.

  In such a case, in FIG. 19A, a first opening is formed in the gate insulating film 1809 and the insulating film 1812 in order to expose the impurity regions 1811 of the thin film transistors 1800a to 1800c, and at the same time, the insulating film 1806, A second opening is formed in 1807, the gate insulating film 1809, and the insulating film 1812, a conductive film 1813 is provided so as to fill the first opening, and a conductive film 1831a is filled so as to fill the second opening. , 1831b and 1831c are formed. The first opening and the second opening can be formed at the same time. When the first opening is formed, the semiconductor films 1808a to 1808c function as a stopper, and the second opening is formed. In this case, the release layer 1803 functions as a stopper. After that, the conductive film 1816 functioning as an antenna is formed as described above (see FIG. 23A), and then the element formation layer 1820 is peeled from the substrate 1801.

  After that, the conductive films 1831a and 1831b formed on the exposed surface of the element formation layer 1820 peeled from the substrate 1801 are connected to the conductive films 1833a and 1833b serving as connection wirings of the battery provided over the substrate 1832, respectively ( (See FIG. 23B). In addition, the conductive film 1831c formed over the exposed surface of the element formation layer 1820 which is separated from the substrate 1801 is connected to the conductive film 1816b which functions as an antenna provided over the substrate 1836.

  In the case where the size of the battery or the antenna is larger than the element provided with the thin film transistors 1800a to 1800c as described above, the element formation layer and the battery or the antenna may be attached to each other as shown in FIGS. preferable. When using a battery or antenna larger than the element, a plurality of elements are formed on a single substrate, and the battery and the antenna are bonded to the element after the element is divided. It can be produced.

Note that this embodiment can be freely combined with the other embodiments described above.

  In this embodiment, an application of a mobile electronic device including the power receiving device of the present invention will be described. A mobile electronic device including the power receiving device of the present invention includes, for example, a mobile phone, a digital video camera, a computer, a portable information terminal (such as a mobile computer, a mobile phone, a portable game machine, or an electronic book), and a recording medium. An image reproducing apparatus (specifically, Digital Versatile Disc (DVD), etc.) may be mentioned. An example will be described below with reference to the drawings.

  In this example, the antenna circuit described in Embodiments 1 and 2 is simply referred to as an antenna because only the shape and the mounting position thereof are described.

FIG. 25A illustrates an example of a cellular phone, which includes a main body 2501, an audio output portion 2502, an audio input portion 2503, a display portion 2504, operation switches 2505, an antenna 2506, and the like. A power receiving device of the present invention includes a signal processing circuit and a battery inside a main body 2501 and can receive a wireless signal from the outside by an antenna 2506 to charge the battery. Therefore, when charging the battery, it is possible to supply power to the display of the display portion 2504 without charging with a dedicated charger.

  FIG. 25B illustrates an example of a portable computer (also referred to as a laptop computer), which includes a main body 2511, a housing 2512, a display portion 2513, a keyboard 2514, an external connection port 2515, a pointing device 2516, an antenna 2517, and the like. ing. The power receiving device of the present invention includes a signal processing circuit and a battery inside a main body 2511, and can receive a radio signal from the outside with an antenna 2517 to charge the battery. Therefore, when charging the battery, it is possible to supply power to the display of the display portion 2513 without charging with a dedicated charger.

FIG. 25C illustrates an example of a digital camera, which includes a main body 2521, a display portion 2522, operation keys 2523, a speaker 2524, a shutter 2525, an image receiving portion 2526, an antenna 2527, and the like. A power receiving device of the present invention includes a signal processing circuit and a battery inside a main body 2521, and can receive a wireless signal from the outside by an antenna 2527 to charge the battery. Therefore, when charging the battery, it is possible to supply power to the display of the display portion 2522 without charging with a dedicated charger.

FIG. 25D illustrates an example of a portable image playback device (specifically, a DVD playback device) provided with a recording medium, which includes a main body 2531, a housing 2532, a first display portion 2533, and a second display portion. 2534, a recording medium (DVD or the like) reading unit 2535, operation keys 2536, a speaker unit 2537, an antenna 2538, and the like. A power receiving device of the present invention includes a signal processing circuit and a battery inside a main body 2531, and can receive a wireless signal from the outside by an antenna 2538 to charge the battery. Therefore, when the battery is charged, power can be supplied to the first display portion 2533, the second display portion 2534, and the like without charging with a dedicated charger.

FIG. 25E illustrates a digital video camera which includes a main body 2541, a display portion 2542, an audio input portion 2543, operation switches 2544, a battery 2545, an image receiving portion 2546, an antenna 2547, and the like. A power receiving device of the present invention includes a signal processing circuit and a battery inside a main body 2541, and can receive a wireless signal from the outside with an antenna 2547 to charge the battery. Therefore, when charging the battery, it is possible to supply power to the display of the display portion 2542 without charging with a dedicated charger.

FIG. 25F illustrates a portable information terminal which includes a main body 2551, a stylus 2552, a display portion 2553, operation buttons 2554, an external interface 2555, an antenna 2556, and the like. The power receiving device of the present invention includes a signal processing circuit and a battery inside a main body 2551, and can receive a wireless signal from the outside with an antenna 2556 to charge the battery. Therefore, when charging the battery, it is possible to supply power to the display of the display portion 2553 without charging with a dedicated charger.

  FIG. 26 shows a television receiver that can carry only a display wirelessly. A housing 2601 incorporates a video signal receiver and the power receiving device of the present invention, and the display portion 2602 and the speaker portion 2603 are driven by a battery in the power receiving device. The battery can be charged by receiving a wireless signal from the power feeder 2604 by the power receiving device. The signal transmitted wirelessly can be supplied by supplying the antenna 2606A provided on the display side from the antenna 2606B provided on the power feeder side.

The power feeder 2604 can transmit and receive a video signal. Therefore, even when the display is detached from the power feeder as shown in FIG. 26B, the video signal is transmitted to the signal receiver of the display. be able to. The housing 2601 is controlled by operation keys 2605. The apparatus illustrated in FIG. 26 can also be called a video / audio two-way communication apparatus because a signal can be sent from the housing 2601 to the power feeder 2604 by operating the operation key 2605. In addition, by operating the operation key 2605, a signal is transmitted from the housing 2601 to the power feeder 2604, and a signal that can be transmitted by the power feeder 2604 is received by another electronic device, thereby controlling communication of the other electronic device. It can be said to be a general-purpose remote control device.

Note that by attaching the display portion 2602 and the speaker portion 2603 to the power feeder, the device can be viewed as a stationary television receiver. In the form of a stationary television receiver, the power feeder, the display portion 2602, and the speaker portion 2603 may be directly connected to receive power.

FIG. 27A illustrates a power supply system using a large-sized power feeder and a mobile electronic device such as a car or a bicycle having a battery.

A power feeder 2700 in FIG. 27A uses a parabolic antenna 2701 having a parabolic curved reflecting surface to transmit electric power to a car or a bicycle including a power receiving device including an antenna 2702 and a battery 2703 by a radio signal. Therefore, in the case of an automobile, it is particularly suitable when the battery is exhausted, which is a case where it is difficult to generate power with a generator using the power of the combustion engine. Bicycles that can be driven by power using electric power on hills that are difficult to drive by human power, such as bicycles with so-called assist functions, can be transferred to the battery after a certain period of time even if the battery is fully charged. Can complete the charging. A bicycle with an assist function has an electric motor and a battery. In a bicycle having a battery, the battery can be charged without using charging from a home AC power source, which is preferable because the burden of charging the battery by wire is reduced.

  In the automobile in FIG. 27A, the booster antenna described in the above embodiment is preferably provided. FIG. 27B illustrates a structure of an automobile including a power receiving device and including a booster antenna. In FIG. 27B, the position where the booster antenna 2706 is provided is not particularly limited as long as the antenna 2704 connected to the battery 2705 provided in the automobile is electromagnetically induced by magnetic field coupling with the booster antenna. However, the booster antenna is required to have a larger shape than the antenna because of its function. Therefore, for example, as shown in FIG. 27B, it may be provided along the outer periphery of the automobile, or may be provided at a plurality of locations such as a windshield and a rear glass.

Moreover, the structure of the power receiving device provided in the power feeder and the mobile electronic device covers a wide variety of forms. As an example, a description will be given with reference to FIG.

In the structure shown in FIG. 28A, a power supply system of a power receiving apparatus having a power feeder and moving means between automobiles is shown. FIG. 28A shows a structure in which both automobiles include a battery and an antenna. Here, it is assumed that an antenna of one automobile has a battery 2801 and the antenna functions as a power receiving antenna 2802. The other automobile has a battery 2803 and the antenna functions as a power feeding antenna 2804.

In FIG. 28A, even when the battery 2801 of one car is discharged, the power charged in the battery 2803 of the other car is output from the power feeding antenna 2804 to the power receiving antenna 2802 as a radio signal. By doing so, the battery 2801 can be charged. Note that the charging time can be shortened by electromagnetic induction associated with magnetic field coupling by outputting a wireless signal for power supply by bringing the power receiving antenna 2802 and the power feeding antenna 2804 close to each other. In the configuration of FIG. 28A, since there is no need to connect wired batteries for supplying power, which is conventionally performed, the antenna can be used even if the user remains in the car. This embodiment is very suitable because the charging work accompanying the reception of the signal can be performed. Further, according to the present invention, a plurality of the other cars can be arranged, and the battery can be charged from the plurality of power feeding antennas. Therefore, the battery charging time can be shortened.

FIG. 28B illustrates another structure different from the structure illustrated in FIG. The structure shown in FIG. 28B is particularly suitable for a so-called electric vehicle that obtains power by electric power. An electric vehicle is driven using an electric motor.

In the structure shown in FIG. 28B, when the automobile comes on the piezoelectric sensor 2806, it supplies power by a wireless signal from the power feeder 2805. Along with the power supply by the wireless signal from the power feeder 2805, the wireless signal is received by the antenna 2807 included in the power receiving device in the automobile, and the battery 2808 is charged. Therefore, it is not necessary to connect the battery 2808 to a wired AC power source for charging, and the user can charge the battery while in the vehicle, thereby improving convenience. .

  As described above, the power receiving device of the present invention can be provided and used for any article that is driven with electric power.

Note that in the form of the mobile electronic device shown in this embodiment, the shape of the antenna is not limited to the shape shown in the drawings, and can be appropriately replaced with the shape of the antenna shown in the other embodiments. .

  This embodiment can be freely combined with the above embodiment modes.

FIG. 3 illustrates a structure of a power receiving device in Embodiment 1. FIG. 3 illustrates a structure of a power receiving device in Embodiment 1. FIG. 3 illustrates a structure of a power receiving device in Embodiment 1. FIG. 3 illustrates a structure of a power receiving device in Embodiment 1. FIG. 3 illustrates a structure of a power receiving device in Embodiment 1. FIG. 3 illustrates a structure of a power receiving device in Embodiment 1. FIG. 3 illustrates a structure of a power receiving device in Embodiment 1. FIG. 3 illustrates a structure of a power receiving device in Embodiment 1. FIG. 6 illustrates a structure of a power receiving device in Embodiment 2. FIG. 6 illustrates a structure of a power receiving device in Embodiment 2. FIG. 6 illustrates a structure of a power receiving device in Embodiment 2. FIG. 6 illustrates a structure of a power receiving device in Embodiment 2. FIG. 9 illustrates a structure of a power receiving device in Embodiment 3. FIG. 9 illustrates a structure of a power receiving device in Embodiment 3. FIG. 9 illustrates a structure of a power receiving device in Embodiment 3. FIG. 9 illustrates a structure of a power receiving device in Embodiment 3. FIG. 9 illustrates a structure of a power receiving device in Embodiment 3. FIG. 6 illustrates a structure of a power receiving device in Embodiment 4. FIG. 6 illustrates a structure of a power receiving device in Embodiment 4. FIG. 6 illustrates a structure of a power receiving device in Embodiment 4. FIG. 6 illustrates a structure of a power receiving device in Embodiment 4. FIG. 6 illustrates a structure of a power receiving device in Embodiment 4. FIG. 6 illustrates a structure of a power receiving device in Embodiment 4. 6A and 6B illustrate a structure of a power receiving device in Embodiment 4. The figure shown about the form of an Example. The figure shown about the form of an Example. The figure shown about the form of an Example. The figure shown about the form of an Example. FIG. 3 illustrates a structure of a power receiving device in Embodiment 1.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 Mobile electronic device 101 Power receiving apparatus part 102 Antenna circuit 103 Signal processing circuit 104 Battery 105 Power supply load part 106 Rectifier circuit 108 Power supply circuit 109 Display part 110 Integrated circuit part 111 Pixel part 112 Display control part 201 Power feeder 401 Antenna 402 Resonance capacity 403 antenna circuit 404 diode 405 diode 406 smoothing capacity 407 rectifier circuit 600 power supply 601 power transmission control unit 602 antenna circuit 603 antenna 604 resonance capacity 700 power receiving device unit 702 antenna circuit 703 power transmission control unit 704 antenna circuit 705 antenna 1600 power receiving device unit 1601 antenna 1602 Booster antenna 1603 Antenna circuit 851 Power generation element 909 Drive unit 910 Peripheral power unit 911 Combustion engine unit 912 Drive control unit 1001 Resistance 1002 G Transistor 1003 transistor 1004 current supply resistor 1005 transistor 1006 transistor 1007 transistor 1008 transistor 1009 transistor 1010 resistor 102A antenna circuit 102B booster antenna 1301 substrate 1302 insulating film 1303 peeling layer 1304 insulating film 1305 semiconductor film 1306 gate insulating film 1307 gate electrode 1308 impurity region 1309 Impurity region 1310 Insulating film 1311 Impurity region 1313 Conductive film 1314 Insulating film 1316 Conductive film 1317 Conductive film 1318 Insulating film 1319 Element formation layer 1320 Sheet material 1321 Sheet material 1335 Substrate 1337 Resin 1338 Conductive particle 1801 Substrate 1802 Insulating film 1803 Release layer 1804 Insulating film 1805 Conductive film 1806 Insulating film 1807 Insulating Film 1809 Gate insulating film 1810 Gate electrode 1810a Conductive film 1810b Conductive film 1811 Impurity region 1812 Insulating film 1813 Conductive film 1814 Insulating film 1815 Conductive film 1816 Conductive film 1817 Insulating film 1818 Sheet material 1819 Sheet material 1820 Element forming layer 1832 Substrate 1834 Resin 1835 Conductive particle 1836 Substrate 2401 Curve 2402 Curve 2403 Curve 2404 Curve 2501 Main body 2502 Audio output unit 2503 Audio input unit 2504 Display unit 2505 Operation switch 2506 Antenna 2511 Main body 2512 Case 2513 Display unit 2514 Keyboard 2515 External connection port 2516 Pointing device 2517 Antenna 2521 Main body 2522 Display unit 2523 Operation key 2524 Speaker 2525 Shutter 252 6 Image receiving unit 2527 Antenna 2531 Main body 2532 Housing 2533 Display unit 2534 Display unit 2535 Recording medium reading unit 2536 Operation key 2537 Speaker unit 2538 Antenna 2541 Main unit 2542 Display unit 2543 Audio input unit 2544 Operation switch 2545 Battery 2546 Image receiving unit 2547 Antenna 2551 Main unit 2552 Stylus 2553 Display unit 2554 Operation button 2555 External interface 2556 Antenna 2601 Display unit 2602 Display unit 2603 Speaker unit 2604 Feeder 2605 Operation key 2700 Feeder 2701 Parabolic antenna 2702 Antenna 2703 Battery 2704 Antenna 2705 Battery 2706 Booster antenna 2801 Battery 2802 For power reception Antenna 2803 Battery 2 04 Feeding antenna 2805 Feeder 2806 Piezoelectric sensor 2807 Antenna 2808 Battery 1300a Thin film transistor 1300b Thin film transistor 1300c Thin film transistor 1300d Thin film transistor 1300e Thin film transistor 1300f Thin film transistor 1305a Semiconductor film 1305b Semiconductor film 1305c Semiconductor film 1305d Semiconductor film 1305e Semiconductor film 1307b Conductive film 1307b Conductive film 1307b 1312a insulating film 1312b insulating film 1315a conductive film 1315b conductive film 1331a conductive film 1331b conductive film 1332a opening 1332b opening 1334a conductive film 1334b conductive film 1336a conductive film 1336b conductive film 1800a thin film transistor 1800b thin film transistor 1800c thin film transistor Transistor 1800d element 1805a conductive film 1805b conductive film 1805c conductive film 1805d conductive film 1805e conductive film 1808a semiconductor film 1808b semiconductor film 1808c semiconductor film 1808d semiconductor film 1816b conductive film 1831a conductive film 1831b conductive film 1831c conductive film 1833a conductive film 1833b conductive film 2606A antenna 2606B antenna

Claims (8)

An automobile having a power receiving device,
The power receiving device is:
An antenna circuit;
A rectifier circuit electrically connected to the antenna circuit;
A battery electrically connected to the rectifier circuit;
A power supply circuit electrically connected to the battery;
A booster antenna magnetically coupled to the antenna circuit,
When the radio signal received by the antenna circuit via the booster antenna is input to the battery via the rectifier circuit, the battery is charged.
The battery supplies power to the power supply circuit ;
An automobile characterized in that the booster antenna is provided on an outer peripheral portion, a windshield, or a rear glass. In claim 1,
The automobile according to claim 1, wherein the booster antenna has a coil shape. In claim 2,
An automobile characterized in that both ends of a coil of the booster antenna are connected to both ends of a capacitor. In any one of Claim 1 thru | or 3,
The booster antenna receives a radio signal by an electromagnetic induction method. In any one of Claims 1 thru | or 4,
The battery is a lithium battery, a lithium polymer battery, a lithium ion battery, a nickel metal hydride battery, a nickel cadmium battery, an organic radical battery, a lead storage battery, an air secondary battery, a nickel zinc battery, a silver zinc battery, or a capacitor, Car to do. In any one of Claims 1 thru | or 5,
Having a power generation element,
The automobile is characterized in that the battery is charged by the power generation element. In claim 6,
The power generation element uses a solar cell, a piezoelectric element, or a microstructure. In claim 6,
The automobile is characterized in that the power generation element uses a generator that generates power by the power of a combustion engine.

Images