JP5037195B2 - Inspection apparatus and inspection method - Google Patents

Inspection apparatus and inspection method Download PDF

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JP5037195B2
JP5037195B2 JP2007092779A JP2007092779A JP5037195B2 JP 5037195 B2 JP5037195 B2 JP 5037195B2 JP 2007092779 A JP2007092779 A JP 2007092779A JP 2007092779 A JP2007092779 A JP 2007092779A JP 5037195 B2 JP5037195 B2 JP 5037195B2
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temperature
measuring means
temperature control
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component housing
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JP2008249571A (en
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仁 菅
秀一 近松
雅恭 越智
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Hitachi High Tech Corp
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本発明は、検査装置および検査方法に関する。例えば、半導体検査装置をはじめとする光学系によって微小な異物等の欠陥の存在を検査する欠陥検査装置およびその方法に適している。   The present invention relates to an inspection apparatus and an inspection method. For example, the present invention is suitable for a defect inspection apparatus and method for inspecting the presence of defects such as minute foreign matters using an optical system such as a semiconductor inspection apparatus.

半導体回路の微細化に伴い、半導体基板上の微小な異物が半導体製品の品質に影響を与えるようになってきた。このような半導体基板上の異物を検出する技術の１つとして特許文献１には、パターンからの回折光を低減するために回折光が入らない方向から直線上の高効率照明を実現し、パターンによる信号のばらつきに応じて閾値を設定することにより、検出感度およびスループットを向上する検査装置およびその方法が開示されている。   With the miniaturization of semiconductor circuits, minute foreign matter on a semiconductor substrate has come to affect the quality of semiconductor products. As one of the techniques for detecting such foreign matter on a semiconductor substrate, Patent Document 1 discloses a highly efficient illumination on a straight line from a direction in which diffracted light does not enter in order to reduce diffracted light from the pattern. An inspection apparatus and method for improving detection sensitivity and throughput by setting a threshold value according to signal variation due to the above are disclosed.

また、特許文献２には、予め計測するかシミュレーションにより算出した温度と合焦点位置オフセットの関係を記憶する手段と、温度検出手段による温度検出結果に基づき温度と合焦点位置オフセットとの上記関係から合焦点位置オフセットを予測する手段と、この手段による予測量に基づき合焦点位置オフセットを修正する手段とを備えた検査装置が開示されている。   Further, in Patent Document 2, from the above relationship between the temperature and the in-focus position offset based on the temperature detection result by the temperature detecting means and the means for storing the relationship between the temperature measured in advance or calculated by the simulation and the temperature detection result by the temperature detecting means An inspection apparatus including means for predicting a focal position offset and means for correcting the focal position offset based on a prediction amount by the means is disclosed.

特開２０００−１０５２０３号公報JP 2000-105203 A 特開２００２−０９０３１１号公報JP 2002-090311 A

しかしながら、従来技術においては、温度に対する実変動量と合焦点位置オフセット予測量との関係が一意でない場合には配慮がされていなかった。例えば、欠陥検査装置に使用されている部材ではそれぞれの温度変化に対する応答速度や変動量が異なることは明らかであり、その総合的な結果である変動量は温度変化の経過時間によって変わってくる。   However, in the prior art, no consideration has been given when the relationship between the actual fluctuation amount with respect to the temperature and the predicted focal position offset amount is not unique. For example, it is clear that the response speed and fluctuation amount with respect to each temperature change are different among members used in the defect inspection apparatus, and the fluctuation amount as a comprehensive result varies depending on the elapsed time of the temperature change.

温度変化後の経過時間が微小である場合や、十分である場合とあっても、総合的な結果である変動量と予測量との差が検査光学系の焦点深度内に収まっていれば、検査装置の感度低下はわずかである。   Even if the elapsed time after the temperature change is small or sufficient, if the difference between the fluctuation amount and the predicted amount as a comprehensive result is within the depth of focus of the inspection optical system, The sensitivity reduction of the inspection device is slight.

しかし、総合的な結果である変動量が予測量を加味した検査光学系の焦点深度より大きい場合や、現時点で小さくても今後の検査装置の技術革新によりｚ=±λ／２ＮＡ２で与えられる焦点深度が小さくなる場合には、温度変化に対する装置の検査感度低下は無視できないものになる。このような検査感度低下を防ぐためには、総合的な結果である変動量を抑えていく必要がある。 However, if the fluctuation amount as a comprehensive result is larger than the depth of focus of the inspection optical system taking into account the predicted amount, or even if it is small at the present time, it is given by z = ± λ / 2NA 2 due to technological innovation of the future inspection apparatus When the depth of focus becomes small, a decrease in the inspection sensitivity of the apparatus with respect to a temperature change cannot be ignored. In order to prevent such a decrease in inspection sensitivity, it is necessary to suppress the fluctuation amount as a comprehensive result.

温度変化による変動量を抑える手段には低熱膨張材の使用が考えられ、温度変化を抑える手段には温度制御が考えられる。しかし、前者は検査装置の重量を大きく増加させ、装置製造ラインや半導体ラインへの負担が増えるという課題がある。後者に関しては、例えば、温度制御技術が、ウエハの高精度な重ね合わせ位置精度と結像性能を保つために開発されている。   Use of a low thermal expansion material can be considered as a means for suppressing the fluctuation amount due to temperature change, and temperature control can be considered as a means for suppressing temperature change. However, the former has a problem that the weight of the inspection apparatus is greatly increased, and the burden on the apparatus manufacturing line and the semiconductor line is increased. With regard to the latter, for example, a temperature control technique has been developed in order to maintain high-precision overlay position accuracy and imaging performance of the wafer.

具体的には、露光装置全体を温調チャンバで覆い、測長光路空間、ステージや各種構造支持体、レンズやその構造支持体を個別チャンバにて温度制御するものである。   Specifically, the entire exposure apparatus is covered with a temperature control chamber, and the temperature measurement optical path space, stage, various structural supports, lenses and their structural supports are temperature-controlled in individual chambers.

しかしながら、対象物の要求位置精度の違い、光学構成の違い、さらに熱源の違いにより、上記温度制御技術をそのまま欠陥検査装置に適用するのは困難である。例えば、検査装置全体を覆うような温調チャンバを使用することは、装置の大型化を伴い、フットプリント拡大につながるため、装置製造ラインや半導体ラインへの負担を増やしてしまう。そのため、検査装置の大型化を伴うことなく、効率的に温度制御が可能な技術が必要である。   However, it is difficult to apply the temperature control technique as it is to the defect inspection apparatus because of the difference in the required position accuracy of the object, the difference in the optical configuration, and the difference in the heat source. For example, use of a temperature control chamber that covers the entire inspection apparatus leads to an increase in the size of the apparatus and an increase in footprint, which increases the burden on the apparatus manufacturing line and the semiconductor line. Therefore, a technique capable of efficiently controlling the temperature without increasing the size of the inspection apparatus is required.

本発明の目的は、大型化を伴うことなく、効率的に温度制御が可能な欠陥検査装置及び検査方法を実現することである。   An object of the present invention is to realize a defect inspection apparatus and inspection method capable of efficiently controlling temperature without increasing the size.

本発明は、光を被検査物に照射し、反射した光または散乱した光を検出して、被検査物の欠陥を検査する欠陥検査装置および検査方法において、上記欠陥検査装置の複数の部品のうち、温度制御すべき複数の部品を選択して、温度制御部品収容部に収容し、この温度制御部品収容部内の温度を測定して、温調部により、温度制御部品収容部内が所定温度となるように温度制御する。   The present invention provides a defect inspection apparatus and inspection method for inspecting a defect of an inspection object by irradiating the inspection object with light, detecting reflected light or scattered light, and a plurality of components of the defect inspection apparatus. Among them, a plurality of components to be temperature controlled are selected and accommodated in the temperature control component accommodating portion, the temperature in the temperature control component accommodating portion is measured, and the temperature control portion causes the temperature control component accommodating portion to reach a predetermined temperature. Control the temperature so that

本発明によれば、大型化を伴うことなく、効率的に温度制御が可能な欠陥検査装置及び検査方法を実現することができる。   According to the present invention, it is possible to realize a defect inspection apparatus and inspection method capable of efficiently controlling temperature without increasing the size.

以下、本発明の実施形態について、添付図面を参照して説明する。
（第１の実施形態）
本発明の第１の実施形態である欠陥検査装置について、図１〜図７を参照して説明する。なお、以下の実施形態においては、欠陥検査装置として、表面異物検査装置を例として説明する。 Embodiments of the present invention will be described below with reference to the accompanying drawings.
(First embodiment)
A defect inspection apparatus according to a first embodiment of the present invention will be described with reference to FIGS. In the following embodiments, a surface foreign matter inspection apparatus will be described as an example of the defect inspection apparatus.

本発明の第１の実施形態は、温度制御によって結像位置変動を抑えて検査感度の安定性を確保でき、従来は結像位置変動による検査感度を校正するために必要とされた装置製造ラインや半導体ラインでの装置停止回数を低減でき、装置内配置の工夫によって装置価格およびフットプリントを小さくしつつ効率的な熱交換を実現でき、温調エアにクリーンエアの役割を持たせてＦＦＵ（ファンフィルタユニット）を不要としている。   According to the first embodiment of the present invention, the stability of inspection sensitivity can be ensured by suppressing the fluctuation of the imaging position by temperature control, and the apparatus manufacturing line conventionally required for calibrating the inspection sensitivity due to the fluctuation of the imaging position. In addition, the number of times of equipment stoppage in the semiconductor line can be reduced, and the heat can be efficiently exchanged while reducing the equipment price and footprint by devising the arrangement in the equipment. Fan filter unit) is not required.

図１は、本発明が適用される欠陥検査装置の全体構成図である。図１において、第１の実施形態である欠陥検査装置は、ステージ部３００と、照明光学系１００と、少なくとも一組の検査光学系２００と、制御系４００と、温度制御システム６００（図２に示す）とを備える。   FIG. 1 is an overall configuration diagram of a defect inspection apparatus to which the present invention is applied. 1, the defect inspection apparatus according to the first embodiment includes a stage unit 300, an illumination optical system 100, at least one set of inspection optical system 200, a control system 400, and a temperature control system 600 (see FIG. 2). Show).

ステージ部３００は、Ｘステージ３０１、Ｙステージ３０２、Ｚステージ３０３、角度ステージ３０４、ステージコントローラ３０５を備える。ウエハ１をステージ部３００に搬入した時には、角度ステージ３０４にて角度方向のアライメントを行い、Ｚステージ３０３にてＺ方向のアライメントを行う。   The stage unit 300 includes an X stage 301, a Y stage 302, a Z stage 303, an angle stage 304, and a stage controller 305. When the wafer 1 is loaded into the stage unit 300, the angle stage 304 is aligned in the angle direction, and the Z stage 303 is aligned in the Z direction.

ウエハ１のスキャン時には、Ｘステージ３０１にてＸ方向走査後にＹステージ３０２にてＹ方向に送り、Ｘステージ３０１にてＸ逆方向走査を行うというような繰り返し動作を行う。   When scanning the wafer 1, the X stage 301 is scanned in the X direction, the Y stage 302 is sent in the Y direction, and the X stage 301 is scanned in the X reverse direction.

照明光学系１００は、共通光路と１１方向（図５に示す）の照明１１０（第１照明手段）と、１２方向（図５に示す）の照明１２０（第２照明手段）と、１３方向（図５に示す）の照明１３０（第３照明手段）の複数の照明手段を備える。共通光路の部品としては、レーザ光源１０１と、ビームエキスパンダの役割を果たす凹レンズ１０２及び凸レンズ１０３と、ＮＤフィルタや波長板などの光学フィルタ群１０４と、光路を引き回すミラー１０５とを使用する。   The illumination optical system 100 includes a common optical path, illumination 110 (first illumination means) in 11 directions (shown in FIG. 5), illumination 120 (second illumination means) in 12 directions (shown in FIG. 5), and 13 directions (shown in FIG. 5). A plurality of illumination means of illumination 130 (third illumination means) shown in FIG. 5 is provided. As components of the common optical path, a laser light source 101, a concave lens 102 and a convex lens 103 that function as a beam expander, an optical filter group 104 such as an ND filter and a wave plate, and a mirror 105 that guides the optical path are used.

また、照明系１００は、各方向照明の部品として素通しのガラス板と切換可能な光学分岐要素（またはミラー）１０６と、照明レンズ１０７と、光路を鉛直方向に落とし込む落射ミラー１０８と、照射仰角を決定する仰角切替ミラー１０９とを備える。照明レンズ１０７を通過したビームは、図５に示すように、ウエハ１上で１１、１２、１３の３方向からスリット状ビーム３として、その短手方向がチップ２の配列方向に向くように照明される。   The illumination system 100 also includes an optical branching element (or mirror) 106 that can be switched to a transparent glass plate as a component of each direction illumination, an illumination lens 107, an epi-illumination mirror 108 that drops the optical path in the vertical direction, and an illumination elevation angle. And an elevation angle switching mirror 109 to be determined. As shown in FIG. 5, the beam that has passed through the illumination lens 107 is illuminated from the three directions 11, 12, and 13 on the wafer 1 as the slit-shaped beam 3 so that the short direction is directed to the arrangement direction of the chips 2. Is done.

欠陥検査の高速化を実現するために、スリット状ビーム３はＸステージ３０１の走査方向Ｘが短手方向、Ｙステージ３０２の走査方向Ｙが長手方向となるように照明する。すなわち、Ｙ方向の送り量を大きくすることでステージの総走査量を少なくすることが可能となる。レーザ光源１０１から照射されるビーム光束の照度（パワー）は光学フィルタ群１０４のＮＤフィルタなどを用いて制御が可能である。   In order to increase the speed of defect inspection, the slit beam 3 is illuminated so that the scanning direction X of the X stage 301 is the short direction and the scanning direction Y of the Y stage 302 is the long direction. That is, the total scanning amount of the stage can be reduced by increasing the feed amount in the Y direction. The illuminance (power) of the beam emitted from the laser light source 101 can be controlled using an ND filter of the optical filter group 104 or the like.

検査光学系２００は、対物レンズ２０１と、フーリエ変換面２０２（空間フィルタ制御部２０７により制御される）と、結像レンズ２０３と、変倍レンズ群２０４（レンズ駆動制御部２０８により制御される）と、ＴＤＩセンサ等の検出器２０５とを備える。検査光学系２００では、まず、スリット状照明３をウエハ１に照射して発生する反射光や散乱光を対物レンズ２０１で集光する。次に、ウエハ１の繰り返しパターンによってフーリエ変換面２０２に現れる回折光の干渉部分を空間フィルタ（図示せず）で遮光する。空間フィルタの透過光を変倍レンズ２０４で倍率調整する。   The inspection optical system 200 includes an objective lens 201, a Fourier transform surface 202 (controlled by a spatial filter control unit 207), an imaging lens 203, and a variable power lens group 204 (controlled by a lens drive control unit 208). And a detector 205 such as a TDI sensor. In the inspection optical system 200, first, reflected light and scattered light generated by irradiating the wafer 1 with the slit illumination 3 are collected by the objective lens 201. Next, the interference part of the diffracted light that appears on the Fourier transform surface 202 due to the repetitive pattern of the wafer 1 is shielded by a spatial filter (not shown). The magnification of the light transmitted through the spatial filter is adjusted by the zoom lens 204.

最終的に、結像レンズ２０３で検出器２０５に結像させる。ウエハ１上の検出視野２０９（図４に示す）と検出領域４（図４に示す）を同時に満たす領域が検出器２０５のセンサ上に結像される。   Finally, the imaging lens 203 forms an image on the detector 205. An area that simultaneously satisfies the detection field of view 209 (shown in FIG. 4) and the detection area 4 (shown in FIG. 4) on the wafer 1 is imaged on the sensor of the detector 205.

様々な形態の回路パターンが形成されたウエハ１にスリット状ビーム３を照明すると、ウエハ１表面の回路パターンや異物等の欠陥から反射光や散乱光が射出する。回路パターンによって発生した反射光や散乱光は、空間フィルタで遮光され、ここを透過した光が検出器２０５に結像し光電変換される。   When the slit-shaped beam 3 is illuminated on the wafer 1 on which various types of circuit patterns are formed, reflected light and scattered light are emitted from defects such as circuit patterns and foreign matters on the surface of the wafer 1. Reflected light and scattered light generated by the circuit pattern are shielded by the spatial filter, and the light transmitted therethrough forms an image on the detector 205 and undergoes photoelectric conversion.

制御系４００は、駆動機構やセンサを制御する駆動制御系４０１と、画像処理系４０２と、表示系４０３と、入力系４０４とを備える。画像処理系４０２は、検出器２０５で光電変換されたデータのＡ／Ｄ変換部、データメモリ、チップ２間の信号の差をとる差分処理回路、チップ２間の差信号を一時記憶するメモリ、パターン閾値を設定する閾値算出処理部、比較回路、異物等の欠陥検出結果を記憶および出力する検査結果記憶系を備えている。   The control system 400 includes a drive control system 401 that controls drive mechanisms and sensors, an image processing system 402, a display system 403, and an input system 404. The image processing system 402 includes an A / D converter for data photoelectrically converted by the detector 205, a data memory, a difference processing circuit that takes a signal difference between chips 2, a memory that temporarily stores a difference signal between chips 2, A threshold value calculation processing unit for setting a pattern threshold value, a comparison circuit, and an inspection result storage system for storing and outputting defect detection results such as foreign matter are provided.

更に、本発明の第１の実施形態に関わるユニットとして、図６に示すように、対物レンズ２０１、検査光学系２００とは光路を別にしたオートフォーカス系２１０、検査光学系２００やオートフォーカス系２１０や照明光学系１００を搭載する光学定盤５０２と、この光学定盤５０２とステージ部３００とを搭載する石定盤５０１と、温度制御システム６００（図２に示す）がある。   Further, as a unit related to the first embodiment of the present invention, as shown in FIG. 6, an autofocus system 210, an inspection optical system 200, and an autofocus system 210 that are separated from the objective lens 201 and the inspection optical system 200. And an optical surface plate 502 on which the illumination optical system 100 is mounted, a stone surface plate 501 on which the optical surface plate 502 and the stage unit 300 are mounted, and a temperature control system 600 (shown in FIG. 2).

図２は、本発明の第１の実施形態の原理説明図である。図２に示すように、温度制御システム６００は、温調器６０１と、温度測定器６０３（第１の温度測定手段）と、装置本体に温調気流を送る往路配管６１１及び復路配管６１２と、温度制御部品収容部６０４とを備える。温度制御部品収容部６０４は石定盤５０１の下端からセンサＺ駆動機構２０６の下端までの空間を指し、その空間内に検査光学系２００とオートフォーカス系２１０が配置される。   FIG. 2 is a diagram illustrating the principle of the first embodiment of the present invention. As shown in FIG. 2, the temperature control system 600 includes a temperature controller 601, a temperature measuring device 603 (first temperature measuring means), an outgoing pipe 611 and a return pipe 612 that send a temperature-controlled airflow to the apparatus main body, And a temperature control component housing portion 604. The temperature control component housing portion 604 indicates a space from the lower end of the stone surface plate 501 to the lower end of the sensor Z drive mechanism 206, and the inspection optical system 200 and the autofocus system 210 are disposed in the space.

温度制御部品収容部６０４には、欠陥検査装置の複数の部品のうち、温度制御すべき複数の部品が収容され、放熱部６０５には、温度制御不要な部品が収容されている。   The temperature control component storage unit 604 stores a plurality of components to be temperature controlled among the plurality of components of the defect inspection apparatus, and the heat dissipation unit 605 stores components that do not require temperature control.

つまり、欠陥検査装置の構成部品のうち、温度制御すべき部品と、温度制御不要の部品とに区別し、温度制御すべき部品を一括して一定温度に維持するように構成している。   That is, among the component parts of the defect inspection apparatus, a part to be temperature controlled is distinguished from a part that does not require temperature control, and the parts to be temperature controlled are collectively maintained at a constant temperature.

図２に示す放熱部６０５には、少なくとも検出器２０５のような熱源となるものを収容し、ステージ系３００の駆動部（図示せず）やレーザ光源１０１や制御系４００などの熱源となるものを含めてもよい。   The heat radiation unit 605 shown in FIG. 2 accommodates at least a heat source such as the detector 205, and serves as a heat source for the drive unit (not shown) of the stage system 300, the laser light source 101, the control system 400, and the like. May be included.

温度変動によって結像位置ずれが生じる原因は、光路上の屈折率変化による第一の焦点距離変動、対物レンズ２０１の鏡筒変形による第二の焦点距離変動、光学定盤５０２や石定盤５０１の変形およびそれらに搭載されるオートフォーカスユニット２１０や対物レンズ２０１の位置変動による第三の焦点距離変動である。   The cause of the image position shift due to temperature variation is the first focal length variation due to the refractive index variation on the optical path, the second focal length variation due to the lens barrel deformation of the objective lens 201, the optical surface plate 502 and the stone surface plate 501. And the third focal length variation due to the positional variation of the autofocus unit 210 and the objective lens 201 mounted thereon.

特に、第三の焦点距離変動は、その原因部品が熱時定数の異なる複数の部材から構成されているために、温度変化の始点と終点およびその継続時間によって変わっていくものである。   In particular, the third focal length variation changes depending on the start and end points of the temperature change and its duration because the cause component is composed of a plurality of members having different thermal time constants.

したがって、本発明が適用されない場合は、変動量の予測や補正が困難であり、検査感度の不安定性を回避するために定期的な校正が求められ、その都度、装置製造ラインや半導体ラインでの装置停止が余儀なくされる。   Therefore, when the present invention is not applied, it is difficult to predict and correct the amount of fluctuation, and periodic calibration is required to avoid instability of inspection sensitivity. The device is forced to stop.

本発明の第１の実施形態は、結像位置ずれに関係する部品（対物レンズ２０１、オートフォーカスユニット２１０、石定盤５０１、光学定盤５０２）の温度を一定に保つことで、つまり、これら部品（対物レンズ２０１、オートフォーカスユニット２１０、石定盤５０１、光学定盤５０２）を温度制御部品収容部６０４内に収容し、一定温度となるように制御することにより、予測困難な焦点距離変動（結像位置変動）をなくし、検査感度の安定性を向上することができる。   In the first embodiment of the present invention, the temperature of the components (objective lens 201, autofocus unit 210, stone surface plate 501, optical surface plate 502) related to image formation position deviation is kept constant. The components (objective lens 201, autofocus unit 210, stone surface plate 501, optical surface plate 502) are housed in the temperature control component housing portion 604 and controlled so as to have a constant temperature, thereby making it difficult to predict the focal length variation. It is possible to eliminate (imaging position fluctuation) and improve the stability of inspection sensitivity.

また、図７に示すように、装置温度の制御範囲を例えば、２３度近辺とすれば、検査感度が安定するため、装置製造ラインや半導体ラインにおいて検査感度校正に必要とされていた装置停止の回数を低減することができる。   In addition, as shown in FIG. 7, if the control range of the apparatus temperature is, for example, around 23 degrees, the inspection sensitivity becomes stable. Therefore, the apparatus stoppage required for the inspection sensitivity calibration in the apparatus manufacturing line or the semiconductor line is stopped. The number of times can be reduced.

また、本発明の第１の実施形態は、図２、図６に示すように、温調したクリーンエアを温度制御部品収容部６０４（断熱材により、周囲空間からの熱の流入流出が抑制される）に流入させることで、ＦＦＵ（ファンフィルタユニット）を設置しないで欠陥検査装置内のクリーン度を確保するものである。装置内に発生した塵は、クリーンエアの気流６１３に沿って流れ、クリーンフィルタ６１４（図６に示す）を用いて効率的に除塵される。欠陥検査装置内部を清浄に保つ上で、このクリーンエアがダウンフローとなるように、温度制御部品収容部６０４と、温調器６０１を循環させることが望ましい。   Further, in the first embodiment of the present invention, as shown in FIG. 2 and FIG. 6, the temperature-controlled clean air is supplied to the temperature control component housing portion 604 (the heat insulating material suppresses the inflow and outflow of heat from the surrounding space. In this case, the cleanliness of the defect inspection apparatus is ensured without installing an FFU (fan filter unit). Dust generated in the apparatus flows along a clean air stream 613 and is efficiently removed using a clean filter 614 (shown in FIG. 6). In order to keep the inside of the defect inspection apparatus clean, it is desirable to circulate the temperature control component accommodating portion 604 and the temperature controller 601 so that this clean air becomes a downflow.

クリーンフィルタ６１４は、往路配管６１１の途中かつ温度制御部品収容部６０４の直前に設置することが望ましい。他の場所に設置した場合に比べてクリーン度を最も確保できるからである。なお、クリーンエアは一方向にフローさせる必要があるため、温度制御部品収容部６０４内での気流を循環させることができない。そのため、気流６１３に沿って温度制御部品収容部６０４内部にわずかな温度勾配が発生することになる。ここで、重要なことは温度制御部品収容部６０４内の温度均一性ではなく、各温度制御対象周辺の温度が安定していることである。この各温度制御対象周辺の温度勾配を含めた温度状態を安定させることにより、検査感度の安定性を向上することができる。   It is desirable that the clean filter 614 be installed in the middle of the forward piping 611 and immediately before the temperature control component housing portion 604. This is because the cleanliness can be secured most as compared with the case where it is installed in another place. In addition, since clean air needs to flow in one direction, the air flow in the temperature control component housing portion 604 cannot be circulated. Therefore, a slight temperature gradient is generated inside the temperature control component housing portion 604 along the airflow 613. Here, what is important is not the temperature uniformity in the temperature control component housing portion 604 but the temperature around each temperature control object is stable. The stability of the inspection sensitivity can be improved by stabilizing the temperature state including the temperature gradient around each temperature control target.

図３は、本発明の第１の実施形態における温度制御の動作フローチャートである。図３において、ステップ１０００で電源がオンとなると、温度制御システム６００は、ステップ１００１で温調媒体を初期温度ｔ０に設定し、温度制御空間６０４に流入させる。 FIG. 3 is an operational flowchart of temperature control in the first embodiment of the present invention. In FIG. 3, when the power is turned on in step 1000, the temperature control system 600 sets the temperature adjustment medium to the initial temperature t 0 in step 1001 and flows it into the temperature control space 604.

そして、ステップ１００２において、温度制御空間６０４内の温度ｔは、温度測定器６０３によって常時モニタリングされ、取得した温度データは、通信ケーブル経由で温調器の制御ＣＰＵ部６０２に読み込まれる。温度制御空間６０４内の温度を一定に保つために、温調器６０１の制御ＣＰＵ部６０２は、温度変化を検知して事前に設定した温度範囲からの偏差をなくするようにエアの温度を制御する。温調器６０１の起動時には、温調器の制御ＣＰＵは予め設定してある初期温度のエアを流し始め、温度測定器６０３からのフィードバックと照らし合わせながらエアの温度を調整する。   In step 1002, the temperature t in the temperature control space 604 is constantly monitored by the temperature measuring device 603, and the acquired temperature data is read into the control CPU unit 602 of the temperature controller via the communication cable. In order to keep the temperature in the temperature control space 604 constant, the control CPU unit 602 of the temperature controller 601 detects the temperature change and controls the temperature of the air so as to eliminate the deviation from the preset temperature range. To do. When the temperature controller 601 is activated, the control CPU of the temperature controller starts to flow air at an initial temperature set in advance, and adjusts the temperature of the air while comparing with the feedback from the temperature measuring device 603.

つまり、ステップ１００３において、制御ＣＰＵ部６０２は、測定温度ｔが所定温度範囲内（ｔ０＋Δｔ０未満でｔ０−Δｔ０を超える）か否かを判定し、所定温度範囲内であれば、ステップ１００４に進み、温度媒体の温度を温調媒体の温度をｔ０＋Δｔ１に設定し、ステップ１００２に戻る。 That is, in step 1003, the control CPU 602, the measured temperature t is determined whether within a predetermined temperature range (t exceeds t 0 -.DELTA.t 0 below 0 + Δt 0), if it is within the predetermined temperature range, Proceeding to step 1004, the temperature of the temperature medium is set to t 0 + Δt 1 , and the process returns to step 1002.

ステップ１００３で、測定温度ｔが所定温度範囲内でなければ、ステップ１００５に進み、ｔ０＋（ｔ０−ｔ）は温調器６０１の制御温度範囲内か否かを判定する。温調器６０１の制御温度範囲内であれば、ステップ１００６に進み、温調媒体の温度をｔ０＋（ｔ０−ｔ）に設定し、ステップ１００２に戻る。 In step 1003, if the measured temperature t is not within the predetermined temperature range, the process proceeds to step 1005, where it is determined whether t 0 + (t 0 −t) is within the control temperature range of the temperature controller 601. If it is within the control temperature range of the temperature controller 601, the process proceeds to step 1006, the temperature of the temperature control medium is set to t 0 + (t 0 −t), and the process returns to step 1002.

ステップ１００５で、温調器６０１の制御温度範囲外であれば、ステップ１００７に進み、温調媒体の温度をｔ０＋（ｔ０−ｔ）より低い制御温度限界値に設定し、ステップ１００２に戻る。 If it is outside the control temperature range of the temperature controller 601 in step 1005, the process proceeds to step 1007, and the temperature of the temperature control medium is set to a control temperature limit value lower than t 0 + (t 0 −t). Return.

なお、温度勾配は、理想的には、往路６１１でｔ０＋Δｔ１、温度測定器６０３でｔ０、復路６１２でｔ０＋ｔ２となる。 The temperature gradient is ideally, t 0 + Δt 1 the forward path 611, t 0 at a temperature meter 603, and t 0 + t 2 in backward 612.

上述したように、エアは気流６１３に沿った温度勾配を持つ。そのため、温度測定器６０３から気流６１３に沿った物理的距離が離れるほど温度安定性が低下する。従って、温度測定器６０３はそれぞれの温度制御対象付近、例えば、接地するように配置することが望ましい。さらに、各温度制御対象の温度変動に対する応答変位量や応答速度といった温度特性を加味するとよい。   As described above, air has a temperature gradient along the airflow 613. Therefore, the temperature stability decreases as the physical distance along the air flow 613 increases from the temperature measuring device 603. Therefore, it is desirable that the temperature measuring device 603 is arranged in the vicinity of each temperature control target, for example, to be grounded. Furthermore, it is preferable to consider temperature characteristics such as a response displacement amount and a response speed with respect to a temperature variation of each temperature control target.

第１の実施形態では石定盤５０１、光学定盤５０２、その他（オートフォーカスユニット２１０と対物レンズ２０１）の順に温度に対する変動量が大きく、かつ応答速度が遅い。応答速度が速いほど温度不安定性に追従し、応答速度が遅いほど平均化された温度不安定性の結果が変動量として現れるために影響が小さい。   In the first embodiment, the amount of variation with respect to temperature increases in the order of the stone surface plate 501, the optical surface plate 502, and the others (the autofocus unit 210 and the objective lens 201), and the response speed is slow. The faster the response speed, the more the temperature instability is followed, and the slower the response speed, the smaller the effect because the averaged temperature instability result appears as a fluctuation amount.

このため、第１の実施形態では、温度測定器６０３の配置位置を、対物レンズ２０１からの距離とオートフォーカスユニット２１０からの距離の和が最小になるような実装可能な位置とした。   For this reason, in the first embodiment, the arrangement position of the temperature measuring device 603 is set to a mountable position such that the sum of the distance from the objective lens 201 and the distance from the autofocus unit 210 is minimized.

以上のように、本発明の第１の実施形態においては、欠陥検査装置の構成部品のうち、温度制御すべき部品と、温度制御不要の部品とに区別し、温度制御すべき部品を一括して温度制御部品収容部６０４に収容し、一定温度に維持するように構成している。   As described above, in the first embodiment of the present invention, among the component parts of the defect inspection apparatus, a part to be temperature controlled is distinguished from a part to be temperature controlled, and the parts to be temperature controlled are grouped. The temperature control component storage portion 604 is housed and maintained at a constant temperature.

したがって、個々の部品を加熱又は冷却して、温度制御する場合に比較して、一定温度に維持することが容易であり、省エネルギー効果を得ることができる。   Accordingly, it is easier to maintain a constant temperature than when heating or cooling individual parts and controlling the temperature, and an energy saving effect can be obtained.

また、個々の部品を加熱又は冷却して、温度制御する場合に比較して、一括して温度制御を行なえばよいので、必要な温度検知素子が少なく、温度制御も簡単である。   Further, compared to the case where the temperature control is performed by heating or cooling individual components, the temperature control is performed in a lump, so that fewer temperature detection elements are required and the temperature control is simple.

さらに、欠陥検査装置全体を覆う必要は無いので、大型化を伴うことも無い。   Furthermore, since there is no need to cover the entire defect inspection apparatus, there is no increase in size.

本発明の第１の実施形態のように、温度制御すべき部品を一括して温度制御行うことで、装置全体を温調チャンバで覆うのに比べてフットプリントを１０〜２０％程度低減させることが可能になる。   As in the first embodiment of the present invention, the footprint is reduced by about 10 to 20% compared to the case where the entire apparatus is covered with the temperature control chamber by collectively controlling the temperature of components to be temperature controlled. Is possible.

なお、温度制御すべき部品を一括して断熱材により、周囲環境から熱的に隔離するように構成してもよい。   In addition, you may comprise so that the components which should be temperature controlled may be thermally isolated from surrounding environment collectively with a heat insulating material.

（第２の実施形態）
本発明の第２の実施形態について、図８を用いて説明する。
本発明の第２の実施形態は、温度制御媒体に液体を用いること、装置高さを抑えてＦＦＵを搭載することが可能なこと、照明光学系１００と検査光学系２００の気流による光路揺らぎがないため検査感度が向上することを特徴とする。 (Second Embodiment)
A second embodiment of the present invention will be described with reference to FIG.
In the second embodiment of the present invention, liquid is used as the temperature control medium, the FFU can be mounted while suppressing the height of the apparatus, and the optical path fluctuation due to the airflow of the illumination optical system 100 and the inspection optical system 200 is reduced. This is characterized by improved inspection sensitivity.

なお、基本構成は第１の実施形態と同じ、つまり、欠陥検査装置の構成部品のうち、温度制御すべき部品と、温度制御不要の部品とに区別し、温度制御すべき部品を一括して一定温度に維持するように構成している。   The basic configuration is the same as that of the first embodiment, that is, among the components of the defect inspection apparatus, the components to be temperature controlled are distinguished from the components not requiring temperature control, and the components to be temperature controlled are collectively displayed. It is configured to maintain a constant temperature.

このため、同一の部分には同一の符号を付し、第２の実施形態については、第１の実施形態と異なる部分に関して説明する。   For this reason, the same code | symbol is attached | subjected to the same part and 2nd Embodiment demonstrates regarding a different part from 1st Embodiment.

図８において、光学定盤５０２には、照明光学系１００と、少なくとも一組の検査光学系２００と、オートフォーカスユニット２１０と、第２の光学定盤５０３とが搭載される。なお、石定盤５０１等は架台５００により支持されるが、図示の簡略化のため、石定盤５０１から光学定盤５０２を支える支柱は省略した。   In FIG. 8, an illumination optical system 100, at least one set of inspection optical system 200, an autofocus unit 210, and a second optical surface plate 503 are mounted on the optical surface plate 502. Note that the stone surface plate 501 and the like are supported by the gantry 500, but for the simplification of the drawing, the support supporting the optical surface plate 502 from the stone surface plate 501 is omitted.

第２の光学定盤５０３には、センサＺ駆動機構２０６と、検出器２０５とが搭載される。温度制御部品収容部６０４は、光学定盤５０２の下端から第２の光学定盤５０３の上端までを含む。また、広い意味で石定盤５０１も温度制御部品収容部６０４に含むことができる。その他の部材は放熱部６０５に含む。   A sensor Z drive mechanism 206 and a detector 205 are mounted on the second optical surface plate 503. The temperature control component housing portion 604 includes from the lower end of the optical surface plate 502 to the upper end of the second optical surface plate 503. Moreover, the stone surface plate 501 can also be included in the temperature control component accommodating part 604 in a broad sense. Other members are included in the heat radiating portion 605.

温度制御部品収容部６０４内のモニタリングは、温度測定器６０３が行う。取得した温度データは、通信ケーブル経由で温調器６０１の制御ＣＰＵ部６０２に読み込まれる。装置内温度を一定に保つために、温調器６０１の制御ＣＰＵ部６０２は、温度変化を検知して事前に設定した温度範囲からの偏差を無くすように温調液体の温度を制御する。この液体は、流路６１３に沿って温調器６０１から、往路６１１、温度制御部品収容部６０４、復路６１２を通って、温度調器６０１に循環している。   Monitoring in the temperature control component housing 604 is performed by the temperature measuring device 603. The acquired temperature data is read into the control CPU unit 602 of the temperature controller 601 via a communication cable. In order to keep the temperature in the apparatus constant, the control CPU 602 of the temperature controller 601 detects the temperature change and controls the temperature of the temperature adjustment liquid so as to eliminate the deviation from the preset temperature range. The liquid circulates from the temperature controller 601 along the flow path 613 to the temperature controller 601 through the forward path 611, the temperature control component housing 604, and the return path 612.

このような温度制御に用いる液体には、例えば、純水やフッ素系不活性液体やＨＦＥ（ハイドロフルオロエーテル）やエチレングリコールなど、流路６１３に沿った部材を腐食しないものを使用することが望ましい。温調液体が直接的に温度制御を行うのは、石定盤５０１と、光学定盤５０２と、第２の光学定盤５０３とである。直接温度制御された定盤が間接的な温調器として働いて温度制御部品収容部６０４の温度制御を行う。   As the liquid used for such temperature control, it is desirable to use a liquid that does not corrode members along the flow path 613, such as pure water, fluorine-based inert liquid, HFE (hydrofluoroether), or ethylene glycol. . It is the stone surface plate 501, the optical surface plate 502, and the second optical surface plate 503 that the temperature control liquid directly controls the temperature. The surface plate whose temperature is directly controlled functions as an indirect temperature controller, and controls the temperature of the temperature control component housing 604.

図８に示した例では、一組の温度測定器６０３と温調器６０１が温度制御を行っている。この場合、温度測定器６０３の設置箇所は後述するような工夫を行うことが望ましい。複数組の温調器６０１と、温調器の制御ＣＰＵ部６０２と、温度測定器６０３とを用意し、石定盤５０１、光学定盤５０２、第２の光学定盤５０３を各々独自に温度制御してもよい。このとき、各定盤における流路６１３の中央付近に温度測定器６０３を設置することが望ましい。   In the example shown in FIG. 8, a set of temperature measuring device 603 and temperature controller 601 performs temperature control. In this case, it is desirable to devise the installation place of the temperature measuring device 603 as described later. A plurality of sets of temperature controllers 601, a temperature controller control CPU unit 602, and a temperature measuring device 603 are prepared, and the stone surface plate 501, the optical surface plate 502, and the second optical surface plate 503 are each independently heated. You may control. At this time, it is desirable to install the temperature measuring device 603 near the center of the flow path 613 in each surface plate.

本発明の第２の実施形態における温調液体は、第１の実施形態で適用したクリーンエアの機能は持たない。そこで、石定盤５０１と光学定盤５０２との間の気流６１６に沿ったクリーンエアがウエハ１面付近の塵を装置外に排出するように、ＦＦＵ６１５を設置することが望ましい。   The temperature control liquid in the second embodiment of the present invention does not have the function of clean air applied in the first embodiment. Therefore, it is desirable to install the FFU 615 so that clean air along the airflow 616 between the stone surface plate 501 and the optical surface plate 502 discharges dust near the wafer 1 surface to the outside of the apparatus.

クリーンエアのフロー方向をダウンフローでなく気流６１６の方向（図８の左から右方向）とすれば、装置横にＦＦＵ６１５を設置してよく、装置高さを抑えることができる。   If the flow direction of the clean air is not the down flow but the direction of the air flow 616 (from the left to the right in FIG. 8), the FFU 615 may be installed beside the apparatus, and the apparatus height can be suppressed.

本発明の第２の実施形態によれば、第１の実施形態と同様に、個々の部品を加熱又は冷却して、温度制御する場合に比較して、一定温度に維持することが容易であり、省エネルギー効果を得ることができる。   According to the second embodiment of the present invention, similarly to the first embodiment, it is easy to maintain or maintain a constant temperature as compared with the case of controlling the temperature by heating or cooling individual components. The energy saving effect can be obtained.

また、本発明の第２の実施形態によれば、温度制御部品収容部６０４に気流が存在しないため、照明光学系１００および検査光学系２００の光路揺らぎを著しく低減することができ、感度安定性が向上する。   Further, according to the second embodiment of the present invention, since there is no airflow in the temperature control component housing portion 604, the optical path fluctuations of the illumination optical system 100 and the inspection optical system 200 can be remarkably reduced, and the sensitivity stability. Will improve.

なお、本発明の第２の実施形態における温度測定器６０３の配置位置は、光学定盤５０２内で対物レンズ２０１からの距離とオートフォーカスユニット２１０からの距離との和が最小になる位置が望ましい。温度測定器６０３を、第１の実施形態と同じ位置に設置すると外気温を測定してしまうからである。   Note that the position of the temperature measuring device 603 in the second embodiment of the present invention is preferably a position in the optical surface plate 502 where the sum of the distance from the objective lens 201 and the distance from the autofocus unit 210 is minimized. . This is because if the temperature measuring device 603 is installed at the same position as in the first embodiment, the outside air temperature is measured.

また、図８において、対物レンズ２０１とオートフォーカスユニット２１０の一部が気流６１６に触れることになるが、各々先端のみであり内部熱伝導によって大部分は温度制御が達成される。   In FIG. 8, a part of the objective lens 201 and the autofocus unit 210 is in contact with the air flow 616, but only at the tip, and temperature control is mostly achieved by internal heat conduction.

本発明の第２の実施形態では、間接的な温度制御を行うために、温度制御される温度制御部品収容部６０４内の温度が第１の実施形態に比べて安定しているが、温度制御部品収容部６０４内の温度は、温調器６０１の温度制御に対して応答速度が遅い。そのため、側壁を介して外気の温度変動が温度制御部品収容部６０４に影響を与える可能性が大きい。   In the second embodiment of the present invention, in order to perform indirect temperature control, the temperature in the temperature control component housing portion 604 to be temperature controlled is more stable than in the first embodiment. The response speed of the temperature in the component housing portion 604 is slow with respect to the temperature control of the temperature controller 601. For this reason, there is a high possibility that the temperature variation of the outside air will affect the temperature control component housing portion 604 through the side wall.

このような理由から、温度制御部品収容部６０４の側壁には断熱材を適用するのが望ましい。また、流路の設置箇所は第２の光学定盤５０３において流路６１３を上面付近とすることが望ましい。その理由は、外気および検出器２０５の温度変動の影響を受けて第２の光学定盤５０３内に生じる温度勾配を防ぐためである。   For this reason, it is desirable to apply a heat insulating material to the side wall of the temperature control component housing portion 604. Further, it is desirable that the flow path 613 is located near the upper surface of the second optical surface plate 503 as the installation location of the flow path. The reason is to prevent a temperature gradient generated in the second optical surface plate 503 due to the influence of outside air and temperature fluctuations of the detector 205.

同様の理由から、第１の光学定盤５０２における流路６１３は下面付近に、石定盤５０１においては極力上下面付近に設置する。ここでは、各定盤に穴を開けて設ける流路について述べているが、穴を開ける代わりに各定盤に温度制御されたシートを貼り付けて温度制御を行ってもよい。なお、穴を開けた定盤とシートを貼り付けた定盤との両者を設けることもできる。   For the same reason, the flow path 613 in the first optical surface plate 502 is installed near the lower surface, and the stone surface plate 501 is installed as close as possible to the upper and lower surfaces. Here, although the flow path provided by making holes in each surface plate is described, temperature control may be performed by attaching a temperature-controlled sheet to each surface plate instead of making holes. It is also possible to provide both a surface plate with holes and a surface plate with sheets attached thereto.

（第３の実施形態）
本発明の第３の実施形態について、図９を用いて説明する。 (Third embodiment)
A third embodiment of the present invention will be described with reference to FIG.

本発明の第３の実施形態は、温調器６０１とは別に装置内外の熱源を利用して温度制御を行うもので、装置製造ラインや半導体ラインにおけるエネルギー面での負担軽減を特徴とする。   The third embodiment of the present invention performs temperature control using a heat source inside and outside the apparatus separately from the temperature controller 601, and is characterized by reducing energy burden on the apparatus manufacturing line and semiconductor line.

なお、基本構成は第１の実施形態と同じ、つまり、欠陥検査装置の構成部品のうち、温度制御すべき部品と、温度制御不要の部品とに区別し、温度制御すべき部品を一括して一定温度に維持するように構成している。   The basic configuration is the same as that of the first embodiment, that is, among the components of the defect inspection apparatus, the components to be temperature controlled are distinguished from the components not requiring temperature control, and the components to be temperature controlled are collectively displayed. It is configured to maintain a constant temperature.

このため、第３の実施形態については、第１の実施形態と異なる部分に関して説明する。   For this reason, about 3rd Embodiment, it demonstrates regarding a different part from 1st Embodiment.

図９において、温調器６０１は、放熱部６０５（第１放熱部）と配管を介して接続され、この配管には、断熱バルブ６１７ａが設けられている。また、温調器６０１は、装置外環境６１８（第２放熱部）と配管を介して接続され、この配管には、断熱バルブ６１７ｂが設けられている。   In FIG. 9, the temperature controller 601 is connected to the heat radiating portion 605 (first heat radiating portion) via a pipe, and a heat insulating valve 617a is provided in the pipe. The temperature controller 601 is connected to the outside environment 618 (second heat radiating portion) through a pipe, and a heat insulating valve 617b is provided in the pipe.

温調器６０１は、電力のみを用いて媒体の温度制御を行うのではなく、温調器６０１の制御ＣＰＵ部６０２にて断熱バルブ６１７ａ、６１７ｂを調整し、放熱部６０５や装置外環境温度の熱を利用して媒体の温度制御を行う。つまり、第２の温度測定手段により放熱部６０５の温度を測定し、第３の温度測定手段により装置外環境６１８の温度を測定し、温度制御部品収容部６０４の温度を一定温度に制御する場合、放熱部６０５及び装置外環境６１８のうちのいずれが熱交換するに適するか判断し、断熱バルブ６１７ａ、６１７ｂの開閉を制御して、熱交換媒体を循環させる。   The temperature controller 601 does not control the temperature of the medium by using only electric power, but adjusts the heat insulating valves 617a and 617b by the control CPU unit 602 of the temperature controller 601 to adjust the temperature of the heat radiating unit 605 and the external environment temperature. The temperature of the medium is controlled using heat. That is, when the temperature of the heat radiating unit 605 is measured by the second temperature measuring unit, the temperature of the external environment 618 is measured by the third temperature measuring unit, and the temperature of the temperature control component housing unit 604 is controlled to a constant temperature. Then, it is determined which one of the heat radiating unit 605 and the outside environment 618 is suitable for heat exchange, and the opening and closing of the heat insulating valves 617a and 617b is controlled to circulate the heat exchange medium.

このように構成すれば、温調器６０１が消費する電力を抑えられるのみならず、温調器６０１や放熱部６０５が放出する熱を抑えられ、装置製造ラインや半導体ラインにおけるエネルギー効率が向上する。   If comprised in this way, not only the electric power which the temperature controller 601 consumes can be suppressed, but the heat which the temperature controller 601 and the thermal radiation part 605 discharge | release will be suppressed, and the energy efficiency in an apparatus manufacturing line or a semiconductor line improves. .

さらに、この第３の実施形態の変形例としては、検査装置内の放熱部６０５に配置された複数の部品や部位について、発熱温度が高いものと、低いものとに区別し、高温度部品収容部と低温度部品収容部とに収容し、それぞれに対して、温度測定手段を配置すると共に、温調器６０１と接続される配管及びバルブを設け、測定温度に応じて、いずれに対して熱交換するかを判断するように構成する例がある。   Further, as a modified example of the third embodiment, a plurality of components and parts arranged in the heat radiating section 605 in the inspection apparatus are distinguished from those having a high heat generation temperature and those having a low heat generation temperature, so that a high temperature component is accommodated. And a low temperature component housing part, and a temperature measuring means is arranged for each of them, and a pipe and a valve connected to the temperature controller 601 are provided. There is an example configured to determine whether to replace.

このように構成すれば、温度制御不要の部品や部位を利用して、温度制御すべき部品の温度を一定に維持することが可能となり、より効率よく、つまり、エネルギー消費量を抑制して、温度制御することができる。   If constituted in this way, it becomes possible to maintain the temperature of the parts to be temperature controlled constant using parts and parts that do not require temperature control, more efficiently, that is, to suppress the energy consumption, The temperature can be controlled.

この変形例の場合、装置外環境部６１８により熱交換してもよいし、装置外環境は熱交換に使用しないように構成することもできる。   In the case of this modification, heat exchange may be performed by the external environment unit 618, or the external environment may be configured not to be used for heat exchange.

なお、上述した実施形態では、レーザ光を用いてウエハの欠陥（異物、汚れ、クラック、結晶欠陥、ＣＯＰ、パターン欠陥等）を検出する欠陥検査装置を例として説明したが、本発明は、レーザ光を用いてウエハの異物を検査する装置のみならず、他の光を用いる欠陥検査装置にも適用可能である。   In the above-described embodiment, the defect inspection apparatus that detects a defect (foreign matter, dirt, crack, crystal defect, COP, pattern defect, etc.) of a wafer using laser light has been described as an example. The present invention can be applied not only to an apparatus for inspecting foreign matter on a wafer using light but also to a defect inspection apparatus using other light.

つまり、光学系には、レーザ光に限らずハロゲンランプ、水銀ランプ、Ｘｅランプなどを利用する光学系や、電子線を利用する電子光学系があり、これらを用いた欠陥検査装置にも適用することができる。   In other words, the optical system is not limited to a laser beam, but includes an optical system using a halogen lamp, a mercury lamp, an Xe lamp, or the like, and an electron optical system using an electron beam, which are also applied to a defect inspection apparatus using these. be able to.

また、被検査物には、半導体基板に用いられるウエハに限らず、フラットパネル表示装置に用いられるガラス基板、ＡＬＴＩＣ基板、センサやＬＥＤ等に用いられるサファイヤ基板、ディスク基板など、平板状の基板の表面検査装置にも適用することができる。   In addition, the inspection object is not limited to a wafer used for a semiconductor substrate, but a flat substrate such as a glass substrate used for a flat panel display, an ALTIC substrate, a sapphire substrate used for a sensor or LED, a disk substrate, or the like. It can also be applied to a surface inspection apparatus.

また、本発明は表面検査、マスク検査、ベベル検査などの検査装置に広く適用することができる。   The present invention can be widely applied to inspection apparatuses such as surface inspection, mask inspection, and bevel inspection.

さらに、本発明における温度制御は、ヒーターによる加熱や、ペルチェ効果、ゼーベック効果を利用する電子冷凍、加熱等を用いることができる。   Furthermore, the temperature control in the present invention can use heating by a heater, electronic refrigeration using the Peltier effect, Seebeck effect, heating, or the like.

本発明が適用される欠陥検査装置の全体構成図である。1 is an overall configuration diagram of a defect inspection apparatus to which the present invention is applied. 本発明の第１の実施形態の原理説明図である。It is principle explanatory drawing of the 1st Embodiment of this invention. 本発明の第１の実施形態における温度制御の動作フローチャートである。It is an operation | movement flowchart of the temperature control in the 1st Embodiment of this invention. 被検査基板上のセンサ投影面に３方向からの照明を説明する図である。It is a figure explaining the illumination from three directions on the sensor projection surface on a to-be-inspected board | substrate. 照明光学系の上面図である。It is a top view of an illumination optical system. 本発明の第１の実施形態における温度制御システム構成図である。It is a temperature control system block diagram in the 1st Embodiment of this invention. 本発明の温度制御による検査感度安定を説明する図である。It is a figure explaining inspection sensitivity stability by temperature control of the present invention. 本発明の第２の実施形態である温度制御システムの概略構成図である。It is a schematic block diagram of the temperature control system which is the 2nd Embodiment of this invention. 本発明の第３の実施形態である温度制御システムの概略構成図である。It is a schematic block diagram of the temperature control system which is the 3rd Embodiment of this invention.

符号の説明Explanation of symbols

１・・・被検査基板（ウエハ）、２・・・チップ、３・・・スリット状ビーム、４・・・ＴＤＩセンサ等のイメージセンサの検出領域、１００・・・照明光学系、１０１・・・レーザ光源、１０２・・・凹レンズ、１０３・・・凸レンズ、１０４・・・光学フィルタ群、１０５・・・・ミラー、１０６・・・光学分岐要素（１１方向）、１０７・・・照明レンズ、１０８・・・落射ミラー、１０９・・・仰角切替ミラー、１１０・・・１１方向の照明、１１４・・・・光学分岐要素（１２方向）、１１５・・・光学分岐要素（１２方向）１２０・・・１２方向の照明、１３０・・・１３方向の照明、２００・・・検査光学系、２０１・・・対物レンズ、２０２・・・フーリエ変換面、２０３・・・結像レンズ、２０４・・・変倍レンズ群、２０５・・・検出器、２０６・・・センサＺ駆動機構、２０７・・・空間フィルタ制御部、２０８・・・レンズ駆動制御部、２０９・・・検出視野、２１０・・・オートフォーカスユニット、３００・・・ステージ部、３０１・・・Ｘステージ、３０２・・・Ｙステージ、３０３・・・Ｚステージ、３０４・・・角度ステージ、３０５・・・ステージコントローラ、４００・・・制御系、４０１・・・駆動処理系、４０２・・・画像処理系、４０３・・・表示系、４０４・・・入力系、５００・・・・架台、５０１・・・石定盤、５０２・・・光学定盤、５０３・・・第２の光学定盤、６００・・・温度制御システム、６０１・・・温調器、６０２・・・温調器の制御ＣＰＵ部、６０３・・・温度測定器、６０４・・・温度制御部品収容部、６０５・・・放熱部、６１１・・・温調媒体の往路配管、６１２・・・温調媒体の復路配管、６１３・・・温調媒体の本体内流路、６１４・・・クリーンフィルタ、６１５・・・ＦＦＵ（ファンフィルタユニット）、６１６・・・（クリーンエアの）気流、６１７ａ、６１７ｂ・・・断熱バルブ   DESCRIPTION OF SYMBOLS 1 ... Test substrate (wafer), 2 ... Chip, 3 ... Slit beam, 4 ... Detection area of image sensor such as TDI sensor, 100 ... Illumination optical system, 101 ... Laser light source, 102 ... concave lens, 103 ... convex lens, 104 ... optical filter group, 105 ... mirror, 106 ... optical branching element (11 directions), 107 ... illumination lens, 108 ... Epi-illumination mirror, 109 ... Elevation angle switching mirror, 110 ... Illumination in 11 directions, 114 ... Optical branching element (12 directions), 115 ... Optical branching element (12 directions) 120 .. 12 direction illumination, 130... 13 direction illumination, 200... Inspection optical system, 201... Objective lens, 202.・ Variable lens group, 2 DESCRIPTION OF SYMBOLS 5 ... Detector, 206 ... Sensor Z drive mechanism, 207 ... Spatial filter control part, 208 ... Lens drive control part, 209 ... Detection visual field, 210 ... Autofocus unit, 300 ... Stage unit, 301 ... X stage, 302 ... Y stage, 303 ... Z stage, 304 ... Angle stage, 305 ... Stage controller, 400 ... Control system, 401. ..Drive processing system, 402... Image processing system, 403... Display system, 404... Input system, 500... Stand, 501. ,..., Second optical surface plate, 600... Temperature control system, 601... Temperature controller, 602... Control CPU unit for temperature controller, 603. ..Temperature control parts housing, 6 5 ... Radiating section, 611 ... Outward piping of temperature control medium, 612 ... Return piping of temperature control medium, 613 ... Flow path in body of temperature control medium, 614 ... Clean filter, 615 ..FFU (fan filter unit), 616 ... (clean air) airflow, 617a, 617b ... heat insulation valve

Claims (2)

光を被検査物に照射し、反射した光または散乱光を検出して、被検査物の欠陥を検出する欠陥検査装置において、
上記欠陥検査装置の複数の部品のうち、温度制御すべき部品を収容する温度制御部品収容部と、
上記温度制御部品収容部内の温度を測定する第１の温度測定手段と、
上記温度測定手段により測定された温度に基づいて、上記温度制御部品収容部内が所定温度となるように上記温度制御すべき部品周辺の温度勾配を考慮して温度制御を行う温調部と、
を備え、
上記欠陥検査装置の複数の部品のうち、温度制御不要部品を収容する第１の放熱部と、上記欠陥検査装置の外部で熱交換する第２の放熱部と、上記第１の放熱部の温度を測定する第２の温度測定手段と、上記第２の放熱部の温度を測定する第３の温度測定手段とを備え、上記温調部は、上記第２の温度測定手段及び上記第３の温度測定手段の温度測定結果に基づいて、第１の放熱部により熱交換するか、第２の放熱部により熱交換するかを判断し、上記温度制御部品収容部内が所定温度となるように温度制御する、
または、
上記欠陥検査装置の温度制御不要部品のうちの高温度部品を収容する高温度部品収容部と、上記温度制御不要部品のうちの低温度部品を収容する低温度部品収容部と、上記高温度部品収容部内の温度を測定する第２の温度測定手段と、上記低温度部品収容部内の温度を測定する第３の温度測定手段とを備え、上記温調部は、上記第２の温度測定手段及び上記第３の温度測定手段の温度測定結果に基づいて、上記高温度部品収容部により熱交換するか、上記低温度部品収容部により熱交換するかを判断し、上記温度制御部品収容部内が所定温度となるように温度制御することを特徴とする欠陥検査装置。 In the defect inspection apparatus that irradiates the inspection object with light, detects reflected light or scattered light, and detects defects of the inspection object.
Among the plurality of components of the defect inspection apparatus, a temperature control component storage unit that stores components to be temperature controlled
First temperature measuring means for measuring the temperature in the temperature control component housing section;
Based on the temperature measured by the temperature measuring means, a temperature control unit that performs temperature control in consideration of a temperature gradient around the component to be temperature controlled so that the inside of the temperature control component housing unit has a predetermined temperature; and
Equipped with a,
Of the plurality of parts of the defect inspection apparatus, a first heat radiating part that accommodates a part that does not require temperature control, a second heat radiating part that exchanges heat outside the defect inspection apparatus, and a temperature of the first heat radiating part A second temperature measuring means for measuring the temperature, and a third temperature measuring means for measuring the temperature of the second heat radiating section, wherein the temperature adjusting section comprises the second temperature measuring means and the third temperature measuring means. Based on the temperature measurement result of the temperature measuring means, it is determined whether the heat exchange is performed by the first heat radiating unit or the second heat radiating unit, and the temperature is controlled so that the inside of the temperature control component housing unit becomes a predetermined temperature. Control,
Or
A high temperature component housing portion for housing a high temperature component among the temperature control unnecessary components of the defect inspection device, a low temperature component housing portion for housing a low temperature component among the temperature control unnecessary components, and the high temperature component. A second temperature measuring means for measuring the temperature in the housing part; and a third temperature measuring means for measuring the temperature in the low temperature component housing part, wherein the temperature adjusting part comprises the second temperature measuring means and Based on the temperature measurement result of the third temperature measuring means, it is determined whether heat exchange is performed by the high temperature component housing unit or heat exchange is performed by the low temperature component housing unit, and the inside of the temperature control component housing unit is predetermined. A defect inspection apparatus characterized in that the temperature is controlled so as to be equal to the temperature . 被検査物の表面を検査する欠陥検査装置において、
上記欠陥検査装置の複数の部品のうち、温度制御すべき部品を収容する温度制御部品収容部と、
上記温度制御部品収容部内の温度を測定する第１の温度測定手段と、
上記第１の温度測定手段により測定された温度に基づいて、上記温度制御部品収容部内が所定温度となるように上記温度制御すべき部品周辺の温度勾配を考慮して温度制御を行う温調部と、
を備え、
上記欠陥検査装置の複数の部品のうち、温度制御不要部品を収容する第１の放熱部と、上記欠陥検査装置の外部で熱交換する第２の放熱部と、上記第１の放熱部の温度を測定する第２の温度測定手段と、上記第２の放熱部の温度を測定する第３の温度測定手段とを備え、上記温調部は、上記第２の温度測定手段及び上記第３の温度測定手段の温度測定結果に基づいて、第１の放熱部により熱交換するか、第２の放熱部により熱交換するかを判断し、上記温度制御部品収容部内が所定温度となるように温度制御する、
または、
上記欠陥検査装置の温度制御不要部品のうちの高温度部品を収容する高温度部品収容部と、上記温度制御不要部品のうちの低温度部品を収容する低温度部品収容部と、上記高温度部品収容部内の温度を測定する第２の温度測定手段と、上記低温度部品収容部内の温度を測定する第３の温度測定手段とを備え、上記温調部は、上記第２の温度測定手段及び上記第３の温度測定手段の温度測定結果に基づいて、上記高温度部品収容部により熱交換するか、上記低温度部品収容部により熱交換するかを判断し、上記温度制御部品収容部内が所定温度となるように温度制御することを特徴とする欠陥検査装置。 In the defect inspection equipment that inspects the surface of the inspection object,
Among the plurality of components of the defect inspection apparatus, a temperature control component storage unit that stores components to be temperature controlled,
First temperature measuring means for measuring the temperature in the temperature control component housing section;
Based on the temperature measured by the first temperature measuring means, a temperature control unit that performs temperature control in consideration of a temperature gradient around the component to be temperature controlled so that the inside of the temperature control component housing unit has a predetermined temperature When,
Equipped with a,
Of the plurality of parts of the defect inspection apparatus, a first heat radiating part that accommodates a part that does not require temperature control, a second heat radiating part that exchanges heat outside the defect inspection apparatus, and a temperature of the first heat radiating part A second temperature measuring means for measuring the temperature, and a third temperature measuring means for measuring the temperature of the second heat radiating section, wherein the temperature adjusting section comprises the second temperature measuring means and the third temperature measuring means. Based on the temperature measurement result of the temperature measuring means, it is determined whether the heat exchange is performed by the first heat radiating unit or the second heat radiating unit, and the temperature is controlled so that the inside of the temperature control component housing unit becomes a predetermined temperature. Control,
Or
A high temperature component housing portion for housing a high temperature component among the temperature control unnecessary components of the defect inspection device, a low temperature component housing portion for housing a low temperature component among the temperature control unnecessary components, and the high temperature component. A second temperature measuring means for measuring the temperature in the housing part; and a third temperature measuring means for measuring the temperature in the low temperature component housing part, wherein the temperature adjusting part comprises the second temperature measuring means and Based on the temperature measurement result of the third temperature measuring means, it is determined whether heat exchange is performed by the high temperature component housing unit or heat exchange is performed by the low temperature component housing unit, and the inside of the temperature control component housing unit is predetermined. A defect inspection apparatus characterized in that the temperature is controlled so as to be equal to the temperature .
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US11/989,018 US8102522B2 (en) 2006-06-30 2007-06-29 Inspection apparatus and inspection method
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