JP4950275B2 - Power converter - Google Patents

Description

  The present invention relates to a power conversion device using a power semiconductor module.

  In recent years, a power conversion device composed of a power semiconductor module using a power semiconductor element can efficiently supply power to a load such as a motor, and thus is widely used for driving a motor of a moving body such as a train and an automobile. ing. In particular, recently, it is being used to drive a motor for restarting after idle stop for improving fuel efficiency for automobiles.

  The power semiconductor element generates heat by switching due to operation of the power conversion device and steady energization. For this reason, in a joint part between different materials, for example, a joint part between a power semiconductor element made of single crystal silicon and a bonding wire made of aluminum, distortion due to thermal fatigue occurs due to a difference in linear expansion coefficient. Therefore, in the past, as a measure to extend the service life, an operation control method with a small temperature rise, a configuration in which power semiconductor modules are connected in parallel to reduce the current density, a method of expanding the cooling capacity to reduce the temperature, and a material with low thermal resistance By selecting, etc., the temperature rise of the power semiconductor element is suppressed, and the temperature margin is increased to extend the life and reliability of the power module.

  On the other hand, in order to prevent damage caused by the sudden shutdown of the apparatus, for example, as described in Japanese Patent Laid-Open No. 7-14948, a temperature sensor such as a thermocouple is built in the power semiconductor module, and each junction deteriorates. It is known that a change in thermal resistance due to temperature can be grasped by a temperature monitor during use. Further, as described in Japanese Patent Laid-Open No. 8-275586, there is also known a method of grasping a lifetime by replacing the lifetime with the number of start times of the switching operation and counting the number of start times of the operation. Furthermore, as described in Japanese Patent Application Laid-Open No. 2002-101668, a method is known in which a temperature detector is attached to a power semiconductor module, a cumulative damage rate is calculated from a temperature rise during each operation, and a lifetime is calculated. Yes.

Japanese Patent Laid-Open No. 7-14948 JP-A-8-275586 JP 2002-101668 A

  However, the conventional method for extending the life such as the operation control method with a small temperature rise has a problem that the power semiconductor module and the cooling device are increased in size.

  Further, in the life prediction method described in Japanese Patent Application Laid-Open No. 7-14948, etc., it is necessary to improve the accuracy of the temperature sensor and the prediction accuracy more than ever. Since power semiconductor modules are basically made of low thermal resistance materials, an accuracy of 1 ° C or less is required to detect the temperature increase of the thermal resistance of metal joints due to cracks. Realization is difficult considering the change of temperature. In particular, deterioration of a metal joint such as wire bonding has a problem that temperature detection is very severe because heat generation and heat dissipation of the deteriorated part are less than heat generated by a power semiconductor element.

  An object of the present invention is to provide a power conversion device that is small in size and that can accurately detect deterioration of a metal joint.

In order to achieve the above-described object, the present invention provides a power conversion device including a power semiconductor module used for power conversion, and a control circuit unit that controls driving of the power semiconductor module, wherein the power semiconductor module includes: An insulating plate having a metal wiring pattern, and a power semiconductor element in which an electrode surface formed on one main surface is opposed to the wiring pattern and the electrode surface is electrically connected to the wiring pattern; A metal plate electrically connected to the external electrode; a first terminal for detecting a potential of the electrode surface formed on the other main surface of the power semiconductor element and electrically connected to the control unit; A second terminal that detects the potential of the metal plate and is electrically connected to the control unit; one end is joined to the other electrode surface of the power semiconductor element; and the other end is connected to the metal plate Contact A first metal wire through which the main current of the power semiconductor element flows, a second metal having one end joined to the other electrode surface of the power semiconductor element and the other end joined to the first terminal. And a third metal wire having one end joined to the metal plate and the other end electrically connected to the second terminal, and the control unit is configured to supply a potential from the first terminal. And the information on the potential from the second terminal, the characteristics of the joint between the first metal wire and the power semiconductor element, and the joint between the first metal wire and the metal plate It has a junction characteristic detection part for detecting the characteristic.
With such a configuration, it is small in size and can accurately detect deterioration of the metal joint.

  ADVANTAGE OF THE INVENTION According to this invention, the power converter device which can detect the deterioration of a metal junction part accurately can be obtained.

It is a circuit diagram of the power semiconductor module by one Embodiment of this invention. It is a section perspective view showing appearance composition of a power semiconductor module by one embodiment of the present invention. It is a characteristic view of the junction part detected by the junction part characteristic detection circuit 20 used for the power semiconductor module by one Embodiment of this invention. It is a 2nd circuit diagram of the power semiconductor module by one Embodiment of this invention. It is a 3rd circuit diagram of the power semiconductor module by one Embodiment of this invention. It is a cross-sectional perspective view which shows the external appearance structure of the power semiconductor module by other embodiment of this invention. It is a circuit diagram of the power semiconductor module by other embodiment of this invention. It is a circuit diagram of a power converter using a power semiconductor module by one embodiment of the present invention. It is a system configuration figure of a power converter using a power semiconductor module by one embodiment of the present invention. It is a 2nd circuit diagram of the power converter device using the power semiconductor module by one Embodiment of this invention. It is principle explanatory drawing of the lifetime prediction by the power converter device using the power semiconductor module by one Embodiment of this invention. It is a 3rd circuit diagram of the power converter device using the power semiconductor module by one Embodiment of this invention. It is a block diagram of the moving body using the power converter device by one Embodiment of this invention. It is a block diagram of the moving body using the power converter device by one Embodiment of this invention.

Hereinafter, the configuration and operation of a power semiconductor module according to an embodiment of the present invention will be described with reference to FIGS.
First, the circuit configuration of the power semiconductor module according to the present embodiment will be described with reference to FIG.
FIG. 1 is a circuit diagram of a power semiconductor module according to an embodiment of the present invention.

  Here, the power semiconductor element 2 will be described using an IGBT as an example. The power semiconductor element 2 includes an upper surface voltage terminal 11, a gate terminal 12, and a lower surface voltage terminal 13. As will be described later with reference to FIG. 2, the emitter of the power semiconductor element 2 is connected to the ground via a plurality of metal wires 8 and a metal plate 3. The collector of the power semiconductor element 2 is connected to the lower surface voltage terminal 13 via solder. Here, since the emitter of the power semiconductor element 2 and the metal wire 8 are ultrasonically bonded, a plurality of first bonding portions are formed, and the metal wire 8 and the metal plate 3 are also ultrasonically bonded. A plurality of second joints are formed. A resistor Rt8 indicates the resistance of the first and second junctions. Further, the resistor Rt9 indicates the resistance of the joint portion by the solder that joins the collector of the power semiconductor element 2 and the lower surface voltage terminal 13.

  The junction characteristic detection circuit 20 is connected to the upper surface voltage terminal 11 and the newly provided voltage terminal 10, and detects the voltage across the resistor Rt8. The junction characteristic detection circuit 20 detects the characteristic of the junction based on the detected voltage value or the resistance value obtained from the voltage value, and determines the lifetime of the junction. The method for determining the lifetime will be described later with reference to FIG. The determined result is displayed on the display 30, and when the life of the joint is shortened, an alarm is given by the alarm device 32, and the characteristics and life of the joint are stored in the storage unit 34. The information stored in the storage unit 34 can be read from the outside by connecting the portable terminal 40. When the power semiconductor module is used for an electric vehicle or the like, a car dealer or a car repair shop has a portable terminal 40, and the portable terminal 40 can be used to read data on the life of the joint.

Next, the external configuration of the power semiconductor module according to the present embodiment will be described with reference to FIG.
FIG. 2 is a cross-sectional perspective view showing an external configuration of a power semiconductor module according to an embodiment of the present invention. The same reference numerals as those in FIG. 1 indicate the same parts.

  The power semiconductor module 1 includes a power semiconductor element 2 having electrodes on the surface, a metal plate 3 for external electrodes, a metal plate 4 for heat dissipation, an insulating plate 5 that is metal-plated 6 on both sides and also serves as an electrode, And a structural material 7 of supporting insulating resin. The lower surface of the power semiconductor element 2 is metal-bonded to the heat-dissipating metal plate 4 via the insulating plate 5 with solder 9 in order to dissipate heat generated during switching or steady-state energization. Further, the upper surface of the power semiconductor element 2 and the metal plate 3 for external electrodes are ultrasonically bonded by a plurality of metal wires 8. The metal plate 3 is grounded. As understood from the circuit diagram of FIG. 1, a large current flows from the upper surface electrode (emitter) of the power semiconductor element 2 to the ground, and therefore a plurality of metal wires 8 are used. As each voltage terminal, an upper surface voltage terminal 11, a gate terminal 12, and a lower surface voltage terminal 13 of the power semiconductor element are provided. The upper surface voltage terminal 11 is connected to the emitter electrode of the power semiconductor element 2. The gate terminal 12 is connected to the gate electrode of the power semiconductor element 2. The lower surface voltage terminal 13 is connected to the collector electrode of the power semiconductor element 2.

  Here, a plurality of first joints are formed between the emitter electrode of the power semiconductor element 2 and the metal wire 8, and a plurality of second joints are formed between the metal wire 8 and the metal plate 3. The resultant combined resistance is the resistance Rt8 shown in FIG. Also, a joint portion is formed by the solder 9 that joins the collector electrode of the power semiconductor element 2 and the lower surface voltage terminal 13, and this resistance is the resistance Rt9 shown in FIG.

  Furthermore, in the present embodiment, the voltage terminal 10 of the external electrode is newly provided in order to determine the degree of deterioration of the first joint portion. The power semiconductor element 2 generates heat when energized, and the temperature repeatedly rises and falls. For example, the power semiconductor element 2 is mainly made of single crystal silicon and has a linear expansion coefficient of about 4.2 × 10 −6 / ° C., whereas the metal wire 8 contains pure aluminum or nickel of several ppm. The linear expansion coefficient is about 23 × 10 −6 / ° C., which is a difference of about 5 times. For this reason, distortion due to a difference in linear expansion coefficient occurs due to long-term use, and cracks are generated and propagated in the joint portion of the metal wire 8 joined on the upper surface of the power semiconductor element 2. Due to the cracks / progress, the joint area of the metal wire 8 gradually decreases with use for a long time, and the electrical resistance of this portion gradually increases. Then, as shown in FIG. 1, the voltage across the first junction is measured using the voltage terminal 10 and the upper surface terminal 11. Similarly, the electrical resistance of the solder 9 which is the joint portion on the lower surface gradually increases. Therefore, it is possible to determine the deterioration of the joint portion based on the resistance of the joint portion of the solder 9.

  In the above description, an IGBT is used as an example of the power semiconductor element 2, but the same applies to the case where a MOSFET is used.

Next, the characteristics of the junction detected by the junction characteristic detection circuit 20 used in the power semiconductor module according to the present embodiment will be described with reference to FIG.
FIG. 3 is a characteristic diagram of the junction detected by the junction characteristic detection circuit 20 used in the power semiconductor module according to the embodiment of the present invention.

  In FIG. 3, the horizontal axis indicates the number of endurance times, that is, the number of switching times of the power semiconductor element. The vertical axis represents the voltage at the junction detected by the junction characteristic detection circuit 20. In addition, since the electric current which flows through a junction part is detectable, the resistance of a junction part may be sufficient.

  As shown in FIG. 3, as the number of endurances increases, the voltage at the junction gradually increases. The use of the power semiconductor element for a long time causes distortion due to the difference in linear expansion coefficient, and cracks are generated and propagated in the joint portion of the metal wire 8 joined on the upper surface of the power semiconductor element 2. Due to the cracks / progress, the joint area of the metal wire 8 gradually decreases with use for a long time, and the electrical resistance of this portion gradually increases.

  Among these, at points D1, D2, and D3, the curve indicating the characteristics is bent, and the voltage value increases rapidly at each point. This is because, as shown in FIG. 2, one or several of the plurality of joint portions of the metal wire 8 are cut to connect the emitter electrode of the power semiconductor element 2 and the metal plate 3. This shows that the number of 8 decreases and the combined resistance value of the metal wire 8 increases rapidly.

  At the point D4, all the metal wires 8 are disconnected, and the voltage value increases to infinity. Therefore, the lifetime of the semiconductor power module can be known by detecting the first breakdown of the joint as at the point D1. In order to obtain the threshold value VL at the point D1, the resistance of the metal junction at the end of the lifetime or the voltage of the metal junction at the end of the design margin is obtained by testing or area calculation in advance. Determine the threshold.

  In the circuit configuration shown in FIG. 1, in the initial state, the resistance of the metal wire 8 and the metal plate 3 is small and the initial voltage VO is almost 0V. On the other hand, the threshold value VL is, for example, about 100 mV. Of course, the threshold value differs depending on the circuit configuration.

  Furthermore, from the above-mentioned concept, the current life can be obtained as follows. That is, the lifetime (%) can be obtained as current lifetime = (current metal junction voltage V−initial metal junction voltage VO) / (threshold VL−initial metal junction voltage value VO). it can.

  The junction characteristic detection circuit 20 displays the obtained life on the display 30. The junction characteristic detection circuit 20 outputs an alarm from the alarm device 32 when the detected voltage at the junction becomes the threshold value VL or approaches the threshold value VL. Further, the junction characteristic detection circuit 20 stores the detected voltage value of the junction or the obtained lifetime of the junction in the storage unit 34. The stored contents can be read from the storage unit 34 by using the external terminal 40.

Next, the second circuit configuration of the power semiconductor module according to the present embodiment will be explained with reference to FIG.
FIG. 4 is a second circuit diagram of the power semiconductor module according to the embodiment of the present invention. The same reference numerals as those in FIG. 1 indicate the same parts.

  The junction characteristic detection circuit 20A is connected to the lower surface voltage terminal 13 and the newly provided voltage terminal 10, and detects the voltage across the resistors Rt8 and Rt9. That is, the junction characteristic detection circuit 20A monitors the resistance Rt8 at the junction of the metal wire 8 and the resistance Rt9 at the junction of the solder 9.

  However, in this case, the voltage of the power semiconductor element 2 is also included. The voltage of the power semiconductor element 2 changes with temperature. Therefore, a temperature sensor 52 that detects the temperature of the power semiconductor element 2 and a temperature correction circuit 50 that corrects temperature characteristics based on the temperature of the power semiconductor element 2 detected by the temperature sensor 52 are provided. The junction characteristic detection circuit 20A performs temperature correction based on the output of the temperature correction circuit 50, detects the characteristic of the junction, and determines the life of the junction. The determined result is output to the display device 30, the alarm device 32, and the storage unit 34 as shown in FIG.

  It should be noted that the resistance of the metal junction can be measured at almost the same temperature each time as long as there is almost no heat generation due to energization and it is in the same state as the outside air temperature just after the start of use of the power semiconductor element module. The voltage can be measured by Therefore, the temperature sensor 52 and the temperature correction circuit 50 are not required if the measurement is performed at substantially the same temperature immediately after energization.

Next, the third circuit configuration of the power semiconductor module according to the present embodiment will be explained with reference to FIG.
FIG. 5 is a third circuit diagram of the power semiconductor module according to the embodiment of the present invention. The same reference numerals as those in FIG. 1 indicate the same parts.

  The junction characteristic detection circuit 20A is connected to the lower surface voltage terminal 13 and the upper surface voltage terminal 11, and detects the voltage across the resistor Rt9. That is, the junction characteristic detection circuit 20A monitors the resistance Rt9 at the junction of the solder 9.

  However, in this case, since the voltage of the power semiconductor element 2 is included, the temperature is corrected by the temperature sensor 52 and the temperature correction circuit 50. The junction characteristic detection circuit 20A performs temperature correction based on the output of the temperature correction circuit 50, detects the characteristic of the junction, and determines the life of the junction. The determined result is output to the display device 30, the alarm device 32, and the storage unit 34 as shown in FIG.

  It should be noted that the resistance of the metal junction can be measured at almost the same temperature each time as long as there is almost no heat generation due to energization and it is in the same state as the outside air temperature just after the start of use of the power semiconductor element module. The voltage can be measured by Therefore, the temperature sensor 52 and the temperature correction circuit 50 are not required if the measurement is performed at substantially the same temperature immediately after energization.

  As described above, according to the present embodiment, since it is only necessary to provide an external terminal and measure the voltage at the junction, the size is small, and deterioration of the metal junction can be accurately detected.

Next, the configuration and operation of a power semiconductor module according to another embodiment of the present invention will be described with reference to FIGS.
First, the external configuration of the power semiconductor module according to the present embodiment will be described with reference to FIG.
FIG. 6 is a cross-sectional perspective view showing an external configuration of a power semiconductor module according to another embodiment of the present invention. The same reference numerals as those in FIG. 2 indicate the same parts.

  In the present embodiment, the difference from the embodiment shown in FIG. 2 is that the voltage terminal 10A on the external electrode side is provided in the same shape as the electrodes 11, 12, and 13 of the power semiconductor element. The voltage terminal 10A is connected to the external electrode 3 by a metal wire 8B.

Next, the circuit configuration of the power semiconductor module according to the present embodiment will be described with reference to FIG.
FIG. 7 is a circuit diagram of a power semiconductor module according to another embodiment of the present invention. The same reference numerals as those in FIG. 1 indicate the same parts.

  In the present embodiment, the difference from the embodiment shown in FIG. 1 is that the junction characteristic detection circuit 20 is connected to the upper surface voltage terminal 11 and the voltage terminal 10A and detects the voltage across the resistor Rt8. The junction characteristic detection circuit 20 detects the characteristic of the junction based on the detected voltage value or the resistance value obtained from the voltage value, and determines the lifetime of the junction. The result of the determination is output to the display device 30, the alarm device 32, and the storage unit 34, as in FIG.

  In this embodiment, the influence of the voltage generated by the external electrode 3 of FIG. 2 and the influence of the contact resistance of the voltage terminal 10 of FIG. 2 are excluded from the example shown in FIG. Can be measured with high accuracy.

  In an operation mode in which a large current is applied in an extremely short time such as idle stop, the temperature of the metal plate 4 for heat dissipation does not increase so much, and the deterioration of the joint of the metal wire 8 is faster than the joint of the solder 9 This example is effective.

  As described above, according to the present embodiment, since it is only necessary to provide an external terminal and measure the voltage at the junction, the size is small, and deterioration of the metal junction can be accurately detected.

Next, the configuration and operation of a power conversion device using a power semiconductor module according to an embodiment of the present invention will be described with reference to FIGS.
FIG. 8 is a circuit diagram of a power conversion device using a power semiconductor module according to an embodiment of the present invention. FIG. 9 is a system configuration diagram of a power conversion device using a power semiconductor module according to an embodiment of the present invention.

  As shown in FIG. 8, when controlling the three-phase AC motor 17, the power conversion device 16 includes six power semiconductor elements 2 a, 2 b, 2 c, 2 d, 2 e, 2 f, and direct current from the battery 19. Is converted into a three-phase alternating current and supplied to the motor 17. For example, the power semiconductor elements 2a and 2b generate a U-phase alternating current, the power semiconductor elements 2c and 2d generate a V-phase alternating current, and the power semiconductor elements 2e and 2f generate a W-phase alternating current. The power semiconductor elements 2a, 2b, 2c, 2d, 2e, and 2f are controlled by a gate voltage by a motor control unit (MCU) 60 and perform a switching operation. The capacitor 18 is used as a filter capacitor.

  Upper power semiconductor elements 2a, 2c, 2e are connected to a high voltage, and lower power semiconductor elements 2b, 2d, 2f are connected to ground. In this case, among the power semiconductor modules 2b, 2d, and 2f connected to the ground side, which is easy to measure the voltage, by extracting the voltage at the metal junction of the power semiconductor element having the highest temperature in the module, The voltage can be easily extracted without considering the voltage. Specifically, since the lower power semiconductor elements 2b and 2f are disposed at both ends, the heat dissipation state is relatively good, whereas the center lower power semiconductor element 2d is in a poor heat dissipation state and tends to become high temperature. . Therefore, the junction characteristic detection circuit 20 detects the voltage at both ends of the metal wire junction of the lower power semiconductor element 2d at the center by the configuration shown in FIG.

  As shown in FIG. 9, the motor control unit 60 performs switching driving of the power semiconductor elements constituting the power conversion device 16 according to the output of the sensor 62 that detects an intention such as the degree of acceleration of the driver. As a result, the motor drive current supplied from the battery 19 to the motor 17 is controlled. Here, as the sensor 62, for example, an accelerator opening sensor is used.

  As shown in FIG. 1, the junction characteristic detection circuit 20 detects the voltage across the resistor Rt8 at the junction of the metal wire as the junction voltage V. By monitoring the motor drive current I, the junction characteristic detection circuit 20 can also determine the degree of deterioration based on the resistance value of the junction. The junction characteristic detection circuit 20 detects the characteristic of the junction based on the detected voltage value or the resistance value obtained from the voltage value, and determines the lifetime of the junction. The determined result is displayed on the display 30, and when the life of the joint is shortened, an alarm is given by the alarm device 32, and the characteristics and life of the joint are stored in the storage unit 34. Information stored in the storage unit 34 can be read from the outside by connecting a portable terminal.

Next, a second configuration and operation of the power conversion device using the power semiconductor module according to the embodiment of the present invention will be described with reference to FIGS. 10 and 11.
FIG. 10 is a second circuit diagram of the power conversion device using the power semiconductor module according to the embodiment of the present invention. In addition, the same code | symbol as FIG. 8 has shown the same part. FIG. 11 is a diagram for explaining the principle of life prediction by the power conversion device using the power semiconductor module according to one embodiment of the present invention.

  As shown in FIG. 10, in this example, a life prediction circuit 22 is provided in addition to the configuration shown in FIG. As shown in FIG. 11, the life prediction circuit 22 predicts the future life by linear approximation from the life transition so far. The prediction result is displayed on the display 30. The display content is, for example, “the lifetime of this apparatus is x year y month z day”. Thereby, the user can grasp | ascertain a lifetime by time.

Next, a third configuration and operation of the power conversion device using the power semiconductor module according to the embodiment of the present invention will be described with reference to FIG.
FIG. 12 is a third circuit diagram of the power conversion device using the power semiconductor module according to the embodiment of the present invention. In addition, the same code | symbol as FIG. 8 has shown the same part.

  In the present embodiment, the junction characteristic detection circuit 20B outputs a power save signal PS to the motor control unit 60 when the determined life of the semiconductor power module reaches a predetermined life. When the power save signal is input, the motor control unit 60 reduces the current supplied to the motor 17 and decreases the output torque of the motor, thereby performing the power save operation. Since the motor current is reduced, the current flowing through the joint is also reduced, so that the life of the joint can be extended. The lifetime when outputting the power save signal is, for example, 95%. When the power save signal is output, a display such as “current life xx%, during power save operation” is displayed on the display 30. As a result, when the service life approaches, the operation is limited, and damage due to the stop of the motor can be prevented.

Next, the configuration of the moving body using the power conversion device according to the embodiment of the present invention will be described with reference to FIG.
FIG. 13 is a block diagram of a mobile unit using the power conversion device according to the embodiment of the present invention. The same reference numerals as those in FIG. 12 denote the same parts.

  The moving body 70 is an electric vehicle such as an electric vehicle driven only by the motor 17 or a hybrid vehicle driven by a motor and an engine. The motor 17 is driven by the power conversion system shown in FIG. When the junction characteristic detection circuit 20B outputs a power save signal, a display such as “Current life xx%. During power save operation. Check.” Is displayed on the display 30. Thereby, since the exchange time of a power converter device can be grasped | ascertained, cost can be reduced and it can mount in a mobile body. In particular, it is effective as a power conversion device in an energization mode, such as a motor drive for idling stop for improving fuel efficiency for automobiles.

Here, the configuration of the moving body using the power conversion device according to the embodiment of the present invention will be described with reference to FIG.
FIG. 14 is a block diagram of a mobile unit using the power conversion device according to the embodiment of the present invention. Note that the same reference numerals as those in FIG. 13 denote the same parts.

  This embodiment shows a case where the present invention is applied to a hybrid vehicle including an engine 80 in addition to the motor 17. For example, the front wheels are driven by the motor 17 and the rear wheels are driven by the engine 80. The rear wheel may be driven by the motor 17 and the front wheel may be driven by the engine 80, or the front wheel or the rear wheel may be driven by the motor 17 and the engine 80.

  The engine control unit (ECU) 70 controls the fuel injection amount and ignition timing for the engine 80 in accordance with the engine speed detected by the crank angle sensor 92, the intake air amount detected by the air flow sensor 93, and the like. . The ECU 70 satisfies a predetermined condition such as detecting that the brake is depressed by the brake pedal sensor 94 and detecting that the vehicle speed is 95 km / h and the vehicle is stopped by the vehicle speed sensor 95. Then, the engine 80 is stopped and idling is stopped. Thereafter, when the brake pedal sensor 94 stops the depression of the brake and the accelerator pedal sensor 96 detects that the accelerator pedal is depressed, a command for driving the motor is sent to the MCU 60. When the motor 17 is driven by the MCU 60, the moving body starts moving. When the ECU 70 detects that the vehicle speed detected by the vehicle speed sensor 95 is faster than 0 km / h and the moving body starts to move, the ECU 70 starts fuel injection control and ignition timing control and restarts the engine 80. As described above, at the time of idling stop, the motor 17 starts moving the moving body, and thereafter the engine 70 is restarted.

  As described above, according to each embodiment of the present invention, a power semiconductor module, a power conversion device using the power semiconductor device, an electric vehicle, and the like are detected by detecting the deterioration of the metal joint by the resistance increase or the voltage increase. In this mobile body, it is possible to reduce maintenance costs, increase user merits such as fuel efficiency by reducing size and weight, and reduce damage due to unexpected destruction.

Claims (9)

A power semiconductor module used for power conversion;
A control circuit unit that controls driving of the power semiconductor module, and a power conversion device comprising:
The power semiconductor module is
An insulating plate having a metal wiring pattern;
A power semiconductor element in which an electrode surface formed on one main surface is opposed to the wiring pattern and the electrode surface is electrically connected to the wiring pattern;
A metal plate electrically connected to the external electrode;
A first terminal that detects a potential of an electrode surface formed on the other main surface of the power semiconductor element and is electrically connected to the control unit;
A second terminal that detects a potential of the metal plate and is electrically connected to the control unit;
A first metal wire having one end joined to the other electrode surface of the power semiconductor element and the other end joined to the metal plate, and a main current of the power semiconductor element flows;
A second metal wire having one end bonded to the other electrode surface of the power semiconductor element and the other end bonded to the first terminal;
A third metal wire having one end joined to the metal plate and the other end electrically connected to the second terminal;
The control unit is configured to determine characteristics of a junction between the first metal wire and the power semiconductor element based on information on the potential from the first terminal and information on the potential from the second terminal, and the first 1. A power conversion device comprising: a junction characteristic detection unit for detecting a characteristic of a junction between one metal wire and the metal plate. In the power converter device described in Claim 1,
A resin structure for fixing the metal plate,
The metal plate is fixed to the resin structure such that the height of the joint between the first metal wire and the metal plate is different from the height of the other electrode surface of the power semiconductor element. The power converter characterized by this. In the power converter device according to claim 2,
A third terminal electrically connected to the electrode for controlling the switching operation of the power semiconductor element,
The power converter according to claim 1, wherein the first terminal, the second terminal, and the third terminal are arranged in a line along a side wall of the resin structure. In the power converter device in any one of Claims 1 thru | or 3,
The other electrode surface of the power semiconductor element and the first metal wire are joined by ultrasonic waves,
The power converter according to claim 1, wherein the metal plate and the first metal wire are joined by ultrasonic waves. In the power converter device in any one of Claims 1 thru | or 4,
A first solder material for electrically connecting the electrode surface and the wiring pattern formed on one main surface of the power semiconductor element;
A heat dissipating metal plate for dissipating the generated heat of the power semiconductor element, on the side opposite to the side where the power semiconductor element is disposed via the insulating plate;
A power conversion device comprising: a second solder material for joining the insulating plate and the heat radiating metal plate. In the power converter device in any one of Claims 1 thru | or 5,
The power semiconductor element is an IGBT,
The electrode surface formed on one main surface of the power semiconductor element forms a collector electrode;
The power conversion device in which the electrode surface formed on the other main surface of the power semiconductor element forms an emitter electrode. In the power converter device in any one of Claims 1 thru | or 6,
The said junction part characteristic detection part transmits the information which concerns on the detection result of the characteristic of the said junction part to the indicator for displaying the detection result of the characteristic of the said junction part, The power converter device characterized by the above-mentioned. In the power converter device in any one of Claims 1 thru | or 7,
The said junction part characteristic detection part transmits the information which concerns on the detection result of the characteristic of the said junction part to the alarm device for warning the detection result of the characteristic of the said junction part, The power converter device characterized by the above-mentioned. In the power converter device in any one of Claims 1 thru | or 8,
The joint property detection unit has a storage unit for storing information related to the detection result of the property of the joint,
Information relating to the detection result of the characteristics of the joint stored in the storage unit is transmitted from the external terminal to the external terminal in response to a command.

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