JP4945925B2 - Multilayer light emitting diode device and reflective light emitting diode unit - Google Patents

Description

  The present invention relates to a multilayer light emitting diode device formed by laminating a plurality of reflective light emitting diodes and a reflective light emitting diode unit suitable for use in the multilayer light emitting diode device.

Conventionally, a reflection type light emitting diode in which a light emitting diode as a light emitting element is sealed in a sealing body made of a light transmissive material and a reflection surface is formed on the surface of the sealing body facing the light emitting surface of the light emitting diode. Are known. In addition, a plurality of reflection type light emitting diodes are arranged in the light emission direction so that the reflection type light emitting diodes are stacked and a dichroic mirror is formed on each reflection surface of the reflection type light emitting diodes, thereby providing a plurality of reflection type light emitting diodes. 2. Description of the Related Art A stacked light emitting diode device that can emit light emitted from a light emitting diode from the same surface is known (see, for example, Patent Document 1).
JP-A-8-222767

  However, in the conventional multilayer light emitting diode device, since the light emitting diode is sealed in a sealing body made of a light transmissive material, there is a problem that the heat dissipation of the light emitting diode is poor and it is difficult to increase the output. there were.

  The present invention has been made in view of the above-described circumstances, and an object of the present invention is to provide a multilayer light emitting diode device and a reflective light emitting diode unit that are excellent in heat dissipation and can achieve high output.

In order to achieve the above object, the present invention provides a light-emitting element and a dichroic mirror that are opposed to each other in a metal hollow holder case having high thermal conductivity, and the light- emitting element is formed of a high thermal conductive material. Provided is a multilayer light emitting diode device characterized in that a plurality of reflection type light emitting diode units attached to a frame and attached to the holder case are connected via a connecting material made of an electrically insulating material. .

  According to the present invention, in the above invention, an adjustment spacer is provided between the lead frame and the dichroic mirror to adjust the focal position of the dichroic mirror to the arrangement position of the light emitting element.

  Moreover, the present invention is characterized in that, in the above invention, a radiating fin is formed on the outer surface of the holder case.

  According to the present invention, in the above invention, a diffusion filter is provided between the light emitting element and the dichroic mirror.

  In the invention described above, the dichroic mirror is characterized in that a dielectric multilayer film having a predetermined number of layers or more is formed on the surface of a glass substrate.

  According to the present invention, in the above invention, the diameter of the dichroic mirror is about 40 times the outer size of the light emitting element.

Further, the present invention is characterized in that, in the above-mentioned invention, the optical reflection surface of the dichroic mirror is formed into an aspherical shape or a parabolic shape with a focus on an arrangement position of the light emitting element .

  Furthermore, the present invention is characterized in that, in the above invention, each of the plurality of reflective light emitting diode units emits light having a different center wavelength.

In order to achieve the above object, the present invention provides a reflection type light emitting diode unit that reflects light of a light emitting element by a reflecting mirror and emits the light outside, in a metal hollow holder case having high thermal conductivity. The light emitting element and the reflecting mirror are arranged opposite to each other, the light emitting element is attached to a lead frame formed of a high thermal conductivity material, the lead frame is attached to the holder case, and a connecting member made of an electrically insulating material is used. The other reflection type light emitting diode unit is configured to be connectable.

  According to the present invention, a plurality of reflection type light emitting diode units, in which a light emitting element and a dichroic mirror are arranged to face each other in a metal hollow holder case having high thermal conductivity, are connected to a connecting material made of an electrically insulating material. Accordingly, the heat dissipation of the light emitting element can be increased, the output can be increased, and the electrical insulation between the reflective light emitting diode units can be increased.

Embodiments of the present invention will be described below with reference to the drawings.
FIG. 1 is a schematic view showing the front and side of a multilayer light emitting diode device 100 showing an embodiment of the present invention, and FIG. 2 is a schematic cross-sectional view thereof. As shown in these drawings, the multilayer light emitting diode device 100 includes a plurality of reflective light emitting diode units 10 (three in the illustrated example), and these reflective light emitting diode units 10 are arranged along the light emission direction P. It is arranged so that it may be laminated.

FIG. 3 is an exploded perspective view of the reflective light emitting diode unit 10.
As shown in FIGS. 2 and 3, the reflective light emitting diode unit 10 is disposed so as to face the light emitting diode 2 that is a light emitting element, the lead frame 1 that supports the light emitting diode 2, and the light emitting surface 2 </ b> A of the light emitting diode 2. A dichroic mirror 3 serving as a reflecting mirror and a connecting member 4 are provided, and these are installed in a holder case 5 having a cylindrical shape (or a cylindrical shape having a square cross section). The holder case 5 is made of a metal material having high thermal conductivity such as aluminum, and a heat radiating portion 5C having a large number of heat radiating fins 7 is formed on the outer peripheral surface (outer surface) thereof.

  As shown in FIG. 4, the lead frame 1 includes an annular portion 1A, a substantially disc-shaped attachment portion 1B disposed at the center O of the annular portion 1A, and the annular portion 1A toward the attachment portion 1B. The three arm portions 1C extending in parallel are formed integrally by, for example, die-cutting a plate material having high thermal conductivity such as copper. On the back surface of the lead frame 1, as shown in FIG. 4C, the light emitting diode 2 is fixed to the mounting portion 1B, and the circuit board 6 is provided on the arm portion 1C. External power is supplied to the light emitting diode 2. A diffusion filter 9 is attached to the light emitting surface 2A of the light emitting diode 2, which will be described in detail later.

  As shown in FIG. 3, the lead frame 1 is inserted into the holder case 5 through the opening 5A on the back side of the holder case 5 with the light emitting diode 2 (light emitting surface 2A) facing the back side. As shown, it is latched by a latching piece 5 </ b> B provided on the inner peripheral surface of the holder case 5. At this time, the side peripheral surface of the annular portion 1 </ b> A of the lead frame 1 is in close contact with the inner side surface of the holder case 5, and heat generated by the light emitting diode 2 is transmitted to the holder case 5.

  As shown in FIGS. 2, 3 and 6, the dichroic mirror 3 has a concave optical reflection surface 3A that selectively reflects only light in a specific wavelength band and transmits light in other wavelength bands. The optical reflecting surface 3A is inserted into the holder case 5 with the focal length adjusting spacer 8 interposed so that the light reflecting surface 2A of the light emitting diode 2 is opposed. The optical reflecting surface 3A has a high reflection characteristic with respect to the radiation wavelength of the light emitting diode 2 arranged opposite to the optical reflecting surface 3A. It is formed as an aspherical surface. Therefore, in each reflective light emitting unit 10, light emitted from the light emitting diode 2 is reflected as light substantially parallel to the central axis N, and is centered from the opening 5D (see FIG. 2) on the front side of the holder case 5. It is externally radiated as light substantially parallel to the axis N.

  The focal length adjusting spacer 8 is a resin member for adjusting the focal position of the optical reflecting surface 3 </ b> A of the dichroic mirror 3. More specifically, since the light emitting diode 2 has a different chip height depending on the manufacturer and its structure (bare chip, surface mount chip, etc.), the distance from the light emitting diode 2 (light emitting surface 2A) to the optical reflecting surface 3A, That is, the focal length f (see FIG. 2) differs for each reflective light emitting diode unit 10, and as a result, there is a problem that the light distribution characteristics and the illuminance distribution do not match between the reflective light emitting diode units 10.

Therefore, in the present embodiment, a distance (focal length f) from the light emitting diode 2 (light emitting surface 2A) to the optical reflecting surface 3A is provided by interposing a focal length adjusting spacer 8 between the lead frame 1 and the dichroic mirror 3. ) To adjust the focal position to the arrangement position of the light emitting diode 2.
In the present embodiment, a plurality of columnar members (three in the illustrated example) are used as the focal length adjusting spacer 8. However, the present invention is not limited to this and is substantially the same as the annular portion 1 </ b> A of the lead frame 1. It is good also as a structure using a cylindrical member of a diameter.

  The connecting member 4 is formed of an electrically insulating material such as resin in a cylindrical shape, and one end 4A is inserted into the opening 5A on the back side of the holder case 5 as shown in FIGS. At this time, as shown in FIG. 2, the other end 4 </ b> B of the connecting member 4 protrudes from the opening 5 </ b> A on the back side of the holder case 5, and the other end 4 </ b> B is the front of the holder case 5 of the reflection type light emitting diode unit 10 in the subsequent stage. The reflective light emitting diode unit 10 is connected by being inserted into the opening 5 </ b> D on the side and being hooked on the hook portion 5 </ b> B of the holder case 5. In the last-stage reflection type light emitting diode unit 10, as shown in FIGS. 1 and 2, no other reflection type light emitting diodes 10 are connected to the subsequent stage. Absent.

  In this way, the plurality of reflective light emitting diode units 10 are connected via the connecting member 4 so as to be stacked, and the stacked light emitting diode device 100 shown in FIGS. 1 and 2 is configured. In the multilayer light emitting diode device 100, as shown in FIG. 2, each reflective light emitting diode unit 10 emits light in the same light emitting direction P, and the dichroic of each reflective light emitting diode unit 10 When the mirror 3 transmits the light from the subsequent stage, the lights of the respective reflective light emitting diode units 10 are combined and radiated from the front of the frontmost reflective light emitting diode unit 10 to the outside.

  Therefore, in the multilayer light emitting diode device 100, the radiated lights of the respective reflective light emitting diode units 10 are synthesized and radiated to the outside, so that a high light output can be easily obtained. Each of the light emitting diodes 2 of the reflective light emitting diode unit 10 has red (R: wavelength 660 nm), green (G: wavelength 525 nm), and blue (B: wavelength 470 nm) corresponding to the three primary colors of light. If the configuration uses light, it is possible to easily configure a full-color light source by dimming each light emitting diode 2.

  Here, as described above, in the present embodiment, since each of the lead frame 1 and the holder case 5 is formed of a metal such as copper having high thermal conductivity, the heat generated by the light emitting diode 2 is generated in the lead frame. 1 can be transmitted to the holder case 5 through the heat sink 1, and can be radiated from the heat radiating portion 5C of the holder case 5 so that the heat radiation performance of the light emitting diode 2 is improved. In particular, since the heat radiating portion 5C having a large number of heat radiating fins 7 is provided on the outer surface of the holder case 5, the heat radiating performance is further improved, and the light emitting diode 2 having a high output is used. However, the light emitting diode 2 does not reach a high temperature when the current is high, and the luminance is not lowered.

In addition, by disposing an air-cooling fan for air-cooling the heat dissipating part 5C in the vicinity of the multilayer light emitting diode device 100, it is possible to further improve heat dissipation.
Further, by using a bare chip as the light emitting diode 2 and directly attaching the light emitting diode 2 to the lead frame 1 without interposing an insulating layer, the thermal resistance between the light emitting diode 2 and the lead frame 1 can be lowered. Further, the heat dissipation can be further improved.

  Specifically, in a conventional multilayer light emitting diode in which a lead frame and a light emitting diode are sealed with a transparent resin, the thermal resistance of the path from the light emitting diode to the outside air is as high as 150 to 200 ° C./W. In contrast, according to the present embodiment, the diameter of the annular portion 1A of the lead frame 1 is 40 mm, the thickness thereof is 3 mm, and the cylindrical holder case 5 having a length of 20 mm or more is deep. When the heat dissipating fins 7 of 2 mm are provided, the thermal resistance of the path from the coupling portion (attachment portion) between the light emitting diode 2 and the lead frame 1 to the outside air can be 20 ° C./W or less. Furthermore, it becomes possible to set it as 10 degrees C / W or less by using the forced air cooling of the holder case 5 together.

  As described above, when the lead frame 1 and the holder case 5 are formed of a metal material, there is a possibility that an electrical short circuit may occur between the units 10 when the reflective light emitting diode unit 10 is connected. In the present embodiment, since the units 10 are connected by the connecting material 4 made of an electrical insulating material, electrical insulation between the units 10 is achieved.

  Moreover, since the cylindrical member which is one aspect | mode of a hollow member was used as this connection material 4, the transparent member which exists on the radiation path | route of the light radiated | emitted from the reflection type light emitting diode unit 10 is shown in FIG. As shown, only the dichroic mirror 3 of the reflective light emitting diode unit 10 located in the preceding stage in the light emission direction P is provided. That is, when light passes through a substance, the light traveling direction is refracted due to the refractive index of the substance. In particular, in the case of parallel light, the parallel light component is reduced due to refraction. By making the thickness of the dichroic mirror 3 uniform, when the parallel light a radiated from the subsequent reflective light emitting diode 10 passes through the previous dichroic mirror 3, a large amount of parallel light component is added to the output light b. Can be included.

Next, the dichroic mirror 3 of the present embodiment will be described in more detail.
In general, the dichroic mirror 3 forms a dielectric multilayer film (for example, a TiO ₂ / SiO ₂ multilayer film) on the surface of a light-transmitting substrate by a deposition process such as vapor deposition, sputtering, or CVD (Chemical Vapor Deposition). An optical reflecting surface 3A having selectivity is configured. At this time, the wavelength selectivity of the dichroic mirror 3, that is, the relationship between the wavelength and the reflectance (transmittance) greatly depends on the number of layers of the dielectric multilayer film. That is, as shown in FIG. 8, when the number of dielectric multilayer films is small, the rise of the transmission band is gentle, and as the number of layers of the dielectric multilayer film is increased, the rise of the transmission band becomes steep. Therefore, in order to transmit light incident on the dichroic mirror 3 from the subsequent stage without loss (in order to reduce the reflection component), it is desirable to increase the number of dielectric multilayer films.

  However, in the conventional multilayer light emitting diode device, since the material of the reflection surface is made of a transparent resin such as epoxy resin, the number of layers of the dielectric multilayer film is reduced due to heat generation in the film formation process. Is limited to about 20 layers at the maximum, and the sudden rise of the transmission band cannot be realized, and the loss of light incident on the dichroic mirror 3 from the subsequent stage is large.

  On the other hand, in the present embodiment, as the base material of the dichroic mirror 3, glass having a melting point higher than that of the transmissive resin and capable of sufficiently withstanding heat generated during the film forming process is used. It is possible to increase the number of layers to 30 or more, which is larger than before. As a result, the dichroic mirror 3 having a sharp rise in transmission band is obtained, and transmission loss is suppressed.

  Then, by providing the reflection type light emitting diode unit 10 with the dichroic mirror 3 having a steep rising transmission band that transmits the radiation light from the subsequent stage of the light emission direction P, the stacked type light emitting diode device 100 is configured, for example, FIG. As shown in FIG. 9, the radiated light radiated from each stage passes through each of the dichroic mirrors 3 positioned in the preceding stage in the light emission direction P with less loss, and the efficiency of light output can be improved. it can.

  Next, the size relationship between the light emitting diode 2 and the dichroic mirror 3 will be described in detail. As shown in FIG. 10, when the size of the light emitting diode 2 is S, the diameter of the optical reflecting surface 3A of the dichroic mirror 3 is S1, and the focal length of the optical reflecting surface 3A is f, the light is emitted from the end of the light emitting diode 2. The incident light c1 incident on the optical reflection surface 3A at the incident angle θ1 is reflected at the reflection angle θ2 by the optical reflection surface 3A and becomes reflected light c2.

  At this time, when a chip such as a power LED having a size S of 1 mm or more is used as the light emitting diode 2, if the size of the dichroic mirror S1 is small, the focal length f is shortened, and both the incident angle θ1 and the reflection angle θ2 are wide. As a result, the light distribution characteristic is widened and the parallel light component is reduced. In particular, in the multilayer light emitting diode device 100, since the parallel light component of each reflective light emitting diode unit 10 is mainly radiated to the outside, the parallel light component is reduced in each reflective light emitting diode unit 10 as described above. Then, the light output of the whole multilayer light emitting diode device 100 is also reduced, and the efficiency is deteriorated.

  Therefore, in the present embodiment, the size S1 of the optical reflecting surface 3A of the dichroic mirror 3 is set to a size that is about 40 times or more the chip size (outer size) S of the light emitting diode 2 (that is, S1 / S ≧ 40). The focal length f is sufficiently increased. As a result, the incident angle θ1 and the reflection angle θ2 of the light c1 emitted from the end of the light emitting diode 2 are narrowed, and light having a large amount of parallel light components can be extracted as the reflected light c2. Further, in the reflection type light emitting diode unit 10 configured to satisfy S1 / S ≧ 40, a light distribution characteristic with a half-value angle of 2 degrees or less can be obtained, and the light output efficiency of the multilayer light emitting diode device 100 can be improved. It becomes possible to raise.

  Here, in the present embodiment, as shown in FIG. 2, the diffusion filter 9 is attached to the light emitting surface 2 </ b> A of the light emitting diode 2. More specifically, since the light emitting diode 2 is generally provided with an electrode for wiring (not shown) on the light emitting surface 2A, the light emission unevenness of the light source occurs due to the influence of this electrode, and the illuminance distribution during light emission The degree of uniformity decreases. Similarly, when a plurality of light emitting diodes 2 are densely mounted on the lead frame 1, a gap is formed between the light emitting diodes, and this gap causes uneven light emission, resulting in a decrease in the uniformity of the illuminance distribution.

Therefore, in this embodiment, in order to improve the uniformity of the illuminance distribution, the diffusion filter 9 is provided on the light emitting surface 2A of the light emitting diode 2, and the light emission unevenness of the light emitted from the light emitting diode 2 toward the dichroic mirror 3 is improved. After the improvement, the dichroic mirror 3 reflects the light.
With such a configuration, it is possible to suppress a decrease in the uniformity of the light emitted from each reflective light emitting diode unit 10.

In addition, although it is possible to suppress a decrease in the uniformity of the illuminance distribution even with a configuration in which a diffusion filter is provided on each of the light emitting surfaces of the reflective light emitting diode unit 10 or on the light emitting surface of the multilayer light emitting diode device 100, In this configuration, since the light reflected by the dichroic mirror 3 is diffused, the irradiation range is widened and the central luminous intensity is lowered.
On the other hand, according to the present embodiment, since the light emitted from the light emitting diode 2 toward the dichroic mirror 3 is diffused by the diffusion filter 9, it is possible to reduce the illuminance distribution while suppressing the spread of the irradiation range. The uniformity can be improved.

  As described above, according to the present embodiment, a plurality of reflection type light emitting diode units in which the light emitting diode 2 and the dichroic mirror 3 are arranged to face each other in a metal hollow holder case 5 having high thermal conductivity. 10 is connected via a connecting member 4 made of an electrically insulating material to form the stacked light emitting diode device 100. Therefore, the heat dissipation of the light emitting diode 2 can be increased, and the output can be increased. The electrical insulation between the units 10 can be enhanced.

In addition, according to the present embodiment, the light emitting diode 2 is attached to the lead frame 1 formed of a high thermal conductivity material, and the lead frame 1 is attached to the holder case 5, so that the heat generated by the light emitting diode 2 is lead. It can be transmitted to the holder case 5 via the frame 1 and efficiently radiated from the holder case 5.
In particular, according to the present embodiment, since the heat radiating fins 5B are formed on the outer surface of the holder case 5, the heat dissipation can be further improved.

  In addition, according to the present embodiment, since the focal length adjusting spacer 8 for adjusting the focal position of the dichroic mirror 3 to the arrangement position of the light emitting diode 2 is provided between the lead frame 1 and the dichroic mirror 3, the light emission. Even if the chip height is different for each diode 2, the distance from the light emitting diode 2 (light emitting surface 2A) to the optical reflecting surface 3A can be kept constant, and the light distribution characteristics and illuminance distribution can be reflected in each reflection. Can be made uniform among the light emitting diode units 10.

  Further, according to the present embodiment, since the diffusion filter 9 is provided between the light emitting diode 2 and the dichroic mirror 3, the spread of the light irradiation range emitted from the reflective light emitting diode unit 10 is suppressed, and The uniformity of the illuminance distribution can be improved.

  In addition, according to the present embodiment, since the dichroic mirror 3 is configured to use a mirror formed by forming a dielectric multilayer film having a predetermined number of layers or more on the surface of the glass substrate, the number of layers of the dielectric multilayer film is conventionally increased. (For example, 30 layers or more). As a result, the dichroic mirror 3 having a sharp rise in the transmission band can be obtained, light transmission loss can be suppressed, and the efficiency of light output can be increased.

  Further, according to the present embodiment, since the diameter S1 of the dichroic mirror 3 is set to be 40 times or more the outer size S of the light emitting diode 2, it is emitted from the end of the light emitting diode 2 and enters the dichroic mirror 3. By narrowing the incident angle θ1 and the reflection angle θ2 of the light c1, it is possible to extract light having many parallel light components as the reflected light c2.

  In addition, according to the present embodiment, the optical reflecting surface 3A of the dichroic mirror 3 is formed into an aspherical shape or a parabolic shape with the light emitting diode 2 as a focal point, so that the reflected light is collimated and the holder case 5 can efficiently radiate externally.

The above-described embodiment is merely an aspect of the present invention, and can be arbitrarily modified and applied within the scope of the present invention.
For example, in the above-described embodiment, the holder case 5 may be configured to be filled with an inert gas, and the light emitting diode 2 or the like may be prevented from being deteriorated due to corrosion or the like.

Further, for example, in the above-described embodiment, a reflective film is provided on the back surface of the dichroic mirror 3 so as to reflect the light that has been transmitted without being reflected by the optical reflecting surface 3A on the front surface side. It is good also as a structure which aims at high efficiency.
Further, an antireflection film for preventing reflection of the light is transmitted on the back surface of the dichroic mirror 3 so that the light emitted from the subsequent reflection type light emitting diode unit 10 can be transmitted without loss, thereby improving the efficiency of light output. It is good also as a structure which aims at.

In addition, for example, in the above-described embodiment, three reflective light emitting diode units 10 are connected to configure the stacked light emitting diode device 100. However, the present invention is not limited to this, and the reflective light emitting diode units 10 to be connected (stacked) The number may be two, or four or more.
In particular, six reflective light emitting diode units 10 are connected, each of which is blue (wavelength 470 nm), green (wavelength 525 nm), yellow-green (wavelength 570 nm), yellow (wavelength 590 nm), red yellow (wavelength 605 nm), red By adopting a configuration that emits light of different central wavelengths (wavelength 660 nm), a wider hue can be expressed than when three light sources of blue, red, and green are combined.

  The multilayer light emitting diode device 100 according to the present invention can be applied to, for example, a light source for a projector, a large full-color display panel, an optical fiber light source for industrial and medical use, and the like.

Further, as shown in FIG. 11, by attaching a photodiode 20 to the lead frame 1 instead of the light emitting diode 2, only light in a specific wavelength region reflected by the dichroic mirror 3 is detected (received by the photodiode 20). The reflection type photodiode unit 30 can be applied. Furthermore, it is also possible to configure a stacked photodiode device 200 in which a plurality of reflective photodiode units 30 are connected to detect light of different wavelengths in each layer (each stage).
For example, it is possible to realize a multiplexed optical communication device using light of different wavelengths by using the stacked light emitting diode device 100 as an optical signal transmitter and the stacked photodiode device 200 as an optical signal receiver.

It is a figure which shows the front and side surface of the multilayer light emitting diode device which concern on embodiment of this invention. It is sectional drawing of a laminated type light emitting diode apparatus. It is a disassembled perspective view of a light emitting diode unit. It is a figure which shows the front of a lead frame, a side surface, and a back surface. It is a figure which shows the front and side of a holder case. It is a figure which shows the front and side surface of a dichroic mirror. It is a figure which shows the aspect of the optical path which passes a hollow connection material. It is a figure which shows the relationship between the number of layers of the dielectric multilayer film layer of a dichroic mirror, and an optical characteristic. It is a figure which shows the optical characteristic of each dichroic mirror of a light emitting diode unit. It is a figure for demonstrating the relationship of the size of a light emitting diode and a dichroic mirror. It is a figure which shows the example of application of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Lead frame 2 Light emitting diode 2A Light emitting surface 3 Dichroic mirror 3A Optical reflecting surface 4 Connecting material 5 Holder case 7 Radiation fin 8 Focal length adjustment spacer 9 Diffusion filter 10 Reflective light emitting diode unit 100 Multilayer light emitting diode device

Claims (8)

A light emitting element and a dichroic mirror are disposed opposite to each other in a metal hollow holder case having high thermal conductivity, and the light emitting element is attached to a lead frame formed of a high thermal conductive material, and the lead frame is attached to the holder case. A multilayer light emitting diode device comprising a plurality of attached reflection type light emitting diode units connected via a connecting member made of an electrically insulating material. 2. The stacked light emitting diode according to claim 1 , wherein an adjustment spacer is provided between the lead frame and the dichroic mirror for adjusting a focal position of the dichroic mirror to an arrangement position of the light emitting element. apparatus. Stacked-type light-emitting diode device according to claim 1 or 2, characterized in that a diffusion filter between the dichroic mirror and the light emitting element. The dichroic mirror is on the surface of a glass substrate, a stacked light emitting diode device according to any one of claims 1 to 3, characterized in that by forming a predetermined layer number more dielectric multi-layer film. The dichroic diameter of dichroic mirror, stacked-type light-emitting diode device according to any one of claims 1 to 4, characterized in that not less than 40 times the external size of the light emitting element. It said dichroic optical reflecting surface of the dichroic mirror, stacked-type light-emitting diode device according to any one of claims 1 to 5, characterized in that the aspherical shape or paraboloidal shape to focus the position of the light emitting element . Wherein the plurality of reflection type light emitting diode each light emitting diode stacked-type light-emitting diode device according to any one of claims 1 to 6, characterized in that emit light of different center wavelengths are in the unit. In the reflection type light emitting diode unit that reflects the light of the light emitting element by the reflecting mirror and radiates outside,
The light emitting element and the reflecting mirror are disposed opposite to each other in a metal hollow holder case having high thermal conductivity, and the light emitting element is attached to a lead frame formed of a high thermal conductive material, and the lead frame is attached to the holder. A reflection type light emitting diode unit, which is attached to a case and configured to be connectable to another reflection type light emitting diode unit through a connection material made of an electrically insulating material.

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