JP4942125B2 - Ozone treatment system - Google Patents
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- JP4942125B2 JP4942125B2 JP2001226042A JP2001226042A JP4942125B2 JP 4942125 B2 JP4942125 B2 JP 4942125B2 JP 2001226042 A JP2001226042 A JP 2001226042A JP 2001226042 A JP2001226042 A JP 2001226042A JP 4942125 B2 JP4942125 B2 JP 4942125B2
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【０００１】
【発明の属する技術分野】
本発明は、半導体製造プロセス又は液晶製造プロセスに使用されるオゾン処理システム、特にオゾン水を用いたオゾン処理システムに関する。
【０００２】
【従来の技術】
近時、半導体製造プロセスにおいては、ウエーハの洗浄処理にオゾン水が使用され始めた。また液晶製造プロセスにおいても、ガラス基板の洗浄処理にオゾン水が使用され始めた。このようなオゾン水を用いた従来の洗浄システムを図２により説明する。
【０００３】
オゾン水を用いた洗浄システムでは、スペース的な制約、特に、オゾン水のユースポイントであり高いクリーン度が要求されるオゾン処理装置２０の装置規模を小さく抑制する観点から、オゾン水を製造するオゾン水製造装置１０をオゾン処理装置２０から分離して設置するのが通例になっている。
【０００４】
オゾン水製造装置１０では、放電式のオゾナイザ１１により酸素ガスを原料としてオゾンを発生させ、そのオゾンをオゾン溶解器１２に送って純水又は超純水に溶解させ、オゾン水を製造する。オゾン溶解器１２で製造されたオゾン水は、オゾン水製造装置１０から離れた場所に設置されたオゾン処理装置２０にオゾン水配管３０を通して送給される。
【０００５】
オゾン処理装置２０では、オゾン水が洗浄槽２１に送られ、ここで半導体ウエーハや液晶用ガラス基板が洗浄される。オゾン処理装置２０においては、前述したとおり高いクリーン度が要求される。
【０００６】
【発明が解決しようとする課題】
このような半導体ウエーハ用洗浄システム又は液晶用ガラス基板用洗浄システムでは、オゾン水のユースポイントであるオゾン処理装置２０からオゾン水製造装置１０が離れていることに起因して、以下の問題がある。
【０００７】
オゾン水製造装置１０でオゾン水が製造され、オゾン水配管３０を通してユースポイントであるオゾン処理装置２０へ移送されるが、ユースポイントまでの配管移送途中にオゾン水中の溶存オゾンが分解し、オゾン水のオゾン濃度が低下する。
【０００８】
この濃度減衰のため、ユースポイントで要求される溶存オゾン濃度より高い濃度のオゾン水をオゾン水製造装置１０で製造することが必要になり、オゾン水製造装置１０のグレードアップ、具体的にはオゾナイザ１１の高性能化及びオゾン溶解器１２の容量アップが必要になり、設備費の高騰を余儀なくされる。
【０００９】
また、オゾン水製造装置１０とオゾン処理装置２０の位置関係によっては、必要なオゾン濃度を確保できないおそれさえある。
【００１０】
配管移送に伴うオゾン濃度減衰の問題は、使用する水の清浄度が高まるにつれて顕著となり、その清浄度が急速に向上している現状では、この濃度減衰が各種の処理システムで大きな問題となることが予想される。
【００１１】
なお、この濃度減衰の問題を解決する方法として、水中にＴＯＣ成分や炭酸ガス、酸薬液を添加する方法がある（特開２０００−２６２８７４号公報及び特開２０００−３７６９５号公報）。しかし、いずれの方法も、水の清浄度を上げる最重要方針に逆行すること、添加物の洗浄プロセス等への影響が不明であること、オゾン水製造装置が複雑化することなどの理由から、清浄度が要求される洗浄処理システム等においては現実的でない。
【００１２】
また、紫外線照射器を内蔵している超純水製造装置から供給される超純水を原料としている場合は、超純水製造装置での紫外線の照射量が過剰にならないように照射量を制限して濃度減衰を抑制することが、特開２０００−３０２４１３号公報により提案されているが、紫外線照射器を内蔵している超純水製造装置から供給される超純水自体、清浄度が高く、製造されたオゾン水の濃度減衰が顕著である。また、基本的な方針が清浄度の低下にあり、清浄度を上げる方針に逆行することが問題である。
【００１３】
本発明の目的は、オゾン水のユースポイントであるオゾン処理装置の規模増大を可及的に回避でき、しかも、使用する原料水の清浄度を低下させることなく、オゾン水の濃度減衰を効果的に抑制できるオゾン処理システムを提供することにある。
【００１４】
【課題を解決するための手段】
上記目的を達成するために、本発明のオゾン処理システムは、半導体ウエーハ又は液晶用ガラス基板に対してオゾン水を使用して洗浄処理等のオゾン処理を行うオゾン処理装置と、オゾン処理装置から離れた、オゾン処理装置外で且つオゾン処理装置内より要求クリーン度が低い場所に設置され、前記オゾン水の製造に使用されるオゾンガスを発生させるオゾナイザと、オゾナイザで発生させたオゾンガスをガス状態のままオゾン処理装置へ移送するガス配管と、オゾン処理装置内に設置され、当該処理装置へ移送されたオゾンガスを、当該処理装置外から当該処理装置内へ導入された原料水に溶解させて、オゾン処理用のオゾン水を製造するオゾン溶解器とを具備している。
【００１５】
オゾンガスはオゾン水に比べ濃度減衰が小さく、ユースポイントであるオゾン処理装置の設置場所による影響を軽減できる。オゾン濃度の減衰は経時的な現象である。オゾン水に比べオゾンガスは配管抵抗が小さく、移送距離を長くでき、移送距離を同じとすれば移送時間を短縮でき、この点からも濃度減衰を抑制できる。
【００１６】
代表的なモデルケースについて説明すると、オゾン濃度が３０ｍｇ／Ｌのオゾン水を１８Ｌ／ｍｉｎで１１ｍ離れた場所へ供給する場合、移送時間は６秒かかり、オゾン水のオゾン濃度は３０ｍｇ／Ｌから２６ｍｇ／Ｌへ１３％低下する。一方、オゾン濃度が１００ｇ／ｍ3 （Ｎ）のオゾンガスを３Ｌ／ｍｉｎ（Ｎ）（配管内流速３．３６ｍ／ｓ）で１３．５ｍ離れた場所へ供給する場合、移送時間は４秒であり、オゾンガスのオゾン濃度は１００ｇ／ｍ3 （Ｎ）から９６ｇ／ｍ3 （Ｎ）へ４％低下するだけとなる。オゾン水のオゾン濃度はオゾンガスのオゾン濃度と比例関係にあるので、オゾン水を製造するオゾンガスのオゾン濃度が４％低下すれば、オゾン水のオゾン濃度も４％低下するだけとなる。よって、１３．５ｍ離れた場所までオゾンガスを移送してオゾン水を製造した場合は、オゾン水の濃度減衰は４％で済むことになる。更に、オゾンガスは配管内流速が３．３６ｍ／ｓでも、配管による圧力降下が少ないため、ガス流量を増やして移送時間を短くすることができ、濃度減衰を更に抑制することが可能となる。
【００１７】
また、オゾナイザをオゾン処理装置から分離したことにより、オゾン処理装置の規模増大が可及的に抑制される。
【００１８】
本発明のオゾン処理システムは、オゾン水の濃度減衰が顕著となる、使用水の清浄度が高い場合、及びオゾン処理装置に付帯するオゾナイザ等の付帯装置の設置場所がオゾン処理装置から遠く離反する場合に特に有効である。
【００１９】
【発明の実施の形態】
以下に本発明の実施形態を図面に基づいて説明する。図１は本発明の一実施形態を示すオゾン処理システムの構成図である。
【００２０】
本実施形態のオゾン処理システムは、オゾン水により半導体ウエーハや液晶用ガラス基板を洗浄処理する洗浄システムである。このオゾン処理システムは、オゾン水を使用して洗浄処理を行うオゾン処理装置２０と、オゾン水の製造に使用されるオゾンガスを生成する放電式のオゾナイザ１１とに分けて設置されている。
【００２１】
放電式のオゾナイザ１１は、オゾン処理装置２０から離れた付帯装置の設置スペース（例えばメンテナンススペース）に設置され、酸素ガスを原料としてオゾンを発生させる。そのオゾンガスは、オゾナイザ１１から離れた場所に設置されたオゾン処理装置２０にオゾンガス配管４０を通して送給される。付帯装置の設置スペース（例えばメンテナンススペース）は、オゾン処理装置２０内ほどのクリーン度は要求されない。
【００２２】
オゾン処理装置２０は、オゾン水による洗浄を行う洗浄槽２１と、オゾナイザ１１から移送されるオゾンガスを使用してオゾン水を製造するオゾン溶解器２２とを備えている。オゾン溶解器２２は、洗浄槽２１の近傍に設置されており、当該オゾン処理装置２０の外部から導入される原料水（純水又は超純水）にオゾンを溶解させてオゾン水を製造し、これを洗浄槽２１に送る。これにより、洗浄槽２１で半導体ウエーハや液晶用ガラス基板が洗浄される。
【００２３】
本実施形態のオゾン処理システムでは、オゾン水を製造するオゾン溶解器２２がオゾン処理装置２０内の洗浄槽２１近傍に設置されている。このため、オゾン溶解器２２から洗浄槽２１へオゾン水を移送するオゾン水配管は非常に短く、ここにおけるオゾン水の濃度減衰は無視できる程度に軽微である。
【００２４】
一方、オゾナイザ１１で生成したオゾンガスをオゾン溶解器２２へ移送するガス移送配管４０は、オゾン処理装置２０から付帯装置の設置スペース（例えばメンテナンススペース）までの距離に応じて長くなるが、オゾンガスの濃度減衰は、オゾン水の濃度減衰に比べると僅かである。
【００２５】
これらのため、製造するオゾン水の濃度及び流量を従来と同じとすれば、オゾナイザ１１の性能低下が可能になる。また、オゾン溶解器２２の容量低減が可能になる。オゾン溶解器２２を設けることによりオゾン処理装置２０が大型化するが、オゾン溶解器１２の容量が低減されることを考慮すると、オゾン処理装置２０の大型化は大きな問題にはならない。むしろ、オゾナイザ１１の小型化及びオゾン溶解器２２の容量低減により、システム全体として大きな設備上の経済的メリットが得られる。
【００２６】
オゾン処理装置２０で必要とするオゾン水の濃度及び流量を１０ｍｇ／Ｌ及び１５Ｌ／ｍｉｎとし、オゾナイザ１１からオゾン処理装置２０までの配管距離を１０ｍとした場合、図２に示す従来のオゾン処理システムと比べ、オゾナイザ１１の性能は２／３に、またオゾン溶解器１２の容量も２／３に低減することが可能となる。
【００２７】
一方、図２に示す従来のオゾン処理システムにおいて、そのオゾナイザ及びオゾン溶解器に上記実施形態と同等のものを使用すると、製造されるオゾン水の濃度は７ｍｇ／Ｌに低下する。上記実施形態と同等のオゾン水を製造しようとすると、オゾナイザの性能及びオゾン溶解器の容量は１．５倍に増大する必要がある。
【００２８】
なお、上記実施形態は半導体ウエーハ、液晶用ガラス基板の洗浄処理システムであるが、これらの洗浄処理以外にも例えば酸化膜形成や親水化といった表面酸化処理システム等に適用可能である。
【００２９】
【発明の効果】
以上に説明したとおり、本発明のオゾン処理システムは、オゾナイザで発生させたオゾンガスをガス状態のまま、ユースポイントであるオゾン処理装置へ移送し、オゾン処理装置内でオゾン溶解器を用いてオゾン水を製造することにより、オゾン水の濃度減衰を抑制できるので、付帯装置の設置場所がオゾン処理装置から離れている場合にも、そのオゾン処理装置に所望濃度のオゾン水を経済的に供給することができる。また、オゾナイザを付帯装置としてオゾン処理装置から分離し、オゾン処理装置内より要求クリーン度が低い場所に配置したことにより、オゾン処理装置の規模増大を可及的に回避することができる。
【図面の簡単な説明】
【図１】本発明の一実施形態を示すオゾン処理システムの構成図である。
【図２】従来のオゾン処理システムの構成図である。
【符号の説明】
１０ オゾン水製造装置
１１ オゾナイザ
１２ オゾン溶解器
２０ オゾン処理装置
２１ 洗浄槽
２２ オゾン溶解器
３０ オゾン水配管
４０ オゾンガス配管[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an ozone processing system used in a semiconductor manufacturing process or a liquid crystal manufacturing process, and more particularly to an ozone processing system using ozone water.
[0002]
[Prior art]
Recently, ozone water has begun to be used for wafer cleaning in semiconductor manufacturing processes. Also, in the liquid crystal manufacturing process, ozone water has begun to be used for glass substrate cleaning. A conventional cleaning system using such ozone water will be described with reference to FIG.
[0003]
In the cleaning system using ozone water, the ozone which produces ozone water from the viewpoint of restraining the space of the ozone treatment apparatus 20 which is a use point of the ozone water, especially the ozone treatment apparatus 20 which requires a high degree of cleanness is small. It is customary to install the water production apparatus 10 separately from the ozone treatment apparatus 20.
[0004]
In the ozone water production apparatus 10, ozone is generated by using a discharge type ozonizer 11 using oxygen gas as a raw material, and the ozone is sent to an ozone dissolver 12 to be dissolved in pure water or ultrapure water to produce ozone water. The ozone water produced by the ozone dissolver 12 is fed through the
[0005]
In the ozone processing apparatus 20, ozone water is sent to the cleaning tank 21, where the semiconductor wafer and the glass substrate for liquid crystal are cleaned. In the ozone processing apparatus 20, a high cleanliness is required as described above.
[0006]
[Problems to be solved by the invention]
In such a semiconductor wafer cleaning system or a liquid crystal glass substrate cleaning system, the ozone water production apparatus 10 is separated from the ozone treatment apparatus 20 which is a point of use of ozone water. .
[0007]
Ozone water is produced by the ozone water production apparatus 10 and is transferred to the ozone treatment apparatus 20 that is a use point through the
[0008]
Because of this concentration attenuation, it is necessary to produce ozone water with a concentration higher than the dissolved ozone concentration required at the point of use with the ozone water production apparatus 10, and upgrade of the ozone water production apparatus 10, specifically, an ozonizer 11 and higher capacity of the ozone dissolver 12 are required, and the equipment cost is inevitably increased.
[0009]
Further, depending on the positional relationship between the ozone water production apparatus 10 and the ozone treatment apparatus 20, there is a possibility that a necessary ozone concentration cannot be ensured.
[0010]
The problem of ozone concentration attenuation that accompanies pipe transfer becomes more pronounced as the cleanliness of the water used increases, and this concentration attenuation becomes a major problem in various treatment systems in the present situation where the cleanliness is rapidly improving. Is expected.
[0011]
As a method for solving the problem of concentration attenuation, there is a method of adding a TOC component, carbon dioxide gas, or an acid chemical solution to water (Japanese Patent Laid-Open Nos. 2000-262874 and 2000-37695). However, either method goes against the most important policy to increase the cleanliness of water, the influence of additives on the washing process, etc. is unclear, and the ozone water production equipment is complicated. It is not realistic in a cleaning processing system or the like that requires cleanliness.
[0012]
In addition, when using ultrapure water supplied from an ultrapure water production system with a built-in UV irradiator as a raw material, the irradiation amount is limited so that the amount of UV irradiation in the ultrapure water production system does not become excessive. In order to suppress concentration attenuation, Japanese Patent Application Laid-Open No. 2000-302413 has proposed, but ultrapure water itself supplied from an ultrapure water production apparatus incorporating an ultraviolet irradiator has high cleanliness. The concentration attenuation of the produced ozone water is remarkable. In addition, the basic policy is to reduce the cleanliness, and it is a problem to go against the policy of increasing the cleanliness.
[0013]
The object of the present invention is to avoid as much as possible the increase in the scale of ozone treatment equipment, which is a point of use for ozone water, and to effectively reduce the concentration of ozone water without reducing the cleanliness of the raw material water used. Another object is to provide an ozone treatment system that can be suppressed.
[0014]
[Means for Solving the Problems]
In order to achieve the above object, an ozone treatment system of the present invention is separated from an ozone treatment apparatus that performs ozone treatment such as cleaning treatment on a semiconductor wafer or a glass substrate for liquid crystal using ozone water, and the ozone treatment apparatus. In addition, an ozone generator that generates ozone gas used for the production of the ozone water, and an ozone gas generated by the ozonizer in a gas state are installed outside the ozone processing apparatus and in a place where the required cleanliness is lower than in the ozone processing apparatus. Ozone treatment by dissolving the ozone gas transferred from the outside of the processing apparatus to the raw material water introduced into the processing apparatus by the gas piping to be transferred to the ozone processing apparatus and the ozone gas transferred to the processing apparatus. And an ozone dissolver for producing ozone water.
[0015]
The concentration of ozone gas is smaller than that of ozone water, and the influence of the location of the ozone treatment device, which is a use point, can be reduced. The decay of ozone concentration is a phenomenon over time. Compared with ozone water, ozone gas has a smaller pipe resistance, can be made longer in the transfer distance, and if the transfer distance is the same, the transfer time can be shortened, and concentration attenuation can be suppressed from this point.
[0016]
To explain a typical model case, when supplying ozone water with an ozone concentration of 30 mg / L to a place 11 m away at 18 L / min, the transfer time takes 6 seconds, and the ozone concentration of ozone water is from 30 mg / L to 26 mg. / L decreases to 13%. On the other hand, when ozone gas with an ozone concentration of 100 g / m 3 (N) is supplied to a place 13.5 m away at 3 L / min (N) (flow velocity in the pipe 3.36 m / s), the transfer time is 4 seconds. The ozone concentration of ozone gas is only 4% lower from 100 g / m 3 (N) to 96 g / m 3 (N). Since the ozone concentration of ozone water is proportional to the ozone concentration of ozone gas, if the ozone concentration of ozone gas for producing ozone water decreases by 4%, the ozone concentration of ozone water only decreases by 4%. Therefore, when ozone gas is transferred to a place distant from 13.5 m to produce ozone water, the concentration attenuation of ozone water is only 4%. Furthermore, since ozone gas has a small pressure drop due to the piping even when the flow velocity in the piping is 3.36 m / s, the gas flow rate can be increased to shorten the transfer time, and the concentration attenuation can be further suppressed.
[0017]
Further, by separating the ozonizer from the ozone treatment apparatus, an increase in the scale of the ozone treatment apparatus is suppressed as much as possible.
[0018]
In the ozone treatment system of the present invention, the concentration of ozone water becomes noticeable, the cleanliness of the used water is high, and the installation location of an accessory device such as an ozonizer attached to the ozone treatment device is far away from the ozone treatment device. It is especially effective in cases.
[0019]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a configuration diagram of an ozone treatment system showing an embodiment of the present invention.
[0020]
The ozone processing system of this embodiment is a cleaning system that cleans a semiconductor wafer or a liquid crystal glass substrate with ozone water. This ozone treatment system is divided into an ozone treatment device 20 that performs a cleaning treatment using ozone water and a discharge type ozonizer 11 that generates ozone gas used for the production of ozone water.
[0021]
The discharge type ozonizer 11 is installed in an installation space (for example, a maintenance space) of an auxiliary device that is separated from the ozone treatment device 20, and generates ozone using oxygen gas as a raw material. The ozone gas is fed through the ozone gas pipe 40 to the ozone treatment device 20 installed at a location away from the ozonizer 11. The installation space (for example, maintenance space) of the incidental device is not required to be as clean as the ozone treatment device 20.
[0022]
The ozone treatment apparatus 20 includes a cleaning tank 21 that performs cleaning with ozone water, and an ozone dissolver 22 that manufactures ozone water using ozone gas transferred from the ozonizer 11. The ozone dissolver 22 is installed in the vicinity of the cleaning tank 21, and produces ozone water by dissolving ozone in raw water (pure water or ultrapure water) introduced from the outside of the ozone treatment apparatus 20 , This is sent to the washing tank 21. As a result, the semiconductor wafer and the liquid crystal glass substrate are cleaned in the cleaning tank 21.
[0023]
In the ozone treatment system of the present embodiment, an ozone dissolver 22 for producing ozone water is installed in the vicinity of the cleaning tank 21 in the ozone treatment apparatus 20. For this reason, the ozone water piping for transferring the ozone water from the ozone dissolver 22 to the cleaning tank 21 is very short, and the concentration attenuation of the ozone water here is negligibly small.
[0024]
On the other hand, the gas transfer pipe 40 for transferring the ozone gas generated by the ozonizer 11 to the ozone dissolver 22 becomes longer depending on the distance from the ozone treatment device 20 to the installation space (for example, maintenance space) of the auxiliary device, but the concentration of ozone gas. The attenuation is slight compared to the concentration attenuation of ozone water.
[0025]
For these reasons, the performance of the ozonizer 11 can be reduced if the concentration and flow rate of the ozone water to be produced are the same as the conventional one. Further, the capacity of the ozone dissolver 22 can be reduced. Although providing the ozone dissolver 22 increases the size of the ozone treatment apparatus 20, considering that the capacity of the ozone dissolver 12 is reduced, increasing the size of the ozone treatment apparatus 20 is not a big problem. Rather, the downsizing of the ozonizer 11 and the reduction in the capacity of the ozone dissolver 22 can provide a significant economic advantage in terms of equipment as a whole system.
[0026]
When the ozone water concentration and flow rate required by the ozone treatment apparatus 20 are 10 mg / L and 15 L / min, and the piping distance from the ozonizer 11 to the ozone treatment apparatus 20 is 10 m, the conventional ozone treatment system shown in FIG. As compared with the above, the performance of the ozonizer 11 can be reduced to 2/3, and the capacity of the ozone dissolver 12 can be reduced to 2/3.
[0027]
On the other hand, in the conventional ozone treatment system shown in FIG. 2, if the ozonizer and the ozone dissolver are equivalent to those in the above embodiment, the concentration of the produced ozone water is reduced to 7 mg / L. If it is going to manufacture ozone water equivalent to the said embodiment, the performance of an ozonizer and the capacity | capacitance of an ozone dissolver need to increase 1.5 time.
[0028]
In addition, although the said embodiment is a semiconductor wafer and the washing | cleaning processing system of the glass substrate for liquid crystals, it is applicable to the surface oxidation processing system etc., such as oxide film formation and hydrophilization other than these washing | cleaning processes.
[0029]
【Effect of the invention】
As described above, the ozone treatment system of the present invention transfers the ozone gas generated by the ozonizer in the gaseous state to the ozone treatment device that is the point of use, and uses the ozone dissolver in the ozone treatment device. Since the concentration of ozone water can be suppressed by manufacturing the ozone treatment device, it is possible to economically supply the ozone treatment device with the desired concentration even when the installation location of the accessory device is far from the ozone treatment device. Can do. Further, by separating the ozonizer from the ozone treatment apparatus as an accessory device and arranging the ozonizer in a place where the required cleanliness is lower than in the ozone treatment apparatus, an increase in the scale of the ozone treatment apparatus can be avoided as much as possible.
[Brief description of the drawings]
FIG. 1 is a configuration diagram of an ozone treatment system showing an embodiment of the present invention.
FIG. 2 is a configuration diagram of a conventional ozone treatment system.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 Ozone water production apparatus 11 Ozonizer 12 Ozone dissolver 20 Ozone treatment apparatus 21 Cleaning tank 22
Claims (1)
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| Application Number | Priority Date | Filing Date | Title |
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| JP2001226042A JP4942125B2 (en) | 2001-07-26 | 2001-07-26 | Ozone treatment system |
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| JP2001226042A JP4942125B2 (en) | 2001-07-26 | 2001-07-26 | Ozone treatment system |
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| JP4942125B2 true JP4942125B2 (en) | 2012-05-30 |
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| JP4513122B2 (en) * | 2004-03-31 | 2010-07-28 | 栗田工業株式会社 | Ozone water supply method and ozone water supply device |
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| US5812403A (en) * | 1996-11-13 | 1998-09-22 | Applied Materials, Inc. | Methods and apparatus for cleaning surfaces in a substrate processing system |
| JP4108798B2 (en) * | 1997-11-06 | 2008-06-25 | 栗田工業株式会社 | Ozone-containing ultrapure water supply method and ozone-containing ultrapure water supply device |
| JP3381250B2 (en) * | 1998-11-16 | 2003-02-24 | 栗田工業株式会社 | Gas dissolving cleaning water flow pipe |
| JP3333149B2 (en) * | 1999-07-05 | 2002-10-07 | アルプス電気株式会社 | Gas dissolved water production apparatus, gas dissolved water production method, and cleaning apparatus |
| JP2001070770A (en) * | 1999-09-08 | 2001-03-21 | Seiwa Kagaku:Kk | Ozone water generating device |
| JP2001079502A (en) * | 1999-09-10 | 2001-03-27 | Seiko Epson Corp | Cleaning method and device with ozonized-water |
| JP4587111B2 (en) * | 2000-04-06 | 2010-11-24 | 栗田工業株式会社 | Ozone dissolved water supply device |
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