JP4892886B2 - Solid-state imaging device and imaging apparatus - Google Patents

Description

  The present invention relates to a solid-state image sensor that captures an image of a subject using a photoelectric conversion element and an image pickup apparatus using the solid-state image sensor, and in particular, an improved optical filter that performs color separation and the like of light incident on the photoelectric conversion element. The present invention relates to a solid-state imaging device and an imaging apparatus that can effectively prevent unauthorized incident light on a reference optical black (OPB).

Conventionally, in a solid-state imaging device such as a CCD image sensor or a CMOS image sensor, when processing an imaging signal read by a photodiode in a pixel array unit, the luminance level of the imaging signal is adjusted, so that it is originally effective to shoot a subject. In addition to the pixel area, a dummy pixel having a structure common to the effective pixel area is provided, and this is shielded by a light shielding film made of a metal film to form a light shielding pixel area, and by detecting its output signal, a black reference signal is obtained. It comes to use. This light-shielded pixel region is called a so-called optical black (OPB).
This light-shielding pixel region is preferably provided in the vicinity of the effective pixel region because it is preferable to detect the black reference signal with the same characteristics as the pixel that actually captures as much as possible. By assigning multiple pixel columns along the line, or by providing multiple pixel blocks distributed around the effective pixel area, it is possible to obtain an accurate black reference that corrects variations in characteristics within the pixel array section. ing.
In addition, there has been proposed a film having a low transmittance disposed on the upper surface and the end of such an OPB light-shielding film to limit incident light and prevent unnecessary light from entering and reflecting ( For example, see Patent Documents 1 and 2).
Japanese Patent Laid-Open No. 3-148868 JP-A-10-112533

However, in the structure in which the light shielding film is arranged on the pixel array portion as described above to form the light shielding pixel region, the light incident on the effective pixel region enters the lower surface of the light shielding film and enters the photodiode on the light shielding pixel side, It becomes a false signal and the black reference is shifted to the white side.
In particular, in the CMOS image sensor, because the light shielding film is formed using the uppermost layer film of the wiring layer due to the structure in which the wiring layer is arranged on the photodiode, the distance between the light shielding film and the photodiode is increased, Further, since the wiring film is disposed in the middle, the light incident on the effective pixel region easily enters the light-shielding pixel side by diffraction or reflection.
For this reason, when strong light is incident in the vicinity of the light-shielding pixel, there is a problem that an illegal false signal is generated or a phenomenon in which color reproduction is deteriorated. In particular, in the case of long wavelength light, since the incident depth is large, the possibility of reaching the light-shielding pixel side is increased.
In contrast, conventionally, as disclosed in the above-mentioned patent document, a low-transmittance film is disposed on the light-shielding film or at the end, but from the effective pixel region side by diffraction or reflection, it is below the light-shielding film. It is not a measure against incoming light.
For this reason, for example, it is conceivable to secure a sufficient space (boundary region) between the effective pixel region and the light-shielding pixel region to prevent unauthorized light from entering from the effective pixel region side to the light-shielding pixel region side. However, the area of the pixel array portion becomes large, and there arises a problem that miniaturization of the image sensor is hindered.

  Therefore, the present invention provides a solid-state imaging device and an imaging apparatus capable of appropriately preventing illegal light from entering a light-shielded pixel region and obtaining an accurate black reference while suppressing an increase in size of a pixel array unit. For the purpose.

In order to achieve the above-described object, the solid-state imaging device of the present invention has a plurality of pixels that generate signal charges corresponding to the amount of light incident on the light receiving surface arranged in a two-dimensional direction, and is an effective pixel used for imaging a subject. A pixel array unit having a region, a light-shielded pixel region for obtaining a black reference signal disposed in the vicinity of the effective pixel region, and a boundary region disposed between the effective pixel region and the light-shielded pixel region; A plurality of pixels disposed on a light-shielding pixel region of the pixel array portion via an insulating film, and disposed on the pixel array portion and the light-shielding film via an insulating film. An optical filter that limits the wavelength component of light incident on each pixel, and the optical filter includes an effective portion corresponding to the effective pixel region, and an ineffective portion corresponding to the boundary region and the light-shielding pixel region. Have Was placed to suppress light entering suppression filter the passage of long wavelength light of at least the visible light to the optical filter disposed part.
The optical filter is a red, green, and blue three primary color filter, the light incident suppression filter is a filter in which the red filter and the blue filter of the three primary color filter are superimposed, and the blue filter is disposed on the upper layer of the red filter. The red filter and the blue filter of the light incident suppression filter are formed up to the middle position of the boundary region of the pixel array portion, and the blue filter is formed to a position closer to the effective portion side than the red filter.

In the solid-state imaging device of the present invention, a plurality of pixels that generate signal charges according to the amount of light incident on the light receiving surface are arranged in a two-dimensional direction, and an effective pixel region used for imaging a subject and the effective pixels A pixel array unit having a light-shielded pixel region for obtaining a black reference signal disposed in the vicinity of the region, a boundary region disposed between the effective pixel region and the light-shielded pixel region, and on the pixel array unit A wiring layer disposed via an insulating film; a light-shielding film disposed in a region corresponding to the light-shielding pixel region of the pixel array unit in the wiring layer; and shielding the light-shielding pixel region; the pixel array unit; An optical filter that is disposed on the film via an insulating film and limits the wavelength component of light incident on the plurality of pixels for each pixel, and the optical filter includes an effective portion corresponding to the effective pixel region; , The boundary region and And a disabling unit that corresponds to the light-shielded pixel area, was placed to suppress light entering suppression filter the passage of long wavelength light of at least the visible light to the optical filter disposed in the invalid portion.
The optical filter is a red, green, and blue three primary color filter, the light incident suppression filter is a filter in which the red filter and the blue filter of the three primary color filter are superimposed, and the blue filter is disposed on the upper layer of the red filter. The red filter and the blue filter of the light incident suppression filter are formed up to the middle position of the boundary region of the pixel array portion, and the blue filter is formed to a position closer to the effective portion side than the red filter.

In addition, an imaging apparatus according to the present invention includes an imaging unit that images a subject with a solid-state imaging device, an imaging optical system that causes a subject image to enter the imaging unit, a signal processing unit that performs signal processing on an image captured by the imaging unit, A display unit that displays image data processed by the signal processing unit; a recording unit that records image data processed by the signal processing unit; and an operation unit that performs operation input. A plurality of pixels that generate signal charges according to the amount of light incident on the surface are arranged in a two-dimensional direction, and an effective pixel area used for imaging a subject and a black reference signal arranged in the vicinity of the effective pixel area A pixel array unit having a light-shielded pixel region for obtaining, a boundary region disposed between the effective pixel region and the light-shielded pixel region, and an insulating film on the light-shielded pixel region of the pixel array unit A light-shielding film that shields the light-shielded pixel region, and an optical filter that is disposed on the pixel array portion and the light-shielding film via an insulating film and restricts wavelength components of light incident on the plurality of pixels for each pixel. The optical filter includes an effective portion corresponding to the effective pixel region and an invalid portion corresponding to the boundary region and the light-shielding pixel region, and is at least visible to the optical filter disposed in the invalid portion. An incident light suppression filter that suppresses the passage of long-wavelength light is disposed .
The optical filter is a red, green, and blue three primary color filter, the light incident suppression filter is a filter in which the red filter and the blue filter of the three primary color filter are superimposed, and the blue filter is disposed on the upper layer of the red filter. The red filter and the blue filter of the light incident suppression filter are formed up to the middle position of the boundary region of the pixel array portion, and the blue filter is formed to a position closer to the effective portion side than the red filter.

According to the solid-state imaging device and the imaging apparatus of the present invention, the optical filter disposed on the pixel array unit of the solid-state imaging device includes an effective unit corresponding to the effective pixel region of the pixel array unit, a boundary region of the pixel array unit, and Since it is divided into an ineffective part corresponding to the light-shielding pixel region and an incident light suppression filter that suppresses at least the passage of visible light long-wavelength light is arranged in the optical filter arranged in the ineffective part, it enters from the boundary region side. It is possible to effectively prevent long wavelength light reaching the light shielding pixel region side.
Therefore, there is an effect that an accurate black reference can be measured and a high-quality captured image can be output without restricting illegal incident light to the light-shielding pixel region (OPB) without taking a space of the boundary region.

FIG. 1 is a block diagram illustrating a configuration example of an imaging apparatus according to an embodiment of the present invention.
The imaging apparatus of this example is configured as a digital still camera or a digital video camera, and includes an imaging optical system 10, an imaging unit 20, a signal processing unit 30, a display unit 40, a recording unit 50, an operation unit 60, and the like. Yes.
The imaging optical system 10 includes various lenses, a diaphragm mechanism, and the like, and guides a subject image to the imaging unit 20. The imaging unit 20 captures a subject image using a solid-state imaging device such as a CCD image sensor or a CMOS image sensor.
The signal processing unit 30 performs processing such as format conversion on the image signal acquired by the imaging unit 20 and converts the image signal into data for display or recording. The display unit 40 is a liquid crystal display or the like that displays the image data processed by the signal processing unit 30, and the recording unit 50 records the image data processed by the signal processing unit 30 on a recording medium. The operation unit 60 includes a shutter button, various function keys, a cursor key, and the like, and is used by the user to perform various inputs for operating the imaging apparatus.

FIG. 2 is a plan view showing an example (CMOS image sensor) of a solid-state imaging device used in the imaging unit of this example, and FIG. 3 is a cross-sectional view showing the internal structure of the solid-state imaging device shown in FIG.
As shown in FIG. 2, the CMOS image sensor of this example is provided with a pixel array section 110, a peripheral circuit section 120, an input / output terminal section 130, and the like on a semiconductor chip 100.
The pixel array unit 110 is a two-dimensional array in which a large number of pixels each composed of a photodiode and a pixel transistor are arranged. Most of the pixel array unit 110 is an effective pixel region 111, which captures an image of a subject and outputs an image signal thereof. Further, a light-shielding pixel region (OPB) 113 for obtaining a black reference signal of the effective pixel region 111 is formed around the pixel array unit 110. In addition, a boundary region 112 is provided between the effective pixel region 111 and the light-shielding pixel region 113 to prevent unauthorized incident light on the OPB. In this example, two pixel columns are allocated as the boundary region 112.
The pixels of the effective pixel region 111, the boundary region 112, and the light-shielding pixel region 113 are basically formed simultaneously by the same process and have the same structure. Although not shown in FIG. 2, a metal light shielding film made of aluminum or the like is formed in the upper region of the light shielding pixel region 113.

In the peripheral circuit unit 120, a drive circuit for driving the pixel array unit, various signal processing circuits, and the like are formed by a CMOS process common to the pixel array unit 110. The input / output terminal unit 130 includes an input terminal and an output terminal that exchange various signals with an external device (in this example, the imaging apparatus main body).
A color filter and an on-chip lens (not shown in FIG. 2) are further attached to the upper surface of the semiconductor chip 100 formed in this way, and the sensor chip is incorporated into the imaging device.
In the example shown in FIG. 2, the light-shielded pixel region (OPB) is arranged along the four sides of the effective pixel region. However, as a method for arranging the light-shielded pixel region (OPB), the black reference can be measured with a good balance. For example, it can be arranged along two sides on both sides of the effective pixel region, or can be arranged in blocks in a part of each side or in each corner. In particular, it is not limited.

Next, FIG. 3 shows a cross section of a region from the above-described effective pixel region to the light-shielding pixel region. In this figure, a photodiode 210 as a photoelectric conversion element is formed on a silicon substrate 200, photoelectrically converts light incident from a light receiving surface on the upper surface of the substrate, and accumulates signal charges. In addition to the photodiode 210, the silicon substrate 200 is formed with various MOS transistors (pixel transistors) such as amplification, transfer, reset, and selection that constitute a pixel circuit. Here, the features of the present invention are directly described here. Omitted because it is not related.
An interlayer insulating film 220 is disposed on the silicon substrate 200 via a gate oxide film (not shown), and various wiring patterns 231 and 241 are formed in the insulating film 220 by a plurality of wiring films 230 and 240. Has been. In the illustrated example, an example of two-layer wiring is shown.
Here, a transparent silicon oxide film or the like is used as a material for the interlayer insulating film. As a material of the wiring film, for example, a polysilicon film is used for the lower wiring film 230 close to the silicon substrate, and a metal film such as aluminum is used for the upper wiring film 240.
In this example, the light shielding film 242 is formed using the upper aluminum wiring film 240.
The light shielding film 242 is disposed in a region corresponding to the light shielding pixel region 113 of the pixel array unit 110 described above, and blocks light incident from above and prevents light from entering the light shielding pixel region 113. . Thereby, the light-shielding pixel region 113 is basically shielded from light and functions as an OPB. On the other hand, in the effective pixel region 111 and the boundary region 112, incident light from above passes between the wiring patterns 231 and 241 and enters the photodiode 210 of each pixel.

An insulating film 220 is further laminated on the wiring layer 240 (light shielding film 242), and functions as a planarizing film or a protective film. A color filter is formed on the upper surface of the uppermost insulating film 220. 250 is formed, and an on-chip microlens 260 is formed on the upper surface thereof.
The color filter 250 and the microlens 260 are formed over the entire area of the pixel array unit 110. However, the color filter 250 has an effective part 250A corresponding to the effective pixel area 111, a boundary area 112, and a light-shielded pixel area 113. The effective portion 250A and the invalid portion 250B have different filter characteristics.
That is, the filter of the effective portion 250A functions as a normal color filter. In this example, three primary color filters of red, green, and blue (RGB) are used, and each pixel assigned to RGB in a predetermined pattern is used. RGB component light is incident on the photodiode.

In contrast, the invalid portion 250B has a pattern different from that of the effective portion 250A, and has a structure that attenuates the light component on the long wavelength side of visible light in particular.
As the filter of the ineffective portion 250B, various filter structures are possible. First, as a first example, when a three primary color filter is used, a red filter having the highest transmittance of the long wavelength light is the longest wavelength. It is conceivable to replace with a blue filter having a low light transmittance.
FIG. 3 shows this example, and the red filter 251 is included in the effective portion side filter, but only the blue filter 252 and the green filter 253 are disposed on the invalid portion side.
FIG. 4 shows such a filter configuration in comparison with the prior art. In the conventional filter structure shown in FIG. 4A, the primary color filter array of the effective portion is provided as it is extended to the invalid portion. However, the filter structure of this example shown in FIG. 4B has a filter structure in which the red filter is replaced with the blue filter on the invalid portion side. In addition, two columns of the invalid portion correspond to the boundary region of the pixel array portion, and the inside thereof is used as an effective portion (effective pixel region) for imaging a subject.
With such a filter structure, it is possible to effectively suppress the incoming of long wavelength light from the boundary region of the pixel array portion and obtain a structure that does not allow the long wavelength light to reach the light-shielding pixel side. As a result, it is possible to appropriately prevent illegal incident on the light-shielding pixel side while minimizing the space in the boundary region, and to accurately measure the black reference.
In particular, this method has an advantage that it can be realized only by changing the filter pattern and can be realized at low cost without significantly changing the conventional manufacturing process.

Further, as a second example, a method of unifying the ineffective portion side filter only by the blue filter 252 is possible. As described above, the blue filter can attenuate the longest wavelength light among the three primary colors. Therefore, in addition to the red filter, the green filter is replaced with the blue filter, and the ineffective portion is unified with the blue filter, thereby blocking the long wavelength light. A structure that does not reach the pixel side is obtained.
FIG. 5 shows such a filter configuration in comparison with the prior art. In the conventional filter structure shown in FIG. 5A, only the upper part of the light-shielding pixel region is a blue filter, but in this case, there is a possibility that long wavelength light may circulate from the boundary region of the pixel array portion to the light-shielding pixel region side. is there. However, in the filter structure of this example shown in FIG. 5B, the blue filter is disposed in the entire ineffective portion from the light-shielding pixel region to the boundary region, and the long wavelength light can be effectively prevented from entering the light-shielding pixel region.
Therefore, in this example, it is possible to appropriately prevent black light from being illegally incident on the light-shielding pixel side while minimizing the space in the boundary region and to accurately measure the black reference. Also in this example, it can be realized only by changing the filter pattern, and can be realized at low cost without significantly changing the conventional manufacturing process.

As a third example, a method in which the ineffective portion side filter has a two-layer structure of a blue filter and a red filter is possible. That is, in the three primary color filters, a strong light shielding effect can be obtained by overlapping the red filter and the blue filter. Therefore, by adopting this structure on the invalid portion side, illegal incidence to the light shielding pixel region is prevented. Further, it can be effectively prevented.
FIG. 6 is a sectional view showing the filter structure in this case. As shown in the figure, the ineffective portion filter has a double structure of a lower red filter 251 and an upper blue filter 252. However, in this case, since the base on which the microlens 260 is mounted becomes a step due to the double structure filter, as shown in the figure, the red filter 251 is partway along the boundary region, and the blue filter is on the effective pixel region side. With the structure extended to the base, the angle of the step is relaxed, and the base shape has no hindrance to the formation of the microlens.
FIG. 7 shows such a filter configuration in comparison with the prior art. In the conventional filter structure shown in FIG. 7A, only the upper part of the light-shielding pixel region has a double structure of a red filter and a blue filter, but in this case, the boundary region of the pixel array portion extends to the light-shielding pixel region side. There is a risk that long-wavelength light will circulate. However, in the filter structure of this example shown in FIG. 7B, a double filter of a red filter and a blue filter is arranged over the entire ineffective portion from the light-shielded pixel region to the boundary region, so that light enters the light-shielded pixel region. It can be effectively prevented.
Therefore, in this example, it is possible to appropriately prevent black light from being illegally incident on the light-shielding pixel side while minimizing the space in the boundary region and to accurately measure the black reference. Also in this example, it can be realized only by changing the filter pattern, and can be realized at low cost without significantly changing the conventional manufacturing process.

As a fourth example, a method using a black filter for the invalid portion is possible. If the black filter is used, all visible light can be prevented from entering, and the light in the wiring layer can be absorbed, so that a high light-shielding effect in the light-shielding pixel region can be obtained.
FIG. 8 shows such a filter configuration in comparison with the prior art. In the conventional filter structure shown in FIG. 8A, the black filter 254 is provided only above the light-shielding pixel region. In this case, long-wavelength light is emitted from the boundary region of the pixel array portion to the light-shielding pixel region side. There is a risk of getting around. However, in the filter structure of this example shown in FIG. 8B, the black filter 254 is disposed over the entire invalid portion from the light-shielding pixel region to the boundary region, and light can be effectively prevented from entering the light-shielding pixel region.
Therefore, in this example, it is possible to appropriately prevent black light from being illegally incident on the light-shielding pixel side while minimizing the space in the boundary region and to accurately measure the black reference. However, since a black filter that is not normally used is provided, it is necessary to provide a new process correspondingly, which increases costs. However, this method is effective when a sufficient light-shielding effect is desired. Although a black filter is used here, it is also possible to use a filter of another color having a light shielding effect.
In the above example, it is assumed that the three primary color filters are used. However, the configuration using the complementary color filters of cyan, magenta, and yellow can also be devised in the same manner. Of course, a black filter may be used.

As described above, in this example, a boundary region is provided between the effective pixel region and the light-shielded pixel region, and a filter having a low light transmittance is provided using the region extending from the light-shielded pixel region to the boundary region as an invalid portion of the color filter. Therefore, for example, it is possible to effectively prevent long-wavelength incident light such as red light and prevent illegally incident light on the OPB, to realize accurate black reference detection, and to provide a solid-state imaging device with stable image quality. it can. In addition, such a filter structure can effectively prevent unauthorized incident light on the OPB without taking a large space in the boundary region, can contribute to space saving of the pixel array section, and can reduce the size of the solid-state imaging device. Can contribute.
Note that, as a method of preventing illegally incident light on the OPB, when the light shielding film is simply extended to the boundary region, the illegally incident light due to reflection or diffraction in the wiring layer is conversely below the light shielding film. In addition, the light once entering under the light-shielding film is blocked by the light-shielding film and is not emitted to the outside, so that it remains in the OPB as reflected light, and remains as a false signal for a long time. In return, the accuracy of the black reference is lowered.
In contrast, in this example, by arranging a low-transmittance filter in the boundary region, in particular, incident light reaching the OPB is prevented by preventing illegal incidence of a long wavelength, and light in the wiring layer is bounded by the boundary. It can be emitted to the outside through a filter in the region, and it can effectively prevent illegal incident light reaching the OPB, thereby enabling accurate black reference measurement.

In the above description, the solid-state imaging device of the present invention has been described on the premise of a CMOS image sensor. However, the solid-state imaging device of the present invention is similar to a CCD image sensor that does not have a wiring layer on the light receiving surface of the photoelectric conversion device. Can be applied to.
Further, the present invention is not limited to the solid-state imaging device that captures a color image as described above, but can be similarly applied to an element used for a special purpose such as infrared rays.
The imaging apparatus to which the present invention can be applied is not limited to a digital still camera and a digital video camera, but can be widely applied to various monitoring cameras, medical endoscopes, and the like.

It is a block diagram which shows the structural example of the imaging device by the Example of this invention. It is a top view which shows an example of the solid-state image sensor used for the imaging device shown in FIG. It is sectional drawing which shows the element structure of the solid-state image sensor shown in FIG. FIG. 3 is a plan view showing a first example of a filter structure used in the solid-state imaging device shown in FIG. 2 in comparison with a conventional example. It is a top view which shows the 2nd example of the filter structure used with the solid-state image sensor shown in FIG. 2 in contrast with a prior art example. It is sectional drawing which shows the 3rd example of the filter structure used with the solid-state image sensor shown in FIG. It is a top view which shows the 3rd example of the filter structure shown in FIG. 6 in contrast with a prior art example. It is a top view which shows the 4th example of the filter structure used with the solid-state image sensor shown in FIG. 2 in contrast with a prior art example.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... Imaging optical system, 20 ... Imaging part, 30 ... Signal processing part, 40 ... Display part, 50 ... Recording part, 60 ... Operation part, 110 ... Pixel array part, 111 ... Effective pixel Region 112, boundary region 113, light-shielding pixel region (OPB), 120 peripheral circuit portion, 130 input / output terminal portion, 200 silicon substrate, 210 photodiode, 220 insulating film , 230, 240... Wiring film, 231, 241... Wiring pattern, 242 .. light shielding film, 250... Color filter, 250 A... Effective part, 250 B. Blue filter, 253... Green filter, 254... Black filter, 260.

Claims (6)

A plurality of pixels that generate signal charges according to the amount of light incident on the light receiving surface are arranged in a two-dimensional direction, and an effective pixel area used for imaging a subject, and a black reference signal that is arranged in the vicinity of the effective pixel area A pixel array unit having a light-shielded pixel region for obtaining a boundary region disposed between the effective pixel region and the light-shielded pixel region;
A light-shielding film disposed on the light-shielding pixel region of the pixel array portion via an insulating film and shielding the light-shielding pixel region;
An optical filter that is disposed on the pixel array portion and the light shielding film via an insulating film and limits a wavelength component of light incident on the plurality of pixels for each pixel;
The optical filter includes an effective portion corresponding to the effective pixel region, and an invalid portion corresponding to the boundary region and the light-shielding pixel region,
The place to suppress light entering suppression filter the passage of long wavelength light of at least the visible light to the optical filter disposed disabled section,
The optical filter is a red, green, and blue primary color filter, and the incident light suppression filter is a filter in which a red filter and a blue filter of the three primary color filters are superimposed.
In the three primary color filters, a blue filter is disposed on an upper layer of the red filter, and the red filter and the blue filter of the light incident suppression filter are formed up to a middle position of the boundary region of the pixel array unit, and the blue filter is a red filter. A solid-state imaging device formed up to a position closer to the effective portion side than the filter . A plurality of pixels that generate signal charges according to the amount of light incident on the light receiving surface are arranged in a two-dimensional direction, and an effective pixel area used for imaging a subject, and a black reference signal that is arranged in the vicinity of the effective pixel area A pixel array unit having a light-shielded pixel region for obtaining a boundary region disposed between the effective pixel region and the light-shielded pixel region;
A wiring layer disposed on the pixel array portion via an insulating film;
A light-shielding film disposed in a region corresponding to the light-shielded pixel region of the pixel array portion in the wiring layer and shielding the light-shielded pixel region;
An optical filter that is disposed on the pixel array portion and the light shielding film via an insulating film and limits a wavelength component of light incident on the plurality of pixels for each pixel;
The optical filter includes an effective portion corresponding to the effective pixel region, and an invalid portion corresponding to the boundary region and the light-shielding pixel region,
The place to suppress light entering suppression filter the passage of long wavelength light of at least the visible light to the optical filter disposed disabled section,
The optical filter is a red, green, and blue primary color filter, and the incident light suppression filter is a filter in which a red filter and a blue filter of the three primary color filters are superimposed.
In the three primary color filters, a blue filter is disposed on an upper layer of the red filter, and the red filter and the blue filter of the light incident suppression filter are formed up to a middle position of the boundary region of the pixel array unit, and the blue filter is a red filter. A solid-state imaging device formed up to a position closer to the effective portion side than the filter . The solid-state imaging device according to claim 2 , wherein the wiring layer has a plurality of wiring films stacked via an insulating film, and the light shielding film and the uppermost wiring film are shared. An imaging unit that images a subject with a solid-state imaging device, an imaging optical system that causes a subject image to enter the imaging unit, a signal processing unit that performs signal processing on an image captured by the imaging unit, and image data that is processed by the signal processing unit A display unit for displaying the image data, a recording unit for recording the image data processed by the signal processing unit, and an operation unit for performing an operation input,
The solid-state imaging device is
A plurality of pixels that generate signal charges according to the amount of light incident on the light receiving surface are arranged in a two-dimensional direction, and an effective pixel area used for imaging a subject, and a black reference signal that is arranged in the vicinity of the effective pixel area A pixel array unit having a light-shielded pixel region for obtaining a boundary region disposed between the effective pixel region and the light-shielded pixel region;
A light-shielding film disposed on the light-shielding pixel region of the pixel array portion via an insulating film and shielding the light-shielding pixel region;
An optical filter that is disposed on the pixel array portion and the light shielding film via an insulating film and limits a wavelength component of light incident on the plurality of pixels for each pixel;
The optical filter includes an effective portion corresponding to the effective pixel region, and an invalid portion corresponding to the boundary region and the light-shielding pixel region,
The place to suppress light entering suppression filter the passage of long wavelength light of at least the visible light to the optical filter disposed disabled section,
The optical filter is a red, green, and blue primary color filter, and the incident light suppression filter is a filter in which a red filter and a blue filter of the three primary color filters are superimposed.
In the three primary color filters, a blue filter is disposed on an upper layer of the red filter, and the red filter and the blue filter of the light incident suppression filter are formed up to a middle position of the boundary region of the pixel array unit, and the blue filter is a red filter. An imaging device formed up to a position closer to the effective portion side than the filter . Has a wiring layer disposed through an insulating film on the pixel array portion, the shielding film according to claim 4, wherein that are located in a region corresponding to the light-shielded pixel area of the pixel array portion of the wiring layer Imaging device. The imaging device according to claim 4 , wherein the wiring layer has a plurality of wiring films laminated via an insulating film, and the light shielding film and the uppermost wiring film are shared.

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