JP4871150B2 - Method for manufacturing vertical resonant tunneling device having annular structure, vertical resonant tunneling device, and magnetic detection device - Google Patents

Description

  The present invention relates to a resonant tunneling element that operates on the principle of an electron interference effect (Afranov-Bohm effect: AB effect), and more particularly to a method of manufacturing a vertical resonant tunneling element capable of highly sensitive magnetic field detection even under a strong magnetic field. And a vertical resonant tunneling element and a magnetic detection device.

  For example, as described in Patent Document 1, a SQUID (superconducting magnetic flux quantum interferometer) using the Josephson effect is known as a magnetic sensor. SQUID is composed by providing a Josephson junction (part with weak superconductivity) in a part of a ring made of superconductor such as Nb (niobium), and the superconductor can maintain a superconducting state. Works under.

  However, SQUID can be used only in an environment where the superconducting state is maintained, and there is a problem that it cannot be used under a strong magnetic field where the superconducting state cannot be maintained. In addition, there is a problem that it is difficult to manufacture a microfabricated product without reducing the detection sensitivity.

  Therefore, for example, devices such as vertical resonant tunneling transistors and vertical resonant tunneling diodes made of semiconductor as described in Patent Document 2 have been noticed and developed. The vertical resonant transistor element described in Patent Document 2 is provided with source and drain electrodes on the top and bottom of a semiconductor having a double barrier structure, etched from the source electrode side to the bottom of the double barrier structure, and exposed to the outside. A gate electrode is provided around the double barrier structure.

  According to this configuration, the space sandwiched between the double barriers becomes a disk shape, and electrons are confined in this disk space. However, since the space in which electrons are confined is disk-shaped, it is impossible to observe energy oscillation due to the magnetic field due to the AB effect. Therefore, as shown in Non-Patent Document 1, a structure in which a hole penetrating the double barrier portion is provided and the electron confinement space is formed in a ring shape has been proposed. A schematic diagram of this structure is shown in FIG.

  The resonant tunneling device 1 of FIG. 9 is provided with a semiconductor 3 provided with a hole 2 penetrating in the center, a source electrode 4 provided at the upper end of the semiconductor 3, and a lower end of the cylindrical semiconductor 3. And a drain electrode 5. In the cylindrical semiconductor 3, two ring-shaped barriers 6 and 7 (double barriers) that are perpendicular to the axis of the cylinder are provided close to each other, and a quantum well 8 is provided between the barriers 6 and 7. It is formed. A gate electrode 9 is provided so as to surround the double barriers 6 and 7.

  FIG. 10A is a graph showing the magnetic field dependence of electron energy when the electron confinement space is “disk-shaped”, and FIG. 10B is the magnetic field dependence of electron energy when the electron confinement space is ring-shaped. It is a graph which shows sex. These graphs are also introduced in Non-Patent Document 2.

When comparing FIGS. 10A and 10B, the lines indicated by the black triangles in FIG. 10B indicate energy oscillation due to the AB effect, and the hole 2 is provided in the resonant tunneling element 1 so as to confine electrons. It is shown that if the space is ring-shaped, magnetic detection can be performed with high accuracy by energy vibration.

JP 2006-284518 A JP-A-8-264807 Physics Society of Japan Autumn 1999 Subcommittee Proceedings 26pD-1 “Tunnel Characteristics of Small Semiconductor Ring Structure” Document “C. W. J. et al. Beneakker, H.M. van Houten, and A.A. A. M.M. Staring, Inflation of Coulomb replication on the Aharanov-Bohm effect in a quantum dot, Physical Review B44 (1991) 1657 ”.

When a vertical resonant tunneling element is used for magnetic measurement, it is desired to miniaturize the element. However, even if the resonant tunneling element is manufactured in a small size and the hole 2 in FIG. 9 is to be etched in the vertical direction, the etching gas can enter only about the mean free path. It becomes impossible to make a hole that penetrates.

  An object of the present invention is to provide a method for manufacturing a vertical resonant tunneling element that can be miniaturized and that can be used as a magnetic sensor capable of confining electrons in a ring-shaped space and performing magnetic detection with high sensitivity even in a strong magnetic field, and a vertical resonant tunneling An object is to provide an element and a magnetic detection device.

The method for manufacturing a vertical resonant tunneling element of the present invention includes a columnar semiconductor having a modulation doping structure between a metal film serving as a source electrode and a drain electrode composed of a conductive layer, and the source electrode of the columnar semiconductor and the source electrode A vertical resonance in which a multi-barrier layer formed of the modulation doping structure substantially parallel to the metal film is provided between the drain electrode and a bottomed hole is formed from the source electrode side in the central axis portion of the columnar semiconductor In the method of manufacturing a tunnel element, when the bottomed hole is formed, an electron confinement region between the multiple barrier layers is effectively formed by a depletion layer formed by making a bottom of the bottomed hole not to penetrate the multiple barrier layer. It is characterized by having a ring-like depth.

  The vertical resonant tunnel device manufacturing method of the present invention is characterized in that the bottom of the bottomed hole is formed in the middle of the multi-barrier layer or near the source electrode side of the multi-barrier layer.

The vertical resonant tunneling element of the present invention includes a columnar semiconductor having a modulation doping structure between a metal film serving as a source electrode and a drain electrode composed of a conductive layer, and the source electrode and the drain electrode of the columnar semiconductor A vertical resonant tunneling element comprising a multi-barrier layer formed with the modulation doping structure substantially parallel to the metal film, and having a bottomed hole formed in the central axis portion of the columnar semiconductor from the source electrode film side In this case, when the bottomed hole is formed, an electron confinement region between the multiple barrier layers is effectively ring-shaped by a depletion layer generated by setting the bottom of the bottomed hole to a depth that does not penetrate the multiple barrier layer. It is formed to a depth.

  The vertical resonant tunneling element of the present invention is characterized by comprising a gate electrode that covers the portion of the multiple barrier layer exposed at the outer peripheral portion of the columnar semiconductor.

  The vertical resonant tunnel device of the present invention is characterized in that the multiple barrier layer is a double barrier layer or a triple barrier layer.

  In the vertical resonant tunneling device of the present invention, the thickness from the bottomed hole of the columnar semiconductor to the outer peripheral surface of the constricted portion is reduced so that the ring-shaped electron confinement region has a plurality of constricted portions. It is characterized in that the thickness of the part other than is formed thick.

  In the vertical resonant tunnel element of the present invention, when the plurality of constricted portions are three, the shape of the bottomed hole is made triangular, and the constricted portions are provided at positions corresponding to the apexes of the triangular shape. It is characterized by.

  In the vertical resonant tunneling device of the present invention, when the plurality of constricted portions are four, the shape of the bottomed hole is made into a quadrangular shape, and the constricted portions are provided at positions corresponding to the apexes of the quadrangular shape. It is characterized by.

  The vertical resonant tunneling device of the present invention is configured such that a gate electrode covering the multiple barrier layer exposed on the outer peripheral surface of the thick part is provided separately for each thick part and a gate control voltage is applied separately. It is characterized by that.

  The magnetic detection device of the present invention includes a magnetic sensor using the vertical resonant tunneling element according to any one of the above, and a source-drain connection that applies a voltage between the source electrode and the drain electrode of the magnetic sensor. It is characterized by comprising voltage applying means and magnetic measuring means for monitoring a tunnel current that flows between the source electrode and the drain electrode and responds to fluctuations in electron energy in the ring-shaped electron confinement region.

  The magnetic detection device of the present invention includes a magnetic sensor using the above-described vertical resonant tunneling element including a gate electrode, and a source-drain connection that applies a voltage between the source electrode and the drain electrode of the magnetic sensor. Voltage application means; magnetic measurement means for monitoring a tunnel current that flows between the source electrode and the drain electrode and responds to fluctuations in electron energy in the ring-shaped electron confinement region; and applied voltage to the gate electrode And a gate voltage applying means for adjusting the detected magnetic sensitivity.

  According to the present invention, even if the hole does not penetrate the multiple barrier portion, the depletion layer formed at the tip or the peripheral portion of the hole penetrates the multiple barrier portion and forms the electron confinement space in a ring shape. This energy state has a magnetic field dependency, and magnetic detection can be performed with high accuracy. Further, by providing the gate electrode, the size of the electron confinement region can be variably controlled, and the sensitivity of the detected magnetism can be adjusted.

  The vertical resonant tunneling element of the present invention has a structure in which a current flows from the source electrode to the drain electrode in parallel with the magnetic field to be measured. Can do.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

(First embodiment)
FIG. 1 is a configuration diagram of a vertical resonant tunneling diode according to a first embodiment of the present invention. The vertical resonant tunneling diode 10 according to this embodiment includes a columnar semiconductor 11, a source electrode 12 provided at the upper end of the columnar semiconductor 11, and a drain electrode 13 provided at the lower end of the semiconductor 11. Prepare. In addition, although the semiconductor 11 in the illustrated example is a straight cylindrical shape, it may be a mesa shape.

  Inside the semiconductor 11, two modulation doped barrier layers 14 and 15 (double barriers) that are perpendicular to the axis of the cylinder are provided close to each other, and a quantum well (electron confinement space) is provided between the barriers 14 and 15. ) 16 is formed. A hole 17 is formed in the columnar semiconductor 11 from the source electrode 12 side to the drain electrode 13 side. In the illustrated example, the hole 17 is an upper barrier layer (source electrode side) barrier layer. 14 penetrates but does not reach the lower barrier layer 15.

  Such a vertical resonant tunneling diode 10 has a ring shape having a ring-shaped source electrode 12 or a sufficiently thin line so that electrons do not accumulate on the upper end surface of the plate-shaped semiconductor on which the modulation doped barrier layers 14 and 15 are formed. It can be manufactured by laminating metal wires by vapor deposition or the like and using this as a mask to etch the semiconductor from the source electrode 12 side.

  At the time of this etching, the outside of the cylindrical semiconductor 11 is etched to the lower side of the double barriers 14 and 15, but the inside of the cylindrical semiconductor 11 is because the diameter of the hole 17 is as fine as about 0.086 μm, for example. It is etched only to a shallow position. That is, the bottom of the hole 17 does not physically reach the lower barrier layer 15.

  However, when the conductive layer serving as the source electrode is etched, the potential is effectively increased and it becomes difficult to supply electrons, and when the bottomed hole 17 is formed, the hole 17 is formed around and at the tip. The formed depletion layer penetrates the lower barrier layer 15 or extends to the vicinity thereof, and the electron confinement space is effectively ring-shaped in terms of physical phenomenon. By utilizing this phenomenon, it becomes easy to manufacture a minute vertical resonant tunneling element.

  That is, by designing the element in consideration of the spread of the depletion layer due to the hole 17, the double barriers 14 and 15 are formed deeper than the shallow position where the hole 17 physically penetrates. Is possible.

  In the above-described embodiment, the hole 17 is formed at a depth such that the tip of the hole 17 penetrates the barrier layer 14 and does not reach the barrier layer 15. However, even when the hole 17 is formed so as not to penetrate the barrier layer 14. There is no problem as long as the layer extends through the barrier layers 14 and 15 in the penetrating direction and the electron confinement space is effectively ring-shaped.

  In the vertical resonant tunneling diode 10 having such a configuration, the quantum well 16 formed between the double barriers 14 and 15 has a ring shape, and the energy of the electrons confined in the ring space is measured to thereby obtain the SQUID. It is possible to perform magnetic detection with the same degree of sensitivity.

  Comparing the above-described FIGS. 10A and 10B, in FIG. 10B, the lines indicated by the black triangles indicate the energy vibration due to the AB effect. This energy oscillation can be understood from the relationship between the source-drain voltage and the source-drain current of the vertical resonant tunneling diode 10 shown in FIG.

  According to FIG. 2, when the source-drain voltage is increased, the source-drain current (tunnel current) has a peak position corresponding to the magnetic field, that is, a peak position of the electron energy state. For this reason, high-speed sweep control is performed on the source-drain voltage of the resonant tunneling diode 1 in a magnetic field measurement environment, so that high-speed magnetic measurement is possible.

  Therefore, in the case of configuring a magnetic detection device using the vertical resonant tunneling diode 10 as a magnetic sensor, voltage applying means for sweep-controlling the source-drain voltage of the vertical resonant tunneling diode 10 and between the source and drain at the time of this voltage control Magnetic measuring means for monitoring the tunneling current flowing through the substrate may be provided.

  Since a semiconductor tunnel diode allows a current to flow even under a strong magnetic field, magnetic detection under a strong magnetic field is possible, and further, miniaturization technology of a semiconductor device can be applied, so that the diode 10 can be easily miniaturized.

(Second Embodiment)
FIG. 3 is a configuration diagram of a vertical resonant tunneling transistor according to the second embodiment of the present invention. Since the basic structure of the vertical resonant tunneling transistor 20 of this embodiment is the same as that of the vertical resonant tunneling diode 10 of the first embodiment, the same members are denoted by the same reference numerals and description thereof is omitted.

  The vertical resonant tunneling transistor 20 of the present embodiment is different from the vertical resonant tunneling diode 10 of FIG. 1 in that a gate electrode 18 is provided. The gate electrode 18 in the illustrated example is provided on the drain electrode 13 so as to be electrically separated, and the center of the gate electrode 18 is surrounded by the outer periphery of the semiconductor 11 and the modulation-doped double barriers 14 and 15 are provided. It is raised in a cylindrical shape up to the covering position.

  In the vertical resonant tunneling transistor 20 of this embodiment, a required voltage is applied to the gate electrode 18 in the electron existence region of the quantum well 16 that is effectively formed in a ring shape by the depletion layer between the barriers 14 and 15. The magnetic detection sensitivity can be adjusted.

  When the gate voltage is changed when this gate voltage is applied, a phenomenon called “Coulomb oscillation” occurs in which current flows only when the energy required to add one electron is compensated, as in the case of changing the source-drain voltage. Since the vibration interval reflects the electron energy in addition to the classic Coulomb repulsive force, accurate magnetic field measurement is possible.

  Therefore, when the magnetic detection device is configured using the vertical resonant tunneling transistor 20 as a magnetic sensor, detection sensitivity adjustment means for controlling the voltage applied to the gate electrode 18 is provided in addition to the configuration of the magnetic detection device of the first embodiment. Alternatively, a voltage applying unit that swings the gate voltage applied to the gate electrode 18 is provided.

(Third embodiment)
FIG. 4 is a configuration diagram of a vertical resonant tunneling diode according to the third embodiment of the present invention. The basic structure of the vertical resonant tunneling diode 30 according to this embodiment is the same as that of the vertical resonant tunneling diode 10 of the first embodiment shown in FIG. Omitted.

  The vertical resonant tunneling diode 10 of the first embodiment includes the modulation-doped double barriers 14 and 15, whereas the vertical resonant tunneling diode 30 of the present embodiment includes the modulation-doped triple barriers 14, 15, and 19. Is different. By forming a triple barrier, a double quantum well structure of a quantum well 16 formed between the barriers 14 and 15 and a quantum well 21 formed between the barriers 16 and 19 is obtained.

  Of course, the barrier layer 19 provided under the barrier layer 15 is provided at a position where a depletion layer formed at the tip of the hole 17 extends, and is provided at a position where the quantum well 21 is effectively ring-shaped.

  FIG. 5 is a graph showing the relationship between the source-drain voltage and the source-drain current (tunnel current) in the vertical resonant tunneling diode 30 having a triple barrier structure. In this embodiment, compared with FIG. 2, the current increase characteristic expected according to the electron energy state is larger, and the current increase that occurs when the quantum levels of the two quantum wells are measured is measured. By doing so, the magnetic field can be accurately detected.

  In this embodiment, by using a double quantum well structure, fluctuations in electrons due to temperature, noise, etc. can be eliminated, and it is not necessary to consider the Coulomb energy between electrons, so the magnetic field can be detected with higher accuracy. It becomes possible to do.

(Fourth embodiment)
FIG. 6 is a configuration diagram of a vertical resonant tunneling transistor according to the fourth embodiment of the present invention. The vertical resonant tunneling transistor 40 according to this embodiment is configured by adding the gate electrode 18 described in FIG. 3 to the vertical resonant tunneling diode 30 of the third embodiment shown in FIG. The same components as those in FIG. 4 are denoted by the same reference numerals, and the description thereof is omitted.

  In the present embodiment, since the gate electrode 18 is disposed on the outer peripheral portion of the triple barriers 14, 15, and 19, the size of the ring-shaped electron confinement region can be changed by this gate electrode 18, and the magnetic detection sensitivity is adjusted. It becomes possible to do. At the same time, a single electronic state can be realized, and a state that does not require consideration of Coulomb energy between electrons can be easily realized.

(Fifth embodiment)
FIG. 7 is a configuration diagram of a vertical triple quantum dot resonant tunneling device according to the fifth embodiment of the present invention. In the vertical triple quantum dot resonant tunneling device 50 of this embodiment, a plate-like semiconductor 54 in which a conductive layer (drain electrode layer) 51 is formed at the bottom and modulation doped double barrier layers 52 and 53 are formed at the middle is etched. Is formed.

  The body portion 55 formed in a columnar shape at the center has a hole 56 formed by etching at the center. In this case as well, as in the above-described embodiment, the hole 56 does not need to be provided through both the double barrier layers 52 and 53, and the tip of the hole 56 is close to the double barrier layers 52 and 53. It is sufficient if the quantum well between the double barrier layers 52 and 53 is effectively ring-shaped by the depletion layer. Of course, if the hole 56 can be formed so as to penetrate the double barrier layers 52 and 53, it is needless to say that the hole 56 may be provided.

  A source electrode film 57 that also serves as a mask for etching is provided on the main body 55. The source electrode film 57 is provided with a regular triangular hole 57 a for forming the hole 56. Then, the thickness of the main body portion 55 at the location facing each side of the hole 57a of the equilateral triangle is formed to be thick and the thickness of the main body portion 55 at the location facing each vertex of the equilateral triangle is increased. The shape of the mask 57 is designed so as to be thinned.

  Further, linear portions 57b, 57c, 57d extend radially from the respective vertex positions of the equilateral triangle, whereby semiconductor wall portions 58a, 58b, 58c are formed by etching under the respective linear portions 57b, 57c, 57d. The outer peripheral surface of the main body 55 is divided into three by walls 58a, 58b, and 58c. Gate electrode films 59a (G1), 59b (G2), and 59c (G3: FIG. 3) are separated from each other on the outer peripheral surface of the three-divided main body 55 so as to cover the double barrier layers 52 and 53, respectively. Not shown).

  Even with the element having such a configuration, the measurement of the magnetic field entering parallel to the hole 56 can be performed in the same manner as the elements of the first to fourth embodiments. In addition, in the case of the present embodiment, the quantum well (electron confinement region) formed between the double barrier layers 52 and 53 has a ring shape as in the above embodiment, and this ring shape is the regular triangle. The constricted electrons are divided into three ring-shaped bulges, and each behaves as a quantum dot. .

  At this time, by independently controlling the voltages applied to the three gates G1, G2, and G3, the energy of each of the three electron quantum dots can be modulated, and high-precision magnetic field measurement is possible.

  As a conventional document related to the double quantum dot, T.W. Hatano et al., “Single-Electron Delocalization In Hybrid Vertical Double Quantum Dots”, 8 July 2005 VOL. 309 SCIENCE www. sciencemag. However, this prior art element does not have anything similar to the “hole” in the above-described embodiment.

(Sixth embodiment)
FIG. 8 is a configuration diagram of a vertical quadrupole dot resonant tunneling element 60 according to the sixth embodiment of the present invention. This embodiment is different in that the idea of the vertical triple quantum dot resonant tunneling element shown in FIG. 7 is a quadruple configuration, and the other points are the same. That is, in the present embodiment, the ring-shaped electron confinement region is constricted at the four constricted portions, and the electrons are confined at the four bulged portions.

  For this reason, a square hole 61a is provided at the center of the mask electrode (source electrode film) 61 for forming the hole 62, and each of the squares is formed so that the thickness of the main body 65 at each side of the square is increased. The thickness of the main body portion 65 at the vertex facing position is reduced.

  Even with this configuration, magnetic field measurement with high accuracy is possible as in the above-described embodiments. In addition, although only the example which provided the double barrier layer was demonstrated in 5th, 6th embodiment, it cannot be overemphasized that a triple barrier layer can be provided.

  The method for manufacturing a vertical resonant tunneling device according to the present invention is based on a depletion layer formed by forming a bottomed hole, rather than actually forming a hole in the electron confinement region by penetrating the multiple barrier layer. Since the electron confinement region is effectively ring-shaped, the device design is facilitated and the device can be miniaturized. For this reason, the vertical resonant tunneling element according to the present invention can be manufactured by using a semiconductor microfabrication technique and can be mass-produced, so that it can be manufactured at a low cost. Further, since it has a high spatial resolution, it is useful as a magnetic sensor.

1 is a configuration diagram of a vertical resonant tunneling diode according to a first embodiment of the present invention. It is a current increase characteristic view of the vertical resonant tunnel diode of the first embodiment. It is a block diagram of the vertical resonance tunnel transistor which concerns on 2nd Embodiment of this invention. It is a block diagram of the vertical resonance tunnel diode which concerns on 3rd Embodiment of this invention. It is a current increase characteristic view of the vertical resonant tunneling diode of the third embodiment. It is a block diagram of the vertical resonance tunnel transistor which concerns on 4th Embodiment of this invention. It is a block diagram of the vertical triple quantum dot resonant tunnel element which concerns on 5th Embodiment of this invention. It is a block diagram of the vertical quadrupole dot resonance tunnel element which concerns on 6th Embodiment of this invention. It is a block diagram of the conventional vertical resonance tunnel transistor. It is a graph which shows the magnetic field dependence of the electron energy when the electron confinement area | region is disk shape (a) and it is a ring shape (b).

Explanation of symbols

10, 30 Vertical resonant tunneling diode 12, 57, 61 Source electrode 13 Drain electrode 14, 15, 19, 52, 53 Modulation doped barrier layer 16, 21 Quantum well (electron confinement layer)
17, 56, 62 Hole 18 Gate electrode 20, 40 Vertical resonant tunneling transistor 50, 60 Vertical multiple quantum dot resonant tunneling device

Claims (12)

A columnar semiconductor having a modulation-doped structure is provided between a metal film serving as a source electrode and a drain electrode composed of a conductive layer, and is substantially parallel to the metal film between the source electrode and the drain electrode of the columnar semiconductor. The bottomed hole is formed in a method of manufacturing a vertical resonant tunneling device comprising a multi-barrier layer formed with the modulation-doped structure, wherein a bottomed hole is formed from the source electrode side in a central axis portion of the columnar semiconductor The bottom of the bottomed hole has a depth that does not penetrate the multi-barrier layer, so that the electron confinement region between the multi-barrier layers is effectively ring-shaped by a depletion layer. A method for manufacturing a vertical resonant tunneling device.   2. The method of manufacturing a vertical resonant tunneling device according to claim 1, wherein the bottom portion of the bottomed hole is formed in the middle of the multiple barrier layer or near the source electrode side of the multiple barrier layer. A columnar semiconductor having a modulation-doped structure is provided between a metal film serving as a source electrode and a drain electrode composed of a conductive layer, and is substantially parallel to the metal film between the source electrode and the drain electrode of the columnar semiconductor. When forming the bottomed hole in a vertical resonant tunneling device comprising a multi-barrier layer formed with the modulation-doped structure and having a bottomed hole formed in the central axis portion of the columnar semiconductor from the source electrode film side The electron confinement region between the multiple barrier layers is effectively formed in a ring-like depth by a depletion layer formed by making the bottom of the bottomed hole not penetrate the multiple barrier layer. Vertical resonant tunneling device.   The vertical resonant tunneling device according to claim 3, further comprising a gate electrode that covers a portion of the multiple barrier layer exposed at an outer peripheral portion of the columnar semiconductor.   5. The vertical resonant tunneling device according to claim 3, wherein the multiple barrier layer is a double barrier layer or a triple barrier layer.   The ring-shaped electron confinement region has a plurality of constricted portions, and the thickness of the constricted portion from the bottomed hole of the columnar semiconductor to the outer peripheral surface is reduced and the thickness of the other portions is increased. The vertical resonant tunneling device according to claim 3, wherein the vertical resonant tunneling device is provided.   The vertical resonant tunneling device according to claim 6, wherein the bottomed hole has a polygonal shape.   The shape of the bottomed hole is triangular when the plurality of constricted portions are three, and the constricted portions are provided at positions corresponding to the vertices of the triangle. Vertical resonant tunneling device.   8. The neck according to claim 7, wherein when the plurality of constricted portions are four, the bottomed hole has a quadrangular shape and the constricted portions are provided at positions corresponding to the apexes of the quadrangular shape. Vertical resonant tunneling device.   The gate control voltage is separately applied to each of the thickly formed portions, and a gate control voltage is applied separately. The gate electrode covering the multiple barrier layer exposed on the outer peripheral surface of the thickly formed portion is provided. The vertical resonant tunneling device according to claim 9.   A magnetic sensor using the vertical resonant tunnel element according to any one of claims 3 to 10, and a source-drain voltage application for applying a voltage between the source electrode and the drain electrode of the magnetic sensor. And a magnetic measuring means for monitoring a tunnel current that flows between the source electrode and the drain electrode and responds to fluctuations in electron energy in the ring-shaped electron confinement region. .   A magnetic sensor using the vertical resonant tunneling element according to claim 4 or 10, and source-drain voltage applying means for applying a voltage between the source electrode and the drain electrode of the magnetic sensor, Magnetic measurement means for monitoring a tunnel current that flows between the source electrode and the drain electrode and responds to fluctuations in electron energy in the ring-shaped electron confinement region, and detects by adjusting a voltage applied to the gate electrode A magnetic detection device comprising: a gate voltage application unit that adjusts magnetic sensitivity.

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