JP4829649B2 - Method for producing silicon quantum dot activated layer of silicon quantum dot activated solar cell - Google Patents
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Description
本発明は、シリコン量子点活性化太陽電池のシリコン量子点活性化層の製造方法に関し、特に、形成されたシリコン量子点構造により、電子の運動や方向を制限することにより、光電変換効率が向上されるものに関する。 The present invention relates to a method for producing a silicon quantum dot activation layer of a silicon quantum dot activated solar cell, and in particular, the photoelectric conversion efficiency is improved by limiting the movement and direction of electrons by the formed silicon quantum dot structure. About what will be done.
従来の半導体太陽電池は、ＩＩＩ−Ｖ族やシリコンのバルク或いはシリコン薄膜等を、光電材料とするのが一般的であり、それは、光電性が実現されるが、工程が複雑で、コストが高いため、実用的ではない。 Conventional semiconductor solar cells generally use a group III-V, silicon bulk or silicon thin film as a photoelectric material, which realizes photoelectricity, but has a complicated process and high cost. Therefore, it is not practical.
故に、関係業者が有機染料（dye）を光電材料とする半導体太陽電池を提案し、例えば、中華民国特許公報第093114773号「太陽電池ユニットとそのモジュール」は、上表面と下表面とがある光電変換層と、当該光電変換層の上表面に形成され、当該光電変換層の縁から伸ばす陽極導通部が含有される陽極層と、当該光電変換層の下表面に形成され、当該光電変換層の縁から伸ばす陰極導通部が含有される陰極層と、当該光電変換層を封止し、当該陽極導通部と当該陰極導通部が、それぞれ、外部へ露出するように、当該光電変換層の縁に設置される一つ以上のスペーサと、が含有され、当該光電変換層は、染料光電層と電解質とを含有し、当該染料光電層が、当該陽極層の上に設置され、当該電解質が、当該染料光電層と当該陰極層との間に充填される。 Therefore, a related contractor has proposed a semiconductor solar cell using an organic dye (dye) as a photoelectric material. For example, the Chinese Patent Publication No. 093114773 “Solar cell unit and its module” has an upper surface and a lower surface. A conversion layer, an anode layer formed on the upper surface of the photoelectric conversion layer and containing an anode conducting portion extending from an edge of the photoelectric conversion layer; and formed on the lower surface of the photoelectric conversion layer, The cathode layer containing the cathode conduction part extending from the edge and the photoelectric conversion layer are sealed, and the anode conduction part and the cathode conduction part are respectively exposed on the edge of the photoelectric conversion layer so as to be exposed to the outside. and one or more spacers to be installed, is contained, the photoelectric conversion layer contains a dye photoelectric layer and an electrolyte, the dye photoelectric layer is placed on top of the anode layer, the electrolyte, the filled between the dye photoelectric layer and the cathode layer It is.
当該「太陽電池ユニットとそのモジュール」によれば、従来の、工程が複雑であり、コストが高い欠点が改善されるが、当該有機染料が、高分子有機物からなるため、長期間に太陽光に照射されると、当該材料が、変質し、そして、光電作用の効果が失ってしまう。そのため、上記の従来の「太陽電池ユニットとそのモジュール」も、実用的ではない。
本発明の主な目的は、太陽光を吸収すると、厚さが100ナノメートル（nanometer）より小さいシリコン量子点分布層により、電子正孔対が生成され、形成されたシリコン量子点構造により、電子の運動や方向を制限し、光電変換効率が向上されるシリコン量子点活性化太陽電池のシリコン量子点活性化層の製造方法を提供する。 The main object of the present invention is to generate electron-hole pairs by a silicon quantum dot distribution layer having a thickness of less than 100 nanometers upon absorption of sunlight, and by the formed silicon quantum dot structure, electrons The manufacturing method of the silicon quantum point activation layer of the silicon quantum point activation solar cell which restrict | limits the motion and direction of this and can improve photoelectric conversion efficiency is provided.
本発明は、上記の目的を達成するため、酸化インジウムスズ（ITO）層と二酸化チタン（TiO2）層とが積層された基板を反応チャンバーの中へ入れ込み、当該反応チャンバーの中において、シラン（SiH4）を前駆物質体（precursor）として、アルゴン（Argon）を希釈あるいはキャリヤーガスとし、複数回のパルス蒸着法により、基板の二酸化チタン層の表面において、シリコン量子点核生成層（nucleation）とシリコン量子点成長生長層（growth）及びシリコン量子点不活性化層（passivation）の形成を行い、直接に複数のシリコン量子点が分布される構造が形成され、また、一回のパルス蒸着法により、直接に、シリコン量子点構造以外に、炭化ケイ素（SiCx）量子点薄膜を沈着し、これにより、当該基板の二酸化チタン層の表面に、厚さが100ナノメートルより小さいシリコン量子点分布層が形成されるシリコン量子点活性化太陽電池のシリコン量子点活性化層の製造方法である。 In order to achieve the above object, the present invention puts a substrate in which an indium tin oxide (ITO) layer and a titanium dioxide (TiO 2 ) layer are stacked into a reaction chamber, and in the reaction chamber , silane ( SiH 4 ) as a precursor, Argon as a dilution or carrier gas, and a plurality of pulsed deposition methods to form a silicon quantum dot nucleation layer on the surface of the titanium dioxide layer of the substrate. silicon quantum dot growth growth layer (growth) and silicon quantum dots passivation layer performs the formation of (passivation), the structure directly plurality of silicon quantum point is the distribution is formed, also, a single pulse deposition Directly deposits a silicon carbide (SiCx) quantum dot thin film in addition to the silicon quantum dot structure, so that the thickness of the substrate is 100 nanometers on the surface of the titanium dioxide layer. Is a manufacturing method of the silicon quantum dot active layer of the silicon quantum dots activated solar cells smaller silicon quantum point distribution layer is formed.
図１〜５は、それぞれ、本発明の基板の断面概念図と本発明の工程ｃのシリコン量子点核層概念図、本発明の工程ｃのシリコン量子点生長層概念図、本発明の工程ｃのシリコン量子点不活性化層概念図及び本発明の工程ｄのシリコン量子点分布層概念図である。本発明は、図のように、シリコン量子点活性化太陽電池のシリコン量子点活性化層の製造方法であって、
ａ、少なくとも酸化インジウムスズ（ITO）層１１と二酸化チタン（TiO2）層１２とが積層された基板であって、導電ガラス板やプラスチック板である基板１を用意し、
ｂ、当該基板１を反応チャンバーの中へ入れ込み、
ｃ、当該反応チャンバーの中において、シラン（SiH4）を前駆物質体（precursor）として、アルゴン（Argon）を希釈あるいはキャリヤーガス（carrier gas）とし、また、当該反応チャンバーの内部において、シランの濃度比または流量比が1%乃至20%の間にあり、処理ガス圧力が1ミリトール（mTorr）乃至2000ミリトールの間にあり、基板の処理温度が室温乃至350℃の間にあり、その後、プラズマCVD（Plasma-enhanced chemical vapor deposition、PECVD）での複数回のパルス（multi-pulses）蒸着により、当該基板１の二酸化チタン層１２の表面において、シリコン量子点核生成層２１１（nucleation）と成長生長層２１２（growth）及び不活性化層２１３（passivation）の形成を行い、直接に複数のシリコン量子点が分布される構造２１が形成され、
d、一回のパルス蒸着により、直接に、当該複数のシリコン量子点が分布される構造２１以外に、炭化ケイ素（SiCx）量子点薄膜２２を沈着し、これにより、当該基板の二酸化チタン層１２の表面に、厚さが100ナノメートル（nanometer）より小さいシリコン量子点分布層２が形成される。
1 to 5 are a cross-sectional conceptual diagram of the substrate of the present invention, a silicon quantum dot nucleus conceptual diagram of the step c of the present invention, a silicon quantum dot growth layer conceptual diagram of the step c of the present invention, and a process c of the present invention, respectively. FIG. 2 is a conceptual diagram of a silicon quantum point deactivation layer and a silicon quantum point distribution layer conceptual diagram of step d of the present invention. The present invention, as shown in the figure, is a method for producing a silicon quantum dot activated layer of a silicon quantum dot activated solar cell,
a, a substrate in which at least an indium tin oxide (ITO) layer 11 and a titanium dioxide (TiO 2 ) layer 12 are laminated, and a substrate 1 which is a conductive glass plate or a plastic plate is prepared,
b, putting the substrate 1 into the reaction chamber;
c, Silane (SiH 4 ) as a precursor, Argon as dilution or carrier gas in the reaction chamber, and the concentration of silane in the reaction chamber The ratio or flow ratio is between 1% and 20%, the process gas pressure is between 1 mTorr and 2000 mTorr, the substrate processing temperature is between room temperature and 350 ° C., and then plasma CVD A silicon quantum dot nucleation layer 211 (nucleation) and a growth growth layer are formed on the surface of the titanium dioxide layer 12 of the substrate 1 by multi-pulses deposition by plasma-enhanced chemical vapor deposition (PECVD). 212 perform formation of the (growth) and passivation layer 213 (passivation), the structure 21 directly plurality of silicon quantum point is the distribution is formed,
d. In addition to the structure 21 in which the plurality of silicon quantum dots are directly distributed, a silicon carbide (SiCx) quantum dot thin film 22 is deposited by one pulse deposition, whereby the titanium dioxide layer 12 of the substrate is deposited. A silicon quantum dot distribution layer 2 having a thickness of less than 100 nanometers is formed on the surface of the substrate.
上記のように、新規のシリコン量子点活性化太陽電池のシリコン量子点活性化層の製造方法が構成される。 As mentioned above, the manufacturing method of the silicon quantum point activation layer of a novel silicon quantum point activation solar cell is comprised.
また、当該工程ｃにおいて、シリコン量子点不活性化層工程は、シリコン原子表面のダングリングボンド（dangling bonds）にSi-HとSi-C連鎖が形成され、また、当該シリコン量子点不活性化層工程のガス材料は、水素ガス（H2）やメタン（CH4）或いは他の水素原子や炭素原子を生成できるガスであり、目的として、シリコン量子点の酸化や化学反応或いは機械摩擦等の問題を解消することでありながら、光電流と光電圧とが向上される。 Further, in the step c, the silicon quantum point deactivation layer step includes the formation of Si-H and Si-C linkages in the dangling bonds on the silicon atom surface, and the silicon quantum point deactivation. The gas material of the layer process is hydrogen gas (H 2 ), methane (CH 4 ), or other gas that can generate hydrogen atoms or carbon atoms. For the purpose, oxidation of silicon quantum dots, chemical reaction, mechanical friction, etc. While eliminating the problem, the photocurrent and photovoltage are improved.
上記のように、本発明に係わるシリコン量子点活性化太陽電池のシリコン量子点活性化層の製造方法によれば、有効に、従来の様々の欠点を改善でき、厚さが100ナノメートルより小さいシリコン量子点分布層が、太陽光を吸収すると、電子正孔対が生成され、また、形成されたシリコン量子点構造により、電子の運動や方向を制限することにより、光電変換効率が向上され、そのため、本発明は、より進歩的且つ実用的なものであるため、法に従って特許請求を出願する。 As described above, according to the method for producing a silicon quantum dot activated layer of a silicon quantum dot activated solar cell according to the present invention, various conventional defects can be effectively improved, and the thickness is less than 100 nanometers. When the silicon quantum dot distribution layer absorbs sunlight, electron-hole pairs are generated, and by the formed silicon quantum dot structure, the movement and direction of electrons are restricted, thereby improving the photoelectric conversion efficiency, Therefore, since the present invention is more advanced and practical, a patent claim is filed according to the law.
以上は、ただ、本発明のより良い実施例であり、本発明に係わる特許請求の範囲は、それによって制限されず、また、本発明に係わる特許請求の範囲や明細書内容に従う、等価の変更や修正は、全てが本発明の特許請求の範囲に含まれる。 The above is merely a better embodiment of the present invention, and the scope of the claims related to the present invention is not limited thereby, and equivalent modifications according to the scope of the claims and the description of the present invention are not limited thereto. All modifications and variations are within the scope of the claims.
１ 基板
１１ 酸化インジウムスズ層
１２ 二酸化チタン層
２ シリコン量子点分布層
２１ シリコン量子点構造
２１１ シリコン量子点核生成層
２１２ シリコン量子点成長生長層
２１３ シリコン量子点不活性化層
２２ 炭化ケイ素量子点薄膜
DESCRIPTION OF SYMBOLS 1 Substrate 11 Indium tin oxide layer 12 Titanium dioxide layer 2 Silicon quantum dot distribution layer 21 Silicon quantum dot structure 211 Silicon quantum dot nucleation layer 212 Silicon quantum dot growth growth layer 213 Silicon quantum dot inactivation layer 22 Silicon carbide quantum dot thin film
Claims (7)
ｂ、当該基板を反応チャンバーの中へ入れ込み、
ｃ、当該反応チャンバーの中において、シラン（SiH4）を前駆物質体（precursor）として、アルゴン（Argon）を希釈あるいはキャリヤーガス（carrier gas）とし、また、複数回のパルス（multi-pulses）蒸着法により、基板の二酸化チタン層の表面において、シリコン量子点核生成層（nucleation）と成長生長層（growth）及び不活性化層（passivation）の形成を行い、直接に、複数のシリコン量子点が分布される構造が形成され、
d、一回のパルス蒸着法により、直接に、当該複数のシリコン量子点が分布される構造以外に、炭化ケイ素（SiCx）量子点薄膜を沈着して、当該基板の二酸化チタン層の表面に、シリコン量子点分布層が形成される、
ことを特徴とするシリコン量子点活性化太陽電池のシリコン量子点活性化層の製造方法。 a. Preparing a substrate on which at least an indium tin oxide (ITO) layer and a titanium dioxide (TiO 2 ) layer are laminated,
b, putting the substrate into the reaction chamber,
c. In the reaction chamber, silane (SiH 4 ) is used as a precursor, argon (Argon) is used as a dilution or carrier gas, and multi-pulses deposition is performed. by law, the surface of the titanium dioxide layer of a substrate, subjected to formation of a silicon quantum dot nucleation layer (nucleation) and growth growth layer (growth) and passivation layer (passivation), directly, a plurality of silicon quantum dots structures the distribution is formed,
d, by depositing a silicon carbide (SiCx) quantum dot thin film directly on the surface of the titanium dioxide layer of the substrate, in addition to the structure in which the plurality of silicon quantum dots are distributed directly by a single pulse deposition method, A silicon quantum dot distribution layer is formed,
A method for producing a silicon quantum dot activated layer of a silicon quantum dot activated solar cell.
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