JP4793579B2 - Piezoelectric ceramic composition and multilayer piezoelectric element - Google Patents

Description

  The present invention relates to a piezoelectric ceramic composition suitable for a piezoelectric layer of various piezoelectric elements such as an actuator, a piezoelectric buzzer, a sounding body, and a sensor, and a laminated piezoelectric element using the composition, and particularly, a temperature of 950 ° C. or lower and a low The present invention relates to a piezoelectric ceramic composition that can be fired in an oxygen reducing atmosphere.

A piezoelectric ceramic composition used for a piezoelectric element is required to have a large piezoelectric characteristic, particularly a piezoelectric strain constant. Conventionally, piezoelectric ceramics capable of obtaining a large piezoelectric strain constant include, for example, lead titanate (PbTiO ₃ ; PT), lead zirconate (PbZrO ₃ ; PZ), and lead zinc niobate (Pb (Zn _1/3 Nb _{2). / 3} ) A ternary system (PZT) with O ₃ ) or a part of its lead (Pb) is replaced with strontium (Sr), barium (Ba), calcium (Ca) or the like. .

However, since these conventional piezoelectric ceramics have a firing temperature as high as about 1200 ° C., an expensive noble metal such as platinum (Pt) or palladium (Pd) is used as an internal electrode when a laminated piezoelectric element is manufactured. There is a problem that the manufacturing cost is high. Therefore, in order to use a cheaper silver-palladium (Ag—Pd) alloy for the internal electrode, it has been desired to lower the firing temperature.
In such a situation, the applicant of the present invention includes a first subcomponent including at least one selected from Fe, Co, Ni, and Cu, and Sb, Nb, and Ta in the ternary piezoelectric ceramic composition. Patent Document 1 proposes that low temperature firing at 1050 ° C. or lower is possible by adding a second subcomponent containing at least one selected from the above, and that an inexpensive material such as an Ag—Pd alloy can be used for the internal electrode. did.

  More recently, the use of copper (Cu), which is less expensive than an Ag—Pd alloy, for the internal electrode has also been studied. However, since the melting point of Cu is 1085 ° C., the firing temperature must be 1050 ° C. or lower in order to use Cu. However, since Cu begins to be sintered at a lower temperature, the firing temperature should be as low as possible, for example, 950 ° C. or lower. In addition, since Cu is a base metal, it oxidizes when fired in the atmosphere and cannot be used as an electrode. Therefore, when a multilayer piezoelectric element using Cu as an internal electrode is manufactured, firing in a low oxygen reducing atmosphere is required.

In response to this request, the present applicant has (Pb _ab Me _b ) [(Zn _1/3 Nb _2/3 ) _x Ti _y Zr _z ] O ₃ (where a, b, x, y, z are 0.96 ≦ a ≦ 1.03, 0 ≦ b ≦ 0.1, x + y + z = 1, 0.05 ≦ x ≦ 0.40, 0.1 ≦ y ≦ 0.5, 0.2 ≦ z ≦ 0 For each calcined powder having a composition of strontium (Sr), calcium (Ca) and barium (Ba). Of a piezoelectric ceramic that is fired by adding 0.01 to 1.5% by mass in terms of Pb converted to oxide (PbO) and 1% by mass or less in terms of Cu converted to oxide (CuO) A manufacturing method was proposed in Patent Document 2.

JP 2004-137106 A JP 2006-193414 A

In Patent Document 2, it has been confirmed that high piezoelectric characteristics can be obtained even when firing in a low oxygen reducing atmosphere at a low firing temperature.
However, according to subsequent studies by the present inventors, the piezoelectric ceramic composition of Patent Document 2 shows excellent piezoelectric characteristics under a low applied voltage of, for example, 1 V / mm or less, but can be driven under a high voltage. Sufficient displacement could not be obtained in the required products such as actuators. Since these products are driven under a high voltage of 1 to 3 kV / mm, it is necessary for a piezoelectric ceramic to exhibit good piezoelectric characteristics under this high voltage. There are a plurality of physical property values for evaluating the piezoelectric characteristics. However, when used as a multilayer piezoelectric element, the electromechanical coupling coefficient kr (%) and the displacement amount are important. However, since it is cumbersome to evaluate a material under a high voltage of 1 kV / mm or more, the actual situation is that simple impedance measurement or measurement using a d33 meter is performed under a low voltage of 1 V / mm or less. The piezoelectric ceramic composition has been evaluated so far, assuming that the piezoelectric characteristics under a low voltage and the piezoelectric characteristics under a high voltage are linked. However, in the piezoelectric ceramic composition disclosed in Patent Document 2, the piezoelectric characteristics under a low voltage and the piezoelectric characteristics under a high voltage are not linked.

  Accordingly, the present invention provides a piezoelectric ceramic composition and a multilayer piezoelectric element that can be fired in a low-temperature, low-oxygen reducing atmosphere and that can be sufficiently displaced even under a high voltage of 1 kV / mm or more. Objective.

When the present inventors examined the composition of PZT, in the composition shown by (Pb _a-b Me _b ) [(Zn _1/3 Nb _2/3 ) _x Ti _y Zr _z ] O ₃ , It has been found that the piezoelectric characteristics vary depending on the value of x indicating the amount of substitution of (Zn _1/3 Nb _2/3 ), which is called a relaxer. That is, it has been found that the piezoelectric characteristics are improved under a high voltage of 1 kV / mm or more as x decreases. However, when the value of x decreases, that is, the relaxor component decreases, the firing temperature at which a sufficient density can be obtained increases to 1100 ° C. or higher, making it impossible to obtain a multilayer piezoelectric element at a lower firing temperature.
Regarding the problem of the firing temperature, it was confirmed that a dense porcelain was obtained at a low firing temperature by adding Cu. However, it has also become clear that the addition of Cu causes a decrease in piezoelectric characteristics under high voltage. According to further studies by the present inventors, at least one selected from Co, Ni, Mg and Ga in order to obtain high piezoelectric characteristics under high voltage while enjoying the effect of reducing the firing temperature by adding Cu. Furthermore, it has been found that it is effective to add at least one selected from Tb, Nb, W and Sb.

The piezoelectric ceramic composition of the present invention based on the above knowledge is
The main component is a complex oxide represented by the following composition formula (1) or (2),
For the main component,
As a first subcomponent, Cu is 0 <α ≦ 0.5 mass% in terms of Cu ₂ O conversion amount α,
As the second subcomponent, at least one selected from Co, Ni, Ga and Mg, Co, Ni and Ga are oxide equivalent amounts β, and Mg is carbonate equivalent amount β 0 <β ≦ 0.2 mass% ,
As the third subcomponent, at least one selected from Ta, Nb, W, and Sb is contained in an oxide equivalent amount γ that includes 0 <γ ≦ 0.6 mass%.
Composition formula (1): Pb _a [(Zn _1/3 Nb _2/3 ) _x Ti _y Zr _z ] O ₃
A, x, y and z in the composition formula (1) are
0.96 ≦ a ≦ 1.03,
0.005 ≦ x ≦ 0.047,
0.42 ≦ y ≦ 0.53,
0.45 ≦ z ≦ 0.56,
While satisfying x + y + z = 1,
Me in the formula represents at least one selected from Sr, Ca and Ba.
Composition formula (2): (Pb _ab Me _b ) [(Zn _1/3 Nb _2/3 ) _x Ti _y Zr _z ] O ₃
A, b, x, y and z in the composition formula (2) are
0.96 ≦ a ≦ 1.03,
0 <b ≦ 0.1,
0.005 ≦ x ≦ 0.047,
0.42 ≦ y ≦ 0.53,
0.45 ≦ z ≦ 0.56,
While satisfying x + y + z = 1,
Me in the formula represents at least one selected from Sr, Ca and Ba.

  In the piezoelectric ceramic composition of the present invention described above, the amount of the relaxor component of the piezoelectric ceramic composition disclosed in Patent Document 1 and Patent Document 2 is 0.05 or more as x in the above composition formula, The difference is that it is 0.047 or less. This is because, as described above, when the amount of the relaxor component is reduced to 0.047 or less, high piezoelectric characteristics can be obtained under a high voltage.

  Here, since Cu and Pb, which is the main constituent element of the piezoelectric ceramic composition, form a eutectic near 963 ° C., when a multilayer piezoelectric element using Cu as an internal electrode material is produced, the piezoelectric ceramic composition is 950 It must be a material that can be sintered below ℃. Moreover, since Cu oxidizes when fired in the air, it must be fired in a low oxygen reducing atmosphere. However, the piezoelectric ceramic composition according to the present invention can obtain a dense sintered body even by firing in a low oxygen reducing atmosphere.

  The present invention can be applied to multilayer piezoelectric elements. That is, the present invention provides a multilayer piezoelectric element comprising a plurality of piezoelectric layers and a plurality of internal electrodes inserted between the piezoelectric layers, wherein the piezoelectric layer is composed of the piezoelectric ceramic composition. To do. In this multilayer piezoelectric element, the internal electrode can be made of Cu. This is because the piezoelectric ceramic composition of the present invention can be fired in a low temperature and low oxygen reducing atmosphere. However, the multilayer piezoelectric element of the present invention is not limited to the internal electrode made of Cu, and conventional Pt, Pd, and Ag—Pd alloys can be used for the internal electrode. (Ni) and other metals (including alloys) may be used as the internal electrode.

  As described above, according to the present invention, firing is possible in a low-temperature and low-oxygen reducing atmosphere of 950 ° C. or lower, and sufficient displacement can be obtained even under a high voltage of 1 kV / mm or higher.

The piezoelectric ceramic composition according to the present invention is mainly composed of a composite oxide represented by the following composition formula (1) or (2).
Composition formula (1): Pb _a [(Zn _1/3 Nb _2/3 ) _x Ti _y Zr _z ] O ₃
A, x, y and z in the composition formula (1) are
0.96 ≦ a ≦ 1.03,
0.005 ≦ x ≦ 0.047,
0.42 ≦ y ≦ 0.53,
0.45 ≦ z ≦ 0.56,
While satisfying x + y + z = 1,
Me in the formula represents at least one selected from Sr, Ca and Ba.
Composition formula (2): (Pb _ab Me _b ) [(Zn _1/3 Nb _2/3 ) _x Ti _y Zr _z ] O ₃
A, b, x, y and z in the composition formula (2) are
0.96 ≦ a ≦ 1.03,
0 <b ≦ 0.1,
0.005 ≦ x ≦ 0.047,
0.42 ≦ y ≦ 0.53,
0.45 ≦ z ≦ 0.56,
While satisfying x + y + z = 1,
Me in the formula represents at least one selected from Sr, Ca and Ba.

The composite oxide has a so-called perovskite structure, and the substitution element Me of Pb and Pb is located at a so-called A site of the perovskite structure. Zn, Nb, Ti, and Zr are located at the so-called B site of the perovskite structure.
In the composition formula, Pb which is an A-site element, or the total ratio a of Pb and Me is 0.96 ≦ a ≦ 1.03. When the ratio a of the A site element is less than 0.96, firing at a low temperature becomes difficult. On the other hand, when the ratio “a” of the A-site element exceeds 1.03, the piezoelectric characteristics under high voltage are deteriorated. A more preferable A-site element ratio a is 0.97 ≦ a ≦ 1.02, and a more preferable A-site element ratio a is 0.98 ≦ a ≦ 1.01.

  In the above composition formula, it is allowed to replace a part of Pb with the element Me (Sr, Ca, Ba), but this can increase the piezoelectric strain constant. However, if the substitution amount b of the substitution element Me is too large, the piezoelectric characteristics under high voltage are deteriorated. Also, the Curie temperature tends to decrease as the substitution amount b increases. Therefore, the substitution amount b of the substitution element Me is preferably 0.1 or less. A more preferred substitution amount b of the substitution element Me is 0.005 ≦ b ≦ 0.08, and a more preferred substitution amount b of the substitution element Me is 0.007 ≦ b ≦ 0.05. Note that the ratio of Pb when a part of Pb is replaced by Me is ab.

On the other hand, the ratio x of the total amount of Zn and Nb, which are relaxor components, among the B site elements is 0.005 ≦ x ≦ 0.047. According to the study by the present inventors, the lower the value of x, the better the piezoelectric characteristics under high voltage. Therefore, in the present invention, x is set to 0.047 or less. However, when the amount of the relaxor component is less than 0.005, the deterioration of the piezoelectric characteristics due to high voltage becomes significant. A preferable ratio x of Zn and Nb is 0.01 ≦ x ≦ 0.04, and a more preferable ratio x of Zn and Nb is 0.015 ≦ x ≦ 0.025.
Note that neither Patent Document 1 nor Patent Document 2 has a description suggesting that the piezoelectric characteristics under high voltage are improved by reducing the amount of the relaxor component.

Of the B site elements, the Ti ratio y and the Zr ratio z are preferably set in terms of piezoelectric characteristics. Specifically, the Ti ratio y is 0.42 ≦ y ≦ 0.53, and the Zr ratio z is 0.45 ≦ z ≦ 0.56. By setting within this range, a large piezoelectric strain constant can be obtained in the vicinity of the morphotropic phase boundary (MPB).
A preferable Ti ratio y is 0.45 ≦ y ≦ 0.49, and a more preferable Ti ratio y is 0.45 ≦ y ≦ 0.48.
Moreover, the preferable zr ratio z is 0.46 ≦ z ≦ 0.55, and the more preferable Zr ratio z is 0.48 ≦ z ≦ 0.54.
In addition, the composition of each element in the above composition formula, for example, oxygen (O), is determined stoichiometrically, and in a porcelain obtained by actual firing, a deviation from the stoichiometric composition occurs. Such a thing is included in the present invention.

The piezoelectric ceramic composition of the present invention contains Cu as a first subcomponent in a Cu ₂ O equivalent amount α of 0 <α ≦ 0.5% by mass.
In the piezoelectric ceramic composition of the present invention, the ratio x of the relaxor components (Zn and Nb) at the B site is set low in order to ensure the piezoelectric characteristics under a high voltage. However, by doing so, the firing temperature for obtaining a sufficient sintered density becomes high, and low-temperature firing at 950 ° C. or lower cannot be realized. In the present invention, by containing Cu as described above, dense sintering is possible by firing at 950 ° C. or lower. However, if the amount of Cu exceeds 0.5% by mass in terms of Cu ₂ O, the piezoelectric characteristics are significantly lowered under high voltage, and the effect of the second subcomponent described later cannot be enjoyed. Therefore, the upper limit is 0.5% by mass. The preferable content of Cu is 0.01 ≦ α ≦ 0.2 mass%, and the more preferable content is 0.01 ≦ α ≦ 0.1 mass%.

The amount of Cu is specified in terms of Cu ₂ O as described above, but this is not intended to specify the presence form of Cu in the piezoelectric ceramic composition. For example, Cu may be contained in the piezoelectric ceramic composition as Cu oxide in any oxidation state, such as Cu ₂ O and CuO, or may exist as metal Cu.
Further, Cu contained in the piezoelectric ceramic composition may be based on, for example, Cu ₂ O added to the precursor, or the piezoelectric layer is formed during the firing of Cu contained in the internal electrode described later. It may have been included by diffusing into. Moreover, both may be combined. In the present invention, it is important that Cu is contained in the piezoelectric ceramic composition, and its addition method and existence form are basically not limited. However, the presence form in the piezoelectric layer is different between the added Cu and the Cu by diffusion as described below.

Using the raw material powder of the main component of Example 1 described later, a disk-shaped molded body was obtained in the same manner as Example 1. A Cu paste containing Cu powder having a particle size of 1.0 μm was printed on both the front and back surfaces of this molded body. Thereafter, the molded body was heat-treated to volatilize the binder, and fired at 950 ° C. for 8 hours in a low oxygen reducing atmosphere (oxygen partial pressure 1 × 10 ⁻¹⁰ to 1 × 10 ⁻⁶ atm).
Further, 0.05% by mass of Cu ₂ O powder was added to the raw material powder of the main component of Example 1 described later, and a disk-shaped molded body was obtained in the same manner as in Example 1. Then, it baked similarly to the above.

About two types of sintered compacts obtained above, element (Cu) mapping by EPMA (Electron Probe Micro Analyzer) was performed. The results are shown in FIG. 1 (Cu paste printing) and FIG. 2 (Cu ₂ O powder addition). As shown in FIGS. 1 and 2, the segregation of Cu was significantly observed in the sintered body to which the Cu ₂ O powder was added, compared to the sintered body obtained by printing the Cu paste. In FIGS. 1 and 2, the light-colored portion indicates that the Cu concentration is high. In order to confirm the identity of the segregation of Cu, TEM (Transmission Electron Microscope) observation was performed on the sintered body to which the Cu ₂ O powder was added. Specifically, composition analysis was performed at the positions of points A to F shown in FIG. As a result, it was confirmed that the amount of Cu ₂ O at the position of the point F was 93.6% by mass. Therefore, it is understood that the particles present at the position including the point F are based on the added Cu ₂ O powder. On the other hand, when the sintered body obtained by printing the Cu paste was also observed by TEM, particles containing a large amount of Cu ₂ O could not be found, and the grain boundaries of the sintered body crystal grains were not found. It was confirmed that Cu was present. In this way, Cu does not exist as particles but exists exclusively in the grain boundary phase, so that durability of piezoelectric characteristics is improved as shown in Example 8 described later.

The piezoelectric ceramic composition of the present invention contains at least one selected from Co, Ni, Ga and Mg as the second subcomponent. The second subcomponent exhibits the effect of improving the piezoelectric characteristics under a high voltage. However, the content of these second subcomponents is such that Co, Ni, and Ga are oxide equivalents β, and Mg is carbonate equivalent β and 0 <β ≦ 0.2 mass% with respect to the main component. To do. This is because when the content of the second subcomponent exceeds 0.2% by mass in terms of oxide, the piezoelectric characteristics under high voltage are deteriorated. The oxide conversion is CoO conversion in the case of Co, NiO conversion in the case of Ni, and Ga ₂ O ₃ conversion in the case of Ga. Further, Mg carbonate conversion is MgCO ₃ conversion.
A preferable content of the second subcomponent is 0.01 ≦ β ≦ 0.15 mass%, and a more preferable content is 0.02 ≦ β ≦ 0.1 mass%.

The piezoelectric ceramic composition of the present invention contains at least one selected from Ta, Nb, W and Sb as the third subcomponent. By adding this subcomponent, the piezoelectric characteristics can be improved. However, the content of these third subcomponents is 0 <γ ≦ 0.6 mass% in terms of oxide equivalent γ with respect to the main component. This is because if the content of the third subcomponent exceeds 0.6% by mass in terms of oxide, the sinterability may decrease and the piezoelectric characteristics may decrease. The terms of oxide, in the case of Ta is set to _Ta 2 _{O 5} in terms, in the case of Nb is set to calculated as _Nb 2 _{O 5,} in the case of W is the terms _of WO _3, in the case of Sb is a _Sb 2 _{O 3} in terms of To do.
The preferred content of the third subcomponent is 0.05 ≦ γ ≦ 0.4 mass%, and the more preferred content is 0.1 ≦ γ ≦ 0.35 mass%.

Here, both the second subcomponent and the third subcomponent enter the B site.
As shown in the composition formulas (1) and (2), the B site is occupied by Ti and Zr, both of which are tetravalent elements. On the other hand, the second subcomponent, for example Co, is an element generally called an acceptor that is divalent and has a small valence with respect to a tetravalent site.
It is understood that an element having a small valence such as Co has a small restraint force received from other elements, and therefore, the movement (diffusion) at the time of firing is fast and acts as a sintering aid. Thus, Co improves the piezoelectric characteristics of the piezoelectric ceramic composition of the present invention by improving the sinterability. The other second subcomponents are also bivalent and thus have the same effect. However, such an element having a small binding force from other elements is understood to harden the piezoelectric effect, and there is a possibility that the original characteristics of the piezoelectric ceramic composition may be deteriorated.

On the other hand, the third subcomponent, for example, W is an element generally called a donor, which is hexavalent and has a large valence with respect to a tetravalent site.
An element having a large valence such as W has a large restraining force from other elements, so that the movement (diffusion) during firing is slow, and the sinterability may be reduced. However, it is understood that an element having a large restraining force from such other elements softens the piezoelectric effect and improves the original characteristics of the piezoelectric element. Other third subcomponents also have the same effect because they are pentavalent or hexavalent.

  The present invention basically aims to improve piezoelectric characteristics by adding a third subcomponent which is a softening agent, while adding a second subcomponent to improve the sinterability. It can be said that it has. In addition, when the third subcomponent is added, the average valence of the B site deviates from the tetravalent value that is the stoichiometric value, but when the second subcomponent is added at the same time, the deviation is corrected and more stable. In terms of forming a compound, it is meaningful to add the second subcomponent and the third subcomponent simultaneously.

The piezoelectric ceramic composition of the present invention can further contain other subcomponents in addition to the first to third subcomponents described above. For example, Ag, rare earth metal element, and Li. When Ag is contained, the content is 1% by mass or less in terms of oxide (Ag ₂ O). When the rare earth metal element is contained, specifically, at least one selected from Dy, Nd, Eu, Gd, Tb, Ho and Er is made 0.3 mass% or less in terms of oxide. When Li is contained, the content is 0.1% by mass or less in terms of carbonate. These subcomponents also exhibit the effect of improving the piezoelectric characteristics under high voltage.

The piezoelectric ceramic composition according to the present invention has been described above. Next, a multilayer piezoelectric element to which the piezoelectric ceramic composition of the present invention is applied will be described.
FIG. 4 is a cross-sectional view showing a configuration example of the multilayer piezoelectric element 1 obtained by the present invention. Note that FIG. 4 is merely an example, and it is needless to say that the present invention is not limited to the multilayer piezoelectric element 1 of FIG. The multilayer piezoelectric element 1 includes a multilayer body 10 in which a plurality of piezoelectric layers 11 and a plurality of internal electrodes 12 are alternately stacked. The thickness per layer of the piezoelectric layer 11 is, for example, 1 to 200 μm, preferably 20 to 150 μm, and more preferably 50 to 100 μm. Note that the number of stacked piezoelectric layers 11 is determined according to the target displacement.

  As the piezoelectric ceramic composition constituting the piezoelectric layer 11, the above-described piezoelectric ceramic composition according to the present invention is used. The piezoelectric layer 11 has the composition formula (1) or the composition formula (2) described above as a main component and includes a first subcomponent to a third subcomponent, so that the low temperature and low oxygen reducing atmosphere at 950 ° C. or lower. High piezoelectric properties can be realized under high voltage even by firing at.

  The internal electrode 12 contains a conductive material. Since the piezoelectric ceramic composition according to the present invention can be fired at a low temperature of 1050 ° C. or lower, further 950 ° C. or lower, not only Ag—Pd alloy but also Cu and Ni can be used as the conductive material. As described above, when Cu is used as the conductive material of the internal electrode 12, it is necessary that the piezoelectric ceramic composition according to the present invention satisfies two conditions. Satisfied.

For example, the plurality of internal electrodes 12 are alternately extended in opposite directions, and a pair of terminal electrodes 21 and 22 electrically connected to the internal electrode 12 are provided in the extending direction. The terminal electrodes 21 and 22 are electrically connected to an external power source (not shown) via a lead wire (not shown), for example.
The terminal electrodes 21 and 22 may be formed by sputtering Cu, for example, or may be formed by baking terminal electrode paste. Although the thickness of the terminal electrodes 21 and 22 is suitably determined according to a use etc., it is 10-50 micrometers normally.

Next, a preferred method for manufacturing the multilayer piezoelectric element 1 will be described with reference to FIG. FIG. 5 is a flowchart showing the manufacturing process of the multilayer piezoelectric element 1.
First, as the main starting material for obtaining the piezoelectric layer 11, for example, PbO, TiO ₂ , ZrO ₂ , ZnO and Nb ₂ O ₅ or compounds that can be converted to these oxides by firing; from SrO, BaO and CaO A powder such as at least one selected oxide or a compound that can be converted into these oxides by firing is prepared and weighed (step S101). As a starting material, not an oxide but a material that becomes an oxide by firing, such as carbonate or oxalate, may be used. As these raw material powders, those having an average particle diameter of about 0.5 to 10 μm are usually used.

When subcomponents are included in the starting material of the piezoelectric layer 11, in addition to the above, raw materials for each subcomponent are prepared. As the first subcomponent, at least one of Cu powder, Cu ₂ O powder and CuO powder can be used. As the second subcomponent, at least one of CoO powder, NiO powder, MgO powder, and Ga ₂ O ₃ powder can be used. Further, as a third subcomponent, _Ta 2 _{O 5} powder, _Nb 2 _{O 5} powder, it is possible to use at least one of WO ₃ powder and _Sb 2 _{O 3} powder. As described above, instead of an oxide, a material that becomes an oxide by firing, such as carbonate or oxalate, may be used.

Subsequently, the starting materials of the main component and the subcomponent are wet pulverized and mixed using, for example, a ball mill to form a raw material mixture (step S102).
In addition, although the starting material of a subcomponent may be added before temporary baking (step S103) mentioned later, you may make it add after temporary baking. However, it is preferable to add it before calcination because a more uniform piezoelectric layer 11 can be produced. When added after calcination, it is preferable to use an oxide as a starting material for the auxiliary component.

Next, the raw material mixture is dried and, for example, pre-baked at a temperature of 750 to 950 ° C. for 1 to 6 hours (step S103). This pre-baking may be performed in the air, or may be performed in an atmosphere having a higher oxygen partial pressure or in a pure oxygen atmosphere than in the air.
After calcining, for example, the calcined product is wet pulverized and mixed in a ball mill to obtain a calcined powder containing a main component and optional subcomponents (step S104).
Next, a binder is added to the temporarily fired powder to produce a piezoelectric layer paste (step S105). Specifically, it is as follows. First, a slurry is obtained by wet pulverization using, for example, a ball mill. At this time, water or an alcohol such as ethanol, or a mixed solvent of water and ethanol can be used as a solvent for the slurry. The wet pulverization is preferably performed until the average particle size of the calcined powder becomes about 0.5 to 2.0 μm.

  The resulting slurry is then dispersed in an organic vehicle. The organic vehicle is obtained by dissolving a binder in an organic solvent, and the binder used in the organic vehicle is not particularly limited, and may be appropriately selected from usual various binders such as ethyl cellulose, polyvinyl butyral, and acrylic. Also, the organic solvent used at this time is not particularly limited, and may be appropriately selected from organic solvents such as terpineol, butyl carbitol, acetone, toluene, MEK (methyl ethyl ketone), terpineol, etc. Just choose.

  When the piezoelectric layer paste is used as a water-based paint, a water-based vehicle in which a water-soluble binder, a dispersant, or the like is dissolved in water and a pre-fired powder may be kneaded. The water-soluble binder used for the water-based vehicle is not particularly limited, and for example, polyvinyl alcohol, cellulose, water-soluble acrylic resin, or the like may be used.

Also, an internal electrode paste is prepared (step S106).
The internal electrode paste is prepared by kneading the various conductive materials described above or various oxides, organometallic compounds, resinates, and the like, which become the conductive materials described above after firing, and the above-described organic vehicle.
In the firing step described later, if the internal electrode paste contains Cu as a conductive material, Cu diffuses into the piezoelectric layer 11 formed by firing the piezoelectric layer paste.

The terminal electrode paste is prepared in the same manner as the internal electrode paste (step S107).
In the above, the piezoelectric layer paste, the internal electrode paste, and the terminal electrode paste are produced in order, but it goes without saying that they may be produced in parallel or in the reverse order.
The content of the organic vehicle in each paste is not particularly limited, and may be a normal content, for example, about 5 to 10% by mass for the binder and about 10 to 50% by mass for the solvent. Each paste may contain an additive selected from various dispersants, plasticizers, dielectrics, insulators and the like as necessary.

Next, a green chip (laminated body) to be fired is manufactured using the above paste (step S108).
When producing a green chip by using a printing method, a piezoelectric layer paste is printed a plurality of times on a substrate such as polyethylene terephthalate at a predetermined thickness, as shown in FIG. The body layer 11a is formed. Next, the internal electrode paste is printed in a predetermined pattern on the green outer piezoelectric layer 11a to form a green internal electrode (internal electrode precursor) 12a. Next, a piezoelectric layer paste is printed a plurality of times at a predetermined thickness on the internal electrode 12a in the green state to form a green state piezoelectric layer (piezoelectric layer precursor) 11b. . Next, an internal electrode paste is printed in a predetermined pattern on the green piezoelectric layer 11b to form a green internal electrode 12b. The green internal electrodes 12a, 12b,... Are formed so as to be exposed to different end surfaces. The above operation is repeated a predetermined number of times, and finally, a piezoelectric layer paste is printed a predetermined number of times with a predetermined thickness on the internal electrode 12 in the green state to form the outer piezoelectric layer 11c in the green state. To do. Then, it pressurizes and pressure-bonds, heating, cut | disconnects to a predetermined shape, and is set as a green chip (laminated body).
In the above, an example in which a green chip is manufactured by a printing method has been described. However, a green chip can also be manufactured by using a sheet forming method.

Next, the binder removal process is performed on the green chip (step S109).
In the binder removal process, the atmosphere needs to be determined by the conductive material in the internal electrode precursor. When a noble metal is used as the conductive material, it may be performed in the atmosphere, an atmosphere having a higher oxygen partial pressure than the atmosphere, or a pure oxygen atmosphere. However, when using Cu or Ni as the conductive material, it is necessary to consider oxidation, and heating in a low oxygen reducing atmosphere should be employed. On the other hand, it is necessary to consider that an oxide contained in the piezoelectric layer precursor, such as PbO, is reduced in the binder removal process. For example, when Cu is used as the conductive material, it is preferable to set what reducing atmosphere is applied to the debinding process based on the equilibrium oxygen partial pressure of Cu and Cu ₂ O and the equilibrium oxygen partial pressure of Pb and PbO. .

  The temperature of the binder removal treatment is 300 ° C. to 650 ° C., and the time of the binder removal treatment needs to be determined depending on the temperature and atmosphere, but can be selected in the range of 0.5 to 50 hours. Further, the binder removal treatment can be performed independently of the firing and can be performed continuously with the firing. In the case where the firing is continuously performed, the binder removal process may be performed in the firing temperature increasing process.

After the binder removal process, firing (step S110) is performed.
When using Cu as a conductive material, firing is performed in a low oxygen reducing atmosphere. When a noble metal such as an Ag—Pd alloy is used as the conductive material, it may be fired in the atmosphere.
In the case of the present invention, the firing temperature can be 800-1050 ° C. When the firing temperature is less than 800 ° C., the piezoelectric ceramic composition of the present invention is not sufficiently fired, and when it exceeds 1050 ° C., there is a concern about melting of the conductive material. A preferable baking temperature is 850 to 1000 ° C, and a more preferable baking temperature is 900 to 950 ° C. The piezoelectric ceramic composition of the present invention can obtain a sufficiently dense fired body even at a temperature of 900 to 950 ° C.
As the low oxygen reducing atmosphere, the oxygen partial pressure is preferably 1 × 10 ⁻¹⁰ to 1 × 10 ⁻⁶ atm. If the oxygen partial pressure is less than 1 × 10 ⁻¹⁰ atm, an oxide contained in the piezoelectric layer precursor, such as PbO, may be reduced and deposited as metal Pb, which may lower the piezoelectric properties of the finally obtained fired body. In addition, when Cu exceeds 1 × 10 ⁻⁶ atm, there is a concern about oxidation when Cu is used as the electrode material. A more preferable oxygen partial pressure is 1 × 10 ⁻⁸ to 1 × 10 ⁻⁷ atm.

The laminated body 10 manufactured through the above steps is subjected to end face polishing by, for example, barrel polishing or sand blasting, and the terminal electrodes 21 and 22 are formed by printing or baking the terminal electrode paste described above (step S111). In addition to printing or baking, the terminal electrodes 21 and 22 can also be formed by sputtering.
Thus, the multilayer piezoelectric element 1 shown in FIG. 4 can be obtained.

In this example, Cu as the first subcomponent is added as Cu ₂ O and Co as the second subcomponent is added as CoO to the following main components so as to have the amounts shown in Table 1, The effect was investigated. The third subcomponent was added as follows.

Main component: (Pb _0.965 Sr _0.03 ) [(Zn _1/3 Nb _2/3 ) _0.02 Ti _0.46 Zr _0.52 ] O ₃
Third _{subcomponent:} WO 3 0.2 wt%

The piezoelectric ceramic composition was produced as follows. First, PbO powder, SrCO ₃ powder, ZnO powder, Nb ₂ O ₅ powder, TiO ₂ powder, and ZrO ₂ powder were prepared as raw materials for the main component, and weighed so as to have the composition of the main component. Cu ₂ O powder, CoO powder, and WO ₃ powder are prepared as additive species of the first subcomponent to the third subcomponent so that the amounts are as shown in Table 1 (first subcomponent, second subcomponent) and above. To the mother composition of the main component.
Next, these raw materials were wet-mixed for 16 hours using a ball mill, and calcined at 700 to 900 ° C. for 2 hours in the air.
The obtained calcined product was finely pulverized and then wet pulverized for 16 hours using a ball mill. After drying this, an acrylic resin was added as a binder for granulation, and it was formed into a disk shape having a diameter of 17 mm and a thickness of 1 mm using a uniaxial press molding machine at a pressure of about 445 MPa.

The obtained molded body was fired at 950 ° C. for 8 hours in a low oxygen reducing atmosphere (oxygen partial pressure 1 × 10 ⁻¹⁰ to 1 × 10 ⁻⁶ atm).
Further, the obtained sintered body was formed into a disk shape having a thickness of 0.6 mm by slicing and lapping, and processed into a shape capable of evaluating the piezoelectric constant d33. A silver paste was printed on both surfaces of the obtained sample and baked at 350 ° C., and an electric field of 3 kV was applied in 120 ° C. silicone oil for 15 minutes to carry out polarization treatment.
About the produced sample, the displacement when the voltage of 1.7 kV / mm was applied was measured with the laser Doppler displacement meter, and the piezoelectric constant d33 was calculated | required. The piezoelectric constant d33 is based on strain in the direction perpendicular to the electrode surface (thickness). The results are shown in Table 1.

As shown in Table 1, with only the main component, cracking occurred during polarization, and the piezoelectric constant d33 could not be evaluated. By containing the first subcomponent to the third subcomponent, an excellent piezoelectric constant d33 can be obtained even at 950 ° C. under high voltage. However, when the content of the first subcomponent (Cu ₂ O) exceeds 0.5 mass%, the piezoelectric constant d33 decreases to 690 pC / N or less. Further, when the second subcomponent (CoO) is not included, the piezoelectric constant d33 is as low as about 650 pC / N, but by adding CoO, the piezoelectric constant d33 exceeding 700 pC / N can be obtained.
In addition, when content of the 1st subcomponent-the 3rd subcomponent was measured after baking, it was in agreement with the addition amount. The same applies to the following embodiments.

A sample was prepared in the same manner as in Example 1 except that a was prepared as shown in Table 2 for the following main components, and the raw materials were adjusted as shown below for the first to third subcomponents. Produced. For the obtained sample, the piezoelectric constant d33 was obtained in the same manner as in Example 1. The results are shown in Table 2.
As shown in Table 2, when a is in the range of 0.96 to 1.03, the effect of improving the piezoelectric characteristics under high voltage can be enjoyed.

Main component: (Pb _{a -0.03} Sr _0.03 ) [(Zn _1/3 Nb _2/3 ) _0.02 Ti _0.46 Zr _0.52 ] O ₃
First subcomponent: 0.05% by mass of Cu ₂ O
Second subcomponent: CoO 0.05 mass%
Third _{subcomponent:} WO 3 0.2 wt%

Samples were prepared in the same manner as in Example 1 except that the raw materials were adjusted as shown in Table 3 for the following main components and as shown below for the first to third subcomponents. Produced. For the obtained sample, the piezoelectric constant d33 was obtained in the same manner as in Example 1. The results are shown in Table 3.
As shown in Table 3, when b is in the range of 0 to 0.1, the effect of improving the piezoelectric characteristics under a high voltage can be enjoyed.

Main component: (Pb _0.995-b Sr _b ) [(Zn _1/3 Nb _2/3 ) _0.02 Ti _0.46 Zr _0.52 ] O ₃
First subcomponent: 0.05% by mass of Cu ₂ O
Second subcomponent: CoO 0.05 mass%
Third _{subcomponent:} WO 3 0.2 wt%

A sample is prepared in the same manner as in Example 1 except that Me is an element shown in Table 4 with respect to the following main components, and the raw materials are adjusted as shown below for the first to third subcomponents. did. For the obtained sample, the piezoelectric constant d33 was obtained in the same manner as in Example 1. The results are shown in Table 4.
As shown in Table 4, even when Ca or Ba is used as a substitution element for Pb, the effect of improving the piezoelectric characteristics under a high voltage can be enjoyed similarly to Sr.

Main component: (Pb _0.965 Me _0.03 ) [(Zn _1/3 Nb _2/3 ) _0.02 Ti _0.46 Zr _0.52 ] O ₃
First subcomponent: 0.05% by mass of Cu ₂ O
Second subcomponent: CoO 0.05 mass%
Third _{subcomponent:} WO 3 0.2 wt%

The same as in Example 1 except that x, y, and z are values shown in Table 5 and the raw materials are adjusted as shown below for the first to third subcomponents with respect to the following main components. A sample was prepared. For the obtained sample, the piezoelectric constant d33 was obtained in the same manner as in Example 1. The results are shown in Table 5.
As apparent from Table 5, the x-, y-, and z-values of the B site element are in the range of 0.005 ≦ x ≦ 0.047, 0.42 ≦ y ≦ 0.53, and 0.45 ≦ z ≦ 0.56, respectively. Therefore, the effect of improving the piezoelectric characteristics under high voltage can be enjoyed.

Main component: (Pb _0.965 Sr _0.03 ) [(Zn _1/3 Nb _2/3 ) _x Ti _y Zr _z ] O ₃
First subcomponent: 0.05% by mass of Cu ₂ O
Second subcomponent: CoO 0.05 mass%
Third _{subcomponent:} WO 3 0.2 wt%

For the following main components, except that the third subcomponent is the type and amount shown in Table 6, and the raw material is adjusted so that the first subcomponent and the second subcomponent are the type and amount shown below, A sample was prepared in the same manner as in Example 1. For the obtained sample, the piezoelectric constant d33 was obtained in the same manner as in Example 1. The results are shown in Table 6.
As shown in Table 6, the effect of improving the piezoelectric characteristics under high voltage can be enjoyed by adding the third subcomponent.
Main component: (Pb _0.965 Sr _0.03 ) [(Zn _1/3 Nb _2/3 ) _0.02 Ti _0.46 Zr _0.52 ] O ₃
First subcomponent: 0.05% by mass of Cu ₂ O
Second subcomponent: CoO 0.05 mass%

For the following main components, except that the second subcomponent and the third subcomponent are the types and amounts shown in Table 7, and the raw materials are adjusted so that the first subcomponent has the types and amounts shown below, A sample was prepared in the same manner as in Example 1. For the obtained sample, the piezoelectric constant d33 was obtained in the same manner as in Example 1. The results are shown in Table 7.
As shown in Table 7, it can be seen that Ni, Mg, and Ga are also effective as the second subcomponent in addition to Co. In addition to W, Nb, Ta, and Sb are also effective as the third subcomponent.
Main component: (Pb _0.965 Sr _0.03 ) [(Zn _1/3 Nb _2/3 ) _0.02 Ti _0.46 Zr _0.52 ] O ₃
First subcomponent: 0.05% by mass of Cu ₂ O

Example 8 shows an example in which a multilayer piezoelectric element was produced.
In the production of the multilayer piezoelectric element, first, a vehicle is added to the piezoelectric ceramic composition powder obtained in the same manner as in Example 1-3 of Example 1 except that Cu ₂ O is not included, and the piezoelectric material is kneaded. A layer paste was prepared. At the same time, Cu powder as a conductive material was kneaded with a vehicle to produce an internal electrode paste. Subsequently, a green chip, which is a precursor of the multilayer body, was produced by a printing method using the piezoelectric layer paste and the internal electrode paste. The number of stacked piezoelectric layer pastes was 300.
Next, a binder removal treatment was performed, and firing was performed under reducing firing conditions to obtain a multilayer piezoelectric element. As reducing firing conditions, firing was performed at a firing temperature of 950 ° C. for 8 hours in a low oxygen reducing atmosphere (oxygen partial pressure of 1 × 10 ⁻¹⁰ to 1 × 10 ⁻⁶ atm). With respect to the obtained multilayer piezoelectric element, the Cu content of the piezoelectric layer was measured.

The Cu content was measured by ICP analysis. First, 1 g of Li ₂ B ₂ O ₇ was added to 0.1 g of the sample to be analyzed, and the ICP sample was melted at 1050 ° C. for 15 minutes. To the obtained melt, 0.2 g of (COOH) ₂ and 10 ml of HCl were added, dissolved by heating, and the volume was adjusted to 100 ml. The measurement was performed using ICP-AES (manufactured by Shimadzu Corporation, trade name ICPS-8000).

As a result, the piezoelectric layer contained about 0.05 mass% of Cu in terms of Cu ₂ O. Since this Cu does not contain Cu in the raw material of the piezoelectric ceramic composition, it is recognized that it diffused from the internal electrode paste during the firing process. For the obtained multilayer piezoelectric element, the piezoelectric constant d33 was measured in the same manner as in Example 1. Moreover, the high temperature accelerated lifetime was measured about the obtained laminated piezoelectric element. The results are shown in Table 8 (laminate). For the high temperature accelerated life, a voltage was applied to the sample so that the electric field strength was 8 kV / mm at a temperature of 250 ° C., and the change over time in the insulation resistance was determined. Here, the time until the insulation resistance of each sample decreased by an order of magnitude on the basis of the value immediately after the start of the test was measured as the lifetime, and was defined as the high temperature accelerated lifetime. For comparison, the same measurement was performed on the sample according to Example 1-3. The results are shown in Table 8 (bulk). As shown in Table 8, the piezoelectric constant d33 was the same, but the high temperature accelerated life was superior in the laminate in which Cu was diffused in the piezoelectric layer.

It is an element mapping image by EPMA of the sintered compact obtained by printing Cu paste. By addition of Cu 2 _O powder is an element mapping images by EPMA of the sintered body obtained. Is a TEM image of the sintered body obtained by adding Cu 2 _O powder. It is a figure which shows one structural example of the lamination type piezoelectric element in this Embodiment. It is a flowchart which shows the manufacture procedure of the lamination type piezoelectric element in this Embodiment.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Laminated piezoelectric element, 10 ... Laminated body, 11 ... Piezoelectric layer, 12 ... Internal electrode, 21, 22 ... Terminal electrode

Claims (3)

The main component is a complex oxide represented by the following composition formula (1) or (2),
For the main component,
As a first subcomponent, Cu is 0 <α ≦ 0.5 mass% in terms of Cu ₂ O conversion amount α,
As the second subcomponent, at least one selected from Co, Ni, Ga and Mg, Co, Ni and Ga are oxide equivalent amounts β, and Mg is carbonate equivalent amount β 0 <β ≦ 0.2 mass% ,
A piezoelectric ceramic composition comprising, as a third subcomponent, at least one selected from Ta, Nb, W and Sb in an oxide equivalent amount γ of 0 <γ ≦ 0.6 mass%.
Composition formula (1): Pb _a [(Zn _1/3 Nb _2/3 ) _x Ti _y Zr _z ] O ₃
A, x, y and z in the composition formula (1) are
0.96 ≦ a ≦ 1.03,
0.005 ≦ x ≦ 0.047,
0.42 ≦ y ≦ 0.53,
0.45 ≦ z ≦ 0.56,
x + y + z = 1 is satisfied.
Composition formula (2): (Pb _ab Me _b ) [(Zn _1/3 Nb _2/3 ) _x Ti _y Zr _z ] O ₃
A, b, x, y and z in the composition formula (2) are
0.96 ≦ a ≦ 1.03,
0 <b ≦ 0.1,
0.005 ≦ x ≦ 0.047,
0.42 ≦ y ≦ 0.53,
0.45 ≦ z ≦ 0.56,
While satisfying x + y + z = 1,
Me in the composition formula (2) represents at least one selected from Sr, Ca, and Ba. A plurality of piezoelectric layers composed of the piezoelectric ceramic composition according to claim 1;
A plurality of internal electrodes inserted between the piezoelectric layers;
A multilayer piezoelectric element comprising:   The internal electrode contains Cu, and the first subcomponent Cu is a part of Cu contained in the internal electrode diffused in the piezoelectric layer. Multilayer piezoelectric element.

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