JP4789696B2 - Semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device capable of transmitting and receiving data by wireless communication. Such a semiconductor device is called a wireless tag, an RF tag, an RFID tag, an IC tag, an ID tag, an electronic tag, a transponder, a wireless memory, an RFID chip, a wireless chip, an ID chip, a wireless IC card, an ID card, or the like. In particular, the present invention relates to a semiconductor device that receives a radio signal generated from a reader / writer with an antenna and generates a power supply voltage necessary for operation.

  In recent years, as described in the ubiquitous information society, an environment that can access an information network at any time and in any state has been developed. In such an environment, attention has been given to an individual recognition technique in which an ID (individual identification number) is given to each individual object, thereby clarifying the history of the object and making use of it for production, management, and the like. Among them, semiconductor devices capable of transmitting and receiving data by wireless communication (hereinafter also referred to as wireless tags) are beginning to be used.

  An example of a wireless communication system using a wireless tag is illustrated in FIG. The wireless communication system includes a reader / writer 300, a control terminal 302, and a wireless tag 303. The control terminal 302 controls the reader / writer 300. Wireless data transmission / reception is performed between the antenna 301 connected to the reader / writer 300 and the antenna 304 in the wireless tag 303.

  Wireless data transmission / reception is performed as follows. The antenna 304 in the wireless tag 303 receives the wireless signal output from the antenna 301 connected to the reader / writer 300. The radio signal is an electromagnetic wave modulated according to data to be transmitted. An electromagnetic wave for transmitting data is called a carrier wave, and a radio signal is also called a carrier wave modulated according to the data. A radio signal (modulated carrier wave 330) is received by the antenna 304, and input to the signal processing circuit 305 in the radio tag 303 to be processed. Thus, the wireless tag 303 acquires data included in the wireless signal (modulated carrier wave 330). Next, a signal including response data is output from the signal processing circuit 305. The antenna 304 in the wireless tag 303 transmits a wireless signal (modulated carrier wave 330) corresponding to the signal to the antenna 301 connected to the reader / writer 300. The wireless signal (modulated carrier wave 330) is received by the antenna 301, the reader / writer 300 acquires response data, and stores the obtained response data in the control terminal 302.

  When the antenna 304 in the wireless tag 303 receives a wireless signal (modulated carrier wave 330) output from the antenna 301 connected to the reader / writer 300, the wireless signal (modulated carrier wave 330) is converted into a band filter 306. Is input to the power supply circuit 307 in the wireless tag 303. The power supply circuit 307 generates a power supply voltage for driving an internal circuit (corresponding to the signal processing circuit 305 and the like) of the wireless tag 303 from the input wireless signal (modulated carrier wave 330).

  Specifically, the power supply circuit 307 includes a rectifier circuit 308 that converts an input radio signal (modulated carrier wave 330) into a DC signal, and a storage capacitor 309 that smoothes the DC signal. In this way, the power supply circuit 307 generates a DC voltage between the first terminal 310 and the second terminal 311. The generated DC voltage is supplied to the internal circuit of the wireless tag 303 as a power supply voltage.

As described above, for example, Patent Document 1 discloses a wireless tag that generates a power supply voltage for driving an internal circuit using a wireless signal (a modulated carrier wave 330).
JP 2002-319007 A

  In a wireless communication system using the wireless tag 303 as illustrated in FIG. 3A, a wireless signal (modulated carrier 330) and a power supply voltage generated using the wireless signal (modulated carrier 330) The relationship is schematically shown in FIG. The power supply voltage is indicated by a change in the potential 331 of the second terminal 311 with the potential 332 of the first terminal 310 being constant. As shown in FIG. 3B, a period in which a radio signal (modulated carrier wave 330) is normally output from the antenna 301 connected to the reader / writer 300 (denoted as period 1) and a period in which no radio signal is output (period) 2) are provided alternately. It is necessary to reduce the power supply voltage to zero or the potential 331 of the second terminal 311 to a potential close to the potential 332 of the first terminal 310 in a period in which the wireless signal (the modulated carrier wave 330) is not input.

  In the period (period 2) in which the wireless signal (the modulated carrier wave 330) is not input, the power supply voltage is reduced to zero or the potential 331 of the second terminal 311 is lowered to a potential close to the potential 332 of the first terminal 310. This is because the circuit in the wireless tag 303 is initialized by setting the power supply voltage of the wireless tag 303 to zero or a value close to zero at regular intervals. In this way, by initializing the circuit in the wireless tag 303 every time a new wireless signal (modulated carrier wave 330) is received, the wireless tag 303 accurately detects the signal transmitted from the reader / writer 300 in accordance with the standard. In addition, a signal conforming to the standard can be accurately transmitted to the reader / writer 300.

  However, there is a problem that the power supply voltage does not actually drop to zero, or the potential of the second terminal 311 does not drop to a potential close to the first terminal 310. That is, there is a problem that a power supply voltage of ΔV or more is always generated even during the period 2. In particular, this problem is serious when the capacitance value of the storage capacitor 309 included in the power supply circuit 307 is set large to several hundred pF in order to obtain a larger power supply voltage.

  In the period 2, the power supply voltage (the voltage between the first terminal 310 and the second terminal 311) does not become zero, or the potential of the second terminal 311 does not become a potential close to the first terminal 310. The wireless tag 303 cannot be sufficiently initialized. If the wireless tag 303 is not initialized, the wireless tag 303 cannot receive a signal transmitted from the reader / writer 300, and cannot transmit a response signal to the reader / writer 300. . If initialization is not performed and the wireless tag 303 fails to receive a signal once, all operations performed by the wireless tag 303 thereafter will malfunction.

  In view of the above circumstances, an object of the present invention is to efficiently initialize a semiconductor device in a semiconductor device that transmits and receives data by wireless communication.

  The semiconductor device of the present invention is a semiconductor device that generates a power supply voltage from a carrier wave, and a resistor is connected between a pair of terminals (first terminal and second terminal) that supply the power supply voltage to an internal circuit of the semiconductor device It is characterized by that.

  That is, the semiconductor device of the present invention includes an antenna, a power supply circuit, a circuit that uses a DC voltage generated by the power supply circuit as a power supply voltage, and a resistor. The antenna has a pair of terminals and receives a radio signal (modulated carrier wave). The power supply circuit has a first terminal and a second terminal, and generates a DC voltage between the first terminal and the second terminal using the received radio signal (modulated carrier wave). The resistor is connected between the first terminal and the second terminal.

  The semiconductor device of the present invention can be efficiently initialized. Thus, the semiconductor device of the present invention can accurately transmit and receive data. Further, since the semiconductor device of the present invention is initialized even if signal reception fails once, the subsequent operation can be performed normally. Thus, a highly reliable semiconductor device and a wireless communication system using the same can be obtained.

  Embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below.

(Embodiment 1)
A semiconductor device of the present invention will be described with reference to FIG. In FIG. 1, the same parts as those in FIG. 3 are denoted by the same reference numerals. The semiconductor device 101 includes an antenna 304, a band filter 306, a power supply circuit 307, a circuit that uses a DC voltage generated by the power supply circuit 307 as a power supply voltage (a signal processing circuit 305 is representatively shown), and a resistor 100. . The antenna 304 has a pair of terminals and receives a radio signal (a modulated carrier wave). The band filter 306 is connected between one of the pair of terminals of the antenna 304 and the input of the power supply circuit 307. The power supply circuit 307 includes a first terminal 310 and a second terminal 311, and the received wireless signal (modulated carrier wave) is used between the first terminal 310 and the second terminal 311. Generate DC voltage. The resistor 100 is connected between the first terminal 310 and the second terminal 311.

  The other of the pair of terminals of the antenna 304 and the first terminal 310 can have the same potential. The other of the pair of terminals of the antenna 304 and the first terminal 310 can be grounded.

  The power supply circuit 307 can be formed using the rectifier circuit 308 and the storage capacitor 309. The rectifier circuit 308 rectifies the radio signal (modulated carrier wave) and converts it into a DC signal. The storage capacitor 309 smoothes the DC signal output from the rectifier circuit 308. The signal smoothed by the storage capacitor 309 is output as a DC voltage between the first terminal 310 and the second terminal 311. The rectifier circuit 308 may be a circuit that performs full-wave rectification or a circuit that performs half-wave rectification.

  The resistor 100 can be a resistance element formed using a semiconductor layer. For example, the signal processing circuit 305 may be formed using a thin film transistor, and the resistor 100 may be formed using a semiconductor layer that is formed at the same time as a semiconductor layer serving as an active layer of the thin film transistor. In this case, an impurity element imparting conductivity type may be added to the semiconductor layer forming the resistor 100. A resistance manufactured using a semiconductor layer to which an impurity element imparting conductivity is added reduces variation in resistance value more than a resistor manufactured using a semiconductor layer to which an impurity element imparting conductivity is not added. be able to. In particular, when a polycrystalline semiconductor film is used as a semiconductor layer for forming the resistor 100, variation in resistance value due to variation in crystallinity of the film becomes remarkable. Therefore, it is effective to add an impurity element imparting a conductivity type to the semiconductor layer forming the resistor 100.

  In addition, an impurity element imparting a conductivity type may be added to the semiconductor layer forming the resistor 100 to the same extent as the channel formation region of the thin film transistor. In the case where a non-single-crystal semiconductor film manufactured by a CVD method or the like is used as the semiconductor layer, it is known that the manufactured non-single-crystal semiconductor film exhibits some n-type conductivity. By adding an impurity element imparting a conductivity type to the non-single-crystal semiconductor film, the conductivity of the semiconductor layer can be made close to intrinsic and a high resistance value can be ensured. In addition, since a resistor can be manufactured using a manufacturing process of a thin film transistor included in the signal processing circuit 305, manufacturing cost of a semiconductor device can be suppressed and yield can be improved.

  As the resistor 100, a diode or a thin film transistor may be used. For example, a thin film transistor in which diode connection (gate and drain are electrically connected) may be used.

  The frequency of the carrier wave is sub-millimeter wave of 300 GHz to 3 THz, millimeter wave of 30 GHz to less than 300 GHz, microwave of 3 GHz to less than 30 GHz, ultra high frequency of 300 MHz to less than 3 GHz, ultra high frequency of 30 MHz to less than 300 MHz, short wave Any frequency of 3 MHz to less than 30 MHz, medium wave of 300 kHz to less than 3 MHz, long wave of 30 kHz to less than 300 kHz, and super long wave of 3 kHz to less than 30 kHz can be used.

  As the antenna 304, any of a dipole antenna, a patch antenna, a loop antenna, and a Yagi antenna can be used.

  A method for transmitting and receiving a radio signal (modulated carrier wave) in the antenna 304 may be any of an electromagnetic coupling method, an electromagnetic induction method, and a radio wave method.

  In the wireless communication system of the present invention, a semiconductor device 101 and a reader / writer having a known configuration, an antenna connected to the reader / writer, and a control terminal for controlling the reader / writer can be used. The communication method between the semiconductor device 101 and the antenna connected to the reader / writer is unidirectional communication or bidirectional communication, and is a space division multiplexing method, a polarization plane division multiplexing method, a frequency division multiplexing method, a time division method. Any of a multiplexing scheme, a code division multiplexing scheme, and an orthogonal frequency division multiplexing scheme can be used.

  In the wireless communication system of the present invention using the semiconductor device 101, a power supply voltage (a potential 332 of the first terminal 310) generated using a wireless signal (a modulated carrier wave) and a wireless signal (a modulated carrier wave) is constant. 4A is shown in FIG. 4A. FIG. 4A shows the relationship between the second terminal 311 and the potential 331. FIG. 4 shows the relationship between a radio signal (modulated carrier wave) and a power supply voltage generated using the radio signal (modulated carrier wave) in a wireless communication system using a conventional semiconductor device (wireless tag 303). Shown in (B).

  In FIG. 4, a first signal 401 is a signal corresponding to data transmitted from the reader / writer. An example in which a carrier wave is amplitude-modulated as the first signal 401 is shown. The modulation of the carrier wave is analog modulation or digital modulation, and may be any of amplitude modulation, phase modulation, frequency modulation, and spread spectrum.

  In the wireless communication system using the semiconductor device of the present invention, as shown in FIG. 4A, the power supply voltage is set to zero in the period (period 2) in which the wireless signal (modulated carrier wave 330) is not input, or the second The potential 331 of the terminal 311 can be lowered to a potential close to the potential 332 of the first terminal 310. Therefore, the semiconductor device that has received the first signal 401 transmitted from the reader / writer transmits the second signal 402 corresponding to the response data, and normally transmits and receives data.

  On the other hand, in a wireless communication system using a conventional semiconductor device, as shown in FIG. 4B, the power supply voltage is set to zero in a period (period 2) in which a wireless signal (modulated carrier wave 330) is not input, The potential 331 of the second terminal 311 cannot be lowered to a potential close to the potential 332 of the first terminal 310, and a power supply voltage of ΔV or more is always generated. Therefore, the semiconductor device that has received the first signal 401 transmitted from the reader / writer cannot respond (see the waveform 444 in FIG. 4B), and malfunctions in data transmission / reception.

  As described above, according to the present invention, it is possible to provide a semiconductor device that normally transmits and receives data and a wireless communication system using the semiconductor device.

(Embodiment 2)
In this embodiment, an example of the signal processing circuit 305 in the semiconductor device 101 described in Embodiment 1 is described with reference to FIGS. 2 that are the same as those in FIG. 1 are denoted by the same reference numerals, and description thereof is omitted.

  The signal processing circuit 305 includes a band filter 200, a demodulation circuit 201, an analysis circuit 202, and a memory 203. A radio signal (modulated carrier wave) received by the antenna 304 is input to the demodulation circuit 201 via the band filter 200. The demodulation circuit 201 demodulates information from a radio signal (modulated carrier wave). The analysis circuit 202 analyzes the information demodulated by the demodulation circuit 201 and outputs corresponding data. The memory 203 operates based on the data analyzed by the analysis circuit 202. That is, the memory 203 stores the data analyzed by the analysis circuit 202. Alternatively, the memory 203 reads data stored in the memory 203. The data stored in the memory 203 may be data stored when the semiconductor device 101 is manufactured, or may be data received by the semiconductor device 101 through wireless communication and stored in the memory 203. As the memory 203, a memory capable of rewriting data, a memory incapable of rewriting data, or both of them may be used.

  The memory 203 provided in the semiconductor device includes a DRAM (Dynamic Random Access Memory), a SRAM (Static Random Access Memory), a FeRAM (Ferroelectric Random Access Memory), and a mask ROM (Read Only Memory). An EEPROM (Electrically Erasable and Programmable Read Only Memory) or a flash memory can be used.

  The signal processing circuit 305 can further include a coding circuit 204 and a modulation circuit 205. The encoding circuit 204 encodes the data stored in the memory 203 in accordance with a predetermined standard and converts it into corresponding information. The modulation circuit 205 outputs a signal modulated according to the information encoded by the encoding circuit 204.

  The encoding circuit 204 has a circuit configuration that enables encoding in accordance with standards such as Manchester encoding, NRZ (Non Return Zero) encoding, and Miller encoding.

  Although FIG. 2 shows an example in which the band filter 200 is provided separately from the band filter 306, the present invention is not limited to this. The band filter 200 and the band filter 306 can also be shared.

  This embodiment mode can be implemented by being freely combined with Embodiment Mode 1.

(Embodiment 3)
In this embodiment, an example of a reader / writer in a wireless communication system using the semiconductor device 101 described in Embodiment 1 or 2 will be described with reference to FIGS.

  The reader / writer 500 includes an oscillation circuit 501, an encoding circuit 502, a modulation circuit 503, an amplification circuit 504, a band filter 506, an amplification circuit 507, a demodulation circuit 508, and an analysis circuit 509. An antenna 505 is connected to the reader / writer 500.

  First, a case where the reader / writer 500 transmits a signal will be described. The oscillation circuit 501 generates a signal having a predetermined frequency. The generated signal is input to the modulation circuit 503. The encoding circuit 502 encodes transmission data input from the control terminal 510 and converts it into corresponding information. The modulation circuit 503 modulates the signal according to the encoded information. The modulated signal is input to the amplifier circuit 504 and amplified. The amplified signal is transmitted as a radio signal (modulated carrier wave) from the antenna 505.

  Next, a case where the reader / writer 500 receives a signal will be described. A radio signal (modulated carrier wave) is received by an antenna 505. The received radio signal (modulated carrier wave) is input to the band filter 506 to remove noise and the like. The signal that has passed through the bandpass filter is input to the amplifier circuit 507 and amplified. The amplified signal is input to the demodulation circuit 508. The demodulation circuit 508 demodulates information from the input signal. The demodulated information is input to the analysis circuit 509. The analysis circuit 509 analyzes the input information and obtains received data. The obtained reception data is output to the control terminal 510.

  The encoding circuit 502 has a circuit configuration that can perform encoding in accordance with standards such as Manchester encoding, NRZ (Non Return Zero) encoding, and Miller encoding.

  As the antenna 505, any of a dipole antenna, a patch antenna, a loop antenna, and a Yagi antenna can be used.

  A method of transmitting and receiving a radio signal (modulated carrier wave) in the antenna 505 may be any of an electromagnetic coupling method, an electromagnetic induction method, and a radio wave method.

  This embodiment mode can be implemented by being freely combined with Embodiment Mode 1 and Embodiment Mode 2.

  In this embodiment, a specific structure of the semiconductor device of the present invention will be described with reference to FIGS.

  6A to 6D illustrate structural examples of the antenna 304 in the semiconductor device 101 illustrated in FIGS. There are two ways to provide the antenna 304, and one (hereinafter referred to as a first antenna installation method) is shown in FIGS. 6A and 6C. The other (hereinafter referred to as a second antenna installation method) is shown in FIGS. 6B and 6D. 6C corresponds to a cross-sectional view taken along lines A to A ′ in FIG. 6A, and FIG. 6D corresponds to a cross-sectional view taken along lines B to B ′ in FIG.

  In the first antenna installation method, an antenna 304 is provided over a substrate 600 over which a plurality of elements (hereinafter referred to as an element group 601) is provided (see FIGS. 6A and 6C). The element group 601 forms a circuit other than the antenna of the semiconductor device of the present invention. The element group 601 includes a plurality of thin film transistors and a resistor 100. The resistor 100 is formed using a semiconductor layer 660 which is formed at the same time as the semiconductor layer 662 which is an active layer of the thin film transistor. In the structure illustrated, the conductive film functioning as the antenna 304 is provided in the same layer as the wiring connected to the source and drain of the thin film transistor included in the element group 601. However, the conductive film functioning as the antenna 304 may be provided in the same layer as the gate electrode 664 of the thin film transistor included in the element group 601, or an insulating film is provided over the element film 601 so as to cover the element group 601. Also good.

  In the second antenna installation method, the terminal portion 602 is provided on the substrate 600 provided with the element group 601. Then, an antenna 304 provided over a substrate 610 which is different from the substrate 600 is connected so as to be connected to the terminal portion 602 (see FIGS. 6B and 6D). In the structure shown in the drawing, part of the wiring connected to the source and drain of the thin film transistor included in the element group 601 is used as the terminal portion 602. Then, the substrate 600 and the substrate 610 provided with the antenna 304 are attached to each other so as to be connected to the terminal portion 602. Conductive particles 603 and a resin 604 are provided between the substrate 600 and the substrate 610. The antenna 304 and the terminal portion 602 are electrically connected by the conductive particles 603.

  A structure and a manufacturing method of the element group 601 will be described. If a plurality of element groups 601 are formed on a large-area substrate and then completed by being divided, an inexpensive device can be provided. As the substrate 600, for example, a glass substrate such as barium borosilicate glass or alumino borosilicate glass, a quartz substrate, a ceramic substrate, or the like can be used. Alternatively, a semiconductor substrate having an insulating film formed on the surface thereof may be used. A substrate made of a synthetic resin having flexibility such as plastic may be used. The surface of the substrate may be planarized by polishing such as CMP. Further, a glass substrate, a quartz substrate, or a substrate obtained by polishing and thinning a semiconductor substrate may be used.

  As the base film 661 provided over the substrate 600, an insulating film such as silicon oxide, silicon nitride, or silicon nitride oxide can be used. The base film 661 can prevent alkali metal such as Na or alkaline earth metal contained in the substrate 600 from diffusing into the semiconductor layer 662 and adversely affecting the characteristics of the thin film transistor. In FIG. 6, the base film 661 has a single-layer structure, but it may be formed of two or more layers. Note that the base film 661 is not necessarily provided when diffusion of impurities such as a quartz substrate does not cause any problem.

Note that the surface of the substrate 600 may be directly processed by high-density plasma. The high density plasma is generated by using a high frequency of 2.45 GHz, for example. As the high density plasma, one having an electron density of 10 ¹¹ to 10 ¹³ / cm ³ , an electron temperature of 2 eV or less, and an ion energy of 5 eV or less is used. As described above, high-density plasma characterized by low electron temperature has low kinetic energy of active species, and thus can form a film with less plasma damage and fewer defects than conventional plasma treatment. Plasma can be generated using a high-frequency excitation plasma processing apparatus using a radial slot antenna. The distance from the antenna that generates a high frequency to the substrate 600 is 20 to 80 mm (preferably 20 to 60 mm).

A nitriding atmosphere such as nitrogen (N) and a rare gas (including at least one of He, Ne, Ar, Kr, and Xe) atmosphere, nitrogen, hydrogen (H), a rare gas atmosphere, or ammonia (NH ₃ ) In the rare gas atmosphere, the surface of the substrate 600 can be nitrided by performing the high-density plasma treatment. When glass, quartz, silicon wafer, or the like is used as the substrate 600, the nitride layer formed on the surface of the substrate 600 contains silicon nitride as a main component, so that it can be used as a blocking layer for impurities diffused from the substrate 600 side. can do. A silicon oxide film or a silicon oxynitride film may be formed over the nitride layer by a plasma CVD method to form the base film 661.

  Further, by performing similar high-density plasma treatment on the surface of the base film 661 made of silicon oxide, silicon oxynitride, or the like, the surface and the depth of 1 to 10 nm can be nitrided from the surface. This very thin silicon nitride layer is preferable because it functions as a blocking layer and is less affected by stress on the semiconductor layer 662 and the semiconductor layer 660 formed thereover.

  As the semiconductor layer 662 and the semiconductor layer 660, a crystalline semiconductor film or an amorphous semiconductor film processed into an arbitrary shape can be used. Further, an organic semiconductor film may be used. The crystalline semiconductor film can be obtained by crystallizing an amorphous semiconductor film. As a crystallization method, a laser crystallization method, a thermal crystallization method using an RTA or a furnace annealing furnace, a thermal crystallization method using a metal element that promotes crystallization, or the like can be used. The semiconductor layer 662 includes a channel formation region 662a and a pair of impurity regions 662b to which an impurity element imparting a conductivity type is added. Note that although the structure including the low-concentration impurity region 662c to which the impurity element is added at a lower concentration than the impurity region 662b is shown between the channel formation region 662a and the pair of impurity regions 662b, the invention is not limited thereto. A structure in which the low concentration impurity region 662c is not provided may be employed. The semiconductor layer 660 may or may not contain an impurity element that imparts conductivity type to the entire semiconductor layer 660. In the case where an impurity element imparting conductivity is added, the semiconductor layer 660 may be doped with the same amount of impurity elements imparting conductivity as the pair of impurity regions 662b of the thin film transistor, or the low-concentration impurity region 662c. An impurity element imparting a conductivity type may be added to the same extent.

  Note that the semiconductor layer 662, the semiconductor layer 660, and wirings formed at the same time as these semiconductor layers are preferably led so that corners are rounded when viewed from a direction perpendicular to the top surface of the substrate 600. The wiring routing method is schematically shown in FIG. In FIG. 15, a direction 351 perpendicular to the upper surface of the substrate 600 is shown. A wiring formed simultaneously with the semiconductor layer is indicated by a wiring 361 in the figure. FIG. 15A shows a conventional wiring routing method. FIG. 15B shows a wiring routing method according to the present invention. The corner 1502a of the wiring 361 of the present invention is rounded with respect to the corner 1501a of the conventional wiring 361. By rounding the corner, it is possible to prevent dust and the like from remaining at the corner of the wiring. Thus, defects due to dust in the semiconductor device can be reduced and the yield can be increased.

  An impurity element imparting a conductivity type may be added to the channel formation region 662a of the thin film transistor. Thus, the threshold voltage of the thin film transistor can be controlled. In this case, the semiconductor layer 660 may have a structure in which an impurity element imparting a conductivity type is added to the same degree as the channel formation region 662a of the thin film transistor.

The first insulating film 663 can be formed using silicon oxide, silicon nitride, silicon nitride oxide, or the like and by stacking a single layer or a plurality of films. In this case, the surface of the first insulating film 663 may be densified by treatment with high-density plasma in an oxidizing atmosphere or a nitriding atmosphere, and oxidizing or nitriding treatment. The high density plasma is generated by using a high frequency of 2.45 GHz, for example, as described above. As the high density plasma, one having an electron density of 10 ¹¹ to 10 ¹³ / cm ³ , an electron temperature of 2 eV or less, and an ion energy of 5 eV or less is used. Plasma can be generated using a high-frequency excitation plasma processing apparatus using a radial slot antenna. In the apparatus for generating high-density plasma, the distance from the antenna that generates high frequency to the substrate 600 is set to 20 to 80 mm (preferably 20 to 60 mm).

  Note that before the first insulating film 663 is formed, the surface of the semiconductor layer 662 and the semiconductor layer 660 may be subjected to the above high-density plasma treatment, and the surface of the semiconductor layer may be oxidized or nitrided. At this time, when the temperature of the substrate 600 is set to 300 to 450 ° C. and treatment is performed in an oxidizing atmosphere or a nitriding atmosphere, a favorable interface can be formed with the first insulating film 663 deposited thereon.

The nitriding atmosphere may be a nitrogen (N) and rare gas (including at least one of He, Ne, Ar, Kr, and Xe) atmosphere, a nitrogen and hydrogen (H) and rare gas atmosphere, or ammonia (NH ₃ ) And a noble gas atmosphere. As the oxidizing atmosphere, an oxygen (O) and rare gas atmosphere, an oxygen and hydrogen (H) and rare gas atmosphere, or a dinitrogen monoxide (N ₂ O) and rare gas atmosphere can be used.

  As the gate electrode 664, one kind of element selected from Ta, W, Ti, Mo, Al, Cu, Cr, and Nd, or an alloy or compound containing a plurality of such elements can be used. Alternatively, a single layer or a stacked structure including any of these elements, alloys, and compounds can be used. In the figure, a gate electrode 664 having a two-layer structure is shown. Note that the gate electrode 664 and the wiring formed at the same time as the gate electrode 664 are preferably led so that corners are rounded when viewed from a direction perpendicular to the top surface of the substrate 600. The routing method can be the same as the method shown in FIG. A wiring formed at the same time as the gate electrode 664 and the gate electrode 664 is indicated by a wiring 362 in the drawing. By rounding the corner portion 1501b of the conventional wiring 362 like the corner portion 1502b of the wiring 362 of the present invention, dust and the like can be prevented from remaining in the corner portion of the wiring. Thus, defects due to dust in the semiconductor device can be reduced and the yield can be increased.

  The thin film transistor includes a semiconductor layer 662, a gate electrode 664, and a first insulating film 663 that functions as a gate insulating film between the semiconductor layer 662 and the gate electrode 664. In this embodiment, the thin film transistor is shown as a top gate type transistor, but it may be a bottom gate type transistor having a gate electrode below the semiconductor layer, or a dual gate type having gate electrodes above and below the semiconductor layer. This transistor may be used.

The second insulating film 667 is preferably a barrier insulating film that blocks ionic impurities, such as a silicon nitride film. The second insulating film 667 is formed using silicon nitride or silicon oxynitride. The second insulating film 667 functions as a protective film that prevents contamination of the semiconductor layer 662 and the semiconductor layer 660. After the second insulating film 667 is deposited, the second insulating film 667 may be hydrogenated by introducing hydrogen gas and performing high-density plasma treatment as described above. Alternatively, ammonia (NH ₃ ) gas may be introduced to nitride and hydrogenate the second insulating film 667. Alternatively, oxynitriding treatment and hydrogenation treatment may be performed by introducing oxygen, dinitrogen monoxide (N ₂ O) gas, or the like and hydrogen gas. By this method, the surface of the second insulating film 667 can be densified by performing nitriding treatment, oxidation treatment, or oxynitridation treatment. Thus, the function of the second insulating film 667 as a protective film can be enhanced. Hydrogen introduced into the second insulating film 667 is then released by heat treatment at 400 to 450 ° C., so that the semiconductor layer 662 and the semiconductor layer 660 can be hydrogenated. Note that this hydrogenation treatment may be combined with a hydrogenation treatment using the first insulating film 663.

  As the third insulating film 665, a single layer or a stacked structure of an inorganic insulating film or an organic insulating film can be used. As the inorganic insulating film, a silicon oxide film formed by a CVD method, a silicon oxide film formed by an SOG (Spin On Glass) method, or the like can be used. As an organic insulating film, polyimide, polyamide, BCB (benzoic acid) is used. A film such as cyclobutene), acrylic or positive photosensitive organic resin, or negative photosensitive organic resin can be used.

  Alternatively, the third insulating film 665 can be formed using a material having a skeleton structure formed of a bond of silicon (Si) and oxygen (O). As a substituent of this material, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group may be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent.

  As the wiring 666, one kind of element selected from Al, Ni, W, Mo, Ti, Pt, Cu, Ta, Au, and Mn or an alloy containing a plurality of such elements can be used. Alternatively, a single layer or a stacked structure including any of these elements, alloys, and compounds can be used. In the figure, an example of a single layer structure is shown. Note that the wiring 666 is preferably led so that corners are rounded when viewed from a direction perpendicular to the top surface of the substrate 600. The routing method can be the same as the method shown in FIG. A wiring 666 is indicated by a wiring 363 in the drawing. By rounding the corner portion 1501c of the conventional wiring 363 like the corner portion 1502c of the wiring 363 of the present invention, dust or the like can be prevented from remaining in the corner portion of the wiring. Thus, defects due to dust in the semiconductor device can be reduced and the yield can be increased. In the structures illustrated in FIGS. 6A and 6C, the wiring 666 serves as the antenna 304 and the wiring connected to the source and drain of the thin film transistor. In the structures illustrated in FIGS. 6B and 6D, the wiring 666 serves as a terminal connected to the source and drain of the thin film transistor and the terminal portion 602. In FIG. 15, a contact hole 352 connecting the wiring 666 and the source and drain of the thin film transistor is shown.

  Note that the antenna 304 can be formed by a droplet discharge method using a conductive paste containing nanoparticles such as Au, Ag, and Cu. The droplet discharge method is a general term for a method of forming a pattern by discharging droplets, such as an inkjet method or a dispenser method, and has advantages such as improvement in material utilization efficiency.

  In the structure illustrated in FIGS. 6A and 6C, a fourth insulating film 668 is formed over the wiring 666. As the fourth insulating film 668, a single layer or a stacked structure of an inorganic insulating film or an organic insulating film can be used. The fourth insulating film 668 functions as a protective layer for the antenna 304.

  Further, the element group 601 formed over the substrate 600 (see FIG. 7A) may be used as it is, but the element group 601 on the substrate 600 is peeled off (see FIG. 7B), The element group 601 may be attached to the flexible substrate 701 (see FIG. 7C). The flexible substrate 701 has flexibility, and for example, a plastic substrate such as polycarbonate, polyarylate, or polyether sulfone, or a ceramic substrate can be used.

  Peeling of the element group 601 from the substrate 600 can be performed by (A) providing a peeling layer between the substrate 600 and the element group 601 in advance and removing the peeling layer with an etching agent. . Alternatively, (B) a method in which the peeling layer is partially removed using an etchant and then the substrate 600 and the element group 601 are physically peeled off can be used. Alternatively, (C) a method of separating the element group 601 by mechanically removing the substrate 600 with the element group 601 formed or removing the substrate 600 by etching with a solution or a gas can be used. It should be noted that peeling by physical means means peeling by applying stress from the outside, for example, peeling by applying stress from the wind pressure of a gas blown from a nozzle or ultrasonic waves. .

  As a more specific method of the above (A) or (B), a metal oxide film is provided between the substrate 600 having high heat resistance and the element group 601, and the metal oxide film is weakened by crystallization, whereby the element A method for peeling the group 601 can be used. As another specific method, an amorphous silicon film containing hydrogen is provided between the substrate 600 having high heat resistance and the element group 601, and the amorphous silicon film is removed by laser light irradiation or etching. Thus, a method of peeling the element group 601 can be used.

  The peeled element group 601 may be attached to the flexible substrate 701 using a commercially available adhesive, for example, an adhesive such as an epoxy resin adhesive or a resin additive.

  When the element group 601 is attached to a flexible substrate 701 on which an antenna is formed and is electrically connected to the antenna, the semiconductor device is completed which is thin, light, and difficult to break even when dropped (FIG. 7C). reference). When an inexpensive flexible substrate 701 is used, an inexpensive semiconductor device can be provided. Further, since the flexible substrate 701 has flexibility, the flexible substrate 701 can be bonded onto a curved surface or an irregular shape, thereby realizing a wide variety of uses. For example, a wireless tag 720 which is one embodiment of the semiconductor device of the present invention can be attached to a curved surface such as a medicine bottle (see FIG. 7D). Further, when the substrate 600 is reused, a semiconductor device can be manufactured at low cost.

  This embodiment can be freely combined with the above embodiment modes.

  In this embodiment, an embodiment in which the semiconductor device of the present invention is configured to be flexible will be described. FIG. 8 is used for the description. 8A, the semiconductor device includes a flexible protective layer 801, a flexible protective layer 803 including an antenna 802, and an element group 804 formed by a peeling process or thinning of a substrate. The element group 804 can have a configuration similar to that shown as the element group 601 in Example 1, for example. The antenna 802 formed over the protective layer 803 is electrically connected to the element group 804. In FIG. 8, the antenna 802 is formed only over the protective layer 803; however, the present invention is not limited to this structure, and the antenna 802 may also be formed over the protective layer 801. Note that a barrier film formed of a silicon nitride film or the like is preferably formed between the element group 804 and the protective layer 801 and the protective layer 803. Then, a semiconductor device with improved reliability can be provided without the element group 804 being contaminated.

  The antenna 802 can be formed of Ag, Cu, or a metal plated with them. The element group 804 and the antenna 802 can be connected by using an anisotropic conductive film and performing ultraviolet treatment or ultrasonic treatment. Note that the element group 804 and the antenna 802 may be bonded using a conductive paste or the like.

  A semiconductor device is completed by sandwiching the element group 804 between the protective layer 801 and the protective layer 803 (see arrows in FIG. 8A).

A cross-sectional structure of the semiconductor device thus formed is shown in FIG. The thickness 340 of the sandwiched element group 804 may be 5 μm or less, preferably 0.1 μm to 3 μm. Further, when the thickness when the protective layer 801 and the protective layer 803 are overlapped is d, the thickness of the protective layer 801 and the protective layer 803 is preferably (d / 2) ± 30 μm, more preferably (d / 2) Set to ± 10 μm. The thickness of the protective layer 801 and the protective layer 803 is preferably 10 μm to 200 μm. Further, the area of the element group 804 is 10 mm square (100 mm ² ) or less, and preferably 0.3 mm square to 4 mm square (0.09 mm ^{2 to} 16 mm ² ).

  Since the protective layer 801 and the protective layer 803 are formed of an organic resin material, the protective layer 801 and the protective layer 803 have strong characteristics against bending. In addition, the element group 804 itself formed by a peeling process or thinning of a substrate also has a strong characteristic against bending compared to a single crystal semiconductor. Since the element group 804 and the protective layer 801 and the protective layer 803 can be in close contact with each other without a gap, the completed wireless tag itself has a strong characteristic against bending. The element group 804 surrounded by the protective layer 801 and the protective layer 803 may be arranged on the surface or inside of another solid object, or may be embedded in paper.

  The case where a semiconductor device including the element group 804 is attached to a substrate having a curved surface will be described. FIG. 8C is used for the description. In the drawing, one transistor 881 selected from the element group 804 is shown. In accordance with the potential of the gate electrode 807, the transistor 881 allows a current to flow from one of the source and drain 805 to the other of the source and drain 806. The transistor 881 is arranged so that the direction in which the current of the transistor 881 flows (carrier movement direction 341) and the direction in which the substrate 880 draws an arc are orthogonal to each other. With such an arrangement, even when the substrate 880 is bent so as to draw an arc, the influence of stress applied to the transistor 881 is small, and variation in characteristics of the transistor 881 included in the element group 804 can be suppressed.

  This embodiment can be freely combined with the above embodiment mode and Embodiment 1.

  In this embodiment, a more specific structure of the semiconductor device of the present invention will be described. FIG. 9 is used for the description. 9, the same parts as those in FIGS. 1 and 2 are denoted by the same reference numerals, and description thereof is omitted.

  The semiconductor device 101 illustrated in FIG. 9 includes a resonance capacitor 901 connected in parallel with the antenna 304. The resonant capacitor 901 makes it easy to receive a radio signal having a predetermined frequency.

  The analysis circuit 202 includes a clock correction / counter circuit 902 and a code extraction / code recognition / determination circuit 903. The clock correction / counter circuit 902 generates a control signal for controlling other circuits from the received signal. The code extraction / code recognition / determination circuit 903 analyzes the information output from the demodulation circuit 201 using the control signal in accordance with a predetermined rule. Thus, the analysis circuit 202 analyzes the information and outputs data.

  The memory 203 has a memory controller 904 and a mask ROM 905. The memory controller 904 uses the data output from the analysis circuit 202 to generate a signal for operating the mask ROM. Thus, the memory controller 904 controls output of information from the mask ROM 905, and the memory 203 outputs information.

  Note that the semiconductor device 101 illustrated in FIG. 9 is an example in which capacitive elements are used as the band-pass filter 306 and the band-pass filter 200. One of the pair of electrodes of the capacitive element of the band-pass filter 306 can be connected to one of the pair of terminals of the antenna 304, and the other can be connected to the input of the power supply circuit 307. One of the pair of electrodes of the capacitive element of the band-pass filter 200 may be connected to one of the pair of terminals of the antenna 304, and the other may be connected to the input of the demodulation circuit 201. Note that the capacitive element of the band-pass filter 200 and the capacitive element of the band-pass filter 306 can be shared as in the band-pass filter 3060 in FIG.

  This embodiment can be freely combined with the above embodiment mode, Embodiment 1 and Embodiment 2.

  In this embodiment, an example in which the semiconductor device shown in FIG. 9 in Embodiment 3 is actually manufactured will be described. 10 and 11 are used for the description.

  FIG. 10 is a mask drawing of the circuit 1000 other than the antenna 304 of the semiconductor device 101. 10, the same parts as those in FIG. 9 are denoted by the same reference numerals, and the description thereof is omitted. The resistor 100 was formed using a semiconductor layer formed at the same time as a semiconductor layer serving as an active layer of a thin film transistor constituting another circuit.

  FIG. 11 is a mask drawing of the semiconductor device 101 including the antenna 304. In FIG. 11, the same parts as those in FIG. 9 are denoted by the same reference numerals, and the description thereof is omitted.

  This embodiment can be freely combined with the above embodiment mode and Embodiments 1 to 3.

  FIG. 12 shows the results of measuring the characteristics of the semiconductor device 101 of the present invention. The measurement was performed by changing the electric resistance value of the resistor 100 in the range of 500 kΩ to 2 MΩ. For comparison, a sample without the resistor 100 was also produced. As a measurement result, a waveform of a signal applied to an antenna connected to the reader / writer (denoted as RW output in the figure) and a waveform of a power supply voltage of a semiconductor device that transmits / receives data to / from the reader / writer (in the figure, Power supply voltage). The frequency of the carrier wave was 13.56 MHz. The potential of the first terminal 310 was a ground potential (denoted as GND in the drawing). The storage capacitor 309 was 500 pF. 12, the same parts as those in FIG. 4 are denoted by the same reference numerals. The waveform of the modulated carrier wave in FIG. 4 corresponds to the RW output in FIG.

  FIG. 12A shows a measurement result of characteristics of the semiconductor device 101 using the resistor 100 having an electric resistance value of 500 kΩ. FIG. 12B shows measurement results of characteristics of a semiconductor device (conventional semiconductor device) in which the resistor 100 is not provided.

  In the semiconductor device 101 illustrated in FIG. 12A, the power supply voltage is zero or the potential of the second terminal 311 is close to the first terminal 310 in the period without the RW output (period 2). It turns out that it is. Further, in the RW output, when the first signal 401 is output to the semiconductor device 101, the second signal 402 responding to the first signal 401 is output from the semiconductor device 101 and appears in the RW output. On the other hand, in the conventional semiconductor device illustrated in FIG. 12B, the power supply voltage is not zero or the potential of the second terminal 311 is set to the first terminal 310 in a period (period 2) in which there is no RW output. The potential is not close to. In addition, in the RW output, even if the first signal 401 is output to the semiconductor device, a signal responding to the first signal 401 is not output from the semiconductor device 101 (see the waveform 444 in FIG. 12B). ).

  As described above, by using the resistor 100 having an electric resistance value of 500 kΩ or more and 2 MΩ or less, the semiconductor device 101 can be initialized and operated normally.

  In FIG. 12, when the first signal 401 is output from the reader / writer, the power supply voltage fluctuates due to the influence (indicated as 401 'in the figure). Further, when the semiconductor device 101 responds, that is, when the second signal 402 is output, the power supply voltage fluctuates due to the influence (denoted as 402 ′ in the drawing). These fluctuations in the power supply voltage do not impair the effects of the present invention.

  This embodiment can be freely combined with the above embodiment mode and Embodiments 1 to 4.

  In this embodiment, the use of the semiconductor device 101 of the present invention will be described with reference to FIGS. The semiconductor device 101 includes, for example, banknotes, coins, securities, bearer bonds, certificates (driver's license, resident card, etc., see FIG. 14A), packaging containers (wrapping paper, bottles, etc. (See (B)), and can be used by being provided on a recording medium (see FIG. 14C) such as DVD software, CD, or video tape. Or provided for vehicles such as cars, motorcycles and bicycles (see FIG. 14D), personal items such as bags and glasses (see FIG. 14E), foods, clothing, daily necessities, electronic devices, etc. Can be used. Electronic devices refer to liquid crystal display devices, EL display devices, television devices (also simply referred to as televisions or television receivers), cellular phones, and the like.

  The semiconductor device 101 can be fixed to an article by being attached to the surface of the article or embedded in the article. For example, a book may be embedded in paper, and a package made of an organic resin may be embedded in the organic resin. Forgery can be prevented by providing the semiconductor device 101 for bills, coins, securities, bearer bonds, certificates, and the like. Further, by providing the semiconductor device 101 in packaging containers, recording media, personal items, foods, clothing, daily necessities, electronic devices, etc., it is possible to improve the efficiency of inspection systems and rental store systems. . In addition, forgery and theft can be prevented by providing the semiconductor device 101 in vehicles. Moreover, by embedding it in creatures such as animals, it is possible to easily identify individual creatures. For example, by burying a wireless tag in a living creature such as livestock, it is possible to easily identify the year of birth, sex, type, or the like.

  As described above, the semiconductor device 101 of the present invention can be provided and used for any article (including a living thing).

  The semiconductor device 101 has various advantages such as that it can transmit and receive data by wireless communication, can be processed into various shapes, and has a wide directivity and wide recognition range depending on the selected frequency. .

  Next, one mode of a system using the semiconductor device 101 is described with reference to FIG. A reader / writer 1302 is provided on the side surface of the portable terminal including the display portion 1301, and the semiconductor device 101 is provided on the side surface of the article 1303 (see FIG. 13A). When the reader / writer 1302 is held over the semiconductor device 101 included in the article 1303, information about the product such as the raw material and the place of origin of the article 1303, the inspection result for each production process, the history of the distribution process, and the description of the product is displayed on the display unit 1301. The As another system, the article 1305 can be inspected using the reader / writer 1304 and the semiconductor device 101 when the article 1305 is conveyed by a belt conveyor (see FIG. 13B). In this manner, by utilizing the semiconductor device 101 of the present invention for the system, information can be easily acquired, and a system that realizes high functionality and high added value can be provided.

  This embodiment can be freely combined with the above embodiment mode and Embodiments 1 to 5.

FIG. 11 illustrates a structure of a semiconductor device of the present invention. FIG. 11 illustrates a structure of a semiconductor device of the present invention. FIG. 6 shows a structure and characteristics of a conventional semiconductor device. FIG. 6 is a graph showing characteristics of the semiconductor device of the present invention and characteristics of a conventional semiconductor device. The figure which shows the structure of a reader / writer. FIG. 6 illustrates a structure of an antenna of a semiconductor device of the present invention. 10A and 10B illustrate a method for manufacturing and a method for using a semiconductor device of the present invention. 4A and 4B illustrate a method for manufacturing a semiconductor device of the present invention. FIG. 11 illustrates a structure of a semiconductor device of the present invention. FIG. 5 shows a structure other than the antenna of the semiconductor device of the present invention. FIG. 11 illustrates a structure of a semiconductor device of the present invention. FIG. 6 is a graph showing characteristics of the semiconductor device of the present invention and characteristics of a conventional semiconductor device. 1 is a diagram showing a system using a semiconductor device of the present invention. FIG. 13 shows a use of a semiconductor device of the present invention. FIG. 6 is a diagram showing a wiring method of a semiconductor device. FIG. 11 illustrates a structure of a semiconductor device of the present invention.

Explanation of symbols

100 resistor 101 semiconductor device 200 band filter 201 demodulation circuit 202 analysis circuit 203 memory 204 encoding circuit 205 modulation circuit 300 reader / writer 301 antenna 302 control terminal 303 wireless tag 304 antenna 305 signal processing circuit 306 band filter 307 power supply circuit 308 rectification Circuit 309 Holding Capacitor 310 First Terminal 311 Second Terminal 330 Modulated Carrier Wave 331 Second Terminal 311 Potential 332 First Terminal 310 Potential 340 Thickness 341 Carrier Movement Direction 351 Vertical Direction 352 Contact Hole 361 wiring 362 wiring 363 wiring 401 first signal 402 second signal 444 waveform 500 reader / writer 501 oscillation circuit 502 encoding circuit 503 modulation circuit 504 amplification circuit 505 antenna 506 band filter 507 Amplifier circuit 508 Demodulation circuit 509 Analysis circuit 510 Control terminal 600 Substrate 601 Element group 602 Terminal portion 603 Conductive particle 604 Resin 610 Substrate 660 Semiconductor layer 661 Base film 662 Semiconductor layer 662a Channel formation region 662b Impurity region 662c Low concentration impurity region 663 First insulating film 664 Gate electrode 665 Third insulating film 666 Wiring 667 Second insulating film 668 Fourth insulating film 701 Flexible substrate 720 Wireless tag 801 Protective layer 802 Antenna 803 Protective layer 804 Element group 805 Source and drain On the other hand, the other of the source and drain 807 Gate electrode 880 Substrate 881 Transistor 901 Resonant capacitance 902 Clock correction / counter circuit 903 Code extraction / code recognition / determination circuit 904 Memory controller 905 Mask RO
1000 circuit 1301 display unit 1302 reader / writer 1303 article 1304 reader / writer 1305 article 1501a corner 1501b corner 1501c corner 1502a corner 1502b corner 1502c corner 3060 band filter

Claims (11)

An antenna for transmitting and receiving modulated carriers;
A power supply circuit having a first terminal and a second terminal, and generating a DC voltage between the first terminal and the second terminal using the modulated carrier wave;
A circuit using the DC voltage as a power supply voltage;
A semiconductor device comprising a resistance element connected between the first terminal and the second terminal. An antenna for transmitting and receiving modulated carriers;
A power supply circuit having a first terminal and a second terminal, and generating a DC voltage between the first terminal and the second terminal using the modulated carrier wave;
A circuit using the DC voltage as a power supply voltage;
A resistance element connected between the first terminal and the second terminal;
The power supply circuit includes a rectifying circuit that rectifies the modulated carrier wave and converts the rectified carrier wave into a DC signal, and a holding capacitor that smoothes the DC signal output from the rectifying circuit, and is smoothed by the holding capacitor. A semiconductor device, wherein the signal is output as the DC voltage. An antenna for transmitting and receiving modulated carriers;
A power supply circuit having a first terminal and a second terminal, and generating a DC voltage between the first terminal and the second terminal using the modulated carrier wave;
A circuit using the DC voltage as a power supply voltage;
Possess a resistance element connected between said second terminal and said first terminal,
The circuit using the DC voltage as a power supply voltage has a thin film transistor,
The resistance element is formed using a semiconductor layer formed at the same time as a semiconductor layer that becomes an active layer of the thin film transistor, and the semiconductor element has an impurity element imparting conductivity type to the same extent as the channel formation region of the thin film transistor. A semiconductor device which is added to the semiconductor device. An antenna for transmitting and receiving modulated carriers;
A power supply circuit having a first terminal and a second terminal, and generating a DC voltage between the first terminal and the second terminal using the modulated carrier wave;
A circuit using the DC voltage as a power supply voltage;
A resistance element connected between the first terminal and the second terminal;
The circuit using the DC voltage as a power supply voltage has a thin film transistor,
The resistance element is formed using a semiconductor layer formed at the same time as a semiconductor layer that becomes an active layer of the thin film transistor, and the semiconductor element has an impurity element imparting conductivity type to the same extent as the channel formation region of the thin film transistor. Added to the
The power supply circuit includes a rectifying circuit that rectifies the modulated carrier wave and converts the rectified carrier wave into a DC signal, and a holding capacitor that smoothes the DC signal output from the rectifying circuit, and is smoothed by the holding capacitor. A semiconductor device, wherein the signal is output as the DC voltage. In any one of Claims 1 thru | or 4,
The antenna includes a pair of terminals, and one of the pair of terminals is electrically connected to a bandpass filter. In any one of Claims 1 thru | or 5 ,
The antenna has a pair of terminals, the other of the pair of terminals, said first terminal and electrically connected, and a semiconductor device characterized by being grounded. In any one of claims 1 to 6,
A circuit that uses the DC voltage as a power supply voltage operates based on a demodulation circuit that demodulates the modulated carrier wave, an analysis circuit that analyzes information demodulated by the demodulation circuit, and data that is analyzed by the analysis circuit A semiconductor device which is a memory. In any one of claims 1 to 6,
A circuit that uses the DC voltage as a power supply voltage operates based on a demodulation circuit that demodulates the modulated carrier wave, an analysis circuit that analyzes information demodulated by the demodulation circuit, and data that is analyzed by the analysis circuit A semiconductor device comprising: a memory; an encoding circuit that encodes data read from the memory; and a modulation circuit that modulates a carrier wave in accordance with information encoded by the encoding circuit. 9. The semiconductor device according to claim 7, wherein the memory is any one of a DRAM, an SRAM, an FeRAM, a mask ROM, an EPROM, an EEPROM, and a flash memory. In any one of claims 1 to 9,
The semiconductor device according to claim 1, wherein the resistance element has an electric resistance value of 500 kΩ or more and 2 MΩ or less. In any one of Claims 1 thru | or 10,
A semiconductor device, wherein the semiconductor layer forming the resistance element is made of a polycrystalline semiconductor.