JP4744161B2 - Photovoltaic element - Google Patents

Description

  The present invention relates to a photovoltaic device using a semiconductor junction.

  In recent years, photovoltaic devices having a pn junction between an n-type single crystal silicon substrate and a p-type amorphous silicon film have been developed. In such a photovoltaic device, in order to improve the photoelectric conversion efficiency, the fill factor F.V. is maintained while maintaining a high short circuit current Isc and an open circuit voltage Voc. F. It is necessary to improve.

  However, since there are many interface states at the junction between the n-type single crystal silicon substrate and the p-type amorphous silicon film, carrier recombination occurs and the open circuit voltage Voc decreases.

  Therefore, in order to suppress carrier recombination at the junction between the n-type single crystal silicon substrate and the p-type amorphous silicon film, a substantial gap between the n-type single crystal silicon substrate and the p-type amorphous silicon film. A photovoltaic device having a HIT (Heterojunction with Intrinsic Thin-Layer) structure in which an intrinsic amorphous silicon film (i-type amorphous silicon film) is inserted is proposed ( For example, Patent Document 1).

  In addition, in order to suppress the carrier recombination due to the surface level on the back surface side of the n-type single crystal silicon substrate and to prevent the minority carriers from moving to the back electrode, the i-type is formed on the back surface of the n-type single crystal silicon substrate. A photovoltaic device having a BSF (Back Surface Field) structure in which an amorphous silicon film and an n-type amorphous silicon film are formed is also known.

By the way, in the photovoltaic element as described above, a transparent electrode such as ITO is formed on the p-type amorphous silicon film as a light-receiving surface electrode. In general, the light-receiving surface electrode is formed by a sputtering method. At this time, the surface region of the p-type amorphous silicon film deteriorates due to damage during sputtering. Therefore, in order to reduce the influence of this deterioration, it is necessary to increase the thickness of the p-type amorphous silicon film.
JP 2001-345463 A

  However, when the thickness of the p-type amorphous silicon film is increased, the light absorption loss by the p-type amorphous silicon film increases. As a result, the output characteristics of the photovoltaic element are degraded.

  An object of the present invention is to provide a photovoltaic device with improved output characteristics.

  An intrinsic amorphous semiconductor film is an amorphous semiconductor film that is not intentionally doped with impurities, and contains impurities inherently contained in semiconductor raw materials or impurities that are naturally mixed in the manufacturing process. An amorphous semiconductor film is also included.

The photovoltaic device according to the present invention includes a substantially intrinsic first amorphous semiconductor film and an n-type second amorphous semiconductor film on a first surface of an n-type single crystal silicon substrate . A first semiconductor layer, a translucent first electrode layer, and a first collector electrode in order, and a substantially intrinsic third amorphous system is formed on the second surface of the single crystal silicon substrate . A semiconductor film, a p-type fourth amorphous semiconductor film, a second electrode layer, and a second collector electrode are provided in this order, and the first electrode layer side is the main light incident surface, and the first The first amorphous semiconductor film is an i-type amorphous silicon film having a thickness of 3.5 nm to 8 nm, and the second amorphous semiconductor film is an n-type non-crystalline film having a thickness of 2 nm to 8 nm. The third amorphous semiconductor film is an i-type amorphous silicon film having a thickness of 10 nm to 20 nm, and the fourth amorphous semiconductor film is 6 nm or less in thickness. It is those wherein the following p-type amorphous silicon film 80 nm.

In the photovoltaic device according to the present invention, when light enters, photocarriers are generated in the single crystal silicon substrate . Single crystal silicon substrate, the electric field by the first second surface of amorphous-based semiconductor film and the second surface side of the fourth amorphous-based semiconductor film of a single crystal silicon substrate is formed, a single crystal silicon Optical carriers generated in the substrate are taken out from the first electrode layer and the second electrode layer. Further, re-carriers according to the first surface of the first amorphous-based semiconductor film and the second surface of the third surface level of the single-crystal silicon substrate by an amorphous semiconductor film of a single crystal silicon substrate Bonding is prevented.

Here, the light-transmitting first electrode layer is formed on the first surface side of the single crystal silicon substrate , and the fourth amorphous semiconductor film is formed on the second surface side of the single crystal silicon substrate . ing. In this case, even if the thickness of the fourth amorphous semiconductor film is increased, the amount of light incident on the single crystal silicon substrate from the first electrode layer side is not reduced. Therefore, even if the thickness of the fourth amorphous semiconductor film is 6 nm or more, reduction in the amount of light received by the single crystal silicon substrate is prevented. Accordingly, it is possible to improve the carrier extraction efficiency while preventing a decrease in the generation efficiency of the optical carriers in the single crystal silicon substrate . Further, even when the surface of the fourth amorphous semiconductor film is deteriorated when the second electrode layer is formed, the fourth amorphous semiconductor film has a sufficient film thickness. Can be reduced.

In addition, since the thickness of the fourth amorphous semiconductor film is 80 nm or less, light absorption loss due to the fourth amorphous semiconductor film can be reduced. Thereby, the amount of light incident on the single crystal silicon substrate from the second electrode layer side and the amount of light incident on the single crystal silicon substrate after being incident on the second electrode layer after being incident from the first electrode layer side Can be prevented from decreasing.

  As a result, the output characteristics of the photovoltaic element are improved.

The thickness of the fourth amorphous semiconductor film is preferably 40 nm or less. In this case, the absorption loss of light by the fourth amorphous semiconductor film can be surely reduced. Thereby, the amount of light incident on the single crystal silicon substrate from the second electrode layer side and the amount of light incident on the single crystal silicon substrate after being incident on the second electrode layer after being incident from the first electrode layer side Can be reliably prevented. As a result, the output characteristics of the photovoltaic element are reliably improved.

Since the first electrode layer side is the main light incident surface, the light incident from the first electrode layer side passes through the second amorphous semiconductor film and the first amorphous semiconductor film, and the single crystal silicon substrate Is incident on. Therefore, even if the film thickness of the fourth amorphous semiconductor is 6 nm or more, the amount of light received by the crystalline semiconductor is surely prevented. This reliably improves the output characteristics of the photovoltaic element.

Since the second amorphous-based semiconductor film thickness is 8nm or less of the n-type amorphous silicon film or 2 nm, the second amorphous-based semiconductor film deterioration when forming the first electrode layer However, the influence can be reduced, and the light absorption loss by the second amorphous semiconductor film can be reduced. This further improves the output characteristics of the photovoltaic element.

  The thickness of the second amorphous semiconductor film is preferably 4 nm or more. In this case, the influence of the deterioration of the first electrode layer can be reliably prevented. This reliably improves the output characteristics of the photovoltaic element.

Since the first amorphous semiconductor film is an i-type amorphous silicon film having a film thickness of 3.5 nm or more and 8 nm or less, it is possible to prevent a short circuit current of the photovoltaic element from being reduced, and single crystal silicon Carrier recombination due to the surface level of the substrate can be reliably prevented. This further improves the output characteristics of the photovoltaic element.

Since the third amorphous semiconductor film is an i-type amorphous silicon film having a thickness of 10 nm to 20 nm, carrier recombination due to the surface level of the single crystal silicon substrate can be reliably prevented. Thus, it is possible to prevent a short circuit current of the photovoltaic element from being lowered.

According to the present invention, even if the thickness of the fourth amorphous semiconductor film is increased, the amount of light incident on the single crystal silicon substrate from the first electrode layer side is not reduced. Therefore, even if the thickness of the fourth amorphous semiconductor film is 6 nm or more, reduction in the amount of light received by the single crystal silicon substrate is prevented. Accordingly, it is possible to improve the carrier extraction efficiency while preventing a decrease in the generation efficiency of the optical carriers in the single crystal silicon substrate . Further, even when the surface of the fourth amorphous semiconductor film is deteriorated when the second electrode layer is formed, the fourth amorphous semiconductor film has a sufficient film thickness. Can be reduced.

In addition, since the thickness of the fourth amorphous semiconductor film is 80 nm or less, light absorption loss due to the fourth amorphous semiconductor film can be reduced. Thereby, the amount of light incident on the single crystal silicon substrate from the second electrode layer side and the amount of light incident on the single crystal silicon substrate after being incident on the second electrode layer after being incident from the first electrode layer side Can be prevented from decreasing.

Further, recombination of carriers due to the surface level of the single crystal silicon substrate by the first amorphous semiconductor film on the first surface side of the crystalline semiconductor and the third amorphous semiconductor film on the second surface side. Is prevented.

  As a result, the output characteristics of the photovoltaic element are improved.

  Embodiments of the present invention will be described below.

  1 and 2 are a top view and a bottom view of a photovoltaic device according to an embodiment of the present invention.

  As shown in FIG. 1, the photovoltaic element 100 includes an n-type single crystal substrate 1 having a substantially square shape. A surface electrode 12 is formed on the main surface (light-receiving surface) side of the n-type single crystal silicon substrate 11 via an amorphous silicon film described later. On the surface electrode 12, a plurality of striped bus bar electrode portions 13 are formed in parallel to each other, and a plurality of striped finger electrode portions 14 are formed in parallel to each other so as to be orthogonal to the bus bar electrode portions 13. The bus bar electrode portion 13 and the finger electrode portion 14 constitute a collector electrode 15. The width of the bus bar electrode portion 13 is, for example, 1.5 mm, the width of the finger electrode portion 14 is, for example, 100 μm, and the pitch of the finger electrode portions 14 is, for example, 2 mm.

  Further, as shown in FIG. 2, a back electrode 16 is formed on the back side of the n-type single crystal silicon substrate 11 via an amorphous silicon film described later. On the back electrode 16, a plurality of striped bus bar electrode portions 17 are formed in parallel with each other, and a plurality of striped finger electrode portions 18 are formed in parallel with each other so as to be orthogonal to the bus bar electrode portions 17. The bus bar electrode portion 17 and the finger electrode portion 18 constitute a collector electrode 19. The width of the bus bar electrode portion 17 is, for example, 3 mm, the width of the finger electrode portion 18 is, for example, 200 μm, and the pitch of the finger electrode portions 18 is, for example, 1 mm.

The front electrode 12 and the back electrode 16 are transparent electrodes made of, for example, ITO (indium tin oxide), SnO ₂ (tin oxide), ZnO (zinc oxide), and the collecting electrodes 15 and 19 are made of, for example, Ag ( And a conductive paste containing conductive particles such as silver. In the present embodiment, the surface electrode 12 side is the main light incident surface. When light is incident only from the front electrode 12 side, a non-transparent metal electrode may be used as the back electrode 16.

  FIG. 3 is a cross-sectional view of the photovoltaic element 100 of FIG.

  As shown in FIG. 3, an i-type amorphous silicon film 21 (non-doped amorphous silicon film) and an n-type amorphous silicon film 22 are sequentially formed on the main surface of an n-type single crystal silicon substrate 11. . Further, the surface electrode 12 is formed on the n-type amorphous silicon film 22, and the collecting electrode 15 is formed on the surface electrode 12. In FIG. 3, the bus bar electrode portion 14 (see FIG. 1) of the collector electrode 15 is not shown, and only the finger electrode portion 13 is shown.

  An i-type amorphous silicon film 23 and a p-type amorphous silicon film 24 are formed on the back surface of the n-type single crystal silicon substrate 11. Further, the back electrode 16 is formed on the p-type amorphous silicon film 24, and the collector electrode 19 is formed on the back electrode 16. In FIG. 3, the bus bar electrode portion 17 (see FIG. 2) of the collector electrode 19 is not shown, and only the finger electrode portion 18 is shown. In the photovoltaic element 100, the n-type single crystal silicon substrate 11 is a main power generation layer.

  Here, in the photovoltaic device 100 according to the present embodiment, the electrons generated in the n-type single crystal silicon substrate 11 are the n-type single crystal silicon substrate 11 and the highly doped n-type amorphous material. Collected by two regions of the silicon film 22. In this case, the electron collection efficiency by the n-type single crystal silicon substrate 11 and the n-type amorphous silicon film 22 is higher than the hole collection efficiency by the p-type amorphous silicon film 24. Therefore, even if the area of the collecting electrode 15 is made smaller than the collecting electrode 19, it is possible to prevent the electron collecting efficiency from decreasing with respect to the hole collecting efficiency. Thereby, as described above, the bus bar electrode part 13 and the finger electrode part 14 can be made thinner than the bus bar electrode part 17 and the finger electrode part 18, and the number of finger electrode parts 14 can be reduced. become. As a result, the amount of light shielded by the collector electrode 15 can be reduced, so that light can be efficiently incident on the n-type single crystal silicon substrate 11 through the surface electrode 12. Therefore, the generation efficiency of photocarriers in the n-type single crystal silicon substrate 11 can be improved by setting the surface electrode 12 side as a main light incident surface.

  Next, a method for manufacturing the photovoltaic element 100 will be described. First, the cleaned n-type single crystal silicon substrate 11 is heated at 200 ° C. or lower in a vacuum chamber. Thereby, moisture attached to the surface of n-type single crystal silicon substrate 11 is removed.

Next, SiH ₄ (silane) gas and H ₂ gas are introduced into the vacuum chamber, and the i-type amorphous silicon film 21 is formed on the main surface of the n-type single crystal silicon substrate 11 by plasma CVD (chemical vapor deposition). Form. Subsequently, SiH ₄ gas, H ₂ gas and PH ₃ (phosphine) gas are introduced into the vacuum chamber, and an n-type amorphous silicon film 22 is formed on the i-type amorphous silicon film 21 by plasma CVD. .

  Next, the n-type single crystal silicon substrate 11 on which the i-type amorphous silicon film 21 and the n-type amorphous silicon film 22 are formed is heated at 200 ° C. or lower in a vacuum chamber. Thereby, moisture attached to the surface of n-type single crystal silicon substrate 11 is removed.

Next, SiH ₄ gas and H ₂ gas are introduced into the vacuum chamber, and an i-type amorphous silicon film 23 is formed on the back surface of the n-type single crystal silicon substrate 11 by plasma CVD. Subsequently, SiH ₄ gas, H ₂ gas and B ₂ H ₆ (diborane) gas are introduced into the vacuum chamber, and the p-type amorphous silicon film 24 is formed on the i-type amorphous silicon film 23 by plasma CVD. Form.

  Subsequently, the front electrode 12 and the back electrode 16 made of ITO are formed on the n-type amorphous silicon film 22 and the p-type amorphous silicon film 24 by sputtering.

  Finally, the collector electrode 15 and the collector electrode 19 made of silver are formed on the front electrode 12 and the back electrode 16 by screen printing.

  Here, in the photovoltaic element 100 according to the present embodiment, the film thickness of the i-type amorphous silicon film 21 is preferably 8 nm or less. Thereby, the fall of the short circuit current of the photovoltaic element 100 can be prevented. The film thickness of the i-type amorphous silicon film 21 is preferably 3.5 nm or more. Thereby, carrier recombination due to the surface level of the n-type single crystal silicon substrate 11 can be prevented. Therefore, the film thickness of the i-type amorphous silicon film 21 is preferably 3.5 nm or more and 8 nm or less.

  The film thickness of the n-type amorphous silicon film 22 is preferably 8 nm or less. Thereby, the absorption loss of light by the n-type amorphous silicon film 22 can be reduced. The film thickness of the n-type amorphous silicon film 22 is preferably 2 nm or more. In this case, even when the surface of the n-type amorphous silicon film 22 is deteriorated when the surface electrode 12 is formed by the sputtering method, the n-type amorphous silicon film 22 has a sufficient film thickness. Can be reduced. The film thickness of the n-type amorphous silicon film 22 is more preferably 4 nm or more. Thereby, the influence of the deterioration of the surface of the n-type amorphous silicon film 22 can be surely reduced. Therefore, the film thickness of the n-type amorphous silicon film 22 is preferably 2 nm or more and 8 nm or less, and more preferably 4 nm or more and 8 nm or less.

  The i-type amorphous silicon film 23 preferably has a thickness of 10 nm or more. Thereby, carrier recombination due to the surface level of the n-type single crystal silicon substrate 11 can be prevented. The film thickness of the i-type amorphous silicon film 23 is preferably 20 nm or less. Thereby, the fall of the short circuit current of the photovoltaic element 100 can be prevented. Therefore, the film thickness of the i-type amorphous silicon film 23 is preferably 10 nm or more and 20 nm or less.

  The film thickness of the p-type amorphous silicon film 24 is preferably 6 nm or more. Here, in the photovoltaic element 100 according to the present embodiment, the surface electrode 12 side is the main light incident surface. In this case, even if the thickness of the p-type amorphous silicon film 24 is increased, the amount of light incident on the n-type single crystal silicon substrate 11 from the surface electrode 12 side is not reduced. Therefore, even when the thickness of the p-type amorphous silicon film 24 is 6 nm or more, the reduction in the amount of light received by the n-type single crystal silicon substrate 11 is prevented. Thereby, it is possible to improve the carrier extraction efficiency while preventing a decrease in the generation efficiency of the optical carriers in the n-type single crystal silicon substrate 11. Further, even when the surface of the p-type amorphous silicon film 24 is deteriorated when the back electrode 16 is formed by sputtering, the influence of the p-type amorphous silicon film 24 is reduced because the p-type amorphous silicon film 24 has a sufficient film thickness. be able to.

  The film thickness of the p-type amorphous silicon film 24 is more preferably 15 nm or more. In this case, the influence of deterioration of the surface of the p-type amorphous silicon film 24 can be reliably reduced.

  The film thickness of the p-type amorphous silicon film 24 is preferably 80 nm or less. In this case, light absorption loss due to the p-type amorphous silicon film 24 can be reduced. Thereby, the amount of light incident on the n-type single crystal silicon substrate 11 from the back electrode 16 side and the amount of light incident on the n-type single crystal silicon substrate 11 after being incident on the back electrode 16 after being incident from the front electrode 12 side. Can be prevented from decreasing.

  The film thickness of the p-type amorphous silicon film 24 is more preferably 40 nm or less. In this case, light absorption loss due to the p-type amorphous silicon film 24 can be reliably reduced. Thereby, the amount of light incident on the n-type single crystal silicon substrate 11 from the back electrode 16 side and the amount of light incident on the n-type single crystal silicon substrate 11 after being incident on the back electrode 16 after being incident from the front electrode 12 side. Can be reliably prevented. Therefore, the thickness of the p-type amorphous silicon film 24 is preferably 6 nm or more and 80 nm or less, and more preferably 15 nm or more and 40 nm or less.

  As a result, the output characteristics of the photovoltaic element 100 can be improved.

(Other embodiments)
In the above embodiment , the i-type amorphous silicon film 21, the n-type amorphous silicon film 22, and the p-type amorphous silicon film 24 may contain microcrystalline silicon.

(Correspondence between each component of claim and each part of embodiment)
In the above embodiment, the i- type amorphous silicon film 21 corresponds to the first amorphous semiconductor film, and the n-type amorphous silicon film 22 corresponds to the second amorphous semiconductor film. The surface electrode 12 corresponds to the first electrode layer, the i-type amorphous silicon film 23 corresponds to the third amorphous semiconductor film, and the p-type amorphous silicon film 24 corresponds to the fourth amorphous layer. The back electrode 16 corresponds to a second electrode layer.

  Hereinafter, the photovoltaic elements of Examples and Comparative Examples were produced, and the output characteristics of the produced photovoltaic elements were measured.

(Example)
In the example, the photovoltaic device 100 of FIG. 3 was produced by the method of the above embodiment. In the embodiment, the surface electrode 12 side is a light incident surface. Table 1 shows the conditions for producing the photovoltaic elements of the examples.

(Comparative example)
The photovoltaic element of the comparative example differs from the photovoltaic element 100 of the example in that the back electrode 16 side is the light incident surface.

(Evaluation)
Various photovoltaic elements of Examples and Comparative Examples having different film thicknesses of the amorphous silicon films were produced, and the maximum outputs Pmax of the photovoltaic elements were compared.

(1) Relationship between the thickness of the p-type amorphous silicon film and the maximum output Pmax Various photovoltaic devices of Examples and Comparative Examples having different thicknesses of the p-type amorphous silicon film 24 were produced, and the maximum The output Pmax was measured. FIG. 4 shows the measurement results. In FIG. 4, the horizontal axis indicates the film thickness of the p-type amorphous silicon film 24, the vertical axis indicates the maximum output Pmax, the alternate long and short dash line indicates the measurement result of the example, and the solid line indicates the measurement result of the comparative example. Show. In addition, the value of the maximum output Pmax is a value normalized by setting the maximum value of the maximum output Pmax of the photovoltaic element of the comparative example to 1. In the embodiment, the film thickness of the i-type amorphous silicon film 21 is 5 nm, the film thickness of the n-type amorphous silicon film 22 is 5 nm, and the film thickness of the i-type amorphous silicon film 23. In the comparative example, the film thickness of the i-type amorphous silicon film 21 is 15 nm, the film thickness of the n-type amorphous silicon film 22 is 14 nm, and the i-type amorphous silicon film 23 The film thickness is 8 nm.

  As shown in FIG. 4, in the photovoltaic device of the example, when the thickness of the p-type amorphous silicon film 24 is 6 to 80 nm, the value of the maximum output Pmax is the maximum output Pmax of the comparative example. The maximum value is exceeded.

  Here, in the photovoltaic element of the comparative example, the p-type amorphous silicon film 24 is formed on the light receiving surface side. In this case, if the thickness of the p-type amorphous silicon film 24 is increased, the light absorption loss by the p-type amorphous silicon film increases, and the amount of light incident on the n-type single crystal silicon substrate 11 is reduced. . Thereby, the generation efficiency of the optical carrier in the n-type single crystal silicon substrate 11 is lowered.

  If the thickness of the p-type amorphous silicon film 24 is reduced, the influence of the surface portion of the p-type amorphous silicon film 24 that has deteriorated during the formation of the back electrode 16 cannot be reduced, and the light extraction efficiency decreases. .

  On the other hand, in the photovoltaic element of the example, the p-type amorphous silicon film 24 is formed on the back side of the single crystal silicon substrate 11. That is, the p-type amorphous silicon film 24 is formed on the side opposite to the light receiving surface. In this case, even if the thickness of the p-type amorphous silicon film 24 is increased to 6 nm or more, the amount of light incident on the n-type single crystal silicon substrate 11 from the light receiving surface side is not reduced. Therefore, the thickness of the p-type amorphous silicon film 24 can be increased while preventing a reduction in the amount of light received by the n-type single crystal silicon substrate 11. Therefore, by increasing the film thickness of the p-type amorphous silicon film 24, it is possible to improve the carrier extraction efficiency while preventing the generation efficiency of the optical carriers in the n-type single crystal silicon substrate 11 from being reduced.

  Further, by increasing the film thickness of the p-type amorphous silicon film 24, even if the surface of the p-type amorphous silicon film is deteriorated when the back electrode 16 is formed, the influence can be reduced.

  Further, when the thickness of the p-type amorphous silicon film 24 is 80 nm or less, light absorption loss due to the amorphous silicon film 24 can be reduced. Thereby, after passing through the n-type single crystal silicon substrate 11, it is possible to prevent the amount of light incident on the n-type single crystal silicon substrate 11 from being reduced by being reflected by the back electrode 16.

  As a result, it is considered that the maximum output Pmax of the example was improved.

  In addition, the value of the maximum output Pmax in the comparative example changes sharply depending on the change in the film thickness of the p-type amorphous silicon film 24, but the value of the maximum output Pmax in the embodiment is not p-type non- When the film thickness of the crystalline silicon film 24 is in the range of 6 nm or more, it changes gradually. That is, in the photovoltaic device of the example, a high maximum output Pmax can be obtained in a wide range of the film thickness of the p-type amorphous silicon film 24. Therefore, the system required for film thickness control is relaxed.

(2) Relationship between the film thickness of the n-type amorphous silicon film and the maximum output Pmax Various photovoltaic devices of Examples and Comparative Examples having different film thicknesses of the n-type amorphous silicon film 22 were produced, and the maximum The output Pmax was measured. FIG. 5 shows the measurement results. In FIG. 5, the horizontal axis indicates the film thickness of the n-type amorphous silicon film 22, the vertical axis indicates the maximum output Pmax, the alternate long and short dash line indicates the measurement result of the example, and the solid line indicates the measurement result of the comparative example. Show. In addition, the value of the maximum output Pmax is a value normalized by setting the maximum value of the maximum output Pmax of the photovoltaic element of the comparative example to 1. In the embodiment, the i-type amorphous silicon film 21 has a thickness of 5 nm, the i-type amorphous silicon film 23 has a thickness of 15 nm, and the p-type amorphous silicon film 24 has a thickness of 20 nm. In the comparative example, the i-type amorphous silicon film 21 has a thickness of 15 nm, the i-type amorphous silicon film 23 has a thickness of 8 nm, and the p-type amorphous silicon film 24 has a thickness of 5 nm.

  As shown in FIG. 5, in the photovoltaic device of the example, when the film thickness of the n-type amorphous silicon film 22 is 4 to 8 nm, the value of the maximum output Pmax is the maximum output Pmax of the comparative example. The maximum value is exceeded. That is, in the photovoltaic device of the example, a high maximum output Pmax can be obtained by controlling the film thickness of the n-type amorphous silicon film 22 in the range of 4 to 8 nm.

  Here, in the photovoltaic element of the embodiment, the n-type amorphous silicon film 22 is formed on the light receiving surface side. In this case, by setting the film thickness of the n-type amorphous silicon film 22 to 4 nm or more and 8 nm or less, the influence of the surface portion of the n-type amorphous silicon film 22 deteriorated during the formation of the surface electrode 12 is reduced, It is considered that the light absorption loss by the n-type amorphous silicon film 22 can be sufficiently reduced. Therefore, it is considered that the maximum output Pmax of the example is improved.

(3) Relationship between the film thickness of the i-type amorphous silicon film on the light incident surface side and the maximum output Pmax Photovoltaic element and i-type amorphous film of the embodiments in which the film thickness of the i-type amorphous silicon film 21 is different Various photovoltaic elements of comparative examples having different thicknesses of the silicon film 23 were produced, and their maximum output Pmax was measured. FIG. 6 shows the measurement results. In FIG. 6, the horizontal axis represents the film thickness of the i-type amorphous silicon film 21 of the example or the i-type amorphous silicon film 23 of the comparative example, that is, the film thickness of the i-type amorphous silicon film on the light incident surface side. The vertical axis indicates the maximum output Pmax, the alternate long and short dash line indicates the measurement result of the example, and the solid line indicates the measurement result of the comparative example. In addition, the value of the maximum output Pmax is a value normalized by setting the maximum value of the maximum output Pmax of the photovoltaic element of the comparative example to 1. In the embodiment, the film thickness of the n-type amorphous silicon film 22 is 5 nm, the film thickness of the i-type amorphous silicon film 23 is 15 nm, and the film thickness of the p-type amorphous silicon film 24. Is 20 nm. In the comparative example, the i-type amorphous silicon film 21 has a thickness of 15 nm, the n-type amorphous silicon film 22 has a thickness of 14 nm, and the p-type amorphous silicon film 24 has a thickness. Is 15 nm.

  As shown in FIG. 6, in the photovoltaic device of the example, when the film thickness of the i-type amorphous silicon film 21 is about 3.5 to 8 nm, the value of the maximum output Pmax is the maximum of the comparative example. The maximum value of the output Pmax is exceeded. That is, in the photovoltaic device of the example, a high maximum output Pmax can be obtained by controlling the film thickness of the i-type amorphous silicon film 21 in the range of 3.5 to 8 nm.

(4) Relationship between the film thickness of the i-type amorphous silicon film on the back side and the maximum output Pmax Examples in which the film thickness of the i-type amorphous silicon film 23 is different and the film thickness of the i-type amorphous silicon film 21 are Various photovoltaic devices of different comparative examples were produced, and their maximum output Pmax was measured. FIG. 7 shows the measurement results. In FIG. 7, the horizontal axis shows the film thickness of the i-type amorphous silicon film 23 of the example or the i-type amorphous silicon film 21 of the comparative example, that is, the film thickness of the i-type amorphous silicon film on the back surface side. The vertical axis indicates the maximum output Pmax, the alternate long and short dash line indicates the measurement result of the example, and the solid line indicates the measurement result of the comparative example. In addition, the value of the maximum output Pmax is a value normalized by setting the maximum value of the maximum output Pmax of the photovoltaic element of the comparative example to 1. In the embodiment, the i-type amorphous silicon film 21 has a thickness of 5 nm, the n-type amorphous silicon film 22 has a thickness of 5 nm, and the p-type amorphous silicon film 24 has a thickness. Is 20 nm. In the comparative example, the n-type amorphous silicon film 22 has a film thickness of 14 nm, the i-type amorphous silicon film 23 has a film thickness of 8 nm, and the p-type amorphous silicon film 24 has a film thickness. Is 5 nm.

  As shown in FIG. 7, in the photovoltaic element of the example, when the film thickness of the i-type amorphous silicon film 23 is about 10 to 20 nm, the value of the maximum output Pmax is the maximum output Pmax of the comparative example. The maximum value of is exceeded. That is, in the photovoltaic device of the example, a high maximum output Pmax can be obtained by controlling the film thickness of the i-type amorphous silicon film 23 in the range of 10 to 20 nm.

  The photovoltaic element according to the present invention can be used for various power sources and the like.

It is a top view of the photovoltaic device concerning a 1st embodiment of the present invention. It is a bottom view of the photovoltaic device concerning a 1st embodiment of the present invention. It is the sectional view on the AA line of the photovoltaic element of FIG. It is a figure which shows the relationship between the film thickness of a p-type amorphous silicon film, and the maximum output Pmax. It is a figure which shows the relationship between the film thickness of an n-type amorphous silicon film, and the maximum output Pmax. It is a figure which shows the relationship between the film thickness of the i-type amorphous silicon film by the side of a light-incidence surface, and maximum output Pmax. It is a figure which shows the relationship between the film thickness of the i-type amorphous silicon film on the back side, and the maximum output Pmax.

Explanation of symbols

11 n-type single crystal silicon substrate 12 surface electrode 13, 17 bus bar electrode portion 14, 18 finger electrode portion 15, 19 collector electrode 16 back electrode 21, 23 i-type amorphous silicon film 22 n-type amorphous silicon film 24 p Type amorphous silicon film 100 photovoltaic device

Claims (3)

On the first surface of the n-type single crystal silicon substrate,
A substantially intrinsic first amorphous semiconductor film;
an n-type second amorphous semiconductor film;
A translucent first electrode layer;
A first collector electrode in order,
On the second surface of the single crystal silicon substrate,
A substantially intrinsic third amorphous semiconductor film;
a p-type fourth amorphous semiconductor film;
A translucent second electrode layer;
A second collector electrode in order,
The first collector electrode is smaller in area than the second collector electrode , and the first amorphous semiconductor film is an i-type amorphous silicon film having a thickness of 3.5 nm to 8 nm;
The second amorphous semiconductor film is an n-type amorphous silicon film having a thickness of 2 nm to 8 nm,
The third amorphous semiconductor film is an i-type amorphous silicon film having a thickness of 10 nm to 20 nm,
The photovoltaic element according to claim 4, wherein the fourth amorphous semiconductor film is a p-type amorphous silicon film having a thickness of 6 nm to 80 nm.   2. The photovoltaic element according to claim 1, wherein the thickness of the second amorphous semiconductor film is 4 nm or more.   2. The photovoltaic element according to claim 1, wherein the thickness of the fourth amorphous semiconductor film is 40 nm or less.

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