JP4711617B2 - Organic electroluminescence device - Google Patents
Organic electroluminescence device Download PDFInfo
- Publication number
- JP4711617B2 JP4711617B2 JP2003405549A JP2003405549A JP4711617B2 JP 4711617 B2 JP4711617 B2 JP 4711617B2 JP 2003405549 A JP2003405549 A JP 2003405549A JP 2003405549 A JP2003405549 A JP 2003405549A JP 4711617 B2 JP4711617 B2 JP 4711617B2
- Authority
- JP
- Japan
- Prior art keywords
- group
- organic
- ring
- carbon atoms
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 238000005401 electroluminescence Methods 0.000 title claims description 3
- 239000010410 layer Substances 0.000 claims description 86
- 239000000463 material Substances 0.000 claims description 73
- 150000001875 compounds Chemical group 0.000 claims description 42
- 125000003118 aryl group Chemical group 0.000 claims description 33
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical group C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 18
- 238000000576 coating method Methods 0.000 claims description 15
- 125000003373 pyrazinyl group Chemical group 0.000 claims description 12
- 239000003446 ligand Substances 0.000 claims description 11
- 239000012044 organic layer Substances 0.000 claims description 11
- 125000000714 pyrimidinyl group Chemical group 0.000 claims description 9
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 7
- -1 n-octyl Chemical group 0.000 description 74
- 125000004432 carbon atom Chemical group C* 0.000 description 65
- 238000000034 method Methods 0.000 description 40
- 125000001424 substituent group Chemical group 0.000 description 36
- 230000000052 comparative effect Effects 0.000 description 26
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 25
- 229910052751 metal Inorganic materials 0.000 description 25
- 239000002184 metal Substances 0.000 description 25
- 125000000623 heterocyclic group Chemical group 0.000 description 24
- 125000000217 alkyl group Chemical group 0.000 description 16
- 150000004696 coordination complex Chemical class 0.000 description 14
- 238000002347 injection Methods 0.000 description 13
- 239000007924 injection Substances 0.000 description 13
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- 239000010408 film Substances 0.000 description 11
- 229910021645 metal ion Inorganic materials 0.000 description 11
- 229910052757 nitrogen Inorganic materials 0.000 description 11
- 125000004433 nitrogen atom Chemical group N* 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical group C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 8
- 125000006615 aromatic heterocyclic group Chemical group 0.000 description 8
- 230000005525 hole transport Effects 0.000 description 8
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- 239000011701 zinc Substances 0.000 description 8
- 239000010949 copper Substances 0.000 description 7
- 125000004430 oxygen atom Chemical group O* 0.000 description 7
- 229910052717 sulfur Inorganic materials 0.000 description 7
- 125000004434 sulfur atom Chemical group 0.000 description 7
- 238000007740 vapor deposition Methods 0.000 description 7
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 6
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 6
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- 125000001153 fluoro group Chemical group F* 0.000 description 5
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- 239000011241 protective layer Substances 0.000 description 4
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- 125000001425 triazolyl group Chemical group 0.000 description 4
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- 229910052744 lithium Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 125000001624 naphthyl group Chemical group 0.000 description 3
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical compound C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 3
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- PBMFSQRYOILNGV-UHFFFAOYSA-N pyridazine Chemical group C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 description 3
- 125000000168 pyrrolyl group Chemical group 0.000 description 3
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- 150000003852 triazoles Chemical class 0.000 description 3
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- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 2
- 125000004974 2-butenyl group Chemical group C(C=CC)* 0.000 description 2
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 2
- 125000001494 2-propynyl group Chemical group [H]C#CC([H])([H])* 0.000 description 2
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 description 2
- 125000000590 4-methylphenyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1*)C([H])([H])[H] 0.000 description 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
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- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
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Description
本発明は、高輝度で発光効率が高く、耐久性に優れる有機電界発光素子(有機EL素子)に関する。 The present invention relates to an organic electroluminescent element (organic EL element) having high luminance, high luminous efficiency, and excellent durability.
有機EL素子は、発光層もしくは発光層を含む複数の有機層を挟んだ対向電極から構成されている。有機EL素子は、陰極から注入された電子と陽極から注入された正孔とが発光層において再結合し生成した励起子からの発光、又は前記励起子からエネルギー移動して生成した他の分子の励起子からの発光のいずれかを利用して、発光を得るための素子である。 The organic EL element is composed of a light-emitting layer or a counter electrode sandwiching a plurality of organic layers including a light-emitting layer. The organic EL element has a light emission from excitons generated by recombination of electrons injected from the cathode and holes injected from the anode in the light emitting layer, or other molecules generated by energy transfer from the excitons. It is an element for obtaining light emission using any one of light emitted from excitons.
金属錯体をホスト材料として用いたりん光発光性有機EL素子に関する発明が開示されたが(特許文献1参照)、その発光効率、耐久性はいまだ充分ではなく、さらなる高い発光輝度、発光効率を示し、かつ耐久性に優れた素子の開発が切望されているのが現状である。
従って、本発明は、高い発光輝度、発光効率を示し、かつ耐久性にも優れた発光素子を提供することを目的とする。 Accordingly, an object of the present invention is to provide a light-emitting element that exhibits high light emission luminance and light emission efficiency and is excellent in durability.
前記課題は下記により達成された。
〔1〕
一対の電極間に、発光層を含む少なくとも一層の有機層を有する有機電界発光素子であって、発光層は、りん光発光材料としてオルトメタル化錯体と、下記一般式(II)で表される化合物とを各々少なくとも一種含有する有機電界発光素子。
〔2〕
一般式(II)で表される化合物は、発光層中における含有率が50%〜99.9質量%である〔1〕に記載の有機電界発光素子。
〔3〕
前記有機電界発光素子における有機層が塗布法により形成されたことを特徴とする〔1〕又は〔2〕に記載の有機電界発光素子。
なお、本発明は特許請求の範囲に記載された構成を有するが、以下、その他についても
参考のため記載した。
The object has been achieved by the following.
[1]
An organic electroluminescent device having at least one organic layer including a light emitting layer between a pair of electrodes, wherein the light emitting layer is represented by an orthometalated complex as a phosphorescent material and the following general formula (II) An organic electroluminescent device containing at least one compound.
[2]
The compound represented by the general formula (II) is the organic electroluminescence device according to [1], in which the content in the light emitting layer is 50% to 99.9% by mass .
[3 ]
The organic electroluminescent element according to [1] or [2], wherein the organic layer in the organic electroluminescent element is formed by a coating method.
In addition, although this invention has the structure described in the claim, the following was also described for reference.
本発明によれば、本発明の特定の構造を有する金属錯体を発光層にホスト材料として用いると、高い発光輝度、高い外部量子効率を示し、かつ耐久性に優れた発光素子を提供できる。また本発明の金属錯体は塗布プロセスに供することができるため、発光層の製造方法が簡便で、蒸着法と比較して製造に要するエネルギーを省くことができ、かつ工数が少なくなるなどの利点を有する。 According to the present invention, when a metal complex having a specific structure of the present invention is used as a host material in a light-emitting layer, a light-emitting element that exhibits high emission luminance, high external quantum efficiency, and excellent durability can be provided. In addition, since the metal complex of the present invention can be subjected to a coating process, the production method of the light emitting layer is simple, the energy required for production can be omitted compared with the vapor deposition method, and the man-hours are reduced. Have.
本発明の有機EL素子について詳細に説明する。本発明の有機EL素子は、一対の電極間に、発光層を含む少なくとも一層の有機層を有する有機電界発光素子であって、発光層は、りん光発光材料(りん光材料)と、一般式(I)又は一般式(V)で表される化合物とを各々少なくとも一種含有する有機EL素子である。また、上記一対の電極間には発光層の他に、正孔注入層、正孔輸送層、電子輸送層、電子注入層、保護層等が配置されていてもよく、またこれらの各層はそれぞれ他の機能を兼備したものであっても良い。 The organic EL device of the present invention will be described in detail. The organic EL device of the present invention is an organic electroluminescent device having at least one organic layer including a light emitting layer between a pair of electrodes, and the light emitting layer includes a phosphorescent material (phosphorescent material) and a general formula. This is an organic EL device containing at least one compound represented by (I) or the general formula (V). In addition to the light emitting layer, a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a protective layer, and the like may be disposed between the pair of electrodes. It may have other functions.
本発明の有機EL素子では、一般式(I)又は一般式(V)で表される化合物はホスト材料として機能することが好ましい。前記ホスト材料は、発光層を形成する材料のうち、発光材料(本発明ではりん光材料)以外の材料であり、以下の各種の機能(上記各種機能):
発光材料(本発明ではりん光材料)を分散して層中に保持する機能、
陽極や正孔輸送層等から正孔を受け取る機能、
陰極や電子輸送層等から電子を受け取る機能、
正孔及び/又は電子を輸送する機能、
正孔と電子の再結合の場を提供する機能、
再結合により生成した励起子のエネルギーを発光材料に移動させる機能、及び
正孔及び/又は電子を発光材料に輸送する機能のうち少なくとも一種の機能、
を有する材料を意味する。
In the organic EL device of the present invention, the compound represented by formula (I) or formula (V) preferably functions as a host material. The host material is a material other than the light emitting material (phosphorescent material in the present invention) among the materials forming the light emitting layer, and has the following various functions (the above various functions):
A function of dispersing and holding the light emitting material (phosphorescent material in the present invention) in the layer;
The function of receiving holes from the anode and hole transport layer,
The ability to receive electrons from the cathode, electron transport layer, etc.
The function of transporting holes and / or electrons,
The ability to provide a field for recombination of holes and electrons,
At least one of a function of transferring the energy of excitons generated by recombination to the light emitting material and a function of transporting holes and / or electrons to the light emitting material;
Means a material having
上記各種機能のうち、正孔及び/又は電子を輸送する機能、及び再結合により生成した励起子のエネルギーを発光材料に移動させる機能の少なくとも一つの機能を有する材料であることが好ましく、少なくとも二つの機能を有する材料であることがより好ましい。さらに一般式(I)乃至(V)で表される化合物は、正孔及び/又は電子を輸送する機能、及び再結合により生成した励起子のエネルギーを発光材料に移動させる機能以外の上記各種機能を兼ね備えてもよい。 Among the various functions described above, the material is preferably a material having at least one function of transporting holes and / or electrons and transferring exciton energy generated by recombination to the light emitting material. More preferably, the material has one function. Further, the compounds represented by the general formulas (I) to (V) have various functions other than the function of transporting holes and / or electrons and the function of transferring the energy of excitons generated by recombination to the light emitting material. May be combined.
一般式(I)乃至(V)で表される化合物は、発光層中において、主成分であることが好ましく、ホスト材料として機能するために主成分であることがより好ましい。より具体的には発光層中における一般式(I)乃至(V)で表される化合物の含有率は、50%〜99.9質量%であることが好ましく、60%〜99質量%であることがより好ましい。 The compound represented by the general formulas (I) to (V) is preferably a main component in the light emitting layer, and more preferably a main component in order to function as a host material. More specifically, the content of the compound represented by the general formulas (I) to (V) in the light emitting layer is preferably 50% to 99.9% by mass, and 60% to 99% by mass. It is more preferable.
前記ホスト材料は、上記の機能を果たす際に電気化学的に酸化もしくは還元されうるため、電気化学的酸化及び還元に対して非常に安定であるものが好ましい。言い換えれば、酸化種(例えばラジカルカチオン種)及び還元種(例えばラジカルアニオン種)が非常に安定であるものが好ましい。また、ホスト材料で再結合が行われる場合には、まずホスト材料の励起子が生成することから、ホスト材料の励起状態は分解や熱失活を引き起こさず安定であることが好ましい。このことはすなわち、光に対しても安定なホスト材料が好ましいことをも意味するものである。さらに、有機EL素子では駆動時の発熱による膜の破壊や材料の分解が劣化の大きな要因であることから、ホスト材料もまた熱による分解がなく、高温まで安定なアモルファス膜を保持できる材料であることが好ましい。 The host material is preferably highly stable against electrochemical oxidation and reduction because it can be electrochemically oxidized or reduced when performing the above functions. In other words, those in which the oxidizing species (eg radical cation species) and reducing species (eg radical anion species) are very stable are preferred. In addition, when recombination is performed in the host material, first, excitons of the host material are generated. Therefore, the excited state of the host material is preferably stable without causing decomposition or thermal deactivation. This also means that a host material that is stable to light is preferable. In addition, in organic EL elements, the destruction of the film due to heat generation during driving and the decomposition of the material are major factors of deterioration, so the host material is also a material that is not decomposed by heat and can hold an amorphous film that is stable to high temperatures. It is preferable.
以上のように前記ホスト材料は、光、熱、電気化学的酸化還元に対して極めて安定であるものが好ましく、これらを満足するホスト材料を用いた場合、発光素子の耐久性は極めて向上することが期待できる。 As described above, the host material is preferably extremely stable with respect to light, heat, and electrochemical oxidation-reduction, and when a host material that satisfies these is used, the durability of the light-emitting element is greatly improved. Can be expected.
発光素子の耐久性を考慮した場合、本発明における一般式(I)乃至(V)の化合物のガラス転移温度(Tg)は、130℃以上400℃以下であることが好ましく、より好ましくは135℃以上400℃以下であり、さらに好ましくは140℃以上400℃以下であり、特に好ましくは150℃以上400℃以下であり、最も好ましくは160℃以上400℃以下である。ここで、Tgは、示差走査熱量測定(DSC)、示差熱分析(DTA)等の熱測定や、X線回折(XRD)、偏光顕微鏡観察等により確認することができる。 In consideration of the durability of the light emitting device, the glass transition temperature (Tg) of the compounds of the general formulas (I) to (V) in the present invention is preferably 130 ° C. or higher and 400 ° C. or lower, more preferably 135 ° C. The temperature is 400 ° C. or lower, more preferably 140 ° C. or higher and 400 ° C. or lower, particularly preferably 150 ° C. or higher and 400 ° C. or lower, and most preferably 160 ° C. or higher and 400 ° C. or lower. Here, Tg can be confirmed by thermal measurement such as differential scanning calorimetry (DSC) and differential thermal analysis (DTA), X-ray diffraction (XRD), observation with a polarizing microscope, and the like.
本発明における一般式(I)乃至(V)の化合物は、金属錯体(本発明の金属錯体と同義である)であり、ホスト材料であることが好ましい。前記金属錯体の金属種は特に限定されないが、第2〜第4周期の金属が好ましく、より好ましくはLi、Be、Na、Mg、Al、K、Ca、Sc、Ti、V、Cr、Mn、Fe、Co、Ni、Cu、Zn、Ga、Geであり、より好ましくは、Li、Be、Na、Mg、Al、Ti、Fe、Co、Ni、Cu、Zn、Gaであり、さらに好ましくはBe、Mg、Al,Fe、Ni、Cu,Znであり、さらに好ましくはBe、Mg、Al、Cu、Znであり、特に好ましくはAl、Znである。 The compounds of the general formulas (I) to (V) in the present invention are metal complexes (synonymous with the metal complexes of the present invention), and are preferably host materials. The metal species of the metal complex is not particularly limited, but is preferably a metal in the second to fourth periods, more preferably Li, Be, Na, Mg, Al, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, more preferably Li, Be, Na, Mg, Al, Ti, Fe, Co, Ni, Cu, Zn, Ga, and more preferably Be. Mg, Al, Fe, Ni, Cu, and Zn, more preferably Be, Mg, Al, Cu, and Zn, and particularly preferably Al and Zn.
本発明の金属錯体は、同一分子中に複数の金属イオンを有するいわゆる複核錯体であっても良い。また、複数種の金属からなる複核錯体であっても良い。また、複数種の配位子を有していても良い。本発明の金属錯体は、中性の金属錯体であることが好ましい。 The metal complex of the present invention may be a so-called binuclear complex having a plurality of metal ions in the same molecule. Moreover, the binuclear complex which consists of multiple types of metals may be sufficient. Moreover, you may have multiple types of ligand. The metal complex of the present invention is preferably a neutral metal complex.
本発明の有機EL素子の好ましい第一の形態は、発光層に一般式(I)で表される化合物を含有する形態であり、好ましくはホスト材料として機能することが好ましい。一般式(I)中、X11は窒素原子又はC−R11を表す。X12は窒素原子又はC−R12を表す。R11、R12はアリール基もしくは連結してヘテロ環を形成する基を表す。X13は酸素原子、硫黄原子、−C(R13)R14−又は−NR15−を表す。R13、R14、R15は水素原子又は置換基を表す。Z1は5員環又は6員環の形成に必要な原子群を表す。M1は金属イオンを表す。n1は1以上の整数を表す。L1は配位子を表し、m1は0以上の整数を表す。 A preferred first form of the organic EL device of the present invention is a form containing a compound represented by formula (I) in the light emitting layer, and preferably functions as a host material. In the general formula (I), X 11 represents a nitrogen atom or C—R 11 . X 12 represents a nitrogen atom or C—R 12 . R 11 and R 12 represent an aryl group or a group that is linked to form a heterocycle. X 13 represents an oxygen atom, a sulfur atom, —C (R 13 ) R 14 — or —NR 15 —. R 13 , R 14 and R 15 each represents a hydrogen atom or a substituent. Z 1 represents an atomic group necessary for forming a 5-membered ring or a 6-membered ring. M 1 represents a metal ion. n 1 represents an integer of 1 or more. L 1 represents a ligand, and m 1 represents an integer of 0 or more.
一般式(I)で表される化合物について詳細に説明する。X11は窒素原子又はC−R11を表し、X12は窒素原子又はC−R12を表す。R11、R12はアリール基、又はR11とR12とが連結してヘテロ環を形成するのに必要な原子群を表す。 The compound represented by formula (I) will be described in detail. X 11 represents a nitrogen atom or C—R 11 , and X 12 represents a nitrogen atom or C—R 12 . R 11 and R 12 each represents an aryl group or an atomic group necessary for connecting R 11 and R 12 to form a heterocycle.
R11、R12がアリール基を表す場合、アリール基としては、フェニル基、ナフチル基、ピリジル基、ピリミジニル基、ピリダジニル基、ピラジニル基、チエニル基、フリル基、ピロリル基等が挙げられ、好ましくはフェニル基、ピリジル基であり、より好ましくはフェニル基である。 When R 11 and R 12 represent an aryl group, examples of the aryl group include a phenyl group, a naphthyl group, a pyridyl group, a pyrimidinyl group, a pyridazinyl group, a pyrazinyl group, a thienyl group, a furyl group, and a pyrrolyl group. A phenyl group and a pyridyl group, more preferably a phenyl group.
R11とR12が連結してヘテロ環を形成する場合、形成されるヘテロ環としては、ピリジン環、ピラジン環、ピリミジン環、ピリダジン環、トリアジン環、チオフェン環、フラン環、ピロール環、イミダゾール環、オキサゾール環、チアゾール環、トリアゾール環等が挙げられ、好ましくはピリジン環、ピラジン環、ピリミジン環であり、より好ましくはピリジン環、ピラジン環であり、さらに好ましくはピリジン環である。R11とR12が連結してヘテロ環を形成する場合、該ヘテロ環は他の環と縮合環を形成していても良い。 When R 11 and R 12 are linked to form a heterocyclic ring, the formed heterocyclic ring includes pyridine ring, pyrazine ring, pyrimidine ring, pyridazine ring, triazine ring, thiophene ring, furan ring, pyrrole ring, imidazole ring. , An oxazole ring, a thiazole ring, a triazole ring, and the like, preferably a pyridine ring, a pyrazine ring, and a pyrimidine ring, more preferably a pyridine ring and a pyrazine ring, and still more preferably a pyridine ring. When R 11 and R 12 are linked to form a heterocycle, the heterocycle may form a condensed ring with another ring.
R11、R12で表されるアリール基、R11とR12が連結して形成されるヘテロ環の各々はさらに置換基を有してもよく、置換基群Aが挙げられる。 The aryl group represented by R 11, R 12, each of the heterocycle and R 11 and R 12 is formed by connecting may further have a substituent group, include substituent group A.
(置換基群A)
アルキル基(好ましくは炭素数1〜20、より好ましくは炭素数1〜12、特に好ましくは炭素数1〜8であり、例えばメチル、エチル、iso−プロピル、tert−ブチル、n−オクチル、n−デシル、n−ヘキサデシル、シクロプロピル、シクロペンチル、シクロヘキシル等が挙げられる。)、アルケニル基(好ましくは炭素数2〜20、より好ましくは炭素数2〜12、特に好ましくは炭素数2〜8であり、例えばビニル、アリル、2−ブテニル、3−ペンテニル等が挙げられる。)、アルキニル基(好ましくは炭素数2〜20、より好ましくは炭素数2〜12、特に好ましくは炭素数2〜8であり、例えばプロパルギル、3−ペンチニル等が挙げられる。)、アリール基(好ましくは炭素数6〜30、より好ましくは炭素数6〜20、特に好ましくは炭素数6〜12であり、例えばフェニル、p−メチルフェニル、ナフチル等が挙げられる。)、置換カルボニル基(好ましくは炭素数1〜20、より好ましくは炭素数1〜16、特に好ましくは炭素数1〜12であり、例えばアセチル、ベンゾイル、メトキシカルボニル、フェニルオキシカルボニル、ジメチルアミノカルボニル、フェニルアミノカルボニル、等が挙げられる。)、アミノ基(好ましくは炭素数0〜20、より好ましくは炭素数1〜16、特に好ましくは炭素数1〜12であり、例えばジメチルアミノ、メチルカルボニルアミノ、エチルスルフォニルアミノ、ジメチルアミノカルボニルアミノ基、フタルイミド基等が挙げられる。)、スルホニル基(好ましくは炭素数1〜20、より好ましくは炭素数1〜16、特に好ましくは炭素数1〜12であり、例えばメシル、トシル等が挙げられる。)、スルホ基、カルボキシル基、ヘテロ環基(脂肪族ヘテロ環基、芳香族ヘテロ環基がある。好ましくは、酸素原子、硫黄原子、窒素原子のいずれかを含み、好ましくは炭素数1〜50、より好ましくは炭素数1〜30、特に好ましくは炭素数2〜12であり、例えばイミダゾリル、ピリジル、フリル、ピペリジル、モルホリノ、ベンゾオキサゾリル、トリアゾリル基等が挙げられる。)、ヒドロキシ基、アルコキシ基(好ましくは炭素数1〜20、より好ましくは炭素数1〜16、特に好ましくは炭素数1〜12であり、例えばメトキシ基、ベンジルオキシ基等が挙げられる。)、アリールオキシ基(好ましくは炭素数6〜20、より好ましくは炭素数6〜16、特に好ましくは炭素数6〜12であり、例えばフェノキシ基、ナフチルオキシ基等が挙げられる。)、ハロゲン原子(好ましくはフッ素原子、塩素原子、臭素原子、沃素原子)、チオール基、アルキルチオ基(好ましくは炭素数1〜20、より好ましくは炭素数1〜16、特に好ましくは炭素数1〜12であり、例えばメチルチオ基等が挙げられる)、アリールチオ基(好ましくは炭素数6〜20、より好ましくは炭素数6〜16、特に好ましくは炭素数6〜12であり、例えばフェニルチオ基等が挙げられる)、シアノ基、シリル基(好ましくは炭素数0〜40、より好ましくは炭素数3〜30、特に好ましくは炭素数3〜18であり、例えばトリメチルシリル基、トリフェニルシリル基、t−ブチルジフェニルシリル基等が挙げられる)等が挙げられる。
(Substituent group A)
An alkyl group (preferably having 1 to 20 carbon atoms, more preferably 1 to 12 carbon atoms, particularly preferably 1 to 8 carbon atoms, such as methyl, ethyl, iso-propyl, tert-butyl, n-octyl, n- Decyl, n-hexadecyl, cyclopropyl, cyclopentyl, cyclohexyl, etc.), an alkenyl group (preferably having 2 to 20 carbon atoms, more preferably 2 to 12 carbon atoms, particularly preferably 2 to 8 carbon atoms, For example, vinyl, allyl, 2-butenyl, 3-pentenyl, etc.), alkynyl groups (preferably having 2 to 20 carbon atoms, more preferably 2 to 12 carbon atoms, particularly preferably 2 to 8 carbon atoms, For example, propargyl, 3-pentynyl, etc.), aryl groups (preferably having 6 to 30 carbon atoms, more preferably 6 to 2 carbon atoms). Particularly preferably 6 to 12 carbon atoms, such as phenyl, p-methylphenyl, naphthyl, etc.), a substituted carbonyl group (preferably 1 to 20 carbon atoms, more preferably 1 to 16 carbon atoms, especially Preferably it has 1 to 12 carbon atoms, such as acetyl, benzoyl, methoxycarbonyl, phenyloxycarbonyl, dimethylaminocarbonyl, phenylaminocarbonyl, etc.), amino group (preferably having 0 to 20 carbon atoms, more preferably Has 1 to 16 carbon atoms, particularly preferably 1 to 12 carbon atoms, and examples thereof include dimethylamino, methylcarbonylamino, ethylsulfonylamino, dimethylaminocarbonylamino group, phthalimide group, and the like, and sulfonyl groups (preferably. 1 to 20 carbon atoms, more preferably 1 to carbon atoms 6, particularly preferably having 1 to 12 carbon atoms, such as mesyl, tosyl, etc.), sulfo group, carboxyl group, heterocyclic group (aliphatic heterocyclic group, aromatic heterocyclic group. , An oxygen atom, a sulfur atom, or a nitrogen atom, preferably 1 to 50 carbon atoms, more preferably 1 to 30 carbon atoms, particularly preferably 2 to 12 carbon atoms, such as imidazolyl, pyridyl, furyl, Piperidyl, morpholino, benzoxazolyl, triazolyl group, etc.), hydroxy group, alkoxy group (preferably having 1 to 20 carbon atoms, more preferably 1 to 16 carbon atoms, particularly preferably 1 to 12 carbon atoms). For example, a methoxy group, a benzyloxy group, etc.), an aryloxy group (preferably having 6 to 20 carbon atoms, more preferably 6 carbon atoms). To 16, particularly preferably 6 to 12, and examples thereof include a phenoxy group and a naphthyloxy group. ), Halogen atoms (preferably fluorine atoms, chlorine atoms, bromine atoms, iodine atoms), thiol groups, alkylthio groups (preferably having 1 to 20 carbon atoms, more preferably 1 to 16 carbon atoms, and particularly preferably 1 to 1 carbon atoms). 12 such as a methylthio group, and an arylthio group (preferably having 6 to 20 carbon atoms, more preferably 6 to 16 carbon atoms, and particularly preferably 6 to 12 carbon atoms, such as a phenylthio group). ), Cyano group, silyl group (preferably having 0 to 40 carbon atoms, more preferably 3 to 30 carbon atoms, particularly preferably 3 to 18 carbon atoms, such as trimethylsilyl group, triphenylsilyl group, t-butyldiphenyl And a silyl group).
X13は酸素原子、硫黄原子、−C(R13)R14、−又は−NR15−を表す。R13、R14、R15は水素原子又は置換基を表す。R13、R14で表される置換基としては、R11、R12で表されるアリール基、R11、R12が連結して形成されるヘテロ環基に置換する置換基として挙げたものが適用できる。R13、R14は好ましくは水素原子、アルキル基、アリール基であり、より好ましくは水素原子、アルキル基であり、さらに好ましくはアルキル基である。 X 13 represents an oxygen atom, a sulfur atom, —C (R 13 ) R 14 , — or —NR 15 —. R 13 , R 14 and R 15 each represents a hydrogen atom or a substituent. As the substituent represented by R 13, R 14, those described as substituent groups for substituting a heterocyclic group in which an aryl group represented by R 11, R 12, R 11 , R 12 is formed by connecting Is applicable. R 13 and R 14 are preferably a hydrogen atom, an alkyl group or an aryl group, more preferably a hydrogen atom or an alkyl group, and still more preferably an alkyl group.
R15で表される置換基としては、置換基群Bが挙げられる。 Examples of the substituent represented by R 15 include substituent group B.
(置換基群B)
アルキル基(好ましくは炭素数1〜20、より好ましくは炭素数1〜12、特に好ましくは炭素数1〜8であり、例えばメチル、エチル、iso−プロピル、tert−ブチル、n−オクチル、n−デシル、n−ヘキサデシル、シクロプロピル、シクロペンチル、シクロヘキシル等が挙げられる。)、アルケニル基(好ましくは炭素数2〜20、より好ましくは炭素数2〜12、特に好ましくは炭素数2〜8であり、例えばビニル、アリル、2−ブテニル、3−ペンテニル等が挙げられる。)、アルキニル基(好ましくは炭素数2〜20、より好ましくは炭素数2〜12、特に好ましくは炭素数2〜8であり、例えばプロパルギル、3−ペンチニル等が挙げられる。)、アリール基(好ましくは炭素数6〜30、より好ましくは炭素数6〜20、特に好ましくは炭素数6〜12であり、例えばフェニル、p−メチルフェニル、ナフチル等が挙げられる。)、置換カルボニル基(好ましくは炭素数1〜20、より好ましくは炭素数1〜16、特に好ましくは炭素数1〜12であり、例えばアセチル、ベンゾイル、メトキシカルボニル、フェニルオキシカルボニル、ジメチルアミノカルボニル、フェニルアミノカルボニル、等が挙げられる。)、置換スルホニル基(好ましくは炭素数1〜20、より好ましくは炭素数1〜16、特に好ましくは炭素数1〜12であり、例えばメシル、トシル等が挙げられる。)、ヘテロ環基(脂肪族ヘテロ環基、芳香族ヘテロ環基がある。好ましくは、酸素原子、硫黄原子、窒素原子のいずれかを含み、好ましくは炭素数1〜50、より好ましくは炭素数1〜30、特に好ましくは炭素数2〜12であり、例えばイミダゾリル、ピリジル、フリル、ピペリジル、モルホリノ、ベンゾオキサゾリル、トリアゾリル基等が挙げられる。)等が挙げられる。R15は好ましくはアルキル基、アリール基、芳香族ヘテロ環基であり、より好ましくは、アルキル基、アリール基であり、さらに好ましくはアリール基である。
(Substituent group B)
An alkyl group (preferably having 1 to 20 carbon atoms, more preferably 1 to 12 carbon atoms, particularly preferably 1 to 8 carbon atoms, such as methyl, ethyl, iso-propyl, tert-butyl, n-octyl, n- Decyl, n-hexadecyl, cyclopropyl, cyclopentyl, cyclohexyl, etc.), an alkenyl group (preferably having 2 to 20 carbon atoms, more preferably 2 to 12 carbon atoms, particularly preferably 2 to 8 carbon atoms, For example, vinyl, allyl, 2-butenyl, 3-pentenyl, etc.), alkynyl groups (preferably having 2 to 20 carbon atoms, more preferably 2 to 12 carbon atoms, particularly preferably 2 to 8 carbon atoms, For example, propargyl, 3-pentynyl, etc.), aryl groups (preferably having 6 to 30 carbon atoms, more preferably 6 to 2 carbon atoms). Particularly preferably 6 to 12 carbon atoms, such as phenyl, p-methylphenyl, naphthyl, etc.), a substituted carbonyl group (preferably 1 to 20 carbon atoms, more preferably 1 to 16 carbon atoms, especially Preferably it is C1-C12, for example, acetyl, benzoyl, methoxycarbonyl, phenyloxycarbonyl, dimethylaminocarbonyl, phenylaminocarbonyl, etc.), a substituted sulfonyl group (preferably C1-C20, more). Preferably it is C1-C16, Most preferably, it is C1-C12, for example, a mesyl, tosyl etc. are mentioned), a heterocyclic group (an aliphatic heterocyclic group, an aromatic heterocyclic group. Preferably. , An oxygen atom, a sulfur atom, or a nitrogen atom, preferably 1 to 50 carbon atoms, more preferably carbon 30, particularly preferably 2 to 12 carbon atoms, for example imidazolyl, pyridyl, furyl, piperidyl, morpholino, benzoxazolyl, triazolyl group and the like.), And the like. R 15 is preferably an alkyl group, an aryl group, or an aromatic heterocyclic group, more preferably an alkyl group or an aryl group, and still more preferably an aryl group.
Z1は式中に示された点線が結合する原子を含んで、5員環又は6員環の形成に必要な原子群を表す。Z1を含む環は置換基を有していても良く(置換基としてはR11、R12で表されるアリール基やR11、R12が連結して形成されるヘテロ環基に置換する置換基として挙げたものが適用できる。)、また他の環と縮合しても良い。 Z 1 represents an atomic group necessary for forming a 5-membered ring or a 6-membered ring, including an atom to which the dotted line shown in the formula is bonded. Ring containing Z 1 is as may (substituent may have a substituent substituted on the heterocyclic group aryl group or R 11, R 12 represented by R 11, R 12 is formed by connecting Those listed as substituents can be applied.) Further, they may be condensed with other rings.
上記Z1を含む環としては、例えば、シクロペンテン、シクロヘキセン、ベンゼン、ナフタレン、アントラセン、フェナントレン、ピレン、ペリレン、ピリジン、キノリン、フラン、チオフェン、ピラジン、ピリミジン、チアゾール、ベンゾチアゾール、ナフトチアゾール、オキサゾール、ベンゾオキサゾール、ナフトオキサゾール、イソオキサゾール、セレナゾール、ベンゾセレナゾール、ナフトセレナゾール、イミダゾール、ベンゾイミダゾール、ナフトイミダゾール、イソキノリン、ピラゾール、トリアゾール等が挙げられる。Z1を含む環は、芳香環であることが好ましい。例えばベンゼン、ナフタレン、アントラセン、ピリジン、チオフェン、ピラジン、ピリミジンであり、より好ましくはベンゼン、ナフタレンであり、さらに好ましくはベンゼンである。 Examples of the ring containing Z 1 include cyclopentene, cyclohexene, benzene, naphthalene, anthracene, phenanthrene, pyrene, perylene, pyridine, quinoline, furan, thiophene, pyrazine, pyrimidine, thiazole, benzothiazole, naphthothiazole, oxazole, benzo Examples thereof include oxazole, naphthoxazole, isoxazole, selenazole, benzoselenazole, naphthselenazole, imidazole, benzimidazole, naphthimidazole, isoquinoline, pyrazole, triazole and the like. The ring containing Z 1 is preferably an aromatic ring. For example, benzene, naphthalene, anthracene, pyridine, thiophene, pyrazine, and pyrimidine are preferable, benzene and naphthalene are more preferable, and benzene is more preferable.
M1は金属イオンを表す。金属イオンとしては特に限定されないが、好ましくは周期律表(長周期型)の第2周期〜第4周期に含まれる金属のイオンであり、より好ましくは二価もしくは三価の金属イオンであり、さらに好ましくは、Be2+、Mg2+、Al3+、Zn2+、Ga3+、Cu2+であり、特に好ましくは、Al3+、Zn2+、Ga3+である。 M 1 represents a metal ion. The metal ion is not particularly limited, but is preferably a metal ion included in the second to fourth periods of the periodic table (long period type), more preferably a divalent or trivalent metal ion, More preferred are Be 2+ , Mg 2+ , Al 3+ , Zn 2+ , Ga 3+ and Cu 2+ , and particularly preferred are Al 3+ , Zn 2+ and Ga 3+ .
L1は単座又は多座の配位子を表す。配位子としてはえば、ハロゲンイオン(例えばCl-、Br-、I-等が挙げられる)、パークロレートイオン、アルコキシイオン(好ましくは炭素数1〜20、より好ましくは1〜10、さらに好ましくは1〜5であり、例えばメトキシイオン、エトキシイオン、イソプロポキシイオン、アセチルアセトネートイオン等が挙げられる)、アリールオキシイオン(好ましくは炭素数6〜20、より好ましくは6〜12、さらに好ましくは6〜8であり、例えばフェノキシイオン、キノリノールイオン、2−(2−ヒドロキシフェニル)ベンゾアゾールイオン等が挙げられる)、シリルオキシイオン(好ましくは炭素数3〜20、より好ましくは11〜20であり、例えばトリフェニルシリルオキシイオン等が挙げられる)、含窒素ヘテロ環(好ましくは炭素数1〜20、より好ましくは2〜10、さらに好ましくは3〜8であり、フェナンスレン、ビピリジル等が挙げられる)、アシルオキシイオン(好ましくは炭素数1〜20、より好ましくは2〜10、さらに好ましくは3〜8であり、アセトキシイオン等が挙げられる)、エーテル化合物(好ましくは炭素数2〜20、特に好ましくは3〜10、さらに好ましくは3〜8であり、テトラヒドロフラン等が挙げられる)、ヒドロキシイオン等が挙げられる。より好ましくはアルコキシイオン、アリールオキシイオン、シリルオキシイオンであり、特に好ましくは、アリールオキシイオンである。 L 1 represents a monodentate or multidentate ligand. Examples of the ligand include halogen ions (for example, Cl − , Br − , I − and the like), perchlorate ions, and alkoxy ions (preferably having 1 to 20 carbon atoms, more preferably 1 to 10 carbon atoms, still more preferably 1 to 5, for example, methoxy ion, ethoxy ion, isopropoxy ion, acetylacetonate ion and the like, aryloxy ion (preferably having 6 to 20 carbon atoms, more preferably 6 to 12 carbon atoms, still more preferably 6). -8, for example, phenoxy ion, quinolinol ion, 2- (2-hydroxyphenyl) benzoazole ion, etc.), silyloxy ion (preferably having 3-20 carbon atoms, more preferably 11-20, For example, triphenylsilyloxy ion and the like), nitrogen-containing heterocycle ( Preferably, it has 1 to 20 carbon atoms, more preferably 2 to 10 carbon atoms, more preferably 3 to 8 carbon atoms such as phenanthrene and bipyridyl, and acyloxy ions (preferably 1 to 20 carbon atoms, more preferably 2 to 2 carbon atoms). 10, more preferably 3 to 8 and examples thereof include acetoxy ions and the like, ether compounds (preferably having 2 to 20 carbon atoms, particularly preferably 3 to 10 and further preferably 3 to 8, and tetrahydrofuran and the like. And hydroxy ions and the like. More preferred are alkoxy ions, aryloxy ions, and silyloxy ions, and particularly preferred are aryloxy ions.
n1は1以上の整数を表し、m1は0以上の整数を表す。n1、m1の好ましい範囲は金属イオンにより異なり特に限定されないが、n1は1〜4が好ましく、より好ましくは1〜3であり、特に好ましくは、2、3である。m1は0〜2が好ましく、より好ましくは0、1であり、特に好ましくは0である。n1、m1の数の組み合わせは一般式(I)で表される化合物が中性錯体となる数の組み合わせが好ましい。 n 1 represents an integer of 1 or more, and m 1 represents an integer of 0 or more. The preferred range of n 1 and m 1 varies depending on the metal ion and is not particularly limited, but n 1 is preferably 1 to 4, more preferably 1 to 3, and particularly preferably 2 or 3. m 1 is preferably 0 to 2, more preferably 0 or 1, and particularly preferably 0. The combination of the numbers of n 1 and m 1 is preferably a combination of numbers in which the compound represented by the general formula (I) becomes a neutral complex.
一般式(I)で表される化合物は、一般式(II)で表される化合物が好ましい。一般式(II)中、Q2は式中に示された点線が結合する原子を含んで、ヘテロ環の形成に必要な原子群を表す。X2は酸素原子、硫黄原子、−C(R21)R22−又は−NR23−を表す。R21、R22、R23は水素原子又は置換基を表す。Z2は式中に示された点線が結合する原子を含んで、5員環又は6員環の形成に必要な原子群を表す。M2は金属イオンを表す。n2は1以上の整数を表す。L2は配位子を表し、m2は0以上の整数を表す。 The compound represented by the general formula (I) is preferably a compound represented by the general formula (II). In the general formula (II), Q 2 represents an atomic group necessary for forming a heterocycle, including an atom to which the dotted line shown in the formula is bonded. X 2 represents an oxygen atom, a sulfur atom, —C (R 21 ) R 22 — or —NR 23 —. R 21 , R 22 and R 23 represent a hydrogen atom or a substituent. Z 2 represents an atomic group necessary for forming a 5-membered ring or a 6-membered ring, including the atom to which the dotted line shown in the formula is bonded. M 2 represents a metal ion. n 2 represents an integer of 1 or more. L 2 represents a ligand, and m 2 represents an integer of 0 or more.
Q2はヘテロ環の形成に必要な原子群を表す。Q2は、5員環又は6員環のヘテロ環の形成に必要な原子群であることが好ましく、5員環又は6員環の含窒素ヘテロ環の形成に必要な原子群であることがより好ましい。Q2で形成されるヘテロ環としては、窒素原子、酸素原子、硫黄原子を含むものが好ましく、例えばピリジン環、ピラジン環、ピリミジン環、ピリダジン環、トリアジン環、チオフェン環、フラン環、ピロール環、イミダゾール環、オキサゾール環、チアゾール環、トリアゾール環等が挙げられ、好ましくはピリジン環、ピラジン環、ピリミジン環であり、より好ましくはピリジン環、ピラジン環であり、さらに好ましくはピリジン環である。Q2は置換基を有していても良く(置換基としてはR11、R12で表されるアリール基やR11、R12が連結して形成されるヘテロ環基に置換する置換基として挙げたものが適用できる。)、また他の環と縮合しても良い。 Q 2 represents an atomic group necessary for forming a heterocycle. Q 2 is preferably an atomic group necessary for forming a 5-membered or 6-membered heterocycle, and is preferably an atomic group necessary for forming a 5-membered or 6-membered nitrogen-containing heterocycle. More preferred. The heterocycle formed by Q 2 is preferably one containing a nitrogen atom, an oxygen atom or a sulfur atom. For example, a pyridine ring, pyrazine ring, pyrimidine ring, pyridazine ring, triazine ring, thiophene ring, furan ring, pyrrole ring, Examples include an imidazole ring, an oxazole ring, a thiazole ring, and a triazole ring, preferably a pyridine ring, a pyrazine ring, and a pyrimidine ring, more preferably a pyridine ring and a pyrazine ring, and still more preferably a pyridine ring. Q 2 is a substituent as may (substituent group which may have a substituent substituted on the heterocyclic group aryl group or R 11 is represented by R 11, R 12, R 12 is formed by connecting The above can be applied), and may be condensed with other rings.
X2、R21、R22、R23、Z2、M2、L2、n2、m2はそれぞれ一般式(I)中のX13、R13、R14、R15、Z1、M1、L1、n1、m1と同義であり、また好ましい範囲も同様である。 X 2 , R 21 , R 22 , R 23 , Z 2 , M 2 , L 2 , n 2 , and m 2 are X 13 , R 13 , R 14 , R 15 , Z 1 , in general formula (I), respectively. M 1, is L 1, n 1, m 1 synonymous, and preferred ranges are also the same.
一般式(II)で表される化合物は、一般式(III)で表される化合物が好ましい。一般式(III)中、Q3は式中に示された点線が結合する原子を含んで、6員の含窒素ヘテロ環の形成に必要な原子群を表す。6員の含窒素ヘテロ環として好ましくは、ピリジン環、ピラジン環、ピリミジン環、ピリダジン環、トリアジン環であり、好ましくはピリジン環、ピラジン環、ピリミジン環であり、より好ましくはピリジン環、ピラジン環であり、さらに好ましくはピリジン環である。X3は酸素原子、硫黄原子、−C(R31)R32−又は−NR33−を表す。R31、R32、R33は水素原子又は置換基を表す。R34、R35、R36、R37は水素原子又は置換基を表す。M3は金属イオンを表す。n3は1以上の整数を表す。L3は配位子を表し、m3は0以上の整数を表す。 The compound represented by the general formula (II) is preferably a compound represented by the general formula (III). In the general formula (III), Q 3 represents an atomic group necessary for forming a 6-membered nitrogen-containing heterocycle including the atom to which the dotted line shown in the formula is bonded. The 6-membered nitrogen-containing heterocycle is preferably a pyridine ring, pyrazine ring, pyrimidine ring, pyridazine ring or triazine ring, preferably a pyridine ring, pyrazine ring or pyrimidine ring, more preferably a pyridine ring or pyrazine ring. More preferably a pyridine ring. X 3 represents an oxygen atom, a sulfur atom, —C (R 31 ) R 32 — or —NR 33 —. R 31 , R 32 and R 33 represent a hydrogen atom or a substituent. R 34 , R 35 , R 36 and R 37 represent a hydrogen atom or a substituent. M 3 represents a metal ion. n 3 represents an integer of 1 or more. L 3 represents a ligand, and m 3 represents an integer of 0 or more.
Q3、X3、R31、R32、R33、M3、L3、n3、m3はそれぞれ一般式(II)中のQ2、一般式(I)中のX13、R13、R14、R15、M1、L1、n1、m1と同義であり、また好ましい範囲も同様である。 Q 3 , X 3 , R 31 , R 32 , R 33 , M 3 , L 3 , n 3 , and m 3 are respectively Q 2 in general formula (II) and X 13 , R 13 in general formula (I). , R 14 , R 15 , M 1 , L 1 , n 1 , m 1 , and the preferred range is also the same.
R34、R35、R36、R37は水素原子又は置換基を表す。これらの置換基は互いに結合して縮合環を形成していても良い。置換基としては一般式(I)中のR11、R12で表されるアリール基やR11、R12が連結して形成されるヘテロ環基に置換する置換基として挙げたものが適用できる。R34、R35、R36、R37として好ましくは、水素原子、アルキル基、アリール基、シアノ基、フルオロ基、ペルフルオロ置換アルキル基、ヘテロ環基、アミノ基、アルコキシ基、アリールオキシ基、R34〜R36が互いに結合して縮合環を形成したものであり、より好ましくは水素原子、アルキル基、フルオロ基、ペルフルオロ置換アルキル基であり、さらに好ましくは水素原子、アルキル基、フルオロ基であり、特に好ましくは水素原子である。 R 34 , R 35 , R 36 and R 37 represent a hydrogen atom or a substituent. These substituents may be bonded to each other to form a condensed ring. As the substituent, those exemplified as the substituent substituted on the aryl group represented by R 11 and R 12 in the general formula (I) and the heterocyclic group formed by linking R 11 and R 12 can be applied. . R 34 , R 35 , R 36 and R 37 are preferably a hydrogen atom, alkyl group, aryl group, cyano group, fluoro group, perfluoro-substituted alkyl group, heterocyclic group, amino group, alkoxy group, aryloxy group, R 34 to R 36 are bonded to each other to form a condensed ring, more preferably a hydrogen atom, an alkyl group, a fluoro group, or a perfluoro-substituted alkyl group, and still more preferably a hydrogen atom, an alkyl group, or a fluoro group. Particularly preferred is a hydrogen atom.
一般式(III)で表される化合物は、好ましくは一般式(IV)で表される化合物である。一般式(IV)中、R41、R42、R43、R44、R45、R46、R47及びR48は水素原子又は置換基を表す。M4は二価又は三価の金属イオンを表す。n4は1〜3の整数を表す。L4は配位子を表し、m4は0〜2の整数を表す。 The compound represented by the general formula (III) is preferably a compound represented by the general formula (IV). In the general formula (IV), R 41 , R 42 , R 43 , R 44 , R 45 , R 46 , R 47 and R 48 represent a hydrogen atom or a substituent. M 4 represents a divalent or trivalent metal ion. n 4 represents an integer of 1-3. L 4 represents a ligand, and m 4 represents an integer of 0 to 2.
R41、R42、R43は水素原子又は置換基を表す。これらの置換基は互いに結合して縮合環を形成していても良い。置換基としては一般式(I)中のR11、R12で表されるアリール基やR11、R12が連結して形成されるヘテロ環基に置換する置換基として挙げたものが適用できる。R41、R42、R43として好ましくは、水素原子、アルキル基、アリール基、シアノ基、フルオロ基、ペルフルオロ置換アルキル基、ヘテロ環基、アミノ基、アルコキシ基、アリールオキシ基、R34〜R36が互いに結合して縮合環を形成したものであり、より好ましくは水素原子、アルキル基であり、さらに好ましくは水素原子である。 R 41 , R 42 and R 43 each represents a hydrogen atom or a substituent. These substituents may be bonded to each other to form a condensed ring. As the substituent, those exemplified as the substituent substituted on the aryl group represented by R 11 and R 12 in the general formula (I) and the heterocyclic group formed by linking R 11 and R 12 can be applied. . R 41 , R 42 and R 43 are preferably a hydrogen atom, an alkyl group, an aryl group, a cyano group, a fluoro group, a perfluoro-substituted alkyl group, a heterocyclic group, an amino group, an alkoxy group, an aryloxy group, R 34 to R 36 are bonded to each other to form a condensed ring, more preferably a hydrogen atom or an alkyl group, and still more preferably a hydrogen atom.
R45、R46、R47、R48、R44、M4、L4、n4、m4はそれぞれ一般式(III)中のR34、R35、R36、R37、一般式(I)中のR15、M1、L1、n1、m1と同義であり、また好ましい範囲も同様である。 R 45 , R 46 , R 47 , R 48 , R 44 , M 4 , L 4 , n 4 , and m 4 are R 34 , R 35 , R 36 , R 37 , general formula (III) in general formula (III), respectively. It is synonymous with R 15 , M 1 , L 1 , n 1 and m 1 in I), and the preferred range is also the same.
一般式(I)乃至(IV)で表される化合物の具体例を以下に列挙するが、本発明はこれらに限定されない。 Specific examples of the compounds represented by the general formulas (I) to (IV) are listed below, but the present invention is not limited thereto.
本発明の有機EL素子の好ましい第二の形態は、発光層に一般式(V)で表される化合物を含有する形態であり、好ましくはホスト材料として機能することが好ましい。一般式(V)中、R53は水素原子又は置換基を表す。X51は窒素原子又はC−R51を表す。X52は窒素原子又はC−R52を表す。R51、R52は水素原子又は置換基を表す。Z5は式中に示された点線が結合する原子を含んで、5員環又は6員環の形成に必要な原子群を表す。M5は金属イオンを表す。n5は1以上の整数を表す。L5は配位子を表し、m5は0以上の整数を表す。 A preferred second form of the organic EL device of the present invention is a form containing a compound represented by the general formula (V) in the light emitting layer, and preferably functions as a host material. In the general formula (V), R 53 represents a hydrogen atom or a substituent. X 51 represents a nitrogen atom or C—R 51 . X 52 represents a nitrogen atom or C—R 52 . R 51 and R 52 represent a hydrogen atom or a substituent. Z 5 represents an atomic group necessary for forming a 5-membered ring or a 6-membered ring, including the atom to which the dotted line shown in the formula is bonded. M 5 represents a metal ion. n 5 represents an integer of 1 or more. L 5 represents a ligand, and m 5 represents an integer of 0 or more.
R53は水素原子又は置換基を表す。置換基としては一般式(I)中のR11、R12で表されるアリール基やR11、R12が連結して形成されるヘテロ環基に置換する置換基として挙げたものが適用できる。R53として好ましくは水素原子、アルキル基、アリール基、芳香族ヘテロ環基であり、より好ましくはアルキル基、アリール基、芳香族ヘテロ環基であり、さらに好ましくはアリール基である。 R 53 represents a hydrogen atom or a substituent. As the substituent, those exemplified as the substituent substituted on the aryl group represented by R 11 and R 12 in the general formula (I) and the heterocyclic group formed by linking R 11 and R 12 can be applied. . R 53 is preferably a hydrogen atom, an alkyl group, an aryl group, or an aromatic heterocyclic group, more preferably an alkyl group, an aryl group, or an aromatic heterocyclic group, and further preferably an aryl group.
X51は窒素原子又はC−R51を表し、X52は窒素原子又はC−R52を表す。R51、R52は水素原子又は置換基を表す。R51、R52は互いに結合して5員又は6員のヘテロ環基、アリール基、又はヘテロアリール基を形成しても良い。置換基としては、一般式(I)中のR11、R12で表されるアリール基やR11、R12が連結して形成されるヘテロ環基に置換する置換基として挙げたものが適用できる。R51、R52として好ましくは、水素原子、アルキル基、アリール基、芳香族ヘテロ環基、互いに結合して芳香族炭化水素環を形成する基、互いに結合して芳香族ヘテロ環基を形成する基であり、より好ましくは水素原子、アルキル基、アリール基、互いに結合して芳香族炭化水素環を形成する基、互いに結合して芳香族ヘテロ環基を形成する基であり、さらに好ましくは水素原子、アリール基、互いに結合して芳香族ヘテロ環を形成する基である。 X 51 represents a nitrogen atom or C—R 51 , and X 52 represents a nitrogen atom or C—R 52 . R 51 and R 52 represent a hydrogen atom or a substituent. R 51 and R 52 may combine with each other to form a 5-membered or 6-membered heterocyclic group, aryl group, or heteroaryl group. As the substituent, those exemplified as the substituent substituted on the aryl group represented by R 11 and R 12 in the general formula (I) or the heterocyclic group formed by linking R 11 and R 12 are applied. it can. R 51 and R 52 are preferably a hydrogen atom, an alkyl group, an aryl group, an aromatic heterocyclic group, a group that is bonded to each other to form an aromatic hydrocarbon ring, or a group that is bonded to each other to form an aromatic heterocyclic group. More preferably a hydrogen atom, an alkyl group, an aryl group, a group that is bonded to each other to form an aromatic hydrocarbon ring, a group that is bonded to each other to form an aromatic heterocyclic group, and more preferably a hydrogen atom An atom, an aryl group, or a group that is bonded to each other to form an aromatic heterocycle.
Z5、M5、L5、n5、m5はそれぞれ一般式(I)におけるZ1、M1、L1、n1、m1と同義であり、また好ましい範囲も同様である。 Z 5 , M 5 , L 5 , n 5 and m 5 have the same meanings as Z 1 , M 1 , L 1 , n 1 and m 1 in the general formula (I), respectively, and preferred ranges are also the same.
一般式(V)で表される化合物の具体例を以下に列挙するが、本発明はこれらに限定されない。 Specific examples of the compound represented by the general formula (V) are listed below, but the present invention is not limited thereto.
本発明の有機EL素子は、発光層にりん光発光材料をゲスト材料として用いて、励起三重項状態からの発光を利用する。励起三重項状態からの発光はりん光発光と同義である。以下、りん光を発する材料を「りん光材料」と称する。本発明の発光素子は少なくとも一種のりん光材料を含有する。本発明に用いられるりん光材料は特に限定されないが、遷移金属錯体が好ましい。遷移金属錯体の中心金属は特に限定されないが、好ましくはイリジウム、白金、レニウム、又はルテニウムであり、より好ましくはイリジウム又は白金であり、特に好ましくはイリジウムである。遷移金属錯体の中でも、オルトメタル化錯体が好ましく、オルトカルボメタル化錯体が好ましい。オルトメタル化錯体(Orthometalated Complex)とは、山本明夫著「有機金属 基礎と応用」、150頁及び232頁、裳華房社(1982年)やH.Yersin著「Photochemistry and Photophysics of Coordination Compound」、71〜77頁及び135〜146頁、Springer-Verlag社(1987年)等に記載されている化合物群の総称である。 The organic EL device of the present invention utilizes light emission from an excited triplet state using a phosphorescent material as a guest material in the light emitting layer. Light emission from the excited triplet state is synonymous with phosphorescence emission. Hereinafter, the phosphorescent material is referred to as “phosphorescent material”. The light emitting device of the present invention contains at least one phosphorescent material. The phosphorescent material used in the present invention is not particularly limited, but a transition metal complex is preferable. The central metal of the transition metal complex is not particularly limited, but is preferably iridium, platinum, rhenium, or ruthenium, more preferably iridium or platinum, and particularly preferably iridium. Among the transition metal complexes, orthometalated complexes are preferable, and orthocarbometalated complexes are preferable. Orthometalated Complex is “Organic Metal Fundamentals and Applications” written by Yamamoto Akio, pages 150 and 232, Hankabosha (1982) and “Photochemistry and Photophysics of Coordination Compound” by H. Yersin, It is a general term for a group of compounds described in pages 71 to 77 and pages 135 to 146, Springer-Verlag (1987) and the like.
本発明の発光素子は、発光層が発光材料としてのりん光材料とホスト材料としての金属錯体材料を含有することを特徴とする。りん光材料は一種単独で用いても二種以上を併用しても良く、ホスト材料もまた一種単独で用いても二種以上を併用しても良い。 The light emitting element of the present invention is characterized in that the light emitting layer contains a phosphorescent material as a light emitting material and a metal complex material as a host material. The phosphorescent material may be used alone or in combination of two or more, and the host material may be used alone or in combination of two or more.
本発明の有機EL素子において、発光層は、りん光材料と一般式(I)乃至(V)で表される化合物のみから構成される形態が好ましい。発光層での、一般式(I)乃至(V)で表される化合物とりん光材料との含有量比(質量比)は、50:50〜99.99:0.01が好ましく、70:30〜99.9:0.1がより好ましく、80:20〜99:1がさらに好ましい。 In the organic EL device of the present invention, it is preferable that the light emitting layer is composed of only a phosphorescent material and the compounds represented by the general formulas (I) to (V). The content ratio (mass ratio) of the compound represented by the general formulas (I) to (V) and the phosphorescent material in the light emitting layer is preferably 50:50 to 99.99: 0.01, 70: 30-99.9: 0.1 is more preferable, and 80: 20-99: 1 is further more preferable.
上記りん光材料は、20℃以上のりん光量子収率が70%以上であるのが好ましく、より好ましくは80%以上であり、さらに好ましくは85%以上である。 The phosphorescent material preferably has a phosphorescent quantum yield of 20 ° C. or higher of 70% or higher, more preferably 80% or higher, and still more preferably 85% or higher.
上記りん光発光材料としては、例えばUS 6303231 B1、US6097147、WO 00/57676、WO 00/70655、WO 01/08230、WO 01/39234 A2、WO 01/41512 A1、WO 02/02714 A2、WO 02/15645 A1、特開2001−247859、特願2000−33561、特願2001−189539、特願2001−248165、特願2001−33684、特願2001−239281、特願2001−219909、EP 1211257、特開2002−226495、特開2002−234894、特開2001−247859、特開2001−298470、特開2002−173674、特開2002−203678、特開2002−203679等の特許文献や、Nature、395巻、151頁(1998年)、Applied Physics Letters、75巻、4頁(1999年)、Polymer Preprints、41巻、770頁(2000年)、Jounal of American Chemical Society、123巻、4304頁(2001年)、Applied Physics Letters、79巻、2082頁(1999年)等の非特許文献に記載されているものが好適に利用できる。 Examples of the phosphorescent material include US 6303231 B1, US 6097147, WO 00/57676, WO 00/70655, WO 01/08230, WO 01/39234 A2, WO 01/41512 A1, WO 02/02714 A2, and WO 02. / 15645 A1, Japanese Patent Application Laid-Open No. 2001-247859, Japanese Patent Application No. 2000-33561, Japanese Patent Application No. 2001-189539, Japanese Patent Application No. 2001-248165, Japanese Patent Application No. 2001-339684, Japanese Patent Application No. 2001-239281, Japanese Patent Application No. 2001-219909, EP 12112257 JP 2002-226495, JP 2002-234894, JP 2001-247659, JP 2001-298470, JP 2002-173684, JP 2002-203678, JP 2002-203 679 et al., Nature, 395, 151 (1998), Applied Physics Letters, 75, 4 (1999), Polymer Preprints, 41, 770 (2000), Journal of American Chemical. Those described in non-patent literature such as Society, 123, 4304 (2001), Applied Physics Letters, 79, 2082 (1999) can be suitably used.
本発明の発光素子のシステム、駆動方法、利用形態等は特に限定されない。 There are no particular limitations on the system, driving method, mode of use, etc. of the light emitting device of the present invention.
本発明の発光素子における有機化合物層の形成方法は特に限定されず、抵抗加熱蒸着法、電子写真法、電子ビーム法、スパッタリング法、分子積層法、塗布法(スプレーコート法、ディップコート法、含浸法、ロールコート法、グラビアコート法、リバースコート法、ロールブラッシュ法、エアーナイフコート法、カーテンコート法、スピンコート法、フローコート法、バーコート法、マイクログラビアコート法、エアードクターコート、ブレードコート法、スクイズコート法、トランスファーロールコート法、キスコート法、キャストコート法、エクストルージョンコート法、ワイヤーバーコート法、スクリーンコート法等)、インクジェット法、印刷法、転写法等の方法が可能である。中でも素子の特性、製造の容易さ、コスト等を勘案すると、抵抗加熱蒸着法、塗布法、転写法が好ましい。発光素子が2層以上の積層構造を有する場合、上記方法を組み合わせて製造することも可能である。 The method for forming the organic compound layer in the light emitting device of the present invention is not particularly limited, and resistance heating vapor deposition, electrophotography, electron beam, sputtering, molecular lamination, coating (spray coating, dip coating, impregnation) Method, roll coat method, gravure coat method, reverse coat method, roll brush method, air knife coat method, curtain coat method, spin coat method, flow coat method, bar coat method, micro gravure coat method, air doctor coat, blade coat Methods, squeeze coating methods, transfer roll coating methods, kiss coating methods, cast coating methods, extrusion coating methods, wire bar coating methods, screen coating methods, etc.), inkjet methods, printing methods, transfer methods, and the like. Among these, the resistance heating vapor deposition method, the coating method, and the transfer method are preferable in consideration of the characteristics of the element, the ease of manufacture, the cost, and the like. When the light-emitting element has a stacked structure of two or more layers, it can be manufactured by combining the above methods.
塗布方法の場合、樹脂成分と共に溶解又は分散することができ、樹脂成分としては例えば、ポリ塩化ビニル、ポリカーボネート、ポリスチレン、ポリメチルメタクリレート、ポリエステル、ポリスルホン、ポリフェニレンオキシド、ポリブタジエン、ポリ(N−ビニルカルバゾール)、炭化水素樹脂、ケトン樹脂、フェノキシ樹脂、ポリアミド、エチルセルロース、酢酸ビニル、ABS樹脂、ポリウレタン、メラミン樹脂、不飽和ポリエステル樹脂、アルキド樹脂、エポキシ樹脂、シリコン樹脂等が挙げられる。 In the case of the coating method, it can be dissolved or dispersed together with the resin component. Examples of the resin component include polyvinyl chloride, polycarbonate, polystyrene, polymethyl methacrylate, polyester, polysulfone, polyphenylene oxide, polybutadiene, and poly (N-vinylcarbazole). , Hydrocarbon resin, ketone resin, phenoxy resin, polyamide, ethyl cellulose, vinyl acetate, ABS resin, polyurethane, melamine resin, unsaturated polyester resin, alkyd resin, epoxy resin, silicon resin and the like.
本発明の発光素子は少なくとも発光層を含むが、この他に有機層として正孔注入層、正孔輸送層、電子注入層、電子輸送層、保護層等を有していてもよく、またこれらの各層はそれぞれ他の機能を備えたものであっても良い。以下、各層の詳細について説明する。 The light-emitting device of the present invention includes at least a light-emitting layer, but may additionally have a hole injection layer, a hole transport layer, an electron injection layer, an electron transport layer, a protective layer, etc. as these organic layers. Each layer may be provided with other functions. Details of each layer will be described below.
正孔注入層、正孔輸送層の材料は、陽極から正孔を注入する機能、正孔を輸送する機能、陰極から注入された電子を障壁する機能のいずれかを有しているものであれば良く、具体例としてはカルバゾール、イミダゾール、トリアゾール、オキサゾール、オキサジアゾール、ポリアリールアルカン、ピラゾリン、ピラゾロン、フェニレンジアミン、アリールアミン、アミノ置換カルコン、スチリルアントラセン、フルオレノン、ヒドラゾン、スチルベン、シラザン、芳香族第三級アミン化合物、スチリルアミン、芳香族ジメチリディン化合物、ポルフィリン系化合物、ポリシラン系化合物、ポリ(N−ビニルカルバゾール)、アニリン系共重合体、チオフェンオリゴマー、ポリチオフェン等の導電性高分子オリゴマー、有機金属錯体、遷移金属錯体、又は上記化合物の誘導体等が挙げられる。 The material of the hole injection layer and the hole transport layer has any one of the function of injecting holes from the anode, the function of transporting holes, and the function of blocking electrons injected from the cathode. Specific examples include carbazole, imidazole, triazole, oxazole, oxadiazole, polyarylalkane, pyrazoline, pyrazolone, phenylenediamine, arylamine, amino-substituted chalcone, styrylanthracene, fluorenone, hydrazone, stilbene, silazane, aromatic Tertiary amine compounds, styrylamines, aromatic dimethylidin compounds, porphyrin compounds, polysilane compounds, poly (N-vinylcarbazole), aniline copolymers, thiophene oligomers, conductive polymer oligomers such as polythiophene, organic metals Complex, transition metal Body, or derivatives of the above compounds.
正孔注入層、正孔輸送層の膜厚は特に限定されるものではないが、通常1nm〜5μmの範囲のものが好ましく、より好ましくは5nm〜1μmであり、更に好ましくは10nm〜500nmである。正孔輸送層は上述した材料の一種又は二種以上からなる単層構造であっても良いし、同一組成又は異種組成の複数層からなる多層構造であっても良い。 The film thicknesses of the hole injection layer and the hole transport layer are not particularly limited, but are usually preferably in the range of 1 nm to 5 μm, more preferably 5 nm to 1 μm, and still more preferably 10 nm to 500 nm. . The hole transport layer may have a single layer structure composed of one or more of the above-described materials, or may have a multilayer structure composed of a plurality of layers having the same composition or different compositions.
電子注入層、電子輸送層の材料は、陰極から電子を注入する機能、電子を輸送する機能、陽極から注入され得た正孔を障壁する機能のいずれかを有しているものであれば良い。その具体例としては、例えばトリアゾール、トリアジン、オキサゾール、オキサジアゾール、フルオレノン、アントラキノジメタン、アントロン、ジフェニルキノン、チオピランジオキシド、カルボジイミド、フルオレニリデンメタン、ジスチリルピラジン、シロール、ナフタレンペリレン等の芳香環テトラカルボン酸無水物、フタロシアニン、8−キノリノール誘導体の金属錯体やメタルフタロシアニン、ベンゾオキサゾールやベンゾチアゾールを配位子とする金属錯体に代表される各種金属錯体、又は上記化合物の誘導体等が挙げられる。 The material for the electron injection layer and the electron transport layer may be any material that has any one of the function of injecting electrons from the cathode, the function of transporting electrons, and the function of blocking holes injected from the anode. . Specific examples thereof include, for example, triazole, triazine, oxazole, oxadiazole, fluorenone, anthraquinodimethane, anthrone, diphenylquinone, thiopyran dioxide, carbodiimide, fluorenylidenemethane, distyrylpyrazine, silole, naphthaleneperylene, and the like. Aromatic metal tetracarboxylic anhydrides, phthalocyanines, metal complexes of 8-quinolinol derivatives, metal phthalocyanines, various metal complexes represented by metal complexes having benzoxazole or benzothiazole as ligands, or derivatives of the above compounds Can be mentioned.
電子注入層、電子輸送層の膜厚は特に限定されるものではないが、通常1nm〜5μmの範囲のものが好ましく、より好ましくは5nm〜1μmであり、更に好ましくは10nm〜500nmである。電子注入層、電子輸送層は上述した材料の一種又は二種以上からなる単層構造であっても良いし、同一組成又は異種組成の複数層からなる多層構造であっても良い。 Although the film thickness of an electron injection layer and an electron carrying layer is not specifically limited, The thing of the range of 1 nm-5 micrometers is preferable normally, More preferably, it is 5 nm-1 micrometer, More preferably, it is 10 nm-500 nm. The electron injection layer and the electron transport layer may have a single layer structure made of one or more of the above-described materials, or may have a multilayer structure made of a plurality of layers having the same composition or different compositions.
本発明における発光層は、少なくとも一種のりん光材料と少なくとも一種の金属錯体を含有するが、他に複数の材料を併用していても良い。発光層に用いられる材料としては例えばベンゾオキサゾール、ベンゾイミダゾール、ベンゾチアゾール、スチリルベンゼン、ポリフェニル、ジフェニルブタジエン、テトラフェニルブタジエン、ナフタルイミド、クマリン、ペリレン、ペリノン、オキサジアゾール、アルダジン、ピラリジン、シクロペンタジエン、ビススチリルアントラセン、キナクリドン、ピロロピリジン、チアジアゾロピリジン、スチリルアミン、芳香族ジメチリディン化合物、ポリチオフェン、ポリフェニレン、ポリフェニレンビニレン等のポリマー化合物、又は上記化合物の誘導体等が挙げられる。 The light emitting layer in the present invention contains at least one phosphorescent material and at least one metal complex, but a plurality of other materials may be used in combination. Examples of materials used in the light emitting layer include benzoxazole, benzimidazole, benzothiazole, styrylbenzene, polyphenyl, diphenylbutadiene, tetraphenylbutadiene, naphthalimide, coumarin, perylene, perinone, oxadiazole, aldazine, pyralidine, and cyclopentadiene. Bisstyrylanthracene, quinacridone, pyrrolopyridine, thiadiazolopyridine, styrylamine, aromatic dimethylidin compounds, polythiophene, polyphenylene, polyphenylene vinylene, and other polymer compounds, or derivatives of the above compounds.
発光層は一層であっても、二層以上の多層であってもよい。発光層が複数の場合、それぞれの層が異なる発光色を発してもよい。発光層が複数の場合でも、それぞれの発光層はりん光材料と金属錯体のみから構成されるのが好ましい。発光層の膜厚は特に限定されるものではないが、通常1nm〜5μmの範囲のものが好ましく、より好ましくは5nm〜1μmであり、更に好ましくは10nm〜500nmである。 The light emitting layer may be a single layer or a multilayer of two or more layers. When there are a plurality of light emitting layers, each layer may emit different light emission colors. Even when there are a plurality of light emitting layers, each light emitting layer is preferably composed only of a phosphorescent material and a metal complex. Although the film thickness of a light emitting layer is not specifically limited, Usually, the thing of the range of 1 nm-5 micrometers is preferable, More preferably, it is 5 nm-1 micrometer, More preferably, it is 10 nm-500 nm.
保護層の材料としては水分や酸素等の素子劣化を促進するものが素子内に入る事を抑止する機能を有しているものであれば良い。その具体例としては、In、Sn、Pb、Au、Cu、Ag、Al、Ti、Ni等の金属、MgO、SiO、SiO2、Al2O3、GeO、NiO、CaO、BaO、Fe2O3、Y2O3、TiO2等の金属酸化物、MgF2、LiF、AlF3、CaF2等の金属フッ化物、ポリエチレン、ポリプロピレン、ポリメチルメタクリレート、ポリイミド、ポリウレア、ポリテトラフルオロエチレン、ポリクロロトリフルオロエチレン、ポリジクロロジフルオロエチレン、クロロトリフルオロエチレンとジクロロジフルオロエチレンの共重合体、テトラフルオロエチレンと少なくとも1種のコモノマーを含むモノマー混合物を共重合させて得られる共重合体、共重合主鎖に環状構造を有する含フッ素共重合体、吸水率1%以上の吸水性物質、吸水率0.1%以下の防湿性物質等が挙げられる。保護層の形成方法についても特に限定はなく、例えば真空蒸着法、スパッタリング法、反応性スパッタリング法、MBE(分子線エピタキシー)法、クラスターイオンビーム法、イオンプレーティング法、プラズマ重合法(高周波励起イオンプレーティング法)、プラズマCVD法、レーザーCVD法、熱CVD法、ガスソースCVD法、コーティング法、インクジェット法、印刷法、転写法、電子写真法を適用できる。 As the material for the protective layer, any material may be used as long as it has a function of preventing the material that promotes device deterioration such as moisture and oxygen from entering the device. Specific examples thereof include metals such as In, Sn, Pb, Au, Cu, Ag, Al, Ti, and Ni, MgO, SiO, SiO 2 , Al 2 O 3 , GeO, NiO, CaO, BaO, and Fe 2 O. 3 , metal oxides such as Y 2 O 3 and TiO 2 , metal fluorides such as MgF 2 , LiF, AlF 3 and CaF 2 , polyethylene, polypropylene, polymethyl methacrylate, polyimide, polyurea, polytetrafluoroethylene, polychloro Trifluoroethylene, polydichlorodifluoroethylene, a copolymer of chlorotrifluoroethylene and dichlorodifluoroethylene, a copolymer obtained by copolymerizing a monomer mixture containing tetrafluoroethylene and at least one comonomer, and a copolymer main chain A fluorine-containing copolymer having a cyclic structure, a water-absorbing substance having a water absorption rate of 1% or more, Examples include moisture-proof substances having a water content of 0.1% or less. There is no particular limitation on the method for forming the protective layer. For example, vacuum deposition, sputtering, reactive sputtering, MBE (molecular beam epitaxy), cluster ion beam, ion plating, plasma polymerization (high frequency excitation ions) Plating method), plasma CVD method, laser CVD method, thermal CVD method, gas source CVD method, coating method, ink jet method, printing method, transfer method, and electrophotographic method can be applied.
陽極は正孔注入層、正孔輸送層、発光層等に正孔を供給するものであり、金属、合金、金属酸化物、電気伝導性化合物、又はこれらの混合物等を用いることができ、好ましくは仕事関数が4eV以上の材料である。具体例としては酸化スズ、酸化亜鉛、酸化インジウム、酸化インジウムスズ(ITO)等の導電性金属酸化物、あるいは金、銀、クロム、ニッケル等の金属、さらにこれらの金属と導電性金属酸化物との混合物、又は積層物、ヨウ化銅、硫化銅等の無機導電性物質、ポリアニリン、ポリチオフェン、ポリピロール等の有機導電性材料、及びこれらとITOとの混合物・積層物等が挙げられ、好ましくは、導電性金属酸化物であり、特に、生産性、高伝導性、透明性等の観点からITOが好ましい。陽極の膜厚は材料により適宜選択可能であるが、通常10nm〜5μmの範囲のものが好ましく、より好ましくは50nm〜1μmであり、更に好ましくは100nm〜500nmである。 The anode supplies holes to a hole injection layer, a hole transport layer, a light emitting layer, and the like, and a metal, an alloy, a metal oxide, an electrically conductive compound, or a mixture thereof can be used, preferably Is a material having a work function of 4 eV or more. Specific examples include conductive metal oxides such as tin oxide, zinc oxide, indium oxide and indium tin oxide (ITO), metals such as gold, silver, chromium and nickel, and these metals and conductive metal oxides. Inorganic conductive materials such as laminates, copper iodide and copper sulfide, organic conductive materials such as polyaniline, polythiophene, and polypyrrole, and mixtures and laminates of these with ITO, It is a conductive metal oxide, and ITO is particularly preferable from the viewpoints of productivity, high conductivity, transparency, and the like. Although the film thickness of the anode can be appropriately selected depending on the material, it is usually preferably in the range of 10 nm to 5 μm, more preferably 50 nm to 1 μm, still more preferably 100 nm to 500 nm.
陽極は通常、ソーダライムガラス、無アルカリガラス、透明樹脂基板等の上に層形成したものが用いられる。ガラスを用いる場合、その材質については、ガラスからの溶出イオンを少なくするため、無アルカリガラスを用いることが好ましい。また、ソーダライムガラスを用いる場合、シリカ等のバリアコートを施したものを使用することが好ましい。基板の厚みは機械的強度を保つのに充分な厚みであれば特に制限はないが、ガラスを用いる場合には、通常0.2mm以上、好ましくは0.7mm以上のものを用いる。陽極の作製には材料によって種々の方法が用いられるが、例えばITOの場合、電子ビーム法、スパッタリング法、抵抗加熱蒸着法、イオンプレーティング法、化学反応法(ゾル−ゲル法等)、スプレー法、ディップ法、熱CVD法、プラズマCVD法、ITO分散物の塗布等の方法で膜形成される。陽極は洗浄その他の処理により、素子の駆動電圧を下げ、発光効率を高めることも可能である。例えばITOの場合、UV−オゾン処理、プラズマ処理等が効果的である。 As the anode, a layer formed on a soda-lime glass, non-alkali glass, a transparent resin substrate or the like is usually used. When glass is used, it is preferable to use non-alkali glass as the material in order to reduce ions eluted from the glass. Moreover, when using soda-lime glass, it is preferable to use what gave barrier coatings, such as a silica. The thickness of the substrate is not particularly limited as long as it is sufficient to maintain the mechanical strength. However, when glass is used, the thickness is usually 0.2 mm or more, preferably 0.7 mm or more. Various methods are used for producing the anode depending on the material. For example, in the case of ITO, an electron beam method, a sputtering method, a resistance heating vapor deposition method, an ion plating method, a chemical reaction method (sol-gel method, etc.), a spray method, etc. A film is formed by a method such as dipping, thermal CVD, plasma CVD, or ITO dispersion coating. The anode can be subjected to cleaning and other treatments to lower the drive voltage of the element and increase the light emission efficiency. For example, in the case of ITO, UV-ozone treatment, plasma treatment, etc. are effective.
陰極は電子注入層、電子輸送層、発光層等に電子を供給するものであり、電子注入層、電子輸送層、発光層等の陰極と隣接する層との密着性やイオン化ポテンシャル、安定性等を考慮して選ばれる。陰極の材料としては金属、合金、金属酸化物、電気伝導性化合物、又はこれらの混合物を用いることができ、具体例としてはアルカリ金属(例えばLi、Na、K、Cs等)又はそのフッ化物、アルカリ土類金属(例えばMg、Ca等)又はそのフッ化物、金、銀、鉛、アルミニウム、ナトリウム−カリウム合金、又はそれらの混合金属、リチウム−アルミニウム合金、又はそれらの混合金属、マグネシウム−銀合金、又はそれらの混合金属、インジウム、イッテルビウム等の希土類金属が挙げられ、好ましくは仕事関数が4eV以下の材料であり、より好ましくはアルミニウム、リチウム−アルミニウム合金、又はそれらの混合金属、マグネシウム−銀合金、又はそれらの混合金属等である。陰極の膜厚は材料により適宜選択可能であるが、通常10nm〜5μmの範囲のものが好ましく、より好ましくは50nm〜1μmであり、更に好ましくは100nm〜1μmである。陰極の作製には電子ビーム法、スパッタリング法、抵抗加熱蒸着法、コーティング法等の方法が用いられ、金属を単体で蒸着することも、二成分以上を同時に蒸着することもできる。さらに、複数の金属を同時に蒸着して合金電極を形成することも可能であり、またあらかじめ調製した合金を蒸着させても良い。陽極及び陰極のシート抵抗は低い方が好ましく、数百Ω/□以下が好ましい。 The cathode supplies electrons to the electron injection layer, the electron transport layer, the light emitting layer, etc., and the adhesion, ionization potential, stability, etc. between the cathode and the adjacent layer such as the electron injection layer, electron transport layer, light emitting layer, etc. Selected in consideration of As a material for the cathode, a metal, an alloy, a metal oxide, an electrically conductive compound, or a mixture thereof can be used. Specific examples include alkali metals (for example, Li, Na, K, Cs, etc.) or fluorides thereof, Alkaline earth metal (eg, Mg, Ca, etc.) or fluorides thereof, gold, silver, lead, aluminum, sodium-potassium alloy, or a mixed metal thereof, lithium-aluminum alloy, or a mixed metal thereof, magnesium-silver alloy Or a mixed metal thereof, or a rare earth metal such as indium or ytterbium, preferably a material having a work function of 4 eV or less, more preferably aluminum, a lithium-aluminum alloy, or a mixed metal thereof, a magnesium-silver alloy Or a mixed metal thereof. The film thickness of the cathode can be appropriately selected depending on the material, but is usually preferably in the range of 10 nm to 5 μm, more preferably 50 nm to 1 μm, still more preferably 100 nm to 1 μm. A method such as an electron beam method, a sputtering method, a resistance heating vapor deposition method, or a coating method is used for producing the cathode, and a metal can be vapor-deposited alone or two or more components can be vapor-deposited simultaneously. Furthermore, a plurality of metals can be vapor-deposited simultaneously to form an alloy electrode, or a previously prepared alloy may be vapor-deposited. The sheet resistance of the anode and the cathode is preferably low, and is preferably several hundred Ω / □ or less.
本発明の発光素子の有機層は、ホール輸送層、発光層、電子輸送層の三層構造もしくは、さらにホールブロック層を備えた四層構造であることが好ましい。 The organic layer of the light-emitting element of the present invention preferably has a three-layer structure of a hole transport layer, a light-emitting layer, and an electron transport layer, or a four-layer structure provided with a hole block layer.
本発明の発光素子は、種々の公知の工夫により、光取り出し効率を向上させることができる。例えば、基板表面形状を加工する(例えば微細な凹凸パターンを形成する)、基板・ITO層・有機層の屈折率を制御する、基板・ITO層・有機層の膜厚を制御すること等により、光の取り出し効率を向上させ、外部量子効率を向上させることが可能である。 The light-emitting element of the present invention can improve the light extraction efficiency by various known devices. For example, by processing the substrate surface shape (for example, forming a fine concavo-convex pattern), controlling the refractive index of the substrate / ITO layer / organic layer, controlling the film thickness of the substrate / ITO layer / organic layer, etc. It is possible to improve light extraction efficiency and external quantum efficiency.
本発明の発光素子は、陽極側から発光を取り出す、いわゆる、トップエミッション方式であっても良い。 The light-emitting element of the present invention may be a so-called top emission type in which light emission is extracted from the anode side.
本発明の発光素子で用いられる基材は、特に限定されないが、ジルコニア安定化イットリウム、ガラス等の無機材料、ポリエチレンテレフタレート、ポリブチレンテレフタレート、ポリエチレンナフタレート等のポリエステルや、ポリエチレン、ポリカーボネート、ポリエーテルスルホン、ポリアリレート、アリルジグリコールカーボネート、ポリイミド、ポリシクロオレフィン、ノルボルネン樹脂、ポリ(クロロトリフルオロエチレン)、テフロン、ポリテトラフルオロエチレン−ポリエチレン共重合体等の高分子量材料であっても良い。 The substrate used in the light-emitting device of the present invention is not particularly limited, but inorganic materials such as zirconia-stabilized yttrium and glass, polyesters such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate, polyethylene, polycarbonate, and polyethersulfone. , Polyarylate, allyl diglycol carbonate, polyimide, polycycloolefin, norbornene resin, poly (chlorotrifluoroethylene), Teflon, polytetrafluoroethylene-polyethylene copolymer, and the like.
本発明の有機電界発光素子の発光層は積層構造を少なくとも一つ有していても良い。積層数は2層以上50層以下が好ましく、4層以上30層以下がより好ましく、6層以上20層以下がさらに好ましい。 The light emitting layer of the organic electroluminescent element of the present invention may have at least one laminated structure. The number of stacked layers is preferably 2 or more and 50 or less, more preferably 4 or more and 30 or less, and still more preferably 6 or more and 20 or less.
積層を構成する各層の膜厚は特に限定されないが、0.2nm以上20nm以下が好ましく、0.4nm以上15nm以下がより好ましく、0.5nm以上10nm以下がさらに好ましく、1nm以上5nm以下が特に好ましい。 The thickness of each layer constituting the stack is not particularly limited, but is preferably 0.2 nm or more and 20 nm or less, more preferably 0.4 nm or more and 15 nm or less, further preferably 0.5 nm or more and 10 nm or less, and particularly preferably 1 nm or more and 5 nm or less. .
本発明の有機電界発光素子の発光層は複数のドメイン構造を有していても良い。発光層中に他のドメイン構造を有していても良い。各ドメインの径は、0.2nm以上10nm以下が好ましく、0.3nm以上5nm以下がより好ましく、0.5nm以上3nm以下がさらに好ましく、0.7nm以上2nm以下が特に好ましい。 The light emitting layer of the organic electroluminescent element of the present invention may have a plurality of domain structures. The light emitting layer may have another domain structure. The diameter of each domain is preferably from 0.2 nm to 10 nm, more preferably from 0.3 nm to 5 nm, further preferably from 0.5 nm to 3 nm, particularly preferably from 0.7 nm to 2 nm.
本発明の有機EL素子は、表示素子、ディスプレイ、バックライト、電子写真、照明光源、記録光源、露光光源、読み取り光源、標識、看板、インテリア、光通信等に好適に利用できる。 The organic EL element of the present invention can be suitably used for display elements, displays, backlights, electrophotography, illumination light sources, recording light sources, exposure light sources, reading light sources, signs, signboards, interiors, optical communications, and the like.
[実施例]
以下、実施例により本発明をさらに詳細に説明するが、本発明はこれらに限定されるものではない。
[Example]
EXAMPLES Hereinafter, although an Example demonstrates this invention further in detail, this invention is not limited to these.
(比較例1)
洗浄したITO基板を蒸着装置に入れ、TPD(N,N’−ジフェニル−N,N’−ジ(m−トリル)ベンジジン)を50nm蒸着し、この上にAlq及びIr(ppy)3を17:1の質量比で36nm蒸着し、さらにこの上に化合物aを36nm蒸着した。得られた有機薄膜上にパターニングしたマスク(発光面積が4mm×5mmとなる)を設置し、フッ化リチウムを3nm蒸着した後アルミニウムを60nm蒸着して比較例1の有機EL素子を作製した。
(Comparative Example 1)
The cleaned ITO substrate is put in a vapor deposition apparatus, and TPD (N, N′-diphenyl-N, N′-di (m-tolyl) benzidine) is vapor-deposited by 50 nm, and Alq and Ir (ppy) 3 are 17 thereon. The film was deposited at a mass ratio of 1 to 36 nm, and the compound a was further deposited to 36 nm. A patterned mask (with a light emission area of 4 mm × 5 mm) was placed on the obtained organic thin film, and after 3 nm of lithium fluoride was deposited, 60 nm of aluminum was deposited to prepare an organic EL device of Comparative Example 1.
得られた有機EL素子に、東陽テクニカ製ソースメジャーユニット2400を用いて、直流定電圧を印加し、発光させ、その輝度をトプコン社の輝度計BM−8、発光波長とCIE色度座標を浜松ホトニクス社製スペクトルアナライザーPMA−11を用いて測定した。その結果、CIE色度が(x,y)=(0.324,0.557)、発光ピーク波長が530nmの緑色発光が得られ、最高輝度は1300cd/m2、外部量子効率は0.22%であった。 Using the source measure unit 2400 manufactured by Toyo Technica, the obtained organic EL element was applied with a constant DC voltage to emit light, and the luminance was measured by Topcon's luminance meter BM-8. The emission wavelength and CIE chromaticity coordinates were expressed in Hamamatsu. Measurement was performed using a spectrum analyzer PMA-11 manufactured by Photonics. As a result, green light emission having a CIE chromaticity of (x, y) = (0.324, 0.557), an emission peak wavelength of 530 nm, a maximum luminance of 1300 cd / m 2 , and an external quantum efficiency of 0.22 is obtained. %Met.
(比較例2)
Alqに代えて下記化合物CBPを用いたいこと以外は上記比較例1と同様にして、比較例2の有機EL素子を作製した。比較例1と同様にして、比較例2の有機EL素子を評価した結果、CIE色度が(x,y)=(0.276,0.630)、発光ピーク波長が516nmの緑色発光が得られ、最高輝度は27000cd/m2、外部量子効率は12.7%であった。
(Comparative Example 2)
An organic EL device of Comparative Example 2 was produced in the same manner as Comparative Example 1 except that the following compound CBP was used instead of Alq. As a result of evaluating the organic EL device of Comparative Example 2 in the same manner as in Comparative Example 1, green light emission with CIE chromaticity of (x, y) = (0.276, 0.630) and emission peak wavelength of 516 nm was obtained. The maximum luminance was 27000 cd / m 2 and the external quantum efficiency was 12.7%.
(比較例3)
Alqに代えて下記化合物H−4(特開2002−305083号公報の段落番号[0034]に記載の化合物(H−4))を用いたいこと以外は、上記比較例1と同様にして、比較例3の有機EL素子を作製した。比較例1と同様にして、比較例3の有機EL素子を評価した結果、CIE色度が(x,y)=(0.286,0.624)、発光ピーク波長が522nmの緑色発光が得られ、最高輝度は21000cd/m2、外部量子効率は11.4%であった。
(Comparative Example 3)
In the same manner as in Comparative Example 1 except that the following compound H-4 (compound (H-4) described in paragraph No. [0034] of JP-A-2002-305083) is used instead of Alq, The organic EL element of Example 3 was produced. As a result of evaluating the organic EL device of Comparative Example 3 in the same manner as in Comparative Example 1, green light emission with CIE chromaticity of (x, y) = (0.286, 0.624) and emission peak wavelength of 522 nm was obtained. The maximum luminance was 21000 cd / m 2 and the external quantum efficiency was 11.4%.
Alqに代えて例示化合物1を用いたこと以外は上記比較例1と同様にして、実施例1の有機EL素子を作製した。比較例1と同様にして、実施例1の有機EL素子を評価した結果、CIE色度が(x,y)=(0.320,0.615)、発光ピーク波長が524nmの緑色発光が得られ、最高輝度は83000cd/m2、外部量子効率は19.7%であった。 An organic EL device of Example 1 was produced in the same manner as Comparative Example 1 except that Exemplified Compound 1 was used instead of Alq. As a result of evaluating the organic EL device of Example 1 in the same manner as in Comparative Example 1, green light emission having a CIE chromaticity of (x, y) = (0.320, 0.615) and an emission peak wavelength of 524 nm was obtained. The maximum luminance was 83000 cd / m 2 and the external quantum efficiency was 19.7%.
Alqに代えて例示化合物2を用いたこと以外は上記比較例1と同様にして、実施例2の有機EL素子を作製した。比較例1と同様にして、実施例2の有機EL素子を評価した結果、CIE色度が(x,y)=(0.300,0.621)、発光ピーク波長が517nmの緑色発光が得られ、最高輝度は53000cd/m2、外部量子効率は23.1%であった。 An organic EL device of Example 2 was produced in the same manner as Comparative Example 1 except that Example Compound 2 was used instead of Alq. As a result of evaluating the organic EL device of Example 2 in the same manner as in Comparative Example 1, green light emission with CIE chromaticity of (x, y) = (0.300, 0.621) and emission peak wavelength of 517 nm was obtained. The maximum luminance was 53000 cd / m 2 and the external quantum efficiency was 23.1%.
上記実施例1、2及び比較例1乃至3の結果から、りん光発光性有機EL素子において、本発明の金属錯体をホスト材料として用いると、従来の有機EL素子より優れた輝度、効率を有する有機EL素子が得られることがわかる。 From the results of Examples 1 and 2 and Comparative Examples 1 to 3, in the phosphorescent organic EL device, when the metal complex of the present invention is used as a host material, the luminance and efficiency are superior to those of conventional organic EL devices. It turns out that an organic EL element is obtained.
Alqに代えて例示化合物4を用いたこと以外は上記比較例1と同様にして、実施例3の有機EL素子を作製した。比較例1と同様にして、実施例3の有機EL素子を評価した結果、CIE色度が(x,y)=(0.300,0.631)、発光ピーク波長が517nmの緑色発光が得られ、最高輝度は64000cd/m2、外部量子効率は23.9%であった。 An organic EL device of Example 3 was produced in the same manner as in Comparative Example 1 except that Exemplified Compound 4 was used instead of Alq. As a result of evaluating the organic EL device of Example 3 in the same manner as in Comparative Example 1, green light emission with CIE chromaticity of (x, y) = (0.300, 0.631) and emission peak wavelength of 517 nm was obtained. The maximum luminance was 64000 cd / m 2 and the external quantum efficiency was 23.9%.
Alqに代えて例示化合物21を用いたこと以外は上記比較例1と同様にして、実施例4の有機EL素子を作製した。比較例1と同様にして、実施例4の有機EL素子を評価した結果、CIE色度が(x,y)=(0.299,0.619)、発光ピーク波長が518nmの緑色発光が得られ、最高輝度は46000cd/m2、外部量子効率は18.8%であった。 An organic EL device of Example 4 was produced in the same manner as Comparative Example 1 except that Exemplified Compound 21 was used in place of Alq. As a result of evaluating the organic EL device of Example 4 in the same manner as in Comparative Example 1, green light emission having a CIE chromaticity of (x, y) = (0.299, 0.619) and an emission peak wavelength of 518 nm was obtained. The maximum luminance was 46000 cd / m 2 and the external quantum efficiency was 18.8%.
洗浄したITO基板を蒸着装置に入れ、TPD(N,N’−ジフェニル−N,N’−ジ(m−トリル)ベンジジン)を50nm蒸着し、この上に例示化合物1、例示化合物2及びIr(ppy)3を9:9:1の質量比で36nm蒸着し、さらにこの上に化合物aを36nm蒸着した。得られた有機薄膜上にパターニングしたマスク(発光面積が4mm×5mmとなる)を設置し、フッ化リチウムを3nm蒸着した後アルミニウムを60nm蒸着して実施例5の有機EL素子を作製した。比較例1と同様にして、実施例5の有機EL素子を評価した結果、CIE色度が(x,y)=(0.304,0.630)、発光ピーク波長が516nmの緑色発光が得られ、最高輝度は72000cd/m2、外部量子効率は20.5%であった。 The cleaned ITO substrate is put in a vapor deposition apparatus, and TPD (N, N′-diphenyl-N, N′-di (m-tolyl) benzidine) is deposited to a thickness of 50 nm. On this, exemplary compound 1, exemplary compound 2 and Ir ( ppy) 3 was evaporated at a mass ratio of 9: 9: 1 to 36 nm, and further compound a was evaporated to 36 nm thereon. A patterned mask (with a light emitting area of 4 mm × 5 mm) was placed on the obtained organic thin film, lithium fluoride was deposited to 3 nm, and then aluminum was deposited to 60 nm to produce an organic EL device of Example 5. As a result of evaluating the organic EL device of Example 5 in the same manner as in Comparative Example 1, green light emission with a CIE chromaticity of (x, y) = (0.304, 0.630) and an emission peak wavelength of 516 nm was obtained. The maximum luminance was 72000 cd / m 2 and the external quantum efficiency was 20.5%.
上記実施例1〜5及び比較例1乃至3の結果から、りん光発光性有機EL素子において、本発明の金属錯体をホスト材料として用いると、従来の有機EL素子より優れた輝度、効率を有する有機EL素子が得られることがわかる。 From the results of Examples 1 to 5 and Comparative Examples 1 to 3, in the phosphorescent organic EL device, when the metal complex of the present invention is used as a host material, the luminance and efficiency are superior to those of conventional organic EL devices. It turns out that an organic EL element is obtained.
上記実施例1〜5及び比較例2の有機EL素子において、初期輝度を合わせた輝度半減時間を測定したところ、比較例2の有機EL素子が8時間であったのに対し、実施例1の有機EL素子は85時間、実施例2の有機EL素子は79時間、実施例3の素子は111時間、実施例4の素子は59時間、実施例5の素子は144時間であった。 In the organic EL elements of Examples 1 to 5 and Comparative Example 2, when the luminance half time combined with the initial luminance was measured, the organic EL element of Comparative Example 2 was 8 hours. The organic EL device was 85 hours, the organic EL device of Example 2 was 79 hours, the device of Example 3 was 111 hours, the device of Example 4 was 59 hours, and the device of Example 5 was 144 hours.
上記実施例6の結果から、りん光発光性有機EL素子において、本発明の金属錯体材料を用いると、駆動耐久性にも非常に優れた有機EL素子が得られることがわかる。 From the results of Example 6 above, it can be seen that when the metal complex material of the present invention is used in the phosphorescent organic EL device, an organic EL device having excellent driving durability can be obtained.
洗浄したITO基板上に、Baytron P(PEDOT−PSS(ポリエチレンジオキシチオフェン−ポリスチレンスルホン酸ドープ体)分散液/バイエル社製)をスピンコートにより塗布した後、100℃で1時間真空加熱乾燥し、ホール注入層(膜厚約50nm)を敷設した。この上に、ポリカーボネート樹脂Zを10mg、例示化合物1を25mg、Ir(ppy)3を3mgをジクロロエタン3mLに溶解した溶液をスピンコートにより塗布した(毎分2000回転、30秒)。有機層の総膜厚は150nmであった。比較例1と同様に陰極を蒸着し、実施例7の有機EL素子を作製した。比較例1と同様にして実施例7の有機EL素子を評価した結果、CIE色度が(x,y)=(0.304,0.630)、発光ピーク波長が516nmの緑色発光が得られ、最高輝度は23500cd/m2、外部量子効率は14.9%であった。 On the cleaned ITO substrate, Baytron P (PEDOT-PSS (polyethylenedioxythiophene-polystyrenesulfonic acid dope) dispersion / manufactured by Bayer) was applied by spin coating, and then vacuum-heated and dried at 100 ° C. for 1 hour. A hole injection layer (film thickness of about 50 nm) was laid. On top of this, 10 mg of polycarbonate resin Z, 25 mg of Exemplified Compound 1 and 3 mg of Ir (ppy) 3 were dissolved in 3 mL of dichloroethane by spin coating (2000 rpm for 30 seconds). The total thickness of the organic layer was 150 nm. A cathode was vapor-deposited in the same manner as in Comparative Example 1 to produce an organic EL device of Example 7. As a result of evaluating the organic EL device of Example 7 in the same manner as in Comparative Example 1, green light emission with CIE chromaticity of (x, y) = (0.304, 0.630) and emission peak wavelength of 516 nm was obtained. The maximum luminance was 23500 cd / m 2 and the external quantum efficiency was 14.9%.
実施例7の結果より、本発明の金属錯体をホスト材料として用いたりん光発光性有機EL素子は、塗布プロセスにより作製した素子でも、高輝度・高効率の発光素子が得られることがわかった。 From the result of Example 7, it was found that the phosphorescent organic EL device using the metal complex of the present invention as a host material can obtain a light-emitting device with high luminance and high efficiency even when the device is manufactured by a coating process. .
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