JP4626303B2 - Recharge jig for polycrystalline raw material and method for recharging polycrystalline raw material - Google Patents

Description

  The present invention relates to a method for melting a rod-like (rod-like) polycrystalline material in a crucible having a raw material melt for a single crystal production apparatus by the Czochralski method, and to recharge the polycrystalline material, and a recharging jig used therefor About.

  In recent years, with the spread of semiconductor integrated circuits worldwide and the increasing demand thereof, high-quality silicon single crystal wafers used as substrates for semiconductor integrated circuits are required in large quantities and stably. It came. A silicon single crystal wafer is manufactured by pulling up a silicon single crystal by, for example, the Czochralski method (CZ method). In the CZ method, first, a raw material polycrystalline silicon (polycrystalline raw material) is filled in a quartz crucible, the quartz crucible is held by a graphite crucible, and heated by a heater on the outer periphery thereof to melt the polycrystalline raw material. Next, the seed crystal is immersed in the raw material melt to form a narrowed portion or to be dislocation-free by a dislocation-free seeding method, and then a single crystal having a desired diameter and crystal quality is grown.

  In this CZ method, in order to reduce the manufacturing cost of the silicon single crystal, a granular polycrystalline raw material is provided in the crucible by providing a supply pipe so as to supply the reduced amount of the silicon melt in the crucible accompanying the pulling of the silicon single crystal. An apparatus for supplying (granular raw material) according to the amount of reduction of the raw material melt is known. One of these apparatuses is a so-called continuous charge (CCCZ) method in which a single crystal is grown while continuously supplying a granular raw material to a raw material melt surface in a crucible during silicon single crystal growth. Can significantly improve the yield of a single crystal and greatly reduce its manufacturing cost. Note that the additional filling of the polycrystalline material is referred to as recharging.

  However, in this method, it is necessary to slowly supply a small amount of granular raw material in the same amount as the silicon single crystal growth amount (usually about 0.3 g / second to 1.0 g / second). In many cases, the raw material melt jumps at the time of supply or a problem such as occurrence of molten metal surface vibration occurs. For this reason, when the silicon single crystal is dislocated during the growth of the silicon single crystal, it is often impossible to continue the growth of the silicon single crystal and the manufacturing cost cannot be reduced. In order to prevent this, the supply rate is suppressed to some extent by narrowing the tip of the supply pipe. This has the disadvantage that the supply speed is limited and the supply time of the granular raw material becomes too long.

  In order to solve this problem, a double-structure crucible may be used to prevent the growth of the silicon single crystal from being hindered by continuous supply of granular raw materials, but the interface of the silicon single crystal becomes the inner crucible. Since they are close, there is a drawback that the oxygen cannot be reduced. Further, the structure becomes complicated, the cost of the crucible increases, and the operability deteriorates.

  Further, as a conventional method of adding raw materials in a batch system, a multi-pooling (or recharge pulling (RCCZ) method is known (see Non-Patent Document 1). This method has a dopant concentration in a range satisfying a resistance standard. After pulling up the silicon single crystal with a rod, the rod-shaped polycrystalline raw material (hereinafter referred to as rod-shaped polycrystalline raw material) is suspended to the raw material melt remaining in the quartz crucible. While immersing, gradually melting and additional filling, repeating the pulling of the same silicon single crystal again, manufacturing a plurality of silicon single crystals from a quartz crucible that can only be used once, improving the manufacturing yield, It is intended to reduce the cost of the quartz crucible.

  As a specific method, Patent Document 1 discloses a recharging device for suspending a rod-shaped polycrystalline material. However, in the method of suspending the rod-shaped polycrystalline material in this way, if the rod-shaped polycrystalline material has microcracks or the like, the rod-shaped polycrystalline material is broken and dropped from the position where the microcrack was generated during melting of the rod-shaped polycrystalline material. Then there was such a problem. Such dropping of the rod-shaped polycrystalline raw material not only has the problem of inhibiting single crystallization due to jumping of the raw material melting, but also has a risk of damaging the quartz crucible and causing hot water leakage.

  On the other hand, as the recharging method, a method is disclosed in which after the silicon single crystal is pulled up, the surface of the silicon melt remaining in the crucible is solidified once, and then the raw material is recharged into the crucible by a recharge tube on the surface. (See Patent Document 2). In this method, when the surface of the raw material melt is solidified, depending on the progress of solidification, the quartz crucible is damaged and the quartz on the inner wall is peeled off, and the peeled quartz scraps adhere to the growing silicon single crystal, and silicon There has been a problem that dislocation occurs in the single crystal and polycrystallizes. Another problem is that recharging takes time because the surface of the raw material melt is once solidified and then melted.

Japanese Examined Patent Publication No. 6-31193 International Publication No. WO2002 / 068732 Pamphlet Fumio Shimura, Semiconductor Silicon Crystal Technology, p178-p179, 1989

  Therefore, the present invention has been made in view of the above problems, and an object of the present invention is to allow additional supply (recharge) of a polycrystalline raw material to be performed safely and damage the quartz crucible during recharge melting. It is an object to provide a polycrystalline raw material recharging jig and a polycrystalline raw material recharging method that can be melted in a short time without increasing the yield, and can improve the productivity and yield of silicon single crystals.

In order to achieve the above object, according to the present invention, there is provided a recharge jig used when melting a rod-shaped polycrystalline material in the production of a single crystal by the Czochralski method, and at least the rod-shaped polycrystalline material , A support connected to the top of the bottom, and a suspension member attached to the support. The rod-shaped polycrystalline raw material is loaded and suspended by the suspension member. The polycrystalline material is introduced into a single crystal manufacturing apparatus and melts the rod-shaped polycrystalline raw material while being immersed together with the rod-shaped polycrystalline raw material in a raw material melt in a quartz crucible. raw materials recharge jig of Ru are provided.

  Thus, a recharging jig comprising the bottom body, the support body and the suspension member, which is loaded with the rod-shaped polycrystalline raw material and suspended by the suspension member into the single crystal manufacturing apparatus. As long as the rod-shaped polycrystalline material is melted while being introduced and immersed in the raw material melt in the quartz crucible with the rod-shaped polycrystalline material, the rod-shaped polycrystalline material has a micro crack. Moreover, since it can melt | melt while supporting the lower end part of a rod-shaped polycrystalline raw material, it can prevent that a rod-shaped polycrystalline raw material falls during melting. Further, the polycrystalline raw material can be safely recharged. Further, there is no fear that the raw material melting jumps due to the dropping of the rod-shaped polycrystalline raw material during the recharge melting and the single crystallization is hindered, or the quartz crucible is broken and liquid leakage occurs. Furthermore, since the rod-shaped polycrystalline raw material is melted while being immersed in the raw material melt, the raw material melt is not excessively solidified during recharge melting, so that the quartz crucible is not damaged and peeled off from the quartz crucible. There is no concern that the quartz waste that has been deposited adheres to the growing silicon single crystal, causing dislocations in the silicon single crystal and polycrystallizing. Further, since the melt is not solidified, the rod-shaped polycrystalline material can be quickly melted and recharged in a short time.

At this time, the support body includes at least a plurality of pillars extending in the vertical direction at the upper part of the bottom bodies to be coupled, and the plurality of pillars are connected to each other and surround the rod-shaped polycrystalline raw material to be loaded. it is not preferable is made of a one or more support members arranged.
Thereby, it can support so that a rod-shaped polycrystalline raw material may not fall during recharge melting. At this time, it is more preferable that the plurality of support columns be 3 or more in order to surely prevent the rod-shaped polycrystalline material from falling during melting, and 6 or less in order to reduce the manufacturing cost.

Further, the recharge jig, it is not preferable is one having a 10~40mm inner diameter larger than the diameter of the rod-like polycrystalline raw material the loading.
As described above, the recharge jig has an inner diameter that is 10 to 40 mm larger than the diameter of the rod-shaped polycrystalline material to be loaded, and thus loses balance when the recharge jig loaded with the rod-shaped polycrystalline material is lowered. Even if the rod-shaped polycrystalline material hits the support of the recharge jig, the distance between the inner diameter of the rod-shaped polycrystalline material and the recharge jig is as small as 40 mm or less, so the impact can be kept small and damage to the recharge jig can be prevented. can do. In addition, since the space | interval of the internal diameter of a rod-shaped polycrystalline raw material and a recharge jig | tool is 10 mm or more, it is possible to load the rod-shaped polycrystalline raw material to the recharge jig smoothly.

Further, the recharge jig is not preferable to be made of quartz.
As described above, if the recharge jig is made of quartz, the purity can be kept high. Therefore, even if the recharge jig is immersed in the raw material melt together with the rod-shaped polycrystalline raw material, impurity contamination in the raw material melt can be suppressed.

Further, the bottom body, it is not preferable are those removable from the support.
Since the portion of the recharge jig that is immersed in the raw material melt is consumed, if the structure is removable from the support as the portion of the recharge jig that is immersed in the raw material melt, only the consumable bottom body is consumed. The replacement of the consumable part is completed, and the cost of the recharge jig can be reduced.

Furthermore, according to the present invention, the recharging using jigs, polycrystalline recharge process of the polycrystalline raw material and performing recharge raw material Ru is provided.
As described above, according to the present invention, there is provided a polycrystalline raw material recharging method for recharging a polycrystalline raw material using the recharging jig, whereby the rod-shaped polycrystalline raw material can be recharged safely and in a short time. The quartz crucible is not damaged during recharge melting.

Further, according to the present invention, there is provided a recharging method for melting a rod-shaped polycrystalline material in the production of a single crystal by the Czochralski method, comprising at least a bottom body supporting the rod-shaped polycrystalline material, the bottom Using a recharge jig comprising a support connected to the upper part of the body and a suspension member attached to the support, the rod-shaped polycrystalline raw material is loaded into the recharge jig and suspended by the suspension member. The rod-shaped polycrystalline raw material is melted while being introduced into a single crystal manufacturing apparatus and immersing at least the bottom of the recharge jig together with the rod-shaped polycrystalline raw material in a raw material melt in a quartz crucible. recharge method of polycrystalline material which is Ru is provided.

  Thereby, the rod-shaped polycrystalline material can be recharged safely and in a short time, and the quartz crucible is not damaged during recharge melting. Furthermore, if only the bottom body is immersed in the raw material melt in the recharge jig, the consumable part can be replaced only by replacing the consumed bottom body, and the cost of the recharge jig can be reduced.

At this time, the rod-like polycrystalline raw material loading, have preferably be those in diameter 10~40mm smaller than the inner diameter of the support.
As described above, the rod-shaped polycrystalline material to be loaded loses balance when the recharge jig loaded with the rod-shaped polycrystalline material is lowered by using a rod-shaped polycrystalline material whose diameter is smaller than 40 mm from the inner diameter of the support. Even if the rod-shaped polycrystalline material hits the support of the recharge jig, the distance between the inner diameter of the rod-shaped polycrystalline material and the recharge jig is as small as 40 mm or less, so the impact can be kept small and damage to the recharge jig can be prevented. can do. In addition, since the space | interval of the internal diameter of a rod-shaped polycrystalline raw material and a recharge jig | tool is 10 mm or more, it is possible to load the rod-shaped polycrystalline raw material to the recharge jig smoothly.

  According to the present invention, the rod-shaped polycrystalline material can be recharged safely and in a short time, and the productivity and yield of silicon single crystals can be improved without damaging the quartz crucible during recharge melting. It has become possible.

  In recent years, the multi-pooling method has been used to obtain a large amount of silicon single crystals of the same quality in order to meet the demands for high productivity and high yield of silicon single crystals accompanying an increase in demand for silicon single crystal wafers.

  In the multi-pooling method, conventionally, recharging of the polycrystalline raw material is sometimes performed by hanging the rod-shaped polycrystalline raw material with a recharging device. However, in such a method, when the rod-shaped polycrystalline material has microcracks or the like, there is a risk that the rod-shaped polycrystalline material falls from the position where the microcracks are generated during melting of the rod-shaped polycrystalline material.

Therefore, the present inventors have made the present invention by conducting intensive studies and experiments in order to prevent such a risk of dropping and to safely recharge the rod-shaped polycrystalline material.
That is, the present inventors are a recharging method used when melting a rod-shaped polycrystalline material in the production of a single crystal by the Czochralski method, and at least a bottom body that supports the rod-shaped polycrystalline material and A recharge jig comprising a support coupled to the upper part of the bottom body and a suspension member attached to the support, the rod-shaped polycrystalline material is loaded into the recharge jig, and the suspension member The rod-shaped polycrystalline raw material is melted while being suspended and introduced into the single crystal manufacturing apparatus, and immersing at least the bottom of the recharge jig together with the rod-shaped polycrystalline raw material in the raw material melt in the quartz crucible. Therefore, the rod-shaped polycrystalline material can be melted while supporting the lower end portion of the rod-shaped polycrystalline material. It is possible to prevent the risk of falling of the rod-like polycrystalline raw material in the chromatography di melt was found that the recharge of the polycrystalline material can be performed safely and quickly.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings, but the present invention is not limited thereto.
Here, FIG. 1 is a perspective view showing an example of a polycrystalline raw material recharge jig according to the present invention, in which the bottom body 2 is removable from the support body 1. FIG. 2 is a cross-sectional view showing a state in which the recharge jig 29 according to the present invention is filled with the rod-shaped polycrystalline raw material 30 and melted in the single crystal manufacturing apparatus 21.

  A polycrystalline material recharge jig 29 according to the present invention is a recharge jig 29 used when melting a rod-shaped polycrystalline material 30 in the production of a single crystal by the Czochralski method, and is at least a rod-shaped polycrystalline material. 30 is composed of a bottom body 2 that supports 30, a support body 1 that is connected to the top of the bottom body 2, and a suspension member 3 that is attached to the support body 1. The rod-shaped polycrystalline raw material 30 is melted while being suspended in the single crystal manufacturing apparatus 21 by being suspended by the suspension member 3 and immersed in the raw material melt 25 in the quartz crucible 23 together with the rod-shaped polycrystalline raw material 30. Is.

  Here, the bottom body 2 has a structure capable of stably fixing the rod-shaped polycrystalline raw material 30 so as not to fall down. For example, a plurality of support bars 8 are provided as shown in FIG. The structure of the bottom body 2 may be any structure such as a cross shape, a slit shape, or a mesh shape as long as the rod-shaped polycrystalline raw material 30 can be stably fixed so as not to fall down. In addition, the bottom body 2 may be an integral structure that cannot be removed by being connected to the support body 1. However, in order to cope with the consumption of the portion of the recharge jig 29 that is immersed in the raw material melt 25, FIG. It is preferable that the structure be removable from the support 1 as described above. Thereby, only the worn bottom body 2 can be replaced, which is preferable in terms of the manufacturing cost of the recharge jig 29. In this case, the bottom body connection part 7 for connecting with the support body 1 is provided.

  The support body 1 is connected to the upper part of the bottom body 2. When the bottom body 2 is structured to be removable from the support body 1, the support body 1 has a support body connection portion 6 at the lower end, and the bottom body connection portion. The convex portion 7 is engaged with the groove of the support connecting portion 6 to be connected to the bottom body 2. Further, the support 1 connects at least the plurality of support columns 4 extending vertically in the upper part of the bottom body 2 to be connected to each other, and surrounds the rod-shaped polycrystalline raw material 30 to be loaded. The rod-shaped polycrystalline raw material 30 is stably placed in the recharge jig 29 during the melting of the rod-shaped polycrystalline raw material 30. Can be held.

  Furthermore, it is more preferable that the plurality of support columns 4 is three or more, and it is more preferable that the number is six or less from the viewpoint of manufacturing cost. Moreover, if the length of the support | pillar 4 is made into the length comparable as the rod-shaped polycrystalline raw material 30 with which it fills, the rod-shaped polycrystalline raw material 30 can be stably accommodated in the recharge jig 29.

  Furthermore, it is preferable that the interval between the columns 4 is smaller than the diameter of the rod-shaped polycrystalline raw material 30, thereby ensuring that the rod-shaped polycrystalline raw material 30 is held in the recharge jig 29 throughout the entire melting process. Can do. In addition, each column 4 has a diameter of 7 to 15 mm in the case of a cylindrical shape, and a diameter of 70 to 160 mm as a rod-shaped polycrystalline raw material 30 to be loaded if one side is 6 to 25 mm in the case of a prismatic shape. It has a strength capable of reliably holding a large one having a length of 200 to 1100 mm and a weight of 5 to 50 kg in the recharge jig 29 during melting.

  Furthermore, the supporting member 5 is at least one, connects the plurality of support columns 4 to each other, and is provided so as to surround the rod-shaped polycrystalline raw material 30 to be loaded. This is preferable because the rod-shaped polycrystalline raw material 30 can be stably supported during recharge melting. For example, the support member 5 is formed in an annular shape as shown in FIG. 1, and one is preferably provided at each of the upper end portion and the center portion of the support 1, but more support members 5 may be provided. Alternatively, a plurality of rod-shaped members may be used as the support member 5 and a plurality of support columns 4 may be connected in a ladder shape.

  The support 1 is not limited to the bowl-shaped one as described above, and may be a cylindrical one as long as it can stably support the rod-shaped polycrystalline raw material 30 during recharge melting and can contact the melt. However, it may be one in which a side wall is provided with a through hole. Further, the support 1 is not limited to an annular shape in the horizontal cross section, and may be polygonal, as long as it stably supports the rod-shaped polycrystalline raw material 30 during recharge melting. The shape of the horizontal cross section may be different depending on the position in the vertical direction.

  The suspension member 3 can be used to suspend and introduce the recharge device 29 loaded with the rod-shaped polycrystalline raw material 30 into the single crystal production device 21 with a wire or a shaft. It is preferable to have a connected structure, for example, an integrated structure connected to the support member 5 as shown in FIG.

  As described above, the recharge jig 29 according to the present invention includes the bottom body 2, the support body 1, and the suspension member 3 as described above. If the inner diameter of the recharge jig 29 is 10-40 mm larger than the diameter of the rod-shaped polycrystalline raw material 30 to be loaded, the rod-shaped polycrystalline raw material 30 loses its balance due to buoyancy during melting, and the recharge jig 29 is supported. Even if it comes into contact with the body 1, the distance between the inner diameters of the rod-shaped polycrystalline raw material 30 and the recharge jig 29 is as small as 40 mm or less, so that the impact can be kept small and damage to the recharge jig 29 can be prevented. In addition, the rod-shaped polycrystalline raw material 30 can be smoothly loaded into the recharging jig 29 by setting the interval between the inner diameters of the rod-shaped polycrystalline raw material 30 and the recharging jig 29 to 10 mm or more.

  In addition, it is preferable that the recharge jig 29 is made of quartz, and thereby the purity can be kept high. Therefore, even if the recharge jig 29 is immersed in the raw material melt 25 together with the rod-shaped polycrystalline raw material 30, impurity contamination can be suppressed.

The polycrystalline material recharging jig 29 according to the present invention has the above-described configuration. Hereinafter, a polycrystalline raw material recharging method according to the present invention using the jig will be described.
As shown in FIG. 2, a quartz crucible 23 containing a raw material melt 25 and a graphite crucible 24 are disposed outside the main chamber 22 of the single crystal manufacturing apparatus 21. The graphite crucible 24 is supported by a crucible support shaft 26 that can move up and down and rotate. A heater 28 is disposed on the outer periphery of the graphite crucible 24 to heat the raw material melt 25. A heat insulating material 27 is arranged on the outer periphery of the heater 28 so that the main chamber 22 does not receive radiant heat from the heater 28 directly.

  After melting the polycrystalline raw material of the initial charge, the seed crystal is brought into contact with the raw material melt 25, and after seed drawing, the diameter is expanded to a predetermined diameter, and then the straight body portion is formed at a predetermined pulling speed. When the straight body reaches a desired length, the diameter is gradually reduced, and the single crystal is separated from the raw material melt 25.

  After the single crystal is taken out from the pulling device, the recharge jig 29 according to the present invention is loaded with the rod-shaped polycrystalline raw material 30, and the suspension wire 31 is connected to the suspension member 3 and suspended to suspend the single crystal production device. 21 is introduced and the wire 34 is lowered, so that at least the bottom body 2 is immersed in the raw material melt 25 by about 20 mm to 50 mm.

  At this time, one end of the suspension wire 31 is fixed to the suspension member 3 at the upper end of the recharge jig 29, and the opposite side of the suspension wire 31 is fixed to the suspension jig 32. It has become. The hanging jig 32 is locked by a seed chuck 33 attached to the tip of the wire 34, and the recharging jig 29 can be moved up and down by moving the wire 34 up and down. Note that the method of suspending the recharge jig 29 with the suspension member 3 and introducing it into the single crystal manufacturing apparatus 21 is not limited to the method of suspending with the wire 34, and is a method of suspending by another means such as a shaft. Also good.

  Next, while at least the bottom body 2 of the recharge jig 29 is immersed in the raw material melt 25 together with the rod-shaped polycrystalline material 30 by about 20 mm to 50 mm, the rod-shaped polycrystalline material 30 is heated from the lower end by heating with the heater 28. Melt. Here, since the lower end of the rod-shaped polycrystalline raw material 30 is always immersed in the raw material melt 25, the rod-shaped polycrystalline raw material 30 gradually sinks in the recharge jig 29 due to its own weight as the melting proceeds.

  Moreover, since the depth of the raw material melt 25 gradually increases with the progress of melting, the recharge jig 29 and the rod-shaped polycrystalline raw material 30 are immersed so that the immersion depth is about 20 mm to 50 mm. It is preferable to lower the quartz crucible 23 or raise the recharge jig 29 in accordance with the progress of melting so that only the bottom body 2 is immersed in the raw material melt 25. Further, at this time, by adjusting the heat generation center of the heater 28 to a position near the surface of the raw material melt 25, smooth melting is possible.

  After the melting of the rod-shaped polycrystalline raw material 30 is completed, the recharge jig 29 is raised and separated from the melt, then taken out from the single crystal manufacturing apparatus 21 and the next single crystal is pulled up. Thus, according to the present invention, the polycrystalline raw material can be safely recharged, and the melt surface is not solidified, so that the quartz crucible 23 is not damaged during recharge melting and can be melted in a short time. Thus, the productivity and yield of silicon single crystals can be improved.

EXAMPLES Hereinafter, although an Example and a comparative example are shown and this invention is demonstrated more concretely, this invention is not limited to these.
Example 1
As shown in FIG. 1, as a recharge jig 29 used for melting the rod-shaped polycrystalline raw material 30, five cylindrical support rods 8 having a diameter of 15 mm are arranged on the portion directly supporting the rod-shaped polycrystalline raw material 30. , A bottom body 2 having a bottom body coupling portion 7 for coupling to the support body 1, a support body 1 coupled to the upper portion of the bottom body 2 via a support body coupling portion 6, and three locations on the top of the support body 1 A recharge jig 29 made of quartz and having an inner diameter of 190 mm made of the attached suspension member 3 was used. Here, the support 1 is connected to the four pillars 4 having a columnar shape of 15 mm in diameter and 1200 mm in length extending in the vertical direction on the upper part of the bottom body 2 to be coupled to the four pillars 4. Two support members 5 were arranged in an annular shape at the center and upper end of the column 4 so as to surround the rod-shaped polycrystalline raw material 30 to be loaded.

  The recharge jig 29 was filled with a rod-shaped polycrystalline raw material 30 having a diameter of 150 mm, a length of 1000 mm, and a weight of 41 kg, suspended by the suspension member 3 and introduced into the single crystal manufacturing apparatus 21. While immersing the bottom body 2 of the recharge jig 29 together with the lower end of the rod-shaped polycrystalline material 30 about 40 mm from the surface of a 29 kg raw material melt 25 accommodated in a quartz crucible 23 having a diameter of 550 mm (22 inches), the rod The whole amount of the polycrystalline material 30 was melted. As a result, the melting time was about 1.8 hours. During melting, the crucible was lowered in accordance with the rise of the melt surface in the crucible, and the melt surface position was kept constant.

  In the present invention, since the rod-shaped polycrystalline raw material 30 is always immersed in the raw material melt 25, the rod-shaped polycrystalline raw material 30 is separated from the surface of the raw material melt 25 as in a comparative example described later. After that, the conventionally required operation of immersing the rod-shaped polycrystalline material 30 was eliminated, and the rod-shaped polycrystalline material 30 could be melted in a shorter time.

  The consumption amount of the diameter in one recharge melting of the support rod 8 in which the bottom body 2 of the recharge jig 29 directly supports the rod-shaped polycrystalline raw material 30 was about 0.1 mm. This was repeated 15 times and the total diameter was consumed by 1.5 mm. When the diameter reached 13.5 mm, the bottom body 2 was replaced.

  Although this melting method was repeated 150 times, there was no trouble that the rod-shaped polycrystalline raw material 30 dropped during recharge melting. Moreover, the crystal quality of the produced silicon single crystal was equivalent to the conventional one. As described above, according to the present invention, the polycrystalline raw material can be safely recharged, and the productivity and yield of the silicon single crystal can be improved without damaging the quartz crucible 23 during recharge melting. Became possible.

(Comparative Example 1)
A rod-shaped polycrystalline raw material 30 similar to that used in Example 1 having a diameter of 150 mm, a length of 1000 mm, and a weight of 41 kg (used with a crack-free material before being used) is used in a conventional recharging device (Patent Document) 1)), grooves having a width of about 5 to 10 mm and a depth of about 5 mm to 10 mm were provided in two places.

  Then, the rod-shaped polycrystalline raw material 30 was immersed by about 40 mm from the surface of 29 kg of the raw material melt 25 accommodated in the quartz crucible 23 having a diameter of 550 mm (22 inches). Thereafter, when the rod-shaped polycrystalline raw material 30 is separated from the surface of the raw material melt, the rod-shaped polycrystalline raw material 30 is completely replenished by repeating the operation of immersing the rod-shaped polycrystalline raw material 30 from the surface of the raw material melt 25 by about 40 mm. Melted.

  As a result of repeating this 150 times, five crystal drops occurred, and it was speculated that all of them were caused by expansion of minute cracks in the rod-shaped polycrystalline raw material 30 by heating during recharge melting. As described above, the recharging of the polycrystalline raw material by the conventional method is dangerous and troublesome, and not only the problem of inhibiting the single crystallization by the jumping of the raw material melt 25 due to the dropping of the rod-shaped polycrystalline raw material 30, There was also a risk of damaging the quartz crucible 23 and causing hot water leakage.

  In addition, in the method of the comparative example, it is necessary to select in advance those without cracks, and the usable material rods are limited. In addition, the presence or absence of cracks cannot be determined substantially accurately. On the other hand, in the present invention, any rod-shaped polycrystalline material can be used regardless of the presence or absence of cracks, so there is no need to select the material and the practical value is extremely high.

  The present invention is not limited to the above embodiment. The above-described embodiment is merely an example, and the present invention has substantially the same configuration as the technical idea described in the claims of the present invention, and any device that exhibits the same function and effect is the present invention. It is included in the technical scope of the invention.

It is a perspective view which shows an example of the recharge jig of the polycrystalline raw material which concerns on this invention, and the bottom body can be removed from a support body. In a single crystal manufacturing apparatus, it is sectional drawing which shows a mode that the recharge jig which concerns on this invention is filled with the rod-shaped polycrystal raw material, and is fuse | melted.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Support body, 2 ... Bottom body, 3 ... Hanging member, 4 ... Support | pillar, 5 ... Support member,
6 ... support body connection part, 7 ... bottom body connection part, 8 ... support rod,
21 ... Single crystal manufacturing equipment, 22 ... Main chamber, 23 ... Quartz crucible,
24 ... graphite crucible, 25 ... raw material melt, 26 ... crucible support shaft, 27 ... heat insulating material,
28 ... heater, 29 ... recharge jig, 30 ... rod-shaped polycrystalline raw material,
31 ... Hanging wire, 32 ... Hanging jig, 33 ... Seed chuck,
34 ... Wire.

Claims (7)

A recharging jig used for melting a rod-shaped polycrystalline raw material in the production of a single crystal by the Czochralski method, comprising at least a bottom body supporting the rod-shaped polycrystalline raw material and an upper portion of the bottom body And a suspension member attached to the support, wherein the bottom body is removable from the support, is loaded with the rod-shaped polycrystalline raw material, and the suspension member The rod-shaped polycrystalline raw material is melted while being dipped together with the rod-shaped polycrystalline raw material in a raw material melt in a quartz crucible. Recharge jig for polycrystalline raw material.   The support is disposed so as to surround at least a plurality of support pillars extending vertically in the upper part of the bottom body to be connected, and the rod-shaped polycrystalline material to be loaded while connecting the support pillars to each other. The polycrystalline raw material recharging jig according to claim 1, further comprising at least one supporting member.   The recharge jig for polycrystalline raw materials according to claim 1 or 2, wherein the recharge jig has an inner diameter that is 10 to 40 mm larger than a diameter of the rod-shaped polycrystalline raw material to be loaded.   The polycrystalline material recharging jig according to any one of claims 1 to 3, wherein the recharging jig is made of quartz. A method for recharging a polycrystalline material, wherein the polycrystalline material is recharged using the recharging jig according to any one of claims 1 to 4 . A recharging method for melting a rod-shaped polycrystalline raw material in the production of a single crystal by the Czochralski method, comprising at least a bottom for supporting the rod-shaped polycrystalline raw material, and a support connected to the top of the bottom If, Ri Do and a hanging member which is attached to the support, the bottom body, using a recharge jig those removable from the support, loaded with the rod-like polycrystalline raw material to the recharge jig The rod-shaped multi-material is introduced into the single crystal manufacturing apparatus by being suspended by the suspension member, while immersing at least the bottom body of the recharge jig together with the rod-shaped polycrystalline raw material in the raw material melt in the quartz crucible. A method for recharging a polycrystalline raw material, comprising melting the crystalline raw material. The method for recharging a polycrystalline raw material according to claim 6 , wherein the rod-shaped polycrystalline raw material to be loaded has a diameter smaller by 10 to 40 mm than the inner diameter of the support.

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