JP4597910B2 - Dicing die adhesive film for semiconductor - Google Patents

Description

  The present invention relates to a dicing die adhesive film, and more particularly to a dicing die adhesive film for a semiconductor that is bonded to the back surface of a semiconductor wafer and used in a dicing process, and bonds a die (semiconductor chip) and a substrate. .

  Conventionally, a paste-type adhesive is mainly used to attach a die (semiconductor chip) to a substrate. However, the paste type adhesive has a problem that it is difficult to adjust the thickness when the adhesive is applied, a bleeding problem occurs, and a wafer level process is impossible. Therefore, recently, a film-type die adhesive has been used.

  In general, in a semiconductor process using a film-type die adhesive, a dicing process is performed after adhering a die adhesive film to a semiconductor wafer and further attaching a separate dicing tape. Recently, a dicing die adhesive film (DDAF) having dicing and die bonding functions at the same time has been proposed in order to simplify the film adhering process twice. Such a dicing die adhesive film usually includes an adhesive layer attached to the back surface of the wafer and a dicing film attached to the adhesive layer, and by fixing the wafer, the scattering of the die during the dicing process is prevented. At the same time, it serves to fix the die to the substrate.

The wafer dicing process using such a dicing die bonding film includes a step of bonding the dicing die film to the back surface of the wafer, a step of cutting the wafer into a die size, and picking up the die / die bonding film after cleaning and drying. It consists of stages.
JP-A-2-32181

  However, the adhesive layer of such a dicing die adhesive film must be firmly fixed to the dicing film during dicing, while it must be easily separated from the dicing film during die pickup. Conflicting properties are required. In particular, since silicon dust and an adhesive film softened by frictional heat are combined in such a process to form an elongated burr, there is a problem in that a defect is generated during wire bonding. .

  Accordingly, the present invention was devised to solve the above-mentioned problems, and maintains a high adhesive force between the wafer and the die adhesive film when adhering to the back surface of the wafer, while maintaining a high adhesive force between the wafer and the die adhesive film. By reducing the peel force between the dicing film and the dicing film, the tape burr phenomenon can be prevented during the dicing process, the die pick-up can be prevented, and the adhesive force between the die and the substrate can be maintained sufficiently during die bonding. An object of the present invention is to provide a dicing die adhesive film for semiconductor.

To achieve the above object, the present invention provides a dicing die adhesive film for a semiconductor used in a semiconductor packaging process, wherein the dicing die adhesive film is bonded to a back surface of a wafer, and the first adhesive layer is bonded. A second adhesive layer adhered to the surface of the layer, and a dicing film adhered to the surface of the second adhesive layer and separable from the second adhesive layer at the time of die pick-up, and storing the first adhesive layer at room temperature The elastic modulus (T1) is 10 MPa or more and smaller than the room temperature storage elastic modulus (T2) of the second adhesive layer, the T2 is 50 MPa to 300 MPa, and the elongation rate (E1) of the first adhesive layer is the second. is greater than the expansion rate of the adhesive layer (E2), wherein from 50% to 500% of the measured value at room temperature (25 ° C.) of the E2, the adhesive strength of the first adhesive layer (Ta1) The adhesive force (Ta2) of the second adhesive layer is larger than that, and the measured value of Ta2 at 60 ° C. is 30 gf to 350 gf, and the peel force (P1) between the first adhesive layer and the wafer is the second It is larger than the peeling force (P2) between the adhesive layer and the dicing film, and the P1 is 30 gf / cm to 300 gf / cm.

  Also, the dicing die adhesive film for semiconductor of the present invention is manufactured from a composition in which each of the first adhesive layer and the second adhesive layer includes a solid epoxy resin, a liquid epoxy resin, a rubber resin, and a filler. It is characterized by.

  Further, in the dicing die adhesive film for a semiconductor of the present invention, the first adhesive layer has a solid epoxy resin of 30 wt% to 50 wt%, a liquid epoxy resin of 20 wt% to 40 wt%, and a rubber resin of 50 wt% to Manufactured using a first composition comprising 10% by weight of a first basic resin composition and 1 to 30 parts by weight of filler relative to the total weight of the first basic resin composition; The second adhesive layer includes a second basic resin composition comprising 35 wt% to 55 wt% of a solid epoxy resin, 15 wt% to 35 wt% of a liquid epoxy resin, and 50 wt% to 10 wt% of a rubber resin; It is characterized by being manufactured using a second composition comprising 1 to 30 parts by weight of filler with respect to the total weight of the second basic resin composition.

  According to the present invention, not only the burr phenomenon and die pickup failure during the dicing process can be prevented, but also the adhesive force between the die and the substrate can be sufficiently maintained during die bonding. Thereby, the reliability of the semiconductor packaging process can be ensured.

  Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. Prior to this, the terms and words used in the specification and claims should not be construed in a normal or lexicographic sense, and the inventor will explain his invention in the best way possible. Therefore, based on the principle that the concept of the term can be appropriately defined, it should be interpreted as a meaning and a concept consistent with the technical idea of the present invention. Therefore, the configuration described in the examples and drawings described in the present specification is only the most preferred embodiment of the present invention, and does not represent the entire technical idea of the present invention. It should be understood that there may be a variety of equivalents and variations that can be substituted at this time. The following drawings attached to the present specification illustrate preferred embodiments of the present invention, and serve to further understand the technical idea of the present invention together with the detailed description of the invention. The invention should not be construed as limited to the matter set forth in such drawings.

  The present inventors have conducted research to develop a dicing die-adhesive film with less burr generation and no interfacial debonding phenomenon between the wafer and the adhesive layer in the pick-up process. As a result, the first adhesion adhered to the back surface of the wafer. A dicing die film comprising: a layer, a second adhesive layer adhered to the surface of the first adhesive layer, and a dicing film adhered to the surface of the second adhesive layer, wherein the first adhesive layer and the second adhesive layer The present invention has been completed by adjusting the storage elastic modulus, adhesive strength, elongation rate, tensile strength, interfacial peel force, etc.

  FIG. 1 is a cross-sectional view illustrating a dicing die adhesive film 100 according to a preferred embodiment of the present invention. Referring to FIG. 1, a dicing die adhesive film 100 according to the present embodiment includes a base film 110, a first adhesive layer 120 adhered to one surface of the base film 110, and a second adhesive adhered to the first adhesive layer 120. The dicing film 140 bonded to the adhesive layer 130 and the second adhesive layer 130 is laminated.

  The base film 110 is a film used for maintaining the basic form of the dicing die bonding film 100, and is preferably polyethylene terephthalate (PET) or polyethylene-2,6-naphthalene dicarboxylate. Although it can be manufactured using a substance such as (PEN), it is not necessarily limited thereto.

  The first adhesive layer 120 of the dicing die adhesive film 100 is a material layer that is adhered to the back surface of the wafer during the semiconductor packaging process and requires a high adhesive force with a die that is a cut piece of the wafer. The second adhesive layer 130 of the dicing die adhesive film is a material layer that is bonded to the dicing film 140 and requires a lower adhesive force than that required between the first adhesive layer 120 and the die. The dicing film 140 is temporarily attached to the semiconductor wafer in the dicing process of the semiconductor wafer, and fixes and supports the wafer when the wafer is cut. The dicing film 140 is an acrylic, rubber, polyester, or silicone type. A polyvinyl chloride film or a polyolefin film provided with an adhesive layer formed by applying an adhesive substance such as

  When cutting the dicing die adhesive film 100, physical properties such as storage modulus and elongation must be adjusted in order to minimize the occurrence of burrs and eliminate cutting defects. . This is because the higher the storage elastic modulus is, the better the cutting property is, and the lower the storage elastic modulus is, the higher the possibility of occurrence of burrs as the adhesive film 100 is stretched during cutting with a blade or knife. On the other hand, if the storage elastic modulus is too high, a relatively low adhesive force is exhibited, and therefore, peeling occurs at the bonding interface, and the possibility of occurrence of burrs increases. In the case of the stretch ratio, the higher the value, the higher the possibility that burrs will occur because the characteristics of being stretched by a blade or knife are stronger than the characteristics of being cut by cutting.

  In the dicing die adhesive film 100 of the present invention, the first adhesive layer 120 improves the adhesive strength with the wafer by adjusting the elastic modulus and tensile strength to be low, while the second adhesive layer 130 has the elastic modulus and tensile strength. The rigidity of the film is improved by adjusting the stretch ratio to be high and the stretch ratio to be low.

  Specifically, the storage elastic modulus (T1) of the first adhesive layer 120 in the dicing die adhesive film 100 of the present invention is smaller than the storage elastic modulus (T2) of the second adhesive layer 130, and the T2 is 50 MPa to 300 MPa. It is desirable to be. In connection with the numerical limitation on the storage elastic modulus (T2) of the second adhesive layer 130, when the lower limit is not reached, the firmness of the film is reduced and a large amount of burrs are generated during cutting. This is because if the value exceeds the value, an overflow occurs in the process, and a defect in wire bonding is likely to occur.

  On the other hand, in the dicing die adhesive film 100 of the present invention, the stretch rate (E1) of the first adhesive layer 120 is larger than the stretch rate (E2) of the second adhesive layer 130, and E2 has a measured value at room temperature of 50%. It is desirable to be -500%. This is a requirement required to maintain the firmness of the film.

  Further, in order to improve processability in the pickup process, the adhesive strength of the first adhesive layer 120 and the second adhesive layer 130 must be optimized. In the case of the first adhesive layer 120, the higher the adhesive strength, the better the adhesion between the adhesive film 100 and the wafer and the more difficult the dies are to be scattered during the dicing process. Rather, due to the high adhesive strength of 140, defects may occur during the pick-up process. Accordingly, the first adhesive layer 120 has a high adhesive force so that the generation of bubbles during lamination can be suppressed and the low temperature (60 ° C.) lamination process can be applied. It is desirable to facilitate separation from the dicing film 140 by having an adhesive strength lower than that of the adhesive layer 120. Therefore, in the present invention, the interlayer adhesive force (Ta1) between the die and the first adhesive layer 120 is made larger than the interlayer adhesive force (Ta2) between the second adhesive layer 130 and the dicing film 140, and the Ta2 is 60 ° C. A measured value of 30 gf to 350 gf is used.

  In the pick-up process, there should be no peeling phenomenon at the interface between the wafer (die) and the first adhesive layer 120 when the interface between the dicing film 140 and the second adhesive layer 130 is separated. The peeling force (P1) between the first adhesive layer 120 and the wafer of the dicing die adhesive film 100 of the invention is made larger than the peeling force (P2) between the second adhesive layer 130 and the dicing film, and the P1 is 30 gf / cm˜ It is desirable that it is 300 gf / cm.

  Meanwhile, it is preferable that the first adhesive layer 120 and the second adhesive layer 130 each include a solid epoxy resin, a liquid epoxy resin, a rubber resin, and a filler.

  At this time, in order to appropriately obtain the storage elastic modulus, the adhesive force, the elongation rate, and the interface peeling force of the first adhesive layer 120 and the second adhesive layer 130, the first adhesive layer 120 includes a solid epoxy resin 30 weight. % Of the first basic resin composition comprising 50% by weight to 50% by weight, 20% by weight to 40% by weight of the liquid epoxy resin, and 50% by weight to 10% by weight of the rubber resin, and the total weight of the first basic resin composition Manufactured using a first composition comprising 1 to 30 parts by weight of filler. The second adhesive layer 130 includes a second basic resin composition comprising a solid epoxy resin 35 wt% to 55 wt%, a liquid epoxy resin 15 wt% to 35 wt%, and a rubber resin 50 wt% to 10 wt%. It is desirable to manufacture using the 2nd composition which comprises a 1 to 30 weight part filler with respect to the total weight of a thing and a said 2nd basic resin composition.

  At this time, as a solid epoxy resin, bisphenol A type phenoxy having an equivalent range of 10,000 to 50,000, bisphenol F type phenoxy having an equivalent range of 10,000 to 50,000, and bisphenol A type having an equivalent range of 400 to 6000 A solid epoxy, or a bisphenol F-type solid epoxy resin having an equivalent weight in the range of 400 to 6000 can be used alone or as a mixture thereof, but is not limited thereto.

  Liquid epoxy resins include bisphenol A type liquid epoxy resin, bisphenol F type liquid epoxy resin, trifunctional or higher polyfunctional liquid epoxy resin, rubber modified liquid epoxy resin, urethane modified liquid epoxy resin, acrylic modified liquid. An epoxy resin, a photosensitive liquid epoxy resin, or the like can be used, and these can be used alone or as a mixture, but are not limited thereto.

  The rubber resin may be NBR (butadiene-acrylic rubber) having an acrylonitrile content of 15% to 40% by weight and a Mooney viscosity at 100 ° C. of 20 to 80, and an acrylonitrile content of 15% by weight. HBR (hydrogenated butadiene-acrylic rubber) having a Mooney viscosity of 20 to 80 at 100 ° C., SBR having a styrene content of 10 to 30% by weight, and a styrene content 10% to 60% by weight of SBS (polystyrene-co-butadiene-co-styrene), styrene content of 10% by weight SEBS (hydrogenated polystyrene-co-butadiene-co-styrene), which is ˜60% by weight, can be used singly or as a mixture thereof, but is not limited thereto.

  Further, the filler can increase the internal strength (internal stress) of the adhesive layer, improve the cutting property, decrease the adhesive force, and improve the processability. As such filler, silica, graphite (graphite), aluminum, carbon black, etc. can be used alone or as a mixture thereof, but are not limited thereto. Not. If the content of such a filler is too low, it is difficult to adjust the rigidity and adhesive strength, and if it is too high, the stress cannot be effectively absorbed.

  In addition to the above, the adhesive composition of the present invention may further contain an appropriate additive within the scope of the present invention without impairing the effects of the present invention. Examples include, but are not limited to, agents, coupling agents, and UV curing aids.

  That is, the first composition for producing the first adhesive layer 120 or the second composition for producing the second adhesive layer is based on the total weight of the first composition or the second composition. It is preferable to further include an epoxy curing agent which is one or more materials selected from amine, organic acid and anhydride materials contained in an amount of 1 to 30 parts by weight.

  The first composition for producing the first adhesive layer 120 or the second composition for producing the second adhesive layer has an amount of 0. 0 relative to the total weight of the first composition or the second composition. 1-hydroxyhexyl phenyl ketone, 2-hydroxy-2-methyl-1-phenylpropan-1-one, 4- (2-hydroxyethyl) phenyl- (2- Hydroxy-2-methylpropyl) ketone, phosphate oxide, cyclopentadienyl phenyl iron excafluorophosphate, diphenyl ketone, bis (2,6-dimethoxybenzoyl) -t-butyl-2-methylethylphosphine oxide, bis (2, 4,6-trimethoxybenzoyl) phenylphosphine oxide is any one or more substances V curing agent further desirably included.

  The first composition for producing the first adhesive layer 120 or the second composition for producing the second adhesive layer has an amount of 0. 0 relative to the total weight of the first composition or the second composition. A silane coupling agent, an aluminum coupling agent, a titanate coupling agent, and the like included in a content of 1 to 20 parts by weight may be used, but are not limited thereto. Such a coupling agent not only serves as an auxiliary agent capable of bonding a dispersed phase composed of a filler and a continuous phase composed of a resin, but also promotes adhesion to an adhesive base such as a die or a substrate. It also plays a role as.

  The dicing die adhesive film 100 according to the present invention includes, for example, a roll coater such as an air knife coater, a comma coater, a lip coater, or a gravure coater. The first adhesive layer 120 and the second adhesive layer 130 are respectively casted and manufactured in a film shape, and then the two layers are bonded together through a high temperature (60 to 100 ° C.) lamination process, and the second adhesive layer 130 is diced. The film 140 may be manufactured by being laminated, but is not limited thereto.

  The dicing die adhesive film 100 is used in the semiconductor packaging process shown in FIGS. Hereinafter, the dicing die adhesive film 100 according to the present invention will be described in detail together with the semiconductor packaging process.

  First, a semiconductor wafer 1 is prepared as shown in FIG. Thereafter, a dicing die bonding film 100 is laminated on the back surface of the semiconductor wafer 1 as shown in FIG. Prior to the lamination step, the base film 110 attached to the uppermost surface of the dicing die bonding film 100 is removed.

  Thereafter, as shown in FIG. 4, the wafer 2 is subjected to a dicing process for cutting the semiconductor wafer 1 into a predetermined die size, followed by a water washing / drying process. In the dicing process, the wafer 1 and the adhesive layers 120 and 130 are completely cut, and the dicing film 140 is cut only to a certain depth.

  Then, as shown in FIG. 5, the die 4 cut after the dicing process is die picked up using the pick-up tool 3. At this time, only the first adhesive layer 120 and the second adhesive layer 130 excluding the dicing film 140 are maintained in the state of being bonded to the die 4 so that the pickup process can be easily performed. That is, the dicing die adhesive film 100 according to the present invention has a higher adhesive force between the die 4 and the first adhesive layer 120 than the adhesive force between the second adhesive layer 130 and the dicing film 140. The film 140 can be effectively separated from the second adhesive layer 130.

  Thereafter, as shown in FIG. 6, a die bonding process is performed in which the die 4 is attached onto a substrate 5 such as a lead frame, a printed circuit board, or a tape wiring board. Thereafter, a heat treatment curing step can be performed in order to further strengthen the adhesive force between the die 4 and the substrate 5.

  Thereafter, the die 4 and the substrate 5 are connected by wire bonding as shown in FIG. 7 (see 6), and finally an epoxy molding process is performed as shown in FIG. 8 (see 7) to complete the semiconductor packaging.

  Hereinafter, examples will be described in detail in order to help understanding of the present invention. However, the embodiments according to the present invention can be modified to various other embodiments, and the scope of the present invention should not be construed as being limited to the following embodiments. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art.

  After manufacturing each adhesive layer by casting using an air knife coater according to the composition and content shown in Table 1 below, two films are bonded together through a high temperature (90 ° C) lamination process, and a dicing film is laminated thereon. Thus, a dicing die adhesive film was produced.

  In Table 1 above, BPA type epoxy resin (solid) as solid epoxy resin, BPA type epoxy resin (liquid) as liquid epoxy resin, NBR as rubber resin, amine curing agent as UV curing agent, UV curing Diacrylate was used as an auxiliary agent, silica was used as a filler, and silane coupling agent was used as a coupling agent.

  The storage elastic modulus, adhesive strength, elongation rate, and interfacial peel force were measured for each of the dicing die adhesive films produced in the examples and comparative examples by the following methods, and the results are shown in Table 2 below. Summarized.

Storage modulus:
The storage elastic modulus was analyzed using UTM (Universal Testing Machine), which is a universal testing machine, and measured at room temperature (25 ° C.). The thickness of the adhesive layer of the sample used for measuring the storage elastic modulus was 25 μm. The storage elastic modulus of the first adhesive layer must be smaller than that of the second adhesive layer, and the room temperature storage elastic modulus of the second adhesive layer is preferably 50 MPa to 300 MPa.

Adhesive force:
The adhesive strength was measured at 60 ° C. using an adhesive strength tester (Tackiness tester), the thickness of the sample used for measuring the adhesive strength was 25 μm, and the probe size was 5.1 mm in diameter. . The adhesive strength of the first adhesive layer must be greater than that of the second adhesive layer, and the adhesive strength of the second adhesive layer at 60 ° C. is preferably 30 gf to 350 gf.

Stretch rate:
The elongation was analyzed using UTM and measured at room temperature (25 ° C.). The thickness of the adhesive layer of the sample used for the measurement of the stretching ratio was 25 μm. The stretch rate of the first adhesive layer must be greater than that of the second adhesive layer, and the room temperature stretch rate of the second adhesive layer is preferably 50% to 500%.

Interfacial peel strength:
180 degree peel strength was measured at room temperature using a push-pull gauge. The interfacial peel force P1 at the first adhesive layer means the peel force between the first adhesive layer and the wafer, and the interfacial peel force P2 at the second adhesive layer means the peel force between the second adhesive layer and the dicing film. . The thickness of the adhesive layer of the sample used for measuring the interfacial peel force was 25 μm. At this time, P1 must be larger than P2, and P1 is preferably 30 gf / cm to 300 gf / cm.

  Referring to Table 2 above, in Examples 1 and 2 according to the present invention, the storage elastic modulus of the first adhesive layer is smaller than that of the second adhesive layer, and the adhesive force, elongation rate, and interfacial peel force are the same. It can be seen that the two adhesive layers are shown smaller than the first adhesive layer. On the other hand, the storage elastic modulus in Comparative Example 1 shows that the first adhesive layer is larger than the second adhesive layer, and the adhesive force and the elongation rate show that the second adhesive layer is larger than the first adhesive layer, The interfacial peeling force is not desirable because the numerical difference between the two layers is not large and the die pick-up is not easily performed. In Comparative Example 2, the adhesive strength of the first adhesive layer is larger than that of the second adhesive layer. However, since the absolute adhesive strength value of the second adhesive layer is large, the die pickup is easy. This is not desirable because it is not done.

  On the other hand, for each of the examples and comparative examples according to the present invention, the presence or absence of burrs and the ease of pickup were measured by the following methods, and the results are summarized in Table 3 below.

Existence of burrs:
The adhesive film and the wafer were laminated through a WBL (Wafer Backside Lamination) process, and after the dicing process was performed, the presence or absence of burrs was observed with a microscope. The thickness of the adhesive layer of the sample used was 25 μm. At this time, it is not desirable to generate burrs, and burrs should not be generated in order to receive good evaluation.

Easy pick up:
It can be observed with the naked eye whether or not the dicing film is well peeled off from the second adhesive layer at the time of picking up. A case where the degree of peeling exceeded 30 was regarded as defective.

  As can be seen from Table 3, in the case of the example satisfying the conditions of the present invention, no burrs are generated and the die pick-up is easily performed. However, according to the comparative example, it is understood that the burr phenomenon occurs, the cutting property and the ease of picking up are poor, and the processability is deteriorated.

  As described above, according to the present invention, the object of the present invention is sufficiently satisfied by evaluating that the required physical property values of the product are sufficiently satisfied but that no burrs are generated and that the pickup is easy. You can see that

  As described above, the present invention has been described based on the limited embodiments and examples, and the drawings. However, the present invention is not limited to this, and a person having ordinary knowledge in the technical field to which the present invention belongs. Needless to say, various modifications and changes can be made within the scope of the technical idea of the present invention and the scope of claims.

  According to the present invention, not only the burr phenomenon and die pickup failure during the dicing process can be prevented, but also the adhesive force between the die and the substrate can be sufficiently maintained during die bonding. Thereby, the reliability of the semiconductor packaging process can be ensured. Therefore, the present invention can be sufficiently utilized in the technical field of dicing die adhesive films.

1 is a cross-sectional view illustrating a dicing die adhesive film according to a preferred embodiment of the present invention. 1 is a diagram illustrating a semiconductor packaging process using a dicing die adhesive film according to a preferred embodiment of the present invention. 1 is a diagram illustrating a semiconductor packaging process using a dicing die adhesive film according to a preferred embodiment of the present invention. 1 is a diagram illustrating a semiconductor packaging process using a dicing die adhesive film according to a preferred embodiment of the present invention. 1 is a diagram illustrating a semiconductor packaging process using a dicing die adhesive film according to a preferred embodiment of the present invention. 1 is a diagram illustrating a semiconductor packaging process using a dicing die adhesive film according to a preferred embodiment of the present invention. 1 is a diagram illustrating a semiconductor packaging process using a dicing die adhesive film according to a preferred embodiment of the present invention. 1 is a diagram illustrating a semiconductor packaging process using a dicing die adhesive film according to a preferred embodiment of the present invention.

Explanation of symbols

100 Dicing Die Adhesive Film 110 Base Film 120 First Adhesive Layer 130 Second Adhesive Layer 140 Dicing Film

Claims (3)

In a semiconductor dicing die adhesive film used in a semiconductor packaging process, the dicing die adhesive film includes a first adhesive layer adhered to the back surface of a wafer and a second adhesive layer adhered to the surface of the first adhesive layer. And a dicing film adhered to the surface of the second adhesive layer and separable from the second adhesive layer at the time of die pick-up ,
The normal temperature storage elastic modulus (T1) of the first adhesive layer is 10 MPa or more and smaller than the normal temperature storage elastic modulus (T2) of the second adhesive layer , and the T2 is 50 MPa to 300 MPa,
The elongation rate (E1) of the first adhesive layer is larger than the elongation rate (E2) of the second adhesive layer, and the measured value of the E2 at room temperature (25 ° C.) is 50% to 500%,
The adhesive strength (Ta1) of the first adhesive layer is greater than the adhesive strength (Ta2) of the second adhesive layer, and the measured value of Ta2 at 60 ° C. is 30 gf to 350 gf,
The peel force (P1) between the first adhesive layer and the wafer is larger than the peel force (P2) between the second adhesive layer and the dicing film, and the P1 is 30 gf / cm to 300 gf / cm. Dicing die adhesive film for semiconductors. The semiconductor dicing according to claim 1, wherein each of the first adhesive layer and the second adhesive layer is manufactured from a composition comprising a solid epoxy resin, a liquid epoxy resin, a rubber resin, and a filler. Die adhesive film. The first adhesive layer comprises a first basic resin composition comprising a solid epoxy resin 30 wt% to 50 wt%, a liquid epoxy resin 20 wt% to 40 wt%, and a rubber resin 50 wt% to 10 wt%; Manufactured using a first composition comprising 1 to 30 parts by weight of filler relative to the total weight of the first basic resin composition,
The second adhesive layer includes a second basic resin composition comprising 35 wt% to 55 wt% of a solid epoxy resin, 15 wt% to 35 wt% of a liquid epoxy resin, and 50 wt% to 10 wt% of a rubber resin; 3. The semiconductor device according to claim 2, wherein the semiconductor composition is manufactured using a second composition comprising 1 to 30 parts by weight of filler with respect to the total weight of the second basic resin composition. Dicing die adhesive film.

Images