JP4593980B2 - Photoelectric conversion device, solar cell element using the same, and solar cell module - Google Patents

Description

  The present invention relates to a photoelectric conversion device having a substantially linear surface collecting electrode, a solar cell element using the photoelectric conversion device, and a solar cell module.

At present, the mainstream solar cell is a bulk silicon solar cell using a crystalline silicon substrate. FIG. 7 shows a general configuration of the bulk type silicon solar cell 110 described in Patent Document 1. FIG. 7A shows a cross-sectional structure. As shown in the figure, P (phosphorus) atoms and the like are diffused at a high concentration on the light incident surface side of a p-type bulk region 105 made of a p-type silicon semiconductor substrate, thereby forming a pn junction with the p-type bulk region. The reverse conductivity type region 104 is formed, and an antireflection film 106 made of a silicon nitride film, a silicon oxide film or the like is further provided. Further, on the opposite side of the light incident surface, a p ⁺ type region 107 which is a p ⁺ region containing a large amount of p type semiconductor impurities such as aluminum is provided.

When light is incident from the light incident surface, photogenerated carriers are generated in the semiconductor region 103 composed of the reverse conductivity type region 104, the p-type bulk region 105, and the p ⁺ -type region 107. Therefore, on the light incident surface side, a surface collecting electrode (a bus bar electrode 101, a finger electrode 102 (described later)) whose main component is a metal material such as silver is provided, and on the opposite side, a back surface collecting electrode made of aluminum. 108, a back surface output electrode 109 mainly composed of silver is provided.

  FIG. 7B is a view of the surface collection electrode viewed from the light incident surface (front surface) side. In the figure, reference numeral 101 denotes a bus bar electrode, and 102 denotes a finger electrode. As described above, the surface collection electrode generally includes a finger electrode 102 (branch electrode) having a narrow line width and a bus bar electrode 101 (trunk electrode) having a large line width to which at least one end of the finger electrode 102 is connected. ing.

  In order to reduce the power loss at the surface electrode as much as possible, a metal material is usually used for the surface electrode, and in particular, silver having a low resistivity is generally the main component. A silver paste or the like is applied by a printing method or the like and then baked.

Further, since the surface collection electrode is disposed on the light incident surface, an optical loss (reflection loss) corresponding to the area of the surface collection electrode inevitably occurs. Therefore, it is necessary to make the finger electrode 102 and the bus bar electrode 101 of the surface collection electrode as thin as possible. On the other hand, since the thinning increases the line resistance of the finger electrode 102 and the bus bar electrode 101, the resistance loss of power increases. Therefore, it is necessary to make an optimum design in consideration of the balance between the two (optical loss side and resistance loss side). In order to carry the electrons collected on the finger electrode 102 to the bus bar electrode 101 as much as possible without loss (in order to minimize the finger electrode length), the finger electrode 102 is generally provided orthogonal to the bus bar electrode 101. is there. FIG. 7C shows an enlarged view of the portion C in FIG. 7B. As shown in FIG. 7C, the finger electrodes 102 are usually provided almost linearly. This serves the purpose of suppressing electrical loss (resistance loss) due to finger electrode length and suppressing optical loss.
JP-A-8-274356 JP-A-5-75152 JP-A-9-102625 Japanese Patent Laid-Open No. 11-31265

  As described above, the collector electrode needs to be designed to optimally balance between the optical loss caused by the optical loss and the electrical loss due to the finger electrode length, but these are naturally in a trade-off relationship. There is a limit. Therefore, the inventor has eagerly studied whether or not the electrical loss other than the electrical loss due to the finger electrode length can be reduced, and the contact resistance (contact resistance) between the surface electrode and the semiconductor region 103 is reduced. We focused on the issue of improvement.

  The contact resistance between the collector electrode / semiconductor region 103 is one of the series resistance components that particularly affect the fill factor (FF) in the solar cell characteristics. Increasing the contact resistance decreases the FF characteristics and decreases the conversion efficiency. Let Here, conversion efficiency η∝short-circuit current density Jsc × open circuit voltage Voc × fill factor FF. When the shunt resistance Rsh is not sufficiently large, that is, when the leakage current is not sufficiently small, the open circuit voltage Voc is particularly affected in proportion to the degree.

  Therefore, a solar cell element having a conversion efficiency of about 15% using a polycrystalline silicon substrate used in a crystalline silicon module currently on the market originates from the contact portion of the surface electrode / semiconductor region 103. As a result of calculating the effect of contact resistance on the conversion efficiency of the solar cell, it was estimated from the various experimental data accumulated so far that the loss amount was about 0.3% in terms of conversion efficiency. Therefore, if such contact resistance can be reduced, the conversion efficiency of the solar cell can be further improved.

  The present invention has been made in view of such problems, and provided a photoelectric conversion device with improved output characteristics by reducing the contact resistance between the collector electrode and the semiconductor region, and used the same. It aims at providing the solar cell which has high conversion efficiency.

In order to achieve the above object, a photoelectric conversion device according to the present invention includes a semiconductor region having a light incident surface, and the light that collects, as a current, photogenerated carriers generated in the semiconductor region by light irradiation on the light incident surface. A substantially linear surface collection electrode disposed on the incident surface; and a contact portion where the surface collection electrode and the semiconductor region are in contact with each other, the surface collection electrode comprising a finger electrode and at least one of the finger electrodes A bus bar electrode for output extraction having one end connected and a line width wider than the finger electrode, and the direction of current flowing through the finger electrode is the same as the center line of the outline of the contact portion The tangential direction of the contour line and the current direction does not coincide with a part of the region,
The contour in the region has a concave convex bending, concave convex bending is asymmetric across the center line.

The photoelectric conversion device according to this onset bright, in the photoelectric conversion device, wherein the contact portion, and said finger electrodes of the table collecting electrode and said semiconductor region is formed in contact, is surrounded by the outer line of the contact portion and the area of S _1, the average value of the distance between the two points of intersection of the respective of the contour of the contact portion is formed by cutting a plurality of cutting plane substantially perpendicular to the current direction of the finger electrode cutting plane When d ₁ and the total length of the outline of the contact portion are L ₁ , these have at least one finger electrode having a relationship of the following formula.

0.5L ₁ (S ₁ · d ₁ ⁻¹ + d ₁ ) ⁻¹ > 1.2 (1)
Central photoelectric conversion device according to the present onset Ming, the shape of the outline of the front SL contact portion, a center line of the table collecting electrodes forming the contact portion, forming the same direction as the current direction in this table collector electrode It has at least a portion that is asymmetric with respect to the line.

The photoelectric conversion device according to this onset Ming, before SL contact portion, and the bus bar electrode of the table collecting electrode and said semiconductor region is formed in contact, in a plan view the contact portion from the vertical direction of the light incident surface When the total length of the contour lines is L ₂ , the area is S _2, and the area when the entire light incident surface is viewed in plan view from the vertical direction of the light incident surface is S ₃ , these are Have the relationship.

L ₂ > 5S ₃ ^1/2 (2)
0.015 <S ₂ / S ₃ <0.050 (3)
Solar cell element according to the present onset Ming uses a photoelectric conversion device of the prior SL present invention.

Solar cell module according to the present onset Ming, which are electrically connected to each other while being arranged at predetermined intervals, a solar cell module having a plurality of plate-like solar cell element, said plurality of solar cell elements includes a solar cell element of the previous SL present invention.

  In the present invention, the contact portion where the electrode and the semiconductor region are in contact does not necessarily indicate that the electrode and the semiconductor region are in contact with each other. The electrode is provided in the semiconductor region, and the electrode and the semiconductor region are provided. What is necessary is just to be mutually connected between.

  Moreover, even if these claims are combined with each other, the effects of the present invention can be obtained.

According to the present invention, a semiconductor region having a light incident surface and a substantially linear shape disposed on the light incident surface that collects, as a current, photogenerated carriers generated in the semiconductor region by light irradiation on the light incident surface. A surface electrode, and a contact portion where the surface electrode and the semiconductor region are in contact with each other. The surface electrode is connected to a finger electrode and at least one end of the finger electrode and from the finger electrode. And a bus bar electrode for output extraction, the current direction flowing through the finger electrode is the same direction as the center line of the outline of the contact portion, and the tangential direction of the outline wherein the portion of the region where said current direction do not match, the contour in the region has a concave convex bending, concave convex bending is asymmetric across the center line. As a result , the length of the edge portion of the collector electrode (the contour line of the contact region that the electrode serves as the semiconductor region) is increased as compared with the case of the linear shape. Therefore, Wc in Rc = Rcs / (Wc × Dc) is substantially increased, and as a result, the contact area is increased and the contact resistance can be reduced.

  As described above, according to the photoelectric conversion device of the present invention, since the substantial contact area between the collector electrode and the semiconductor is increased, the contact resistance between the contact portions can be effectively reduced, and the solar cell using this photoelectric conversion device can be reduced. The battery becomes highly efficient.

  Hereinafter, embodiments of a solar cell element which is an example of a photoelectric conversion device according to the present invention will be described in detail with reference to the drawings.

  Fig.1 (a) is a figure which shows an example of the electrode shape by the side of the light-incidence surface (light-receiving surface side, surface side) of the solar cell element concerning this invention, FIG.1 (b) is A of FIG.1 (a). FIG. 3 is a partially enlarged view of the section taken along the BB cross section of FIG. 2A is a diagram showing a cross-sectional structure of the solar cell element according to the present invention, and FIG. 2B is an example of the electrode shape on the non-light incident surface side (non-light-receiving surface side, back surface side). FIG.

The structure will be briefly described. As shown in FIG. 2A, P (phosphorus) atoms and the like are diffused at a high concentration on the light incident surface side of the p-type bulk region 5 made of a p-type silicon semiconductor substrate, and between the p-type bulk region. A reverse conductivity type region 4 having a pn junction is formed, and an antireflection film 6 made of a silicon nitride film or a silicon oxide film is further provided. In addition, a p ⁺ type region 7 that is a p ⁺ region containing a large amount of a p type semiconductor impurity such as aluminum is provided on the opposite side of the light incident surface, and the solar cell element 10 according to the present invention is configured. Yes. As shown in FIGS. 1 (a) and 2 (b), on the light incident surface side of the solar cell element 10, surface electrodes (bus bar electrode 1, finger electrode 2) mainly composed of a metal material such as silver are provided. On the opposite side, a back collector electrode 8 made of aluminum and a back output electrode 9 mainly composed of silver are provided.

When light is incident from the side of the antireflection film 6 that is the light incident surface side of the solar cell element 10, it is absorbed by the semiconductor region 3 including the reverse conductivity type region 4, the p-type bulk region 5, and the p ⁺ -type region 7. -Photoelectric conversion generates electron-hole pairs (electron carriers and hole carriers). Photoelectromotive force is generated between the substantially linear surface collection electrode provided on the front side of the solar cell element 10 and the back side electrode provided on the back side by the electron carrier and hole carrier (photogenerated carrier) originating from the photoexcitation. The generated photogenerated carriers are collected by these electrodes and guided to the output terminal.

  FIG. 1A is a diagram showing an example of a surface collecting electrode viewed from the light incident surface (front surface) side. In the figure, 1 is a bus bar electrode and 2 is a finger electrode. The surface collecting electrode generally includes a finger electrode 2 (branch electrode) having a narrow line width and a bus bar electrode 1 (stem electrode) having a large line width to which at least one end of the finger electrode 2 is connected. In order to reduce the power loss at the surface electrode as much as possible, a metal material is usually used for the surface electrode, and in particular, silver having a low resistivity is generally the main component. A silver paste or the like is applied by a printing method or the like and then baked.

As shown in FIG. 2B, the back side electrode includes a back surface collecting electrode 8 and a back surface output electrode 9. The back surface collecting electrode 8 is usually formed using aluminum acting as a p-type doping element with respect to silicon as a semiconductor substrate, and the p ⁺ type region 7 is formed on the back surface side surface portion of the silicon substrate. This p ⁺ -type region 7 is also called a BSF (Back Surface Field) region and serves to reduce the rate at which photogenerated electron carriers reach the back collector 8 and recombine loss, thereby improving the photocurrent density Jsc. . Since minority carriers (electrons) Density This p ⁺ -type region 7 is reduced, and serves to reduce the diode current amount in the area in contact with the p ⁺ -type region 7 and the rear surface collector electrode 8 (dark current quantity) The open circuit voltage Voc is improved.

  Here, as shown in FIG. 1 (b), in the surface collecting electrode according to the present invention, the surface collecting electrode (finger electrode 2 in the example shown in FIG. 1 (b)) of the solar cell element 10 and the semiconductor region 3. Has a contact portion 2a, and a plane J that is substantially perpendicular to the current direction I flowing through the collector electrode intersects with the contour line 2b of the contact portion 2a between the collector electrode and the reverse conductivity type region 4 at the current. Concave and convex bends are provided on at least a part of a locus line when moving continuously in the direction I (in the example of this drawing, coincides with the contour line 2b). Thus, by providing the contour line 2b of the contact portion 2a with a concavo-convex bend, the contact resistance (contact resistance) between the collector electrode and the semiconductor region 3 can be reduced.

The reason will be discussed below. FIG. 6 schematically shows a current path in the finger electrode 2 (especially its edge portion). In FIG. 6, 2 is a finger electrode, 3 is a semiconductor region, 4 is a reverse conductivity type region, 5 is a p-type bulk region, 6 is an antireflection film, and 7 is a p ⁺ -type region.

In FIG. 6, the electrons and hole carriers generated mainly in the p-type bulk region 5 are separated by the pn junction, and the electron carriers are swept into the reverse conductivity type region 4 (the hole carriers are swept up to the p ⁺ region side. The arrows indicate that the swept-up electron carriers flow in the reverse conductivity type region 4 in the lateral direction (direction horizontal to the substrate surface) and flow into the finger electrode 2 as an electron current. Here, as also shown in the figure, the electron current tends to flow near the edge of the finger electrode 2. The degree of concentration is determined by the magnitude relationship between the sheet resistance of the reverse conductivity type region 4 and the contact resistance of the collector electrode / reverse conductivity type region 4. That is, when considering an arbitrary current path where the position where electrons flow from the reverse conductivity type region 4 to the finger electrode 2 (position where the electrons cross the interface between the two) is considered, the resistance due to the sheet resistance occupying the total resistance of the current path In contrast, if the resistance originating from the contact resistance is sufficiently small (usually greater or lesser, this condition is realized), the current flows through the path with the least resistance loss. As shown, it flows concentrated on the edge portion of the finger electrode 2. On the other hand, if the resistance due to contact resistance occupies the total resistance of the path is very large (in rare cases, such as a defective cell with poor contact characteristics), the degree of concentration of the electron current at the edge portion becomes weaker, and it extends over a wider contact range. (Not shown).

  Here, in this invention, as shown in FIG.1 (b), the uneven | corrugated-shaped bending is provided in at least one part of the locus line (outline 2b) mentioned above. With this configuration, as shown in FIG. 6, the length in the finger electrode line direction of the edge portion of the finger electrode, that is, the region (area) where the electron current of the electrode edge portion concentrates substantially flows. It is considered that the contact resistance (contact resistance) between the collector electrode and the semiconductor region 3 can be reduced as a result.

As for the case where the normal contact characteristics related to the present case are realized, the contact resistance Rc [Ω] depends on the surface contact resistance Rcs [Ω · cm ² ] and the contact area Sc [cm ² ] as follows. You can write
Rc = Rcs / Sc
Here, the contact area Sc is Sc = Wc × Dc by the contact width Wc (direction perpendicular to the paper surface in FIG. 6) and the contact depth Dc (direction parallel to the paper surface from the contact edge toward the inside of the finger electrode 2 in FIG. 6). If written, the previous equation is expressed as follows. Here, Dc corresponds to the effective contact width in FIG.
Rc = Rcs / (Wc × Dc)
That is, if Wc is increased, Rc can be reduced, and according to the present invention, this Wc can be effectively increased.

  In general, it is very difficult to know the value of Dc. In this case, it is convenient to discuss in units of [Ω · cm] using Rc × Dc instead of Rc. This is because it is possible to discuss the magnitude of the amount proportional to Rc with only measurable Rcs and Wc (Rcs can be easily measured by the four-probe measurement method). According to this, in the conventional structure in which the above-mentioned locus line (outline 2b) is not provided with uneven bending, it is estimated that the physical quantity of Rc × Dc is about 2 to 4 Ω · cm. This is about 0.2 to 0.00 in terms of conversion efficiency for a solar cell element having a conversion efficiency of about 15% using a polycrystalline silicon substrate used in a crystalline silicon module currently on the market. The loss amount is estimated to be about 3%. On the other hand, in the configuration in which the above-mentioned locus line (outline 2b) according to the present invention is provided with an uneven bend, the resistance of the contact portion is reduced by about 50% in the physical quantity of Rc × Dc. This is an improvement of about 0.1 to 0.15% over the conventional structure in terms of conversion efficiency.

  Next, a process for forming the solar cell element according to the present invention shown in FIG.

First, a p-type silicon substrate is prepared. In FIG. 2A, at least the p-type bulk region 5 is included in the substrate. At this time, it is desirable to use B (boron) as the p-type doping element, the concentration is about 1 × 10 ¹⁶ to 1 × 10 ¹⁷ / cm ^3, and the specific resistance value of the substrate is 0.2 to 2Ω · It becomes about cm.

  The substrate thickness is 500 μm or less, more preferably 350 μm or less. As the substrate, a polycrystalline silicon substrate or a single crystal silicon substrate obtained by slicing a polycrystalline silicon ingot cast by a casting method is used. In addition, doping may include an appropriate amount of a doping element alone at the time of manufacturing a silicon ingot, or may include an appropriate amount of a B-containing silicon block whose doping concentration is already known. Thereafter, in order to remove the mechanical damage layer on the surface layer portion of the substrate accompanying the slicing of the substrate, the surface layer portions on the front surface side and the back surface side of this substrate are each about 10 to 20 μm with NaOH, KOH, hydrofluoric acid, or hydrofluoric acid. Etching and then cleaning with pure water or the like.

  Next, a concavo-convex structure having a light reflectivity reduction function is formed on the surface side of the substrate serving as a light incident surface (not shown). In forming the concavo-convex structure, an anisotropic wet etching method using an alkaline solution such as NaOH used for removing the substrate surface layer portion described above can be applied, but the silicon substrate is a polycrystalline silicon substrate formed by a cast method or the like. In this case, since the crystal plane orientation in the substrate plane varies randomly for each crystal grain, it is very difficult to uniformly form a good concavo-convex structure that can effectively reduce the light reflectance over the entire substrate. It is. In this case, for example, by performing gas etching by the RIE (Reactive Ion Etching) method or the like, a good concavo-convex structure can be formed over the entire substrate relatively easily (for example, Patent Document 2, Patent Document 3, and Patent Document 4). Etc.)

Next, an n-type reverse conductivity type region 4 is formed. As the n-type doping element, P (phosphorus) is preferably used, the doping concentration is about 1 × 10 ^{18 to} 5 × 10 ²¹ / cm ³ , and the sheet resistance is an n ⁺ type having a sheet resistance of about 30 to 300 Ω / □. . As a result, a pn junction is formed between the p-type bulk region 5 described above.

As a manufacturing method, it is formed by diffusing a doping element in a surface layer portion of a p-type silicon substrate at a temperature of about 700 to 1000 ° C. using a thermal diffusion method using POCl ₃ (phosphorus oxychloride) as a diffusion source. At this time, the thickness of the diffusion layer is about 0.2 to 0.5 μm, and this can be set to a desired thickness by adjusting the diffusion temperature and the diffusion time.

In a normal diffusion method, a diffusion region is also formed on the surface opposite to the target surface, but this portion may be removed later by etching. At this time, the reverse conductivity type region 4 other than the surface side of the substrate is removed by applying a resist film on the surface side of the silicon substrate, removing the resist film by etching using a mixed solution of hydrofluoric acid and nitric acid. To do. Further, as will be described later, when the p ⁺ type region 7 (BSF region) on the back surface is formed with an aluminum paste, aluminum as a p-type dopant can be diffused to a sufficient depth at a sufficient concentration. The influence of the n-type diffusion layer in the shallow region that has already been diffused can be ignored, and it is not necessary to remove the n-type diffusion layer formed on the back side.

  Note that the method of forming the reverse conductivity type region 4 is not limited to the thermal diffusion method. For example, using a thin film technology and conditions, a crystalline silicon film including a hydrogenated amorphous silicon film or a microcrystalline silicon layer is used as a substrate temperature. You may form at about 400 degrees C or less. However, when forming using thin film technology, it is necessary to consider the temperature of each process described below and to determine the order of formation so that the process temperature is as low as the subsequent process.

  Here, when the reverse conductivity type region 4 is formed using a hydrogenated amorphous silicon film, the thickness is 50 nm or less, preferably 20 nm or less, and when it is formed using a crystalline silicon film, the thickness is 500 nm or less. The thickness is preferably 200 nm or less.

  When the reverse conductivity type region 4 is formed by the above thin film technology, if an i type silicon region (not shown) is formed with a thickness of 20 nm or less between the p type bulk region 5 and the reverse conductivity type region 4, the characteristics are improved. It is effective for.

Next, an antireflection film 6 is formed. As the material of the antireflection film 6, a Si ₃ N ₄ film, a TiO ₂ film, a SiO ₂ film, a MgO film, an ITO film, a SnO ₂ film, a ZnO film, or the like can be used. The thickness is appropriately selected depending on the material, and realizes the non-reflection condition for incident light (if the refractive index of the material is n and the wavelength of the spectral region to be non-reflection is λ, (λ / n) / 4 = d is (This is the optimum film thickness for the antireflection film). For example, in the case of a commonly used Si ₃ N ₄ film (n = about 2), if the non-reflection target wavelength is 600 nm, the film thickness may be about 75 nm.

As a manufacturing method, a PECVD method, a vapor deposition method, a sputtering method, or the like is used, and the film is formed at a temperature of about 400 to 500 ° C. The antireflection film 6 is patterned in a predetermined pattern in order to form the collector electrodes 1 and 2 described later. As a patterning method, an etching method (wet or dry) used for a mask such as a resist, or a method in which a mask is formed in advance when the antireflection film 6 is formed and the antireflection film 6 is formed and then removed can be used. As another method, a so-called fire-through method in which the electrode electrodes 1 and 2 and the reverse conductivity type region 4 are brought into contact with each other by applying and baking an electrode material directly on the antireflection film 6 is also common. There is no need for the patterning. This Si ₃ N ₄ film has a surface passivation effect during formation and a bulk passivation effect during subsequent heat treatment, and has the effect of improving the electrical characteristics of the solar cell element together with the antireflection function. is there.

  Next, a front surface electrode and a back side electrode are formed by applying a silver paste on the surface of the substrate and applying an aluminum paste and a silver paste on the back surface and baking (hereinafter referred to as a printing baking method).

First, as the back collector 8, an aluminum paste in which aluminum powder, an organic vehicle, and a glass frit are added in a paste form by adding 10 to 30 parts by weight and 0.1 to 5 parts by weight with respect to 100 parts by weight of aluminum, For example, it is baked by printing by a screen printing method and baking at 600-850 degreeC for about 1 to 30 minutes simultaneously after drying. At this time, p ⁺ -type region 7 (BSF region) is formed at the same time, which prevents aluminum from diffusing into the silicon substrate and recombining carriers generated on the back surface. At this time, the aluminum dope concentration in the p ⁺ type region is set to about 1 × 10 ^{18 to} 5 × 10 ²¹ / cm ³ . Note that B (boron) can also be used as the p-type doping element.

When the p ⁺ type region 7 is formed by using the printing and baking method, as described above, the n type region formed on the back side of the substrate simultaneously with the formation of the reverse conductivity type region 4 on the front side of the substrate. Can be eliminated.

Moreover, among the metal components in the paste not used in formation of the p ⁺ -type region 7 that remains on the p ⁺ -type region 7 can also be directly used as a part of the rear-side electrode, in this case the residual component Need not be removed with hydrochloric acid. In this specification, it is assumed that the back collector electrode 8 mainly composed of aluminum remaining on the p ⁺ type region 7 is present. However, when the back collector electrode 8 is removed, an alternative electrode material may be formed. As this alternative electrode material, it is desirable to use a silver paste that will be the back collector electrode 8 described later in order to increase the reflectance of long-wavelength light reaching the back surface.

The p ⁺ -type region 7 (back surface side) can be formed by a gas diffusion method instead of the printing and baking method. In this case, it is formed at a temperature of about 800 to 1100 ° C. using BBr ₃ as a diffusion source. At this time, a diffusion barrier such as an oxide film is formed in advance in the reverse conductivity type region 4 (surface side) already formed. In addition, when the antireflection film 6 is damaged by this process, this process can be performed before the antireflection film forming process. The doping element concentration is about 1 × 10 ^{18 to} 5 × 10 ²¹ / cm ³ . As a result, a Low-High junction can be formed between the p-type bulk region 5 and the p ⁺ -type region 7.

Further, the method for forming the p ⁺ -type region 7 is not limited to the printing and baking method or the gas diffusion method. For example, a hydrogenated amorphous silicon film or a crystalline silicon film containing a microcrystalline silicon phase is used by using a thin film technique. Or the like may be formed at a substrate temperature of about 400 ° C. or lower. At this time, the film thickness is about 10 to 200 nm. At this time, if an i-type silicon region (not shown) having a thickness of 20 nm or less is formed between the p ⁺ -type region 7 and the p-type bulk region 5, it is effective for improving the characteristics. However, when forming using thin film technology, it is necessary to consider the temperature of each process described below and to determine the order of formation so that the process temperature is as low as the subsequent process.

  Next, the surface collection electrodes 1 and 2 and the back surface output electrode 9 of the present invention are formed. These are obtained by adding silver powder, organic vehicle and glass frit to a paste form by adding 10 to 30 parts by weight and 0.1 to 5 parts by weight, respectively, with respect to 100 parts by weight of silver. After printing and drying, the printed surface is baked at 600 to 800 ° C. for about 1 to 30 minutes.

As these electrode materials, it is desirable to use a material containing at least one low-resistance metal such as silver, Cu, or aluminum, but silver is most preferable in terms of resistivity. As a manufacturing method, vacuum film forming methods such as a sputtering method and a vapor deposition method can be used in addition to a printing and baking method using a paste containing these metals. In particular, in the printing and baking method using a paste, the metal-containing paste to be the collector electrodes 1 and 2 is directly printed on the antireflection film 6 by the so-called fire-through method without patterning the antireflection film 6 and is fired. By doing so, electrical contact can be made between the collector electrodes 1 and 2 and the reverse conductivity type region 4, which is very effective in reducing the manufacturing cost. The formation of the collector electrodes 1 and 2 may be performed prior to the formation of the p ⁺ -type region 7 on the back surface side.

Furthermore, in order to particularly increase the bonding strength between the electrode and the semiconductor region, the paste and the printing and baking method include a slight amount of an oxide component such as TiO ₂ in the paste, and in the vacuum film forming method, the electrode and the semiconductor region are separated from each other. A metal layer mainly composed of Ti may be inserted at the interface. In the case of the back side electrode, it is desirable that the Ti main component metal layer has a thickness of 5 nm or less and suppresses a reduction in reflectance due to the insertion of the metal layer. The back surface collecting electrode 8 is preferably formed on the entire back surface of the substrate in order to increase the reflectance of long-wavelength light reaching the back surface.

  In addition, since the back surface collecting electrode 8 and the back surface output electrode 9 are overlapped and thickened, the back surface collecting electrode 8 does not cover the back surface output electrode 9 as much as possible after the back surface output electrode 9 for output extraction is formed. Thus, it is desirable to form in such a state that conduction can be obtained. Note that the order of forming the back output electrode 9 and the back collector 8 may be reversed. In addition, the back side electrode may not have the above-described structure, and may have a structure composed of a bus bar portion and a finger portion mainly composed of silver, similar to the surface collection electrode.

  In the photoelectric conversion device according to the present invention, as shown in FIG. 1B, the outer electrode 2b of the reverse conductivity type region 4 and the contact portion 2a of the current collector electrode is arranged in the current direction. Concave and convex bends are provided on at least a part of a continuous locus line formed in the direction I by a point that intersects a plane J substantially perpendicular to I. Specifically, for example, when a printing baking method using paste is used, a predetermined opening pattern is formed so that the outline 2b of the contact portion 2a has a zigzag shape as shown in FIG. Screen printing may be performed using a screen and baked as described above. In this way, as already described, the length of the outline 2b of the contact portion 2a of the current collecting electrode is increased, and the substantial contact area with the reverse conductivity type area 4 is increased. Can be reduced.

  Finally, a solder region is formed on the front electrode and the back electrode by a solder dipping process as necessary (not shown). In addition, when it is set as the solderless electrode which does not use a solder material, a solder dipping process is abbreviate | omitted.

  Thus, the solar cell element of the present invention is realized.

  In addition, since the solar cell element formed in this way usually has a small electrical output generated by one solar cell element, it is generally used as a solar cell module in which a plurality of solar cell elements are connected in series and parallel. . Further, by combining a plurality of the solar cell modules, a practical electrical output can be taken out.

  Here, the structure of the solar cell module according to the present invention and the process for forming the solar cell module will be described with reference to FIG.

  As the translucent panel 12, glass, polycarbonate resin, or the like is used. As the glass, white plate glass, tempered glass, double tempered glass, heat ray reflective glass and the like are used, but generally white plate tempered glass having a thickness of about 3 mm to 5 mm is often used. In the case of a polycarbonate resin, a resin having a thickness of about 5 mm is often used.

  As the filler 13, a material having translucency, heat resistance, and electrical insulation is preferably used. In addition to an ethylene vinyl acetate copolymer (EVA) having a vinyl acetate content of 20 to 40%, polyvinyl butyral (PVB ) Etc. as a main component, and a sheet-like form having a thickness of about 0.4 to 1 mm is used. In the production of the solar cell module 17, the filler 13 is often arranged on both the front side and the back side of the solar cell element, and these are thermally cross-linked and fused to other members in the laminating step under reduced pressure. And integrate.

  The back surface protective material 14 is made of a weather-resistant fluorine-based resin sheet sandwiching an aluminum foil so as not to transmit moisture, a polyethylene terephthalate (PET) sheet deposited with alumina or silica, or the like.

  The tab 11 is made of, for example, a conductive material whose main component is copper foil and whose surface is coated with solder. This is cut into a predetermined length and used by soldering to the bus bar electrode 1 which is an output extraction electrode of the solar cell element 10 and the back output electrode 9 on the back side.

  To actually wire the tab 11, first, one end of the tab 11 is bonded to the bus bar electrode 1 of the solar cell element 10 by soldering with hot air or a hot plate. Subsequently, when the other end of the tab 11 is made into a module, it is soldered and bonded in the same manner to the back surface output electrode 9 on the back side of the adjacent solar cell element 10. In the case of parallel connection, the bus bar electrodes 1 of adjacent solar cell elements 10 may be bonded together. This is repeated to produce a solar cell element group in which a plurality of solar cell elements 10 are connected.

  In addition, although it will be effective if at least one solar cell element 10 of the present invention is included in the solar cell element group, in order to achieve the effect of the invention satisfactorily, the sun constituting the solar cell element group It is more desirable that all the battery elements are the solar battery element 10 of the present invention.

  The output wiring 15 transmits electrical output from the group of solar cell elements 10 connected by the tab 11 to the terminal of the terminal box 16, and is usually a copper foil having a thickness of about 0.1 mm to 0.5 mm and a width of about 6 mm. The whole surface of which is coated with a solder of about 20 to 70 μm is cut into a predetermined length and soldered to the electrodes of the solar cell element 10.

  Here, the translucent panel 12, the front-side filler 13, the solar cell element group in which the tab 11 and the output wiring 15 are connected to the plurality of solar cell elements 10, the back-side filler 13, and the back surface protective material. 14 laminates are bonded and integrated. That is, after setting the laminated body of each member in a device called a laminator that pressurizes while heating in a reduced pressure state, the pressure is reduced to about 50 to 150 Pa in order to remove the air inside the solar cell module 17, and 100 to 200 ° C. The pressure is applied while heating at a temperature of 15 minutes to 1 hour. As a result, the fillers 13 respectively arranged on the front side and the back side are softened and crosslinked and fused, so that the members can be bonded and integrated to produce the panel portion of the solar cell module 17.

  Furthermore, the terminal box 16 is attached to the back surface of the panel portion of the solar cell module 17 manufactured by the above-described method using an adhesive. The terminal box 16 is used to connect the output wiring 15 from the solar cell element 10 and a cable (not shown) for connecting to an external circuit, and is usually modified with a modified PPE resin in consideration of light resistance against ultraviolet rays and the like. Made in black. Further, the general size of the terminal box 16 is generally about 100 × 60 × 20 mm in a general solar cell module having an output of about 160 W.

  Usually, a module frame (not shown) is often provided for each side of the panel portion of the solar cell module 17. The module frame is often made by extrusion molding of aluminum, and the surface thereof is subjected to anodizing. And this module frame is inserted in each outer periphery side of the panel part of a solar cell, and each corner part is fixed with a bis | screw etc. By providing such a module frame, mechanical strength and weather resistance can be imparted, and the module can be easily handled when a solar cell module is installed.

  The solar cell module of this invention is implement | achieved by the above.

  Next, another embodiment of the electrode according to the present invention will be described.

  In the example shown in FIG. 1B, a triangular wave-like zigzag in which triangles are continuously formed is provided as an uneven bend provided in the outline 2b of the contact portion 2a where the collector electrode and the semiconductor region 3 are in contact with each other. However, for example, as shown in FIG. 3 (a), the outline 2b may be formed by intermittently attaching a triangle, or by a curved line as shown in FIG. 3 (b). Thus, the outline 2b can be formed by a polygon, a rectangle, a curve, or a combination thereof.

  Further, the shape of the outline of the contact portion 2a is the center line of the collector electrode that forms the contact portion 2a, and is asymmetric with respect to the center line that forms the same direction as the current direction I of the collector electrode. It is better to make it. For the sake of clarity, FIG. 4 shows the shape of the contact portion 2a between the finger electrode 2 and the semiconductor region 3 and the outline 2b of the collector electrode. In the example shown in FIG. 4A, the zigzag shape of the outline 2b and the outline 2b facing each other across the center line K in the same direction as the direction of current flow is in a phase-shifted state. Asymmetric positional relationship. In this way, a portion where the width of the finger electrode 2 is particularly narrow can be eliminated, so that it is very effective without increasing the line resistance of the finger electrode 2. Although the figure shows the case where the phase difference of the edge shape at the symmetrical position across the center line of the finger electrode 2 is a half cycle, the phase difference need not be limited to a half cycle, and the constricted portion of the finger electrode 2 is If it can be reduced, improvement in characteristics can be expected depending on the degree. Also in this case, not only the zigzag shape but also the polygon, rectangle, curve, or a combination thereof as shown in FIG. 4B and FIG. It can be formed to be asymmetric.

Further, as shown in FIG. 5, the area surrounded by the outline 2b of the contact portion 2a configured by the finger electrode 2 and the semiconductor region 3 being in contact is approximately S ₁ , and the outline 2b is approximately in the direction I of current flow. When cutting at a plurality of perpendicular surfaces, when the average value of the distance between two cutting intersections in each of the cutting surfaces is d ₁ and the length of the circumference of the outline 2b is L ₁ , these are It is desirable that the following relationship be satisfied.

0.5L ₁ (S ₁ · d ₁ ⁻¹ + d ₁ ) ⁻¹ > 1.2 (1)
The meaning of equation (1) will be described. In other words, the area S ₁ surrounded by the outline 2b of the contact portion 2a formed by the contact between the finger electrode 2 and the semiconductor region 3 is a plan view of the outline of the contact portion 2a from the vertical direction. It can be rephrased as the area of time. Therefore, assuming that the shape of the finger electrode 2 is a rectangular shape, 2 (S ₁ · d ₁ ⁻¹ + d ₁ ) is equal to the perimeter of the outer periphery of the rectangle. Accordingly, 0.5L ₁ (S ₁ · d ₁ ^-1 + d ₁ ) ^-1 obtained by dividing L ₁ by this has an outer contour line 2b (concave-convex bent portion) of the contact portion 2a according to the present invention. ) And the peripheral length when there is no uneven bending (in the case of a rectangular shape), this means that the ratio is longer due to the uneven bending. In the contact portion 2a of the finger electrodes 2 and the semiconductor region 3 mainly play a role of current collector Among thus particularly Table collector electrode, if the surrounding contour 2b length L ₁ has a rectangular having the same area Since the effective area of the contact portion 2a can be clearly increased and the contact resistance can be reduced by making the length of the outer circumference of the contact line 1.2 times or more, the output of the photoelectric conversion element Characteristics can be improved.

  In addition, as an upper limit of the ratio which should be lengthened by this uneven | corrugated-shaped bending, it is desirable to set it as 3-5, More desirably, it is 3. That is, in the case where the outline 2b has a two-dimensional structure, if the ratio is larger than the value, the line width of the concavo-convex convex portion is inevitably narrow so as not to increase the area of the surface collection electrode. Incurs problems such as over-cut lines. Further, when the outline 2b is formed in a three-dimensional structure reflecting the uneven structure on the surface of the semiconductor region under the collector electrode, when the ratio becomes larger than the value, the aspect ratio of the uneven structure on the semiconductor surface (the uneven height) In order to cope with an excessively large (concave / concave pitch), leakage tends to occur at the convex portion of the concave-convex structure. In the range shown above, these balances are taken and the effect of the invention is excellent.

In addition, when measuring the width | variety of the finger electrode 2, what is necessary is just to obtain | require these average values by equally dividing m in the length direction (m> = 6). For example, in the case of FIG. 5, which was cut into 6 equal portions at 5 points of d 1 _{1 to d} 1 _5, it may be the average of these five points and d _1.

  In the above description, the finger electrode 2 constituting the contact portion 2a in contact with the semiconductor region 3 as the collector electrode is connected to at least one end of the finger electrode 2 and has a line width larger than that of the finger electrode 2. In the example described above, the bus bar electrode 1 for output extraction is made thicker. Such a configuration is desirable because the light incident area of the photoelectric conversion device can be maximized and the resistance can be reduced to the maximum.

  In addition, it is not limited to the finger electrode to form the contact portion in contact with the semiconductor region as the collector electrode in this manner, and the bus bar electrode is also in contact with the semiconductor region in accordance with the present invention. If the contact portion is configured, it is desirable because a further excellent effect is obtained.

  Hereinafter, the preferable aspect of the bus-bar electrode 1 concerning this invention is demonstrated using FIG.

FIG. 9A is a view of the surface collecting electrode viewed from the light incident surface side of the solar cell element of the present invention, and shows a state in which one bus bar electrode is more than that in FIG. FIG. 9B is a partially enlarged view of a portion D in FIG.

In the case of FIG. 9, there are three portions excluding the finger electrodes 2 from the collector electrodes, that is, the bus bar electrodes 1, and as shown in FIG. 9B, these bus bar electrodes 1 and the semiconductor regions 3 (FIG. 2). (A) (shown in the cross-sectional structure diagram) is in contact with the contact portion 1a, the total length of the contact line 1a when viewed in plan is L ₂ , and the outline of the contact portion 1a is the light incident surface It is desirable that the following expression is established when the area when viewed in plan from the vertical direction is S ₂ and the area when the entire light incident surface is viewed in plan from the vertical direction of the light incident surface is S ₃ .

L ₂ > 5S ₃ ^1/2 (2)
0.015 <S ₂ / S ₃ <0.050 (3)
First, equation (2) will be described. Area when this, as shown in FIG. 9 (b), in a plan view the contact portion 1a, the sum L ₂ of the overall length of the outline 1b is a plan view of the entire light incident surface of the solar cell element It represents greater than 5 times the square root of S ₃ (1/2 power). The example shown in the figure is an enlarged view of a portion of the bus bar electrode 1, and the actual total length of the outer line extends over the entire length of the bus bar electrode 1, and further, the total sum of the lengths of the outer line is shown. L ₂ needs to summing by the amount of the number of the bus bar electrode.

  In the present invention, when the contact portion 1a is viewed in plan, the length of the outline 1b is substantially expanded (increase) the region (area) in which the electron current flows at the edge portion of the bus bar electrode 1 in a concentrated manner. ). This is the assumption already described in the description of FIG. As a result, the contact resistance (contact resistance) between the bus bar electrode 1 and the semiconductor region 3 can be reduced, and the conversion efficiency of the solar cell element can be increased.

The total L ₂ of the overall length of the outline, it is preferable greater than 5 times of the solar cell element of the light incident surface entire square root of the area S ₃ (1/2 power), which is 9 ( As shown in a), in the case of a substantially square solar cell element provided with a bus bar electrode 1 slightly smaller than the length of one side, this can be achieved by using three or more bus bar electrodes 1, but simply increasing the number. Simply blocking the light incident surface will reduce the amount of incident light. Therefore, (3) As shown in equation, the area S ₂ in a plan view the outline of the contact portions 1a from the vertical direction, for the area S ₃ Nino when the light incident surface in plan view, the ratio is It becomes smaller than 0.050 (5%). The reason why each of them is limited to “plan view” is to remove surface irregularities and undulations.

Area S ₂ in a plan view the outline of the contact portion 1a corresponds to the area of the bus bar electrode 1. This means that the conversion efficiency can be suppressed from being reduced by keeping this area smaller than the predetermined range with respect to the total area of the light incident surface. If the ratio is 0.015 (1.5%) or less, the conductive resistance increases because the width of the bus bar electrode 1 becomes narrow, which is not desirable.

  In addition, the effect by the above formula is exhibited well even when the shape of the solar cell element is irregular. The example shown in FIG. 10 shows an example of an irregularly shaped solar cell element. FIG. 10A is an example in which the finger electrodes 2 are provided in the longitudinal direction of the horizontally long solar cell element 10a and the bus bar electrode 1 is provided in the short direction, and FIG. 10B is the longitudinal direction of the vertically long solar cell element 10b. This is an example in which the bus bar electrode 1 is provided in the direction and the finger electrode 2 is provided in the short direction.

  For example, in the case of FIG. 10A, the length per bus bar electrode 1 is shortened, but the number of bus bar electrodes 1 is increased according to the equation (2). In the case of such a horizontally long solar cell element 10a, the length of the finger electrode 2 is increased, the resistance is increased, and the element characteristics are adversely affected. Thus, as shown in the equation (2), the bus bar electrode 1 By increasing the number, the distance from the finger electrode 2 to the bus bar electrode 1 can be shortened, and adverse effects due to the increase in resistance can be avoided.

  In the case of FIG. 10B, since the length per bus bar electrode 1 is increased, the number of bus bar electrodes 1 may be reduced according to the equation (2). is there. In the case of such a vertically long solar cell element 10a, since the length of the finger electrode 2 is shortened, even if the number of the bus bar electrodes 1 is small, the adverse effect due to the resistance of the finger electrode 2 is small.

  Thus, the bus bar electrode according to the present invention can be optimized in length and area by adopting the configuration according to the formulas (2) and (3), and thus the photoelectric conversion device ( The solar cell element) can obtain good conversion efficiency.

  If a large number of fine irregularities are provided in the semiconductor region 3 by gas etching such as RIE, the true outline is substantially more than the outline obtained by viewing the contact portion 1a in plan view. Since it becomes long, a higher effect can be obtained.

  It should be noted that the embodiment of the present invention is not limited to the above-described example, and it is needless to say that various modifications can be made without departing from the gist of the present invention.

  For example, in the above description, the example in which one end portion of the finger electrode 2 is connected substantially orthogonally to the bus bar electrode 1 for taking out the output has been described. The portion may be connected to the bus bar electrode 1 and have a closed shape. In addition, although the edge lines 2b of the contact portions 2a applied to the finger electrodes 2 have been described as examples having similar edge shapes, these shapes may not be similar.

  Further, although the example in which the surface collection electrode is substantially linear has been described, it may be substantially curved. The case where the semiconductor substrate is flat (in the case where the outline 2b has a two-dimensional structure) has been described as an example. However, the present invention is not limited to this. For example, the surface of the semiconductor substrate is formed in an uneven shape (for example, by alkali etching). Even if it is a pyramidal structure or a fine uneven shape formed by RIE processing) or a curved surface shape (for example, a spherical shape) (that is, even when the outline 2b has a three-dimensional structure) Needless to say, according to the configuration, the same effect can be obtained. In these cases, the direction in which the current flows and the contact portion 2a itself are substantially curved or curved according to the electrode shape. To obtain a direction substantially perpendicular to the direction in which the current flows, the direction in which the current flows is indicated. The curve may be in a direction perpendicular to the normal line at the desired portion.

  In the above description, the solar cell using the p-type silicon substrate has been described. However, when the n-type silicon substrate is used, the effect of the present invention can be obtained by the same process if the polarity in the description is reversed. be able to.

  In the above description, the case of single junction has been described. However, the present invention can be applied even to a multi-junction type in which a thin film junction layer made of a semiconductor multilayer film is stacked on a bulk substrate-use junction element. it can.

  Furthermore, in the above description, a polycrystalline silicon substrate using the casting method is taken as an example, but the substrate is not limited to the one based on the casting method, and need not be limited to polycrystalline silicon. Moreover, it is not limited to a semiconductor substrate, A semiconductor thin film may be sufficient. Further, the present invention is not limited to silicon materials and can be applied to general semiconductors. That is, the present invention can also be applied to compound-based and organic-based solar cells.

  In the above description, bulk silicon solar cells have been taken as examples. However, the present invention is not limited to these, and can be in any form without departing from the principles and objects of the invention. That is, a photoelectric conversion device including a semiconductor region having a light incident surface, which is disposed on the light incident surface that collects photogenerated carriers generated in the semiconductor region by light irradiation on the light incident surface as current. A substantially linear surface collection electrode, and a contact portion where the surface collection electrode and the semiconductor region are in contact with each other, and a contour line of the contact portion intersects the direction in which the current flows and a substantially vertical direction If it is provided with the contact part by which uneven | corrugated-shaped bending was provided in at least one part, it can apply to photoelectric conversion apparatuses generally, such as optical sensors other than a solar cell.

  Further, in the above description, the locus line (corresponding to the contour line in the above-described example) according to the photoelectric conversion device of the present invention is described as an example in which an uneven bend is provided. If at least a part of the line area includes a region where the tangential direction does not coincide with the current direction, the effect of the present invention is achieved. The region where the tangential direction and the current direction do not match includes, for example, a concave-convex bent portion or a transition portion from the convex portion to the concave portion in the example of the concave-convex shape.

  Hereinafter, the experimental result which investigated the relationship between the finger shape of a surface collection electrode and the characteristic is demonstrated about the bulk type crystalline silicon solar cell which is a photoelectric conversion apparatus produced along the above-mentioned embodiment. However, the present invention is not limited to these examples.

  As a substrate, a flat p-type polycrystalline silicon substrate having a size of 150 mm × 155 mm manufactured by a casting method was used, and a solar cell element was formed with the configuration shown in FIG.

  The surface collection electrode concerning the photoelectric conversion apparatus of this invention was printed and baked using the paste which has silver as a main component. 1, the length of the bus bar electrode 1 arranged symmetrically with respect to the vertical center line of the substrate when the orientation of the substrate is 150 mm in the vertical direction and 155 mm in the horizontal direction in FIG. 5 mm, the width of the bus bar electrode 1 is 2 mm, the distance between the center lines of the two bus bar electrodes 1 is 77.5 mm, and is arranged perpendicular to the bus bar electrode 1 (in the horizontal direction of the substrate) and symmetrical with respect to the vertical center line of the substrate. The length from one end of the finger electrode 2 to the other end of the finger electrode 2 (including the width of the bus bar electrode 1 that crosses halfway) is 152.8 mm, the average width of the finger electrodes 2 is 165 μm, and adjacent finger electrodes The average distance between the two centerlines was 2.38 mm. In addition, the average width of the finger electrode 2 is obtained by dividing the length from one end to the other end connected to the bus bar electrode 1 into 10 equal parts as described above, and obtaining the width at each position (9 points). Asked.

  Using this entire pattern as a common condition, an experiment was conducted to confirm the effect of the finger electrode shape shown in FIG. 1 (b), FIG. 3, and FIG.

First, when a concavo-convex bend is provided on the locus line of the photoelectric conversion device of the present invention as shown in FIG. 1B, that is, the outline 2 b of the finger electrode 2 and the contact portion 2 a of the semiconductor region 3. The experiment was conducted. The experimental results are shown in Table 1. Here, the uneven bending is such that the area ratio in the light incident surface of the collector electrode is substantially the same regardless of the shape conditions. Also, Table 1 shows uneven bending when the outer peripheral length 2b of the contact portion 2a of the finger electrode 2 is not an uneven bending (that is, when the outer peripheral length is normalized to 1). The ratio of the outer peripheral length corresponding to the degree of is shown. That is, as explained in claim 3 of the present invention,
0.5L ₁ (S ₁ · d ₁ ⁻¹ + d ₁ ) ⁻¹
Corresponds to the value represented by the formula. Here, the one-cycle distance of the concavo-convex bend is set to about 10 to 20 μm.

  From Table 1, it is clear that the characteristics are improved by the present invention. That is, it is considered that the contact resistance component is reduced and the characteristics are improved as a result of the substantial contact area being increased by providing an uneven bend in the outline 2b of the contact portion 2a of the finger electrode 2.

Next, an experiment for grasping the effect of the finger shape shown in FIG. 4 was performed. In Table 2, when the normalized outer peripheral length of the above-mentioned Table 1 is 1.4, as shown in FIG. 4, the finger electrode 2 is in a symmetrical position with the center line in the same direction as the current flowing direction. The experimental results when the phase of the edge shape of the concavo-convex bending is made asymmetric by shifting by half a cycle are shown.

  From Table 2, it is clear that the characteristic improvement effect is obtained by shifting the phase difference of the concave and convex shapes by a half cycle. That is, the phase difference of the concave and convex bends is shifted by a half cycle to make it asymmetric, so that the constricted portion of the finger electrode 2 is eliminated, the line resistance of the finger electrode 2 is effectively reduced, and the characteristics are improved. Conceivable.

  Next, an experiment was conducted to grasp the effect of the shape of the bus bar electrode shown in FIG.

  As a substrate, a flat p-type polycrystalline silicon substrate having a size of 150 mm × 150 mm manufactured by a casting method was used, and a solar cell element was formed with the configuration shown in FIG.

  The collector electrode according to the present invention was printed and fired using a paste mainly composed of silver. As a basic pattern of the surface electrode, the number of bus bar electrodes was three, and the dimensions shown below were used.

  The length of the bus bar electrode 1 is 148.8 mm, the width of the bus bar electrode 1 is 1.3 mm, and the width of the two bus bar electrodes 1 is one in the longitudinal center line of the substrate and two in line symmetry. The distance from one end of the substrate to the other end of the finger electrode 2 which is 50 mm in the distance between the center lines and is arranged perpendicularly to the bus bar electrode 1 (in the horizontal direction of the substrate) and symmetrical with respect to the vertical center line of the substrate. 149 mm, the width of the finger electrode 2 is 80 μm, and the average distance between the center lines of the adjacent finger electrodes 2 is 2.4 mm.

Also the length of the outline 1b in a plan view of the contact portion 1a from the vertical direction, for the area S _2, by photographing the solar cell element from the vertical direction, after the surface image was digitized electrode and the other by portion and is binarized by the threshold, as separated, it separates the location and the other locations of the electrodes to determine the length of the area S ₂ and the outer line 1b.

Incidentally, when the seek length of the aforementioned area S ₂ and the outer line 1b, the measurements are both performed t-test with significance level 0.05 as rejection test is confirmed the validity.

  Table 3 shows the results obtained by measuring various characteristics of this solar cell element. In addition, about the short circuit current value (Isc) and fill factor (FF) prescribed | regulated by JISC8913 (1998) as a characteristic of a solar cell, it measured based on this specification.

A similar experiment was performed on a polycrystalline silicon substrate (the area is the same as the above-mentioned 150 mm square) shown in FIGS. 10 (a) and 10 (b). In addition, about the bus-bar electrode 1, it was two types, three and four, in the case of a horizontally long shape, and two types, two and three, in the case of a vertically long shape.

  From Table 3, sample No. which satisfies the conditions of the formulas (2) and (3) of the present invention. 2-6, Sample No. Nos. 9 and 10 clearly showed the effect of improving the characteristics.

(A) is a figure which shows an example of the electrode shape by the side of the light-incidence surface (surface side) of the solar cell element which is an example of the photoelectric conversion apparatus concerning this invention, (b) is in A part of (a). It is the elements on larger scale when cut in the cross section of the BB direction of Fig.2 (a). (A) is a figure which shows the cross-section of the solar cell element which is an example of the photoelectric conversion apparatus concerning this invention, (b) is a figure which shows an example of the electrode shape of the non-light-incident surface side (back surface side). . (A), (b) is a figure which shows the example of embodiment of the contact part concerning this invention, and cut | disconnected by the BB direction cross section of Fig.2 (a) in the A section of Fig.1 (a). FIG. (A), (b), (c) is a figure which shows the example of embodiment of the contact part concerning this invention, and is a BB direction of FIG. 2 (a) in the A section of FIG. 1 (a). It is the elements on larger scale when cut in a cross section. It is a figure for demonstrating a preferable aspect in the dimension structure of the finger electrode concerning this invention. It is a figure which shows typically the electric current path | route in a common finger electrode (especially the edge part). The general structure of a bulk type silicon solar cell is shown, (a) is a cross-sectional structure diagram, (b) is a top view of the collector electrode from the light incident surface (surface) side, and (c) is It is the elements on larger scale of the C section of (b). It is a figure which shows the cross-section of the solar cell module of this invention. (A), (b) is a figure for demonstrating a preferable aspect in the dimension structure of the bus-bar electrode concerning this invention, (b) is the elements on larger scale of the D section of (a). (A), (b) is a figure which shows the bus-bar electrode concerning this invention in the solar cell element of an irregular shape.

Explanation of symbols

1: Bus bar electrode as a collection electrode 1a: Contact portion 1b: Outline line 2: Finger electrode as a collection electrode 2a: Contact portion 2b: Outline line 3: Semiconductor region 4: Reverse conductivity type region 5: p-type bulk region 6: Antireflection film 7: p ⁺ type region 8: Back collector electrode 9: Back output electrode 10: Solar cell element

Claims (4)

A semiconductor region having a light incident surface;
A substantially linear surface collection electrode disposed on the light incident surface for collecting, as an electric current, photogenerated carriers generated in the semiconductor region by light irradiation on the light incident surface;
A contact portion where the surface collection electrode and the semiconductor region are in contact,
The surface electrode includes a finger electrode and a bus bar electrode for output extraction, to which at least one end of the finger electrode is connected and the line width is wider than the finger electrode,
The direction of the current flowing through the finger electrode is the same direction as the center line of the outline of the contact part,
Including a region where the tangential direction of the outline and the current direction do not match,
Wherein in the region contour has a concave convex bending, concave convex bending, a photoelectric conversion device which is asymmetric across the center line. The contact portion is configured such that the finger electrode of the collector electrode and the semiconductor region are in contact with each other,
The area surrounded by the outline of the contact portion is S ₁ , and the outline of the contact portion is cut by a plurality of cut planes substantially perpendicular to the direction of current flowing through the finger electrodes. 2 having at least one finger electrode having a relationship of the following formula, where d _{1 is} an average value of distances between two intersections in L, and L ₁ is an overall length of the outline of the contact portion: The photoelectric conversion device described.
5L ₁ (S ₁ · d ₁ ⁻¹ + d ₁ ) ⁻¹ > 1.2 (1) The solar cell element using the photoelectric conversion apparatus of Claim 1 or Claim 2 . 4. A solar cell module having a plurality of plate-like solar cell elements arranged at predetermined intervals and electrically connected to each other, wherein the plurality of solar cell elements are solar cells according to claim 3. A solar cell module including an element.

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