JP4587380B2 - High frequency switch parts - Google Patents

Description

  The present invention relates to a high-frequency component used in communication equipment such as a mobile phone, and more particularly to a high-frequency switch that switches a path of a high-frequency signal.

There is a high-frequency switch as one of high-frequency components used in transmission / reception circuits such as mobile phones and automobile phones used in the microwave band and UHF band. For example, as shown in FIG. 10, the high frequency switch disclosed in Patent Document 1 includes switching elements D1 and D2 (diodes) arranged between a transmission circuit and an antenna, and an antenna ANT and a reception circuit RX. The λ / 4 phase line L2 is disposed. Since the receiving circuit RX side of the λ / 4 phase line L2 is grounded via the diode D2, this high frequency switch operates as a λ / 4 type switch that switches a signal path by a bias current flowing through each of the diodes D1 and D2. To do.
In order to reduce the size of such a high frequency switch, for example, as disclosed in Patent Document 2, a capacitor electrode and a coil electrode are formed on a dielectric layer, and a switching element is mounted on a multilayer ceramic multilayer substrate. The
Japanese Patent Laid-Open No. 2-108301 Japanese Patent Application Laid-Open No. 6-197040

In the high frequency switch disclosed in Patent Document 2, a plurality of external terminals are formed on the outer surface of the ceramic multilayer substrate to connect to the line pattern of the mounting substrate. The external terminals include capacitor electrodes, coil electrodes, and switching elements. Connected appropriately. The external terminals include a terminal for connecting to an antenna, a transmission circuit, and a reception circuit, and a terminal for taking a ground potential. How to arrange and configure these terminals on the ceramic multilayer substrate is often specified by the user. That is, despite the parts having the same function, it is necessary to provide different users with different terminal arrangements, resulting in an increase in cost.
Accordingly, an object of the present invention is to provide a high-frequency switch component in which a plurality of terminal arrangements can be realized using the same ceramic multilayer substrate by replacing the functions of a part of the external terminals by a simple method. .

The present invention is a high-frequency switch component in which a plurality of reactance elements and switching elements are mounted on an insulating substrate having a plurality of external terminals functioning as an earth port or a high-frequency signal port, and the high-frequency component includes three ports. An LC circuit including a circuit unit, a first reactance element connected to the first port and a second reactance element connected to the second port is formed in the circuit unit , and the first reactance element and the second reactance element Each of the reactance elements is configured to be connected to the third port without passing through another reactance element, and a switching element is further connected to the third port, and the first reactance element and the second reactance element are connected to each other. An element having a function different from that of a reactance element, selected from an inductance element or a capacitance element. The inductance element is a chip part or an air-core coil, and the capacitance element is a chip part, and the external terminal serving as the first port and the second port is electrically connected to another external terminal serving as a ground port. Without having, based on the selection, by mounting the inductance element and the capacitance element on an insulating substrate, the function of the first port and the second port can be replaced with a ground port or a high-frequency signal port, The high-frequency switch component is characterized in that a port connected to the inductance element is an earth port, and a port connected to the capacitance element is an antenna-side port .

In the present invention, it is preferable that the external terminals to be the first port and the second port are arranged side by side with another external terminal on one side of the insulating substrate .

According to the present invention, the inductance element is a chip component or an air-core coil, and the capacitance element is mounted as a chip component on an insulating substrate, and connected to the third port without passing through another reactance element . A predetermined position of the insulating substrate, by whether to implement the inductance elements and the capacitance elements, it is Ru can to enable functions interchanged the said first port the second port in the same insulating substrate. For this reason, it is possible to provide a high-frequency switch component at a low price because the preparation of an insulating substrate corresponding to the terminal arrangement is reduced in configuring a high-frequency switch component having a different terminal arrangement .

A high-frequency switch component according to an embodiment of the present invention will be described in detail below.
FIG. 1 is an equivalent circuit of an LC circuit for enabling the function of a port to be interchanged in a high-frequency switch component according to the present invention. The LC circuit includes a first port connected to the inductance element L1, a second port connected to the capacitance element, and a third port connected to the switching element. FIG. 2 is an equivalent circuit of an SPDT switch SW (diode switch) using the circuit shown in FIG. 1, and FIG. 3 is formed by forming the diode switch of FIG. It is a perspective view of the high frequency switch component comprised by the electrode pattern.

This diode switch is connected to the transmission side circuit TX, the antenna side circuit ANT, and the reception side circuit RX, and is connected to the transmission side circuit TX and the antenna side circuit ANT, and the reception side circuit RX and the antenna side circuit ANT This is a diode switch for switching the connection.
A first diode D1 having a cathode connected to the first port P1 side connected to the transmission side circuit TX and an anode connected to the fourth port P4 side connected to the antenna side circuit ANT; A first inductance element L1 connected to the cathode of one diode D1 and connected to the second port P2 whose other end is grounded, and a fifth port P5 connected to the fourth port P4 and the receiving circuit RX. A second inductance element L2 connected between the second inductance element and a second inductance element connected to the sixth port P6 side of which the cathode is connected to the fifth port side of the second inductance element and the anode is grounded. A diode D2 is provided, and a control circuit VC is connected to the anode side of the second diode D2. The first port P1, the fourth port P4, the fifth port P5, the sixth As DC-cut capacitors to over preparative P6, the capacitance elements C1, C2, C3, C5 are connected. Here, the circuit shown in FIG. 1 is configured as an LC circuit 100 including an inductance element L1 and a capacitance element C1 surrounded by a broken line.

  The inductance element L1, the capacitance elements C1, C2, and C5 are mounted on the insulating substrate 200 as chip components such as a chip inductor and a chip capacitor. And configured as a capacitor electrode. The chip inductor is a laminated inductor or an inductor in which a wire is wound around a magnetic core or a winding is formed by filling a conductor by forming a groove in the magnetic core. An air-core coil may be used. Then, external terminals ANT, TX, RX, GND, and VC for connecting to the circuit board are formed on the outer surface of the insulating substrate 200. The external terminals are shown in the equivalent circuit of FIG. It corresponds to the port.

A characteristic part of the diode switch in FIG. 2 is that in the LC circuit 100 indicated by a broken line frame, the inductance element L1 and the capacitance element C1 are chip parts, respectively, for mounting the chip parts formed on the main surface of the insulating substrate. The first port P1 to which the capacitance element C1 is connected and the second port P2 to which the inductance element L1 is connected are connected to the electrode pattern and connected by connection means such as connection lines and via holes formed on the insulating substrate. Each has no electrical connection with other ports and is configured independently.
In the diode switch of FIG. 2, the first port P1 is a port connected to the transmission side circuit TX, and the second port P2 is a port connected to the ground potential. However, the mounting portions of the inductance element L1 and the capacitance element C1 are interchanged. Thus, as in the equivalent circuit shown in FIG. 4, the first port P1 can be a port connected to the ground potential, and the second port P2 can be a port connected to the transmission side circuit TX. That is, in the high-frequency component, the functions of the external terminals can be easily replaced, and two types of external terminal arrangements can be realized with a common insulating substrate.

5 and 6 are equivalent circuits of a high-frequency switch component according to another embodiment of the present invention.
This high-frequency switch component is also a diode switch, and the connection direction of the diode is different from that of FIGS. A first diode D1 having an anode connected to the first port P1 side, a cathode connected to the fourth port P4 side, one end connected to the anode of the first diode D1, and the other end grounded. A first inductance element L1 connected to the second port P2, a second inductance element L2 connected between the fourth port P4 and the fifth port P5, and the fifth inductance element of the second inductance element. A second diode D2 connected to the sixth port P6 side having an anode connected to the port side and a cathode grounded is provided, and a control circuit VC is connected to the anode side of the first diode D1, Capacitance elements C1, C2, C3, and C5 are connected to the port P1, the fourth port P4, the fifth port P5, and the sixth port P6 as DC cut capacitors. , The resistance element R is connected in parallel to said capacitance element C3.

  In the diode switch of FIG. 5, the first port P1 is a port connected to the transmission side circuit TX, and the second port P2 is a port connected to the control circuit VC. Thus, as in the equivalent circuit shown in FIG. 6, the first port P1 can be a port connected to the control circuit VC, and the second port P2 can be a port connected to the transmission side circuit TX.

FIG. 7 is an equivalent circuit of a high-frequency switch component according to another embodiment of the present invention, which is an SP3T switch. In this embodiment, diodes D1. An LC circuit 100 is connected to D3. With this configuration, four types of external terminal arrangements can be realized with a common insulating substrate.

FIG. 8 and FIG. 9 show high-frequency switch components formed by combining a switch using GaAsFET or GaNFET as a switching element and the LC circuit 100. The LC circuit functions as a matching circuit between the antenna side circuit and the switch. The inductance element L1 connected to the ground potential absorbs the electrostatic surge so that the FET switch is not destroyed. In the FET switch of FIG. 8, the first port P1 is a port connected to the antenna side circuit ANT, and the second port P2 is a port connected to the ground potential. However, the mounting portion of the inductance element L1 and the capacitance element C1 is exchanged. Thus, as in the equivalent circuit shown in FIG. 9, the first port P1 can be a port connected to the ground potential, and the second port P2 can be a port connected to the antenna side circuit ANT.

According to the present invention, the inductance element is a chip component or an air-core coil, the capacitance element is a chip component, each mounted on an insulating substrate, and connected to the third port without passing through another reactance element. The functions of the first port and the second port can be interchanged by an easy method of exchanging the element and the capacitance element.

FIG. 3 is an equivalent circuit diagram of an LC circuit for enabling the port function to be interchanged in the high-frequency component according to the present invention. It is an equivalent circuit diagram of the high frequency component according to the present invention. 1 is an external perspective view of a high frequency component according to the present invention. FIG. 6 is another equivalent circuit diagram of the high-frequency component according to the present invention. FIG. 6 is another equivalent circuit diagram of the high-frequency component according to the present invention. FIG. 6 is another equivalent circuit diagram of the high-frequency component according to the present invention. FIG. 6 is another equivalent circuit diagram of the high-frequency component according to the present invention. FIG. 6 is another equivalent circuit diagram of the high-frequency component according to the present invention. FIG. 6 is another equivalent circuit diagram of the high-frequency component according to the present invention. It is an equivalent circuit diagram of the conventional high frequency component.

Claims (2)

A high-frequency switch component in which a plurality of reactance elements and switching elements are mounted on an insulating substrate having a plurality of external terminals that function as a ground port or a high-frequency signal port,
The high-frequency component includes a circuit unit including three ports, and an LC circuit including a first reactance element connected to the first port and a second reactance element connected to the second port is formed in the circuit unit. wherein each of the first reactance element and the second reactance element is configured to be connected to the third port to each other not through the other of the reactance element, the third port is further connected switching elements ,
The first reactance element and the second reactance element are elements having different functions, and are selected from an inductance element or a capacitance element. The inductance element is a chip component or an air-core coil, and the capacitance element is a chip component. And
The external terminal serving as the first port and the second port does not have electrical connection with other external terminals serving as a ground port,
Based on the selection, by mounting the inductance element and the capacitance element on an insulating substrate, the function of the first port and the second port can be replaced with a ground port or a high-frequency signal port ,
A high-frequency switch component comprising: a port connected to the inductance element as a ground port; and a port connected to the capacitance element as an antenna-side port . 2. The high-frequency switch component according to claim 1, wherein the external terminals to be the first port and the second port are arranged side by side with another external terminal on one side of the insulating substrate .

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