JP4579423B2 - 試料を非破壊計測するためのシステム - Google Patents
試料を非破壊計測するためのシステム Download PDFInfo
- Publication number
- JP4579423B2 JP4579423B2 JP2000617398A JP2000617398A JP4579423B2 JP 4579423 B2 JP4579423 B2 JP 4579423B2 JP 2000617398 A JP2000617398 A JP 2000617398A JP 2000617398 A JP2000617398 A JP 2000617398A JP 4579423 B2 JP4579423 B2 JP 4579423B2
- Authority
- JP
- Japan
- Prior art keywords
- sample
- frequency
- radiation
- dopant
- change
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005259 measurement Methods 0.000 title claims description 21
- 239000000523 sample Substances 0.000 claims description 123
- 230000008859 change Effects 0.000 claims description 41
- 239000002019 doping agent Substances 0.000 claims description 41
- 230000010287 polarization Effects 0.000 claims description 38
- 230000005855 radiation Effects 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 17
- 230000001066 destructive effect Effects 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 18
- 239000000463 material Substances 0.000 description 10
- 238000009826 distribution Methods 0.000 description 9
- 230000000704 physical effect Effects 0.000 description 8
- 238000002310 reflectometry Methods 0.000 description 7
- 238000012545 processing Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 238000001514 detection method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005316 response function Methods 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 229910052724 xenon Inorganic materials 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000000572 ellipsometry Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000000711 polarimetry Methods 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- 229910015900 BF3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004980 dosimetry Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003736 xenon Chemical class 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
- G01N21/211—Ellipsometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0641—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization
- G01B11/065—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization using one or more discrete wavelengths
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J4/00—Measuring polarisation of light
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Spectrometry And Color Measurement (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/310,017 | 1999-05-11 | ||
| US09/310,017 US6268916B1 (en) | 1999-05-11 | 1999-05-11 | System for non-destructive measurement of samples |
| PCT/US2000/012008 WO2000068656A1 (en) | 1999-05-11 | 2000-05-03 | System for non-destructive measurement of samples |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002544501A JP2002544501A (ja) | 2002-12-24 |
| JP2002544501A5 JP2002544501A5 (enExample) | 2007-07-19 |
| JP4579423B2 true JP4579423B2 (ja) | 2010-11-10 |
Family
ID=23200636
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000617398A Expired - Fee Related JP4579423B2 (ja) | 1999-05-11 | 2000-05-03 | 試料を非破壊計測するためのシステム |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US6268916B1 (enExample) |
| JP (1) | JP4579423B2 (enExample) |
| WO (1) | WO2000068656A1 (enExample) |
Families Citing this family (72)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6049220A (en) * | 1998-06-10 | 2000-04-11 | Boxer Cross Incorporated | Apparatus and method for evaluating a wafer of semiconductor material |
| US6885444B2 (en) * | 1998-06-10 | 2005-04-26 | Boxer Cross Inc | Evaluating a multi-layered structure for voids |
| US6323951B1 (en) * | 1999-03-22 | 2001-11-27 | Boxer Cross Incorporated | Apparatus and method for determining the active dopant profile in a semiconductor wafer |
| US6535285B1 (en) | 2000-02-08 | 2003-03-18 | Therma-Wave, Inc. | Combination thermal wave and optical spectroscopy measurement system |
| US6532076B1 (en) * | 2000-04-04 | 2003-03-11 | Therma-Wave, Inc. | Method and apparatus for multidomain data analysis |
| US6583875B1 (en) * | 2000-05-19 | 2003-06-24 | Therma-Wave, Inc. | Monitoring temperature and sample characteristics using a rotating compensator ellipsometer |
| FR2811761B1 (fr) * | 2000-07-17 | 2002-10-11 | Production Rech S Appliquees | Ellipsometre a haute resolution spatiale fonctionnant dans l'infrarouge |
| US6532070B1 (en) | 2000-07-17 | 2003-03-11 | Therma-Wave, Inc. | Method for determining ion concentration and energy of shallow junction implants |
| US7349090B2 (en) | 2000-09-20 | 2008-03-25 | Kla-Tencor Technologies Corp. | Methods and systems for determining a property of a specimen prior to, during, or subsequent to lithography |
| US6891627B1 (en) | 2000-09-20 | 2005-05-10 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension and overlay of a specimen |
| US7139083B2 (en) | 2000-09-20 | 2006-11-21 | Kla-Tencor Technologies Corp. | Methods and systems for determining a composition and a thickness of a specimen |
| US7099005B1 (en) | 2000-09-27 | 2006-08-29 | Kla-Tencor Technologies Corporation | System for scatterometric measurements and applications |
| US6900892B2 (en) * | 2000-12-19 | 2005-05-31 | Kla-Tencor Technologies Corporation | Parametric profiling using optical spectroscopic systems |
| US7230708B2 (en) * | 2000-12-28 | 2007-06-12 | Dmitri Olegovich Lapotko | Method and device for photothermal examination of microinhomogeneities |
| IL147788A (en) * | 2001-01-24 | 2008-11-03 | Eitan Zeiler | Emissivity-independent silicon surface temperature measurement |
| US6812717B2 (en) * | 2001-03-05 | 2004-11-02 | Boxer Cross, Inc | Use of a coefficient of a power curve to evaluate a semiconductor wafer |
| WO2002095372A1 (en) * | 2001-05-22 | 2002-11-28 | Horiba, Ltd. | Thin-film characteristic measuring method using spectroellipsometer |
| US6583876B2 (en) | 2001-05-24 | 2003-06-24 | Therma-Wave, Inc. | Apparatus for optical measurements of nitrogen concentration in thin films |
| EP1435517B1 (en) * | 2001-09-06 | 2011-06-15 | Horiba, Ltd. | Method for analyzing thin-film layer structure using spectroscopic ellipsometer |
| US6940592B2 (en) * | 2001-10-09 | 2005-09-06 | Applied Materials, Inc. | Calibration as well as measurement on the same workpiece during fabrication |
| WO2003034008A1 (en) * | 2001-10-15 | 2003-04-24 | The Regents Of The University Of California | Methods and apparatus for measuring refractive index and optical absorption differences |
| WO2003054475A2 (en) * | 2001-12-19 | 2003-07-03 | Kla-Tencor Technologies Corporation | Parametric profiling using optical spectroscopic systems |
| US6917039B2 (en) * | 2002-02-13 | 2005-07-12 | Therma-Wave, Inc. | Method and system for combined photothermal modulated reflectance and photothermal IR radiometric system |
| US7061627B2 (en) * | 2002-03-13 | 2006-06-13 | Therma-Wave, Inc. | Optical scatterometry of asymmetric lines and structures |
| US6989899B2 (en) * | 2002-03-18 | 2006-01-24 | Therma-Wave, Inc. | Ion implant monitoring through measurement of modulated optical response |
| US20030184769A1 (en) * | 2002-03-27 | 2003-10-02 | Houge Erik Cho | Patterned implant metrology |
| US6825933B2 (en) * | 2002-06-07 | 2004-11-30 | N&K Technology, Inc. | Computer-implemented reflectance system and method for non-destructive low dose ion implantation monitoring |
| US6963393B2 (en) * | 2002-09-23 | 2005-11-08 | Applied Materials, Inc. | Measurement of lateral diffusion of diffused layers |
| US6878559B2 (en) * | 2002-09-23 | 2005-04-12 | Applied Materials, Inc. | Measurement of lateral diffusion of diffused layers |
| US7126690B2 (en) * | 2002-09-23 | 2006-10-24 | Therma-Wave, Inc. | Modulated reflectance measurement system using UV probe |
| US6885467B2 (en) * | 2002-10-28 | 2005-04-26 | Tevet Process Control Technologies Ltd. | Method and apparatus for thickness decomposition of complicated layer structures |
| US7525659B2 (en) * | 2003-01-15 | 2009-04-28 | Negevtech Ltd. | System for detection of water defects |
| US7486861B2 (en) * | 2003-01-15 | 2009-02-03 | Negevtech Ltd. | Fiber optical illumination system |
| US6892013B2 (en) * | 2003-01-15 | 2005-05-10 | Negevtech Ltd. | Fiber optical illumination system |
| US7069153B2 (en) * | 2003-01-28 | 2006-06-27 | Therma-Wave, Inc. | CD metrology method |
| US6952261B2 (en) * | 2003-03-31 | 2005-10-04 | Therma-Wave, Inc. | System for performing ellipsometry using an auxiliary pump beam to reduce effective measurement spot size |
| US7233390B2 (en) * | 2003-03-31 | 2007-06-19 | Therma-Wave, Inc. | Scatterometry for samples with non-uniform edges |
| US20040253751A1 (en) * | 2003-06-16 | 2004-12-16 | Alex Salnik | Photothermal ultra-shallow junction monitoring system with UV pump |
| US20050196826A1 (en) * | 2004-03-05 | 2005-09-08 | Sherrill James V. | Self calibrating detection |
| US7026175B2 (en) * | 2004-03-29 | 2006-04-11 | Applied Materials, Inc. | High throughput measurement of via defects in interconnects |
| US7029933B2 (en) * | 2004-06-22 | 2006-04-18 | Tech Semiconductor Singapore Pte. Ltd. | Method for monitoring ion implant doses |
| WO2006006148A2 (en) * | 2004-07-12 | 2006-01-19 | Negevtech Ltd. | Multi mode inspection method and apparatus |
| US20060012781A1 (en) * | 2004-07-14 | 2006-01-19 | Negevtech Ltd. | Programmable spatial filter for wafer inspection |
| US7397596B2 (en) * | 2004-07-28 | 2008-07-08 | Ler Technologies, Inc. | Surface and subsurface detection sensor |
| US7379185B2 (en) | 2004-11-01 | 2008-05-27 | Applied Materials, Inc. | Evaluation of openings in a dielectric layer |
| US7206070B2 (en) * | 2004-11-15 | 2007-04-17 | Therma-Wave, Inc. | Beam profile ellipsometer with rotating compensator |
| US7633627B2 (en) | 2005-01-20 | 2009-12-15 | Duke University | Methods, systems and computer program products for characterizing structures based on interferometric phase data |
| US7813541B2 (en) * | 2005-02-28 | 2010-10-12 | Applied Materials South East Asia Pte. Ltd. | Method and apparatus for detecting defects in wafers |
| US7804993B2 (en) * | 2005-02-28 | 2010-09-28 | Applied Materials South East Asia Pte. Ltd. | Method and apparatus for detecting defects in wafers including alignment of the wafer images so as to induce the same smear in all images |
| US20070171420A1 (en) * | 2005-12-22 | 2007-07-26 | Stmicroelectronics Sa | Pulsed ellipsometer device |
| US7499168B2 (en) * | 2006-02-14 | 2009-03-03 | Kla-Tencor Corp. | Combined modulated optical reflectance and electrical system for ultra-shallow junctions applications |
| US7557918B1 (en) | 2006-04-05 | 2009-07-07 | Itt Manufacturing Enterprises, Inc. | Spectral polarimetric image detection and analysis methods and apparatus |
| US8031931B2 (en) | 2006-04-24 | 2011-10-04 | Applied Materials South East Asia Pte. Ltd. | Printed fourier filtering in optical inspection tools |
| TWI420094B (zh) * | 2006-07-17 | 2013-12-21 | Xitronix Corp | 於半導體結構中應變及主動性摻雜物之光反射特徵的方法 |
| US7502104B2 (en) * | 2006-08-10 | 2009-03-10 | Kla-Tencor Corporation | Probe beam profile modulated optical reflectance system and methods |
| US7719674B2 (en) * | 2006-11-28 | 2010-05-18 | Applied Materials South East Asia Pte. Ltd. | Image splitting in optical inspection systems |
| US7714998B2 (en) * | 2006-11-28 | 2010-05-11 | Applied Materials South East Asia Pte. Ltd. | Image splitting in optical inspection systems |
| RU2353919C1 (ru) * | 2007-10-11 | 2009-04-27 | Институт физики полупроводников Сибирского отделения Российской академии наук | Эллипсометрический комплекс для высокотемпературных исследований |
| US8264693B2 (en) | 2007-12-06 | 2012-09-11 | The Regents Of The University Of Michigan | Method and system for measuring at least one property including a magnetic property of a material using pulsed laser sources |
| US8111399B2 (en) * | 2009-06-30 | 2012-02-07 | Kla-Tencor Corporation | System and method for performing photothermal measurements and relaxation compensation |
| US8804106B2 (en) * | 2011-06-29 | 2014-08-12 | Kla-Tencor Corporation | System and method for nondestructively measuring concentration and thickness of doped semiconductor layers |
| JP5591766B2 (ja) * | 2011-07-21 | 2014-09-17 | 株式会社神戸製鋼所 | イオン注入量測定装置およびイオン注入量測定方法 |
| US9400246B2 (en) | 2011-10-11 | 2016-07-26 | Kla-Tencor Corporation | Optical metrology tool equipped with modulated illumination sources |
| US9903806B2 (en) * | 2013-12-17 | 2018-02-27 | Nanometrics Incorporated | Focusing system with filter for open or closed loop control |
| US9772297B2 (en) * | 2014-02-12 | 2017-09-26 | Kla-Tencor Corporation | Apparatus and methods for combined brightfield, darkfield, and photothermal inspection |
| US9709437B2 (en) * | 2015-02-18 | 2017-07-18 | City University Of Hong Kong | System and method for detecting a defect in a structure member |
| US10928317B2 (en) * | 2016-06-22 | 2021-02-23 | University Of Virginia Patent Foundation | Fiber-optic based thermal reflectance material property measurement system and related methods |
| CN108107020B (zh) * | 2018-02-07 | 2023-09-19 | 中国工程物理研究院激光聚变研究中心 | 一种材料非线性折射率系数的测量装置及测量方法 |
| WO2019204140A1 (en) * | 2018-04-17 | 2019-10-24 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Rapid multiplexed infrared 3d nano-tomography |
| KR20220128342A (ko) * | 2019-12-05 | 2022-09-20 | 오로라 솔라 테크놀로지스 (캐나다) 인크. | 반도체 물질의 특성화 시스템 및 방법 |
| KR20230030346A (ko) * | 2021-08-25 | 2023-03-06 | 삼성전자주식회사 | 편광 계측 장치 및 편광 계측 장치를 이용한 반도체 소자 제조 방법 |
| IL315741A (en) * | 2022-03-20 | 2024-11-01 | נובה בע מ | Combination of photothermia and OCD for translucent structures |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4255971A (en) | 1978-11-01 | 1981-03-17 | Allan Rosencwaig | Thermoacoustic microscopy |
| US4521118A (en) | 1982-07-26 | 1985-06-04 | Therma-Wave, Inc. | Method for detection of thermal waves with a laser probe |
| US4522510A (en) | 1982-07-26 | 1985-06-11 | Therma-Wave, Inc. | Thin film thickness measurement with thermal waves |
| US4679946A (en) | 1984-05-21 | 1987-07-14 | Therma-Wave, Inc. | Evaluating both thickness and compositional variables in a thin film sample |
| US5042952A (en) | 1984-05-21 | 1991-08-27 | Therma-Wave, Inc. | Method and apparatus for evaluating surface and subsurface and subsurface features in a semiconductor |
| EP0200301A1 (en) | 1985-03-01 | 1986-11-05 | Therma-Wave Inc. | Method and apparatus for evaluating surface and subsurface features in a semiconductor |
| US4952063A (en) | 1985-03-01 | 1990-08-28 | Therma-Wave, Inc. | Method and apparatus for evaluating surface and subsurface features in a semiconductor |
| US4652757A (en) * | 1985-08-02 | 1987-03-24 | At&T Technologies, Inc. | Method and apparatus for optically determining defects in a semiconductor material |
| US5255071A (en) * | 1989-09-13 | 1993-10-19 | Pollak Fred H | Photoreflectance method and apparatus utilizing acousto-optic modulation |
| US5074669A (en) | 1989-12-12 | 1991-12-24 | Therma-Wave, Inc. | Method and apparatus for evaluating ion implant dosage levels in semiconductors |
| US5298970A (en) | 1990-03-20 | 1994-03-29 | Kabushiki Kaisha Kobe Seiko Sho | Sample evaluating method by using thermal expansion displacement |
| DE4035266C2 (de) | 1990-11-02 | 1995-11-16 | Jenoptik Jena Gmbh | Verfahren und Anordnung zur Thermowellenanalyse |
| US5149978A (en) | 1990-12-07 | 1992-09-22 | Therma-Wave, Inc. | Apparatus for measuring grain sizes in metalized layers |
| US5228776A (en) | 1992-05-06 | 1993-07-20 | Therma-Wave, Inc. | Apparatus for evaluating thermal and electrical characteristics in a sample |
| FR2714970B1 (fr) | 1994-01-12 | 1996-03-29 | Centre Nat Rech Scient | Ellipsomètre spectroscopique modulé. |
| US5608526A (en) | 1995-01-19 | 1997-03-04 | Tencor Instruments | Focused beam spectroscopic ellipsometry method and system |
| US6008906A (en) * | 1995-08-25 | 1999-12-28 | Brown University Research Foundation | Optical method for the characterization of the electrical properties of semiconductors and insulating films |
| US5706094A (en) * | 1995-08-25 | 1998-01-06 | Brown University Research Foundation | Ultrafast optical technique for the characterization of altered materials |
| US5978074A (en) * | 1997-07-03 | 1999-11-02 | Therma-Wave, Inc. | Apparatus for evaluating metalized layers on semiconductors |
-
1999
- 1999-05-11 US US09/310,017 patent/US6268916B1/en not_active Expired - Lifetime
-
2000
- 2000-05-03 JP JP2000617398A patent/JP4579423B2/ja not_active Expired - Fee Related
- 2000-05-03 WO PCT/US2000/012008 patent/WO2000068656A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002544501A (ja) | 2002-12-24 |
| US6268916B1 (en) | 2001-07-31 |
| WO2000068656A1 (en) | 2000-11-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070427 |
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