JP4543779B2 - Semiconductor light emitting device - Google Patents

Description

  The present invention relates to a semiconductor light emitting device used for an illumination type switch, a liquid crystal backlight, various illuminations, etc., and particularly to provide a semiconductor light emitting device that emits light with high reliability and high output.

  Nowadays, semiconductor light-emitting devices such as planar light sources using light-emitting diodes (hereinafter also referred to as LEDs) for liquid crystal backlights and the like have been used by taking advantage of strong advantages in downsizing, low power consumption, vibration, and the like. In particular, LEDs that can emit a system color name including white (JIS Z 8701) that can be used for full-color liquid crystal with one chip and two terminals have been developed and are rapidly spreading as light sources for mobile phones and vehicles.

  As an example of such an optical semiconductor device, one having the following configuration disclosed in Japanese Patent Application Laid-Open No. 2002-26394 can be given. In order to introduce light from the light emitting diode into a plate-shaped light-transmitting member that is a light guide plate, the light emitting surface of the surface mount type light emitting diode is brought into contact with the end portion of the light guide. In this way, by bringing the light emitting surface of the light emitting diode into contact with the end of the light guide, light from the light emitting diode can be incident on the light guide without leakage. A reflector made of a resin to which aluminum or a white pigment is added, together with the light-emitting diodes arranged on the light guide and the mounting substrate, excluding the end surface on which the light-emitting diodes abut and the main surface that becomes the light-emission observation surface The covering surface light source is configured by the casing.

  A plurality of light emitting diodes are brought into contact with the light guide according to the shape and size of the light guide plate. By supplying a current to the light emitting diode of such a semiconductor light emitting device, the mixed color light from the light emitting diode functioning as a point light source is emitted through a light guide to a desired shape such as a planar shape, thereby reducing reliability, space saving, and low A semiconductor light emitting device with low power consumption can be obtained. In particular, a light emitting diode capable of emitting mixed color light such as white light by combining a blue LED chip and a phosphor that absorbs blue light emitted from the blue LED chip and converts it into yellow is used as a light source. Therefore, it can be used as a semiconductor light emitting device capable of emitting various emission colors. Such semiconductor light emitting devices are rapidly spreading as liquid crystal backlights for mobile phones.

JP 2002-26394 A.

  However, as the above-described planar light source emits light with high output, heat generation on the light emitting surface side of the light emitting diode cannot be ignored. That is, the heat generation of the light emitting diode is mainly radiated from the mounting substrate side of the light emitting diode, but the housing which is the outer shell of the light emitting diode strongly generates heat due to the high output light emission. And it is not sufficient for the heat radiation from the housing to be only from the mounting substrate direction. On the other hand, the light guide is made of a light-transmitting resin that is highly light transmissive and easy to mold, and there is an increased risk of melting due to the heat generated by the light emitting diodes in contact with the light incident surface of the light guide. If the light incident surface of the light guide is damaged by heat due to high output and long-term use, it will adversely affect the optical characteristics of the planar light source, such as color misregistration and color unevenness, and a highly reliable semiconductor A light-emitting device cannot be obtained.

  Therefore, an object of the present invention is to provide a semiconductor light emitting device capable of emitting light with high reliability and high output.

  In order to achieve the above object, a semiconductor light emitting device according to the present invention includes a light emitting diode, a light guide having a light incident surface on which light from the light emitting diode is incident, and the light emitting diode and the light guide. A light emitting surface of the light emitting diode and a light incident surface of the semiconductor light emitting device, wherein the light emitting surface and the light incident surface of the light guide are in contact with each other. It is characterized by facing each other with a gap.

  As a result, even in a planar light source that emits light with high output, heat from the light emitting diode is not directly transmitted to the light guide, so that a highly reliable semiconductor light emitting device can be obtained.

  The spacer preferably has a through hole in which the light emitting diode is accommodated. Thereby, a space can be easily provided between the light emitting diode and the light incident surface of the light guide.

  Moreover, it is preferable that the said spacer has a recessed part which the edge part of the said light guide fits. Thereby, even in a use state where vibration is applied, the mounting property between the light guide and the spacer is improved, and a highly reliable semiconductor device can be obtained.

  Moreover, it is preferable that the said spacer has a side wall which covers the surface side adjacent to the light-incidence surface of the said light guide. Thereby, the light leaking from the surface adjacent to the light incident surface of the light guide is reflected in the direction of the light guide by the side wall of the spacer and is incident on the light guide again. Therefore, even in the semiconductor light emitting device in which the light emitting surface of the light emitting diode and the light incident surface are opposed to each other with a predetermined interval by the spacer in contact with the light incident surface end of the light guide, the light emission output It is possible to obtain a semiconductor light emitting device that can emit light at a high output without lowering.

  Moreover, it is preferable that the said housing | casing has an elastic member which presses the said spacer and the edge part of a light guide. As a result, the spacer and the end of the light guide are firmly in contact with each other, and even in a usage state where vibration is applied, the mounting property between the light guide and the spacer is improved, and a highly reliable semiconductor device can be obtained. . Further, the substrate is pressed against the casing by the elastic member. This pressure lowers the thermal resistance of the contact portion between the substrate and the housing. Therefore, heat transfer from the light emitting diode toward the housing through the substrate is performed smoothly, so that heat generation of the light emitting diode can be efficiently suppressed.

  The light emitting diode preferably has a housing in which the LED chip is disposed at the bottom. Accordingly, the LED chip can be protected from the external environment, and can easily come into contact with the spacer due to the outer shell shape of the housing.

  The light emitting diode is preferably an SMD type light emitting diode which is disposed on a mounting substrate and has a light emitting surface in a direction substantially perpendicular to the mounting surface. Thereby, the heat dissipation toward the mounting substrate can be improved, and a thin semiconductor light emitting device can be obtained. Further, since the light guide and the mounting substrate can be arranged so as to be opposite to each other, the light guide is not adversely affected by the heat generated by the mounting substrate, and a highly reliable semiconductor light emitting device and can do.

  The light emitting diode may have a fluorescent material that converts the wavelength of light from the LED chip. Furthermore, the light emitting diode can emit mixed color light of light from the LED chip and light from the fluorescent material. As a result, a semiconductor light emitting device with high luminance and high output can be obtained.

  The housing is preferably made of a resin containing a light scattering agent. Thereby, the light from the LED chip can be efficiently extracted without being absorbed by the housing.

  The casing preferably has an elastic member in a direction substantially perpendicular to the light emitting surface. Furthermore, it is preferable that the elastic member has a part of the casing as a spring piece. Thereby, it is possible to realize a strong mounting property between the spacer and the light guide with a simple configuration.

  The present invention can provide a highly reliable semiconductor light-emitting device because heat from a light-emitting diode is not directly transmitted to a light guide even in a planar light source that emits high output light.

  The best mode for carrying out the present invention will be described below with reference to the drawings. However, the embodiments described below exemplify a semiconductor light emitting device for embodying the technical idea of the present invention, and the present invention does not limit the semiconductor light emitting device to the following. Further, the size and positional relationship of the members shown in each drawing are exaggerated for clarity of explanation.

  In a semiconductor light-emitting device including a light-emitting diode, a light guide having a light incident surface on which light from the light-emitting diode is incident, and a casing that holds the light-emitting diode and the light guide, As a result of the examination and the experiment, the light emitting surface of the light emitting diode and the light incident surface of the light guide are opposed to each other with a predetermined distance by the spacer abutted on the light incident surface side end of the light guide I decided to let them. That is, by using a spacer to provide a predetermined distance between the light emitting surface of the light emitting diode and the light guide, an optical semiconductor device capable of emitting light with high reliability and high luminance without deterioration of optical characteristics. The present inventors have found that it is possible to achieve the present invention.

  Conventionally, a light emitting surface of a light emitting diode and an end surface of a light guide having a light incident surface are arranged as close as possible so that light from the light emitting diode can enter the light guide without leakage. For example, a semiconductor light emitting device shown as a comparative example in FIG. 2 is a combination of an SMD type light emitting diode having a light emitting surface in a direction substantially parallel to the mounting surface with respect to the mounting substrate, and a light guide. As described above, in the SMD type light emitting diode having the light emitting surface in a direction substantially parallel to the mounting surface, the light guide is disposed on substantially the same side with respect to the mounting substrate. Therefore, the mounting substrate itself is disposed close to the light guide plate, and the distance between the mounting substrate and the end of the light guide is very close. On the other hand, since the light guide is formed by injection molding of a light-transmitting resin having high light transmittance and high moldability into various shapes, it is easily damaged by heat. Therefore, if the light guide is exposed to heat radiated from the light emitting diode in the direction of the mounting substrate, a part of the light guide is damaged by the heat, thereby adversely affecting the optical characteristics. . More specifically, a part of the light incident surface of the light guide is melted to form a concavo-convex shape, and the light from the light emitting diode is irregularly reflected, thereby reducing the amount of light incident on the light guide. In addition, the light from the light emitting diode cannot be uniformly incident on the light guide body. When the light guide body is viewed from the direction of the light exit surface, color unevenness and color misregistration occur due to long-time use at high output. Will arise.

  Therefore, in the present invention, since a spacer is interposed between the light emitting diode and the light guide so as to have a predetermined interval, the light emitting surface of the light emitting diode and the light incident surface of the light guide are provided. Oppose and hold through a layer of air. Thereby, even when the output of the light emitting diode increases, heat from the light emitting diode is not directly transmitted to the direction of the light guide, and the light guide is not damaged by heat. That is, the present invention can provide a highly reliable semiconductor light emitting device capable of emitting light with high brightness with a very simple configuration in which a gap between a light emitting diode having a housing and a light guide is generated by a spacer.

  FIG. 1 is a schematic cross-sectional view of the semiconductor light emitting device of this embodiment. The light emitting diode which is the light source of the planar light source according to this embodiment is an SMD type light emitting diode in which the light emitting surface is flat in accordance with the light incident surface of the light guide plate end surface, and the light emitting surface has practically no lens effect. . Furthermore, the light emitting diode in this embodiment has a light emitting surface in a direction substantially perpendicular to the mounting surface with respect to the mounting substrate. When such a light emitting diode is fixed to the mounting substrate and the light emitting surface thereof is opposed to the light incident surface of the light guide, the mounting substrate becomes the opposite side of the light guide. Thereby, damage to the light guide due to heat generation of the mounting substrate can be prevented.

  Further, FIG. 3 is a schematic cross-sectional view of the light emitting diode in the present embodiment. The light emitting diode is bonded onto the mounting substrate 302 with solder. The light emitting surface of the SMD type light emitting diode fixed on the mounting substrate and the light incident end surface of the light guide are opposed to each other, and the light emitting surface of the light emitting diode and the light incident end surface of the light guide are separated by a spacer. It is arranged in the housing with a predetermined interval between them. Here, the spacer is in contact with the end surface of the light guide and the main surface of the mounting substrate on the side where the light emitting diode is mounted. In this embodiment, the “predetermined distance” between the light emitting surface of the light emitting diode and the light incident end surface of the light guide is appropriately adjusted in consideration of the heat resistant temperature of the light guide and the heat generation characteristics of the light emitting diode.

  The elastic member in this embodiment can be formed by making a part of the stainless steel casing convex toward the inside. This convex shape works as a spring piece having elasticity by the stainless steel casing itself. That is, this spring piece abuts the light guide and the spacer by pressing the light guide in the direction of the spacer. Thereby, the mounting property between the light guide and the spacer is improved, and an optical semiconductor device capable of emitting light with high reliability and high luminance can be obtained. Hereafter, each structure of this invention is explained in full detail.

(spacer)
The spacer in the present embodiment is arranged in contact with the housing or the mounting substrate and the light guide, and the outer shell surface of the light emitting diode, in particular, the light emitting surface from which light from the light emitting diode is emitted and the light reflection of the light guide. A predetermined interval is generated between the surface and the surface. For example, as shown in FIG. 4, the spacer 103 has a bottom surface 103d at a position higher than the light emitting surface of the light emitting diode to be arranged, and the bottom surface 103d is in contact with the light incident surface 102a of the light guide. The The spacer has various shapes according to the shapes of the housing, the mounting substrate, and the light emitting diode. For example, as shown in FIG. 4, it can have a through-hole 103b that can accommodate at least a light-emitting diode. Here, the size and shape of the through-hole are appropriately adjusted according to the size, shape, and number of elements such as a light-emitting diode to be housed, a Zener diode housed together with the light-emitting diode, and a resistor. Moreover, it can also have an uneven | corrugated shape which can be fitted in the shape of the edge part of the light guide which has a light-incidence surface. Thereby, the mounting property between the spacer and the light guide can be improved. Alternatively, as shown in FIG. 4, in order to minimize the contact area between the spacer and the housing or the mounting substrate in the mounting substrate direction, the uneven shape 103c is set to such an extent that the mechanical strength can be maintained. As a result, the spacer is in contact with the housing and the mounting substrate at the convex portion, and it is possible to make it difficult for heat to be transmitted to the light guide that is in contact with the spacer 103.

  In the semiconductor light emitting device according to this embodiment, the light emitting surface of the light emitting diode and the light incident surface are opposed to each other with a predetermined distance by a spacer that is in contact with the light incident surface side end of the light guide. Yes. Thereby, it can prevent that the heat_generation | fever of a light emitting diode is directly transmitted to a light guide. However, part of the light emitted from the light emitting surface of the light emitting diode is easily reflected by the light incident surface of the light guide, and leaks from the gap generated in the spacer and the light guide without entering the light guide. There are also things. Therefore, the spacer 103 in this embodiment preferably has a side wall 103a that covers up to the surface adjacent to the light incident surface 102a of the light guide. At this time, the side wall 103a is preferably formed so as to cover at least the surface 102b facing the light emission observation main surface 102c of the light guide body among a plurality of surfaces adjacent to the light incident surface 102a of the light guide body. However, you may form so that several surfaces, such as the light emission observation main surface 102c of a light guide, and the side surface of a light guide, may be coat | covered. For example, it is preferable that the spacer shown in FIG. 4 has a U-shaped cross section, and the end of the light guide is fitted inside the U-shape. That is, the side wall of the concave portion of the spacer is positioned in the surface direction adjacent to the light incident surface 102a of the light guide. As a result, the light incident surface can be made wider by the thickness of the side wall as compared with the spacer in which the upper surface of the concave side wall of the spacer is in contact with the light incident surface, so that more light is incident on the light guide. Can do. In addition, even if the light incident on the light incident surface 102a of the light guide leaks out from the surface adjacent to the light incident surface 102a, it is reflected in the direction of the light guide by the side wall of the recess and guided. The light can be incident again on the light body, and the luminance of the semiconductor light emitting device can be improved.

  Furthermore, it is more preferable that the spacer contains a light diffusing agent such as calcium carbonate, aluminum oxide or titanium oxide or a white pigment at least in the side wall portion. Such a side wall portion of the spacer can reflect light from the light emitting diode toward the light incident surface 102a of the light guide. Therefore, as in this embodiment, even if the light emitting surface of the light emitting diode and the light reflecting surface of the light guide have a predetermined distance without coming into contact, light from the light emitting diode does not leak and enters the light guide. Can be incident. Further, the light leaking from the surface adjacent to the light incident surface 102a of the light guide is reflected in the direction of the light guide by the side wall of the spacer and is incident on the light guide again. Accordingly, a semiconductor light emitting device with high light extraction efficiency and capable of high output light emission can be obtained.

  As the material for the spacer, a material having a lower thermal conductivity than the material for the mounting substrate is selected. For example, an insulating material such as polycarbonate, polyether ether ketone, or fluorine-based resin having excellent mechanical strength can be used. Furthermore, the spacer can also be formed by injection molding with a resin material containing a light diffusing agent such as calcium carbonate, aluminum oxide or titanium oxide.

(Light emitting diode)
The light emitting diode used in the present invention can be variously selected depending on the light emitted from the semiconductor light emitting device. In particular, in the present invention, it is preferable to use a light emitting diode capable of emitting white light. Examples of such light emitting diodes capable of emitting white light include various types such as light emitting diodes capable of emitting RGB and light emitting diodes using semiconductor light emitting elements and phosphors. As a light emitting element capable of emitting blue light, it is possible to emit light with high luminance by using a gallium nitride compound semiconductor. Further, together with the light emitting element, a light emitting diode in which a protective element such as a Zener diode or a capacitor for protecting the light emitting element from destruction due to overvoltage or an electronic element such as a resistor is mounted on a housing can be provided.

  In addition, the light emitting diode in this embodiment has a housing having a recess. The electrode exposed in the recess and the LED chip disposed on the bottom of the recess are electrically connected by a conductive wire such as a gold wire or a conductive paste such as an Ag-containing epoxy resin. The inside of the housing is sealed with a translucent resin such as an epoxy resin to form an SMD type light emitting diode.

(housing)
The housing used in the present invention is preferably one in which an LED chip can be arranged at the bottom, and various resins such as epoxy resin, silicone resin, imide resin, acrylic resin, PBT (polybutylene terephthalate), liquid crystal polymer, and aromatic nylon are used. It is suitably formed using. In particular, in order to efficiently extract light from the LED chip in the housing, it is preferable to appropriately mix calcium carbonate, aluminum oxide, or titanium oxide as a light diffusing agent in the various resins. Thereby, a white housing with high reflectance can be constituted.

  The housing can be a ceramic package obtained by laminating and firing ceramic green sheets. Since the ceramic package is superior in heat resistance and light resistance as compared to a package made of a resin material, a high-output and highly reliable semiconductor light-emitting device can be obtained. In the ceramic package having a recess, the inner wall surface of the recess is preferably a reflecting surface made of a metal material having a high light reflectance. Thereby, since the light from the light emitting element is not absorbed by the ceramic, a light emitting diode having excellent light extraction efficiency can be obtained.

  It is preferable that the outer shell surface of the housing facing the spacer has an uneven shape that can be fitted into the shape of the facing surface of the spacer. Thereby, the mounting property between the spacer and the light-emitting diode is improved, and a highly reliable semiconductor light-emitting device can be obtained even in a use state receiving vibration.

  The housing is preferably filled with an LED chip and a translucent resin electrically connected to the lead electrode. Here, the translucent resin that covers the LED chip may contain a fluorescent material as necessary. Moreover, it is preferable that the housing surface and the translucent resin on the light emission observation surface side are substantially flat so as to be easily brought into contact with the end portion of the light guide plate.

(Fluorescent substance)
The fluorescent material used in the present invention converts light from the light emitting diode, and it is more efficient to convert light from the light emitting diode to a longer wavelength. When the light from the LED chip is high-energy short-wavelength visible light, organic phosphors such as perylene derivatives, ZnCdS: Cu, and YAG: Ce (a kind of aluminum oxide phosphor) (for example, YAlO ₃ : Ce). Y ₃ Al ₅ O ₁₂ : Ce, Y ₄ Al ₂ O ₉ : Ce, (Y _0.8 Gd _0.2 ) ₃ Al ₅ O ₁₂ : Ce, Y ₃ (Al _0.8 Ga _0.2 ) ₅ O ₁₂ : Ce, Tb _2.95 Ce _0.05 Al ₅ O ₁₂ , Y _2.90 Ce _0.05 Tb _0.05 Al ₅ O ₁₂ , Y _2.94 Ce _0.05 Pr _0.01 Al ₅ O ₁₂ , Y _2.90 Ce _0.05 Pr _0.05 Al ₅ O _12, etc.) and various suitable inorganic phosphors such as nitrogen-containing CaO—Al ₂ O ₃ —SiO ₂ activated by Eu and / or Cr Used for. In particular, when a YAG: Ce phosphor is used, depending on its content, the light from the blue LED and the yellow color that partially absorbs the light can be emitted, and the white color is relatively easy to trust. Since it can form with sufficient property, it is preferable. Similarly, when a nitrogen-containing CaO—Al ₂ O ₃ —SiO ₂ phosphor activated with Eu and / or Cr is used, light from the blue LED and a part of the light are absorbed depending on its content. Thus, a red color which is a complementary color can emit light, and a white color can be formed relatively easily and reliably.

(Mounting board)
The mounting substrate is for mounting a light emitting diode, and can be suitably configured by a glass epoxy substrate on which a conductive pattern made of copper foil or the like is formed, a metal body bonded with an insulating resin, or the like. Alternatively, a conductive pattern can be applied to a metal material made of aluminum or copper via an insulating material. In the present invention, when a structure having an elastic member to be described later is used, a material having a relatively high strength is preferable so that the force from the elastic body is applied uniformly through the light guide and the spacer. This is a substrate made of materials. Moreover, it is preferable that a mounting board is arrange | positioned at a housing through a heat radiating sheet.

(Light guide)
The light guide in this embodiment can guide the light from the light emitting diode incident from a part of the end face using the internal reflection, and emit light in a desired shape from a predetermined light emitting surface. Is. Therefore, depending on the desired shape of the light emitting surface, various shapes such as a pointer for a meter needle and a plate shape usable as a liquid crystal backlight light source can be taken. The light guide has translucency in order to efficiently emit light from the light emitting diode or light obtained by wavelength conversion of the light from the light emitting surface. As the material of such a light guide, various materials such as an acrylic resin and an epoxy resin can be preferably cited.

(Casing)
The housing in this embodiment can hold at least a light emitting diode and a light guide. As the case, various types such as resins and metals containing various light diffusing agents are preferably mentioned. In particular, in consideration of light reflection and heat dissipation of the light emitting diode, metals such as nickel, iron and copper, and various alloys such as stainless steel are more preferably used. The size and shape of the housing can be variously selected according to the light guide, the light emitting diode, and the space. In the present invention, the housing may have a function of pressing the light emitting surface of the light emitting diode and the spacer. Specifically, a part of the wall surface of the casing in contact with the light guide can be a spring piece. In such a case, it can be formed of a resin, but it is more preferable to form it from a metal or alloy because it is superior in strength and space.

(Elastic member)
The elastic member in this embodiment is a member that presses at least the end face of the light guide in the direction of the spacer. Therefore, in addition to the case where an elastic body such as a rubber, a spring (including a leaf spring or a spring-like one) or a resin having various elasticity is separately provided, or when the case is formed from a metal or alloy such as stainless steel, A part can be made into a spring piece using the elastic force of the material of the casing itself, and can be made into an elastic member. When a part of the housing is used, the elastic member 401 shown in the schematic perspective view of FIG. 5 can be preferably used. Such a shape can be formed by punching.

  FIG. 5 is a schematic perspective view of the semiconductor light emitting device in this embodiment. As shown in FIG. 5, the elastic body in this embodiment has a door shape when viewed from the side of the housing. Thereby, since the metal piece for the thickness of the light guide which comprises a housing | casing can be utilized as an elastic body over the width direction, it is easy to form arbitrary elastic forces. Hereinafter, specific embodiments of the present invention will be described in detail, but it goes without saying that the present invention is not limited thereto.

  Examples according to the present invention will be described in detail below. Needless to say, the present invention is not limited to the following examples.

  The semiconductor light emitting device according to this example used the light emitting diode shown in FIG. 3 as the SMD type light emitting diode. The light emitting diode 300 has conductor wiring applied from the concave portion of the housing to the outer surface of the housing in order to electrically connect the LED chip 303 and the electrode 306 of the mounting substrate 302. Further, the light emitting diode 300 in the present embodiment is an SMD type light emitting diode having a light emitting surface on which light from the LED chip 303 is mainly observed in a direction substantially perpendicular to the mounting surface with respect to the mounting substrate.

  The housing 301 in the present embodiment will be described in more detail. First, a plurality of ceramic green sheets having holes with various inner diameters are overlapped to form a recess that allows the LED chip to be placed on the bottom surface. At this time, patterning is performed in advance on a region to be provided with the conductor wiring with a conductor paste containing tungsten particles. Next, the laminated body of ceramic green sheets is fired, and the light reflecting layer and the conductor wiring on the inner wall surface of the recess are formed by sequentially performing electrolytic plating using Ni and Ag as materials.

  The LED chip 303 is an n-type gallium nitride semiconductor on a sapphire substrate, an active layer of indium gallium nitride / gallium nitride multiple quantum well structure, and a p-type gallium nitride semiconductor double heterostructure capable of emitting blue light. We are using. The LED chip is die-bonded to the bottom of the housing with an epoxy resin, and the p-type electrode and the n-type electrode provided on the n-type and p-type semiconductor surfaces of the LED chip are respectively exposed to the bottom of the recess by gold wires. And wire bonding. In addition, the LED chip in the present embodiment reaches equilibrium by flowing a current of 100 to 125 mA per chip for 0.5 to 1 hour, and generates heat up to around 100 ° C. at the maximum.

Further, the housing is filled with a silicone resin containing (Y _0.8 Gd _0.2 ) ₃ Al ₅ O ₁₂ : Ce phosphor to form an SMD light emitting diode capable of emitting white light.

  Next, the pattern which can connect the light emitting diodes in series is fixed and electrically connected to the mounting substrate 302 made of aluminum formed with an insulating material by flow soldering. The width of this mounting board is a thin plate shape substantially equal to the size of the SMD type light emitting diode and the thickness of the light guide, and a plurality of SMD light emitting diodes are mounted at regular intervals when viewed from the plane. In order to obtain a semiconductor light emitting device as shown in FIG. 1 or FIG.

  The light guide 102 is formed in a substantially rectangular parallelepiped shape by injection molding using an acrylic resin as a material. The heat resistant temperature of the light guide 102 in this embodiment is 95 ° C. to 100 ° C. Further, the end face of the rectangular parallelepiped is formed to have a thickness corresponding to the size of the light emitting surface of the SMD type light emitting diode mounted on the mounting substrate 104, and serves as a light incident surface. Further, the wide main surface adjacent to the light incident surface is a light emitting surface, that is, a light emission observation surface. On the other hand, the end surface facing the light incident surface is sized so as to contact the elastic member.

  The housing 105 has a shape as shown in FIG. 1 so that the SMD type light emitting diode, the light guide 102 and the spacer 103 arranged on the mounting substrate 104 can be fitted. The housing 105 is made of stainless steel and relatively easily formed by punching. The casing 105 in the present embodiment is a plate-like spring piece bent inward so as to be pressed against the spacer 103 in contact with the light guide 102 from the end face of the light guide or the mounting substrate 104 side. 401 is formed. In this embodiment, a plate-like spring piece bent toward the inside of the casing serves as an elastic member.

  As shown in FIG. 5, the light guide 102, the spacer 103, and the SMD type light emitting diode disposed on the mounting substrate 104 are fitted into the housing 105 to form the semiconductor light emitting device 100 of the present invention. The spacer 103 has a bottom surface 103d on the light incident surface side of the light emitting surface of the light emitting diode mounted on the mounting substrate, and the bottom surface 103d is in contact with the light incident surface 102a of the light guide. The spacer 103 has a through hole 103b between the bottom surface 103d, and the light emitting diode is accommodated in the through hole 103b. In this embodiment, the distance between the light emitting surface of the light emitting diode and the light incident surface of the light guide is approximately 0.2 mm to 0.5 mm.

  When a current is passed through the semiconductor light emitting device 100, uniform white light can be observed from the light emission observation surface side of the light guide. In addition, the semiconductor light-emitting device in this embodiment can be a highly reliable semiconductor light-emitting device without impairing optical characteristics even during long-time high-power light emission.

  INDUSTRIAL APPLICABILITY The present invention can be used as a planar light source such as a liquid crystal backlight as a semiconductor light-emitting device that is resistant to vibration and is thinned, miniaturized, and reduced in power consumption.

FIG. 1 is a schematic cross-sectional view of a semiconductor light emitting device in one embodiment of the present invention. FIG. 2 is a schematic cross-sectional view of a semiconductor light emitting device shown for comparison with the present invention. FIG. 3 is a schematic cross-sectional view of a light emitting diode according to an embodiment of the present invention. FIG. 4 is a schematic perspective view of a spacer in one embodiment of the present invention. FIG. 5 is a schematic perspective view of a semiconductor light emitting device in one embodiment of the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100, 200 ... Semiconductor light-emitting device 101, 401 ... Elastic member 102, 201 ... Light guide 102a ... Light incident surface 102b of a light guide ... Light emission observation main surface 102c of a light guide ... Main surface 103 opposite to the light emission main surface of the light guide ... Spacer 103a ... Spacer side wall 103b ... Spacer through-hole 103c ... Bottom surface 104, 204, 302 ... mounting substrate 105, 203 ... housing 106, 202, 300 ... light emitting diode 301 ... housing 303 ... LED chip 304 ... fluorescent substance 305 ... conductive Conductive wire 306 ... Mounting board electrode 307 ... Conductor wiring

Claims (3)

A light emitting diode, a semiconductor light-emitting device having a light guide having a light incident surface to which light is incident, and a housing for holding the light emitting diode and the light guide member from the light emitting diode,
The light emitting diode is disposed on a mounting substrate and has a light emitting surface in a direction substantially perpendicular to the mounting surface;
The abutted spacer end of the light incident surface side of the light guide, the pre-Symbol onset light surface and the light incident surface faces so as to have a predetermined interval,
A semiconductor light emitting device , wherein a convex portion is provided in the mounting substrate direction of the spacer, and the convex portion is in contact with the mounting substrate or the housing .   The semiconductor light emitting device according to claim 1, wherein the spacer has a through hole in which the light emitting diode is accommodated.   The semiconductor light-emitting device according to claim 1, wherein the spacer has a recess into which an end of the light guide is fitted.

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