JP4528952B2 - Method and apparatus for measuring flatness - Google Patents
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Description
本発明は、基板や基板上の薄膜に光を照射し、その透過スペクトルの変化の測定から基板や基板上の薄膜の平坦度や複素誘電率を測定する装置及びその測定法に関するものである。 The present invention relates to an apparatus for measuring the flatness and complex permittivity of a substrate and a thin film on the substrate by measuring the transmission spectrum of the substrate and the thin film on the substrate, and a measuring method thereof.
コンデンサーの容量測定から進化した容量法によって、数GHz以下ではLCRメータを用いて、基板上の薄膜の複素誘電率を測定できる(例えば、下記「特許文献1」参照)。容量法での高周波側の測定限界は、電極のロスの影響や、電極のインダクタンスによるLC共振の効果を補正することが困難なためである。
The complex dielectric constant of a thin film on a substrate can be measured using an LCR meter at a frequency of several GHz or less by a capacitance method that has evolved from the measurement of the capacitance of a capacitor (see, for example, “
高周波での複素誘電率測定では、一般に共振器法が用いられている。基板上の薄膜の複素誘電率は、その薄膜と電極から構成されたストリップラインやマイクロストリップライン等において、ネットワークアナライザーを用いて伝搬方向に対する強度と位相の変化の測定から求まる(例えば、下記「特許文献2」参照)。この方法で、0.1GHz〜10GHz領域の複素誘電率測定が可能になる。ここでの高周波側の測定限界は、線路を構成する導体のロスを完全に分離、除去して薄膜だけの特性を得ることが困難なためである。 In the complex permittivity measurement at a high frequency, the resonator method is generally used. The complex dielectric constant of a thin film on a substrate can be obtained from the measurement of changes in intensity and phase with respect to the propagation direction using a network analyzer in a stripline or a microstripline composed of the thin film and electrodes (for example, “Patents below” Reference 2 ”). This method makes it possible to measure the complex dielectric constant in the 0.1 GHz to 10 GHz region. The measurement limit on the high frequency side here is because it is difficult to completely separate and remove the loss of the conductor constituting the line to obtain the characteristics of only the thin film.
さらに高周波領域で、基板上の薄膜の複素誘電率を測定するために、空洞共振器法が用いられている。空洞共振器中に基板上の薄膜試料を挿入した時としない時の共振周波数とQ値等をネットワークアナライザーで測定し、薄膜の複素誘電率を求めている(例えば、下記「特許文献3」参照)。この方法では、1GHz〜50GHz領域の複素誘電率の測定が可能になる。ここでの高周波側の測定限界は、空洞共振器の物理的な大きさで決まっている。つまり、空洞共振器の寸法は波長程度(50GHzでは約6mm)であり、このとき空洞共振器の寸法精度が、共振器作製の工作精度とほぼ一致してしまうことである。寸法精度が低いと大きい測定誤差を生じてしまう。 Furthermore, in order to measure the complex dielectric constant of the thin film on the substrate in the high frequency region, the cavity resonator method is used. The resonant frequency and Q value when the thin film sample on the substrate is inserted into the cavity resonator are measured with a network analyzer to obtain the complex dielectric constant of the thin film (for example, see “Patent Document 3” below). ). In this method, the complex dielectric constant in the 1 GHz to 50 GHz region can be measured. The measurement limit on the high frequency side here is determined by the physical size of the cavity resonator. In other words, the size of the cavity resonator is about the wavelength (about 6 mm at 50 GHz), and at this time, the dimensional accuracy of the cavity resonator substantially coincides with the machining accuracy of the resonator fabrication. If the dimensional accuracy is low, a large measurement error occurs.
上述の容量法や共振器法では、測定器具の寸法に合わせるために、挿入する測定用試料に加工を必要とする破壊測定法であり、試料の加工には相当の手間と費用を要する。また、作製した試料の外形寸法、特に測定器具の内壁に接触する部分の寸法精度が低いと大きい測定誤差が生じ、正確な測定は困難になる。 The above-described capacitance method and resonator method are destructive measurement methods that require processing on the measurement sample to be inserted in order to match the dimensions of the measuring instrument, and processing the sample requires considerable labor and cost. In addition, if the outer dimensions of the manufactured sample, particularly the dimensional accuracy of the portion in contact with the inner wall of the measuring instrument, is low, a large measurement error occurs and accurate measurement becomes difficult.
測定する試料に加工を加えない2つの非破壊測定法がある。一方は導波管の間に試料を挟む方法で、他方は試料に光を照射する方法である。 There are two non-destructive measurement methods that do not add processing to the sample being measured. One is a method of sandwiching a sample between waveguides, and the other is a method of irradiating the sample with light.
2つの導波管で試料を挟み込んで、一方の開口面の反射係数及び他方の開口面の透過係数をネットワークアナライザーで測定して、これらの絶対値と位相角を、マックスウェル方程式を解くことにより導出した連立方程式に代入して、基板上の薄膜の複素誘電率を求める(例えば、下記「特許文献4」参照)。この方法は、非共振器法と呼ばれ、非破壊測定である。この方法では、1GHz〜100GHz(波長で約3mm)領域の複素誘電率測定が可能になる。ここでの高周波側の測定限界は、上記段落[0004]及び[0005]と同様に、導波管の工作精度のためである。
A sample is sandwiched between two waveguides, the reflection coefficient of one aperture and the transmission coefficient of the other aperture are measured with a network analyzer, and their absolute values and phase angles are solved by solving the Maxwell equation. By substituting into the derived simultaneous equations, the complex dielectric constant of the thin film on the substrate is obtained (for example, see “
複素誘電率測定のためには、段落[0002]〜[0007]の低周波側から高周波側に向かう『電気的測定法』とは別に、高周波側から低周波側に向かう『光学的測定法』がある。一般に、光学測定技術では、非破壊、非接触、大気圧下で複素誘電率の測定が可能である。これらの光学測定法は、自由空間法と呼ばれている。 For complex permittivity measurement, apart from the “electrical measurement method” from the low frequency side to the high frequency side in paragraphs [0002] to [0007], the “optical measurement method” from the high frequency side to the low frequency side. There is. In general, the optical measurement technique can measure a complex dielectric constant under non-destructive, non-contact and atmospheric pressure. These optical measurement methods are called free space methods.
試料に光を照射してその時の光学的応答(反射光或いは透過光)から、複素誘電率を求める方法では、試料の厚さをdとして、測定波長をλとすると、d/λの比が小さいほど、複素誘電率の測定が困難になる。これは、光は波動であり、波の『山』と『谷』を繰り返しながら進んでいく。試料が薄くなると、例えばd/λ=0.001程度になると、試料は入射光の『山』と『谷』の間のほんの一部分としか相互作用しなくなり、試料から見ると直流の電場が作用したように見える。直流ではコンデンサーは単なる絶縁体であり、複素誘電率は実数の定数に近づく。以上のような理由で、d/λの比が小さいときは、複素誘電率の測定が困難になる。 In the method of calculating the complex permittivity from the optical response (reflected light or transmitted light) at the time when the sample is irradiated with light, the ratio of d / λ is given by assuming that the thickness of the sample is d and the measurement wavelength is λ. The smaller the value, the more difficult it is to measure the complex dielectric constant. This is because light is a wave, and it advances while repeating the “mountain” and “valley” of the wave. When the sample becomes thin, for example, when d / λ = 0.001, the sample only interacts with a small portion between the “crest” and “valley” of the incident light, and a DC electric field acts when viewed from the sample. Looks like. In DC, the capacitor is just an insulator, and the complex dielectric constant approaches a real constant. For the above reasons, it is difficult to measure the complex dielectric constant when the ratio d / λ is small.
不透明でない試料に光を入射させて、その透過スペクトルを測定して薄膜の複素誘電率を求めようとする時、薄膜の厚さが薄くなり、測定波長が長くなると、その測定は困難になる。この状況の計算の結果を図2に示す。ここでは、試料の厚さと複素誘電率は固定で、測定波長を変えたときの透過率スペクトルの計算結果である。基板(S)の厚さと屈折率がそれぞれ692μmと3.4155で、薄膜(F)の厚さと屈折率がそれぞれ0.4μmと1.812としている。各図中で実線が基板上の薄膜からなる試料の透過率スペクトル(T(F/S))で、点線が基板のみの透過率スペクトル(T(S))であり、これらの図ではスペクトルは約2フリンジ分のみ描いてある。図2(a)は入射波長が5μm近傍(中赤外光)でd/λ=0.08であり、図2(b)〜(d)では、それぞれ波長を1桁ずつ長くした場合である。図2(d)は波長が5mm近傍で(周波数では60GHz近傍で)、d/λ=0.00008である。図2(c)と(d)では、基板のみの透過率スペクトル(T(S))と基板上の薄膜の透過率スペクトル(T(F/S))の差がほとんど無く、このままでは0.4μmの薄膜の複素誘電率を求めることは非常に困難である。ここで、複素誘電率(ε)と複素屈折率(n)の間には、『nの2乗がεに等しい(n2=ε)』の関係が成立する。単に屈折率と言う時は、複素屈折率の実数部のことである。 When light is incident on a non-opaque sample and its transmission spectrum is measured to determine the complex dielectric constant of the thin film, the measurement becomes difficult when the thin film is thin and the measurement wavelength is long. The results of this situation calculation are shown in FIG. Here, the thickness of the sample and the complex dielectric constant are fixed, and the result is a calculation result of the transmittance spectrum when the measurement wavelength is changed. The thickness and refractive index of the substrate (S) are 692 μm and 3.4155, respectively, and the thickness and refractive index of the thin film (F) are 0.4 μm and 1.812, respectively. In each figure, the solid line is the transmittance spectrum (T (F / S)) of the sample made of a thin film on the substrate, and the dotted line is the transmittance spectrum (T (S)) of the substrate alone. In these figures, the spectrum is Only about 2 fringes are drawn. FIG. 2A shows the case where the incident wavelength is around 5 μm (mid-infrared light) and d / λ = 0.08, and FIGS. 2B to 2D show cases where the wavelength is increased by one digit. . In FIG. 2D, the wavelength is in the vicinity of 5 mm (frequency is in the vicinity of 60 GHz), and d / λ = 0.00008. 2 (c) and (d), there is almost no difference between the transmittance spectrum (T (S)) of the substrate alone and the transmittance spectrum (T (F / S)) of the thin film on the substrate. It is very difficult to obtain the complex dielectric constant of a 4 μm thin film. Here, a relationship of “the square of n is equal to ε (n2 = ε)” is established between the complex dielectric constant (ε) and the complex refractive index (n). When simply referring to the refractive index, it means the real part of the complex refractive index.
自由空間法には、固定入射角度での反射係数の振幅及び位相を直接測定する方法(例えば、下記「非特許文献1」参照)や反射率の入射角度依存または反射率の試料厚さ依存または反射率の周波数依存から複素誘電率を求める方法(例えば、下記「非特許文献2」参照)がある。固定入射角度での測定法では、反射係数の振幅と位相を測定するために、ネットワークアナライザー等の高価な測定機器が必要である。入射角度を変える方法では、エネルギー反射率の測定だけであるので、ネットワークアナライザーを必要ない。しかし、両方の測定に共通して、反射率の絶対値を測定しなければならない。このためには、試料と同じ大きさの金属平板を基準試料とする必要があり、この金属平板の大きさと設置位置を被測定試料と同一にしないと測定誤差が生じるという問題がある。
The free space method includes a method of directly measuring the amplitude and phase of the reflection coefficient at a fixed incident angle (see, for example, “Non-Patent
金属の基準試料を必要としない、新しい反射測定法が開発されている。試料にミリ波帯にある円偏向電磁波を照射した時の、試料によるTE波の反射係数とTM波の反射係数との比を求め、この比から複素誘電率を求める方法である(例えば、下記「特許文献5」参照)。 New reflectometry methods have been developed that do not require a metal reference sample. This is a method for obtaining the complex dielectric constant from the ratio of the TE wave reflection coefficient and the TM wave reflection coefficient of the sample when the sample is irradiated with a circularly polarized electromagnetic wave in the millimeter wave band (for example, the following) (See Patent Document 5).
段落[0011]と[0012]で述べた自由空間法での測定の感度は一般に低い。これまでのトップデータは、シリコン基板上の厚さd=3.27μmの低誘電体(Low-k)ポリマー薄膜に、入射角度を変えながら925GHz(λ=324μm)のサブミリ波を照射してブリュスター角度前後での反射率を測定して複素誘電率を決定している(例えば、下記「特許文献3」参照)。この時のd/λの比は、0.01である。 The sensitivity of the measurement in the free space method described in paragraphs [0011] and [0012] is generally low. Top data so far shows that Brewster irradiates a 925 GHz (λ = 324 μm) submillimeter wave to a low dielectric (Low-k) polymer thin film with a thickness of d = 3.27 μm on a silicon substrate while changing the incident angle. The complex dielectric constant is determined by measuring the reflectance before and after the angle (see, for example, “Patent Document 3” below). At this time, the ratio of d / λ is 0.01.
段落[0002]〜[0007]で述べてきたように、電気的測定法から出発しても、段落[0008]〜[0013]で述べてきたように、光学的測定法から出発しても、周波数で30GHz〜3THz(波長で100μm〜10mm)の間で基板上の薄膜の複素誘電率の測定は一般に困難な測定である。 As described in paragraphs [0002] to [0007], starting from an electrical measurement method, as described in paragraphs [0008] to [0013], starting from an optical measurement method, Measurement of the complex dielectric constant of a thin film on a substrate between 30 GHz and 3 THz in frequency (100 μm to 10 mm in wavelength) is generally a difficult measurement.
現在通信システムに利用されている周波数帯域として、1.9GHz帯および2.45GHz帯の準マイクロ波帯域、および19GHz帯の準ミリ波帯域がある。準マイクロ波帯域は、パーソナル・ハンディ・ホン・システム(PHS)と中速無線LANの構内無線機器に割り当てられている。一方、準ミリ波帯域は高速無線LANの構内無線機器に割り当てられている。 The frequency bands currently used in communication systems include the 1.9 GHz band and the 2.45 GHz band quasi-microwave band, and the 19 GHz band quasi-millimeter wave band. The quasi-microwave band is allocated to private wireless devices such as personal handy phone systems (PHS) and medium-speed wireless LANs. On the other hand, the quasi-millimeter wave band is allocated to the local wireless device of the high-speed wireless LAN.
さらに高周波の30GHz〜3THzの領域は、今後の開発が期待される領域である。50GHz帯域のコードレス通信システムの研究開発や、60GHz帯域の衝突防止用車載レーダや、超高速無線LANの研究開発は盛んで、情報通信技術の大きな飛躍が期待されている。さらに高周波領域は、現状ではミリ波・サブミリ波天文学や核融合プラズマ研究開発の中で実用化され、重要な役割を果たしている。この高周波領域用の新しいデバイス開発のためには、この高周波領域での従来物質や新物質の複素誘電率の測定が、必要不可欠であり、重要な技術である。 Further, the high frequency region of 30 GHz to 3 THz is a region where future development is expected. Research and development of cordless communication systems in the 50 GHz band, in-vehicle radars for collision prevention in the 60 GHz band, and ultra-high-speed wireless LAN are thriving, and a great leap in information and communication technology is expected. Furthermore, the high-frequency region is currently being put into practical use in millimeter-wave and submillimeter-wave astronomy and fusion plasma research and development, and plays an important role. In order to develop a new device for this high frequency region, measurement of the complex dielectric constant of conventional materials and new materials in this high frequency region is indispensable and an important technology.
半導体産業での、デバイスの高集積化、微細化に伴い、半導体ウェーハに対する品質要求は厳しくなってきた。特に基板となる半導体ウェーハについては、高平坦度が求められ、その都度、研磨技術のめざましい進歩によりその要求に応えてきた。 With the high integration and miniaturization of devices in the semiconductor industry, quality requirements for semiconductor wafers have become strict. In particular, a semiconductor wafer serving as a substrate is required to have high flatness, and each time, the demand has been met by remarkable progress in polishing technology.
しかし、平坦度の向上には、研磨技術だけではなく、それを評価するための高精度な平坦度測定法および装置が必要である。商品化された半導体の厚さ測定に広く使用されている非接触でウェーハ全面の平坦度の評価が可能な方法は、静電容量法と光干渉法である。 However, in order to improve the flatness, not only a polishing technique but also a highly accurate flatness measuring method and apparatus for evaluating it are required. Non-contact and widely used methods for measuring the flatness of the entire wafer surface that are widely used for measuring the thickness of commercialized semiconductors are the capacitance method and the optical interference method.
静電容量法では、互いに向き合う2つの電極(平板コンデンサー)の間に試料を挿入し、静電容量の変化を検出して試料の局所的厚さを測定している。このコンデンサーを試料表面上でスキャンして全面の平坦度を求めている(例えば、下記「特許文献6」参照)。静電容量法は、段落[0020]記載の光干渉方式の平坦度測定法に比べて、パーティクルの影響が少ない利点があり、またスライスウェーハからパターン付きのウェーハまで種々のウェーハ厚さや平坦度を非接触に測定できる。しかし、この方法は、半導体ウェーハ表面に界面活性剤水溶液の塗布を必要とし、さらに半導体ウェーハ表面に存在する自然酸化膜を除去しなくてはならない等の前処理を必要とする。 In the capacitance method, a sample is inserted between two electrodes (flat plate capacitors) facing each other, and a change in capacitance is detected to measure the local thickness of the sample. The condenser is scanned on the surface of the sample to obtain the flatness of the entire surface (see, for example, “Patent Document 6” below). The capacitance method has the advantage of less influence of particles compared to the optical interference type flatness measurement method described in paragraph [0020], and has various wafer thicknesses and flatnesses from sliced wafers to patterned wafers. It can be measured without contact. However, this method requires application of a surfactant aqueous solution to the surface of the semiconductor wafer, and further requires pretreatment such as removal of a natural oxide film present on the surface of the semiconductor wafer.
干渉法では、半導体ウェーハに例えば赤外線を照射して、試料からの反射光を検出器で電気信号に変換する。測定されたスペクトルには、半導体ウェーハ内部での多重反射のためのフリンジがあらわれる。このフリンジの間隔から試料の局所的厚さが求まる。この光照射位置を試料表面上でスキャンして全面の平坦度を求めている(例えば、下記「特許文献7」参照)。この方法は、前処理が不要で、研磨加工工程中にin situでの計測も可能である。 In the interference method, for example, infrared light is irradiated on a semiconductor wafer, and reflected light from a sample is converted into an electrical signal by a detector. The measured spectrum shows fringes due to multiple reflection inside the semiconductor wafer. The local thickness of the sample is obtained from the fringe spacing. The flatness of the entire surface is obtained by scanning the light irradiation position on the sample surface (for example, refer to “Patent Document 7” below). This method does not require pretreatment and can also be measured in situ during the polishing process.
現在実用化されている研磨加工方法で達成できる平坦度は、1〜5μmである(例えば、下記「特許文献7」参照)。これに、研磨加工前に基板の表面形状を平坦度測定器で計測して、この測定結果を基にして基板を矯正チャックで真空吸着しながら変形させて所望の形状に矯正した後、その矯正形状を保持した状態で研磨加工をおこなうと、0.3μmの平坦度が達成できる(例えば、下記「特許文献8」参照)。 Flatness that can be achieved by a polishing method that is currently in practical use is 1 to 5 μm (see, for example, “Patent Document 7” below). Before the polishing process, the surface shape of the substrate is measured with a flatness measuring device, and the substrate is deformed while being vacuum-adsorbed with a correction chuck based on the measurement result, and then corrected to a desired shape. When polishing is performed while maintaining the shape, a flatness of 0.3 μm can be achieved (see, for example, “Patent Document 8” below).
本発明は従来技術の実情に鑑みて為されたものであって、今後の製品開発の方向が30GHzより高周波側であること、およびこの周波数領域で基板上のLow-k(低誘電体;これについては段落[0026]及び[0027]において説明する。)薄膜の複素誘電率の測定に対する需要が大きいこと、さらにこの周波数領域で薄膜の厚さが1μm以下でも複素誘電率が測定できる技術であれば、実際の半導体産業の製造現場でin situの製品管理のための装置として実用化できることから、30GHzより高周波側で基板上の薄膜の複素誘電率の測定を可能とする技術開発をめざす。しかし、実際半導体産業で使われている半導体ウェーハの平坦度は1μmより大きいために、従来のような単なる高感度複素誘電率測定装置の開発では上記の目標は達成できない。この発明では、基板の平坦度と基板上の薄膜の複素誘電率の両方を同じ測定装置で測定して、薄膜の厚さが1μm以下でも複素誘電率が測定できる方法および装置を提供することを技術的課題とする。 The present invention has been made in view of the state of the prior art, and the future product development direction is on the high frequency side from 30 GHz, and the low-k (low dielectric material; In paragraphs [0026] and [0027], there is a great demand for measurement of the complex dielectric constant of a thin film, and a technique capable of measuring the complex dielectric constant even if the thickness of the thin film is 1 μm or less in this frequency region. For example, since it can be put into practical use as an in-situ product management device at the actual manufacturing site in the semiconductor industry, we aim to develop a technology that enables measurement of the complex dielectric constant of a thin film on a substrate at a frequency higher than 30 GHz. However, since the flatness of semiconductor wafers actually used in the semiconductor industry is larger than 1 μm, the above-mentioned goal cannot be achieved by the development of a conventional high-sensitivity complex dielectric constant measuring apparatus. The present invention provides a method and apparatus capable of measuring both the flatness of a substrate and the complex dielectric constant of a thin film on the substrate with the same measuring apparatus, and measuring the complex dielectric constant even when the thickness of the thin film is 1 μm or less. Technical issue.
半導体基板が透明である波長では、透過率測定が可能である。さらに基板が平行平板であれば、基板内の多重反射のために、その透過スペクトルにフリンジが現れる。このフリンジのピーク周波数は、
基板のピーク周波数からその基板に薄膜を成膜した試料でのピーク周波数の変位量Δν(=νf−νs)は、(数1)と(数2)から求まり、
ここで、高誘電体(High-k)膜の場合についてまず見積もってみる。基板が例えばシリコン(ns=3.4でds=700μm)で、薄膜(厚さdf=1μm)が金属のようなHigh-k材料ではnf〜100或いはそれ以上が可能である。この時、65GHz付近のミリ波を垂直入射で照射した時のピーク位置の変位量は、(数3)から、−2.7GHzと求まる。一方、(数1)からフリンジのピーク間隔は、63GHzと求まる。High-k薄膜が有る時と無い時で、ピーク位置が、1フリンジの中で約4%(=−2.7/63)低周波側へずれるのであるから、これは各々の試料の透過スペクトルを測定すれば、検出可能な量であり、1μmの厚さのHigh-k薄膜の複素誘電率を求めることができる。 Here, first, the case of a high dielectric (High-k) film will be estimated. For example, if the substrate is silicon (ns = 3.4 and ds = 700 μm) and the thin film (thickness df = 1 μm) is a high-k material such as metal, nf˜100 or more is possible. At this time, the displacement amount of the peak position when the millimeter wave near 65 GHz is irradiated at normal incidence is obtained as −2.7 GHz from (Equation 3). On the other hand, from (Equation 1), the peak interval of the fringe is obtained as 63 GHz. Since the peak position is shifted to the low frequency side by about 4% (= -2.7 / 63) in one fringe with and without the high-k thin film, this measures the transmission spectrum of each sample. Then, it is a detectable amount, and the complex dielectric constant of a high-k thin film having a thickness of 1 μm can be obtained.
次に低誘電体(Low-k)膜の場合について見積もってみる。基板が例えばシリコン(ns=3.4でds=700μm)で、薄膜(厚さdf=1μm)がシリコンの熱酸化膜(SiO2)のようなLow-k材料ではnf=1.8である。この時、65GHz付近のミリ波を入射角度を変えながら照射した時のピーク周波数の変位量Δν(数3)と、フリンジのピーク間隔νs(数1)を求めた結果を表1にまとめる。
S偏向とP偏向の透過率(TsとTp)と反射率(RsとRp)の入射角度依存性を図3に示す。ここでは、シリコン基板(ns=3.4でds=700μm)に60GHzのミリ波を照射した場合についての計算結果である。表1からわかるように、この入射周波数の60GHzは、この試料のフリンジのピーク周波数より低周波側にずれている。S偏向の透過率(Ts)に注目すると、入射角度を増加させると、透過率は単調に減少して、90度で零になっている。P偏向の透過率(Tp)でも75度付近のブリュスター角度で最大値になった後は、入射角度を増加させると、透過率は単調に減少して、90度で零になっている。 FIG. 3 shows the incident angle dependence of the transmittance (Ts and Tp) and reflectance (Rs and Rp) of S deflection and P deflection. Here, it is a calculation result when a silicon substrate (ns = 3.4 and ds = 700 μm) is irradiated with 60 GHz millimeter waves. As can be seen from Table 1, the incident frequency of 60 GHz is shifted to the lower frequency side than the peak frequency of the fringe of this sample. Paying attention to the transmittance (Ts) of S deflection, when the incident angle is increased, the transmittance decreases monotonically and becomes zero at 90 degrees. After the transmittance (Tp) of P deflection reaches the maximum value at the Brewster angle near 75 degrees, when the incident angle is increased, the transmittance decreases monotonically and becomes zero at 90 degrees.
段落[0027]から基板内の多重反射のために現れるフリンジのピーク周波数では入射角度に依らず、透過率は最大値(k=0では透過率は100%)をとる。一方、段落[0028]からピーク周波数からはずれた周波数では、入射角度を増加させると透過率はゼロに近づく。これら2つの効果が重なると、透過スペクトルは入射角度を増加させると半値幅が徐々に狭くなって、痩せていく。このようすを図4に示す。 From the paragraph [0027], at the fringe peak frequency that appears due to multiple reflection in the substrate, the transmittance takes the maximum value (the transmittance is 100% at k = 0) regardless of the incident angle. On the other hand, at the frequency deviated from the peak frequency from paragraph [0028], the transmittance approaches zero when the incident angle is increased. When these two effects overlap, the transmission spectrum becomes thinner and narrower as the incident angle is increased. This is shown in FIG.
段落[0027]の表1の第2行(Δν)から、基板と基板上の薄膜では、その透過率スペクトルのピークの周波数はずれている。大きな入射角度(斜入射)で基板の透過スペクトル(T(S))と基板上の薄膜試料の透過スペクトル(T(F/S))を測定して、それらの比(相対透過率;T(F/S)/T(S))をとると段落[0029]の効果のために、最大値と最小値が隣接した曲線が得られる。この曲線は180度の回転対称中心を持っている。このようすを図5(a)と(b)に示す。この計算では、基板をシリコン(ns=3.4155でds=700μm)で薄膜をシリコンの熱酸化膜(nf=1.812)で、図5(a)はこの薄膜の厚さが2μmで、図5(b)は厚さが0.4μmである。この計算結果では、入射角度85度のときに、膜厚が2μmでは±7%のピーク、膜厚が0.4μmでは±1.4%のピークが表れている。 From the second row (Δν) in Table 1 of paragraph [0027], the peak frequency of the transmittance spectrum is shifted between the substrate and the thin film on the substrate. The transmission spectrum (T (S)) of the substrate and the transmission spectrum (T (F / S)) of the thin film sample on the substrate were measured at a large incident angle (oblique incidence), and the ratio (relative transmittance; T ( Taking F / S) / T (S)), a curve with adjacent maximum and minimum values is obtained due to the effect of paragraph [0029]. This curve has a rotational symmetry center of 180 degrees. This is shown in FIGS. 5 (a) and 5 (b). In this calculation, the substrate is silicon (ns = 3.4155, ds = 700 μm) and the thin film is a silicon thermal oxide film (nf = 1.812). FIG. 5A shows the thickness of this thin film is 2 μm. ) Has a thickness of 0.4 μm. In this calculation result, when the incident angle is 85 degrees, a peak of ± 7% appears when the film thickness is 2 μm, and a peak of ± 1.4% appears when the film thickness is 0.4 μm.
ここまでの計算では、基板と薄膜の両方の複素屈折率の虚数部(k)をゼロとしてきた。基板のkがゼロでない時は、基板と基板上の薄膜の透過率スペクトルのピークは100%より下がるが、両方で同じだけ下がるために、それらの比(段落[0030]参照)をとると、定性的には図5(a)と(b)と同じになる。一方、薄膜のkがゼロでない時は、基板上の薄膜の透過率スペクトルのピークが基板のそれより下がる。この結果、基板と基板上の薄膜の透過率スペクトルの比をとると、最大値が下がり、180度の回転対称中心が無くなる。 In the calculations so far, the imaginary part (k) of the complex refractive index of both the substrate and the thin film has been set to zero. When the k of the substrate is not zero, the peak of the transmittance spectrum of the substrate and the thin film on the substrate falls below 100%, but since both drop by the same, taking their ratio (see paragraph [0030]) Qualitatively, it is the same as FIGS. 5 (a) and 5 (b). On the other hand, when the k of the thin film is not zero, the peak of the transmittance spectrum of the thin film on the substrate falls below that of the substrate. As a result, when the ratio of the transmittance spectrum of the substrate to the thin film on the substrate is taken, the maximum value is lowered and the rotational symmetry center of 180 degrees is eliminated.
下記段落[0035]の半月状に薄膜で覆われた試料の測定結果の図6において、この相対透過率曲線にベストフィットするように薄膜の複素誘電率を選ぶことで、薄膜の複素誘電率は実数部ε1=3.5で虚数部ε2=0.08と求まった。下記段落[0037]の一様な厚さのシリコン基板の試料の測定結果の図8において、4インチのシリコン基板は65GHz付近のミリ波で測定すると、ほぼ楔形をしていると推定できる。次にこれらの相対透過率曲線にベストフィットするように鏡面対称の角度と基板の平坦度を求めると、角度が11.2度で、平坦度が、約20μmである。このように、電気的な測定に依らず光学的な測定により、基板の平坦度と基板上の薄膜の複素誘電率の両方を同じ測定装置で測定して、薄膜の厚さが1μm以下でも複素誘電率が測定できる。 In FIG. 6 of the measurement result of the sample covered with a thin film in the shape of a half moon in the following paragraph [0035], the complex dielectric constant of the thin film is obtained by selecting the complex dielectric constant of the thin film so as to best fit the relative transmittance curve. The real part ε1 = 3.5 and the imaginary part ε2 = 0.08. In FIG. 8 of the measurement result of the silicon substrate sample having a uniform thickness in the following paragraph [0037], it can be estimated that the 4-inch silicon substrate has a substantially wedge shape when measured with a millimeter wave near 65 GHz. Next, when the mirror symmetry angle and the flatness of the substrate are obtained so as to best fit these relative transmittance curves, the angle is 11.2 degrees and the flatness is about 20 μm. In this way, both the flatness of the substrate and the complex dielectric constant of the thin film on the substrate are measured with the same measuring device by optical measurement regardless of electrical measurement, and even when the thickness of the thin film is 1 μm or less, The dielectric constant can be measured.
以下に、発明を実施するための最良の形態を示す。 The best mode for carrying out the invention will be described below.
本発明に係わる複素誘電率測定の実施例を図面を参照して説明する。
図1は、複素誘電率測定装置10の配置図である。光源12(この図ではミリ波後進波管(BWO))を出たCW光はメカニカルチョッパ14で強度変調をうける。レンズ15とアパーチャー16を通過した光は平面波になる。試料11の前面でレンズ17とアパーチャー18で試料面上に集光する。この入射系30に必要に応じてポーラライザー(この図では省略)と光パワーの減衰器(この図では省略)を入れる。試料を透過した光のみをレンズ19とアパーチャー20で受信して平面波にする。この光をレンズ21とアパーチャー22で受けて検出器(この図ではゴーレーセル)に集光する。光の強度信号は検出器で電気信号に変換されて計測器(この図では省略)に送られる。試料から検出器までを受光系31と呼ぶことにする。光源、試料、検出器等は、ほぼ一直線上に並んでいる。この光の進行方向をz軸にとる。光源は試料への光の入射位置を任意に変えるために、x−y自動ステージ(この図では省略)に載せてある。試料は入射角度を変えるために、自動回転ステージ(この図では省略)に載せてあり、垂直軸(y軸)の回りに自由に回転できる。検出器は最適の位置に設置できるように、x−y−z自動ステージ(この図では省略)と自動回転ステージ(この図では省略)に載せてある。試料ホルダー(この図では省略)は斜入射でも入射光を遮蔽しないように工夫をしてあり、さらに試料を透過しない光が受光系に入射することを避けるために、試料ホルダーには電波吸収体(この図では省略)を取り付けてある。試料に平行光線を入射させるときには、レンズ17と19は使わない。
Embodiments of complex permittivity measurement according to the present invention will be described with reference to the drawings.
FIG. 1 is a layout diagram of the complex
直径4インチで厚さ700μmのシリコン基板上に、厚さ10μmの熱酸化膜(SiO2)を両面に成膜し、次に、表裏の同じ位置の熱酸化膜を半月状に完全に除膜しシリコン面が露出した試料を準備した。この試料を図1の試料ホルダー上にセットした。S偏向の光を熱酸化膜の残っている面(上半分面)と、除膜した面(下半分面)に、斜入射(入射角度70度)で照射してその時の各々の透過スペクトルを測定し、それぞれT(SiO2/Si)とT(Si)と呼ぶことにする。ここで基板に対する基板上の薄膜試料の透過スペクトルの比(相対透過率=T(SiO2/Si)/T(Si))を求めた。この結果を図6に示す。この図に表れている『最大値と最小値が隣接した曲線』は、図5(a)と(b)の計算結果と定性的に良く一致をしている。 A 10 μm thick thermal oxide film (SiO 2 ) is deposited on both sides of a 4 inch diameter silicon substrate with a thickness of 700 μm. A sample with the exposed silicon surface was prepared. This sample was set on the sample holder of FIG. S-polarized light is applied to the remaining surface of the thermal oxide film (upper half surface) and the surface of the film removed (lower half surface) at an oblique incidence (incident angle of 70 degrees). Measure and call them T (SiO 2 / Si) and T (Si), respectively. Here, the ratio of the transmission spectrum of the thin film sample on the substrate to the substrate (relative transmittance = T (SiO 2 / Si) / T (Si)) was obtained. The result is shown in FIG. The “curve in which the maximum value and the minimum value are adjacent” appearing in this figure agrees qualitatively well with the calculation results of FIGS.
段落[0035]と同じ試料で、入射角度を変えて測定した結果を図7に示す。この測定結果では、入射角度が0度〜40度の間では相対透過率にほとんど差が無くて、60度、70度、80度、そして85度と入射角度を増加させると相対透過率に表れている構造が成長している。この入射角度依存性も図5(a)と(b)の計算結果と良く一致をしている。 FIG. 7 shows the measurement results of the same sample as in paragraph [0035] with the incident angle changed. In this measurement result, there is almost no difference in the relative transmittance when the incident angle is between 0 ° and 40 °, and it appears in the relative transmittance when the incident angle is increased to 60 °, 70 °, 80 °, and 85 °. The structure is growing. This incident angle dependence is also in good agreement with the calculation results of FIGS. 5 (a) and 5 (b).
一様な厚さ700μmのシリコン基板を図1の試料ホルダーにセットして、試料への入射角度を85度に設定した。次に、試料面に垂直で中心を通る軸の回りで試料を回転させながら、各角度で試料の上半分面の透過スペクトルと下半分面の透過スペクトルを測定し、それらのスペクトルの比(相対透過率)を計算した。この結果を図8に示してある。この図では、試料の中心軸の回りでの回転角度をパラメータとしている。この図に表れている『最大値と最小値が隣接した曲線』は、基板が完全に平坦でないためである。 A silicon substrate having a uniform thickness of 700 μm was set on the sample holder shown in FIG. 1, and the incident angle on the sample was set to 85 degrees. Next, while rotating the sample around an axis perpendicular to the sample surface and passing through the center, the transmission spectrum of the upper half surface and the lower half surface of the sample are measured at each angle, and the ratio of the spectra (relative) Transmittance) was calculated. The result is shown in FIG. In this figure, the rotation angle around the central axis of the sample is used as a parameter. The “curve in which the maximum value and the minimum value are adjacent” shown in this figure is because the substrate is not completely flat.
本発明は、今後開発が期待されている高周波領域(30GHz〜3THz)で、従来物質や新物質の複素誘電率の測定技術である。この領域で、新しい高周波デバイス開発のためには、薄膜の複素誘電率の測定が必要不可欠であること、さらに、本発明はこの周波数領域で薄膜の厚さが1μm以下でも複素誘電率が測定できる技術であるので、実際の半導体産業の製造現場でin situの製品管理のための装置として実用化できる。さらに、実際半導体産業で使われている半導体ウェーハの平坦度は1μmより大きいために、従来のような単なる高感度複素誘電率測定装置とことなり、本発明では、基板の平坦度と基板上の薄膜の複素誘電率の両方を同じ測定装置で測定して、薄膜の厚さが1μm以下でも複素誘電率が測定できる方法および装置を提供する。 The present invention is a technique for measuring a complex dielectric constant of a conventional material or a new material in a high-frequency region (30 GHz to 3 THz) that is expected to be developed in the future. In this region, it is indispensable to measure the complex dielectric constant of a thin film in order to develop a new high-frequency device. Furthermore, the present invention can measure the complex dielectric constant even if the thickness of the thin film is 1 μm or less in this frequency region. Since it is a technology, it can be put to practical use as an apparatus for in-situ product management at the actual manufacturing site of the semiconductor industry. Furthermore, since the flatness of the semiconductor wafer actually used in the semiconductor industry is larger than 1 μm, it becomes a conventional high-sensitivity complex dielectric constant measuring apparatus as in the past. Provided is a method and an apparatus capable of measuring a complex dielectric constant of a thin film with the same measuring apparatus and measuring the complex dielectric constant even when the thickness of the thin film is 1 μm or less.
10 複素誘電率測定装置
11 試料
12 光源
13 検出器
14 メカニカルチョッパ
15、17、19、21 レンズ
16、18、20、22 アパーチャー
30 入射系
31 受光系
DESCRIPTION OF
Claims (2)
該試料は、平板であり、試料面に垂直で試料の中心を通る中心軸の回りに回転可能に支持されており、該試料面に斜めより光が照射され、該中心軸の回りでの種々の回転角度において、該試料の上半分面の透過スペクトルと下半分面の透過スペクトルを測定し、該スペクトルの比である相対透過率を求め、該試料の平坦度を求めることを特徴とする試料の平坦度測定方法。 A method for measuring the flatness of a sample, comprising:
The sample is a flat plate, is rotatably supported about a central axis passing through the center of the sample perpendicular to the sample surface, it is irradiated with light obliquely to the sample surface, at about the central axis The transmission spectrum of the upper half surface and the lower half surface of the sample is measured at various rotation angles, the relative transmittance which is the ratio of the spectrum is obtained, and the flatness of the sample is obtained. A method for measuring the flatness of a sample.
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WO2005050177A1 (en) * | 2003-11-20 | 2005-06-02 | National Institute Of Advanced Industrial Science And Technology | Method and instrument for measuring complex dielectric constant of sample by optical spectrum measurement |
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JPS56111405A (en) * | 1980-02-06 | 1981-09-03 | Unitika Ltd | Method and device for measuring thickness of transparent film |
JPS58160804A (en) * | 1982-03-19 | 1983-09-24 | Hitachi Ltd | Measuring device of uneven thickness for transparent disc |
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