JP4506553B2 - Method for manufacturing diaphragm type semiconductor device - Google Patents

Description

  The present invention relates to a method for manufacturing a diaphragm type semiconductor device in which a predetermined region including a diaphragm portion is cut out from a bonded body of a semiconductor wafer and a glass substrate on which a plurality of diaphragm portions are formed.

  As a diaphragm type semiconductor device in which a membrane-like diaphragm portion is formed, a semiconductor pressure sensor (Patent Documents 1 and 2), a semiconductor acceleration sensor, an infrared sensor, a flow rate sensor, and the like are known. An example of a manufacturing method of these semiconductor devices is disclosed in, for example, Japanese Patent No. 3613838 (Patent Document 3).

  3A and 3B are schematic cross-sectional views of the semiconductor pressure sensor disclosed in Patent Documents 1 and 2, respectively.

The semiconductor pressure sensors 90a and 90b shown in FIGS. 3A and 3B are diaphragm type semiconductors in which membrane-like diaphragm portions 9a and 9b are formed by etching the back surfaces of the semiconductor substrates 3a and 3b. It is a pressure sensor. Bridge-connected p-type piezoresistive portions 5a and 5b are disposed on the surfaces of the n-type semiconductor substrates 3a and 3b in the diaphragm portions 9a and 9b. The bridge-connected p-type piezoresistors 5a and 5b detect deformation strains of the diaphragms 9a and 9b, and detect the pressure of the medium to be measured applied to the diaphragms 9a and 9b. The semiconductor pressure sensor 90a, the 90b, respectively, the semiconductor substrate 3a, the glass substrate 1 a, 1 b as the base on the back side of the 3b are joined.

The semiconductor pressure sensor 90a in FIG. 3A is a back surface pressure-receiving diaphragm type semiconductor pressure sensor. In the semiconductor pressure sensor 90a of the back pressure, corresponding to the cavity portion 8a by etching formed on the back side, through holes ha on the glass substrate 1 a is formed, the cavity portions 8a through the through hole ha The pressure of the medium to be measured such as air, water, oil introduced is detected.

On the other hand, the semiconductor pressure sensor 90b shown in FIG. 3B is a surface pressure-receiving diaphragm type semiconductor pressure sensor. In the semiconductor pressure sensor 90b of the surface pressure, the cavity 8b is a glass substrate 1 b by etching is formed on the back surface side of the semiconductor substrate 3b are vacuum sealed, air introduced into the front surface of the semiconductor substrate 3b, water The pressure of the medium to be measured such as oil is detected. In the semiconductor pressure sensor 90b of the surface pressure receiving, since the cavity 8b is sealed in a vacuum, the absolute pressure of the medium to be measured can be measured.

4A to 4D are views showing a conventional manufacturing method of the semiconductor pressure sensor 90a shown in FIG. In the manufacture of a semiconductor device, not limited to the semiconductor pressure sensor 90a shown in FIG. 3A, a semiconductor device is generally formed on a semiconductor wafer and finally cut into chips to manufacture the semiconductor device. The semiconductor pressure sensor 90a shown in FIG. 3 (a) is a glass substrate 1 a is joined to the rear surface side of the semiconductor substrate 3a, the preparation is carried out as follows.

  4A and 4B are top views of the individually manufactured semiconductor wafer 30a and glass substrate 10a used for manufacturing the semiconductor pressure sensor 90a, respectively.

  The semiconductor wafer 30a and the glass substrate 10a shown in FIGS. 4 (a) and 4 (b) are positioned and bonded together as shown in FIGS. 4 (c) and 4 (d), and then in a lattice shape indicated by thin broken lines. Cut along the orthogonal lines to manufacture each chip of the semiconductor pressure sensor 90a.

  On the entire surface of the semiconductor wafer 30a shown in FIG. 4A, a repeated structure of the semiconductor pressure sensor 90a having a period surrounded by a thin broken line is formed. In the figure, for the sake of simplicity, only the diaphragm portion 9a in the central portion of the semiconductor wafer 30a formed in a membrane shape by etching the back side is shown by a dotted line. In addition, a line indicated by a thin broken line that is a guideline for cutting is formed simultaneously with the aluminum wiring in the semiconductor wafer 30a by using a photolithography process at the time of forming the aluminum wiring.

  One straight cut portion Wo on the outer periphery of the semiconductor wafer 30a is an orientation flat, and the remaining two straight cut portions Kw1 and Kw2 are reference cut portions for positioning with the glass substrate 10a. The reference cut portions Kw1 and Kw2 are formed along a line indicated by a thin broken line that is a guide for cutting orthogonal to the lattice shape, and the reference cut portions Kw1 and Kw2 are orthogonal to each other. Note that the thin broken line, which serves as a guide for cutting, is formed slightly rotated with respect to the orientation flat Wo, and the reference cut portions Kw1, Kw2 are also formed slightly rotated with respect to the orientation flat Wo.

  On the entire surface of the glass substrate 10a shown in FIG. 4B, a repeating structure having a period surrounded by a thin broken line is formed corresponding to the repeating structure of the semiconductor pressure sensor 90a formed on the semiconductor wafer 30a. ing. In the drawing, for simplification, only the through hole ha in the central portion of the glass substrate 10a corresponding to the diaphragm portion 9a formed in the semiconductor wafer 30a is shown by a solid line. Note that the two straight cut portions Kg1 and Kg2 on the outer periphery of the glass substrate 10a are positioned corresponding to the reference cut portions Kw1 and Kw2 of the semiconductor wafer 30a in order to be positioned with the semiconductor wafer 30a. It is a cut part. Further, the reference cut portions Kg1 and Kg2 in the glass substrate 10a are also cut by the wafer dicer along the lines indicated by the thin broken lines formed by using the photolithography process, similarly to the reference cut portions Kw1 and Kw2 in the semiconductor wafer 30a. Formed.

  FIG. 4C and FIG. 4D are diagrams showing a positioning process and a bonding process of the semiconductor wafer 30a and the glass substrate 10a.

  As shown in FIG. 4C, the positioning of the semiconductor wafer 30a and the glass substrate 10a is performed using a holding jig J. In the holding jig J, reference guide surfaces K1, K2 orthogonal to each other are formed corresponding to the reference cut portions Kw1, Kg1 and the reference cut portions Kw2, Kg2 of the semiconductor wafer 30a and the glass substrate 10a. The semiconductor wafer 30a and the reference cut portions Kw1 and Kg1 and the reference cut portions Kw2 and Kg2 of the semiconductor wafer 30a and the glass substrate 10a are brought into contact with and overlapped with the reference guide surfaces K1 and K2, thereby positioning the semiconductor wafer 30a and the glass substrate 10a.

  FIG. 4D shows the semiconductor wafer 30a and the glass substrate 10a superimposed on the holding jig J. In the state of FIG. 4D, the semiconductor wafer 30a and the glass substrate 10a are bonded to each other by anodic bonding.

  Lastly, the bonded assembly of the semiconductor wafer 30a and the glass substrate 10a is cut along a line indicated by a thin broken line in the drawing to manufacture each chip of the semiconductor pressure sensor 90a.

Note that the surface pressure-receiving diaphragm type semiconductor pressure sensor shown in FIG. 3B can be manufactured in the same manner by using the manufacturing method shown in FIGS.
Japanese Patent No. 2871064 JP 2004-109112 A Japanese Patent No. 3613838

  In the method of manufacturing the semiconductor pressure sensor 90a shown in FIGS. 4A to 4D, in order to position the semiconductor wafer 30a and the glass substrate 10a, the reference cut portions Kw1, It is necessary to form Kw2 and reference cut portions Kg1, Kg2. In addition, the portions cut from the original semiconductor wafer and the glass substrate for forming the reference cut portions Kw1 and Kw2 are not used for manufacturing the semiconductor pressure sensor 90a, and the utilization efficiency of the semiconductor wafer and the glass substrate is low.

  Furthermore, the semiconductor wafer 30a and the glass substrate 10a cut as shown in FIGS. 4A and 4B have shapes that do not satisfy the “minimum wafer dimension” of the SEMI (Semiconductor Equipments and Materials International) standard. Therefore, the semiconductor wafer 30a and the glass substrate 10a are lifted or dropped from the Teflon (registered trademark) carrier in the cleaning process, the wet etching process, or the drying process using centrifugal force up to FIGS. 4 (c) and 4 (d). Or problems such as cracks are likely to occur.

  SUMMARY OF THE INVENTION Accordingly, an object of the present invention is a method for manufacturing a diaphragm type semiconductor device, in which a predetermined region including a diaphragm portion is cut out from a bonded body of a semiconductor wafer and a glass substrate on which a plurality of diaphragm portions are formed. And a method for manufacturing a diaphragm-type semiconductor device, in which the use efficiency of the glass substrate is high, these can be easily positioned and can be manufactured at low cost, and troubles due to dropping or the like during the manufacturing are unlikely to occur. It is in.

According to the first aspect of the present invention, the back surface side of the semiconductor wafer is etched to form a plurality of membrane-like diaphragm portions, and a glass substrate is bonded to the back surface side of the semiconductor wafer. A method of manufacturing a diaphragm type semiconductor device by cutting out a predetermined region including the diaphragm portion from a joined body to form a chip of each semiconductor device, wherein the etching cavity formed on the back surface side of the plurality of diaphragm portions A through hole is formed in the glass substrate corresponding to the portion , and after dispersing beads on the cavity on the back side of the semiconductor wafer or the through hole in the glass substrate, the glass to be bonded The substrate or semiconductor wafer is stacked, and the beads are inserted between the cavity and the through hole, and the beads are inserted and specified. The through hole and the cavity and a reference cavity and the glass reference portion for positioning respectively, by two or more of the reference cavity the glass reference portion, while positioning and fixing the glass substrate and the semiconductor wafer, The semiconductor wafer and the glass substrate are bonded together.

According to this, a plurality of cavities formed on the back surface side of the semiconductor wafer using the cavities formed by etching on the back surface side of the diaphragm type semiconductor device obtained from a single semiconductor wafer, or the cavity portions After dispersing the beads on the through holes formed in the glass substrate corresponding to the above, the glass substrate or semiconductor wafer to be joined is overlaid, and the beads are inserted between the cavity and the through holes, and the beads are inserted. Then, the semiconductor wafer and the glass substrate are positioned and joined by two or more reference cavities and glass reference parts, respectively, with the cavity part and the through hole specified as the reference cavity part and glass reference part for positioning. Therefore, it is not necessary to form a reference cut portion for positioning unlike the conventional semiconductor wafer and glass substrate. Accordingly, the cutting process is not required and the manufacturing can be performed at a low cost, and the utilization efficiency of the semiconductor wafer and the glass substrate can be increased. Further, since the reference cut portion is not formed in the semiconductor wafer and the glass substrate, the semiconductor wafer and the glass substrate satisfy the “minimum wafer size” of SEMI (Semiconductor Equipments and Materials International) standard. For this reason, the malfunction by the fall from the Teflon (trademark) carrier in the middle of manufacture of a semiconductor wafer and a glass substrate can be prevented.
Further, in the above manufacturing method, it is not necessary to specify the positioning point at a preset position. After the beads are scattered over the cavity of the semiconductor wafer or the through hole of the glass substrate, the glass substrate or the semiconductor wafer is overlaid. Position. Therefore, since the semiconductor wafer and the glass substrate are positioned at two or more arbitrary multiple points, stable positioning and bonding can be performed, and this can also prevent problems such as dropping during the manufacturing.

  As described above, the above manufacturing method is a method for manufacturing a diaphragm type semiconductor device in which a predetermined region including a diaphragm portion is cut out and manufactured from an assembly of a semiconductor wafer and a glass substrate on which a plurality of diaphragm portions are formed. Thus, the use efficiency of the semiconductor wafer and the glass substrate is high, the manufacturing method can be inexpensively performed, and the manufacturing method is unlikely to cause problems due to dropping or the like during the manufacturing.

Method of manufacturing a diaphragm semiconductor device according to claim 1, as claimed in claim 2, wherein the diaphragm semiconductor device is suitable when a diaphragm type semiconductor pressure sensor of the back pressure. In the diaphragm pressure type semiconductor pressure sensor of the back pressure receiving, a plurality of through holes are formed in the glass substrate corresponding to each of the plurality of cavities in the semiconductor wafer. Therefore, it is possible to the said glass reference portion as a reference cavity, wherein the plurality of cavities and through holes corresponding to the positioning. As described above, the diaphragm-type semiconductor pressure sensor receiving pressure on the back surface is particularly effective because it does not require a new step of forming the glass reference portion in the manufacturing method.

According to a third aspect of the present invention, in the manufacturing method of the diaphragm type semiconductor device, the diaphragm type semiconductor device is a surface pressure-receiving diaphragm type semiconductor pressure sensor, and the beads are dispersed on the glass substrate . after, to the area except the through hole is formed that is identified as the glass reference portion, when the penetrations holes are not formed can also be applied.

In addition, anodic bonding can be used for bonding the semiconductor wafer and the glass substrate, for example, as described in claim 4 .

  The present invention etches the back surface side of a semiconductor wafer to form a plurality of membrane-like diaphragm portions, bonds a glass substrate to the back surface side of the semiconductor wafer, and forms a diaphragm portion from the joined body of the semiconductor wafer and the glass substrate. This is a method for manufacturing a diaphragm type semiconductor device, in which a predetermined region is cut out to form a chip of each semiconductor device. As a diaphragm type semiconductor device in which a membrane-like diaphragm portion is formed, for example, there are a semiconductor pressure sensor, a semiconductor acceleration sensor, an infrared sensor, a flow rate sensor and the like shown in FIGS. Hereinafter, the best mode for carrying out the present invention will be described with reference to the drawings, taking the semiconductor pressure sensor 90a of FIG.

FIGS. 1A to 1D are views showing a method of manufacturing the semiconductor pressure sensor 90a of FIG. 3A according to the present invention, and are diagrams for explaining a basic part of a method of manufacturing a diaphragm type semiconductor device according to the present invention. is there.

  FIGS. 1A and 1B are top views of a semiconductor wafer 31a and a glass substrate 11a that are individually manufactured and used for manufacturing the semiconductor pressure sensor 90a, respectively.

  The semiconductor wafer 31a and the glass substrate 11a shown in FIGS. 1 (a) and 1 (b) are positioned and bonded together as shown in FIGS. 1 (c) and 1 (d), and then in a lattice shape shown by thin broken lines. Cut along the orthogonal lines to manufacture each chip of the semiconductor pressure sensor 90a.

  Similar to the semiconductor wafer 30a shown in FIG. 4A, a repetitive structure of the semiconductor pressure sensor 90a having a period surrounded by a thin broken line is formed on the entire surface of the semiconductor wafer 31a shown in FIG. ing. In the figure, for simplification, only the diaphragm portion 9a in the central portion of the semiconductor wafer 31a formed in a membrane shape by etching the back side is shown by a dotted line. Further, a line indicated by a thin broken line, which is a guideline for cutting, is formed simultaneously with the aluminum wiring in the semiconductor wafer 31a by using a photolithography process at the time of forming the aluminum wiring.

  In the semiconductor wafer 31a of FIG. 1A, the reference cut portions Kw1 and Kw2 for positioning, which are the same as those of the semiconductor wafer 30a of FIG. 4A used in the conventional manufacturing method, are not formed. Therefore, only the linear flat cut portion Wo of the orientation flat exists on the outer periphery of the semiconductor wafer 31a in FIG.

  Also on the entire surface of the glass substrate 11a shown in FIG. 1B, a repetitive structure having a period surrounded by a thin broken line is formed corresponding to the repetitive structure of the semiconductor pressure sensor 90a formed on the semiconductor wafer 31a. ing. In the drawing, for simplification, only the through hole ha in the central portion of the glass substrate 11a corresponding to the diaphragm portion 9a formed in the semiconductor wafer 31a is shown by a solid line.

  As in the case of the semiconductor wafer 31a of FIG. 1A, the glass substrate 11a of FIG. 1B is also used for positioning, which was on the glass substrate 10a of FIG. 4B used in the conventional manufacturing method. The reference cut portions Kg1 and Kg2 are not formed.

  FIG. 1C and FIG. 1D are diagrams showing a positioning process and a bonding process of the semiconductor wafer 31a and the glass substrate 11a.

The positioning of the semiconductor wafer 31a and the glass substrate 11a is performed by, for example , three about 120 degrees shown in FIG. 1C among the cavity portions formed by etching on the back surface side of the plurality of diaphragm portions 9a in the semiconductor wafer 31a. clear screen a cavity K8a1~K8a3 in the positional relationship as a reference cavity for positioning. A semiconductor pressure sensor 90a shown in FIG. 3A is a diaphragm-type semiconductor pressure sensor that receives pressure on the back surface. Also in the glass substrate 11a shown in FIG. 1B, through holes Kha1 to Kha3 corresponding to the reference cavities K8a1 to K8a3. Is used as a glass reference part. Positioning is performed by the reference cavities K8a1 to K8a3 and the glass reference parts Kha1 to Kha3, and the semiconductor wafer 31a and the glass substrate 11a are overlaid as shown in FIG. The selection of the reference cavity portion and the glass reference portion is not limited to three, and may be any two or more.

  FIG. 1D shows the semiconductor wafer 31a and the glass substrate 11a that are overlaid. In the state of FIG. 1D, the semiconductor wafer 31a and the glass substrate 11a are bonded to each other by anodic bonding.

  Finally, the bonded assembly of the semiconductor wafer 31a and the glass substrate 11a is cut along a line indicated by a thin broken line in the drawing to manufacture each chip of the semiconductor pressure sensor 90a.

  According to the manufacturing method shown in FIGS. 1 (a) to 1 (d), the cavity 8a by etching on the back surface side of the semiconductor pressure sensor 90a of FIG. Then, two or more cavities 8a formed on the back surface side of the semiconductor wafer 31a are selected as reference cavities K8a1 to K8a3, and the semiconductor wafer 31a and the glass substrate 11a are positioned and bonded. Therefore, unlike the conventional semiconductor wafer 30a and glass substrate 10a shown in FIGS. 4A and 4B, it is not necessary to form the reference cut portions Kw1, Kw2, Kg1, and Kg2 for positioning. Therefore, the cutting process is not required and the manufacturing can be made at low cost, and the utilization efficiency of the semiconductor wafer 31a and the glass base 11a can be increased. Further, since the reference cut portions Kw1, Kw2, Kg1, and Kg2 are not formed on the semiconductor wafer 31a and the glass substrate 11a, the semiconductor wafer and the glass substrate satisfy the “minimum wafer dimension” of SEMI (Semiconductor Equipments and Materials International) standard. ing. Therefore, unlike the conventional semiconductor wafer 30a and the glass substrate 10a shown in FIGS. 4A and 4B, there is a problem caused by dropping from the Teflon (registered trademark) carrier during the production of the semiconductor wafer 31a and the glass substrate 11a. Can be prevented.

The above-described method for manufacturing a diaphragm type semiconductor device can also be applied to a surface pressure receiving diaphragm type semiconductor pressure sensor. For example, the diaphragm-type semiconductor pressure sensor of surface pressure is provided in each of a plurality of cavities 8a excluding the reference cavities K8a1 to K8a3 of the semiconductor wafer 31a in the glass substrate 11a shown in FIGS. 1 (a) to 1 (d). This corresponds to the case where the corresponding region has no through hole ha penetrating the glass substrate 11a. In this case as well, the reference cavities K8a1 to K8a3 of the semiconductor wafer 31a and the glass reference portions formed on the glass substrate 11a corresponding to the reference cavities K8a1 to K8a3 are similarly used in the method shown in FIGS. Can be positioned.

  As described above, the manufacturing method shown in FIGS. 1A to 1D described above includes a predetermined portion including the diaphragm portion 9a from the joined body of the semiconductor wafer 31a formed with the plurality of diaphragm portions 9a and the glass substrate 11a. A method of manufacturing a diaphragm type semiconductor device 90a that cuts out and manufactures a region. The semiconductor wafer 31a and the glass substrate 11a have high utilization efficiency, can be manufactured at low cost, and are less likely to suffer from problems such as dropping during manufacturing. It is a manufacturing method.

  Further, as described above, in the diaphragm-type semiconductor pressure sensor 90a for receiving the back surface pressure, a plurality of through holes ha are formed in the glass substrate 11 corresponding to the plurality of cavities 8a (diaphragm portions 9a) in the semiconductor wafer. Is formed. Therefore, two or more cavities K8a1 to K8a3 and the corresponding ones are selected from the plurality of cavities 8a (diaphragm portions 9a) and the corresponding through holes ha as the reference cavities and glass reference portions for positioning. The through holes Kha1 to Kha3 can be used. As described above, the back surface pressure-receiving diaphragm type semiconductor pressure sensor 90a is particularly effective because it does not require a new step of forming the glass reference portions Kha1 to Kha3 in the above manufacturing method.

  FIGS. 2A to 2C are diagrams illustrating a specific method for positioning and fixing the semiconductor wafer and the glass substrate. The reference cavity K8a of the semiconductor wafer 31a and the glass reference portions of the glass substrates 12 to 14 are illustrated. It is typical sectional drawing which expanded and showed the circumference.

FIG. 2A is an example of a manufacturing method which is not the present invention but is a reference . In FIG. 2A, in order to position and fix the semiconductor wafer 31a and the glass substrate 12, the glass reference portion is shown in FIG. In the same manner as the glass reference portions Kha1 to Kha3 in FIG. The pin P is inserted into the reference cavity K8a of the semiconductor wafer 31a through the through hole Kh12, and the semiconductor wafer 31a and the glass substrate 12 are positioned and fixed. As described above, by using the pins P, the semiconductor wafer 31a and the glass substrate 12 can be easily positioned, and a diaphragm type semiconductor device that is cut and manufactured therefrom can be manufactured at low cost.

FIG. 2B is an example of the manufacturing method according to the present invention . In FIG. 2B as well, in order to position and fix the semiconductor wafer 31a and the glass substrate 13, the glass reference portion is the glass in FIG. Similar to the reference portions Kha <b> 1 to Kha <b> 3, the through hole Kh <b> 13 penetrates the glass substrate 13. In FIG. 2B, a ball-shaped bead B is inserted between the through hole Kh13 and the reference cavity K8a of the semiconductor wafer 31a, and the semiconductor wafer 31a and the glass substrate 13 are positioned and fixed.

  As described above, in the positioning and fixing using the beads B, it is not necessary to specify the positioning point at a preset position. For example, like the semiconductor wafer 31a and the glass substrate 11a shown in FIGS. 1A and 1B, the beads B are formed on the cavity 8a on the back side of the semiconductor wafer 31a or on the through holes ha on the glass substrate 11a. After the dispersion, the glass substrate 11a or the semiconductor wafer 31a can be stacked and positioned. Therefore, since the semiconductor wafer 31a and the glass substrate 11a are positioned at any number of points, stable positioning and bonding can be performed, and problems such as dropping during manufacturing can be further suppressed. The beads B may be removed using heat or a solvent after joining the semiconductor wafer 31a and the glass substrate 11a.

FIG. 2C is an example of a manufacturing method which is not the present invention but is a reference . In FIG. 2C, in order to position and fix the semiconductor wafer 31a and the glass substrate 14, the glass reference portion is formed on the glass substrate 14. A convex portion K14 is provided on the bonding surface side with the semiconductor wafer 31a and can be inserted into the reference cavity K8a of the semiconductor wafer 31a. The convex portion K14 is inserted into the reference cavity K8a, and the semiconductor wafer 31a and the glass substrate 14 are positioned and fixed. According to this, it is possible to cope with the case where the through holes as shown in FIGS. 2A and 2B cannot be formed in the glass substrate 14 as the glass reference portion.

  As described above, the above-described method for manufacturing a diaphragm type semiconductor device includes a diaphragm type semiconductor manufactured by cutting out a predetermined region including a diaphragm portion from a bonded body of a semiconductor wafer and a glass substrate on which a plurality of diaphragm portions are formed. A method for manufacturing an apparatus, in which the use efficiency of a semiconductor wafer and a glass substrate is high, these can be easily positioned and manufactured at low cost, and troubles due to dropping during the manufacturing are unlikely to occur. It can be set as a manufacturing method of a type semiconductor device.

(A)-(d) is a figure which shows the manufacturing method of the semiconductor pressure sensor 90a of Fig.3 (a) by this invention, and is a figure explaining the basic part of the manufacturing method of the diaphragm type semiconductor device by this invention . (A), (b) is a top view of the individually manufactured semiconductor wafer 31a and the glass substrate 11a used for manufacturing the semiconductor pressure sensor 90a, respectively. (C) and (d) are the semiconductor wafer 31a. It is a figure which shows the positioning process and joining process of a glass substrate 11a. (A)-(c) is a figure explaining the specific method of positioning and fixing a semiconductor wafer and a glass substrate, The circumference | surroundings of the reference | standard cavity part K8a of the semiconductor wafer 31a and the glass reference part of each glass substrate 12-14 are carried out. It is the typical sectional view expanded and shown. (A), (c) is an example of the manufacturing method which is not the present invention but is a reference, and (b) is an example of the manufacturing method according to the present invention. (A), (b) is typical sectional drawing of the semiconductor pressure sensor indicated by patent documents 1, 2, respectively. (A)-(d) is a figure which shows the conventional manufacturing method of the semiconductor pressure sensor 90a shown to Fig.3 (a).

Explanation of symbols

90a, 90b Semiconductor pressure sensor (diaphragm type semiconductor device)
31a Semiconductor wafer 8a, 8b Cavity part 9a, 9b Diaphragm part K8a1 to K8a3, K8a Reference cavity part 11a, 12-14 Glass substrate ha Through hole Kha1 to Kha3, Kh12, Kh13 Glass reference part (through hole)
Kh14 Glass reference part (convex part)
P pin B beads

Claims (4)

Etching the back side of the semiconductor wafer to form a plurality of membrane-like diaphragm parts, and bonding a glass substrate to the back side of the semiconductor wafer,
A method for manufacturing a diaphragm type semiconductor device, wherein a predetermined region including the diaphragm portion is cut out from a bonded body of the semiconductor wafer and the glass substrate, and used as a chip of each semiconductor device,
The plurality of corresponding to the cavity portion by the etching is formed on the back surface side of the diaphragm portion, a through hole is formed on the glass substrate,
After dispersing beads on the cavity on the back side of the semiconductor wafer or on the through hole in the glass substrate, the glass substrate or semiconductor wafer to be bonded is overlapped, and the gap between the cavity and the through hole is Inserting beads, the cavity and the through hole specified by the insertion of the beads as a reference cavity and a glass reference part for positioning, respectively,
2. Manufacturing a diaphragm type semiconductor device, wherein the semiconductor wafer and the glass substrate are bonded together with the semiconductor wafer and the glass substrate positioned and fixed by the two or more reference cavities and the glass reference portion. Method. The diaphragm type semiconductor device is a back surface pressure-receiving diaphragm type semiconductor pressure sensor,
2. The method of manufacturing a diaphragm type semiconductor device according to claim 1 , wherein a plurality of through holes are formed in the glass substrate corresponding to each of the plurality of cavities . The diaphragm type semiconductor device is a surface pressure sensing diaphragm type semiconductor pressure sensor,
In the glass substrate, after the beads are dispersed, the through hole is not formed in a region except the region in which the through hole specified as the glass reference portion is formed. A manufacturing method of a diaphragm type semiconductor device according to Item 1. The method for manufacturing a diaphragm type semiconductor device according to any one of claims 1 to 3, wherein the bonding of the semiconductor wafer and the glass substrate is anodic bonding .

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