JP4460021B2 - 圧力によって超伝導体から絶縁体へ遷移する超伝導体薄膜を用いたジョセフソン素子および超伝導量子干渉計 - Google Patents
圧力によって超伝導体から絶縁体へ遷移する超伝導体薄膜を用いたジョセフソン素子および超伝導量子干渉計 Download PDFInfo
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- JP4460021B2 JP4460021B2 JP2009213934A JP2009213934A JP4460021B2 JP 4460021 B2 JP4460021 B2 JP 4460021B2 JP 2009213934 A JP2009213934 A JP 2009213934A JP 2009213934 A JP2009213934 A JP 2009213934A JP 4460021 B2 JP4460021 B2 JP 4460021B2
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Claims (6)
- 10K以下の絶対温度に保持され、CuRh2S4からなる超伝導体薄膜と、
前記超伝導体薄膜の一部に超伝導体から絶縁体へ遷移する臨界圧力以上の圧力を印加する圧力印加器とを備え、
前記圧力印加器は、
1個以上の突起部材を有する押付部材と、
前記1個以上の突起部材が前記超伝導体薄膜の一部に前記臨界圧力以上の圧力を印加するように前記押付部材を前記超伝導体薄膜の一部に押し付ける押付手段とを含む、ジョセフソン素子。 - 前記押付手段は、回転によって前記押付部材を前記超伝導体薄膜の一部に押し付けるネジからなる、請求項1に記載のジョセフソン素子。
- 前記押付手段は、前記押付部材を前記超伝導体薄膜の一部に押し付ける電歪素子または圧電素子からなる、請求項1に記載のジョセフソン素子。
- 輪形状を有するとともに、10K以下の絶対温度に保持されたCuRh2S4からなる超伝導体薄膜と、
前記超伝導体薄膜の第1の一部分に超伝導体から絶縁体へ遷移する臨界圧力以上の圧力を印加する第1の圧力印加器と、
前記超伝導体薄膜の前記第1の一部分と異なる第2の一部分に前記臨界圧力以上の圧力を印加する第2の圧力印加器とを備え、
前記第1および第2の圧力印加器の各々は、
1個以上の突起部材を有する押付部材と、
前記1個以上の突起部材が前記超伝導体薄膜の前記第1の一部分または前記第2の一部分に前記臨界圧力以上の圧力を印加するように前記押付部材を前記超伝導体薄膜の前記第1の一部分または前記第2の一部分に押し付ける押付手段とを含む、超伝導量子干渉計。 - 前記押付手段は、回転によって前記押付部材を前記超伝導体薄膜の前記第1の一部分または前記第2の一部分に押し付けるネジからなる、請求項4に記載の超伝導量子干渉計。
- 前記押付手段は、前記押付部材を前記超伝導体薄膜の前記第1の一部分または前記第2の一部分に押し付ける電歪素子または圧電素子からなる、請求項4に記載の超伝導量子干渉計。
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JP2009525838A Division JP4394751B1 (ja) | 2008-07-31 | 2008-07-31 | 圧力によって超伝導体から絶縁体へ遷移する超伝導体薄膜を用いた圧力検出装置 |
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JP4460021B2 true JP4460021B2 (ja) | 2010-05-12 |
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