JP4372793B2 - Solar cell - Google Patents

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JP4372793B2
JP4372793B2 JP2007009960A JP2007009960A JP4372793B2 JP 4372793 B2 JP4372793 B2 JP 4372793B2 JP 2007009960 A JP2007009960 A JP 2007009960A JP 2007009960 A JP2007009960 A JP 2007009960A JP 4372793 B2 JP4372793 B2 JP 4372793B2
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substrate
layer
cell
solar cell
spherical
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JP2007103975A (en
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淳 福井
研 石田
秀芳 甲斐
啓介 木本
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Mitsui High Tech Inc
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Description

本発明は、太陽電池に係り、特に球状基板を用いた太陽電池に関する。   The present invention relates to a solar cell, and more particularly to a solar cell using a spherical substrate.

半導体のpn接合部分には内部電界が生じており、これに光を当て、電子正孔対を生成させると、生成した電子と正孔は内部電界により分離されて、電子はn側に、正孔はp側に集められ、外部に負荷を接続するとp側からn側に向けて電流が流れる。この効果を利用し、光エネルギーを電気エネルギーに変換する素子として太陽電池の実用化が進められている。   An internal electric field is generated at the pn junction portion of the semiconductor. When light is applied to the semiconductor to generate an electron-hole pair, the generated electron and hole are separated by the internal electric field, and the electron is positively connected to the n side. The holes are collected on the p side, and when a load is connected to the outside, a current flows from the p side to the n side. Utilizing this effect, solar cells are being put to practical use as elements that convert light energy into electrical energy.

近年、単結晶、多結晶シリコンなどの直径1mm以下の球状の半導体(Ball Semiconductor)上に回路パターンを形成して半導体素子を製造する技術が開発されている。   In recent years, a technique for manufacturing a semiconductor element by forming a circuit pattern on a spherical semiconductor (Ball Semiconductor) having a diameter of 1 mm or less such as single crystal or polycrystalline silicon has been developed.

その1つとして、アルミ箔を用いて多数個の半導体粒子を接続したソーラーアレーの製造方法が提案されている(特開平6-13633号)。この方法では、図6に示すように、n型表皮部とp型内部を有する半導体粒子207をアルミ箔の開口にアルミ箔201の両側から突出するように配置し、片側の表皮部209を除去し、絶縁層221を形成する。次にp型内部211の一部およびその上の絶縁層221を除去し、その除去された領域217に第2アルミ箔219を結合する。その平坦な領域217が導電部としての第2アルミ箔219に対し良好なオーミック接触を提供するようにしたものである。
特開平6−13633号公報
As one of them, a method for manufacturing a solar array in which a large number of semiconductor particles are connected using aluminum foil has been proposed (Japanese Patent Laid-Open No. 6-13633). In this method, as shown in FIG. 6, semiconductor particles 207 having an n-type skin portion and a p-type interior are arranged so as to protrude from both sides of the aluminum foil 201 in the opening of the aluminum foil, and the skin portion 209 on one side is removed. Then, the insulating layer 221 is formed. Next, a part of the p-type interior 211 and the insulating layer 221 thereon are removed, and the second aluminum foil 219 is bonded to the removed region 217. The flat region 217 provides good ohmic contact with the second aluminum foil 219 serving as a conductive portion.
JP-A-6-13633

しかしながら、このような従来の太陽電池(上記ソーラーアレー)では、p型内部211の電極は第2アルミ箔201、n型表皮部の電極はアルミ箔201であり、これら2枚のアルミ箔を接触させないように、上面のアルミ箔201の裏面をアルマイト処理をする工程や、ポリイミド等の絶縁性樹脂をコーティングする工程が必要になり、太陽電池の内側電極の形成、外側電極の形成、および、両電極間の絶縁層形成にかかる製造工程数が非常に多くなってしまい、作業性が良くないなどの問題点があった。
また、上記2枚のアルミ箔間に間隙(ギャップ)が存在するため、半導体粒子207と太陽電池の基板となるアルミ箔との固着性が悪く、信頼性に問題が生じるなどの問題点があった。
However, in such a conventional solar cell (the above solar array), the electrode of the p-type internal 211 is the second aluminum foil 201 and the electrode of the n-type skin portion is the aluminum foil 201, and these two aluminum foils are in contact with each other. In order to prevent this, a process of anodizing the back surface of the aluminum foil 201 on the upper surface and a process of coating an insulating resin such as polyimide are required. The formation of the inner electrode of the solar cell, the formation of the outer electrode, and both The number of manufacturing steps required to form an insulating layer between the electrodes is extremely large, and there is a problem that workability is not good.
In addition, since there is a gap between the two aluminum foils, there is a problem that the adhesion between the semiconductor particles 207 and the aluminum foil serving as the substrate of the solar cell is poor, and a problem arises in reliability. It was.

本発明は、上記問題点に鑑みて成されたものであり、太陽電池の内側電極の形成、外側電極の形成、および、両電極間の絶縁層形成するための工程を一工程で製造でき、基板と球体セルの固着性が良く信頼性の高い太陽電池を提供することを目的とする。   The present invention has been made in view of the above-mentioned problems, and can form a process for forming an inner electrode of a solar cell, an outer electrode, and an insulating layer between the two electrodes in one step. An object of the present invention is to provide a highly reliable solar cell with good adhesion between a substrate and a spherical cell.

本発明の第1の太陽電池は、第1導電層、絶縁層、最上層である第2導電層の三層構造からなる基板が、その表面に球体セルの形状に沿うように形成された凹部を具備し、
該凹部内に内部が第1導電型半導体層、表面が第2導電型半導体層からなる前記球体セルを有し、該球体セルの第1導電型半導体層が前記基板の第1導電層と電気的に接続されることにより内側電極が形成され、該球体セルの第2導電型半導体層が前記基板の第2導電層と電気的に接続されることにより外側電極が形成され、
前記凹部は、前記球体セルの表面の曲率よりも緩やかな曲率の凹面を具備する凹部とすることにより、前記凹面と前記球体セル表面との間に隙間を有することを特徴とする。
かかる構成によれば、基板の表面が球体セルの形状に沿って形成された凹部が、球体セルへの効率的な集光構造となるため、基板の表面からの反射光を有効に利用できる。また、球体セル内側のp型半導体層と内側電極の電極部材、および、球体セル外側のn型半導体層と外側電極の電極部材が、それぞれ導電性ペースト等を介さずに直接接合され、接合部の低抵抗化が実現できる。
The first solar cell of the present invention is a recess formed on a surface of a substrate having a three-layer structure of a first conductive layer, an insulating layer, and a second conductive layer, which is the uppermost layer, along the shape of a spherical cell. Comprising
In the recess, there is provided the spherical cell having a first conductive type semiconductor layer inside and a second conductive type semiconductor layer on the surface, and the first conductive type semiconductor layer of the spherical cell is electrically connected to the first conductive layer of the substrate. The inner electrode is formed by being connected electrically, and the second conductive semiconductor layer of the spherical cell is electrically connected to the second conductive layer of the substrate to form the outer electrode,
The concave portion is a concave portion having a concave surface with a gentler curvature than the curvature of the surface of the spherical cell, so that a gap is provided between the concave surface and the spherical cell surface.
According to such a configuration, the concave portion in which the surface of the substrate is formed along the shape of the spherical cell serves as an efficient light condensing structure for the spherical cell, so that the reflected light from the surface of the substrate can be used effectively. In addition, the p-type semiconductor layer inside the spherical cell and the electrode member of the inner electrode, and the n-type semiconductor layer outside the spherical cell and the electrode member of the outer electrode are directly joined without using a conductive paste or the like. Can be achieved.

本発明の第2は、請求項1に記載の太陽電池において、前記基板の下に弾性体を有することを特徴とする。
かかる構成によれば、弾性体により太陽電池の裏面保護をすることができる。
According to a second aspect of the present invention, in the solar cell according to the first aspect, an elastic body is provided under the substrate.
According to this configuration, the back surface of the solar cell can be protected by the elastic body.

本発明に係る太陽電池によれば、基板の表面が球体セルの形状に沿って形成された凹部が、球体セルの表面の曲率よりも緩やかな曲率の凹面を具備することにより、球体セルの表面との間に隙間を有して、球体セルへの効率的な集光構造となるため、基板の表面からの反射光を有効に利用でき、太陽電池の光電変換の効率を大きく向上させることができる。
また、球体セル内側のp型半導体層と内側電極の電極部材、および、球体セル外側のn型半導体層と外側電極の電極部材が、それぞれ導電性ペースト等を介さずに直接接合されるので、接合部の低抵抗化が実現できる。
また、基板内の絶縁層(インシュレータレジン)は加熱することにより粘着性を持ち、球体セルの基板への固定をより強固にすることができ、よって太陽電池の信頼性がより高めることができる。
According to the solar cell of the present invention, the concave portion formed on the surface of the substrate along the shape of the spherical cell has a concave surface with a gentler curvature than the curvature of the surface of the spherical cell. Since there is a gap between them and an efficient condensing structure to the spherical cell, the reflected light from the surface of the substrate can be used effectively, and the photoelectric conversion efficiency of the solar cell can be greatly improved. it can.
In addition, since the p-type semiconductor layer inside the sphere cell and the electrode member of the inner electrode, and the n-type semiconductor layer outside the sphere cell and the electrode member of the outer electrode are directly joined without using a conductive paste or the like, Low joint resistance can be realized.
In addition, the insulating layer (insulator resin) in the substrate has adhesiveness by heating, and the fixation of the spherical cell to the substrate can be made stronger, so that the reliability of the solar cell can be further improved.

以下、本発明に係る太陽電池について一実施の形態を挙げ、図面を参照して詳細に説明する。   Hereinafter, an embodiment of the solar cell according to the present invention will be described in detail with reference to the drawings.

本発明の実施形態に係る太陽電池は、図1に要部斜視図を示すように、第1導電層17a、絶縁層17b、最上層である第2導電層17cの三層構造からなるシート状の基板17が、その表面に球体セルの形状に沿うように形成された凹部17dを有しており、この凹部17dの内部に、太陽電池のセルとなる球体セル10を有しているものである。   The solar cell according to the embodiment of the present invention is a sheet-like structure having a three-layer structure of a first conductive layer 17a, an insulating layer 17b, and a second conductive layer 17c as the uppermost layer, as shown in a perspective view of a main part in FIG. The substrate 17 has a concave portion 17d formed on the surface so as to follow the shape of the spherical cell, and the spherical cell 10 serving as a solar cell is provided inside the concave portion 17d. is there.

さらに詳しく太陽電池の断面構造を説明する。図1のA−A線の断面を図2に示す。この図2に示すように、内部のp型半導体層11(第1導電型半導体層)とpn接合を形成するn型半導体層12(第2導電型半導体層)を有する球体セル10が、第1導電層17a、絶縁層17b、最上層である第2導電層17cの三層構造からなるシート状の基板17に圧着され、内部のp型半導体層11と基板17の第1導電層17aとが電気的に接続されている。これにより、第1導電層17aは、太陽電池の内側電極となっている。
また、第2導電層17cはn型半導体層12と電気的に接続され、太陽電池の外側電極となっている。
また、凹部17dは、球体セル10の表面の曲率よりも緩やかな曲率の凹面を具備することにより、球体セル10の表面との間に隙間を有する。
The cross-sectional structure of the solar cell will be described in more detail. FIG. 2 shows a cross section taken along line AA of FIG. As shown in FIG. 2, a spherical cell 10 having an n-type semiconductor layer 12 (second conductivity type semiconductor layer) that forms a pn junction with an internal p-type semiconductor layer 11 (first conductivity type semiconductor layer) includes The p-type semiconductor layer 11 inside and the first conductive layer 17a of the substrate 17 are bonded to a sheet-like substrate 17 having a three-layer structure including a first conductive layer 17a, an insulating layer 17b, and a second conductive layer 17c as the uppermost layer. Are electrically connected. Thereby, the first conductive layer 17a serves as an inner electrode of the solar cell.
The second conductive layer 17c is electrically connected to the n-type semiconductor layer 12 and serves as an outer electrode of the solar cell.
Further, the concave portion 17 d has a concave surface with a curvature that is gentler than the curvature of the surface of the spherical cell 10, thereby providing a gap with the surface of the spherical cell 10.

次に、本発明の実施形態に係る太陽電池の具体的な製造方法の一例を以下、説明する。
まず、本実施の形態で用いる球体セル10の形成方法の一例について説明する。
直径1mmのp型多結晶シリコン粒を真空中で加熱しつつ落下させ、結晶性の良好なp型多結晶シリコン球(p型半導体層)11を形成し、この表面に、フォスフィンを含むシランなどの混合ガスを用いたCVD法により、n型多結晶シリコン層(n型半導体層)12を形成する。ここでCVD工程は細いチューブ内でシリコン球を搬送しながら、所望の反応温度に加熱されたガスを供給排出することにより、薄膜形成を行うものである。
Next, an example of a specific method for manufacturing a solar cell according to an embodiment of the present invention will be described below.
First, an example of a method for forming the spherical cell 10 used in the present embodiment will be described.
A p-type polycrystalline silicon particle having a diameter of 1 mm is dropped while being heated in a vacuum to form a p-type polycrystalline silicon sphere (p-type semiconductor layer) 11 having good crystallinity, and silane containing phosphine is formed on the surface. An n-type polycrystalline silicon layer (n-type semiconductor layer) 12 is formed by a CVD method using the above mixed gas. Here, in the CVD process, a thin film is formed by supplying and discharging a gas heated to a desired reaction temperature while carrying a silicon sphere in a thin tube.

なお、この工程は、p型多結晶シリコン粒を真空中で加熱しつつ落下させながら球状化し、p型多結晶シリコン球(p型半導体層)11を形成するとともに、落下途上で所望のガスと接触させることにより、n型多結晶シリコン層(n型半導体層)12を形成する様にすることも可能である。   In this step, the p-type polycrystalline silicon grains are spheroidized while being heated and dropped in vacuum to form a p-type polycrystalline silicon sphere (p-type semiconductor layer) 11 and a desired gas in the course of dropping. It is also possible to form an n-type polycrystalline silicon layer (n-type semiconductor layer) 12 by contacting them.

次に、上述の球体セル10を用いた太陽電池の製造方法を図3、図4、図5を用いて説明する。図3は球体セルを加工する工程の概略断面図であり、図4は加工した球体セルを基板に搭載し、太陽電池を形成する工程の概略断面図である。図5は三層構造からなる基板の概略斜視図である。   Next, a method for manufacturing a solar cell using the above-described spherical cell 10 will be described with reference to FIGS. 3, 4, and 5. FIG. 3 is a schematic cross-sectional view of a process of processing a spherical cell, and FIG. 4 is a schematic cross-sectional view of a process of mounting the processed spherical cell on a substrate to form a solar cell. FIG. 5 is a schematic perspective view of a substrate having a three-layer structure.

球体セルを加工する工程を図3を用いて説明する。
まず、一定間隔を空けて縦横等間隔に球体セルを並べるために設けられた窪みを有するトレイTを用意する。
図3の(a)にこのトレイTの概略断面図を示す。
The process of processing the spherical cell will be described with reference to FIG.
First, a tray T having depressions provided for arranging spherical cells at regular intervals at regular intervals is prepared.
FIG. 3A shows a schematic cross-sectional view of the tray T.

次に、図3の(b)に示すように、球体セル10をトレイTの窪みに載置する。   Next, as shown in FIG. 3B, the spherical cell 10 is placed in the recess of the tray T.

次に、図3の(c)に示すように、球体セル10が埋まるように、ろう剤(例えば、パラフィン等のエレクトロンワックス)からなる固定部材13を溶融温度(パラフィンの場合は100℃〜200℃)に熱して溶融させて流し込み、温度を下げて硬化させる。   Next, as shown in FIG. 3C, the fixing member 13 made of a brazing agent (for example, an electron wax such as paraffin) is melted at a melting temperature (100 ° C. to 200 ° C. in the case of paraffin) so that the spherical cell 10 is filled. C.), melt and pour, lower the temperature and cure.

次に、図3の(d)に示すように、トレイTから固定部材13により固定された球体セル10を取り出し、逆向きにする。   Next, as shown in FIG. 3D, the spherical cell 10 fixed by the fixing member 13 is taken out from the tray T and turned in the reverse direction.

次に、図3の(e)に示すように、球体セル10が固定部材13に覆われていない部分に対し、エッチング等を施すことにより表面のn型半導体層12を除去し、内部のp型半導体層11を露出させる。あるいは、上記固定部材13に覆われていない部分をグラインディング等により研削することで、内部のp型半導体層11を露出させても良い。   Next, as shown in FIG. 3 (e), the n-type semiconductor layer 12 on the surface is removed by etching or the like on the portion where the spherical cell 10 is not covered with the fixing member 13, and the internal p The mold semiconductor layer 11 is exposed. Alternatively, the inner p-type semiconductor layer 11 may be exposed by grinding a portion not covered with the fixing member 13 by grinding or the like.

次に、加工した球体セルを基板に搭載し、太陽電池を形成する工程を図4、図5を用いて説明する。
まず、図5に示すように、第1導電層17a(例えば、アルミニウム等)、絶縁層17b(例えば、インシュレータレジン等)、第2導電層17c(例えば、アルミニウム等)の三層構造からなり、球体セル10を載置する箇所が内部の二層が露出するように円形の加工が施されたシート状の基板17を用意する。
Next, the process of mounting the processed spherical cell on a substrate and forming a solar cell will be described with reference to FIGS.
First, as shown in FIG. 5, it has a three-layer structure of a first conductive layer 17a (for example, aluminum), an insulating layer 17b (for example, insulator resin), and a second conductive layer 17c (for example, aluminum). A sheet-like substrate 17 is prepared which is circularly processed so that the two layers inside the place where the spherical cell 10 is placed are exposed.

次に、図4の(a)の概略断面図に示すように、上述のように加工した球体セル10と、上記の三層構造の基板17とを位置合わせし、弾性体14(例えば、エラストマ等)を基板17の下に敷くように配置する。   Next, as shown in the schematic cross-sectional view of FIG. 4A, the spherical cell 10 processed as described above and the substrate 17 having the three-layer structure are aligned, and an elastic body 14 (for example, an elastomer) is aligned. Etc.) is placed under the substrate 17.

次に、上記の球体セル10、基板17、弾性体14を重ね合わせて、約150℃に加熱し、プレス装置等を用いて約1時間上部より加圧する。基板17の下部に弾性体14を敷くことにより、球体セル10の形状に沿って、基板17が変形し、凹部17dが形成され、図4の(b)の状態となる。
次に、加圧した状態のまま、焼結(シンタリング)処理を行う。この焼結(シンタリング)処理の加熱温度は200℃〜300℃、加圧時間は30分〜1時間、無酸素雰囲気中にて行うことが好ましい。
Next, the spherical cell 10, the substrate 17, and the elastic body 14 are overlaid, heated to about 150 ° C., and pressed from above for about 1 hour using a press device or the like. By laying the elastic body 14 below the substrate 17, the substrate 17 is deformed along the shape of the spherical cell 10 to form a recess 17 d, and the state shown in FIG. 4B is obtained.
Next, a sintering (sintering) process is performed in the pressurized state. The sintering (sintering) treatment is preferably performed at a heating temperature of 200 ° C. to 300 ° C., a pressing time of 30 minutes to 1 hour in an oxygen-free atmosphere.

次に、加圧を解除し、冷却後、上面の固定部材13を熱または薬品(例えば、アセトン)を用いて除去するか、あるいは、加圧した状態で同様の方法で除去する。これにより、図4の(c)の状態となる。   Next, the pressure is released, and after cooling, the fixing member 13 on the upper surface is removed using heat or chemicals (for example, acetone), or removed in the same manner in a pressurized state. As a result, the state shown in FIG.

最後に、弾性体14を機械的な方法等で剥がし取り、さらに粘着した残滓を有機溶剤等を用いて除去し、図4の(d)の状態となる。
あるいは、弾性体14を除去せずに、太陽電池の裏面保護シートとして用いることもできる。この場合は熱処理により粘着性が出る材質の弾性体14(エラストマ)を用い、基板17と接着するようにする。
Finally, the elastic body 14 is peeled off by a mechanical method or the like, and the adhered residue is removed using an organic solvent or the like, resulting in a state shown in FIG.
Or it can also use as a back surface protection sheet of a solar cell, without removing the elastic body 14. FIG. In this case, an elastic body 14 (elastomer) made of a material that is tacky by heat treatment is used to adhere to the substrate 17.

また、上記の三層構造の基板は予め、球体セルの形状に沿って凹部を機械的に加工して形成しておけば、この凹部に球体セル載置して、加圧処理を行うことにより、同様の工程で本実施の形態の太陽電池を製造することができる。   In addition, if the above-described three-layer structure substrate is formed by mechanically processing the concave portion along the shape of the spherical cell in advance, the spherical cell is placed in the concave portion and subjected to pressure treatment. The solar cell of this embodiment can be manufactured in the same process.

上述の実施の形態において、第1導電型をp型、第2導電型をn型として、説明を行ったが、第1導電型をn型、第2導電型をp型としても同様に製造できるものである。
また、p型多結晶を球状基板とする球体セルを用いたが、p型単結晶またはp型アモルファスシリコンなどを用いても良い。
In the above-described embodiment, the first conductivity type is p-type and the second conductivity type is n-type. However, the first conductivity type is n-type and the second conductivity type is p-type. It can be done.
Moreover, although the spherical cell which uses p-type polycrystal as a spherical substrate was used, you may use p-type single crystal or p-type amorphous silicon.

本発明の実施形態に係る太陽電池の要部斜視図である。It is a principal part perspective view of the solar cell which concerns on embodiment of this invention. 本発明の実施形態に係る太陽電池を説明する断面概要図である。It is a section schematic diagram explaining a solar cell concerning an embodiment of the present invention. 本発明の実施形態に係る太陽電池を製造する際の球体セルの加工工程を説明する断面概要図である。It is a cross-sectional schematic diagram explaining the manufacturing process of the spherical cell at the time of manufacturing the solar cell which concerns on embodiment of this invention. 本発明の実施形態に係る太陽電池を製造する際に、加工した球体セルを基板に搭載し、太陽電池を形成する工程の概略断面図である。When manufacturing the solar cell which concerns on embodiment of this invention, it is a schematic sectional drawing of the process of mounting the processed spherical cell on a board | substrate and forming a solar cell. 本発明の実施形態に係る太陽電池の三層構造の基板の概略斜視図である。It is a schematic perspective view of the board | substrate of the three-layer structure of the solar cell which concerns on embodiment of this invention. 従来の太陽電池を説明する断面概要図である。It is a cross-sectional schematic diagram explaining the conventional solar cell.

符号の説明Explanation of symbols

10 球体セル
11 第1導電型(p型)半導体層
12 第2導電型(n型)半導体層
13 固定部材
14 弾性体
17 基板
17a 第1導電層
17b 絶縁層
17c 第2導電層
17d 凹部
DESCRIPTION OF SYMBOLS 10 Spherical cell 11 1st conductivity type (p-type) semiconductor layer 12 2nd conductivity type (n-type) semiconductor layer 13 Fixing member 14 Elastic body 17 Substrate 17a 1st conductive layer 17b Insulating layer 17c 2nd conductive layer 17d Recessed part

Claims (2)

第1導電層、絶縁層、最上層である第2導電層の三層構造からなる基板が、その表面に球体セルの形状に沿うように形成された凹部を具備し、
該凹部内に内部が第1導電型半導体層、表面が第2導電型半導体層からなる前記球体セルを有し、該球体セルの第1導電型半導体層が前記基板の第1導電層と電気的に接続されることにより内側電極が形成され、該球体セルの第2導電型半導体層が前記基板の第2導電層と電気的に接続されることにより外側電極が形成され、
前記凹部は、前記球体セルの表面の曲率よりも緩やかな曲率の凹面を具備する凹部とすることにより、前記凹面と前記球体セル表面との間に隙間を有することを特徴とする太陽電池。
A substrate having a three-layer structure of a first conductive layer, an insulating layer, and a second conductive layer, which is the uppermost layer, has a recess formed on the surface so as to follow the shape of the spherical cell,
In the recess, there is provided the spherical cell having a first conductive type semiconductor layer inside and a second conductive type semiconductor layer on the surface, and the first conductive type semiconductor layer of the spherical cell is electrically connected to the first conductive layer of the substrate. The inner electrode is formed by being connected electrically, and the second conductive semiconductor layer of the spherical cell is electrically connected to the second conductive layer of the substrate to form the outer electrode,
The said recessed part is a recessed part which comprises the concave surface of curvature gentler than the curvature of the surface of the said spherical cell, and has a clearance gap between the said concave surface and the said spherical cell surface, The solar cell characterized by the above-mentioned.
請求項1に記載の太陽電池において、前記基板の下に弾性体を有することを特徴とする太陽電池。
The solar cell according to claim 1, further comprising an elastic body under the substrate.
JP2007009960A 2007-01-19 2007-01-19 Solar cell Expired - Fee Related JP4372793B2 (en)

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