JP4349058B2 - Manufacturing method of radiation image detection apparatus - Google Patents

Description

The present invention relates to a method of manufacturing a radiological image detector.

  As a method for obtaining a radiographic image, a method called a screen film system (hereinafter also referred to as an SF system) that forms an analog image using a fluorescent intensifying screen and a radiographic film has been mainly used. In the SF system, radiation such as X-rays transmitted through a subject is incident on a fluorescent intensifying screen, and the phosphor in the fluorescent intensifying screen absorbs radiation energy to emit fluorescence, and the radiographic film is exposed to the emitted light. In this way, a radiographic image is formed.

  Recently, image data communication using these communication systems has been made in various fields due to the development of LAN, WAN, etc., and radiographic images can be converted into digital signals even in fields using radiographic images such as medical fields. Remote communication and the like are performed through image communication.

  By the way, in the case of performing image communication with a radiographic image produced by the SF system, image communication cannot be performed unless an analog image is converted into a digital signal. In addition, in the SF system, a good latent image cannot be formed unless the sensitivity of the photographic film and the sensitivity of the fluorescent intensifying screen are matched, and a radiographic image cannot be obtained unless the photographic film is developed. Further, it is necessary to consider the disposal of the used developing processing solution, and it takes time and effort to maintain good image formation.

  In recent years, digital radiographic image detection apparatuses represented by computed radiography (CR), flat panel type radiation detectors (FPD) and the like have appeared. In these, since a digital radiographic image is directly obtained and an image can be directly displayed on an image display device such as a cathode tube or a liquid crystal panel, image formation on a photographic film is not necessarily required. As a result, these digital X-ray image detection devices reduce the need for image formation by the silver halide photography method, and greatly improve the convenience of diagnosis work in hospitals and clinics.

  In such a digital radiological image detection apparatus, techniques for accurately reproducing incident radiation are studied, for example, a function of emitting fluorescence by receiving incident radiation, a function of converting light energy by light emission into charges, and In order to efficiently perform the functions of accumulating and discharging the generated charges, a radiation image detection apparatus having a laminated structure in which regions that express these functions are separated is proposed. (For example, refer to Patent Document 1).

  By the way, the digital radiological image detection apparatus is composed of a fluorescent material that two-dimensionally arranges photodetection elements functioning as pixels on a substrate as shown in FIG. 2, and supplies light to these pixels. It has a very complicated structure in which detection elements are regularly arranged. In addition, a radiation detection device having a pixel size of 200 μm or less, which has a photodetection element capable of forming a higher sensitivity and sharper radiation image, has appeared. For the production of highly complicated radiation detection devices, A high level of skill is required.

  At the same time, it is also required to prevent a decrease in yield due to the occurrence of defective products during manufacturing. In a method for manufacturing a radiological image detection apparatus, a transistor unit, a capacitor unit, and a light detection element are provided on a substrate, and then a scintillator unit having a phosphor is formed thereon (for example, Patent Documents 1 and 2). reference). In the techniques disclosed in these documents, the scintillator part is to be formed in the final process, and if a failure occurs while the scintillator part is being formed, it is possible to ruin the arranged parts such as transistors. is there. This is because a failure is likely to occur because the scintillator portion is formed on a diaphragm having poor smoothness, and the failure that occurs when the scintillator portion is formed has been a major factor that hinders yield reduction.

In order to prevent such a decrease in yield, for example, a phosphor layer is screen-printed so as to correspond to each of the photodetector elements having a plurality of photodetector elements arranged as pixels, and the phosphor layers are separated for each pixel. There is a manufacturing method of a radiation detecting device formed by the method (for example, see Patent Document 3). In this method, the phosphor layer is screen-printed so as to correspond to each photodetecting element constituting the radiation detection apparatus, and a device having a transistor part and a capacitor part is bonded to produce the apparatus. It is expected that even if a formation failure occurs, it becomes possible to prevent the use of parts such as a transistor and a capacitor, thereby preventing a decrease in yield.
Japanese Patent Laying-Open No. 2003-50280 (see paragraph 0010 and FIG. 4) Japanese Patent Laying-Open No. 2003-57353 (see paragraph 0011 and FIG. 4) JP 2002-303694 A (see paragraphs 0012 to 0013)

  However, in the method of forming the phosphor layer so as to correspond to the light detection element disclosed in Patent Document 3, the scintillator portion is formed so as to match the shape of the light detection element of 200 μm level. However, it was difficult to maintain the work efficiency by complicating the manufacturing process due to the requirement for very high skill.

  As described above, in the manufacturing technology of the digital radiological image detection apparatus, it is important to achieve both the prevention of the yield reduction due to the failure occurring when forming the scintillator portion containing the phosphor and the simplification of the manufacturing process. It was an issue.

The present invention has been made in view of the above problems, to prevent the reduction in yield formation by failure of the scintillator unit in the manufacturing process, and the radiation image detection equipment to achieve an improvement in work efficiency and simplify the manufacturing process An object is to provide a manufacturing method.

  The present inventor recalled a radiological image detection apparatus having a new structure in which a substrate is disposed between a scintillator section and a photoelectric conversion section after extensive studies to solve the above problems. Then, at the end of the experiment, it was found that good radiation image detection performance was exhibited in a radiation image detection apparatus having a structure in which a substrate was disposed between a scintillator section and a photoelectric conversion section. Thus, in the present invention, it has been found that even a device having a structure in which the scintillator portion is disposed on the substrate opposite to the side on which the photoelectric conversion portion, the capacitor portion, the transistor portion, etc. are disposed exhibits good radiation image detection performance. It was.

  That is, the present invention is achieved by any one of the following configurations.

  The inventor has also studied a method for manufacturing a radiological image detection apparatus, and has found a manufacturing method for manufacturing a radiographic image detection apparatus by bonding substrates together. That is, the present inventors have found a method of manufacturing a radiation image detection apparatus by providing a scintillator portion on a substrate different from a substrate on which components such as a photoelectric conversion portion are provided and bonding them together.

[1] A method for manufacturing a radiation image detection apparatus in which a scintillator that emits light having different intensities according to the intensity of incident radiation, and a photoelectric converter that photoelectrically converts light generated in the scintillator are arranged on a substrate. The scintillator unit and the photoelectric conversion unit are arranged on different substrates, respectively, and the substrate surface of the substrate provided with the scintillator unit and the substrate surface of the substrate provided with the photoelectric conversion unit are bonded to each other. A method for manufacturing a detection device.

[2] The method for manufacturing a radiographic image detection apparatus according to [1] , wherein the scintillator portion is formed on the entire surface of the substrate.

In the present invention, a substrate provided with a scintillator portion and a substrate provided with components such as a photoelectric conversion portion are bonded together, so that the pixel alignment is required to perform the bonding in units of pixels, which is dramatically higher than the conventional technology. Improved work efficiency. In particular, in the configuration [2] , it is possible to form a scintillator portion on the entire surface of the substrate, making the bonding operation easier.

  In addition, it is possible to manufacture a device with only a scintillator unit that does not have a failure, and the occurrence of a failure in the scintillator unit eliminates the possibility of ruining parts such as the photoelectric conversion unit and the transistor unit, thereby increasing the device yield. .

[3] The method for manufacturing a radiation image detecting apparatus according to [1] or [2] , wherein the substrate is a resin film having a visible light transmittance of 80% or more.

  Note that the conventional technology does not conceive the technical idea of the present invention in which a substrate is provided between a scintillator unit that emits fluorescence from incident radiation and a photoelectric conversion unit that efficiently photoelectrically converts light from the scintillator unit. It is done. This is because the radiation image detection device in the prior art always has a structure in which the scintillator unit and the photoelectric conversion unit are adjacent to each other. In fact, any of the devices disclosed in the above-mentioned patent documents includes a scintillator unit and a photoelectric conversion unit. Are directly adjacent to each other. As described above, in the prior art, in order to accurately reproduce the incident radiation as a radiation image, the light emission from the scintillator unit is reliably transmitted to the photoelectric conversion unit to perform efficient photoelectric conversion. The idea of disposing the substrate between the scintillator section and the photoelectric conversion section is presumed to have been unthinkable because no obstacle has been placed to reduce the visible photoelectric conversion efficiency.

The present invention has found that even with a structure in which a substrate is disposed between a scintillator section and a photoelectric conversion section, light emitted from the scintillator section can be reliably transmitted to the photoelectric conversion section, and highly accurate radiation image formation can be performed. As described above, the present invention provides a good photoelectric effect even if a substrate is placed between a scintillator unit that emits fluorescence according to the intensity of incident radiation and a photoelectric conversion unit that photoelectrically converts light obtained by the scintillator unit. It is an invention that makes it possible to find a manufacturing method of a radiological image detection apparatus that can perform conversion and obtain a radiological image detection apparatus that can detect a radiological image satisfactorily.

  In this invention, it discovered that a scintillator part could be formed in the board | substrate surface on the opposite side to the side in which components, such as a photoelectric conversion part, are provided. Further, by directly forming the scintillator portion on the substrate having high smoothness, the formation failure of the scintillator portion is eliminated, and at the same time, the problem of yield reduction due to the formation failure of the scintillator portion is solved.

  Further, in the present invention, since the substrate provided with the solid scintillator portion and the substrate provided with components such as the photoelectric conversion portion and the transistor portion are bonded together, the scintillator is adapted to correspond to the light detection element and the transistor component. Production efficiency has been improved by eliminating the need to attach the parts in small pixel units. In addition, it is possible to manufacture a device that combines a non-defective scintillator portion, a photodetecting element, and a transistor, thereby achieving an improvement in the yield of components during manufacturing.

  Hereinafter, the present invention will be described in detail.

The present invention comprises a scintillator unit that emits light according to the intensity of incident radiation and a photoelectric conversion unit that photoelectrically converts light generated in the scintillator unit on a substrate. The scintillator unit and the photoelectric conversion unit Are arranged on different substrates , respectively, and relates to a method for manufacturing a radiation image detection apparatus having a structure in which the substrate surfaces of a substrate provided with a scintillator portion and a substrate provided with a photoelectric conversion portion are bonded together .

First, an example of a diagnostic system using a radiological image detection apparatus manufactured by the method for manufacturing a radiological image detection apparatus according to the present invention will be described with reference to FIG.

As shown in FIG. 1, the radiation image detection apparatus 20 manufactured by the method for manufacturing a radiation image detection apparatus according to the present invention irradiates a subject 15 with radiation generated by the radiation generator 10. Is detected, and radiation information is converted into a digital image signal. As the radiation used in the present invention, for example, X-rays having a wavelength of about 1 × 10 ⁻¹⁰ m are used. The radiation generator 10 generally has an X-ray tube having a fixed anode or a rotating anode, and generates X-rays by applying a load voltage of 10 kV to 300 kV, preferably 20 kV to 150 kV, to the anode of the X-ray tube.

  The image signal converted by the radiation image detection device 20 is supplied from the radiation image detection device 20 to the image processing unit 51. The image processing unit 51 performs processing such as shading correction, gain correction, gradation correction, edge enhancement processing, and dynamic range compression processing on the digital image signal supplied from the radiation image detection apparatus 20 to diagnose the image signal. Convert to a suitable image signal. In addition, the image processing unit 51 can connect the image display unit 52 and display an image signal during image processing by the image processing unit 51 or an image signal for which image processing has been completed on the image display unit 52. .

  The image processing unit 51 is connected to an information input unit 53 configured by a keyboard, a mouse, and the like, and information can be input to the subject 15 via the information input unit 53 to add information to the image signal. Is possible. Also, designation of image processing, storage and reading of image signals, instruction to transmit / receive image signals via the network, and the like are performed via the information input unit 53.

  The image processing unit 51 includes an image output unit 54 that outputs a radiation image on an output medium via a network, an image storage unit 55 that stores the radiation image in the state of an image signal, and an analysis by a computer on the captured radiation image. Is connected to a computer-aided image automatic diagnosis unit (CAD) 56 that performs diagnosis support so that no lesion is overlooked.

  Specifically, the image output unit 54 includes a non-silver salt recording medium such as an ink jet printer, a melting or sublimation thermal printer, a laser printer, or a silver salt photographic film.

Moreover, the image signal of the radiographic image obtained by the radiographic image detection apparatus 20 manufactured by the manufacturing method of the radiographic image detection apparatus according to the present invention is transmitted through the network 60 such as LAN, WAN, Internet, and PACS (medical image network). It can also be sent to other departments in the hospital facility or to remote locations.

Next, the structure of the radiation image detection apparatus manufactured by the method for manufacturing a radiation image detection apparatus according to the present invention will be described. FIG. 2 is a specific external view of the radiation image detection device 20 manufactured by the method for manufacturing a radiation image detection device according to the present invention. The radiation image detection apparatus 20 receives the irradiated radiation and converts the radiation information into a digital image signal, the imaging panel 21, the control circuit 30 that controls the operation of the radiation image detection apparatus 20, and the image signal converted by the imaging panel 21. An image signal from the image pickup panel 21, an operation unit 32 for switching the operation of the radiographic image detection device 20, a display unit 33 for displaying radiographic image preparation completion and writing of an image signal to the memory unit 31. A power supply unit 34 that supplies power necessary to obtain the data, a communication connector 35 for performing communication between the radiation image detection apparatus 20 and the image processing unit 51, and a housing 40 that stores these connectors. Is done.

  The imaging panel 21 includes a scanning drive circuit 25 that reads the stored electrical energy according to the intensity of the irradiated radiation, and a signal selection circuit 27 that outputs the stored electrical energy as an image signal. Note that the inside of the housing 40, the scanning drive circuit 25, the signal selection circuit 27, the control circuit 30, the memory unit 31 and the like are covered with a radiation shielding member (not shown), and radiation scattering inside the housing 40, Prevent radiation to each circuit.

  The housing 40 is made of a lightweight and durable material such as aluminum or aluminum alloy. The radiation incident surface side of the housing 40 is formed of a material that easily transmits radiation, such as carbon fiber. Further, a radiation absorbing material such as a lead plate is provided on the back side opposite to the radiation incident surface, and is generated by radiation that has passed through the radiation image detection device 20 and radiation of a constituent material of the radiation image detection device 20 2. Prevent secondary radiation from leaking out of the device.

  The imaging panel 21 will be described in detail with reference to FIGS. The imaging panel 21 includes a scintillator unit 212 that emits fluorescence when irradiated with radiation, and a photoelectric conversion unit 213 that photoelectrically converts fluorescence generated in the scintillator unit 212 below the scintillator unit 212. As shown in FIG. 2, the photoelectric conversion units 213 are two-dimensionally arranged in a lattice shape, and one photoelectric conversion unit 213 corresponds to one pixel of the radiation image.

FIG. 3 is a partial cross-sectional view of the imaging panel 21 used in the radiological image detection apparatus manufactured by the manufacturing method of the radiological image detection apparatus according to the present invention. This is a pixel unit on the imaging panel 21 of FIG. 2 is a cross section corresponding to the photoelectric conversion unit 213 arranged two-dimensionally. As shown in FIG. 3, the imaging panel 21 includes a scintillator unit 212 on a substrate 211, and a photoelectric conversion unit 213 that performs photoelectric conversion on a substrate 211 opposite to the side on which the scintillator unit 212 is disposed. In addition, it has a laminated structure in which various functions are separated so that favorable photoelectric conversion can be performed.

  FIG. 3A shows an imaging panel in which a scintillator portion 212 is provided on one surface of a single substrate 211, and a photoelectric conversion portion 213, a capacitor portion 221, a transistor portion 222, etc. are arranged on the opposite substrate surface. 21 is produced. As shown in FIG. 3A, the scintillator portion 212 is provided on one side of the same substrate and the photoelectric conversion portion 213 and the transistor portion 222 are provided on the other side. The scintillator is provided after components such as the photoelectric conversion portion 213 are provided. It is preferable to form the portion 212.

  FIG. 3B is a cross-sectional view of the imaging panel 21 in which two substrates 211 are bonded to each other. A scintillator unit 212 is provided on the substrate 211a side, a photoelectric conversion unit 213, a capacitor is provided on the other substrate 211b side. The imaging panel 21 is manufactured by arranging the part 221 and the transistor part 222 and bonding the substrate 211a and the substrate 212b together.

  In this manner, the scintillator unit 212 is provided on the substrate 211a side, and the photoelectric conversion unit 213, the capacitor unit 221, and the transistor unit 222 are provided on the other substrate 211b side. Parts are no longer wasted due to poor formation of the scintillator section 212. In addition, since the scintillator portion 212 is formed over the entire surface of the substrate, bonding in units of pixels is not necessary, so that work efficiency can be improved and yield can be increased.

  In addition, the transistor part 222 and the like are not ruined due to poor formation of the scintillator part 212, and the scintillator part 212 is formed as a solid over the entire surface of one side of the substrate, thereby eliminating the need for bonding work in units of pixels. Therefore, it is possible to improve work efficiency and improve yield.

  As shown in FIG. 3, the scintillator unit 212 is provided on the radiation irradiation surface side, and emits fluorescence according to the intensity of the incident radiation. The scintillator unit 212 is mainly composed of a phosphor, and outputs electromagnetic waves (light) corresponding to infrared light from ultraviolet light centered on visible light having a wavelength of 300 nm to 800 nm based on incident radiation.

  The photoelectric conversion unit 213 is disposed via the substrate 211 from the scintillator unit 212 side, and converts light (electromagnetic waves) output from the scintillator unit 212 into electric charges. As shown in FIG. 3, the photoelectric conversion unit 213 has a laminated structure in which functions are separated for smooth photoelectric conversion, and has a transparent electrode film 213 a, a hole conduction layer 213 b, a charge generation layer 213 c, an electron from the substrate 211 side. A conductive layer 213d and a conductive layer 213e are included. Among these, it is the charge generation layer 213 c that actually performs photoelectric conversion, and electrons and holes are generated by light (electromagnetic waves) output from the scintillator unit 212.

  In addition, a capacitor 221 that accumulates charges generated by the photoelectric conversion unit 213 in units of pixels is disposed on the surface of the photoelectric conversion unit 213 opposite to the contact surface with the substrate 211. The capacitor 221 includes a pixel electrode 221a, a capacitor electrode 221b, and an insulating film 221c, and accumulates electric charge obtained by photoelectric conversion between the two electrodes. Further, a transistor 222 which is a switching element that performs signal output using charges stored in the capacitor 221 is disposed over the substrate 211 on the same side as the photoelectric conversion unit 213 and the capacitor 221.

  Further, a protective layer 215 is provided over the capacitor 221 and the transistor 222, and the photoelectric conversion unit 213, the capacitor 221, the transistor 222, and the like on the substrate 211 are shielded from the outside air to prevent the influence of moisture, and dust and dirt. Etc. are prevented.

  In addition, the imaging panel 21 performs fluorescence emission according to the intensity of the radiation irradiated by the scintillator unit 212, drives the switching element using charges obtained by photoelectric conversion of the fluorescence generated by the photoelectric conversion unit 213, Signal output is performed by driving, and conversion of a radiation image into an electric signal will be described later.

  The present invention is characterized by having a structure in which a substrate 211 is disposed between a scintillator portion 212 and a photoelectric conversion portion 213.

  In the present invention, even if the substrate 211 is provided between the scintillator unit 212 and the photoelectric conversion unit 213, the photoelectric conversion unit 213 can photoelectrically convert light emitted from the scintillator unit 212 with high accuracy by controlling the characteristics of the substrate 211. I found out. That is, it has been found that good photoelectric conversion can be performed with a structure in which the substrate 211 is disposed between the scintillator unit 211 and the photoelectric conversion unit 213 by paying attention to the thickness of the substrate 211 and the aperture ratio per pixel. Further, among the characteristics of the substrate 211, the visible light transmittance has an influence on the photoelectric conversion. Specifically, by using a material having a visible light transmittance of 80% or more for the substrate 211, effective photoelectric conversion can be performed. I found out what I can do. Specifically, those having a visible light transmittance of 80% to 95% are preferable, and examples thereof include organic materials and inorganic materials such as resin films, glasses, ceramics, etc. Among them, resin films have high visible light transmittance. And having flexibility.

  Specific resin films include, for example, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), polyetherimide, polyetheretherketone, polyphenylene sulfide, polyarylate, polyimide, polycarbonate ( PC), cellulose triacetate (TAC), cellulose acetate propionate (CAP) and the like.

  Further, the resin film can be reduced in weight as compared with the case of a glass substrate, and is also preferable from the viewpoint of improving durability against impact.

  In addition, a substrate obtained by adding a plasticizer such as trioctyl phosphate or dibutyl phthalate or an ultraviolet absorber such as benzotriazole or benzophenone to the resin film described above is also used. Also preferred is a resin film prepared by applying an organic-inorganic polymer hybrid method in which an inorganic polymer raw material such as tetraethoxysilane is added to the resin film raw material and the molecular weight is increased by the action of a chemical catalyst, heat, light, or the like. .

  In the present invention, as described above, the inventors have studied that the effects of the present invention can be found by paying attention to the thickness of the substrate 211 and the aperture ratio per pixel. Specifically, when the thickness of the substrate is 10 to 200 μm, preferably 50 to 100 μm, and the aperture ratio per pixel is 60% or more, more preferably 80% or more, the scintillator unit 212 and the photoelectric conversion unit 213 It has been found that a device having a structure with a substrate in between can perform good photoelectric conversion.

Next, the scintillator unit 212 constituting the radiological image detection apparatus manufactured by the radiological image detection apparatus manufacturing method according to the present invention will be described in detail.

  The scintillator unit 212 is mainly composed of a phosphor, and outputs electromagnetic waves (light) corresponding to infrared light from ultraviolet light centered on visible light having a wavelength of 300 nm to 800 nm based on incident radiation. To do. As shown in FIG. 3, the scintillator unit 212 includes a scintillator protection layer 212b that protects the scintillator layer 212b that actually outputs visible light to the outermost part.

  If the phosphor used in the scintillator unit 212 in the present invention is a phosphor that outputs electromagnetic waves in the sensitivity region of the light receiving element constituting the photoelectric conversion unit 213 such as the visible, ultraviolet, or infrared region by irradiation with radiation, It is not particularly limited.

Examples of the phosphor used in the scintillator unit 212 include tungstate phosphors such as CaWO ₄ , CaWO ₄ : Pb, MgWO, Y ₂ O ₂ S: Tb, Gd ₂ O ₂ S: Tb, La _2. Terbium-activated rare earth oxysulfide phosphors such as O ₂ S: Tb, (Y, Gd) ₂ O ₂ S: Tb, (Y, Gd) ₂ O ₂ S: Tb, Tm, YPO ₄ : Tb, GdPO ₄ : Tb, LaPO ₄ : Terbium activated rare earth phosphate phosphor such as Tb, LaOBr: Tb, LaOBr: Tb, Tm, LaOCl: Tb, LaOCl: Tb, Tm, GdOBr: Tb, GdOBr: Tb, Tm, GdOCl: Terbium activated rare earth oxyhalide phosphors such as Tb, GdOCl: Tb, Tm, thulium activated rare earth oxyhas such as LaOBr: Tm, LaOCl: Tm Genide-based phosphors, gadolinium-activated rare earth oxyhalide-based phosphors such as LaOBr: Gd and LuOCl: Gd, GdOBr: Ce, GdOCl: Ce, (Gd, Y) OBr: Ce, (Gd, Y) OCl: Ce Cerium-activated rare earth oxyhalide phosphors such as BaSO ₄ : Pb, BaSO ₄ : Eu ²⁺ , (Ba, Sr) SO 4: Eu ²⁺ and other barium sulfate phosphors, Ba ₃ (PO ₄ ) ₂ : Divalent europium activated alkaline earth metals such as Eu ²⁺ , (Ba ₂ PO ₄ ) ₂ : Eu ²⁺ , Sr ₃ (PO ₄ ) ₂ : Eu ²⁺ , (Sr ₂ PO ₄ ) ₂ : Eu ²⁺ Phosphate phosphor, BaFCl: Eu ²⁺ , BaFBr: Eu ²⁺ , BaFCl: Eu ²⁺ , Tb, BaFCl: Eu ²⁺ , Tb, BaF ₂ .BaCl ₂ .KCl: Eu ²⁺ , (Ba, Mg ) F ₂ · aCl ₂ · KCl: Eu ²⁺ ₂ divalent europium activated alkaline earth metal fluoride halide phosphors, such as, CsI: Na, CsI: Tl , NaI, KI: iodide phosphor such as Tl, ZnS: Ag, (Zn, Cd) S: Ag, (Zn, Cd) S: Cu, (Zn, Cd) S: Cu, Ag, and other sulfide-based phosphors, HfP ₂ O ₇ , HfP ₂ O ₇ : Cu, Hafnium phosphate phosphors such as Hf ₃ (PO ₄ ) ₄ , YTaO ₄ , YTaO ₄ : Tm, YTaO ₄ : Nb, (Y, Sr) TaO ₄ : Nb, LuTaO ₄ , LuTaO ₄ : Tm, LuTaO ₄ : Nb Tantalate phosphors such as (Lu, Sr) TaO ₄ : Nb, GdTaO ₄ : Tm, Mg ₄ Ta ₂ O ₉ : Nb, Gd ₂ O ₃ .Ta ₂ O ₅ .B ₂ O ₃ : Tb, In addition, Gd ₂ O ₂ S: Eu ³⁺ , (La, Gd, Lu) ₂ Si ₂ O ₇ : Eu, ZnSiO ₄ : Mn, Sr ₂ P ₂ O ₇ : Eu, and the like.

In the present invention, cesium iodide (CsI: Tl) or gadolinium oxysulfide (Gd ₂ O ₂ S: Tb) having high X-ray absorption and luminous efficiency is preferably used, and noise is reduced by using these. A high-quality radiation image can be obtained.

  Further, cesium iodide (CsI: Tl) can form a scintillator portion having a columnar crystal structure. The columnar crystal structure has an effect of reducing a phenomenon called light guide effect in which light emission leaks outside from the crystal side face of the phosphor, and has a property that sharpness is not easily lowered.

  The diameter of the phosphor particles used in the present invention is 7 μm or less, preferably 4 μm or less. As the diameter of the phosphor particles is smaller, scattering of light at the scintillator portion is prevented and high sharpness is obtained.

  The scintillator unit 212 is formed by dispersing phosphors in the following binder resin. By dispersing and including the phosphor in the binder resin, the effect of improving the granularity of the radiation image is exhibited.

  The binder resin used in the scintillator section 212 is to improve the dispersibility of the phosphor and improve the granularity of the radiation image by increasing the filling rate of the phosphor. Specifically, polyurethane, vinyl chloride Copolymer, vinyl chloride-acrylonitrile copolymer, butadiene-acrylonitrile copolymer, polyamide resin, polyvinyl butyral, cellulose derivative, styrene-butadiene copolymer, various synthetic rubber resins, phenol resin, epoxy resin, urea resin, Examples include melanin resin, phenoxy resin, silicon resin, acrylic resin, urea formamide resin, and the like. Among these, polyurethane, polyester, vinyl chloride copolymer, polyvinyl butyral, and nitrocellulose are preferably used.

  The mass content of the phosphor dispersed in the binder is preferably 90 to 99%. Further, the thickness of the scintillator unit 212 is determined from the balance between the granularity and sharpness of the radiation image. That is, when the scintillator portion 212 is thick, the graininess is improved, but sharpness tends to be lowered. When the scintillator portion 212 is thinned, the sharpness is improved, but the graininess tends to be lowered. In the scintillator section 212 used in the present invention, it is confirmed that the thickness is 20 μm to 1 mm, preferably 50 μm to 300 μm, as a thickness capable of expressing both the granularity and the sharpness in a balanced manner. Yes.

  In addition, since the fluorescent substance used by this invention has hygroscopicity except for a part, it is preferable to seal so that it may not receive to the influence of humidity. As a phosphor sealing technique, for example, the methods disclosed in JP-A-11-223890, JP-A-11-249243, JP-A-11-344598, JP-A-2000-171597, and the like are employed. As a result, the entire imaging panel 21 can be sealed.

Next, the photoelectric conversion unit 213 constituting the radiological image detection apparatus manufactured by the radiological image detection apparatus manufacturing method according to the present invention will be described in detail.

  As described above, the photoelectric conversion unit 213 converts light (electromagnetic waves) output from the scintillator unit 212 into electric charges, and is arranged on the surface side opposite to the radiation irradiation surface side of the scintillator unit 212. As described above, the present invention is characterized in that the substrate 211 is disposed on the surface opposite to the side on which the scintillator portion 212 is disposed.

  Further, the photoelectric conversion unit 213 has a laminated structure composed of a plurality of functionally separated layers in order to perform smooth photoelectric conversion. As shown in FIG. 3, the transparent electrode film 213a is formed from the substrate 211 side. , A hole conduction layer 213b, a charge generation layer 213c, an electron conduction layer 213d, and a conductive layer 213e.

  The charge generation layer 213c contains an organic compound having a property of photoelectrically converting electromagnetic waves (light), and generates electrons and holes in the organic compound by the electromagnetic waves (light) output from the scintillator unit 212. Perform photoelectric conversion.

The transparent electrode film 213a is formed using a conductive transparent material such as indium tin oxide (ITO), SnO ₂ , or ZnO. Examples of the method for forming the transparent electrode film 213a include a thin film forming method such as a vapor deposition method and a sputtering method, and a method for forming a desired shape pattern by a photolithography method. In the case where high pattern accuracy is not necessarily required (about 100 μm or more), there is a method of forming a pattern through a mask having a desired shape when the electrode material is deposited or sputtered.

  In the present invention, the transmittance of the transparent electrode film 213a is desirably larger than 10%, and the sheet resistance is preferably several hundred Ω / □ or less. Furthermore, although the film thickness depends on the material, it is usually 10 nm to 1 μm, preferably 10 nm to 200 nm. In this range of film thickness, the electrodes are separated into islands, or the transparent film is formed by increasing the film thickness. It doesn't take more time than necessary.

  In the charge generation layer 213 c, electrons and holes are generated by receiving electromagnetic waves (light) generated in the scintillator unit 212. The holes generated in the charge generation layer 213c are collected in the hole conduction layer 213b, and the electrons are collected in the electron conduction layer 213d. In the present invention, the hole conduction layer 213b and the electron conduction layer 213d are not necessarily essential.

The conductive layer 213e is generated using, for example, an electrode material such as chromium. The electrode material can be selected from a general metal electrode or the above-mentioned transparent electrode, but in order to obtain good characteristics, a metal, an alloy, an electrically conductive compound having a small work function (4.5 eV or less), and these It is preferable to use a mixture of Examples of such electrode materials include sodium, sodium-potassium alloy, magnesium, lithium, aluminum, magnesium / copper mixture, magnesium / silver mixture, magnesium / aluminum mixture, magnesium / indium mixture, aluminum / aluminum oxide (Al ₂ O ₃ ) mixtures, indium, lithium / aluminum mixtures, all rare earths and the like.

  The conductive layer 213e is formed using these electrode materials as raw materials by a method such as vapor deposition or sputtering. The sheet resistance of the conductive layer 213e is preferably several hundred Ω / □ or less, and the film thickness is 10 nm to 1 μm, preferably 50 nm to 500 nm. When the thickness is within the above range, the conductive portion does not become an island shape because it is too thin, and it does not take time to form the conductive portion by increasing the film thickness.

  Further, the hole conduction layer 213b, the charge generation layer 213c, and the electron conduction layer 213d will be described in detail. As a material capable of photoelectric conversion used in the charge generation layer 213c, a conductive polymer material (such as a π-conjugated polymer material or a silicon polymer material), a light emitting material used for a low molecular organic EL element, or the like. Is mentioned. Further, the charge generation layer 213c can adopt the structure of an organic EL element, and the organic EL element can be either a low molecular material or a high molecular weight material called a light emitting polymer. But you can.

  Examples of the conductive polymer material include poly (2-methoxy, 5- (2′ethylhexyloxy) -p-phenylene vinylene), poly (3-alkylthiophene), and the like, “organic EL material and Display ”(CMC Co., Ltd. (issued on February 28, 2001)), the compounds described on pages 190 to 203,“ Organic EL devices and the forefront of industrialization ”(NTS And the compounds described on pages 81 to 99 of the company (issued on Nov. 30, 1998).

  In addition, as a light emitting material used for a low molecular weight organic EL element, page 36 of the above-mentioned "Organic EL element and its forefront of industrialization" (NTS Corporation (issued on November 30, 1998)). To the compound described on page 56, and the compound described on page 148 to page 172 of the above-mentioned "organic EL material and display" (CMC Co., Ltd. (issued on February 28, 2001)). Is mentioned.

  In the present invention, a conductive polymer compound is particularly preferable as the organic compound capable of photoelectric conversion, and a π-conjugated polymer compound is most preferable. Specific examples 10 to 41 of the basic skeletons 1 to 9 of the conductive polymer compound and the π-conjugated polymer compound are shown below.

  Specific examples 42 to 51 of conductive polymer compounds other than the π-conjugated system are shown below.

  In addition, as a photoelectrically convertible material used in the photoelectric conversion unit 213 in the present invention, the above-described conductive polymer compound and the low-molecular organic EL element are not limited to those described above.

  Further, in the present invention, 60 or more carbon atoms called fullerene are bonded to the hole conduction layer 213b, the charge generation layer 213c, and the electron conduction layer 213d using a π-conjugated polymer compound in the photoelectric conversion portion 213 to form a spherical or A carbon compound having a tubular three-dimensional network structure may be added. It is expected that carrier transfer and carrier trap between π-conjugated polymer compounds are promoted by the action of the three-dimensional π electron cloud of the carbon compound having such a three-dimensional structure.

  Specific examples of fullerene are, for example, a spherical molecule such as a soccer ball with a diameter of about 0.7 nm supplied by Mitsubishi Corporation under the name C60, a tube shape called carbon nanotube, and a bucky onion. A molecule having a structure in which carbon atoms are concentrically arranged and a molecule having a three-dimensional structure having a stable structure close to a sphere formed with less than 60 carbon atoms, called a bucky baby.

  For the specific three-dimensional structure and product of fullerene, it is preferable to refer to the description on the website (www.mcfullrerene.com) of Mitsubishi Corporation.

  Specific examples of such a compound having a three-dimensional net structure composed of carbon atoms include fullerene C-70, fullerene C-76, fullerene C-78, fullerene in addition to the aforementioned C60 (fullerene C-60). C-84, fullerene C-240, fullerene C-540, mixed fullerene, fullerene nanotube, multi-walled nanotube (Multi Walled Nanotube), single-walled nanotube (Single Walled Nanotube), and the like. In addition, these fullerenes may have a substituent introduced in order to impart compatibility with a solvent.

  In the present invention, in order to improve photoelectric conversion efficiency and carrier delivery efficiency to the electrode, an additive is added to the charge generation layer 213c, or a region containing the additive is provided as a region separate from the charge generation unit, It may be formed as a hole conduction layer 213b or an electron conduction layer 213d.

  As these additives, hole injection materials, hole transport materials, electron transport materials, electron injection materials, and the like used in organic EL elements can be applied. Specifically, triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives and pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, Hydrazone derivatives, stilbene derivatives, silazane derivatives, aniline copolymers, and conductive polymer oligomers, especially thiophene oligomers, porphyrin compounds, aromatic tertiary amine compounds and styrylamine compounds, nitro-substituted fluorene derivatives, diphenylquinone derivatives , Thiopyran dioxide derivatives, heterocyclic tetracarboxylic anhydrides such as naphthaleneperylene, carbodiimides, fluorenylidenemethane derivatives, Laquinodimethane and anthrone derivatives, oxadiazole derivatives, thiadiazole derivatives, quinoxaline derivatives, metal complexes of 8-quinolinol derivatives (eg, tris (8-quinolinolato) aluminum (Alq3), tris (5,7-dichloro-8-quinolitolate) aluminum, Tris (5,7-dibromo-8-quinolylate) aluminum, tris (2-methyl-8-quinolylato) aluminum, tris (5-methyl-8-quinolylato) aluminum, bis (8-quinolylato) zinc (Znq2), etc.) And so on.

  Next, the capacitor 221 that accumulates the electric charge obtained by the photoelectric conversion unit 213 and the transistor 222 that is a switching element that performs signal output using the electric charge accumulated in the capacitor 221 are described.

  As shown in FIG. 2, the capacitor 221 stores the charge generated by the photoelectric conversion unit 213 for each pixel, and the transistor 222 performs signal output in units of pixels with the charge stored in the capacitor 221.

  As shown in FIG. 3, the capacitor 221 forms a compensation capacitor (capacitor) that compensates for the holding voltage of the pixel in the non-selection period by the structure in which the capacitor electrode 221 b is provided on the pixel electrode 221 a with the insulating film 221 c interposed therebetween.

  The pixel electrode 221a and the capacitor electrode 221b may be made of any material and shape as long as they function as a capacitor. For example, the pixel electrode 221a and the capacitor electrode 221b are different in size and shape. There may be. Typical examples of the electrode material include chromium, tantalum, aluminum, an organic conductive polymer, a metal complex, and the like, which may have a single layer structure or a laminated structure.

  As the insulating film 221c, a film formed with various organic compounds or inorganic oxides is used. Specifically, as the organic compound film, polyimide, polyamide, polyvinyl alcohol, polyvinyl phenol, polyester, polyacrylate, photo radical polymerization resin, photo cationic polymerization resin, copolymer containing acrylonitrile component, novolak resin And a coating of cyanoethyl pullulan.

  These organic compound insulation forming methods include spray coating, blade coating, spin coating, dip coating, casting, roll coating, bar coating, die coating, and other methods such as coating, printing, and inkjet. The method by patterning, such as a method, is mentioned, and it is used according to the material and physical properties.

  Inorganic oxide coatings include silicon oxide, aluminum oxide, tantalum oxide, titanium oxide, tin oxide, vanadium oxide, barium strontium titanate, barium zirconate titanate, lead zirconate titanate, lead lanthanum titanate, strontium titanate , Barium titanate, magnesium barium fluoride, bismuth titanate, bismuth strontium titanate, bismuth strontium tantalate, bismuth tantalate niobate, trioxycide yttrium, and the like. Among these, silicon oxide, aluminum oxide, tantalum oxide, and titanium oxide are preferable, and inorganic nitrides such as silicon nitride and aluminum nitride are also preferably used.

  These inorganic oxide insulating layer formation methods include vacuum deposition, molecular beam epitaxial growth, ion cluster beam, low energy ion beam, ion plating, CVD, sputtering, atmospheric pressure plasma, and other dry methods. Coating method by process, spray coating method, blade coating method, spin coating method, dip coating method, casting method, roll coating method, bar coating method, die coating method, and other coating methods, printing methods, inkjet methods, etc. The method by patterning is mentioned, It uses suitably according to material and a physical property.

  Next, the transistor 222 is used as a switching element, and a specific example is a thin film transistor called a TFT. The TFT may be either an inorganic semiconductor type or an organic semiconductor type, and a TFT formed on a plastic film is more preferable. As TFTs formed on plastic films, in addition to amorphous silicon-based TFTs, embossed micro CMOS (Nanoblocks) made of single crystal silicon called FSA (Fluidic Self Assembly) technology developed by Alien Technology, USA. And TFTs arranged on a plastic film provided with flexibility.

  Furthermore, Science 283, 822 (1999) and Appl. Phys. Examples include TFTs using organic semiconductors described in documents such as Lett771488 (1998) and Nature 403, 521 (2000).

  Among these TFTs, in the present invention, TFTs manufactured using the FSA technique and TFTs using organic semiconductors are preferable, and TFTs using organic semiconductors are particularly preferable. TFTs using organic semiconductors do not require equipment such as a vacuum evaporation system, as TFTs using silicon, and can be manufactured using printing and inkjet technologies, thereby reducing manufacturing costs. Is possible. In addition, since the processing temperature can be set low, it is possible to manufacture a TFT using a plastic substrate having a low softening point.

  In the TFT using an organic semiconductor, a field effect transistor (FET) is particularly preferable, and an organic TFT having the structure shown in FIGS. 5A to 5C is preferably used. The organic TFT shown in FIG. 5A is obtained by sequentially forming a gate electrode, a gate insulating layer, source / drain electrodes, and an organic semiconductor layer on a substrate. The organic TFT in (b) has a gate electrode, a gate insulating layer, an organic semiconductor layer, and source / drain electrodes formed on a substrate in this order. The organic TFT in (c) has a source / drain on an organic semiconductor single crystal. An electrode, a gate insulating layer, and a gate electrode are sequentially formed.

  The compound forming the organic semiconductor layer may be a single crystal material or an amorphous material, and may be a low molecule or a polymer, but particularly preferred are condensed aromatic carbonized carbons represented by pentacene, triphenylene, anthracene, etc. Examples thereof include a single crystal of a hydrogen compound and the π-conjugated polymer.

  The compound that forms the source / drain electrode and the gate electrode may be any of a metal compound, a conductive inorganic compound, and a conductive organic compound, but among these, the conductive organic compound is effective in that it is easy to process in producing the electrode. It is. Typical examples thereof include Lewis acids (iron chloride, aluminum chloride, antimony bromide, etc.), halogens (iodine, bromine, etc.), sulfonates (π Polystyrene sulfonic acid sodium salt (PSS), potassium p-toluene sulfonate, etc., and the like. Specifically, PEDOT, which is a π-conjugated polymer compound, is added to the aforementioned polystyrene sulfonic acid sodium salt ( Examples thereof include a conductive polymer doped with (PSS).

  Further, a primary battery such as a manganese battery, a nickel-cadmium battery, a mercury battery, or a lead battery or a rechargeable secondary battery is used on the opposite side of the capacitor 221 on the photoelectric conversion unit 213 side through an insulating film 215. A power supply unit 34 may be provided. As a form of this battery, a flat form is preferable so that the radiation image detecting apparatus can be thinned.

  A protective layer 215 is provided on the substrate 211 on the side where the photoelectric conversion unit 213, the capacitor 221, the transistor 222, and the like are disposed in order to protect these components from external environmental factors such as moisture and dust.

  For the protective layer 215, a polyester film, a polymethacrylate film, a cellulose acetate film, or the like is used. Among these, a polyester film that can be stretched and typified by a polyethylene terephthalate film or a polyethylene naphthalate film is preferable in terms of strength. Moreover, the vapor deposition film which vapor-deposited thin films, such as a metal oxide and a silicon nitride, on a polyethylene terephthalate film or a polyethylene naphthalate film is more preferable from a moisture-proof surface.

  The imaging panel 21 shown in FIG. 3B is obtained by bonding the substrate 211a and the substrate 211b. As a method for bonding the substrate, a method using thermocompression bonding, an adhesive, or an adhesive sheet is used. Although the method of using is mentioned, the method by thermocompression bonding is preferable from a viewpoint of visible light transmittance.

Next, digital signal conversion of a radiographic image performed by the radiographic image detection device 20 manufactured by the method for manufacturing a radiographic image detection device according to the present invention will be described. As described above, the radiation applied to the imaging panel 21 in FIG. 2 is converted from ultraviolet light centered on visible light having a wavelength of 300 nm to 800 nm into electromagnetic waves (light) corresponding to infrared light by the scintillator unit 212. When the converted light is converted into electric charge by the photoelectric conversion unit 213, the electric charge is accumulated in the capacitor 221. Then, the switching element is driven by the electric charge accumulated in the capacitor 221 and is output as a digital signal for each pixel by driving the switching element.

  The transistor 222 that is a switching element is connected to a pixel electrode 221 a that is one electrode of a capacitor 221 that accumulates electric charges converted by the photoelectric conversion unit 213. The transistor 222 is driven using the charge accumulated in the capacitor 221, and the radiation image is output as an electrical signal for each pixel by driving the transistor 222.

  As described above, the transistor 222 includes the gate electrode 222a, the source electrode (drain electrode) 222b, the drain electrode (source electrode) 222c, the organic semiconductor layer 222d, and the insulating layer 222e.

FIG. 4 is a schematic diagram showing a circuit configuration of the imaging panel 21 constituting the radiological image detection apparatus manufactured by the method for manufacturing a radiological image detection apparatus according to the present invention. The imaging panel 21 includes a plurality of photoelectric conversion units 213. It shows that it has a two-dimensionally arranged structure and photoelectrically converts a radiographic image pixel by pixel and outputs an electrical signal. Further, FIG. 4 shows that the pixel electrode 221a that constitutes one electrode of the capacitor 221 that accumulates the electric charge obtained by the photoelectric conversion unit 213 is two-dimensionally arranged. It is shown that the pixel electrode 221a is arranged so as to correspond to one pixel of the radiation image.

  Further, scanning lines and signal lines are arranged between the pixels, and in FIG. 4, they are arranged so as to be orthogonal to each other. Here, assuming that one section surrounded by scanning lines and signal lines is one pixel, the number of pixels of the imaging panel 21 is, for example, when m is arranged in one direction and n is arranged in the other direction. Is composed of m × n number of pixels. The imaging panel 21 includes capacitors 221- (1,1) to 221- (m, n) corresponding to the number of m × n pixels and transistors 222- (1,1) to (switching elements). m, n) are arranged, and between the pixels, the scanning lines 223-1 to 223-m and the signal lines 224-1 to 224-n are arranged so as to be orthogonal to each other.

For example, in the first pixel, a transistor 222- (1,1) which is a switching element formed of a silicon laminated structure or an organic semiconductor is connected to the capacitor 221- (1,1). For example, a field effect transistor is used as the transistor 222- (1, 1). The drain electrode or the source electrode 222c of the transistor 222 is connected to the pixel electrode 221a- (1, 1), and the gate electrode 222a is connected to the scanning line 223-1. When the drain electrode is connected to the pixel electrode 221a- (1,1), the source electrode is connected to the signal line 224-1, and when the source electrode is connected to the pixel electrode 221a- (1,1), the drain electrode is a signal. Connect to line 224-1. In addition, the pixel electrode 221 a, the capacitor 221, and the transistor 222 in other pixels are similarly connected to the scanning line 223 and the signal line 224.

  In addition, as shown in FIG. 4, the imaging panel 21 includes an initialization transistor 232-1 to 232-n in which a drain electrode is connected to the signal lines 224-1 to 224-n. In 232-1 to 232-n, the source electrode is grounded, and the gate electrode is connected to the reset line 231.

  The imaging panel 21 converts the radiation image into a digital image signal through these circuits. That is, the control circuit 30 in FIG. 4 supplies the readout signal RS to the scanning lines 223-1 to 223 -m via the scanning driving circuit 25 to perform image scanning, and outputs a digital image signal for each scanning line. Capture and convert the radiation image into a digital image signal. This will be described in detail.

  The scanning lines 223-1 to 223 -m and the reset line 231 of the imaging panel 21 are connected to the scanning drive circuit 25 as shown in FIG. When the read signal RS is supplied from the scanning drive circuit 25 to any scanning line 223-p (p is any value of 1 to m) among the scanning lines 223-1-223-m, the scanning line 223 is supplied. The transistors 222- (p, 1) to 222- (p, n) connected to −p are turned on, and the charges accumulated in the capacitors 221- (p, 1) to 221- (p, n) are signaled. Output on lines 224-1 to 224-n.

  The signal lines 224-1 to 224-n are connected to the signal converters 271-1 to 271-n of the signal selection circuit 27. In the signal converters 271-1 to 271-n, the signal lines 224-1 to 224-n are connected. Voltage signals SV-1 to SV-n corresponding to the amount of charge output above are output, and voltage signals SV-1 to SV-n output from the signal converters 271-1 to 271-n are supplied to the register 272. To do.

  The register 272 sequentially selects the voltage signal supplied from the signal converter 271 and is converted into a 12-bit or 14-bit digital image signal by the analog / digital (A / D) converter 273, and this digital image The signal is supplied to the control circuit 30 to convert the radiation image into a digital image signal in units of pixels.

  When the imaging panel 21 is initialized, first, after the reset signal RT is supplied from the scan driving circuit 25 to the reset line 231 to turn on the initialization transistors 232-1 to 232-n, The readout signal RS is supplied to the scanning lines 223-1 to 223 -m to turn on the transistors 222-(1, 1) to 222-(m, n). Then, the imaging panel 21 is initialized by discharging the charges stored in the capacitors 221- (1,1) to 221- (m, n) through the initialization transistors 232-1 to 232-n. .

  The control circuit 30 described above is connected to the memory unit 31 and the operation unit 32 and controls the operation of the radiation image detection apparatus 20 based on the operation signal PS from the operation unit 32. The operation unit 32 is provided with a plurality of switches, and initializes the imaging panel 21 and converts a digital image signal of a radiographic image based on an operation signal PS corresponding to a switch operation from the operation unit 32. The digital image signal conversion of the radiation image may be performed when the control unit 30 receives a radiation irradiation end signal from the radiation generator 10 via the connector 35. Further, the control unit 30 performs processing for storing the produced digital image signal in the memory unit 31 and the like.

Further, as shown in FIG. 2, the radiological image detection apparatus manufactured by the method for manufacturing a radiological image detection apparatus according to the present invention includes a power supply unit 34 and a memory unit 31 that stores an image signal of the radiographic image. By making the radiation image detection device 20 detachable via the connector 35, the radiation image detection device 20 can be constructed as a portable system.

  Furthermore, for example, by using a configuration in which the memory unit 31 is detachable from the radiation image detection device 20 using a nonvolatile memory, it is possible to more easily shoot radiographic images and perform image processing, thereby improving operability. That is, without connecting the radiation image detection device 20 to the image processing unit 51, only the memory unit 31 is directly attached to the image processing unit 51 and the image signal obtained by the radiation image detection device 20 is supplied to the image processing unit 51. This makes it possible to improve the operability.

  Further, when the radiological image detection apparatus 20 is used as a stationary type, power can be supplied to the apparatus 20 and the image signal read by the apparatus 20 can be read via the connector 35. It is possible to obtain an image signal of a radiographic image without providing 34 in the radiographic image detection device 20.

  Thus, in the present invention, it has been confirmed that a radiographic image can be satisfactorily converted into a digital image signal by a radiographic image detection apparatus in which the substrate 211 is provided between the scintillator unit 212 and the photoelectric conversion unit 213. It was confirmed that conversion to a digital image signal was performed reliably by configuring the substrate with a material having a light transmittance of 80% or more.

  Further, in the present invention, since the scintillator portion 212 can be coated on the substrate 212, the occurrence of defective products due to the poor coating of the scintillator portion 212, which has been a major cause of the decrease in the yield at the time of manufacture, is achieved. This makes it possible to avoid this problem, eliminates a decrease in yield, and makes it possible to significantly reduce the cost of manufacturing a radiological image detection apparatus.

It is a schematic diagram of a diagnostic system using radiation image detection equipment produced by the production method of the radiation image detecting apparatus according to the present invention. It is an external view of a radiographic image detection apparatus. It is a fragmentary sectional view of the imaging panel used for a radiographic image detection apparatus. It is a schematic diagram which shows the circuit structure of an imaging panel. It is a figure which shows the structure of organic TFT.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Radiation generator 20 Radiation image detection apparatus 21 Imaging panel 30 Control part 31 Memory part 34 Power supply part 211 Substrate 212 Scintillator part 212a Scintillator protective layer 212b Scintillator layer 213 Photoelectric conversion part 213a Transparent electrode film 213b Hole conduction layer 213c Charge generation layer 213d Electron conductive layer 213e Conductive layer 215 Insulating layer 216 Protective layer 221 Capacitor 222 Transistor 223 Scan line 224 Signal line 232 Initialization transistor

Claims (3)

A scintillator that emits light of different intensity according to the intensity of incident radiation;
A photoelectric conversion unit that photoelectrically converts light generated in the scintillator unit,
A method of manufacturing a radiological image detection apparatus disposed on a substrate,
The scintillator unit and the photoelectric conversion unit are arranged on different substrates , respectively .
A method for manufacturing a radiation image detection apparatus , comprising: bonding a substrate provided with the scintillator portion and a substrate surface of the substrate provided with the photoelectric conversion portion together . The method of manufacturing a radiological image detection apparatus according to claim 1, wherein the scintillator portion is formed on the entire surface of the substrate . The method for manufacturing a radiological image detection apparatus according to claim 1 , wherein the substrate is a resin film having a visible light transmittance of 80% or more .

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