JP4333989B2 - Method for producing electrophotographic photosensitive member - Google Patents

Description

The present invention relates to an electrophotographic photosensitive member manufacturing method in which an amorphous silicon photosensitive layer is formed on an outer peripheral surface of a cylindrical conductive substrate to manufacture an electrophotographic photosensitive member .

  As a material of a substrate for an electrophotographic photosensitive member having an amorphous silicon photosensitive layer (sometimes referred to as an a-Si photosensitive layer), aluminum or an aluminum alloy is mainly used. The substrate has a cylindrical shape, a plate shape, a belt shape or the like, but the mainstream is a cylindrical shape. The substrate is manufactured by forming aluminum or an aluminum alloy into a cylindrical shape by extruding or drawing, and further processing into a predetermined substrate shape by cutting. An electrophotographic photosensitive member having an a-Si type photosensitive layer (sometimes referred to as an a-Si type photosensitive member) has a base degreased and washed, and an a-Si type photosensitive layer is formed on the outer periphery of the base by plasma CVD. Is formed to a thickness of 10 to 100 μm. The electrophotographic apparatus equipped with the a-Si photosensitive member manufactured as described above is commercialized as a copying machine, a printer, or the like.

  In recent years, full-color electrophotographic apparatuses have been demanded to have an image equivalent to photographic quality and printing quality. Under such circumstances, not only the uniformity of the film quality of the electrophotographic photosensitive member but also the demand for mechanical accuracy has become more severe.

  In the case of a substrate formed of an aluminum alloy, as described above, a cylindrical element tube 201 as shown in FIG. 3A is formed by extrusion or drawing of the aluminum alloy, for example, an NC lathe or the like. Thus, the outer peripheral portion 204, the inner peripheral portion 205, and the end portion 206 are roughly cut to produce an inner diameter step shape (sometimes referred to as an inlay) for fitting a flange as shown in FIG. Then, the inlay processed portion 203 is cut into a cylindrical inlay processed base 202 as shown in FIG. 3B, and in order to give the inlay processed base 202 a predetermined surface property, finish cutting, It is formed by performing various types of blasting and chemical treatments. The aluminum alloy substrate thus formed is cleaned using an organic solvent or a water-based cleaning agent, and the attached oil or dirt is removed to provide an a-Si photoreceptor.

  In order to improve the dimensional characteristics of the a-Si photosensitive member, it is first necessary to improve the dimensional accuracy in the extrusion or drawing process, the dimensional accuracy in rough cutting, finish cutting, and the like. The dimensional accuracy in extrusion and drawing of aluminum alloys has been sufficiently improved along with the advancement of extrusion and drawing technologies. As a result of various processing methods that have been studied so far for cutting of aluminum alloy substrates. Recently, high-accuracy machining of aluminum alloy substrates has become possible.

  Next, as shown in FIG. 4A, an a-Si photosensitive layer 302 is formed on the produced aluminum alloy substrate 300 to form an a-Si photosensitive member 301. For example, as shown in FIG. 4B, the a-Si-based photosensitive layer 302 is formed by sequentially stacking a charge injection blocking layer 303, a photoconductive layer 304, and a surface layer 305 from the substrate 300 side. As a film forming method for forming the a-Si-based photosensitive layer 302, a plasma CVD method is mainly used, but a vacuum deposition method, an ion plating method, a sputtering method, and the like are also used.

  In the formation of the a-Si photosensitive layer 302, the substrate temperature is set for the purpose of improving the adhesion between the substrate 300 and the a-Si photosensitive layer 302 and forming a good a-Si photosensitive layer. The a-Si photosensitive layer is formed by heating to a high temperature. For this reason, there arises a problem that the substrate is deformed by heat (sometimes referred to as thermal deformation), and the manufactured a-Si photosensitive member is also deformed.

  In the conventional a-Si electrophotographic photosensitive member, as shown in FIG. 8A, the outer peripheral surface of the base end of the base before the formation of the a-Si photosensitive layer is the same as the outer peripheral surface of the central portion of the base. The spigot portions 702 are formed so as to be the same cylindrical surface, and to be a cylindrical surface coaxial with the outer peripheral surface of the base body 701. As described above, the a-Si type photosensitive member is produced by forming an a-Si type photosensitive layer while heating the substrate to a high temperature (about 200 to 350 ° C.). The produced a-Si photoconductor is returned to room temperature. At this time, stress is generated due to the difference in shrinkage due to the difference in thermal expansion coefficient between the substrate and the a-Si photoreceptive layer. As shown in FIG. 8B, the returned a-Si photoconductor is deformed so that the end portion of the substrate contracts, and the outer diameter and the inner diameter of the spigot portion 702 are reduced.

  In particular, an inlay portion having a low mechanical strength, that is, a deformation due to stress (sometimes referred to as stress deformation) is caused in the end region of the base body. For this reason, the flange cannot be attached to the inlay portion 702 or the inner diameter varies. The problem that average roundness will worsen arises. However, at present, it is technically difficult to lower the temperature during film formation of the a-Si photosensitive layer and to make the thermal expansion coefficient of the substrate and the a-Si photosensitive layer the same.

  The deformation of the a-Si photosensitive member becomes more conspicuous as the thickness of the substrate becomes thinner. For example, when the substrate shape is cylindrical as shown in FIG. 5, the end portion 403 and the end region close to the end portion are formed. Thermal deformation and stress deformation are large in the a-Si type photosensitive layer 404 of 402, the inlay portion 406 of the substrate, and the central portion 405 of the substrate adjacent to the inlay portion 406. In particular, the spigot portions 406 provided at both ends of the a-Si photosensitive member are deformed because high dimensional accuracy is required at an important portion connecting the electrophotographic apparatus and the a-Si photosensitive member. Is not preferred.

  Conventionally, as the material of an aluminum alloy substrate for forming an a-Si photosensitive layer, Al is improved in strength by adding magnesium (Mg), and the generation of crystallized substances is suppressed by reducing the mixing of impurity elements. -Mg alloy is proposed and used (for example, patent document 1). This base made of an aluminum alloy is suitable for obtaining an ultra-precision finished surface as a base for forming an a-Si photosensitive layer.

In addition, in order to correct the deformation of the end portion of the a-Si photosensitive member, the inner diameter of the spigot portion of the aluminum alloy substrate is enlarged toward the end portion so that the a-Si photosensitive layer is formed. A method has been proposed in which the inner diameter of the spigot portion of the a-Si photoconductor is made constant when the a-Si photoconductor is formed (for example, Patent Document 2). Furthermore, there has been proposed a method of improving the fitting accuracy with the flange by tapering the inner diameter of the base so as to improve the flange mounting property (for example, Patent Document 3). However, for full color use, it is not sufficient to obtain image quality equivalent to photographic quality and printing quality. About deterioration of dimensional accuracy due to thermal deformation and stress deformation when forming an a-Si photosensitive layer. There is a need for further improvements.
Japanese Patent Publication No.62-32261 Japanese Patent No. 3176235 JP 9-297500 A

In order to solve the above-mentioned problems in the electrophotographic photosensitive member having an a-Si type photosensitive layer, the present invention analyzes the mechanism of thermal deformation and stress deformation, particularly the stress deformation and the shape of the inlay portion of the aluminum alloy substrate. The object of the present invention is to provide high dimensional accuracy at the joint surface between the electrophotographic photosensitive member and the member (flange) that joins the electrophotographic apparatus. It is another object of the present invention to provide a method of manufacturing an electrophotographic photosensitive member that eliminates interference with the outer diameter of the flange caused by inner diameter squeezing due to stress deformation at the end of the electrophotographic photosensitive member.

Furthermore, the accuracy of fitting the electrophotographic photosensitive member with the flange is improved, and the rotational accuracy of the electrophotographic photosensitive member (the concentricity and flare of the electrophotographic photosensitive member) is improved, and the position of the electrophotographic photosensitive member within the electrophotographic apparatus is improved. Electrons that enable high-speed copying and high-speed printing with extremely low image density unevenness by improving the accuracy and improving the gap accuracy between the surface of the electrophotographic photosensitive member and the charger / developer to minimize displacement. An object of the present invention is to provide a method of manufacturing an electrophotographic photosensitive member that can provide a photographic apparatus.

  Furthermore, by increasing the parallelism and squareness accuracy of the fitting portion with the flange, it is possible to use a highly accurate flange.

As a result, the fitting accuracy between the flange and the electrophotographic photosensitive member is improved, and the rotational accuracy of the electrophotographic photosensitive member (coaxiality and deflection of the electrophotographic photosensitive member cylinder) is improved. By improving the positional accuracy of the electrophotographic photosensitive member and improving the gap accuracy between the surface of the electrophotographic photosensitive member and the charger / developer to minimize displacement, high-speed copying and printing can be performed with extremely low image density unevenness. Another object of the present invention is to provide a method for producing a highly durable electrophotographic photoreceptor capable of providing an electrophotographic apparatus.

This onset bright, the portion inner diameter and the portion (A) having an inner diameter larger than the central portion be constant toward the top end, is changed in a direction to expand the inner diameter toward the top end ( B) and a portion (C) having a smaller change rate of the inner diameter toward the endmost part than the part (B), in this order toward the endmost part in the end regions on both sides A total length of the longitudinal length (a) of the portion (A), the longitudinal length (b) of the portion (B), and the longitudinal length (c) of the portion (C) The ratio (a / [b + c]) to (b + c) is 4.0 / 19.0 to 6.0 / 9.0, and the length (b) in the longitudinal direction of the portion (B) The ratio (b / c) to the length (c) in the longitudinal direction of the part (C) is 1.4 / 7.8 to 3.0 / 7.0, and the thickness of the part (A) is 1.75-3.94mm Ri and an outer peripheral surface and the central portion outer peripheral surface and the outer peripheral surface to be the same cylindrical surface has a flat shape, a cylindrical conductive substrate formed of aluminum or an aluminum alloy of the end portion
While heating the characterized that you manufacture an electrophotographic photosensitive member of amorphous silicon photosensitive layer to extend in the end region on the outer peripheral surface of the cylindrical conductive substrate by depositing form.

  Further, in the electrophotographic photosensitive member of the present invention, the longitudinal length (a) of the portion (A) of the cylindrical conductive substrate of the electrophotographic photosensitive member and the longitudinal length (b) of the portion (B). The ratio (a / [b + c]) of the length (c) in the longitudinal direction of the portion (C) to the total length (b + c) is preferably 0.65 or less.

  Further, in the electrophotographic photosensitive member of the present invention, the rate of change of the inner diameter of the cylindrical conductive substrate portion (B) of the electrophotographic photosensitive member is 20 μm / mm or more and 200 μm / mm or less, and the inner diameter of the portion (C). The rate of change is preferably -4 μm / mm or more and less than 20 μm / mm.

  Further, in the electrophotographic photosensitive member of the present invention, the longitudinal length (b) of the portion (B) of the cylindrical conductive substrate of the electrophotographic photosensitive member and the longitudinal length (c) of the portion (C). The ratio (b / c) is preferably 0.20 or more and 0.40 or less.

  Further, in the electrophotographic photosensitive member of the present invention, the ratio (d / e) of the thickness (d) of the portion (A) of the cylindrical conductive substrate of the electrophotographic photosensitive member to the thickness (e) of the central portion. ) Is preferably 0.60 or more and 0.80 or less.

  Furthermore, in the electrophotographic photosensitive member of the present invention, the cylindrical conductive substrate is formed between the inner peripheral surface of the portion (A) of the cylindrical conductive substrate and the inner peripheral surface of the central portion in both end regions. It is preferable that the perpendicularity of the step surface with respect to the central axis of the cylindrical conductive substrate is 0.002 mm or more and 0.050 mm or less.

  In the electrophotographic photosensitive member of the present invention, the stepped surfaces at both end regions of the cylindrical conductive substrate are orthogonal to the inner peripheral surface of each of the adjacent portions (A), and the gap between the stepped surfaces is In the range from 320 mm to 460 mm, the parallelism between the respective step surfaces is preferably from 0.001 mm to 0.100 mm.

  Furthermore, in the electrophotographic photosensitive member of the present invention, it is preferable that the thickness (d) of the cylindrical conductive base portion (A) is 4 mm or less.

  Furthermore, in the electrophotographic photosensitive member of the present invention, it is preferable that the cylindrical conductive substrate is formed of aluminum or an aluminum alloy.

  Furthermore, the electrophotographic photoreceptor of the present invention is an electrophotographic photoreceptor for a full-color electrophotographic apparatus.

Further, the electrophotographic photosensitive member unit of the present invention that achieves the above object is provided on the outer peripheral surface of a cylindrical conductive substrate, while heating the cylindrical conductive substrate and extending amorphous silicon so as to extend to the end region. An electrophotographic photosensitive member unit in which an electrophotographic photosensitive member having a photosensitive layer formed thereon and a fixing member (flange) for rotatably installing the electrophotographic photosensitive member in an electrophotographic apparatus are fitted,
The cylindrical conductive substrate of the electrophotographic photosensitive member has an inner diameter that is constant toward the outermost portion in the end regions on both sides of the cylindrical conductive substrate and is larger than the central portion of the cylindrical conductive substrate. It has an inlay portion having at least a portion (A) having a large inner diameter Ad,
When the outer diameter of the fitting portion of the fixing member (flange) is Fd, the following formula (1)
0.000 mm ≦ Ad−Fd ≦ 0.050 mm (1)
It is characterized by satisfying the relationship.

  Further, in the electrophotographic photoreceptor unit of the present invention, the fixing member (flange) has a cylindrical fitting portion, and the fitting portion has an outer peripheral surface having the same outer diameter Fd. Or a portion having an outer peripheral surface having an outer diameter of Fd and a predetermined circumferential width (F1 portion) and a portion having an outer peripheral surface having an outer diameter less than Fd (F2 portion) It has an outer peripheral surface arranged parallel to the central axis direction of the fixing member (flange) or parallel to each other in a direction inclined at a predetermined angle, and the circumferential width of the plurality of F1 portions ( X) is the sum of the circumference of the circumference when the outer diameter is Fd, and the circumferential width (X) of one F1 portion is the circumference length. 1/16 or more is preferable.

  Furthermore, in the electrophotographic photoreceptor unit of the present invention, the plurality of F1 portions of the fitting portion of the fixing member (flange) are arranged at equal intervals or symmetrically with respect to the central axis of the fixing member (flange). It is preferable.

  Furthermore, in the electrophotographic photoreceptor unit of the present invention, the length (Y) in the central axis direction of the fitting portion of the fixing member (flange) is the portion of the cylindrical conductive substrate (A) of the electrophotographic photoreceptor. ) In the longitudinal direction (a) is preferably 1.0 mm or more and (a + b + c) mm or less.

  Furthermore, in the electrophotographic photoreceptor unit of the present invention, the material of the fixing member (flange) is a zinc cast alloy, a zinc die cast alloy, an aluminum cast alloy, an aluminum die cast alloy, an aluminum forged alloy or a powder metallurgy material. Preferably there is.

  Further, in the electrophotographic photosensitive member unit of the present invention, the electrophotographic photosensitive member is preferably the electrophotographic photosensitive member of the present invention.

  Further, in the electrophotographic photosensitive unit of the present invention, the fixing member (flange) fitted to both ends of the electrophotographic photosensitive member penetrates the rotating shaft of the electrophotographic apparatus, and the rotating shaft is fixed to the both. It is preferable to have a configuration in which the member (both flanges) is rotated about the central axis.

  Furthermore, in the electrophotographic photoreceptor unit of the present invention, it is preferable that the cylindrical conductive substrate of the electrophotographic photoreceptor is formed of aluminum or an aluminum alloy.

  Further, in the electrophotographic photoreceptor unit of the present invention, the electrophotographic photoreceptor is formed by forming an amorphous silicon photoconductive layer while heating the cylindrical conductive substrate to 250 ° C. to 350 ° C. Then, the cylindrical conductive substrate of the electrophotographic photosensitive member changes in a portion (A) having a constant inner diameter and a larger inner diameter than the central portion and a direction in which the inner diameter increases toward the outermost portion. And a portion (C) having a smaller rate of change in inner diameter toward the endmost part than the part (B), and an inlay part having an inlay part in this order toward the endmost part. An electrophotographic photoreceptor unit for a full-color electrophotographic apparatus, which is provided in an end region and has a fixing member (flange) fitted to a cylindrical conductive base portion (A) of the electrophotographic photoreceptor. It is.

  The electrophotographic photosensitive member of the present invention includes a cylindrical conductive substrate, a central portion having a constant inner diameter located between the inlay portions on both sides of the cylindrical conductive substrate, and end portions on both sides of the cylindrical conductive substrate. A region (A) (which may be referred to as a portion (A)) having an inner diameter that is constant toward the outermost portion and having a larger inner diameter than the central portion of the cylindrical conductive substrate in the region; And the rate of change of the inner diameter toward the endmost part is smaller than that of the part (B) (sometimes referred to as part (B)) that changes in the direction in which the inner diameter increases toward While heating this cylindrical conductive substrate using a cylindrical conductive substrate having an inlay portion having a portion (C) (sometimes referred to as a portion (C)) in this order toward the outermost portion, The a-Si photosensitive layer is extended so that it extends not only to the center but also to the edge region. Created by depositing formed on the outer peripheral surface.

  The electrophotographic photosensitive member of the present invention is deformed during the formation of the a-Si photosensitive layer or in the process of lowering the temperature to room temperature, but the stress is released in the portion (C), and the portion ( C) due to deformation. As a result, the inlay portion of the electrophotographic photosensitive member of the present invention is most narrowed at the portion (C), and the inner diameter of the portion (C) is slightly smaller at the end portion. It is larger than the inner diameter of the part (A) at the innermost part of the inlay part which is a joint surface with a fixing member (which may be referred to as a flange) used for fixing the electrophotographic photosensitive member to the electrophotographic apparatus, Since the flange joint surface of the portion (A) is not deformed, the accuracy before film formation of the portion (A) that is the flange joint surface can be maintained as it is. Therefore, the inner diameter dimensional accuracy and concentricity of the flange joint surface are increased, the flange fitting accuracy and the position accuracy of the electrophotographic photosensitive member in the electrophotographic apparatus are improved, and the gap accuracy between the surface of the electrophotographic photosensitive member and the developing unit is improved. The rotational accuracy of the electrophotographic photosensitive member is improved, and by mounting the electrophotographic photosensitive member of the present invention on an electrophotographic apparatus, it is possible to provide an electrophotographic image having excellent image quality with extremely little image density unevenness.

  The electrophotographic photosensitive member of the present invention has an outer diameter smaller than that of the central portion in the end region, particularly both end portions, due to the above-described deformation, but this portion is a non-image portion and adversely affects image quality. There is no. In addition, when it is mounted on the electrophotographic apparatus, setting so as not to come into contact with other members does not adversely affect the electrophotographic process.

  As described above, the electrophotographic photosensitive member of the present invention causes the stress during the film formation of the a-Si-based photosensitive layer by deformation of the end region by forming the inlay portion of the cylindrical conductive substrate in an appropriate shape. It can be said that it is absorbed and its adverse effects are avoided. This increases the inner diameter of the spigot section without increasing the thickness of the base to increase the mechanical strength of the spigot section or correcting the deformation of the spigot section by post-deposition processing to increase the cost of materials and manufacturing processes. An electrophotographic photosensitive member with good dimensional accuracy can be provided. In addition, there is no problem of variation in the inner diameter of the spigot part, the problem that the average roundness deteriorates and the flange cannot be attached to the spigot part, and there is no deformation on the flange joint surface. It is possible to provide an electrophotographic photosensitive member capable of obtaining an enhanced electrophotographic image having excellent image quality with extremely small image density unevenness.

  Some examples of embodiments of the electrophotographic photosensitive member according to the present invention are shown in FIG.

  The electrophotographic photoreceptor of the present invention has a cylindrical conductive substrate 800 and an a-Si photosensitive layer formed on the outer periphery of the cylindrical conductive substrate 800. As shown in FIG. 9A, the a-Si photosensitive layer has a photoconductive layer 803, and a surface layer 805 and a lower charge injection blocking layer 802 are provided as necessary. It can be. The photoconductive layer 803 can have a plurality of layers such as a first photoconductive layer 803 and a second photoconductive layer 804 as shown in FIG. 9B, for example. . Furthermore, as shown in FIG. 9C, the a-Si-based photosensitive layer may further include an upper charge injection blocking layer 806 as necessary.

  As a method for forming the a-Si photosensitive layer, a plasma CVD method is mainly used, but a vacuum deposition method, an ion plating method, a sputtering method, or the like can also be used.

  The electrophotographic photoreceptor of the present invention will be described in detail below.

(Cylindrical conductive substrate)
FIG. 1A is a schematic cross-sectional view showing an end region of an example of a cylindrical conductive substrate used in the present invention. FIG. 1A is a schematic diagram showing an example of an electrophotographic photoreceptor of the present invention produced using the same. A cross-sectional view is shown in FIG. The horizontal axis in FIG. 1 indicates the length of the cylindrical conductive substrate or electrophotographic photosensitive member in the longitudinal direction, with the left side of the figure being the endmost side and the right side being the center side. The vertical axis shows the case where the respective lengths in the diameter direction are divided by arbitrary equal lengths, the lower side of the figure is the inner surface side of the cylindrical conductive substrate or the electrophotographic photosensitive member, and the upper side is the outermost surface Shows the side.

  As a material constituting the cylindrical conductive substrate 104 used for producing the electrophotographic photosensitive member of the present invention, SUS (stainless steel), aluminum (Al), zinc (Zn), copper (Cu), iron (Fe). , Metal materials such as titanium (Ti), nickel (Ni), chromium (Cr), tantalum (Ta), tin (Sn), and alloy materials thereof. Among these, in order to reduce the weight of the electrophotographic photosensitive member of the present invention, this can be achieved at low cost, and the adhesiveness with the a-Si photosensitive layer 103 is high. From the viewpoint of improving the reliability of the electrophotographic photosensitive member, aluminum or an aluminum alloy material is preferable.

  The cylindrical conductive substrate 104 used in the present invention is generally formed into a hollow cylindrical element tube by extrusion or drawing, and this is used as an inlay processed substrate by cutting using a lathe, etc. Furthermore, it is formed and manufactured on a cylindrical substrate having a desired shape and dimensional accuracy through roughing and finishing by grinding.

  In consideration of water corrosion resistance and cutting workability, the cylindrical conductive substrate used in the present invention is, for example, an aluminum alloy obtained by adding magnesium to JIS 1N90, similarly silicon or JIS 5000 series or JIS 6000 series. It is preferable to use an aluminum alloy to which magnesium is added.

  The thickness (e) of the central portion of the cylindrical conductive substrate used in the present invention is appropriately set according to the required specifications. The mechanical strength and dimensions of the entire cylindrical conductive substrate and the flange joint surface are as follows. In consideration of ensuring accuracy, the thickness is usually 0.5 to 10 mm, preferably 1 to 5 mm.

  The inner conductive portion 102 of the cylindrical conductive substrate used in the present invention is formed on the inner peripheral surface of the end region of the cylindrical conductive substrate 104 by cutting a predetermined length from the end with a lathe. . The inlay portion 101 is appropriately set according to the size and the specifications that require dimensional accuracy. For example, the length of the inlay portion 101 (the length of the portion (A), the portion (B), and the portion (C)) Sum) is usually about 2 to 30 mm, and when the thickness of the central portion of the cylindrical conductive substrate is (e), the level difference of the inlay portion = thickness (e) −thickness (d) Set to about 3 to 4 mm. The shape formed toward the end portion of the inner portion 102 of the inlay portion is set according to the mechanical strength of the cylindrical conductive substrate 104, the thickness of the a-Si photosensitive layer 103, or the generated stress. A portion (A) having an inner diameter that is constant toward the outermost end and having a larger inner diameter than the central portion of the cylindrical conductive substrate 104, and a portion that changes in the direction in which the inner diameter increases toward the outermost end. (B) and a part (C) having a smaller change rate of the inner diameter toward the endmost part than the part (B), and set so that stress deformation is absorbed by the part (C).

At that time, Oite the present invention, the configuration of the cylindrical electrically conductive substrate of the socket portion 101 to be used, the longitudinal length of the portion (A) and (a), a longitudinal length of said portion (B) The ratio (a / [b + c]) of (b) and the length (c) in the longitudinal direction of the part (C) to the total length (b + c) is 4.0 / 19.0 to 6.0 / 9. 0.0 , but preferably 0.65 or less. When this ratio (a / [b + c]) is 0.65 or less, that is, the length in the longitudinal direction of the part (part (B) and part (C)) where the inner diameter is changed is the flange joint surface. When the length is relatively long with respect to the length of the portion (A), the stress deformation can be sufficiently received by the portions (C) and (B), and the portion (A) is not deformed .

Furthermore, as shown in FIG. 12, the position of the end of the inlay portion of the cylindrical conductive substrate used in the present invention is the E / C position, and the position of the boundary line between the portions (C) and (B) is C / C. When the inner diameter change rate of the portion (B) of the cylindrical conductive substrate is expressed by an equation when the position B and the position of the boundary line between the portion (B) and the portion (A) are expressed as B / A positions, respectively, { (Inner diameter at C / B position) − (Inner diameter at B / A position)} / (Length in the longitudinal direction of part (B))
Further, the rate of change in the inner diameter of the portion (C) is expressed by an expression {(the inner diameter at the E / C position) − (the inner diameter at the C / B position)} / (the length in the longitudinal direction of the portion (C)).
It is.

  The change rate of the inner diameter of the portion (B) of the cylindrical conductive substrate used in the present invention is 20 μm / mm or more and 200 μm / mm or less, and the change rate of the inner diameter of the portion (C) is −4 μm / mm or more and less than 20 μm / mm. By doing so, the effect of the present invention can be obtained satisfactorily.

  If the rate of change of the inner diameter of the part (B) of the cylindrical conductive substrate used in the present invention is 20 μm / mm or more, the difference between the part (A) and the part (B) increases, As a result, stress is applied to the portion (C) having a small wall thickness, and deformation does not reach the portion (A). Further, if the change rate of the inner diameter of the part (B) is 200 μm / mm or less, it is related to the axial length (c) of the part (C), but the end of the spigot part or the part (C) A sufficient thickness can be ensured, and deformation of the extreme end of the portion (C) can be prevented from becoming too large. Furthermore, the mechanical strength of the part (B) and the part (C) is not insufficient.

  When the rate of change of the inner diameter of the portion (C) of the cylindrical conductive substrate used in the present invention is −4 μm / mm or more, even when stress deformation is large, interference with the flange does not occur. If the thickness is less than 20 μm / mm, the thickness of the outermost end can be set sufficiently thick, so that the mechanical strength of the end becomes sufficient, and a light impact or an electrophotographic photosensitive member manufactured using the same can be obtained. Even when placed upright, it is not damaged or deformed, and the electrophotographic photosensitive member produced using the same is easily handled.

  The thickness (e) of the central portion of the cylindrical conductive substrate used in the present invention is preferably 10 mm or less as described above. When the thickness (e) of the central portion of the cylindrical conductive substrate is 5 mm or less, cost reduction and weight reduction of the electrophotographic photosensitive member can be achieved. Increasing the thickness of the central portion of the cylindrical conductive substrate increases mechanical strength and reduces stress deformation, but increases weight and costs. In the case of using a cylindrical conductive substrate formed of aluminum or an aluminum alloy, the present invention is particularly effective in terms of cost reduction and weight reduction.

  The wall thickness (e) is more preferably 1 mm or more and 5 mm or less, and further preferably 2 mm or more and 3 mm or less.

  Furthermore, it is preferable to chamfer the corner portions of the inlay portion so that they do not interfere during flange fitting. Chamfering is preferably performed at C0.2 or more and C0.4 or less.

(Electrophotographic photoreceptor)
The electrophotographic photosensitive member of the present invention is obtained by forming an amorphous silicon photosensitive layer on the surface of the cylindrical conductive substrate.

  FIG. 12 shows a schematic diagram of the inlay portion of the cylindrical conductive substrate of the electrophotographic photosensitive member of the present invention. The position of the end of the inlay part of the electrophotographic photosensitive member is the E / C position, the position of the boundary line between part (C) and part (B) is the C / B position, and the boundary between part (B) and part (A) When the position of the line is expressed as the B / A position, and the inner diameter change rate of the part (B) is expressed by an equation, {(inner diameter at the C / B position) − (inner diameter at the B / A position)} / (part (B) length in the longitudinal direction). When the rate of change of the inner diameter of the cylindrical conductive substrate portion (B) of the electrophotographic photosensitive member of the present invention is a positive value, the inner diameter at the C / B position is larger than the inner diameter at the B / A position. When the rate of change in the inner diameter of the portion (B) is a negative value, the inner diameter at the C / B position is smaller than the inner diameter at the B / A position.

  Further, the rate of change in the inner diameter of the cylindrical conductive substrate portion (C) of the electrophotographic photosensitive member of the present invention can be expressed by a formula {(inner diameter at E / C position) − (inner diameter at C / B position)} / ( When the rate of change in the inner diameter of the portion (C) is a positive value, the inner diameter of the E / C position is larger than the inner diameter of the C / B position. When the change rate of the inner diameter of the portion (C) is a negative value, the inner diameter at the E / C position is smaller than the inner diameter at the C / B position.

  The change rate of the inner diameter of the portion (B) of the cylindrical conductive substrate of the electrophotographic photosensitive member of the present invention is 20 μm / mm to 200 μm / mm, and the change rate of the inner diameter of the portion (C) is −4 μm / mm to 20 μm / mm. When it is less than mm, the effect of the present invention is preferably obtained, which is preferable.

  When the rate of change of the inner diameter of the part (B) is 20 μm / mm or more, the difference between the part (A) and the part (B) increases, and the result is obtained with the part (C) having a relatively small thickness. Therefore, it is assumed that there is little deformation reaching the part (A). Further, if the rate of change of the inner diameter of the part (B) is 200 μm / mm or less, it is related to the axial length (c) of the part (C), but the endmost part of the spigot part and the part (C) Can be sufficiently secured, and the deformation of the extreme end of the portion (C) can be prevented from becoming too large. Furthermore, the mechanical strength of the part (B) and the part (C) is not insufficient.

  The change rate of the inner diameter of the part (B) is more preferably 20 μm / mm to 180 μm / mm, and further preferably 20 μm / mm to 100 μm / mm.

  When the rate of change of the inner diameter of the portion (C) is −4 μm / mm or more, even when the stress deformation is large, there is no interference with the flange. If the thickness is less than 20 μm / mm, the thickness of the outermost end can be set sufficiently thick, so that the mechanical strength of the end becomes sufficient, even when a light impact or an electrophotographic photosensitive member is set upright. The electrophotographic photosensitive member is easily handled without being damaged or deformed. The change rate of the inner diameter of the portion (C) is more preferably −2 μm / mm or more and less than 20 μm / mm.

In the present invention , the ratio (b / c) between the longitudinal length (b) of the portion (B) and the longitudinal length (c) of the portion (C) of the cylindrical conductive substrate is 1. Although it is set to 4 / 7.8-3.0 / 7.0, when it is 0.20 or more and 0.40 or less, the effect of this invention will be acquired favorably. When this ratio (b / c) is 0.20 or more, the thickness of the portion (C) is relatively reduced, and most of the stress is received in the portion (C). There is no deformation until A). When the ratio (b / c) is 0.40 or less, the portion (C) undergoes stress deformation and the stress is eliminated, so the portion (B) hardly deforms and is deformed into the portion (A). Will not reach. The ratio (b / c) is more preferably 0.20 or more and 0.30 or less.

  Furthermore, the effect of this invention is acquired favorably by the ratio of the thickness (d) of the said part (A) and the thickness (e) of a center part being 0.60 or more and 0.80 or less. When this ratio (d / e) is 0.60 or more, the strength of the spigot portion can be set large, and particularly, the strength of the extreme end portion can be set large. If this ratio is 0.80 or less, the portion A is formed between the inner peripheral surface of the portion A and the inner peripheral surface of the central portion formed at the central portion side position (may be referred to as A / M position). The formed step surface (AP) becomes large, and when the flange and the electrophotographic photosensitive member of the present invention are fitted, the step of the joint surface can be made sufficient, and the strength of the step is not greatly damaged. . Furthermore, the difference in thickness between the spigot part and the central part is large, and stress deformation does not reach the central part. The ratio (d / e) is more preferably 0.70 or more and 0.80 or less.

  The cylindrical conductive substrate of the electrophotographic photosensitive member of the present invention has step surfaces (AP) formed between the inner peripheral surface of the portion A and the inner peripheral surface of the central portion at both end regions. The perpendicularity of the surface with respect to the central axis of the cylindrical conductive substrate is preferably 0.002 mm or more and 0.050 mm or less. The squareness is more preferably 0.002 mm or more and 0.030 mm or less.

  If the perpendicularity between the step surface (AP) and the central axis of the cylindrical conductive substrate is 0.002 mm or more, it is preferable in terms of dimensional management and cost, and if this perpendicularity is 0.050 mm or less, the rotation center and the flange are orthogonal In addition, the fitting between the rotating shaft and the flange becomes smooth, which can reduce eccentricity and stress on the parts brought into contact with the rotating shaft and the surface of the photosensitive member.

  In the present invention, the perpendicularity is obtained when two planes perpendicular to the reference axis (the central axis of the cylindrical conductive substrate of the electrophotographic photosensitive member) sandwich the evaluation surface (step surface at the A / M position). The distance between them was a squareness (axis reference). The perpendicularity can be evaluated by using a measuring instrument such as MITTSUTOYO, ROUNDTEST = RA-400 (manufactured by Mitutoyo Corporation; trade name), which will be described later.

  Furthermore, the step surface (AP) that the cylindrical conductive substrate of the electrophotographic photosensitive member of the present invention has in both end regions is orthogonal to the inner peripheral surface of each adjacent portion (A), and between these step surfaces. The parallelism is preferably 0.001 mm or more and 0.100 mm or less when the interval between the step surfaces is 320 mm or more and 460 mm or less. The parallelism is more preferably 0.0011 mm or more and 0.075 mm or less.

  If the parallelism between the stepped surfaces (AP) of the both end regions of the electrophotographic photosensitive member is 0.001 mm or more, it is preferable from the viewpoint of dimensional management and cost of the substrate, and if the parallelism is 0.100 mm or less, the rotation axis and It is preferable because the fitting of the flange becomes smooth, stress on the rotating shaft can be reduced, and eccentricity and rotational torque can be reduced.

  In the present invention, the parallelism is calculated when the evaluation surface (step surface on the side different from the reference surface) is sandwiched between two planes parallel to the reference surface (step surface at one A / M position). The distance between the two planes was defined as parallelism. The parallelism can be evaluated using a measuring instrument such as MITTSUTOYO, ROUNDTEST = RA-400 (manufactured by Mitutoyo Corporation; trade name), which will be described later.

(Electrophotographic photoconductor unit)
An example of the electrophotographic photosensitive member unit of the present invention using the electrophotographic photosensitive member of the present invention and having improved fitting accuracy with a fixing member (flange) is shown in FIG.

  The electrophotographic photosensitive member unit of the present invention includes an electrophotographic photosensitive member (1201) and a fixing member (sometimes referred to as a flange) that rotatably installs the electrophotographic photosensitive member (1201) in an electrophotographic apparatus (1202). The flange (1202) is fitted to the inlay portion at both ends of the electrophotographic photosensitive member (1201) via the fitting portion (1203) of this flange. Insert the flange fitting part to the position of the step surface (AP) of the inlay part of the electrophotographic photosensitive member so that the flange fits with the fitting part of the flange and the part A of the inlay part of the electrophotographic photosensitive member. It is preferable to make it fit.

The electrophotographic photosensitive member unit of the present invention includes an inlay portion having at least a portion (A) having an inner diameter Ad that is constant toward the outermost end and has a larger inner diameter Ad than the central portion in the end regions on both sides. When the outer diameter of the electrophotographic photosensitive member and the fitting portion of the flange is Fd, the following formula (1)
0.000 mm ≦ Ad−Fd ≦ 0.050 mm (1)
And a flange having a fitting portion that satisfies the above relationship.

  The flange (flange fitting portion) used in the electrophotographic photosensitive member unit of the present invention can be installed so that the electrophotographic photosensitive member can be rotated in the electrophotographic apparatus with the rotational accuracy required for the electrophotographic apparatus. If there is, the shape is not particularly limited. In the electrophotographic photosensitive member unit of the present invention, for example, a cylindrical shape as shown in FIG. 15A or a portion having an outer peripheral surface whose outer diameter is Fd as shown in FIGS. 15B to 15D. (It may be expressed as F1 portion) and a portion having an outer peripheral surface whose outer diameter is less than Fd (may be expressed as F2 portion) are alternately inclined in parallel with the central axis direction of the flange or at a predetermined angle. It is possible to use one having a cylindrical shape with outer peripheral surfaces arranged parallel to each other. When using a flange having a shape as shown in FIGS. 15B to 15D (fitting portion of the flange), a plurality of F1 portions should be arranged at equal intervals or symmetrically with respect to the center axis of the flange. Is preferred. Further, the total circumferential width X (shown in FIG. 15 (b)) of the F1 portion is ½ or more of the circumference when the outer diameter is Fd, and one F1 portion. It is preferable that the circumferential width (X) is 1/16 or more of the circumference when the outer diameter is Fd, and a plurality of F1 portions are arranged at equal intervals.

  Further, the length Y (shown in FIG. 14) of the flange (fitting portion of the flange) in the central axis direction is the length (a) in the longitudinal direction of the portion (A) of the cylindrical conductive substrate of the electrophotographic photosensitive member. On the other hand, it is preferably 1.0 mm or more (a + b + c) (corresponding to the total length of the inlay portion in the cylindrical conductive substrate of the electrophotographic photosensitive member of the present invention) mm or less.

  The material of the flange used in the electrophotographic photosensitive member unit of the present invention is not particularly limited as long as the required accuracy can be achieved. Preferable examples include zinc cast alloy, zinc die cast alloy, aluminum cast alloy, aluminum die cast alloy, aluminum forged alloy, and powder metallurgy material.

  For example, ZDC1 or ZDC2 of JIS H5301 (1990) is used as the zinc casting alloy. Examples of the aluminum casting alloy include JIS H5202 (1999) AC2A, AC2B, AC8A, AC8B, AC8C, AC9A, and AC9B. As the aluminum forged alloy, for example, alloys of 4000, 6000, and 7000 series described in JIS H4140 (1988) are used. In addition, powder metallurgy materials can be used.

  Among these, zinc cast alloy ZDC2 is particularly preferable from the viewpoint of productivity and accuracy.

(A-Si photosensitive layer)
The electrophotographic photosensitive member of the present invention has an a-Si photosensitive layer formed using an amorphous silicon-based material based on amorphous silicon (sometimes referred to as a-Si).

  In the present invention, in order to form an a-Si photosensitive layer by the glow discharge method, basically, a Si supply source gas capable of supplying silicon atoms (Si) and hydrogen atoms (H) can be supplied. A raw material gas for supplying hydrogen atoms (H) and / or a raw material gas for supplying halogen atoms (X) capable of supplying halogen atoms (X) are introduced into the reaction vessel in a desired state in a gaseous state, and the reaction vessel If a glow discharge is caused to occur and a layer made of hydrogenated and / or halogenated a-Si (a-Si: H, X) is formed on a predetermined cylindrical conductive substrate previously set at a predetermined position Good.

Examples of the substance that can be a gas for supplying Si used in the present invention include silicon hydrides (silanes) in a gas state such as SiH ₄ , Si ₂ H ₆ , Si ₃ H ₈ , Si ₄ H ₁₀ , or the like that can be gasified. Can be cited as effectively used. Of these, SiH ₄ and Si ₂ H ₆ are preferable in terms of ease of handling when forming an a-Si photosensitive layer and good Si supply efficiency. Then, hydrogen atoms (H) are structurally introduced into the a-Si photosensitive layer to be formed, so that the control of the introduction ratio of hydrogen atoms (H) is further facilitated, and the desired film characteristics are obtained. In order to obtain this, it is preferable to form a layer by mixing a desired amount of a gas of a silicon compound containing H ₂ and / or He or a hydrogen atom with these gases. In addition, each gas may be mixed not only with a single species but also with a plurality of species at a predetermined mixing ratio.

  Examples of the raw material gas for supplying the halogen atom (X) used in the present invention are gaseous or gasified such as halogen gas, halide, interhalogen compound containing halogen, and silane derivative substituted with halogen. The halogen compound obtained can be mentioned. Further, a silicon compound containing a halogen atom that is gaseous or can be gasified containing silicon atoms and halogen atoms as constituent elements can also be mentioned as effective.

Specific examples of halogen compounds that can be suitably used in the present invention include interhalogen compounds such as fluorine gas (F ₂ ), BrF, ClF, ClF ₃ , BrF ₃ , BrF ₅ , IF ₅ , and IF _7. Can be mentioned. Moreover, as a silicon compound containing a halogen atom, a so-called silane derivative substituted with a halogen atom, specifically, silicon fluoride such as SiF ₄ and Si ₂ F ₆ can be mentioned as a preferable one.

  In order to control the amount of hydrogen atoms (H) or halogen atoms (X) contained in the a-Si photosensitive layer, for example, the temperature of the cylindrical conductive substrate, hydrogen atoms (H) or halogen atoms (X) What is necessary is just to control the introduction amount, discharge power, etc. of the raw material used in order to make it contain in the reaction container.

  In the electrophotographic photosensitive member of the present invention, it is preferable that an a-Si photosensitive layer contains an atom for controlling conductivity as required. Atoms that control conductivity may be contained in the a-Si photosensitive layer in a uniformly distributed state, or there may be portions that are contained in a non-uniformly distributed state in the layer thickness direction. There may be. Examples of the atoms that control the conductivity include so-called impurities (sometimes referred to as dopants) in the semiconductor field, and atoms belonging to Group 13 of the periodic table (sometimes referred to as Group 13 atoms) or An atom belonging to Group 15 of the periodic table (sometimes referred to as a Group 15 atom) can be used. Specific examples of group 13 atoms include boron (B), aluminum (Al), gallium (Ga), indium (In), and thallium (Tl, etc.), with B, Al, and Ga being particularly preferred. . Specific examples of the Group 15 atom include phosphorus (P), arsenic (As), antimony (Sb), and bismuth (Bi), and P and As are particularly preferable.

The content of atoms controlling the conductivity contained in the a-Si photosensitive layer is preferably 1 × 10 ⁻² to 1 × 10 ⁴ atom ppm, more preferably 5 × 10 ^{−2 to} 5 × 10 ³ atoms. ppm, more preferably 1 × 10 ⁻¹ to 1 × 10 ³ atomic ppm.

  In order to structurally introduce an atom for controlling conductivity, for example, a group 13 atom or a group 15 atom, a source material for introducing a group 13 atom or a group of atoms is introduced during the formation of the a-Si photosensitive layer. The source material for introducing group 15 atoms may be introduced into the reaction vessel in a gas state together with other gases for forming the a-Si photosensitive layer. Accordingly, when structurally introducing an atom for controlling conductivity, a source material for introducing a group 13 atom or a source material for introducing a group 15 atom can be a gaseous material at normal temperature and pressure. Alternatively, it is preferable to employ one that can be easily gasified at least under the layer formation conditions.

As the raw material for introducing the group 13 atom, specifically, for introducing the boron atom, B ₂ H ₆ , B ₄ H ₁₀ , B ₅ H ₉ , B ₅ H ₁₁ , B ₆ H ₁₀ , B Examples thereof include boron hydrides such as ₆ H ₁₂ and B ₆ H ₁₄ and boron halides such as BF ₃ , BCl ₃ and BBr ₃ . Specific examples of source materials that can be used for introducing other Group 13 atoms include AlCl ₃ , GaCl ₃ , Ga (CH ₃ ) ₃ , InCl ₃ , and TlCl ₃ .

Effectively used as a raw material for introducing a group 15 atom, for introducing a phosphorus atom, phosphorus hydride such as PH ₃ and P ₂ H ₄ , PF ₃ , PF ₅ , PCl ₃ , PCl ₅ , Phosphorus halides such as PBr ₃ and PI ₃ , and PH ₄ I. Examples of materials that can be effectively used as other Group 15 atom introduction materials include AsH ₃ , AsF ₃ , AsCl ₃ , AsBr ₃ , AsF ₃ , SbH ₃ , SbF ₃ , SbF ₅ , SbCl ₃ , SbCl _5. BiH ₃ , BiCl ₃ , BiBr _{3 and the} like.

In addition, these raw material materials for introducing atoms for controlling conductivity can be used by diluting with H ₂ and / or He as necessary. In order to achieve the object of the present invention and form an a-Si photosensitive layer having desired characteristics, the mixing ratio of Si supply gas and dilution gas, gas pressure in the reaction vessel, discharge power, and cylindrical shape It is preferable to appropriately set the temperature of the conductive substrate.

The optimum range of the flow rate of H ₂ and / or He used as the dilution gas is appropriately selected according to the layer design. It is desirable to control H ₂ and / or He in a volume ratio of 1 to 20 times, preferably 3 to 15 times, and more preferably 5 to 10 times with respect to the Si supply gas.

Similarly, the optimum range of the gas pressure in the reaction vessel is appropriately selected according to the layer design. Gas pressure in the reaction container unit is usually ^{1 × 10 -2 ~1 × 10 3} Pa, preferably ^{5 × 10 -2 ~5 × 10 2} Pa, and more preferably 1 × 10 ^-1 ~2 × 10 ² Pa. Similarly, the optimum range of the discharge power is also selected according to the layer design, but the ratio (P / V) of the discharge power P (W) to the flow rate V (ml / min (normal) of Si supply gas is In general, it is desirable to set the value within the range of 0.1 to 7, preferably 0.5 to 6, and most preferably 0.7 to 5. Further, the temperature of the cylindrical conductive substrate is appropriately determined according to the layer design. The optimum range is selected, but in the normal case, it is preferably 200 to 450 ° C.

  In the present invention, the above-described ranges are mentioned as desirable numerical ranges of the temperature and gas pressure of the cylindrical conductive substrate for forming the a-Si-based photosensitive layer. However, it is desirable to determine an optimum value based on mutual and organic relevance in order to form an a-Si photosensitive layer having desired characteristics.

  Next, each layer constituting the a-Si type photosensitive layer will be further described.

[Photoconductive layer]
The photoconductive layers 803 and 804 of the electrophotographic photosensitive member of the present invention are amorphous materials (a-Si (H, X)) containing silicon atoms as a main component and usually further containing hydrogen atoms and / or halogen atoms. May be expressed).

  The photoconductive layers 803 and 804 are preferably formed by a plasma CVD method. By the above method, a high-quality and uniform photoconductive layer having a large area can be formed.

  The photoconductive layer has a thick layer thickness among the layers constituting the electrophotographic photosensitive member, and high uniformity is required for the film quality. Therefore, it is preferable to use a manufacturing apparatus that employs a source gas introduction pipe having a gas hole arrangement optimized for the photoconductive layer.

  In addition, it is a process of forming this photoconductive layer that protrusions that may cause image defects are likely to grow. Therefore, in the process of forming the photoconductive layer on the outer periphery of the cylindrical conductive substrate, the deposition of fine particles of decomposition products of the source gas, which may act as a nucleus for generating protrusions, on the surface of the photoconductive layer is prevented. It is preferable to do this.

Examples of source materials that can be used to form the photoconductive layer include silicon hydrides (silanes) in a gas state such as SiH ₄ , Si ₂ H ₆ , Si ₃ H ₈ , Si ₄ H ₁₀ , or the like that can be gasified. be able to. These raw materials can be introduced into a production apparatus as a raw material gas and decomposed by high-frequency power to form a photoconductive layer on the outer periphery of the cylindrical conductive substrate. Further, SiH ₄ and Si ₂ H ₆ are preferably used from the viewpoint of easy handling at the time of layer preparation and good Si supply efficiency.

  The temperature of the cylindrical conductive substrate in the step of forming the photoconductive layer is preferably 150 ° C. to 450 ° C. It is more preferable to maintain the temperature at about 200 ° C to 350 ° C. If the cylindrical conductive substrate in the process of forming the photoconductive layer is set to the above temperature, it is estimated that the surface reaction on the film growth surface of the photoconductive layer is promoted and the structure can be sufficiently relaxed. ing.

Similarly, the optimum range of the gas pressure in the reaction vessel is appropriately selected according to the layer design. Gas pressure in the normal reaction ^{vessel, 1 × 10 -2 ~1 × 10} 3 Pa, preferably ^{5 × 10 -2 ~5 × 10 2} Pa, and more preferably 1 × 10 ^-1 ~1 × 10 ² Pa.

In addition, it is also preferable in terms of improving the characteristics that the photoconductive layer is formed by mixing a desired amount of a gas containing H ₂ or a halogen atom with the source gas. As source gases for supplying halogen atoms, interhalogen compounds such as fluorine gas (F ₂ ), BrF, ClF, ClF ₃ , BrF ₃ , BrF ₅ , IF ₅ and IF ₇ are effective. It is also preferable to use a silicon compound containing a halogen atom. Preferred examples of the silicon compound containing a halogen atom include silane derivatives substituted with a halogen atom, specifically, silicon fluorides such as SiF ₄ and Si ₂ F ₆ . Also, a source gas for supplying carbon atoms, for example, CH ₄ , C ₂ H ₆ , C ₃ H ₈ , C ₄ H _10, etc. is diluted with a gas such as H ₂ , He, Ar, Ne, etc. as necessary. May be used.

  The total thickness of the photoconductive layers 803 and 804 is not particularly limited, but about 10 to 60 μm is appropriate in consideration of manufacturing costs.

  Further, in order to improve the characteristics, the photoconductive layer may be a photoconductive layer having a plurality of layer configurations. For example, as shown in FIGS. 9B and 9C, a photoconductive layer having a two-layer structure such as a first photoconductive layer 803 and a second photoconductive layer 804 may be used. For example, the photosensitivity and charging characteristics can be improved simultaneously by disposing a photoconductive layer having a narrower band gap on the surface side and a photoconductive layer having a wider band gap on the substrate side. For a light source having almost no wavelength variation, such as a semiconductor laser, an epoch-making effect can be obtained by using a photoconductive layer having such a layer structure. In particular, in the case of a light source such as a laser, the film thickness necessary for absorbing a light amount of 70% or more of the photoconductive layer having a narrow band gap in the previous period according to the laser wavelength of image exposure is arranged. Even better effects can be obtained.

  In addition, although the layer thickness of each layer is not particularly limited, as described above, considering the manufacturing cost and the like, the total layer thickness is appropriately about 10 to 60 μm.

[Lower charge injection blocking layer]
Further, as described above, a lower charge injection blocking layer 802 may be further provided as necessary in the a-Si photosensitive layer of the electrophotographic photosensitive member of the present invention. In the electrophotographic photoreceptor of the present invention, the lower charge injection blocking layer 802 provided as necessary is generally based on a-Si (H, X), and is a dopant such as a group 13 element or a group 15 element. It is possible to control the conductivity type and to have the ability to prevent carrier injection from the substrate. In this case, if necessary, the stress is adjusted by containing at least one element selected from carbon (C), nitrogen (N), and oxygen (O) to improve the adhesion between the photoconductive layer and the substrate. It can also have a function.

  In the lower charge injection blocking layer, group 13 atoms serving as dopants that can be used to control conductivity are specifically boron (B), aluminum (Al), gallium (Ga), and indium. (In), thallium (Tl), and the like, and B and Al are particularly preferable. Specific examples of the Group 15 atom include phosphorus (P), arsenic (As), antimony (Sb), and bismuth (Bi). P is particularly preferable.

Further, as a raw material for introducing a group 13 atom, specifically, for introducing a boron atom, B ₂ H ₆ , B ₄ H ₁₀ , B ₅ H ₉ , B ₅ H ₁₁ , B ₆ H ₁₀ , Examples thereof include boron hydrides such as B ₆ H ₁₂ and B ₆ H ₁₄ , and boron halides such as BF ₃ , BCl ₃ and BBr ₃ . Specific examples of the source material that can be used to introduce other atoms include AlCl ₃ , GaCl ₃ , Ga (CH ₃ ) ₃ , InCl ₃ , TlCl _{3, and the} like.

Among these, B ₂ H ₆ is one of the preferable raw materials from the viewpoint of handling.

Effectively used as a raw material for introducing Group 15 atoms are phosphorus hydrides such as PH ₃ and P ₂ H ₄ for introducing phosphorus atoms, PF ₃ , PF ₅ , PCl ₃ , PCl ₅ , Examples thereof include phosphorus halides such as PBr ₃ and PI ₃ , and PH ₄ I. Specific examples of raw materials that can be used to introduce other atoms include AsH ₃ , AsF ₃ , AsCl ₃ , AsBr ₃ , AsF ₃ , SbH ₃ , SbF ₃ , SbF ₅ , SbCl ₃ , SbCl ₅ , BiH ₃ , BiCl ₃ , BiBr _{3 and the} like can be cited as effective raw material materials for introducing Group 15 atoms.

The content of the dopant atom is preferably 1 × 10 ⁻² to 1 × 10 ⁴ atom ppm, more preferably 5 × 10 ^{−2 to} 5 × 10 ³ atom ppm, and most preferably 1 × 10 ⁻¹ to 1 ×. It is preferably 10 ³ atomic ppm.

Also, in this case, carbon (C), nitrogen (N), and oxygen (O) are selected as necessary for the purpose of adjusting the stress and providing the function of improving the adhesion with the photoconductive layer. As a raw material for containing at least one element, specifically, as a raw material for introducing a carbon (C) atom, for example, CH ₄ , C ₂ H ₂ , C ₂ H ₆ , C ₃ H ₈ , C ₄ H ₁₀ , as a source material for introducing nitrogen (N) atoms, for example, as a source material for introducing NH ₃ , NO ₂ , N ₂ O, NO, N ₂ , oxygen (O) atoms, for example, mention may be made of _{NO 2, N 2 O, NO} , O 2, CO, and CO _2. Among these, CH ₄ and C ₂ H ₂ are used as raw materials for introducing carbon atoms, NH ₃ , NO, and N ₂ are used as raw materials for introducing nitrogen, and NO and O ₂ are used as raw materials for introducing oxygen. , CO and CO ₂ are preferred.

[Upper charge injection blocking layer]
Further, as described above, an upper charge injection blocking layer 806 may be further provided as necessary in the a-Si photosensitive layer of the electrophotographic photosensitive member of the present invention. The upper charge injection blocking layer 806 is made of a-Si containing a-Si as a base material and containing at least one element selected from carbon (C), nitrogen (N), and oxygen (O) as necessary. Can be configured. The upper charge injection blocking layer 806 has a function of blocking charge injection from the surface side to the photoconductive layer side when the electrophotographic photosensitive member is subjected to charging treatment with a certain polarity on its free surface. However, such a function is not exhibited when subjected to a reverse polarity charging process. In order to provide such a function, it is preferable that the upper charge injection blocking layer 806 appropriately contains a dopant for controlling conductivity.

  As a dopant used for such a purpose, a Group 13 atom or a Group 15 atom can be used in the present invention. Specific examples of such group 13 atoms include boron (B), aluminum (Al), gallium (Ga), indium (In), and thallium (Tl). Boron (B) is particularly preferable. Specific examples of the Group 15 atom include phosphorus (P), arsenic (As), antimony (Sb), and bismuth (Bi). Phosphorus is particularly preferable.

  The necessary content of the dopant for controlling the conductivity contained in the upper charge injection blocking layer 806 cannot be generally determined depending on the composition of the upper charge injection blocking layer 806 and the manufacturing method. On the other hand, it is 100 atom ppm or more and 30,000 atom ppm or less, and more preferably 500 atom ppm or more and 10,000 atom ppm or less.

  The atoms controlling the conductivity contained in the upper charge injection blocking layer 806 may be distributed uniformly in the upper charge injection blocking layer 806 or distributed unevenly in the layer thickness direction. It may contain. However, in any case, in the in-plane direction parallel to the surface of the cylindrical conductive substrate, it is preferable that it is contained evenly in a uniform distribution from the viewpoint of uniform characteristics in the in-plane direction.

  The upper charge injection blocking layer 806 can be made of any material as long as it is an a-Si material, but is preferably made of the same material as the surface layer 805. That is, materials such as “a-SiC: H, X”, “a-SiO: H, X”, “a-SiN: H, X”, “a-SiCON: H, X” are preferably used. The carbon atoms (C), nitrogen atoms (N) or oxygen atoms (O) contained in the upper charge injection blocking layer 806 may be uniformly distributed in the layer or in the layer thickness direction. You may contain in the state distributed unevenly. However, in any case, in the in-plane direction parallel to the surface of the substrate, it is preferable that it is contained evenly in a uniform distribution from the viewpoint of uniform characteristics in the in-plane direction.

  The content of carbon (C) atoms, nitrogen (N) atoms or oxygen (O) atoms contained in the entire layer region of the upper charge injection blocking layer 806 is appropriately determined so that the object of the present invention can be effectively achieved. Although it is determined, the amount is preferably in the range of 10 atomic% to 70 atomic% with respect to the total with silicon as the amount in the case of one type and the total amount in the case of two or more types.

  The upper charge injection blocking layer 806 normally preferably contains hydrogen (H) atoms or halogen (X) atoms. This is presumed to be because these atoms compensate for dangling bonds of silicon atoms and improve the layer quality, particularly the photoconductivity and charge retention characteristics. The content of hydrogen (H) atoms is usually 30 to 70 atom%, preferably 35 to 65 atom%, more preferably 40 to 60 atom%, based on the total amount of constituent atoms. Further, the content of the halogen (X) atom is usually from 0.01 to 15 atom%, preferably from 0.1 to 10 atom%, more preferably from 0.5 to 5 atom%.

  Furthermore, it is also preferable that the composition of the upper charge injection blocking layer 806 is continuously changed from the photoconductive layers 803 and 804 toward the surface layer 805. This is effective not only in improving adhesion but also in preventing interference.

  In order to form the upper charge injection blocking layer 806, the mixing ratio between the Si supply gas and the carbon (C) atom, nitrogen (N) atom, or oxygen (O) atom source gas, reaction vessel It is preferable to appropriately set the gas pressure, discharge power, and temperature of the cylindrical conductive substrate.

  Examples of the source material for introducing carbon (C) atoms, nitrogen (N) atoms, or oxygen (O) atoms introduced into the reaction vessel to form the upper charge injection blocking layer 806 include the lower charge injection blocking layer. The thing similar to what was used for formation of 802 can be used.

Similarly, the optimum range of the gas pressure in the reaction vessel is appropriately selected according to the layer design, but in the normal case, 1 × 10 ⁻² to 1 × 10 ³ Pa, preferably 5 × 10 ^{−2 to} 5 × 10 ² Pa. More preferably, it is 1 × 10 ⁻¹ to 1 × 10 ² Pa.

  Further, the temperature of the cylindrical conductive substrate is appropriately selected in accordance with the layer design, but is usually 150 to 350 ° C., preferably 180 to 330 ° C., more preferably 200 to 300 ° C.

  In the present invention, the above-mentioned ranges can be mentioned as desirable numerical ranges of the mixing ratio of the source gas, the gas pressure, the discharge power, and the temperature of the cylindrical conductive substrate for forming the upper charge injection blocking layer 806. The upper charge injection blocking layer fabrication conditions are not usually determined separately, but the upper charge injection blocking layer is formed on the basis of mutual and organic relevance in order to form an electrophotographic photoreceptor having desired characteristics. It is preferable to determine the optimum value of the layer preparation conditions.

[Surface layer]
As described above, the a-Si photosensitive layer of the electrophotographic photosensitive member of the present invention can be provided with a surface layer 805 on the outermost surface as necessary. The surface layer 805 has a free surface. The surface layer 805 is a layer containing a-Si as a base and containing a relatively large amount of at least one of carbon (C) atom, nitrogen (N) atom, and oxygen (O) atom as required. Has environmental properties, wear resistance and scratch resistance. As a result, the electrophotographic photoreceptor of the present invention is effective mainly in improving moisture resistance, continuous repeated use characteristics, electrical pressure resistance, use environment characteristics, and durability.

  In the electrophotographic photoreceptor of the present invention, each of the amorphous materials forming the photoconductive layers 803 and 804 and the surface layer 805 constituting the photoconductive layer has a common component called silicon atoms. Therefore, chemical stability is sufficiently ensured at each layer interface. When an a-Si-based material is used as the material of the surface layer 805, a compound with a silicon atom containing at least one atom selected from a carbon (C) atom, a nitrogen (N) atom, and an oxygen (O) atom is used. Particularly preferred are those containing a-SiC as a main component.

  When the surface layer 805 includes one or more of carbon (C) atoms, nitrogen (N) atoms, and oxygen (O) atoms, the content of these atoms is based on the total atoms constituting the network. A range of 30 atomic% to 95 atomic% is preferred.

  In general, it is preferable that hydrogen (H) atoms or halogen (X) atoms are contained in the surface layer 805, but this compensates for dangling bonds of silicon atoms, and improves layer quality, particularly photoconductive properties. This is because the charge retention characteristics are improved. The hydrogen (H) atom content is usually 30 to 70 atom%, preferably 35 to 65 atom%, and most preferably 40 to 60 atom% with respect to the total amount of constituent atoms. Moreover, as content of a halogen (X) atom, it is 0.01-15 atomic% normally, Preferably it is 0.1-10 atomic%, More preferably, it is 0.5-5 atomic%.

  The surface layer 805 formed within the range of the content of these hydrogen (H) atoms or halogen (X) atoms can be sufficiently applied as being excellent in practical aspects. That is, it is known that defects existing in the surface layer 805 (mainly dangling bonds of silicon atoms and carbon atoms) adversely affect the characteristics of the electrophotographic photosensitive member. For example, deterioration of charging characteristics due to charge injection from the free surface, fluctuations in charging characteristics due to changes in the surface structure under the usage environment, for example, high humidity, and surface layers from the photoconductive layer during corona charging or light irradiation Such adverse effects include the occurrence of an afterimage phenomenon during repeated use due to charges being injected into the surface layer and trapped in defects in the surface layer.

  However, by controlling the hydrogen (H) atom content in the surface layer 805 to 30 atomic% or more, defects in the surface layer 805 are greatly reduced. Improvement in continuous usability can be achieved.

  In addition, when the content of hydrogen (H) atoms in the surface layer 805 is set to 70 atomic% or less, the hardness of the surface layer 805 is high and can be used repeatedly. Therefore, controlling the hydrogen (H) atom content within the above range is one of the important factors for obtaining excellent desired electrophotographic characteristics. The hydrogen (H) atom content in the surface layer 805 can be controlled by the flow rate (ratio) of the source gas, the temperature of the cylindrical conductive substrate, the discharge power, the gas pressure, and the like.

  In addition, when the halogen (X) atom content in the surface layer 805 is controlled to be in the range of 0.01 atomic% or more, generation of bonds between silicon atoms and carbon atoms in the surface layer 805 is more effectively achieved. Is possible. Furthermore, as a function of the halogen (X) atom, it is possible to effectively prevent the bond between the silicon atom and the carbon atom from being broken due to damage such as corona charging.

  Further, when the halogen (X) atom content in the surface layer 805 is set to 15 atom% or less, the silicon atom and the carbon atom due to the effect of the bond between the silicon atom and the carbon atom in the surface layer 805 and the damage of corona or the like. In addition, it is possible to effectively achieve the occurrence of a bond with the substrate, and an excess of halogen (X) atoms does not hinder the running of carriers in the surface layer, and residual potential and image memory can be recognized. Absent. Therefore, controlling the halogen (X) atom content within the above range is one of the important factors for obtaining desired electrophotographic characteristics. Similarly to the hydrogen (H) atom content, the halogen (X) atom content in the surface layer 805 is controlled by the flow rate (ratio) of the source gas, the temperature of the cylindrical conductive substrate, the discharge power, the gas pressure, and the like. obtain.

  Furthermore, the surface layer 805 may contain a Group 13 atom or a Group 15 atom as necessary. These atoms may be contained in the surface layer in a uniformly distributed state, or there may be a portion containing in an uneven distribution state in the layer thickness direction.

  Further, as the source material for introducing these atoms, the same source material as in the case of the lower or upper charge injection blocking layer can be used.

  The layer thickness of the surface layer 805 is usually from 0.01 to 3 μm, preferably from 0.05 to 2 μm, more preferably from 0.1 to 1 μm. When the layer thickness is 0.01 μm or more, the electrophotographic photosensitive member of the present invention is not lost due to wear or the like. In addition, when the layer thickness is 3 μm or less, it is possible to prevent deterioration of electrophotographic characteristics such as increase in residual potential.

  In order to form the surface layer 805, it is necessary to appropriately set the temperature of the cylindrical conductive substrate and the gas pressure in the reaction vessel as desired. The optimum range of the temperature of the cylindrical conductive substrate is appropriately selected according to the layer design, but is usually 150 to 350 ° C., preferably 180 to 330 ° C., more preferably 200 to 300 ° C.

Similarly, the optimum range of the gas pressure in the reaction vessel is appropriately selected according to the layer design, but in the normal case, 1 × 10 ⁻² to 1 × 10 ³ Pa, preferably 5 × 10 ^{−2 to} 5 × 10 ² Pa. More preferably, it is 1 × 10 ⁻¹ to 1 × 10 ² Pa.

  In the present invention, the above-mentioned ranges are mentioned as desirable numerical ranges of the temperature and gas pressure of the cylindrical conductive substrate for forming the surface layer 805, but these conditions are usually not independently determined separately. In order to form an electrophotographic photosensitive member having desired characteristics, it is desirable to determine an optimum value based on mutual and organic relationships.

"Electrophotographic photoconductor manufacturing equipment"
FIG. 6 is a diagram schematically showing an example of an electrophotographic photosensitive member manufacturing apparatus using an RF plasma CVD method using a high frequency power source in the RF band. FIG. 7 is a diagram schematically showing an example of an electrophotographic photosensitive member manufacturing apparatus using a VHF plasma CVD method using a VHF band high-frequency power source.

  These devices are roughly classified into a film forming device 5100 (6100), a source gas supply device 5200 (6200), and an exhaust device (not shown) for reducing the pressure inside the reaction vessel 5110 (6110).

  The apparatus for manufacturing an electrophotographic photosensitive member by the RF plasma CVD method using the RF band high-frequency power source shown in FIG. The high frequency power applied to the film forming apparatus 5100 supplies high frequency power having a frequency of 1 MHz to 50 MHz, for example, 13.56 MHz to the cathode electrode 5111 through the high frequency matching box 5115 to cause high frequency glow discharge. Each material gas introduced into the reaction vessel 5110 is decomposed by this discharge energy, and each layer constituting the a-Si type photosensitive layer containing a desired silicon atom as a main component is formed on the substrate 5112. The gas pressure in the reaction vessel 5110 is normally maintained at about 13.3 Pa to 1330 Pa. The base 5112 is connected to the ground by being installed on the cradle 5123.

  The electrophotographic photosensitive member of the present invention can be manufactured by the electrophotographic photosensitive member manufacturing apparatus by the VHF plasma CVD method shown in FIG. When an a-Si photosensitive layer is formed using the VHF plasma CVD manufacturing apparatus shown in FIG. 7, the applied high frequency power is supplied from a VHF power source having a frequency of 50 MHz to 450 MHz, for example, 105 MHz. Thus, the gas pressure in the reaction vessel 6110 is normally maintained at about 13.3 mPa to 1330 Pa. The base 6112 is connected to the ground by being installed on the cradle 6123.

  A substrate 6112 connected to the ground, a substrate heating heater 6113, and a source gas introduction pipe 6114 are installed in a reaction vessel 6110 of the film forming apparatus 6100, and a high frequency power source 6120 is connected to the cathode electrode 6111 via a high frequency matching box 6115. It is connected.

  Further, the source gas supply device 6200 having the same configuration as the source gas supply device 5200 of the electrophotographic photosensitive member manufacturing apparatus by the RF plasma CVD method using the RF band high frequency power source shown in FIG. 6 is used. can do. The electrophotographic photosensitive member manufacturing apparatus using the VHF plasma CVD method shown in FIG. 7 is the same as the raw material gas supply apparatus of the RF plasma CVD manufacturing apparatus using the RF band high frequency power source shown in FIG. The case where it is used will be described. Note that the electrophotographic photosensitive member manufacturing apparatus using the VHF plasma CVD method shown in FIG. 7 is illustrated by omitting the mass flow controller, source gas cylinder, gas cylinder valve, inflow valve, outflow valve, pressure regulator, source gas supply apparatus, and the like. However, 6211-6216 for the mass flow controller, 6221-6226 for the source gas cylinder, 6231-6236 for the gas cylinder valve, 6241-6246 for the inflow valve, and 6251-6256 for the outflow valve. The source gas supply device 5200 (6200) of the photographic photoreceptor manufacturing apparatus will be described together.

The source gas supply device 5200 (6200) includes source gas cylinders 5221 to 5226 (6221 to 6226) and gas cylinder valves 5231 to 5236 (6221 to 6236) such as SiH ₄ , H ₂ , CH ₄ , NO, B ₂ H ₆ , and CF _4. ), Inflow valves 5241 to 5246 (6241 to 6246), outflow valves 5251 to 5256 (6251 to 6256), and mass flow controllers 5211 to 5216 (6211 to 6216). To the source gas introduction pipe 5114 (6114) in the reaction vessel 5110 (6110).

  Next, an example of the procedure of the method for producing an electrophotographic photoreceptor of the present invention using the electrophotographic photoreceptor production apparatus shown in FIG. 7 will be described.

  A substrate 6112 is installed in the reaction vessel 6110, and the inside of the reaction vessel 6110 is evacuated by an unillustrated exhaust device (for example, a vacuum pump). Subsequently, the temperature of the substrate 6112 is controlled to 200 to 450 ° C., preferably 250 to 350 ° C. by the substrate heating heater 6113. Next, it is confirmed that the gas cylinder valve 6231 to 6236 and the leak valve (not shown) of the manufacturing apparatus are closed in order to cause the source gas for forming the a-Si-based photosensitive layer to flow into the reaction vessel 6110. After confirming that the inflow valves 6241 to 6246, the outflow valves 6251 to 6256, and the auxiliary valve 6260 are opened, the main exhaust valve 6118 is opened to exhaust the reaction vessel 6110 and the gas introduction pipe 6116.

  Thereafter, when the reading of the vacuum gauge 6119 reaches 0.5 mPa, the auxiliary valve 6260 and the outflow valves 6251 to 6256 are closed. Thereafter, each gas is introduced from the source gas cylinders 6221 to 6226 by opening the gas cylinder valves 6231 to 6236, and each source gas pressure is adjusted to 0.2 MPa by the pressure regulators 6261 to 6266. Next, the inflow valves 6241 to 6246 are gradually opened to introduce each source gas into the mass flow controllers 6211 to 6216.

  After completing the preparation for forming the a-Si photosensitive layer by the above procedure, a predetermined layer constituting the photosensitive layer is formed on the substrate 6112. That is, when the substrate 6112 reaches a desired temperature, necessary ones of the outflow valves 6251 to 6256 and the auxiliary valve 6260 are gradually opened, and the predetermined amount is selected from the source gas cylinders 6221 to 6226 necessary for film formation of each layer. The raw material gas is introduced into the reaction vessel 6110 through the raw material gas introduction pipe 6114. Next, each mass flow controller 6211 to 6216 is adjusted so that a predetermined source gas has a desired flow rate. At this time, the opening of the main exhaust valve 6118 is adjusted while looking at the vacuum gauge 6119 so that the inside of the reaction vessel 6110 has a desired pressure of 13.3 mPa to 1330 Pa. When the internal pressure is stabilized, the high frequency power source 6120 is set to a desired power, and a high frequency power is supplied to the cathode electrode 6111 through the high frequency matching box 6115 using a VHF power source having a frequency of 50 MHz to 450 MHz, for example, 105 MHz, thereby generating a high frequency glow discharge. . Each material gas introduced into the reaction vessel 6110 is decomposed by this discharge energy, and desired layers of the photosensitive layer mainly composed of silicon atoms are formed on the substrate 6112.

  In the film forming apparatus 6100, in the discharge space 6130 surrounded by the base 6112, the introduced source gas is excited and dissociated by the discharge energy, and a desired layer of the a-Si photosensitive layer is formed on the base 6112. The At this time, the substrate is rotated at a desired rotation speed by the substrate rotation motor 6124 in order to make the formed layer uniform.

  After film formation of each desired layer of the a-Si-based photosensitive layer having a predetermined layer thickness is performed, the supply of high-frequency power is stopped, and each outflow valve 6251 to 6256 is closed to The inflow of the source gas is stopped and the formation of the a-Si photosensitive layer is completed. The composition and layer thickness of each layer constituting the a-Si-based photosensitive layer can be selected and set from known materials according to the purpose of use.

  Note that the a-Si photosensitive layer may also be formed according to the above method using the electrophotographic photoreceptor manufacturing apparatus by the RF plasma CVD method shown in FIG.

Hereinafter, the electrophotographic photosensitive member of the present invention will be described based on examples.
[Example 1]
FIG. 1 (a) (and FIG. 10-1 (a)) is an end cross-sectional view of a cylindrical conductive substrate used in this embodiment, and FIG. 1 (b) is an end view of the electrophotographic photosensitive member of this embodiment. A partial sectional view is shown. A cylindrical conductive substrate having an outer diameter of 84 mm, a wall thickness of 2.90 mm, and an inlay portion length (a + b + c) of 13 mm was used. The cylindrical conductive substrate 104 has an inlay portion 101 for attaching a flange (not shown) to the cylindrical conductive substrate 104, and the inner portion 102 of the inlay portion is formed from the central portion of the cylindrical conductive substrate 104. The inner surface of the cylindrical conductive substrate 104 is cut and formed so as to have a large inner diameter. In the electrophotographic photosensitive member of this embodiment, as shown in FIG. 1B, the a-Si photosensitive layer 103 is formed on the outer peripheral surface of the cylindrical conductive substrate 104.
As shown in FIG. 1 (a), the outer peripheral surface of the end portion of the cylindrical conductive substrate 104 is flat so that it is the same cylindrical surface as the outer peripheral surface of the central portion, and the inner portion 102 of the spigot portion is cylindrical. A portion (A) whose inner diameter is constant toward the end of the conductive substrate 104 and is larger than the central portion of the cylindrical substrate, and a direction in which the inner diameter increases toward the end, The portion (B) and the portion (C) in which the rate of change of the inner diameter is reduced are arranged in this order.

The cylindrical conductive substrate 104 used in this example is aluminum 95% or more, silicon 0.1% or less, iron 0.1% or less, Cu 0.1% or less, Mn 0.1% or less, Cr 0.1% or less. , An aluminum alloy containing 0.1% or less of Ti and about 2.6% of Mg and having an outer diameter of 84 mm, a length of 381 mm, and a wall thickness (e) of 2.90 mm is machined with a lathe to form an inlay portion It was prepared by mirror finishing with a lathe.
About the produced cylindrical conductive substrate, its dimensions, the position of the end surface of the spigot part (E / C position), the position of the boundary line between the part (C) and the part (B) (C / B position), the part (B) and the part The position of the boundary line with (A) (B / A position) and the position (A / M position) of the base part side (A / M position) of the part (A) from the inner diameter of the spigot part and the end face of the spigot part to the respective positions The length was measured. Further, the thickness of the central portion of the cylindrical conductive substrate was measured. The obtained results are shown in Table 1.

  An electrophotographic photoreceptor was produced under the production conditions shown in Table 4 using the apparatus for producing an electrophotographic photoreceptor by the RF plasma CVD method shown in FIG. The obtained electrophotographic photosensitive member was measured for the inner diameter at each position of the cylindrical conductive substrate and the length from the end surface of the inlay portion to each position, and the rate of change in the inner diameter of the portion (B) and the portion (C) was determined. Asked. The obtained results are shown in Table 2. Further, the concentricity and the average roundness were measured, the electrophotographic photosensitive member of this example was mounted on an electrophotographic apparatus, an image was created, and the density unevenness of the image was evaluated. The obtained results are shown in Table 3.

[Measuring method]
(1) Concentricity, average circularity, squareness, parallelism of the electrophotographic photosensitive member The concentricity of the electrophotographic photosensitive member produced was determined by the minimum circumcircle method described in JIS-B7451: 1997. Was measured by MITSUTOYO, ROUNDTEST = RA-400 (manufactured by Mitutoyo Corporation; trade name) by the least square method described in JIS-B7451: 1997.
In addition, squareness and parallelism were measured using MITSUTOYO, ROUNDTEST = RA-400 (manufactured by Mitutoyo Corporation; trade name).
The perpendicularity is the distance between the two planes when the evaluation plane (step surface at the A / M position) is sandwiched between two planes perpendicular to the reference axis (the central axis of the cylindrical conductive substrate of the electrophotographic photosensitive member). It was measured and evaluated as a squareness (axis reference).
The degree of parallelism is the distance when the evaluation surface (step surface at the A / M position on the side different from the reference surface) is sandwiched between two planes parallel to the reference surface (step surface at one A / M position). Was measured and evaluated as parallelism.

(2) The shape of the inlay part and the thickness of the center part The shape of the inlay part is the above-mentioned MITSUTOYO, ROUNDTEST = RA-400, surface roughness meter (Surfcoder SE-30D (manufactured by Kosaka Laboratory; trade name) and MITSUTOYO Surf) Measurement was performed using a test SJ-400 (manufactured by Mitutoyo Corporation; trade name). Further, the length from the end surface of the inlay portion to each position was measured by the above method.

(3) Dimension of cylindrical conductive substrate It was measured using a three-dimensional measuring instrument (Tokyo Seimitsu Co., Ltd., XYZAX, PA800A; trade name). The dimensions of the inlay portion were measured using a three-point micrometer (manufactured by Mitutoyo Corporation, Hall Test HT2-88; trade name) in addition to the three-dimensional measuring device.

[Method for evaluating electrophotographic photosensitive member]
(1) Fla The electrophotographic photoconductor is shown in FIG. 11 by using a flange (FIG. 15A) of Ad−Fd = 0.020 mm (manufacturing accuracy ± 0.005 mm). It was mounted on a flare measuring instrument and measured. A flange 1003 (with a tolerance of about h7) close to the dimensions of the inlay portion measured by the above-described three-dimensional measuring device was mounted on the electrophotographic photosensitive member 1001. Next, the electrophotographic photosensitive member 1001 fitted with the flange 1003 is placed on a rotating gear 1004 (motor not shown) and a rotating shaft 1005, and the rotating gear 1004 is rotated to rotate the rotating shaft 1005 and the electrophotographic photosensitive member 1001. Let When the rotary shaft 1005 is rotated, the rotary shaft rotates about the center axis of the flange, and the dial gauge 1002 (may be a proximity sensor or the like) at both ends of the electrophotographic photosensitive member 1001 The deflection of the electrophotographic photosensitive member with respect to the central axis is measured. The measurement was performed five times while the flange was detached and attached each time, and the maximum value was taken as the measured electrophotographic photosensitive member flare.

(2) Density unevenness of image An electrophotographic photosensitive member is mounted on an electrophotographic apparatus (an IR6000 manufactured by Canon Inc. modified for testing) using the same flange as that used in the above-described flare evaluation, and A3 paper ( A solid black image is output to Canon 5547A013, etc., and the transmission density of the obtained image is extracted at 100 locations randomly extracted from the entire image using a densitometer (D-200-II manufactured by GretagMacbeth; trade name). Was measured. The difference (DF) between the maximum value and the minimum value of the transmission density of the image was obtained, and density unevenness was evaluated according to the following criteria.
1: 0.2 ≦ DF <0.3, no problem in practical use, but some density unevenness can be visually observed 2: 0.1 ≦ DF <0.2, no problem in practical use 3: 0.05 ≦ DF <0 .1 Good 4: 0 ≤ DF <0.05 Very good (3) Flange fitability A flange with Ad-Fd = 0.020 mm is attached in the flare measurement, but can a flange smaller than the tolerance be attached? As an index, the overall roundness and perpendicularity were judged and ranked in four levels.
1: Conventional level: Ad-Fd = 0.050 mm flange cannot be mounted 2: Fit slightly improved: Ad-Fd = 0.020 and flange of 0.050 mm or less can be mounted 3: Fit is improved: Ad -Fd = 0.020mm or less flange mounting ready 4: Adhesion good: Ad-Fd = 0.015mm or less flange mounting ready (4) Assembling accuracy in the main body The rotating shaft of the electrophotographic main body needs to pass through the rotating shaft hole in the center of the flange. As an index of the straightness of the rotating shaft and the tolerance with the rotating shaft hole, it was comprehensively judged from concentricity and parallelism, and was ranked into four stages.
1: Conventional level 2: Slightly improved 3: Good 4: Very good (5) Inlay portion strength If the thickness of the open end side of the inlay portion becomes too thin, the photoconductor is transported or incorporated into the electrophotographic main body. In addition, there is a possibility that distortion or the like may occur due to insufficient mechanical strength of the inlay portion. As a guide, the end thickness was 2 mm or more, and was ranked in two stages.
1: Less than 2 mm 2: 2 mm or more (6) Comprehensive evaluation The comprehensive evaluation is a value obtained by adding the respective rank points of flange fitting property, accuracy of incorporation into the main body, inlay portion strength, and density unevenness. A larger value is a better electrophotographic photoreceptor.

[Comparative Example 1]
FIG. 2C shows an end cross-sectional view of the cylindrical conductive substrate used in this comparative example.
A cylindrical conductive substrate was prepared in the same manner as in Example 1 except that the inner part of the inlay portion had the shape shown in FIG. 2C, and an electrophotographic photosensitive member was prepared in the same manner as in Example 1. . As for the cylindrical conductive substrate used in this comparative example, as shown in FIG. 2 (c), a portion corresponding to the portion (A) of the cylindrical conductive substrate used in Example 1 (part (A And a portion (may be represented as a portion (B ′)) that changes in the direction in which the inner diameter increases toward the outermost portion. Accordingly, for the cylindrical conductive substrate of this comparative example, the position of the end surface of the spigot part (may be referred to as E / B ′ position), the position of the boundary line between the part (B ′) and the part (A ′) (B ′ / A ′ position), and the position of the portion (A ′) from the inner diameter of the spigot portion and the position of the end portion of the spigot portion at each position of the base portion side of the base (may be expressed as A ′ / M position) The length up to was measured in the same manner as in Example 1.

FIG. 2D shows an end cross-sectional view of the cylindrical conductive substrate of the electrophotographic photosensitive member of this comparative example. As shown in FIG. 2 (d), a portion having a smaller inner diameter than the portion (A ′) serving as the flange joint surface was formed in the inner portion of the spigot portion (see the detailed view of FIG. 2 (d)). Ad-Fd = 0.075 mm (production accuracy ± 0.005 mm) which cannot be attached to an electrophotographic apparatus or a frame measuring device using the above-mentioned Ad-Fd = 0.020 mm flange and has a little play on the joint surface. It was attached to an electrophotographic apparatus and a shake measuring device using a flange having The shape of the flange is the same as that shown in FIG.
The cylindrical conductive substrate used and the obtained electrophotographic photosensitive member were measured and evaluated in the same manner as in Example 1. The obtained results are shown in Tables 1, 2 and 3.

  As shown in Table 3, the electrophotographic photosensitive member of Comparative Example 1 had to be mounted using a flange having a slightly large play, so that the flare was smaller than that of the electrophotographic photosensitive member of Example 1. It was a big value. On the other hand, in the electrophotographic photosensitive member of Example 1, as shown in FIG. 1B, the outer diameter was reduced as a result of the end portion of the cylindrical conductive substrate 104 being contracted. In the inner portion, the portion (A) which is the flange joint surface portion is a flat cylindrical surface without stress deformation. For this reason, the concentricity and the average roundness are reduced on the flange joint surface, and good inner diameter dimensional accuracy can be secured. Even at the extreme end subjected to stress deformation, the inner diameter thereof is larger than the flange joint surface, so that it was possible to solve the problems of the prior art such as the fact that the flange cannot be mounted. As a result, the fitting accuracy of the flange and the positional accuracy of the electrophotographic photosensitive member in the electrophotographic apparatus are improved, the flare is small, the gap accuracy between the surface of the electrophotographic photosensitive member and the developing device, the rotational accuracy of the electrophotographic photosensitive member, etc. As a result, an electrophotographic photosensitive member capable of obtaining an electrophotographic image having excellent image quality with extremely little image density unevenness was obtained.

[Example 2]
An end cross-sectional view of the cylindrical conductive substrate used in this example is shown in FIG.
The horizontal axis in FIGS. 10-1 (a) to 10-8 (o) indicates the length of the cylindrical conductive substrate in the longitudinal direction, the left side of the figure is the endmost side, and the right side is the center. It is the club side. The vertical axis shows the case where the respective lengths in the diameter direction are divided by arbitrary equal lengths, the lower side of the figure shows the inner surface side of the cylindrical conductive substrate, and the upper side shows the outermost surface side. This is the same as FIG.
A cylindrical conductive substrate was prepared in the same manner as in Example 1 except that the shape of the inner part of the spigot part was as shown in FIG. 10-1 (b) and the wall thickness was 2.80 mm. An electrophotographic photosensitive member was produced in the same manner as in Example 1 except that the production conditions were as shown in Table 5. The cylindrical conductive substrate used and the obtained electrophotographic photosensitive member were measured and evaluated in the same manner as in Example 1. The obtained results are shown in Tables 1, 2 and 3.

[Example 3]
FIG. 10-2 (c) shows an end cross-sectional view of the cylindrical conductive substrate used in this example.
A cylindrical conductive substrate was prepared in the same manner as in Example 1 except that the shape of the inner portion of the inlay portion was changed to the shape shown in FIG. 10-2 (c), and electrophotographic photosensitivity by the VHF plasma CVD method shown in FIG. An electrophotographic photosensitive member was produced in the same manner as in Example 1 except that the production conditions of the a-Si photosensitive layer were as shown in Table 6 using the production apparatus for the photosensitive member. The cylindrical conductive substrate used and the obtained electrophotographic photosensitive member were measured and evaluated in the same manner as in Example 1. The obtained results are shown in Tables 1, 2 and 3.

[Example 4]
FIG. 10-2 (d) shows an end cross-sectional view of the cylindrical conductive substrate used in this example.
Aluminum 95% or more, silicon 0.1% or less, iron 0.2% or less, Cu 0.15% or less, Mn 0.08% or less, Cr 0.08% or less, Ti 0.08% or less, Zn 0.05% or less, Mg 2 10-2 (d), the shape of the inner part of the spigot part is shown in FIG. A cylindrical conductive substrate was prepared in the same manner as in Example 1 except that the shape shown in Fig. 7 was used. Using this, a negative-charge a-Si photosensitive layer was formed using the photosensitive layer preparation conditions shown in Table 7. An electrophotographic photosensitive member was produced in the same manner as in Example 1 except that the film was formed. The cylindrical conductive substrate used and the obtained electrophotographic photosensitive member were measured and evaluated in the same manner as in Example 1. The obtained results are shown in Tables 1, 2 and 3.

[Example 5]
FIG. 10-3 (e) shows an end cross-sectional view of the cylindrical conductive substrate used in this example.
The shape of the inside part of the spigot part is the same as that shown in FIG. 10-3 (e), the length (a + b + c) of the spigot part is 18 mm, and the thickness is 2.95 mm. A cylindrical conductive substrate was prepared, and an electrophotographic photosensitive member was prepared in the same manner as in Example 4. The cylindrical conductive substrate used and the obtained electrophotographic photosensitive member were measured and evaluated in the same manner as in Example 4. The obtained results are shown in Tables 1, 2 and 3.

[Example 6]
FIG. 10-3 (f) shows an end cross-sectional view of the cylindrical conductive substrate used in this example.
A cylindrical conductive substrate was prepared in the same manner as in Example 1 except that the shape of the inner portion of the spigot part was changed to the shape shown in FIG. 10-3 (f). Table 8 shows the preparation conditions for the a-Si photosensitive layer. An electrophotographic photosensitive member was produced in the same manner as in Example 1 except that it was shown. The cylindrical conductive substrate used and the obtained electrophotographic photosensitive member were measured and evaluated in the same manner as in Example 1. The obtained results are shown in Tables 1, 2 and 3.

[Example 7]
FIG. 10-4 (g) shows an end cross-sectional view of the cylindrical conductive substrate used in this example.
A cylindrical conductive substrate was prepared in the same manner as in Example 1 except that the shape of the inner part of the inlay part was as shown in FIG. 10-4 (g) and the thickness was 2.85 mm. An electrophotographic photosensitive member was produced in the same manner as in Example 1 except that the conditions for creating the layers were as shown in Table 8. The cylindrical conductive substrate used and the obtained electrophotographic photosensitive member were measured and evaluated in the same manner as in Example 1. The obtained results are shown in Tables 1, 2 and 3.

[Example 8]
FIG. 10-4 (h) shows an end cross-sectional view of the cylindrical conductive substrate used in this example.
A cylindrical conductive substrate was prepared in the same manner as in Example 1 except that the shape of the inner portion of the spigot part was as shown in FIG. 10-4 (h) and the thickness was 2.98 mm. An electrophotographic photosensitive member was produced in the same manner as in Example 1 except that the conditions for creating the layers were as shown in Table 8. The cylindrical conductive substrate used and the obtained electrophotographic photosensitive member were measured and evaluated in the same manner as in Example 1. The obtained results are shown in Tables 1, 2 and 3.

[Example 9]
FIG. 10-5 (i) shows an end cross-sectional view of the cylindrical conductive substrate used in this example.
A cylindrical conductive substrate is formed in the same manner as in Example 1 except that the shape of the inner part of the spigot part is the shape shown in FIG. 10-5 (i) and the length (a + b + c) of the spigot part is 15 mm. An electrophotographic photosensitive member was produced in the same manner as in Example 1 except that the production conditions of the a-Si photosensitive layer were as shown in Table 8. The cylindrical conductive substrate used and the obtained electrophotographic photosensitive member were measured and evaluated in the same manner as in Example 1. The obtained results are shown in Tables 1, 2 and 3.

[Example 10]
FIG. 10-5 (j) shows an end cross-sectional view of the cylindrical conductive substrate used in this example.
A cylindrical conductive substrate was formed in the same manner as in Example 1 except that the shape of the inner part of the spigot part was the shape shown in FIG. 10-5 (j) and the length (a + b + c) of the spigot part was 15 mm. An electrophotographic photosensitive member was produced in the same manner as in Example 1 except that the production conditions of the a-Si photosensitive layer were as shown in Table 8. The cylindrical conductive substrate used and the obtained electrophotographic photosensitive member were measured and evaluated in the same manner as in Example 1. The obtained results are shown in Tables 1, 2 and 3.

  From the results shown in Table 2 and Table 3, a / (b + c) is 0.65 or less, the inner diameter change rate of the portion B is 20 μm / mm or more and 200 μm / mm or less, and the change rate of the inner diameter of the portion C is −4 μm / mm. By setting the ratio (b / c) to 0.20 or more and 0.40 or less and the ratio (d / e) to 0.60 or more and 0.80 or less, the density unevenness and the flange fitting portion It can be seen that good results are obtained in dimensional accuracy.

[Example 11]
Using the electrophotographic photosensitive member prepared in Example 1, several kinds of flanges having Ad-Fd of 0.020 to 0.050 mm and only Fd different from the flange used in Example 1 were fitted. An electrophotographic photoreceptor unit was produced. The produced electrophotographic photoreceptor unit was measured and evaluated for flare and density unevenness in the same manner as in Example 1. The obtained results are shown in Table 9.

[Comparative Example 2]
Using the electrophotographic photosensitive member prepared in Example 1, two types of flanges having Ad-Fd of 0.060 and 0.075 mm and different from the flange used in Example 1 were fitted, and electrophotography was performed. A photoreceptor unit was prepared. The produced electrophotographic photoreceptor unit was measured and evaluated for flare and density unevenness in the same manner as in Example 1. The obtained results are shown in Table 9.

From the results shown in Table 9, when the flange to be fitted is represented by Ad as the inner diameter of the portion A of the electrophotographic photosensitive member, the outer diameter Fd of the fitting portion of the flange is expressed by the following formula (1).
0.000 mm ≦ Ad−Fd ≦ 0.050 mm (1)
By satisfying the above relationship, it can be seen that good results can be obtained in terms of the flare and density unevenness of the electrophotographic photosensitive member unit.

[Example 12]
FIG. 10-6 (k) shows an end cross-sectional view of the cylindrical conductive substrate used in this example.
Using an aluminum alloy having the same composition as the aluminum alloy described in Example 4 and having an outer diameter of 108 mm, a length of 358 mm, and a thickness (e) of 2.95 mm, the shape of the inner portion of the spigot part is shown in FIG. A cylindrical conductive substrate was prepared in the same manner as in Example 1 except that the shape shown in k) was used and the length (a + b + c) of the inlay portion was 23 mm. Further, an electrophotographic photosensitive member was produced in the same manner as in Example 1 except that the conditions for creating the a-Si photosensitive layer were as shown in Table 13. The cylindrical conductive substrate used and the obtained electrophotographic photosensitive member were measured and evaluated in the same manner as in Example 1. The obtained results are shown in Table 10, Table 11, and Table 12.
However, since the electrophotographic photosensitive member of this example cannot be mounted on the electrophotographic apparatus used for the evaluation of the electrophotographic photosensitive member of Example 1, the above-mentioned frame is added to the electrophotographic apparatus modified for testing by Canon Inc. iR8500. The electrophotographic photosensitive member of this example was mounted using a flange having the same shape as that used in the evaluation, an image was formed, and image unevenness was evaluated.

[Example 13]
FIG. 10-6 (l) shows an end cross-sectional view of the cylindrical conductive substrate used in this example.
The shape of the inside part of the spigot part is the same as that shown in FIG. 10-6 (l), the thickness is 4.98 mm, and the length (a + b + c) of the spigot part is 18 mm. A cylindrical conductive substrate was prepared, and an electrophotographic photosensitive member was prepared in the same manner as in Example 12 except that the preparation conditions for the a-Si photosensitive layer were as shown in Table 14. The cylindrical conductive substrate used and the obtained electrophotographic photosensitive member were measured and evaluated in the same manner as in Example 12. The obtained results are shown in Tables 10 to 12.

[Example 14]
FIG. 10-7 (m) shows an end cross-sectional view of the cylindrical conductive substrate used in this example.
The shape of the inner part of the spigot part is shown in FIG. 10-7 (m), the length of the raw tube is 420 mm, the wall thickness is 5.00 mm, and the length of the spigot part (a + b + c) is 13 mm. The electrophotographic photosensitive member was prepared in the same manner as in Example 12 except that a cylindrical conductive substrate was prepared in the same manner as in Example 12 and the production conditions for the a-Si photosensitive layer were as shown in Table 15. Produced. The cylindrical conductive substrate used and the obtained electrophotographic photosensitive member were measured and evaluated in the same manner as in Example 12. The obtained results are shown in Tables 10 to 12.

[Example 15]
An end cross-sectional view of the cylindrical conductive substrate used in this example is shown in FIG.
The shape of the inner part of the spigot part is the shape shown in FIG. 10-7 (n), the length of the raw tube is 455 mm, the wall thickness is 4.90 mm, and the length of the spigot part (a + b + c) is 13 mm. A cylindrical conductive substrate was produced in the same manner as in Example 12 except that, and an electrophotographic photosensitive member was produced in the same manner as in Example 12. The cylindrical conductive substrate used and the obtained electrophotographic photosensitive member were measured and evaluated in the same manner as in Example 12. The obtained results are shown in Tables 10 to 12.

[Example 16]
An end cross-sectional view of the cylindrical conductive substrate used in this example is shown in FIG. 10-8 (o).
The shape of the inner part of the spigot part is the shape shown in FIG. 10-8 (o), the length of the raw tube is 455 mm, the wall thickness is 5.00 mm, and the length of the spigot part (a + b + c) is 13 mm. A cylindrical conductive substrate was produced in the same manner as in Example 12 except that the cylindrical conductive substrate was produced in the same manner as in Example 12. The cylindrical conductive substrate used and the obtained electrophotographic photosensitive member were measured and evaluated in the same manner as in Example 12. The obtained results are shown in Tables 10 to 12.

According to the present invention, since the fitting accuracy of the flange and the positional accuracy of the electrophotographic photosensitive member in the electrophotographic apparatus are improved, the gap accuracy between the surface of the electrophotographic photosensitive member and the developing device, the rotational accuracy of the electrophotographic photosensitive member, etc. Can be provided, and a method for producing an electrophotographic photosensitive member capable of obtaining an electrophotographic image having excellent image quality with extremely little image density unevenness can be provided.

FIG. 3 is a schematic cross-sectional view showing an example of an inlay portion of a cylindrical conductive substrate and an example of an inlay portion of an electrophotographic photosensitive member. (A) is an example of an inlay portion of a cylindrical conductive substrate used in the present invention, and (b) is an example of an inlay portion of the electrophotographic photosensitive member of the present invention. FIG. 3 is a schematic cross-sectional view showing an example of an inlay portion of a cylindrical conductive substrate and an example of an inlay portion of an electrophotographic photosensitive member. (C) shows an example of an inlay portion of a cylindrical conductive substrate used for manufacturing a conventional electrophotographic photosensitive member, and (d) shows an example of an inlay portion of a cylindrical conductive substrate of a conventional electrophotographic photosensitive member. It is typical sectional drawing. It is typical sectional drawing which shows an example of the raw tube used for manufacture of a cylindrical conductive base | substrate, and an inlay processed base | substrate. (A) is an example of a raw tube used for manufacturing a cylindrical conductive substrate, and (b) is an example of an inlay processed substrate used for manufacturing a cylindrical conductive substrate. It is typical explanatory drawing of an example of the conventional electrophotographic photoreceptor, and an example of a layer structure of an electrophotographic photoreceptor. (A) is an example of a conventional electrophotographic photosensitive member, and (b) is an example of a layer structure of the conventional electrophotographic photosensitive member. FIG. 10 is a schematic explanatory view of an inlay portion of a conventional electrophotographic photosensitive member. It is a typical block diagram which shows an example of the manufacturing apparatus of the electrophotographic photoreceptor by RF plasma CVD method. It is a typical block diagram which shows an example of the manufacturing apparatus of the electrophotographic photosensitive member by VHF plasma CVD method. FIG. 6 is a schematic cross-sectional view for explaining a deformation of an inlay portion of a conventional electrophotographic photosensitive member. (A) is a schematic cross-sectional view of the substrate, and (b) is a schematic cross-sectional view of the electrophotographic photosensitive member. It is a schematic diagram which shows an example of the layer structure of an amorphous silicon type electrophotographic photosensitive member. FIG. 3 is a schematic cross-sectional view showing examples (a) and (b) of an inlay portion of a cylindrical conductive substrate used for producing the electrophotographic photosensitive member of the present invention. FIG. 3 is a schematic cross-sectional view showing examples (c) and (d) of an inlay portion of a cylindrical conductive substrate used for producing the electrophotographic photosensitive member of the present invention. FIG. 3 is a schematic cross-sectional view showing examples (e) and (f) of an inlay portion of a cylindrical conductive substrate used for producing the electrophotographic photosensitive member of the present invention. FIG. 3 is a schematic cross-sectional view showing examples (g) and (h) of an inlay portion of a cylindrical conductive substrate used for producing the electrophotographic photosensitive member of the present invention. FIG. 3 is a schematic cross-sectional view showing examples (i) and (j) of an inlay portion of a cylindrical conductive substrate used for producing the electrophotographic photosensitive member of the present invention. FIG. 3 is a schematic cross-sectional view showing examples (k) and (l) of an inlay portion of a cylindrical conductive substrate used for producing the electrophotographic photosensitive member of the present invention. FIG. 3 is a schematic cross-sectional view showing examples (m) and (n) of an inlay portion of a cylindrical conductive substrate used for producing the electrophotographic photosensitive member of the present invention. FIG. 3 is a schematic cross-sectional view showing an example (o) of an inlay portion of a cylindrical conductive substrate used for producing the electrophotographic photosensitive member of the present invention. It is a schematic diagram which shows an example of the shake measuring device of an electrophotographic photoreceptor. It is a schematic diagram for demonstrating the shape (dimension position) of the inlay part of a cylindrical conductive base | substrate, and the inlay part of an electrophotographic photoreceptor. It is a schematic diagram showing an electrophotographic photosensitive member unit of the present invention. It is a schematic diagram which shows the elevation view of an example of the fixing member (flange) which can be used for manufacture of the electrophotographic photosensitive member unit of the present invention. It is a schematic diagram which shows the cross-sectional shape (perpendicular to a central axis) of an example of the fixing member (flange) which can be used for manufacture of the electrophotographic photosensitive member unit of the present invention.

Explanation of symbols

101 Inlay portion 102 Inner portion inner portion 103 Amorphous silicon photosensitive layer (a-Si photosensitive layer)
DESCRIPTION OF SYMBOLS 104 Cylindrical electroconductive base | substrate 201 Element pipe | tube 202 Substrate-processed base 203 Inlay processed part 204 Outer peripheral part 205 Inner peripheral part 206 End part 300 Substrate 301 Amorphous silicon photoconductor (a-Si photoconductor)
302 Amorphous silicon photosensitive layer (a-Si photosensitive layer)
303 Charge injection blocking layer 304 Photoconductive layer 305 Surface layer 402 Edge region 403 Edge 404 Amorphous silicon photosensitive layer (a-Si photosensitive layer)
405 Substrate central part 406 Inlay part 5100, 6100 Deposition apparatus 5110, 6110 Reaction vessel 5111, 6111 Cathode electrode 5112, 6112 Substrate 5113, 6113 Substrate heating heater 5114, 6114 Source gas introduction pipes 5115, 6115 High-frequency matching boxes 5116, 6116 Gas introduction piping 5117, 6117 Leak valve 5118, 6118 Main exhaust valve 5119, 6119 Vacuum gauge 5120, 6120 High frequency power source 5121, 6121 Dielectric 5123, 6123 Base 6124 Motor for substrate rotation 6130 Discharge space 5200, 6200 Source gas supply device 5211 5216, 6211-6216 Mass flow controllers 5221-5226, 6221-6226 Raw material gas cylinders 5231-5236, 6 31-6236 Gas cylinder valve 5241-5246, 6241-6246 Inflow valve 5251-5256, 6251-6256 Outflow valve 5261-5266, 6261-6266 Pressure regulator 701 Base 702 Inlay part 800 Cylindrical conductive base 802 Lower charge injection blocking layer 803 photoconductive layer, first photoconductive layer 804 second photoconductive layer 805 surface layer 806 upper charge injection blocking layer 1001 electrophotographic photosensitive member 1002 dial gauge 1003 flange 1004 rotating gear 1005 rotating shaft 1201 electrophotographic photosensitive member 1202 (Fixing member) Flange 1203 (Fixing member) Fitting portion of flange

Claims (1)

A partial inner diameter having a larger inner diameter than the central portion be constant toward the top end (A), and part (B) is changing in the direction of enlarging the inner diameter toward the top end, the A portion (C) having a smaller rate of change in the inner diameter toward the endmost part than the part (B), and an inlay portion in this order toward the endmost part is provided in both end regions ; and The total length (b + c) of the longitudinal length (a) of the portion (A), the longitudinal length (b) of the portion (B) and the longitudinal length (c) of the portion (C), Ratio (a / [b + c]) is 4.0 / 19.0 to 6.0 / 9.0, and the longitudinal length (b) of the portion (B) and the length of the portion (C) The ratio (b / c) to the length (c) in the longitudinal direction is 1.4 / 7.8 to 3.0 / 7.0, and the thickness of the portion (A) is 1.75 to 3 .94 mm, and The outer peripheral surface and the central portion outer peripheral surface and the outer peripheral surface to be the same cylindrical surface has a flat shape, a cylindrical conductive substrate formed of aluminum or an aluminum alloy of the end portion
While heating the electronic characterized that you manufacture an electrophotographic photosensitive member of amorphous silicon photosensitive layer to extend in the end region on the outer peripheral surface of the cylindrical conductive substrate by depositing form A method for producing a photographic photoreceptor.

Images